Three-phase rectifier with low ripple and wide output voltage range

Abstract

The invention relates to the technical field of rectifiers, in particular to a three-phase voltage source rectifier. The rectifier based on the three-phase voltage source comprises an alternating-current voltage source module, a Y-type rectification module, an interleaved Boost module, an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) control module, a Boost control module and a load. The circuit has the characteristics of low ripple and wide output voltage range output, and is very wide in application prospect. Compared with a traditional rectifier, a Y-shaped rectifying structure is applied, wide-range voltage output is obtained, so that the rectifier has better performance in the field of electric automobiles and can be compatible with voltage levels of various nominal batteries, meanwhile, ripples of output current are reduced through interleaving Boost modules in parallel, output waveforms are smoother, and the power consumption of the rectifier is reduced. Ripple waves are smaller, and the device is safer, more stable, more practical and very wide in application prospect.

Description

Technical Field

[0001] The invention relates to the technical field of rectifiers, and in particular to a three-phase rectifier with low ripple and wide output voltage range. Technical Background

[0002] The current fuel cell industry and electric vehicle lithium battery industry are developing rapidly, and the requirements for rectifiers are getting higher and higher. Rectifiers are devices that convert AC power into DC power based on power electronic switching devices. The more commonly used three-phase voltage source rectifier structures are: uncontrolled bridge rectifier, half-controlled bridge rectifier, and fully controlled bridge rectifier. For the electric vehicle field, electric vehicle chargers should have efficient output power and a wide range of DC output voltage to be compatible with various nominal battery voltage levels. Traditional three-phase rectifiers have the advantages of simple structure, easy transistor control method, and low cost, but they also have the disadvantages of narrow output voltage range and large output DC voltage ripple. If you want to achieve a wide range of voltage output, you usually need to change the size of the output DC voltage by adjusting the size of the AC voltage; if you want to achieve low ripple output, you can only do it by increasing the filter inductance, but this will inevitably increase costs and losses.

[0003] In order to solve the above problems, the present invention proposes a three-phase rectifier with low ripple and wide output voltage range based on a Y-type rectifier. Summary of the invention

[0004] The purpose of the present invention is to provide a three-phase rectifier with low ripple and wide output voltage range, so as to solve the problem that the traditional three-phase full-controlled rectifier cannot achieve low ripple output and wide output voltage range.

[0005] The technical solution adopted by the present invention is: a three-phase rectifier with low ripple and wide output voltage range, including an AC voltage source module, a Y-type rectifier module, a staggered parallel Boost module, a MOSFET control module, a Boost control module, and a load; characterized in that: the AC voltage source output is connected to the Y-type rectifier module input, the MOSFET control module output is connected to the Y-type rectifier module input, the Y-type rectifier module output is connected to the staggered parallel Boost module input, the staggered parallel Boost module output is connected to the load, and the Boost control module output is connected to the staggered parallel Boost module input; the AC voltage source includes a voltage source Va, a voltage source Vb, and a voltage source Vc; the Y-type rectifier module includes a crystal switch tube T1, a crystal switch tube T2, and a crystal switch The invention relates to a transistor T3, a transistor T4, a transistor T5, a transistor T6, a transistor T7, a transistor T8, a transistor T9, a transistor T10, a transistor T11, a transistor T12, a diode D1, a diode D2, a diode D3, a diode D4, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a diode D10, a diode D11, a diode D12, an inductor L1, an inductor L2, an inductor L3, a capacitor C1, a capacitor C2, a capacitor C3, and a capacitor C4; the interleaved parallel Boost module comprises an inductor L4, an inductor L5, a transistor T13, a transistor T14, a diode D13, a diode D14, a diode D15, a diode D16, and a capacitor C5.

[0006] Among the AC voltage sources, voltage source Va, voltage source Vb and voltage source Vc are symmetrical three-phase voltage sources with equal amplitude and frequency. The phase of voltage source Va is 120° ahead of that of voltage source Vb, and the phase of voltage source Vb is 120° ahead of that of voltage source Vc. The voltage sources Va, voltage source Vb and voltage source Vc adopt a star-shaped neutral point grounding connection method. The positive electrode of voltage source Va is connected to the drain of crystal switch tube T1 and the positive electrode of capacitor C1, the positive electrode of voltage source Vb is connected to the drain of crystal switch tube T5 and the positive electrode of capacitor C2, and the positive electrode of voltage source Vc is connected to the drain of crystal switch tube T9 and the positive electrode of capacitor C3.

[0007] The MOSFET control module outputs 12 control signals, and the output interfaces are MOS tube T1, MOS tube T2, MOS tube T3, MOS tube T4, MOS tube T5, MOS tube T6, MOS tube T7, MOS tube T8, MOS tube T9, MOS tube T10, MOS tube T11, and MOS tube T12.

[0008] In the Y-type rectifier module, the gate of the crystal switch tube T1 is connected to the T1 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Va and the cathode of the diode D1, the source is connected to the anode of the diode D1 and the positive electrode of the inductor L1, the gate of the crystal switch tube T2 is connected to the T2 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D2 and the positive electrode of the inductor L1, the source is connected to the anode of the diode D2 and the negative electrode of the capacitor C1, the gate of the crystal switch tube T5 is connected to the T5 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Vb and the cathode of the diode D5, the source is connected to the anode of the diode D5 and the positive electrode of the inductor L2, the gate of the crystal switch tube T6 is connected to the MOSFET The gate of the transistor switch tube T9 is connected to the T9 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D6 and the positive electrode of the inductor L2, the source is connected to the anode of the diode D6 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T9 is connected to the T9 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Vc and the cathode of the diode D9, the source is connected to the anode of the diode D9 and the positive electrode of the inductor L3, the gate of the transistor switch tube T10 is connected to the T10 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D10 and the positive electrode of the inductor L3, the source is connected to the anode of the diode D10 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T3 is connected to the T3 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D3 The gate of the transistor switch tube T4 is connected to the T4 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D4 and the negative electrode of the inductor L1, the source is connected to the anode of the diode D4 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T7 is connected to the T7 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D7 and the positive electrode of the capacitor C4, the source is connected to the anode of the diode D7 and the negative electrode of the inductor L2, the gate of the transistor switch tube T8 is connected to the T8 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D8 and the negative electrode of the inductor L2, the source is connected to the anode of the diode D8 and the negative electrode of the capacitor C1 The gate of the crystal switch tube T11 is connected to the T11 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D11 and the positive electrode of the capacitor C4, the source is connected to the anode of the diode D11 and the negative electrode of the inductor L3, the gate of the crystal switch tube T12 is connected to the T12 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D12 and the negative electrode of the inductor L3, the source is connected to the anode of the diode D12 and the negative electrode of the capacitor C1, the positive electrode of the capacitor C1 is connected to the positive electrode of the voltage source Va, the positive electrode of the capacitor C2 is connected to the positive electrode of the voltage source Vb, and the negative electrode is connected to the negative electrode of the capacitor C1, the positive electrode of the capacitor C3 is connected to the positive electrode of the voltage source Vc, and the negative electrode is connected to the negative electrode of the capacitor C1, and the negative electrode of the capacitor C4 is connected to the negative electrode of the capacitor C1.

[0009] The Boost control module outputs two control signals, and the output interfaces are MOS tube T13 and MOS tube T14 respectively.

[0010] In the staggered parallel Boost module, the positive electrode of the inductor L4 is connected to the positive electrode of the capacitor C4, the negative electrode is connected to the anode of the diode D15, the cathode of the diode D15 is connected to the positive electrode of the capacitor C5, the gate of the transistor switch tube T13 is connected to the T13 output interface of the Boost control module, the drain is connected to the cathode of the diode D13 and the negative electrode of the inductor L4, the source is connected to the anode of the diode D13 and the negative electrode of the capacitor C4 and the negative electrode of the capacitor C5, the positive electrode of the inductor L5 is connected to the gate of the transistor switch tube T13 and ... The positive electrode of capacitor C4 is connected, the negative electrode is connected to the anode of diode D16, the cathode of diode D16 is connected to the positive electrode of capacitor C5, the gate of transistor switch tube T14 is connected to T14 output interface of Boost control module, the drain is connected to the cathode of diode D14 and the negative electrode of inductor L5, the source is connected to the anode of diode D14 and the negative electrode of capacitor C4 and the negative electrode of capacitor C5, the positive electrode of load is connected to the positive electrode of capacitor C5, and the negative electrode of load is connected to the negative electrode of capacitor C5.

[0011] The advantages of the three-phase rectifier with low ripple and wide output voltage range of the present invention are: first, in the rectifier bridge part, a Y-type connection method different from the traditional rectifier bridge is applied; second, an interleaved parallel Boost converter is added to the output part of the rectifier bridge, so that the rectifier of the present invention can achieve low ripple and wide voltage range output. Compared with the traditional three-phase fully controlled bridge rectifier, the three-phase rectifier with low ripple and wide output voltage range of the present invention has a wider output voltage range, smoother output waveform, smaller ripple, safer, more stable and practical.

[0012] In order to more clearly illustrate the three-phase rectifier with low ripple and wide output voltage range proposed by the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the three-phase rectifier with low ripple and wide output voltage range proposed by the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0014] Figure 1 The circuit structure diagram of a three-phase rectifier with low ripple and wide output voltage range according to the present invention.

[0015] Figure 2 It is the buck-boost module of phase a in the rectifier.

[0016] Figure 3 This is the operating mode when the output voltage is higher than the input voltage.

[0017] Figure 4 This is the working mode when the output voltage is lower than the input voltage.

[0018] Figure 5 These are the four working states of the interleaved parallel Boost modules within one switching cycle T. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. It should be noted that the embodiments described here are only partial embodiments of the present invention, rather than all implementation methods of the present invention, and the embodiments are only exemplary.

[0020] Figure 1 The circuit diagram of a three-phase rectifier with low ripple and wide output voltage range of the present invention is shown. Its specific structure is as follows: it includes an AC voltage source module, a Y-type rectifier module, a staggered parallel Boost module, a MOSFET control module, a Boost control module, and a load; it is characterized in that: the AC voltage source output is connected to the Y-type rectifier module input, the MOSFET control module output is connected to the Y-type rectifier module input, the Y-type rectifier module output is connected to the staggered parallel Boost module input, the Boost control module is connected to the staggered parallel Boost input, and the staggered parallel Boost module output is connected to the load; the AC voltage source includes a voltage source Va, a voltage source Vb, and a voltage source Vc; the Y-type rectifier module includes a crystal switch tube T1, a crystal switch tube T2, a crystal switch tube T3, a crystal switch tube T4, and a crystal Switch tube T5, crystal switch tube T6, crystal switch tube T7, crystal switch tube T8, crystal switch tube T9, crystal switch tube T10, crystal switch tube T11, crystal switch tube T12, diode D1, diode D2, diode D3, diode D4, diode D5, diode D6, diode D7, diode D8, diode D9, diode D10, diode D11, diode D12, inductor L1, inductor L2, inductor L3, capacitor C1, capacitor C2, capacitor C3, capacitor C4; the staggered parallel Boost module includes inductor L4, inductor L5, crystal switch tube T13, crystal switch tube T14, diode D13, diode D14, diode D15, diode D16, capacitor C5.

[0021] Among the AC voltage sources, voltage source Va, voltage source Vb and voltage source Vc are symmetrical three-phase voltage sources with equal amplitude and frequency. The phase of voltage source Va is 120° ahead of that of voltage source Vb, and the phase of voltage source Vb is 120° ahead of that of voltage source Vc. The voltage sources Va, voltage source Vb and voltage source Vc adopt a star-shaped neutral point grounding connection method. The positive electrode of voltage source Va is connected to the drain of crystal switch tube T1 and the positive electrode of capacitor C1, the positive electrode of voltage source Vb is connected to the drain of crystal switch tube T5 and the positive electrode of capacitor C2, and the positive electrode of voltage source Vc is connected to the drain of crystal switch tube T9 and the positive electrode of capacitor C3.

[0022] The MOSFET control module outputs 12 control signals, and the output interfaces are MOS tube T1, MOS tube T2, MOS tube T3, MOS tube T4, MOS tube T5, MOS tube T6, MOS tube T7, MOS tube T8, MOS tube T9, MOS tube T10, MOS tube T11, and MOS tube T12.

[0023] In the Y-type rectifier module, the gate of the crystal switch tube T1 is connected to the T1 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Va and the cathode of the diode D1, the source is connected to the anode of the diode D1 and the positive electrode of the inductor L1, the gate of the crystal switch tube T2 is connected to the T2 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D2 and the positive electrode of the inductor L1, the source is connected to the anode of the diode D2 and the negative electrode of the capacitor C1, the gate of the crystal switch tube T5 is connected to the T5 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Vb and the cathode of the diode D5, the source is connected to the anode of the diode D5 and the positive electrode of the inductor L2, the gate of the crystal switch tube T6 is connected to the MOSFET The gate of the transistor switch tube T9 is connected to the T9 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D6 and the positive electrode of the inductor L2, the source is connected to the anode of the diode D6 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T9 is connected to the T9 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Vc and the cathode of the diode D9, the source is connected to the anode of the diode D9 and the positive electrode of the inductor L3, the gate of the transistor switch tube T10 is connected to the T10 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D10 and the positive electrode of the inductor L3, the source is connected to the anode of the diode D10 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T3 is connected to the T3 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D3 The gate of the transistor switch tube T4 is connected to the T4 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D4 and the negative electrode of the inductor L1, the source is connected to the anode of the diode D4 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T7 is connected to the T7 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D7 and the positive electrode of the capacitor C4, the source is connected to the anode of the diode D7 and the negative electrode of the inductor L2, the gate of the transistor switch tube T8 is connected to the T8 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D8 and the negative electrode of the inductor L2, the source is connected to the anode of the diode D8 and the negative electrode of the capacitor C1 The gate of the crystal switch tube T11 is connected to the T11 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D11 and the positive electrode of the capacitor C4, the source is connected to the anode of the diode D11 and the negative electrode of the inductor L3, the gate of the crystal switch tube T12 is connected to the T12 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D12 and the negative electrode of the inductor L3, the source is connected to the anode of the diode D12 and the negative electrode of the capacitor C1, the positive electrode of the capacitor C1 is connected to the positive electrode of the voltage source Va, the positive electrode of the capacitor C2 is connected to the positive electrode of the voltage source Vb, and the negative electrode is connected to the negative electrode of the capacitor C1, the positive electrode of the capacitor C3 is connected to the positive electrode of the voltage source Vc, and the negative electrode is connected to the negative electrode of the capacitor C1, and the negative electrode of the capacitor C4 is connected to the negative electrode of the capacitor C1.

[0024] The Boost control module outputs two control signals, and the output interfaces are MOS tube T13 and MOS tube T14 respectively.

[0025] In the staggered parallel Boost module, the positive electrode of the inductor L4 is connected to the positive electrode of the capacitor C4, the negative electrode is connected to the anode of the diode D15, the cathode of the diode D15 is connected to the positive electrode of the capacitor C5, the gate of the transistor switch tube T13 is connected to the T13 output interface of the Boost control module, the drain is connected to the cathode of the diode D13 and the negative electrode of the inductor L4, the source is connected to the anode of the diode D13 and the negative electrode of the capacitor C4 and the negative electrode of the capacitor C5, the positive electrode of the inductor L5 is connected to the gate of the transistor switch tube T13 and ... The positive electrode of capacitor C4 is connected, the negative electrode is connected to the anode of diode D16, the cathode of diode D16 is connected to the positive electrode of capacitor C5, the gate of transistor switch tube T14 is connected to T14 output interface of Boost control module, the drain is connected to the cathode of diode D14 and the negative electrode of inductor L5, the source is connected to the anode of diode D14 and the negative electrode of capacitor C4 and the negative electrode of capacitor C5, the positive electrode of load is connected to the positive electrode of capacitor C5, and the negative electrode of load is connected to the negative electrode of capacitor C5.

[0026] Next, please refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 The difference between the Y-type rectifier bridge structure used in the present invention and the traditional IGBT three-phase fully controlled bridge voltage source rectifier is that the present invention adds 6 groups of MOSFET transistors and 6 groups of corresponding freewheeling diodes to the rectifier bridge to achieve a wide voltage output range. The Y-type rectifier bridge part is composed of three buck-boost modules. Figure 2 The control strategies of the three modules are independent of each other, which means that the control strategy of the three phases is relatively simple. Taking the voltage of phase a as an example, by keeping transistor T1 continuously turned on and transistor T2 continuously turned off, we get Figure 3 , at this time, the a-phase buck-boost module is in buck mode, and the output voltage is lower than the input voltage; by keeping transistor T3 turned on continuously and transistor T4 turned off continuously, we get Figure 4 At this time, the a-phase buck-boost module is in boost mode, and the output voltage is higher than the input voltage. The on-off principles of the other two phases are the same. In this way, the three-phase AC power passes through the buck-boost module of the Y-type rectifier and outputs DC power with a wide voltage range.

[0027] Then, after the above rectification process, the output of the Y-type full-bridge rectifier module is approximately a DC voltage. This output voltage is the input voltage of the staggered parallel Boost module. The staggered parallel Boost module is formed by connecting two-phase Boost circuits in parallel, making the two-phase bridge arm inductors L4 and L5 the same, the two-phase duty cycles equal, and the phase difference of the Boost control module drive signal is 180°. Figure 5 The four working states of the staggered parallel Boost module in one switching cycle T. State 1: Transistor T13 and transistor T14 are both turned on, charging inductor L4 and inductor L5, and the current increases linearly. In this state, the load is powered by capacitor C5; State 2: Transistor T13 is turned on, charging inductor L4, and the current continues to increase. Transistor T14 is turned off, inductor L5 is discharged, and the current decreases linearly. In this state, the load is powered by the branch where inductor L5 is located. State 3: Transistor T13 and transistor T14 are both turned on, charging inductor L4 and inductor L5, and the current increases linearly. In this state, the load is powered by capacitor C5; State 4: Transistor T14 is turned on, charging inductor L5, and the current continues to increase. Transistor T13 is turned off, inductor L4 is discharged, and the current decreases linearly. In this state, the load is powered by the branch where inductor L4 is located. The input current of the staggered parallel Boost module is the sum of the currents of inductor L4 and inductor L5. In this way, the current ripples of inductor L4 and inductor L5 are superimposed together, and the input current ripple of the staggered parallel Boost module is reduced, which also reduces the voltage ripple, makes the waveform smoother, and brings less impact to the electric vehicle battery.

[0028] The above description is only a preferred embodiment of the present invention, but is not intended to limit the present invention. Those skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the definition of the claims.

Claims

1. A three-phase rectifier with low ripple and wide output voltage range, comprising an AC voltage source module, a Y-type rectifier module, a staggered parallel Boost module, a MOSFET control module, a Boost control module, and a load; characterized in that: The output of the AC voltage source is connected to the input of the Y-type rectifier module, the output of the MOSFET control module is connected to the input of the Y-type rectifier module, the output of the Y-type rectifier module is connected to the input of the staggered parallel Boost module, the Boost control circuit is connected to the staggered parallel Boost input, and the output of the staggered parallel Boost module is connected to the load; the AC voltage source includes a voltage source Va, a voltage source Vb, and a voltage source Vc; the Y-type rectifier module includes a crystal switch tube T1, a crystal switch tube T2, a crystal switch tube T3, a crystal switch tube T4, a crystal switch tube T5, a crystal switch tube T6, a crystal switch tube T7, a crystal switch tube T8, a crystal switch Tube T9, crystal switch tube T10, crystal switch tube T11, crystal switch tube T12, diode D1, diode D2, diode D3, diode D4, diode D5, diode D6, diode D7, diode D8, diode D9, diode D10, diode D11, diode D12, inductor L1, inductor L2, inductor L3, capacitor C1, capacitor C2, capacitor C3, capacitor C4; the staggered parallel Boost module includes inductor L4, inductor L5, crystal switch tube T13, crystal switch tube T14, diode D13, diode D14, diode D15, diode D16, capacitor C5. A three-phase rectifier with low ripple and wide output voltage range as claimed in claim 1, characterized in that: Among the AC voltage sources, voltage source Va, voltage source Vb and voltage source Vc are symmetrical three-phase voltage sources with equal amplitude and frequency. The phase of voltage source Va is 120° ahead of that of voltage source Vb, and the phase of voltage source Vb is 120° ahead of that of voltage source Vc. The voltage sources Va, voltage source Vb and voltage source Vc adopt a star-shaped neutral point grounding connection method. The positive electrode of voltage source Va is connected to the drain of crystal switch tube T1 and the positive electrode of capacitor C1, the positive electrode of voltage source Vb is connected to the drain of crystal switch tube T5 and the positive electrode of capacitor C2, and the positive electrode of voltage source Vc is connected to the drain of crystal switch tube T9 and the positive electrode of capacitor C3. A three-phase rectifier with low ripple and wide output voltage range as claimed in claim 2, characterized in that: The MOSFET control module outputs 12 control signals, and the output interfaces are MOS tube T1, MOS tube T2, MOS tube T3, MOS tube T4, MOS tube T5, MOS tube T6, MOS tube T7, MOS tube T8, MOS tube T9, MOS tube T10, MOS tube T11, and MOS tube T12; the Boost control module outputs 2 control signals, and the output interfaces are MOS tube T13 and MOS tube T14. A three-phase rectifier with low ripple and wide output voltage range as claimed in claim 3, characterized in that: In the Y-type rectifier module, the gate of the crystal switch tube T1 is connected to the T1 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Va and the cathode of the diode D1, the source is connected to the anode of the diode D1 and the positive electrode of the inductor L1, the gate of the crystal switch tube T2 is connected to the T2 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D2 and the positive electrode of the inductor L1, the source is connected to the anode of the diode D2 and the negative electrode of the capacitor C1, the gate of the crystal switch tube T5 is connected to the T5 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Vb and the cathode of the diode D5, the source is connected to the anode of the diode D5 and the positive electrode of the inductor L2, the gate of the crystal switch tube T6 is connected to the MOSFET The gate of the transistor switch tube T9 is connected to the T9 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D6 and the positive electrode of the inductor L2, the source is connected to the anode of the diode D6 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T9 is connected to the T9 output interface of the MOSFET control module, the drain is connected to the positive electrode of the voltage source Vc and the cathode of the diode D9, the source is connected to the anode of the diode D9 and the positive electrode of the inductor L3, the gate of the transistor switch tube T10 is connected to the T10 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D10 and the positive electrode of the inductor L3, the source is connected to the anode of the diode D10 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T3 is connected to the T3 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D3 The gate of the transistor switch tube T4 is connected to the T4 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D4 and the negative electrode of the inductor L1, the source is connected to the anode of the diode D4 and the negative electrode of the capacitor C1, the gate of the transistor switch tube T7 is connected to the T7 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D7 and the positive electrode of the capacitor C4, the source is connected to the anode of the diode D7 and the negative electrode of the inductor L2, the gate of the transistor switch tube T8 is connected to the T8 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D8 and the negative electrode of the inductor L2, the source is connected to the anode of the diode D8 and the negative electrode of the capacitor C1 The gate of the crystal switch tube T11 is connected to the T11 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D11 and the positive electrode of the capacitor C4, the source is connected to the anode of the diode D11 and the negative electrode of the inductor L3, the gate of the crystal switch tube T12 is connected to the T12 output interface of the MOSFET control module, the drain is connected to the cathode of the diode D12 and the negative electrode of the inductor L3, the source is connected to the anode of the diode D12 and the negative electrode of the capacitor C1, the positive electrode of the capacitor C1 is connected to the positive electrode of the voltage source Va, the positive electrode of the capacitor C2 is connected to the positive electrode of the voltage source Vb, and the negative electrode is connected to the negative electrode of the capacitor C1, the positive electrode of the capacitor C3 is connected to the positive electrode of the voltage source Vc, and the negative electrode is connected to the negative electrode of the capacitor C1, and the negative electrode of the capacitor C4 is connected to the negative electrode of the capacitor C1. A three-phase rectifier with low ripple and wide output voltage range as claimed in claim 4, characterized in that: In the staggered parallel Boost module, the positive electrode of the inductor L4 is connected to the positive electrode of the capacitor C4, the negative electrode is connected to the anode of the diode D15, the cathode of the diode D15 is connected to the positive electrode of the capacitor C5, the gate of the transistor switch tube T13 is connected to the T13 output interface of the Boost control module, the drain is connected to the cathode of the diode D13 and the negative electrode of the inductor L4, the source is connected to the anode of the diode D13 and the negative electrode of the capacitor C4 and the negative electrode of the capacitor C5, the positive electrode of the inductor L5 is connected to the gate of the transistor switch tube T13 and the T13 output interface of the Boost control module, the drain is connected to the cathode of the diode D13 and the negative electrode of the inductor L4, the source is connected to the anode of the diode D13 and the negative electrode of the capacitor C4 and the negative electrode of the capacitor C5, the positive electrode of the inductor The positive electrode of capacitor C4 is connected, the negative electrode is connected to the anode of diode D16, the cathode of diode D16 is connected to the positive electrode of capacitor C5, the gate of transistor switch tube T14 is connected to T14 output interface of Boost control module, the drain is connected to the cathode of diode D14 and the negative electrode of inductor L5, the source is connected to the anode of diode D14 and the negative electrode of capacitor C4 and the negative electrode of capacitor C5, the positive electrode of load is connected to the positive electrode of capacitor C5, and the negative electrode of load is connected to the negative electrode of capacitor C5.

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