Light emitting diode device and display panel

Abstract

The embodiment of the invention discloses a light emitting diode device and a display panel. The light emitting diode device comprises a first current expansion layer; the active layer is arranged on the first current expansion layer, and the active layer comprises at least one multi-quantum well part; the first conductive pad is arranged on the far side of the first current expansion layer and is positioned on one side of the active layer; the second current expansion layer is arranged on one side, far away from the first current expansion layer, of the active layer, and the second current expansion layer comprises at least one conductive part; the second conductive pad is arranged on one side, far away from the first current expansion layer, of the second current expansion layer; according to the invention, the size of one of the multi-quantum well part and the conductive part is reduced, or a multi-mode driving mode is adopted, so that the effect of improving the working current density is achieved, and the luminous efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light emitting diode device and a display panel. Background Art

[0002] Micro-LEDs have the technical advantages of high brightness, high transmittance and high contrast, and have attracted more and more attention in recent years. However, due to the characteristics of LED chips (hereinafter referred to as chips), their optimal current efficiency varies under different operating currents. Generally speaking, the higher the current density, the higher the electro-optical conversion efficiency (Wall-Plug Efficiency, WPE) of the chip. Generally speaking, the smaller the chip size, the higher the current density at the same current.

[0003] However, due to the current limited process capabilities of transfer bonding, there are certain requirements for the chip's external dimensions. For example, the common chip sizes are 15*30μm, 15*25μm, etc. Generally, the chip size is less than 20μm, and the chip pad size and the gap between the pads may not match the transfer bonding process. The process accuracy of transfer bonding cannot meet the requirements, so the chip size cannot be continuously miniaturized; but on the other hand, if the panel resolution specification increases or the display brightness requirement decreases, the chip size will not decrease, and the chip's operating current will not be able to reach the current density for optimal efficiency, resulting in a significant increase in the product's power consumption.

[0004] For example, under the same brightness requirement, if the panel resolution increases, the spacing between chips will decrease, and the chip's demand for current will be greatly reduced, resulting in a decrease in current density, a decrease in chip WPE, and an increase in product power consumption. Summary of the invention

[0005] The embodiments of the present application provide a light emitting diode device and a display panel, which can improve the light emitting efficiency of the light emitting diode device.

[0006] In one aspect, an embodiment of the present application provides a light emitting diode device, comprising:

[0007] a first current spreading layer;

[0008] An active layer, disposed on the first current spreading layer, the active layer comprising at least one multi-quantum well portion;

[0009] A first conductive pad, disposed on the first current spreading layer and located on one side of the active layer;

[0010] A second current spreading layer, disposed on a side of the active layer away from the first current spreading layer, the second current spreading layer comprising at least one conductive portion; and

[0011] A second conductive pad is arranged on a side of the second current spreading layer away from the first current spreading layer;

[0012] Among them, in the orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the at least one multi-quantum well portion and the orthographic projection of the at least one conductive portion at least partially overlap, and the orthographic projection area of ​​the at least one multi-quantum well portion is different from the orthographic projection area of ​​the at least one conductive portion.

[0013] Optionally, in some embodiments of the present application, in an orthographic projection based on the plane where the first current spreading layer is located, one of the orthographic projection of the at least one multi-quantum well portion and the orthographic projection of the at least one conductive portion is within the other.

[0014] Optionally, in some embodiments of the present application, in an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the at least one multi-quantum well portion is within the orthographic projection of the conductive portion, and the orthographic projection area of ​​the at least one multi-quantum well portion is smaller than the orthographic projection area of ​​the conductive portion;

[0015] The active layer further includes a first insulating portion, the first insulating portion is located on at least one side of the multi-quantum well portion, and the conductive portion covers the multi-quantum well portion and the first insulating portion.

[0016] Optionally, in some embodiments of the present application, in a first direction parallel to a side edge of the substrate, a length of the multi-quantum well portion is smaller than a length of the conductive portion.

[0017] Optionally, in some embodiments of the present application, the number of the multi-quantum well portions is one, the number of the second conductive pad is one, and in an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the multi-quantum well portion at least partially overlaps with the orthographic projection of the second conductive pad.

[0018] Optionally, in some embodiments of the present application, the number of the multi-quantum well sections is at least two, the first insulating section is arranged between two adjacent multi-quantum well sections, each of the multi-quantum well sections corresponds to a second conductive pad, and at least two of the second conductive pads are connected and arranged on the conductive section.

[0019] Optionally, in some embodiments of the present application, in an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the at least one conductive portion is within the orthographic projection of the multi-quantum well portion, and the orthographic projection area of ​​the at least one conductive portion is smaller than the orthographic projection area of ​​the multi-quantum well portion;

[0020] The second current spreading layer further includes a second insulating portion, the second insulating portion is located on at least one side of the conductive portion, and the conductive portion and the second insulating portion are disposed on the multi-quantum well portion.

[0021] Optionally, in some embodiments of the present application, in a first direction parallel to a side of the first current spreading layer, a length of the conductive portion is smaller than a length of the multi-quantum well portion.

[0022] Optionally, in some embodiments of the present application, the number of the conductive parts is one, the number of the second conductive pad is one, and in the orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the multi-quantum well part at least partially overlaps with the orthographic projection of the second conductive pad.

[0023] Optionally, in some embodiments of the present application, the number of the conductive parts is at least two, the insulating part is arranged between two adjacent conductive parts, and each of the conductive parts is connected to a second conductive pad.

[0024] On the other hand, an embodiment of the present application further provides a light emitting diode device, comprising:

[0025] a first current spreading layer;

[0026] An active layer, disposed on the first current spreading layer;

[0027] A first conductive pad, disposed on the first current spreading layer and located on one side of the active layer;

[0028] A second current spreading layer is disposed on a side of the active layer away from the first current spreading layer; and

[0029] At least two second conductive pads are disposed on a side of the second current spreading layer away from the first current spreading layer.

[0030] Optionally, in some embodiments of the present application, the active layer includes at least one multi-quantum well portion, and the second current spreading layer includes at least one conductive portion;

[0031] In which, in the orthographic projection based on the plane where the first current spreading layer is located, one of the orthographic projection of the at least one multi-quantum well portion and the orthographic projection of the at least one conductive portion is within the other, and the orthographic projection area of ​​the at least one multi-quantum well portion is different from the orthographic projection area of ​​the at least one conductive portion.

[0032] Optionally, in some embodiments of the present application, the active layer includes a first insulating portion and at least two multi-quantum well portions, the first insulating portion is arranged between two adjacent multi-quantum well portions, each of the multi-quantum well portions corresponds to one second conductive pad, and at least two of the second conductive pads are connected and arranged on the conductive portion;

[0033] In an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projections of at least two of the multi-quantum well portions are within the orthographic projection of one of the conductive portions, and the sum of the orthographic projection areas of at least two of the multi-quantum well portions is smaller than the orthographic projection area of ​​the conductive portion.

[0034] Optionally, in some embodiments of the present application, the second current spreading layer further includes a second insulating portion and at least two conductive portions, the second insulating portion is located between two adjacent conductive portions, the conductive portion and the second insulating portion are arranged on the multi-quantum well portion, and each conductive portion is connected to a second conductive pad;

[0035] In an orthographic projection based on the plane where the substrate is located, orthographic projections of at least two of the conductive portions are within an orthographic projection of a multi-quantum well portion, and a sum of orthographic projection areas of at least two of the conductive portions is smaller than an orthographic projection area of ​​the multi-quantum well portion.

[0036] In another aspect, an embodiment of the present application further provides a display panel, comprising a driving substrate and a light emitting diode device as described in any one of the above embodiments, wherein the light emitting diode device is disposed on the driving substrate;

[0037] Wherein, the display panel further comprises a plurality of lenses, and one of the lenses is correspondingly arranged at the light emitting side of one of the light emitting diode devices.

[0038] Optionally, in some embodiments of the present application, in a top plan view of the display panel, the lens fully covers the active layer and is located on the outside of the first conducting pad.

[0039] The light-emitting diode device and display panel of the embodiments of the present application reduce the size of one of the multi-quantum well portion and the conductive portion, or adopt a multi-mode driving method to achieve the effect of increasing the operating current density, thereby improving the luminous efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 is a schematic diagram of a first cross-sectional structure of a light emitting diode device provided by one or more embodiments of the present application;

[0041] Figure 2 is a first top plan view of a light emitting diode device provided by one or more embodiments of the present application;

[0042] Figure 3 is a second cross-sectional structural schematic diagram of a light emitting diode device provided by one or more embodiments of the present application;

[0043] Figure 4 is a second top plan view of a light emitting diode device provided by one or more embodiments of the present application;

[0044] Figure 5 is a third cross-sectional structural schematic diagram of a light emitting diode device provided by one or more embodiments of the present application;

[0045] Figure 6 is a fourth cross-sectional structural schematic diagram of a light emitting diode device provided by one or more embodiments of the present application;

[0046] Figure 7 is a third top plan view of a light emitting diode device provided by one or more embodiments of the present application;

[0047] Figure 8 is a fifth cross-sectional structural schematic diagram of a light emitting diode device provided by one or more embodiments of the present application;

[0048] Fig. 9 is a sixth cross-sectional structural schematic diagram of a light emitting diode device provided by one or more embodiments of the present application;

[0049] Fig.10 is a schematic diagram of a first cross-sectional structure of a display panel provided by one or more embodiments of the present application;

[0050] Fig.11 This is a schematic diagram of a second cross-sectional structure of a display panel provided by one or more embodiments of the present application. DETAILED DESCRIPTION

[0051] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, the various embodiments can be combined with each other but will not be repeated one by one, and in the absence of contrary instructions, the directional words used, such as "upper" and "lower", usually refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the drawings; while "inside" and "outside" refer to the outline of the device; the terms "first", "second", "third", etc. are used only as markings, and no numerical requirements are imposed or order is established.

[0052] The embodiments of the present application provide a light emitting diode device and a display panel, which are described in detail below. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments.

[0053] Please refer to Figures 1 to 4 The embodiment of the present application provides a light emitting diode device 100. The light emitting diode device 100 may be a micro light emitting diode device or a sub-millimeter light emitting diode device, but is not limited thereto.

[0054] The light emitting diode device 100 includes a first current spreading layer 12 , an active layer 13 , a first conducting pad 14 , a second current spreading layer 15 and a second conducting pad 16 .

[0055] The active layer 13 is disposed on the first current spreading layer 12, and the active layer 13 includes at least one multi-quantum well portion 131. The first conductive pad 14 is disposed on the first current spreading layer 12 and is located on one side of the active layer 13. The second current spreading layer 15 is disposed on a side of the active layer 13 away from the first current spreading layer 12. The second current spreading layer 15 includes at least one conductive portion 151. The second conductive pad 16 is disposed on a side of the second current spreading layer 15 away from the first current spreading layer 12.

[0056] In some embodiments, the light emitting diode device 100 may also include a substrate 11, and the first current spreading layer 12 is disposed on the substrate 11. The active layer 13 is disposed on a side of the first current spreading layer 12 away from the substrate 11. The following description is made by taking the light emitting diode device 100 including the substrate 11 as an example, but is not limited thereto. For example, the light emitting diode device 100 is not provided with the substrate 11.

[0057] In which, in the orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, the orthographic projection of at least one multi-quantum well portion 131 and the orthographic projection of at least one conductive portion 151 at least partially overlap, and the orthographic projection area of ​​at least one multi-quantum well portion 131 and the orthographic projection area of ​​at least one conductive portion 151 are different.

[0058] It should be explained that the orthographic projection area of ​​at least one multi-quantum well portion 131 is the sum of the orthographic projection areas of all multi-quantum well portions 131 , and the orthographic projection area of ​​at least one conductive portion 151 is the sum of the orthographic projection areas of all conductive portions 151 .

[0059] The light emitting diode device 100 of the embodiment of the present application reduces the size of one of the multi-quantum well portion and the conductive portion to achieve the effect of increasing the operating current density, thereby improving the WPE efficiency and the external quantum efficiency (EQE) efficiency while reducing power consumption.

[0060] In addition, since the overall size of the light-emitting diode device 100 is not changed according to the embodiments disclosed in the present application, the common embodiments of the present application can meet the requirements of the mass transfer process of the micro light-emitting diode device 100.

[0061] It can be understood that the current density is the value of total current divided by the area of ​​the quantum well layer. The external quantum efficiency is the number of electrons passing through the PN junction of the light emitting diode device 100 per unit time.

[0062] In some embodiments, in an orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, one of the orthographic projection of the at least one multi-quantum well portion 131 and the orthographic projection of the at least one conductive portion 151 is within the other. Such a setting can save layout space.

[0063] It can be understood that one of the orthographic projection of at least one multi-quantum well portion 131 and the orthographic projection of at least one conductive portion 151 is within the other, and the orthographic projection of the entire multi-quantum well portion 131 can be within the orthographic projection of the entire conductive portion 151, or the orthographic projection of the entire conductive portion 151 can be within the orthographic projection of the entire multi-quantum well portion 131.

[0064] Among them, when the orthographic projection of the overall multi-quantum well portion 131 is within the orthographic projection of the overall conductive portion 151, the embodiment of the present application reduces the size of the quantum well layer; when the orthographic projection of the overall conductive portion 151 is within the orthographic projection of the overall multi-quantum well portion 131, the embodiment of the present application reduces the size of the conductive portion 151.

[0065] Optionally, the substrate 11 may be a hard substrate or a flexible substrate, such as but not limited to sapphire, silicon, gallium nitride, silicon carbide, glass, and polyimide.

[0066] Optionally, the first current spreading layer 12 may be an N-GaN layer, but is not limited thereto. The conductive portion 151 of the second current spreading layer 15 may be a P-GaN portion, but is not limited thereto.

[0067] Optionally, the multi-quantum well portion may be formed by stacking multiple quantum well layers.

[0068] Optionally, the first conductive pad 14 is the output terminal of the light emitting diode device 100, and the second conductive pad 16 is the input terminal of the light emitting diode device 100. The materials of the first conductive pad 14 and the second conductive pad 16 can each be at least one of a metal, a metal alloy, and a metal oxide. The first conductive pad 14 and the second conductive pad 16 can each be a single-layer film layer or a stack of multiple film layers, such as Ti / Al / Ti / Au.

[0069] Optionally, the light emitting diode device 100 may further include a reflective layer 17 , which covers the second current spreading layer 15 . The reflective layer 17 has an opening for exposing the second current spreading layer 15 , and the second conductive pad 16 covers the opening and is connected to the second current spreading layer 15 .

[0070] Optionally, the reflection layer 17 may be a Bragg reflection layer or a mirror reflection layer.

[0071] Optional, Figures 1 to 4 It shows a schematic diagram of a light emitting diode device 100 in which the entire second current spreading layer 15 is kept as a conductive layer, that is, the conductive portion 151 is equivalent to the second current spreading layer 15 and the size of the quantum well layer is reduced.

[0072] exist Figures 1 to 4 , the first direction F1 may be a direction parallel to one side of the light emitting diode device 100 in a plan view, and may be, for example, a lateral direction of the light emitting diode device 100. The second direction F2 may be a direction parallel to the other side of the light emitting diode device 100 in a plan view, and may be a longitudinal direction of the light emitting diode device 100. The third direction F3 may be a thickness direction of the light emitting diode device 100.

[0073] Optionally, the shape of the light emitting diode device 100 is a rectangle, the first direction F1 is the long side direction of the light emitting diode device 100, and the second direction F2 is the short side direction of the light emitting diode device 100, but it is not limited thereto. For example, the light emitting diode device 100 is a square. Of course, in some other embodiments, the shape of the light emitting diode device 100 can also be other shapes such as a circle or a diamond.

[0074] In some embodiments of the present application, in an orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, the orthographic projection of the at least one multi-quantum well portion 131 is within the orthographic projection of a conductive portion 151 , and the orthographic projection area of ​​the at least one multi-quantum well portion 131 is smaller than the orthographic projection area of ​​the conductive portion 151 .

[0075] The active layer 13 further includes a first insulating portion 132, and the first insulating portion 132 is located at least on one side of the multi-quantum well portion 131. The conductive portion 151 covers the multi-quantum well portion 131 and the first insulating portion 132.

[0076] It should be understood that the embodiments disclosed in the present application improve the WPE efficiency and external quantum efficiency (EQE) efficiency of the light-emitting diode device 100 while reducing power consumption by reducing the area of ​​the multi-quantum well portion 131 and increasing the current density of the multi-quantum well portion 131.

[0077] Secondly, the reduction in the area of ​​the multi-quantum well portion 131 forms a focusing effect in the multi-quantum well portion 131, which increases the recombination rate of holes and electrons and improves the luminous efficiency; then, the reduction in the area of ​​the multi-quantum well portion 131 optimizes the injection conditions, making the injection of holes and electrons in the multi-quantum well portion 131 more efficient, reducing the loss of non-radiative recombination and improving the luminous efficiency.

[0078] It needs to be explained that Figures 1 to 4 The diagram shows a multi-quantum well portion 131 with a second conductive pad 16, wherein, in an orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, the orthographic projection of the multi-quantum well portion 131 at least partially overlaps with the orthographic projection of the second conductive pad 16. However, the embodiments of the present application are not limited thereto, for example, at least two multi-quantum well portions 131 are matched with a second conductive pad 16.

[0079] exist Figure 1 to Figure 2 In the embodiment, first insulating portions 132 are provided on both sides of the multi-quantum well portion 131. Figure 3 to Figure 4 In the embodiment, a first insulating portion 132 is disposed on a side of the multi-quantum well portion 131 away from the first conductive pad 14. The multi-quantum well portion 131 is close to the first conductive pad 14, which can shorten the path of the current and improve the light emitting efficiency.

[0080] Optionally, in some embodiments of the present application, in a first direction F1 parallel to a side of the substrate 11 and / or the first current spreading layer 12 , the length of the multi-quantum well portion 131 is smaller than the length of the conductive portion 151 .

[0081] That is, by shortening the length of the multi-quantum well portion 131 , the area of ​​the multi-quantum well portion 131 can be reduced, thereby increasing the current density of the multi-quantum well portion 131 .

[0082] Optionally, in some embodiments of the present application, in the first direction F1 , the length of the multi-quantum well portion 131 is less than 2 / 3 of the length of the substrate 11 .

[0083] It is understandable that the ratio of the length of the quantum well layer of an existing light-emitting diode to the length of the light-emitting diode is generally 2 / 3. Therefore, the light-emitting diode device 100 of the embodiment of the present application reduces the length ratio of the multi-quantum well portion 131 to reduce the area of ​​the multi-quantum well portion 131 and thereby increase the current density of the multi-quantum well portion 131.

[0084] Please refer to Figure 5 , Figure 5 The embodiment shown is an embodiment in which two multi-quantum well portions 131 are matched with two second conductive pads 16. Figures 1 to 4 Different parts of the light emitting diode device 100 of the corresponding embodiment are described to avoid redundant explanation.

[0085] Optionally, in some embodiments of the present application, there are at least two multi-quantum well sections 131. A first insulating section 132 is disposed between two adjacent multi-quantum well sections 131, each multi-quantum well section 131 corresponds to a second conductive pad 16, and at least two second conductive pads 16 are connected and disposed on the conductive section 151.

[0086] It is understandable that, when the total area of ​​the multi-quantum well portion 131 is reduced, at least two second conductive pads 16 are used to perform multi-mode driving of the light-emitting diode device 100, so that different driving modes can be selected according to different current density requirements to match the optimal WPE efficiency of the light-emitting diode device 100.

[0087] Optionally, in some embodiments of the present application, the at least two second conductive pads 16 may be connected to the same current or different currents. The areas of two of the at least two second conductive pads 16 may be the same or different.

[0088] Optionally, in some embodiments of the present application, among the at least two second conducting pads 16 , at least one second conducting pad 16 is closer to the first conducting pad 14 to form different current path lengths.

[0089] If a single second conductive pad 16 is driven, the second conductive pad 16 with the shortest current path length can be selected as the input end, which can reduce the current distribution area, that is, reduce the effective area through which the current passes, thereby substantially increasing the effective current density.

[0090] by Figure 5 Taking the corresponding implementation as an example, the two second conductive pads 16 are respectively a first input pad 161 and a second input pad 162. The first input pad 161 and the second input pad 162 can be connected to the same current. The area of ​​the first input pad 161 and the area of ​​the second input pad 162 can be the same.

[0091] Compared with the first input pad 161, the second input pad 162 is closer to the first conductive pad 14. Therefore, in the single-drive mode, compared with the first input pad 161 as the input end, the second input pad 162 as the input end has a shorter current path, so that the current does not need to completely flow through the total area of ​​all multi-quantum well portions 131, that is, the local area of ​​the multi-quantum well portion 131 is not utilized, which indirectly reduces the effective area of ​​the multi-quantum well portion 131, so that the light-emitting diode device 100 has a higher effective current density, thereby improving the WPE and EQE effects.

[0092] Compared with the single drive mode, in the dual drive mode, under the same total current, the first input pad 161 and the second input pad 162 are both connected to the current, the current distribution area becomes larger, the current distribution is more uniform, and the multi-quantum well portion 131 is more utilized, that is, the multi-quantum well portion 131 has a larger effective area. Therefore, under the same total current, the effective current density of the dual drive mode is smaller.

[0093] Of course, in some other implementations, the current density can also be adjusted by adjusting the total current, for example, the first input pad 161 is constantly connected to the first current, and the second input pad 162 is constantly connected to the second current. Then in the single-drive mode, only the first current or the second current is connected; in the dual-drive mode, the first current and the second current are connected at the same time. Compared with the single-drive mode, the total current in the dual-drive mode is larger and the current density is larger.

[0094] Optionally, in some embodiments of the present application, in a first direction F1 parallel to a side of the substrate 11 and / or the first current spreading layer 12 , the sum of the lengths of all the multi-quantum well portions 131 is smaller than the length of the conductive portion 151 .

[0095] That is, by shortening the length of the multi-quantum well portion 131 , the area of ​​the multi-quantum well portion 131 can be shortened, thereby increasing the current density of the multi-quantum well portion 131 .

[0096] Optionally, in some embodiments of the present application, in the first direction F1 , the sum of the lengths of all the multi-quantum well portions 131 is less than 2 / 3 of the length of the substrate 11 .

[0097] It is understandable that the ratio of the length of the quantum well layer of an existing light-emitting diode to the length of the light-emitting diode is generally 2 / 3. Therefore, the light-emitting diode device 100 of the embodiment of the present application reduces the length ratio of the multi-quantum well portion 131 to reduce the area of ​​the multi-quantum well portion 131 and thereby increase the current density of the multi-quantum well portion 131.

[0098] Please refer to Figure 6-Figure 7 , Figure 6-Figure 7 It is a schematic diagram of a light emitting diode device 100 in which the entire active layer 13 is a multi-quantum well layer, that is, the multi-quantum well portion 131 is equivalent to the active layer 13 , and the size of the conductive portion 151 is reduced.

[0099] exist Figure 6 to Figure 7 In this paper, we will explain Figures 1 to 4 Different parts of the light emitting diode device 100 of the corresponding embodiment are described to avoid redundant explanation.

[0100] Optionally, in some embodiments of the present application, in an orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, the orthographic projection of the at least one conductive portion 151 is within the orthographic projection of a multi-quantum well portion 131, and the orthographic projection area of ​​the at least one conductive portion 151 is smaller than the orthographic projection area of ​​the multi-quantum well portion 131.

[0101] The second current spreading layer 15 further includes a second insulating portion 152 . The second insulating portion 152 is located on at least one side of the conductive portion 151 . The conductive portion 151 and the second insulating portion 152 are disposed on the multi-quantum well portion 131 .

[0102] It should be understood that the embodiment disclosed in the present application reduces the area of ​​the conductive portion 151. Under the condition of the same current, the current per unit area on the smaller conductive portion 151 increases. On the other hand, the reduction in the area of ​​the conductive portion 151 reduces the path length of the current lateral diffusion in the conductive portion 151, reduces the area utilization rate of the multi-quantum well portion 131, and indirectly reduces the effective area of ​​the multi-quantum well portion 131 (the area through which current actually passes), thereby increasing the effective current density, thereby improving the WPE efficiency and external quantum efficiency (EQE) efficiency of the light-emitting diode device 100 while reducing power consumption.

[0103] Secondly, the reduction in the area of ​​the conductive portion 151 causes a focusing effect on the current, allowing more holes to flow to the multi-quantum well portion, thereby increasing the concentration and recombination rate of holes in the multi-quantum well portion 131, and thereby improving the luminous efficiency; in addition, based on the reduction in the lateral diffusion path of the current in the conductive portion 151, the recombination loss of holes before reaching the multi-quantum well portion 131 is reduced, thereby improving the luminous efficiency.

[0104] It needs to be explained that Figure 6 to Figure 7 The schematic diagram shown is a conductive portion 151 with a second conductive pad 16, wherein, in the orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, the orthographic projection of the multi-quantum well portion 131 at least partially overlaps with the orthographic projection of the second conductive pad 16. However, the embodiments of the present application are not limited thereto, for example, at least two conductive portions 151 are matched with a second conductive pad 16.

[0105] exist Figure 6 to Figure 7 In the embodiment, the second insulating portion 152 is disposed on a side of the conductive portion 151 away from the first conductive pad 14. The conductive portion 151 is close to the first conductive pad 14, which can shorten the path of the current and improve the light emitting efficiency.

[0106] Optionally, in some embodiments of the present application, in a first direction parallel to a side of the substrate 11 and / or the first current spreading layer 12 , the length of the conductive portion 151 is smaller than the length of the multi-quantum well portion 131 .

[0107] That is, by shortening the length of the conductive portion 151 , the area of ​​the conductive portion 151 can be reduced, thereby increasing the effective current density of the multi-quantum well portion 131 .

[0108] Optionally, in some embodiments of the present application, in the first direction, the length of the conductive portion 151 is less than 2 / 3 of the length of the substrate 11 .

[0109] It is understandable that the ratio of the length of the P-GaN layer of the existing light-emitting diode to the length of the light-emitting diode is generally 2 / 3. Therefore, the light-emitting diode device 100 of the embodiment of the present application reduces the length ratio of the conductive portion 151 to reduce the area of ​​the conductive portion 151 and thereby increase the effective current density of the multi-quantum well portion 131.

[0110] Please refer to Figure 8 , Figure 8 The embodiment shown is an embodiment in which two conductive parts 151 are matched with two second conductive pads 16. Figure 6 to Figure 7 Different parts of the light emitting diode device 100 of the corresponding embodiment are described to avoid redundant explanation.

[0111] Optionally, in some embodiments of the present application, there are at least two conductive parts 151. A second insulating part 152 is disposed between two adjacent conductive parts 151. A second conductive pad 16 is connected to each conductive part 151.

[0112] It is understandable that, when the total area of ​​the conductive portion 151 is reduced, at least two second conductive pads 16 are used to perform multi-mode driving of the light-emitting diode device 100, so that different driving modes can be selected according to different current density requirements to match the optimal WPE efficiency of the light-emitting diode device 100.

[0113] Optionally, in some embodiments of the present application, among the at least two second conducting pads 16 , at least one second conducting pad 16 is closer to the first conducting pad 14 to form different current path lengths.

[0114] If a single second conductive pad 16 is driven, the second conductive pad 16 with the shortest current path length can be selected as the input end, which can reduce the current distribution area, that is, reduce the effective area through which the current passes, thereby substantially increasing the effective current density.

[0115] by Figure 8 Taking the corresponding implementation as an example, the two second conductive pads 16 are respectively a first input pad 161 and a second input pad 162. The first input pad 161 and the second input pad 162 can be connected to the same current, but not limited thereto. The area of ​​the first input pad 161 and the area of ​​the second input pad 162 can be the same, but not limited thereto.

[0116] Compared with the first input pad 161, the second input pad 162 is closer to the first conductive pad 14. Therefore, in the single-drive mode, compared with the first input pad 161 as the input end, the second input pad 162 as the input end has a shorter current path, so that the current does not need to flow completely through the entire multi-quantum well portion 131, that is, the local area of ​​the multi-quantum well portion 131 is not utilized, which reduces the effective area of ​​the multi-quantum well portion 131, so that the light-emitting diode device 100 has a higher effective current density, thereby improving the WPE and EQE effects.

[0117] Compared with the single drive mode, in the dual drive mode, under the same total current, the first input pad 161 and the second input pad 162 are both connected to the current, the current distribution area becomes larger, the current distribution is more uniform, and the utilization rate of the multi-quantum well portion 131 area is higher, that is, the multi-quantum well portion 131 has a larger effective area. Therefore, under the same total current, the effective current density of the dual drive mode is smaller.

[0118] Of course, in some other implementations, the current density can also be adjusted by adjusting the total current, for example, the first input pad 161 is constantly connected to the first current, and the second input pad 162 is constantly connected to the second current. Then in the single-drive mode, only the first current or the second current is connected; in the dual-drive mode, the first current and the second current are connected at the same time. Compared with the single-drive mode, the total current in the dual-drive mode is larger and the current density is larger.

[0119] Optionally, in some embodiments of the present application, in a first direction F1 parallel to a side of the substrate 11 and / or the first current spreading layer 12 , the sum of the lengths of all the conductive portions 151 is smaller than the length of the multi-quantum well portion 131 .

[0120] That is, by shortening the total length of the conductive portion 151 , the area of ​​the conductive portion 151 can be shortened, thereby increasing the effective current density of the multi-quantum well portion 131 .

[0121] Optionally, in some embodiments of the present application, in the first direction F1 , the sum of the lengths of all the conductive portions 151 is less than 2 / 3 of the length of the substrate 11 .

[0122] It is understandable that the ratio of the length of the second current spreading layer of the existing light-emitting diode to the length of the light-emitting diode is generally 2 / 3. Therefore, the light-emitting diode device 100 of the embodiment of the present application reduces the length ratio of the conductive part 151 to reduce the area of ​​the conductive part 151 and thereby increase the effective current density of the multi-quantum well part 131.

[0123] Please refer to Fig. 9 , Fig. 9FIG. 1 shows a light emitting diode device 100 according to one or more embodiments disclosed in the present application. Fig. 9 In the present invention, parts different from any of the above embodiments will be described to avoid redundant description.

[0124] In the light emitting diode device 100, a first current spreading layer 12 is disposed on a substrate 11. An active layer 13 is disposed on a side of the first current spreading layer 12 away from the substrate 11, and the active layer 13 includes at least one multi-quantum well portion 131. A first conductive pad 14 is disposed on a side of the first current spreading layer 12 away from the substrate 11 and on a side of the active layer 13. A second current spreading layer 15 is disposed on a side of the active layer 13 away from the substrate 11. The second current spreading layer 15 includes at least one conductive portion 151. At least two second conductive pads 16 are disposed on a side of the second current spreading layer 15 away from the substrate 11.

[0125] It is understandable that the light-emitting diode device 100 of one or more embodiments disclosed in the present application adopts multiple driving modes to drive the light-emitting diode device 100, so that different driving modes can be selected according to different current density requirements to match the optimal WPE efficiency of the light-emitting diode device 100.

[0126] exist Fig. 9 In the embodiment, the entire active layer 13 is a quantum well layer, that is, a single multi-quantum well portion 131 is the entire active layer 13. The entire second current spreading layer 15 is a conductive layer, that is, a single conductive portion 151 is the entire second current spreading layer 15.

[0127] That is to say, the optimal WPE effect of the light emitting diode device 100 can be achieved by simply selecting a corresponding driving mode without reducing the area of ​​the multi-quantum well portion 131 and the area of ​​the conductive portion 151 .

[0128] Optionally, in some embodiments, in an orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, one of the orthographic projection of the at least one multi-quantum well portion 131 and the orthographic projection of the at least one conductive portion 151 is within the other, and the orthographic projection area of ​​the at least one multi-quantum well portion 131 and the orthographic projection area of ​​the at least one conductive portion 151 are not the same.

[0129] It should be noted that the WPE effect can be improved by reducing the area of ​​the multi-quantum well portion 131 or the area of ​​the conductive portion 151 .

[0130] Optionally, in some embodiments of the present application, the active layer 13 includes a first insulating portion 132 and at least two multi-quantum well portions 131, the first insulating portion 132 is arranged between two adjacent multi-quantum well portions 131, each multi-quantum well portion 131 corresponds to a second conductive pad 16, and at least two second conductive pads 16 are connected and arranged on the conductive portion 151.

[0131] In an orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, the orthographic projections of at least two multi-quantum well portions 131 are within the orthographic projection of a conductive portion 151 , and the sum of the orthographic projection areas of at least two multi-quantum well portions 131 is smaller than the orthographic projection area of ​​the conductive portion 151 .

[0132] It should be noted that the above technical solution Figure 5 The corresponding implementation of the light emitting diode device 100 is similar or the same, please refer to Figure 5 The description of the implementation of the corresponding light emitting diode device 100 will not be repeated here.

[0133] Optionally, in some embodiments of the present application, the second current spreading layer 15 further includes a second insulating portion 152 and at least two conductive portions 151. The second insulating portion 152 is located between two adjacent conductive portions 151. The conductive portion 151 and the second insulating portion 152 are disposed on the multi-quantum well portion 131, and each conductive portion 151 is connected to a second conductive pad 16.

[0134] In the orthographic projection based on the plane where the substrate 11 is located, the orthographic projections of at least two conductive portions 151 are within the orthographic projection of a multi-quantum well portion 131 , and the sum of the orthographic projection areas of at least two conductive portions 151 is smaller than the orthographic projection area of ​​the multi-quantum well portion 131 .

[0135] It should be noted that the above technical solution Figure 8 The corresponding implementation of the light emitting diode device 100 is similar or the same, please refer to Figure 8 The description of the implementation of the corresponding light emitting diode device 100 will not be repeated here.

[0136] Please refer to Fig.10 , Fig.10 The display panel 1000 includes the light emitting diode device 100 according to any one of the above embodiments.

[0137] The embodiment of the present application further provides a display panel 1000 , which includes a driving substrate 200 and a light emitting diode device 100 as described in any one of the above embodiments, wherein the light emitting diode device 100 is disposed on the driving substrate 200 .

[0138] The display panel 1000 further includes a plurality of lenses 300 , and one lens 300 is correspondingly disposed at the light emitting side of one light emitting diode device 100 .

[0139] It should be noted that the structure of the light emitting diode device 100 of the display panel 1000 of the embodiment of the present application is similar to or the same as the structure of the light emitting diode device 100 of any of the above embodiments, so it will not be described in detail here.

[0140] Optionally, the light emitting diode device 100 of the display panel 1000 may include a substrate 11 or may not include a substrate 11 .

[0141] It is understandable that the lens 300 has a light-condensing effect, and can improve the light-emitting efficiency of the light-emitting diode device 100 .

[0142] Optionally, the lens 300 completely covers the light emitting diode device 100 .

[0143] In some embodiments of the present application, the display panel 1000 may further include an encapsulation layer 400, and the encapsulation layer 400 encapsulates a plurality of light emitting diode devices 100. The lens 300 is disposed on a side of the encapsulation layer 400 away from the light emitting diode device 100.

[0144] Please refer to Fig.11 , Fig.11 The embodiment corresponding to the lens 300 of smaller size is shown. Fig.11 In this paper, we will explain Fig.10 The different parts of the corresponding embodiments are described to avoid redundant explanation.

[0145] Optionally, in some embodiments of the present application, in a top plan view of the display panel 1000 , the lens 300 completely covers the active layer 13 and is located outside the first conducting pad 14 .

[0146] The display panel 1000 of the embodiment of the present application reduces the diameter of the lens 300 and the thickness of the lens 300, so as to adopt a yellow light process to replace the stamping or film lamination process, thereby maintaining the alignment accuracy and reducing the process cost.

[0147] In addition, since the lens 300 completely covers the light emitting diode device 100, the diameter of the lens 300 is relatively large, which causes the center line of the lens 300 and the center line of the active layer 13 to be offset. Fig.11 The corresponding implementation adopts a lens 300 with a smaller aperture, which only needs to cover the active layer 13, so that the center line of the lens 300 coincides with the center line of the active layer 13, thereby improving the symmetry of the light output.

[0148] The above is a detailed introduction to a light-emitting diode device and a display panel provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technicians in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A light emitting diode device, characterized in that: include: a first current spreading layer; An active layer, disposed on the first current spreading layer, the active layer comprising at least one multi-quantum well portion; A first conductive pad, disposed on the first current spreading layer and located on one side of the active layer; A second current spreading layer, disposed on a side of the active layer away from the first current spreading layer, the second current spreading layer comprising at least one conductive portion; as well as A second conductive pad is arranged on a side of the second current spreading layer away from the first current spreading layer; Among them, in the orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the at least one multi-quantum well portion and the orthographic projection of the at least one conductive portion at least partially overlap, and the orthographic projection area of ​​the at least one multi-quantum well portion is different from the orthographic projection area of ​​the at least one conductive portion.

2. The light emitting diode device according to claim 1, characterized in that: In an orthographic projection based on a plane where the first current spreading layer is located, one of an orthographic projection of the at least one multi-quantum well portion and an orthographic projection of the at least one conductive portion is within the other.

3. The light emitting diode device according to claim 2, characterized in that: In an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the at least one multi-quantum well portion is within the orthographic projection of the conductive portion, and the orthographic projection area of ​​the at least one multi-quantum well portion is smaller than the orthographic projection area of ​​the conductive portion; The active layer further includes a first insulating portion, the first insulating portion is located on at least one side of the multi-quantum well portion, and the conductive portion covers the multi-quantum well portion and the first insulating portion.

4. The light emitting diode device according to claim 3, characterized in that: In a first direction parallel to a side of the first current spreading layer, a length of the multi-quantum well portion is smaller than a length of the conductive portion.

5. The light emitting diode device according to claim 3 or 4, characterized in that: The number of the multi-quantum well portion is one, the number of the second conductive pad is one, and in an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the multi-quantum well portion at least partially overlaps with the orthographic projection of the second conductive pad.

6. The light emitting diode device according to claim 3 or 4, characterized in that: The number of the multi-quantum well sections is at least two, the first insulating section is arranged between two adjacent multi-quantum well sections, each of the multi-quantum well sections corresponds to one second conductive pad, and at least two second conductive pads are connected and arranged on the conductive section.

7. The light emitting diode device according to claim 2, characterized in that: In an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the at least one conductive portion is within the orthographic projection of the multi-quantum well portion, and the orthographic projection area of ​​the at least one conductive portion is smaller than the orthographic projection area of ​​the multi-quantum well portion; The second current spreading layer further includes a second insulating portion, the second insulating portion is located on at least one side of the conductive portion, and the conductive portion and the second insulating portion are disposed on the multi-quantum well portion.

8. The light emitting diode device according to claim 7, characterized in that: In a first direction parallel to a side of the first current spreading layer, a length of the conductive portion is smaller than a length of the multi-quantum well portion.

9. The light emitting diode device according to claim 7 or 8, characterized in that: The number of the conductive portion is one, the number of the second conductive pad is one, and in an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the multi-quantum well portion at least partially overlaps with the orthographic projection of the second conductive pad.

10. The light emitting diode device according to claim 7 or 8, characterized in that: The number of the conductive parts is at least two, the second insulating part is arranged between two adjacent conductive parts, and each conductive part is connected to a second conductive pad.

11. A light emitting diode device, characterized in that: include: a first current spreading layer; An active layer, disposed on the first current spreading layer; A first conductive pad, disposed on the first current spreading layer and located on one side of the active layer; A second current spreading layer is arranged on a side of the active layer away from the first current spreading layer; as well as At least two second conductive pads are disposed on a side of the second current spreading layer away from the first current spreading layer.

12. The light emitting diode device according to claim 11, characterized in that: The active layer includes at least one multi-quantum well portion, and the second current spreading layer includes at least one conductive portion; In which, in the orthographic projection based on the plane where the first current spreading layer is located, one of the orthographic projection of the at least one multi-quantum well portion and the orthographic projection of the at least one conductive portion is within the other, and the orthographic projection area of ​​the at least one multi-quantum well portion is different from the orthographic projection area of ​​the at least one conductive portion.

13. The light emitting diode device according to claim 12, characterized in that: The active layer includes a first insulating portion and at least two multi-quantum well portions, the first insulating portion is disposed between two adjacent multi-quantum well portions, each multi-quantum well portion corresponds to one second conductive pad, and at least two second conductive pads are connected and disposed on the conductive portion; In an orthographic projection based on the plane where the first current spreading layer is located, the orthographic projections of at least two of the multi-quantum well portions are within the orthographic projection of one of the conductive portions, and the sum of the orthographic projection areas of at least two of the multi-quantum well portions is smaller than the orthographic projection area of ​​the conductive portion.

14. The light emitting diode device according to claim 12, characterized in that: The second current spreading layer further comprises a second insulating portion and at least two conductive portions, the second insulating portion is located between two adjacent conductive portions, the conductive portion and the second insulating portion are arranged on the multi-quantum well portion, and each conductive portion is connected to a second conductive pad; In an orthographic projection based on the plane where the first current spreading layer is located, orthographic projections of at least two of the conductive portions are within an orthographic projection of a multi-quantum well portion, and a sum of orthographic projection areas of at least two of the conductive portions is smaller than an orthographic projection area of ​​the multi-quantum well portion.

15. A display panel, characterized in that: comprising a driving substrate and a light emitting diode device according to any one of claims 1 to 14, wherein the light emitting diode device is arranged on the driving substrate; Wherein, the display panel further comprises a plurality of lenses, and one of the lenses is correspondingly arranged at the light emitting side of one of the light emitting diode devices.

16. The display panel according to claim 15, characterized in that: In a top plan view of the display panel, the lens completely covers the active layer and is located outside the first conducting pad.

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