Super-dense processor with embedded microfluidic cooling

Abstract

The processing unit includes a first die and a second die with a microfluidic volume therebetween. At least one heat transfer structure couples the first die to the second die and is located in the microfluidic volume. An electrochemical fluid is positioned in the microfluidic volume to provide electrochemical energy to at least one of the first die and the second die and to receive heat from the first die and the second die.

Description

Background Art

[0001] Conventional processing units are powered and cooled by separate power and cooling systems.As the density of computing resources, such as in server configurations and / or in data centers, increases, the available space for power delivery and heat removal decreases. Summary of the invention

[0002] In some embodiments, the processing unit includes a first die and a second die with a microfluidic volume between the first die and the second die. At least one heat transfer structure couples the first die to the second die and is located in the microfluidic volume. The electrochemical fluid is positioned in the microfluidic volume to provide electrochemical energy to at least one of the first die and the second die and receive heat from the first die and the second die.

[0003] In some embodiments, a computing system includes a first wafer, a second wafer, and a manifold. The first wafer includes a first die and a second die, with a first microfluidic volume between the first die and the second die. A first plurality of heat transfer structures couple the first die to the second die and are located in the first microfluidic volume. The second wafer includes a third die and a fourth die, with a second microfluidic volume between the third die and the fourth die. A second plurality of heat transfer structures couple the third die to the fourth die and are located in the second microfluidic volume. The manifold is configured to flow an electrochemical fluid through the first microfluidic volume and the second microfluidic volume. The electrochemical fluid is configured to provide power to the first die and the second die and receive heat from the first plurality of heat transfer structures and the second plurality of heat transfer structures.

[0004] In some embodiments, a method of providing power and cooling to a stacked die processor includes providing an electrochemical fluid to a microfluidic volume of the stacked die processor, generating power at the stacked die processor using the electrochemical fluid, receiving heat from the stacked die processor using the electrochemical fluid in the microfluidic volume, and removing heat from the electrochemical fluid at a heat exchanger.

[0005] This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter.

[0006] Additional features and advantages will be set forth in the following description, and in part will be apparent from the description, or may be learned through practice of the teachings herein. Features and advantages of the present disclosure may be realized and obtained through the instruments and combinations specifically pointed out in the appended claims. Features of the present disclosure may become more fully apparent from the following description and the appended claims, or may be learned through practice of the present disclosure as described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to describe the manner in which the above-described and other features of the present disclosure can be obtained, a more particular description will be rendered by reference to specific embodiments thereof shown in the accompanying drawings. For better understanding, similar elements are designated by similar reference numerals throughout the various drawings. Although some of the drawings may be schematic or exaggerated representations of concepts, at least some of the drawings may be drawn to scale. Understanding that the drawings depict some example embodiments, the embodiments will be described and explained with additional specificity and detail through the use of the drawings, in which:

[0008] Figure 1-1 is a schematic diagram of an electrochemical system according to at least some embodiments of the present disclosure;

[0009] Figure 1-2 A device having a charging device according to at least some embodiments of the present disclosure Figure 1-1 Schematic diagram of the electrochemical system;

[0010] Figure 2 is a cross-sectional side view of a processing unit with electrochemical generation according to at least some embodiments of the present disclosure;

[0011] Figure 3-1 is a top view of a processing unit having a plurality of fluid channels in a microfluidic volume according to at least some embodiments of the present disclosure;

[0012] Figure 3-2 yes Figure 3-1 A side view of a processing unit;

[0013] Figure 4 is a side view of a processing unit having electrochemical fluids in a plurality of microfluidic volumes according to at least some embodiments of the present disclosure;

[0014] Figure 5 is a side view of a processing unit having an ion transfer membrane in a microfluidic volume according to at least some embodiments of the present disclosure;

[0015] Figure 6 is a system diagram of an electrochemical system having a heat exchanger according to at least some embodiments of the present disclosure;

[0016] Figure 7 is a system diagram of a server stack with on-chip power generation and cooling according to at least some embodiments of the present disclosure;

[0017] Figure 8 is a detailed view of a manifold and processing units of a server stack according to at least some embodiments of the present disclosure; and

[0018] Fig. 9is a flow chart illustrating a method for combined power delivery and thermal management for a stacked die processor in accordance with at least some embodiments of the present disclosure. DETAILED DESCRIPTION

[0019] The present disclosure generally relates to systems and methods for providing power and thermal management to a processor. More specifically, the present disclosure relates to power generation using an electrochemical fluid in a microfluidic volume between the tube cores of a stacked tube core processor, wherein heat is discharged from the microfluidic volume by the electrochemical fluid. The microfluidic volume is the volume between the tube cores of a stacked tube core or a three-dimensional processor, which allows fluid to flow through a processor adjacent to or in contact with one or more tube cores in the tube core. In some embodiments, at least a portion of an electrochemical flow battery and / or a generator is located in a microfluidic volume between a first tube core and a second tube core of the processor. For example, an electrochemical fluid such as an anolyte or a catholyte flows into the microfluidic volume so that a voltage and a current are generated from the electrochemical fluid at the first tube core and / or the second tube core to power the processor or other components of the stacked tube core processor through electrodes connected thereto. The electrochemical fluid receives heat from the first tube core and / or the second tube core, and the electrochemical fluid flows out of the microfluidic volume to discharge heat from the processor.

[0020] In some embodiments, a heat generating component according to the present disclosure includes a die. The die may be a general purpose device such as a central processing unit (CPU) or a graphics processing unit (GPU), a special purpose device application specific integrated circuit (ASIC), a memory module (such as a cache memory, a volatile memory, or a non-volatile memory), or other electronic or processing components. The die generates heat during use.

[0021] In a conventional processor, the die is connected to a printed circuit board (PCB), which delivers power to the die via one or more wire traces. The delivery of power through the wire traces may be inefficient from an electrical perspective and / or a design space perspective. In addition, typically, the heat generated by the processor is transferred to a heat sink through a thermal interface material (TIM), which contacts a heat sink or other interface to discharge the heat to a liquid coolant or ambient atmosphere. In some cases, thermal management components and interfaces can limit the amount of heat that is discharged. In the case of a stacked die processor, conventional thermal management may not be able to cool all of the die in the processor.

[0022] In some embodiments, a stacked die processor includes at least a first die and a second die with a pin heat sink or other heat transfer structure stacked therebetween. In some embodiments, the heat transfer structure includes a through silicon via (TSV) to electrically connect the first die and the second die. In some examples, a first microfluidic volume is located between the first die and the second die, and a first set of pin heat sinks couples the first die and the second die through the first microfluidic volume. In some embodiments, a second microfluidic volume is located between the second die and the third die, and a second set of pin heat sinks couples the second die and the third die through the second microfluidic volume.

[0023] In some embodiments, an electrochemical fluid (e.g., a vanadium salt) positioned in a microfluidic volume allows each die to receive power directly from the electrochemical fluid. On-chip power generation of the electrochemical fluid can limit and / or eliminate the need for power delivery to TSVs. In at least one embodiment, data communication between the die of a processor can be increased by limiting and / or eliminating the need for power delivery to TSVs, providing additional space to the TSVs between the logic units of the die. In addition, direct power delivery and / or thermal management of the electrochemical fluid can allow for more efficient power delivery and / or thermal management.

[0024] In some embodiments, the electrochemical fluid is pushed through the first microfluidic volume and through the second microfluidic volume at the same flow rate. For example, a manifold forming at least a portion of the sidewalls of the microfluidic volume can be connected to an inlet conduit that can provide equal flow rates and / or equal fluid pressures to both the first microfluidic volume and the second microfluidic volume. In some embodiments, the flow rates are different, such as when different portions of the stacked die processor require different thermal management or power delivery. For example, a first inlet conduit can provide a first flow rate and / or fluid pressure to the first microfluidic volume, and a second inlet conduit can provide a second flow rate and / or fluid pressure to the second microfluidic volume.

[0025] Although some embodiments described herein have multiple dies of the same area, in other embodiments, at least one die of the stacked die processor has a different shape or area from another die in the stacked die processor. In some embodiments, the stacked die processor includes dies of different sizes. In one example, the first die and the second die (e.g., CPU and GPU) have substantially the same area, while the third die (e.g., memory) has a different area. In some embodiments, different dies may have the same in-plane aspect ratio and have different areas, such as two squares of different sizes. In some embodiments, different dies may have different in-plane aspect ratios and have the same area, such as two rectangles rotated 90° relative to each other. In some embodiments, different dies may have different areas but share at least one dimension of their area, such as the second die and the third die have different lengths in the flow direction but have equal widths perpendicular to the flow direction. In another example, the first die and the second die may have equal lengths in the flow direction, but have different widths perpendicular to the flow direction.

[0026] Different sized dies may have different thermal management requirements associated with a given power delivery. In some embodiments, a first set of heat transfer structures and a second set of heat transfer structures have different heat transfer surface features (HTSFs) thereon. For example, a first set of heat transfer structures may have a HTSF thereon, and a second set of heat transfer structures may lack a HTSF thereon or have a different HTSF thereon. In other examples, a first set of heat transfer structures may have a plurality of recesses in its surface, and a second set of heat transfer structures may lack recesses in its surface or have recesses of a different pattern or different sizes. In other examples, a first set of heat transfer structures may have a plurality of protrusions on its surface, and a second set of heat transfer structures may lack protrusions on its surface or have protrusions of a different pattern or different sizes. In some embodiments, the thermal management requirements of the dies may be different, and the HTSFs of the first set of heat transfer structures and the second set of heat transfer structures may be different to achieve different thermal management characteristics.

[0027] In some embodiments, power delivery and thermal management combined by electrochemical fluids in microfluidic volumes according to the present disclosure allow for increased density of processors in computing devices, server blades, server racks, or data centers. For example, on-chip power delivery and cooling can allow for dense stacking of wafers with stacked die processors, which is not possible with conventional PCB power delivery and separate thermal management.

[0028] 1 is a schematic diagram of an electrochemical generation system 100 that provides power to an electrical load 102 (e.g., a processor) or from a power source. In some embodiments, the electrochemical generation system 100 includes an electrochemical chamber 104 having an ion transfer membrane 106 that divides the electrochemical chamber 104. The electrochemical chamber 104 includes a first electrochemical fluid 108 and a second electrochemical fluid 110 separated by the ion transfer membrane 106. In some embodiments, the transfer of ions across the ion transfer membrane 106 between the first electrochemical fluid 108 and the second electrochemical fluid 110 generates a voltage and current to the processor or other electrical load 102 and discharges the first electrochemical fluid 108. In some embodiments, an applied voltage from a power source (instead of an electrical load) causes a reverse transfer of ions across the ion transfer membrane 106, which charges the first electrochemical fluid 108.

[0029] In some embodiments, electrochemical chamber 104 is in fluid communication with first storage tank 112 and second storage tank 114. For example, first electrochemical fluid 108 is stored in first storage tank 112 and can flow into electrochemical chamber 104, and second electrochemical fluid 110 is stored in second storage tank 114 and can flow into electrochemical chamber 104. First pump 116 and second pump 118 can control the flow of first electrochemical fluid 108 and second electrochemical fluid 110, respectively, to electrochemical chamber 104. In some embodiments, the rate of ion transfer across ion transfer membrane 106 is at least partially related to the flow rate of first electrochemical fluid 108 and second electrochemical fluid 110 into electrochemical chamber 104 (and in contact with ion transfer membrane 106).

[0030] The charge generated by the transfer of ions across the ion transfer membrane 106 can be collected at a first electrode 120 and a second electrode 122 in or on the electrochemical chamber 104 positioned on opposite sides of the ion transfer membrane 106. For example, the first electrode 120 is in contact with the first electrochemical fluid 108, and the second electrode 122 is in contact with the second electrochemical fluid 110. The electrodes 120, 122 collect charge from the first electrochemical fluid 108 and the second electrochemical fluid 110. In some embodiments, the first electrochemical fluid 108 is an anolyte fluid, and the second electrochemical fluid 110 is a catholyte fluid. In some embodiments, the anolyte fluid and the catholyte fluid are the same fluid or compound in different states of charge. In at least one embodiment, the anolyte fluid and the catholyte fluid are or include a vanadium salt.

[0031] Figure 1-2 yes Figure 1-1Schematic diagram of an electrochemical generator system 100 having a processor 124 as an electrical load and a separate power source 126 connected to a second electrochemical chamber 128. In some embodiments, the electrochemical generator system 100 includes a first electrochemical chamber 104 configured to discharge an electrochemical fluid and provide power to the electrical load (e.g., the processor 124), and the electrochemical generator system 100 includes a second electrochemical chamber 128 configured to receive power from a power source 126 (e.g., a grid or other power source) to recharge the electrochemical fluids 108, 110.

[0032] In some embodiments, the electrochemical fluids 108, 110 are substantially continuously circulated through the electrochemical generator system 100, receiving power from the power source 126 and delivering the power to the electrical load. In some embodiments, while the pumps 116, 118 flow the electrochemical fluids 108, 110, the electrochemical fluids 108, 110 are stored in the storage tanks 112, 114 until power similar to a battery is needed. Figure 1-1 As described, the first electrochemical fluid 108 and the second electrochemical fluid 110 exchange ions across the first ion transfer membrane 106 in the first electrochemical chamber 104 to discharge the first electrochemical fluid 108 and generate electricity. The first electrochemical fluid 108 and the second electrochemical fluid 110 exchange ions across the second ion transfer membrane 130 in the second electrochemical chamber 128 to charge the first electrochemical fluid 108 and store electricity.

[0033] In some embodiments, at least a portion of the electrochemical chamber configured to provide power is located in a microfluidic volume between the dies on the stacked die processor. For example, a first electrochemical fluid can be positioned in the microfluidic volume. In another example, a second electrochemical fluid can be positioned in the microfluidic volume. In yet another example, both the first electrochemical fluid and the second electrochemical fluid can be positioned in the microfluidic volume.

[0034] Figure 22 is a side cross-sectional view of a processor 224 having a first die 232 and a second die 234 with a microfluidic volume 236 positioned therebetween. In some embodiments, the minimum distance between the first die 232 and the second die 234 can be less than 100 microns. In some embodiments, the minimum distance between the first die 232 and the second die 234 can be less than 200 microns. In some embodiments, the minimum distance between the first die 232 and the second die 234 can be less than 300 microns. In some embodiments, the distance between the first die 232 and the second die 234 across the microfluidic volume 236 is substantially constant. For example, the surfaces of the first die 232 and the second die 234 adjacent to each other can be substantially planar and parallel. In other embodiments, at least a portion of the surfaces of the first die 232 and the second die 234 adjacent to each other are non-planar, and the minimum distance between the first die 232 and the second die 234 is defined by the position on the surfaces of the first die 232 and the second die 234 closest to each other.

[0035] In some embodiments, the microfluidic volume 236 of the processor 224 is part of the electrochemical chamber 204, which is configured to provide power through the discharge of the first electrochemical fluid 208 to the second electrochemical fluid 210. For example, the transfer of ions across the ion transfer membrane 206 can generate an electric potential between the first electrode(s) 220 and the second electrode(s) 222. In at least one example, the first electrochemical fluid 208 is positioned in the microfluidic volume 236 on a first side of the second die 234, and the second electrochemical fluid 210 is positioned on a second side of the second die 234, and the ion transfer membrane 206 is positioned between the first electrochemical fluid 208 and the second electrochemical fluid 210. The second die 234 can be positioned between the first electrode 220 and the second electrode 222 to receive power. For example, first electrochemical fluid 208 may be an anolyte and second electrochemical fluid 210 may be a catholyte such that second die 234 (and its circuitry) is positioned as an electrical load between first electrode 220 in contact with the anolyte and second electrode 222 in contact with the catholyte.

[0036] In some embodiments, the processor 224 is connected to a conventional PCB 238. In some embodiments, the processor 224 is integrally formed with a silicon wafer. For example, the first die 232 can be integrally formed with a silicon wafer. The first die 232 and the second die 234 separated by the microfluidic volume 236 can be connected by one or more heat transfer structures 240 positioned between the first die 232 and the second die 234. In some embodiments, the heat transfer structure 240 is configured to transfer heat from the first die 232 and / or the second die 234 to the first electrochemical fluid 208 and / or the second electrochemical fluid 210 positioned in the microfluidic volume 236.

[0037] While some processors according to the present invention have a first electrochemical fluid positioned in a microfluidic volume and a second electrochemical fluid positioned outside the microfluidic volume, other embodiments of the processor have the first electrochemical fluid and the second electrochemical fluid positioned in the microfluidic volume. For example, an ion transfer membrane is positioned in the microfluidic volume to separate the first electrochemical fluid and the second electrochemical fluid. In at least one embodiment, the ion transfer membrane is a heat transfer structure that allows ions to move through the membrane and be heated by the membrane.

[0038] Figure 3-1 3 is a top view of an embodiment of a processor 324 having a plurality of heat transfer structures 340 positioned between a first die 332 and a second die 334 (the second die 334 being located at Figure 3-1 In some embodiments, at least one heat transfer structure 340 is also an ion transfer membrane. In some embodiments, in addition to the heat transfer structure 340, at least one ion transfer membrane 306 is located in the microfluidic volume. For example, the heat transfer structure 340 and the (multiple) ion transfer membranes 306 can divide the microfluidic volume 336 into a plurality of channels 342-1, 342-2. In some embodiments, at least some adjacent channels 342-1, 342-2 have a first electrochemical fluid 308 therein and a second electrochemical fluid 310 therein to allow ions to transfer through the ion transfer membrane 306.

[0039] exist Figure 3-1 In the embodiment of the present invention, the heat transfer structure 340 is a flat heat sink that defines two electrochemical chambers adjacent to each other, each electrochemical chamber is divided by an ion transport membrane 306 positioned therein to create a first channel 342-1 and a second channel 342-2 in each electrochemical chamber 304. In some embodiments, the electrochemical chambers 304 allow the flow of a first electrochemical fluid 308 in the first channel 342-1 and a second electrochemical fluid 310 in the second channel 342-2. In other examples, at least a portion of the heat transfer structure 340 can be curved or have a curved portion. For example, a first heat transfer structure 340 can be curved relative to another heat transfer structure 340 so that the cross-sectional area of ​​the channels 342-1, 342-2 changes along the flow direction of the electrochemical fluid. In at least one embodiment, the cross-sectional area of ​​the channels 342-1, 342-2 increases in the flow direction to reduce the speed of the electrochemical fluid passing through the channels 342-1, 342-2. In at least one embodiment, the cross-sectional area of ​​the channels 342-1, 342-2 decreases along the flow direction to increase the velocity of the electrochemical fluid passing through the channels 342-1, 342-2.

[0040] Figure 3-2 Shows Figure 3-1 The processor 324 of the embodiment of the present invention is a cross-sectional view of the line A-A' of the electrochemical chamber 304. The first electrochemical fluid 308 in the first channel 342-1 separated from the second electrochemical fluid 310 in the second channel 342-2 by the ion transfer membrane 306 generates an electric potential between the (multiple) first electrodes 320 positioned in the first channel 342-1 and the (multiple) second electrodes 322 positioned in the second channel 342-2. In some embodiments, the first die 332 and the second die 334 both have electrodes 320, 322 positioned in contact with one or more of the first electrochemical fluid 308 and the second electrochemical fluid 310. Therefore, the first die 332 and the second die 334 can both receive power from the electrochemical fluids 308, 310, and the electrochemical fluids 308, 310 receive heat from the first die 332 and the second die 334 to remove heat therefrom. In some embodiments, the heat transfer structure 340 also transfers heat to the electrochemical fluids 308, 310. In some embodiments, at least one ion transport membrane 306 is a heat transfer structure 340 .

[0041] Figure 4 434 and the third die 444. In some embodiments, the first microfluidic volume 436 is located between the first die 432 and the second die 434, and the second microfluidic volume 446 is located between the second die 434 and the third die 444. In some embodiments, the first electrochemical fluid 408 is located in the first microfluidic volume 436, and the second electrochemical fluid 410 is located in the second microfluidic volume 446. The first microfluidic volume 436 and the second microfluidic volume 446 form at least a portion of the electrochemical chamber 404 divided by the second die 434 and the ion transfer membrane 406. In some embodiments, the first electrode 420 and the second electrode 422 contacting the first electrochemical fluid 408 and the second electrochemical fluid 410, respectively, allow the electrochemical chamber 404 to provide power to at least the second die 434. In some embodiments, one or more TSVs 448 in the heat transfer structure 440 or other structure between the second die 434 and the first die 432 and / or the third die 444 may transfer power from the electrodes 420 , 422 to different portions of the processor 424 .

[0042] In some embodiments, the flow directions of the first electrochemical fluid 408 and the second electrochemical fluid 410 are oriented in the same direction relative to the processor 424. In some embodiments, the flow directions of the first electrochemical fluid 408 and the second electrochemical fluid 410 are oriented in different directions relative to the processor 424. For example, Figure 4The flow direction of the first electrochemical fluid 408 is shown opposite to the flow direction of the second electrochemical fluid 410 relative to the processor 424. In some examples, having the flow directions opposite to each other can allow the first electrochemical fluid 408 and the second electrochemical fluid 410 to more effectively receive heat from the dies 432, 434, 444 and / or the heat transfer structure 440 of the stacked die processor 424 and cool the stacked die processor 424.

[0043] Figure 5 5 is a side view of an embodiment of a stacked die processor having an ion transfer membrane 506 located in a microfluidic volume and coplanar with a first die 532 and a second die 534. In some embodiments, a microfluidic volume 536 between the first die 532 and the second die 534 defines at least a portion of the electrochemical chamber 504. The ion transfer membrane 506 divides the microfluidic volume 536 and separates the first electrochemical fluid 508 from the second electrochemical fluid 510. In some embodiments, the electrode ( Figure 5 The first die 532 and the second die 534 may conduct electricity therebetween.

[0044] Figure 6 6 is a schematic diagram of an embodiment of an electrochemical generator system 600 including a heat exchanger 650. In some embodiments, the electrochemical generator system 600 includes a first electrochemical chamber 604 configured to discharge an electrochemical fluid and provide power to an electrical load (e.g., a processor 624), and the electrochemical generator system 600 includes a second electrochemical chamber 628 configured to receive power from a power source 626 (e.g., a grid or other power source) to recharge the electrochemical fluids 608, 610.

[0045] In some embodiments, the electrochemical fluids 608, 610 are substantially continuously circulated through the electrochemical generator system 600, receiving power from the power source 626 and delivering power to the electrical load. In some embodiments, when the pumps 616, 618 flow the electrochemical fluids 608, 610, the electrochemical fluids are stored in the storage tanks 612, 614 until power similar to a battery is needed. The first electrochemical fluid 608 and the second electrochemical fluid 610 exchange ions through the first ion transfer membrane 606 in the first electrochemical chamber 604 to discharge the first electrochemical fluid 608 and generate electricity. The first electrochemical fluid 608 and the second electrochemical fluid 610 exchange ions through the second ion transfer membrane 630 in the second electrochemical chamber 628 to charge the first electrochemical fluid 608 and store electricity.

[0046] In some embodiments, at least a portion of an electrochemical chamber configured to provide power is located in a microfluidic volume between dies on a stacked die processor, as described with respect to Figure 3-1 to Figure 5 As shown and described in any of the figures of . For example, the first electrochemical fluid can be positioned in the microfluidic volume. In another example, the second electrochemical fluid can be positioned in the microfluidic volume. In yet another example, the first electrochemical fluid and the second electrochemical fluid can both be positioned in the microfluidic volume.

[0047] The first electrochemical fluid 608 and the second electrochemical fluid 610 may receive heat from the stacked die processor 624 or other heat generating components of the electrochemical generator system 600. The first electrochemical fluid 608 and the second electrochemical fluid 610 may flow from the stacked die processor 624 (e.g., a microfluidic volume of the stacked die processor 624) or other heat generating components to the heat exchanger 650 and remove at least a portion of the heat from the first electrochemical fluid 608 and the second electrochemical fluid 610. Thus, the first electrochemical fluid 608 and the second electrochemical fluid 610 may directly provide power to the processor 624 and remove heat from the processor 624 in a single medium passing through the microfluidic volume of the processor 624.

[0048] In some embodiments, combined power delivery and cooling in the microfluidic volume of a stacked die processor allows for increased density of processors. For example, Figure 7 is a side cross-sectional view of an embodiment of a server stack 752 having electrochemical power generation and cooling in a microfluidic volume 736 of a processor 724. The server stack 752 includes a plurality of wafers 760 having stacked die processors 724 thereon. For example, the stacked die processors 724 may be integrally formed with the wafers 760, wherein the microfluidic volumes 736 in the stacked die processors 724 are formed in the material of the wafer 760 (e.g., silicon).

[0049] In some embodiments, the microfluidic volume 736 receives one or more electrochemical fluids from a manifold 754 or other delivery element of a server stack 752, which directs the charged electrochemical fluid to the stacked die processor to provide power as described in any embodiment described herein. The (multiple) electrochemical fluids are discharged at the stacked die processor 724 to provide power and receive heat from the stacked die processor 724. The discharged hot electrochemical fluid flows to a charging device 758 through a return conduit 756 to recharge the electrochemical fluid with energy from the power source 726. In some embodiments, the charging device 758 includes a heat exchanger 750 to discharge heat from the electrochemical fluid. In some embodiments, the heat exchanger 750 discharges heat from the electrochemical fluid to the ambient atmosphere. In some embodiments, the heat exchanger 750 discharges heat from the electrochemical fluid to another cooling fluid, such as in a secondary liquid cooling system.

[0050] Figure 8 is a side view of an embodiment of a manifold 854 configured to deliver electrochemical fluid to portions of a server stack, such as Figure 7 860-1, 860-2 of the server stack. In at least one embodiment, the manifold 854 includes a capillary conduit 870 that connects the anolyte delivery conduit 862 and the catholyte delivery conduit 864 to the microfluidic volume of the stacked die processor.

[0051] In some examples, the first wafer 860-1 includes a processor having a first die 832 and a second die 834 and a second processor having a third die 866 and a fourth die 868. The capillary conduit 870 is configured to deliver the anolyte fluid and the catholyte fluid from the manifold 854 to the first microfluidic volume between the first die 832 and the second die 834, and to the second microfluidic volume between the third die 866 and the fourth die 868. In some embodiments, the microfluidic volumes each include an ion transfer membrane such that the microfluidic volume is an electrochemical chamber as described with respect to any embodiment described herein. In some embodiments, the microfluidic volumes each include a heat transfer structure that connects the die to each other to transfer heat from the die to (multiple) electrochemical fluids, as described with respect to any embodiment described herein. In some embodiments, the microfluidic volumes each include TSVs to electrically connect the die to each other, as described with respect to any embodiment described herein. In at least one embodiment, at least one TSV is located in (multiple) heat transfer structures positioned in the microfluidic volume. For example, the heat transfer structure may include a flat heat sink that divides the microfluidic volume into channels, and TSVs may be positioned in the flat heat sink to allow electrical connection between the dies of each stacked die processor.

[0052] After at least partially draining the microfluidic volume, the electrochemical fluid (e.g., anolyte fluid and catholyte fluid) flows from the stacked die processor 824 to a return conduit, where the drained electrochemical fluid flows to a charging device to recharge the electrochemical fluid with energy from a power source and / or a heat exchanger to drain heat from the electrochemical fluid.

[0053] In some embodiments, the manifold 854 causes the electrochemical fluid to flow from the manifold 854 through the microfluidic volume in an outward direction of the server stack to the return conduit 856. For example, the manifold 854 can be a central manifold 854 that causes the electrochemical fluid to flow radially outward from the central manifold 854. In some embodiments, the manifold 854 causes the electrochemical fluid to flow radially outward on the first wafer 860-1 and radially inward on the second wafer 860-2. For example, the counter-flow of the electrochemical fluid on the different wafers 860-1, 860-2 can distribute heat more evenly throughout the server stack and reduce areas of concentrated heat. In at least one example, the first manifold is a central manifold in the center of the wafer, and the second manifold is a radial manifold located radially outward.

[0054] Fig. 9is a flow chart illustrating a method 972 for power delivery and thermal management in a stacked die processor. In some embodiments, the method 972 includes providing an electrochemical fluid to a microfluidic volume of a stacked die processor at 974. In some embodiments, the electrochemical fluid includes an anolyte fluid. In some embodiments, the electrochemical fluid includes a catholyte fluid. In some embodiments, the electrochemical fluid includes an anolyte fluid and a catholyte fluid.

[0055] Method 972 also includes generating electricity at the stacked die processor with an electrochemical fluid at 976. For example, generating electricity at the stacked die processor can include draining an anolyte fluid in the microfluidic volume. In other examples, generating electricity at the stacked die processor can include receiving ions with a catholyte fluid in the microfluidic volume. In other examples, generating electricity at the stacked die processor can include transferring ions across an ion transfer membrane located in the microfluidic volume. In some embodiments, generating electricity at the stacked die processor includes receiving an electric charge at one or more electrodes located in the microfluidic volume.

[0056] In some embodiments, method 972 also includes receiving heat from the stacked die processor using the electrochemical fluid in the microfluidic volume at 978. For example, when located in the microfluidic volume, the electrochemical fluid can contact and / or receive heat from the first die, the second die, a heat transfer structure connected to the first die and / or the second die, or other parts of the stacked die processor. The heat received by the electrochemical fluid cools the stacked die processor, and the method includes removing heat from the electrochemical fluid at a heat exchanger at 980.

[0057] In some embodiments, method 972 further includes recharging the electrochemical fluid at the charging device at 982. In some embodiments, the electrochemical fluid is recharged before the heat is removed at the heat exchanger. In some embodiments, the electrochemical fluid is recharged after the heat is removed at the heat exchanger. In some embodiments, the electrochemical fluid is recharged while the heat is removed at the heat exchanger. For example, the charging device may include a heat exchanger therein.

[0058] Recirculating the recharged and cooled electrochemical fluid can allow the electrochemical fluid to substantially continuously provide power and thermal management directly to the die of the stacked die processor. In at least one embodiment, the delivery of the electrochemical fluid to the microfluidic volume of the stacked die processor can allow for combined power delivery and thermal management, and allow for smaller, more powerful, more efficient and more reliable processors.

[0059] Industrial Applicability

[0060] The present disclosure generally relates to systems and methods for providing power and thermal management to a processor. More specifically, the present disclosure relates to power generation using an electrochemical fluid in a microfluidic volume of a stacked die processor, wherein heat is discharged from the microfluidic volume by the electrochemical fluid. In some embodiments, at least a portion of an electrochemical flow battery and / or a generator is located in a microfluidic volume between a first die and a second die of the processor. For example, an electrochemical fluid such as an anolyte or a catholyte flows into the microfluidic volume so that a voltage and a current are generated from the electrochemical fluid at the first die and / or the second die to power the processor or other components of the stacked die processor. The electrochemical fluid receives heat from the first die and / or the second die, and the electrochemical fluid flows out of the microfluidic volume to discharge heat from the processor.

[0061] In some embodiments, a heat generating component according to the present disclosure includes a die. The die may be a general purpose device such as a central processing unit (CPU) or a graphics processing unit (GPU), a special purpose device application specific integrated circuit (ASIC), a memory module (e.g., a cache memory, a volatile memory, or a non-volatile memory), or other electronic or processing components. The die generates heat during use.

[0062] In a conventional processor, the die is connected to a printed circuit board (PCB), which delivers power to the die via one or more wire traces. Delivering power via wire traces may be inefficient from an electrical perspective and / or a design space perspective. In addition, typically, the heat generated by the processor is transferred to a heat sink through a thermal interface material (TIM), which contacts a heat sink or other interface to discharge the heat to a liquid coolant or ambient atmosphere. In some cases, thermal management components and interfaces can limit the amount of heat that is discharged. In the case of a stacked die processor, conventional thermal management may not be able to cool all of the die in the processor.

[0063] In some embodiments, a stacked die processor includes at least a first die and a second die with a pin heat sink or other heat transfer structure stacked therebetween. In some embodiments, the heat transfer structure includes a through silicon via (TSV) to electrically connect the first die and the second die. In some examples, a first microfluidic volume is located between the first die and the second die, and a first set of pin heat sinks couples the first die and the second die through the first microfluidic volume. In some embodiments, a second microfluidic volume is located between the second die and the third die, and a second set of pin heat sinks couples the second die and the third die through the second microfluidic volume.

[0064] In some embodiments, an electrochemical fluid (e.g., a vanadium salt) positioned in a microfluidic volume allows each die to receive power directly from the electrochemical fluid. On-chip power generation of the electrochemical fluid can limit and / or eliminate the need for power delivery to TSVs. In at least one embodiment, data communication between the die of a processor can be increased by limiting and / or eliminating the need for power delivery to TSVs, providing additional space to the TSVs between the logic units of the die. In addition, direct power delivery and / or thermal management of the electrochemical fluid can allow for more efficient power delivery and / or thermal management.

[0065] In some embodiments, the electrochemical fluid is pushed through the first microfluidic volume and through the second microfluidic volume at the same flow rate. For example, a manifold forming at least a portion of the sidewalls of the microfluidic volume can be connected to an inlet conduit that can provide equal flow rates and / or equal fluid pressures to both the first microfluidic volume and the second microfluidic volume. In some embodiments, the flow rates are different, such as when different portions of the stacked die processor require different thermal management or power delivery. For example, a first inlet conduit can provide a first flow rate and / or fluid pressure to the first microfluidic volume, and a second inlet conduit can provide a second flow rate and / or fluid pressure to the second microfluidic volume.

[0066] Although some embodiments described herein have multiple dies of the same area, in other embodiments, at least one die of the stacked die processor has a different shape or area from another die in the stacked die processor. In some embodiments, the stacked die processor includes dies of different sizes. In one example, the first die and the second die (e.g., CPU and GPU) have substantially the same area, while the third die (e.g., memory) has a different area. In some embodiments, different dies may have the same in-plane aspect ratio and have different areas, such as two squares of different sizes. In some embodiments, different dies may have different in-plane aspect ratios and have the same area, such as two rectangles rotated 90° relative to each other. In some embodiments, different dies may have different areas but share at least one dimension of their area, such as the second die and the third die have different lengths in the flow direction but have equal widths perpendicular to the flow direction. In another example, the first die and the second die may have equal lengths in the flow direction, but have different widths perpendicular to the flow direction.

[0067] Different sized dies may have different thermal management requirements associated with a given power delivery. In some embodiments, a first set of heat transfer structures and a second set of heat transfer structures have different heat transfer surface features (HTSFs) thereon. For example, a first set of heat transfer structures may have a HTSF thereon, and a second set of heat transfer structures may lack a HTSF or have a different HTSF thereon. In other examples, a first set of heat transfer structures may have a plurality of recesses in its surface, and a second set of heat transfer structures may lack recesses or have recesses of a different pattern or different sizes in its surface. In other examples, a first set of heat transfer structures may have a plurality of protrusions on its surface, and a second set of heat transfer structures may lack protrusions or have protrusions of a different pattern or different sizes on its surface. In some embodiments, the thermal management requirements of the dies may be different, and the HTSFs of the first set of heat transfer structures and the second set of heat transfer structures may be different to achieve different thermal management characteristics.

[0068] In some embodiments, power delivery and thermal management combined by electrochemical fluids in microfluidic volumes according to the present disclosure allow for increased density of processors in computing devices, server blades, server racks, or data centers. For example, on-chip power delivery and cooling can allow for dense stacking of wafers with stacked die processors, which is not possible with conventional PCB power delivery and separate thermal management.

[0069] In some embodiments, the electrochemical generation system includes an electrochemical chamber having an ion transfer membrane that divides the electrochemical chamber. The electrochemical chamber includes a first electrochemical fluid and a second electrochemical fluid separated by the ion transfer membrane. In some embodiments, the ion transfer through the ion transfer membrane between the first electrochemical fluid and the second electrochemical fluid generates voltage and current to a processor or other electrical load and discharges the first electrochemical fluid. In some embodiments, an applied voltage from a power source (instead of an electrical load) causes ions to reversely transfer through the ion transfer membrane, which charges the first electrochemical fluid.

[0070] In some embodiments, the electrochemical chamber is in fluid communication with the first storage tank and the second storage tank. For example, the first electrochemical fluid is stored in the first storage tank and can flow into the electrochemical chamber, and the second electrochemical fluid is stored in the second storage tank and can flow into the electrochemical chamber. The first pump and the second pump can control the flow of the first electrochemical fluid and the second electrochemical fluid to the electrochemical chamber 104, respectively. In some embodiments, the rate at which ions are transferred across the ion transfer membrane is at least partially related to the flow rate of the first electrochemical fluid and the second electrochemical fluid into the electrochemical chamber (and in contact with the ion transfer membrane).

[0071] The charge generated by ion transfer through the ion transfer membrane can be collected in an electrochemical chamber positioned on opposite sides of the ion transfer membrane or at a first electrode and a second electrode on the electrochemical chamber. For example, the first electrode is in contact with the first electrochemical fluid and the second electrode is in contact with the second electrochemical fluid. The electrodes collect charge from the first electrochemical fluid and the second electrochemical fluid. In some embodiments, the first electrochemical fluid is an anolyte fluid, and the second electrochemical fluid is a catholyte fluid. In some embodiments, the anolyte fluid and the catholyte fluid are the same fluid or compound in different states of charge. In at least one embodiment, the anolyte fluid and the catholyte fluid are or include a vanadium salt.

[0072] In some embodiments, the electrochemical generator system includes a first electrochemical chamber configured to discharge an electrochemical fluid and provide power to an electrical load (e.g., a processor), and the electrochemical generator system includes a second electrochemical chamber configured to receive power from a power source (e.g., a grid or other power source) to recharge the electrochemical fluid.

[0073] In some embodiments, the electrochemical fluid is substantially continuously circulated through the electrochemical generator system, receiving power from the power source and delivering the power to the electrical load. In some embodiments, when the pump causes the electrochemical fluid to flow, the electrochemical fluid is stored in a storage tank until power similar to a battery is needed. As described herein, the first electrochemical fluid and the second electrochemical fluid exchange ions through the first ion transfer membrane in the first electrochemical chamber to discharge the first electrochemical fluid and generate electricity. The first electrochemical fluid and the second electrochemical fluid exchange ions through the second ion transfer membrane in the second electrochemical chamber to charge the first electrochemical fluid and store electricity.

[0074] In some embodiments, at least a portion of the electrochemical chamber configured to provide power is located in a microfluidic volume between the dies on the stacked die processor. For example, a first electrochemical fluid can be positioned in the microfluidic volume. In another example, a second electrochemical fluid can be positioned in the microfluidic volume. In yet another example, both the first electrochemical fluid and the second electrochemical fluid can be positioned in the microfluidic volume.

[0075] In some embodiments, the processor unit has a first die and a second die, wherein the microfluidic volume is positioned between the dies. In some embodiments, the minimum distance between the first die and the second die may be less than 100 microns. In some embodiments, the minimum distance between the first die and the second die may be less than 200 microns. In some embodiments, the minimum distance between the first die and the second die may be less than 300 microns. In some embodiments, the distance between the first die and the second die is substantially constant across the microfluidic volume. For example, the surfaces adjacent to each other of the first die and the second die may be substantially planar and parallel. In other embodiments, at least a portion of the surfaces adjacent to each other of the first die and the second die is non-planar, and the minimum distance between the first die and the second die is defined by the position on the surfaces closest to each other of the first die and the second die.

[0076] In some embodiments, the microfluidic volume of the processor is part of an electrochemical chamber that is configured to provide power by discharging a first electrochemical fluid to a second electrochemical fluid. For example, ion transfer across an ion transfer membrane can generate a potential between (multiple) first electrodes and (multiple) second electrodes. In at least one example, the first electrochemical fluid is positioned in a microfluidic volume on a first side of the second die, the second electrochemical fluid is positioned on a second side of the second die, and the ion transfer membrane is positioned between the first electrochemical fluid and the second electrochemical fluid. The second die can be positioned between the first electrode and the second electrode to receive power. For example, the first electrochemical fluid can be an anolyte, and the second electrochemical fluid can be a catholyte, so that the second die (and its circuit) is positioned as an electrical load between a first electrode in contact with the anolyte and a second electrode in contact with the catholyte.

[0077] In some embodiments, the processor is connected to a conventional PCB. In some embodiments, the processor is integrally formed with a silicon wafer. For example, a first die can be integrally formed with a silicon wafer. A first die and a second die separated by a microfluidic volume can be connected by one or more heat transfer structures positioned between the first die and the second die. In some embodiments, the heat transfer structure is configured to transfer heat from the first die and / or the second die to a first electrochemical fluid and / or a second electrochemical fluid positioned in the microfluidic volume.

[0078] While some processors according to the present invention have a first electrochemical fluid positioned in a microfluidic volume and a second electrochemical fluid positioned outside the microfluidic volume, other embodiments of the processor have the first electrochemical fluid and the second electrochemical fluid positioned in the microfluidic volume. For example, an ion transfer membrane is positioned in the microfluidic volume to separate the first electrochemical fluid and the second electrochemical fluid. In at least one embodiment, the ion transfer membrane is a heat transfer structure that allows ions to move through the membrane and be heated by the membrane.

[0079] In some embodiments, the processor has a plurality of heat transfer structures positioned in the microfluidic volume between the first tube core and the second tube core. In some embodiments, at least one heat transfer structure is also an ion transfer membrane. In some embodiments, in addition to the heat transfer structure, at least one ion transfer membrane is located in the microfluidic volume. For example, the heat transfer structure and (multiple) ion transfer membranes can divide the microfluidic volume into a plurality of channels. In some embodiments, at least some adjacent channels have a first electrochemical fluid and a second electrochemical fluid respectively to allow ions to transfer through the ion transfer membrane.

[0080] In some embodiments, the heat transfer structure is a straight heat sink that defines two electrochemical chambers adjacent to each other, each electrochemical chamber being divided by an ion transport membrane positioned therein to create a first channel and a second channel in each electrochemical chamber. In some embodiments, the electrochemical chambers allow the flow of a first electrochemical fluid in the first channel and a second electrochemical fluid in the second channel. In other examples, at least a portion of the heat transfer structure may be curved or have a curved portion. For example, a first heat transfer structure may be curved relative to another heat transfer structure so that the cross-sectional area of ​​the channel changes along the flow direction of the electrochemical fluid. In at least one embodiment, the cross-sectional area of ​​the channel increases in the flow direction to reduce the speed at which the electrochemical fluid passes through the channel. In at least one embodiment, the cross-sectional area of ​​the channel decreases along the flow direction to increase the speed at which the electrochemical fluid passes through the channel.

[0081] In some embodiments, the first electrochemical fluid in the first channel separated from the second electrochemical fluid in the second channel by the ion transfer membrane generates an electric potential between the (multiple) first electrodes positioned in the first channel and the (multiple) second electrodes positioned in the second channel. In some embodiments, the first tube core and the second tube core both have electrodes positioned in contact with one or more electrochemical fluids in the first electrochemical fluid and the second electrochemical fluid. Therefore, the first tube core and the second tube core can both receive electricity from the electrochemical fluid, and the electrochemical fluid receives heat from the first tube core and the second tube core to discharge heat therefrom. In some embodiments, the heat transfer structure also transfers heat to the electrochemical fluid. In some embodiments, at least one ion transfer membrane is a heat transfer structure.

[0082] In some embodiments, the stacked die processor has a first die, a second die, and a third die. In some embodiments, the first microfluidic volume is located between the first die and the second die, and the second microfluidic volume is located between the second die and the third die. In some embodiments, the first electrochemical fluid is located in the first microfluidic volume, and the second electrochemical fluid is located in the second microfluidic volume. The first microfluidic volume and the second microfluidic volume form at least a portion of an electrochemical chamber divided by the second die and the ion transfer membrane. In some embodiments, the first electrode and the second electrode that contact the first electrochemical fluid and the second electrochemical fluid, respectively, allow the electrochemical chamber to provide power to at least the second die. In some embodiments, one or more TSVs in a heat transfer structure or other structure between the second die and the first die and / or the third die can transfer power from the electrodes to different parts of the processor.

[0083] In some embodiments, the flow directions of the first electrochemical fluid and the second electrochemical fluid are oriented in the same direction relative to the processor. In some embodiments, the flow directions of the first electrochemical fluid and the second electrochemical fluid are oriented in different directions relative to the processor. For example, the flow direction of the first electrochemical fluid can be opposite to the flow direction of the second electrochemical fluid relative to the processor. In some examples, making the flow directions opposite to each other can allow the first electrochemical fluid and the second electrochemical fluid to more effectively receive heat from the die and / or heat transfer structure of the stacked die processor and cool the stacked die processor.

[0084] In some embodiments, the stacked die processor has an ion transfer membrane located in the microfluidic volume and coplanar with the first die and the second die. In some embodiments, the microfluidic volume between the first die and the second die defines at least a portion of the electrochemical chamber. The ion transfer membrane divides the microfluidic volume and separates the first electrochemical fluid from the second electrochemical fluid. In some embodiments, the electrode receives the power generated by the ion transfer through the ion transfer membrane, and the TSV electrically connects the first die, and the second die can conduct electricity between them.

[0085] In some embodiments, the electrochemical generator system includes a heat exchanger. In some embodiments, the electrochemical generator system includes a first electrochemical chamber configured to discharge an electrochemical fluid and provide power to an electrical load (e.g., a processor), and the electrochemical generator system includes a second electrochemical chamber configured to receive power from a power source (e.g., a grid or other power source) to recharge the electrochemical fluid.

[0086] In some embodiments, the electrochemical fluid is substantially continuously circulated through the electrochemical generator system, receiving power from the power source and delivering the power to the electrical load. In some embodiments, when the pump causes the electrochemical fluid to flow, the electrochemical fluid is stored in a storage tank until power similar to a battery is needed. The first electrochemical fluid and the second electrochemical fluid exchange ions through the first ion transfer membrane in the first electrochemical chamber to discharge the first electrochemical fluid and generate electricity. The first electrochemical fluid and the second electrochemical fluid exchange ions through the second ion transfer membrane in the second electrochemical chamber to charge the first electrochemical fluid and store electricity.

[0087] In some embodiments, at least a portion of the electrochemical chamber configured to provide power is located in a microfluidic volume between the dies on the stacked die processor, as shown and described herein. For example, a first electrochemical fluid can be positioned in the microfluidic volume. In another example, a second electrochemical fluid can be positioned in the microfluidic volume. In yet another example, both the first electrochemical fluid and the second electrochemical fluid can be positioned in the microfluidic volume.

[0088] The first electrochemical fluid and the second electrochemical fluid can receive heat from the stacked die processor or other heat generating components of the electrochemical generator system. The first electrochemical fluid and the second electrochemical fluid can flow from the stacked die processor or other heat generating components to the heat exchanger and discharge at least a portion of the heat from the first electrochemical fluid and the second electrochemical fluid. Therefore, the first electrochemical fluid and the second electrochemical fluid can directly provide power to the processor and remove heat from the processor in a single medium passing through the microfluidic volume of the processor.

[0089] In some embodiments, the combined power delivery and cooling in the microfluidic volume of the stacked die processor allows for increased density of the processor. In some embodiments, a computing system such as a server stack has electrochemical power generation and cooling in the microfluidic volume of the processor. The server stack includes a plurality of wafers having stacked die processors thereon. For example, the stacked die processor can be integrally formed with a wafer, wherein the microfluidic volume in the stacked die processor is formed in the material (e.g., silicon) of the wafer.

[0090] In some embodiments, the microfluidic volume receives one or more electrochemical fluids from a manifold or other delivery element of a server stack that directs the charged electrochemical fluid toward the stacked die processor to provide power as described with respect to any of the embodiments described herein. The (multiple) electrochemical fluids are discharged at the stacked die processor to provide power and receive heat from the stacked die processor. The discharged hot electrochemical fluid flows through a return conduit to a charging device to recharge the electrochemical fluid with energy from a power source. In some embodiments, the charging device includes a heat exchanger to discharge heat from the electrochemical fluid. In some embodiments, the heat exchanger discharges heat from the electrochemical fluid to the ambient atmosphere. In some embodiments, the heat exchanger discharges heat from the electrochemical fluid to another cooling fluid, such as in a secondary liquid cooling system.

[0091] In some embodiments, the manifold is configured to deliver an electrochemical fluid to a portion of a server stack, such as a server stack described herein. In some embodiments, the manifold includes an anolyte delivery conduit (e.g., a tube or pipe) configured to deliver an anolyte fluid to a plurality of wafers of the server stack. The manifold also includes a catholyte delivery conduit configured to deliver a catholyte fluid to a plurality of wafers of the server stack. In at least one embodiment, the manifold includes a capillary conduit that connects the anolyte delivery conduit and the catholyte delivery conduit to the microfluidic volume of the stacked die processor.

[0092] In some examples, the first wafer includes a processor having a first die and a second die and a second processor having a third die and a fourth die. The capillary conduit is configured to deliver an anolyte fluid and a catholyte fluid from a manifold to a first microfluidic volume between the first die and the second die, and to a second microfluidic volume between the third die and the fourth die. In some embodiments, each of the microfluidic volumes includes an ion transfer membrane so that the microfluidic volume is an electrochemical chamber as described with respect to any embodiment described herein. In some embodiments, each of the microfluidic volumes includes a heat transfer structure that connects the die to each other to transfer heat from the die to (multiple) electrochemical fluids, as described with respect to any embodiment described herein. In some embodiments, each of the microfluidic volumes includes a TSV to electrically connect the die to each other, as described with respect to any embodiment described herein. In at least one embodiment, at least one TSV is located in a (multiple) heat transfer structure positioned in the microfluidic volume. For example, the heat transfer structure may include a straight heat sink that divides the microfluidic volume into channels, and the TSV may be positioned in the straight heat sink to allow electrical connection between the die of each stacked die processor.

[0093] After at least partially draining the microfluidic volume, the electrochemical fluid (e.g., anolyte fluid and catholyte fluid) flows from the stacked die processor to a return conduit, where the drained electrochemical fluid flows to a charging device to recharge the electrochemical fluid with energy from a power source and / or a heat exchanger to drain heat from the electrochemical fluid.

[0094] In some embodiments, the manifold causes the electrochemical fluid to flow from the manifold through the microfluidic volume in an outward direction of the server stack to a return conduit. For example, the manifold can be a central manifold that causes the electrochemical fluid to flow radially outward from the central manifold. In some embodiments, the manifold causes the electrochemical fluid to flow radially outward on a first wafer and radially inward on a second wafer. For example, the counterflow of electrochemical fluids on different wafers can distribute heat more evenly throughout the server stack and reduce areas of concentrated heat. In at least one example, the first manifold is a central manifold in the center of the wafer, and the second manifold is a radial manifold located radially outward.

[0095] In some embodiments, a method of power delivery and thermal management in a stacked die processor includes providing an electrochemical fluid to a microfluidic volume of a stacked die processor. In some embodiments, the electrochemical fluid includes an anolyte fluid. In some embodiments, the electrochemical fluid includes a catholyte fluid. In some embodiments, the electrochemical fluid includes an anolyte fluid and a catholyte fluid.

[0096] The method also includes generating electricity at the stacked die processor with an electrochemical fluid. For example, generating electricity at the stacked die processor can include draining an anolyte fluid in a microfluidic volume. In other examples, generating electricity at the stacked die processor can include receiving ions with a catholyte fluid in the microfluidic volume. In other examples, generating electricity at the stacked die processor can include transferring ions across an ion transfer membrane located in the microfluidic volume. In some embodiments, generating electricity at the stacked die processor includes receiving an electric charge at one or more electrodes located in the microfluidic volume.

[0097] In some embodiments, the method also includes receiving heat from the stacked die processor using the electrochemical fluid in the microfluidic volume. For example, when located in the microfluidic volume, the electrochemical fluid can contact and / or receive heat from the first die, the second die, a heat transfer structure connected to the first die and / or the second die, or other parts of the stacked die processor. The heat received by the electrochemical fluid cools the stacked die processor, and the method includes removing heat from the electrochemical fluid at a heat exchanger.

[0098] In some embodiments, the method further comprises recharging the electrochemical fluid at the charging device. In some embodiments, the electrochemical fluid is recharged before the heat is discharged at the heat exchanger. In some embodiments, the electrochemical fluid is recharged after the heat is discharged at the heat exchanger. In some embodiments, the electrochemical fluid is recharged while the heat is discharged at the heat exchanger. For example, the charging device may include a heat exchanger therein.

[0099] Recirculating the recharged and cooled electrochemical fluid can allow the electrochemical fluid to substantially continuously provide power and thermal management directly to the die of the stacked die processor. In at least one embodiment, the delivery of the electrochemical fluid to the microfluidic volume of the stacked die processor can allow for combined power delivery and thermal management, and allow for smaller, more powerful, more efficient and more reliable processors.

[0100] The present disclosure relates to systems and methods for combined power delivery and cooling to a processor according to at least the examples provided in the following sections:

[0101] [A1] In some embodiments, the processing unit includes a first die and a second die with a microfluidic volume between the first die and the second die. At least one heat transfer structure couples the first die to the second die and is located in the microfluidic volume. An electrochemical fluid is positioned in the microfluidic volume to provide electrochemical energy to at least one of the first die and the second die, and to receive heat from the first die and the second die.

[0102] [A2] In some embodiments, the electrochemical fluid of [A1] is an anolyte fluid, and the catholyte fluid is separated from the anolyte fluid by a membrane.

[0103] [A3] In some embodiments, the membrane and catholyte fluid of [A2] are located in a microfluidic volume.

[0104] [A4] In some embodiments, the heat transfer structure of [A3] is a film.

[0105] [A5] In some embodiments, the heat transfer structure of [A4] divides the microfluidic volume into at least a first channel and a second channel, wherein the anolyte fluid is located in the first channel and the catholyte fluid is located in the second channel.

[0106] [A6] In some embodiments, the cross-sectional area of ​​the first channel of [A5] varies in the direction of flow of the anolyte fluid therein.

[0107] [A7] In some embodiments, the heat transfer structure of [A5] is curved in the direction of flow of the anolyte fluid.

[0108] [A8] In some embodiments, at least a portion of the film of [A2] includes a second die.

[0109] [A9] In some embodiments, the heat transfer structure of any one of [A1] to [A8] includes a plurality of pin-shaped heat sinks.

[0110] [A10] In some embodiments, the processing unit of any one of [A1] to [A9] includes a charging device that communicates with the microfluidic volume fluid and is configured to recharge the discharged electrochemical fluid with a power source after the electrochemical fluid provides electrochemical energy to at least one of the first tube core and the second tube core.

[0111] [A11] In some embodiments, the processing unit of any one of [A1] to [A10] includes a heat exchanger in communication with the microfluidic volume and configured to remove heat from the electrochemical fluid.

[0112] [A12] In some embodiments, the microfluidic volume of any one of [A1] to [A11] is a first microfluidic volume, and the processing unit also includes a second microfluidic volume adjacent to the first tube core and opposite to the first microfluidic volume, wherein at least a portion of the electrochemical fluid is positioned in the second microfluidic volume to provide electrochemical energy to the first tube core and receive heat from the first tube core.

[0113] [A13] In some embodiments, the processing unit of any one of [A1] to [A12] also includes an electrochemical fluid positioned in the microfluidic volume to provide electrochemical energy to at least one of the first die and the second die and receive heat from the first die and the second die.

[0114] [B1] In some embodiments, a computing system includes a first wafer, a second wafer, and a manifold. The first wafer includes a first die and a second die, with a first microfluidic volume between the first die and the second die. A first plurality of heat transfer structures couple the first die to the second die and are located in the first microfluidic volume. The second wafer includes a third die and a fourth die, with a second microfluidic volume between the third die and the fourth die. A second plurality of heat transfer structures couple the third die to the fourth die and are located in the second microfluidic volume. The manifold is configured to flow an electrochemical fluid through the first microfluidic volume and the second microfluidic volume. The electrochemical fluid is configured to provide power to the first die and the second die, and receive heat from the first plurality of heat transfer structures and the second plurality of heat transfer structures.

[0115] [B2] In some embodiments, the heat transfer structure of [B1] includes a flat heat sink.

[0116] [B3] In some embodiments, the first wafer of [B1] or [B2] further includes through silicon vias (TSVs) electrically connecting the first die to the second die.

[0117] [B4] In some embodiments, the second wafer of [B3] further includes TSVs electrically connecting the third die to the fourth die.

[0118] [B5] In some embodiments, the first flow direction of the electrochemical fluid through the first microfluidic volume of any one of [B1] to [B4] is opposite to the second flow direction of the electrochemical fluid through the second microfluidic volume.

[0119] [C1] In some embodiments, a method of providing power and cooling to a stacked die processor includes providing an electrochemical fluid to a microfluidic volume of the stacked die processor, generating power at the stacked die processor using the electrochemical fluid, receiving heat from the stacked die processor using the electrochemical fluid in the microfluidic volume, and removing heat from the electrochemical fluid at a heat exchanger.

[0120] [C2] In some embodiments, the method of [C1] also includes recharging the electrochemical fluid at a charging device.

[0121] [C3] In some embodiments, generating power at a stacked die processor using the electrochemical fluid of [C1] or [C2] includes transferring ions across an ion transfer membrane located in the microfluidic volume.

[0122] The articles "one", "an" and "the" are intended to mean that there are one or more elements in the foregoing description. The terms "comprising", "including" and "having" are intended to be inclusive, and mean that there may be additional elements in addition to the listed elements. In addition, it should be understood that reference to "one embodiment" or "embodiment" of the present disclosure is not intended to be interpreted as excluding the existence of additional embodiments that also incorporate the features. For example, any element described with respect to the embodiments herein may be combined with any element of any other embodiment described herein. The numbers, percentages, ratios or other values ​​described herein are intended to include other values ​​of "about" or "approximately" the value and the value, as will be understood by a member of ordinary skill in the art in the field covered by the embodiments of the present disclosure. Therefore, the value should be interpreted broadly enough to cover values ​​that are at least close enough to the value to perform the desired function or achieve the desired result. The value includes at least the expected changes in the appropriate manufacturing or production process, and may include values ​​within 5%, 1%, 0.1% or 0.01% of the value.

[0123] Those of ordinary skill in the art will recognize that, in light of the present disclosure, equivalent constructions do not depart from the scope of the present disclosure, and that various changes, substitutions, and modifications may be made to the embodiments disclosed herein without departing from the scope of the present disclosure. Equivalent constructions, including functional "means plus function" clauses are intended to cover structures described herein that perform the functions described, including structural equivalents that operate in the same manner and equivalent structures that provide the same functions. It is the express intent of the applicant not to invoke means plus function or other functional claims for any claim, except those in which the words "means for..." appear together with the associated function. Each addition, deletion, and modification to the embodiments that falls within the meaning and scope of the claims will be included in the claims.

[0124] It should be understood that any directions or reference frames in the foregoing description are merely relative directions or movements. For example, any reference to "front" and "back" or "top" and "bottom" or "left" and "right" is merely a description of the relative position or movement of the relevant elements.

[0125] The present disclosure may be implemented in other specific forms without departing from its characteristics. The described embodiments will be considered illustrative rather than restrictive. Therefore, the scope of the present disclosure is indicated by the appended claims rather than by the preceding description. Changes within the meaning and scope of the equivalents of the claims will be included within their scope.

Claims

1. A processing unit, comprising: a first tube core; A second tube core; a microfluidic volume between the first die and the second die, the microfluidic volume configured to receive an electrochemical fluid; as well as A heat transfer structure couples the first die to the second die and is located in the microfluidic volume.

2. The processing unit of claim 1, wherein the electrochemical fluid is an anolyte fluid and a catholyte fluid is separated from the anolyte fluid by a membrane.

3. A processing unit according to claim 2, wherein the membrane and the cathode electrolyte fluid are located in the microfluidic volume. The processing unit of claim 3 , wherein the heat transfer structure is the membrane.

5. The processing unit of claim 4, wherein the heat transfer structure divides the microfluidic volume into at least a first channel and a second channel, wherein the anolyte fluid is located in the first channel and the catholyte fluid is located in the second channel.

6. The processing unit of claim 5, wherein the cross-sectional area of ​​the first channel varies along the direction of flow of the anolyte fluid.

7. The processing unit of claim 5, wherein the heat transfer structure is curved along the direction of flow of the anolyte fluid.

8. The processing unit of claim 2, wherein at least a portion of the film comprises the second die.

9. The processing unit of any one of the preceding claims, wherein the heat transfer structure comprises a plurality of pin fins.

10. The processing unit according to any of the preceding claims further includes a charging device that communicates with the microfluidic volume fluid, and the charging device is configured to recharge the discharged electrochemical fluid with a power source after the electrochemical fluid provides electrochemical energy to at least one of the first tube core and the second tube core.

11. The processing unit of any preceding claim, further comprising a heat exchanger in communication with the microfluidic volume and configured to remove heat from the electrochemical fluid.

12. A processing unit according to any of the preceding claims, wherein the microfluidic volume is a first microfluidic volume and the processing unit further comprises a second microfluidic volume proximate to the first die and opposite to the first microfluidic volume, wherein at least a portion of the electrochemical fluid is positioned in the second microfluidic volume, the second microfluidic volume providing electrochemical energy to the first die and receiving heat from the first die.

13. A computing system comprising: a first wafer comprising a processing unit according to any one of the preceding claims; The second chip includes: The third die, The fourth die, a second microfluidic volume between the third die and the fourth die, and a second plurality of heat transfer structures coupling the third die to the fourth die and located in the second microfluidic volume; as well as A manifold is configured to flow an electrochemical fluid through the first microfluidic volume and the second microfluidic volume, the electrochemical fluid configured to provide power to the first die and the second die and receive heat from the first plurality of heat transfer structures and the second plurality of heat transfer structures.

14. The computing system of claim 13, further comprising a through silicon via (TSV) electrically connecting the first die to the second die.

15. The computing system of claim 14, further comprising TSVs electrically connecting the third die to the fourth die.

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