A measurement system and method for measuring crystal defect position and size

Abstract

The invention discloses a measurement system and method for the position and size of a crystal defect, comprising a rotating device, on which a crystal is arranged; a frame, which is arranged above the rotating device; a first laser, which is arranged on one side of the frame and irradiates horizontally toward one side of the crystal; a second laser, which is arranged at the upper end of the frame and irradiates vertically downward, and moves along the X-axis direction; a third laser, which is arranged on the other side of the frame and irradiates horizontally toward one side of the crystal; a plano-convex cylindrical mirror, which is arranged on an optical path between the first laser and the crystal close to the first laser; a circular lens, which is arranged between the first laser and the plano-convex cylindrical mirror; and a detector, which is arranged at the crystal position and is used to detect scattered light from a crystal defect point. The invention has the advantages of rapid measurement and calculation of the position and size of a crystal defect.

Description

Technical Field

[0001] The present invention relates to the technical field of position size calculation and measurement, and in particular to a measurement system and method for the position size of a crystal defect. Background Art

[0002] At present, potassium dihydrogen phosphate (chemical formula KH2PO4, abbreviated as KDP) crystal is an excellent nonlinear optical crystal material with the characteristics of high laser damage threshold, wide light transmission band, high electro-optic coefficient and high optical uniformity.

[0003] Large-sized KDP crystals are currently the only crystal material that can be used for electro-optical switches and frequency conversion devices in high-power laser-driven inertial confinement fusion (ICF) devices. With the continuous development and advancement of inertial confinement nuclear fusion experiments at home and abroad, laser devices require higher laser flux, resulting in a higher risk of laser damage to KDP-type crystal components, and higher and higher requirements for KDP crystals. The crystal growth structure determines the growth mechanism, and whether the crystal growth structure is stable directly determines the crystal quality. Therefore, real-time observation and analysis of the location and size of defects in the crystal structure has important theoretical and practical significance.

[0004] In the existing technology, laser interferometry, microscopy and imaging technology have been applied to the detection of crystal defects. The defect types are divided into impurities such as bubbles, pits, broken crystals or particles. However, the above detection methods all have some inherent limitations, making it difficult to accurately and quickly locate the position, size and dimensions of KDP crystal defects.

[0005] In summary, there are the following technical problems:

[0006] It is difficult to accurately and quickly calculate and measure the location, size and dimensions of KDP crystal defects. Summary of the invention

[0007] The main purpose of the present invention is to provide a crystal defect position and size measurement system and measurement method to solve the problem in the prior art that it is difficult to accurately and quickly calculate and measure the position and size of KDP crystal defects.

[0008] In order to achieve the above object, according to one aspect of the present invention, a system for measuring the position and size of a crystal defect is provided, comprising:

[0009] A rotating device, wherein a crystal is provided on the rotating device;

[0010] A frame, wherein the frame is mounted above the rotating device;

[0011] A first laser, which is arranged on one side of the frame and irradiates horizontally toward one side of the crystal;

[0012] A second laser, wherein the second laser is disposed at the upper end of the frame, the second laser irradiates vertically downward, and the second laser moves along the X-axis direction;

[0013] A third laser, the third laser is arranged on the other side of the frame, the third laser irradiates horizontally toward one side of the crystal, and the third laser moves along the Z-axis direction;

[0014] A plano-convex cylindrical mirror, which is arranged between the first laser and the crystal on an optical path close to the first laser;

[0015] A circular lens, wherein the circular lens is arranged between the first laser and the plano-convex cylindrical mirror;

[0016] A detector is arranged at a crystal position and is used to detect scattered light from a crystal defect point.

[0017] Preferably, the rotating device comprises:

[0018] A rotating motor, the rotating motor is fixed on a base;

[0019] A rotating bracket is connected to a rotating motor.

[0020] Preferably, the frame comprises:

[0021] A second fixed platform, wherein the second fixed platform is arranged horizontally;

[0022] A first fixed platform, the first fixed platform is vertically arranged, and the first fixed platform is perpendicular to the second fixed platform;

[0023] The third fixed platform is vertically arranged, the third fixed platform is perpendicular to the second fixed platform, and the third fixed platform is parallel to the first fixed platform.

[0024] Preferably, a first laser is arranged on the first fixed platform, a first stepper motor is arranged on the second fixed platform, the first stepper motor is connected to the second laser, and a second stepper motor is arranged on the third fixed platform, the second stepper motor is connected to the third laser.

[0025] Preferably, the rotating bracket drives the crystal to rotate around the central axis of the crystal.

[0026] According to another aspect of the present invention, a method for measuring a crystal defect position size measurement system is provided, comprising:

[0027] Step 1: Start the first laser, drive the crystal to rotate through the rotating device, and detect it in real time through the detector. When the detector detects scattered light, stop rotating, and measure the rotation angle through the rotation angular velocity and rotation time;

[0028] Step 2: turn off the first laser, start the second laser, move along the X-axis direction through the second laser, stop moving when the detector detects scattered light, measure the first displacement of all defect points in sequence through the first moving speed and the first moving time, and obtain the first position points of all defect points;

[0029] Step 3: turn off the second laser, start the third laser, move along the Z-axis direction through the third laser, stop moving when the detector detects scattered light, measure the second displacement of all defect points in sequence through the second moving speed and the second moving time, and obtain the second position points of all defect points;

[0030] Step 4: turn off the third laser, start the first laser, repeat steps 1, 2 and 3, measure the first position point and the second position point of all surface defect points, and obtain the positions of all surface defect points through the first position point and the second position point.

[0031] Preferably, in step 1, the crystal is placed at the axis of the rotating bracket and rotated at an angular velocity Rotate along the central axis of the crystal. The first laser emits laser light, which is collimated and calibrated, and then forms a vertical laser light knife through the optical scribing device. The vertical laser light knife irradiates the crystal. When there is no crystal defect, the laser will pass through the crystal. When a crystal defect is detected, scattered light will be emitted from the defect position. The detector receives the scattered light signal, stops the rotation of the rotating bracket, turns off the first laser, and records the crystal rotation time T1. According to the rotation angular velocity V1 and the rotation time T1, the rotation angle θ1 is calculated.

[0032]

[0033] in, Rotation angle; Rotation time; V1 rotation angular velocity.

[0034] Preferably, in step 2, the second laser is started, and moves along the negative direction of the X-axis on the second fixed platform at a first moving speed V2, and timing starts when the laser emitted by the second laser starts to contact the edge of the crystal. When a crystal defect is detected, scattered light will be emitted from the defect position, and the first moving time T2 is recorded at this time, and the first displacement X1 is calculated based on the first time.

[0035]

[0036] Wherein, X1 is the first displacement; is the first moving speed; T2 is the first Moving time;

[0037] The second laser scans the crystal along the second fixed platform to m defect points. The first displacement of the m defect points is recorded as set A1, A1={X1, X2, X3...X m}.

[0038] Preferably, in step 3, after the second laser scan is completed, the second laser is turned off, and the third laser is turned on. The third laser moves on the third fixed platform along the positive direction of the Z axis at a second moving speed V2. Timing starts when the laser emitted by the third laser starts to contact the edge of the crystal. When the crystal is monitored, the defect position will emit scattered light. At this time, the second moving time T3 is recorded, and the second displacement Z1 is calculated based on the second moving time.

[0039]

[0040] in, is the second displacement; is the second moving speed; For the second Moving time;

[0041] The third laser scans the crystal along the third fixed platform to n defect points. The second displacement of the n defect points is recorded as set B2, B2={Z1, Z2, Z3...Z n}.

[0042] Preferably, in step 4, after the third laser scan is completed, the third laser is turned off, the first laser is turned on, and after stabilization, the rotating bracket is turned on, and the above monitoring steps 1, 2 and 3 are repeated;

[0043] The first laser scans the crystal and p irradiated surfaces are found to have defects. The rotation angles are recorded as a set C, C = {θ1, θ2, θ3.....θ p}, the corresponding second laser scan defect point data set A={A1, A2, A3...A p}, the corresponding data set B of the third laser scanning defect point = {B1, B2, B3.....B p};

[0044] The crystal is three-dimensionally modeled, and the data set is projected into a three-dimensional coordinate system to obtain a crystal point, line, surface or volume defect position and size model.

[0045] The application of the technical solution of the present invention has the following technical effects:

[0046] The crystal is driven to rotate by a rotating device, and the detector is used for real-time detection. When the detector detects scattered light, the rotation stops, and the rotation angle is measured by the rotation angular velocity and the rotation time; by turning off the first laser, starting the second laser, moving along the X-axis direction by the second laser, and stopping when the detector detects scattered light, the first displacement of all defect points is measured in sequence by the first moving speed and the first moving time, and the first position point of all defect points is obtained; by turning off the second laser, starting the third laser, moving along the Z-axis direction by the third laser, and stopping when the detector detects scattered light, the second displacement of all defect points is measured in sequence by the second moving speed and the second moving time, and the second position point of all defect points is obtained; by turning off the third laser, starting the first laser, repeatedly measuring the first position point and the second position point of all surface defect points, and obtaining the position of all surface defect points through the first position point and the second position point, and then measuring the position and position size of the crystal defect point. The position size data set is projected into a three-dimensional coordinate system to obtain the position and position size model of crystal point, line, surface or body defect.

[0047] The detector collects the scattered light of the second laser and starts the timing mark. When the scattered light disappears, the timing mark is stopped. The size of the defect point in the X-axis direction is calculated through the moving speed and timing time difference of the second laser. The detector collects the scattered light of the third laser and starts the timing mark. When the scattered light disappears, the timing mark is stopped. The size of the defect point in the Z-axis direction is calculated through the moving speed and timing time difference of the third laser, and then the size of the defect point is obtained, and the size set of all defect points is obtained in turn. The size data set is projected into a three-dimensional coordinate system to obtain a size model of crystal point, line, surface or volume defect.

[0048] It can quickly locate crystal defects and measure their sizes, provide guidance for crystal precision cutting and grinding processes, improve crystal quality, and reduce crystal loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0050] Figure 1 A flow chart showing a measurement method of a crystal defect position size measurement system according to the present invention is shown;

[0051] Figure 2 Shows Figure 1 Structural view of the measurement system for the location and size of crystal defects in;

[0052] Figure 3 Shows Figure 1 Crystal illumination view of the metrology system for the location and size of crystal defects in the crystal;

[0053] Figure 4 Shows Figure 1 X-axis defect size measurement view of the metrology system for measuring the crystal defect position size;

[0054] Figure 5 Shows Figure 1 Z-axis defect size measurement view of the crystal defect location size metrology system.

[0055] The above drawings include the following reference numerals:

[0056] A first fixed platform 1; a second fixed platform 2; a third fixed platform 3; a first stepping motor 4; a second stepping motor 5; a first laser 6; a second laser 7; a third laser 8; a circular lens 9; a plano-convex cylindrical mirror 10; a detector 11; a crystal 12; a rotating bracket 13; and a rotating motor 14. DETAILED DESCRIPTION

[0057] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0058] like Figures 1 to 5 As shown, an embodiment of the present invention provides a measurement system for the position and size of a crystal defect, comprising: a rotating device, on which a crystal 12 is provided; a frame, which is mounted above the rotating device; a first laser 6, which is arranged on one side of the frame, and which irradiates horizontally toward one side of the crystal 12; a second laser 7, which is arranged at the upper end of the frame, and which irradiates vertically downward, and which moves along the X-axis direction; a third laser 8, which is arranged on the other side of the frame, and which irradiates horizontally toward one side of the crystal 12, and which moves along the Z-axis direction; a plano-convex cylindrical mirror 10, which is arranged between the first laser 6 and the crystal 12 on an optical path close to the first laser 6; a circular lens 9, which is arranged between the first laser 6 and the plano-convex cylindrical mirror 10; a detector 11, which is arranged at the position of the crystal 12, and which is used to detect scattered light from a defect point of the crystal 12.

[0059] Embodiment 1:

[0060] In this embodiment, the rotating device is used to drive the crystal 12 to rotate, and the crystal 12 is provided on the rotating device; the rotating device includes a rotating motor 14 and a rotating bracket 13, wherein the rotating motor 14 is used to drive the rotating bracket 13 to rotate, and the rotating motor 14 is fixed on the base; the rotating bracket 13 is used to support the crystal 12 and drive the crystal 12 to rotate, the rotating bracket 13 is connected to the rotating motor 14, and the rotating bracket 13 drives the crystal 12 to rotate around the central axis of the crystal 12.

[0061] In this embodiment, the frame plays a supporting role, and the frame is erected above the rotating device; the frame includes: a first fixed platform 1, a second fixed platform 2 and a third fixed platform 3, wherein the second fixed platform 2 is used to support the first stepper motor 4, wherein the second fixed platform 2 is provided with a guide rail that cooperates with the first stepper motor 4, for realizing that the first stepper motor 4 drives the second laser 7 to move along the X-axis direction, and the second fixed platform 2 is horizontally arranged; the first fixed platform 1 is used to support the first laser 6, the first fixed platform 1 is vertically arranged, and the first fixed platform 1 is perpendicular to the second fixed platform 2; the first laser 6 is arranged on the first fixed platform 1, the first stepper motor 4 is arranged on the second fixed platform 2, and the first stepper motor 4 is connected to the second laser 7, and the second stepper motor 5 is arranged on the third fixed platform 3, and the second stepper motor 5 is connected to the third laser 8. The third fixed platform 3 is used to support the second stepper motor 5. The third fixed platform 3 is provided with a guide rail that cooperates with the second stepper motor 5. The second stepper motor 5 is used to drive the third laser 8 to move along the Z-axis direction. The third fixed platform 3 is vertically arranged, the third fixed platform 3 is perpendicular to the second fixed platform 2, and the third fixed platform 3 and the first fixed platform 1 are parallel to each other.

[0062] In this embodiment, the first laser 6 is used to irradiate the crystal 12 to measure the rotation angle, wherein the first laser 6 cooperates with the circular lens 9 and the plano-convex cylindrical mirror 10 to form a vertical laser blade to complete the measurement of the crystal 12 defects on all circumferential surfaces of the crystal 12, and the circular lens 9 plays a collimating role. The first laser 6 is set on one side of the frame, and the first laser 6 irradiates horizontally toward one side of the crystal 12. The first laser 6 is set perpendicular to the first fixed platform 1. The crystal 12 is placed at the axis position of the rotating bracket 13, and the rotation angular velocity is set. Rotate along the central axis of the crystal 12, the first laser 6 emits laser light, which is collimated and calibrated, and then forms a vertical laser light knife through the optical scribing device. The vertical laser light knife irradiates the crystal 12. When there is no defect in the crystal 12, the laser will pass through the crystal 12. When a defect in the crystal 12 is detected, scattered light will be emitted from the defect position. The detector 11 receives the scattered light signal, then stops the rotation of the rotating bracket 13, turns off the first laser 6, and records the rotation time T1 of the crystal 12. According to the rotation angular velocity V1 and the rotation time T1, the rotation angle θ1 is calculated.

[0063]

[0064] in, Rotation angle; Rotation time; V1 rotation angular velocity.

[0065] In this embodiment, the second laser 7 is used to irradiate the crystal 12 to measure the position and size of the defect point in the X-axis direction, wherein the size includes the position size and size size of the defect point. The second laser 7 is arranged at the upper end of the frame, and the second laser 7 irradiates vertically downward, and the second laser 7 moves along the X-axis direction. The second laser 7 is started, and moves along the negative direction of the X-axis on the second fixed platform 2 at the first moving speed V2. The timing starts when the laser emitted by the second laser 7 starts to contact the edge of the crystal 12. When the crystal 12 defect is detected, the defect position will emit scattered light. At this time, the first moving time T2 is recorded, and the first displacement X1 is calculated based on the first time.

[0066]

[0067] Wherein, X1 is the first displacement; is the first moving speed; T2 is the first Moving time;

[0068] The second laser 7 scans the crystal 12 along the second fixed platform 2 and scans m defect points. The first displacement of the m defect points is recorded as a set A1, A1={X1, X2, X3...X m}.

[0069] In this embodiment, the third laser 8 is used to irradiate the crystal 12 to measure the position and size of the defect point in the Z-axis direction, wherein the size includes the position size and size size of the defect point. The third laser 8 is set on the other side of the frame, and the third laser 8 irradiates horizontally toward one side of the crystal 12. The third laser 8 moves along the Z-axis direction. After the second laser 7 finishes scanning, the second laser 7 is turned off, and the third laser 8 is turned on. The third laser 8 moves on the third fixed platform 3 along the positive direction of the Z-axis at a second moving speed V2. The timing starts when the laser emitted by the third laser 8 starts to contact the edge of the crystal 12. When the crystal 12 is monitored, the defect position will emit scattered light. At this time, the second moving time T3 is recorded, and the second displacement Z1 is calculated based on the second moving time.

[0070]

[0071] in, is the second displacement; is the second moving speed; For the second Moving time;

[0072] The third laser 8 scans the crystal 12 along the third fixed platform 3 and scans n defect points. The second displacements of the n defect points are recorded as a set B2, where B2={Z1, Z2, Z3...Z n}.

[0073] After the third laser 8 finishes scanning, the third laser 8 is turned off, the first laser 6 is turned on, and after stabilization, the rotating bracket 13 is turned on, and the above monitoring steps 1, 2 and 3 are repeated; the first laser 6 finishes scanning the crystal 12, and p irradiated surfaces are found to have defects, and the rotation angle is recorded as a set C, C={θ1, θ2, θ3.....θ p}, the corresponding second laser 7 scans the defect point data set A={A1, A2, A3...A p}, the corresponding data set B of the third laser 8 scanning defect points = {B1, B2, B3.....B p}; Perform three-dimensional modeling on the crystal 12, project the data set into a three-dimensional coordinate system, and obtain a point, line, surface or volume defect position and size model of the crystal 12.

[0074] In this embodiment, the plano-convex cylindrical mirror 10 is used to cooperate with the first laser 6 and the circular lens 9 to form a numerical laser blade. The plano-convex cylindrical mirror 10 is arranged between the first laser 6 and the crystal 12 on the optical path close to the first laser 6 .

[0075] In this embodiment, the circular lens 9 is used to cooperate with the first laser 6 and the plano-convex cylindrical mirror 10 to form a numerical laser knife surface. The circular lens 9 is arranged between the first laser 6 and the plano-convex cylindrical mirror 10. The laser knife is a vertical surface. The present invention first scans the surface and then performs two-dimensional point scanning on the two-dimensional surface.

[0076] In this embodiment, the detector 11 is used to detect the defect point of the crystal 12. The detector 11 is set at the position of the crystal 12. The detector 11 is used to detect the scattered light of the defect point of the crystal 12, and then obtain the position and size of the defect point.

[0077] Embodiment 2:

[0078] Based on Example 1, another embodiment of the present invention provides a measurement method of a crystal defect position size measurement system, including:

[0079] Step 1: Start the first laser 6, drive the crystal 12 to rotate through the rotating device, and detect in real time through the detector 11. When the detector 11 detects scattered light, it stops rotating, and the rotation angle is measured by the rotation angular velocity and rotation time;

[0080] Step 2: turn off the first laser 6, start the second laser 7, move along the X-axis direction through the second laser 7, stop moving when the detector 11 detects scattered light, measure the first displacement of all defect points in sequence through the first moving speed and the first moving time, and obtain the first position points of all defect points;

[0081] Step 3: turn off the second laser 7, start the third laser 8, move along the Z-axis direction through the third laser 8, stop moving when the detector 11 detects scattered light, measure the second displacement of all defect points in sequence through the second moving speed and the second moving time, and obtain the second position points of all defect points;

[0082] Step 4: turn off the third laser 8, start the first laser 6, repeat steps 1, 2 and 3, measure the first position point and the second position point of all surface defect points, and obtain the positions of all surface defect points through the first position point and the second position point.

[0083] Specifically: In step 1, the crystal 12 is placed at the axis of the rotating bracket 13, the central axis of the crystal 12 coincides with the axis of the rotating bracket 13, and the rotation angular velocity is Rotate along the central axis of the crystal 12, the first laser 6 emits laser light, which is collimated and calibrated, and then forms a vertical laser light knife through the optical scribing device. The vertical laser light knife irradiates the crystal 12. When there is no defect in the crystal 12, the laser will pass through the crystal 12. When a defect in the crystal 12 is detected, scattered light will be emitted from the defect position. The detector 11 receives the scattered light signal, then stops the rotation of the rotating bracket 13, turns off the first laser 6, and records the rotation time T1 of the crystal 12. According to the rotation angular velocity V1 and the rotation time T1, the rotation angle θ1 is calculated.

[0084]

[0085] in, Rotation angle; Rotation time; V1 rotation angular velocity.

[0086] Specifically, in step 2, the second laser 7 is started and moves along the negative direction of the X-axis on the second fixed platform 2 at a first moving speed V2. Timing starts when the laser emitted by the second laser 7 starts to contact the edge of the crystal 12. When a defect in the crystal 12 is detected, scattered light will be emitted from the defect position. At this time, the first moving time T2 is recorded, and the first displacement X1 is calculated based on the first time.

[0087]

[0088] Wherein, X1 is the first displacement; is the first moving speed; T2 is the first Moving time;

[0089] The second laser 7 scans the crystal 12 along the second fixed platform 2 and scans m defect points. The first displacement of the m defect points is recorded as a set A1, A1={X1, X2, X3...X m}.

[0090] Specifically, in step 3, the second laser 7 finishes scanning, the second laser 7 is turned off, and the third laser 8 is turned on. The third laser 8 moves on the third fixed platform 3 along the positive direction of the Z axis at a second moving speed V2. The timing starts when the laser emitted by the third laser 8 starts to contact the edge of the crystal 12. When the crystal 12 is monitored, the defect position will emit scattered light. At this time, the second moving time T3 is recorded, and the second displacement Z1 is calculated according to the second moving time.

[0091]

[0092] in, is the second displacement; is the second moving speed; For the second Moving time;

[0093] The third laser 8 scans the crystal 12 along the third fixed platform 3 and scans n defect points. The second displacements of the n defect points are recorded as a set B2, where B2={Z1, Z2, Z3...Z n}.

[0094] Specifically, in step 4, after the third laser 8 finishes scanning, the third laser 8 is turned off, the first laser 6 is turned on, and after stabilization, the rotating bracket 13 is turned on, and the above monitoring steps 1, 2 and 3 are repeated;

[0095] The first laser 6 scans the crystal 12 and obtains p irradiated surfaces with defects. The rotation angles are recorded as a set C, C = {θ1, θ2, θ3.....θ p}, the corresponding second laser 7 scans the defect point data set A={A1, A2, A3...A p}, the corresponding data set B of the third laser 8 scanning defect points = {B1, B2, B3.....B p};

[0096] The crystal 12 is three-dimensionally modeled, and the position and size data set is projected into a three-dimensional coordinate system to obtain a point, line, surface or volume defect position and size model of the crystal 12.

[0097] Example 3

[0098] Based on embodiments 1 and 2, this embodiment can be used to measure the size of the crystal 12, such as Figure 4 and 5 , the detector 11 collects the timing mark of the scattered light of the second laser 7, that is, the timing is started at point A, passing through points B and C in sequence, and the timing mark is stopped when the scattered light disappears. The size of the defect point in the X-axis direction is calculated through the moving speed and timing time difference of the second laser 7. The detector 11 collects the timing mark of the scattered light of the third laser 8, that is, the timing is started at point D, passing through points E and F in sequence, and the timing mark is stopped when the scattered light disappears. The moving speed and timing time difference of the third laser 8 are used to calculate the size of the defect point in the Z-axis direction, and then the size of the defect point is obtained, and the size set of all defect points is obtained in sequence. The size data set is projected into a three-dimensional coordinate system to obtain a size model of 12 points, lines, surfaces or volumes of crystal defects.

[0099] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0100] The crystal 12 is driven to rotate by a rotating device, and the detector 11 detects in real time. When the detector 11 detects scattered light, the rotation is stopped, and the rotation angle is measured by the rotation angular velocity and the rotation time; by turning off the first laser 6 and starting the second laser 7, the second laser 7 is moved along the X-axis direction, and the detector 11 stops moving when it detects scattered light. The first displacement of all defect points is measured in sequence by the first moving speed and the first moving time, and the first position points of all defect points are obtained; by turning off the second laser 7 and starting the third laser 8, the third laser 8 is moved along the Z-axis direction, and the detector 11 stops moving when it detects scattered light. The second displacement of all defect points is measured in sequence by the second moving speed and the second moving time, and the second position points of all defect points are obtained; by turning off the third laser 8 and starting the first laser 6, the first position points and the second position points of all surface defect points are repeatedly measured, and the positions of all surface defect points are obtained by the first position points and the second position points, thereby measuring the positions and position sizes of the defect points of the crystal 12. The position and size data set is projected into a three-dimensional coordinate system to obtain a crystal 12-point, line, surface or volume defect position and position and size model.

[0101] The detector 11 collects the timing mark of the scattered light of the second laser 7, and stops the timing mark when the scattered light disappears. The size of the defect point in the X-axis direction is calculated through the moving speed and timing time difference of the second laser 7. The detector 11 collects the timing mark of the scattered light of the third laser 8, and stops the timing mark when the scattered light disappears. The size of the defect point in the Z-axis direction is calculated through the moving speed and timing time difference of the third laser 8, and then the size of the defect point is obtained, and the size set of all defect points is obtained in turn. The size data set is projected into a three-dimensional coordinate system to obtain a size model of 12 point, line, surface or volume defects in the crystal.

[0102] It can realize the rapid location of crystal 12 defects and the measurement of their sizes, provide guidance for the precision cutting and grinding process of crystal 12, improve the quality of crystal 12, and reduce crystal 12 loss.

[0103] The metrology in the present invention means calculation measurement, which uses a laser device to measure the size and then calculates the displacement.

[0104] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A system for measuring the position and size of crystal defects, characterized in that: include: A rotating device, wherein a crystal is provided on the rotating device; A frame, wherein the frame is mounted above the rotating device; A first laser, which is arranged on one side of the frame and irradiates horizontally toward one side of the crystal; A second laser, wherein the second laser is disposed at the upper end of the frame, the second laser irradiates vertically downward, and the second laser moves along the X-axis direction; A third laser, the third laser is arranged on the other side of the frame, the third laser irradiates horizontally toward one side of the crystal, and the third laser moves along the Z-axis direction; A plano-convex cylindrical mirror, which is arranged between the first laser and the crystal on an optical path close to the first laser; A circular lens, wherein the circular lens is arranged between the first laser and the plano-convex cylindrical mirror; A detector is arranged at a crystal position and is used to detect scattered light from a crystal defect point.

2. The crystal defect position and size measurement system according to claim 1, characterized in that: The rotating device comprises: A rotating motor, the rotating motor is fixed on a base; A rotating bracket is connected to a rotating motor.

3. The crystal defect position size measurement system according to claim 1, characterized in that: The frame comprises: A second fixed platform, wherein the second fixed platform is arranged horizontally; A first fixed platform, the first fixed platform is vertically arranged, and the first fixed platform is perpendicular to the second fixed platform; The third fixed platform is vertically arranged, the third fixed platform is perpendicular to the second fixed platform, and the third fixed platform is parallel to the first fixed platform.

4. The crystal defect position size measurement system according to claim 3, characterized in that: A first laser is arranged on the first fixed platform, a first stepper motor is arranged on the second fixed platform, and the first stepper motor is connected to the second laser; a second stepper motor is arranged on the third fixed platform, and the second stepper motor is connected to the third laser.

5. The crystal defect position size measurement system according to claim 2, characterized in that: The rotating bracket drives the crystal to rotate around the central axis of the crystal.

6. A measurement method of a crystal defect position size measurement system, based on the crystal defect position size measurement system according to any one of claims 1 to 5, characterized in that: include: Step 1: Start the first laser, drive the crystal to rotate through the rotating device, and detect it in real time through the detector. When the detector detects scattered light, stop rotating, and measure the rotation angle through the rotation angular velocity and rotation time; Step 2: turn off the first laser, start the second laser, move along the X-axis direction through the second laser, stop moving when the detector detects scattered light, measure the first displacement of all defect points in sequence through the first moving speed and the first moving time, and obtain the first position points of all defect points; Step 3: turn off the second laser, start the third laser, move along the Z-axis direction through the third laser, stop moving when the detector detects scattered light, measure the second displacement of all defect points in sequence through the second moving speed and the second moving time, and obtain the second position points of all defect points; Step 4: turn off the third laser, start the first laser, repeat steps 1, 2 and 3, measure the first position point and the second position point of all surface defect points, and obtain the positions of all surface defect points through the first position point and the second position point.

7. The measuring method of the crystal defect position and size measuring system according to claim 6, characterized in that: In step 1, the crystal is placed at the axis of the rotating bracket and rotated at an angular velocity. Rotate along the central axis of the crystal. The first laser emits laser light, which is collimated and calibrated, and then forms a vertical laser light knife through the optical scribing device. The vertical laser light knife irradiates the crystal. When there is no crystal defect, the laser will pass through the crystal. When a crystal defect is detected, scattered light will be emitted from the defect position. The detector receives the scattered light signal, stops the rotation of the rotating bracket, turns off the first laser, and records the crystal rotation time T1. According to the rotation angular velocity V1 and the rotation time T1, the rotation angle θ1 is calculated. in, Rotation angle; Rotation time; V1 rotation angular velocity.

8. The measuring method of the crystal defect position and size measuring system according to claim 6, characterized in that: In step 2, the second laser is started and moves along the negative direction of the X-axis on the second fixed platform at a first moving speed V2. Timing starts when the laser emitted by the second laser starts to contact the edge of the crystal. When a crystal defect is detected, scattered light is emitted from the defect position. At this time, the first moving time T2 is recorded, and the first displacement X1 is calculated based on the first time. , where X1 is the first displacement; is the first moving speed; T2 is the first moving time; The second laser scans the crystal along the second fixed platform to m defect points. The first displacement of the m defect points is recorded as set A1, A1={X1, X2, X3...X m }.

9. The measuring method of the crystal defect position and size measuring system according to claim 6, characterized in that: In step 3, after the second laser scan is completed, the second laser is turned off and the third laser is turned on. The third laser moves on the third fixed platform along the positive direction of the Z axis at a second moving speed V2. Timing starts when the laser emitted by the third laser starts to contact the edge of the crystal. When the crystal is monitored, the defect position will emit scattered light. At this time, the second moving time T3 is recorded, and the second displacement Z1 is calculated based on the second moving time. ,in, is the second displacement; is the second moving speed; is the second moving time; The third laser scans the crystal along the third fixed platform to n defect points. The second displacement of the n defect points is recorded as set B2, B2={Z1, Z2, Z3...Z n }.

10. The measuring method of the crystal defect position and size measuring system according to claim 6, characterized in that: In step 4, after the third laser scans, the third laser is turned off, the first laser is turned on, and after stabilization, the rotating bracket is turned on, and monitoring steps 1, 2, and 3 are repeated; The first laser scans the crystal and p irradiated surfaces are found to have defects. The rotation angles are recorded as a set C, C = {θ1, θ2, θ3.....θ p }, the corresponding second laser scan defect point data set A={A1, A2, A3...A p }, the corresponding data set B of the third laser scanning defect point = {B1, B2, B3.....B p }; The crystal is three-dimensionally modeled, and the data set is projected into a three-dimensional coordinate system to obtain a crystal point, line, surface or volume defect position and size model.

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