A chip welding protection jig

Abstract

The present invention discloses a chip welding protection jig, including a jig body, a fixed base disposed within the jig body, the fixed base having a first air passage therein that communicates with a fluid supply device; an adjustment disk, which is annular, disposed within the fixed base and capable of rotating about a first preset central axis; a fixed disk, within which multiple groups of air passage components are provided, the multiple groups of air passage components being rotationally symmetric about the first preset central axis, each group of air passage components including a number of third air passages that are evenly distributed about the first preset central axis as the rotation center; a detection component disposed on the fixed disk, the detection component being used to detect the temperature of the fluid flowing through the chip; and a control component disposed on the jig body. The jig of the present invention can adjust the air supply flow rate of the fluid supply device and the rotation angle of the adjustment disk according to the temperature value detected by the detection component.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor production equipment, and particularly to a wafer welding protection fixture. Background Art

[0002] Semiconductor advanced packaging, namely wafer-level advanced packaging, compared with the traditional packaging technology that cuts wafers into small chip units and then packages them one by one, wafer-level packaging refers to packaging and testing on the whole wafer. Advanced packaging is an important track in the direction of beyond Moore's Law. It can provide better compatibility and higher connection density, enabling the improvement of system integration not to be limited to the same chip. In the post-Moore era, chip manufacturing faces the dual challenges of physical limits and marginal improvement in economic benefits. Advanced packaging plays a more important role in the process of improving chip integration, electrical connection, and performance optimization, and all links of the industrial chain benefit from this round of technological innovation.

[0003] In the advanced packaging process of wafers, wafers generally need to go through processes such as ball grid array (BGA), ball bonding, baking, pressure welding, and cleaning. During this process, it is necessary to firmly fix the wafer in a specific position to prevent it from shifting or shaking during the welding process, thereby ensuring the welding quality. However, existing fixing devices usually adopt a simple mechanical clamping method, which may cause damage to the wafer surface and affect the performance and reliability of the wafer.

[0004] During the welding process, a large amount of heat will accumulate on the wafer surface. If the heat cannot be effectively dissipated, the accumulation of heat may cause wafer damage or a decrease in welding quality. At the same time, traditional fixing devices are not precise enough in controlling the flow rate and pressure of the fluid below the wafer and cannot be flexibly adjusted according to the actual welding situation, which will also affect the fixing effect of the wafer and the stability of welding.

[0005] In order to overcome the above defects, those skilled in the art actively carry out innovative research in order to create a wafer welding protection fixture. Summary of the Invention

[0006] In view of this, an embodiment of the present application provides a wafer welding protection fixture for fixing a wafer during the wafer welding process, including,

[0007] A fixture body,

[0008] A fixed base, the fixed base is arranged on the fixture body, and a first flow channel for conveying high-pressure fluid is arranged in the fixed base, and the first flow channel is communicated with a fluid supply device;

[0009] Adjusting disk, the adjusting disk is annular, the adjusting disk is arranged in the fixed base and can rotate around the first preset central axis, a plurality of second flow channels are arranged in the adjusting disk, and the plurality of second flow channels are rotationally symmetric about the first preset central axis. One end of the second flow channel communicates with the first flow channel, and the other end of the second flow channel is a first port, and the first port is located on the circumferential surface of the adjusting disk;

[0010] Fixed disk, a plurality of groups of flow channel components are arranged in the fixed disk, and the plurality of groups of flow channel components are rotationally symmetric about the first preset central axis. Each group of flow channel components includes a plurality of third flow channels evenly distributed around the first preset central axis as the rotation center. Each third flow channel has a second port and a third port. The cross-section of the second port is the same as that of the first port, and the third port is located on the upper surface of the fixed disk. The cross-sectional areas of the third ports of the plurality of groups of flow channel components are distributed in a sequence. By changing the rotation angle of the adjusting disk, the cross-sectional area of the third port of the third flow channel communicating with the second flow channel is changed. High-speed fluid is sprayed onto the lower surface of the wafer through the third port, and the flow rate of the fluid between the wafer and the fixed disk is increased to form a pressure difference between the upper and lower surfaces of the wafer, so that the wafer is fixed on the upper surface of the fixed disk;

[0011] Detection component, arranged on the fixed disk, the detection component is used to detect the temperature of the fluid flowing through the wafer;

[0012] Control component, arranged on the fixture body, the control component is used to adjust the gas supply flow rate of the fluid supply device and the rotation angle of the adjusting disk according to the temperature value detected by the detection component.

[0013] Further, the gas supply flow rate Q of the fluid supply device is: ;

[0014] Wherein, A is the sum of the cross-sectional areas of the third ports of each group of flow channel components, ρ is the density of the introduced fluid, P is the pressure difference between the upper and lower surfaces of the wafer, and Δ is the correction value of the fluid flow rate at the third port.

[0015] Further, a flow guiding component is arranged at the edge of the fixed disk to control the flow field of the fluid on the surface of the fixed disk, and the wafer is fixed at the center of the fixed disk by using the fluid flow field.

[0016] Further, the third flow channel is an arc-shaped structure, and the diameter of the third flow channel gradually decreases from the second port to the third port.

[0017] Further, the cross-sectional area of the third port is comprehensively determined according to the temperature of the fluid, the substrate type of the wafer, the thickness of the wafer, the diameter of the wafer, and the temperature value during wafer welding.

[0018] Furthermore, the detection component includes an intake pipeline, a buffer chamber, and a temperature measurement pipeline, and the temperature measurement pipeline is communicated with the intake pipeline through the buffer chamber.

[0019] Furthermore, the adjustment disk is driven in a non-contact manner.

[0020] Furthermore, a filtering component is provided in the intake pipeline.

[0021] Furthermore, a first annular groove is formed in the fixed base, the first flow channel is connected to the first annular groove, a second annular groove communicated with the second flow channel is formed in the side wall of the adjustment disk, the first annular groove and the second annular groove jointly form an annular fourth flow channel, and the fluid in the first flow channel flows into the second flow channel through the fourth flow channel.

[0022] Furthermore, the detection component further includes a temperature sensor disposed on the surface of the fixed disk.

[0023] The beneficial effects of the present invention are as follows:

[0024] First, by increasing the flow rate of the fluid between the wafer and the fixture, the atmospheric pressure between the lower surface of the wafer and the fixture is reduced, and the wafer is fixed by using the atmospheric pressure difference between the upper and lower surfaces of the wafer, that is, the wafer is fixed in a non-contact clamping manner, avoiding contaminating the wafer during the clamping process and preventing damage to the wafer caused by uneven local stress on the wafer during the clamping process.

[0025] Second, the fixture of the present invention blows the surface of the wafer with a high-speed fluid. While reducing the atmospheric pressure on the lower surface of the wafer, the high-speed fluid increases the flow of the fluid in contact with the wafer, and the purpose of wafer heat dissipation is achieved through the flow of the fluid. There is no need to provide an additional heat dissipation structure, which simplifies the structure of the fixture. At the same time, by controlling the fluid flow field, not only can the stability of the fixture for fixing the wafer be ensured, but also the uniformity of wafer heat dissipation can be improved.

[0026] Third, by establishing the mapping relationship between the cross-sectional area of the third port and the input fluid flow rate, when it is necessary to increase the cross-sectional area of the third port to increase the total amount of fluid flowing through the lower surface of the wafer, the input fluid flow rate is synchronously increased, so as to ensure that the fluid flow rate at the third port remains unchanged and the adsorption force of the fixture on the wafer is a fixed value.

[0027] Fourth, the adjustment disk and the fixed base are driven in a non-contact manner. During the rotation of the adjustment disk, no pollutants will be introduced into the entire fixture due to the rotation of the driving mechanism, thus avoiding contaminating the wafer when the fluid flows through the wafer.

[0028] Additional aspects and advantages of the present application will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present application. Description of the Drawings

[0029] The drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0030] Figure 1 is a schematic structural diagram of the present invention;

[0031] Figure 2 is a schematic diagram of the fluid flow direction when the fixed disk fixes the wafer in the embodiment of the present invention;

[0032] Figure 3 is a schematic structural diagram of the fixed disk of the present invention;

[0033] Figure 4 is a horizontal cross-sectional view when the adjustment disk and the fixed base are installed in the embodiment of the present invention;

[0034] Figure 5 is a top view of the fixed disk in the embodiment of the present invention;

[0035] Figure 6 is a vertical cross-sectional view when the adjustment disk and the fixed base are installed in the embodiment of the present invention;

[0036] Figure 7 is a schematic structural diagram of the detection component of the present invention;

[0037] The reference numerals of each part in the drawings are as follows:

[0038] 1, fixture body; 2, fixed base; 201, first flow channel; 202, first annular groove; 3, adjustment disk; 301, second flow channel; 302, first port; 303, second annular groove; 4, fixed disk; 401, flow channel assembly; 40101, third flow channel; 40102, second port; 40103, third port; 402, diversion assembly; 5, first preset central axis rotation; 6, detection component; 601, intake pipeline; 602, buffer cavity; 603, temperature measurement pipeline; 604, filtering component; 605, temperature sensor; 7, permanent magnet; 8, electromagnet; 9, fourth flow channel;

[0039] W, wafer. Detailed Embodiments

[0040] Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided so that the present application can be more thoroughly understood and the scope of the present application disclosed can be fully conveyed to those skilled in the art.

[0041] In the following description, numerous specific details are given to provide a more thorough understanding of the present application. However, it will be apparent to one of ordinary skill in the art that the present application may be practiced without one or more of these details. In other instances, well-known features of some technologies are not described in order to avoid confusion with the present application; that is, not all features of the actual embodiments are described here, and the well-known functions and structures are not described in detail.

[0042] In the drawings, for clarity, the dimensions of layers, regions, elements, and their relative dimensions may be exaggerated. Like reference numerals denote like elements throughout.

[0043] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to", or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to", or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Thus, without departing from the teachings of the present application, the first element, component, region, layer, or portion discussed below may be referred to as the second element, component, region, layer, or portion. And when discussing the second element, component, region, layer, or portion, it does not imply that the present application necessarily has a first element, component, region, layer, or portion.

[0044] Spatial relationship terms such as "under", "below", "lower", "beneath", "above", "upper", etc. may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures with other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatial relationship terms are also intended to include different orientations of the device during use and operation. For example, if the device in the drawings is flipped, then an element or feature described as "under other elements" or "beneath them" or "below them" will be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "beneath" can include both the upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are to be interpreted accordingly.

[0045] The purpose of the terms used herein is only to describe specific embodiments and is not a limitation of the present application. As used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, specify the presence of the stated features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups. As used herein, the term "and / or" includes any and all combinations of the associated listed items.

[0046] To fully understand the present application, detailed steps and detailed structures will be presented in the following description to illustrate the technical solutions of the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may have other embodiments.

[0047] An embodiment of the present application provides a wafer welding protection fixture, as Figures 1 to 5 shown, for fixing a wafer during the process of wafer W welding, characterized by comprising:

[0048] A fixture body 1,

[0049] A fixed base 2, the fixed base is disposed on the fixture body, and a first flow channel for conveying high-pressure fluid is disposed inside the fixed base, and the first flow channel 201 communicates with a fluid supply device (not shown, which can be disposed at any position of the body);

[0050] Adjusting disk 3, the adjusting disk is annular, the adjusting disk is arranged in the fixed base and can rotate around the first preset central axis, a plurality of second flow channels 301 are arranged in the adjusting disk, and the plurality of second flow channels are rotationally symmetric about the first preset central axis 5. One end of the second flow channel is communicated with the first flow channel, and the other end of the second flow channel is a first port 302, and the first port is located on the circumferential surface of the adjusting disk;

[0051] Fixed disk 4, a plurality of groups of flow channel assemblies are arranged in the fixed disk, and the plurality of groups of flow channel assemblies 401 are rotationally symmetric about the first preset central axis. Each group of flow channel assemblies includes a plurality of third flow channels 40101 evenly distributed around the first preset central axis as the rotation center. Each third flow channel has a second port 40102 and a third port 40103. The cross section of the second port is the same as that of the first port, and the third port is located on the upper surface of the fixed disk. The cross-sectional areas of the third ports of the plurality of groups of flow channel assemblies are arranged in a sequence. By changing the rotation angle of the adjusting disk, the cross-sectional area of the third port of the third flow channel communicated with the second flow channel is changed. High-speed fluid is sprayed onto the lower surface of the wafer through the third port, and the flow rate of the fluid between the wafer and the fixed disk is increased to form a pressure difference between the upper and lower surfaces of the wafer, so that the wafer is fixed on the upper surface of the fixed disk;

[0052] Detection component 6, arranged on the fixed disk, and the detection component is used to detect the temperature of the fluid flowing through the wafer;

[0053] Control component (not shown, can be set at any position of the body), arranged on the fixture body, and the control component is used to adjust the air supply flow rate of the fluid supply device and the rotation angle of the adjusting disk according to the temperature value detected by the detection component.

[0054] In this embodiment, the fixed base is cylindrical, the central axis of the fixed base is the first preset central axis, the center line of the first flow channel coincides with the first preset central axis, a convex portion is arranged on the upper surface of the fixed base, the convex portion is cylindrical, a concave portion is arranged on the lower surface of the fixed disk, and the convex portion and the concave portion together form a sealed chamber for placing the adjusting disk. The air outlet end of the first flow channel is located on the outer peripheral surface of the convex portion, both ends of the second flow channel are located on the inner surface and the outer surface of the adjusting disk respectively, the second port of the third flow channel is located on the inner surface of the fixed disk, the adjusting disk is sleeved on the convex portion and the inner surface of the adjusting disk fits with the outer peripheral surface of the convex portion, and the outer surface of the adjusting disk fits with the inner surface of the fixed disk, so that the fluid in the first flow channel flows into the third flow channel through the second flow channel.

[0055] The temperature range of the fluid flowing through the wafer is set according to the number of flow channel components and the cross-sectional area of ​​the third port, and the appropriate flow channel component is matched according to the temperature value of the fluid flowing through the wafer detected by the detection component. The corresponding flow channel component through which the fluid passes is adjusted to flow out by rotating the component, and the air supply flow rate of the fluid supply device is controlled according to the mapping relationship between the air supply flow rate of the fluid supply device and the cross-sectional area of ​​the third port, so as to achieve the heat dissipation of the wafer while ensuring the stability of the fixture fixing the wafer.

[0056] On the one hand, in this embodiment, a high-speed fluid is introduced into the first flow channel, and the fluid is guided by the flow channel inside the fixture and then sprayed between the wafer and the fixed plate. By increasing the flow rate of the fluid in this area, a low-pressure area is formed between the wafer box and the fixed plate, so that the wafer is adsorbed on the surface of the fixed plate. Compared with the traditional suction cup adsorption method, when the fixed plate of the method of this embodiment adsorbs the wafer, there is a fluid layer composed of a high-speed flowing fluid between the wafer and the fixed plate. Due to the existence of the fluid layer, the wafer and the fixed plate are not in direct contact, thereby effectively avoiding the contamination of the wafer by the fixed plate. Furthermore, the device of the present invention uses atmospheric pressure to fix the wafer. Compared with other grasping methods, the force on the wafer is more uniform, so it is more able to avoid wafer damage caused by uneven force in local areas of the wafer. At the same time, due to the surface averaging effect of the fluid, even if the lower surface of the wafer is uneven (there are raised electronic components or process pits) due to factors such as processing technology or the installation of other electronic components, the force on the wafer surface is evenly distributed. Therefore, using this fixture to fix the wafer can ensure that the force on the wafer surface is uniform while effectively preventing the electronic components at the bottom of the wafer from being damaged due to squeezing during the clamping process.

[0057] On the other hand, when the high-speed fluid flows through the surface of the wafer, it will exchange heat with the wafer, thereby taking away the heat generated by welding on the surface of the wafer. The high-speed fluid at the bottom of the wafer can fix the wafer while dissipating the heat of the wafer. Therefore, there is no need to set up additional wafer heat dissipation components, simplifying the structure of the entire fixture.

[0058] It can be understood that in this embodiment, the temperature of the fluid flowing through the wafer is detected, and the cross-sectional area of ​​the third port is adjusted according to the detection result to control the total amount of fluid flowing through the wafer surface, thereby controlling the heat dissipation effect on the wafer surface. At the same time, a mapping relationship between the cross-sectional area of ​​the third port and the air supply flow rate of the fluid supply device is established, and the air supply flow rate of the fluid supply device is adjusted according to the cross-sectional area of ​​the third port. While changing the cross-sectional area of ​​the third port, the fluid flow rate at the third port is ensured to remain unchanged, thereby ensuring the constancy of the force of the fixed plate on the wafer and improving the stability of the fixture.

[0059] In the above embodiments, the number of the second flow channels is 10 groups, and each group of flow channel components includes 10 third flow channels, and the second flow channels correspond to the third flow channels one by one. By rotating the adjustment disk, the second flow channels are communicated with the flow channel components corresponding to the third ports with different cross-sectional areas, so as to achieve the purpose of changing the total amount of fluid flowing through the wafer surface.

[0060] In a specific embodiment, the adjustment disk has 3 groups of flow channel components, and the cross-sectional areas of the third ports of the 3 groups of flow channel components are A, B, and C respectively, and A, B, and C are in an arithmetic progression from small to large. Correspondingly, the detection temperature range of the detection component is divided into 3 intervals, that is, when the detection temperature is less than 50 °C, it corresponds to the flow channel component with a cross-sectional area of A, when it is between 50 °C and 80 °C, it corresponds to the flow channel component with a cross-sectional area of B, and when the detection temperature is greater than 80 °C, it corresponds to the flow channel component with a cross-sectional area of C. At the same time, it is set that the gas supply flow rate of the gas supply component when it is communicated with the flow channel component with a cross-sectional area of A is Q1, the gas supply flow rate of the gas supply component when it is communicated with the flow channel component with a cross-sectional area of B is Q2, and the gas supply flow rate of the gas supply component when it is communicated with the flow channel component with a cross-sectional area of C is Q3.

[0061] In the above embodiments, the areas corresponding to A, B, and C are 0.001 m 2 、0.0015 m 2 、0.002 m 2 .

[0062] In the above embodiments, the flow rates corresponding to Q1, Q2, and Q3 are 10 L / s, 15 L / s, and 20 L / s respectively.

[0063] In an alternative embodiment, the third flow channel is an arc structure, and the diameter of the third flow channel gradually decreases from the second port to the third port.

[0064] It can be understood that since one end of the third flow channel is arranged on the inner surface of the fixed disk and the other end is arranged on the upper surface of the fixed disk, the plane where the second port is located is perpendicular to the plane where the third port is located. By setting the third flow channel as an arc structure, the fluid resistance of the third flow channel can be effectively reduced, and the influence of the fluid resistance on the fluid velocity at the third port can be avoided, so as not to affect the fixing effect of the fixed disk on the wafer. On the other hand, since the fluid velocity at the third port determines the fixing effect of the fixed disk on the wafer, when the fluid velocity at the third port is constant, the smaller the cross-sectional area of the third port, the smaller the flow rate of the fluid required to be provided by the fluid supply device. The structure in which the diameter of the third flow channel gradually decreases from the second port to the third port can reduce the fluid resistance of the third flow channel and at the same time reduce the demand for the supply capacity of the fluid supply device by the entire fixture, and also reduce the consumption of the fluid required to fix the wafer, which is beneficial to reducing the maintenance cost of the fixture and improving the market competitiveness of the fixture.

[0065] In an alternative embodiment, the jig includes a plurality of fixing plates, and the cross-sectional areas of the third ports corresponding to the third flow channels in different fixing plates are different. When performing a welding operation on a wafer, the user can select a fixing plate with a third port cross-sectional area of a different size.

[0066] In an alternative embodiment, the cross-sectional area of the third port is comprehensively determined according to the temperature of the fluid, the substrate type of the wafer, the thickness of the wafer, the diameter of the wafer, and the temperature value during wafer welding.

[0067] It can be understood that when the flow rate of the fluid at the third port is constant, the cross-sectional area of the third port determines the total flow rate of the fluid flowing through the bottom of the wafer per unit time. When the external influencing factors remain unchanged, the larger the cross-sectional area of the third port, the greater the total flow rate of the fluid flowing through the bottom of the wafer per unit time, and the better the heat dissipation effect of the wafer.

[0068] In this embodiment, the substrate type of the wafer, the thickness of the wafer, the diameter of the wafer, and the temperature during wafer welding determine the maximum temperature that the surface of the wafer can withstand during welding. The higher the maximum temperature that the surface of the wafer can withstand during welding, the greater the temperature difference between the surface of the wafer and the fluid, the better the heat dissipation effect of the fluid, and the smaller the total flow rate of the fluid flowing through the bottom of the wafer per unit time required during wafer welding, that is, the smaller the cross-sectional area of the third port.

[0069] Similarly, the lower the temperature of the fluid, the lower the requirement for the cross-sectional area of the third port.

[0070] Therefore, the cross-sectional area of the third port is jointly determined by the temperature of the fluid, the type of the wafer substrate, the thickness of the wafer, the diameter of the wafer, and the temperature value during wafer welding.

[0071] In an alternative embodiment, the high-speed fluid is a gas or a liquid.

[0072] Specifically, the gas can be a clean and dry compressed gas, i.e., CDA, and the liquid can be a coolant with good electrical insulation properties such as a fluorinated liquid.

[0073] In an alternative embodiment, the gas supply flow rate Q of the fluid supply device is: ;

[0074] where A is the sum of the cross-sectional areas of the third ports of each group of flow channel components, ρ is the density of the introduced fluid, P is the pressure difference between the upper and lower surfaces of the wafer, and Δ is the correction value of the fluid flow rate at the third port.

[0075] It should be noted that in this embodiment, the pressure difference P between the upper and lower surfaces of the wafer is determined by the weight of the wafer body and the force required to fix the wafer. Therefore, when the wafer to be welded is determined, the pressure difference P between the upper and lower surfaces of the wafer is a constant. When the type of fluid introduced is determined, the influence of other factors on the density of the fluid can be ignored, and the density ρ of the introduced fluid is also a constant. Therefore, it can be understood that the air supply flow rate Q of the fluid supply device is linearly related to the cross-sectional area of ​​the third port. At the same time, due to the resistance inside the fixture, the flow rate of the fluid at the third port will be less than the theoretical value, and the flow rate of the fluid is corrected by Δ to improve the accuracy of the air supply flow rate.

[0076] In an optional embodiment, P is 60Pa and ρ is 1.2kg / m 3 .

[0077] In an optional embodiment, the adjustment disk is driven in a non-contact manner.

[0078] It is understandable that, since both ends of the adjustment disk are open structures, there is a risk of contaminants entering the flow channel at the connection between the adjustment disk and the fixed disk and the fixed base. Therefore, if a conventional contact drive is used, in the process of driving the adjustment disk to rotate, the contaminants generated by the drive mechanism are easy to enter the fluid and cause contamination of the wafer through the contact between the fluid and the wafer. This embodiment uses a non-contact drive method to prevent the contaminants introduced by the drive mechanism from entering the fluid.

[0079] In the above embodiment, the adjusting disk is driven to rotate by a magnetic field. Specifically, by arranging a permanent magnet 7 in the adjusting disk and setting an electromagnet in the fixed base, the rotation angle of the adjusting disk is controlled by the change of the magnetic field, so that the first port is connected to the specific second port. Those skilled in the art can determine the installation positions of the electromagnet and the permanent magnet according to actual conditions, as long as the above effect can be achieved, and the installation positions of the electromagnet and the permanent magnet are not specifically limited here.

[0080] like Figure 6 As shown, in an optional embodiment, a first annular groove 202 is provided in the fixed base, the first flow channel is connected to the first annular groove, a second annular groove 303 connected to the second flow channel is provided on the side wall of the adjusting disk, the first annular groove and the second annular groove together form an annular fourth flow channel 9, and the fluid in the first flow channel flows into the second flow channel through the fourth flow channel.

[0081] It is understandable that in order to ensure the airtightness when the first flow channel, the second flow channel and the third flow channel are connected and to reduce the resistance of the fluid in the flow channel, higher requirements are placed on the processing and assembly accuracy of the flow channel, which invisibly increases the manufacturing cost of the fixture.

[0082] In this embodiment, an annular fourth flow channel is provided between the first flow channel and the second flow channel. The fourth flow channel can play a role in fluid transfer between the first flow channel and the second flow channel. No matter what angle the adjustment disc rotates to, the second flow channel can communicate with the fourth flow channel, thus solving the requirements for high processing accuracy and installation accuracy.

[0083] In a better embodiment, a rubber part is provided between the first annular groove and the second annular groove. Annular holes are opened on both sides of the rubber part to ensure the communication between the first flow channel and the second flow channel, and the airtightness of the entire fixture can be improved by adding the rubber part.

[0084] As Figure 3 shown, in an alternative embodiment, a flow guiding assembly 402 is provided at the edge of the fixed disc. The flow field of the fluid on the surface of the fixed disc is controlled by the flow guiding assembly, and the wafer is fixed at the center of the fixed disc by using the fluid flow field.

[0085] It can be understood that the fixed disc can only achieve the purpose of fixing the wafer on its surface. During the wafer welding process, the wafer may be subjected to forces on the horizontal plane. If a limiting part is used to limit the movement of the wafer, there will still be problems such as wafer contamination and local stress. In this embodiment, the fluid overflowing between the wafer and the fixed disc is utilized, and the flow field of the fluid is optimized twice by the flow guiding assembly, so as to realize the limitation of the movement of the wafer on the horizontal plane by using the flow field and achieve the purpose of limiting the wafer.

[0086] It should be noted that those skilled in the art can select the structure of the flow guiding assembly according to the actual situation, as long as the above effects can be achieved. The structure of the flow guiding assembly is not specifically limited here.

[0087] As Figure 7 shown, in an alternative embodiment, the detection assembly includes an air inlet pipeline 601, a buffer chamber 602 and a temperature measurement pipeline 603. The temperature measurement pipeline is communicated with the air inlet pipeline through the buffer chamber.

[0088] In this embodiment, the fluid flowing through the wafer is pumped into the air inlet pipeline by a pump body and stays in the buffer chamber. After its state becomes relatively stable, it flows into the temperature measurement pipeline for detection, and the temperature of the fluid is obtained in the temperature measurement pipeline.

[0089] It should be noted that since the temperature of the fluid fluctuates greatly, by setting the buffer chamber, the temperature of the fluid in the buffer chamber is evenly distributed, thereby improving the accuracy of detection.

[0090] In an alternative embodiment, the air inlet pipeline is provided with a plurality of branches, and the ports of the branches are evenly distributed around the wafer.

[0091] It can be understood that there are significant differences in the temperatures of the gases flowing in various directions on the lower surface of the chip. By obtaining the temperatures of the gases in multiple orientations and thus obtaining the average value of the fluid temperature, the accuracy of detection can be improved.

[0092] In an alternative embodiment, a filter assembly 604 is provided in the intake pipeline.

[0093] It can be understood that since new pollutants may be generated during the welding process and these pollutants may enter the intake pipeline and affect the accuracy of detection, therefore, setting a filter assembly in the intake pipeline can filter the pollutants in the fluid, improve the accuracy of detection while increasing the lifespan of the detection assembly, and reduce the maintenance cost of the fixture.

[0094] It should be noted that the heat-resistant temperature of the chip is 200 - 260 °C. Generally speaking, the temperature span divided by the detection assembly is generally between 20 - 50 °C. The temperature difference between the fluid and the chip is much larger than the temperature difference between the fluid and the filter assembly. The temperature loss caused by the fluid flowing through the filter assembly can be ignored. Therefore, even if a part of the temperature is lost due to the fluid flowing through the filter assembly, it will not have a great impact on the selection of the final flow channel assembly.

[0095] As Figure 5 shown, in an alternative embodiment, the detection assembly further includes a temperature sensor 605 disposed on the surface of the fixed disk.

[0096] In this embodiment, the stability of the surface of the chip during the welding process is monitored by the temperature sensor disposed on the surface of the fixed disk, so as to jointly achieve double protection with the detection pipeline and improve the reliability of the overall fixture.

[0097] It should be understood that the above embodiments are all exemplary and do not cover all possible implementation manners included in the claims. Without departing from the scope of the present disclosure, various deformations and changes can be made based on the above embodiments. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form additional embodiments of the present application that may not be explicitly described. Therefore, the above embodiments only represent several implementation manners of the present application and do not limit the protection scope of the patent of the present application.

Claims

1. A wafer welding protection fixture, used to fix the wafer during wafer welding, characterized in that: include, The fixture body, A fixed base, the fixed base is arranged on the fixture body, a first flow channel for conveying high-pressure fluid is arranged in the fixed base, and the first flow channel is connected to a fluid supply device; An adjusting disk, wherein the adjusting disk is annular, the adjusting disk is disposed in the fixed base and can rotate with the first preset central axis as the rotation center, a plurality of second flow channels are disposed in the adjusting disk, the plurality of second flow channels are rotationally symmetrical with the first preset central axis, one end of the second flow channel is connected to the first flow channel, the other end of the second flow channel is a first port, and the first port is located on the circumferential surface of the adjusting disk; A fixed disk, wherein a plurality of flow channel assemblies are arranged in the fixed disk, the plurality of flow channel assemblies are rotationally symmetrical about a first preset central axis, each group of the flow channel assemblies includes a plurality of third flow channels uniformly distributed about the first preset central axis as the rotation center, each of the third flow channels has a second port and a third port, the cross section of the second port is consistent with the cross section of the first port, the third port is located on the upper surface of the fixed disk, the cross-sectional areas of the third ports of the plurality of flow channel assemblies are distributed in a series, the cross-sectional area of ​​the third port of the third flow channel connected to the second flow channel is changed by changing the rotation angle of the adjusting disk, a high-speed fluid is sprayed to the lower surface of the wafer through the third port, the flow velocity of the fluid between the wafer and the fixed disk is increased, a pressure difference is formed between the upper and lower surfaces of the wafer, and the wafer is fixed on the upper surface of the fixed disk; A detection component is disposed on the fixed plate, and the detection component is used to detect the temperature of the fluid flowing through the wafer; A control component is provided on the fixture body, and the control component is used to adjust the air supply flow rate of the fluid supply device and the rotation angle of the adjustment disk according to the temperature value detected by the detection component. The air supply flow rate Q of the fluid supply device is: ; Wherein, A is the sum of the cross-sectional areas of the third ports of each group of airway components, ρ is the density of the incoming fluid, P is the pressure difference between the upper and lower surfaces of the wafer, and Δ is the correction value of the fluid flow rate at the third port.

2. The wafer welding protection fixture according to claim 1, characterized in that: The edge of the fixed disk is provided with a flow guide component, through which the flow field of the fluid on the surface of the fixed disk is controlled, and the wafer is fixed at the center of the fixed disk by utilizing the fluid flow field.

3. The wafer welding protection fixture according to claim 1, characterized in that: The third flow channel is an arc-shaped structure, and the diameter of the third flow channel gradually decreases from the second port to the third port.

4. The wafer welding protection fixture according to claim 1, characterized in that: The cross-sectional area of ​​the third port is determined comprehensively according to the temperature of the fluid, the substrate type of the wafer, the thickness of the wafer, the diameter of the wafer, and the temperature value of the wafer during welding.

5. The wafer welding protection jig according to claim 1, characterized in that: The detection component comprises an air intake pipeline, a buffer cavity and a temperature measurement pipeline, and the temperature measurement pipeline is connected to the air intake pipeline through the buffer cavity.

6. The wafer welding protection jig according to claim 1, characterized in that: The adjusting disk is driven in a contactless manner.

7. The wafer welding protection jig according to claim 5, characterized in that: A filter assembly is arranged in the air intake pipeline.

8. The wafer welding protection jig according to claim 1, characterized in that: A first annular groove is provided in the fixed base, and the first flow channel is connected to the first annular groove. A second annular groove connected to the second flow channel is provided on the side wall of the adjusting disk. The first annular groove and the second annular groove together form an annular fourth flow channel. The fluid in the first flow channel flows into the second flow channel through the fourth flow channel.

9. The wafer welding protection jig according to claim 1, characterized in that: The detection component also includes a temperature sensor arranged on the surface of the fixed disk.

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