Stretchable field effect transistor with paper-cut structure and preparation method and application of stretchable field effect transistor

Abstract

The invention discloses a stretchable field effect transistor with a paper-cut structure and a preparation method and application of the stretchable field effect transistor. The method comprises the following steps: preparing a bottom gate top contact flexible metal oxide semiconductor field effect transistor on a flexible substrate by adopting sputtering and atomic layer deposition processes; the metal oxide semiconductor is annealed by laser and the field effect transistor is cut into stretchable paper-cut structures. The metal oxide semiconductor field effect transistor with the paper-cut structure shows high electrical properties and stretchability, and has excellent tensile stability. The stretchable metal oxide semiconductor field effect transistor prepared by the invention has wide application potential in the fields of stretchable display, wearable electronics, flexible sensors and the like.

Description

Technical Field

[0001] The present invention belongs to the field of stretchable field effect transistors, and specifically relates to a paper-kirigami structure stretchable field effect transistor and a preparation method and application thereof. Background Art

[0002] In modern integrated circuits, field effect transistors (FETs) account for more than 99%. FETs can play a huge role in circuits such as amplifiers, rectification, and signal modulation, and are one of the most important basic components in modern microelectronics. With the breakthrough of various technical barriers of electronic components, a variety of smart terminals have been popularized, especially stretchable and wearable electronic devices, which have received great attention in the industry and scientific research community because they are compatible with the dynamic mechanical strain of the human body and can realize a variety of electrical functions. This has great application potential in many emerging fields in the future, such as flexible displays, wearable human health detection equipment, electronic skin, and human-computer interaction. In order to realize truly large-scale autonomous wearable devices, the development of stretchable FETs is an indispensable link, and it is also one of the key technical barriers of stretchable electronics that urgently need to be overcome.

[0003] Metal oxide semiconductor FET devices have the characteristics of high frequency, simple driving, and good resistance to breakdown. Their application range covers communications, consumer electronics, automotive electronics, industrial control, computers and peripheral equipment, power management and other fields. However, traditional metal oxides are rigid, and the prepared devices can only withstand a strain of a few percentage points at most, which greatly limits their development in wearable electronic products. To this end, some researchers have designed stretchable structures (such as serpentine structures and pleated structures) to give rigid metal oxide semiconductor FET devices stretchability. However, the above two structures still have shortcomings in stretchable applications. For example, the serpentine structure uses rigid electrode connections, resulting in a relatively low coverage rate of functional components of electronic devices. It is not suitable for devices that require high-density pixelated arrays and has poor stability in multiple cycles of repeated stretching. In addition, the construction of the pleated structure uses an elastomeric substrate, and the stretchability is limited to the pre-strain applied to the elastomeric substrate. When the pre-strain level is exceeded, the structure will be destroyed, and the uneven surface it produces also limits its application in some flexible devices. More importantly, the metal oxide semiconductor active layer usually needs to undergo high-temperature annealing to improve the electrical performance of the device. This temperature exceeds the maximum temperature that most flexible substrates can withstand, and it takes a long time, which can easily lead to a large amount of heat accumulation, thereby damaging the relevant electrical performance of the device.

[0004] In contrast, laser annealing provides a practical solution for improving manufacturing efficiency, protecting device performance, and achieving local precision heating of materials. Although flexible metal oxide FETs using laser annealing have high electrical properties, it is still very challenging to design highly stretchable metal oxide FETs. Therefore, it is necessary to develop a stretchable metal oxide semiconductor FET device with good stretchability and excellent electrical properties on a flexible substrate, which can effectively solve the current problems of poor adaptability of metal oxide semiconductor FET devices to tensile deformation requirements and poor electrical performance. Summary of the invention

[0005] In order to solve the shortcomings and deficiencies of the prior art, the primary purpose of the present invention is to provide a method for preparing a paper-kirigami structure stretchable field effect transistor.

[0006] Another object of the present invention is to provide a paper-kirigami structure stretchable field effect transistor produced by the above-mentioned preparation method.

[0007] Another object of the present invention is to provide an application of the above-mentioned paper-kirigami structure stretchable field effect transistor.

[0008] The purpose of the present invention is achieved through the following technical solutions:

[0009] A method for preparing a paper-kirigami structure stretchable field effect transistor comprises the following steps:

[0010] (1) preparing a gate electrode on a substrate;

[0011] (2) preparing a dielectric layer on the electrode;

[0012] (3) preparing an active layer on the dielectric layer;

[0013] (4) annealing the active layer using a laser, and then preparing a source electrode and a drain electrode on the active layer to obtain a metal oxide semiconductor field effect transistor device with a bottom gate and a top contact;

[0014] (5) A laser is used to cut the transistor into a stretchable paper-cut structure to obtain a paper-cut structure stretchable field effect transistor.

[0015] Preferably, the substrate in step (1) is one of a polyethylene naphthalate (PEN) film, a polyimide (PI) film, a polyethylene terephthalate (PET) film and a polyethersulfone (PES) film.

[0016] Preferably, the gate electrode in step (1) is prepared by a sputtering process; the gate electrode is at least one of Ni, Au, Al, Ti and Nd; more preferably, it is one of Al / Nd alloy, Ni / Al alloy, Ni / Au alloy and Ti / Au alloy.

[0017] Preferably, the dielectric layer in step (2) is prepared by an atomic layer deposition process; the dielectric layer is one of SiO2, Al2O3 and HfO2, and the thickness of the dielectric layer is 20 to 100 nm.

[0018] Preferably, the active layer in step (3) is prepared by a sputtering process; the active layer is In-MO, wherein M is at least one of Ga, Zn, Sn, Nd, Pr and Sc, and the element ratio (i.e., the atomic number ratio) of In to M is 99:1 to 90:10, more preferably 98:2 to 90:10; the thickness of the active layer is 2 to 15 nm, more preferably 2 to 10 nm.

[0019] More preferably, the active layer in step (3) is one of In-Zn-Sn-O, In-Pr-O, In-Nd-O and In-Sc-O.

[0020] More preferably, the active layer in step (3) is one of In-Zn-Sn-O with an In:Zn:Sn element ratio of 91:6:3, In-Pr-O with an In:Pr element ratio of 90:10, In-Nd-O with an In:Nd element ratio of 95:5, and In-Sc-O with an In:Sc element ratio of 98:2.

[0021] Preferably, the power of the laser irradiation in step (4) is 0.05 to 0.2 W, and the scanning speed is 1 to 100 mm / s; more preferably, the power is 0.08 to 0.15 W, and the scanning speed is 10 to 100 mm / s.

[0022] Preferably, the source electrode and the drain electrode in step (4) are prepared by a sputtering process; the source electrode and the drain electrode are one of Al, Mo, Ti / Au alloy and Ti / Al / Ni / Au multi-element alloy.

[0023] Preferably, the power of the laser cutting in step (5) is 0.5 to 5 W, more preferably 0.8 to 5 W; the slit width of the paper-cut structure is 0.01 to 0.1 mm, more preferably 0.02 to 0.1 mm.

[0024] A paper-kirigami structure stretchable field effect transistor is prepared by the above preparation method.

[0025] The above-mentioned paper-kirigami structure stretchable field effect transistor is used in stretchable displays, wearable electronics and flexible sensors.

[0026] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0027] The present invention realizes the preparation of high-performance stretchable metal oxide semiconductor field effect transistors on flexible substrates, and the metal oxide semiconductor field effect transistors have excellent stretching properties under different tensile strains and in long-term stretch-release cycles. Due to the design of the stretchable paper-kirigami structure, the stress on each functional layer of the metal oxide semiconductor field effect transistor during the stretching process is extremely small, and long-term stretching will not destroy the connection between the functional layers, thereby ensuring the stable performance of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is the preparation process of the stretchable paper-kirigami structure In-Sc-O FET in Example 1.

[0029] Figure 2 Comparison of device transfer characteristic curves under different tensile strains in Example 4.

[0030] Figure 3 The resistance change of the Ni / Al gate electrode with the paper-cut structure under different tensile strains in Example 2.

[0031] Figure 4 The change of the transfer characteristic curve of the device in Example 4 after 1000 stretching-releasing cycles at 20% strain. DETAILED DESCRIPTION

[0032] The present invention is further described in detail below in conjunction with embodiments and drawings, but the embodiments of the present invention are not limited thereto.

[0033] If no specific conditions are specified in the examples of the present invention, the experiments were carried out under conventional conditions or conditions recommended by the manufacturer. All raw materials, reagents, etc. used without specifying the manufacturer are conventional products that can be purchased commercially.

[0034] Example 1

[0035] A paper-kirigami structure stretchable field effect transistor and its preparation method and application

[0036] 1) Sputtering Al / Nd gate electrode on flexible PI film;

[0037] 2) Depositing a 100 nm thick Al2O3 dielectric layer on the gate electrode film using an atomic layer deposition process;

[0038] 3) depositing a 10 nm thick In-Sc-O metal oxide semiconductor active layer on the dielectric layer by magnetron sputtering, wherein the element ratio of In to Sc is 98:2;

[0039] 4) annealing the In-Sc-O active layer by irradiating the In-Sc-O active layer with a laser power of 0.1 W, with a laser scanning speed of 50 mm / s, and finally depositing an Al source electrode and a drain electrode on the active layer by a sputtering process to obtain an In-Sc-O metal oxide semiconductor FET device with a bottom gate and a top contact;

[0040] 5) A 2W laser was used to cut the flexible In-Sc-O FET device to form a stretchable paper-cut structure with a slit width of 0.05 mm.

[0041] Example 2

[0042] A paper-kirigami structure stretchable field effect transistor and its preparation method and application

[0043] 1) Sputtering Ni / Al gate electrode on flexible PEN film;

[0044] 2) Depositing a 20 nm thick HfO2 dielectric layer on the gate electrode film using an atomic layer deposition process;

[0045] 3) depositing a 5 nm thick In-Nd-O metal oxide semiconductor active layer on the dielectric layer by magnetron sputtering, wherein the element ratio of In to Nd is 95:5;

[0046] 4) annealing the In-Nd-O active layer by irradiating the In-Nd-O active layer with a laser power of 0.08 W, with a laser scanning speed of 10 mm / s, and finally depositing a Mo source electrode and a drain electrode on the active layer by a sputtering process to obtain an In-Nd-O metal oxide semiconductor FET device with a bottom gate and a top contact;

[0047] 5) A 1W laser was used to cut the flexible In-Nd-O FET device to form a stretchable paper-cut structure with a slit width of 0.03mm.

[0048] Example 3

[0049] A paper-kirigami structure stretchable field effect transistor and its preparation method and application

[0050] 1) Sputtering Al / Nd gate electrode on flexible PET film;

[0051] 2) Depositing a 20 nm thick Al2O3 dielectric layer on the gate electrode film using an atomic layer deposition process;

[0052] 3) depositing a 2 nm thick In-Pr-O metal oxide semiconductor active layer on the dielectric layer by magnetron sputtering, wherein the element ratio of In to Pr is 90:10;

[0053] 4) annealing the In-Pr-O active layer by irradiating the In-Pr-O active layer with a laser having a power of 0.115 W, with a laser scanning speed of 80 mm / s, and finally depositing an Al source electrode and a drain electrode on the active layer by a sputtering process to obtain an In-Pr-O metal oxide semiconductor FET device with a bottom gate and a top contact;

[0054] 5) A flexible In-Pr-O FET device was cut using a laser with a power of 0.8 W to form a stretchable paper-cut structure with a slit width of 0.02 mm.

[0055] Example 4

[0056] A paper-kirigami structure stretchable field effect transistor and its preparation method and application

[0057] 1) Sputtering Ni / Au gate electrode on flexible PI film;

[0058] 2) Depositing a 50nm thick Al2O3 dielectric layer on the gate electrode film using an atomic layer deposition process;

[0059] 3) depositing a 10 nm thick In-Sn-Zn-O metal oxide semiconductor active layer on the dielectric layer by magnetron sputtering, wherein the element ratio of In, Sn and Zn is 91:6:3;

[0060] 4) annealing the In-Zn-Sn-O active layer by irradiating the In-Zn-Sn-O active layer with a laser power of 0.15 W, with a laser scanning speed of 100 mm / s, and finally depositing a Ti / Al / Ni / Au multi-element alloy source electrode and a drain electrode on the active layer by a sputtering process to obtain an In-Zn-Sn-O metal oxide semiconductor FET device with a bottom gate and a top contact;

[0061] 5) A 5W laser was used to cut the flexible In-Zn-Sn-O FET device to form a stretchable paper-cut structure with a slit width of 0.1 mm.

[0062] The stretchable field effect transistors described in the above embodiments all adopt a bottom gate top contact structure, such as Figure 1 As shown; the present invention realizes the preparation of high-performance stretchable metal oxide semiconductor field effect transistors on flexible substrates, such as Figure 2-4 As shown, the metal oxide semiconductor field effect transistor has excellent tensile properties under different tensile strains and in long-term stretch-release cycles, and will not destroy the connection between the functional layers, thereby ensuring the stable performance of the device.

[0063] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be equivalent replacement methods and are included in the protection scope of the present invention.

Claims

1. A method for preparing a paper-kirigami structure stretchable field effect transistor, characterized in that: The following steps are involved: (1) preparing a gate electrode on a substrate; (2) preparing a dielectric layer on the electrode; (3) preparing an active layer on the dielectric layer; (4) annealing the active layer using a laser, and then preparing a source electrode and a drain electrode on the active layer to obtain a metal oxide semiconductor field effect transistor device with a bottom gate and a top contact; (5) A laser is used to cut the transistor into a stretchable paper-cut structure to obtain a paper-cut structure stretchable field effect transistor.

2. The method for preparing a paper-kirigami structure stretchable field effect transistor according to claim 1, characterized in that: The power of the laser cutting in step (5) is 0.5 to 5 W, and the slit width of the paper-cut structure is 0.01 to 0.1 mm; The power of the laser in step (4) is 0.05-0.2 W, and the scanning speed is 1-100 mm / s.

3. The method for preparing a paper-kirigami structure stretchable field effect transistor according to claim 2, characterized in that: The power of the laser cutting in step (5) is 0.8 to 5 W, and the slit width of the paper-cut structure is 0.02 to 0.1 mm; The power of the laser irradiation in step (4) is 0.08-0.15 W, and the scanning speed is 10-100 mm / s.

4. The method for preparing a paper-kirigami structure stretchable field effect transistor according to claim 1, characterized in that: The active layer in step (3) is prepared by a sputtering process; the active layer is In-MO, wherein M is at least one of Ga, Zn, Sn, Nd, Pr and Sc, the element ratio of In to M is 99:1 to 90:10, and the thickness of the active layer is 2 to 15 nm; or the element ratio of In to M is 98:2 to 90:10; the thickness of the active layer is 2 to 10 nm.

5. The method for preparing a paper-kirigami structure stretchable field effect transistor according to claim 4, characterized in that: The active layer in step (3) is one of In-Zn-Sn-O, In-Pr-O, In-Nd-O and In-Sc-O; Or the active layer in step (3) is one of In-Zn-Sn-O with an In:Zn:Sn element ratio of 91:6:3, In-Pr-O with an In:Pr element ratio of 90:10, In-Nd-O with an In:Nd element ratio of 95:5, and In-Sc-O with an In:Sc element ratio of 98:

2.

6. The method for preparing a paper-kirigami structure stretchable field effect transistor according to claim 1, characterized in that: The gate electrode in step (1) is prepared by a sputtering process; the gate electrode is at least one of Ni, Au, Al, Ti and Nd; The dielectric layer in step (2) is prepared by atomic layer deposition process; the dielectric layer is one of SiO2, Al2O3 and HfO2, and the thickness of the dielectric layer is 20 to 100 nm; The source electrode and the drain electrode in step (4) are prepared by a sputtering process; the source electrode and the drain electrode are one of Al, Mo, Ti / Au alloy and Ti / Al / Ni / Au multi-element alloy.

7. The method for preparing a paper-kirigami structure stretchable field effect transistor according to claim 6, characterized in that: In step (1), the gate electrode is one of Al / Nd alloy, Ni / Al alloy, Ni / Au alloy and Ti / Au alloy.

8. The method for preparing a paper-kirigami structure stretchable field effect transistor according to claim 1, characterized in that: The substrate in step (1) is one of polyethylene naphthalate film, polyimide film, polyethylene terephthalate film and polyethersulfone film.

9. A paper-kirigami structure stretchable field effect transistor prepared by the preparation method according to any one of claims 1 to 8.

10. Application of the paper-kirigami-structured stretchable field effect transistor described in claim 9 in stretchable displays, wearable electronics and flexible sensors.

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