Light detection device and manufacturing method thereof

Abstract

The invention relates to a light detection device and a manufacturing method thereof. The present invention addresses the problem of providing: a light detection device in which patterning of an organic layer is easy and quality is improved; and a method for manufacturing the light detection device. The light detection device includes: a lower structure; one or more common wiring connection parts and one or more pixel electrodes provided on the lower structure; an organic photoelectric conversion layer provided so as to overlap the one or more pixel electrodes and not to overlap the one or more common wiring connection sections; and a transparent electrode layer provided so as to overlap the organic photoelectric conversion layer and also overlap the one or more common wiring connection sections, the portion of the transparent electrode layer overlapping the one or more pixel electrodes being thicker than the other portions.

Description

Technical Field

[0001] The present invention relates to a light detection device and a method for manufacturing the light detection device. Background Art

[0002] In recent years, detection devices in which organic photoelectric conversion elements (OPD: Organic Photodiode) are arranged on a substrate have become known. Such detection devices are used as biosensors for detecting biometric information such as fingerprints and veins.

[0003] In a detection device using an OPD, a thin film transistor, an OPD layer, etc. are formed on a substrate. The OPD layer is formed by configuring an organic layer having multiple layers including an organic light-receiving layer, etc. between an upper electrode and a lower electrode. Here, for example, Japanese Patent Publication No. 2021-68793 discloses a detection device in which an OPD layer is selectively formed only in a sensor area. Summary of the invention

[0004] Problems to be solved by the invention

[0005] The inventors of the present application have studied the process of patterning by dry etching after coating the organic layer on the entire substrate in order to improve the film uniformity of the organic layer. When etching the organic layer, the general resist cannot obtain a selectivity, so it is necessary to set an inorganic material SiN, SiO, AlOx, etc. on the organic layer as a protective layer. However, when the protective layer is removed after etching the organic layer, there is a problem that the base layer formed by the same material as the protective layer will disappear at the same time. In addition, if the residue of the protective layer is generated on the organic layer, there is also a problem that the characteristics of the sensor are degraded.

[0006] The present invention has been made in view of the above-mentioned problems, and one object of the present invention is to provide a light detection device and a method for manufacturing the same, in which patterning of an organic layer is facilitated and quality is improved.

[0007] Means for solving problems

[0008] (1) The manufacturing method of the light detection device according to the present invention comprises: a lower structure forming step of forming a lower structure; a pixel electrode forming step of forming one or more common wiring connection parts and one or more pixel electrodes on the lower structure; an organic photoelectric conversion layer forming step of continuously forming an organic photoelectric conversion layer on the one or more common wiring connection parts and the one or more pixel electrodes; a first transparent electrode layer forming step of continuously forming a first transparent electrode layer on the one or more common wiring connection parts and the one or more pixel electrodes; and a resist forming step of forming a first transparent electrode layer overlapping with the one or more pixel electrodes and coexisting with the one or more common wiring connection parts. The method comprises the steps of: patterning the organic photoelectric conversion layer in a manner that the wiring connection portions do not overlap, thereby forming a resist on the first transparent electrode layer; a first transparent electrode layer etching step of removing the portion of the first transparent electrode layer not covered by the resist; an organic photoelectric conversion layer etching step of removing the resist and the portion of the organic photoelectric conversion layer not covered by the first transparent electrode layer, thereby exposing the one or more common wiring connection portions; and a second transparent electrode layer forming step of continuously forming the second transparent electrode layer in a manner that the second transparent electrode layer overlaps the organic photoelectric conversion layer or the first transparent electrode layer and also overlaps the one or more common wiring connection portions.

[0009] (2) In the method for manufacturing a light detection device described in (1) above, in the second transparent electrode layer forming step, the second transparent electrode layer may be formed so as to overlap on the first transparent electrode layer and also overlap on the one or more common wiring connection portions.

[0010] (3) It may be that in the manufacturing method of the light detection device described in the above (1), after the aforementioned organic photoelectric conversion layer etching process, it may further include a first transparent electrode layer removal process of removing the aforementioned first transparent electrode layer, and in the aforementioned second transparent electrode layer formation process, the aforementioned second transparent electrode layer is formed in a manner overlapping on the aforementioned organic photoelectric conversion layer and also overlapping on the aforementioned one or more common wiring connection portions.

[0011] (4) In the method for manufacturing a light detection device described in (1) above, in the resist forming step, the resist may be formed on the first transparent electrode layer so as to overlap with each of the pixel electrodes.

[0012] (5) It may be that in the manufacturing method of the light detection device described in the above (4), in the above-mentioned pixel electrode forming step, more than two above-mentioned pixel electrodes and one above-mentioned common wiring connection portion are formed, and in the above-mentioned second transparent electrode layer forming step, the above-mentioned second transparent electrode layer is formed in a manner overlapping on the above-mentioned organic photoelectric conversion layer or the above-mentioned first transparent electrode layer and also overlapping on the above-mentioned one above-mentioned common wiring connection portion.

[0013] (6) It may be that in the manufacturing method of the light detection device described in (4) above, in the aforementioned pixel electrode forming step, one aforementioned pixel electrode and one aforementioned common wiring connection portion are formed in a manner adjacent to each other, and in the aforementioned second transparent electrode layer forming step, the aforementioned second transparent electrode layer is formed in a manner overlapping on the aforementioned one aforementioned pixel electrode and also overlapping on the aforementioned one aforementioned common wiring connection portion.

[0014] (7) The method for manufacturing a light detection device described in (4) above may further include a rib forming step of forming ribs so as to cover the side surfaces of the organic photoelectric conversion layer after the organic photoelectric conversion layer etching step and before the second transparent electrode layer forming step.

[0015] (8) In the light detection device described in any one of (1) to (3), the first transparent electrode layer and the second transparent electrode layer may be made of the same material.

[0016] (9) In the light detection device described in any one of (1) to (3), the first transparent electrode layer may be formed of an indium-based oxide.

[0017] (10) In the light detection device described in any one of (1) to (3), the first transparent electrode layer may be formed of indium zinc oxide (IZO).

[0018] (11) In the method for manufacturing a light detecting device described in (1) above, in the first transparent electrode layer etching step, a portion of the first transparent electrode layer not covered by the resist may be removed by an inductively coupled plasma method using a gas containing CH 4 .

[0019] (12) It may be that in the manufacturing method of the light detection device described in (1) above, in the etching process of the organic photoelectric conversion layer, the resist is removed by using an inductively coupled plasma method using a gas containing O2 gas, and the portion of the organic photoelectric conversion layer not covered by the first transparent electrode layer is removed, thereby exposing the one or more common wiring connection portions.

[0020] (13) The light detection device of the present invention includes: a lower structure; one or more common wiring connection parts and one or more pixel electrodes arranged on the aforementioned lower structure; an organic photoelectric conversion layer, which is arranged in a manner overlapping on the aforementioned one or more pixel electrodes and not overlapping with the aforementioned one or more common wiring connection parts; and a transparent electrode layer, which is arranged in a manner overlapping with the aforementioned organic photoelectric conversion layer and also overlapping on the aforementioned one or more common wiring connection parts, wherein, in the aforementioned transparent electrode layer, a portion overlapping with the aforementioned one or more pixel electrodes is thicker than other portions.

[0021] (14) In the light detection device described in (13) above, the transparent electrode layer includes: a first transparent electrode layer, which is arranged on the organic photoelectric conversion layer in a manner overlapping the one or more pixel electrodes and not overlapping the one or more common wiring connection portions; and a second transparent electrode layer, which is arranged in a manner overlapping the first transparent electrode layer and also overlapping the one or more common wiring connection portions. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a block diagram schematically showing a substrate configuration of a photodetection device according to Embodiment 1 of the present invention.

[0023] Figure 2 This is a block diagram schematically showing a circuit configuration of a photodetection device according to Embodiment 1 of the present invention.

[0024] Figure 3 For Figure 1 The III-III cutting line corresponds to a cross-sectional view of the light detection device.

[0025] Figure 4A It is a cross-sectional view showing a method for manufacturing the photodetection device according to Embodiment 1 of the present invention.

[0026] Figure 4B To show the next Figure 4A A cross-sectional view of the process shown.

[0027] Figure 4C To show the next Figure 4B A cross-sectional view of the process shown.

[0028] Figure 4D To show the next Figure 4C A cross-sectional view of the process shown.

[0029] Figure 4E To show the next Figure 4D A cross-sectional view of the process shown.

[0030] Figure 4F To show the next Figure 4E A cross-sectional view of the process shown.

[0031] Figure 5 This is a table showing an example of etching conditions when forming the OPD layer according to the first embodiment of the present invention.

[0032] Figure 6 This is a schematic diagram showing a method for manufacturing a photodetection device according to Embodiment 2 of the present invention.

[0033] Figure 7 To show the next Figure 6 A schematic diagram of the process steps shown.

[0034] Figure 8 This is a schematic diagram showing a method for manufacturing a photodetection device according to Embodiment 3 of the present invention.

[0035] Fig. 9 To show the next Figure 8 A schematic diagram of the process steps shown.

[0036] Fig.10 This is a schematic diagram showing a method for manufacturing a photodetection device according to Embodiment 4 of the present invention.

[0037] Fig.11 This is a schematic diagram showing a method for manufacturing a photodetection device according to Embodiment 5 of the present invention. DETAILED DESCRIPTION

[0038] Hereinafter, various embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in various forms within the scope of the gist thereof, and is not to be construed as being limited to the description of the embodiments illustrated below.

[0039] In order to make the description clearer, the drawings sometimes schematically show the width, thickness, shape, etc. of each part compared with the actual method, but this is only an example and does not limit the interpretation of the present invention. In this specification and each figure, the same figure mark is given to the element having the same function as the element explained in the figure that has appeared, and the repeated description is sometimes omitted.

[0040] Furthermore, in the embodiments, when specifying the positional relationship between a certain structure and other structures, the terms “(on)” and “(under)” do not merely refer to the situation where a certain structure is located immediately above the certain structure or immediately below the certain structure, but also include the situation where there are other structures in between unless otherwise specified.

[0041] Figure 1 1 is a block diagram showing an overview of the substrate structure of the light detection device according to Embodiment 1. Figure 1As shown, the light detection device 1 includes a substrate 110 , a sensor unit 10 , a gate line driving circuit 20 , a signal line selecting circuit 21 , a detection circuit 24 , a control circuit 26 , and a power supply circuit 28 .

[0042] The substrate 110 is electrically connected to a control substrate 600 via a flexible printed substrate 500. A detection circuit 24 is provided on the flexible printed substrate 500. A control circuit 26 and a power supply circuit 28 are provided on the control substrate 600. The control circuit 26 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 26 supplies control signals to the sensor unit 10, the gate line driving circuit 20, and the signal line selection circuit 21 to control the detection operation of the sensor unit 10. The power supply circuit 28 supplies power supply voltage to the sensor unit 10, the gate line driving circuit 20, and the signal line selection circuit 21.

[0043] The light detection device 1 has a detection area DA and a frame area PA. The detection area DA is an area where the sensor unit 10 is installed. The frame area PA is an area outside the detection area DA and is an area where the sensor unit 10 is not installed. That is, the frame area PA is an area between the end of the detection area DA and the end of the substrate 110.

[0044] The sensor unit 10 includes a plurality of pixels PX, which receive light from the object to be detected. The plurality of pixels PX are arranged in rows and columns in the detection area DA. The plurality of pixels PX include a light detection sensor as a photodiode, and output an electrical signal corresponding to the light irradiated thereon. Each pixel PX outputs an electrical signal corresponding to the light irradiated thereon to the signal line selection circuit 21 as a detection signal Vdet. The light detection device 1 can detect biological-related information such as blood vessel images of fingers, palms, pulse waves, pulses, blood oxygen saturation, etc. based on the detection signal Vdet from each pixel PX. In addition, each pixel PX performs detection based on the gate drive signal Vgcl supplied from the gate line drive circuit 20.

[0045] The gate line driving circuit 20 and the signal line selecting circuit 21 are disposed in the frame area PA. Figure 1 As shown, the gate line driving circuit 20 is provided in a region extending along the extension direction of the signal line SGL in the frame area PA. The signal line selection circuit 21 is provided in a region extending along the extension direction of the gate line GCL in the frame area PA and in a region below the substrate 110.

[0046] Figure 2 1 is a block diagram showing an overview of the circuit configuration of the light detection device according to Embodiment 1. Figure 2As shown, the photodetection device 1 includes a detection control unit 30 and a detection unit 40. A part or all of the functions of the detection control unit 30 are included in the control circuit 26. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 24 are included in the control circuit 26.

[0047] The detection control unit 30 supplies control signals to the gate line driving circuit 20, the signal line selection circuit 21 and the detection unit 40 respectively, and is a circuit that controls their operations. The detection control unit 30 supplies various control signals such as a start signal STV, a clock signal CK, and a reset signal RST to the gate line driving circuit 20. In addition, the detection control unit 30 supplies various control signals such as a selection signal ASW to the signal line selection circuit 21. The gate line driving circuit 20 is a circuit that drives the gate line GCL based on various control signals. The gate line driving circuit 20 selects a plurality of gate lines GCL in sequence or simultaneously, and supplies a gate driving signal Vgcl to the selected gate line GCL. Thus, the gate line driving circuit 20 selects the pixel PX connected to the gate line GCL. The signal line selection circuit 21 is a switching circuit that selects a plurality of signal lines SGL in sequence or simultaneously. The signal line selection circuit 21 is, for example, a multiplexer. The signal line selection circuit 21 connects the selected signal line SGL to the detection circuit 24 based on the selection signal ASW supplied from the detection control unit 30. As a result, the signal line selection circuit 21 outputs the detection signal Vdet of the pixel PX to the detection unit 40 .

[0048] The detection unit 40 includes the detection circuit 24, the signal processing unit 44, the storage unit 45, the coordinate extraction unit 46, and the detection timing control unit 47. The detection timing control unit 47 controls the detection circuit 24, the signal processing unit 44, and the coordinate extraction unit 46 based on the control signal supplied from the detection control unit 30 so that the detection circuit 24, the signal processing unit 44, and the coordinate extraction unit 46 operate synchronously.

[0049] The detection circuit 24 is, for example, an analog front end circuit (AFE: Analog Front End). The detection circuit 24 is a signal processing circuit having at least the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal. The signal processing unit 44 is a logic circuit that detects a specified physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 24. When a detection object such as a finger or a palm contacts or approaches the detection surface, the signal processing unit 44 can detect the surface unevenness of the finger, palm, etc. based on the signal from the detection circuit 24. In addition, the signal processing unit 44 can detect biological-related information such as blood vessel images, pulse waves, pulses, and blood oxygen saturation of the finger, palm, etc. based on the signal from the detection circuit 24. The storage unit 45 temporarily stores the signal calculated by the signal processing unit 44. The storage unit 45 may be, for example, a RAM (Random Access Memory), a register circuit, or the like. The coordinate extraction unit 46 is a logic circuit that obtains the detection coordinates of the concave and convex surfaces of the finger, palm, etc. when the contact or approach of the finger, palm, etc. is detected in the signal processing unit 44. In addition, the coordinate extraction unit 46 is a logic circuit that obtains the detection coordinates of the blood vessels of the finger, palm, etc. The coordinate extraction unit 46 combines the detection signals Vdet output from each pixel PX of the sensor unit 10 to generate two-dimensional information showing the shape of the concave and convex surfaces of the finger, palm, etc. It should be noted that the coordinate extraction unit 46 may output the detection signal Vdet in the form of the sensor output Vo without calculating the detection coordinates.

[0050] Next, use Figure 3 The substrate 110 will be described in detail. Figure 3 For Figure 1 The cross-sectional view corresponding to the III-III cutting line. Figure 3 , the vicinity of the end of the detection area DA and the entire frame area PA are shown. Figure 3 In order to make the cross-sectional structure easier to observe, the hatching lines of some layers are omitted.

[0051] like Figure 3 As shown, the light detection device 1 includes a lower structure 100 including a thin film transistor TFT, an OPD layer 200 provided on the lower structure 100 , a sealing structure 300 provided on the OPD layer 200 , and a common wiring connection portion 400 .

[0052] The lower structure 100 has a substrate 110 and a blocking inorganic layer 120 disposed on the substrate 110. The substrate 110 may be, for example, a two-layer structure of a glass substrate and a resin substrate disposed thereon. The resin substrate may be formed of, for example, polyimide. However, this is not limited thereto, and the substrate 110 may also not have a glass substrate, but may be formed of only a flexible resin substrate. The blocking inorganic layer 120 may be a stacked structure formed of multiple layers. The lower structure 100 may also have an additional layer 125 corresponding to the portion where the thin film transistor TFT is formed.

[0053] The thin film transistor TFT includes a semiconductor layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134. A gate insulating layer 140 is provided between the semiconductor layer 131 and the gate electrode 132. A silicon oxide layer can be used as the gate insulating layer 140. An interlayer insulating layer 150 is formed on the gate electrode 132. The interlayer insulating layer 150 can have a structure in which a silicon nitride layer and a silicon oxide layer are stacked.

[0054] A planarization layer 160 is formed on the interlayer insulating layer 150. The planarization layer 160 can be formed of a resin such as a photosensitive acrylic resin having excellent surface flatness. The planarization layer 160 can be removed in the portion where the OPD layer 200 is electrically connected to the lower structure 100. In addition, the planarization layer 160 can be partially removed in the frame area PA to form a dam. If a dam is formed, the resin material constituting the sealing structure 300 can be intercepted to prevent it from leaking outward from the frame area PA.

[0055] An insulating layer 170 may be provided on the planarization layer 160. In addition, an inorganic insulating layer 180 formed of an inorganic material may be provided on the insulating layer 170 in the detection area DA. Such an inorganic insulating layer 180 is sometimes referred to as a rib, a partition wall, a dam, etc. The inorganic insulating layer 180 is, for example, an inorganic insulating layer formed of silicon nitride, etc. The inorganic insulating layer 180 may also be provided on the pixel electrode 210 in such a manner that the pixel electrode 210 included in the OPD layer 200 is exposed.

[0056] The OPD layer 200 is provided Figure 1 The OPD layer 200 is formed by the arrangement of the pixels PX shown in FIG. 1 . The OPD layer 200 is composed of a pixel electrode 210 provided on the insulating layer 170, an organic photoelectric conversion layer 220 continuously covering a plurality of pixel electrodes 210, and a transparent electrode layer 230 provided on the organic photoelectric conversion layer 220. The transparent electrode layer 230 includes a first transparent electrode layer 231 provided on the organic photoelectric conversion layer 220, and a second transparent electrode layer 232 provided on the first transparent electrode layer 231.

[0057] The pixel electrode 210 is formed corresponding to each pixel PX and is electrically connected to the drain electrode 134 of the lower structure 100. The organic photoelectric conversion layer 220 is a layer that functions as a photoelectric conversion layer. In Embodiment 1, the organic photoelectric conversion layer 220 is continuously formed on all the pixel electrodes 210 in the detection area DA. The so-called "continuously" means continuous without cutting, and the organic photoelectric conversion layer 220 is formed without cutting on all the pixel electrodes 210 in the detection area DA.

[0058] The transparent electrode layer 230 is sometimes referred to as an upper electrode or a common electrode. The first transparent electrode layer 231 and the second transparent electrode layer 232 are common electrodes that are overlapped and provided on all pixels PX in the detection area DA. The second transparent electrode layer 232 is continuously formed on a common wiring connection portion 400 described later and the first transparent electrode layer 231. In addition, the first transparent electrode layer 231 and the second transparent electrode layer 232 can be formed of an indium oxide. Among the indium oxides, indium zinc oxide (IZO) can be used.

[0059] As for the first transparent electrode layer 231 and the second transparent electrode layer 232, as long as they are transparent and conductive materials, they can be formed of different materials. In addition, the first transparent electrode layer 231 and the second transparent electrode layer 232 can be formed of the same material. As for the portion of the transparent electrode layer 230 that overlaps on the plurality of pixel electrodes 210, since the first transparent electrode layer 231 is formed, the film thickness becomes thicker than other portions. Compared with the portion overlapping on the bank portion and the common wiring connection portion 400, the portion overlapping with all the pixel electrodes 210 in the detection area DA becomes thicker only by the amount corresponding to the first transparent electrode layer 231. As for the transparent electrode layer 230 covering the side of the OPD layer 200, since the first transparent electrode layer 231 is not formed, it is thinner than the transparent electrode layer of the portion overlapping on the plurality of pixel electrodes 210.

[0060] The sealing structure 300 includes a first inorganic layer 310 provided on the transparent electrode layer 230, a resin layer 320 as a resin layer provided on the first inorganic layer 310, and a second inorganic layer 330 provided on the resin layer 320. The resin layer 320 may be formed of a material having high transmittance and low moisture permeability.

[0061] The ends of the first inorganic layer 310, the resin layer 320, and the second inorganic layer 330 are located in the frame area PA. In particular, the end of the second inorganic layer 330 is located near the edge of the substrate 110. In addition, the second inorganic layer 330 is in contact with the first inorganic layer 310 in the frame area PA. In this way, in the sealing structure 300, the multiple layers formed of inorganic materials are used to suppress the intrusion of moisture from the outside into the organic photoelectric conversion layer 220.

[0062] The common wiring connection portion 400 is provided on the interlayer insulating layer 150 in the frame area PA and is connected to the common wiring 410. The common wiring 410 supplies a common voltage to the transparent electrode layer 230 via the common wiring connection portion 400. Therefore, the common wiring connection portion 400 and the transparent electrode layer 230 need to be electrically connected. The second transparent electrode layer 232 is continuously formed on the plurality of pixel electrodes 210 and the common wiring connection portion 400, so that the first transparent electrode layer 231 is electrically connected to the common wiring connection portion 400. The wiring 420 is provided on the gate insulating layer 140.

[0063] Next, a method for manufacturing the substrate 110 according to the first embodiment will be described in detail with reference to the drawings. Figure 4A to Figure 4F FIG. 1 is a diagram showing a method for manufacturing the substrate 110 according to the first embodiment of the present invention. Figure 1 Take the cross-sectional view corresponding to the III-III cutting line as an example. Figure 5 TABLE 1 is a table showing an example of etching conditions when forming the OPD layer 200 according to Embodiment 1. In the dry etching of Embodiment 1, reactive ion etching (RIE) or inductively coupled plasma (ICP) can be used. Figure 5 The ICP method was carried out under the conditions of

[0064] First, if Figure 4A As shown, the lower structure 100, the common wiring connection portion 400, the common wiring 410 and the wiring 420 are formed on the substrate 110. The lower structure 100 is formed by repeating a process using a common photolithography method a plurality of times. Various methods are known, so the detailed description thereof is omitted in this specification.

[0065] Next, a plurality of pixel electrodes 210 are formed on the lower structure 100 in the detection area DA. Then, an inorganic insulating layer 180 is formed to serve as a partition wall between the pixel electrodes 210. This formation may also be performed by a conventional photolithography method. Next, an organic photoelectric conversion layer 220 is formed in the detection area DA and the frame area PA. For example, it may be formed by coating using a slit coater.

[0066] Then, the first transparent electrode layer 231 is formed on the organic photoelectric conversion layer 220 in the detection area DA and the frame area PA. Then, the resist 700 is formed on the first transparent electrode layer in the detection area DA and the frame area PA.

[0067] The mask 800 is formed so as to overlap all the pixel electrodes 210 in the detection area DA and not overlap the common wiring connection portion 400. This formation may be performed by a common photolithography method.

[0068] Next, if Figure 4B As shown, the resist 700 is patterned using a mask 800 so as to overlap with all the pixel electrodes 210 in the detection area DA and not overlap with the common wiring connection portion 400 .

[0069] Next, if Figure 4C As shown, the portion of the first transparent electrode layer 231 not covered by the resist 700 is removed by the ICP method including CH4 gas. In the dry etching using CH4 gas, the resist 700 and the organic photoelectric conversion layer 220 are hardly etched. Therefore, after the dry etching, the portion of the organic photoelectric conversion layer 220 overlapping the common wiring connection portion 400 is exposed.

[0070] Next, if Figure 4D As shown, the resist 700 and the portion of the organic photoelectric conversion layer 220 not covered by the first transparent electrode layer 231 are removed by an ICP method including O2 gas. Here, in dry etching using O2 gas, inorganic insulating materials such as SiOx, SiNx, and AlOx, and metal oxide films such as indium oxides are hardly etched, so the insulating layer 170 and the common wiring connection portion 400 are hardly etched. Through this process, the first transparent electrode layer 231 that overlaps with all the pixel electrodes 210 and does not overlap with the common wiring connection portion 400 is formed.

[0071] Next, if Figure 4E As shown, the second transparent electrode layer 232 is formed in the detection area DA and the frame area PA. Then, a resist 702 is continuously formed to cover all pixel electrodes 210 and common wiring connection portions 400 in the detection area DA. The resist 702 may be formed by a conventional photolithography method.

[0072] Next, if Figure 4F As shown, the portion of the second transparent electrode layer 232 not covered by the resist 702 is removed by an ICP method including CH4 gas. Thereafter, the resist 702 is removed. Through this process, the second transparent electrode layer 232 can be formed to overlap all the pixel electrodes 210 and also overlap the common wiring connection portion 400.

[0073] The first transparent electrode layer 231 is formed of a transparent and conductive material, and therefore, even if it is not removed and remains on the organic photoelectric conversion layer 220, it is possible to reduce the degradation of the characteristics of the sensor unit 10. In addition, by using the first transparent electrode layer 231 as a protective layer, the number of steps for removing the protective mask for etching the organic photoelectric conversion layer 220 can be reduced.

[0074] On the other hand, the first transparent electrode layer 231 may be removed before forming the second transparent electrode layer 232. When the first transparent electrode layer 231 is removed, the second transparent electrode layer 232 is continuously formed so as to overlap the organic photoelectric conversion layer 220 without overlapping the first transparent electrode layer 231 and also overlap the common wiring connection portion 400. When the first transparent electrode layer 231 is removed, even if a film residue is generated on the organic photoelectric conversion layer 220, since the first transparent electrode layer 231 is transparent and conductive, the degradation of the characteristics of the sensor unit 10 can be minimized.

[0075] Next, refer to Figure 6 and Figure 7 , a method for manufacturing the light detection device 1 according to the second embodiment will be described. Figure 6 and Figure 7 This is a schematic diagram showing the manufacturing method of Embodiment 2. Figure 3 The lower structure 100 (described later) which is lower than the inorganic insulating layer 180 Figures 8 to 11 The same is true in ).

[0076] In addition, in Embodiment 2, the pixel electrode 210 and the common wiring connection portion 400 are provided in the same layer, and the end of the common wiring connection portion 400 is covered by the inorganic insulating layer 180, which is different from Embodiment 1 in which the end of the common wiring connection portion 400 is covered by the insulating layer 170 (the same is true in Embodiments 3 to 5). It should be noted that when the common wiring connection portion 400 of Embodiment 1 is provided, the common wiring connection portion 400 can be provided in the same layer as the pixel electrode 210 as in Embodiment 2. In addition, in Embodiment 1, the structure of the common wiring connection portion 400 of Embodiment 2 can also be provided at the connection with the common wiring 410. It should be noted that in Embodiment 2, the common wiring connection portion 400 covered by the insulating layer 170 can also be provided as in Embodiment 1.

[0077] and Figure 4A Similarly, a plurality of pixel electrodes 210 and a common wiring connection portion 400 are formed on the substrate 110. For the sake of convenience, one of the plurality of pixel electrodes 210 is referred to as a pixel electrode 210a and the other is referred to as a pixel electrode 210b. Figure 6 As shown in the upper left side of FIG. 1 , an organic photoelectric conversion layer 220 is continuously formed on the pixel electrode 210a, the pixel electrode 210b, and a common wiring connection portion 400 and on the entire surface of the substrate. Next, a first transparent electrode layer 231 is formed on the organic photoelectric conversion layer 220. In addition, a resist 700 is formed on the first transparent electrode layer 231. Moreover, a mask 800 is independently formed on the resist 700 so as to overlap with the pixel electrode 210a and the pixel electrode 210b, respectively.

[0078] Next, if Figure 6 As shown in the upper right side of , the resist 700 is patterned using a mask 800. Since the mask 800 is formed so as to overlap with the pixel electrode 210a and the pixel electrode 210b, the mask 800 is also formed so as to overlap with the pixel electrode 210a and the pixel electrode 210b, similarly to the resist 700.

[0079] Next, if Figure 6 As shown in the lower left section of , the portion of the first transparent electrode layer 231 not covered by the resist 700 is removed by an ICP method containing CH4 gas. Through this process, the first transparent electrode layer 231 is separated into a first independent transparent electrode 231a overlapping on the pixel electrode 210a, and a first independent transparent electrode 231b overlapping on the pixel electrode 210b. The first transparent electrode layer 231 is formed in a manner that it overlaps with each of the plurality of pixel electrodes 210 independently and does not overlap with the common wiring connection portion 400.

[0080] Next, if Figure 6 As shown in the right side of the lower section, the resist 700 and the organic photoelectric conversion layer 220 that are not covered by the first independent transparent electrode 231a and the first independent transparent electrode 231b are removed by an ICP method containing O2 gas. Through this process, the organic photoelectric conversion layer 220 is separated into an organic photoelectric conversion layer 220a overlapping on the pixel electrode 210a, and an organic photoelectric conversion layer 220b overlapping on the pixel electrode 210b. This is because the organic photoelectric conversion layer 220 on each pixel electrode 210 is protected by the first transparent electrode layer that is not etched by the O2 gas. The portion of the organic photoelectric conversion layer 220 that is not covered by the first transparent electrode layer 231 is removed, and the inorganic insulating layer 180 and the common wiring connection portion 400 between the pixel electrode 210a and the pixel electrode 210b are exposed.

[0081] Next, if Figure 7 As shown in the upper part of FIG. , the second transparent electrode layer 232 is formed on the entire surface of the substrate. Then, a resist 702 is continuously formed so as to cover the pixel electrode 210 a , the pixel electrode 210 b and the common wiring connection portion 400 .

[0082] Next, if Figure 7As shown in the lower section of FIG. 1 , the portion of the second transparent electrode layer 232 not covered by the resist 702 is removed by an ICP method containing CH4 gas. Thereafter, the resist 702 is removed. Through this process, the second transparent electrode layer 232 continuously overlapped on the pixel electrode 210a, the pixel electrode 210b, and the common wiring connection portion 400 can be formed. The first independent transparent electrode 231a and the second transparent electrode layer 232 in the pixel electrode 210a function as the upper electrode of the OPD layer 200, and the first independent transparent electrode 231b and the second transparent electrode layer 232 in the pixel electrode 210b function as the upper electrode of the OPD layer 200.

[0083] Embodiment 2 is different from Embodiment 1 in that the organic photoelectric conversion layer 220 is formed so as to overlap each pixel electrode 210 . By independently forming the organic photoelectric conversion layer 220 on each of the plurality of pixel electrodes 210 , leakage current between the pixel electrodes 210 can be suppressed.

[0084] Next, refer to Figure 8 and Fig. 9 , a method for manufacturing the light detection device 1 according to Embodiment 3 will be described. Figure 8 and Fig. 9 This is a schematic diagram showing the manufacturing method of the third embodiment.

[0085] First, if Figure 8 As shown in the upper left section of , a pixel electrode 210a, a common wiring connection portion 400a, a pixel electrode 210b, and a common wiring connection portion 400b are formed on a substrate 110. One pixel electrode 210 and one common wiring connection portion 400 are formed in a manner adjacent to each other. In addition, an organic photoelectric conversion layer 220 is continuously formed on the entire surface of the substrate 110. Next, a first transparent electrode layer 231 is formed on the organic photoelectric conversion layer 220. In addition, a resist 700 is formed on the first transparent electrode layer 231. In addition, a mask 800 is independently formed on the resist 700 in a manner overlapping with the pixel electrode 210a and the pixel electrode 210b, respectively.

[0086] Next, if Figure 8 As shown in the upper right side of FIG. , the resist 700 is patterned using a mask 800. Since the mask 800 is formed so as to overlap with the pixel electrode 210a and the pixel electrode 210b, the resist 700 is also formed so as to overlap with the pixel electrode 210a and the pixel electrode 210b.

[0087] Next, if Figure 8As shown in the lower left section of , the portion of the first transparent electrode layer 231 not covered by the resist is removed by an ICP method containing CH4 gas. Through this process, the first transparent electrode layer 231 is separated into a first independent transparent electrode 231a overlapping on the pixel electrode 210a, and a first independent transparent electrode 231b overlapping on the pixel electrode 210b. The first transparent electrode layer 231 is formed in a manner that it overlaps with the plurality of pixel electrodes 210, respectively, and does not overlap with the common wiring connection portion 400. The first transparent electrode layer 231 that overlaps with the plurality of pixel electrodes 210, respectively, and does not overlap with the plurality of common wiring connection portions 400 is formed.

[0088] Next, if Figure 8 As shown in the right side of the lower section of , the resist 700 and the portion of the organic photoelectric conversion layer 220 not covered by the first independent transparent electrode 231a and the first independent transparent electrode 231b are removed by an ICP method containing O2 gas. Through this process, the organic photoelectric conversion layer 220 is separated into an organic photoelectric conversion layer 220a overlapping on the pixel electrode 210a, and an organic photoelectric conversion layer 220b overlapping on the pixel electrode 210b. This is because the organic photoelectric conversion layer 220 on each pixel electrode 210 is protected by the first transparent electrode layer 231 that is not etched by the O2 gas. The portion of the organic photoelectric conversion layer 220 not covered by the first transparent electrode layer 231 is removed, and the inorganic insulating layer 180 between the pixel electrode 210a and the pixel electrode 210b, the common wiring connection portion 400a, and the common wiring connection portion 400b are exposed.

[0089] Next, if Fig. 9 As shown in the upper section of , the second transparent electrode layer 232 is formed on the entire surface of the substrate. Then, a resist 702a covering the pixel electrode 210a and the common wiring connection portion 400a and a resist 702b covering the pixel electrode 210b and the common wiring connection portion 400b are independently formed.

[0090] Next, if Fig. 9 As shown in the lower section of FIG. 2 , the portion of the second transparent electrode layer 232 not covered by the resist 702 is removed by the ICP method using CH4 gas. Thereafter, the resist 702 is removed. Through this process, the second transparent electrode layer 232 is separated into the second independent transparent electrode 232a on the first independent transparent electrode 231a, and the second independent transparent electrode 232b on the first independent transparent electrode 231b. The first independent transparent electrode 231a and the second independent transparent electrode 232a in the pixel electrode 210a function as the common electrode of the OPD layer 200, and the first independent transparent electrode 231b and the second independent transparent electrode 232b in the pixel electrode 210b function as the common electrode of the OPD layer 200.

[0091] Embodiment 3 is different from Embodiment 2 in that one pixel electrode 210 is formed adjacent to one common wiring connection portion 400, and the second transparent electrode layer 232 is independently formed in a manner overlapping one pixel electrode 210 and one common wiring connection portion 400. By forming one common wiring connection portion 400 adjacent to one pixel electrode 210, the same potential can be stably supplied to a plurality of pixel electrodes 210.

[0092] Next, refer to Fig.10 , a method for manufacturing the light detection device 1 according to the fourth embodiment will be described. Fig.10 2 is a schematic diagram showing a manufacturing method of Embodiment 4. The manufacturing method of Embodiment 4 is similar to that of Embodiment 2 until the step of forming the first transparent electrode layer 231. Figure 6 For convenience of description, one of the plurality of pixel electrodes 210 is referred to as a pixel electrode 210 a and the other is referred to as a pixel electrode 210 b .

[0093] In Embodiment 4, after removing the resist 700 and the portion of the organic photoelectric conversion layer 220 not covered by the first transparent electrode layer 231, a step of forming the ribs 182 covering the side surfaces of the organic photoelectric conversion layer 220 and the first transparent electrode layer 231 is further included. After forming the first transparent electrode layer 231 (see Figure 6 right side of the lower paragraph), such as Fig.10 As shown in the upper left section, Figure 6 On the inorganic insulating layer 181, the first independent transparent electrode 231a, the first independent transparent electrode 231b and the common wiring connection portion 400 corresponding to the inorganic insulating layer 180 in the right side of the lower stage, the rib 182 is continuously formed with the same material as the inorganic insulating layer 181. Next, a resist 704 is formed on both ends of each pixel electrode 210 and on the rib 182.

[0094] Next, if Fig.10 As shown in the upper right side of FIG. 1 , the portion of the rib 182 not covered by the resist 704 is removed by an ICP method containing CH4 gas. Then, the resist 704 is removed. The portion of the rib 182 not covered by the resist 704 is removed, and the upper surface of the first transparent electrode layer 231 is exposed. Through this process, the rib 182 covering the side of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220 can be formed.

[0095] Next, if Fig.10 As shown in the lower left side of FIG. , the second transparent electrode layer 232 is formed on the entire surface of the substrate. Thereafter, a resist 702 is continuously formed so as to cover the pixel electrode 210 a , the pixel electrode 210 b and the common wiring connection portion 400 .

[0096] Next, if Fig.10 As shown in the lower right side of FIG. 1 , the portion of the second transparent electrode layer 232 not covered by the resist 702 is removed by an ICP method containing CH4 gas. Thereafter, the resist 702 is removed. Through this process, the second transparent electrode layer 232 continuously overlapped on the pixel electrode 210a, the pixel electrode 210b and the common wiring connection portion 400 can be formed while providing the ribs 182 covering the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220.

[0097] Embodiment 4 is different from Embodiment 2 in that ribs 182 are formed on the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220. By forming the ribs 182 made of an inorganic material to cover the side surfaces of the organic photoelectric conversion layer 220, leakage current from the side surfaces of the organic photoelectric conversion layer 220 can be suppressed.

[0098] Next, refer to Fig.11 , a method for manufacturing the light detection device 1 according to Embodiment 5 will be described. Fig.11 2 is a schematic diagram showing a manufacturing method of Embodiment 5. The manufacturing method of Embodiment 5 is similar to that of Embodiment 3 until the step of forming the first transparent electrode layer 231. Figure 8 The plurality of pixel electrodes 210 formed on the substrate 110 are respectively referred to as pixel electrodes 210a and pixel electrodes 210. In addition, the plurality of common wiring connection portions 400 formed on the substrate 110 are respectively referred to as common wiring connection portions 400a and common wiring connection portions 400b.

[0099] In Embodiment 5, after removing the resist 700 and the portion of the organic photoelectric conversion layer 220 not covered by the first transparent electrode layer 231, a step of forming the ribs 182 covering the side surfaces of the organic photoelectric conversion layer 220 and the first transparent electrode layer 231 is further included. After forming the first transparent electrode layer 231 (see Figure 8 right side of the lower paragraph), such as Fig.11 As shown in the upper left section, Figure 8 On the inorganic insulating layer 181, which corresponds to the inorganic insulating layer 180, the first independent transparent electrode 231a, the first independent transparent electrode 231b, the common wiring connection part 400a, and the common wiring connection part 400b in the right side of the lower stage, the rib 182 is continuously formed with the same material as the inorganic insulating layer 181. Next, a resist 704 is formed on both ends of each pixel electrode 210 and on the rib 182.

[0100] Next, if Fig.11As shown in the upper right side of FIG. 1 , the portion of the rib 182 not covered by the resist 704 is removed by an ICP method containing CH4 gas. Then, the resist 704 is removed. The portion of the rib 182 not covered by the resist 704 is removed, and the upper surface of the first transparent electrode layer 231 is exposed. Through this process, the rib 182 covering the side of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220 can be formed.

[0101] Next, if Fig.11 As shown in the lower left side of , the second transparent electrode layer 232 is formed on the entire surface of the substrate. Then, a resist 702a covering the pixel electrode 210a and the common wiring connection portion 400a and a resist 702b covering the pixel electrode 210b and the common wiring connection portion 400b are independently formed.

[0102] Next, if Fig.11 As shown in the lower right side of FIG. 2 , the portion of the second transparent electrode layer 232 not covered by the resist 702 is removed by the ICP method using CH4 gas. Thereafter, the resist 702 is removed. Through this process, the second independent transparent electrode 232a and the second independent transparent electrode 232b can be formed independently while the ribs 182 covering the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220 are provided.

[0103] Embodiment 5 is different from Embodiment 3 in that ribs 182 are formed on the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220. By forming the ribs 182 made of an inorganic material to cover the side surfaces of the organic photoelectric conversion layer 220, leakage current from the side surfaces of the organic photoelectric conversion layer 220 can be suppressed.

[0104] The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the configuration described in the embodiments may be replaced by a substantially identical configuration, a configuration having the same function and effect, or a configuration that can achieve the same purpose.

Claims

1. A method for manufacturing a light detection device, comprising: A lower structure forming step of forming a lower structure; A pixel electrode forming step of forming one or more common wiring connection parts and one or more pixel electrodes on the lower structure; an organic photoelectric conversion layer forming step of continuously forming an organic photoelectric conversion layer on the one or more common wiring connection portions and the one or more pixel electrodes; a first transparent electrode layer forming step of continuously forming a first transparent electrode layer on the one or more common wiring connection portions and the one or more pixel electrodes; a resist forming step of patterning the layer so as to overlap with the one or more pixel electrodes and not overlap with the one or more common wiring connection portions, thereby forming a resist on the first transparent electrode layer; a first transparent electrode layer etching step of removing a portion of the first transparent electrode layer not covered by the resist; an organic photoelectric conversion layer etching step of removing the resist and removing a portion of the organic photoelectric conversion layer not covered by the first transparent electrode layer, thereby exposing the one or more common wiring connection portions; and The second transparent electrode layer forming step continuously forms the second transparent electrode layer so as to overlap on the organic photoelectric conversion layer or the first transparent electrode layer and also overlap on the one or more common wiring connection portions.

2. The manufacturing method according to claim 1, characterized in that In the second transparent electrode layer forming step, the second transparent electrode layer is formed so as to overlap on the first transparent electrode layer and also overlap on the one or more common wiring connection portions.

3. The manufacturing method according to claim 1, characterized in that: After the organic photoelectric conversion layer etching step, the method further includes removing the first transparent electrode layer. In the second transparent electrode layer forming step, the second transparent electrode layer is formed so as to overlap on the organic photoelectric conversion layer and also overlap on the one or more common wiring connection portions.

4. The manufacturing method according to claim 1, characterized in that: In the resist forming step, the resist is formed on the first transparent electrode layer so as to overlap with each of the pixel electrodes.

5. The manufacturing method according to claim 4, characterized in that: In the pixel electrode forming step, two or more pixel electrodes and one common wiring connection portion are formed. In the second transparent electrode layer forming step, the second transparent electrode layer is formed so as to overlap on the organic photoelectric conversion layer or the first transparent electrode layer and also overlap on the one common wiring connection portion.

6. The manufacturing method according to claim 4, characterized in that: In the pixel electrode forming step, one pixel electrode and one common wiring connection portion are formed adjacent to each other. In the second transparent electrode layer forming step, the second transparent electrode layer is formed so as to overlap on the one pixel electrode and also overlap on the one common wiring connection portion.

7. The manufacturing method according to claim 4, characterized in that: After the organic photoelectric conversion layer etching step and before the second transparent electrode layer forming step, a rib forming step of forming a rib so as to cover a side surface of the organic photoelectric conversion layer is further included.

8. The manufacturing method according to claims 1 to 3, characterized in that: The first transparent electrode layer and the second transparent electrode layer are made of the same material.

9. The manufacturing method according to claims 1 to 3, characterized in that: The first transparent electrode layer is formed of indium-based oxide.

10. The manufacturing method according to claims 1 to 3, characterized in that: The first transparent electrode layer is formed of indium zinc oxide (IZO).

11. The manufacturing method according to claim 1, characterized in that: In the first transparent electrode layer etching step, a portion of the first transparent electrode layer not covered by the resist is removed by an inductively coupled plasma method using a gas containing CH 4 .

12. The manufacturing method according to claim 1, characterized in that: In the organic photoelectric conversion layer etching step, the resist is removed by an inductively coupled plasma method using a gas including O 2 gas, and a portion of the organic photoelectric conversion layer not covered by the first transparent electrode layer is removed, thereby exposing the one or more common wiring connection portions.

13. A light detection device, characterized in that include: Substructure; One or more common wiring connection parts and one or more pixel electrodes are arranged on the lower structure; an organic photoelectric conversion layer, which is provided so as to overlap on the one or more pixel electrodes and not overlap with the one or more common wiring connection portions; and a transparent electrode layer provided so as to overlap with the organic photoelectric conversion layer and also overlap on the one or more common wiring connection portions, Among them, in the transparent electrode layer, a portion overlapping with the one or more pixel electrodes is thicker than other portions.

14. The light detection device according to claim 13, wherein: The transparent electrode layer comprises: a first transparent electrode layer provided on the organic photoelectric conversion layer so as to overlap the one or more pixel electrodes and not overlap the one or more common wiring connection portions; and The second transparent electrode layer is provided so as to overlap on the first transparent electrode layer and also overlap on the one or more common wiring connection portions.

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