Substrate processing apparatus, nozzle, method for manufacturing semiconductor device, and program

Abstract

The invention provides a technology capable of uniformly processing the surface of a substrate. The substrate processing apparatus includes: a processing chamber for processing a substrate; a nozzle having a plurality of gas introduction parts for introducing gas into the processing chamber, and a communication part for locally communicating the gas introduction parts; and a plurality of gas supply units that supply gas to the gas introduction units.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, a nozzle, a method for manufacturing a semiconductor device and a program. Background Art

[0002] As one form of a substrate processing apparatus used in a process of manufacturing a semiconductor device, for example, a substrate processing apparatus that processes a plurality of substrates at a time is used (for example, Japanese Patent Application Laid-Open No. 2011-129879). Summary of the invention

[0003] Problems to be solved by the invention

[0004] The present disclosure provides a technology capable of uniformly processing a substrate surface.

[0005] Solutions to Solve Problems

[0006] According to one embodiment of the present disclosure, a technology is provided, which includes: a processing chamber that processes a substrate; a nozzle having a plurality of gas introduction parts that introduce gas into the processing chamber, and a connecting part that locally connects the gas introduction parts; and a plurality of gas supply parts that supply gas to the gas introduction parts.

[0007] Effects of the Invention

[0008] According to the present disclosure, it is possible to uniformly process the surface of a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a longitudinal sectional view showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.

[0010] Figure 2 It is a horizontal cross-sectional view showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.

[0011] Figure 3 This is a longitudinal cross-sectional view along the gas flow, showing a schematic configuration example of a gas supply structure and a nozzle of a substrate processing apparatus according to one embodiment of the present disclosure.

[0012] Figure 4 It is a longitudinal sectional view showing the nozzle cut perpendicularly to the air flow.

[0013] Figure 5 This is a perspective view showing a gas rectifying member of a substrate processing apparatus according to one embodiment of the present disclosure.

[0014] Figure 6 This is a longitudinal sectional view of a substrate support showing one embodiment of the present disclosure.

[0015] Fig. 7AThis is an explanatory diagram for explaining gas that can be used in one embodiment of the present disclosure.

[0016] Figure 7B This is an explanatory diagram for explaining gas that can be used in one embodiment of the present disclosure.

[0017] Figure 7C This is an explanatory diagram for explaining gas that can be used in one embodiment of the present disclosure.

[0018] Figure 8 This is an explanatory diagram for explaining a controller of a substrate processing apparatus according to one embodiment of the present disclosure.

[0019] Fig. 9 This is a flowchart for explaining a substrate processing flow according to one embodiment of the present disclosure.

[0020] Fig.10 This is a perspective view showing a gas rectifying member according to another embodiment of the present disclosure. DETAILED DESCRIPTION

[0021] Hereinafter, the implementation method of the present method will be described with reference to the accompanying drawings. The drawings used in the following description are all schematic, and the dimensional relationship of each element, the ratio of each element, etc. in the drawings are not necessarily consistent with the actual ones. In addition, the dimensional relationship of each element, the ratio of each element, etc. between multiple drawings are not necessarily consistent. In the drawings, the arrow U direction indicates the upper direction in the vertical direction, and the arrow D direction indicates the lower direction in the vertical direction.

[0022] (1) Configuration of substrate processing apparatus

[0023] Reference Figures 1 to 9 A schematic configuration of a substrate processing apparatus 100 according to one embodiment of the present disclosure will be described. Figure 1 is a side sectional view of the substrate processing apparatus 100, Figure 2 is along Figure 1 A cross-sectional view taken along the line α-α'. Figure 3 This is an explanatory diagram for explaining the relationship among the gas supply structure 212 , the nozzle 227 , the reaction tube 210 , and the heater 211 .

[0024] Next, the specific contents are described. Figure 1 As shown, the substrate processing apparatus 100 includes a housing 201 , and the housing 201 includes a reaction tube storage chamber 206 and a transfer chamber 217 . The reaction tube storage chamber 206 is disposed on the transfer chamber 217 .

[0025] The reaction tube housing chamber 206 includes: a cylindrical reaction tube 210 extending in the vertical direction; a heater 211 as a heating unit (e.g., a furnace body) provided on the outer periphery of the reaction tube 210; a gas supply structure 212 and a nozzle 227 for supplying gas; and a gas exhaust structure 213 for exhausting gas. Here, the reaction tube 210 is also referred to as a processing chamber, and the space inside the reaction tube 210 is also referred to as a processing space. The reaction tube 210 can accommodate a substrate support 300 described later.

[0026] The heater 211 is provided with a resistance heater on the inner surface opposite to the reaction tube 210 side, and a heat insulating portion is provided to surround them. Therefore, the outer side of the heater 211, that is, the side not opposite to the reaction tube 210, is configured to be less affected by heat. The heater control unit (not shown) is electrically connected to the resistance heater of the heater 211. The heater control unit can control the on / off and heating temperature of the heater 211. The heater 211 can heat the gas described later to a temperature at which it can be thermally decomposed. In addition, the heater 211 is also called a processing chamber heating unit or a first heating unit.

[0027] like Figure 1 to Figure 3 As shown, the gas supply structure 212 and the nozzle 227 are arranged upstream of the gas flow direction of the reaction tube 210, and the gas is horizontally supplied to the reaction tube 210 from the gas supply structure 212 and the nozzle 227. A gas exhaust structure 213 is arranged downstream of the gas flow direction of the reaction tube 210, and the gas in the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas supply structure 212 and the nozzle 227 are detachably fixed.

[0028] In addition, a downstream side rectifying section 215 is provided between the reaction tube 210 and the gas exhaust structure 213 to rectify the flow of the gas exhausted from the reaction tube 210. The lower end of the reaction tube 210 is supported by a manifold 216.

[0029] The reaction tube 210, the nozzle 227 and the downstream side rectifying section 215 are continuous structures and are formed of materials such as quartz, SiC, etc. They are composed of heat-transmitting components that transmit the heat radiated from the heater 211. The heat of the heater 211 is used to heat the substrate S and gas used in the semiconductor device.

[0030] When viewed from the reaction tube 210, the gas supply structure 212 is provided on the deep side of the nozzle 227. Figure 2 As shown, the gas supply structure 212 includes: a distribution portion 222 that can communicate with a gas supply pipe 251 described later, and a distribution portion 224 that can communicate with a gas supply pipe 261. In addition, the distribution portion 222 and the distribution portion 224 are passages elongated in the vertical direction, and because they can distribute the gas to each nozzle 227, they are also called gas distribution portions.

[0031] like Figure 2 As shown, the gas supply structure 212 is provided with distribution parts 222 on both sides in the width direction and two distribution parts 224 on the central side.

[0032] like Figure 2 and Figure 3 As shown, a portion of the downstream side of a gas supply pipe 251 as an example of a gas supply unit is inserted into the distribution unit 222, and a portion of the downstream side of a gas supply pipe 261 as an example of a gas supply unit is inserted into the distribution unit 224. A plurality of holes 251A for ejecting gas are formed at intervals in the vertical direction on the side of the gas supply pipe 251, and a plurality of holes 261A for ejecting gas are formed at intervals in the vertical direction on the side of the gas supply pipe 261. The holes 251A and the holes 261A can be called openings.

[0033] like Figure 2 to Figure 4 As shown, on the downstream side of the gas supply structure 212, a plurality of cylindrical nozzles 227 are stacked in the vertical direction in the same direction as the substrate S described later. The nozzles 227 are arranged in multiple stages along the height direction of the substrate holder described later. The plurality of nozzles 227 may also be referred to as one nozzle 227 whose interior is divided into a plurality of flow paths in the vertical direction.

[0034] As described later, different types of gases are supplied to the gas supply pipe 251 and the gas supply pipe 261 .

[0035] like Figure 2 and Figure 3 As shown, on the side surface of the nozzle 227 side of the gas supply structure 212, ejection holes 222c communicating with the distribution part 222 are provided at intervals in the vertical direction, and ejection holes 224c communicating with the distribution part 224 are provided at intervals in the vertical direction.

[0036] (Nozzle structure)

[0037] like Figure 2 As shown, the nozzle 227 is configured to include: a straight portion 227A extending straightly from the gas supply structure 212 to the reaction tube 210; and an expanded diameter portion 227B provided on the reaction tube 210 side of the straight portion 227A and gradually widening toward the reaction tube 210. In addition, the nozzle 227 may also be referred to as a gas ejection member for ejecting gas.

[0038] like Figure 2 , Figure 3 and Figure 5As shown, a gas rectifying component 500 is accommodated inside the nozzle 227. The gas rectifying component 500 is composed of a horizontal plate-shaped component 502 and a plurality of vertical plate-shaped components 504, which are three vertically arranged on the upper surface of the horizontal plate-shaped component 502 and three vertically arranged on the lower surface of the horizontal plate-shaped component 502 in this embodiment, a total of six, and eight gas inlet parts 506 are formed inside the nozzle 227. The gas inlet part 506 is a passage through which gas passes. The portion of the nozzle 227 where the gas rectifying component 500 is arranged can be called a gas rectifying part. In addition, since the gas rectifying component 500 is composed of the horizontal plate-shaped component 502 and the vertical plate-shaped component 504, the flow path resistance of the gas flowing through the nozzle 227 can be reduced.

[0039] like Figure 2 As shown, the longitudinal plate-like member 504 extends linearly at the portion of the straight portion 227A disposed at the nozzle 227. In addition, in the portion of the longitudinal plate-like member 504 disposed at the enlarged diameter portion 227B of the nozzle 227, the central longitudinal plate-like member 504 extends linearly in the same direction as the portion disposed at the straight portion 227A. In addition, in the portion of the enlarged diameter portion 227B disposed at the nozzle 227, the longitudinal plate-like members 504 on both sides in the nozzle width direction are provided on one side of the reaction tube 210 and are inclined so that the interval between them and the central longitudinal plate-like member 504 becomes wider. The inclined longitudinal plate-like members 504 on both sides are oriented in the width direction of the substrate S housed in the reaction tube 210 (the same direction as the width direction of the nozzle 227; Figure 2 That is, the longitudinal plate-like members 504 on both sides extend outward in the width direction from the upstream side to the downstream side of the flow of the processing gas.

[0040] like Figure 4 As shown, in the present embodiment, the cross-sectional areas (areas when viewed from a cross section perpendicular to the gas flow) of the gas introduction portions 506 disposed in the straight portion 227A of the nozzle 227 are substantially the same.

[0041] like Figure 2 , Figure 3 , Figure 5 As shown, the gas rectifying member 500 is provided with a wall 508 at the end portion on the gas supply structure 212 side, and a hole 510 communicating with the ejection hole 222 c and the ejection hole 224 c of the gas supply structure 212 is formed in the wall 508 .

[0042] Furthermore, in the gas rectifying member 500 , walls 512 are provided at the boundary positions between the linear portion and the inclined portion of the vertical plate-shaped member 504 , and holes 514 through which gas passes are formed in each wall 512 .

[0043] Two convex portions 502A are formed at intervals on the side ends of both sides in the width direction of the horizontal plate-shaped member 502. The convex portions 502A contact the inner wall surface of the nozzle 227, thereby Figure 4 As shown, a connecting portion 518 having a width Wa is formed between the side end of the horizontal plate-shaped member 502 and the inner wall surface of the nozzle 227. The connecting portion 518 is partially provided between the side end of the horizontal plate-shaped member 502 and the inner wall surface of the nozzle 227. The number of the convex portions 502A provided on the side end of the horizontal plate-shaped member 502 may be one or more than three.

[0044] Two convex portions 504A are formed at intervals on the side ends of both sides in the width direction of the longitudinal plate-like member 504. The convex portions 504A abut against the inner wall surface of the nozzle 227, thereby Figure 4 As shown, a connecting portion 520 having a width Wb is formed between the side end of the longitudinal plate-shaped member 504 and the inner wall surface of the nozzle 227. The connecting portion 520 may be partially provided between the side end of the longitudinal plate-shaped member 504 and the inner wall surface of the nozzle 227. The number of the convex portions 504A provided at the side end of the longitudinal plate-shaped member 504 may be one or more than three.

[0045] In this way, by housing the gas rectifying member 500 in the nozzle 227, among the four gas introduction parts 506 arranged side by side in the horizontal direction, a part of the gas passing through one gas introduction part 506 can enter another gas introduction part 506 from a gas introduction part 506 adjacent in the horizontal direction via the connecting part 520. In addition, a part of the gas passing through another gas introduction part 506 can enter one gas introduction part 506 from another gas introduction part 506 adjacent in the horizontal direction via the connecting part 520.

[0046] In addition, of the two gas introduction parts 506 adjacent in the vertical direction on both sides of the nozzle width direction, a part of the gas passing through the upper gas introduction part 506 can enter the lower gas introduction part 506 from the upper gas introduction part 506 via the connecting part 518 of the horizontal plate-shaped member 502. In addition, a part of the gas passing through the lower gas introduction part 506 can enter the upper gas introduction part 506 from the lower gas introduction part 506 via the connecting part 518.

[0047] As an example, when gas is supplied to the gas inlet parts 506 on both sides of the width direction of the nozzle 227, gas is ejected toward the substrate S from the gas inlet parts 506 on both sides of the width direction, and gas can also be ejected toward the substrate S from the two gas inlet parts 506 on the inner side of the width direction. In a manner that forms a wide flow that is symmetrical on the left and right, that is, each gas inlet part 506 is partially connected through the connecting part 520, and the longitudinal plate-shaped parts 504 on both sides expand from the upstream side of the flow of the processing gas toward the downstream side toward the outer side in the width direction, so that the gas can flow in a manner that forms a wide flow that is symmetrical on the left and right with the substrate S as the center. In addition, Figure 2 The arrows in the figure indicate the flow of gas.

[0048] Therefore, the gas supplied from the gas supply structure 212 to the nozzle 227 can be regulated by the gas rectifying member 500 and supplied to the surface of the substrate S.

[0049] The communication portion 518 and the communication portion 520 may be referred to as gaps or slits.

[0050] (Downstream side rectification section)

[0051] like Figure 1 As shown, the downstream side rectifying portion 215 is configured such that, when the substrate S is supported by the substrate support 300 , the top portion is higher than the position of the uppermost substrate S arranged on the substrate support 300 , and the bottom portion is configured such that the bottom portion is lower than the position of the lowermost substrate S arranged on the substrate support 300 .

[0052] The downstream side rectifying section 215 has a frame 231 and a dividing plate 232. The portion of the dividing plate 232 that is opposite to the substrate S extends in the horizontal direction in a manner that is at least larger than the diameter of the substrate S. The horizontal direction here refers to the side wall direction of the frame 231. In addition, a plurality of dividing plates 232 are arranged in the vertical direction. The dividing plate 232 is fixed to the side wall of the frame 231, and is configured so that the gas does not move beyond the dividing plate 232 and reach the adjacent area below or above. By not exceeding the dividing plate, the airflow described later can be reliably formed. A flange 233 is provided on the side of the frame 231 that contacts the gas exhaust structure 213.

[0053] The dividing plate 232 is a continuous structure without holes. The center positions between the dividing plates 232 and 232 are respectively set at positions corresponding to the substrate S, and are positions corresponding to the center positions of the nozzles 227 in the vertical direction. Through such a structure, the gas supplied from each nozzle 227 forms a flow through the substrate S and the dividing plate 232 as shown by the arrows in the figure. At this time, the dividing plate 232 extends in the horizontal direction and is a continuous structure without holes. By setting it to such a structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Therefore, the airflow of the gas passing through each substrate S is suppressed from flowing in the vertical direction, and is formed into a flow in the horizontal direction toward the gas exhaust structure 213.

[0054] By setting the dividing plate 232 corresponding to the nozzle 227, the pressure loss in the vertical direction upstream and downstream of each substrate S can be made uniform, so that a horizontal airflow that suppresses the flow in the vertical direction can be reliably formed on the nozzle 227, the substrate S and the dividing plate 232.

[0055] A gas exhaust structure 213 is provided downstream of the downstream side rectifying section 215. The gas exhaust structure 213 is mainly composed of a frame 241 and a gas exhaust pipe connection section 242. A flange 243 is provided on the frame 241 on the downstream side rectifying section 215 side.

[0056] The gas exhaust structure 213 is connected to the space of the downstream side rectifying section 215. The frame 231 and the frame 241 have a highly continuous structure. The top of the frame 231 is configured to have the same height as the top of the frame 241, and the bottom of the frame 231 is configured to have the same height as the bottom of the frame 241.

[0057] The gas passing through the downstream side rectifying section 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure does not have a structure such as a partition plate, an airflow including a vertical direction is formed toward the exhaust hole 244.

[0058] The transfer chamber 217 is provided at the lower part of the reaction tube 210 via the manifold 216. In the transfer chamber 217, a substrate S is horizontally placed (e.g., mounted) on a substrate support (hereinafter sometimes referred to as a wafer boat) 300 by a vacuum transfer robot (not shown), or a substrate S is taken out from the substrate support 300 by a vacuum transfer robot.

[0059] like Figure 1 As shown, the interior of the transfer chamber 217 can accommodate Figure 6 The substrate support member 300, the partition support part 310, and the vertical direction driving mechanism part 400 constituting the first driving part are shown. The first driving part is used to drive the substrate support member 300 and the partition support part 310 (collectively referred to as a substrate holder) in the vertical direction and the rotation direction. Figure 1 The state where the substrate holder is lifted up by the vertical direction driving mechanism unit 400 and is accommodated in the reaction tube is shown.

[0060] Next, refer to Figure 1 , Figure 6 The details of the substrate support portion which is a member for supporting the substrate S will be described.

[0061] The substrate support portion is composed of at least a substrate support member 300, and the substrate S is transferred through a substrate transfer port (not shown) by a vacuum transfer robot inside the transfer chamber 217, and the transferred substrate S is transferred to the inside of the reaction tube 210, and then a thin film is formed on the surface of the substrate S. In addition, it can also be considered that the substrate support portion includes a partition support portion 310.

[0062] In the partition support part 310, a plurality of disk-shaped partitions 314 are fixed to pillars 313 at predetermined intervals, and the pillars 313 are supported between a base 311 and a top plate 312. The substrate support 300 has the following configuration: a plurality of support rods 315 are supported on the base 311, and a plurality of substrates S are supported by the plurality of support rods 315 at predetermined intervals.

[0063] like Figure 6 As shown, a plurality of substrates S are horizontally placed on a substrate support 300 at predetermined intervals through a plurality of support rods 315 supported by a base 311. The plurality of substrates S supported by the support rods 315 are separated by a disk-shaped partition 314, and the disk-shaped partition 314 is fixed (e.g., supported) on a support column 313 supported by a partition support portion 310 at predetermined intervals. Here, the partition 314 is provided on either or both of the upper portion and the lower portion of the substrate S.

[0064] The predetermined interval between the plurality of substrates S horizontally placed on the substrate support 300 is the same as the vertical interval between the partitions 314 fixed to the partition support part 310. In addition, the diameter of the partition 314 is formed to be larger than the diameter of the substrate S.

[0065] The substrate support 300 supports a plurality of, for example, five, substrates S in multiple stages along the vertical direction using a plurality of support rods 315. The base 311 and the plurality of support rods 315 are formed of, for example, quartz, SiC, or the like. Although an example of five substrates S being supported by the substrate support 300 is shown here, it is not limited thereto. For example, the substrate support 300 may be configured to support approximately 5 to 50 (more than 5 and less than 50) substrates S.

[0066] like Figure 1As shown, the partition support 310 and the substrate support 300 are driven in the vertical direction between the reaction tube 210 and the transfer chamber 217 and in the rotation direction around the center of the substrate S supported by the substrate support 300 by the vertical direction driving mechanism 400 .

[0067] The vertical driving mechanism 400 constituting the first driving unit includes, as a driving source, a vertical driving motor 410 , a rotation driving motor 430 , and a boat vertical mechanism 420 having a linear actuator as a substrate support lifting mechanism for driving the substrate support 300 in the vertical direction.

[0068] (Gas supply system)

[0069] like Figure 2 and Figure 3 As shown, as an example, in this embodiment, various gases may be supplied to the distribution parts 222 on both sides in the width direction via the gas supply pipe 251 , and various gases may be supplied to the distribution part 222 on the center side via the gas supply pipe 261 .

[0070] In addition, connected upstream of the gas supply pipe 251 are a gas source of a known structure in a substrate processing apparatus, a mass flow controller (MFC) as a flow controller (flow control unit), and a valve as an on-off valve (all omitted from the figure).

[0071] As an example, the gas supply pipe 251 is connected to a first gas source for supplying a first gas containing a first element (also referred to as "first element-containing gas"), a second gas source for supplying a second gas containing a second element (also referred to as "second element-containing gas"), and an inert gas source for supplying an inert gas. An inert gas such as nitrogen (N2) gas is supplied from the inert gas source. The inert gas may also be a gas other than nitrogen (N2) gas.

[0072] The first gas is a raw material gas, i.e., a processing gas. Here, the first gas is, for example, a gas in which at least two silicon atoms (Si) are bonded together, such as a gas containing Si and chlorine (Cl), and can be used, for example Fig. 7A The raw material gas containing Si-Si bonds such as hexachlorodisilane (Si2Cl6, hexachlorodisilane, abbreviated as HCDS) gas described in the specification may also be used. Fig. 7A As shown, HCDS gas contains Si and chlorine groups (chloride) in its chemical formula (in one molecule).

[0073] The energy of the Si-Si bond is such that it can be decomposed when it collides with the wall of a recessed portion (not shown) such as a groove of the substrate S described later in the reaction tube 210. Here, decomposition means breaking the Si-Si bond. That is, the Si-Si bond is broken due to the collision with the wall.

[0074] In addition, the second element-containing gas is a type of processing gas. In addition, the second element-containing gas can be considered as a reaction gas or a modifying gas.

[0075] Here, the second element-containing gas contains a second element different from the first element. As the second element, for example, it is any one of oxygen (O), nitrogen (N) and carbon (C). In this method, the second element-containing gas is, for example, a nitrogen-containing gas. Specifically, a nitride-based gas containing an NH bond, such as ammonia (NH3), diimide (N2H2) gas, hydrazine (N2H4) gas, and N3H8 gas, can be used, but other gases can also be used.

[0076] In addition, the inert gas supplied from the inert gas source is used as a purge gas for purifying gases remaining in various pipes, the nozzle 227 and the reaction tube 210 during the substrate processing process.

[0077] (Exhaust system)

[0078] Next, the exhaust system will be described.

[0079] like Figure 1 As shown, an exhaust system (not shown) for exhausting the atmosphere in the reaction tube 210 is connected to the gas exhaust pipe connection portion 242 .

[0080] The exhaust system is connected to a vacuum pump as a vacuum exhaust device via a valve as an on-off valve and an APC (AutoPressure Controller) valve as a pressure regulator (e.g., a pressure regulating unit), and is configured to perform vacuum exhaust so that the pressure in the reaction tube 210 becomes a predetermined pressure (e.g., vacuum degree). The exhaust system is also called a process chamber exhaust system.

[0081] (Controller)

[0082] The substrate processing apparatus 100 has a control unit for controlling the operation of each unit of the substrate processing apparatus 100. Figure 8 Controller 600 is shown.

[0083] The controller 600 as a control unit (control unit) is composed of a computer including a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage unit 603 as a storage unit, and an I / O port 604. The RAM 602, the storage device 603, and the I / O port 604 are configured to exchange data with the CPU 601 via an internal bus 605. The transmission and reception of data in the substrate processing apparatus 100 is performed according to an instruction from a transmission and reception instruction unit 606 which is also one of the functions of the CPU 601.

[0084] The controller 600 is provided with a network transceiver 683 connected to the host device 670 via a network. The network transceiver 683 can receive information such as the processing history of the substrates S stored in a cassette (not shown) and information related to a scheduled process from the host device 670.

[0085] The storage unit 603 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage unit 603 stores a control program for controlling the operation of the substrate processing apparatus, a recipe recording steps or conditions for substrate processing, and the like in a readable manner.

[0086] The process recipe is a combination of steps in the substrate processing process described later executed by the controller 600 to obtain a predetermined result, and has the function of a program. Hereinafter, the process recipe or control program, etc. are collectively referred to as a program. In this specification, when the term "program" is used, it may include only a separate process recipe, only a separate control program, or both. In addition, the RAM 602 is configured as a storage area (e.g., a work area) for temporarily storing programs or data read by the CPU 601.

[0087] The I / O port 604 is connected to each component of the substrate processing apparatus 100. The CPU 601 is configured to read and execute a control program from the storage unit 603, and read a process recipe from the storage unit 603 according to input of an operation instruction from the input / output device 681 or the like. The CPU 601 is configured to be able to control the substrate processing apparatus 100 according to the contents of the read process recipe.

[0088] CPU601 has a sending and receiving instruction unit 606. The controller 600 uses an external storage device (such as a disk such as a hard disk, an optical disk such as a DVD, an optical disk such as an MO, a semiconductor memory such as a USB memory) 682 storing the above-mentioned program to install the program in the computer, thereby being able to constitute the controller 600 of this mode. In addition, the device (means) for providing the program to the computer is not limited to providing it via the external storage device 682. For example, the program can be provided by using a communication device (such as a communication means) such as the Internet or a dedicated line, without using the external storage device 682. In addition, the storage unit 603 and the external storage device 682 can be configured as a computer-readable storage medium. Hereinafter, these will be collectively referred to as storage media. In this specification, when the term "storage medium" is used, it may include only a separate storage unit 603, may include only a separate external storage device 682, or may include both.

[0089] (Processing steps)

[0090] Next, as one process of semiconductor manufacturing process, a process of forming a thin film on a substrate S using the substrate processing apparatus 100 configured as described above will be described. In the following description, the operation of each unit constituting the substrate processing apparatus is controlled by the controller 600 .

[0091] Here, refer to Fig. 9 A film forming process of forming a film on the substrate S by alternately supplying the first gas and the second gas will be described.

[0092] (S202)

[0093] First, the transfer chamber pressure adjustment step S202 is described. Here, the pressure in the transfer chamber 217 is set to a vacuum level. Specifically, the exhaust system (not shown) connected to the transfer chamber 217 is operated to exhaust the atmosphere of the transfer chamber 217 so that the atmosphere of the transfer chamber 217 reaches a vacuum level.

[0094] The heater 211 may be operated in parallel with this step. When the heater 211 is operated, it is operated at least during the film treatment step S208 described later.

[0095] (S204)

[0096] Next, the substrate carrying-in step S204 (an example of a step of carrying-in a substrate in the present disclosure) will be described.

[0097] The transfer chamber 217 is set to a vacuum level, and the substrate S is transferred into the transfer chamber 217 from an adjacent vacuum transfer chamber (not shown).

[0098] At this time, the substrate support 300 is on standby in the transfer chamber 217, and the substrate S is transferred to the substrate support 300. After a predetermined number of substrates S have been transferred to the substrate support 300, the vacuum transfer robot retracts and raises the substrate support 300 to move the substrate S into the reaction tube 210.

[0099] During the movement to the reaction tube 210 , the substrate S is positioned to be aligned with the height of the nozzle 227 .

[0100] (S206)

[0101] The heating step S206 is described. After the substrate S is moved into the reaction tube 210, the heater 211 is controlled so that the surface temperature of the substrate S reaches a predetermined temperature. As an example, the temperature is a high temperature zone described later, for example, heated to 400°C or more and 800°C or less. The temperature is preferably 500°C or more and 700°C or less, but is not limited to these temperatures.

[0102] (S208)

[0103] The film treatment process S208 is described. After the heating process S206, the film treatment process of S208 is performed. In the film treatment process S208, the first gas is supplied into the reaction tube 210 according to the process recipe, and the exhaust system 280 is controlled to exhaust the treatment gas from the reaction tube 210 to perform film treatment. The film treatment process S208 is equivalent to the process of supplying the treatment gas to the substrate S in the present disclosure. Here, the first gas and the second gas can be alternately supplied into the reaction tube 210 for alternating supply treatment, or the second gas and the first gas are simultaneously present in the treatment space for CVD treatment. The supply and exhaust of the gas are controlled so that the interior of the reaction tube 210 reaches a predetermined pressure.

[0104] As a specific example of the alternating supply process of the film processing method, the following method can be considered. For example, in the first step, a first gas is supplied into the reaction tube 210, and in the second step, a second gas is supplied into the reaction tube 210, and as a purge process, an inert gas is supplied into the reaction tube 210 between the first step and the second step, and the atmosphere in the reaction tube 210 is exhausted, and the desired film is formed by performing the alternating supply process combining the first step, the purge step, and the second step multiple times.

[0105] The supplied gas forms an optimal gas flow for processing the substrate S due to the nozzle 227 , the space above the substrate S, and the downstream side rectifying unit 215 .

[0106] For example, when the first gas is supplied into the reaction tube 210, the first gas is supplied to at least two gas introduction parts 506. Here, the first gas is supplied to the nozzle 227 from the distribution parts 222 on both sides. The first gas supplied from the distribution part 222 flows to the reaction tube 210 through the gas introduction parts 506 on both sides of the nozzle, and a part of it flows to the gas introduction part 506 on the central side of the adjacent nozzle through the connecting part 520 of the longitudinal plate-shaped part 504. Thus, the same amount of the first gas can be discharged along the surface of the substrate S at the same speed from the downstream side ends of the gas introduction parts 506 on both sides and the downstream side ends of the gas introduction part 506 on the central side. In addition, the nozzle 227 has a connecting part 520 as a connecting part, and the longitudinal plate-shaped parts 504 on both sides extend from the upstream side of the flow of the processing gas toward the downstream side and outward in the width direction, so that the first gas is supplied to the surface of the substrate S to form a wide flow that is symmetrical with respect to the substrate S. In addition, the first gas is horizontally ejected from the nozzle 227 and supplied in parallel along the surface of the horizontally arranged substrate S, so that the surface of the substrate S is uniformly processed.

[0107] like Figure 2 As shown, the inclined longitudinal plate-like members 504 on both sides are oriented in the width direction of the substrate S housed in the reaction tube 210 (the same direction as the width direction of the nozzle 227; Figure 2 Therefore, the flow of the first gas supplied to the surface of the substrate S is rectified by the gas rectifying member 500 to become a wide flow that is symmetrical on both sides, so that the entire surface of the substrate S can be uniformly treated using the first gas. Figure 1 As shown, the nozzles 227 are arranged in multiple stages in the height direction of the substrate holder, and the nozzles 227 are provided for each substrate S, so that each substrate S can be processed uniformly.

[0108] like Figure 4As shown, in the nozzle 227, by setting the width Wb of the connecting portion 520 to 5 to 10% (5 or more and 10 or less) of the lateral width WA of the gas inlet portion 506, the amount of gas flowing from the gas inlet portions 506 on both sides in the nozzle width direction to the gas inlet portion 506 on the central side in the nozzle width direction can be optimized. When the width Wb of the connecting portion 520 is set to be less than 5% of the lateral width WA of the gas inlet portion, the directivity of the gas becomes stronger, and the flow of the gas becomes stronger in the direction of the longitudinal plate-shaped member 504 which is provided on the side of the reaction tube 210 and is provided to be inclined so as to widen the interval with the central longitudinal plate-shaped member 504. In addition, if the width Wb of the connecting portion 520 is set to be more than 10% of the lateral width WA of the gas inlet portion 506, the directivity of the gas becomes weaker and the gas flow toward the central part of the wafer 200 becomes stronger. As a result, the amount and speed of the first gas discharged from each gas introduction unit 506 toward the substrate S can be made uniform, and the average flow rate of the gas discharged from each gas introduction unit 506 can be increased.

[0109] When the second gas is supplied into the reaction tube 210 , the gas flow is rectified by the gas rectifying member 500 in the same manner as when the first gas is supplied into the reaction tube 210 , so that the entire surface of the substrate S can be uniformly processed.

[0110] In addition, if the speed of the gas ejected from each gas inlet is different for each gas inlet, in other words, if there is a gas inlet with an excessively high gas speed, an eddy current will be generated on the downstream side of the gas inlet, and multiple adsorption will occur at a specific portion of the substrate S, which may generate a singular point. In addition, if the gas speed is too high, when processing a substrate S having a groove (e.g., a concave portion; not shown) formed on the surface, it is difficult for the gas to reach the bottom of the groove, resulting in poor processing at the groove bottom.

[0111] However, in the nozzle 227 of the present embodiment, the amount and flow rate of the gas discharged from each gas introduction portion 506 toward the substrate S can be made uniform, so the generation of singular points and the generation of processing defects at the groove bottom can be suppressed.

[0112] As described above, according to the present disclosure, one or more effects can be obtained.

[0113] (S210)

[0114] The substrate unloading step S210 is described. In S210, the processed substrate S is unloaded to the outside of the transfer chamber 217 in a procedure opposite to the above-mentioned substrate loading step S204.

[0115] (S212)

[0116] Determination S212 is described. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the processing has not been performed the predetermined number of times, the process returns to the substrate carrying step S204 and processes the next substrate S. When it is determined that the processing has been performed the predetermined number of times, the process ends.

[0117] In the above description, there are expressions such as the same degree, equivalent, equivalent and the like, but it goes without saying that these expressions include those that are substantially the same.

[0118] (One of the other gas supply methods)

[0119] In the nozzle 227 of the present embodiment, the first gas or the second gas may be diluted with an inert gas (eg, nitrogen gas (N 2 )) and then supplied to the substrate S.

[0120] For example, the inert gas is supplied to the gas inlet 506 other than the at least two gas inlet 506 for supplying the process gas. When the first gas is diluted with the inert gas, the first gas is supplied from the distribution part 222 to the gas inlet 506 on both sides of the nozzle, and the inert gas is supplied from the distribution part 224 to the gas inlet 506 on the central side of the gas.

[0121] Thus, a portion of the first gas flowing through the gas introduction parts 506 on both sides of the nozzle enters the gas introduction part 506 on the center side of the adjacent nozzle through the connecting part 520 of the vertical plate-shaped member 504, and a portion of the inert gas flowing through the gas introduction part 506 on the center side of the nozzle enters the gas introduction parts 506 on both sides of the adjacent nozzle through the connecting part 520. Thus, in each gas introduction part 506, the first gas and the inert gas are uniformly mixed in the gas introduction part 506 before reaching the end of the downstream side of each gas introduction part 506, and the first gas uniformly diluted with the inert gas can be supplied to the substrate S from each gas introduction part 506.

[0122] In order to avoid excessive dilution of the process gas, the flow rate of the inert gas is preferably, for example, 10% or less of the flow rate of the process gas.

[0123] (Other gas supply methods 2)

[0124] In addition, in the nozzle 227 of the present embodiment, a plurality of different types of gases, for example, a first gas and a second gas are mixed inside the nozzle 227 , and a mixed gas obtained by mixing the first gas and the second gas may be discharged toward the substrate S.

[0125] In this case, as an example, the first gas is supplied to any one of the at least two gas inlet parts 506, for example, the gas inlet part 506 on the center side of the nozzle, and the second gas is supplied to any other adjacent gas inlet part. Thus, the first gas and the second gas move back and forth between one gas inlet part 506 on the center side of the nozzle and another gas inlet part 506 via the connecting part 520 of the longitudinal plate-shaped member 504. Thus, the first gas and the second gas are uniformly mixed before reaching the end of the downstream side of the gas inlet part 506, and the mixed gas further enters the gas inlet parts 506 on both sides of the nozzle width direction, and the mixed gas can be discharged from each gas inlet part 506 to the substrate S before reaching the end of the downstream side. Thus, the entire surface of the substrate S can be uniformly treated by the mixed gas.

[0126] In addition, an inert gas may be supplied to gas inlet parts 506 (here, gas inlet parts 506 on both sides of the nozzle) other than two adjacent gas inlet parts 506 supplying different types of gases to dilute the mixed gas. At this time, the flow rate of the inert gas is preferably less than 50% of the flow rate of the mixed gas mixed with the two processing gases (in order to prevent excessive dilution). If the flow rate of the inert gas is more than 50% of the flow rate of the mixed gas mixed with the two processing gases, the mixed gas will be excessively diluted. In addition, when the flow rate of the inert gas is more than 50% of the flow rate of the mixed gas mixed with the two processing gases, the diluted mixed gas flowing out from the gas inlet parts 506 on both sides of the nozzle supplied with the inert gas will be more than the diluted mixed gas flowing out from the center side of the nozzle.

[0127] In the substrate processing apparatus 100 of the present embodiment, different types of gases are mixed inside the nozzle 227 , so different types of gases are not mixed in each distribution part, and thus generation of particles caused by gas mixing in each distribution part can be suppressed.

[0128] (Other methods)

[0129] As mentioned above, although embodiment of this invention is specifically described, this invention is not limited to this, Various changes are possible within the range which does not deviate from the summary of this invention.

[0130] In addition, for example, in each of the above-mentioned embodiments, in the film forming process performed by the substrate processing device 100, the case of using the first gas and the second gas to form a film on the substrate S is described as an example. However, the present description is not limited to this. In other words, other types of thin films can be formed by using other types of gases as the processing gas used in the film forming process. In addition, even when more than three processing gases are used, the present embodiment can be applied as long as these gases are alternately supplied to perform the film forming process. Specifically, various elements such as titanium (Ti), silicon (Si), zirconium (Zr) and hafnium (Hf) can be used as the first element. In addition, the second element can be, for example, nitrogen (N), oxygen (O), etc. In addition, as the first element, Si is more preferably used as described above.

[0131] Here, an example of using HCDS gas as the first gas is described, but the gas is not limited thereto as long as it contains silicon and has a Si-Si bond, for example, tetrachlorodimethyldisilane ((CH3)2Si2Cl4, abbreviation: TCDMDS) and dichlorotetramethyldisilane ((CH3)4Si2Cl2, abbreviation: DCTMDS) can be used. Figure 7B As shown in FIG. 1 , TCDMDS has a Si-Si bond and also contains a chloro group and an alkylene group. Figure 7C As shown, DCTMDS has a Si-Si bond and also contains a chloro group and an alkylene group.

[0132] In addition, for example, in each of the above-mentioned embodiments, a film forming process is described as an example of a process performed by a substrate processing device, but the present description is not limited to this. That is, in addition to the film forming method illustrated in each embodiment, the present description can also be applied to film forming processes other than the thin film illustrated in each embodiment. In addition, a part of the structure of one embodiment can be replaced with a structure of another embodiment, or a structure of another embodiment can be added to a structure of one embodiment. In addition, a part of the structure of each embodiment can also be added, deleted, or replaced with another structure.

[0133] In the above embodiment, four gas inlet portions 506 are arranged inside the nozzle 227 along the nozzle width direction, but the number of longitudinal plate-shaped parts 504 arranged in the gas rectification part 500 can be increased to set more than five gas inlet portions 506 in the nozzle width direction, and the number of gas rectification parts 500 can be increased or decreased as needed.

[0134] In either case, the gas can be supplied to at least two of the plurality of gas introduction sections 506. In addition, the gas can be supplied to three or more gas introduction sections 506 as necessary.

[0135] In the above embodiment, the gas rectifying member 500 is disposed inside the nozzle 227, the inside of the nozzle is divided into two parts in the vertical direction, and four gas introduction parts 506 are arranged in a horizontal arrangement on each side of the upper side and the lower side. The inside of the nozzle 227 can be divided into two parts, upper and lower parts, as needed, or the inside of the nozzle 227 may not be divided into two parts, upper and lower parts.

[0136] In the above embodiment, it is described that when the first gas and the second gas are supplied to the substrate S respectively, the gas is not supplied to the gas introduction part 506 on the central side in the nozzle width direction, but only to the gas introduction parts 506 on both sides in the nozzle width direction. However, it is also possible to supply gas only to the gas introduction part 506 on the central side in the nozzle width direction instead of supplying gas to the gas introduction parts 506 on both sides in the nozzle width direction. In this case, the same amount of the first gas or the second gas can be discharged along the surface of the substrate S at the same speed from the downstream side ends of the gas introduction parts 506 on both sides and the downstream side end of the gas introduction part 506 on the central side.

[0137] In the gas rectifying member 500 of the above-mentioned embodiment, since the connecting portion 518 is provided at the width direction end side of the horizontal plate-shaped member 502, for example, the gases flowing through the upper and lower gas introduction portions 506 provided on both sides in the width direction of the nozzle can enter each other through the connecting portion 518. Therefore, as an example, by supplying the first gas to any one of the upper and lower gas introduction portions 506 and supplying the second gas to any other of the upper and lower gas introduction portions 506, the first gas and the second gas can be mixed in the nozzle 227, and the mixed gas can be discharged from the upper and lower gas introduction portions 506 toward the substrate S. In this case, it is necessary to change the structure of the gas supply structure 212 so that different types of gases are supplied to the upper gas introduction portion 506 and the lower gas introduction portion 506.

[0138] Furthermore, when the same gas is supplied to the upper and lower gas inlet portions 506 on both sides of the nozzle width direction, it is not necessary to mix the gas in the nozzle 227, so the connecting portion 518 on the width direction end side of the horizontal plate-shaped member 502 can be omitted.

[0139] In the gas rectification component 500, as an example, the diameter of the hole 514 on the downstream side wall 512 corresponding to the gas inlet parts 506 on both sides of the nozzle width direction can be smaller than the diameter of the hole 514 on the downstream side wall 512 corresponding to the two gas inlet parts 506 on the central side of the nozzle width direction.

[0140] As a result, the passage resistance of the gas through the holes 514 on the wall 512 corresponding to the gas introduction parts 506 on both sides of the nozzle width direction is greater than the passage resistance of the gas through the holes 514 on the wall 512 corresponding to the gas introduction parts 506 on the central side of the nozzle width direction, and the internal pressure of the gas introduction parts 506 on both sides of the nozzle width direction is relatively higher than the internal pressure of the gas introduction part 506 on the central side of the nozzle width direction. As a result, the amount of gas entering the gas introduction part 506 on the central side of the nozzle width direction from the gas introduction parts 506 on both sides of the nozzle width direction through the connecting part 520 can be increased.

[0141] That is, by changing the diameter of the hole 514 , it is possible to control the amount of gas that enters from one of the gas introduction sections 506 adjacent to each other through the communication section 520 into the other gas introduction section 506 .

[0142] In the nozzle 227 , by changing the width Wa of the communication portion 520 , the amount of gas passing through the communication portion 520 can be controlled.

[0143] In the gas rectifying component 500 described in the above embodiment, the wall 512 is provided on the downstream side, but the wall 512 may also be provided as required, such as Fig.10 As shown, the wall 512 may not be provided. In addition, the wall 508 on the upstream side may be provided or not provided as required. Fig.10 In the gas rectifying component 500 shown in FIG. Figure 5 The same components of the gas rectifying member 500 are denoted by the same reference numerals, and description thereof will be omitted.

[0144] The connecting portion 518 and the connecting portion 520 may be provided at necessary locations so that the flow of the processing gas becomes a wide flow that is bilaterally symmetrical with respect to the substrate S.

[0145] The nozzles 227 may be stacked according to the number of substrates S to be processed, and only one nozzle 227 is required when processing one substrate S. The present disclosure may also be applied to the case of processing one substrate S, and the same effects as those of the above embodiment may be obtained.

[0146] In addition, in the above-mentioned embodiment, the gas rectifying member 500 is formed of a plate-shaped member, but may be formed of a member other than a plate-shaped member.

[0147] The term "substrate" used in this specification may refer to the substrate itself, or may refer to a laminate of a substrate and a predetermined layer or film formed on the surface thereof. The term "surface of a substrate" used in this specification may refer to the surface of the substrate itself or the surface of a predetermined layer, etc. formed on the substrate. In this specification, "a predetermined layer formed on a substrate" means a predetermined layer formed directly on the surface of a substrate, or a predetermined layer formed on a predetermined layer, etc. formed on a substrate. The term "substrate" used in this specification is synonymous with the term "wafer".

[0148] Furthermore, although not specifically described in the above-described embodiments, each element is not limited to one, and a plurality of elements may exist unless otherwise described in the specification.

[0149] In addition, in the above-mentioned embodiment, an example of forming a film using a substrate processing device that processes a plurality of substrates is described. The present disclosure is not limited to the above-mentioned embodiment, and can be appropriately applied to, for example, a case where a film is formed using a substrate processing device that processes one substrate. In addition, the present disclosure can be applied to a substrate processing device having a cold wall type processing furnace and a substrate processing device having a hot wall type processing furnace, and can be applied to a substrate processing device having a nozzle that blows out a processing gas along a substrate.

[0150] Even when these substrate processing apparatuses are used, each process can be performed under the same process steps and process conditions as those in the above-described embodiment and modification examples, and the same effects as those in the above-described embodiment and modification examples can be obtained.

[0151] In addition, the above-mentioned embodiments and modified examples may be used in combination as appropriate. The processing steps and processing conditions in this case may be the same as those of the above-mentioned embodiments and modified examples, for example.

[0152] Explanation of symbols

[0153] 100—substrate processing device; 210—reaction tube (processing chamber); 227—nozzle; 251—gas supply pipe (gas supply part); 506—gas introduction part; 518—connecting part; 520—connecting part.

Claims

1. A substrate processing device, characterized in that: have: a processing chamber that processes a substrate; a nozzle having a plurality of gas introduction parts for introducing gas, and a connecting part for locally connecting the plurality of gas introduction parts; and A plurality of gas supply parts supply gas to the gas introduction part.

2. The substrate processing device according to claim 1, characterized in that: A plurality of gas introduction portions are formed by a gas rectifying member disposed inside the nozzle, The communication portion is provided between an inner wall of the nozzle and an outer edge of the gas rectifying member.

3. The substrate processing device according to claim 1 or 2, characterized in that: The gas is supplied from the gas supply portion to at least two of the plurality of gas introduction portions.

4. The substrate processing device according to claim 3, characterized in that: An inert gas is supplied from the gas supply part to the gas introduction part other than the gas introduction part for supplying the processing gas among the gases.

5. The substrate processing device according to claim 4, characterized in that: The flow rate of the inert gas supplied from the gas supply unit is 10% or less of the flow rate of the processing gas.

6. The substrate processing device according to claim 2, characterized in that: The gas rectifying member is composed of a plate-shaped member.

7. The substrate processing device according to claim 6, characterized in that: The plate-like member includes a horizontal plate-like member and a vertical plate-like member, and the horizontal plate-like member and the vertical plate-like member form a plurality of the gas introduction portions in the interior of the nozzle.

8. The substrate processing device according to claim 7, characterized in that: At least one convex portion is provided on a plate end surface of the transverse plate-shaped member or the longitudinal plate-shaped member, and the at least one convex portion contacts the inner wall of the nozzle and constitutes the communicating portion.

9. The substrate processing apparatus according to claim 1, wherein: The processing chamber includes a substrate holder capable of loading a plurality of the substrates.

10. The substrate processing apparatus according to claim 9, wherein: The nozzles are arranged in a plurality of stages in the height direction of the substrate holder.

11. The substrate processing device according to claim 1 or 2, characterized in that: The communication portion can mix the two processing gases introduced into the gas introduction portion inside the nozzle.

12. The substrate processing apparatus according to claim 11, characterized in that: When the two processing gases are mixed, the two processing gases are respectively supplied to two adjacent gas introduction parts among the plurality of gas introduction parts.

13. The substrate processing apparatus according to claim 12, wherein: An inert gas is supplied to the gas introduction parts other than two adjacent gas introduction parts among the plurality of gas introduction parts.

14. The substrate processing apparatus according to claim 13, wherein: The flow rate of the inert gas supplied from the gas supply unit is 50% or less of the flow rate of the mixed gas formed by mixing the two processing gases.

15. The substrate processing apparatus according to claim 1, wherein: The gas is supplied in parallel along the substrate surface.

16. The substrate processing apparatus according to claim 7, wherein: The vertical plate-shaped members located on both sides in the width direction expand outward in the width direction from the upstream side toward the downstream side of the flow of the processing gas.

17. The substrate processing apparatus according to claim 2, wherein: The width of the communication portion is 5 to 10% of the width of the gas introduction portion.

18. A nozzle for introducing a processing gas into a processing chamber for processing a substrate, characterized in that: have: a plurality of gas introduction parts for introducing gas; and A communication portion partially communicates the plurality of gas introduction portions.

19. A method for manufacturing a semiconductor device, characterized in that: have: The process of carrying the substrate into the processing chamber; and A step of supplying gas to a processing chamber from a nozzle having a plurality of gas introduction parts and a communication part for locally communicating the plurality of gas introduction parts.

20. A program, characterized in that The computer enables the substrate processing device to perform the following steps: The step of carrying a substrate into a processing chamber of the substrate processing apparatus; and The step of supplying gas to the processing chamber from a nozzle having a plurality of gas introduction parts and a communication part that partially communicates the plurality of gas introduction parts.

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