Illuminating lamp related to red light wave band and light emitting method related to red light wave band

Abstract

The invention provides an illumination lamp related to a red light wave band and a light emitting method related to the red light wave band, and the illumination lamp related to the red light wave band comprises at least four red light wave band chips, wherein the emission peak wavelengths of the red light wave band chips are located in the wave band range of 650 nm to 680 nm, the wave band range of 680 nm to 730 nm, the wave band range of 730 nm to 770 nm and the wave band range of 770 nm to 810 nm respectively; the half-wave width of the red light chip with at least two emission peak wavelengths located in different wave band ranges is larger than or equal to 30 nm, so that compared with an existing lamp, the light spectrum of the red light band is complemented, the actual light emitting effect of the illumination lamp related to the red light band is closer to the effect of sunlight, and the healthy illumination requirement of people is met.

Description

Technical Field

[0001] The present invention relates to the field of lighting, and in particular to a lighting fixture involving an infrared light band and a light-emitting method involving an infrared light band. Background Art

[0002] With the continuous development of LED lighting technology, lighting should not only be energy-efficient, but also healthy and comfortable light color quality is attracting more and more attention. With the continuous emergence of new technologies, people have put forward higher requirements for lighting quality and comfort, especially the requirements for healthy lighting are constantly increasing. Sunlight plays a vital role in human health, but due to the changes in production and living forms in modern society, people's outdoor activities are constantly decreasing and over-reliance on artificial lighting, so people are eager to hope that artificial lighting can present similar effects to sunlight.

[0003] Since the visible wavelength of human beings is 400nm-750nm, most of the current lighting fixtures only meet the lighting needs, and the corresponding luminous bands are concentrated in the visible light wavelength range, and the spectrum in the non-visual band is completely missing, such as Figure 1 The comparison diagram of the luminous spectrum of an existing high-CRI LED light source and the sunlight spectrum is shown. From the figure, it can be seen that the spectrum of the existing LED light source in the band greater than 650nm is seriously missing.

[0004] However, in addition to the lighting function in the visible light band, natural sunlight also has a positive impact on human visual health, physiological health and comfort. It not only affects human biological rhythms, but also has a very important positive impact on the development of eyeball emmetropia. For example, infrared rays can enhance human immunity, improve microcirculation, promote metabolism, promote wound healing, and improve skin. However, the existing lighting fixtures lack the red light band, and their actual luminous effect cannot be compared with sunlight. Modern people's long-term reliance on artificial lighting may cause physiological disorders. Summary of the invention

[0005] One object of the present invention is to provide a lighting fixture involving the red light band and a light-emitting method involving the red light band, wherein the light-emitting spectrum of the lighting fixture involving the red light band can relate to the red light band and highly restore the sunlight spectrum in the red light band to provide healthy lighting.

[0006] Another object of the present invention is to provide a lighting fixture involving the red light band and a light-emitting method involving the red light band, wherein the lighting fixture involving the red light band supplements the spectrum in the red light band relative to existing lamps, so that the actual light-emitting effect of the lighting fixture involving the red light band is closer to the effect of sunlight and meets people's healthy lighting needs.

[0007] Another object of the present invention is to provide a lighting fixture involving the red light band and a light-emitting method involving the red light band, wherein the lighting fixture involving the red light band has a higher spectral continuity in the red light band, thereby being able to better restore the sunlight spectrum and provide a light-emitting effect comparable to sunlight.

[0008] Another object of the present invention is to provide a lighting fixture involving the red light band and a light-emitting method involving the red light band, wherein the lighting fixture involving the red light band comprises at least four red light band chips, wherein the emission peak wavelengths of the four red light band chips are respectively located in different emission peak bands, so as to better restore the sunlight spectrum based on the setting of the emission peak wavelength.

[0009] Another object of the present invention is to provide a lighting fixture involving the red light band and a light-emitting method involving the red light band, wherein at least two of the four red light band chips located in different emission peak bands have a half-wave width greater than or equal to 30nm, so as to ensure the spectral continuity of the lighting fixture involving the red light band in the red light band, effectively reduce gaps and peaks in the spectrum, and thus better restore the corresponding spectrum of sunlight in the red light band.

[0010] Another object of the present invention is to provide a lighting fixture involving a red light band and a light-emitting method involving a red light band, wherein the emission peak bands of the four red light band chips are respectively an emission peak band with a starting wavelength of 650nm and an ending wavelength of 680nm, an emission peak band with a starting wavelength of 680nm and an ending wavelength of 730nm, an emission peak band with a starting wavelength of 730nm and an ending wavelength of 770nm, and an emission peak band with a starting wavelength of 770nm and an ending wavelength of 810nm, so as to meet the corresponding spectral settings based on the reasonable selection of the emission peaks of the red light band chips, thereby better restoring the spectrum of sunlight in the red light band.

[0011] Another object of the present invention is to provide a lighting fixture involving a red light band and a light-emitting method involving a red light band, wherein the emission peak wavelengths of the four red light band chips are respectively selected from 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, and are sequentially named as red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4, that is, the red light band chips with emission peak wavelengths of 666nm±5nm are respectively named as red light band chips. The red light band chip is L1, the red light band chip with an emission peak wavelength of 710nm±5nm is the red light band chip L2, the red light band chip with an emission peak wavelength of 753nm±5nm is the red light band chip L3, and the red light band chip with an emission peak wavelength of 786nm±5nm is the red light band chip L4, so that the emission peak of the spectrum of the lighting fixture involving the red light band in the red light band can be close to the peak of the sunlight spectrum in the red light band, thereby better restoring the spectrum of sunlight in the red light band.

[0012] Another object of the present invention is to provide a lighting fixture involving the red light band and a light-emitting method involving the red light band, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm, so as to ensure the spectral continuity of the lighting fixture involving the red light band in the red light band, effectively reduce gaps and peaks in the spectrum, and thus better restore the corresponding spectrum of sunlight in the red light band.

[0013] Another object of the present invention is to provide a lighting fixture involving a red light band and a light-emitting method involving a red light band, wherein the half-wave widths of the red light band chip L2 and the red light band chip L3 are greater than or equal to 45 nm, thereby being able to improve the continuity between the emission peaks formed by the red light band chip L1, the red light band chip L2, the red light band chip L3 and the red light band chip L4, avoiding a gap in the light-emitting spectrum of the lighting fixture involving the red light band in the red light band, and improving the degree of restoration of the sunlight spectrum in the red light band by the lighting fixture involving the red light band.

[0014] Another object of the present invention is to provide a lighting fixture involving an infrared light band and a light-emitting method involving an infrared light band, wherein the lighting fixture involving an infrared light band comprises at least one first band chip, wherein the emission peak wavelength of the first band chip is within the band range of 420nm to 580nm, so as to meet the coverage of the lighting fixture involving an infrared light band in the visible light band and ensure the lighting effect of the lighting fixture involving an infrared light band.

[0015] Another object of the present invention is to provide a lighting fixture involving an infrared light band and a light-emitting method involving an infrared light band, wherein the emission peak wavelength of the first band chip is selected from one of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm to match the peak distribution of the sunlight spectrum in the visible light band, thereby ensuring the lighting effect of the lighting fixture involving the infrared light band.

[0016] Another object of the present invention is to provide a lighting fixture involving an infrared light band and a light-emitting method involving an infrared light band, wherein the lighting fixture involving an infrared light band comprises at least four chips of the first waveband, and the emission peak wavelengths of the four chips of the first waveband are in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, so that the light-emitting spectrum of the lighting fixture involving an infrared light band can be close to the sunlight spectrum, so as to better restore the corresponding sunlight spectrum.

[0017] Another object of the present invention is to provide a lighting fixture involving an infrared light band and a light-emitting method involving an infrared light band, wherein the lighting fixture involving an infrared light band uses phosphors having emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm, respectively, and simultaneously performs wavelength conversion matching on the first band chip to further match the corresponding sunlight spectrum, thereby providing a lighting effect comparable to sunlight.

[0018] Another object of the present invention is to provide a lighting fixture involving a red light band and a light-emitting method involving a red light band, wherein the light-emitting method involving a red light band divides the emission peak wavelengths into four emission peak bands of 650nm to 680nm, 680nm to 730nm, 730nm to 770nm and 770nm to 810nm, and selects at least four red light band chips whose emission peak wavelengths are located in the four emission peak bands, and at least two of the four red light band chips located in different emission peak bands have a half-wave width greater than or equal to 30nm, so as to meet the corresponding spectral settings based on reasonable selection of the emission peaks of the red light band chips, and help to improve the continuity of the spectrum.

[0019] According to one aspect of the present invention, the present invention provides a lighting fixture involving a red light band, wherein the lighting fixture involving a red light band comprises at least four red light band chips whose emission peak wavelengths are respectively located in a band range of 650nm-680nm, a band range of 680nm-730nm, a band range of 730nm-770nm and a band range of 770nm-810nm, and the half-wave width of the red light chip having at least two emission peak wavelengths located in different band ranges is greater than or equal to 30nm.

[0020] In one embodiment, the emission peak wavelengths of the four red light band chips are respectively selected from the band ranges of 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, and are sequentially named red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4, wherein the half-wave widths of the red light band chip L2 and the red light band chip L3 are greater than or equal to 30nm.

[0021] In one embodiment, the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 45 nm.

[0022] In one embodiment, the peak emission wavelength of the red light band chip L1 is 666 nm, the peak emission wavelength of the red light band chip L2 is 710 nm, the peak emission wavelength of the red light band chip L3 is 755 nm, and the peak emission wavelength of the red light band chip L4 is 783 nm.

[0023] In one embodiment, the half-wave width of the red light band chip L1 is 14 nm, the half-wave width of the red light band chip L2 is 49 nm, the half-wave width of the red light band chip L3 is 51 nm, and the half-wave width of the red light band chip L4 is 19 nm.

[0024] In one embodiment, the peak emission wavelength of the red light band chip L1 is 670 nm, the peak emission wavelength of the red light band chip L2 is 710 nm, the peak emission wavelength of the red light band chip L3 is 755 nm, and the peak emission wavelength of the red light band chip L4 is 783 nm.

[0025] In one embodiment, the half-wave width of the red light band chip L1 is 14 nm, the half-wave width of the red light band chip L2 is 49 nm, the half-wave width of the red light band chip L3 is 71 nm, and the half-wave width of the red light band chip L4 is 19 nm.

[0026] In one embodiment, the lighting fixture involving the red light band includes at least one first band chip, wherein the emission peak wavelength of the first band chip is within the band range of 420nm to 580nm.

[0027] In one embodiment, the lighting fixture involving the red light band includes at least four chips in the first band, and the emission peak wavelengths of the four chips in the first band are in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm.

[0028] In one embodiment, the lighting fixture involving the red light band uses phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm to simultaneously perform wavelength conversion matching on the first band chip.

[0029] In one embodiment, the phosphor is mixed in transparent silica gel or silicone resin, and the ratio of the phosphor with corresponding emission peak wavelength to AB silica gel within an error range of ±15% is A:B:494nm:535nm:495nm:525nm:655nm=0.35:3.5:0.03:0.764:0.03:0.123:0.19, wherein A and B are two-component silica gel or silicone resin.

[0030] According to another aspect of the present invention, the present invention provides a method for emitting light in the red light band, wherein the method for emitting light in the red light band comprises the steps of:

[0031] A. Divide the emission peak wavelengths into four emission peak bands of 650nm to 680nm, 680nm to 730nm, 730nm to 770nm and 770nm to 810nm;

[0032] B. Select at least four red light band chips whose emission peak wavelengths are located in the four emission peak bands, and at least two of the four red light band chips located in different emission peak bands have a half-wave width greater than or equal to 30 nm.

[0033] In one embodiment, the step B selects four red light band chips in the band range of 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, respectively, and they are named red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4 in sequence, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm.

[0034] In one embodiment, the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 45 nm.

[0035] In one embodiment, the peak emission wavelength of the red light band chip L1 selected in step B is 666nm, the peak emission wavelength of the red light band chip L2 is 710nm, the peak emission wavelength of the red light band chip L3 is 755nm, and the peak emission wavelength of the red light band chip L4 is 783nm.

[0036] In one embodiment, the half-wave width of the red light band chip L1 selected in step B is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 51nm, and the half-wave width of the red light band chip L4 is 19nm.

[0037] In one embodiment, the peak emission wavelength of the red light band chip L1 selected in step B is 670nm, the peak emission wavelength of the red light band chip L2 is 710nm, the peak emission wavelength of the red light band chip L3 is 755nm, and the peak emission wavelength of the red light band chip L4 is 783nm.

[0038] In one embodiment, the half-wave width of the red light band chip L1 selected in step B is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 71nm, and the half-wave width of the red light band chip L4 is 19nm.

[0039] In one embodiment, the red light emitting method includes step C, selecting at least one first wavelength chip in the wavelength range of 420nm to 580nm with an emission peak wavelength.

[0040] In one embodiment, the step C selects four first-band chips in the wavelength ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm respectively.

[0041] In one embodiment, the method for emitting light in the red light band includes step D, using phosphors having emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm to simultaneously perform wavelength conversion matching on the first band chip.

[0042] In one embodiment, the phosphor is mixed in transparent silica gel or silicone resin, and the ratio of the phosphor with corresponding emission peak wavelength to AB silica gel within an error range of ±15% is A:B:494nm:535nm:495nm:525nm:655nm=0.35:3.5:0.03:0.764:0.03:0.123:0.19, wherein A and B are two-component silica gel or silicone resin.

[0043] Further objects and advantages of the present invention will be fully apparent from an understanding of the following description and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 This is a comparison chart between the luminous spectrum of an existing high-crystal-ratio LED light source and the sunlight spectrum.

[0045] Figure 2 The spectrum of sunlight with a color temperature of 5600k is in the range of 350nm-810nm.

[0046] Figure 3 FIG. 4 is a schematic diagram of a light emission spectrum of a lighting fixture involving red light according to a first embodiment of the present invention.

[0047] Figure 4 It is a schematic diagram comparing the luminous spectrum of the lighting fixture involving the red light band according to the first embodiment of the present invention and the spectrum of sunlight with a color temperature of 5600K.

[0048] Figure 5 FIG. 4 is a schematic diagram of a light emission spectrum of a lighting fixture involving red light according to a second embodiment of the present invention.

[0049] Figure 6 It is a schematic diagram comparing the luminous spectrum of the lighting fixture involving the red light band according to the second embodiment of the present invention and the spectrum of sunlight with a color temperature of 5600K. DETAILED DESCRIPTION

[0050] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art can think of other obvious variations. The basic principles of the present invention defined in the following description can be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not deviate from the spirit and scope of the present invention.

[0051] Those skilled in the art should understand that, in the disclosure of the present invention, the orientation or position relationship indicated by the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. are based on the orientation or position relationship shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0052] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0053] Referring to the accompanying drawings of the present invention Figures 2 to 6 The present invention provides a lighting fixture involving the red light band, whose luminous spectrum can involve the red light band, complement the lack of the luminous spectrum of existing lamps in the red light band, and highly restore the sunlight spectrum in the red light band, so that the actual luminous effect of the lighting fixture involving the red light band is closer to the effect of sunlight, and can provide artificial lighting comparable to sunlight, reduce the health problems caused by the reduction of outdoor activities of people in modern society and the lack of sunlight exposure, so as to provide healthy lighting.

[0054] Specifically, the present invention selects four emission peak bands within the band range of 650nm to 810nm with the wavelength of the absorption peak as the boundary, and selects red light band chips with at least four emission peak wavelengths respectively within the four emission peak bands, so that the spectrum of sunlight can be close to that within the band range of 650nm to 810nm, thereby complementing the lack of the existing lamps' luminous spectrum in the red light band and providing healthy lighting.

[0055] In detail, the present invention selects four emission peak bands in the band range of 650nm to 810nm of the sunlight spectrum with the wavelength of the absorption peak as the boundary, namely, an emission peak band with a starting wavelength of 650nm and an ending wavelength of 680nm, an emission peak band with a starting wavelength of 680nm and an ending wavelength of 730nm, an emission peak band with a starting wavelength of 730nm and an ending wavelength of 770nm, and an emission peak band with a starting wavelength of 770nm and an ending wavelength of 810nm, and selects the red light band chips whose four emission peak wavelengths are respectively in the above four emission peak bands. That is to say, the lighting fixture involving the red light band has at least one red light band chip in the above four emission peak bands, so as to meet the corresponding spectrum setting based on the reasonable selection of the emission peak of the red light band chip, thereby better restoring the spectrum of sunlight in the red light band. It is understandable that the lighting fixture involving the red light band may also have multiple red light band chips whose emission peak wavelengths are located in the same emission peak band, but each of the above-mentioned emission peak bands has at least one red light band chip whose emission peak wavelength is located therein.

[0056] Furthermore, the present invention selects the red light band chip with the corresponding emission peak wavelength based on the peak of each emission peak band, wherein the emission peak wavelengths of the four red light band chips are respectively selected from 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, and are sequentially named red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4, that is, the red light band chips with emission peak wavelengths of 666nm±5nm are respectively named The chip is a red light band chip L1, the red light band chip with an emission peak wavelength of 710nm±5nm is a red light band chip L2, the red light band chip with an emission peak wavelength of 753nm±5nm is a red light band chip L3, and the red light band chip with an emission peak wavelength of 786nm±5nm is a red light band chip L4, so that the emission peak of the spectrum of the lighting fixture involving the red light band in the red light band can be close to the peak of the sunlight spectrum in the red light band, thereby better restoring the spectrum of sunlight in the red light band.

[0057] It is worth mentioning that the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm, so as to ensure the spectral continuity of the lighting fixtures involving the red light band in the red light band, effectively reduce the gaps and peaks in the spectrum, and thus better restore the corresponding sunlight spectrum in the red light band.

[0058] Preferably, the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 45nm, thereby improving the continuity between the emission peaks formed by the red light band chip L1, the red light band chip L2, the red light band chip L3 and the red light band chip L4, avoiding gaps in the light emission spectrum of the lighting fixture involving the red light band in the red light band, and improving the degree of restoration of the sunlight spectrum in the red light band by the lighting fixture involving the red light band.

[0059] In particular, the present invention also selects a first band chip whose emission peak wavelength is in the visible light band, wherein the emission peak wavelength of the first band chip is in the band range of 420nm to 580nm, so as to meet the coverage of the lighting fixture involving the red light band in the visible light band and ensure the lighting effect of the lighting fixture involving the red light band.

[0060] For details, refer to Figure 3 and Figure 4 , the luminous spectrum of the lighting fixture involving the red light band corresponding to a first embodiment of the present invention, and the comparison with the sunlight spectrum of 5600k color temperature are respectively illustrated. Specifically, in the first embodiment of the present invention, the emission peak wavelength of the red light band chip L1 selected is 666nm, the emission peak wavelength of the red light band chip L2 is 710nm, the emission peak wavelength of the red light band chip L3 is 755nm, and the emission peak wavelength of the red light band chip L4 is 783nm.

[0061] Specifically, in the first embodiment of the present invention, the half-wave width of the red light band chip L1 is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 51nm, and the half-wave width of the red light band chip L4 is 19nm, thereby improving the continuity between the emission peaks of the two adjacent red light band chips in the emission peak band where the emission peak wavelength is located, avoiding the emission spectrum of the lighting fixture involving the red light band from having a gap in the red light band, and providing the degree of restoration of the sunlight spectrum in the red light band by the lighting fixture involving the red light band. It can be understood that the half-wave width of each red light band chip is allowed to have a reasonable fluctuation range of ±5nm.

[0062] It is worth mentioning that in the first embodiment of the present invention, the emission peak wavelength of the first band chip is selected from 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm to match the peak distribution of the sunlight spectrum in the visible light band, thereby ensuring the lighting effect of the lighting fixture involving the red light band.

[0063] Specifically, the lighting fixture involving the red light band includes at least four chips of the first waveband, and the emission peak wavelengths of the four chips of the first waveband are in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm. That is to say, the lighting fixture involving the red light band has four chips of the first waveband whose emission peak wavelengths are respectively in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, so that the light-emitting spectrum of the lighting fixture involving the red light band can be close to the sunlight spectrum, so as to better restore the corresponding sunlight spectrum.

[0064] It is worth mentioning that the half-wave width of at least one of the first-band chips is greater than or equal to 17nm, so as to improve the continuity of the spectrum and enhance the matching degree between the lighting fixtures involving the red light band and the sunlight spectrum based on the wide half-wave setting of at least one of the first-band chips.

[0065] In particular, in order to optimize the matching of the luminous spectrum of the lighting fixture involving the red light band with the sunlight spectrum, the present invention also performs wavelength conversion matching on the first band chip by using the transparent silica gel or silicone resin and phosphor ratio shown in the following table:

[0066]

[0067] Among them, the emission peak wavelength of the phosphor in the above table is allowed to have a fluctuation range of ±5nm, and the corresponding phosphor ratio is allowed to have a fluctuation range of ±15% based on the numerical values ​​​​in the above table, and the present invention is not limited to this. That is to say, in this embodiment of the present invention, the phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm are further used to simultaneously perform wavelength conversion matching on the first band chip. Among them, A and B are two-component silicone or silicone resin.

[0068] It is worth mentioning that in the first embodiment of the present invention, the radiation power of the lighting fixture involving the red light band is about 2000mW. After the selection of the above-mentioned red light band chip and the first band chip, after simulation calculation and actual measurement optimization, the partial radiation power of the first band chip accounts for 1600mW to 1800mW, the radiation power of the red light band chip L1 is about 11.5mW, the radiation power of the red light band chip L2 is about 150mW, the radiation power of the red light band chip L3 is about 165mW, the radiation power of the red light band chip L4 is about 55mW, and the total radiation flux is 2081.5mW.

[0069] refer to Figure 3 and Figure 4 It can be known that the luminous spectrum of the lighting fixture involving the red light band in this embodiment of the present invention can present the distribution composition law of the corresponding peak of the sunlight spectrum with a color temperature of 5600k, which makes up for the lack of existing lamps in the red light band, so that the luminous spectrum of the lighting fixture involving the red light band can better restore the corresponding sunlight spectrum, reduce the health problems caused by the reduction of outdoor activities of people in modern society and the lack of sunlight exposure, and provide healthy lighting.

[0070] Further, refer to Figure 5 and Figure 6 , the luminous spectrum of the lighting fixture involving the red light band corresponding to a second embodiment of the present invention, and the comparison with the sunlight spectrum of 5600k color temperature are respectively illustrated. Specifically, in the second embodiment of the present invention, the emission peak wavelength of the red light band chip L1 selected is 670nm, the emission peak wavelength of the red light band chip L2 is 710nm, the emission peak wavelength of the red light band chip L3 is 755nm, and the emission peak wavelength of the red light band chip L4 is 783nm.

[0071] Specifically in this embodiment, the half-wave width of the red light band chip L1 is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 71nm, and the half-wave width of the red light band chip L4 is 19nm, thereby improving the continuity between the emission peaks of the two adjacent red light band chips in the emission peak band where the emission peak wavelength is located, avoiding the emission spectrum of the lighting fixture involving the red light band from having a gap in the red light band, and providing the degree of restoration of the sunlight spectrum in the red light band by the lighting fixture involving the red light band. It can be understood that the half-wave width of each red light band chip is allowed to have a reasonable fluctuation range of ±5nm.

[0072] It is worth mentioning that in the second embodiment of the present invention, the lighting fixture involving the red light band also matches the peak distribution of the sunlight spectrum in the visible light band with at least four first-band chips whose emission peak wavelengths are respectively in the band ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm. That is to say, the lighting fixture involving the red light band has four first-band chips whose emission peak wavelengths are respectively in the band ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, so that the luminous spectrum of the lighting fixture involving the red light band can be close to the sunlight spectrum, so as to better restore the corresponding sunlight spectrum.

[0073] In particular, the half-wave width of at least one of the first-waveband chips is greater than or equal to 17nm, so as to improve the continuity of the spectrum and enhance the matching degree between the lighting fixtures involving the red light band and the sunlight spectrum based on the wide half-wave setting of at least one of the first-waveband chips.

[0074] Similarly, in order to optimize the matching of the luminous spectrum of the lighting fixture involving the red light band with the sunlight spectrum, the present invention also performs wavelength conversion matching on the first band chip by using the transparent silica gel or silicone resin and phosphor ratio shown in the following table:

[0075]

[0076] Among them, the emission peak wavelength of the phosphor in the above table is allowed to have a fluctuation range of ±5nm, and the corresponding phosphor ratio is allowed to have a fluctuation range of ±15% based on the numerical values ​​​​in the above table, and the present invention is not limited to this. That is to say, in this embodiment of the present invention, the phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm are further used to simultaneously perform wavelength conversion matching on the first band chip. Among them, A and B are two-component silicone or silicone resin.

[0077] It is worth mentioning that in the second embodiment of the present invention, the radiation power of the lighting fixture involving the red light band is about 2000mW. After the selection of the red light band chip and the first band chip in the above-mentioned second embodiment, after simulation calculation and actual measurement optimization, the partial radiation power of the first band chip accounts for 1600mW to 1800mW, the radiation power of the red light band chip L1 is about 16mW, the radiation power of the red light band chip L2 is about 150mW, the radiation power of the red light band chip L3 is about 220mW, the radiation power of the red light band chip L4 is about 38mW, and the total radiation light flux is 2124mW.

[0078] refer to Figure 5 and Figure 6 It can be seen that the luminous spectrum of the lighting fixture involving the red light band of the second embodiment can present the distribution composition law of the corresponding peak of the sunlight spectrum with a color temperature of 5600k, which makes up for the lack of existing lamps in the red light band, so that the luminous spectrum of the lighting fixture involving the red light band can better restore the corresponding sunlight spectrum, reduce the health problems caused by the reduction of outdoor activities of people in modern society and the lack of sunlight exposure, and provide healthy lighting.

[0079] To further understand the present invention, the present invention also provides a method for emitting light in the red light band, wherein the method for emitting light in the red light band comprises the steps of:

[0080] A. Divide the emission peak wavelengths into four emission peak bands of 650nm to 680nm, 680nm to 730nm, 730nm to 770nm and 770nm to 810nm;

[0081] B. Select at least four red light band chips whose emission peak wavelengths are located in the four emission peak bands, and at least two of the four red light band chips located in different emission peak bands have a half-wave width greater than or equal to 30 nm.

[0082] It is worth mentioning that the light-emitting method involving the red light band includes step C, selecting at least one first band chip in the band range of 420nm to 580nm with an emission peak wavelength to match the peak distribution of the sunlight spectrum in the visible light band, thereby ensuring the lighting effect of the lighting fixture involving the red light band.

[0083] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0084] It should be understood by those skilled in the art that the embodiments of the present invention described above and shown in the accompanying drawings are only examples and do not limit the present invention. The purpose of the present invention has been fully and effectively achieved. The functional and structural principles of the present invention have been demonstrated and explained in the embodiments, and the embodiments of the present invention may be deformed or modified in any way without departing from the principles.

Claims

1. A lighting fixture involving red light band, characterized in that: include: The lighting fixture involving the red light band includes at least four red light band chips whose emission peak wavelengths are respectively located in the band range of 650nm-680nm, the band range of 680nm-730nm, the band range of 730nm-770nm and the band range of 770nm-810nm, and the half-wave width of the red light chip with at least two emission peak wavelengths located in different band ranges is greater than or equal to 30nm.

2. According to claim 1, the lighting fixture involving the red light band, wherein the emission peak wavelengths of the four red light band chips are respectively selected from the band ranges of 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, and are named red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4 respectively, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm.

3. The lighting fixture involving the red light band according to claim 2, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 45 nm.

4. According to the lighting fixture involving the red light band according to claim 3, the peak emission wavelength of the red light band chip L1 is 666nm, the peak emission wavelength of the red light band chip L2 is 710nm, the peak emission wavelength of the red light band chip L3 is 755nm, and the peak emission wavelength of the red light band chip L4 is 783nm.

5. According to the lighting fixture involving the red light band according to claim 4, the half-wave width of the red light band chip L1 is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 51nm, and the half-wave width of the red light band chip L4 is 19nm.

6. According to the lighting fixture involving the red light band according to claim 3, the peak emission wavelength of the red light band chip L1 is 670nm, the peak emission wavelength of the red light band chip L2 is 710nm, the peak emission wavelength of the red light band chip L3 is 755nm, and the peak emission wavelength of the red light band chip L4 is 783nm.

7. The lighting fixture involving the red light band according to claim 6, wherein the half-wave width of the red light band chip L1 is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 71nm, and the half-wave width of the red light band chip L4 is 19nm.

8. The lighting fixture involving the red light band according to any one of claims 1 to 7, wherein the lighting fixture involving the red light band comprises at least one first waveband chip, wherein the emission peak wavelength of the first waveband chip is within the waveband range of 420nm to 580nm.

9. The lighting fixture involving the red light band according to claim 8, wherein the lighting fixture involving the red light band comprises at least four chips of the first waveband, and the emission peak wavelengths of the four chips of the first waveband are in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm.

10. The lighting fixture involving the red light band according to claim 9, wherein the lighting fixture involving the red light band uses phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm respectively to perform wavelength conversion matching on the first band chip.

11. According to claim 10, the lighting fixture involving the red light band, wherein the fluorescent powder is mixed in transparent silicone or silicone resin, and the ratio of the fluorescent powder with corresponding emission peak wavelength to AB silicone within the error range of ±15% is A:B:494nm:535nm:495nm:525nm:655nm=0.35:3.5:0.03:0.764:0.03:0.123:0.19, wherein A and B are two-component silicone or silicone resin.

12. A method for emitting light in the red light band, characterized in that: step: A. Divide the emission peak wavelengths into four emission peak bands of 650nm to 680nm, 680nm to 730nm, 730nm to 770nm and 770nm to 810nm; B. Select at least four red light band chips whose emission peak wavelengths are located in the four emission peak bands, and at least two of the four red light band chips located in different emission peak bands have a half-wave width greater than or equal to 30 nm.

13. According to the red light band luminescence method described in claim 12, wherein the step B selects four red light band chips in the band range of 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, respectively, and they are named red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4 in sequence, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm.

14. The light-emitting method involving the red light band according to claim 13, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 45 nm.

15. According to the red light band luminescence method described in claim 14, the peak emission wavelength of the red light band chip L1 selected in step B is 666nm, the peak emission wavelength of the red light band chip L2 is 710nm, the peak emission wavelength of the red light band chip L3 is 755nm, and the peak emission wavelength of the red light band chip L4 is 783nm.

16. According to the light-emitting method involving the red light band according to claim 15, the half-wave width of the red light band chip L1 selected in step B is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 51nm, and the half-wave width of the red light band chip L4 is 19nm.

17. According to the red light band luminescence method described in claim 14, the peak emission wavelength of the red light band chip L1 selected in step B is 670nm, the peak emission wavelength of the red light band chip L2 is 710nm, the peak emission wavelength of the red light band chip L3 is 755nm, and the peak emission wavelength of the red light band chip L4 is 783nm.

18. According to the light-emitting method involving the red light band according to claim 17, wherein the half-wave width of the red light band chip L1 selected in step B is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 71nm, and the half-wave width of the red light band chip L4 is 19nm.

19. The method for emitting light in the red light band according to any one of claims 12 to 18, wherein the method for emitting light in the red light band comprises step C, selecting at least one first band chip in the band range of 420nm to 580nm with an emission peak wavelength.

20. The red light emitting method according to claim 19, wherein the step C selects at least one of the first wavelength chips in the wavelength ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm respectively.

21. The method for emitting light in the red light band according to claim 20, wherein the method for emitting light in the red light band comprises step D, wherein phosphors having emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm are used to simultaneously perform wavelength conversion matching on the first band chip.

22. According to claim 21, the luminescence method involving the red light band, wherein the phosphor is mixed in transparent silica gel or silicone resin, and the ratio of the phosphor with corresponding emission peak wavelength to AB silica gel within the error range of ±15% is A:B:494nm:535nm:495nm:525nm:655nm=0.35:3.5:0.03:0.764:0.03:0.123:0.19, wherein A and B are two-component silica gel or silicone resin.

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