A method for processing memory bar initialization failure

Abstract

This invention relates to the field of electronic digital data processing technology, specifically a method for handling memory module initialization failure. The method includes: determining whether the memory module has failed to read data; if an error memory signal is detected, it indicates that the memory module has failed to read data, and the memory module is marked as a memory module to be tested; collecting the operating status data of the memory module under test, including memory module performance data and aging status data, and comprehensively analyzing the data to obtain a memory module performance evaluation index and a memory module aging degree evaluation index; comprehensively analyzing the data to obtain a memory module anomaly evaluation index; determining whether the memory module has malfunctioned based on the memory module anomaly evaluation index; and processing the memory module according to the determination result. This invention, by providing a method for handling memory module initialization failure, helps prevent data loss, ensures data security, and improves system stability and performance optimization, thereby reducing user dissatisfaction and inconvenience caused by system problems and increasing user satisfaction.

Description

Technical Field

[0001] The invention relates to the technical field of electronic digital data processing, in particular to a method for processing memory bar initialization failure. Background Art

[0002] As an important storage component in the computer, the memory module is responsible for temporarily storing the operating system, applications and their running data. Failure in initialization may cause the system to fail to start or run normally, affecting user experience and data processing efficiency.

[0003] For example, the invention patent with announcement number: CN106055438B discloses a method and system for quickly locating abnormalities of memory bars on a motherboard. The method for quickly locating abnormalities of memory bars on a motherboard includes the following steps: step S1, starting the basic input and output system, and initializing the general input and output interface connected to the memory bar slot; step S2, initializing the memory bar, and reading the configuration information data of the memory bar one by one, and detecting the status of the memory bar in the memory bar slot; step S3, judging whether the status of the memory bar is normal, and sending feedback information until the memory bars in all the memory bar slots are detected; step S4, sending the status of the memory bars in all the memory bar slots to the baseboard management controller.

[0004] For example, the invention patent with announcement number: CN107066362B discloses a method for automatically handling faulty memory sticks, in which an LED indicator light is set corresponding to each DIMM slot, the negative pole of each LED indicator light is grounded, and the positive pole of each LED indicator light is connected to the CPLD, and the system south bridge PCH is connected to the CPLD through GPIO; during the system startup process, the CPLD controls the indicator light status of the DIMM slot, performs in-situ detection on the memory, initializes the memory stick, and if problems such as memory stick failure or unsupported memory stick type are found, the software program will disable the faulty memory stick, indicate the corresponding faulty memory stick through the set indicator light, and the program will initialize the next memory stick until all memory sticks are initialized and the system is started.

[0005] However, in the process of implementing the technical solution of the invention in the embodiments of the present application, it was found that the above technology has at least the following technical problems: the current method for handling memory stick initialization failure generally realizes the rapid positioning and intuitive display of memory stick abnormalities through an integrated hardware and software collaboration mechanism, but the automated detection is not absolutely accurate, and there are often false alarms or missed alarms in specific compatibility issues or intermittent failures, which easily leads to the risk of misjudging faulty memory. Summary of the invention

[0006] In view of the deficiencies in the prior art, the present invention provides a satisfaction evaluation method and system based on network data crawling, which can effectively solve the problems involved in the above-mentioned background technology.

[0007] To achieve the above objectives, the present invention is implemented through the following technical solutions: The first aspect of the present invention provides a satisfaction evaluation method based on network data capture, including: judging whether the memory stick fails to read, if an error memory signal is detected, it indicates that the memory stick fails to read, and marking the memory stick as a memory stick to be tested.

[0008] Collect the running status data of the memory bar to be tested, including the memory bar performance data and aging status data, conduct a comprehensive analysis on the memory bar performance data to obtain the memory bar performance evaluation index, and conduct a comprehensive analysis on the memory bar aging status data to obtain the memory bar aging degree evaluation index.

[0009] According to the memory bar performance evaluation index and the aging degree evaluation index, a comprehensive analysis is performed to obtain a memory bar abnormality evaluation index, and according to the memory bar abnormality evaluation index, it is determined whether the memory bar fails, a judgment result is obtained, and the memory bar is processed according to the judgment result.

[0010] As a further method, the specific process of determining whether a memory stick fails to be read is as follows: using a memory detection tool to detect memory, recording data and collecting system log data, aggregating the detected data into a memory stick database, and determining whether the memory stick fails to be read based on the data in the memory stick database. If an error memory signal is detected, it indicates that the memory stick fails to be read, and the memory stick is marked as a memory stick to be tested.

[0011] As a further method, the error memory signal includes the POST beep and screen display error information during the power-on self-test phase, the system log and blue screen error code during the operating system loading phase, and the error information detected by the memory detection tool.

[0012] As a further method, the memory stick performance data is comprehensively analyzed to obtain a memory stick performance evaluation index. The specific analysis process is: deploying a number of time monitoring points, collecting memory stick performance data at each time monitoring point, including the memory stick operating frequency, memory stick CAS delay duration and memory stick storage speed at each time monitoring point within the operation cycle, extracting the reference standard operating frequency, allowable deviation operating frequency, critical CAS delay duration and critical storage speed from the memory stick database, and comprehensively analyzing to obtain the memory stick performance evaluation index.

[0013] As a further method, the memory stick aging status data is comprehensively analyzed to obtain a memory stick aging degree evaluation index. The specific analysis process is as follows: the memory stick aging status data includes the memory stick operating voltage, memory stick temperature and memory stick error rate at each time monitoring point in the operation cycle. The reference standard operating voltage, reference standard temperature, allowable deviation operating voltage, allowable deviation temperature and critical error rate are extracted from the memory stick database, and the memory stick aging degree evaluation index is obtained through comprehensive analysis.

[0014] As a further method, the comprehensive analysis obtains a memory bar abnormality evaluation index, and the specific analysis process is: based on the memory bar performance evaluation index and the aging degree evaluation index, a comprehensive analysis is performed to obtain a memory bar abnormality evaluation index, and the memory bar abnormality evaluation index is used to quantitatively evaluate the degree of abnormality of the memory bar.

[0015] As a further method, the method of judging whether a memory stick fails according to a memory stick abnormality assessment indicator comprises the following specific processes: extracting a memory stick abnormality assessment indicator threshold from a memory stick database according to the memory stick abnormality assessment indicator, comparing the memory stick abnormality assessment indicator with the memory stick abnormality assessment indicator threshold, and judging that the memory stick is normal if the memory stick abnormality assessment indicator is lower than the memory stick abnormality assessment indicator threshold; and judging that the memory stick is faulty if the memory stick abnormality assessment indicator is higher than or equal to the memory stick abnormality assessment indicator threshold.

[0016] As a further method, the memory stick is processed according to the judgment result, and the specific process is: when the judgment result is that the memory stick is normal, the memory stick is re-inserted and unplugged, and the system configuration and hardware devices are checked for abnormalities;

[0017] When the result of the judgment is that the memory module is faulty, the faulty memory module is isolated, the system is restarted, and then the remaining memory modules are tested.

[0018] As a further method, the memory bar performance evaluation index is specifically expressed as:

[0019] ;

[0020] In the formula, represents the memory bar performance evaluation index, e represents the natural constant, n represents the number of each time monitoring point, , m represents the total number of time monitoring points, Indicates the memory bank operating frequency at the nth time monitoring point. Indicates the CAS latency of the memory bar at the nth time monitoring point. Indicates the memory bar storage speed at the nth time monitoring point, Indicates the reference standard operating frequency, Indicates the allowable deviation working frequency, Indicates the critical CAS delay duration, represents the critical storage speed, Indicates the performance evaluation impact factor corresponding to the set operating frequency, Indicates the performance evaluation impact factor corresponding to the set CAS delay duration. Indicates the performance evaluation impact factor corresponding to the set storage speed.

[0021] As a further method, the memory bar abnormality evaluation index, the specific numerical expression is:

[0022] ;

[0023] In the formula, Indicates the memory bar abnormality evaluation index. Indicates the memory bar performance evaluation index. Indicates the memory module aging evaluation index. Indicates the abnormal evaluation impact factor corresponding to the set memory bar performance evaluation index. Indicates the abnormal assessment impact factor corresponding to the set memory bar aging assessment index.

[0024] Compared with the prior art, the embodiments of the present invention have at least the following advantages or beneficial effects:

[0025] (1) The present invention provides a method for processing memory stick initialization failure, determines whether a memory stick fails according to the abnormality of the memory stick, and processes the failed memory stick, thereby improving the accuracy of memory stick failure judgment and reducing the risk of misjudgment. It can avoid hardware replacement and related maintenance costs caused by failure, prevent data loss, ensure data security, and help improve system stability and performance optimization.

[0026] (2) The present invention helps to detect memory module faults and optimize them by evaluating the performance of the memory module. By understanding the actual performance and bottlenecks of the memory module, the memory configuration can be adjusted to improve the overall system performance. At the same time, it can ensure that the memory module operates within the specification range, maintain system stability, and avoid system restart or data loss due to memory errors.

[0027] (3) By evaluating the aging degree of the memory stick, the present invention can identify components that are about to fail, thereby avoiding unexpected system crashes, reducing downtime, and improving system availability and reliability. By evaluating the status of the memory stick, it helps to ensure that the memory stick is in good condition, which can avoid delays or system freezes caused by memory failures, thereby providing a better user experience. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The present invention is further described using the accompanying drawings, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention. A person skilled in the art can obtain other drawings based on the following drawings without creative work.

[0029] Figure 1 It is a schematic diagram of the method flow of the present invention.

[0030] Figure 2 The figure is a schematic diagram of the functional relationship between the memory bar performance evaluation index and the memory bar abnormality evaluation index involved in the embodiment of the present invention.

[0031] Figure 3 The present invention is a flowchart of processing a memory bar. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0033] Reference Figure 1 As shown, the present invention provides a method for processing memory bar initialization failure, including: determining whether the memory bar fails to be read, if an error memory signal is detected, it indicates that the memory bar fails to be read, and marking the memory bar as a memory bar to be tested.

[0034] Specifically, determine whether the memory stick fails to read. The specific process is: use a memory detection tool to detect the memory, record data and collect system log data, collect the detected data into a memory stick database, and determine whether the memory stick fails to read based on the data in the memory stick database. If an error memory signal is detected, it indicates that the memory stick fails to read, and the memory stick is marked as a memory stick to be tested.

[0035] It should be explained that the error memory signal in this embodiment includes the POST beep and screen error message during the power-on self-test phase, the system log and blue screen error code during the operating system loading phase, and the error message detected by the memory detection tool.

[0036] It should be explained that the POST beep refers to the fact that some motherboards emit a specific beep sequence as an error code during the power-on self-test process if a memory error is detected. These codes can help locate the problem. The screen displays an error message, which means that during the power-on self-test process, if the memory test fails, the screen may display an error message, such as "MemoryTest Fail" or a specific error code. The system log refers to the Windows system event viewer or the Linux dmesg command, which can display detailed information on memory initialization and detection, including the identification, size, speed, type of memory modules, and whether an error is detected. Blue screen error code: If a memory read failure causes the system to crash, a blue screen of death may occur, and an error code, such as 0x0000007A, 0x0000008E, etc., may be displayed. The memory detection tools include MemTest86 and the Windows Memory Diagnostic Tool. MemTest86 is a commonly used memory detection tool that can be run independently before the system starts and provides a detailed memory error report, including the error location, type, and severity. The Windows Memory Diagnostic Tool is a memory detection tool that comes with Windows and can run automatically after restarting to detect and report memory errors.

[0037] Collect the running status data of the memory bar to be tested, including the memory bar performance data and aging status data, conduct a comprehensive analysis on the memory bar performance data to obtain the memory bar performance evaluation index, and conduct a comprehensive analysis on the memory bar aging status data to obtain the memory bar aging degree evaluation index.

[0038] Specifically, a comprehensive analysis is performed on the memory stick performance data to obtain a memory stick performance evaluation index. The specific analysis process is: deploy a number of time monitoring points, collect the memory stick performance data at each time monitoring point, including the memory stick operating frequency, memory stick CAS delay duration and memory stick storage speed at each time monitoring point within the operation cycle, extract the reference standard operating frequency, allowable deviation operating frequency, critical CAS delay duration and critical storage speed from the memory stick database, and conduct a comprehensive analysis to obtain the memory stick performance evaluation index.

[0039] It should be explained that the memory stick performance evaluation index is a quantitative evaluation data obtained by comprehensively analyzing the memory stick operating frequency, memory stick CAS latency duration and memory stick storage speed at each time monitoring point within the operation cycle. It is used to quantitatively evaluate the performance of the memory stick and provide a basis for evaluating the degree of abnormality of the memory stick.

[0040] In a specific embodiment, the numerical expression of the memory bar performance evaluation index is:

[0041] ;

[0042] In the formula, represents the memory bar performance evaluation index, e represents the natural constant, n represents the number of each time monitoring point, , m represents the total number of time monitoring points, Indicates the memory bank operating frequency at the nth time monitoring point. Indicates the CAS latency of the memory bar at the nth time monitoring point. Indicates the memory bar storage speed at the nth time monitoring point, Indicates the reference standard operating frequency, Indicates the allowable deviation working frequency, Indicates the critical CAS delay duration, represents the critical storage speed, Indicates the performance evaluation impact factor corresponding to the set operating frequency, Indicates the performance evaluation impact factor corresponding to the set CAS delay duration. Indicates the performance evaluation impact factor corresponding to the set storage speed.

[0043] It should be explained that, in this embodiment, the value range of the performance evaluation influencing factor corresponding to the working frequency, the performance evaluation influencing factor corresponding to the CAS delay duration, and the performance evaluation influencing factor corresponding to the storage speed is [0, 1]. Through the relationship between the working frequency, CAS delay duration, storage speed and the memory stick performance evaluation index in the historical data, a mapping set of the working frequency, CAS delay duration, storage speed and their corresponding performance evaluation influencing factors is established. The real-time working frequency, CAS delay duration and storage speed are input to obtain the performance evaluation influencing factor corresponding to the working frequency, the performance evaluation influencing factor corresponding to the CAS delay duration and the performance evaluation influencing factor corresponding to the storage speed from the mapping set. The influencing factors are all extracted from the memory stick database.

[0044] It needs to be explained that, from the above formula, when the values ​​of other parameters remain unchanged, the smaller the difference between the operating frequency of the memory stick and the operating frequency of the reference standard, the larger the memory stick performance evaluation index, indicating that the performance of the memory stick is better; the shorter the CAS delay time of the memory stick, the better the performance of the memory stick; the smaller the storage speed of the memory stick, the better the performance of the memory stick; and the three are in inverse proportional relationship.

[0045] It should be explained that the operating frequency in this embodiment refers to the data transmission rate of the memory stick, and the unit is megahertz (MHz). A higher frequency means a faster data transmission speed. The storage speed represents the data access time, which refers to the shortest time required between two independent access operations, in nanoseconds (ns). The smaller the value, the faster the access speed. CAS (Column Address Strobe) delay, that is, column address signal delay, is a key parameter to describe the performance of dynamic random access memory. CAS delay refers to the time interval from the memory controller sending the column address signal to the memory to the actual data starting to be read or written from the memory, usually expressed in the number of clock cycles.

[0046] It should be understood that the higher the frequency, the more data the memory stick can transfer in each clock cycle, thereby increasing the data transfer speed. For example, a 1600MHz DDR3 memory can transfer more data in the same amount of time compared to a 2400MHz DDR4 memory, even if other conditions are the same. CAS latency is one of the timing parameters, which is closely related to the response time of the memory. Lower CAS latency means that the memory can respond to read and write commands faster, thereby reducing waiting time and increasing storage speed. Even if two memory sticks have the same operating frequency, the one with lower CAS latency will have a faster response speed. Similarly, even if the CAS latency is the same, the memory stick with a higher frequency will provide faster data transfer speeds. The best memory performance is usually to find a balance between high frequency and low CAS latency, because both parameters have a significant impact on storage speed.

[0047] It is important to explain that when a system has a performance problem, performance evaluation can help determine whether the problem originates from the memory module. By comparing the baseline performance and the current performance, it is possible to determine whether the memory module is a performance bottleneck, thereby eliminating or confirming that the memory module is the source of the fault. Performance evaluation is not limited to fault detection, but can also be used for tuning. By understanding the actual performance and bottlenecks of the memory module, system administrators can adjust the memory configuration, such as optimizing cache policies, adjusting virtual memory settings, or changing memory management algorithms, to improve the overall performance of the system. At the same time, the performance of the memory module directly affects the stability of the system. Through performance evaluation, it is possible to ensure that the memory module is operating within the specification range to avoid system restarts or data loss due to memory errors.

[0048] Furthermore, a comprehensive analysis is performed on the memory stick aging status data to obtain a memory stick aging degree evaluation index. The specific analysis process is as follows: the memory stick aging status data, including the memory stick operating voltage, memory stick temperature and memory stick error rate at each time monitoring point in the operation cycle, is extracted from the memory stick database to obtain the reference standard operating voltage, reference standard temperature, allowable deviation operating voltage, allowable deviation temperature and critical error rate, and a comprehensive analysis is performed to obtain the memory stick aging degree evaluation index.

[0049] It needs to be explained that the memory stick aging assessment index is a quantitative assessment data obtained through a comprehensive analysis of the memory stick's operating voltage, memory stick temperature and memory stick error rate at each time monitoring point during the operation cycle. It is used to quantitatively assess the aging degree of the memory stick and provide a basis for assessing the abnormality of the memory stick.

[0050] In a specific embodiment, the numerical expression of the memory bar aging degree evaluation index is:

[0051] ;

[0052] In the formula, Indicates the memory module aging evaluation index. Indicates the memory module operating voltage at the nth time monitoring point, Indicates the memory module temperature at the nth time monitoring point. Indicates the memory bar error rate at the nth time monitoring point, Indicates reference standard working voltage, Indicates the reference standard temperature, Indicates the allowable deviation working voltage, Indicates the allowable deviation temperature, represents the critical error rate, Indicates the aging assessment impact factor corresponding to the set working voltage, Indicates the aging assessment impact factor corresponding to the set temperature. Indicates the aging assessment impact factor corresponding to the set error rate.

[0053] Table 1 Example of memory module aging evaluation index data

[0054]

[0055] It should be explained that, in this embodiment, the reference standard operating voltage is set to 3.3 volts, the reference standard temperature is set to 37 degrees Celsius, the allowable deviation operating voltage is set to 0.1 volts, the allowable deviation temperature is set to 0.1 degrees Celsius, and the critical error rate is set to 0.01. For the sake of convenience in calculation, the aging degree assessment impact factor corresponding to the operating voltage is set to 0.3, the aging degree assessment impact factor corresponding to the temperature is set to 0.2, and the aging degree assessment impact factor corresponding to the error rate is set to 0.5. The impact factors are all extracted from the memory bar database.

[0056] It should be explained that in order to simplify the calculation, the above table sets the time monitoring points to 10, and the memory stick aging degree assessment index at each time monitoring point has the same value. It can be obtained from Table 1 that when the values ​​of other parameters remain unchanged, the greater the difference between the working voltage of the memory stick and the reference standard voltage, the higher the memory stick aging degree assessment index; the greater the difference between the temperature of the memory stick and the reference standard temperature, the higher the memory stick aging degree assessment index; the higher the error rate of the memory stick, the higher the memory stick aging degree assessment index, and the three are in direct proportional relationship.

[0057] It needs to be explained that, in this embodiment, the value range of the aging assessment influence factor corresponding to the working voltage, the aging assessment influence factor corresponding to the temperature, and the aging assessment influence factor corresponding to the error rate is [0, 1]. Through the relationship between the working voltage, temperature and error rate and the memory stick aging assessment index in the historical data, a mapping set of the working voltage, temperature and error rate and their corresponding aging assessment influence factors is established. The real-time working voltage, temperature and error rate are input to obtain the aging assessment influence factor corresponding to the working voltage corresponding to the temperature, the aging assessment influence factor corresponding to the temperature, and the aging assessment influence factor corresponding to the error rate from the mapping set.

[0058] It should be explained that the memory stick operating voltage in this embodiment refers to the actual voltage of the memory stick during operation. Voltage fluctuations may affect the stability and life of the memory stick. Higher voltages may cause more heat to be generated, thereby accelerating the aging of components. The temperature of the memory stick is an important indicator for measuring the thermal condition of the memory stick. Excessively high temperatures will accelerate the chemical reaction rate of the memory stick, leading to faster aging. Even within a range of 0.1 degrees Celsius, changes in temperature can have a significant impact on aging because the temperature effect is nonlinear, especially for semiconductor materials. The memory stick error rate is the probability of errors occurring in the read and write operations of the memory stick. As the memory stick ages, tiny defects may appear in its internal structure, increasing the possibility of data reading or writing failures.

[0059] It should be understood that when the operating voltage of a memory stick increases, it generates more heat, which causes the temperature to rise. Operating at high voltage for a long time will accelerate the aging of memory chips, because higher voltages and the resulting higher temperatures promote chemical reactions and physical changes in internal materials, such as metal oxidation, dielectric degradation, etc. High temperatures, in turn, will affect the voltage stability of the memory stick. At extreme temperatures, memory chips may not work correctly at standard voltages, and the voltage needs to be adjusted to remain stable, but this may further increase the temperature. Excessive temperatures increase the incidence of memory errors. High temperatures reduce the stability of memory cells, making data storage unreliable, resulting in bit flips or data corruption. Server-grade memory is designed with error correction functions, but even this type of memory may exceed its correction capabilities when the temperature is too high, resulting in an increase in error rates. The increase in error rate may in turn require the system to reduce the operating speed or voltage of the memory to reduce errors, but this will increase the temperature, forming a vicious cycle. Although high voltage can improve the performance of memory and allow it to run at higher frequencies, it also increases the error rate because the increased current density at high voltages may cause instability in the internal circuits, resulting in data transmission errors. Overvoltage or voltage instability can also accelerate memory module aging and increase error rates, as this can cause physical damage to the memory chip, such as electromigration or metal layer fractures. These three parameters interact with each other. Excessive voltage may indirectly increase error rates by increasing temperature; and increased temperature may force the system to reduce voltage to prevent overheating, which may in turn limit memory performance. In actual applications, a good heat dissipation system and reasonable voltage settings are the key to maintaining stable operation of memory modules. Excessive overclocking or poor heat dissipation environment will accelerate memory module aging and increase the risk of failure.

[0060] It should be explained that in this embodiment, by regularly evaluating the aging degree of the memory bar, components that are about to fail can be identified, thereby allowing preventive maintenance measures such as replacing the memory bar to be taken before the actual failure occurs. This can avoid unexpected system crashes, reduce downtime, and improve system availability and reliability. The performance of the aged memory bar will gradually decline, which may affect the response time and processing speed of the entire system. By evaluating the aging degree, performance bottlenecks can be identified in time, and the memory can be upgraded or replaced to ensure that the system runs in the best state. By regularly evaluating the state of the memory bar, excessive maintenance or premature replacement can be avoided, and replacement is only performed when it is really needed, which can save maintenance costs and resources. When the system is abnormal, the evaluation of the aging degree can help determine whether the problem is caused by the memory bar. For example, frequent blue screens, restarts, or data loss may be signs of memory failure. Through testing, it can be confirmed whether the memory bar is the root cause of the problem, thereby guiding maintenance personnel to perform targeted repairs. The error rate of the aged memory bar increases, which may cause data read and write errors, affecting the integrity and consistency of the data. Regular inspections can ensure data security and avoid data loss caused by memory failure. The stability and response speed of system performance directly affect user satisfaction. Ensuring that the memory modules are in good condition can avoid delays or system freezes caused by memory failure, thus providing a better user experience.

[0061] According to the memory bar performance evaluation index and the aging degree evaluation index, a comprehensive analysis is performed to obtain a memory bar abnormality evaluation index, and according to the memory bar abnormality evaluation index, it is determined whether the memory bar fails, a judgment result is obtained, and the memory bar is processed according to the judgment result.

[0062] Specifically, a memory bar abnormality evaluation index is obtained through comprehensive analysis. The specific analysis process is: according to the memory bar performance evaluation index and the aging degree evaluation index, a memory bar abnormality evaluation index is obtained through comprehensive analysis. The memory bar abnormality evaluation index is used to quantitatively evaluate the abnormality degree of the memory bar.

[0063] In a specific embodiment, the numerical expression of the memory bar abnormality evaluation index is:

[0064] ;

[0065] In the formula, Indicates the memory bar abnormality evaluation index. Indicates the memory bar performance evaluation index. Indicates the memory module aging evaluation index. Indicates the abnormal evaluation impact factor corresponding to the set memory bar performance evaluation index. Indicates the abnormal assessment impact factor corresponding to the set memory bar aging assessment index.

[0066] It should be explained that, in this embodiment, the abnormality assessment impact factor corresponding to the memory bar performance assessment index and the abnormality assessment impact factor corresponding to the memory bar aging degree assessment index are set to 0.5, both of which are extracted from the memory bar database.

[0067] It should be understood that if Figure 2 As shown, curve A represents the relationship between the memory bar performance evaluation index and the memory bar abnormality evaluation index when the memory bar aging degree evaluation index is 1.53, curve B represents the relationship between the memory bar performance evaluation index and the memory bar abnormality evaluation index when the memory bar aging degree evaluation index is 1.82, and curve C represents the relationship between the memory bar performance evaluation index and the memory bar abnormality evaluation index when the memory bar aging degree evaluation index is 2.52. Figure 2 It can be obtained that, when the value of the memory stick aging degree evaluation index remains unchanged, the larger the memory stick performance evaluation index is, the smaller the memory stick abnormality evaluation index is, and they are inversely proportional to each other. When the value of the memory stick performance evaluation index remains unchanged, the larger the memory stick aging degree evaluation index is, the larger the memory stick abnormality evaluation index is, and they are directly proportional to each other.

[0068] It needs to be explained that, in this embodiment, the value range of the abnormality assessment impact factor corresponding to the memory stick performance evaluation index and the abnormality assessment impact factor corresponding to the memory stick aging degree evaluation index is [0, 1]. Through the relationship between the memory stick performance evaluation index and the memory stick aging degree evaluation index and the memory stick abnormality assessment index in the historical data, a mapping set of the abnormality assessment impact factors corresponding to the memory stick performance evaluation index and the memory stick aging degree evaluation index is established, and the real-time memory stick performance evaluation index and the memory stick aging degree evaluation index are input to obtain the abnormality assessment impact factor corresponding to the memory stick performance evaluation index and the abnormality assessment impact factor corresponding to the memory stick aging degree evaluation index from the mapping set.

[0069] It should be understood that as the memory stick ages, the latency of its read and write operations may increase, due to slower response speeds of the storage cells or increased attenuation on the signal transmission path. This directly affects the access speed of the memory, which in turn affects the overall response time and processing speed of the system. Aging memory sticks may increase the probability of data errors, including bit flips, read errors, or write failures. These errors may be caused by unstable or damaged storage cells and require additional error correction mechanisms to correct, which also consumes system resources and reduces performance. The power consumption of aging memory sticks may increase, accompanied by more severe heating problems. Excessive temperatures will further accelerate the aging process and may cause thermal throttling or thermal protection mechanisms to be triggered, thereby limiting the performance of the memory. In some cases, some storage cells may not work properly due to aging, which will cause the actual available capacity of the memory to be lower than the nominal capacity, thus affecting performance and efficiency.

[0070] It should be explained that the memory stick database in this embodiment is used to store relevant data of the memory stick, specifically including reference standard operating frequency, allowable deviation operating frequency, critical CAS delay time and critical storage speed, reference standard operating voltage, reference standard temperature, and allowable deviation operating voltage, allowable deviation temperature and critical error rate, memory stick abnormality assessment index threshold and performance assessment influencing factor corresponding to operating frequency, performance assessment influencing factor corresponding to CAS delay time and performance assessment influencing factor corresponding to storage speed, aging degree assessment influencing factor corresponding to operating voltage, aging degree assessment influencing factor corresponding to temperature and aging degree assessment influencing factor corresponding to error rate, abnormality assessment influencing factor corresponding to memory stick performance assessment index and abnormality assessment influencing factor corresponding to memory stick aging degree assessment index. The data in the memory stick database can be obtained by collecting computer hardware detection data and real-time recording data of monitoring software and records in the computer hardware database.

[0071] Specifically, it is determined whether a memory stick fails according to a memory stick abnormality assessment indicator. The specific process is: according to the memory stick abnormality assessment indicator, a memory stick abnormality assessment indicator threshold is extracted from a memory stick database, and the memory stick abnormality assessment indicator is compared with the memory stick abnormality assessment indicator threshold. If the memory stick abnormality assessment indicator is lower than the memory stick abnormality assessment indicator threshold, it is determined that the memory stick has not failed; if the memory stick abnormality assessment indicator is higher than or equal to the memory stick abnormality assessment indicator threshold, it is determined that the memory stick has failed, and the memory stick is processed according to the judgment result.

[0072] It should be explained that memory bar abnormalities may cause system crashes, freezes, or program abnormalities. By analyzing the degree of abnormality, potential problems can be discovered in time and measures can be taken to prevent system instability. By monitoring and analyzing the abnormal conditions of the memory bar, hidden dangers can be discovered and handled in time to avoid hardware damage caused by overload, poor heat dissipation, etc. Early detection and handling of memory bar abnormalities can avoid hardware replacement and related maintenance costs caused by failures. Memory bar failures may cause data corruption or loss. By analyzing the abnormalities, data loss can be prevented and data security can be guaranteed. Regular abnormal analysis of memory bars helps to establish a systematic maintenance process and improve maintenance efficiency. Improving system stability and optimizing performance are directly related to user experience. Analyzing and handling memory bar abnormalities can reduce user dissatisfaction and distress caused by system problems.

[0073] Furthermore, the determination result is obtained and the memory stick is processed according to the determination result. Specifically, if an error is detected when the basic input / output system initializes the memory stick, the problematic memory stick needs to be identified and isolated, the system is restarted, and then the remaining memory sticks are continuously detected.

[0074] It needs to be explained that Figure 3As shown, in this embodiment, the specific process of processing the memory stick according to the judgment result is as follows: S1: pull the 3.3V power of the memory stick and the specific signal pins IO1 and IO3 of the memory stick to the integrated circuit that can communicate with the basic input and output system, S2: implement the controllable protocol of the 3.3V voltage of each memory stick slot and the detectability of the specific signal pins IO1 and IO3 of the memory stick on the integrated circuit, and can communicate with the basic input and output system, S3: after the basic input and output system detects an error when initializing the memory stick, the in-place information of the memory stick is sent to the integrated circuit, S4: then the basic input and output system performs a shutdown action, S5: the integrated circuit performs in-place statistics based on the specific signal pins IO1 and IO3, and compares it with the in-place information sent by the basic input and output system to obtain the memory stick that cannot read the SPD, S6: the integrated circuit turns off the 3.3V voltage of the memory stick that cannot read the SPD, S7: finally, the integrated circuit restarts the basic input and output system, the basic input and output system re-performs the memory initialization process, and tries to configure and test the remaining memory sticks again.

[0075] It should be explained that in this embodiment, SPD, namely Serial Presence Detect, is a chip on the memory module, which is used to store the specification information of the memory module, such as capacity, speed, timing, voltage requirements, etc. When the memory module is inserted into the motherboard, the motherboard will read the information on the SPD chip to correctly configure the memory controller to ensure stable operation of the memory.

[0076] The above contents are merely examples and explanations of the structure of the present invention. The technicians in this technical field may make various modifications or additions to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the structure of the invention or exceed the scope defined by the claims, they should all fall within the protection scope of the present invention.

Claims

1. A method for processing memory bar initialization failure, characterized in that: include: Determine whether the memory bar fails to be read. If an error memory signal is detected, it indicates that the memory bar fails to be read, and the memory bar is marked as a memory bar to be tested; Collecting the running status data of the memory bar to be tested, including the memory bar performance data and aging status data, comprehensively analyzing the memory bar performance data to obtain the memory bar performance evaluation index, and comprehensively analyzing the memory bar aging status data to obtain the memory bar aging degree evaluation index; According to the memory bar performance evaluation index and the aging degree evaluation index, a comprehensive analysis is performed to obtain a memory bar abnormality evaluation index, and according to the memory bar abnormality evaluation index, whether the memory bar fails is determined, and a judgment result is obtained and the memory bar is processed according to the judgment result; The specific numerical expression of the memory bar performance evaluation index is: ； In the formula, represents the memory bar performance evaluation index, e represents the natural constant, n represents the number of each time monitoring point, , m represents the total number of time monitoring points, Indicates the memory bank operating frequency at the nth time monitoring point. Indicates the CAS latency of the memory bar at the nth time monitoring point. Indicates the memory bar storage speed at the nth time monitoring point, Indicates the reference standard operating frequency, Indicates the allowable deviation operating frequency, Indicates the critical CAS delay duration, represents the critical storage speed, Indicates the performance evaluation impact factor corresponding to the set operating frequency, Indicates the performance evaluation impact factor corresponding to the set CAS delay duration. Indicates the performance evaluation impact factor corresponding to the set storage speed; The numerical expression of the memory bar aging evaluation index is: ； In the formula, Indicates the memory module aging evaluation index. Indicates the memory module operating voltage at the nth time monitoring point, Indicates the memory module temperature at the nth time monitoring point. Indicates the memory bar error rate at the nth time monitoring point, Indicates reference standard working voltage, Indicates the reference standard temperature, Indicates the allowable deviation working voltage, Indicates the allowable deviation temperature, represents the critical error rate, Indicates the aging assessment impact factor corresponding to the set working voltage, Indicates the aging assessment impact factor corresponding to the set temperature. Indicates the aging assessment impact factor corresponding to the set error rate; The specific numerical expression of the memory bar abnormality evaluation index is: ； In the formula, Indicates the memory bar abnormality evaluation index. Indicates the memory bar performance evaluation index. Indicates the memory module aging evaluation index. Indicates the abnormal evaluation impact factor corresponding to the set memory bar performance evaluation index. Indicates the abnormal assessment impact factor corresponding to the set memory bar aging assessment index; The memory bank is processed according to the judgment result, and the specific process is as follows: If the memory module is normal, re-insert the memory module and check whether the system configuration and hardware devices are abnormal. When the result of the judgment is that the memory stick is faulty, isolate the faulty memory stick, restart the system, and then continue to detect the remaining memory sticks.

2. The method for processing memory bar initialization failure according to claim 1, characterized in that: The specific process of determining whether the memory bank fails to be read is as follows: Use a memory detection tool to detect memory, record data and collect system log data, and aggregate the detected data into a memory stick database. Determine whether the memory stick fails to be read based on the data in the memory stick database. If an error memory signal is detected, it indicates that the memory stick fails to be read, and the memory stick is marked as a memory stick to be tested.

3. The method for processing memory bar initialization failure according to claim 2, characterized in that: The error memory signal includes the POST beep and screen display error information during the power-on self-test phase, the system log and blue screen error code during the operating system loading phase, and the error information detected by the memory detection tool.

4. The method for processing memory bar initialization failure according to claim 1, characterized in that: The memory bar performance data is comprehensively analyzed to obtain the memory bar performance evaluation index, and the specific analysis process is as follows: Deploy several time monitoring points and collect memory bar performance data at each time monitoring point, including the memory bar operating frequency, memory bar CAS delay duration and memory bar storage speed at each time monitoring point within the operation cycle. Extract the reference standard operating frequency, allowable deviation operating frequency, critical CAS delay duration and critical storage speed from the memory bar database, and obtain the memory bar performance evaluation index through comprehensive analysis.

5. The method for processing memory bar initialization failure according to claim 1, characterized in that: The memory bar aging status data is comprehensively analyzed to obtain the memory bar aging degree evaluation index, and the specific analysis process is as follows: The memory stick aging status data includes the memory stick operating voltage, memory stick temperature and memory stick error rate at each time monitoring point in the operation cycle. The reference standard operating voltage, reference standard temperature, allowable deviation operating voltage, allowable deviation temperature and critical error rate are extracted from the memory stick database, and the memory stick aging degree evaluation index is obtained through comprehensive analysis.

6. The method for processing memory bar initialization failure according to claim 5, characterized in that: The comprehensive analysis obtains the memory bar abnormality evaluation index, and the specific analysis process is as follows: According to the memory bar performance evaluation index and the aging degree evaluation index, a memory bar abnormality evaluation index is obtained through comprehensive analysis. The memory bar abnormality evaluation index is used to quantitatively evaluate the abnormality degree of the memory bar.

7. The method for processing memory bar initialization failure according to claim 6, characterized in that: The specific process of judging whether a memory bar fails according to the memory bar abnormality evaluation index is as follows: According to the memory stick abnormality assessment index, a memory stick abnormality assessment index threshold is extracted from the memory stick database, and the memory stick abnormality assessment index is compared with the memory stick abnormality assessment index threshold. If the memory stick abnormality assessment index is lower than the memory stick abnormality assessment index threshold, the memory stick is judged to be normal; if the memory stick abnormality assessment index is higher than or equal to the memory stick abnormality assessment index threshold, the memory stick is judged to be faulty.

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