Silicon wafer chamfering processing device and silicon wafer chamfering processing method

Abstract

The invention provides a silicon wafer chamfering device which comprises a grinding wheel and at least one silicon wafer bearing unit, the peripheral surface of the grinding wheel is a grinding surface, and the silicon wafer bearing unit is arranged on the radial outer side of the grinding wheel; the silicon wafer bearing unit comprises a bearing platform used for bearing a silicon wafer; the translation assembly is connected to the carrying table and is configured to move in the direction of driving the carrying table to be close to or away from the grinding wheel in the radial direction of the grinding wheel; the rotating assembly is connected to the carrying table and is configured to be capable of driving the carrying table to rotate so as to drive the silicon wafer to rotate in the circumferential direction; and the angle adjusting assembly is connected to the carrying table, and the angle adjusting assembly is configured to be capable of adjusting the inclination angle of the carrying table relative to the peripheral face of the grinding wheel. According to the silicon wafer chamfering machining device and the silicon wafer chamfering machining method, the equipment utilization rate can be increased, the number of the grinding wheels is reduced, the design difficulty is reduced, field management is facilitated, and the machining error phenomenon caused by the fact that the grinding wheels are replaced mistakenly is avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a silicon wafer chamfering processing device and a silicon wafer chamfering processing method. Background Art

[0002] Wafer refers to the silicon wafer used to make silicon semiconductor circuits. Its raw material is silicon. High-purity polycrystalline silicon is dissolved and mixed with silicon crystal seeds, and then slowly pulled out to form cylindrical single crystal silicon. After grinding, polishing and slicing, the silicon crystal rod forms a silicon wafer. After slicing, the silicon wafer needs to be chamfered to reduce the breakage rate during subsequent grinding and polishing.

[0003] Silicon wafers are the most basic materials in the semiconductor field. Various circuit element structures can be processed on them to become integrated circuit products with specific electrical functions. In the production process of silicon wafers, the edge processing of silicon wafers is very important. The presence of small cracks or cracks at the edges will cause mechanical stress on the silicon wafers, resulting in edge dislocations, causing the accumulation and shedding of harmful pollutants. In addition, edge dislocations will also cause edge dislocation growth during high-temperature treatment or surface epitaxy. Therefore, an excellent chamfering process can make the edge of the silicon wafer obtain a smooth radius circumference, reducing the adverse effects of the above-mentioned edge dislocations.

[0004] At present, the mainstream processing method for silicon wafer chamfering is to use a grinding wheel with a specific groove type to grind against the edge of the silicon wafer to replicate the specific groove shape on the grinding wheel to the edge of the silicon wafer. However, the above-mentioned silicon wafer chamfering processing method requires the use of grinding wheels with different groove types for silicon wafers with different edge morphologies. Frequent replacement of grinding wheels will reduce the equipment utilization rate and have an adverse effect on on-site management. It is easy to replace the wrong grinding wheel, resulting in processing errors. In addition, with the improvement of the manufacturing level in the chip field, the requirements for the physical dimensions of the edge morphology of silicon wafers have also increased. However, there are a large number of grinding wheels and a wide variety of grinding wheel groove designs. How to reduce the difficulty of grinding wheel groove design and reduce the number of grinding wheels have become technical problems that need to be urgently solved in the silicon wafer chamfering process. Summary of the invention

[0005] The disclosed embodiments provide a silicon wafer chamfering processing device and a silicon wafer chamfering processing method, which can improve the equipment utilization rate, reduce the number of grinding wheels, reduce the design difficulty, and facilitate on-site management, avoiding processing errors caused by grinding wheel replacement errors.

[0006] The technical solutions provided by the embodiments of the present disclosure are as follows:

[0007] In a first aspect, an embodiment of the present disclosure provides a silicon wafer chamfering processing device, which includes a grinding wheel and at least one silicon wafer carrying unit, wherein the outer peripheral surface of the grinding wheel is a grinding surface, and the silicon wafer carrying unit is arranged radially outside the grinding wheel; the silicon wafer carrying unit includes:

[0008] A stage for carrying silicon wafers;

[0009] A translation assembly connected to the carrier, the translation assembly being configured to be movable along the radial direction of the grinding wheel in a direction of driving the carrier to approach or move away from the grinding wheel;

[0010] A rotating assembly connected to the carrier, the rotating assembly being configured to drive the carrier to rotate so as to drive the silicon wafer to rotate circumferentially; and

[0011] An angle adjustment component is connected to the carrier, and the angle adjustment component is configured to be able to adjust the inclination angle of the carrier relative to the outer peripheral surface of the grinding wheel.

[0012] Exemplarily, the diameter of the grinding wheel is greater than or equal to 10 mm.

[0013] Exemplarily, the thickness of the grinding wheel is greater than or equal to 357 mm.

[0014] Exemplarily, the translation assembly includes a base and a side thrust mechanism disposed on the base; wherein,

[0015] The side-thrust mechanism is connected to the carrier, and the side-thrust mechanism includes a first drive motor, a screw component and a slider component, wherein the screw component is transmission-connected to the first drive motor, the slider component is mounted on the screw component, and the carrier is connected to the slider component, wherein the screw component is rotatable when driven by the first drive motor, and the slider component drives the carrier to approach or move away from the grinding wheel along the radial direction of the grinding wheel when the screw component rotates.

[0016] Exemplarily, the angle adjustment assembly includes a second drive motor and a first rotating shaft, the axial direction of the first rotating shaft is arranged parallel to the outer peripheral surface of the grinding wheel, the carrier is fixedly connected to the first rotating shaft, and the first rotating shaft is configured to be driven by the second drive motor to rotate around the axis of the first rotating shaft to drive the carrier to swing around the axis of the first rotating shaft.

[0017] Exemplarily, the first rotation axis is mounted on the slider component, and the carrier is connected to the slider component via the first rotation axis.

[0018] Exemplarily, the rotating assembly includes a third drive motor and a second rotating shaft, the axial direction of the second rotating shaft is arranged perpendicular to the outer peripheral surface of the grinding wheel, the carrier is fixedly connected to the second rotating shaft, and the second rotating shaft is configured to be driven by the third drive motor to rotate around the axis of the second rotating shaft, so as to drive the carrier to rotate circumferentially around the axis of the second rotating shaft.

[0019] Exemplarily, there are at least two silicon wafer carrying units, and at least two silicon wafer carrying units are distributed on different sides of the grinding wheel along the circumference of the grinding wheel.

[0020] In a second aspect, the present disclosure also provides a silicon wafer chamfering method, which is applied to the silicon wafer chamfering device as described above, and the method comprises the following steps:

[0021] placing a silicon wafer on the carrier;

[0022] The translation assembly drives the carrier to move in a direction close to or away from the grinding wheel along the radial direction of the grinding wheel to adjust the grinding amount of the silicon wafer in the radial direction, and drives the silicon wafer to rotate circumferentially for at least one circle, so that the grinding amount of the silicon wafer in the radial direction reaches a predetermined grinding amount;

[0023] The angle adjustment component is used to adjust the inclination angle of the carrier relative to the outer peripheral surface of the grinding wheel, and the silicon wafer is driven to rotate circumferentially for at least one circle to form a slant or arc surface in the chamfer shape of the edge of the silicon wafer;

[0024] Repeat the above steps to sequentially form other inclined surfaces and / or curved surfaces in the chamfer shape of the silicon wafer edge, so as to form a predetermined chamfer shape at the silicon wafer edge.

[0025] The beneficial effects brought by the embodiments of the present disclosure are as follows:

[0026] In the silicon wafer chamfering processing device and silicon wafer chamfering processing method provided by the embodiments of the present disclosure, a grinding wheel and at least one silicon wafer carrying unit are provided, the outer peripheral surface of the grinding wheel is a grinding surface, the silicon wafer carrying unit is arranged on the radial outside of the grinding wheel, the silicon wafer carrying unit includes a carrier, a translation component, a rotation component and an angle adjustment component, the silicon wafer can be carried by the carrier, and the carrier can be moved closer to or away from the grinding wheel along the radial direction of the grinding wheel by the translation component, so that the relative position relationship between the silicon wafer and the grinding wheel in the radial direction of the silicon wafer can be changed to adjust the grinding amount of the silicon wafer in the diameter direction thereof; and the angle adjustment component can adjust the inclination angle of the carrier relative to the outer peripheral surface of the grinding wheel, that is, adjust the contact angle between the edge of the silicon wafer and the outer peripheral surface of the grinding wheel, so that the silicon wafer is driven to rotate circumferentially at least one circle by the rotation component, so that the edge of the silicon wafer and the outer peripheral surface of the grinding wheel can be ground, and the edge of the silicon wafer can be processed into a predetermined chamfered morphology. It can be seen that for silicon wafers with different edge chamfering requirements, the same set of grinding wheels can be used without changing the grinding wheels. Different silicon wafer edge morphologies can be obtained by adjusting the radial relative position of the silicon wafer and the grinding wheel, as well as the relative tilt angle of the silicon wafer and the grinding wheel, and controlling the rotation of the silicon wafer relative to the grinding wheel. In this way, the problem of long production cycle caused by grinding wheel replacement can be avoided, the equipment utilization rate can be improved, and the number of grinding wheels is reduced, the design difficulty is reduced, and it is conducive to on-site management, avoiding processing errors caused by grinding wheel replacement errors. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 One of the structural schematic diagrams of the silicon wafer chamfering processing device provided by the embodiment of the present disclosure is shown;

[0028] Figure 2 A second structural schematic diagram showing a silicon wafer chamfering processing device provided in an embodiment of the present disclosure;

[0029] Figure 3 One of the schematic diagrams showing the edge chamfer morphology of a silicon wafer;

[0030] Figure 4 The second schematic diagram showing the chamfered edge morphology of a silicon wafer;

[0031] Figure 5 The schematic diagram showing the calculation principle of the grinding wheel thickness;

[0032] Figure 6 A schematic diagram representing the structure of a translation component. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0034] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0035] The features such as "parallel", "perpendicular", and "same" used in the embodiments of the present disclosure include the features such as "parallel", "perpendicular", and "same" in a strict sense, as well as the cases where "approximately parallel", "approximately perpendicular", "approximately the same", etc. include certain tolerances, taking into account the tolerances associated with the measurement of specific quantities (e.g., the limitations of the measurement system), and represent the acceptable deviation range for a specific value determined by ordinary technicians in the field. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of the value.

[0036] In addition, in this document, unless otherwise defined, the terms "substantially", "substantially", "approximately" and "about" are used to describe and explain small changes. When used with an event or situation, these terms can cover situations where the event or situation occurs exactly, and can also cover situations where the event or situation occurs approximately. For example, when used with a numerical value, these terms can include a range of variation of less than or equal to 10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, less than or equal to ±0.05%. The term "substantially coplanar" can refer to two surfaces being arranged along the same plane in the micrometer range, for example, arranged along the same plane within 40μm, 30μm, 20μm, 10μm or 1μm.

[0037] like Figure 1 and Figure 2 As shown, an embodiment of the present disclosure provides a silicon wafer chamfering processing device, which includes a grinding wheel 100 and at least one silicon wafer carrying unit 200.

[0038] See also Figure 1 As shown, the outer peripheral surface of the grinding wheel 100 may be a grinding surface 100A, and the grinding surface 100A may be a rough surface. When the silicon wafer 10 rotates relative to the grinding wheel 100, the silicon wafer 10 may be ground.

[0039] See also Figure 1 As shown, the silicon wafer carrying unit 200 may be disposed on the radial outer side of the grinding wheel 100 .

[0040] The silicon wafer carrying unit 200 may include a carrier 210 , a translation component 220 , a rotation component and an angle adjustment component 240 . The carrier 210 is used to carry the silicon wafer 10 . The translation component 220 , the rotation component and the angle adjustment component 240 are all connected to the carrier 210 .

[0041] The translation assembly 220 is configured to be able to move in the radial direction of the grinding wheel 100 in a direction that drives the stage 210 to approach or move away from the grinding wheel 100. In other words, the translation assembly 220 can move the silicon wafer 10 closer to or away from the grinding wheel 100 in the radial direction of the grinding wheel 100. In this way, the relative positional relationship between the silicon wafer 10 and the grinding wheel 100 in the radial direction of the silicon wafer 10 can be changed to adjust the grinding amount of the silicon wafer 10 in the diameter direction thereof.

[0042] The rotating assembly is configured to drive the carrier 210 to rotate, so as to drive the silicon wafer 10 to rotate circumferentially, so as to achieve relative rotation between the silicon wafer 10 and the grinding wheel 100 .

[0043] The angle adjustment assembly 240 is configured to adjust an inclination angle of the carrier 210 relative to the outer peripheral surface of the grinding wheel 100 .

[0044] In the above scheme, the platform 210 can be moved closer to or farther away from the grinding wheel 100 along the radial direction of the grinding wheel 100 by the translation component 220, so that the relative position relationship between the silicon wafer 10 and the grinding wheel 100 in the radial direction of the silicon wafer 10 can be changed to adjust the grinding amount of the silicon wafer 10 in its diameter direction; and the angle adjustment component 240 can be used to adjust the inclination angle of the platform 210 relative to the outer peripheral surface of the grinding wheel 100, that is, to adjust the contact angle between the edge of the silicon wafer 10 and the outer peripheral surface of the grinding wheel 100, so that the silicon wafer 10 is driven to rotate circumferentially at least one circle by the rotation component, so that the edge of the silicon wafer 10 and the outer peripheral surface of the grinding wheel 100 can be ground, and the edge of the silicon wafer 10 can be processed into a predetermined chamfered morphology.

[0045] For silicon wafers 10 with different edge chamfer morphology requirements, the same set of grinding wheels 100 can be used without replacing the grinding wheels 100. Only by adjusting the radial relative position of the silicon wafer 10 and the grinding wheel 100, and the relative inclination angle of the silicon wafer 10 and the grinding wheel 100, and controlling the rotation of the silicon wafer 10 relative to the grinding wheel 100, different edge morphologies of the silicon wafer 10 can be obtained accordingly, thereby avoiding the problem of long production cycle due to replacement of the grinding wheel 100 and improving the equipment utilization rate. In addition, since the number of grinding wheels 100 is reduced, the design difficulty is reduced, and it is beneficial to on-site management, avoiding processing errors caused by incorrect replacement of the grinding wheel 100.

[0046] In some exemplary embodiments, the carrier 210 is provided with one or more suction cups, through which the silicon wafer 10 can be adsorbed and fixed on the carrier 210. Fixing the silicon wafer 10 by the adsorption force of the suction cup can reduce contact damage to the silicon wafer 10. It is understandable that in other embodiments, the carrier 210 can also use other methods to fix the silicon wafer 10, which is not limited to this.

[0047] According to the use requirements, the grinding wheel 100 can be selected with different meshes and materials, and the shape of the grinding wheel 100 can include but is not limited to a disc shape. The size of the grinding wheel 100, such as parameters such as diameter and thickness, can be selected in combination with cost, rotational dynamic balance, etc., without special requirements.

[0048] Specifically, as an exemplary embodiment, the diameter of the grinding wheel 100 may be greater than or equal to 10 mm, but is not limited thereto.

[0049] The thickness of the grinding wheel 100 needs to be sufficient to achieve the edge chamfer morphology on the silicon wafer 10. Specifically, for example, the edge chamfer morphology of the silicon wafer 10 can be as follows: Figure 3 or Figure 4 See Figure 3 and Figure 4 As shown, the silicon wafer 10 may include a first surface 11 and a second surface 12 opposite to each other. The edge of the first surface 11 is chamfered to form a first chamfered surface 13, the edge of the second surface 12 is chamfered to form a second chamfered surface 14, and the transition portion between the first chamfered surface 13 and the second chamfered surface 14 is a connecting surface 15, wherein the first chamfered surface 13, the second chamfered surface 14 and the connecting surface 15 constitute the edge chamfering structure of the silicon wafer 10.

[0050] The first chamfered surface 13 is inclined at an angle α1 relative to the first surface 11, and the second chamfered surface 14 is inclined at an angle α2 relative to the second surface 12. For example, the values ​​of α1 and α2 may range from 10 to 40°.

[0051] like Figure 3 As shown, the connecting surface 15 may be an arc-shaped chamfered structure with a radius of R; or Figure 4 The connecting surface 15 shown may include two arc-shaped chamfered portions with a radius of R1 and a radius of R2, and a straight line portion located between the two arc-shaped chamfered portions.

[0052] Please combine Figure 5 As shown, when α1 and α2 are 40°, the required thickness of the grinding wheel 100 is the largest. The thickness of the grinding wheel 100 is calculated as follows: H=2*(B / cosα2), where H is the thickness of the grinding wheel 100 and B is the distance from the second chamfered surface 14 to the center of the silicon wafer 10.

[0053] For example, in some embodiments, when α1 and α2 are 40°, the thickness of the grinding wheel 100 may be 357 mm. Therefore, to achieve the edge chamfering morphology of the silicon wafer 10, the thickness of the grinding wheel 100 may be greater than or equal to 357 mm. However, this is not limited thereto.

[0054] In addition, in some exemplary embodiments, the translation assembly 220 includes a base 221 and a side thrust mechanism 222 disposed on the base 221. Figure 6As shown, the side-pushing mechanism 222 is connected to the carrier 210 , and the side-pushing mechanism 222 includes a first driving motor 2221 , a lead screw component 2222 and a slider component 2223 , wherein the lead screw component 2222 is transmission-connected to the first driving motor 2221 , and the slider component 2223 is mounted on the lead screw component 2222 .

[0055] The carrier 210 is connected to the slider member 2223 , wherein the lead screw member 2222 is rotatable by the first driving motor 2221 , and the slider member drives the carrier 210 to approach or move away from the grinding wheel 100 along the radial direction of the grinding wheel 100 when the lead screw member 2222 rotates.

[0056] By adopting the above scheme, the translation assembly 220 can drive the screw component 2222 to rotate through the first driving motor 2221, thereby driving the slider component 2223 to move on the screw component 2222, and then the carrier 210 fixedly connected to the slider component 2223 can achieve translation.

[0057] The translation assembly 220 is implemented by using the above structure, and has high movement accuracy.

[0058] It should be understood that the specific structure of the translation assembly 220 is not limited thereto. For example, the translation assembly 220 can also be implemented by any other suitable method such as cylinder drive.

[0059] In addition, as an exemplary embodiment, the angle adjustment assembly 240 includes a second drive motor and a first rotating shaft, the axial direction of the first rotating shaft is arranged parallel to the outer peripheral surface of the grinding wheel 100, the carrier 210 is fixedly connected to the first rotating shaft, and the first rotating shaft is configured to be driven by the second drive motor to rotate around the first rotating shaft's own axis to drive the carrier 210 to swing around the first rotating shaft's own axis.

[0060] In the above solution, the angle adjustment component 240 is implemented by using a second drive motor and a second rotating shaft. The second drive motor can be a servo motor, etc., to accurately control the inclination angle of the silicon wafer 10 relative to the outer peripheral surface of the grinding wheel 100.

[0061] However, the specific structure of the angle adjustment component is not limited thereto.

[0062] For example, the angle adjustment component may also change the inclination of the stage 210 by setting structures such as lead screws or cylinders at the four corners of the stage 210 to achieve the purpose of adjusting the inclination of the silicon wafer 10 .

[0063] In addition, as an exemplary embodiment, the first rotating shaft is installed on the slider member 2223, and the carrier 210 is connected to the slider member 2223 through the first rotating shaft.

[0064] As an exemplary embodiment, the rotating assembly includes a third driving motor 232 and a second rotating shaft 233, the axial direction of the second rotating shaft 233 is arranged perpendicular to the outer peripheral surface of the grinding wheel 100, the carrier 210 is fixedly connected to the second rotating shaft 233, and the second rotating shaft 233 is configured to be driven by the third driving motor 232 to rotate around the axis of the second rotating shaft 233, so as to drive the carrier 210 to rotate circumferentially around the axis of the second rotating shaft 233.

[0065] In some embodiments, the rotating assembly can be configured to rotate synchronously with the carrier 210 around the first rotating axis of the angle adjustment assembly 240, so that the carrier 210 can achieve circumferential rotation while the tilt angle relative to the grinding wheel 100 can be adjusted. It is understood that the connection relationship between the rotating assembly and the angle adjustment assembly 240 is not limited thereto.

[0066] As an exemplary embodiment, Figure 1 As shown, there are at least two silicon wafer carrying units 200 , and at least two silicon wafer carrying units 200 are distributed on different sides of the grinding wheel 100 along the circumference of the grinding wheel 100 .

[0067] For example, Figure 1 As shown, there are two silicon wafer carrying units 200 , and the two silicon wafer carrying units 200 are symmetrically distributed on two opposite radial sides of the grinding wheel 100 .

[0068] In addition, the embodiment of the present disclosure also provides a silicon wafer chamfering method, which is applied to the silicon wafer 10 chamfering device of the embodiment of the present disclosure; the method comprises the following steps:

[0069] Step S01, placing the silicon wafer 10 on the carrier 210;

[0070] Step S02, driving the carrier to move in a direction close to or away from the grinding wheel along the radial direction of the grinding wheel by the translation assembly to adjust the grinding amount of the silicon wafer in the radial direction, and driving the silicon wafer to rotate circumferentially for at least one circle, so that the grinding amount of the silicon wafer in the radial direction reaches a predetermined grinding amount;

[0071] Step S03, adjusting the inclination angle of the carrier relative to the outer peripheral surface of the grinding wheel by the angle adjustment component, driving the silicon wafer to rotate circumferentially for at least one circle, so as to form a slant or arc surface in the chamfer shape of the silicon wafer edge;

[0072] Step S04, repeating the above step S03, sequentially forming other inclined surfaces and / or curved surfaces in the chamfered shape of the silicon wafer edge, so as to form a predetermined chamfered shape at the edge of the silicon wafer.

[0073] In the above scheme, the grinding process of the edge of the silicon wafer is to first feed the silicon wafer horizontally and grind it radially. When the diameter reaches the predetermined grinding amount, the silicon wafer adjusts its tilt angle under the control of the angle adjustment component to complete the shape of one inclined surface or arc surface in the chamfer shape, and then repeat the above steps to complete the grinding of other inclined surfaces and / or arc surfaces in the chamfer shape in sequence. For example, please combine Figure 4 As shown, the inclination angle of the silicon wafer can be adjusted to grind to form a first beveled surface 13, then the inclination angle of the silicon wafer can be adjusted to grind to form a connecting surface 15, and then the inclination angle of the silicon wafer can be adjusted to grind to form a second beveled surface 14.

[0074] In the silicon wafer chamfering processing method provided by the embodiment of the present disclosure, the translation component 220 can be used to move the carrier 210 closer to or farther away from the grinding wheel 100 along the radial direction of the grinding wheel 100, so that the relative position relationship between the silicon wafer 10 and the grinding wheel 100 in the radial direction of the silicon wafer 10 can be changed to adjust the grinding amount of the silicon wafer 10 in its diameter direction; and the angle adjustment component 240 is used to adjust the inclination angle of the carrier 210 relative to the outer peripheral surface of the grinding wheel 100, that is, to adjust the contact angle between the edge of the silicon wafer 10 and the outer peripheral surface of the grinding wheel 100, so that the silicon wafer 10 is driven to rotate circumferentially at least one circle by the rotation component, so that the edge of the silicon wafer 10 and the outer peripheral surface of the grinding wheel 100 can be ground, and the edge of the silicon wafer 10 can be processed into a predetermined chamfered morphology.

[0075] It can be seen that for silicon wafers 10 with different edge chamfer morphology requirements, the same set of grinding wheels 100 can be used without replacing the grinding wheels 100. By adjusting the radial relative position of the silicon wafer 10 and the grinding wheel 100, and the relative inclination angle of the silicon wafer 10 and the grinding wheel 100, and controlling the rotation of the silicon wafer 10 relative to the grinding wheel 100, different edge morphologies of the silicon wafer 10 can be obtained. In this way, the problem of long production cycle caused by replacement of the grinding wheel 100 can be avoided, and the equipment utilization rate can be improved. In addition, since the number of grinding wheels 100 is reduced, the design difficulty is reduced, and it is convenient for on-site management, and the processing error caused by the wrong replacement of the grinding wheel 100 can be avoided.

[0076] There are a few points to note:

[0077] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0078] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.

[0079] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0080] The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A silicon wafer chamfering device, characterized in that: The invention comprises a grinding wheel and at least one silicon wafer carrying unit, wherein the outer peripheral surface of the grinding wheel is a grinding surface, and the silicon wafer carrying unit is arranged on the radial outer side of the grinding wheel; the silicon wafer carrying unit comprises: A stage for carrying silicon wafers; A translation assembly connected to the carrier, the translation assembly being configured to be movable along the radial direction of the grinding wheel in a direction of driving the carrier to approach or move away from the grinding wheel; A rotating assembly connected to the carrier, the rotating assembly being configured to drive the carrier to rotate so as to drive the silicon wafer to rotate circumferentially; and An angle adjustment component is connected to the carrier, and the angle adjustment component is configured to be able to adjust the inclination angle of the carrier relative to the outer peripheral surface of the grinding wheel.

2. The silicon wafer chamfering processing device according to claim 1, characterized in that: The diameter of the grinding wheel is greater than or equal to 10 mm.

3. The silicon wafer chamfering processing device according to claim 1, characterized in that: The thickness of the grinding wheel is greater than or equal to 357 mm.

4. The silicon wafer chamfering processing device according to claim 1, characterized in that: The translation assembly includes a base and a side thrust mechanism disposed on the base; wherein, The side-thrust mechanism is connected to the carrier, and the side-thrust mechanism includes a first drive motor, a screw component and a slider component, wherein the screw component is transmission-connected to the first drive motor, the slider component is mounted on the screw component, and the carrier is connected to the slider component, wherein the screw component is rotatable when driven by the first drive motor, and the slider component drives the carrier to approach or move away from the grinding wheel along the radial direction of the grinding wheel when the screw component rotates.

5. The silicon wafer chamfering processing device according to claim 4, characterized in that: The angle adjustment assembly includes a second drive motor and a first rotating shaft, the axial direction of the first rotating shaft is arranged parallel to the outer peripheral surface of the grinding wheel, the carrier is fixedly connected to the first rotating shaft, and the first rotating shaft is configured to be driven by the second drive motor to rotate around the first rotating shaft's own axis to drive the carrier to swing around the first rotating shaft's own axis.

6. The silicon wafer chamfering processing device according to claim 5, characterized in that: The first rotation shaft is mounted on the slider member, and the stage is connected to the slider member through the first rotation shaft.

7. The silicon wafer chamfering processing device according to claim 1, characterized in that: The rotating assembly includes a third driving motor and a second rotating shaft, the axial direction of the second rotating shaft is arranged perpendicular to the outer peripheral surface of the grinding wheel, the carrier is fixedly connected to the second rotating shaft, and the second rotating shaft is configured to be driven by the third driving motor to rotate around the axis of the second rotating shaft, so as to drive the carrier to rotate circumferentially around the axis of the second rotating shaft.

8. The silicon wafer chamfering processing device according to claim 1, characterized in that: There are at least two silicon wafer carrying units, and at least two silicon wafer carrying units are distributed on different sides of the grinding wheel along the circumference of the grinding wheel.

9. A method for chamfering a silicon wafer, characterized in that: Applicable to the silicon wafer chamfering processing device according to any one of claims 1 to 8; the method comprises the following steps: placing a silicon wafer on the carrier; The translation assembly drives the carrier to move in a direction close to or away from the grinding wheel along the radial direction of the grinding wheel to adjust the grinding amount of the silicon wafer in the radial direction, and drives the silicon wafer to rotate circumferentially for at least one circle, so that the grinding amount of the silicon wafer in the radial direction reaches a predetermined grinding amount; The angle adjustment component is used to adjust the inclination angle of the carrier relative to the outer peripheral surface of the grinding wheel, and the silicon wafer is driven to rotate circumferentially for at least one circle to form a slant or arc surface in the chamfer shape of the edge of the silicon wafer; Repeat the above steps to sequentially form other inclined surfaces and / or curved surfaces in the chamfer shape of the silicon wafer edge, so as to form a predetermined chamfer shape at the silicon wafer edge.

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