Single crystal growth device and semiconductor process equipment
By setting up a sealed space between the crucible cover and the seed crystal holder in the single crystal growth device, the problem of uneven heat transfer is solved, the radial temperature uniformity of the seed crystal is improved, and the cracking rate of the crystal is reduced.
Patent Information
- Application Number
- CN202310900697.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-07-21
- Publication Date
- 2025-01-21
AI Technical Summary
The crucible cover of the single crystal growth device has the problem of uneven heat transfer, which leads to uneven radial temperature of the seed crystals, which in turn causes internal stress to grow and increases the lobe rate.
A single crystal growth device was designed, in which a sealed space with a preset height is set between the crucible cover and the seed crystal holder. The sealed space acts as a heat insulation, reducing the temperature gradient of the seed crystal holder, thereby increasing the diameter of the seed crystal. towards temperature uniformity.
By reducing the temperature gradient of the seed crystal support, the radial temperature uniformity of the seed crystal is significantly improved and the cracking rate of the crystal is reduced.
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Figure CN119332339A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor process technology, and in particular to a single crystal growth device and semiconductor process equipment. Background Art
[0002] Single crystal growth is a method for producing crystal materials. Taking silicon carbide single crystal growth as an example, the main methods for growing silicon carbide crystals include physical vapor transport method (PVT method), high temperature chemical vapor deposition method, liquid phase method, etc. Among them, the PVT method is a relatively mature method that is more suitable for industrial mass production of crystal materials.
[0003] In the process of generating silicon carbide crystals by the PVT method, silicon carbide powder can be used as the raw material for growing single crystals, and the silicon carbide seed crystal can be bonded to the top of the crucible cover of the single crystal growth device as a seed crystal. The single crystal growth device can be heated by a heating device (such as an electromagnetic induction coil). Thus, the single crystal growth device heats the silicon carbide powder to a sublimation state by heat conduction, so that the gas phase silicon carbide is transported to the seed crystal position under the action of the axial temperature gradient and begins to grow. Then, single crystal silicon carbide is grown at a specific temperature.
[0004] In the related art, the crucible cover of the single crystal growth device has the problem of uneven heat transfer, which makes the radial temperature of the seed crystal arranged on the crucible cover uneven. In this way, the grown crystal may have internal stress, so that the grown crystal has a high cracking rate. Summary of the invention
[0005] The embodiments of the present application provide a single crystal growth device and a semiconductor process equipment to solve the problem of how to improve the radial temperature uniformity of the seed crystal.
[0006] The single crystal growth device provided in the embodiment of the present application includes: a crucible barrel and a cover assembly; an opening is provided at one end of the crucible barrel, and the cover assembly is used to cover the opening; the cover assembly includes a connected crucible cover and a seed crystal holder, the target surface on the top of the seed crystal holder is opposite to and spaced from the bottom surface of the crucible cover, and a sealed space of a preset height is surrounded by the target surface and the bottom surface of the crucible cover.
[0007] Optionally, the seed crystal support includes a support plate and an annular connecting portion that are connected to each other, the annular connecting portion being arranged on the outer periphery of the support plate, the annular connecting portion protruding toward the crucible cover and connected to the crucible cover, and the target surface being the top surface of the support plate; a seed crystal connecting portion is arranged on the bottom surface of the support plate, and an orthographic projection of the annular connecting portion on the bottom surface of the support plate is arranged outside the seed crystal connecting portion.
[0008] Optionally, the crucible cover comprises a boss protruding in a direction close to the crucible barrel, and an outer peripheral wall of the boss is threadedly connected to an inner peripheral wall of the annular connecting portion.
[0009] Optionally, the cover assembly further includes a retaining ring; the retaining ring is disposed on a side of the support plate where the seed crystal connecting portion is disposed, and the retaining ring is sleeved on an outer side of the seed crystal connecting portion.
[0010] Optionally, the cover assembly further comprises a support sleeve, which is connected to the crucible cover and is sleeved on the outside of the seed crystal holder and the retaining ring, and a side of the support sleeve close to the crucible barrel is used to connect to an end of the crucible barrel provided with the opening.
[0011] Optionally, the support sleeve is provided with a protruding portion extending toward the retaining ring, and an end of the retaining ring away from the seed crystal connecting portion is connected to the protruding portion.
[0012] Optionally, a side portion of the protruding portion facing the retaining ring is threadedly connected to an end portion of the retaining ring away from the seed crystal connecting portion.
[0013] Optionally, a recessed portion is provided on a circumferential side portion of the crucible cover, and a circumferential side wall of the recessed portion is threadedly connected to a side of the support sleeve close to the crucible cover.
[0014] Optionally, a blind hole is formed in a central portion of a side of the crucible cover away from the crucible barrel.
[0015] Optionally, a distance between the target surface and a bottom surface of the seed crystal holder is greater than or equal to 0.5 mm.
[0016] Optionally, the preset height is greater than 0.001 mm.
[0017] The semiconductor process equipment provided by the embodiments of the present application includes: any one of the single crystal growth devices provided by the embodiments of the present application.
[0018] Optionally, the semiconductor process equipment further includes a heat preservation cavity and a heating device, the single crystal growth device is arranged in the heat preservation cavity, and the heating device is used to heat the growth material arranged in the single crystal growth device.
[0019] At least one of the above technical solutions adopted in the embodiments of the present application can achieve the following beneficial effects:
[0020] In the embodiment of the present application, the seed crystal is arranged on the bottom surface of the seed crystal holder. Since a sealed space of a preset height is provided between the target surface at the top of the seed crystal holder and the bottom surface of the crucible cover, the sealed space can play a role of heat insulation, and can reduce the temperature gradient of the seed crystal holder, so as to achieve the effect of improving the radial temperature uniformity of the seed crystal. Therefore, the problem of internal stress in the grown crystal due to the uneven radial temperature of the seed crystal can be improved, so as to achieve the effect of reducing the crystal splitting rate. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.
[0022] Figure 1 A schematic diagram of a single crystal growth device provided in an embodiment of the present application;
[0023] Figure 2 An exploded schematic diagram of a single crystal growth device provided in an embodiment of the present application;
[0024] Figure 3 An exploded schematic diagram of a single crystal growth device in a cut state provided in an embodiment of the present application;
[0025] Figure 4 A schematic diagram of a cover assembly provided in an embodiment of the present application;
[0026] Figure 5 A schematic diagram of a change in the temperature difference between the edge and the center of a silicon carbide seed crystal as a function of a preset height provided in an embodiment of the present application;
[0027] Figure 6 A schematic diagram of the change in the temperature difference between the edge and the center of a silicon carbide seed crystal with the thickness of the support plate provided in an embodiment of the present application;
[0028] Figure 7 A schematic diagram of a semiconductor process equipment provided in an embodiment of the present application.
[0029] Description of reference numerals:
[0030] 10-semiconductor process equipment; 100-single crystal growth device; 110-crucible barrel; 111-opening; 120-cover assembly; 121-crucible cover; 1211-boss; 1212-recess; 1213-blind hole; 122-seed crystal support; 1221-support plate; 1222-annular connecting portion; 1223-seed crystal connecting portion; 123-sealed space; 124-blocking ring; 125-support sleeve; 1251-protruding portion; 200-seed crystal; 300-insulation cavity; 400-heating device. DETAILED DESCRIPTION
[0031] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.
[0032] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0033] In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article.
[0034] Furthermore, it is required that the present application be understood not only by the actual terms used but also by the meanings connoted by each term.
[0035] The technical solutions provided by various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.
[0036] The present application embodiment provides a single crystal growth device. Figures 1 to 4 The single crystal growth device 100 provided in the embodiment of the present application includes: a crucible barrel 110 and a cover assembly 120. It should be noted here that single crystal growth is a technology that allows the seed crystal to grow by contacting the raw material with the seed crystal under process conditions such as high temperature and high pressure.
[0037] An opening 111 is provided at one end of the crucible barrel 110, and a cover assembly 120 is used to cover the opening 111. The cover assembly 120 may include a crucible cover 121 and a seed crystal holder 122 connected to each other. The seed crystal holder 122 may be used to set the seed crystal 200. The target surface on the top of the seed crystal holder 122 is opposite to the bottom surface of the crucible cover 121 and is spaced apart, and a sealed space 123 of a preset height is surrounded between the target surface and the bottom surface of the crucible cover 121.
[0038] In this way, in the embodiment of the present application, the seed crystal 200 is disposed on the bottom surface of the seed crystal holder 122. Since a sealed space 123 of a preset height is provided between the target surface at the top of the seed crystal holder 122 and the bottom surface of the crucible cover 121, the sealed space 123 can play a role in heat insulation, and can reduce the temperature gradient of the seed crystal holder 122, so as to achieve the effect of improving the radial temperature uniformity of the seed crystal 200. Therefore, the problem of internal stress in the grown crystal due to the uneven radial temperature of the seed crystal 200 can be improved, so as to achieve the effect of reducing the crystal break rate.
[0039] refer to Figure 1 In some embodiments, a blind hole 1213 is provided at the center of the side of the crucible cover 121 away from the crucible barrel 110. The blind hole 1213 is a process hole. For example, the temperature of the process hole can be detected to determine the temperature in the crucible barrel 110. For example, the hole wall of the blind hole 1213 can be provided with a threaded portion, and the threaded portion can be connected by a threaded connector, so that the single crystal growth device 100 can be hoisted by hoisting the threaded connector to move the single crystal growth device 100.
[0040] Combination Figure 1 , since a blind hole 1213 is provided at the center of the side of the crucible cover 121 away from the crucible barrel 110, the thickness of the crucible cover 121 will be uneven, and the temperature of each part of the crucible cover 121 will also be uneven. Therefore, if the solution in the related art is adopted and the seed crystal is directly set on the bottom surface of the crucible cover, the radial temperature of the seed crystal set on the bottom surface of the crucible cover will be uneven. However, by adopting the solution provided in the embodiment of the present application, the blind hole 1213 on the top of the crucible cover 121 can be isolated by using the sealed space 123, and the temperature gradient of the seed crystal holder 122 can be used to achieve the effect of improving the radial temperature uniformity of the seed crystal 200. It should be noted that in other embodiments, the blind hole 1213 may not be provided on the top of the crucible cover 121. In the case where the crucible cover 121 has a problem of uneven heat transfer due to the provision of other structures, the solution of the system of the embodiment of the present application can also be used to solve the problem.
[0041] refer to Figure 3 and Figure 4In some embodiments, the seed crystal holder 122 may include a supporting plate 1221 and an annular connecting portion 1222 connected to each other. Exemplarily, the supporting plate 1221 may be a flat plate. The annular connecting portion 1222 is disposed on the outer periphery of the supporting plate 1221, and the annular connecting portion 1222 protrudes toward the crucible cover 121 and is connected to the crucible cover 121. The target surface described above may be the top surface of the supporting plate 1221. In other words, the top surface of the supporting plate 1221, the inner side surface of the annular connecting portion 1222, and the bottom surface of the crucible cover 121 may enclose a sealed space 123 of a preset height.
[0042] The bottom surface of the support plate 1221 is provided with a seed crystal connection portion 1223. The orthographic projection of the annular connection portion 1222 on the bottom surface of the support plate 1221 is arranged outside the seed crystal connection portion 1223. In an embodiment of the present application, the seed crystal 200 can be arranged on the seed crystal connection portion 1223. Exemplarily, the seed crystal 200 can be bonded to the annular connection portion 1222 using an adhesive. It should be noted that, generally speaking, the seed crystal 200 is disc-shaped. Correspondingly, the annular connection portion 1222 can be circular, the support plate 1221 can be disc-shaped, and the annular connection portion 1222 can be annular.
[0043] In an embodiment of the present application, the annular connection part 1222 can be projected onto the bottom surface of the support plate 1221 to surround the seed crystal connection part 1223, so that the side wall of the sealed space 123 can be projected onto the bottom surface of the support plate 1221 to surround the seed crystal connection part 1223, so that the sealed space 123 can insulate various parts of the seed crystal connection part 1223, so as to achieve the effect of improving the radial temperature uniformity of the seed crystal 200.
[0044] Exemplarily, the distance between the target surface and the bottom surface of the seed crystal holder 122 may be greater than or equal to 0.5 mm. Wherein, in the case where the seed crystal holder 122 includes a connected support plate 1221, the thickness of the support plate 1221 may be greater than or equal to 0.5 mm. It should be noted that, in the case where the thickness of the support plate 1221 is within a preset range, for example, the preset range may be 1 to 10 mm, the greater the thickness of the support plate 1221, the better the radial thermal conductivity of the support plate 1221, and the smaller the radial temperature gradient of the support plate 1221. Furthermore, the radial temperature uniformity of the seed crystal 200 can be further improved by appropriately increasing the thickness of the support plate 1221. It should also be noted that the maximum value of the thickness of the support plate 1221 can be determined based on experiments, and the maximum value of the thickness of the support plate 1221 is not listed here.
[0045] For example, the preset height of the sealed space 123 may be greater than 0.001 mm. In this way, an air gap layer may be formed between the seed crystal holder 122 and the bottom surface of the crucible cover 121, so that the air gap layer plays a role of heat insulation, thereby achieving the effect of improving the radial temperature uniformity of the seed crystal 200.
[0046] refer to Figure 3 and Figure 4 In some embodiments, the crucible cover 121 may include a boss 1211 that protrudes toward the direction close to the crucible barrel 110. The outer peripheral wall of the boss 1211 is threadedly connected to the inner peripheral wall of the annular connecting portion 1222. Exemplarily, the outer peripheral wall of the boss 1211 may be provided with a first thread, and the inner peripheral wall of the annular connecting portion 1222 may be provided with a second thread, and the second thread can be threadedly connected to the first thread. Thus, the seed crystal holder 122 can be threadedly connected to the crucible cover 121 by threading the second thread with the first thread. It should be noted that the seed crystal holder 122 can be threadedly connected to the crucible cover 121 to improve the convenience of disassembly and assembly. In addition, exemplarily, the seed crystal holder 122 and the crucible cover 121 can also be connected by snapping or other methods, which are not listed here one by one.
[0047] In some embodiments, the cover assembly 120 may further include a retaining ring 124. Exemplarily, the retaining ring 124 may be a graphite ring. The retaining ring 124 is disposed on one side of the support plate 1221 where the seed crystal connection portion 1223 is disposed, and the retaining ring 124 is sleeved on the outer side of the seed crystal connection portion 1223. In this way, the seed crystal 200 can grow downward in the space surrounded by the retaining ring 124. After the crystal growth is completed, the retaining ring 124 and the seed crystal support 122 can be taken out together. Generally speaking, the retaining ring 124 is a consumable, and a new retaining ring 124 can be replaced each time a single crystal is grown.
[0048] In some embodiments, the cover assembly 120 may further include a support sleeve 125. The support sleeve 125 is connected to the crucible cover 121, and is sleeved on the outside of the seed crystal holder 122 and the retaining ring 124. The side of the support sleeve 125 close to the crucible barrel 110 is used to connect with the end of the crucible barrel 110 provided with the opening 111. In this way, an annular cavity can be formed between the support sleeve 125 and the retaining ring 124, and the annular cavity can be used to insulate the area inside the retaining ring 124, which can further improve the radial temperature uniformity of the seed crystal 200.
[0049] In some embodiments, the support sleeve 125 is provided with a protrusion 1251 extending toward the retaining ring 124, and one end of the retaining ring 124 away from the seed crystal connecting portion 1223 is connected to the protrusion 1251. In this way, the support sleeve 125 can be used to support the retaining ring 124.
[0050] In some embodiments, the side of the protrusion 1251 facing the retaining ring 124 is threadedly connected to the end of the retaining ring 124 away from the seed crystal connection portion 1223. Exemplarily, the side of the protrusion 1251 facing the retaining ring 124 is provided with a third thread, and the end of the retaining ring 124 away from the seed crystal connection portion 1223 is provided with a fourth thread, and the fourth thread can be threadedly connected to the third thread. In this way, the retaining ring 124 can be threadedly connected to the protrusion 1251 by threading the fourth thread with the third thread, thereby improving the convenience of disassembly and assembly of the retaining ring 124. In addition, illustratively, the retaining ring 124 can also be connected to the protrusion 1251 by snapping or other methods, which are not listed here one by one.
[0051] In some embodiments, a recessed portion 1212 is provided on the circumferential side of the crucible cover 121. The circumferential side wall of the recessed portion 1212 is threadedly connected to the side of the support sleeve 125 close to the crucible cover 121. Among them, the recessed portion 1212 can be recessed radially inwardly along the crucible cover 121. Exemplarily, the circumferential side wall of the recessed portion 1212 is provided with a fifth thread, and the side of the support sleeve 125 close to the crucible cover 121 is provided with a sixth thread, and the sixth thread can be threadedly connected to the fifth thread. In this way, the support sleeve 125 can be threadedly connected to the crucible cover 121 by the sixth thread being threadedly connected to the fifth thread. In addition, illustratively, the support sleeve 125 and the crucible cover 121 can also be connected by snapping or by other means, which are not listed here one by one.
[0052] It should be noted that the reference Figure 3 and Figure 4 The side of the support sleeve 125 facing away from the crucible cover 121 is provided with an abutment platform, and the abutment platform is used to abut against the end of the crucible barrel 110 provided with the opening 111. In addition, the side of the support sleeve 125 facing away from the crucible cover 121 can be threadedly connected with the end of the crucible barrel 110 provided with the opening 111.
[0053] In order to facilitate those skilled in the art to better implement the solutions provided in the embodiments of the present application, more detailed examples are provided below for reference by those skilled in the art.
[0054] Exemplarily, the seed crystal 200 is a silicon carbide seed crystal. After the silicon carbide seed crystal is cleaned, a protective film layer can be provided on the back of the silicon carbide seed crystal. For example, the protective film layer can be a graphite layer or a diamond layer, etc. The protective layer is mainly used to provide protection for the back of the seed crystal to prevent the back of the seed crystal from generating void defects due to high-temperature sublimation.
[0055] Further, a layer of organic glue may be applied to the seed crystal connection portion 1223 of the support plate 1221. Exemplarily, the organic glue may be AB glue. Specifically, the organic glue may be epoxy resin glue. Thus, the side of the silicon carbide seed crystal provided with the protective film layer may be bonded to the seed crystal connection portion 1223 of the support plate 1221 to fix the silicon carbide seed crystal.
[0056] Furthermore, the seed crystal holder 122 bonded with the silicon carbide seed crystal can be threadedly connected to the crucible cover 121. The retaining ring 124 can be threadedly connected to the protruding portion 1251 of the support sleeve 125, and the support sleeve 125 can be threadedly connected to the crucible cover 121 to complete the assembly of the cover assembly 120.
[0057] Furthermore, silicon carbide powder can be loaded into the crucible barrel 110, and then the cover assembly 120 is covered on the crucible barrel 110. After the single crystal growth device 100 is assembled, the single crystal growth device 100 can be set in a semiconductor process equipment, so that the semiconductor process equipment is used to construct a process environment for single crystal growth, so that the silicon carbide seed crystal grows.
[0058] It should be noted that in the related art, the silicon carbide seed crystal is directly bonded to the bottom surface of the crucible cover. During the single crystal growth process, the heat transfer method of the single crystal growth device is as follows: the silicon carbide powder in the crucible barrel sublimates, and the generated silicon carbide vapor is deposited at the silicon carbide seed crystal, and solidification and heat release occur. The heat at the silicon carbide seed crystal is axially heat-conducted to the crucible cover. The crucible cover then conducts the heat to the top through axial heat conduction, and finally the heat is radiated from the top of the crucible cover to the cavity of the semiconductor process equipment. Since there is a blind hole (for example, a temperature measuring hole) at the center of the top of the crucible cover, the heat dissipation at the center will be faster, which will cause the radial temperature of the silicon carbide seed crystal to be uneven.
[0059] By adopting the solution provided in the embodiment of the present application, in the process of silicon carbide vapor depositing at the silicon carbide seed crystal and solidifying and releasing heat, the heat at the silicon carbide seed crystal is first conducted to the seed crystal holder 122. The heat of the seed crystal holder 122 will first make its own temperature uniform under the action of heat conduction, and then be transferred to the crucible cover 121 through the upper surface of the seed crystal holder 122. Since a sealed space 123 of a preset height is provided between the top of the seed crystal holder 122 and the bottom surface of the crucible cover 121, and since the thermal conductivity of gas is generally lower than that of solid, the gas in the sealed space 123 can play a role in heat insulation, thereby effectively reducing the radial temperature gradient of the silicon carbide seed crystal.
[0060] It should also be noted that the applicant has also conducted relevant experiments. In one experiment, the thickness of the support plate 1221 is 2 mm, and the distance between the top surface of the support plate 1221 and the bottom surface of the crucible cover 121 is 1 to 4 mm, that is, the preset height of the sealed space 123 is 1 to 4 mm. The obtained temperature difference between the edge and the center of the silicon carbide seed crystal varies with the preset height. Figure 5 .Depend on Figure 5 It can be seen that when the preset height of the sealed space 123 exceeds 1.5 mm, the temperature difference between the edge and the center of the silicon carbide seed crystal reaches a stable state of about 6 degrees Celsius because the radiation heat transfer reaches saturation.
[0061] In another experiment, the preset height of the sealed space 123 is 2 mm, and the thickness of the support plate 1221 is 1 to 10 mm. The obtained temperature difference between the edge and the center of the silicon carbide seed crystal varies with the thickness of the support plate. Figure 6 .Depend on Figure 6 It can be seen that as the thickness of the support plate 1221 increases, the temperature difference between the edge and the center of the silicon carbide seed crystal decreases from 10 degrees Celsius to degrees Celsius, which can significantly reduce the radial temperature gradient on the growth surface of the silicon carbide seed crystal.
[0062] The present application embodiment provides a semiconductor process equipment. Figure 7 The semiconductor process equipment 10 includes any single crystal growth device 100 provided in the embodiments of the present application.
[0063] In some embodiments, the semiconductor process equipment may further include a heat preservation chamber 300 and a heating device 400 , wherein the single crystal growth device 100 is disposed in the heat preservation chamber 300 , and the heating device 400 is used to heat the growth material disposed in the single crystal growth device 100 .
[0064] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.
[0065] Although the embodiments of the present application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the embodiments of the present application, and the scope of the embodiments of the present application is defined by the appended claims and their equivalents.
Claims
1. A single crystal growth device (100), characterized in that: include: A crucible barrel (110) and a cover assembly (120); An opening (111) is provided at one end of the crucible barrel (110), and the cover assembly (120) is used to cover the opening (111); the cover assembly (120) comprises a crucible cover (121) and a seed crystal holder (122) connected to each other, a target surface on the top of the seed crystal holder (122) is opposite to and spaced from the bottom surface of the crucible cover (121), and a sealed space (123) of a preset height is provided between the target surface and the bottom surface of the crucible cover (121).
2. The single crystal growth device (100) according to claim 1, characterized in that: The seed crystal holder (122) comprises a supporting plate (1221) and an annular connecting portion (1222) connected to each other, wherein the annular connecting portion (1222) is arranged on the outer periphery of the supporting plate (1221), the annular connecting portion (1222) protrudes toward the crucible cover (121) and is connected to the crucible cover (121), and the target surface is the top surface of the supporting plate (1221); The bottom surface of the support plate (1221) is provided with a seed crystal connection portion (1223), and the orthographic projection of the annular connection portion (1222) on the bottom surface of the support plate (1221) is arranged outside the seed crystal connection portion (1223).
3. The single crystal growth device (100) according to claim 2, characterized in that: The crucible cover (121) comprises a boss (1211) protruding in a direction close to the crucible barrel (110), and the outer peripheral wall of the boss (1211) is threadedly connected to the inner peripheral wall of the annular connecting portion (1222).
4. The single crystal growth device (100) according to claim 2, characterized in that: The cover assembly (120) further comprises a retaining ring (124); the retaining ring (124) is arranged on a side of the support plate (1221) where the seed crystal connecting portion (1223) is arranged, and the retaining ring (124) is sleeved on the outer side of the seed crystal connecting portion (1223).
5. The single crystal growth device (100) according to claim 4, characterized in that: The cover assembly (120) further comprises a support sleeve (125), wherein the support sleeve (125) is connected to the crucible cover (121), and the support sleeve (125) is sleeved on the outside of the seed crystal holder (122) and the retaining ring (124), and a side of the support sleeve (125) close to the crucible barrel (110) is used to be connected to an end of the crucible barrel (110) provided with the opening (111).
6. The single crystal growth device (100) according to claim 5, characterized in that: The support sleeve (125) is provided with a protruding portion (1251) extending toward the retaining ring (124), and one end of the retaining ring (124) away from the seed crystal connecting portion (1223) is connected to the protruding portion (1251).
7. The single crystal growth device (100) according to claim 6, characterized in that: The side of the protruding portion (1251) facing the retaining ring (124) is threadedly connected to the end of the retaining ring (124) away from the seed crystal connecting portion (1223).
8. The single crystal growth device (100) according to claim 5, characterized in that: A recessed portion (1212) is provided on the circumferential side portion of the crucible cover (121), and a circumferential side wall of the recessed portion (1212) is threadedly connected to a side of the support sleeve (125) close to the crucible cover (121).
9. The single crystal growth device (100) according to claim 1, characterized in that: A blind hole (1213) is provided at the center of the side of the crucible cover (121) away from the crucible barrel (110).
10. The single crystal growth device (100) according to claim 1, characterized in that: The distance between the target surface and the bottom surface of the seed crystal holder (122) is greater than or equal to 0.5 mm; and / or the preset height is greater than 0.001 mm.
11. A semiconductor process equipment, characterized in that: include: The single crystal growth apparatus (100) according to any one of claims 1 to 10.
12. The semiconductor process equipment according to claim 11, characterized in that: The semiconductor process equipment further comprises a heat preservation cavity (300) and a heating device (400), wherein the single crystal growth device (100) is arranged in the heat preservation cavity (300), and the heating device (400) is used to heat the growth material arranged in the single crystal growth device (100).