Semiconductor photonic device and forming method thereof

Abstract

The semiconductor photonic device includes a multilayer coupler structure. The multi-layer coupler structure includes a plurality of optical coupler layers, which enables characteristics of the optical coupler layers to be configured to achieve efficient optical coupling for a broad spectrum of optical wavelengths. This enables the multi-layer coupler structure to process wide bandwidth optical signals, which enables the semiconductor photonic device to support high bandwidth optical communication applications. In addition, the optical coupler layer of the multi-layer coupler device enables the performance of the multi-layer coupler structure to be improved using less complex and lower cost semiconductor fabrication processes and techniques. Further, the optical coupler layers of the multi-layer coupler structure enable the multi-layer coupler structure to handle bi-directional transmission of optical signals, thereby enabling optical signals to be transmitted between the layers of the semiconductor photonic device. The embodiment of the invention also relates to a semiconductor photonic device and a forming method thereof.

Description

Technical Field

[0001] Embodiments of the present application relate to semiconductor photonic devices and methods of forming the same. Background Art

[0002] In semiconductor photonics, semiconductor materials such as silicon are used as light transmission media. For example, semiconductor photonic devices can be used for optical communications and can include coupling systems that convert between electrical and optical signals. In addition, some semiconductor photonic devices can include integrated electronic components on the same semiconductor substrate for processing transmitted or received optical signals. Summary of the invention

[0003] Some embodiments of the present application provide a semiconductor photonic device, comprising: a dielectric layer; and a multilayer optical coupler located in the dielectric layer, comprising: a first optical coupler layer having a first top view profile; and a second optical coupler layer adjacent to the first optical coupler layer, having a second top view profile different from the first top view profile.

[0004] Other embodiments of the present application provide a semiconductor photonic device, comprising: a dielectric layer; and a multilayer optical coupler, located in the dielectric layer, comprising: a first optical coupler layer, comprising: a first end, adjacent to an optical signal input / output (I / O); and a second end, opposite to the first end, wherein a top view width of the first optical coupler layer increases from the first end to a midpoint between the first end and the second end, and wherein the top view width of the first optical coupler layer decreases between the midpoint and the second end; and a second optical coupler layer, adjacent to the first optical coupler layer, comprising: a third end, adjacent to the optical signal input / output; and a fourth end, opposite to the third end.

[0005] Still other embodiments of the present application provide a method for forming a semiconductor photonic device, comprising: forming a dielectric layer of the semiconductor photonic device; forming a first optical coupler layer having a first cross-sectional thickness in the dielectric layer; and forming a second optical coupler layer adjacent to the first optical coupler layer in the dielectric layer, the second optical coupler layer having a second cross-sectional thickness greater than the first cross-sectional thickness. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] When read in conjunction with the accompanying drawings, various aspects of the disclosed embodiments can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the size of the various components may be arbitrarily increased or reduced.

[0007] Figure 1 is a diagram of an exemplary environment in which the systems and / or methods described herein may be implemented.

[0008] FIG. 2A to FIG. 2D is a diagram of an exemplary semiconductor photonic device described herein.

[0009] Figure 3 is a diagram of an exemplary implementation of optical coupling in a semiconductor photonic device described herein.

[0010] FIG. 4A to FIG. 4E is a diagram of an exemplary embodiment of forming a semiconductor photonic device described herein.

[0011] FIG. 5A to FIG. 5D is a diagram of an exemplary semiconductor photonic device described herein.

[0012] Figure 6 is a diagram of an exemplary implementation of optical coupling in a semiconductor photonic device described herein.

[0013] 7A to 7E is a diagram of an exemplary embodiment of forming a semiconductor photonic device described herein.

[0014] FIG. 8A to FIG. 8C is a diagram of an exemplary semiconductor photonic device described herein.

[0015] 9A to 9C is a diagram of an exemplary semiconductor photonic device described herein.

[0016] FIG. 10A to FIG. 10C is a diagram of an exemplary semiconductor photonic device described herein.

[0017] FIG. 11A to FIG. 11C is a diagram of an exemplary semiconductor photonic device described herein.

[0018] Fig. 12A and Fig. 12B is a diagram of an exemplary semiconductor photonic device described herein.

[0019] Fig.13A and Fig. 13B is a diagram of an exemplary semiconductor photonic device described herein.

[0020] FIG. 14A to FIG. 14C is a diagram of an exemplary semiconductor photonic device described herein.

[0021] Fig.15A and Fig. 15B is a diagram of an exemplary semiconductor photonic device described herein.

[0022] FIG. 16A to FIG. 16F is a diagram of an exemplary semiconductor photonic device described herein.

[0023] Fig.17 is a diagram of exemplary components of a device described herein.

[0024] Fig.18 is a flow chart of an exemplary process associated with forming the semiconductor photonic devices described herein. DETAILED DESCRIPTION

[0025] The following disclosure provides many different embodiments or examples for realizing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the disclosed embodiments. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the disclosed embodiments may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0026] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another (or additional) elements or components as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0027] An optical signal may be provided from a fiber optic cable through an optical coupler device to an optical circuit of a semiconductor photonic device. The optical coupler device may include a waveguide that confines and directs the optical signal through a dielectric region to a photonic device, such as a photodetector or an optical modulator, among other examples. In some instances, the optical coupler device may have limited optical bandwidth capabilities due to the ability to process optical signals within a specific wavelength range. Therefore, the optical coupler device may not support high bandwidth applications, such as data center optical communications. Additionally and / or optionally, limitations in the semiconductor manufacturing process may not support adjustment of parameters of the optical coupler device (e.g., thickness, length, positioning within the semiconductor photonic device), which may result in the inability to achieve high optical coupling efficiency for the optical coupler device.

[0028] In some embodiments described herein, the semiconductor photonic device includes a multilayer coupler structure. The multilayer coupler structure includes a plurality of optical coupler layers, which enables the properties of the optical coupler layers (e.g., material, refractive index, shape, size, positioning) to be configured to achieve effective optical coupling for a wide spectrum of optical wavelengths. This enables the multilayer coupler structure to process wide-bandwidth optical signals, which enables the semiconductor photonic device to support high-bandwidth optical communication applications. In addition, the optical coupler layers of the multilayer coupler device enable the performance of the multilayer coupler structure to be improved using less complex and lower-cost semiconductor manufacturing processes and techniques. In addition, the optical coupler layers of the multilayer coupler structure enable the multilayer coupler structure to handle bidirectional transmission of optical signals, thereby enabling optical signals to be transmitted between the various layers of the semiconductor photonic device.

[0029] Figure 1 1 is a diagram of an exemplary environment 100 in which the systems and / or methods described herein may be implemented. Figure 1 As shown in , environment 100 may include multiple semiconductor processing tools 102-114 and a wafer / die transport tool 116. Multiple semiconductor processing tools 102-114 may include a deposition tool 102, an exposure tool 104, a development tool 106, an etching tool 108, a planarization tool 110, a plating tool 112, an ion implantation tool 114, and / or another type of semiconductor processing tool. The tools included in the exemplary environment 100 may be included in a semiconductor clean room, a semiconductor foundry, a semiconductor processing facility, and / or a semiconductor manufacturing facility, among other examples.

[0030] The deposition tool 102 is a semiconductor processing tool including a semiconductor processing chamber and one or more devices capable of depositing various types of materials onto a substrate. In some embodiments, the deposition tool 102 includes a spin coating tool capable of depositing a photoresist layer on a substrate such as a wafer. In some embodiments, the deposition tool 102 includes a chemical vapor deposition (CVD) tool, such as a plasma enhanced CVD (PECVD) tool, a low pressure CVD (LPCVD) tool, a high density plasma CVD (HDP-CVD) tool, a sub-atmospheric pressure CVD (SACVD) tool, an atomic layer deposition (ALD) tool, a plasma enhanced atomic layer deposition (PEALD) tool, or another type of CVD tool. In some embodiments, the deposition tool 102 includes a physical vapor deposition (PVD) tool, such as a sputtering tool or another type of PVD tool. In some embodiments, the exemplary environment 100 includes a plurality of different types of deposition tools 102. As used herein, "deposition tool 102" may refer to one or more deposition tools 102, one or more of the same type of deposition tools 102, and / or one or more different types of deposition tools 102, in addition to other examples.

[0031] The exposure tool 104 is a semiconductor processing tool capable of exposing the photoresist layer to a radiation source, such as an ultraviolet (UV) source (e.g., a deep UV light source, an extreme UV (EUV) source, etc.), an x-ray source, an electron beam (e-beam) source, etc. The exposure tool 104 can expose the photoresist layer to the radiation source to transfer a pattern from a photomask to the photoresist layer. The pattern can include one or more semiconductor device layer patterns for forming one or more semiconductor devices, can include patterns for forming one or more structures of a semiconductor device, can include patterns for etching various portions of a semiconductor device, etc. In some embodiments, the exposure tool 104 includes a scanner, a stepper, or a similar type of exposure tool.

[0032] The developing tool 106 is a semiconductor processing tool capable of developing a photoresist layer that has been exposed to a radiation source to develop a pattern transferred to the photoresist layer from the exposure tool 104. In some embodiments, the developing tool 106 develops the pattern by removing unexposed portions of the photoresist layer. In some embodiments, the developing tool 106 develops the pattern by removing exposed portions of the photoresist layer. In some embodiments, the developing tool 106 develops the pattern by dissolving exposed or unexposed portions of the photoresist layer using a chemical developer.

[0033] The etching tool 108 is a semiconductor processing tool capable of etching various types of materials of a substrate, wafer, or semiconductor device. For example, the etching tool 108 may include a wet etching tool, a dry etching tool, etc. In some embodiments, the etching tool 108 includes a chamber filled with an etchant, and the substrate is placed in the chamber for a specific period of time to remove a specific amount of one or more portions of the substrate. In some embodiments, the etching tool 108 can use plasma etching or plasma assisted etching to etch one or more portions of the substrate, which can involve using an ionized gas to etch the one or more portions isotropically or directionally.

[0034] The planarization tool 110 is a semiconductor processing tool capable of polishing or planarizing individual layers of a wafer or semiconductor device. For example, the planarization tool 110 may include a chemical mechanical planarization (CMP) tool and / or another type of planarization tool that polishes or planarizes a layer or surface of a deposited or plated material. The planarization tool 110 may polish or planarize the surface of a semiconductor device with a combination of chemical and mechanical forces (e.g., chemical etching and free grinding polishing). The planarization tool 110 may utilize abrasive and corrosive chemical slurries in conjunction with a polishing pad and a retaining ring (e.g., typically having a larger diameter than the semiconductor device). The polishing pad and the semiconductor device may be pressed together by a dynamic polishing head and held in place by a retaining ring. The dynamic polishing head may rotate with different rotation axes to remove material and flatten any irregular topography of the semiconductor device, making the semiconductor device flat or flat.

[0035] The plating tool 112 is a semiconductor processing tool capable of plating a substrate (e.g., a wafer, a semiconductor device, etc.) or a portion thereof with one or more metals. For example, the plating tool 112 may include a copper plating device, an aluminum plating device, a nickel plating device, a tin plating device, a compound material or alloy (e.g., tin-silver, tin-lead, etc.) plating device, and / or a plating device for one or more other types of conductive materials, metals, and / or similar types of materials.

[0036] The ion implantation tool 114 is a semiconductor processing tool capable of implanting ions into a substrate. The ion implantation tool 114 can generate ions from a source material such as a gas or a solid in an arc chamber. The source material can be provided to the arc chamber, and an arc voltage is discharged between a cathode and an electrode to generate a plasma containing ions of the source material. One or more extraction electrodes can be used to extract ions from the plasma in the arc chamber and accelerate the ions to form an ion beam. The ion beam can be directed to the substrate so that the ions are implanted below the surface of the substrate.

[0037] The wafer / die transporter 116 may be included in a cluster tool or another type of tool that includes multiple processing chambers, and may be configured to transport substrates and / or semiconductor devices between multiple processing chambers, configured to transport substrates and / or semiconductor devices between a processing chamber and a buffer, configured to transport substrates and / or semiconductor devices between a processing chamber and an interface tool such as an equipment front end module (EFEM), and / or configured to transport substrates and / or semiconductor devices between a processing chamber and a transport carrier (e.g., a front opening unified box (FOUP)), among other examples. In some embodiments, the wafer / die transporter 116 may be included in a multi-chamber (or cluster) deposition tool 102, which may include a pre-cleaning process chamber (e.g., for cleaning or removing oxides, oxidation, and / or other types of contaminants or byproducts from substrates and / or semiconductor devices) and multiple types of deposition process chambers (e.g., process chambers for depositing different types of materials, process chambers for performing different types of deposition operations).

[0038] In some embodiments, one or more of the semiconductor processing tools 102-114 can implement one or more semiconductor processing operations described herein. For example, one or more of the semiconductor processing tools 102-114 can be used to form a dielectric layer of a semiconductor photonic device; can be used to form a first optical coupler layer of a multilayer optical coupler in the dielectric layer; and / or can be used to form a second optical coupler layer of a multilayer optical coupler adjacent to the first optical coupler layer in the dielectric layer, among other examples. One or more of the semiconductor processing tools 102-114 can implement other semiconductor processing operations described herein, such as in conjunction with FIG. 4A to FIG. 4E , 7A to 7E and / or Fig.18, among other examples.

[0039] Figure 1 The number and arrangement of the devices shown in the figure are provided as one or more examples. In practice, there may be more than Figure 1 Additional devices, fewer devices, different devices, or differently arranged devices than those shown in . In addition, Figure 1 Two or more of the devices shown in FIG. 1 may be implemented in a single device, or Figure 1 A single device shown in the example environment 100 may be implemented as multiple, distributed devices. Additionally or alternatively, a device group (eg, one or more devices) of the example environment 100 may implement one or more functions described as being implemented by another device group of the example environment 100.

[0040] FIG. 2A to FIG. 2D is a diagram of an exemplary semiconductor photonic device 200 described herein. The semiconductor photonic device 200 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 200 may be configured to provide an optical signal between an optical signal input / output (I / O) (e.g., an optical fiber) and a photonic integrated circuit (PIC) for high bandwidth optical communication.

[0041] Figure 2A is a top view of the xy plane of the semiconductor photonic device 200. Figure 2A As shown in , the semiconductor photonic device 200 includes a multilayer coupler structure 202. The multilayer coupler structure 202 is optically coupled to an optical signal I / O 204, such as an optical fiber or an optical fiber cable. The multilayer coupler structure 202 can be configured to provide an optical signal between the optical signal I / O 204 and another structure of the semiconductor photonic device 200, such as a PIC (not shown). For example, the multilayer coupler structure 202 can receive an optical signal from the optical signal I / O 204 and provide the optical signal to the PIC. As another example, the multilayer coupler structure 202 can receive an optical signal from the PIC and provide the optical signal to the optical signal I / O 204.

[0042] The multilayer coupler structure 202 may be included in a dielectric layer 206 of the semiconductor photonic device 200. The dielectric layer 206 may include one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y ), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0043] The multilayer coupler structure 202 includes a plurality of optical coupler layers, such as an optical coupler layer 208 and an optical coupler layer 210. The optical coupler layers 208 and 210 may each include a waveguide structure that enables optical signals to be transferred between and through the optical coupler layers 208 and 210. The optical coupler layer 208 is adjacent to the optical coupler layer 210 in the dielectric layer 206. In some embodiments, the optical coupler layers 208 and 210 are vertically adjacent in the semiconductor photonic device 200 because the optical coupler layers 208 and 210 are arranged in a direction approximately perpendicular to the top surface of the dielectric layer 206. For example, the optical coupler layer 208 may be located above the optical coupler layer 210. In some embodiments, the optical coupler layers 208 and 210 are horizontally adjacent in the semiconductor photonic device 200 because the optical coupler layers 208 and 210 are located side by side in the y-direction in the semiconductor photonic device 200.

[0044] Including multiple optical coupler layers in the multilayer coupler structure 202 enables one or more characteristics of the optical coupler layers 208 and / or 210 to be configured to achieve efficient optical coupling of a broad spectrum of optical wavelengths for the multilayer coupler structure 202. For example, the material, refractive index, shape, size, positioning of the optical coupler layers 208 and / or 210 can be selected to achieve a large number of confinements for optical signals of a specific optical frequency and / or multiple optical frequencies. This enables the advantages of the optical coupler layers 208 and / or 210 to be emphasized while ensuring compatibility between the optical coupler layers 208 and 210, which can reduce optical losses and increase optical efficiency for the multilayer coupler structure 202 without excessively increasing the size of the multilayer coupler structure 202. This enables the multilayer coupler structure 202 to process wide bandwidth optical signals, which enables the semiconductor photonic device 200 to support high bandwidth optical communication applications while achieving a small form factor for the semiconductor photonic device 200.

[0045] As an example above, and as Figure 2A, the optical coupler layers 208 and 210 have different top view profiles. The optical coupler layer 208 has a segment 208a and a segment 208b. The top view width of the segment 208a (e.g., in the y-direction) increases from a first end of the optical coupler layer 208 facing the optical signal I / O 204 to a midpoint 212 along the optical coupler layer 208 in the x-direction. The top view width of the segment 208b (e.g., in the y-direction) decreases from a midpoint 212 along the optical coupler layer 208 in the x-direction to a second end of the optical coupler layer 208 opposite the first end. Therefore, the segments 208a and 208b are tapered segments in the top view of the semiconductor photonic device 200, wherein the segments 208a and 208b have tapered sidewalls that are substantially straight (or linear). Midpoint 212 is the location along optical coupler layer 208 where the taper of optical coupler layer 208 transitions between segment 208a and segment 208b.

[0046] The optical coupler layer 210 has a segment 210a and a segment 210b. The top view width of the segment 210a (e.g., in the y-direction) increases from the first end of the optical coupler layer 210 facing the optical signal I / O 204 to the midpoint 212 along the optical coupler layer 210 in the x-direction. The first ends and the midpoint 212 of the optical coupler layers 208 and 210 can be substantially aligned. Therefore, the segments 208a and 210a have approximately the same x-direction length. The segment 210b of the optical coupler layer 210 has a larger x-direction length than the segment 208b of the optical coupler layer 208. Therefore, the segment 210b of the optical coupler layer 210 extends laterally outward from the segment 208b of the optical coupler layer 208 in the x-direction.

[0047] The top view width (e.g., in the y-direction) of segment 210b is substantially uniform between a midpoint 212 along the optical coupler layer 210 in the x-direction and a second end of the optical coupler layer 210 opposite the first end. The top view width of the optical coupler layer 208 at the midpoint 212 is greater than the top view width of the optical coupler layer 210 at the midpoint 212, which enables the optical signal to be confined in the optical coupler layer 208 with low optical loss before the optical signal is transferred to the optical coupler layer 210. The reduced top view width of the optical coupler layer 208 along segment 208b and / or the greater x-direction length of segment 210b facilitates the transfer of the optical signal from the optical coupler layer 208 to the optical coupler layer 210.

[0048] As another example, optical coupler layers 208 and 210 can be formed of different material compositions. The material compositions of optical coupler layers 208 and 210 can be selected such that the respective refractive indices of optical coupler layers 208 and 210 promote compatibility of optical coupler layers 208 and 210 for optical coupling purposes. For example, the material composition of optical coupler layer 208 can be selected such that optical coupler layer 208 has a first refractive index, and the material composition of optical coupler layer 210 can be selected such that optical coupler layer 210 has a second refractive index greater than the first refractive index, which enables optical signals to be transferred from optical coupler layer 208 to optical coupler layer 210 with low optical loss.

[0049] The material composition of the optical coupler layer 208 may include one or more dielectric materials having a low refractive index, and the material composition of the optical coupler layer 210 may include one or more semiconductor materials having a refractive index greater than the material composition of the optical coupler layer 208. As used herein, the term "low refractive index" refers to a refractive index that is less than the refractive index of silicon (Si) (e.g., less than about 3.5). Examples of dielectric materials for the optical coupler layer 208 include silicon nitride materials (Si x N y , such as Si3N4), aluminum oxide materials (Al x O y , such as Al2O3), aluminum nitride materials (AlN), hafnium oxide materials (HfO x , such as HfO2), titanium oxide materials (TiO x , such as TiO2), zinc oxide materials (ZnO) and / or germanium oxide materials (GeO x , such as GeO 2 ), among other examples. Examples of semiconductor materials for the optical coupler layer 210 include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0050] Figure 2B The semiconductor photonic device 200 is shown in FIG. Figure 2A The line AA in FIG. 1 passes through the center of the optical coupler layers 208 and 210. Figure 2B As shown in , the semiconductor photonic device 200 may also include a semiconductor substrate 214, and the dielectric layer 206 is located on the semiconductor substrate 214. The semiconductor substrate 214 may include a silicon (Si) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. The optical coupler layers 208 and 210 are arranged in the semiconductor photonic device 200 in the z direction, and the z direction is approximately perpendicular to the surface of the semiconductor substrate 214. For example, the optical coupler layer 208 is located on the optical coupler layer 210. Optionally, the optical coupler layers 208 and 210 can be arranged so that the optical coupler layers 208 and 210 are adjacent in the y direction.

[0051] like Figure 2B As further shown in FIG. 1 , the optical coupler layer 208 can have a dimension D1 and a dimension D2, and the optical coupler layer 210 can have a dimension D3 and a dimension D4. The dimension D1 corresponds to the x-direction length of the segment 208a of the optical coupler layer 208, and the dimension D2 corresponds to the x-direction length of the segment 208b of the optical coupler layer 208. In some embodiments, the dimension D1 is greater than the dimension D2 to facilitate optical coupling of optical signals from the optical coupler layer 208 to the optical coupler layer 210. The dimension D4 can also be greater than the dimension D2 to facilitate optical coupling of optical signals from the optical coupler layer 208 to the optical coupler layer 210.

[0052] Figure 2C The semiconductor photonic device 200 is shown in FIG. Figure 2A The line BB in FIG. 1 passes through the cross-sectional view of the optical coupler layers 208 and 210 at the midpoint 212. Figure 2C As shown in FIG, optical coupler layer 208 extends laterally outward from optical coupler layer 210 on opposite sides of optical coupler layer 210 in the y-direction by dimension D5 and dimension D6. In some embodiments, dimension D5 and dimension D6 are approximately equal distances, while in other embodiments, dimension D5 and dimension D6 are different distances. Figure 2C The y-direction width of the optical coupler layer 208 at the midpoint 212 (indicated as dimension D7 in FIG. Figure 2C The optical coupler layer 208 extends laterally (represented as dimension D8 in FIG. 2 ).

[0053] like Figure 2C As further shown in , the optical coupler layer 210 can have a dimension D9 corresponding to the z-direction thickness of the optical coupler layer 210. The optical coupler layer 208 can have a dimension D10 corresponding to the z-direction thickness of the optical coupler layer 208. Dimension D10 can be greater than dimension D9. For example, the ratio of dimension D10 to dimension D9 can be greater than approximately 1:1 and less than or approximately equal to approximately 100:1. However, other values ​​for the ratio of dimension D10 to dimension D9 are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D9 is included in the range from approximately 0.01 microns to approximately 0.8 microns. However, other values ​​for this range are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D10 is included in the range from approximately 0.01 microns to approximately 1 micron. However, other values ​​for this range are within the scope of the embodiments of the present disclosure.

[0054] like Figure 2CAs further shown in FIG. 1 , the optical coupler layers 208 and 210 are separated by the dielectric layer 206 so that the optical coupler layers 208 and 210 are not in direct contact with each other. Figure 2C Dimension D11 (denoted as dimension D11 in FIG. 1 ) may be included in a range of about 0.02 microns to about 5 microns to minimize damage to optical coupler layer 210 during formation of optical coupler layer 208 while providing sufficient spacing between optical coupler layers 208 and 210 to facilitate optical coupling between optical coupler layers 208 and 210. If dimension D11 is less than about 0.02 microns, optical coupler layer 208 may be damaged due to etching of dielectric layer 206 during formation of optical coupler layer 210. If dimension D11 is greater than about 5 microns, optical signals may experience significant optical losses between optical coupler layers 208 and 210. However, other values ​​for dimension D11 and ranges other than about 0.02 microns to about 5 microns are within the scope of the disclosed embodiments.

[0055] Figure 2D A top view of the optical coupler layers 208 and 210 is shown. Figure 2D As shown in FIG. 1 , the top view width (e.g., in the y-direction) of segment 210a increases from a first end of the optical coupler layer 210 facing the optical signal I / O 204 to a midpoint 212 along the optical coupler layer 210 in the x-direction. Thus, the top view width (e.g., in the y-direction) of segment 210a at the first end increases from a first end of the optical coupler layer 210 facing the optical signal I / O 204 to a midpoint 212 along the optical coupler layer 210 in the x-direction. Figure 2D 210a at the midpoint 212 (indicated as dimension D12 in FIG. Figure 2B The top view width of segment 210b (e.g., in the y-direction) is substantially uniform between midpoint 212 along optical coupler layer 210 in the x-direction and the second end of optical coupler layer 210. Thus, the top view width of segment 210b at the second end (e.g., in the y-direction) is substantially uniform between midpoint 212 along optical coupler layer 210 in the x-direction and the second end of optical coupler layer 210. Figure 2D 210a at midpoint 212 (indicated as dimension D13 in FIG. Figure 2B Dimension D7).

[0056] like Figure 2D As further shown in FIG. 1 , the top view width (e.g., in the y-direction) of segment 208a increases from the first end of the optical coupler layer 208 facing the optical signal I / O 204 to a midpoint 212 along the optical coupler layer 208 in the x-direction. Thus, the top view width of segment 208a at the first end (e.g., in the y-direction) increases. Figure 2D 208a at the midpoint 212 (indicated as dimension D14 in FIG. Figure 2BThe top view width of segment 208b (e.g., in the y-direction) decreases from a midpoint 212 along the optical coupler layer 208 in the x-direction to a second end of the optical coupler layer 208 opposite the first end. Thus, the top view width of segment 208b at the second end (in the x-direction) decreases from a midpoint 212 along the optical coupler layer 208 in the x-direction to a second end of the optical coupler layer 208 opposite the first end. Figure 2D 208b) is smaller than the top view width of segment 208b at midpoint 212 (indicated as dimension D15 in FIG. Figure 2B Dimension D8).

[0057] The width (D12) of the first end of the optical coupler layer 210 and the width (D14) of the first end of the optical coupler layer 208 can be approximately equal. The width (D13) of the second end of the optical coupler layer 210 can be greater than the width (D15) of the second end of the optical coupler layer 208 to facilitate optical coupling of optical signals from the optical coupler layer 208 to the optical coupler layer 210.

[0058] As shown above, provide FIG. 2A to FIG. 2D As an example. Other examples can be related to FIG. 2A to FIG. 2D The content described is different.

[0059] Figure 3 is a diagram of an exemplary embodiment 300 of optical coupling in a semiconductor photonic device 200 as described herein. Figure 3 , an optical signal path 302 of an optical signal may begin at an optical signal I / O 204. The optical signal may propagate along the optical signal path 302 from the optical signal I / O 204 to a segment 208a of the optical coupler layer 208. Thus, the optical coupler layer 208 is optically coupled to the optical signal I / O 204. The optical signal may propagate along the segment 208a to the intermediate point 212, and may then transfer (e.g., downward) to a segment 210b of the optical coupler layer 210. Thus, the optical coupler layer 210 is optically coupled to the optical coupler layer 208. The optical signal may transfer from the segment 210b of the optical coupler layer 210 to a PIC (not shown) and / or to another location in the semiconductor photonic device 200.

[0060] As shown above, provide Figure 3 As an example. Other examples can be related to Figure 3 The content described is different.

[0061] FIG. 4A to FIG. 4E is a diagram of an exemplary embodiment 400 of forming a semiconductor photonic device 200 described herein. In some embodiments, in combination FIG. 4A to FIG. 4E One or more of the described semiconductor processing operations may be performed using one or more of the semiconductor processing tools 102-114 described herein. FIG. 4A to FIG. 4E One or more of the described semiconductor processing operations may be performed using another semiconductor processing tool.

[0062] Go to Figure 4A , a substrate 402 may be provided. The substrate 402 may include: a silicon-on-insulator (SOI) substrate (or SOI wafer), which includes a semiconductor substrate 214 (e.g., a silicon (Si) substrate and / or another type of semiconductor substrate), a portion of the dielectric layer 206 located above and / or on the semiconductor substrate 214 (e.g., a buried oxide or bottom oxide (BOX) layer and / or another type of insulating layer), and a semiconductor layer 404 (e.g., a silicon (Si) layer and / or another type of semiconductor layer) above and / or on a portion of the dielectric layer 206.

[0063] Alternatively, semiconductor substrate 214 may be provided as a semiconductor wafer, and deposition tool 102 may be used to form a portion of dielectric layer 206 over and / or on semiconductor substrate 214, and semiconductor layer 404 may be formed over and / or on a portion of dielectric layer 206. Deposition tool 102 may be used to form a portion of dielectric layer 206 using a CVD technique, a PVD technique, an oxidation technique (e.g., a thermal oxidation technique), and / or another type of deposition technique. Deposition tool 102 may be used to form semiconductor layer 404 using a CVD technique, a PVD technique, an epitaxy technique, and / or another type of deposition technique.

[0064] like Figure 4B , the optical coupler layer 210 can be formed in the semiconductor layer 404. In some embodiments, the pattern in the hard mask layer is used to etch the semiconductor layer 404 to form the optical coupler layer 210. For example, the deposition tool 102 can be used to form a hard mask layer on the semiconductor layer 404 (e.g., using a CVD technique, a PVD technique, and / or another type of deposition technique), and can be used to form a photoresist layer on the hard mask layer (e.g., using a spin coating technique and / or another type of deposition technique). The exposure tool 104 can be used to expose the photoresist layer to a radiation source to form a pattern of the photoresist layer. The development tool 106 can be used to develop and remove portions of the photoresist layer to expose the pattern. The etching tool 108 can be used to etch the hard mask layer to transfer the pattern from the photoresist layer to the hard mask layer.

[0065] The etching tool 108 can be used to etch the semiconductor layer 404 based on the pattern in the hard mask layer to form the optical coupler layer 210 by removing portions of the semiconductor layer 404 based on the pattern. In some embodiments, the etching operation includes a plasma etching operation, a wet chemical etching operation, and / or another type of etching operation. In some embodiments, the photoresist removal tool removes the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, the photoresist removal tool removes the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, the planarization tool 110 is used to remove the remaining portion of the hard mask layer using a CMP technique and / or another type of planarization technique.

[0066] like Figure 4C As shown in FIG. 1 , additional material for dielectric layer 206 may be deposited to seal optical coupler layer 210. Deposition tool 102 may be used to deposit additional material for dielectric layer 206 using a CVD technique, a PVD technique, an oxidation technique (e.g., a thermal oxidation technique), and / or another type of deposition technique. In some embodiments, after depositing the additional material for dielectric layer 206, planarization tool 110 is used to planarize dielectric layer 206.

[0067] like Figure 4D As shown in , the optical coupler layer 208 is formed in the dielectric layer 206. The optical coupler layer 208 can be formed on the optical coupler layer 210. The optical coupler layer 208 can be formed in the groove of the dielectric layer 206. In some embodiments, the pattern in the photoresist layer is used to etch the dielectric layer 206 to form the groove. In these embodiments, the deposition tool 102 can be used to form a photoresist layer on the dielectric layer 206. The exposure tool 104 can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. The development tool 106 can be used to develop and remove portions of the photoresist layer to expose the pattern. The etching tool 108 can be used to etch the dielectric layer 206 based on the pattern to form a groove in the dielectric layer 206. In some embodiments, the etching operation includes a plasma etching operation, a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique for pattern-based etching of the dielectric layer 206 .

[0068] The deposition tool 102 can be used to deposit the optical coupler layer 208 in the recess using a CVD technique, a PVD technique, an oxidation technique (e.g., a thermal oxidation technique), and / or another type of deposition technique. In some embodiments, after depositing the optical coupler layer 208, a planarization tool 110 is used to planarize the optical coupler layer 208 and / or the dielectric layer 206.

[0069] like Figure 4E As shown in FIG. 1 , additional material for dielectric layer 206 may be deposited to seal optical coupler layer 208. Deposition tool 102 may be used to deposit the additional material for dielectric layer 206 using a CVD technique, a PVD technique, an oxidation technique (e.g., a thermal oxidation technique), and / or another type of deposition technique. In some embodiments, after depositing the additional material for dielectric layer 206, planarization tool 110 is used to planarize dielectric layer 206.

[0070] As shown above, provide FIG. 4A to FIG. 4E As an example. Other examples can be related to FIG. 4A to FIG. 4E The content described is different.

[0071] FIG. 5A to FIG. 5D is a diagram of an exemplary semiconductor photonic device 500 described herein. The semiconductor photonic device 500 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 500 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0072] Figure 5A is a top view of the xy plane of the semiconductor photonic device 500. Figure 5A As shown in , the semiconductor photonic device 500 includes a multilayer coupler structure 502. The multilayer coupler structure 502 is optically coupled to an optical signal I / O 504. The multilayer coupler structure 502 can be configured to provide an optical signal between the optical signal I / O 504 and another structure of the semiconductor photonic device 500, such as a PIC (not shown). For example, the multilayer coupler structure 502 can receive an optical signal from the optical signal I / O 504 and provide the optical signal to the PIC. As another example, the multilayer coupler structure 502 can receive an optical signal from the PIC and provide the optical signal to the optical signal I / O 504.

[0073] The multilayer coupler structure 502 may be included in a dielectric layer 506 of the semiconductor photonic device 500. The dielectric layer 506 may include one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0074] The multilayer coupler structure 502 includes a plurality of optical coupler layers, such as an optical coupler layer 508 and an optical coupler layer 510. The optical coupler layers 508 and 510 may each include a waveguide structure that enables optical signals to be transferred between and through the optical coupler layers 508 and 510. The optical coupler layer 508 is adjacent to the optical coupler layer 510 in the dielectric layer 506. In some embodiments, the optical coupler layers 508 and 510 are vertically adjacent in the semiconductor photonic device 500 because the optical coupler layers 508 and 510 are arranged in a direction approximately perpendicular to the top surface of the dielectric layer 506. For example, the optical coupler layer 510 may be located above the optical coupler layer 508. In some embodiments, the optical coupler layers 508 and 510 are horizontally adjacent in the semiconductor photonic device 500 because the optical coupler layers 508 and 510 are located side by side in the y-direction in the semiconductor photonic device 500.

[0075] like Figure 5A , the optical coupler layers 508 and 510 have different top view profiles. The optical coupler layer 508 has a segment 508a and a segment 508b. The top view width of the segment 508a (e.g., in the y direction) increases from the first end of the optical coupler layer 508 facing the optical signal I / O 504 to the midpoint 512 along the optical coupler layer 508 in the x direction. The top view width of the segment 508b (e.g., in the y direction) decreases from the midpoint 512 along the optical coupler layer 508 in the x direction to the second end of the optical coupler layer 508 opposite the first end. Therefore, the segments 508a and 508b are tapered segments in the top view of the semiconductor photonic device 500, wherein the segments 508a and 508b have tapered sidewalls that are substantially straight. The midpoint 512 is a position along the optical coupler layer 508 at which the taper of the optical coupler layer 508 transitions between the segment 508a and the segment 508b.

[0076] The optical coupler layer 510 has a segment 510a and a segment 510b. The top view width of the segment 510a (e.g., in the y-direction) increases from the first end of the optical coupler layer 510 facing the optical signal I / O 504 to the midpoint 512 along the optical coupler layer 510 in the x-direction. The first ends and the midpoint 512 of the optical coupler layers 508 and 510 can be substantially aligned. Therefore, the segments 508a and 510a have approximately the same x-direction length. The segment 510b of the optical coupler layer 510 has a larger x-direction length than the segment 508b of the optical coupler layer 508. Therefore, the segment 510b of the optical coupler layer 510 extends laterally outward from the segment 508b of the optical coupler layer 508 in the x-direction.

[0077] The top view width of segment 510b (e.g., in the y-direction) is substantially uniform between a midpoint 512 along the optical coupler layer 510 in the x-direction and a second end of the optical coupler layer 510 opposite the first end. The top view width of the optical coupler layer 510 at the midpoint 512 is greater than the top view width of the optical coupler layer 508 at the midpoint 512. The reduced top view width of the optical coupler layer 508 along segment 508b and / or the greater x-direction length of segment 510b facilitates the transfer of optical signals from the optical coupler layer 508 to the optical coupler layer 510.

[0078] Additionally and / or alternatively, optical coupler layers 508 and 510 can be formed of different material compositions for different top view profiles. The material compositions of optical coupler layers 508 and 510 can be selected such that the respective refractive indices of optical coupler layers 508 and 510 promote compatibility of optical coupler layers 508 and 510 for optical coupling purposes. For example, the material composition of optical coupler layer 508 can be selected such that optical coupler layer 508 has a first refractive index, and the material composition of optical coupler layer 510 can be selected such that optical coupler layer 510 has a second refractive index that is less than the first refractive index. The combination of the lower refractive index in the y-direction of optical coupler layer 508 and the smaller top view width enables optical signals to be transferred from optical coupler layer 508 to optical coupler layer 510 with low optical loss.

[0079] The material composition of the optical coupler layer 508 may include one or more semiconductor materials having a greater refractive index than the material composition of the optical coupler layer 510, and the material composition of the optical coupler layer 510 may include one or more dielectric materials having a lower refractive index. Examples of dielectric materials for the optical coupler layer 510 include silicon nitride materials (Si x N y , such as Si3N4), aluminum oxide materials (Al x O y , such as Al2O3), aluminum nitride materials (AlN), hafnium oxide materials (HfO x, such as HfO2), titanium oxide materials (TiO x , such as TiO2), zinc oxide materials (ZnO) and / or germanium oxide materials (GeO x , such as GeO 2 ), among other examples. Examples of semiconductor materials for optical coupler layer 508 include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0080] Figure 5B The semiconductor photonic device 500 is shown in FIG. Figure 5A The line CC in FIG. 5 passes through the center of the optical coupler layers 508 and 510. Figure 5B As shown in , the semiconductor photonic device 500 may also include a semiconductor substrate 514, and the dielectric layer 506 is located on the semiconductor substrate 514. The semiconductor substrate 514 may include a semiconductor substrate, such as a silicon (Si) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. Optical coupler layers 508 and 510 are arranged in the semiconductor photonic device 500 in the z direction, and the z direction is approximately perpendicular to the surface of the semiconductor substrate 514. For example, the optical coupler layer 510 is located on the optical coupler layer 508. Optionally, the optical coupler layers 508 and 510 can be arranged so that the optical coupler layers 508 and 510 are adjacent in the y direction.

[0081] like Figure 5B As further shown in FIG. 5 , optical coupler layer 508 can have dimension D16 and dimension D17, and optical coupler layer 510 can have dimension D18 and dimension D19. Dimension D16 corresponds to the x-direction length of segment 508a of optical coupler layer 508, and dimension D17 corresponds to the x-direction length of segment 508b of optical coupler layer 508. In some embodiments, dimension D16 is greater than dimension D17 to facilitate optical coupling of optical signals from optical coupler layer 508 to optical coupler layer 510. Dimension D19 can also be greater than dimension D17 to facilitate optical coupling of optical signals from optical coupler layer 508 to optical coupler layer 510.

[0082] Figure 5C The semiconductor photonic device 500 is shown in FIG. Figure 5A The line DD in FIG. 5 passes through the cross-sectional view of the optical coupler layers 508 and 510 at the midpoint 512. Figure 5C As shown in , optical coupler layer 510 extends laterally outward from optical coupler layer 508 on opposite sides of optical coupler layer 508 in the y-direction by dimension D20 and dimension D21. In some embodiments, dimension D20 and dimension D21 are approximately equal distances, while in other embodiments, dimension D20 and dimension D21 are different distances. Figure 5CThe y-direction width of the optical coupler layer 510 at the midpoint 512 (indicated as dimension D22 in FIG. Figure 5C The optical coupler layer 510 is laterally extended (represented as dimension D23).

[0083] like Figure 5C As further shown in , the optical coupler layer 510 can have a dimension D24 corresponding to the z-direction thickness of the optical coupler layer 510. The optical coupler layer 508 can have a dimension D25 corresponding to the z-direction thickness of the optical coupler layer 508. Dimension D24 can be greater than dimension D25. For example, the ratio of dimension D24 to dimension D25 can be greater than approximately 1:1 and less than or approximately equal to approximately 100:1. However, other values ​​of the ratio of dimension D24 to dimension D25 are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D24 is included in the range from approximately 0.01 microns to approximately 0.8 microns. However, other values ​​for this range are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D25 is included in the range from approximately 0.01 microns to approximately 1 micron. However, other values ​​for this range are within the scope of the embodiments of the present disclosure.

[0084] like Figure 5C As further shown in FIG. 5 , the optical coupler layers 508 and 510 are separated by the dielectric layer 506 so that the optical coupler layers 508 and 510 are not in direct contact with each other. Figure 5C Dimension D26 (denoted as dimension D26 in FIG. 1 ) may be included in a range of about 0.02 microns to about 5 microns to minimize damage to optical coupler layer 510 during formation of optical coupler layer 508 while providing sufficient spacing between optical coupler layers 508 and 510 to facilitate optical coupling between optical coupler layers 508 and 510. If dimension D26 is less than about 0.02 microns, optical coupler layer 508 may be damaged due to etching of dielectric layer 506 during formation of optical coupler layer 510. If dimension D26 is greater than about 5 microns, optical signals may experience significant optical losses between optical coupler layers 508 and 510. However, other values ​​for dimension D26 and ranges other than about 0.02 microns to about 5 microns are within the scope of the disclosed embodiments.

[0085] Figure 5D A top view of optical coupler layers 508 and 510 is shown. Figure 5D As shown in FIG. 5 , the top view width (e.g., in the y-direction) of segment 510a increases from a first end of the optical coupler layer 510 facing the optical signal I / O 504 to a midpoint 512 along the optical coupler layer 510 in the x-direction. Thus, the top view width (e.g., in the y-direction) of segment 510a at the first end increases. Figure 5D510a at the midpoint 512 (indicated as dimension D26 in FIG. Figure 5B The top view width of segment 510b (e.g., in the y-direction) is substantially uniform between midpoint 512 along optical coupler layer 510 in the x-direction and the second end of optical coupler layer 510. Thus, the top view width of segment 510b at the second end (e.g., in the y-direction) is substantially uniform between midpoint 512 along optical coupler layer 510 in the x-direction and the second end of optical coupler layer 510. Figure 5D 510a at the midpoint 512 (indicated as dimension D27 in FIG. Figure 5B Dimension D22).

[0086] like Figure 5D As further shown in FIG. 5 , the top view width (e.g., in the y-direction) of segment 508a increases from the first end of the optical coupler layer 508 facing the optical signal I / O 504 to a midpoint 512 along the optical coupler layer 508 in the x-direction. Thus, the top view width (e.g., in the y-direction) of segment 508a at the first end increases. Figure 5D 508a at the midpoint 512 (indicated as dimension D28 in FIG. Figure 5B The top view width of segment 508b (e.g., in the y-direction) decreases from a midpoint 512 along the optical coupler layer 508 in the x-direction to a second end of the optical coupler layer 508 opposite the first end. Thus, the top view width of segment 508b at the second end (in the x-direction) decreases from a midpoint 512 along the optical coupler layer 508 in the x-direction to a second end of the optical coupler layer 508 opposite the first end. Figure 5D 508b) is smaller than the top view width of segment 508b at midpoint 512 (in FIG. Figure 5B Dimension D23).

[0087] The width (D26) of the first end of the optical coupler layer 510 and the width (D28) of the first end of the optical coupler layer 508 can be approximately equal. The width (D27) of the second end of the optical coupler layer 510 can be greater than the width (D29) of the second end of the optical coupler layer 508 to facilitate optical coupling of optical signals from the optical coupler layer 508 to the optical coupler layer 510.

[0088] As shown above, provide FIG. 5A to FIG. 5D As an example. Other examples can be related to FIG. 5A to FIG. 5D The content described is different.

[0089] Figure 6 is a diagram of an exemplary embodiment 600 of optical coupling in a semiconductor photonic device 500 as described herein. Figure 6, an optical signal path 602 of an optical signal may begin at an optical signal I / O 504. The optical signal may propagate along the optical signal path 602 from the optical signal I / O 504 to a segment 508a of an optical coupler layer 508. Thus, the optical coupler layer 508 is optically coupled to the optical signal I / O 504. The optical signal may propagate along the segment 508a to an intermediate point 512, and may then transfer (e.g., upward) to a segment 510b of an optical coupler layer 510. Thus, the optical coupler layer 510 is optically coupled to the optical coupler layer 508. The optical signal may transfer from the portion 510b of the optical coupler layer 510 to a PIC (not shown) and / or to another location in the semiconductor photonic device 500.

[0090] As shown above, provide Figure 6 As an example. Other examples can be related to Figure 6 The content described is different.

[0091] 7A to 7E is a diagram of an exemplary embodiment 700 of forming a semiconductor photonic device 500 described herein. In some embodiments, in combination 7A to 7E One or more of the described semiconductor processing operations may be performed using one or more of the semiconductor processing tools 102-114 described herein. 7A to 7E One or more of the described semiconductor processing operations may be performed using another semiconductor processing tool.

[0092] Go to Fig. 7A , a substrate 702 may be provided. The substrate 702 may include: an SOI substrate (or SOI wafer), which includes a semiconductor substrate 514 (e.g., a silicon (Si) substrate and / or another type of semiconductor substrate), a portion of a dielectric layer 506 located above and / or on the semiconductor substrate 514 (e.g., a BOX layer and / or another type of insulating layer), and a semiconductor layer 704 (e.g., a silicon (Si) layer and / or another type of semiconductor layer) above and / or on a portion of the dielectric layer 506.

[0093] Alternatively, semiconductor substrate 514 may be provided as a semiconductor wafer, and deposition tool 102 may be used to form a portion of dielectric layer 506 over and / or on semiconductor substrate 514, and semiconductor layer 704 may be formed over and / or on a portion of dielectric layer 506. Deposition tool 102 may be used to form a portion of dielectric layer 506 using a CVD technique, a PVD technique, an oxidation technique (e.g., a thermal oxidation technique), and / or another type of deposition technique. Deposition tool 102 may be used to form semiconductor layer 704 using a CVD technique, a PVD technique, an epitaxy technique, and / or another type of deposition technique.

[0094] like Figure 7B, an optical coupler layer 508 can be formed in the semiconductor layer 704. In some embodiments, the pattern in the hard mask layer is used to etch the semiconductor layer 704 to form the optical coupler layer 508. For example, the deposition tool 102 can be used to form a hard mask layer on the semiconductor layer 704 (e.g., using a CVD technique, a PVD technique, and / or another type of deposition technique), and can be used to form a photoresist layer on the hard mask layer (e.g., using a spin coating technique and / or another type of deposition technique). The exposure tool 104 can be used to expose the photoresist layer to a radiation source to form a pattern of the photoresist layer. The development tool 106 can be used to develop and remove portions of the photoresist layer to expose the pattern. The etching tool 108 can be used to etch the hard mask layer to transfer the pattern from the photoresist layer to the hard mask layer.

[0095] The etching tool 108 can be used to etch the semiconductor layer 704 based on the pattern in the hard mask layer to form the optical coupler layer 508 by removing portions of the semiconductor layer 704 based on the pattern. In some embodiments, the etching operation includes a plasma etching operation, a wet chemical etching operation, and / or another type of etching operation. In some embodiments, the photoresist removal tool removes the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, the photoresist removal tool removes the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, the planarization tool 110 is used to remove the remaining portion of the hard mask layer using a CMP technique and / or another type of planarization technique.

[0096] like Figure 7C As shown in FIG. 5 , additional material for dielectric layer 506 can be deposited to seal optical coupler layer 508. Deposition tool 102 can be used to deposit the additional material for dielectric layer 506 using a CVD technique, a PVD technique, an oxidation technique (e.g., a thermal oxidation technique), and / or another type of deposition technique. In some embodiments, after depositing the additional material for dielectric layer 506, planarization tool 110 is used to planarize dielectric layer 506.

[0097] like Fig.7DAs shown in , the optical coupler layer 510 is formed in the dielectric layer 506. The optical coupler layer 510 can be formed on the optical coupler layer 508. The optical coupler layer 510 can be formed in a groove in the dielectric layer 506. In some embodiments, the pattern in the photoresist layer is used to etch the dielectric layer 506 to form the groove. In these embodiments, the deposition tool 102 can be used to form a photoresist layer on the dielectric layer 506. The exposure tool 104 can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. The development tool 106 can be used to develop and remove portions of the photoresist layer to expose the pattern. The etching tool 108 can be used to etch the dielectric layer 506 based on the pattern to form a groove in the dielectric layer 506. In some embodiments, the etching operation includes a plasma etching operation, a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique for pattern-based etching of dielectric layer 506 .

[0098] The deposition tool 102 can be used to deposit the optical coupler layer 510 in the recess using a CVD technique, a PVD technique, an oxidation technique (e.g., a thermal oxidation technique), and / or another type of deposition technique. In some embodiments, after depositing the optical coupler layer 510, the planarization tool 110 is used to planarize the optical coupler layer 510 and / or the dielectric layer 506.

[0099] like Fig. 7E As shown in FIG. 5 , additional material for dielectric layer 506 can be deposited to seal optical coupler layer 510. Deposition tool 102 can be used to deposit the additional material for dielectric layer 506 using a CVD technique, a PVD technique, an oxidation technique (e.g., a thermal oxidation technique), and / or another type of deposition technique. In some embodiments, after depositing the additional material for dielectric layer 506, planarization tool 110 is used to planarize dielectric layer 506.

[0100] As shown above, provide 7A to 7E As an example. Other examples can be related to 7A to 7E The content described is different.

[0101] FIG. 8A to FIG. 8C is a diagram of an exemplary semiconductor photonic device 800 described herein. The semiconductor photonic device 800 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 800 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0102] Fig. 8A is a top view of the xy plane of the semiconductor photonic device 800. Fig. 8A As shown in FIG. 8 , a semiconductor photonic device 800 includes a multilayer coupler structure 802. The multilayer coupler structure 802 is optically coupled to an optical signal I / O 804. The multilayer coupler structure 802 can be configured to provide an optical signal between the optical signal I / O 804 and another structure of the semiconductor photonic device 800, such as a PIC (not shown). For example, the multilayer coupler structure 802 can receive an optical signal from the optical signal I / O 804 and provide the optical signal to the PIC. As another example, the multilayer coupler structure 802 can receive an optical signal from the PIC and provide the optical signal to the optical signal I / O 804.

[0103] The multilayer coupler structure 802 may be included in a dielectric layer 806 of the semiconductor photonic device 800. The dielectric layer 806 may include one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y ), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0104] The multilayer coupler structure 802 includes a plurality of optical coupler layers, such as an optical coupler layer 808 and an optical coupler layer 810. The optical coupler layers 808 and 810 may each include a plurality of waveguides that enable optical signals to be transferred between and through the optical coupler layers 808 and 810. The plurality of waveguides of the optical coupler layer 808 corresponds to segments 808a and 808b as first waveguides, and a plurality of segments 808c as a plurality of second waveguides located on opposite sides of the segment 808a in the y-direction. The plurality of waveguides of the optical coupler layer 810 corresponds to segments 810a and 810b as first waveguides, and a plurality of segments 810c as a plurality of second waveguides located on opposite sides of the segment 810a in the y-direction.

[0105] The optical coupler layer 808 is adjacent to the optical coupler layer 810 in the dielectric layer 806. In some embodiments, the optical coupler layers 808 and 810 are vertically adjacent in the semiconductor photonic device 800 because the optical coupler layers 808 and 810 are arranged in a direction approximately perpendicular to the top surface of the dielectric layer 806. For example, the optical coupler layer 810 can be located above the optical coupler layer 808. In some embodiments, the optical coupler layers 808 and 810 are horizontally adjacent in the semiconductor photonic device 800 because the optical coupler layers 808 and 810 are located side by side in the y-direction in the semiconductor photonic device 800.

[0106] The optical coupler layers 808 and 810 have different top view profiles. The top view width of segment 808a (e.g., in the y-direction) increases from a first end of the optical coupler layer 808 facing the optical signal I / O 804 to a midpoint 812 along the optical coupler layer 808 in the x-direction. Thus, segment 808a is a tapered segment in a top view of the semiconductor photonic device 800, wherein segment 808a has a substantially straight tapered sidewall. The top view width of segment 808b (e.g., in the y-direction) is substantially uniform between a midpoint 812 along the optical coupler layer 808 in the x-direction and a second end of the optical coupler layer 808 opposite the first end. The top view width of segment 808c (e.g., in the y-direction) decreases from a first end of the optical coupler layer 808 facing the optical signal I / O 804 to a midpoint 812 along the optical coupler layer 808 in the x-direction. Thus, segment 808c is a tapered segment in the top view of semiconductor photonic device 800, wherein segment 808c has a substantially straight tapered sidewall. Segments 808a and 808c having different widths along the y-direction enable optical signals to be confined within and / or between segments 808a and 808c. In addition, the tapering of segments 808a and 808c enables optical signals to be focused and combined before the optical signals are transferred to optical coupler layer 810.

[0107] The top view width of segment 810a (e.g., in the y-direction) increases from the first end of the optical coupler layer 810 facing the optical signal I / O 804 to a midpoint 812 along the optical coupler layer 810 in the x-direction. The first ends and midpoint 812 of the optical coupler layers 808 and 810 can be substantially aligned. Thus, segments 808a and 810a have approximately the same x-direction length. Segment 810b of the optical coupler layer 810 has a greater x-direction length than segment 808b of the optical coupler layer 808. Thus, segment 810b of the optical coupler layer 810 extends laterally outward from segment 808b of the optical coupler layer 808 in the x-direction.

[0108] The top view width of segment 810b (e.g., in the y-direction) is substantially uniform between a midpoint 812 along the optical coupler layer 810 in the x-direction and a second end of the optical coupler layer 810 opposite the first end. The top view width of the optical coupler layer 810 at the midpoint 812 is greater than the top view width of the optical coupler layer 808 at the midpoint 812. The reduced top view width of the optical coupler layer 808 along segment 808b and / or the greater x-direction length of segment 810b facilitates the transfer of optical signals from the optical coupler layer 808 to the optical coupler layer 810.

[0109] The top view width of segment 810c (e.g., in the y-direction) decreases from the first end of the optical coupler layer 810 facing the optical signal I / O 804 to the midpoint 812 along the optical coupler layer 810 in the x-direction. Thus, segment 810c is a tapered segment in the top view of the semiconductor photonic device 800, wherein segment 810c has a substantially straight tapered sidewall. Segments 808a and 810c having different widths in the y-direction enable optical signals to be confined within and / or between segments 810a and 810c. In some embodiments, segment 808c and segment 810c have approximately the same x-direction length. In some embodiments, segment 810c has an x-direction length that is greater than the x-direction length of segment 808c.

[0110] Additionally and / or alternatively, optical coupler layers 808 and 810 can be formed of different material compositions for different top view profiles. The material compositions of optical coupler layers 808 and 810 can be selected such that the respective refractive indices of optical coupler layers 808 and 810 promote compatibility of optical coupler layers 808 and 810 for optical coupling purposes. For example, the material composition of optical coupler layer 808 can be selected such that optical coupler layer 808 has a first refractive index, and the material composition of optical coupler layer 810 can be selected such that optical coupler layer 810 has a second refractive index that is less than the first refractive index. The combination of the lower refractive index in the y-direction of optical coupler layer 808 and the smaller top view width enables optical signals to be transferred from optical coupler layer 808 to optical coupler layer 810 with low optical loss.

[0111] The material composition of the optical coupler layer 808 may include one or more semiconductor materials having a greater refractive index than the material composition of the optical coupler layer 810, and the material composition of the optical coupler layer 810 may include one or more dielectric materials having a lower refractive index. Examples of dielectric materials for the optical coupler layer 810 include silicon nitride materials (Si x N y , such as Si3N4), aluminum oxide materials (Al x O y , such as Al2O3), aluminum nitride materials (AlN), hafnium oxide materials (HfO x , such as HfO2), titanium oxide materials (TiO x , such as TiO2), zinc oxide materials (ZnO) and / or germanium oxide materials (GeO x , such as GeO 2 ), among other examples. Examples of semiconductor materials for optical coupler layer 808 include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0112] Figure 8B The semiconductor photonic device 800 is shown in FIG. Fig. 8AThe cross-sectional view of line EE in FIG. 8 passes through the center of the optical coupler layers 808 and 810. Figure 8B As shown in , the semiconductor photonic device 800 may also include a semiconductor substrate 814, and the dielectric layer 806 is located on the semiconductor substrate 814. The semiconductor substrate 814 may include a semiconductor substrate, such as a silicon (Si) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. Optical coupler layers 808 and 810 are arranged in the semiconductor photonic device 800 in the z direction, and the z direction is approximately perpendicular to the surface of the semiconductor substrate 814. For example, the optical coupler layer 810 is located on the optical coupler layer 808. Optionally, the optical coupler layers 808 and 810 can be arranged so that the optical coupler layers 808 and 810 are adjacent in the y direction. The optical coupler layers 808 and 810 are separated by the dielectric layer 806 so that the optical coupler layers 808 and 810 are not in direct contact with each other.

[0113] like Figure 8B As further shown in FIG. 8 , an optical signal path 816 of an optical signal may begin at an optical signal I / O 804. The optical signal may propagate along the optical signal path 816 from the optical signal I / O 804 to segments 808a and 808c of the optical coupler layer 808. Thus, the optical coupler layer 808 is optically coupled to the optical signal I / O 804. The optical signal may propagate along segment 808c to segment 808a, and from segment 808a to an intermediate point 812. The optical signal may then transfer (e.g., upward) to segment 810b of the optical coupler layer 810. Thus, the optical coupler layer 810 is optically coupled to the optical coupler layer 808. The optical signal may transfer from segment 810b of the optical coupler layer 810 to a PIC (not shown) and / or to another location in the semiconductor photonic device 800.

[0114] Figure 8C The semiconductor photonic device 800 is shown in FIG. Fig. 8A FIG. 8 is a cross-sectional view of line FF passing through optical coupler layers 808 and 810 at their first ends. Figure 8C As shown in , the optical coupler layer 808 can have a dimension D30 corresponding to the spacing between the segment 808c and the segment 808a of the optical coupler layer 808. Figure 8C As further shown in FIG. 8 , the optical coupler layer 810 can have a dimension D31 that corresponds to the spacing between segment 810c and segment 810a of the optical coupler layer 810. In some embodiments, dimension D30 and dimension D31 are approximately equal. In some embodiments, dimension D30 and dimension D31 are different spacings.

[0115] like Figure 8CAs further shown in , the optical coupler layer 808 can have a dimension D32 corresponding to the z-direction thickness of the optical coupler layer 808. The optical coupler layer 810 can have a dimension D33 corresponding to the z-direction thickness of the optical coupler layer 810. Dimension D33 can be greater than dimension D32. For example, the ratio of dimension D33 to dimension D32 can be greater than about 1:1 and less than or approximately equal to about 100:1. However, other values ​​for the ratio of dimension D33 to dimension D32 are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D32 is included in the range from about 0.01 microns to about 0.8 microns. However, other values ​​for this range are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D33 is included in the range from about 0.01 microns to about 1 micron. However, other values ​​for this range are within the scope of the embodiments of the present disclosure.

[0116] Combination FIG. 4A to FIG. 4E and / or 7A to 7E Similar semiconductor processing operations and / or techniques described can be used to form semiconductor photonic device 800. For example, optical coupler layer 808 can be formed in the semiconductor layer above dielectric layer 806. Additional material for dielectric layer 806 can be deposited to seal optical coupler layer 808. Optical coupler layer 810 can be formed above optical coupler layer 808 in dielectric layer 806. Additional material for dielectric layer 806 can be deposited to seal optical coupler layer 810.

[0117] As shown above, provide FIG. 8A to FIG. 8C As an example. Other examples can be related to FIG. 8A to FIG. 8C The content described is different.

[0118] 9A to 9C is a diagram of an exemplary semiconductor photonic device 900 described herein. The semiconductor photonic device 900 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 900 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0119] Fig. 9A is a top view of the xy plane of the semiconductor photonic device 900. Fig. 9AAs shown in , the semiconductor photonic device 900 includes a multilayer coupler structure 902. The multilayer coupler structure 902 is optically coupled to an optical signal I / O 904. The multilayer coupler structure 902 can be configured to provide an optical signal between the optical signal I / O 904 and another structure of the semiconductor photonic device 900, such as a PIC (not shown). For example, the multilayer coupler structure 902 can receive an optical signal from the optical signal I / O 904 and provide the optical signal to the PIC. As another example, the multilayer coupler structure 902 can receive an optical signal from the PIC and provide the optical signal to the optical signal I / O 904.

[0120] The multilayer coupler structure 902 may be included in a dielectric layer 906 of the semiconductor photonic device 900. The dielectric layer 906 may include one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y ), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0121] The multilayer coupler structure 902 includes a plurality of optical coupler layers, such as an optical coupler layer 908 and an optical coupler layer 910. The optical coupler layers 908 and 910 may each include a plurality of waveguides that enable optical signals to be transferred between and through the optical coupler layers 908 and 910. The plurality of waveguides of the optical coupler layer 908 corresponds to segments 908a and 908b as first waveguides, and a plurality of segments 908c as a plurality of second waveguides located on opposite sides of the segment 908a in the y-direction. The plurality of waveguides of the optical coupler layer 910 corresponds to segments 910a and 910b as first waveguides, and a plurality of segments 910c as a plurality of second waveguides located on opposite sides of the segment 910a in the y-direction.

[0122] The optical coupler layer 908 is adjacent to the optical coupler layer 910 in the dielectric layer 906. In some embodiments, the optical coupler layers 908 and 910 are vertically adjacent in the semiconductor photonic device 900 because the optical coupler layers 908 and 910 are arranged in a direction approximately perpendicular to the top surface of the dielectric layer 906. For example, the optical coupler layer 908 can be located above the optical coupler layer 910. In some embodiments, the optical coupler layers 908 and 910 are horizontally adjacent in the semiconductor photonic device 900 because the optical coupler layers 908 and 910 are located side by side in the y-direction in the semiconductor photonic device 900.

[0123] The optical coupler layers 908 and 910 have different top view profiles. The top view width of segment 908a (e.g., in the y-direction) increases from a first end of the optical coupler layer 908 facing the optical signal I / O 904 to a midpoint 912 along the optical coupler layer 908 in the x-direction. Thus, segment 908a is a tapered segment in a top view of the semiconductor photonic device 900, wherein segment 908a has a substantially straight tapered sidewall. The top view width of segment 908b (e.g., in the y-direction) is substantially uniform between the midpoint 912 along the optical coupler layer 908 in the x-direction and a second end of the optical coupler layer 908 opposite the first end. The top view width of segment 908c (e.g., in the y-direction) decreases from a first end of the optical coupler layer 908 facing the optical signal I / O 904 to a midpoint 912 along the optical coupler layer 908 in the x-direction. Thus, segment 908c is a tapered segment in the top view of semiconductor photonic device 900, wherein segment 908c has a substantially straight tapered sidewall. Segments 908a and 908c having different widths along the y-direction enable optical signals to be confined within and / or between segments 908a and 908c. In addition, the tapering of segments 908a and 908c enables optical signals to be focused and combined before the optical signals are transferred to optical coupler layer 910.

[0124] The top view width of segment 910a (e.g., in the y-direction) increases from a first end of the optical coupler layer 910 facing the optical signal I / O 904 to a midpoint 912 along the optical coupler layer 910 in the x-direction. The first ends and midpoint 912 of the optical coupler layers 908 and 910 can be substantially aligned. Thus, segments 908a and 910a have approximately the same x-direction length. Segment 910b of the optical coupler layer 910 has a greater x-direction length than segment 908b of the optical coupler layer 908. Thus, segment 910b of the optical coupler layer 910 extends laterally outward from segment 908b of the optical coupler layer 908 in the x-direction.

[0125] The top view width of segment 910b (e.g., in the y-direction) is substantially uniform between a midpoint 912 along the optical coupler layer 910 in the x-direction and a second end of the optical coupler layer 910 opposite the first end. The top view width of the optical coupler layer 910 at the midpoint 912 is greater than the top view width of the optical coupler layer 908 at the midpoint 912. The reduced top view width of the optical coupler layer 908 along segment 908b and / or the greater x-direction length of segment 910b facilitates the transfer of optical signals from the optical coupler layer 908 to the optical coupler layer 910.

[0126] The top view width of segment 910c (e.g., in the y-direction) decreases from the first end of the optical coupler layer 910 facing the optical signal I / O 904 to a midpoint 912 along the optical coupler layer 910 in the x-direction. Thus, segment 910c is a tapered segment in the top view of the semiconductor photonic device 900, wherein segment 910c has a substantially straight tapered sidewall. Segments 908a and 910c having different widths in the y-direction enable optical signals to be confined within and / or between segments 910a and 910c. In some embodiments, segment 908c and segment 910c have approximately the same x-direction length. In some embodiments, segment 910c has an x-direction length that is greater than the x-direction length of segment 908c.

[0127] Additionally and / or alternatively, optical coupler layers 908 and 910 can be formed of different material compositions for different top view profiles. The material compositions of optical coupler layers 908 and 910 can be selected such that the respective refractive indices of optical coupler layers 908 and 910 promote compatibility of optical coupler layers 908 and 910 for optical coupling purposes. For example, the material composition of optical coupler layer 908 can be selected such that optical coupler layer 908 has a first refractive index, and the material composition of optical coupler layer 910 can be selected such that optical coupler layer 910 has a second refractive index greater than the first refractive index, which enables optical signals to be transferred from optical coupler layer 908 to optical coupler layer 910 with low optical loss.

[0128] The material composition of the optical coupler layer 908 may include one or more dielectric materials having a low refractive index, and the material composition of the optical coupler layer 910 may include one or more semiconductor materials having a greater refractive index than the material composition of the optical coupler layer 908. Examples of dielectric materials for the optical coupler layer 908 include silicon nitride materials (Si x N y , such as Si3N4), aluminum oxide materials (Al x O y , such as Al2O3), aluminum nitride materials (AlN), hafnium oxide materials (HfO x , such as HfO2), titanium oxide materials (TiO x , such as TiO2), zinc oxide materials (ZnO) and / or germanium oxide materials (GeO x , such as GeO 2 ), among other examples. Examples of semiconductor materials for the optical coupler layer 910 include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0129] Fig. 9B The semiconductor photonic device 900 is shown in FIG. Fig. 9A A cross-sectional view of line GG in FIG. 1 through the center of optical coupler layers 908 and 910. Fig. 9B As shown in , the semiconductor photonic device 900 may also include a semiconductor substrate 914, and the dielectric layer 906 is located on the semiconductor substrate 914. The semiconductor substrate 914 may include a semiconductor substrate, such as a silicon (Si) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. Optical coupler layers 908 and 910 are arranged in the semiconductor photonic device 900 in the z direction, and the z direction is approximately perpendicular to the surface of the semiconductor substrate 914. For example, the optical coupler layer 908 is located on the optical coupler layer 910. Optionally, the optical coupler layers 908 and 910 can be arranged so that the optical coupler layers 908 and 910 are adjacent in the y direction. The optical coupler layers 908 and 910 are separated by the dielectric layer 906 so that the optical coupler layers 908 and 910 are not in direct contact with each other.

[0130] like Fig. 9B 904. As further shown in FIG. 9 , an optical signal path 916 of an optical signal may begin at an optical signal I / O 904. The optical signal may propagate along the optical signal path 916 from the optical signal I / O 904 to segments 908a and 908c of the optical coupler layer 908. Thus, the optical coupler layer 908 is optically coupled to the optical signal I / O 904. The optical signal may propagate along segment 908c to segment 908a, and from segment 908a to an intermediate point 912. The optical signal may then transfer (e.g., downward) to segment 910b of the optical coupler layer 910. Thus, the optical coupler layer 910 is optically coupled to the optical coupler layer 908. The optical signal may transfer from segment 910b of the optical coupler layer 910 to a PIC (not shown) and / or to another location in the semiconductor photonic device 900.

[0131] Fig. 9C The semiconductor photonic device 900 is shown in FIG. Fig. 9A FIG. 1 is a cross-sectional view of line HH passing through optical coupler layers 908 and 910 at their first ends. Fig. 9C As shown in , the optical coupler layer 910 can have a dimension D34 corresponding to the spacing between the segment 910c and the segment 910a of the optical coupler layer 910. Fig. 9C As further shown in FIG. 1 , optical coupler layer 910 can have a dimension D35 corresponding to the spacing between segment 908c and segment 908a of optical coupler layer 908. In some embodiments, dimension D34 and dimension D35 are approximately equal. In some embodiments, dimension D34 and dimension D35 are different spacings.

[0132] like Fig. 9CAs further shown in , the optical coupler layer 910 can have a dimension D36 corresponding to the z-direction thickness of the optical coupler layer 910. The optical coupler layer 908 can have a dimension D37 corresponding to the z-direction thickness of the optical coupler layer 908. Dimension D37 can be greater than dimension D36. For example, the ratio of dimension D37 to dimension D36 can be greater than approximately 1:1 and less than or approximately equal to approximately 100:1. However, other values ​​for the ratio of dimension D37 to dimension D36 are within the scope of the disclosed embodiments. In some embodiments, dimension D36 is included in the range from approximately 0.01 microns to approximately 0.8 microns. However, other values ​​for this range are within the scope of the disclosed embodiments. In some embodiments, dimension D37 is included in the range from approximately 0.01 microns to approximately 1 micron. However, other values ​​for this range are within the scope of the disclosed embodiments.

[0133] Combination FIG. 4A to FIG. 4E and / or 7A to 7E Similar semiconductor processing operations and / or techniques described can be used to form semiconductor photonic device 900. For example, optical coupler layer 910 can be formed in the semiconductor layer above dielectric layer 906. Additional material for dielectric layer 906 can be deposited to seal optical coupler layer 910. Optical coupler layer 908 can be formed above optical coupler layer 910 in dielectric layer 906. Additional material for dielectric layer 906 can be deposited to seal optical coupler layer 908.

[0134] As shown above, provide 9A to 9C As an example. Other examples can be related to 9A to 9C The content described is different.

[0135] FIG. 10A to FIG. 10C is a diagram of an exemplary semiconductor photonic device 1000 described herein. The semiconductor photonic device 1000 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 1000 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0136] Fig. 10A is a top view of the xy plane of the semiconductor photonic device 1000. Fig. 10AAs shown in , the semiconductor photonic device 1000 includes a multilayer coupler structure 1002. The multilayer coupler structure 1002 is optically coupled to an optical signal I / O 1004. The multilayer coupler structure 1002 can be configured to provide an optical signal between the optical signal I / O 1004 and another structure of the semiconductor photonic device 1000, such as a PIC (not shown). For example, the multilayer coupler structure 1002 can receive an optical signal from the optical signal I / O 1004 and provide the optical signal to the PIC. As another example, the multilayer coupler structure 1002 can receive an optical signal from the PIC and provide the optical signal to the optical signal I / O 1004.

[0137] The multilayer coupler structure 1002 may be included in a dielectric layer 1006 of the semiconductor photonic device 1000. The dielectric layer 1006 may include one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y ), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0138] The multilayer coupler structure 1002 includes a plurality of optical coupler layers, such as an optical coupler layer 1008 and an optical coupler layer 1010. The optical coupler layers 1008 and 1010 may each include a waveguide that enables optical signals to be transferred between and through the optical coupler layers 1008 and 1010. The optical coupler layer 1008 is adjacent to the optical coupler layer 1010 in the dielectric layer 1006. In some embodiments, the optical coupler layers 1008 and 1010 are vertically adjacent in the semiconductor photonic device 1000 because the optical coupler layers 1008 and 1010 are arranged in a direction approximately perpendicular to a top surface of the dielectric layer 1006. For example, the optical coupler layer 1010 may be located above the optical coupler layer 1008. In some embodiments, the optical coupler layers 1008 and 1010 are horizontally adjacent in the semiconductor photonic device 1000 in that the optical coupler layers 1008 and 1010 are located side by side in the y-direction in the semiconductor photonic device 1000 .

[0139] In the top view of the multilayer coupler structure 1002, the optical coupler layer 1008 includes a segment 1008a, a segment 1008b optically and / or physically coupled to the segment 1008a at a first end of the segment 1008a, and a plurality of segments 1008c optically and / or physically coupled to the segment 1008a at a second end of the segment 1008a opposite to the first end. In the semiconductor photonic device 1000, the segments 1008a, 1008b, and 1008c are arranged in the x-direction, and the plurality of segments 1008c are arranged in the y-direction. The segment 1008c enables an optical signal to be coupled from the optical signal I / O 1004 to the optical coupler layer 1008, and provided from the segment 1008c to the segment 1008a.

[0140] In the top view of the multilayer coupler structure 1002, the optical coupler layer 1010 includes a segment 1010a, a segment 1010b optically and / or physically coupled to the segment 1010a at a first end of the segment 1010a, and a plurality of segments 1010c optically and / or physically coupled to the segment 1010a at a second end of the segment 1010a opposite to the first end. In the semiconductor photonic device 1000, the segments 1010a, 1010b, and 1010c are arranged in the x-direction, and the plurality of segments 1010c are arranged in the y-direction.

[0141] The top view width of segment 1008a (e.g., in the y-direction) decreases from the second end of the optical coupler layer 1008 facing segment 1008c to a midpoint 1012 along the optical coupler layer 1008 in the x-direction. Thus, segment 1008a is a tapered segment in the top view of the semiconductor photonic device 1000, wherein segment 1008a has a substantially straight tapered sidewall. The top view width of segment 1008b (e.g., in the y-direction) is substantially uniform between the midpoint 1012 along the optical coupler layer 1008 in the x-direction and a second end of the optical coupler layer 1008 opposite the first end. The top view width of segment 1008c (e.g., in the y-direction) increases from the first end of the optical coupler layer 1008 facing the optical signal I / O 1004 to segment 1008a along the optical coupler layer 1008 in the x-direction. Thus, segment 1008c is a tapered segment in the top view of semiconductor photonic device 1000, wherein segment 1008c has a substantially straight tapered sidewall. Segment 1008c has a smaller width in the y-direction than segments 1008a and 1008b, which enables the optical signal to be distributed to segment 1008a. In addition, the tapered shape of segment 1008a enables the optical signal to be focused and combined before the optical signal is transferred to optical coupler layer 1010.

[0142] The top view width (e.g., in the y-direction) of segment 1010a decreases from a first end of the optical coupler layer 1010 facing the optical signal I / O 1004 to a midpoint 1012 along the optical coupler layer 1010 in the x-direction. The top view width (e.g., in the y-direction) of segment 1010b is substantially uniform between the midpoint 1012 along the optical coupler layer 1010 in the x-direction and a second end of the optical coupler layer 1010 opposite the first end. The top view width (e.g., in the y-direction) of segment 1010c increases from a first end of the optical coupler layer 1010 facing the optical signal I / O 1004 to segment 1010a along the optical coupler layer 1010 in the x-direction. Thus, segment 1010c is a tapered segment in the top view of the semiconductor photonic device 1000, wherein segment 1010c has a substantially straight tapered sidewall.

[0143] The optical coupler layers 1008 and 1010 have different top view profiles. For example, the top view width of the optical coupler layer 1008 at the midpoint 1012 is greater than the top view width of the optical coupler layer 1010 at the midpoint 1012. As another example, the number of segments 1008c can be greater than the number of segments 1010c. As another example, the segments 1008c and 1010c can be non-overlapping or partially overlapping in the top view of the semiconductor photonic device 1000. As another example, the top view width of the segment 1008b can be greater than the top view width of the segment 1010b.

[0144] Additionally and / or alternatively, for different top view profiles, optical coupler layers 1008 and 1010 can be formed of different material compositions. The material compositions of optical coupler layers 1008 and 1010 can be selected such that the respective refractive indices of optical coupler layers 1008 and 1010 promote compatibility of optical coupler layers 1008 and 1010 for optical coupling purposes. For example, the material composition of optical coupler layer 1008 can be selected such that optical coupler layer 1008 has a first refractive index, and the material composition of optical coupler layer 1010 can be selected such that optical coupler layer 1010 has a second refractive index greater than the first refractive index.

[0145] The material composition of the optical coupler layer 1008 may include one or more semiconductor materials having a lower refractive index than the material composition of the optical coupler layer 1010. The material composition of the optical coupler layer 1008 may include one or more dielectric materials having a lower refractive index. Examples of dielectric materials for the optical coupler layer 1008 include silicon nitride materials (Si x N y , such as Si3N4), aluminum oxide materials (Al x O y , such as Al2O3), aluminum nitride materials (AlN), hafnium oxide materials (HfO x, such as HfO2), titanium oxide materials (TiO x , such as TiO2), zinc oxide materials (ZnO) and / or germanium oxide materials (GeO x , such as GeO 2 ), among other examples. Examples of semiconductor materials for the optical coupler layer 1010 include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0146] Fig. 10B The semiconductor photonic device 1000 is shown in FIG. Fig. 10A A cross-sectional view of line II in FIG. 1 through the center of optical coupler layers 1008 and 1010. Fig. 10B As shown in , the semiconductor photonic device 1000 may also include a semiconductor substrate 1014, and the dielectric layer 1006 is located on the semiconductor substrate 1014. The semiconductor substrate 1014 may include a semiconductor substrate, such as a silicon (Si) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. Optical coupler layers 1008 and 1010 are arranged in the semiconductor photonic device 1000 in the z direction, and the z direction is approximately perpendicular to the surface of the semiconductor substrate 1014. For example, the optical coupler layer 1008 is located on the optical coupler layer 1010. Optionally, the optical coupler layers 1008 and 1010 can be arranged so that the optical coupler layers 1008 and 1010 are adjacent in the y direction. The optical coupler layers 1008 and 1010 are separated by the dielectric layer 1006 so that the optical coupler layers 1008 and 1010 are not in direct contact with each other.

[0147] like Fig. 10B 1004. As further shown in FIG. 101 , an optical signal path 1016 of an optical signal may begin at an optical signal I / O 1004. The optical signal may propagate along the optical signal path 1016 from the optical signal I / O 1004 to a segment 1008c of an optical coupler layer 1008. Thus, the optical coupler layer 1008 is optically coupled to the optical signal I / O 1004. The optical signal may propagate along the segment 1008c to a segment 1008a, from which it propagates to an intermediate point 1012. The optical signal may then transfer (e.g., downward) to a segment 1010b of an optical coupler layer 1010. Thus, the optical coupler layer 1010 is optically coupled to the optical coupler layer 1008. The optical signal may transfer from the segment 1010b of the optical coupler layer 1010 to a PIC (not shown) and / or to another location in the semiconductor photonic device 1000.

[0148] Fig. 10C The semiconductor photonic device 1000 is shown in FIG. Fig. 10A FIG. 1 is a cross-sectional view of the optical coupler layers 1008 and 1010 at their first ends. Fig. 10CAs shown in , the optical coupler layer 1010 can have a dimension D38 corresponding to the spacing between adjacent segments 1010c of the optical coupler layer 1010. Fig. 10C As further shown in FIG. 1 , the optical coupler layer 1008 can have a dimension D39 corresponding to the spacing between adjacent segments 1008c of the optical coupler layer 1008. In some embodiments, the dimension D38 and the dimension D39 are approximately equal. In some embodiments, the dimension D38 and the dimension D39 are different spacings.

[0149] like Fig. 10C As further shown in , the optical coupler layer 1010 can have a dimension D40 corresponding to the z-direction thickness of the optical coupler layer 1010. The optical coupler layer 1008 can have a dimension D41 corresponding to the z-direction thickness of the optical coupler layer 1008. Dimension D41 can be greater than dimension D40. For example, the ratio of dimension D41 to dimension D40 can be greater than about 1:1 and less than or approximately equal to about 100:1. However, other values ​​for the ratio of dimension D41 to dimension D40 are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D40 is included in the range from about 0.01 microns to about 0.8 microns. However, other values ​​for this range are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D41 is included in the range from about 0.01 microns to about 1 micron. However, other values ​​for this range are within the scope of the embodiments of the present disclosure.

[0150] Combination FIG. 4A to FIG. 4E and / or 7A to 7E Similar semiconductor processing operations and / or techniques described can be used to form semiconductor photonic device 1000. For example, optical coupler layer 1010 can be formed in the semiconductor layer above dielectric layer 1006. Additional material for dielectric layer 1006 can be deposited to seal optical coupler layer 1010. Optical coupler layer 1008 can be formed above optical coupler layer 1010 in dielectric layer 1006. Additional material for dielectric layer 1006 can be deposited to seal optical coupler layer 1008.

[0151] As shown above, provide FIG. 10A to FIG. 10C As an example. Other examples can be related to FIG. 10A to FIG. 10C The content described is different.

[0152] FIG. 11A to FIG. 11C is a diagram of an exemplary semiconductor photonic device 1100 described herein. The semiconductor photonic device 1100 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 1100 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0153] Fig.11Ais a top view of the xy plane of the semiconductor photonic device 1100. Fig.11A As shown in , the semiconductor photonic device 1100 includes a multilayer coupler structure 1102. The multilayer coupler structure 1102 is optically coupled to an optical signal I / O 1104. The multilayer coupler structure 1102 can be configured to provide an optical signal between the optical signal I / O 1104 and another structure of the semiconductor photonic device 1100, such as a PIC (not shown). For example, the multilayer coupler structure 1102 can receive an optical signal from the optical signal I / O 1104 and provide the optical signal to the PIC. As another example, the multilayer coupler structure 1102 can receive an optical signal from the PIC and provide the optical signal to the optical signal I / O 1104.

[0154] The multilayer coupler structure 1102 may be included in the dielectric layer 1006 of the semiconductor photonic device 1100. The dielectric layer 1106 may include one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y ), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0155] The multilayer coupler structure 1102 includes a plurality of optical coupler layers, such as an optical coupler layer 1108 and an optical coupler layer 1110. The optical coupler layers 1108 and 1110 may each include a waveguide that enables optical signals to be transferred between and through the optical coupler layers 1108 and 1110. The optical coupler layer 1108 is adjacent to the optical coupler layer 1110 in the dielectric layer 1106. In some embodiments, the optical coupler layers 1108 and 1110 are vertically adjacent in the semiconductor photonic device 1100 because the optical coupler layers 1108 and 1110 are arranged in a direction approximately perpendicular to the top surface of the dielectric layer 1106. For example, the optical coupler layer 1110 may be located above the optical coupler layer 1108. In some embodiments, the optical coupler layers 1108 and 1110 are horizontally adjacent in the semiconductor photonic device 1100 in that the optical coupler layers 1108 and 1110 are located side by side in the y-direction in the semiconductor photonic device 1100 .

[0156] In the top view of the multilayer coupler structure 1102, the optical coupler layer 1108 includes a segment 1108a, a segment 1108b optically and / or physically coupled to the segment 1108a at a first end of the segment 1108a, and a plurality of segments 1108c optically and / or physically coupled to the segment 1108a at a second end of the segment 1108a opposite to the first end. In the semiconductor photonic device 1100, the segments 1108a, 1108b, and 1108c are arranged in the x-direction, and the plurality of segments 1108c are arranged in the y-direction. The segment 1108c enables an optical signal to be coupled from the optical signal I / O 1104 to the optical coupler layer 1108, and provided from the segment 1108c to the segment 1108a.

[0157] In the top view of the multilayer coupler structure 1102, the optical coupler layer 1110 includes a segment 1110a, a segment 1110b optically and / or physically coupled to the segment 1110a at a first end of the segment 1110a, and a plurality of segments 1110c optically and / or physically coupled to the segment 1110a at a second end of the segment 1110a opposite to the first end. In the semiconductor photonic device 1100, the segments 1110a, 1110b, and 1110c are arranged in the x-direction, and the plurality of segments 1110c are arranged in the y-direction.

[0158] The top view width of segment 1108a (e.g., in the y-direction) decreases from the second end of the optical coupler layer 1108 facing segment 1108c to a midpoint 1112 along the optical coupler layer 1108 in the x-direction. Thus, segment 1108a is a tapered segment in the top view of the semiconductor photonic device 1100, wherein segment 1108a has a substantially straight tapered sidewall. The top view width of segment 1108b (e.g., in the y-direction) is substantially uniform between the midpoint 1112 along the optical coupler layer 1108 in the x-direction and the second end of the optical coupler layer 1108 opposite the first end. The top view width of segment 1108c (e.g., in the y-direction) increases from the first end of the optical coupler layer 1108 facing the optical signal I / O 1104 to segment 1108a along the optical coupler layer 1108 in the x-direction. Thus, segment 1108c is a tapered segment in the top view of semiconductor photonic device 1100, wherein segment 1108c has a substantially straight tapered sidewall. Segment 1108c has a smaller width in the y-direction than segments 1108a and 1108b, which enables the optical signal to be distributed to segment 1108a. In addition, the tapered shape of segment 1108a enables the optical signal to be focused and combined before the optical signal is transferred to optical coupler layer 1110.

[0159] The top view width (e.g., in the y-direction) of segment 1110a decreases from a first end of the optical coupler layer 1110 facing the optical signal I / O 1104 to a midpoint 1112 along the optical coupler layer 1110 in the x-direction. The top view width (e.g., in the y-direction) of segment 1110b is substantially uniform between the midpoint 1112 along the optical coupler layer 1110 in the x-direction and a second end of the optical coupler layer 1110 opposite the first end. The top view width (e.g., in the y-direction) of segment 1110c increases from a first end of the optical coupler layer 1110 facing the optical signal I / O 1104 to segment 1110a along the optical coupler layer 1110 in the x-direction. Thus, segment 1110c is a tapered segment in the top view of the semiconductor photonic device 1100, wherein segment 1110c has a substantially straight tapered sidewall.

[0160] The optical coupler layers 1108 and 1110 have different top view profiles. For example, the top view width of the optical coupler layer 1108 at the midpoint 1112 is greater than the top view width of the optical coupler layer 1110 at the midpoint 1112. As another example, the number of segments 1108c can be greater than the number of segments 1110c. As another example, the segments 1108c and 1110c can be non-overlapping or partially overlapping in the top view of the semiconductor photonic device 1100. As another example, the top view width of the segment 1108b can be greater than the top view width of the segment 1110b.

[0161] Additionally and / or alternatively, for different top view profiles, optical coupler layers 1108 and 1110 can be formed of different material compositions. The material compositions of optical coupler layers 1108 and 1110 can be selected such that the respective refractive indices of optical coupler layers 1108 and 1110 promote compatibility of optical coupler layers 1108 and 1110 for optical coupling purposes. For example, the material composition of optical coupler layer 1108 can be selected such that optical coupler layer 1108 has a first refractive index, and the material composition of optical coupler layer 1110 can be selected such that optical coupler layer 1110 has a second refractive index that is less than the first refractive index.

[0162] The material composition of the optical coupler layer 1108 may include one or more semiconductor materials having a greater refractive index than the material composition of the optical coupler layer 1110. Examples of semiconductor materials for the optical coupler layer 1108 include silicon (Si), germanium (Ge), and / or another semiconductor material. The material composition of the optical coupler layer 1110 may include one or more dielectric materials having a lower refractive index. Examples of dielectric materials for the optical coupler layer 1110 include silicon nitride materials (Si). x N y , such as Si3N4), aluminum oxide materials (Al x O y, such as Al2O3), aluminum nitride materials (AlN), hafnium oxide materials (HfO x , such as HfO2), titanium oxide materials (TiO x , such as TiO2), zinc oxide materials (ZnO) and / or germanium oxide materials (GeO x , such as GeO2), among other examples.

[0163] Fig. 11B The semiconductor photonic device 1100 is shown in FIG. Fig.11A A cross-sectional view of the line KK in FIG. 1 through the center of the optical coupler layers 1108 and 1110. Fig. 11B As shown in , the semiconductor photonic device 1100 may also include a semiconductor substrate 1114, and the dielectric layer 1106 is located on the semiconductor substrate 1114. The semiconductor substrate 1114 may include a semiconductor substrate, such as a silicon (Si) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. Optical coupler layers 1108 and 1110 are arranged in the semiconductor photonic device 1100 in the z direction, and the z direction is approximately perpendicular to the surface of the semiconductor substrate 1114. For example, the optical coupler layer 1110 is located on the optical coupler layer 1108. Optionally, the optical coupler layers 1108 and 1110 can be arranged so that the optical coupler layers 1108 and 1110 are adjacent in the y direction. The optical coupler layers 1108 and 1110 are separated by the dielectric layer 1106 so that the optical coupler layers 1108 and 1110 are not in direct contact with each other.

[0164] like Fig. 11B 1104. As further shown in FIG. 11 , an optical signal path 1116 of an optical signal may begin at an optical signal I / O 1104. The optical signal may propagate along the optical signal path 1116 from the optical signal I / O 1104 to a segment 1108c of an optical coupler layer 1108. Thus, the optical coupler layer 1108 is optically coupled to the optical signal I / O 1104. The optical signal may propagate along segment 1108c to segment 1108a, and from segment 1108a to an intermediate point 1112. The optical signal may then transfer (e.g., upward) to a segment 1110b of an optical coupler layer 1110. Thus, the optical coupler layer 1110 is optically coupled to the optical coupler layer 1108. The optical signal may transfer from segment 1110b of the optical coupler layer 1110 to a PIC (not shown) and / or to another location in the semiconductor photonic device 1100.

[0165] Fig. 11C The semiconductor photonic device 1100 is shown in FIG. Fig.11A FIG. 1 is a cross-sectional view of line LL passing through optical coupler layers 1108 and 1110 at a first end of optical coupler layers 1108 and 1110. Fig. 11CAs shown in , the optical coupler layer 1108 can have a dimension D42 corresponding to the spacing between adjacent segments 1108c of the optical coupler layer 1108. Fig. 11C As further shown in FIG. 1 , the optical coupler layer 1110 can have a dimension D43 corresponding to the spacing between adjacent segments 1110c of the optical coupler layer 1110. In some embodiments, the dimension D42 and the dimension D43 are approximately equal. In some embodiments, the dimension D42 and the dimension D43 are different spacings.

[0166] like Fig. 11C As further shown in , the optical coupler layer 1108 can have a dimension D44 corresponding to the z-direction thickness of the optical coupler layer 1108. The optical coupler layer 1110 can have a dimension D45 corresponding to the z-direction thickness of the optical coupler layer 1110. Dimension D44 can be greater than dimension D45. For example, the ratio of dimension D44 to dimension D45 can be greater than about 1:1 and less than or approximately equal to about 100:1. However, other values ​​for the ratio of dimension D44 to dimension D45 are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D45 is included in the range from about 0.01 microns to about 0.8 microns. However, other values ​​for this range are within the scope of the embodiments of the present disclosure. In some embodiments, dimension D44 is included in the range from about 0.01 microns to about 1 micron. However, other values ​​for this range are within the scope of the embodiments of the present disclosure.

[0167] Combination FIG. 4A to FIG. 4E and / or 7A to 7E Similar semiconductor processing operations and / or techniques described can be used to form semiconductor photonic device 1100. For example, optical coupler layer 1108 can be formed in the semiconductor layer above dielectric layer 1106. Additional material for dielectric layer 1106 can be deposited to seal optical coupler layer 1108. Optical coupler layer 1110 can be formed above optical coupler layer 1108 in dielectric layer 1106. Additional material for dielectric layer 1106 can be deposited to seal optical coupler layer 1110.

[0168] As shown above, provide FIG. 11A to FIG. 11C As an example. Other examples can be related to FIG. 11A to FIG. 11C The content described is different.

[0169] Fig. 12A and Fig. 12B is a diagram of an exemplary semiconductor photonic device 1200 described herein. The semiconductor photonic device 1200 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 1200 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0170] like Fig. 12A and Fig. 12B As shown in , semiconductor photonic device 1200 may include a combination and arrangement of layers and / or structures similar to semiconductor photonic device 200, such as a multilayer coupler structure 1202 optically coupled to optical signal I / O 1204, a dielectric layer 1206, an optical coupler layer 1208, an optical coupler layer 1210, an intermediate point 1212, and a semiconductor substrate 1214. Optical coupler layer 1208 is located adjacent to optical coupler layer 1210 (e.g., above it in the z-direction) and includes segments 1208a and 1208b. Optical coupler layer 1210 includes segments 1210a and 1210b.

[0171] However, in the semiconductor photonic device 1200, the segment 1208b is a tapered segment having curved sidewalls in the top view of the semiconductor photonic device 1200, rather than the substantially straight sidewalls of the segment 208b in the top view of the semiconductor photonic device 200. Therefore, the top view width of the segment 1208b decreases in a nonlinear manner from the middle point 1212 to the second end of the optical coupler layer 1208 opposite to the first end facing the optical signal I / O 1204. The curved shape of the segment 1208b can effectively shorten the transition length of the optical signal from the optical coupler layer 1208 to the optical coupler layer 1210, which can reduce the optical loss between the optical coupler layer 1208 and the optical coupler layer 1210. In particular, the curved shape of the segment 1208b further confines and consolidates the optical signal in the segment 1208b, thereby increasing the intensity of the optical signal for increased transmission efficiency of the optical signal from the optical coupler layer 1208 to the optical coupler layer 1210. The shape of the curve and the amount of curvature of the sides of segment 1208b may be selected to achieve confinement and combining of the optical signals in segment 1208b.

[0172] Fig. 12B The semiconductor photonic device 1200 is shown in FIG. Fig. 12A The cross-sectional view of line MM passing through the center of optical coupler layers 1208 and 1210. Fig. 12B As shown in FIG. 1 , optical coupler layers 1208 and 1210 are arranged in the semiconductor photonic device 1200 in the z direction, which is approximately perpendicular to the surface of the semiconductor substrate 1214. For example, the optical coupler layer 1208 is located above the optical coupler layer 1210. Alternatively, the optical coupler layers 1208 and 1210 can be arranged so that the optical coupler layers 1208 and 1210 are adjacent in the y direction. The optical coupler layers 1208 and 1210 are separated by the dielectric layer 1206 so that the optical coupler layers 1208 and 1210 are not in direct contact with each other.

[0173] like Fig. 12B1204. As further shown in FIG. 1214 , an optical signal path 1216 of an optical signal may begin at the optical signal I / O 1204. The optical signal may propagate along the optical signal path 1216 from the optical signal I / O 1204 to a segment 1208a of the optical coupler layer 1208. Thus, the optical coupler layer 1208 is optically coupled to the optical signal I / O 1204. The optical signal may propagate along the segment 1208a to the intermediate point 1212, and may transfer from the segments 1208a and / or 1208b (e.g., downward) to the segments 1210a and / or 1210b of the optical coupler layer 1210. Thus, the optical coupler layer 1210 is optically coupled to the optical coupler layer 1208. The optical signal may transfer from the segment 1210b of the optical coupler layer 1210 to a PIC (not shown) and / or to another location in the semiconductor photonic device 1200. Generally, the optical signal can be confined within and / or between the optical coupler layers 1208 and 1210, thereby reducing interaction with the surrounding dielectric layer 1206 and minimizing energy loss of the optical signal.

[0174] As shown above, provide Fig. 12A and Fig. 12B As an example. Other examples can be related to Fig. 12A and Fig. 12B The content described is different.

[0175] Fig.13A and Fig. 13B is a diagram of an exemplary semiconductor photonic device 1300 described herein. The semiconductor photonic device 1300 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 1300 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0176] like Fig.13A and Fig. 13B As shown in , semiconductor photonic device 1300 may include a combination and arrangement of layers and / or structures similar to semiconductor photonic device 500, such as a multilayer coupler structure 1302 optically coupled to optical signal I / O 1304, a dielectric layer 1306, an optical coupler layer 1308, an optical coupler layer 1310, an intermediate point 1312, and a semiconductor substrate 1314. Optical coupler layer 1308 is located adjacent to optical coupler layer 1310 (e.g., below it in the z-direction) and includes segments 1308a and 1308b. Optical coupler layer 1310 includes segments 1310a and 1310b.

[0177] However, in the semiconductor photonic device 1300, the segment 1308b is a tapered segment with curved sidewalls in the top view of the semiconductor photonic device 1300, rather than the substantially straight sidewalls of the segment 508b in the top view of the semiconductor photonic device 500. Therefore, the top view width of the segment 1308b decreases in a nonlinear manner from the midpoint 1312 to the second end of the optical coupler layer 1308 opposite to the first end facing the optical signal I / O 1304. The curved shape of the segment 1308b can effectively shorten the transition length of the optical signal from the optical coupler layer 1308 to the optical coupler layer 1310, which can reduce the optical loss between the optical coupler layer 1308 and the optical coupler layer 1310. In particular, the curved shape of the segment 1308b further confines and consolidates the optical signal in the segment 1308b, thereby increasing the intensity of the optical signal for increased transmission efficiency of the optical signal from the optical coupler layer 1308 to the optical coupler layer 1310. The shape of the curve and the amount of curvature of the sides of segment 1308b may be selected to achieve confinement and combining of the optical signals in segment 1308b.

[0178] Fig. 13B The semiconductor photonic device 1300 is shown in FIG. Fig.13A The line NN in FIG. 1 passes through the center of the optical coupler layers 1308 and 1310. Fig. 13B As shown in FIG. 1 , optical coupler layers 1308 and 1310 are arranged in the semiconductor photonic device 1300 in the z direction, which is approximately perpendicular to the surface of the semiconductor substrate 1314. For example, the optical coupler layer 1310 is located above the optical coupler layer 1308. Alternatively, the optical coupler layers 1308 and 1310 can be arranged so that the optical coupler layers 1308 and 1310 are adjacent in the y direction. The optical coupler layers 1308 and 1310 are separated by the dielectric layer 1306 so that the optical coupler layers 1308 and 1310 are not in direct contact with each other.

[0179] like Fig. 13B1304. As further shown in FIG. 13 , an optical signal path 1316 of an optical signal may begin at the optical signal I / O 1304. The optical signal may propagate along the optical signal path 1316 from the optical signal I / O 1304 to a segment 1308a of the optical coupler layer 1308. Thus, the optical coupler layer 1308 is optically coupled to the optical signal I / O 1304. The optical signal may propagate along the segment 1308a to the intermediate point 1312, and may transfer from the segments 1308a and / or 1308b (e.g., upward) to the segments 1310a and / or 1310b of the optical coupler layer 1310. Thus, the optical coupler layer 1310 is optically coupled to the optical coupler layer 1308. The optical signal may transfer from the segment 1310b of the optical coupler layer 1310 to a PIC (not shown) and / or to another location in the semiconductor photonic device 1300. Generally, the optical signal can be confined within and / or between the optical coupler layers 1308 and 1310, thereby reducing interaction with the surrounding dielectric layer 1306 and minimizing energy loss of the optical signal.

[0180] As shown above, provide Fig.13A and Fig. 13B As an example. Other examples can be related to Fig.13A and Fig. 13B The content described is different.

[0181] FIG. 14A to FIG. 14C is a diagram of an exemplary semiconductor photonic device 1400 described herein. The semiconductor photonic device 1400 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 1400 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0182] Fig.14A is a top view of the xy plane of the semiconductor photonic device 1400. Fig.14A As shown in FIG. 1 , a semiconductor photonic device 1400 includes a multilayer coupler structure 1402. The multilayer coupler structure 1402 is optically coupled to an optical signal I / O 1404. The multilayer coupler structure 1402 can be configured to provide an optical signal between the optical signal I / O 1404 and another structure of the semiconductor photonic device 1400, such as a PIC (not shown). For example, the multilayer coupler structure 1402 can receive an optical signal from the optical signal I / O 1404 and provide the optical signal to the PIC. As another example, the multilayer coupler structure 1402 can receive an optical signal from the PIC and provide the optical signal to the optical signal I / O 1404.

[0183] The multilayer coupler structure 1402 may be included in a dielectric layer 1406 of the semiconductor photonic device 1400. The dielectric layer 1406 may include one or more dielectric materials, such as silicon oxide (SiO x), silicon nitride (Si x N y ), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0184] The multilayer coupler structure 1402 includes a plurality of optical coupler layers, such as an optical coupler layer 1408 and an optical coupler layer 1410. The optical coupler layers 1408 and 1410 may each include a waveguide that enables optical signals to be transferred between and through the optical coupler layers 1408 and 1410. The optical coupler layer 1408 is adjacent to the optical coupler layer 1410 in the dielectric layer 1406. In some embodiments, the optical coupler layers 1408 and 1410 are vertically adjacent in the semiconductor photonic device 1400 because the optical coupler layers 1408 and 1410 are arranged in a direction approximately perpendicular to the top surface of the dielectric layer 1406. For example, the optical coupler layer 1408 may be located above the optical coupler layer 1410. In some embodiments, the optical coupler layers 1408 and 1410 are horizontally adjacent in the semiconductor photonic device 1400 in that the optical coupler layers 1408 and 1410 are located side by side in the y-direction in the semiconductor photonic device 1400 .

[0185] The optical coupler layer 1408 includes a segment 1408a and a segment 1408b. The optical coupler layer 1410 includes a segment 1410a and a segment 1410b. The top view width of the segment 1408a (e.g., in the y-direction) increases from a first end of the optical coupler layer 1408 facing the optical signal I / O 1404 to a midpoint 1412a along the optical coupler layer 1408 in the x-direction. Thus, the segment 1408a is a tapered segment in the top view of the semiconductor photonic device 1400, wherein the segment 1408a has a substantially straight tapered sidewall. The top view width of the segment 1408b (e.g., in the y-direction) is substantially uniform between the midpoint 1412a along the optical coupler layer 1408 in the x-direction and a second end of the optical coupler layer 1408 opposite the first end. The top view width of segment 1408c (e.g., in the y-direction) decreases from the first end of the optical coupler layer 1408 facing the optical signal I / O 1404 to the midpoint 1412a along the optical coupler layer 1408 in the x-direction. Thus, segment 1408c is a tapered segment in the top view of the semiconductor photonic device 1400, wherein segment 1408c has a substantially straight tapered sidewall. Segments 1408a and 1408c having different widths in the y-direction enable optical signals to be confined within and / or between segments 1408a and 1408c. In addition, the tapering of segments 1408a and 1408c enables optical signals to be focused and combined before the optical signals are transferred to the optical coupler layer 1410.

[0186] The top view width (e.g., in the y-direction) of segment 1408a is substantially uniform between a first end of the optical coupler layer 1408 facing the optical signal I / O 1404 and a midpoint 1412a in the x-direction along the optical coupler layer 1408. The top view width (e.g., in the y-direction) of segment 1408b decreases from the midpoint 1412a in the x-direction along the optical coupler layer 1408 to a second end of the optical coupler layer 1408 opposite the first end. Thus, segment 1408b is a tapered segment and may have curved sidewalls and / or substantially straight sidewalls.

[0187] The top view width (e.g., in the y-direction) of segment 1410a is substantially uniform between a second end of optical coupler layer 1410 adjacent to a second end of optical coupler layer 1408 and a midpoint 1412b along optical coupler layer 1410 in the x-direction. The top view width (e.g., in the y-direction) of segment 1410b decreases from midpoint 1412b along optical coupler layer 1408 in the x-direction to a first end of optical coupler layer 1410 facing optical signal I / O 1404. Thus, segment 1410b is a tapered segment and may have curved sidewalls and / or substantially straight sidewalls. Segment 1408a extends laterally outward from segment 1410b in the x-direction toward optical signal I / O 1404, and segment 1410a extends laterally outward from segment 1408b in the x-direction.

[0188] Optocoupler layers 1408 and 1410 have different top view profiles. For example, the top view profile of optical coupler layer 1408 and the top view profile of optical coupler layer 1410 are mirror image top view profiles. In particular, segment 1408a is located adjacent to optical signal I / O 1404 and adjacent to the end of segment 1410b of optical coupler layer 1410. Segment 1408b is located adjacent to segment 1410a. As another example, the top view width of segment 1408a of optical coupler layer 1408 is greater than the top view width of segment 1410a of optical coupler layer 1410.

[0189] Additionally and / or alternatively, for different top view profiles, optical coupler layers 1408 and 1410 can be formed of different material compositions. The material compositions of optical coupler layers 1408 and 1410 can be selected such that the respective refractive indices of optical coupler layers 1408 and 1410 promote compatibility of optical coupler layers 1408 and 1410 for optical coupling purposes. For example, the material composition of optical coupler layer 1408 can be selected such that optical coupler layer 1408 has a first refractive index, and the material composition of optical coupler layer 1410 can be selected such that optical coupler layer 1410 has a second refractive index greater than the first refractive index, which enables optical signals to be transferred from optical coupler layer 1408 to optical coupler layer 1410 with low optical loss.

[0190] The material composition of the optical coupler layer 1408 may include one or more dielectric materials having a low refractive index, and the material composition of the optical coupler layer 1410 may include one or more semiconductor materials having a greater refractive index than the material composition of the optical coupler layer 1408. Examples of dielectric materials for the optical coupler layer 1408 include silicon nitride materials (Si x N y , such as Si3N4), aluminum oxide materials (Al x O y , such as Al2O3), aluminum nitride materials (AlN), hafnium oxide materials (HfO x , such as HfO2), titanium oxide materials (TiO x , such as TiO2), zinc oxide materials (ZnO) and / or germanium oxide materials (GeO x , such as GeO 2 ), among other examples. Examples of semiconductor materials for the optical coupler layer 1410 include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0191] Fig. 14B The semiconductor photonic device 1400 is shown in FIG. Fig.14A A cross-sectional view of line OO through the center of optical coupler layers 1408 and 1410. Fig. 14B As shown in , the semiconductor photonic device 1400 may also include a semiconductor substrate 1414, and the dielectric layer 1406 is located on the semiconductor substrate 1414. The semiconductor substrate 1414 may include a semiconductor substrate, such as a silicon (Si) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. Optical coupler layers 1408 and 1410 are arranged in the semiconductor photonic device 1400 in the z direction, and the z direction is approximately perpendicular to the surface of the semiconductor substrate 1414. For example, the optical coupler layer 1408 is located on the optical coupler layer 1410. Optionally, the optical coupler layers 1408 and 1410 can be arranged so that the optical coupler layers 1408 and 1410 are adjacent in the y direction. The optical coupler layers 1408 and 1410 are separated by the dielectric layer 1406 so that the optical coupler layers 1408 and 1410 are not in direct contact with each other.

[0192] like Fig. 14BAs further shown in FIG. 1 , the top view profile of optical coupler layers 1408 and 1410 enables bidirectional (or two-way) transmission of optical signals in multilayer coupler structure 1402. For example, an optical signal may propagate along first optical signal path 1416a from optical signal I / O 1404 to segment 1408a of optical coupler layer 1408, to segment 1408b, may transfer (e.g., downward) to segments 1410a and / or 1410b of optical coupler layer 1410, and may be provided from optical coupler layer 1410 to a PIC (not shown). As another example, the optical signal may propagate from the PIC (not shown) to segment 1410a of optical coupler layer 1410 along second optical signal path 1416b, propagate to segment 1410b, may be transferred (e.g., upward) to segments 1408a and / or 1408b of optical coupler layer 1408, and may be provided from optical coupler layer 1408 to optical signal I / O 1404. Thus, optical coupler layer 1408 is optically coupled to optical signal I / O 1404, and optical coupler layer 1410 is optically coupled to optical coupler layer 1408.

[0193] Fig. 14C A top view of optical coupler layers 1408 and 1410 is shown. Fig. 14C , dimension D46 corresponds to the top view width (e.g., in the y direction) of segment 1408a. Dimension D47 corresponds to the top view width (e.g., in the y direction) of segment 1410a. In some embodiments, dimension D46 is greater than dimension D47. In some embodiments, dimension D46 and dimension D47 are approximately equal.

[0194] Combination FIG. 4A to FIG. 4E and / or 7A to 7E Similar semiconductor processing operations and / or techniques described can be used to form semiconductor photonic device 1400. For example, optical coupler layer 1410 can be formed in the semiconductor layer above dielectric layer 1406. Additional material for dielectric layer 1406 can be deposited to seal optical coupler layer 1410. Optical coupler layer 1408 can be formed above optical coupler layer 1410 in dielectric layer 1406. Additional material for dielectric layer 1406 can be deposited to seal optical coupler layer 1408.

[0195] As shown above, provide FIG. 14A to FIG. 14C As an example. Other examples can be related to FIG. 14A to FIG. 14C The content described is different.

[0196] Fig.15A and Fig. 15Bis a diagram of an exemplary semiconductor photonic device 1500 described herein. The semiconductor photonic device 1500 may include an optical coupling circuit, such as an edge coupler or an edge coupling circuit. The semiconductor photonic device 1500 may be configured to provide an optical signal between an optical signal I / O (e.g., an optical fiber) and a PIC for high-bandwidth optical communication.

[0197] Fig.15A is a top view of the xy plane of the semiconductor photonic device 1500. Fig.15A As shown in FIG. 1 , the semiconductor photonic device 1500 includes a multilayer coupler structure 1502. The multilayer coupler structure 1502 is optically coupled to an optical signal I / O 1504. The multilayer coupler structure 1502 can be configured to provide an optical signal between the optical signal I / O 1504 and another structure of the semiconductor photonic device 1500, such as a PIC (not shown). For example, the multilayer coupler structure 1502 can receive an optical signal from the optical signal I / O 1504 and provide the optical signal to the PIC. As another example, the multilayer coupler structure 1502 can receive an optical signal from the PIC and provide the optical signal to the optical signal I / O 1504.

[0198] The multilayer coupler structure 1502 may be included in a dielectric layer 1506 of the semiconductor photonic device 1500. The dielectric layer 1506 may include one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y ), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0199] The multilayer coupler structure 1502 includes a plurality of optical coupler layers, such as optical coupler layer 1508, optical coupler layer 1510, and optical coupler layer 1512. Optical coupler layers 1508, 1510, and 1512 may each include a waveguide that enables optical signals to be transferred between and through optical coupler layers 1508, 1510, and / or 1512. Optical coupler layer 1508 is adjacent to optical coupler layer 1510 and optical coupler layer 1512 in dielectric layer 1506. In some embodiments, optical coupler layer 1508 is vertically adjacent to optical coupler layers 1510 and 1512 in semiconductor photonic device 1500. Thus, optical coupler layers 1508 and 1510 may be arranged in a direction approximately perpendicular to the top surface of dielectric layer 1506, and optical coupler layers 1508 and 1512 may be arranged in a direction approximately perpendicular to the top surface of dielectric layer 1506. For example, optical coupler layer 1508 may be located above optical coupler layer 1510 and above optical coupler layer 1512. In some embodiments, optical coupler layer 1508 is horizontally adjacent to optical coupler layers 1510 and / or 1512 in semiconductor photonic device 1500 because optical coupler layer 1508 is located side by side with optical coupler layers 1510 and / or 1512 in the y-direction in semiconductor photonic device 1500.

[0200] The optical coupler layer 1510 is adjacent to the optical coupler layer 1512 in the dielectric layer 1506. In some embodiments, the optical coupler layer 1510 and the optical coupler layer 1512 are horizontally adjacent in the semiconductor photonic device 1500. Therefore, the optical coupler layers 1510 and 1512 can be arranged in a direction approximately parallel to the top surface of the dielectric layer 1506. For example, in the semiconductor photonic device 1500, the optical coupler layer 1510 is adjacent to the optical coupler layer 1512 in the x-direction.

[0201] Optical coupler layers 1508, 1510, and 1512 have different top view profiles. For example, optical coupler layer 1508 may include segment 1508a having a top view profile similar to optical coupler layer 1310 and another segment 1508b having a top view profile similar to optical coupler layer 1408. Optical coupler layer 1510 may have a top view profile similar to optical coupler layer 1308, and optical coupler layer 1512 may have a top view profile similar to optical coupler layer 1410. Segments 1508c and 1508d of optical coupler layer 1508 (corresponding to segments 1310a and 1310b of optical coupler layer 1310) may be located above segments 1510a and 1510b of optical coupler layer 1510 (corresponding to segments 1308a and 1308b of optical coupler layer 1310). Segment 1508e of optical coupler layer 1508 (corresponding to segment 1408a of optical coupler layer 1408) may be located over the gap between optical coupler layers 1510 and 1512. Segment 1508f of optical coupler layer 1508 (corresponding to segment 1408b of optical coupler layer 1408) may be located over segment 1512b of optical coupler layer 1512 (corresponding to segment 1410b of optical coupler layer 1410). Segment 1512a (corresponding to segment 1410a of optical coupler layer 1410) may extend laterally outward from segment 1508f.

[0202] Additionally and / or alternatively, optical coupler layers 1508, 1510, and / or 1512 may be formed of different material compositions for different top view profiles. The material compositions of optical coupler layers 1508, 1510, and / or 1512 may be selected such that the respective refractive indices of optical coupler layers 1508, 1510, and / or 1512 promote compatibility of optical coupler layers 1508, 1510, and / or 1512 for optical coupling purposes. For example, the material composition of optical coupler layer 1508 may be selected such that optical coupler layer 1508 has a first refractive index, and the material compositions of optical coupler layers 1510 and 1512 may be selected such that optical coupler layers 1510 and 1512 have a second refractive index greater than the first refractive index, which enables optical signals to be transferred between optical coupler layers 1508 and 1510 and between optical coupler layers 1508 and 1512 with low optical losses.

[0203] The material composition of the optical coupler layer 1508 may include one or more dielectric materials having a low refractive index, and the material composition of the optical coupler layers 1510 and 1512 may include one or more semiconductor materials having a greater refractive index than the material composition of the optical coupler layer 1508. Examples of dielectric materials for the optical coupler layer 1508 include silicon nitride materials (Si x N y , such as Si3N4), aluminum oxide materials (Al xO y , such as Al2O3), aluminum nitride materials (AlN), hafnium oxide materials (HfO x , such as HfO2), titanium oxide materials (TiO x , such as TiO2), zinc oxide materials (ZnO) and / or germanium oxide materials (GeO x , such as GeO 2 ), among other examples. Examples of semiconductor materials for optical coupler layers 1510 and 1512 include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0204] Combination Fig.15A The combinations of arrangements, top view profiles, and / or material compositions shown and described are examples, and other combinations are within the scope of the disclosed embodiments. For example, other combinations of optical coupler layers described herein can be combined in a multilayer coupler structure to achieve efficient and low-loss optical coupling for optical signals of one or more wavelengths.

[0205] Fig. 15B The semiconductor photonic device 1500 is shown in the x-direction. Fig.15A FIG. 1 is a cross-sectional view of line PP through the center of optical coupler layers 1508, 1510, and 1512. Fig. 15B As shown in , the semiconductor photonic device 1500 may also include a semiconductor substrate 1514, and the dielectric layer 1506 is located on the semiconductor substrate 1514. The semiconductor substrate 1514 may include a semiconductor substrate, such as a silicon (Si) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. Optical coupler layers 1508 and 1510 are arranged in the semiconductor photonic device 1500 in the z direction, and the z direction is approximately perpendicular to the surface of the semiconductor substrate 1514. For example, the optical coupler layer 1508 is located on the optical coupler layer 1510. Optical coupler layers 1508 and 1512 are arranged in the semiconductor photonic device 1500 in the z direction. For example, the optical coupler layer 1508 is located on the optical coupler layer 1512. Optical coupler layers 1510 and 1512 are arranged in the semiconductor photonic device 1500 in the x direction. For example, the optical coupler layer 1510 is located adjacent to the optical coupler layer 1512. Alternatively, optical coupler layers 1508, 1510, and / or 1512 may be arranged in a different configuration.

[0206] Optocoupler layers 1508 and 1510 are separated by dielectric layer 1506 such that optical coupler layers 1508 and 1510 are not in direct contact with each other. Optocoupler layers 1508 and 1512 are separated by dielectric layer 1506 such that optical coupler layers 1508 and 1512 are not in direct contact with each other. Optocoupler layers 1510 and 1512 are separated by dielectric layer 1506 such that optical coupler layers 1510 and 1512 are not in direct contact with each other.

[0207] like Fig. 15B As further shown in FIG. 1 , the arrangement, top view profile, and / or material composition of optical coupler layers 1508, 1510, and / or 1512 enable optical signals to be transmitted between optical coupler layers 1508 and 1510 and between optical coupler layers 1508 and 1512. For example, an optical signal may propagate from optical signal I / O 1504 to optical coupler layer 1510 along optical signal path 1516, may transfer from optical coupler layer 1510 (e.g., upward) to optical coupler layer 1508, may transfer from optical coupler layer 1508 (e.g., downward) to optical coupler layer 1512, and may be provided to a PIC (not shown) from optical coupler layer 1512. Thus, optical coupler layer 1510 is optically coupled to optical signal I / O 1504, optical coupler layer 1508 is optically coupled to optical coupler layers 1510 and 1512, and optical coupler layer 1512 is optically coupled to optical coupler layer 1508.

[0208] Combination FIG. 4A to FIG. 4E and / or 7A to 7E Similar semiconductor processing operations and / or techniques described can be used to form semiconductor photonic device 1500. For example, optical coupler layers 1510 and 1512 can be formed in the semiconductor layer above dielectric layer 1506. Additional material for dielectric layer 1506 can be deposited to seal optical coupler layers 1510 and 1512. Optical coupler layer 1508 can be formed above optical coupler layers 1510 and 1512 in dielectric layer 1506. Additional material for dielectric layer 1506 can be deposited to seal optical coupler layer 1508.

[0209] As shown above, provide Fig.15A and Fig. 15B As an example. Other examples can be related to Fig.15A and Fig. 15B The content described is different.

[0210] FIG. 16A to FIG. 16F is a diagram of an exemplary semiconductor photonic device 1600 described herein. Fig.16A 1 shows a cross-sectional view of a semiconductor photonic device 1600. Fig.16A As shown in , the semiconductor photonic device 1600 may include a plurality of multilayer coupler structures 1602a and 1602b optically coupled to a PIC 1604 of the semiconductor photonic device 1600. The multilayer coupler structures 1602a and 1602b may be configured to provide optical signals to and / or from the PIC 1604 for high bandwidth optical communication. The PIC 1604 may include an optical modulator, an optical amplifier, and / or another type of PIC.

[0211] The multilayer coupler structures 1602a and 1602b and the PIC 1604 may be included in a dielectric layer 1606 of the semiconductor photonic device 1600. The dielectric layer 1606 may include one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y ), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0212] The multilayer coupler structures 1602a and 1602b each include a plurality of optical coupler layers. For example, the multilayer coupler structure 1602a includes a plurality of optical coupler layers 1608a-1608c and 1610a-1610c arranged vertically (e.g., arranged in a z-direction approximately perpendicular to a semiconductor substrate 1612 of the semiconductor photonic device 1600). The multilayer coupler structure 1602b includes a plurality of optical coupler layers 1608d-1608f and 1610d-1610f arranged vertically (e.g., arranged in a z-direction approximately perpendicular to a semiconductor substrate 1612 of the semiconductor photonic device 1600). The optical coupler layers 1608a-1608f and 1610a-1610f can each include a waveguide that enables optical signals to be transferred between and through the optical coupler layers 1608a-1608f and 1610a-1610f. The optical coupler layers 1608a-1608f and 1610a-1610f are separated by the dielectric layer 1606 so that the optical coupler layers 1608a-1608f and 1610a-1610f are not in direct contact with each other. The optical coupler layers 1608a-1608f and 1610a-1610f can each include one or more arrangements, top view profiles, and / or material compositions of the optical coupler layers described herein.

[0213] FIG. 16B to FIG. 16F An example of an optical signal path to and / or from PIC 1604 through multilayer coupler structures 1602a and 1602b is shown. Fig. 16B, optical signal path 1614 includes an optical signal propagating through optical coupler layer 1608c of multilayer coupler structure 1602a to optical coupler layer 1610a of multilayer coupler structure 1602a, and propagating from optical coupler layer 1610a to PIC 1604. Thus, optical signal path 1614 includes a multilayer optical signal path. As another example, optical signal path 1616 includes an optical signal propagating through optical coupler layer 1608d of multilayer coupler structure 1602b to optical coupler layer 1610e of multilayer coupler structure 1602b, and propagating from optical coupler layer 1610e to PIC 1604. Thus, optical signal path 1616 includes a multilayer optical signal path.

[0214] like FIG. 16C to FIG. 16F As shown in the example of FIG. 1 , the multilayer coupler structures 1602a and 1602b can enable bidirectional or two-way transmission of optical signals through the multilayer coupler structures 1602a and / or 1602b. Fig. 16C As shown in the example of FIG. 1 , optical signals may propagate through the multilayer coupler structure 1602a along opposing optical signal paths 1618 and 1620 (eg, along optical coupler layers 1610c and 1610d). Fig.16D As shown in the example of FIG. 1 , the optical signal can propagate through the multilayer coupler structure 1602b along opposing optical signal paths 1622 and 1624 (eg, along optical coupler layers 1608e and 1610e). Fig.16E As shown in the example of FIG. 1 , the optical signal can propagate through the multilayer coupler structure 1602a along opposing optical signal paths 1626 and 1628 (eg, along optical coupler layers 1608b, 1610b, and 1610c). Fig.16F As shown in the example of , optical signals can propagate through the multilayer coupler structure 1602b along opposing optical signal paths 1630 and 1632 (eg, along optical coupler layers 1608e and 1610f).

[0215] As shown above, provide FIG. 16A to FIG. 16F As an example. Other examples can be related to FIG. 16A to FIG. 16F The content described is different.

[0216] Fig.17 1700 is a diagram of exemplary components of a device 1700 described herein. In some embodiments, one or more of the semiconductor processing tools 102-114 and / or the wafer / die transport tool 116 may include one or more devices 1700 and / or one or more components of the device 1700. Fig.17 As shown in , device 1700 may include a bus 1710 , a processor 1720 , a memory 1730 , an input component 1740 , an output component 1750 , and / or a communication component 1760 .

[0217] The bus 1710 may include one or more components that enable wired and / or wireless communication between components of the device 1700. The bus 1710 may include one or more components that enable wired and / or wireless communication between components of the device 1700. Fig.17 Two or more components of the computer system 1710 are coupled together, such as via operational coupling, communication coupling, electronic coupling, and / or electrical coupling. For example, bus 1710 may include electrical connections (e.g., wires, traces, and / or leads) and / or wireless buses. Processor 1720 may include a central processing unit, a graphics processing unit, a microprocessor, a controller, a microcontroller, a digital signal processor, a field programmable gate array, an application-specific integrated circuit, and / or another type of processing component. Processor 1720 may be implemented in hardware, firmware, or a combination of hardware and software. In some embodiments, processor 1720 may include one or more processors that can be programmed to implement one or more operations or processes described elsewhere herein.

[0218] The memory 1730 may include volatile and / or non-volatile memory. For example, the memory 1730 may include a random access memory (RAM), a read-only memory (ROM), a hard drive, and / or another type of memory (e.g., flash memory, magnetic memory, and / or optical memory). The memory 1730 may include an internal memory (e.g., RAM, ROM, or hard drive) and / or a removable memory (e.g., removable via a universal serial bus connection). The memory 1730 may be a non-temporary computer-readable medium. The memory 1730 may store information, one or more instructions, and / or software (e.g., one or more software applications) related to the operation of the device 1700. In some embodiments, the memory 1730 may include one or more memories such as coupled (e.g., communicatively coupled) to one or more processors (e.g., processor 1720) via bus 1710. The communicatively coupled between the processor 1720 and the memory 1730 may enable the processor 1720 to read and / or process information stored in the memory 1730 and / or store information in the memory 1730.

[0219] Input assembly 1740 can enable device 1700 to receive input, such as user input and / or sensed input. For example, input assembly 1740 can include touch screen, keyboard, keypad, mouse, button, microphone, switch, sensor, GPS sensor, GNSS sensor, accelerometer, gyroscope and / or actuator. Output assembly 1750 can enable device 1700 to provide output, such as via display, speaker and / or light emitting diode. Communication assembly 1760 can enable device 1700 to communicate with other devices via wired connection and / or wireless connection. For example, communication assembly 1760 can include receiver, transmitter, transceiver, modem, network interface card and / or antenna.

[0220] Device 1700 can implement one or more operations or processes described herein. For example, a non-transitory computer-readable medium (e.g., memory 1730) can store an instruction group (e.g., one or more instructions or codes) for execution by processor 1720. Processor 1720 can execute the instruction group to implement one or more operations or processes described herein. In some embodiments, the execution of the instruction group by one or more processors 1720 causes one or more processors 1720 and / or device 1700 to implement one or more operations or processes described herein. In some embodiments, hard-wired circuits can be used instead of instructions or in combination with instructions to implement one or more operations or processes described herein. Additionally or optionally, processor 1720 can be configured to implement one or more operations or processes described herein. Therefore, the embodiments described herein are not limited to any specific combination of hardware circuits and software.

[0221] supply Fig.17 The number and arrangement of components shown in FIG. 1 are provided as examples. Device 1700 may include Fig.17 Additional components, fewer components, different components, or differently arranged components than those shown in . Additionally or alternatively, a component group (eg, one or more components) of device 1700 may implement one or more functions described as being implemented by another component group of device 1700.

[0222] Fig.18 is a flow chart of an exemplary process 1800 associated with forming a semiconductor photonic device described herein. In some embodiments, Fig.18 One or more process blocks of are implemented using one or more semiconductor processing tools (e.g., one or more of semiconductor processing tools 102-114). Additionally or alternatively, Fig.18 One or more process blocks of may be implemented using one or more components of the device 1700 , such as the processor 1720 , the memory 1730 , the input component 1740 , the output component 1750 , and / or the communication component 1760 .

[0223] like Fig.18As shown in , process 1800 may include forming a dielectric layer of a semiconductor photonic device (block 1810). For example, one or more semiconductor processing tools 102-114 may be used to form a dielectric layer (e.g., one or more of dielectric layers 206, 506, 806, 906, 1006, 1106, 1206, 1306, 1406, 1506, and / or 1606) of a semiconductor photonic device (e.g., one or more of semiconductor photonic devices 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500, and / or 1600) as described herein.

[0224] like Fig.18 As further shown in the process 1800, the process 1800 may include forming a first optical coupler layer of the multilayer coupler structure in the dielectric layer (block 1820). For example, one or more of the semiconductor processing tools 102-114 may be used to form a first optical coupler layer (e.g., one or more of the optical coupler layers 210, 508, 810, 910, 1010, 1110, 1210, 1310, 1410, 1510, 1512, and / or 1608a-1608f) of the multilayer coupler structure (e.g., one or more of the multilayer coupler structures 202, 502, 802, 902, 1002, 1102, 1202, 1302, 1402, 1502, and / or 1602) in the dielectric layer as described herein. In some embodiments, the first optical coupler layer may have a first cross-sectional thickness.

[0225] like Fig.18 As further shown in the process 1800, the process 1800 may include forming a second optical coupler layer of the multi-layer coupler structure adjacent to the first optical coupler layer in the dielectric layer (block 1830). For example, one or more of the semiconductor processing tools 102-114 may be used to form a second optical coupler layer of the multi-layer coupler structure adjacent to the first optical coupler layer in the dielectric layer (e.g., one or more of the optical coupler layers 208, 510, 808, 908, 1008, 1108, 1208, 1308, 1408, 1508, and / or 1610a-1610f), as described herein. In some embodiments, the second optical coupler layer has a second cross-sectional thickness greater than the first cross-sectional thickness.

[0226] Process 1800 may include additional embodiments, such as any single embodiment or any combination of embodiments described below and / or in connection with one or more other processes described elsewhere herein.

[0227] In a first embodiment, forming a second optical coupler layer includes: forming a first segment of the second optical coupler layer (e.g., segment 808a, segment 908a); and forming a plurality of second segments (e.g., segment 808c, segment 908c) adjacent to and spaced apart from the first segment in a top view of the second optical coupler layer on an opposite side of the first segment.

[0228] In a second embodiment, alone or in combination with the first embodiment, forming a second optical coupler layer includes: forming a first segment having a uniform top view width (e.g., segment 1008b, segment 1108b); forming a plurality of second segments (e.g., segment 1008c, segment 1108c); and forming a third segment (e.g., segment 1008a, segment 1108a) between the first segment and the plurality of second segments and coupled to the first segment and the plurality of second segments.

[0229] In a third embodiment, alone or in combination with one or more of the first and second embodiments, a top view width of the third segment increases from the first segment to the plurality of second segments.

[0230] In a fourth embodiment, alone or in combination with one or more of the first to third embodiments, forming the second optical coupler layer includes forming the second optical coupler layer such that the second optical coupler layer partially overlaps the first optical coupler layer.

[0231] In a fifth embodiment, alone or in combination with one or more of the first to fourth embodiments, forming the second optical coupler layer includes forming the second optical coupler layer to have a top view length greater than a top view length of the first optical coupler layer.

[0232] Although Fig.18 An exemplary block diagram of process 1800 is shown, but in some embodiments, process 1800 includes Fig.18 Additional blocks, fewer blocks, different blocks, or differently arranged blocks than those depicted in process 1800 may be implemented in parallel. Additionally or alternatively, two or more of the blocks of process 1800 may be implemented in parallel.

[0233] In this way, the semiconductor photonic device includes a multilayer coupler structure. The multilayer coupler structure includes multiple optical coupler layers, which enables the characteristics of the optical coupler layers (e.g., material, refractive index, shape, size, positioning) to be configured to achieve effective optical coupling for a wide spectrum of optical wavelengths. This enables the multilayer coupler structure to process wide-bandwidth optical signals, which enables the semiconductor photonic device to support high-bandwidth optical communication applications. In addition, the optical coupler layers of the multilayer coupler device enable the performance of the multilayer coupler structure to be improved using less complex and lower-cost semiconductor manufacturing processes and technologies. In addition, the optical coupler layers of the multilayer coupler structure enable the multilayer coupler structure to handle bidirectional transmission of optical signals, thereby enabling optical signals to be transmitted between the various layers of the semiconductor photonic device.

[0234] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a dielectric layer. The semiconductor photonic device includes: a multilayer optical coupler located in the dielectric layer, the multilayer optical coupler including: a first optical coupler layer having a first top view profile; and a second optical coupler layer adjacent to the first optical coupler layer having a second top view profile different from the first top view profile.

[0235] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a dielectric layer. The semiconductor photonic device includes: a multilayer optical coupler located in the dielectric layer, the multilayer optical coupler including a first optical coupler layer and a second optical coupler layer. The first optical coupler layer includes a first end adjacent to an optical signal input and a second end opposite to the first end. The top view width of the first optical coupler layer increases from the first end to a midpoint between the first end and the second end. The top view width of the first optical coupler layer decreases between the midpoint and the second end. The second optical coupler layer is adjacent to the first optical coupler layer and includes a third end adjacent to the optical signal input and a fourth end opposite to the third end.

[0236] As described in more detail above, some embodiments described herein provide methods. The method includes forming a dielectric layer of a semiconductor photonic device. The method includes forming a first optical coupler layer having a first cross-sectional thickness in the dielectric layer. The method includes forming a second optical coupler layer adjacent to the first optical coupler layer in the dielectric layer, the second optical coupler layer having a second cross-sectional thickness greater than the first cross-sectional thickness.

[0237] Some embodiments of the present application provide a semiconductor photonic device, comprising: a dielectric layer; and a multilayer optical coupler located in the dielectric layer, comprising: a first optical coupler layer having a first top view profile; and a second optical coupler layer adjacent to the first optical coupler layer, having a second top view profile different from the first top view profile.

[0238] In some embodiments, the first optical coupler layer is optically coupled to an optical signal input / output; and wherein the second optical coupler layer is optically coupled to the first optical coupler layer. In some embodiments, the multilayer optical coupler further comprises: a third optical coupler layer adjacent to the second optical coupler layer, wherein the second optical coupler layer is located between the first optical coupler layer and the third optical coupler layer, and wherein the third optical coupler layer is optically coupled to the second optical coupler layer. In some embodiments, the multilayer optical coupler further comprises: a third optical coupler layer adjacent to the second optical coupler layer, wherein the second optical coupler layer is located below a first segment of the first optical coupler layer, wherein the third optical coupler layer is located below a second segment of the first optical coupler layer, and wherein the third optical coupler layer is optically coupled to the first optical coupler layer. In some embodiments, the first optical coupler layer comprises a first material composition; and wherein the second optical coupler layer comprises a second material composition different from the first material composition. In some embodiments, the first material composition has a first refractive index; wherein the second material composition has a second refractive index; and wherein the first refractive index and the second refractive index are different refractive indices. In some embodiments, the first material composition includes a semiconductor material; and wherein the second material composition includes a dielectric material. In some embodiments, the first optical coupler layer and the second optical coupler layer are arranged in a direction approximately perpendicular to a substrate of the semiconductor photonic device. In some embodiments, the multilayer optical coupler is a first multilayer optical coupler included in the semiconductor photonic device; and wherein the semiconductor photonic device further includes: a photonic integrated circuit located in the dielectric layer; and a second multilayer optical coupler including: a third optical coupler layer having a third top view profile; and a fourth optical coupler layer adjacent to the third optical coupler layer having a fourth top view profile different from the third top view profile.

[0239] Other embodiments of the present application provide a semiconductor photonic device, comprising: a dielectric layer; and a multilayer optical coupler, located in the dielectric layer, comprising: a first optical coupler layer, comprising: a first end, adjacent to an optical signal input / output (I / O); and a second end, opposite to the first end, wherein a top view width of the first optical coupler layer increases from the first end to a midpoint between the first end and the second end, and wherein the top view width of the first optical coupler layer decreases between the midpoint and the second end; and a second optical coupler layer, adjacent to the first optical coupler layer, comprising: a third end, adjacent to the optical signal input / output; and a fourth end, opposite to the third end.

[0240] In some embodiments, the first sidewall of the first optical coupler layer between the first end and the midpoint is linear in the top view of the multilayer optical coupler; and wherein the second sidewall of the first optical coupler layer between the second end and the midpoint is linear in the top view of the multilayer optical coupler. In some embodiments, the first sidewall of the first optical coupler layer between the first end and the midpoint is linear in the top view of the multilayer optical coupler; and wherein the second sidewall of the first optical coupler layer between the second end and the midpoint is curved in the top view of the multilayer optical coupler. In some embodiments, the top view width of the second optical coupler layer increases from the third end to the midpoint of the second optical coupler layer between the third end and the fourth end, and wherein the top view width of the second optical coupler layer increases between the midpoint and the fourth end. In some embodiments, the top view width of the second optical coupler layer at the third end is greater than the top view width of the second optical coupler layer at the fourth end.

[0241] Some other embodiments of the present application provide a method, comprising: forming a dielectric layer of a semiconductor photonic device; forming a first optical coupler layer having a first cross-sectional thickness in the dielectric layer; and forming a second optical coupler layer adjacent to the first optical coupler layer in the dielectric layer, the second optical coupler layer having a second cross-sectional thickness greater than the first cross-sectional thickness.

[0242] In some embodiments, forming the second optical coupler layer includes: forming a first segment of the second optical coupler layer; and forming a plurality of second segments adjacent to and spaced apart from the first segment in a top view of the second optical coupler layer on an opposite side of the first segment. In some embodiments, forming the second optical coupler layer includes: forming a first segment having a uniform top view width; forming a plurality of second segments; and forming a third segment coupled to the first segment and the plurality of second segments between the first segment and the plurality of second segments. In some embodiments, the top view width of the third segment increases from the first segment to the plurality of second segments. In some embodiments, forming the second optical coupler layer includes: forming the second optical coupler layer so that the second optical coupler layer partially overlaps the first optical coupler layer. In some embodiments, forming the second optical coupler layer includes: forming the second optical coupler layer to a top view length greater than a top view length of the first optical coupler layer.

[0243] As used herein, "satisfying a threshold" may (depending on the context) refer to a value greater than a threshold, greater than or equal to a threshold, less than a threshold, less than or equal to a threshold, equal to a threshold, not equal to a threshold, etc.

[0244] The terms "approximately" and "substantially" may refer to a value of a given amount that varies within ±5% of the value (e.g., ±1%, ±2%, ±3%, ±4%, ±5% of the value). These values ​​are merely examples and are not intended to be limiting. It should be understood that in view of the embodiments of the present disclosure, the terms "approximately" and "substantially" may refer to a percentage of the value of a given amount.

[0245] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent constructions do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A semiconductor photonic device, comprising: Dielectric layer; as well as A multilayer optical coupler, located in the dielectric layer, comprising: a first optical coupler layer having a first top view profile; as well as A second optical coupler layer, adjacent to the first optical coupler layer, has a second top view profile different from the first top view profile.

2. The semiconductor photonic device according to claim 1, wherein: The first optical coupler layer is optically coupled to an optical signal input / output; and The second optical coupler layer is optically coupled to the first optical coupler layer.

3. The semiconductor photonic device according to claim 2, wherein: The multilayer optical coupler further comprises: a third optical coupler layer, adjacent to the second optical coupler layer, wherein the second optical coupler layer is located between the first optical coupler layer and the third optical coupler layer, and The third optical coupler layer is optically coupled to the second optical coupler layer.

4. The semiconductor photonic device according to claim 2, wherein: The multilayer optical coupler further comprises: a third optical coupler layer, adjacent to the second optical coupler layer, wherein the second optical coupler layer is located below the first segment of the first optical coupler layer, wherein the third optical coupler layer is located below the second segment of the first optical coupler layer, and The third optical coupler layer is optically coupled to the first optical coupler layer.

5. The semiconductor photonic device according to claim 1, wherein: The first optical coupler layer comprises a first material composition; and The second optical coupler layer includes a second material composition different from the first material composition.

6. The semiconductor photonic device according to claim 5, wherein: The first material composition has a first refractive index; wherein the second material composition has a second refractive index; and The first refractive index and the second refractive index are different refractive indices.

7. The semiconductor photonic device according to claim 5, wherein: The first material composition includes a semiconductor material; and Wherein, the second material composition includes a dielectric material.

8. The semiconductor photonic device according to claim 1, wherein: The first optical coupler layer and the second optical coupler layer are arranged in a direction approximately perpendicular to a substrate of the semiconductor photonic device.

9. A semiconductor photonic device, comprising: Dielectric layer; as well as A multilayer optical coupler, located in the dielectric layer, comprising: A first optical coupler layer, comprising: A first end adjacent to an optical signal input / output (I / O); and a second end, opposite to the first end, wherein a top view width of the first optical coupler layer increases from the first end to a midpoint between the first end and the second end, and wherein the top view width of the first optical coupler layer decreases between the midpoint and the second end; and A second optical coupler layer, adjacent to the first optical coupler layer, comprises: a third end, adjacent to the optical signal input / output; and The fourth end is opposite to the third end.

10. A method of forming a semiconductor photonic device, comprising: forming dielectric layers of semiconductor photonic devices; forming a first optical coupler layer having a first cross-sectional thickness in the dielectric layer; as well as A second optical coupler layer is formed in the dielectric layer adjacent to the first optical coupler layer, the second optical coupler layer having a second cross-sectional thickness greater than the first cross-sectional thickness.

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