Machining system and machining method

Real-time monitoring of the molten pool and adjustment of processing parameters through the camera device solves the problem of inaccurate size and shape control of the molten pool in the existing technology, and achieves a high-precision and high-efficiency processing process.

CN119343199APending Publication Date: 2025-01-21NIKON CORP
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Patent Information

Application Number
CN202280096944.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2022-06-09
Publication Date
2025-01-21

AI Technical Summary

Technical Problem

Existing machining systems have difficulty in accurately controlling the size and shape of the molten pool, resulting in inadequate machining accuracy and efficiency.

Method used

A camera device is used to capture the molten pool, generate image information of the molten pool, and adjust the parameters of the processing device through the control device to control the size and shape of the molten pool in real time to achieve the target size.

Benefits of technology

It achieves precise control of the size and shape of the molten pool, improves processing accuracy and efficiency, and ensures product quality consistency.

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Abstract

This processing system is provided with: a processing device that forms a molten pool on an object by irradiating the object with an energy beam, and processes the object by supplying a molding material to the molten pool; an image capturing device capable of generating a melting pool image by capturing an image of the melting pool; and a control device that generates molten pool image information on the basis of the molten pool image, and that controls the processing device so that the size of the molten pool region becomes a target size on the basis of the molten pool image information. The molten pool image information is generated on the basis of the plurality of molten pool images, and the control device changes the imaging conditions of the imaging device for imaging the molten pool on the basis of the processing conditions of the object.
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Description

Technical Field

[0001] The present invention relates to the technical field of, for example, a processing system and a processing method capable of processing an object. Background Art

[0002] An example of a processing system for processing an object is described in Patent Document 1. One of the technical issues of such a processing system is how to process the object appropriately.

[0003] Background Art Literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2016 / 0311059 Summary of the invention

[0006] According to a first aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on an object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information so that the size of the molten pool area becomes a target size; and the molten pool image information is generated based on a plurality of the molten pool images photographed by the camera device, and the control device changes the photographing conditions of the camera device used to photograph the molten pool based on the processing conditions of the processing device for processing the object.

[0007] According to a second aspect, a processing system is provided, comprising: a processing device, comprising a processing head and a position changing device, wherein the processing head forms a molten pool on the object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool, and the position changing device is capable of changing the irradiation position of the energy beam relative to the processing head; a camera device, which is equipped on the processing head and is capable of generating a molten pool image by photographing the molten pool formed by the processing device; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information so that the size of the molten pool area becomes a target size; and the molten pool image information is generated based on a plurality of the molten pool images photographed by the camera device.

[0008] According to a third aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on an object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which calculates the size of a molten pool area in the molten pool image based on a comparison result of a signal value of the molten pool image and a predetermined threshold value, and controls the processing device in a manner that makes the size of the molten pool area a target size; and the control device changes the predetermined threshold value based on the processing conditions under which the processing device processes the object.

[0009] According to a fourth aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on an object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information so that the size of the molten pool area becomes a target size; and the control device changes the target size based on the processing conditions under which the processing device processes the object.

[0010] According to the fifth aspect, there is provided a processing system comprising: a processing device for forming a molten pool on an object by irradiating the object with an energy beam, and for processing the object by supplying a molding material to the molten pool; an imaging device for generating a plurality of images by photographing an area including the molten pool for a plurality of times; and a control device for adding signal values ​​of each pixel of the plurality of images, and detecting at least one of a molten pool area and a non-molten pool area in the image based on a comparison result of the addition result of each pixel with a predetermined threshold value, wherein at least one of luminous light and reflected light outside the molten pool is captured in the non-molten pool area.

[0011] According to the sixth aspect, a processing system is provided, comprising: a processing device for forming a molten pool on an object by irradiating the object with an energy beam, and for processing the object by supplying a molding material to the molten pool; an imaging device for multiple-exposing an area including the molten pool; and a control device for detecting at least one of a molten pool area and a non-molten pool area in an image generated by the multiple exposures by comparing the result of the multiple exposures performed by the imaging device with a predetermined threshold value, wherein at least one of luminous light and reflected light outside the molten pool is captured in the non-molten pool area.

[0012] According to the seventh aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on an object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool; a camera device, which can generate a molten pool image by photographing the molten pool; a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information so that the size of the molten pool area becomes a target size; and a recording device, which establishes an association with the jitter condition of the energy beam to record information related to the target size of the molten pool; and the control device controls the processing device based on the target size of the molten pool obtained from the recording device.

[0013] According to the eighth aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on an object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device; and the control device can obtain shape information related to the molten pools continuously formed at different positions by the energy beam based on the molten pool image generated by the camera device, and control the processing device based on the shape information.

[0014] According to the ninth aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on an object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device; and the control device can obtain center position information of molten pools continuously formed at different positions by the energy beam based on the molten pool image generated by the camera device, and control the processing device based on the center position information.

[0015] According to the tenth aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on an object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information so that the size of the molten pool area becomes a target size; and the molten pool image information is generated based on the molten pool image, and the molten pool image is generated by multiple exposures performed by the camera device, and the control device changes the conditions of the multiple exposures performed by the camera device based on the processing conditions of the processing device for processing the object.

[0016] According to the eleventh aspect, a processing system is provided, comprising: a processing device, comprising a processing head and a position changing device, wherein the processing head forms a molten pool on the object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool, and the position changing device is capable of changing the irradiation position of the energy beam relative to the processing head; a camera device, which is equipped on the processing head and is capable of generating a molten pool image by photographing the molten pool formed by the processing device; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information so that the size of the molten pool area becomes a target size; and the molten pool image information is generated based on multiple exposures performed by the camera device.

[0017] According to the twelfth aspect, a processing system is provided, comprising: a processing device, which irradiates an energy beam to an object to form a molten pool on the object; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information; and the molten pool image information is generated based on a plurality of the molten pool images photographed by the camera device, and the control device changes the photographing conditions of the camera device for photographing the molten pool based on the processing conditions of the processing device for processing the object.

[0018] According to the thirteenth aspect, there is provided a processing system, comprising: a processing device, comprising a processing head and a position changing device, wherein the processing head irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object, and the position changing device is capable of changing the irradiation position of the energy beam relative to the processing head; a camera device, which is equipped on the processing head and is capable of generating a molten pool image by photographing the molten pool formed by the processing device; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information.

[0019] According to the fourteenth aspect, there is provided a processing system, comprising: a processing device, which irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which controls the processing device based on a comparison result of a signal value of the molten pool image with a predetermined threshold value; and the control device changes the predetermined threshold value based on the processing conditions under which the processing device processes the object.

[0020] According to the fifteenth aspect, a processing system is provided, comprising: a processing device, which irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information so that the size of the molten pool area becomes a target size; the control device changes the target size based on the processing conditions under which the processing device processes the object.

[0021] According to the sixteenth aspect, there is provided a processing system, comprising: a processing device, which irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object; a camera device, which can generate a plurality of images by photographing an area including the molten pool for multiple times; and a control device, which detects at least one of a molten pool area and a non-molten pool area in the image based on the addition result of the signal value of each pixel of the plurality of images, wherein the non-molten pool area includes at least one of luminous light and reflected light outside the molten pool.

[0022] According to the seventeenth aspect, there is provided a processing system comprising: a processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; an imaging device for multiple-exposing an area including the molten pool; and a control device for detecting at least one of a molten pool area and a non-molten pool area in an image generated by the multiple exposures based on a comparison result of the multiple exposures performed by the imaging device with a predetermined threshold value, wherein at least one of luminous light and reflected light outside the molten pool is captured in the non-molten pool area.

[0023] According to the eighteenth aspect, a processing system is provided, comprising: a processing device, which irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object; a camera device, which can generate a molten pool image by photographing the molten pool; a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information; and a recording device, which establishes an association with the jitter condition of the energy beam and records information related to a target size of the molten pool; and the control device controls the processing device based on the target size of the molten pool obtained from the recording device.

[0024] According to the nineteenth aspect, a processing system is provided, comprising: a processing device, which irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device; and the control device can obtain shape information related to the molten pools continuously formed at different positions by the energy beam based on the molten pool image generated by the camera device, and control the processing device based on the shape information.

[0025] According to the twentieth aspect, a processing system is provided, comprising: a processing device, which irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device; and the control device can obtain the center position information of the molten pools continuously formed at different positions by the energy beam based on the molten pool image generated by the camera device, and control the processing device based on the center position information.

[0026] According to the twenty-first aspect, there is provided a processing system, comprising: a processing device, which irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information; and the molten pool image information is generated based on the molten pool image, and the molten pool image is generated by multiple exposures performed by the camera device, and the control device changes the conditions of the multiple exposures performed by the camera device based on the processing conditions of the processing device for processing the object.

[0027] According to the twenty-second aspect, there is provided a processing system, comprising: a processing device, comprising a processing head and a position changing device, wherein the processing head irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object, and the position changing device is capable of changing the irradiation position of the energy beam relative to the processing head; a camera device, which is provided on the processing head and is capable of generating a molten pool image by photographing the molten pool formed by the processing device; and a control device, which generates molten pool image information based on the molten pool image generated by the camera device, and controls the processing device based on the molten pool image information; and the molten pool image information is generated based on multiple exposures performed by the camera device.

[0028] According to the twenty-third aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on the object by irradiating an energy beam to the object, and forms a molded object on the object along a target trajectory; a camera device, which can generate a molten pool image by photographing the molten pool; and a control device, which controls the processing device based on the molten pool image generated by the camera device; and forming the molded object on the object along the target trajectory includes moving the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory, and the control device controls the processing device based on a plurality of molten pool images photographed by the camera device.

[0029] According to the twenty-fourth aspect, a processing system is provided, comprising: a processing device, which forms a molten pool on an object by irradiating an energy beam to the object; and a camera device, which can generate a molten pool image by photographing the molten pool; and the camera device can photograph a molten pool appearing at a first position at a first moment, and a molten pool appearing at a second position different from the first position at a second moment different from the first moment.

[0030] The effects and other advantages of the present invention will become apparent from the embodiments described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a cross-sectional view showing the structure of the processing system according to the present embodiment.

[0032] Figure 2 It is a block diagram showing the configuration of the processing system according to the present embodiment.

[0033] Figure 3 It is a perspective view showing the structure of the irradiation optical system.

[0034] Figure 4 (a) is a top view showing the moving trajectory of the target irradiation area within the processing unit area. Figure 4 (b) is a top view showing the moving trajectory of the target irradiation area on the modeling surface.

[0035] Figure 5 (a) and Figure 5 (b) are top views showing the moving trajectory of the target irradiation area within the processing unit area, Figure 5 (c) is a top view showing the moving trajectory of the target irradiation area on the modeling surface.

[0036] Figure 6 (a) to Figure 6 (e) are cross-sectional views showing the situation when a certain area on the workpiece is irradiated with processing light and a modeling material is supplied.

[0037] Figure 7 (a) is a top view showing the target movement trajectory of the processing unit area. Figure 7 (b) indicates that the processing unit area is along Figure 7 (a) is a top view of a linear object formed on a modeling surface when the target moving trajectory is moved.

[0038] Figure 8 (a) to Figure 8 (c) are cross-sectional views showing the process of modeling a three-dimensional structure.

[0039] Fig. 9 This is a flowchart showing the flow of the melt pool feedback control operation based on the melt pool image.

[0040] Fig.10 Represents the melt pool image.

[0041] Fig.11 represents an added image generated by adding (ie, synthesizing) a plurality of melt pool images.

[0042] Fig.12 It is a timing diagram showing the relationship between the size of the molten pool area and the target size.

[0043] Fig.13 The molten pool image showing the molten pool area and the non-molten pool area is shown.

[0044] Fig.14 Represents multiple melt pool images.

[0045] Fig.15 Indicates that by Fig.14 The multiple melt pool images shown are added (ie, synthesized) to generate an added image.

[0046] Fig.16 (a) is a timing diagram showing the shooting timing of the imaging unit, Fig.16 (b) is a timing diagram showing the exposure time of the imaging unit, Fig.16 (c) is a timing diagram showing the shooting cycle and shooting rate of the camera unit.

[0047] Fig.17 A histogram showing the brightness value of the melt pool image when the intensity of the processing light is the first intensity, and a histogram showing the brightness value of the melt pool image when the intensity of the processing light is the second intensity.

[0048] Fig.18 A histogram showing the brightness value of the melt pool image when the intensity of the processing light is the first intensity, and a histogram showing the brightness value of the melt pool image when the intensity of the processing light is the second intensity.

[0049] Fig.19A histogram showing the brightness value of the melt pool image when the target irradiation region moves at a first speed, and a histogram showing the brightness value of the melt pool image when the target irradiation region moves at a second speed.

[0050] Fig. 20 A histogram showing the brightness value of the melt pool image when the target irradiation region moves at a first speed, and a histogram showing the brightness value of the melt pool image when the target irradiation region moves at a second speed.

[0051] Fig.21 (a) shows a histogram of the brightness value of the molten pool image when the intensity of the processing light is the first intensity. Fig.21 (b) shows a histogram of the brightness value of the molten pool image when the intensity of the processing light is the second intensity and the number of added frames is not changed. Fig.21 (c) shows a histogram of the brightness values ​​of the melt pool image when the intensity of the processing light is the second intensity and the number of added frames is changed.

[0052] Fig. 22 (a) shows a histogram of the brightness value of the molten pool image when the intensity of the processing light is the first intensity. Fig. 22 (b) shows a histogram of the brightness value of the molten pool image when the intensity of the processing light is the second intensity and the number of added frames is not changed. Fig. 22 (c) shows a histogram of the brightness values ​​of the melt pool image when the intensity of the processing light is the second intensity and the number of added frames is changed.

[0053] Fig.23 (a) represents a histogram of the brightness value of the molten pool image when the target irradiation area moves at the first speed. Fig.23 (b) represents a histogram of the brightness value of the molten pool image when the speed of the target irradiation area moving is the second speed and the number of added frames is not changed. Fig.23 (c) shows a histogram of the brightness values ​​of the molten pool image when the speed of movement of the target irradiation area is the second speed and the number of added frames is changed.

[0054] Fig.24 (a) represents a histogram of the brightness value of the molten pool image when the target irradiation area moves at the first speed. Fig.24 (b) represents a histogram of the brightness value of the molten pool image when the speed of the target irradiation area moving is the second speed and the number of added frames is not changed. Fig.24 (c) shows a histogram of the brightness values ​​of the molten pool image when the speed of movement of the target irradiation area is the second speed and the number of added frames is changed.

[0055] Fig.25 It is a timing diagram showing the relationship between the size of the molten pool area and the target size.

[0056] Fig.26 (a) and Fig.26 (b) respectively represent the shapes of the molten pool areas.

[0057] Fig. 27 (a) to Fig. 27 (b) respectively represent the detected Fig.26 (a) is a cross-sectional view of a linear object formed when the molten pool region is formed. Fig. 27 (c) to Fig. 27 (d) respectively represent the detected Fig.26 (b) is a cross-sectional view of a linear object formed when the molten pool area is formed.

[0058] Fig.28 (a) shows the moving trajectory of the molten pool area. Fig.28 (b) indicates that Fig.28 (a) is a cross-sectional view of a linear object formed when the molten pool region is formed. Fig.28 (c) shows the moving trajectory of the molten pool area. Fig.28 (d) indicates the detection of Fig.28 (c) is a cross-sectional view of a linear object formed when the molten pool region is formed. Fig.28 (e) shows the moving trajectory of the molten pool area.

[0059] Fig.29 This is a cross-sectional view showing the center position of the molten pool region during the process of laminating a plurality of linear shaped objects. DETAILED DESCRIPTION

[0060] Hereinafter, embodiments of a processing system and a processing method will be described with reference to the accompanying drawings. Hereinafter, embodiments of a processing device and a processing method will be described using a processing system SYS that can process a workpiece W as an example of an object. In particular, embodiments of a processing device and a processing method will be described using a processing system SYS that performs additional processing based on a laser metal deposition method (LMD). Additional processing based on the laser metal deposition method is additional processing that forms a molded object that is integrated with the workpiece W or can be separated from the workpiece W by melting a molding material M supplied to the workpiece W with a processing light EL (i.e., an energy beam in the form of light).

[0061] In addition, in the following description, the positional relationship of various components constituting the processing system SYS is described using an XYZ orthogonal coordinate system defined by mutually orthogonal X-axis, Y-axis and Z-axis. In addition, in the following description, for the convenience of explanation, the X-axis direction and the Y-axis direction are both horizontal directions (i.e., predetermined directions in the horizontal plane), and the Z-axis direction is a vertical direction (i.e., a direction orthogonal to the horizontal plane, essentially an up-and-down direction). In addition, the rotation directions (in other words, tilting directions) around the X-axis, Y-axis and Z-axis are respectively referred to as the θX direction, the θY direction and the θZ direction. Here, the Z-axis direction may also be set as the gravity direction. In addition, the XY plane may also be set as the horizontal direction.

[0062] (1) Configuration of the machining system SYS

[0063] (1-1) Overall structure of the machining system SYS

[0064] First, refer to Figure 1 to Figure 2 The configuration of the machining system SYS according to the present embodiment will be described. Figure 1 It is a cross-sectional view schematically showing the structure of the processing system SYS according to the present embodiment. Figure 2 It is a block diagram showing the configuration of the machining system SYS according to the present embodiment.

[0065] The processing system SYS is capable of performing additional processing on the workpiece W. The processing system SYS can shape a shaped object that is integrated with the workpiece W (or can be separated from it) by performing additional processing on the workpiece W. In this case, the additional processing performed on the workpiece W is equivalent to the processing of adding the shaped object that is integrated with the workpiece W (or can be separated from it) to the workpiece W. In addition, the shaped object in the present embodiment can represent any object shaped by the processing system SYS. For example, as an example of a shaped object, the processing system SYS is capable of shaping a three-dimensional structure (that is, a three-dimensional structure having a size in any direction in the three-dimensional directions, a solid object, in other words, a structure having a size in the X-axis direction, the Y-axis direction, and the Z-axis direction) ST.

[0066] When the workpiece W is the platform 31 described below, the processing system SYS can perform additional processing on the platform 31. When the workpiece W is an object placed on the platform 31, that is, a carrier, the processing system SYS can perform additional processing on the carrier. The carrier placed on the platform 31 can be another three-dimensional structure ST (that is, an existing structure) that has been modeled by the processing system SYS. Figure 1 The example in which the workpiece W is an existing structure placed on the stage 31 is shown. In addition, the example in which the workpiece W is an existing structure placed on the stage 31 is also described below.

[0067] The workpiece W may be a repairable product with a defective portion. In this case, the processing system SYS may perform a repair process for repairing the repairable product by performing an additional process of molding a molded object for repairing the defective portion. That is, the additional process performed by the processing system SYS may include an additional process of attaching a molded object for repairing the defective portion to the workpiece W.

[0068] As described above, the processing system SYS is capable of performing additional processing based on the laser deposition welding method. That is, the processing system SYS can also be said to be a 3D printer that processes an object using the additive processing technology. In addition, the additive processing technology can also be called rapid prototyping, rapid manufacturing, or additive manufacturing. In addition, the laser deposition welding method (LMD) can also be called DED (Directed Energy Deposition).

[0069] The processing system SYS using the build-up processing technology sequentially forms a plurality of structure layers SL (see below) Figure 7 ), and a three-dimensional structure ST formed by stacking a plurality of structure layers SL is formed. In this case, the processing system SYS first sets the surface of the workpiece W as the modeling surface MS on which the object is actually to be shaped, and models the first structure layer SL on the modeling surface MS. Thereafter, the processing system SYS sets the surface of the first structure layer SL as a new modeling surface MS, and models the second structure layer SL on the modeling surface MS. Thereafter, the processing system SYS repeats the same action, thereby modeling a three-dimensional structure ST formed by stacking a plurality of structure layers SL.

[0070] The processing system SYS performs additional processing by processing the modeling material M using the processing light EL as an energy beam. The modeling material M is a material that can be melted by irradiating the processing light EL with a predetermined intensity or more. As such a modeling material M, for example, at least one of a metallic material and a resin material can be used. As an example of a metallic material, at least one of a copper-containing material, a tungsten-containing material, and a stainless steel-containing material can be cited. However, other materials different from the metallic material and the resin material can also be used as the modeling material M. The modeling material M is a powdery material. That is, the modeling material M is a powder. However, the modeling material M may not be a powder. For example, at least one of a wire-like modeling material and a gaseous modeling material can also be used as the modeling material M.

[0071] The workpiece W may also be an object containing a material that can be melted by irradiating the processing light EL with a predetermined intensity or more, similarly to the modeling material M. The material of the workpiece W may be the same as the modeling material M, or may be different therefrom. As the material of the workpiece W, for example, at least one of a metallic material and a resin material may be used. As an example of a metallic material, at least one of a copper-containing material, a tungsten-containing material, and a stainless steel-containing material may be cited. However, other materials different from metallic materials and resin materials may also be used as the material of the workpiece W.

[0072] In order to carry out additional processing, such as Figure 1 to Figure 2 As shown, the processing system SYS includes a material supply source 1, a processing unit 2, a stage unit 3, a light source 4, a gas supply source 5, a control unit 7, and a camera unit 8. The processing unit 2 and the stage unit 3 can be accommodated in the chamber space 63IN inside the housing 6. In this case, the processing system SYS can perform additional processing in the chamber space 63IN. In addition, at least one of the processing unit 2 and the stage unit 3 may not be accommodated in the chamber space 63IN inside the housing 6.

[0073] In addition, the processing unit 2 may also be referred to as a processing device. The device including at least one of the material supply source 1, the platform unit 3, the light source 4, and the gas supply source 5 and the processing unit 2 may also be referred to as a processing device. The control unit 7 may also be referred to as a control device. The imaging unit 8 may also be referred to as an imaging device.

[0074] The material supply source 1 supplies the modeling material M to the processing unit 2. The material supply source 1 supplies a desired amount of the modeling material M corresponding to the required amount so as to supply the modeling material M required per unit time for additional processing to the processing unit 2.

[0075] The processing unit 2 processes the molding material M supplied from the material supply source 1 to form a molding object. In order to form a molding object, the processing unit 2 includes a processing head 21 and a head driving system 22. Furthermore, the processing head 21 includes an irradiation optical system 211 and a plurality of material nozzles 212. The processing head 21 may also include a plurality of irradiation optical systems 211. The processing head 21 may also include a single material nozzle 212.

[0076] The irradiation optical system 211 is an optical system for emitting processing light EL. Specifically, the irradiation optical system 211 is optically connected to the light source 4 that emits (generates) processing light EL via the light transmission member 41. As an example of the light transmission member 41, at least one of an optical fiber and a light guide can be cited.

[0077] Figure 1 to Figure 2In the example shown, the processing system SYS includes two light sources 4 (specifically, light sources 4#1 and 4#2), and the irradiation optical system 211 is optically connected to the light sources 4#1 and 4#2 via light transmission components 41#1 and 41#2, respectively. The irradiation optical system 211 emits both the processing light EL transmitted from the light source 4#1 via the light transmission component 41#1 and the processing light EL transmitted from the light source 4#2 via the light transmission component 41#2. In the following description, if there is no need to distinguish between the two processing lights EL emitted by the irradiation optical system 211, the processing light EL generated by the light source 4#1 is referred to as "processing light EL#1", and the processing light EL generated by the light source 4#2 is referred to as "processing light EL#2", as needed.

[0078] However, the processing system SYS may include a single light source 4 instead of the plurality of light sources 4. The irradiation optical system 211 may emit a single processing light EL instead of the plurality of processing light EL.

[0079] The irradiation optical system 211 emits processing light EL downward (i.e., -Z side) from the irradiation optical system 211. A platform 31 is arranged below the irradiation optical system 211. When a workpiece W is placed on the platform 31, the irradiation optical system 211 irradiates the emitted processing light EL onto the modeling surface MS. Specifically, the irradiation optical system 211 can irradiate the processing light EL to a target irradiation area (target irradiation position) EA set on the modeling surface MS as an area to be irradiated (typically focused) with processing light EL. In addition, in the following description, if it is not necessary to distinguish between two target irradiation areas EA to be irradiated with two beams of processing light EL respectively by the irradiation optical system 211, the target irradiation area EA to be irradiated with processing light EL#1 by the irradiation optical system 211 is referred to as "target irradiation area EA#1", and the target irradiation area EA to be irradiated with processing light EL#2 by the irradiation optical system 211 is referred to as "target irradiation area EA#2", as needed. Furthermore, under the control of the control unit 7, the state of the irradiation optical system 211 can be switched between a state in which the processing light EL is irradiated to the target irradiation area EA and a state in which the processing light EL is not irradiated to the target irradiation area EA. In addition, the direction of the processing light EL emitted from the irradiation optical system 211 is not limited to being directly below (i.e., in line with the -Z axis direction), and may be, for example, a direction inclined at a predetermined angle relative to the Z axis. That is, the third optical system 216 described below (or the fθ lens 2162 described below) is not limited to being an object-side telecentric optical system, and may also be an object-side non-telecentric optical system.

[0080] The irradiation optical system 211 can form a molten pool MP on the modeling surface MS by irradiating the processing light EL onto the modeling surface MS. For example, the irradiation optical system 211 can form a molten pool MP#1 on the modeling surface MS by irradiating the processing light EL#1 onto the modeling surface MS. For example, the irradiation optical system 211 can also form a molten pool MP#2 on the modeling surface MS by irradiating the processing light EL#2 onto the modeling surface MS. The molten pool MP#1 and the molten pool MP#2 can be integrated. Alternatively, the molten pool MP#1 and the molten pool MP#2 can be separated from each other. However, the molten pool MP#1 can be formed on the modeling surface MS without the irradiation of the processing light EL#1. The molten pool MP#2 can also be formed on the modeling surface MS without the irradiation of the processing light EL#2.

[0081] The material nozzle 212 supplies (e.g., injects, sprays, ejects or blows) the modeling material M. The material nozzle 212 is physically connected to the material supply source 1, which is the supply source of the modeling material M, via the supply pipe 11 and the mixing device 12. The material nozzle 212 supplies the modeling material M supplied from the material supply source 1 via the supply pipe 11 and the mixing device 12. The material nozzle 212 can also pressure-feed the modeling material M supplied from the material supply source 1 via the supply pipe 11. That is, the modeling material M from the material supply source 1 and the gas for transportation (i.e., pressurized gas, such as an inert gas such as nitrogen or argon) can be mixed in the mixing device 12 and then pressure-fed to the material nozzle 212 via the supply pipe 11. As a result, the material nozzle 212 supplies the modeling material M and the gas for transportation at the same time. As the gas for transportation, for example, a flushing gas supplied from the gas supply source 5 can be used. However, a gas supplied from a gas supply source different from the gas supply source 5 can also be used as the gas for transportation. In addition, although Figure 1 The material nozzle 212 is drawn as a tube, but the shape of the material nozzle 212 is not limited to this shape. The material nozzle 212 supplies the modeling material M from the material nozzle 212 downward (i.e., -Z side). A platform 31 is arranged below the material nozzle 212. When a workpiece W is mounted on the platform 31, the material nozzle 212 supplies the modeling material M to the modeling surface MS. In addition, the traveling direction of the modeling material M supplied from the material nozzle 212 is a direction inclined at a predetermined angle (e.g., an acute angle) relative to the Z-axis direction, but it may also be the -Z side (i.e., directly below).

[0082] In this embodiment, the material nozzle 212 supplies the modeling material M to the position to be irradiated by at least one of the processing lights EL#1 and EL#2 (i.e., at least one of the target irradiation areas EA#1 and EA#2). Therefore, the material nozzle 212 is aligned with the irradiation optical systems 211#1 and 211#2 in such a manner that the target supply area MA set on the modeling surface MS as the area to be supplied with the modeling material M by the material nozzle 212 overlaps at least partially with at least one of the target irradiation areas EA#1 and EA#2. The size of the target supply area MA may be larger or smaller than the size of at least one of the target irradiation areas EA#1 and EA#2, or may be the same as it.

[0083] The material nozzle 212 may also supply the modeling material M to the molten pool MP. Specifically, the material nozzle 212 may also supply the modeling material M to at least one of the molten pool MP#1 and the molten pool MP#2. However, the material nozzle 212 may not supply the modeling material M to the molten pool MP. For example, the processing system SYS may also melt the modeling material M from the material nozzle 212 before the modeling material M reaches the workpiece W using the processing light EL emitted from the irradiation optical system 211, and cause the molten modeling material M to adhere to the workpiece W.

[0084] The irradiation optical system 211 and the material nozzle 212 can be accommodated in a head housing 213 provided in the processing head 21. The head housing 213 is a housing having a storage space formed therein for accommodating the irradiation optical system 211 and the material nozzle 212. In this case, the irradiation optical system 211 and the material nozzle 212 can be accommodated in the storage space inside the head housing 213.

[0085] The head driving system 22 moves the processing head 21 under the control of the control unit 7. That is, the head driving system 22 moves the irradiation optical system 211 and the material nozzle 212 under the control of the control unit 7. The head driving system 22 moves the processing head 21 along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction, for example. In addition, the action of moving the processing head 21 along at least one of the θX direction, the θY direction, and the θZ direction can be regarded as the action of rotating the processing head 21 around at least one of the rotation axis along the X-axis, the rotation axis along the Y-axis, and the rotation axis along the Z-axis.

[0086] If the head driving system 22 moves the processing head 21, the relative positional relationship between the processing head 21 and the platform 31 and the workpiece W placed on the platform 31 changes. As a result, the relative positional relationship between the platform 31 and the workpiece W and the irradiation optical system 211 provided by the processing head 21 changes. Therefore, the head driving system 22 can also be regarded as functioning as a position changing device capable of changing the relative positional relationship between the platform 31 and the workpiece W and the irradiation optical system 211. Furthermore, if the relative positional relationship between the platform 31 and the workpiece W and the processing head 21 changes, the relative positional relationship between the target irradiation areas EA#1 and EA#2 and the target supply area MA and the workpiece W also changes. That is, the target irradiation areas EA#1 and EA#2 and the target supply area MA move on the surface of the workpiece W (more specifically, the molding surface MS for additional processing) along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. In this case, it can also be considered that the head driving system 22 moves the machining head 21 so that the target irradiation areas EA#1 and EA#2 and the target supply area MA are moved on the molding surface MS.

[0087] The stage unit 3 includes a stage 31 and a stage driving system 32 .

[0088] The workpiece W is placed on the platform 31. Specifically, the workpiece W is placed on the platform mounting surface 311 which is one surface of the platform 31 (for example, the upper surface facing the +Z side). The platform 31 can support the workpiece W placed on the platform 31. The platform 31 can also be capable of holding the workpiece W placed on the platform 31. In this case, the platform 31 can have at least one of a mechanical chuck, an electrostatic chuck, and a vacuum adsorption chuck in order to hold the workpiece W. Alternatively, the platform 31 can also be unable to hold the workpiece W placed on the platform 31. In this case, the workpiece W can be placed on the platform 31 without a fixture. In addition, the workpiece W can also be mounted on a holding device, and the holding device on which the workpiece W is mounted can be placed on the platform 31. The irradiation optical system 211 emits processing light EL#1 and EL#2 respectively during at least a portion of the period when the workpiece W is placed on the platform 31. Furthermore, the material nozzle 212 supplies the molding material M during at least a portion of the period when the workpiece W is placed on the platform 31.

[0089] The platform driving system 32 moves the platform 31. For example, the platform driving system 32 moves the platform 31 along at least one of the X-axis, the Y-axis, the Z-axis, the θX direction, the θY direction, and the θZ direction. In addition, the action of moving the platform 31 along at least one of the θX direction, the θY direction, and the θZ direction can be regarded as the action of rotating the platform 31 around at least one of the rotation axis along the X-axis (i.e., the A-axis), the rotation axis along the Y-axis (i.e., the B-axis), and the rotation axis along the Z-axis (i.e., the C-axis).

[0090] If the platform driving system 32 moves the platform 31, the relative positional relationship between the processing head 21, the platform 31, and the workpiece W changes. As a result, the relative positional relationship between the platform 31, the workpiece W, and the irradiation optical system 211 of the processing head 21 changes. Therefore, similar to the head driving system 22, the platform driving system 32 can also be regarded as functioning as a position changing device capable of changing the relative positional relationship between the platform 31, the workpiece W, and the irradiation optical system 211. Furthermore, if the relative positional relationship between the platform 31, the workpiece W, and the processing head 21 changes, the relative positional relationship between the target irradiation areas EA#1 and EA#2 and the target supply area MA and the workpiece W also changes. That is, the target irradiation areas EA#1 and EA#2 and the target supply area MA move on the surface of the workpiece W (more specifically, the molding surface MS) along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. In this case, it can also be considered that the stage driving system 32 moves the stage 31 so that the target irradiation areas EA# 1 and EA# 2 and the target supply area MA are moved on the modeling surface MS.

[0091] The light source 4 emits, for example, at least one of infrared light, visible light, and ultraviolet light as the processing light EL. However, other types of light may also be used as the processing light EL. The processing light EL may include a plurality of pulsed lights (i.e., a plurality of pulsed beams). The processing light EL may be a laser. In this case, the light source 4 may include a laser light source (for example, a semiconductor laser such as a laser diode (LD: Laser Diode). As a laser light source, at least one of a fiber laser, a CO2 laser, a YAG laser, and an excimer laser may be used. However, the processing light EL may not be a laser. The light source 4 may include any light source (for example, at least one of an LED (Light Emitting Diode) and a discharge lamp).

[0092] As described above, the processing system SYS has a plurality of light sources 4 (specifically, light sources 4#1 and 4#2). In this case, the characteristics of the processing light EL#1 emitted by the light source 4#1 and the characteristics of the processing light EL#2 emitted by the light source 4#2 may be the same. For example, the wavelength of the processing light EL#1 (typically the wavelength with the highest intensity in the wavelength band of the processing light EL#1, i.e., the peak wavelength) and the wavelength of the processing light EL#2 (typically the peak wavelength) may be the same. For example, the wavelength band of the processing light EL#1 (typically the range of wavelengths with intensities above a certain value) and the wavelength band of the processing light EL#2 may also be the same. For example, the intensity of the processing light EL#1 and the intensity of the processing light EL#2 may also be the same. For example, the absorption rate of the workpiece W (or an object with the molding surface MS as the surface, the same applies hereinafter) to the processing light EL#1 and the absorption rate of the workpiece W to the processing light EL#2 may also be the same. In particular, the absorption rate of the workpiece W to the peak wavelength of the processing light EL#1 and the absorption rate of the workpiece W to the peak wavelength of the processing light EL#2 may also be the same. Alternatively, the characteristics of the processing light EL#1 emitted by the light source 4#1 may be different from the characteristics of the processing light EL#2 emitted by the light source 4#2. For example, the wavelength (typically the peak wavelength) of the processing light EL#1 may be different from the wavelength (typically the peak wavelength) of the processing light EL#2. For example, the wavelength band of the processing light EL#1 may be different from the wavelength band of the processing light EL#2. For example, the intensity of the processing light EL#1 may be different from the intensity of the processing light EL#2. For example, the absorption rate of the workpiece W to the processing light EL#1 may be different from the absorption rate of the workpiece W to the processing light EL#2. In particular, the absorption rate of the workpiece W to the peak wavelength of the processing light EL#1 may be different from the absorption rate of the workpiece W to the peak wavelength of the processing light EL#2.

[0093] In addition, the present embodiment describes an example in which the processing system SYS includes a plurality of light sources 4. However, the processing system SYS may not include a plurality of light sources 4. The processing system SYS may also include a single light source 4. As an example, the processing system may include a light source that emits (supplies) light of a wide wavelength band or multiple wavelengths as a single light source 4. In this case, the processing system SYS can generate processing light EL#1 and processing light EL#2 having different wavelengths by wavelength-splitting the light emitted from the light source.

[0094] The gas supply source 5 is a supply source of flushing gas for flushing the chamber space 63IN inside the shell 6. The flushing gas contains an inert gas. As an example of an inert gas, nitrogen or argon can be cited. The gas supply source 5 is connected to the chamber space 63IN via a supply port 62 formed on the partition wall component 61 of the shell 6, and a supply pipe 51 connecting the gas supply source 5 and the supply port 62. The gas supply source 5 supplies flushing gas to the chamber space 63IN via the supply pipe 51 and the supply port 62. As a result, the chamber space 63IN becomes a space flushed with the flushing gas. The flushing gas supplied to the chamber space 63IN can be discharged from an exhaust port (not shown) formed on the partition wall component 61. In addition, the gas supply source 5 can also be a gas tank storing an inert gas. When the inert gas is nitrogen, the gas supply source 5 can also be a nitrogen generating device that generates nitrogen using the atmosphere as a raw material.

[0095] As described above, when the material nozzle 212 supplies the molding material M and simultaneously supplies the flushing gas, the gas supply source 5 can supply the flushing gas to the mixing device 12 supplied with the molding material M from the material supply source 1. Specifically, the gas supply source 5 can be connected to the mixing device 12 via the supply pipe 52 that connects the gas supply source 5 to the mixing device 12. As a result, the gas supply source 5 supplies the flushing gas to the mixing device 12 via the supply pipe 52. In this case, the molding material M from the material supply source 1 can be supplied (specifically, pressure-fed) to the material nozzle 212 by the flushing gas supplied from the gas supply source 5 via the supply pipe 52 through the supply pipe 11. That is, the gas supply source 5 can be connected to the material nozzle 212 via the supply pipe 52, the mixing device 12, and the supply pipe 11. In this case, the material nozzle 212 supplies the molding material M and simultaneously supplies the flushing gas for pressure-fed molding material M.

[0096] The control unit 7 controls the operation of the processing system SYS. For example, the control unit 7 can control the processing unit 2 (for example, at least one of the processing head 21 and the head driving system 22) of the processing system SYS in a manner of performing additional processing on the workpiece W. For example, the control unit 7 can also control the platform unit 3 (for example, the platform driving system 32) of the processing system SYS in a manner of performing additional processing on the workpiece W. For example, the control unit 7 can also control the material supply source 1 of the processing system SYS in a manner of performing additional processing on the workpiece W. For example, the control unit 7 can also control the light source 4 of the processing system SYS in a manner of performing additional processing on the workpiece W. For example, the control unit 7 can also control the gas supply source 5 of the processing system SYS in a manner of performing additional processing on the workpiece W.

[0097] The control unit 7 may include, for example, a computing device 71 and a storage device 72. The computing device 71 may include, for example, at least one of a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The storage device 72 may include, for example, a memory. The control unit 7 functions as a device for controlling the actions of the machining system SYS by executing a computer program by the computing device 71. The computer program is a computer program for causing the computing device 71 to perform (i.e., execute) the following actions that the control unit 7 should perform. That is, the computer program is a computer program for causing the control unit 7 to function so that the machining system SYS performs the following actions. The computer program executed by the computing device 71 may be recorded in the storage device 72 (i.e., a recording medium) included in the control unit 7, or may be recorded in any storage medium (e.g., a hard disk or a semiconductor memory) that is built into the control unit 7 or can be externally provided to the control unit 7. Alternatively, the computing device 71 may also download the computer program to be executed from an external device of the control unit 7 via a network interface. In addition, the storage device 72 may also be referred to as a recording device.

[0098] The control unit 7 can control the emission pattern of the processing light EL emitted by the irradiation optical system 211. The emission pattern can include, for example, at least one of the intensity of the processing light EL and the emission timing of the processing light EL. In the case where the processing light EL includes multiple pulsed lights, the emission pattern can include, for example, at least one of the emission time of the pulsed light, the emission period of the pulsed light, and the ratio of the emission time of the pulsed light to the emission period of the pulsed light (the so-called working ratio). Furthermore, the control unit 7 can also control the movement pattern of the head driving system 22 to move the processing head 21. The control unit 7 can also control the movement pattern of the platform driving system 32 to move the platform 31. The movement pattern can include, for example, at least one of the movement amount, movement speed, movement direction and movement timing (movement period). Furthermore, the control unit 7 can also control the supply pattern of the material nozzle 212 to supply the modeling material M. The supply pattern can include, for example, at least one of the supply amount (especially the supply amount per unit time) and the supply timing (supply period).

[0099] The control unit 7 may not be arranged inside the processing system SYS. For example, the control unit 7 may be arranged outside the processing system SYS as a server or the like. In this case, the control unit 7 and the processing system SYS may be connected via a wired and / or wireless network (or a data bus and / or a communication line). As a wired network, for example, a network using a serial bus interface represented by at least one of IEEE1394, RS-232x, RS-422, RS-423, RS-485 and USB may be used. As a wired network, a network using a parallel bus interface may also be used. As a wired network, a network using an Ethernet (registered trademark) standard interface represented by at least one of 10BASE-T, 100BASE-TX and 1000BASE-T may also be used. As a wireless network, a network using radio waves may be used. As an example of a network using radio waves, a network using the IEEE802.1x standard (for example, at least one of a wireless LAN and Bluetooth (registered trademark)) may be cited. As a wireless network, a network using infrared rays may also be used. As a wireless network, a network using optical communication may also be used. In this case, the control unit 7 and the processing system SYS can be configured in a manner that various information can be sent and received via a network. In addition, the control unit 7 can also be capable of sending information such as instructions and control parameters to the processing system SYS via the network. The processing system SYS can have a receiving device that receives information such as instructions and control parameters from the control unit 7 via the network. The processing system SYS can also have a sending device that sends information such as instructions and control parameters to the control unit 7 via the network (i.e., an output device that outputs information to the control unit 7). Alternatively, a first control unit that executes a part of the processing performed by the control unit 7 may be arranged inside the processing system SYS, and a second control unit that executes another part of the processing performed by the control unit 7 may be arranged outside the processing system SYS.

[0100] The control unit 7 may be installed with a computing model that can be built by machine learning by executing a computer program through the computing device 71. As an example of a computing model that can be built by machine learning, for example, a computing model including a neural network (so-called artificial intelligence (AI)) can be cited. In this case, the learning of the computing model can include the learning of neural network parameters (for example, at least one of weights and biases). The control unit 7 can use the computing model to control the action of the processing system SYS. That is, the action of controlling the action of the processing system SYS can include the action of controlling the action of the processing system SYS using the computing model. In addition, the control unit 7 may also be installed with a computing model built by online machine learning using teaching data. In addition, the computing model installed in the control unit 7 can be updated on the control unit 7 by online machine learning. Alternatively, the control unit 7 may also use a computing model installed in a device outside the control unit 7 (that is, a device provided outside the processing system SYS) in addition to or instead of the computing model installed in the control unit 7 to control the action of the processing system SYS.

[0101] In addition, as a recording medium for recording the computer program executed by the control unit 7, at least one of CD-ROM, CD-R, CD-RW, floppy disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD+R, DVD-RW, DVD+RW and Blu-ray (registered trademark) and other optical disks, magnetic media such as magnetic tapes, magneto-optical disks, semiconductor memories such as USB memories, and other arbitrary media capable of storing programs can be used. The recording medium may also include a device capable of recording a computer program (for example, a general-purpose device or a dedicated device in which the computer program is installed so that it can be executed in the form of at least one of software and firmware). Furthermore, each process and function included in the computer program can be achieved by a logic processing block implemented in the control unit 7 by executing the computer program by the control unit 7 (i.e., the computer), or by hardware such as a predetermined gate array (FPGA (Field Programmable Gate Array), ASIC (Application Specific Integrated Circuit)) possessed by the control unit 7, or by a mixed existence of a logic processing block and a partial hardware module that implements a part of the elements of the hardware.

[0102] The imaging unit 8 is an imaging device that can photograph an object under the control of the control unit 7. Therefore, the imaging unit 8 may include a camera that can photograph an object. The camera may include an imaging element. The imaging element may include a CCD (Charged Coupled Device) sensor. The imaging element may also include a CMOS (Complementary Metal Oxide Semiconductor) sensor. In this case, the imaging unit 8 can use the imaging element to receive light from the object, thereby photographing the object. That is, the imaging unit 8 can expose the imaging element using the light from the object, thereby photographing the object. In addition, "exposing the imaging element using the light from the object" can be referred to as "exposing the imaging element (that is, the imaging unit 8) (exposure of the object)".

[0103] The photographed object may include at least a portion of the workpiece W. The photographed object may also include at least a portion of the object formed by the processing system SYS. In particular, the photographed object may include at least a portion of an object having a modeling surface MS. As described above, the modeling surface MS is set to the surface of the workpiece W or the structure layer SL. Therefore, the photographed object may include at least a portion of the workpiece W or at least a portion of the structure layer SL.

[0104] As described above, the molten pool MP is formed on the molding surface MS by the processing light EL. In this case, the imaging unit 8 may be able to photograph the molten pool MP. That is, the imaging unit 8 may be able to photograph the area including the molten pool MP (i.e., the area on the molding surface MS including the molten pool MP). In the following description, an example in which the imaging unit 8 photographs the molten pool MP is described. That is, in the following description, an example in which the imaging unit 8 photographs the area including the molten pool MP (i.e., the area on the molding surface MS including the molten pool MP) is described.

[0105] The camera unit 8 may be provided on the processing head 21. Figure 1 As shown, the camera unit 8 may be provided on the head housing 213 of the processing head 21. In this case, if the processing head 21 is moved by the head driving system 22, the camera unit 8 provided on the processing head 21 also moves together with the processing head 21. In this case, the relative positional relationship between the processing head 21 and the camera unit 8 is fixed. However, the camera unit 8 may not be provided on the processing head 21. The camera unit 8 may also be provided on an object different from the processing head 21.

[0106] The imaging unit 8 captures the object to be captured, thereby generating an image in which the object to be captured is captured. In the present embodiment, as described above, the imaging unit 8 captures the molten pool MP, and thus the imaging unit 8 generates an image in which the molten pool MP is captured. In the following description, the image generated by the imaging unit 8 (i.e., the image in which the molten pool MP is captured) is referred to as a "molten pool image IMG".

[0107] The camera unit 8 can output the generated molten pool image IMG to the control unit 7. The control unit 7 can control the processing system SYS based on the molten pool image IMG. For example, the control unit 7 can control the processing unit 2 (for example, at least one of the processing head 21 and the head driving system 22) in a manner of performing additional processing on the workpiece W based on the molten pool image IMG. For example, the control unit 7 can also control the platform unit 3 (for example, the platform driving system 32) in a manner of performing additional processing on the workpiece W based on the molten pool image IMG. For example, the control unit 7 can also control the material supply source 1 in a manner of performing additional processing on the workpiece W based on the molten pool image IMG. For example, the control unit 7 can also control the light source 4 in a manner of performing additional processing on the workpiece W based on the molten pool image IMG. For example, the control unit 7 can also control the gas supply source 5 in a manner of performing additional processing on the workpiece W based on the molten pool image IMG.

[0108] (1-2) Configuration of the Illumination Optical System 211

[0109] Next, refer to Figure 3 The structure of the irradiation optical system 211 will be described. Figure 3 It is a cross-sectional view showing the structure of the irradiation optical system 211 .

[0110] like Figure 3As shown, the irradiation optical system 211 includes a first optical system 214, a second optical system 215, and a third optical system 216. The first optical system 214 is an optical system for incident processing light EL#1 emitted from the light source 4#1. The first optical system 214 is an optical system for causing processing light EL#1 emitted from the light source 4#1 to be emitted toward the third optical system 216. The second optical system 215 is an optical system for incident processing light EL#2 emitted from the light source 4#2. The second optical system 215 is an optical system for causing processing light EL#2 emitted from the light source 4#2 to be emitted toward the third optical system 216. The third optical system 216 is an optical system for incident processing light EL#1 emitted from the first optical system 214 and processing light EL#2 emitted from the second optical system 215. The third optical system 216 is an optical system for causing processing light EL#1 emitted from the first optical system 214 and processing light EL#2 emitted from the second optical system 215 to be emitted toward the molding surface MS. Hereinafter, the first optical system 214, the second optical system 215, and the third optical system 216 will be described in sequence.

[0111] The first optical system 214 includes a collimating lens 2141, a parallel plate 2142, a power meter 2143, and a galvanometer scanner 2144. The galvanometer scanner 2144 includes a focus control optical system 2145 and a galvanometer mirror 2146. However, the first optical system 214 may not include at least one of the collimating lens 2141, the parallel plate 2142, the power meter 2143, and the galvanometer scanner 2144. The galvanometer scanner 2144 may not include at least one of the focus control optical system 2145 and the galvanometer mirror 2146.

[0112] The processing light EL#1 emitted from the light source 4#1 is incident on the collimating lens 2141. The collimating lens 2141 converts the processing light EL#1 incident on the collimating lens 2141 into parallel light. In addition, in the case where the processing light EL#1 emitted from the light source 4#1 is parallel light (that is, the processing light EL#1 as parallel light is incident on the first optical system 214), the first optical system 214 may not include the collimating lens 2141. The processing light EL#1 converted into parallel light by the collimating lens 2141 is incident on the parallel plate 2142. A part of the processing light EL#1 incident on the parallel plate 2142 passes through the parallel plate 2142. Another part of the processing light EL#1 incident on the parallel plate 2142 is reflected by the parallel plate 2142.

[0113] The processing light EL# 1 that has passed through the parallel plate 2142 enters the galvanometer scanner 2144 . Specifically, the processing light EL# 1 that has passed through the parallel plate 2142 enters the focus control optical system 2145 of the galvanometer scanner 2144 .

[0114] The focus control optical system 2145 is an optical component capable of changing the focusing position CP of the processing light EL#1 (hereinafter referred to as "focusing position CP#1"). Specifically, the focus control optical system 2145 can change the focusing position CP#1 of the processing light EL#1 along the irradiation direction of the processing light EL#1 irradiated to the modeling surface MS. Figure 3 In the example shown, the irradiation direction of the processing light EL#1 irradiated to the modeling surface MS is a direction with the Z-axis direction as the main component. In this case, the focus control optical system 2145 can change the focusing position CP#1 of the processing light EL#1 along the Z-axis direction. In addition, since the irradiation optical system 211 irradiates the processing light EL to the modeling surface MS from above the workpiece W, the irradiation direction of the processing light EL#1 is a direction that intersects with the modeling surface MS (for example, the surface of the workpiece W or the structural layer SL). Therefore, it can be regarded that the focus control optical system 2145 can change the focusing position CP#1 of the processing light EL#1 along the direction that intersects with the modeling surface MS (for example, the surface of the workpiece W or the structural layer SL). It can also be regarded that the focusing optical system 2145 can change the focusing position CP#1 of the processing light EL#1 along the direction of the optical axis AX of the irradiation optical system 211 (typically the third optical system 216).

[0115] In addition, the irradiation direction of the processing light EL#1 may represent the irradiation direction of the processing light EL#1 emitted from the third optical system 216. In this case, the irradiation direction of the processing light EL#1 may be the same as the direction along the optical axis of the third optical system 216. The irradiation direction of the processing light EL#1 may also be the same as the direction along the optical axis of the final optical component, which refers to the optical component that is arranged closest to the modeling surface MS among the optical components constituting the third optical system 216. The final optical component may be the fθ lens 2162 described below. In addition, in the case where the fθ lens 2162 described below is composed of a plurality of optical components, the final optical component may also be the optical component that is arranged closest to the modeling surface MS among the plurality of optical components constituting the fθ lens 2162.

[0116] The focus control optical system 2145 may include, for example, a plurality of lenses arranged along the irradiation direction of the processing light EL#1. In this case, the focus control optical system 2145 may change the focusing position CP#1 of the processing light EL#1 by moving at least one of the plurality of lenses along its optical axis.

[0117] If the focus control optical system 2145 changes the focusing position CP#1 of the processing light EL#1, the positional relationship between the focusing position CP#1 of the processing light EL#1 and the modeling surface MS changes. In particular, the positional relationship between the focusing position CP#1 of the processing light EL#1 and the modeling surface MS in the irradiation direction of the processing light EL#1 changes. Therefore, the focus control optical system 2145 can also be regarded as changing the positional relationship between the focusing position CP#1 of the processing light EL#1 and the modeling surface MS by changing the focusing position CP#1 of the processing light EL#1.

[0118] In addition, as described above, the galvanometer scanner 2144 may not include the focus control optical system 2145. In this case as well, if the positional relationship between the irradiation optical system 211 and the modeling surface MS in the irradiation direction of the processing light EL#1 changes, the positional relationship between the focusing position CP#1 of the processing light EL#1 in the irradiation direction of the processing light EL#1 and the modeling surface MS changes. Therefore, even if the galvanometer scanner 2144 does not include the focus control optical system 2145, the processing system SYS can change the positional relationship between the focusing position CP#1 of the processing light EL#1 in the irradiation direction of the processing light EL#1 and the modeling surface MS. For example, the processing system SYS can use the head drive system 22 to move the processing head 21 along the irradiation direction of the processing light EL#1, thereby changing the positional relationship between the focusing position CP#1 of the processing light EL#1 in the irradiation direction of the processing light EL#1 and the modeling surface MS. For example, the processing system SYS may utilize the platform driving system 32 to move the platform 31 along the irradiation direction of the processing light EL#1, thereby changing the positional relationship between the focusing position CP#1 of the processing light EL#1 in the irradiation direction of the processing light EL#1 and the modeling surface MS.

[0119] The processing light EL#1 emitted from the focus control optical system 2145 is incident on the galvanometer mirror 2146. The galvanometer mirror 2146 changes the emission direction of the processing light EL#1 emitted from the galvanometer mirror 2146 by deflecting the processing light EL#1. Therefore, the galvanometer mirror 2146 can also be called a deflection optical system. If the emission direction of the processing light EL#1 emitted from the galvanometer mirror 2146 is changed, the position of the processing light EL#1 emitted from the processing head 21 is changed. If the position of the processing light EL#1 emitted from the processing head 21 is changed, the target irradiation area EA#1 on the modeling surface MS irradiated by the processing light EL#1 moves. That is, the irradiation position on the modeling surface MS irradiated by the processing light EL#1 moves. Therefore, the galvanometer mirror 2146 can also be regarded as functioning as an irradiation position moving device capable of moving the irradiation position of the processing light EL#1 on the modeling surface MS on the modeling surface MS.

[0120] In particular, if the emission direction of the processing light EL#1 emitted from the galvanometer mirror 2146 is changed, the irradiation position of the processing light EL#1 relative to the processing head 21 having the galvanometer mirror 2146 is changed. Therefore, it can be considered that the galvanometer mirror 2146 functions as a position changing device capable of changing the irradiation position of the processing light EL#1 relative to the processing head 21.

[0121] The galvanometer mirror 2146 includes, for example, an X scanning mirror 2146MX, an X scanning motor 2146AX, a Y scanning mirror 2146MY, and a Y scanning motor 2146AY. The processing light EL#1 emitted from the focus control optical system 2145 is incident on the X scanning mirror 2146MX. The X scanning mirror 2146MX reflects the processing light EL#1 incident on the X scanning mirror 2146MX toward the Y scanning mirror 2146MY. The Y scanning mirror 2146MY reflects the processing light EL#1 incident on the Y scanning mirror 2146MY toward the third optical system 216. In addition, the X scanning mirror 2146MX and the Y scanning mirror 2146MY may also be referred to as galvanometer mirrors.

[0122] The X-scan motor 2146AX swings or rotates the X-scan mirror 2146MX around the rotation axis along the Y-axis. As a result, the angle of the X-scan mirror 2146MX relative to the optical path of the processing light EL#1 incident on the X-scan mirror 2146MX changes. In this case, the processing light EL#1 scans the modeling surface MS along the X-axis direction by the swing or rotation of the X-scan mirror 2146MX. That is, the target irradiation area EA#1 (i.e., the irradiation position of the processing light EL#1) moves along the X-axis direction on the modeling surface MS.

[0123] The Y scanning motor 2146AY causes the Y scanning mirror 2146MY to swing or rotate around the rotation axis along the X axis. As a result, the angle of the Y scanning mirror 2146MY relative to the optical path of the processing light EL#1 incident on the Y scanning mirror 2146MY changes. In this case, the processing light EL#1 scans the modeling surface MS along the Y axis direction by the swing or rotation of the Y scanning mirror 2146MY. That is, the target irradiation area EA#1 (i.e., the irradiation position of the processing light EL#1) moves along the Y axis direction on the modeling surface MS.

[0124] In the present embodiment, the imaginary area where the galvanometer mirror 2146 moves the target irradiation area EA#1 on the modeling surface MS is referred to as the processing unit area BSA (particularly the processing unit area BSA#1). In this case, the target irradiation area EA#1 can also be regarded as moving on the surface of the modeling surface MS that overlaps with the processing unit area BSA#1. Specifically, the imaginary area where the galvanometer mirror 2146 moves the target irradiation area EA#1 on the modeling surface MS when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed (i.e., does not change) is referred to as the processing unit area BSA (particularly the processing unit area BSA#1). The processing unit area BSA#1 represents the imaginary area (in other words, the range) where the processing head 21 actually performs additional processing using the processing light EL#1 when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed. The processing unit area BSA#1 represents the imaginary area (in other words, the range) where the processing head 21 actually scans using the processing light EL#1 when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed. The processing unit area BSA#1 represents the area (in other words, the range) to which the target irradiation area EA#1 actually moves when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed. Therefore, the processing unit area BSA#1 can also be regarded as a hypothetical area determined with the processing head 21 (especially the irradiation optical system 211) as a reference. That is, the processing unit area BSA#1 can also be regarded as a hypothetical area on the modeling surface MS located at a position determined with the processing head 21 (especially the irradiation optical system 211) as a reference. In addition, the maximum area on the modeling surface MS to which the galvanometer mirror 2146 can move the target irradiation area EA#1 when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed can also be referred to as the processing unit area BSA#1.

[0125] In this case, the processing system SYS can use the galvanometer mirror 2146 to move the target irradiation area EA#1 within the processing unit area BSA#1. Therefore, the action of deflecting the processing light EL#1 using the galvanometer mirror 2146 can be regarded as the action of moving the target irradiation area EA#1 within the processing unit area BSA#1. Furthermore, as described above, the molten pool MP#1 is formed by irradiating the target irradiation area EA#1 with the processing light EL#1. In this case, it can also be regarded as the processing system SYS using the galvanometer mirror 2146 to move the molten pool MP#1 within the processing unit area BSA#1. Therefore, the action of deflecting the processing light EL#1 using the galvanometer mirror 2146 can also be regarded as the action of moving the molten pool MP#1 within the processing unit area BSA#1. That is, the action of moving the target irradiation area EA#1 within the processing unit area BSA#1 can be regarded as the action of moving the molten pool MP#1 within the processing unit area BSA#1.

[0126] In addition, as described above, if at least one of the processing head 21 and the platform 31 moves, the target irradiation area EA#1 will move on the modeling surface MS. However, when at least one of the processing head 21 and the platform 31 moves, the relative position relationship between the galvanometer mirror 2146 and the modeling surface MS will change. As a result, the processing unit area BSA#1 determined based on the processing head 21 (i.e., the processing unit area BSA#1 on the modeling surface MS where the galvanometer mirror 2146 moves the target irradiation area EA#1) moves on the modeling surface MS. Therefore, in this embodiment, the action of moving at least one of the processing head 21 and the platform 31 can be regarded as the action of moving the processing unit area BSA#1 relative to the modeling surface MS.

[0127] As an example of an operation to move the target irradiation area EA#1 within the processing unit area BSA#1, Figure 4 As shown in (a), the galvanometer mirror 2146 can deflect the processing light EL#1 in such a way that the target irradiation area EA#1 moves along a single scanning direction in the processing unit area BSA#1, assuming that the processing unit area BSA#1 is stationary on the modeling surface MS (i.e., does not move). That is, the galvanometer mirror 2146 can deflect the processing light EL#1 in such a way that the target irradiation area EA#1 moves along a single scanning direction in a coordinate system determined based on the processing unit area BSA#1. In particular, the galvanometer mirror 2146 can deflect the processing light EL#1 in such a way that the target irradiation area EA#1 moves back and forth periodically along the single scanning direction in the processing unit area BSA#1. That is, the galvanometer mirror 2146 can deflect the processing light EL#1 in such a way that the target irradiation area EA#1 moves back and forth periodically on an axis along the single scanning direction in the processing unit area BSA#1. In this case, the shape of the processing unit area BSA#1 to which the target irradiation area EA#1 moves may be a rectangular shape in which the moving direction of the target irradiation area EA#1 is the long side direction.

[0128] As another example of the operation of moving the molten pool MP#1 within the processing unit area BSA#1, Figure 5 (a) and Figure 5As shown in (b), the galvanometer mirror 2146 may deflect the processing light EL#1 in such a manner that the target irradiation area EA#1 moves along a plurality of scanning directions within the processing unit area BSA#1, assuming that the processing unit area BSA#1 is stationary on the molding surface MS (i.e., does not move), and these scanning directions are along the molding surface MS. That is, the galvanometer mirror 2146 may deflect the processing light EL#1 in such a manner that the target irradiation area EA#1 moves along a plurality of scanning directions within a coordinate system determined based on the processing unit area BSA#1. In particular, the galvanometer mirror 2146 may deflect the processing light EL#1 in such a manner that the target irradiation area EA#1 moves back and forth periodically along a plurality of scanning directions within the processing unit area BSA#1. That is, the galvanometer mirror 2146 may deflect the processing light EL#1 in such a manner that the target irradiation area EA#1 moves back and forth periodically along an axis along each of the plurality of scanning directions within the processing unit area BSA#1. Figure 5 (a) shows an example in which the target irradiation area EA#1 moves back and forth along the X-axis direction and the Y-axis direction in the processing unit area BSA#1 so that the moving trajectory of the target irradiation area EA#1 in the processing unit area BSA#1 becomes circular. In this case, the shape of the processing unit area BSA#1 where the target irradiation area EA#1 moves can be circular. Figure 5 (b) shows an example in which the target irradiation area EA#1 moves back and forth along the X-axis direction and the Y-axis direction in the processing unit area BSA#1 so that the moving trajectory of the target irradiation area EA#1 in the processing unit area BSA#1 becomes a mesh shape. In this case, the shape of the processing unit area BSA#1 where the target irradiation area EA#1 moves can also be a rectangle.

[0129] In addition, if Figure 4 (a) Figure 5 (a) and Figure 5 As shown in (b), the action of periodically moving the target irradiation area EA#1 on the modeling surface MS can also be called a shaking action. In other words, the action of periodically moving (in other words, deflecting) the processing light EL#1 in a manner that periodically moves the target irradiation area EA#1 on the modeling surface MS can also be called a shaking action.

[0130] The control unit 7 may move at least one of the processing head 21 and the stage 31 while the target irradiation area EA#1 is moved within the processing unit area BSA#1 by using the galvanometer mirror 2146, thereby moving the processing unit area BSA#1 on the modeling surface MS. That is, the control unit 7 may control at least one of the head drive system 22 and the stage drive system 32 while the target irradiation area EA#1 is moved within the processing unit area BSA#1 by using the galvanometer mirror 2146, thereby moving the processing unit area BSA#1 on the modeling surface MS.

[0131] For example, Figure 4 In the example shown in (a), the control unit 7 can control at least one of the head driving system 22 and the platform driving system 32 in such a manner that the processing unit area BSA#1 moves along the target moving trajectory MT0, and the target moving trajectory MT0 intersects (or is orthogonal to, depending on different circumstances) with the moving direction (i.e., scanning direction) of the target irradiation area EA#1 in the processing unit area BSA#1. In other words, the control unit 7 can control the galvanometer mirror 2146 in such a manner that the target irradiation area EA#1 moves periodically along the scanning direction, and the scanning direction intersects (or is orthogonal to, depending on different circumstances) with the target moving trajectory MT0 of the processing unit area BSA#1 on the modeling surface MS. As a result, the target irradiation area EA#1 can be moved along the modeling surface MS along the target moving trajectory MT0. Figure 4 Specifically, the target irradiation area EA#1 can move along the target movement trajectory MT0 of the processing unit area BSA#1 while moving along the scanning direction intersecting the target movement trajectory MT0. That is, the target irradiation area EA#1 can move along the wave-shaped (e.g., sinusoidal wave-shaped) movement trajectory MT#1 that vibrates around the target movement trajectory MT0.

[0132] For example, Figure 5 (a) or Figure 5In the example shown in (b), the control unit 7 may also control at least one of the head drive system 22 and the platform drive system 32 in such a manner that the processing unit area BSA#1 moves along the target moving trajectory MT0, wherein the target moving trajectory MT0 extends in at least one of a direction along the moving direction (i.e., scanning direction) of the target irradiation area EA#1 in the processing unit area BSA#1, and a direction intersecting (or sometimes orthogonal to) the moving direction of the target irradiation area EA#1 in the processing unit area BSA#1. Conversely, the control unit 7 may also control the galvanometer mirror 2146 in such a manner that the target irradiation area EA#1 moves periodically in a scanning direction of the target moving trajectory MT0 along the processing unit area BSA#1 on the molding surface MS, and a scanning direction intersecting (or sometimes orthogonal to) the target moving trajectory MT0. In addition, Figure 5 (c) indicates Figure 5 The moving trajectory MT#1 of the target irradiation area EA#1 on the modeling surface MS when the processing unit area BSA#1 shown in (a) moves along the target moving trajectory MT0 on the modeling surface MS.

[0133] When the molding surface MS is irradiated with processing light EL#1 in units of processing unit area BSA#1, a molten pool MP#1 is formed in at least a portion of the processing unit area BSA#1. As a result, a molding is formed in the processing unit area BSA#1. Here, as described above, the processing unit area BSA#1 is an area having a width in a direction intersecting with the moving direction of the processing unit area BSA#1 on the molding surface MS (specifically, the extension direction of the target moving trajectory MT0). In this case, a molding having a width along a direction intersecting with the target moving trajectory MT0 of the processing unit area BSA#1 is formed on the molding surface MS. For example, Figure 4 (a) and Figure 4 In the example shown in (b), a model is formed that has a width along the X-axis direction and extends along the Y-axis direction. Figure 5 (a) and Figure 5 In the example shown in (c), a shaped object having a width along the X-axis direction and extending along the Y-axis direction is shaped.

[0134] When the modeling surface MS is irradiated with processing light EL#1 in units of processing unit area BSA#1, the processing unit area BSA#1 is scanned with processing light EL#1 through the galvanometer mirror 2146. Therefore, compared with the case where the modeling surface MS is irradiated with processing light EL#1 without using the galvanometer mirror 2146, the possibility that the magnitude of the energy transferred from processing light EL#1 to processing unit area BSA#1 is uneven within the processing unit area BSA#1 is reduced. That is, the distribution of energy transferred from processing light EL#1 to processing unit area BSA#1 can be made uniform. As a result, the processing system SYS can shape a modeling object on the modeling surface MS with relatively high modeling accuracy.

[0135] However, the processing system SYS may not irradiate the modeling surface MS with the processing light EL#1 in units of the processing unit area BSA#1. The processing system SYS may irradiate the modeling surface MS with the processing light EL#1 without using the galvanometer mirror 2146. In this case, the target irradiation area EA#1 may move on the modeling surface MS as at least one of the processing head 21 and the stage 31 moves.

[0136] Refer again Figure 3 , the processing light EL#1 reflected by the parallel plate 2142 is incident on the power meter 2143. The power meter 2143 can detect the intensity of the processing light EL#1 incident on the power meter 2143. For example, the power meter 2143 may include a light receiving element that detects the processing light EL#1 as light. Alternatively, the higher the intensity of the processing light EL#1, the more energy the processing light EL#1 generates. As a result, the heat generated by the processing light EL#1 increases. Therefore, the power meter 2143 may also detect the intensity of the processing light EL#1 by detecting the processing light EL#1 as heat. In this case, the power meter 2143 may also include a heat detection element that detects the heat of the processing light EL#1.

[0137] As described above, the processing light EL#1 reflected by the parallel plate 2142 is incident on the power meter 2143. Therefore, the power meter 2143 detects the intensity of the processing light EL#1 reflected by the parallel plate 2142. Since the parallel plate 2142 is arranged on the optical path of the processing light EL#1 between the light source 4#1 and the galvanometer mirror 2146, the power meter 2143 can also be regarded as detecting the intensity of the processing light EL#1 traveling on the optical path between the light source 4#1 and the galvanometer mirror 2146. In this case, the power meter 2143 can stably detect the intensity of the processing light EL#1 without being affected by the deflection of the processing light EL#1 caused by the galvanometer mirror 2146. However, the configuration position of the power meter 2143 is not limited to Figure 3For example, the power meter 2143 may detect the intensity of the processing light EL#1 traveling on the optical path between the galvanometer mirror 2146 and the modeling surface MS. The power meter 2143 may detect the intensity of the processing light EL#1 traveling on the optical path within the galvanometer mirror 2146.

[0138] The detection result of the power meter 2143 is output to the control unit 7. The control unit 7 can control (in other words, change) the intensity of the processing light EL#1 based on the detection result of the power meter 2143 (i.e., the detection result of the intensity of the processing light EL#1). For example, the control unit 7 can control the intensity of the processing light EL#1 in such a way that the intensity of the processing light EL#1 on the modeling surface MS becomes the desired intensity. In order to control the intensity of the processing light EL#1, for example, the control unit 7 can control the light source 4#1 based on the detection result of the power meter 2143 to change the intensity of the processing light EL#1 emitted from the light source 4#1. As a result, the processing system SYS can irradiate the modeling surface MS with the processing light EL#1 having a suitable intensity, thereby appropriately modeling the modeling object on the modeling surface MS.

[0139] As described above, the processing light EL#1 has an intensity capable of melting the modeling material M. Therefore, the processing light EL#1 incident on the power meter 2143 may have an intensity capable of melting the modeling material M. However, if the processing light EL#1 having an intensity capable of melting the modeling material M is incident on the power meter 2143, the power meter 2143 may be damaged by the processing light EL#1. Therefore, the processing light EL#1 having an intensity that is not high enough to damage the power meter 2143 may be incident on the power meter 2143. In other words, the first optical system 214 may weaken the intensity of the processing light EL#1 incident on the power meter 2143 so that the processing light EL#1 having an intensity that is not high enough to damage the power meter 2143 is incident on the power meter 2143.

[0140] For example, in order to reduce the intensity of the processing light EL#1 incident on the power meter 2143, the reflectivity of the parallel plate 2142 to the processing light EL#1 can be set to an appropriate value. Specifically, the lower the reflectivity of the parallel plate 2142 to the processing light EL#1, the lower the intensity of the processing light EL#1 incident on the power meter 2143. Therefore, the reflectivity of the parallel plate 2142 can be set to a value low enough to achieve the following state, that is, the processing light EL#1 with an intensity not high enough to damage the power meter 2143 is incident on the power meter 2143. For example, the reflectivity of the parallel plate 2142 can be less than 10%. For example, the reflectivity of the parallel plate 2142 can also be less than several%. As such a parallel plate 2142 with a low reflectivity, pure glass can be used.

[0141] For example, in order to weaken the intensity of the processing light EL#1 incident on the power meter 2143, the first optical system 214 may also allow the processing light EL#1 to be incident on the power meter 2143 via the plurality of parallel plates 2142. Specifically, the processing light EL#1 reflected multiple times by the plurality of parallel plates 2142 may be allowed to be incident on the power meter 2143. In this case, the intensity of the processing light EL#1 reflected multiple times by the plurality of parallel plates 2142 is weaker than the intensity of the processing light EL#1 reflected once by one parallel plate 2142. Therefore, the possibility that the processing light EL#1 having an intensity not high enough to damage the power meter 2143 is incident on the power meter 2143 increases.

[0142] The surface of the parallel plate 2142 (particularly at least one of the incident surface for the processing light EL#1 to be incident and the reflection surface for reflecting the processing light EL#1) may be subjected to a desired coating treatment. For example, the surface of the parallel plate 2142 may be subjected to an anti-reflection coating treatment (AR).

[0143] The second optical system 215 includes a collimating lens 2151, a parallel plate 2152, a power meter 2153, and a galvanometer scanner 2154. The galvanometer scanner 2154 includes a focus control optical system 2155 and a galvanometer mirror 2156. However, the second optical system 215 may not include at least one of the collimating lens 2151, the parallel plate 2152, the power meter 2153, and the galvanometer scanner 2154. The galvanometer scanner 2154 may not include at least one of the focus control optical system 2155 and the galvanometer mirror 2156.

[0144] The processing light EL#2 emitted from the light source 4#2 is incident on the collimating lens 2151. The collimating lens 2151 converts the processing light EL#2 incident on the collimating lens 2151 into parallel light. In addition, in the case where the processing light EL#2 emitted from the light source 4#2 is parallel light (that is, the processing light EL#2 as parallel light is incident on the second optical system 215), the second optical system 215 may not include the collimating lens 2151. The processing light EL#2 converted into parallel light by the collimating lens 2151 is incident on the parallel plate 2152. A part of the processing light EL#2 incident on the parallel plate 2152 passes through the parallel plate 2152. Another part of the processing light EL#2 incident on the parallel plate 2152 is reflected by the parallel plate 2152.

[0145] The processing light EL# 2 that has passed through the parallel plate 2152 enters the galvanometer scanner 2154 . Specifically, the processing light EL# 2 that has passed through the parallel plate 2152 enters the focus control optical system 2155 of the galvanometer scanner 2154 .

[0146] The focus control optical system 2155 is an optical component capable of changing the focusing position CP of the processing light EL#2 (hereinafter referred to as "focusing position CP#2"). Specifically, the focus control optical system 2155 can change the focusing position CP#2 of the processing light EL#2 along the irradiation direction of the processing light EL#2 irradiated to the modeling surface MS. Figure 3 In the example shown, the irradiation direction of the processing light EL#2 irradiated to the modeling surface MS is a direction with the Z-axis direction as the main component. In this case, the focus control optical system 2155 can change the focusing position CP#2 of the processing light EL#2 along the Z-axis direction. In addition, since the irradiation optical system 211 irradiates the processing light EL to the modeling surface MS from above the workpiece W, the irradiation direction of the processing light EL#2 is a direction that intersects with the modeling surface MS (for example, the surface of the workpiece W or the structural layer SL). Therefore, it can be regarded that the focus control optical system 2155 can change the focusing position CP#2 of the processing light EL#2 along the direction that intersects with the modeling surface MS (for example, the surface of the workpiece W or the structural layer SL). It can also be regarded that the focusing optical system 2155 can change the focusing position CP#2 of the processing light EL#2 along the direction of the optical axis AX of the irradiation optical system 211 (typically the third optical system 216).

[0147] In addition, the irradiation direction of the processing light EL#2 may represent the irradiation direction of the processing light EL#2 emitted from the third optical system 216. In this case, the irradiation direction of the processing light EL#2 may be the same as the direction along the optical axis of the third optical system 216. The irradiation direction of the processing light EL#2 may also be the same as the direction along the optical axis of the final optical component, which refers to the optical component that is arranged closest to the modeling surface MS among the optical components constituting the third optical system 216. The final optical component may be the fθ lens 2162 described below. In addition, in the case where the fθ lens 2162 described below is composed of a plurality of optical components, the final optical component may also be the optical component that is arranged closest to the modeling surface MS among the plurality of optical components constituting the fθ lens 2162.

[0148] The focus control optical system 2155 may include, for example, a plurality of lenses arranged along the irradiation direction of the processing light EL# 2. In this case, the focus control optical system 2155 may change the focusing position CP of the processing light EL# 2 by moving at least one of the plurality of lenses along its optical axis.

[0149] If the focus control optical system 2155 changes the focusing position CP#2 of the processing light EL#2, the positional relationship between the focusing position CP#2 of the processing light EL#2 and the modeling surface MS changes. In particular, the positional relationship between the focusing position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 and the modeling surface MS changes. Therefore, the focus control optical system 2155 can also be regarded as changing the positional relationship between the focusing position CP#2 of the processing light EL#2 and the modeling surface MS by changing the focusing position CP#2 of the processing light EL#2.

[0150] Furthermore, as described above, the galvanometer scanner 2154 may not include the focus control optical system 2155. In this case as well, if the positional relationship between the irradiation optical system 211 and the molding surface MS in the irradiation direction of the processing light EL#2 changes, the positional relationship between the focusing position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 and the molding surface MS changes. Therefore, even if the galvanometer scanner 2154 does not include the focus control optical system 2155, the processing system SYS can change the positional relationship between the focusing position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 and the molding surface MS. For example, the processing system SYS can use the head drive system 22 to move the processing head 21 along the irradiation direction of the processing light EL#2, thereby changing the positional relationship between the focusing position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 and the molding surface MS. For example, the processing system SYS may utilize the platform driving system 32 to move the platform 31 along the irradiation direction of the processing light EL#2, thereby changing the positional relationship between the focusing position CP#2 of the processing light EL#2 in the irradiation direction of the processing light EL#2 and the molding surface MS.

[0151] The processing light EL#2 emitted from the focus control optical system 2155 is incident on the galvanometer mirror 2156. The galvanometer mirror 2156 changes the emission direction of the processing light EL#2 emitted from the galvanometer mirror 2156 by deflecting the processing light EL#2. Therefore, the galvanometer mirror 2156 can also be called a deflection optical system. If the emission direction of the processing light EL#2 emitted from the galvanometer mirror 2156 is changed, the position of the processing light EL#2 emitted from the processing head 21 is changed. If the position of the processing light EL#2 emitted from the processing head 21 is changed, the target irradiation area EA#2 on the modeling surface MS irradiated by the processing light EL#2 moves. That is, the irradiation position on the modeling surface MS irradiated by the processing light EL#2 moves. Therefore, the galvanometer mirror 2156 can also be regarded as functioning as an irradiation position moving device capable of moving the irradiation position of the processing light EL#2 on the modeling surface MS on the modeling surface MS.

[0152] In particular, if the emission direction of the processing light EL#2 emitted from the galvanometer mirror 2156 is changed, the irradiation position of the processing light EL#2 relative to the processing head 21 having the galvanometer mirror 2156 is changed. Therefore, it can be considered that the galvanometer mirror 2156 functions as a position changing device capable of changing the irradiation position of the processing light EL#2 relative to the processing head 21.

[0153] The galvanometer mirror 2156 includes, for example, an X scanning mirror 2156MX, an X scanning motor 2156AX, a Y scanning mirror 2156MY, and a Y scanning motor 2156AY. The processing light EL#2 emitted from the focus control optical system 2155 is incident on the X scanning mirror 2156MX. The X scanning mirror 2156MX reflects the processing light EL#2 incident on the X scanning mirror 2156MX toward the Y scanning mirror 2156MY. The Y scanning mirror 2156MY reflects the processing light EL#2 incident on the Y scanning mirror 2156MY toward the third optical system 216. In addition, the X scanning mirror 2156MX and the Y scanning mirror 2156MY may also be referred to as galvanometer mirrors.

[0154] The X-scan motor 2156AX swings or rotates the X-scan mirror 2156MX around the rotation axis along the Y-axis. As a result, the angle of the X-scan mirror 2156MX relative to the optical path of the processing light EL#2 incident on the X-scan mirror 2156MX changes. In this case, the processing light EL#2 scans the modeling surface MS along the X-axis direction by the swing or rotation of the X-scan mirror 2156MX. That is, the target irradiation area EA#2 (i.e., the irradiation position of the processing light EL#2) moves along the X-axis direction on the modeling surface MS.

[0155] The Y scanning motor 2156AY causes the Y scanning mirror 2156MY to swing or rotate around the rotation axis along the X axis. As a result, the angle of the Y scanning mirror 2156MY relative to the optical path of the processing light EL#2 incident on the Y scanning mirror 2156MY changes. In this case, the processing light EL#2 scans the modeling surface MS along the Y axis direction by the swing or rotation of the Y scanning mirror 2156MY. That is, the target irradiation area EA#2 (i.e., the irradiation position of the processing light EL#2) moves along the Y axis direction on the modeling surface MS.

[0156] In the present embodiment, the imaginary area where the galvanometer mirror 2156 moves the target irradiation area EA#2 on the modeling surface MS is referred to as the processing unit area BSA (particularly the processing unit area BSA#2). In this case, the target irradiation area EA#2 can also be regarded as moving on the surface (first surface) overlapping with the processing unit area BSA#2 in the modeling surface MS. Specifically, the imaginary area where the galvanometer mirror 2156 moves the target irradiation area EA#2 on the modeling surface MS when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed (i.e., does not change) is referred to as the processing unit area BSA (particularly the processing unit area BSA#2). The processing unit area BSA#2 represents the imaginary area (in other words, the range) where the processing head 21 actually performs additional processing using the processing light EL#2 when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed. The processing unit area BSA#2 represents the imaginary area (in other words, the range) where the processing head 21 actually scans using the processing light EL#2 when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed. The processing unit area BSA#2 represents the area (in other words, the range) to which the target irradiation area EA#2 actually moves when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed. Therefore, the processing unit area BSA#2 can also be regarded as a hypothetical area determined with the processing head 21 (especially the irradiation optical system 211) as a reference. That is, the processing unit area BSA#2 can also be regarded as a hypothetical area on the modeling surface MS located at a position determined with the processing head 21 (especially the irradiation optical system 211) as a reference. In addition, the maximum area on the modeling surface MS to which the galvanometer mirror 2156 can move the target irradiation area EA#2 when the positional relationship between the irradiation optical system 211 and the modeling surface MS is fixed can also be referred to as the processing unit area BSA#2.

[0157] In this case, the processing system SYS can use the galvanometer mirror 2156 to move the target irradiation area EA#2 within the processing unit area BSA#2. Therefore, the action of deflecting the processing light EL#2 using the galvanometer mirror 2156 can be regarded as the action of moving the target irradiation area EA#2 within the processing unit area BSA#2. Furthermore, as described above, the molten pool MP#2 is formed by irradiating the target irradiation area EA#2 with the processing light EL#2. In this case, it can also be regarded as the processing system SYS using the galvanometer mirror 2156 to move the molten pool MP#2 within the processing unit area BSA#2. Therefore, the action of deflecting the processing light EL#2 using the galvanometer mirror 2156 can also be regarded as the action of moving the molten pool MP#2 within the processing unit area BSA#2. That is, the action of moving the target irradiation area EA#2 within the processing unit area BSA#2 can be regarded as the action of moving the molten pool MP#2 within the processing unit area BSA#2.

[0158] In addition, as described above, if at least one of the processing head 21 and the platform 31 moves, the target irradiation area EA#2 will move on the modeling surface MS. However, when at least one of the processing head 21 and the platform 31 moves, the relative positional relationship between the galvanometer mirror 2156 and the modeling surface MS will change. As a result, the processing unit area BSA#2 determined based on the processing head 21 (i.e., the processing unit area BSA#2 where the galvanometer mirror 2156 moves the target irradiation area EA#2 on the modeling surface MS) moves on the modeling surface MS. Therefore, in this embodiment, the action of moving at least one of the processing head 21 and the platform 31 can be regarded as the action of moving the processing unit area BSA#2 relative to the modeling surface MS.

[0159] The features of processing unit area BSA#2 (e.g., shape and movement pattern, etc.) may be the same as the features of processing unit area BSA#1. The movement pattern of target irradiation area EA#2 in processing unit area BSA#2 (e.g., movement trajectory, etc.) may be the same as the movement pattern of target irradiation area EA#1 in processing unit area BSA#1. Therefore, the detailed description of the features of processing unit area BSA#2 and the movement pattern of target irradiation area EA#2 in processing unit area BSA#2 (e.g., movement trajectory, etc.) is omitted, and only one example of them is briefly described below. Figure 4 As shown in (a), the galvanometer mirror 2156 can deflect the processing light EL#2 in such a way that the target irradiation area EA#2 moves along a single scanning direction within the processing unit area BSA#2, assuming that the processing unit area BSA#2 is stationary on the modeling surface MS (i.e., does not move), and the scanning direction is along the modeling surface MS. Figure 4 The processing unit area BSA#2 shown in (a) moves along the target movement trajectory MT0 on the modeling surface MS, thereby making the target irradiation area EA#2 move along the modeling surface MS. Figure 4 The moving track MT#2 shown in (b) (for example, the wave-like moving track MT#2 vibrating around the target moving track MT0) moves. Figure 5 (a) and Figure 5 As shown in (b), the galvanometer mirror 2156 can also deflect the processing light EL#2 in such a manner that the target irradiation area EA#2 moves along multiple scanning directions within the processing unit area BSA#2 under the assumption that the processing unit area BSA#2 is stationary on the molding surface MS (i.e., does not move).

[0160] In addition, if Figure 4 (a) Figure 5 (a) and Figure 5As shown in (b), the action of periodically moving the target irradiation area EA#2 on the modeling surface MS can also be called a shaking action. In other words, the action of periodically moving (in other words, deflecting) the processing light EL#2 in a manner that periodically moves the target irradiation area EA#2 on the modeling surface MS can also be called a shaking action.

[0161] Typically, processing unit area BSA#1 is consistent with processing unit area BSA#2. That is, processing unit area BSA#1 is the same as processing unit area BSA#2. Therefore, it can also be considered that the galvanometer mirror 2156 deflects the processing light EL#2 in a manner that moves the target irradiation area EA#2 within the processing unit area BSA#1. It can also be considered that the galvanometer mirror 2146 deflects the processing light EL#1 in a manner that moves the target irradiation area EA#1 within the processing unit area BSA#2. However, the processing unit area BSA#1 and the processing unit area BSA#2 may also be partially different.

[0162] When the molding surface MS is irradiated with processing light EL#2 in units of processing unit area BSA#2, a molten pool MP#2 is formed in at least a portion of the processing unit area BSA#2. As a result, a molding is formed in the processing unit area BSA#2. Here, as described above, the processing unit area BSA#2 is an area having a width in a direction intersecting with the moving direction of the processing unit area BSA#2 on the molding surface MS (specifically, the extension direction of the target moving trajectory MT0). In this case, a molding having a width along a direction intersecting with the target moving trajectory MT0 of the processing unit area BSA#2 is formed on the molding surface MS. For example, Figure 4 (a) and Figure 4 In the example shown in (b), a model is formed that has a width along the X-axis direction and extends along the Y-axis direction. Figure 5 (a) and Figure 5 In the example shown in (c), a shaped object having a width along the X-axis direction and extending along the Y-axis direction is shaped.

[0163] When the modeling surface MS is irradiated with processing light EL#2 in units of processing unit area BSA#2, the processing unit area BSA#2 is scanned with processing light EL#2 through the galvanometer mirror 2156. Therefore, compared with the case where the modeling surface MS is irradiated with processing light EL#2 without using the galvanometer mirror 2156, the possibility that the magnitude of the energy transferred from processing light EL#2 to processing unit area BSA#2 is uneven within processing unit area BSA#2 is reduced. That is, the energy transferred from processing light EL#2 to processing unit area BSA#2 can be uniformed. As a result, the processing system SYS can shape a modeling object on the modeling surface MS with relatively high modeling accuracy.

[0164] However, the processing system SYS may not irradiate the modeling surface MS with the processing light EL#2 in units of the processing unit area BSA#2. The processing system SYS may irradiate the modeling surface MS with the processing light EL#2 without using the galvanometer mirror 2156. In this case, the target irradiation area EA#2 may move on the modeling surface MS as at least one of the processing head 21 and the stage 31 moves.

[0165] Refer again Figure 3 , the processing light EL#2 reflected by the parallel plate 2152 is incident on the power meter 2153. The power meter 2153 is a specific example of an electrical component for controlling the processing light EL#2. Specifically, the power meter 2153 can detect the intensity of the processing light EL#2 incident on the power meter 2153. For example, the power meter 2153 may include a light receiving element that detects the processing light EL#2 as light. Alternatively, the higher the intensity of the processing light EL#2, the more energy the processing light EL#2 generates. As a result, the heat generated by the processing light EL#2 increases. Therefore, the power meter 2153 may also detect the intensity of the processing light EL#2 by detecting the processing light EL#2 as heat. In this case, the power meter 2153 may also include a heat detection element that detects the heat of the processing light EL#2.

[0166] As described above, the processing light EL#2 reflected by the parallel plate 2152 is incident on the power meter 2153. Therefore, the power meter 2153 detects the intensity of the processing light EL#2 reflected by the parallel plate 2152. Since the parallel plate 2152 is arranged on the optical path of the processing light EL#2 between the light source 4#2 and the galvanometer mirror 2156, the power meter 2153 can also be regarded as detecting the intensity of the processing light EL#2 traveling on the optical path between the light source 4#2 and the galvanometer mirror 2156. In this case, the power meter 2153 can stably detect the intensity of the processing light EL#2 without being affected by the deflection of the processing light EL#2 caused by the galvanometer mirror 2156. However, the configuration position of the power meter 2153 is not limited to Figure 3 For example, the power meter 2153 may detect the intensity of the processing light EL#2 traveling on the optical path between the galvanometer mirror 2156 and the modeling surface MS. The power meter 2153 may detect the intensity of the processing light EL#2 traveling on the optical path within the galvanometer mirror 2156.

[0167] The detection result of the power meter 2153 is output to the control unit 7. The control unit 7 can control (in other words, change) the intensity of the processing light EL#2 based on the detection result of the power meter 2153 (i.e., the detection result of the intensity of the processing light EL#2). For example, the control unit 7 can control the intensity of the processing light EL#2 in such a way that the intensity of the processing light EL#2 on the modeling surface MS becomes the desired intensity. In order to control the intensity of the processing light EL#2, for example, the control unit 7 can control the light source 4#2 based on the detection result of the power meter 2153, and change the intensity of the processing light EL#2 emitted from the light source 4#2. As a result, the processing system SYS can irradiate the modeling surface MS with the processing light EL#2 having a suitable intensity, thereby appropriately modeling the modeling object on the modeling surface MS.

[0168] As described above, the processing light EL#2 has an intensity capable of melting the modeling material M. Therefore, the processing light EL#2 incident on the power meter 2153 may have an intensity capable of melting the modeling material M. However, if the processing light EL#2 having an intensity capable of melting the modeling material M is incident on the power meter 2153, the power meter 2153 may be damaged by the processing light EL#2. Therefore, the processing light EL#2 having an intensity not high enough to damage the power meter 2153 may be incident on the power meter 2153. In other words, the second optical system 215 may weaken the intensity of the processing light EL#2 incident on the power meter 2153 so that the processing light EL#2 having an intensity not high enough to damage the power meter 2153 is incident on the power meter 2153.

[0169] For example, in order to reduce the intensity of the processing light EL#2 incident on the power meter 2153, the reflectivity of the parallel plate 2152 to the processing light EL#2 can be set to an appropriate value. Specifically, the lower the reflectivity of the parallel plate 2152 to the processing light EL#2, the lower the intensity of the processing light EL#2 incident on the power meter 2153. Therefore, the reflectivity of the parallel plate 2152 can be set to a value low enough to achieve the following state, that is, the processing light EL#2 with an intensity not high enough to damage the power meter 2153 is incident on the power meter 2153. For example, the reflectivity of the parallel plate 2152 can be less than 10%. For example, the reflectivity of the parallel plate 2152 can also be less than several%. As such a parallel plate 2152 with a low reflectivity, pure glass can be used.

[0170] For example, in order to weaken the intensity of the processing light EL#2 incident on the power meter 2153, the second optical system 215 may also allow the processing light EL#2 to be incident on the power meter 2153 via the plurality of parallel plates 2152. Specifically, the processing light EL#2 reflected multiple times by the plurality of parallel plates 2152 may be allowed to be incident on the power meter 2153. In this case, the intensity of the processing light EL#2 reflected multiple times by the plurality of parallel plates 2152 is weaker than the intensity of the processing light EL#2 reflected once by one parallel plate 2152. Therefore, the possibility that the processing light EL#2 having an intensity not high enough to damage the power meter 2153 is incident on the power meter 2153 increases.

[0171] The surface of the parallel plate 2152 (particularly at least one of the incident surface for the processing light EL#2 to be incident and the reflection surface for reflecting the processing light EL#2) may be subjected to a desired coating treatment. For example, the surface of the parallel plate 2152 may be subjected to an anti-reflection coating treatment (AR).

[0172] The third optical system 216 includes a prism 2161 and an fθ lens 2162 .

[0173] The processing light EL#1 emitted from the first optical system 214 and the processing light EL#2 emitted from the second optical system 215 are respectively incident on the prism 2161. The prism 2161 reflects the processing light EL#1 and EL#2 respectively toward the fθ lens 2162. The prism 2161 reflects the processing light EL#1 and EL#2 incident on the prism 2161 from different directions toward the same direction (specifically, toward the fθ lens 2162).

[0174] In addition, when both the processing light EL# 1 emitted from the first optical system 214 and the processing light EL# 2 emitted from the second optical system 215 can be directly incident on the fθ lens 2162 , the third optical system 216 may not include the prism 2161 .

[0175] The fθ lens 2162 is an optical system for causing the processing lights EL#1 and EL#2 reflected by the prism 2161 to be emitted toward the modeling surface MS. That is, the fθ lens 2162 is an optical system for causing the processing lights EL#1 and EL#2 reflected by the prism 2161 to be irradiated toward the modeling surface MS. As a result, the processing lights EL#1 and EL#2 passing through the fθ lens 2162 are irradiated toward the modeling surface MS.

[0176] The fθ lens 2162 may also be an optical element capable of focusing the processing light EL#1 and EL#2 on the focusing surface, respectively. In this case, the fθ lens 2162 may also be referred to as a focusing optical system. The focusing surface of the fθ lens 2162 may be set, for example, to the modeling surface MS. In this case, the third optical system 216 may also be regarded as a focusing optical system having a projection characteristic of fθ. However, the third optical system 216 may also have a focusing optical system having a projection characteristic different from fθ. For example, the third optical system 216 may also have a focusing optical system having a projection characteristic of f·tanθ. For example, the third optical system 216 may also have a focusing optical system having a projection characteristic of f·sinθ.

[0177] The optical axis AX of the fθ lens 2162 is an axis along the Z axis. Therefore, the fθ lens 2162 causes the processing light EL#1 and EL#2 to be emitted along the Z axis direction, respectively. In this case, the irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may be the same direction. The irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may both be the Z axis direction. The irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may also both be along the direction of the optical axis AX of the fθ lens 2162. However, the irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may not be the same direction. The irradiation direction of the processing light EL#1 and the irradiation direction of the processing light EL#2 may also be different directions.

[0178] (2) Operation of the machining system SYS

[0179] Next, the operation of the machining system SYS will be described.

[0180] (2-1) Additional processing actions performed by the processing system SYS

[0181] First, the additional processing (additional processing action) performed by the processing system SYS on the workpiece W is described. The additional processing performed on the workpiece W is equivalent to the action of shaping the shaped object by adding a shaped object that is integrated with the workpiece W (or can be separated from it) to the workpiece W. In the following, for the sake of convenience, the additional processing of shaping a three-dimensional structure ST as a shaped object having a desired shape is described. As described above, the processing system SYS shapes the three-dimensional structure ST by performing additional processing based on the laser cladding method. Therefore, the processing system SYS can shape the three-dimensional structure ST by performing the existing additional processing based on the laser cladding method. In the following, an example of the action of shaping the three-dimensional structure ST using the laser cladding method is briefly described.

[0182] The processing system SYS models a three-dimensional structure ST on the workpiece W based on the three-dimensional model data (in other words, three-dimensional model information) of the three-dimensional structure ST to be modeled. As the three-dimensional model data, measurement data of a solid object measured by at least one of a measuring device provided in the processing system SYS and a three-dimensional shape measuring instrument provided separately from the processing system SYS can be used. In order to model the three-dimensional structure ST, the processing system SYS models, for example, a plurality of layered partial structures (hereinafter referred to as "structure layers") SL arranged along the Z-axis direction in sequence. For example, the processing system SYS models a plurality of structure layers SL in sequence, layer by layer, based on data of a plurality of layers obtained by cutting the three-dimensional model of the three-dimensional structure ST into discs in the Z-axis direction. As a result, a layered structure formed by stacking a plurality of structure layers SL, i.e., a three-dimensional structure ST, is modeled. In addition, the structure layer SL may not necessarily be a modeled object having a layered shape. The following is an explanation of the process of the action of modeling the three-dimensional structure ST by modeling a plurality of structure layers SL in sequence, layer by layer.

[0183] First, refer to Figure 6 (a) to Figure 6 (e) The action of shaping each structural layer SL is described. Under the control of the control unit 7, the processing system SYS moves at least one of the processing head 21 and the platform 31 in such a manner as to set processing unit areas BSA#1 and BSA#2 in the desired area on the shaping surface MS corresponding to the surface of the workpiece W or the surface of the structural layer SL after shaping. Afterwards, the irradiation optical system 211 irradiates the processing unit areas BSA#1 and BSA#2 with processing light EL#1 and EL#2, respectively. At this time, in the Z-axis direction, the focusing positions CP#1 and CP#2 where the processing lights EL#1 and EL#2 respectively gather can be consistent with the shaping surface MS. Alternatively, in the Z-axis direction, the focusing positions CP#1 and CP#2 where the processing lights EL#1 and EL#2 respectively gather can also deviate from the shaping surface MS. As a result, as shown in FIG. Figure 6 As shown in (a), molten pools MP#1 and MP#2 are formed on the modeling surface MS irradiated by the processing light EL#1 and EL#2, respectively. Figure 6 As shown in (b), the processing system SYS supplies the modeling material M from the material nozzle 212 under the control of the control unit 7. As a result, the modeling material M is supplied to the molten pools MP#1 and MP#2, respectively. The modeling material M supplied to the molten pool MP#1 is melted by the processing light EL#1 irradiated to the molten pool MP#1. Similarly, the modeling material M supplied to the molten pool MP#2 is melted by the processing light EL#2 irradiated to the molten pool MP#2.

[0184] Furthermore, the irradiation optical system 211 utilizes the galvanometer mirrors 2146 and 2156 to move the target irradiation areas EA#1 and EA#2 within the processing unit areas BSA#1 and BSA#2, respectively. That is, the irradiation optical system 211 utilizes the galvanometer mirrors 2146 and 2156 to scan the processing unit areas BSA#1 and BSA#2 with the processing light EL#1 and EL#2, respectively. If the molten pool MP#1 is not irradiated with the processing light EL#1 as the target irradiation area EA#1 moves, the molten modeling material M in the molten pool MP#1 cools and solidifies (i.e., solidifies). Similarly, if the molten pool MP#2 is not irradiated with the processing light EL#2 as the target irradiation area EA#2 moves, the molten modeling material M in the molten pool MP#2 cools and solidifies (i.e., solidifies). Furthermore, as the target irradiation areas EA#1 and EA#2 move, the molten pools MP#1 and MP#2 also move. As a result, as shown in FIG. Figure 6 As shown in (c), in the processing unit areas BSA#1 and BSA#2 where the molten pools MP#1 and MP#2 move, the molded objects made of the solidified molding material M are deposited on the molding surface MS.

[0185] In addition, Figure 6 In (c), for ease of explanation, the molded object composed of the solidified modeling material M in the processing unit area BSA#1 and the molded object composed of the solidified modeling material M in the processing unit area BSA#2 are physically separated. However, the molded object composed of the solidified modeling material M in the processing unit area BSA#1 and the molded object composed of the solidified modeling material M in the processing unit area BSA#2 can also be integrated. In particular, when the processing unit areas BSA#1 and BSA#2 are consistent (or partially overlapped), the molded object composed of the solidified modeling material M in the processing unit area BSA#1 and the molded object composed of the solidified modeling material M in the processing unit area BSA#2 can also be integrated. While the target irradiation areas EA#1 and EA#2 are moving in the physically separated processing unit areas BSA#1 and BSA#2, respectively, the processing system SYS can move at least one of the processing head 21 and the platform 31, so that the processing unit areas BSA#1 and BSA#2 move on the modeling surface MS. That is, the processing system SYS can move the processing unit areas BSA#1 and BSA#2 on the modeling surface MS simultaneously with the movement of the target irradiation areas EA#1 and EA#2 within the processing unit areas BSA#1 and BSA#2, respectively.

[0186] Alternatively, during the period when the target irradiation areas EA#1 and EA#2 are respectively moved in the processing unit areas BSA#1 and BSA#2, the processing system SYS may not move the processing head 21 and the platform 31, thereby not moving the processing unit areas BSA#1 and BSA#2 on the molding surface MS. In this case, the processing system SYS may move at least one of the processing head 21 and the platform 31 in such a manner that the processing unit areas BSA#1 and BSA#2 are set to other areas on the molding surface MS after the additional processing (i.e. molding) in the processing unit areas BSA#1 and BSA#2 is completed. That is, the processing system SYS may move at least one of the processing head 21 and the platform 31 after the additional processing (i.e. molding) in the processing unit areas BSA#1 and BSA#2 is completed, thereby moving the processing unit areas BSA#1 and BSA#2 on the molding surface MS. In this case, the processing system SYS may move at least one of the processing head 21 and the platform 31 so that the area on the modeling surface MS where the processing unit areas BSA#1 and BSA#2 have been set (i.e., the area where the additional processing has been performed) is adjacent to the area on the modeling surface MS where the processing unit areas BSA#1 and BSA#2 have been newly set (i.e., the area to be additionally processed). In particular, the processing system SYS may move at least one of the processing head 21 and the platform 31 so that the area on the modeling surface MS where the processing unit areas BSA#1 and BSA#2 have been set does not overlap with the area on the modeling surface MS where the processing unit areas BSA#1 and BSA#2 have been newly set. However, the processing system SYS may move at least one of the processing head 21 and the platform 31 so that the area on the modeling surface MS where the processing unit areas BSA#1 and BSA#2 have been set partially overlaps with the area on the modeling surface MS where the processing unit areas BSA#1 and BSA#2 have been newly set.

[0187] like Figure 6 As shown in (d), the processing system SYS moves the processing unit areas BSA#1 and BSA#2 on the modeling surface MS along the target moving trajectory MT0 while repeating a series of modeling processes, and the series of modeling processes include the following actions: irradiating the processing unit area BSA#1 with processing light EL#1 to form a molten pool MP#1; irradiating the processing unit area BSA#2 with processing light EL#2 to form a molten pool MP#2; supplying modeling material M to the molten pools MP#1 and MP#2; melting the supplied modeling material M; and solidifying the molten modeling material M. In this case, as the processing unit areas BSA#1 and BSA#2 move respectively, a modeling object having a width along a direction intersecting the target moving trajectory MT0 is formed on the modeling surface MS. For example, in the processing unit areas BSA#1 and BSA#2, respectively, Figure 4 (a) and Figure 4When the processing unit areas BSA#1 and BSA#2 are moved as shown in (b), a shaped object having a width along the X-axis direction and extending along the Y-axis direction is formed. Figure 5 (a) and Figure 5 When the movement is performed as shown in (c), a modeled object having a width along the X-axis direction and extending along the Y-axis direction is formed.

[0188] Results, such as Figure 6 As shown in (e), a structure layer SL is formed on the molding surface MS, and the structure layer SL is equivalent to a molding object that is a collection of molding materials M that are melted and solidified. That is, a structure layer SL equivalent to a collection of molding objects formed on the molding surface MS in a pattern corresponding to the target movement trajectory MT0 of the processing unit areas BSA#1 and BSA#2 is formed. That is, a structure layer SL having a shape corresponding to the target movement trajectory MT0 of the processing unit areas BSA#1 and BSA#2 in a top view is formed.

[0189] Furthermore, when the target irradiation area EA#1 is set in an area where it is not desired to form a modeled object, the processing system SYS may not irradiate the target irradiation area EA#1 with the processing light EL#1. Alternatively, the processing system SYS may irradiate the target irradiation area EA#1 with the processing light EL#1 and stop supplying the modeling material M. Alternatively, the processing system SYS may supply the modeling material M to the target irradiation area EA#1 and irradiate the target irradiation area EA#1 with the processing light EL#1 whose intensity is insufficient to form the molten pool MP. The same is true when the target irradiation area EA#2 is set in an area where it is not desired to form a modeled object.

[0190] The target movement trajectory MT0 of each of the processing unit areas BSA#1 and BSA#2 may also be referred to as a processing path (in other words, a construction path (tool path)). In this case, the control unit 7 may move at least one of the processing head 21 and the platform 31 in such a manner that the processing unit areas BSA#1 and BSA#2 move along the target movement trajectory MT0 on the molding surface MS, based on the path information indicating the target movement trajectory MT0 (i.e., the path information indicating the processing path).

[0191] In addition to indicating the target moving trajectory MT0, the path information may also include information related to the target value of the width of the modeling object (hereinafter referred to as the "target width"). In addition, the target width may also be referred to as the line width or the weld bead width. Specifically, as described above, as the processing unit areas BSA#1 and BSA#2 move along the target moving trajectory MT0, on the modeling surface MS, a modeling object having a width along a direction intersecting the target moving trajectory MT0 is modeled on the modeling surface MS. For example, in the processing unit areas BSA#1 and BSA#2, respectively, Figure 7 When moving along the Y-axis direction as shown in (a), Figure 7 As shown in (b), a linear object having a width along the X-axis direction and extending along the Y-axis direction is formed on the forming surface MS. In addition, the structural layer SL is equivalent to Figure 7 In this case, if Figure 7 As shown in (b), the path information may include information related to the target value (i.e., target width) of the width D of the linear object. That is, the path information may include information related to the width of the linear object (i.e., line) to be molded on the molding surface MS. In addition, the information related to the target width of the linear object (i.e., information related to the width of the line to be molded) may also be referred to as line width information.

[0192] In this case, the control unit 7 can control the galvanometer mirrors 2146 and 2156, respectively, based on the line width information so that the target irradiation areas EA#1 and EA#2 are moved within the processing unit areas BSA#1 and BSA#2, respectively. For example, the control unit 7 can control the galvanometer mirrors 2146 and 2156, respectively, so that the target irradiation areas EA#1 and EA#2 are periodically moved inside the width of the line indicated by the line width information. That is, the control unit 7 can control the galvanometer mirrors 2146 and 2156, respectively, so that the target irradiation areas EA#1 and EA#2 do not deviate outside the width of the line indicated by the line width information. In other words, the control unit 7 can control the galvanometer mirrors 2146 and 2156, respectively, so that the target irradiation areas EA#1 and EA#2 are periodically moved inside the target width of the object indicated by the line width information. That is, the control unit 7 can control the galvanometer mirrors 2146 and 2156 respectively so that the target irradiation areas EA# 1 and EA# 2 do not deviate outside the target width of the object indicated by the line width information.

[0193] As a result, the molten pools MP#1 and MP#2 also periodically move inside the width of the line indicated by the line width information. That is, the molten pools MP#1 and MP#2 do not deviate outside the width of the line indicated by the line width information. In other words, the molten pools MP#1 and MP#2 periodically move inside the target width of the molded object indicated by the line width information. That is, the molten pools MP#1 and MP#2 do not deviate outside the target width of the molded object indicated by the line width information. Therefore, the processing system SYS can appropriately mold a linear molded object having the target width indicated by the line width information.

[0194] The width of the line indicated by the line width information (i.e., the target width of the object) may be the same as the width of each processing unit area BSA#1 and BSA#2. Alternatively, the width of the line indicated by the line width information (i.e., the target width of the object) may be smaller than the width of each processing unit area BSA#1 and BSA#2. In addition, the size of each processing unit area BSA#1 and BSA#2 in the X-axis direction and the size of each processing unit area BSA#1 and BSA#2 in the Y-axis direction may be several millimeters respectively. However, the size of each processing unit area BSA#1 and BSA#2 is not limited to several millimeters.

[0195] Under the control of the control unit 7, the processing system SYS repeatedly executes the action for shaping such a structural layer SL based on the three-dimensional model data. Specifically, first, before executing the action for shaping the structural layer SL, the control unit 7 slices the three-dimensional model data according to the stacking interval to generate slice data. Based on the slice data corresponding to the structural layer SL#1, the processing system SYS executes the action for shaping the first structural layer SL#1 on the shaping surface MS corresponding to the surface of the workpiece W. Specifically, the control unit 7 obtains the path information for shaping the first structural layer SL#1 generated based on the slice data corresponding to the structural layer SL#1. In addition, the path information can be generated by the control unit 7 after the processing system SYS starts additional processing or before the processing system SYS starts additional processing. Afterwards, the control unit 7 controls the processing unit 2 and the platform unit 3 based on the path information to shape the first structural layer SL#1. As a result, Figure 8 As shown in (a), a structure layer SL#1 is molded on the molding surface MS. Afterwards, the processing system SYS sets the surface (i.e., the upper surface) of the structure layer SL#1 as the new molding surface MS, and then molds the second structure layer SL#2 on the new molding surface MS. In order to mold the structure layer SL#2, the control unit 7 first controls at least one of the head drive system 22 and the platform drive system 32 in such a manner that the processing head 21 moves along the Z axis relative to the platform 31. Specifically, the control unit 7 controls at least one of the head drive system 22 and the platform drive system 32 in such a manner that the processing unit areas BSA#1 and BSA#2 are set on the surface (i.e., the new molding surface MS) of the structure layer SL#1, so that the processing head 21 moves toward the +Z side and / or the platform 31 moves toward the -Z side. Afterwards, under the control of the control unit 7, the processing system SYS molds the structure layer SL#2 on the structure layer SL#1 based on the slice data corresponding to the structure layer SL#2 in the same manner as that of molding the structure layer SL#1. As a result, as shown in FIG. Figure 8 As shown in (b), the structure layer SL#2 is formed. Thereafter, the same operation is repeated until all the structure layers SL constituting the three-dimensional structure ST to be formed on the workpiece W are formed. Figure 8As shown in (c), a three-dimensional structure ST is formed by stacking a plurality of structural layers SL.

[0196] (2-2) Melt pool feedback control action based on melt pool image IMG

[0197] The processing system SYS can perform a melt pool feedback control action based on the melt pool image IMG generated by the camera unit 8 simultaneously with the additional processing action. That is, the processing system SYS can perform the melt pool feedback control action during at least a part of the execution of the additional processing action. The melt pool feedback control action is to control the action of the processing unit 2 based on the melt pool image IMG so that the size of the melt pool area MPA in the melt pool image IMG becomes the target size TS. In addition, the melt pool area MPA will be described in detail below.

[0198] Below, refer to Fig. 9 The flow of the molten pool feedback control operation is described. Fig. 9 This is a flow chart showing the flow of the molten pool feedback control operation.

[0199] like Fig. 9 As shown, the control unit 7 obtains the molten pool image IMG from the camera unit 8 (step S11). Specifically, the camera unit 8 photographs the workpiece W or the structure layer SL on which the molten pools MP#1 and MP#2 are formed. That is, the camera unit 8 photographs the molten pools MP#1 and MP#2. As a result, the camera unit 8 generates a molten pool image IMG in which the molten pools MP#1 and MP#2 are captured. The camera unit 8 outputs the generated molten pool image IMG to the control unit 7. As a result, the control unit 7 obtains the molten pool image IMG.

[0200] The imaging unit 8 images the molten pools MP#1 and MP#2 in such a manner that the molten pools MP#1 and MP#2 are within the imaging range of the imaging unit 8. Specifically, the imaging unit 8 can be aligned with the workpiece W or the structural layer SL on which the molten pools MP#1 and MP#2 are formed so that the molten pools MP#1 and MP#2 are within the imaging range of the imaging unit 8. The imaging unit 8 can also align the machining head 21 so that the molten pools MP#1 and MP#2 formed on the molding surface MS by the machining head 21 are within the imaging range of the imaging unit 8. As a result, the imaging unit 8 can appropriately image the molten pools MP#1 and MP#2.

[0201] As described above, the molten pools MP#1 and MP#2 move in the processing unit areas BSA#1 and BSA#2 respectively through the galvanometer mirrors 2146 and 2156. In this case, the camera unit 8 can photograph the molten pool MP in such a manner that the moving range of the molten pools MP#1 and MP#2 is within the photographing range of the camera unit 8. That is, the camera unit 8 can photograph the molten pool MP in such a manner that the processing unit areas BSA#1 and BSA#2 are within the photographing range of the camera unit 8. Specifically, the camera unit 8 can be aligned with the workpiece W or the structure layer SL on which the molten pool MP is formed in such a manner that the moving range of the molten pools MP#1 and MP#2 (i.e., the processing unit areas BSA#1 and BSA#2) is within the photographing range of the camera unit 8. The camera unit 8 can also align the processing head 21 in such a manner that the moving range of the molten pools MP#1 and MP#2 (i.e., the processing unit areas BSA#1 and BSA#2) formed on the molding surface MS by the processing head 21 is within the photographing range of the camera unit 8. As a result, the imaging unit 8 can appropriately image the molten pools MP#1 and MP#2 moving in the processing unit areas BSA#1 and BSA#2, respectively.

[0202] The camera unit 8 can repeatedly photograph the workpiece W or the structural layer SL formed with the molten pool MP at a predetermined shooting rate. That is, the camera unit 8 can continuously photograph the workpiece W or the structural layer SL formed with the molten pool MP for multiple times at a predetermined shooting rate. In addition, the shooting rate can be an index value representing the number of times the camera unit 8 photographs the workpiece W or the structural layer SL per unit time (for example, per second). In other words, the camera unit 8 can repeatedly photograph the workpiece W or the structural layer SL every time a predetermined shooting cycle passes. For example, the camera unit 8 can photograph the workpiece W or the structural layer SL at a first moment, and then photograph the workpiece W or the structural layer SL at a second moment after a predetermined shooting cycle has passed from the first moment. In addition, the shooting cycle can be the inverse of the shooting rate. In this case, the camera unit 8 can generate a plurality of molten pool images IMG as time series data. The control unit 7 can obtain a plurality of molten pool images IMG as time series data.

[0203] While the camera unit 8 repeatedly photographs the workpiece W or the structure layer SL, the galvanometer mirror 2146 also moves the molten pool MP#1 within the processing unit area BSA#1. In this case, the camera unit 8 can photograph the molten pool MP#1 formed at a first position on the molding surface MS at a first moment, and then photograph the molten pool MP#1 formed at a second position on the molding surface MS different from the first position at a second moment different from the first moment. That is, the camera unit 8 can photograph the molten pool MP#1 appearing at a first position on the molding surface MS at a first moment, and then photograph the molten pool MP#1 appearing at a second position on the molding surface MS at a second moment. As a result, the multiple molten pool images IMG generated by the camera unit 8 can include a molten pool image IMG in which the molten pool MP#1 formed at the first position on the molding surface MS is photographed, and a molten pool image IMG in which the molten pool MP#1 formed at the second position on the molding surface MS is photographed. That is, the plurality of melt pool images IMG may include a melt pool image IMG representing a melt pool MP#1 formed at a first position on the molding surface MS, and a melt pool image IMG representing a melt pool MP#1 formed at a second position on the molding surface MS. The plurality of melt pool images IMG may include a melt pool image IMG generated by photographing a melt pool MP#1 formed at a first position on the molding surface MS, and a melt pool image IMG generated by photographing a melt pool MP#1 formed at a second position on the molding surface MS.

[0204] Similarly, while the camera unit 8 repeatedly photographs the workpiece W or the structure layer SL, the galvanometer mirror 2156 also moves the molten pool MP#2 within the processing unit area BSA#2. In this case, the camera unit 8 can photograph the molten pool MP#2 formed at the third position on the molding surface MS at a first moment, and then photograph the molten pool MP#2 formed at a fourth position on the molding surface MS different from the third position at a second moment different from the first moment. That is, the camera unit 8 can photograph the molten pool MP#2 appearing at the third position on the molding surface MS at a first moment, and then photograph the molten pool MP#2 appearing at the fourth position on the molding surface MS at a second moment. As a result, the multiple molten pool images IMG generated by the camera unit 8 can include a molten pool image IMG in which the molten pool MP#2 formed at the third position on the molding surface MS is photographed, and a molten pool image IMG in which the molten pool MP#2 formed at the fourth position on the molding surface MS is photographed. That is, the plurality of melt pool images IMG may include a melt pool image IMG representing a melt pool MP#2 formed at a third position on the molding surface MS, and a melt pool image IMG representing a melt pool MP#2 formed at a fourth position on the molding surface MS. The plurality of melt pool images IMG may include a melt pool image IMG generated by photographing a melt pool MP#2 formed at a third position on the molding surface MS, and a melt pool image IMG generated by photographing a melt pool MP#2 formed at a fourth position on the molding surface MS.

[0205] In addition, when the imaging unit 8 repeatedly photographs the workpiece W or the structure layer SL, it can be considered that the imaging unit 8 uses the light from the workpiece W or the structure layer SL to expose the imaging element multiple times. In this case, the multiple exposures of the imaging element can be called multiple exposures. That is, the imaging unit 8 can generate multiple molten pool images IMG as time series data by performing multiple exposures of the imaging element. In other words, the imaging unit 8 can generate multiple molten pool images IMG as time series data by performing multiple exposures of the imaging element to the molten pool MP. That is, the imaging unit 8 can generate multiple molten pool images IMG as a result of multiple exposures by performing multiple exposures of the imaging element to the molten pool MP.

[0206] Alternatively, when the imaging unit 8 repeatedly photographs the workpiece W or the structural layer SL, the imaging unit 8 may expose the imaging element multiple times using the light from the workpiece W or the structural layer SL in one photographing action for photographing one molten pool image IMG. In this case, the multiple exposures of the imaging element in one photographing action for photographing one molten pool image IMG may be referred to as multiple exposures. That is, the imaging unit 8 may generate one molten pool image IMG by performing multiple exposures of the imaging element. Furthermore, the imaging unit 8 may generate multiple molten pool images IMG as time series data by repeatedly performing multiple exposures of the imaging element for generating one molten pool image IMG. That is, the imaging unit 8 may generate multiple molten pool images IMG as a result of multiple exposures by performing multiple exposures of the imaging element on the molten pool MP.

[0207] Then, the control unit 7 generates melt pool image information MPI based on at least one melt pool image IMG obtained in step S11 (step S12). The melt pool image information MPI is information on the melt pools MP#1 and MP#2 captured in the melt pool image IMG.

[0208] As an example of the melt pool image information MPI, the control unit 7 may generate information related to the melt pool area MPA. Fig.10 As shown, the melt pool area MPA may include a region in which the melt pools MP# 1 and MP# 2 are captured in the melt pool image IMG.

[0209] In order to generate information related to the melt pool area MPA, the control unit 7 can use at least two of the multiple melt pool images IMG obtained as time series data in step S10. That is, the control unit 7 can generate information related to the melt pool area MPA using multiple melt pool images IMG corresponding to at least a part of the multiple melt pool images IMG obtained as time series data in step S10.

[0210] Specifically, Fig.11 The left side of shows a plurality of melt pool images IMG obtained as time series data. Fig.11As shown on the left side of , when the molten pool MP#1 moves through the galvanometer mirror 2146, the positions at which the molten pool MP#1 is captured may be different between the multiple molten pool images IMG. The reason is that, when the molten pool MP#1 moves through the galvanometer mirror 2146, as described above, the camera unit 8 may capture the molten pool MP#1 formed at a first position on the molding surface MS at a first moment, and then capture the molten pool MP#1 formed at a second position on the molding surface MS different from the first position at a second moment different from the first moment. In particular, when the exposure time of the camera unit 8 is shorter than a certain time, the positions at which the molten pool MP#1 is captured may be different between the multiple molten pool images IMG. For the same reason, when the molten pool MP#2 moves through the galvanometer mirror 2156, the positions at which the molten pool MP#2 is captured may be different between the multiple molten pool images IMG.

[0211] In this case, if Fig.11 As shown, in order to generate information related to the molten pool area MPA, the control unit 7 may also add at least two continuous molten pool images IMG among the multiple molten pool images IMG obtained in step S10, thereby generating an added image IMG_C. That is, the control unit 7 may also synthesize at least two continuous molten pool images IMG, thereby generating an added image IMG_C. In addition, the added image IMG_C may also be referred to as a synthesized image.

[0212] Specifically, the control unit 7 may add at least two consecutive molten pool images IMG in units of pixels. For example, the control unit 7 may add the signal values ​​of at least two consecutive molten pool images IMG in units of pixels. As an example of the signal value of the molten pool image IMG, a value related to brightness (i.e., brightness value) may be cited. The number of molten pool images IMG to be added may be preset. The number of molten pool images IMG to be added may be appropriately set by the control unit 7. The number of molten pool images IMG to be added, i.e., the number of added frames may also be appropriately set by the user of the processing system SYS.

[0213] In this case, the added image IMG_C may be an image in which the signal value of each pixel of the added image IMG_C is the sum of the signal values ​​of each pixel of at least two added molten pool images IMG. Specifically, the added image IMG_C may be an image in which the signal value of the pixel of the xth row and yth column of the added image IMG_C is the sum of the signal values ​​of the pixels of the xth row and yth column of at least two added molten pool images IMG. In addition, x is a variable representing an integer greater than 1 and less than the total number of pixels in the horizontal direction of each of the added image IMG_C and the molten pool image IMG. y is a variable representing an integer greater than 1 and less than the total number of pixels in the vertical direction of each of the added image IMG_C and the molten pool image IMG.

[0214] Alternatively, the added image IMG_C may be an image in which the signal value of each pixel of the added image IMG_C is the average value of the signal values ​​of each pixel of at least two added molten pool images IMG. For example, the added image IMG_C may be an image in which the signal value of the pixel of the xth row and yth column of the added image IMG_C is the average value of the signal values ​​of the pixels of the xth row and yth column of at least two added molten pool images IMG (i.e., the value obtained by dividing the sum of the signal values ​​by the number of added frames). In this case, the control unit 7 may calculate the sum of the signal values ​​of each pixel of at least two molten pool images IMG, and then divide the calculated sum by the number of added frames, thereby generating the added image IMG_C. Alternatively, the control unit 7 may divide the signal value of each pixel of the at least two molten pool images IMG by the number of added frames, and then calculate the sum of the signal values ​​of each pixel, thereby generating the added image IMG_C.

[0215] Alternatively, the added image IMG_C may also be an image in which the signal value of each pixel of the added image IMG_C is a moving average of the signal values ​​of each pixel of at least two melt pool images IMG added together. For example, the control unit 7 may calculate the moving average of the signal values ​​of each pixel of at least two melt pool images IMG obtained most recently, thereby generating the added image IMG_C. As an example, the control unit 7 may calculate the moving average of the signal values ​​of each pixel of ten melt pool images IMG assigned with the first frame to the tenth frame as indexes, thereby generating the first added image IMG_C, then calculate the moving average of the signal values ​​of each pixel of ten melt pool images IMG assigned with the second frame to the eleventh frame as indexes, thereby generating the second added image IMG_C, then calculate the moving average of the signal values ​​of each pixel of ten melt pool images IMG assigned with the third frame to the twelfth frame as indexes, thereby generating the third added image IMG_C. Thereafter, the control unit 7 may generate the added image IMG_C in the same manner.

[0216] Typically, the control unit 7 acquires the molten pool image IMG represented by the digital signal from the camera unit 8. In this case, the control unit 7 may add the multiple digital signals representing the multiple molten pool images IMG, thereby adding the multiple molten pool images IMG. For example, the control unit 7 may add the multiple digital signals using an adder that adds the input digital signals (i.e., an adder as hardware), thereby adding the multiple molten pool images IMG. For example, the control unit 7 may also add the digital signals loaded into the buffer after loading the digital signals into the buffer (i.e., adding the digital signals using software processing), thereby adding the multiple molten pool images IMG. Alternatively, the control unit 7 may also perform a predetermined image processing on the multiple molten pool images IMG, and then add the multiple digital signals representing the multiple molten pool images IMG that have been subjected to the predetermined image processing, thereby adding the multiple molten pool images IMG. As an example of the predetermined signal processing, at least one of gamma processing, denoising processing, and HDR (High Dynamic Range) processing may be cited.

[0217] Alternatively, the control unit 7 may also obtain the melt pool image IMG represented by the analog signal from the imaging unit 8. In this case, the control unit 7 may add the multiple analog signals respectively representing the multiple melt pool images IMG, thereby adding the multiple melt pool images IMG. Alternatively, the control unit 7 may also convert the analog signal into a digital signal. Thereafter, the control unit 7 may add the multiple digital signals respectively representing the multiple melt pool images IMG, similarly to the case of obtaining the melt pool image IMG represented by the digital signal from the imaging unit 8, thereby adding the multiple melt pool images IMG.

[0218] Afterwards, the control unit 7 can detect the melt pool area MPA in which the melt pools MP#1 and MP#2 are captured in the added image IMG_C. Fig.11 As shown on the left side of , in the molten pool image IMG, the signal value of the area where the molten pool MP is captured is different from the signal value of the area where the molten pool MP is not captured. The reason is that the molten pool MP emits strong light. Therefore, in the molten pool image IMG, the brightness value of the area where the molten pool MP is captured is different from the brightness value of the area where the molten pool MP is not captured. Typically, in the molten pool image IMG, the brightness value of the area where the molten pool MP is captured is higher than the brightness value of the area where the molten pool MP is not captured. Therefore, as shown in FIG. Fig.11As shown on the right side of , in the added image IMG_C, the signal value of the area where the melt pool MP is captured is different from the signal value of the area where the melt pool MP is not captured. That is, in the added image IMG_C, the signal value of the melt pool area MPA is different from the signal value of the area other than the melt pool area MPA. Typically, the brightness value of the melt pool area MPA is higher than the brightness value of the area other than the melt pool area MPA. Therefore, the control unit 7 can detect the melt pool area MPA in the added image IMG_C by comparing the signal value (e.g., brightness value) of each pixel of the added image IMG_C with a predetermined signal threshold.

[0219] For example, the control unit 7 can detect pixels having a signal value (e.g., brightness value) greater than a predetermined signal threshold value in the added image IMG_C. That is, the control unit 7 can detect pixels having a signal value (e.g., brightness value) greater than a predetermined signal threshold value in the added image IMG_C. In this case, the control unit 7 can detect the area including the detected pixels as the molten pool area MPA.

[0220] For example, the control unit 7 may set the signal value of a pixel having a signal value (e.g., brightness value) greater than a predetermined signal threshold value as a first signal value in the added image IMG_C. On the other hand, the control unit 7 may set the signal value of a pixel having a signal value (e.g., brightness value) less than a predetermined signal threshold value as a second signal value (e.g., 0) different from the first signal value in the added image IMG_C. Thereafter, the control unit 7 may detect an area including pixels having a signal value of the first signal value as a molten pool area MPA.

[0221] In this case, the signal value "1" may be used as the first signal value, and the signal value "0" may be used as the second signal value. That is, the control unit 7 may set the signal value of a pixel having a signal value greater than a predetermined signal threshold value in the added image IMG_C to 1. On the other hand, the control unit 7 may set the signal value of a pixel having a signal value less than a predetermined signal threshold value in the added image IMG_C to 0. Thereafter, the control unit 7 may detect an area including pixels having a signal value of 1 as the molten pool area MPA.

[0222] The signal threshold value can be set to a suitable value that can distinguish the molten pool area MPA from the area different from the molten pool area MPA according to the signal value (e.g., brightness value). The signal threshold value can be preset. The signal threshold value can be appropriately set by the control unit 7. The signal threshold value can also be appropriately set by the user of the processing system SYS.

[0223] The melt pool area MPA detected in the added image IMG_C can be substantially regarded as the area where the melt pools MP#1 and MP#2 move. In particular, the melt pool area MPA detected in the added image IMG_C can be substantially regarded as the area where the melt pools MP#1 and MP#2 move during the period when at least two melt pool images IMG used to generate the added image IMG_C are captured. Therefore, the melt pool area MPA can represent the area where the melt pools MP#1 and MP#2 move.

[0224] The molten pool area MPA detected in the added image IMG_C can also be regarded as a region where the processing system SYS continuously forms molten pools MP#1 and MP#2 at different positions. Therefore, the molten pool area MPA can also represent a region where the processing system SYS continuously forms molten pools MP#1 and MP#2 at different positions.

[0225] Afterwards, the control unit 7 can generate information related to the melt pool area MPA as the melt pool image information MPI based on the detection result of the melt pool area MPA. For example, as an example of information related to the melt pool area MPA, the control unit 7 can generate information related to the size of the melt pool area MPA. As an example, the control unit 7 can calculate the area of ​​the melt pool area MPA and generate information related to the calculated area of ​​the melt pool area MPA as the information related to the size of the melt pool area MPA. In this case, the control unit 7 can calculate the number of pixels constituting the melt pool area MPA as the area of ​​the melt pool area MPA. That is, the control unit 7 can calculate the number of pixels having a signal value (for example, a brightness value) greater than a predetermined signal threshold based on the added image IMG_C, thereby generating information related to the size of the melt pool area MPA.

[0226] However, the control unit 7 may generate information related to the melt pool area MPA using a single melt pool image IMG instead of a plurality of melt pool images IMG. Specifically, the control unit 7 may detect the melt pool area MPA in the melt pool image IMG by comparing the signal value (e.g., brightness value) of each pixel of the melt pool image IMG with a predetermined signal threshold. For example, the control unit 7 may detect pixels having a signal value (e.g., brightness value) greater than a predetermined signal threshold in the melt pool image IMG. In this case, the control unit 7 may detect the area containing the detected pixels as the melt pool area MPA. Thereafter, the control unit 7 may generate information related to the melt pool area MPA as the melt pool image information MPI based on the detection result of the melt pool area MPA.

[0227] Alternatively, if the exposure time of the imaging unit 8 is longer than a certain time, the possibility that the same melt pool area MPA as the melt pool area MPA captured in the added image IMG_C is captured in one melt pool image IMG increases. For example, if the exposure time of the imaging unit 8 is longer than a certain time determined according to the period in which the melt pools MP#1 and MP#2 periodically move, the possibility that the same melt pool area MPA as the melt pool area MPA captured in the added image IMG_C is captured in one melt pool image IMG increases. As an example, if the exposure time of the imaging unit 8 is longer than one period in which the melt pools MP#1 and MP#2 periodically move, the possibility that the same melt pool area MPA as the melt pool area MPA captured in the added image IMG_C is captured in one melt pool image IMG increases. Therefore, when the exposure time of the imaging unit 8 is longer than a certain time, the control unit 7 may generate the melt pool image information MPI without using a plurality of melt pool images IMG. In addition, the certain time may be the time required for one cycle of periodic movement of the molten pools MP#1 and MP#2. The certain time may also be half the time required for one cycle of periodic movement of the molten pools MP#1 and MP#2. The certain time may also be 1 / 3 of the time required for one cycle of periodic movement of the molten pools MP#1 and MP#2. The control unit 7 may generate the molten pool image information MPI using the single molten pool image IMG in which the molten pool area MPA is captured.

[0228] In addition, the exposure time of the imaging unit 8 may indicate the time during which the imaging element of the imaging unit 8 is exposed to light. For example, when the imaging unit 8 is provided with a mechanical shutter, the exposure time of the imaging unit 8 may indicate the time during which the state of the mechanical shutter is in an open state. That is, the exposure time of the imaging unit 8 may indicate the time from the timing when the state of the mechanical shutter is switched to the open state to the timing when the state of the mechanical shutter is switched to the closed state. The open state may indicate the state in which the mechanical shutter is opened. The closed state may indicate the state in which the mechanical shutter is closed. Alternatively, when the imaging unit 8 is provided with an electronic shutter, the exposure time of the imaging unit 8 may indicate the time during which the state of the electronic shutter is in an open state. That is, the exposure time of the imaging unit 8 may indicate the time from the timing when the state of the electronic shutter is switched to the open state to the timing when the state of the electronic shutter is switched to the closed state. The open state may indicate the state in which the electronic shutter is opened. The state in which the electronic shutter is opened may indicate the state in which each pixel of the imaging element is exposed in one shot and each pixel of the imaging element can store a charge based on the amount of light.

[0229] Alternatively, when the imaging unit 8 is equipped with a mechanical shutter, the imaging unit 8 may open / close the mechanical shutter multiple times at a timing synchronized with the shooting rate. In this case, it can also be regarded that the imaging unit 8 performs multiple exposures. Afterwards, the imaging unit 8 may read out the charges stored in each pixel of the imaging element. In this case, it is also highly likely that a molten pool area MPA identical to the molten pool area MPA captured in the addition image IMG_C is captured in a molten pool image IMG generated by the imaging unit 8. Therefore, the control unit 7 may generate the molten pool image information MPI using a single molten pool image IMG in which the molten pool area MPA is captured.

[0230] In the case where the imaging unit 8 is equipped with an electronic shutter, the imaging unit 8 may also open / close the electronic shutter multiple times in a timing synchronized with the shooting rate. In this case, the imaging unit 8 may also be regarded as performing multiple exposures. Afterwards, the imaging unit 8 may read out the charges stored in each pixel of the imaging element. In this case, it is also highly likely that a molten pool area MPA identical to the molten pool area MPA captured in the addition image IMG_C is captured in a molten pool image IMG generated by the imaging unit 8. Therefore, the control unit 7 may generate the molten pool image information MPI using a single molten pool image IMG in which the molten pool area MPA is captured. However, the imaging unit 8 may also read out the charges stored in each pixel of the imaging element each time the electronic shutter is opened / closed. In this case, it may be regarded that the imaging unit 8 substantially generates a plurality of molten pool images IMG as time series data.

[0231] Refer again Fig. 9 After that, the control unit 7 controls the processing system SYS based on the molten pool image information MPI generated in step S12 (step S13). Fig.12 As shown, the control unit 7 controls the processing system SYS based on the melt pool image information MPI so that the size of the melt pool area MPA becomes a predetermined target size TS.

[0232] As an example, the control unit 7 can control the intensity of at least one of the processing light EL#1 emitted by the light source 4#1 and the processing light EL#2 emitted by the light source 4#2 so that the size of the molten pool area MPA becomes a predetermined target size TS. That is, the control unit 7 can perform DC modulation control, that is, control the DC component of the intensity of at least one of the processing light EL#1 and EL#2. That is, if the intensity of the processing light EL#1 changes, the size of the molten pool MP#1 changes. For example, the higher the intensity of the processing light EL#1, the greater the component of the molding material M (or the material constituting the molding surface MS) melted by the processing light EL#1. Therefore, the higher the intensity of the processing light EL#1, the larger the size of the molten pool MP#1. Similarly, the higher the intensity of the processing light EL#2, the larger the size of the molten pool MP#2. If the sizes of the molten pools MP#1 and MP#2 change, the size of the molten pool area MPA captured in the molten pool image IMG or the added image IMG_C changes. Therefore, the control unit 7 can control the size of the melt pool area MPA by controlling the intensity of at least one of the processing lights EL# 1 and EL# 2 .

[0233] As another example, the control unit 7 may control at least one of the galvanometer mirrors 2146 and 2156 that respectively move the molten pools MP#1 and MP#2 so that the size of the molten pool area MPA becomes a predetermined target size TS. If the range in which the galvanometer mirror 2146 moves the molten pool MP#1 changes, the size of the molten pool area MPA captured in the molten pool image IMG or the added image IMG_C changes. Similarly, if the galvanometer mirror 2156 changes the range in which the molten pool MP#2 moves, the size of the molten pool area MPA captured in the molten pool image IMG or the added image IMG_C changes. Therefore, the control unit 7 can control the size of the molten pool area MPA by controlling at least one of the galvanometer mirrors 2146 and 2156.

[0234] The action of controlling the processing system SYS so that the size of the molten pool area MPA becomes the target size TS may include the action of controlling the processing system SYS so that the difference between the size of the molten pool area MPA and the target size TS is reduced. That is, the action of controlling the processing system SYS so that the size of the molten pool area MPA becomes the target size TS may include the action of controlling the processing system SYS so that the size of the molten pool area MPA approaches the target size TS. In addition, the action of controlling the processing system SYS so that the size of the molten pool area MPA becomes the target size TS may also include the action of controlling the processing system SYS so that the difference between the size of the molten pool area MPA and the target size TS is zero. That is, the action of controlling the processing system SYS so that the size of the molten pool area MPA becomes the target size TS may also include the action of controlling the processing system SYS so that the size of the molten pool area MPA becomes consistent with the target size TS. In either case, it can be regarded that the control unit 7 performs feedback control of the processing system SYS based on the size of the molten pool area MPA.

[0235] As a result, the size of the molten pool area MPA is maintained at the target size TS. Here, as described above, the molten pool area MPA corresponds to the area where the molten pools MP#1 and MP#2 move. Therefore, the size of the molten pool area MPA is substantially correlated with the sizes of the processing unit areas BSA#1 and BSA#2 where the molten pools MP#1 and MP#2 move, respectively. Therefore, if the size of the molten pool area MPA is maintained at the target size TS, the sizes of the processing unit areas BSA#1 and BSA#2 are also maintained at sizes corresponding to the target size TS. As a result, the size (typically the width) of the linear object formed by moving the processing unit areas BSA#1 and BSA#2 on the molding surface MS is also maintained at a size corresponding to the target size TS. The reason is that the size of the linear object is correlated with the size of the processing unit areas BSA#1 and BSA#2. Therefore, the processing system SYS can form a linear object with a desired size (typically the desired width) by executing the molten pool feedback control action. That is, the processing system SYS reduces the possibility of mistakenly molding a linear molded object having a size different from the expected size by executing the melt pool feedback control operation. Therefore, the processing system SYS can mold the molded object with high molding accuracy.

[0236] In addition, in the above description, the control unit 7 generates the melt pool image information MPI that is correlated with the size of the processing unit areas BSA#1 and BSA#2 by adding at least two melt pool images IMG. However, the control unit 7 may calculate the index value that is correlated with the size of the processing unit areas BSA#1 and BSA#2 (i.e., the size of the area where the melt pools MP#1 and MP#2 move) based on the at least two melt pool images IMG instead of adding at least two melt pool images IMG. In this case, the control unit 7 may calculate the index value that is correlated with the size of the processing unit areas BSA#1 and BSA#2 (i.e., the size of the area where the melt pools MP#1 and MP#2 move). Fig. 9 In step S13, the machining system SYS is controlled so that the calculated index value becomes the target size TS (or a value corresponding to the target size TS).

[0237] As an example, the control unit 7 may calculate the sizes of at least two melt pools MP captured in at least two melt pool images IMG. For example, the control unit 7 may calculate the size of the melt pool MP captured in the first melt pool image IMG, and calculate the sizes of the melt pools MP#1 and MP#2 captured in the second melt pool image IMG that is different from the first melt pool image IMG. Then, the control unit 7 may add the calculated sizes of the at least two melt pools MP. For example, the control unit 7 may add the sizes of the melt pools MP#1 and MP#2 captured in the first melt pool image IMG and the sizes of the melt pools MP#1 and MP#2 captured in the second melt pool image IMG. In this case, the value obtained by adding the sizes of the at least two melt pools MP can be used as an index value that is correlated with the sizes of the processing unit areas BSA#1 and BSA#2 (i.e., the sizes of the areas where the melt pools MP#1 and MP#2 move).

[0238] As another example, the control unit 7 may also calculate the positions of at least two melt pools MP captured in at least two melt pool images IMG. For example, the control unit 7 may calculate the positions of the melt pools MP#1 and MP#2 captured in the first melt pool image IMG, and calculate the positions of the melt pools MP#1 and MP#2 captured in the second melt pool image IMG different from the first melt pool image IMG. Afterwards, the control unit 7 may calculate the size of the processing unit areas BSA#1 and BSA#2 (i.e., the size of the area where the melt pools MP#1 and MP#2 move) based on the calculated positions of the at least two melt pools MP. For example, as described above, the target irradiation area EA#1 moves periodically along one direction within the processing unit area BSA#1, so the melt pool MP#1 also moves periodically along one direction. In this case, the control unit 7 may calculate the positions of the two end portions in one direction of the area where the melt pool MP#1 moves based on the calculated position of the melt pool MP#1. For example, the control unit 7 can calculate the position where the coordinates representing the position of the molten pool MP#1 are the largest, and the position where the coordinates representing the position of the molten pool MP#1 are the smallest, and use them as the positions of the two ends in one direction of the area where the molten pool MP#1 moves. After that, the control unit 7 can calculate the distance between the calculated positions of the two ends as an index value that is correlated with the size of the processing unit areas BSA#1 and BSA#2 (i.e., the size of the area where the molten pools MP#1 and MP#2 move). In this case, the control unit 7 can Fig. 9 In step S13, the machining system SYS is controlled so that the calculated index value becomes the distance corresponding to the target size TS described above.

[0239] (2-3) Area Detection Action

[0240] As mentioned above, in the melt pool feedback control action (especially Fig. 9 In step S12), the control unit 7 detects the molten pool area MPA. At this time, the control unit 7 can perform an area detection operation in order to detect the molten pool area MPA with good accuracy. That is, the control unit 7 can perform a molten pool feedback control operation including an example of an operation for detecting the molten pool area MPA with good accuracy, that is, an area detection operation.

[0241] The region detection operation is an operation of detecting at least one of the melt pool area MPA and the non-melt pool area NPA in the melt pool image IMG (or the added image IMG_C). In other words, the region detection operation may be an operation of determining (in other words, discriminating) whether each region in the melt pool image IMG (or the added image IMG_C) is the melt pool area MPA. The region detection operation may also be an operation of determining (in other words, discriminating) whether each region in the melt pool image IMG (or the added image IMG_C) is the non-melt pool area NPA.

[0242] The non-melt pool area NPA is an area where the melt pools MP#1 and MP#2 are not captured. The non-melt pool area NPA may be an area where light is captured even though the melt pools MP#1 and MP#2 are not captured. Specifically, the non-melt pool area NPA may be an area where at least one of the luminous light and the reflected light other than the melt pools MP#1 and MP#2 is captured. For example, the non-melt pool area NPA may include an area where luminous light of an object different from the melt pools MP#1 and MP#2 is captured. The non-melt pool area NPA may also include an area where reflected light from an object different from the melt pools MP#1 and MP#2 is captured. That is, the non-melt pool area NPA may be an area where light different from the light generated by the melt pools MP#1 and MP#2, that is, noise light, is captured.

[0243] The noise light may include light generated by spatters, which are generated by the molten material melted in at least one of the molten pools MP#1 and MP#2. For example, the noise light may include at least one of light emitted by the spatters and light reflected by the spatters. In this case, the non-molten pool area NPA may include an area where the spatters are captured.

[0244] The noise light may also include light generated by smoke, which is generated by the evaporation of the melt melted in at least one of the melt pools MP#1 and MP#2. For example, the noise light may also include at least one of light emitted by the smoke and light reflected by the smoke. In this case, the non-melt pool area NPA may also include an area into which the smoke is captured.

[0245] Noise light may also include light generated by irradiation of the processing light EL on the surface film of the workpiece W or the structure layer SL forming the modeling surface MS. In this case, the non-melting pool area NPA may also include an area into which light generated by irradiation of the processing light EL on the surface film of the workpiece W or the structure layer SL is captured.

[0246] The noise light may also include light generated by the molding material M that has not reached the molten pools MP#1 and MP#2. In particular, the noise light may also include light generated by the molding material M that has not reached the molten pools MP#1 and MP#2 despite being melted by at least one of the processing light EL#1 and EL#2. For example, the noise light may also include at least one of light emitted by the molding material M and light reflected by the molding material M. In particular, the noise light may also include at least one of light emitted by the molten molding material M and light reflected by the molten molding material M. In this case, the non-molten pool area NPA may also include an area into which the molding material M (especially the molten molding material M) is captured.

[0247] The control unit 7 may add at least two melt pool images IMG to generate a summed image IMG_C, and perform an area detection operation based on the generated summed image IMG_C. That is, the control unit 7 may detect at least one of the melt pool area MPA and the non-melt pool area NPA based on the summed image IMG_C.

[0248] Here, refer to Fig.13 and Fig.14 , the technical reason why at least one of the melt pool area MPA and the non-melt pool area NPA can be detected based on the added image IMG_C is described.

[0249] Fig.13 The molten pool image IMG is a picture of the molten pool area MPA and the non-molten pool area NPA. Fig.13 A molten pool image IMG is shown, which captures a molten pool area MPA equivalent to an area in which molten pools MP#1 and MP#2 are captured, and a non-molten pool area NPA equivalent to an area in which noise light different from the light generated by molten pools MP#1 and MP#2 is captured. Here, the light generated by molten pools MP#1 and MP#2 is captured in the molten pool area MPA, and the noise light is captured in the non-molten pool area NPA. That is, light is captured in both the molten pool area MPA and the non-molten pool area NPA. Therefore, the difference between the signal value of the pixel included in the molten pool area MPA and the signal value of the pixel included in the non-molten pool area NPA may not be too large. For example, the difference between the brightness value of the pixel included in the molten pool area MPA and the brightness value of the pixel included in the non-molten pool area NPA may not be too large. Therefore, it may not be easy to distinguish the molten pool area MPA from the non-molten pool area NPA using the signal threshold in one molten pool image IMG. That is, it may not be easy to distinguish the melt pool area MPA from the non-melt pool area NPA using one melt pool image IMG. As a result, the control unit 7 may mistakenly detect the non-melt pool area NPA as the melt pool area MPA.

[0250] On the other hand, as described above, the galvanometer mirrors 2146 and 2156 cause the molten pools MP#1 and MP#2 to periodically move within the processing unit areas BSA#1 and BSA#2 determined based on the processing head 21. Furthermore, since the imaging unit 8 is mounted on the processing head 21, the relative positional relationship between the imaging unit 8 and the processing unit areas BSA#1 and BSA#2 is fixed. Therefore, there is a high possibility that the position of the area where the molten pools MP#1 and MP#2 move within the molten pool image IMG remains consistent over time. As a result, there is a high possibility that the position of the molten pool area MPA captured within the molten pool image IMG remains consistent over time. That is, there is a low possibility that the position of the area where the molten pools MP#1 and MP#2 move will change significantly between multiple molten pool images IMG. Therefore, as shown in the multiple molten pool images IMG represented as time series data, Fig.14 As shown, it is less likely that the position where the melt pool area MPA is captured will vary significantly between the plurality of melt pool images IMG.

[0251] However, the position where the noise light that causes the non-melt pool area NPA is generated is not necessarily determined. Therefore, there is a high possibility that the position where the noise light that causes the non-melt pool area NPA is generated changes over time. Furthermore, there is a high possibility that the change in the position where the noise light that causes the non-melt pool area NPA is generated occurs at random probability. There is a high possibility that the position where the noise light that causes the non-melt pool area NPA is generated changes irregularly. Therefore, there is a high possibility that the position where the non-melt pool area NPA is captured in the melt pool image IMG changes irregularly over time. That is, as shown in the multiple melt pool images IMG as time series data, Fig.14 As shown, the position where the non-melt pool area NPA is captured may vary significantly between the plurality of melt pool images IMG.

[0252] Alternatively, noise light may not always be generated. Therefore, it is possible that the non-melt pool area NPA is not captured in the melt pool image IMG. That is, for example, a plurality of melt pool images IMG representing time series data Fig.14 As shown, the plurality of melt pool images IMG may include both melt pool images IMG in which the non-melt pool region NPA is captured and melt pool images IMG in which the non-melt pool region NPA is not captured.

[0253] In this case, if the Fig.14 The added image IMG_C is generated by adding the multiple melt pool images IMG shown in FIG. Fig.15As shown, in the added image IMG_C, there is a high possibility that the difference between the signal value of the pixel included in the melt pool area MPA and the signal value of the pixel included in the non-melt pool area NPA is large enough to distinguish the two. Specifically, in the added image IMG_C, there is a high possibility that the brightness value of the pixel included in the melt pool area MPA is high enough to distinguish the two compared to the brightness value of the pixel included in the non-melt pool area NPA.

[0254] Therefore, the control unit 7 can detect at least one of the melt pool area MPA and the non-melt pool area NPA based on the signal value (e.g., brightness value) of the added image IMG_C. Specifically, the control unit 7 can detect at least one of the melt pool area MPA and the non-melt pool area NPA by comparing the signal value (e.g., brightness value) of each pixel of the added image IMG_C with a predetermined signal threshold.

[0255] For example, the control unit 7 may detect, in the added image IMG_C, an area including pixels having a signal value (e.g., a brightness value) greater than a predetermined signal threshold as the melt pool area MPA. That is, the control unit 7 may detect, in the added image IMG_C, an area including pixels corresponding to the addition result of a signal value (e.g., a brightness value) greater than a predetermined signal threshold as the melt pool area MPA. The control unit 7 may generate melt pool image information MPI including information related to the melt pool area MPA based on the detected melt pool area MPA.

[0256] For example, the control unit 7 may detect, in the added image IMG_C, an area including pixels having a signal value (e.g., brightness value) smaller than a predetermined signal threshold as the non-melt pool area NPA. That is, the control unit 7 may detect, in the added image IMG_C, an area including pixels corresponding to the addition result of a signal value (e.g., brightness value) smaller than a predetermined signal threshold as the non-melt pool area NPA. In this case, the control unit 7 may generate the melt pool image information MPI including information related to the melt pool area MPA without using the detected non-melt pool area NPA.

[0257] However, the possibility of noise light being captured in pixels with too small signal values ​​(e.g., brightness values) is low. Therefore, the control unit 7 may also detect, in the added image IMG_C, an area including pixels with signal values ​​(e.g., brightness values) smaller than the predetermined signal threshold, i.e., the first signal threshold, and larger than the second signal threshold as a non-melting pool area NPA, wherein the second signal threshold is smaller than the first signal threshold. In addition, typically, the second signal threshold is greater than 0.

[0258] Furthermore, when executing the melt pool feedback control operation including the area detection operation, the signal threshold may be set to an appropriate value capable of distinguishing the melt pool area MPA from the non-melt pool area NPA based on the signal value (eg, brightness value).

[0259] As described above, the processing system SYS can detect at least one of the melt pool area MPA and the non-melt pool area NPA by performing the area detection action. Therefore, compared with the processing system of the comparative example that does not perform the area detection action, the possibility of the processing system SYS mistakenly detecting the non-melt pool area NPA as the melt pool area MPA is reduced. Therefore, the size of the melt pool area MPA will be maintained at the target size TS. As a result, the sizes of the processing unit areas BSA#1 and BSA#2 will also be maintained at sizes corresponding to the target size TS. Therefore, the processing system SYS can shape a linear object with a desired size (typically a desired width) by performing the melt pool feedback control action. That is, the processing system SYS can shape the object with higher shaping accuracy.

[0260] In addition, the ranges in which the galvanometer mirrors 2146 and 2156 move the molten pools MP#1 and MP#2, respectively, can be estimated with a certain degree of accuracy based on the driving conditions of the galvanometer mirrors 2146 and 2156. Therefore, the control unit 7 can estimate the ranges in which the galvanometer mirrors 2146 and 2156 move the molten pools MP#1 and MP#2, respectively, and estimate the boundaries of the range in which the molten pool area MPA is distributed based on the estimation results, and detect the area outside the estimated boundaries as the non-molten pool area NPA.

[0261] (2-4) Shooting condition change action

[0262] (2-4-1) Overview of Shooting Condition Change Operation

[0263] The processing system SYS can perform an imaging condition change action simultaneously with or before and after the molten pool feedback control action under the control of the control unit 7. That is, the processing system SYS can perform an imaging condition change action during at least a portion of the execution of the molten pool feedback control action. The processing system SYS can perform an imaging condition change action before performing the molten pool feedback control action. The processing system SYS can also perform an imaging condition change action after performing the molten pool feedback control action. Typically, the control unit 7 can perform an imaging condition change action.

[0264] The imaging condition changing action is an action to change (in other words, control, adjust or set) the imaging condition for imaging unit 8 to image molten pools MP#1 and MP#2. That is, the imaging condition changing action is an action to change the imaging condition for imaging unit 8 to image molten pools MP#1 and MP#2. The imaging condition changing action is an action to change the imaging condition set for imaging unit 8 to image molten pools MP#1 and MP#2.

[0265] The control unit 7 can change the shooting conditions in such a way that the camera unit 8 can properly shoot the molten pools MP#1 and MP#2. For example, the control unit 7 can change the shooting conditions in such a way that the camera unit 8 can generate a molten pool image IMG, which can enable the molten pool feedback control action to be properly executed. For example, the control unit 7 can also change the shooting conditions in such a way that the camera unit 8 can generate a molten pool image IMG sufficient to achieve the following state, that is, through the molten pool feedback control action, the processing system SYS can shape a linear object with a desired size (typically a desired width).

[0266] In this case, the imaging unit 8 images the molten pools MP#1 and MP#2 based on the imaging conditions changed by the control unit 7. That is, the control unit 7 controls the imaging unit 8 to image the molten pools MP#1 and MP#2 based on the imaging conditions changed by the control unit 7.

[0267] The imaging conditions may include conditions related to the imaging timing of the imaging unit 8 imaging the molten pools MP#1 and MP#2. In this case, the control unit 7 may change the imaging timing. Fig.16 As shown in (a) of FIG. 1 , the control unit 7 may change the shooting sequence so that the shooting sequence is earlier than the shooting sequence before the change. Fig.16 As shown in (a) of FIG. 1 , the control unit 7 may change the imaging timing so as to make the imaging timing later than the imaging timing before the change.

[0268] like Fig.16 As shown in (a), the conditions related to the imaging timing may include the timing at which the imaging unit 8 starts imaging the molten pools MP#1 and MP#2. Fig.16As shown in (a), the conditions related to the shooting timing may also include the timing at which the camera unit 8 ends the shooting of the molten pools MP#1 and MP#2. The timing at which the camera unit 8 starts shooting the molten pools MP#1 and MP#2 may represent the timing at which the camera unit 8 switches the state of the mechanical shutter from a closed state to an open state. The timing at which the camera unit 8 starts shooting the molten pools MP#1 and MP#2 may also represent the timing at which the camera unit 8 switches the state of the electronic shutter from a closed state to an open state. The timing at which the camera unit 8 ends the shooting of the molten pools MP#1 and MP#2 may represent the timing at which the camera unit 8 switches the state of the mechanical shutter from an open state to a closed state. The timing at which the camera unit 8 ends the shooting of the molten pools MP#1 and MP#2 may also represent the timing at which the camera unit 8 switches the state of the electronic shutter from an open state to a closed state.

[0269] In addition, in the case where it can be regarded as that the imaging unit 8 performs multiple exposure as described above, Fig.16 The shooting sequence shown in (a) can also be regarded as the timing of performing each of the multiple exposures in the multiple exposure. Fig.16 A pulse waveform shown in (a) shows the timing of performing one exposure in multiple exposures.

[0270] The imaging conditions may also include conditions related to the exposure time used by the imaging unit 8 to image the molten pools MP#1 and MP#2. In this case, the control unit 7 may also change the exposure time. Fig.16 As shown in (b) of FIG. 1 , the control unit 7 may change the exposure time so that the exposure time is shorter than the exposure time before the change. Fig.16 As shown in (b) of FIG. 7 , the control unit 7 may change the exposure time so as to make the exposure time longer than the exposure time before the change.

[0271] In addition, the definition of exposure time has been explained before, so detailed explanation is omitted. Fig.16 In the example shown in (b), the exposure time can represent the time from when the imaging unit 8 starts imaging the melt pools MP#1 and MP#2 to when the imaging unit 8 finishes imaging the melt pools MP#1 and MP#2.

[0272] In addition, in the case where it can be regarded as a case where the imaging unit 8 performs multiple exposures as described above, Fig.16 The exposure time shown in (b) can also be regarded as the time for each of the multiple exposures in the multiple exposure. Fig.16 One pulse waveform shown in (b) represents a period of performing one exposure in multiple exposure.

[0273] The imaging conditions may also include conditions related to the imaging cycle or imaging rate of the imaging unit 8 imaging the molten pools MP#1 and MP#2. In this case, the control unit 7 may also change the imaging cycle or imaging rate. Fig.16 As shown in (c) of FIG. 1 , the control unit 7 may change the shooting cycle in such a way that the shooting cycle is longer than the shooting cycle before the change. Fig.16 As shown in (c) of FIG. 1 , the control unit 7 may also change the shooting cycle in such a way that the shooting cycle is shorter than the shooting cycle before the change. Fig.16 As shown in (c) of FIG. 1 , the control unit 7 may change the shooting rate so that the shooting rate is lower than the shooting rate before the change. Fig.16 As shown in (c) of FIG. 7 , the control unit 7 may change the imaging rate so as to make the imaging rate higher than the imaging rate before the change.

[0274] In addition, the definitions of the imaging cycle and the imaging rate have been explained before, so detailed explanation is omitted. Fig.16 In the example shown in (c), the imaging cycle may indicate the time from when the imaging unit 8 starts imaging the molten pools MP#1 and MP#2 to when the imaging unit 8 starts imaging the molten pools MP#1 and MP#2 again. The imaging rate may indicate the number of times the imaging unit 8 starts imaging the molten pools MP#1 and MP#2 per unit time (e.g., per second).

[0275] As described above, the shooting rate may be the inverse of the shooting cycle. That is, the shooting cycle may be the inverse of the shooting rate. In this case, the action of changing the shooting rate in a way that reduces the shooting rate may be regarded as the action of changing the shooting cycle in a way that extends the shooting cycle. The action of changing the shooting rate in a way that increases the shooting rate may be regarded as the action of changing the shooting cycle in a way that shortens the shooting cycle.

[0276] In addition, in the case where it can be regarded as that the imaging unit 8 performs multiple exposure as described above, Fig.16 The shooting cycle shown in (c) can also be regarded as the cycle of each of the multiple exposures in the multiple exposure. Fig.16 The interval between two adjacent pulse waveforms shown in (b) represents the period of one exposure in multiple exposure. In addition, in the case where it can be regarded as multiple exposure by the imaging unit 8 as described above, Fig.16 The shooting rate shown in (c) can also be regarded as an index value indicating the number of exposures per unit time in multiple exposures (in addition, this index value can also be called exposure rate).

[0277] Furthermore, if the shooting conditions are changed, the action of the imaging unit 8 to generate the plurality of melt pool images IMG as time series data is changed. Considering that the imaging unit 8 can be regarded as generating the plurality of melt pool images IMG as time series data by performing multiple exposures as described above, the action of changing the shooting conditions can be regarded as the action of changing the multiple exposure conditions.

[0278] (2-4-2) Changes in Shooting Conditions Based on Processing Conditions

[0279] The control unit 7 can change the imaging condition based on the processing conditions of the processing system SYS processing the workpiece W. For example, the control unit 7 can change the imaging condition in such a way that the imaging unit 8 images the molten pools MP#1 and MP#2 based on the first imaging condition when the processing system SYS processes the workpiece W based on the first processing condition. For example, the control unit 7 can also change the imaging condition in such a way that the imaging unit 8 images the molten pools MP#1 and MP#2 based on the second imaging condition different from the first imaging condition when the processing system SYS processes the workpiece W based on the second processing condition different from the first processing condition.

[0280] The control unit 7 may also change the imaging condition so that the camera unit 8 can properly image the molten pools MP#1 and MP#2 even if the processing conditions are changed. For example, the control unit 7 may change the imaging condition to the first imaging condition so that when the processing system SYS processes the workpiece W based on the first processing condition, the camera unit 8 can properly image the molten pools MP#1 and MP#2 formed by the processing system SYS based on the first processing condition. For example, the control unit 7 may also change the imaging condition to the second imaging condition so that when the processing system SYS processes the workpiece W based on the second processing condition, the camera unit 8 can properly image the molten pools MP#1 and MP#2 formed by the processing system SYS based on the second processing condition.

[0281] The control unit 7 may also change the shooting condition based on the processing condition by using a shooting condition table that specifies the correspondence between the processing condition and the shooting condition. The shooting condition table may be a table that specifies the shooting condition that the camera unit 8 should use when the processing condition of the workpiece W is a certain processing condition. The shooting condition table may also be a table that records information related to the shooting condition that the camera unit 8 should use by associating it with the processing condition of the workpiece W. The shooting condition table may be stored (in other words, recorded) in the storage device 72. The shooting condition table may also be pre-generated by repeatedly executing the molten pool feedback control action while changing at least one of the processing condition and the shooting condition, and specifying the correspondence between the processing condition and the shooting condition that can achieve a state in which the molding accuracy of the linear molding object molded by the molten pool feedback control action is the desired accuracy.

[0282] (2-4-2-1) First Specific Example of Processing Conditions

[0283] The processing conditions may include light conditions related to at least one of the processing lights EL#1 and EL#2. In addition, since the processing lights EL#1 and EL#2 are each an example of an energy beam, the light conditions may also be referred to as beam conditions. The light conditions may include intensity conditions related to the intensity of at least one of the processing lights EL#1 and EL#2. In this case, the control unit 7 may change the shooting conditions based on the intensity of at least one of the processing lights EL#1 and EL#2 irradiated to the workpiece W for processing the workpiece W.

[0284] Here, as a first specific example of the action of changing the imaging condition, an example of the action of changing the imaging condition when the intensity of the processing light EL#k (in addition, k is a variable representing 1 and 2 respectively) is changed from the first intensity to the second intensity higher than the first intensity is described. In this case, since the intensity of the processing light EL#k is changed, the brightness value (or arbitrary signal value) of the pixel in the melt pool image IMG in which the melt pool MP#k is captured is also changed. In this case, the control unit 7 can change the imaging condition in such a manner that even if the intensity of the processing light EL#k is changed from the first intensity to the second intensity, the change amount of the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured is suppressed to be less than the first allowable amount. That is, the control unit 7 can change the imaging condition in such a manner that the difference between the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured when the intensity of the processing light EL#k is the first intensity and the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured when the intensity of the processing light EL#k is the second intensity is less than the first allowable amount. Typically, the control unit 7 can change the imaging condition so that even if the intensity of the processing light EL#k is changed from the first intensity to the second intensity, the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured is maintained constant. That is, the control unit 7 can change the imaging condition so that the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured when the intensity of the processing light EL#k is the first intensity is the same as the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured when the intensity of the processing light EL#k is the second intensity.

[0285] More specifically, if the intensity of the processing light EL#k increases, the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured increases. In this case, the control unit 7 can change the shooting conditions in such a manner that the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured is reduced compared to the case where the shooting conditions are not changed. For example, the shorter the exposure time as an example of the shooting conditions, the lower the brightness value of the pixel in the melt pool image IMG. Therefore, the control unit 7 can change the exposure time in such a manner that the exposure time is shortened. That is, the control unit 7 can change the exposure time in such a manner that the exposure time when the intensity of the processing light EL#k is the second intensity is shorter than the exposure time when the intensity of the processing light EL#k is the first intensity. As a result, the amount of change in the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured is suppressed to less than the first allowable amount. Depending on the situation, the brightness value of the pixel in the melt pool image IMG in which the melt pool MP#k is captured may also be maintained fixed.

[0286] Considering the first specific example of such an action of changing the shooting condition, the control unit 7 can change the exposure time so that the higher the intensity of the processing light EL#k, the shorter the exposure time. The control unit 7 can also change the exposure time so that the lower the intensity of the processing light EL#k, the longer the exposure time.

[0287] In addition, the higher the intensity of the processing light EL#k, the higher the density (for example, power density, which is actually flux) of the processing light EL#k. Therefore, the light conditions may also include conditions related to the density of the processing light EL#k. The action of changing the shooting conditions based on the intensity of the processing light EL#k may be regarded as the action of changing the shooting conditions based on the density of the processing light EL#k. The control unit 7 may change the shooting conditions based on the density of the processing light EL#k in the same way as the case of changing the shooting conditions based on the intensity of the processing light EL#k. For example, the control unit 7 may change the exposure time in such a way that the higher the density of the processing light EL#k, the shorter the exposure time. The control unit 7 may also change the exposure time in such a way that the lower the density of the processing light EL#k, the longer the exposure time.

[0288] (2-4-2-2) Second Specific Example of Processing Conditions

[0289] The processing conditions may also include movement pattern conditions related to the movement pattern of at least one of the target irradiation areas EA#1 and EA#2. In this case, the control unit 7 may change the shooting conditions based on the movement pattern of at least one of the target irradiation areas EA#1 and EA#2. In addition, as described above, the action of moving the target irradiation areas EA#1 and EA#2, respectively, may also be referred to as a shaking action. Therefore, the movement pattern conditions related to the movement pattern of at least one of the target irradiation areas EA#1 and EA#2 may also be referred to as a shaking condition.

[0290] Furthermore, since the target irradiation areas EA#1 and EA#2 are irradiated with processing lights EL#1 and EL#2, respectively, the movement pattern condition can be regarded as a condition related to the movement pattern of the irradiation position of at least one of the processing lights EL#1 and EL#2. Since the molten pools MP#1 and MP#2 are formed by irradiating the target irradiation areas EA#1 and EA#2 with processing lights EL#1 and EL#2, respectively, the movement pattern condition can also be regarded as a condition related to the movement pattern of the irradiation position of at least one of the molten pools MP#1 and MP#2. Since the target irradiation areas EA#1 and EA#2 are moved by deflecting processing lights EL#1 and EL#2, respectively, the movement pattern condition can also be regarded as a condition related to the deflection pattern of at least one of the processing lights EL#1 and EL#2.

[0291] The moving pattern of the target irradiation area EA#k may include the speed at which the target irradiation area EA#k moves. In particular, the moving pattern of the target irradiation area EA#k may include the speed at which the target irradiation area EA#k moves on the modeling surface MS. In addition, the speed at which the target irradiation area EA#k moves may be regarded as the speed at which the irradiation position of the processing light EL#k moves. In particular, the speed at which the target irradiation area EA#k moves may be regarded as the speed at which the irradiation position of the processing light EL#k moves on the modeling surface MS. The speed at which the target irradiation area EA#k moves may also be regarded as the speed at which the processing light EL#k deflects. The speed at which the processing light EL#1 deflects may be regarded as the rotation speed (swing speed) of at least one of the X scanning mirror 2146MX and the Y scanning mirror 2146MY of the galvanometer mirror 2146 that deflects the processing light EL#1. The speed at which the processing light EL#2 deflects may be regarded as the rotation speed (swing speed) of at least one of the X scanning mirror 2156MX and the Y scanning mirror 2156MY of the galvanometer mirror 2156 that deflects the processing light EL#2.

[0292] The movement pattern of the target irradiation area EA#k may also include the period of movement of the target irradiation area EA#k. In particular, the movement pattern of the target irradiation area EA#k may also include the period of periodic movement of the target irradiation area EA#k on the modeling surface MS. In addition, the period of movement of the target irradiation area EA#k may be regarded as the period of movement of the irradiation position of the processing light EL#k. In particular, the period of movement of the target irradiation area EA#k may be regarded as the period of periodic movement of the irradiation position of the processing light EL#k on the modeling surface MS. The period of movement of the target irradiation area EA#k may also be regarded as the period of deflection of the processing light EL#k. The period of deflection of the processing light EL#1 may be regarded as the rotation period (swing period) of at least one of the X scanning mirror 2146MX and the Y scanning mirror 2146MY of the galvanometer mirror 2146 that deflects the processing light EL#1. The period of deflection of the processing light EL# 2 can be regarded as the rotation period (swing period) of at least one of the X scanning mirror 2156MX and the Y scanning mirror 2156MY included in the galvanometer mirror 2156 that deflects the processing light EL# 2 .

[0293] The movement pattern of the target irradiation area EA#k may also include the stroke of the target irradiation area EA#k (i.e., the stroke amount or stroke width). The movement stroke may represent the amplitude of the reciprocating movement. In particular, the movement pattern of the target irradiation area EA#k may also include the stroke of the target irradiation area EA#k on the modeling surface MS. In addition, the stroke of the target irradiation area EA#k may be regarded as the stroke of the irradiation position of the processing light EL#k. In particular, the stroke of the target irradiation area EA#k may be regarded as the stroke of the irradiation position of the processing light EL#k on the modeling surface MS.

[0294] The movement pattern of the target irradiation area EA#k may also include a pattern of the movement trajectory of the target irradiation area EA#k. In particular, the movement pattern of the target irradiation area EA#k may also include a pattern of the periodic movement trajectory of the target irradiation area EA#k on the modeling surface MS. As an example of the pattern of the movement trajectory of the target irradiation area EA#k, there can be cited Figure 4 As another example of the pattern of the moving trajectory of the target irradiation area EA#k, there can be cited: Figure 5 In addition, the pattern of the moving trajectory of the target irradiation area EA#k can be regarded as the pattern of the moving trajectory of the irradiation position of the processing light EL#k. In particular, the pattern of the moving trajectory of the target irradiation area EA#k can be regarded as the pattern of the periodic moving trajectory of the irradiation position of the processing light EL#k on the modeling surface MS.

[0295] In addition, the movement pattern of the target irradiation area EA#1 is determined by the control signal for controlling the operation pattern of the X scanning mirror 2146MX and the Y scanning mirror 2146MY as the deflection optical system, so the control unit 7 can change the shooting conditions based on the control signal for controlling the X scanning mirror 2146MX and the Y scanning mirror 2146MY as the deflection optical system. Similarly, the movement pattern of the target irradiation area EA#2 is determined by the control signal for controlling the operation pattern of the X scanning mirror 2156MX and the Y scanning mirror 2156MY as the deflection optical system, so the control unit 7 can change the shooting conditions based on the control signal for controlling the X scanning mirror 2156MX and the Y scanning mirror 2156MY as the deflection optical system.

[0296] Here, as a second specific example of the action of changing the imaging condition, an example of the action of changing the imaging condition when the speed of the target irradiation area EA#k is changed from the first speed to the second speed that is faster than the first speed is described. In this case, the control unit 7 can change the imaging condition in such a manner that even if the speed of the target irradiation area EA#k is changed from the first speed to the second speed, the change in the number of times the imaging unit 8 images the molten pool MP#k during the unit movement of the target irradiation area EA#k is suppressed to be less than the second allowable amount. That is, the control unit 7 can change the imaging condition in such a manner that the difference between the number of times the imaging unit 8 images the molten pool MP#k during the unit movement when the speed of the target irradiation area EA#k is the first speed and the number of times the imaging unit 8 images the molten pool MP#k during the unit movement when the speed of the target irradiation area EA#k is the second speed becomes less than the second allowable amount. Typically, the control unit 7 can change the imaging condition in such a manner that the number of times the imaging unit 8 images the molten pool MP#k during a unit movement of the target irradiation area EA#k by the unit movement amount remains constant even if the speed at which the target irradiation area EA#k moves is changed from the first speed to the second speed. That is, the control unit 7 can change the imaging condition in such a manner that the number of times the imaging unit 8 images the molten pool MP#k during the unit movement when the speed at which the target irradiation area EA#k moves is the first speed is the same as the number of times the imaging unit 8 images the molten pool MP#k during the unit movement when the speed at which the target irradiation area EA#k moves is the second speed.

[0297] Furthermore, if the period of movement of the target irradiation area EA#k changes, the speed at which the target irradiation area EA#k moves changes. Typically, the shorter the period of movement of the target irradiation area EA#k, the faster the speed at which the target irradiation area EA#k moves. Therefore, the control unit 7 may also change the shooting conditions in the same manner as when the speed at which the target irradiation area EA#k moves changes from the first speed to the second speed faster than the first speed even if the period of movement of the target irradiation area EA#k changes from the first period to the second period. That is, the control unit 7 may also change the shooting conditions in such a manner that the amount of change in the number of times the camera unit 8 shoots the molten pool MP#k during the unit movement is suppressed to less than the second allowable amount even if the period of movement of the target irradiation area EA#k changes from the first period to the second period. Typically, the control unit 7 may change the shooting conditions in such a manner that the number of times the camera unit 8 shoots the molten pool MP#k during the unit movement remains fixed even if the period of movement of the target irradiation area EA#k changes from the first period to the second period.

[0298] When the shooting cycle of the camera unit 8 is fixed, the faster the speed of the target irradiation area EA#k moves, the shorter the unit movement period. Therefore, the faster the speed of the target irradiation area EA#k moves, the fewer times the camera unit 8 shoots the molten pool MP#k during the unit movement. Therefore, the control unit 7 can change the shooting cycle in a manner that shortens the shooting cycle. That is, the control unit 7 can change the shooting cycle in a manner that makes the shooting cycle when the speed of the target irradiation area EA#k moving at the second speed shorter than the shooting cycle when the speed of the target irradiation area EA#k moving at the first speed. The control unit 7 can also change the shooting cycle in a manner that makes the shooting cycle when the cycle of the target irradiation area EA#k moving at the second cycle shorter than the shooting cycle when the cycle of the target irradiation area EA#k moving at the first cycle. As a result, the change in the number of times the camera unit 8 shoots the molten pool MP#k during the unit movement is suppressed to less than the second allowable amount. Depending on the situation, the number of times the camera unit 8 shoots the molten pool MP#k during the unit movement may also remain fixed.

[0299] In addition, as described above, the shooting cycle is the inverse of the shooting rate. Therefore, the control unit 7 can change the shooting rate in such a way that the shooting rate is increased. That is, the control unit 7 can change the shooting rate in such a way that the shooting rate when the speed of the target irradiation area EA#k moving is the second speed is higher than the shooting rate when the speed of the target irradiation area EA#k moving is the first speed. The control unit 7 can also change the shooting rate in such a way that the shooting rate when the period of the target irradiation area EA#k moving is the second period is higher than the shooting rate when the period of the target irradiation area EA#k moving is the first period.

[0300] Considering the second specific example of such an action of changing the shooting condition, the control unit 7 may change the shooting cycle so that the faster the target irradiation area EA#k moves, the shorter the shooting cycle. The control unit 7 may also change the shooting cycle so that the slower the target irradiation area EA#k moves, the longer the shooting cycle. The control unit 7 may change the shooting cycle so that the shorter the moving cycle of the target irradiation area EA#k, the shorter the shooting cycle. The control unit 7 may also change the shooting cycle so that the longer the moving cycle of the target irradiation area EA#k, the longer the shooting cycle. The control unit 7 may change the shooting rate so that the faster the moving speed of the target irradiation area EA#k, the higher the shooting rate. The control unit 7 may also change the shooting rate so that the slower the moving speed of the target irradiation area EA#k, the lower the shooting rate. The control unit 7 may change the shooting rate so that the shorter the moving cycle of the target irradiation area EA#k, the higher the shooting rate. The control unit 7 may also change the shooting rate so that the longer the moving cycle of the target irradiation area EA#k, the lower the shooting rate.

[0301] The control unit 7 may also change the shooting sequence in addition to or instead of changing at least one of the shooting cycle and the shooting rate. For example, the control unit 7 may change the shooting sequence in such a way that the camera unit 8 can shoot the molten pool MP#k at an appropriate timing even if the speed at which the target irradiation area EA#k moves changes from the first speed to the second speed. Specifically, the control unit 7 may change the shooting sequence in such a way that the change in the position of the molten pool MP#k in the processing unit area BSA#k at the time when the camera unit 8 shoots the molten pool MP#k is suppressed to less than the third allowable amount even if the speed at which the target irradiation area EA#k moves changes from the first speed to the second speed. That is, the control unit 7 may change the shooting sequence in such a way that the difference between the position of the molten pool MP#k in the processing unit area BSA#k shot by the camera unit 8 when the speed at which the target irradiation area EA#k moves is the first speed and the position of the molten pool MP#k in the processing unit area BSA#k shot by the camera unit 8 when the speed at which the target irradiation area EA#k moves is the second speed becomes less than the third allowable amount. Typically, the control unit 7 can change the shooting timing in such a manner that even if the moving speed of the target irradiation area EA#k is changed from the first speed to the second speed, the position of the molten pool MP#k in the processing unit area BSA#k remains unchanged at the timing when the camera unit 8 shoots the molten pool MP#k. That is, the control unit 7 can change the shooting timing in such a manner that the position of the molten pool MP#k in the processing unit area BSA#k shot by the camera unit 8 when the moving speed of the target irradiation area EA#k is the first speed is the same as the position of the molten pool MP#k in the processing unit area BSA#k shot by the camera unit 8 when the moving speed of the target irradiation area EA#k is the second speed.

[0302] As described above, the processing system SYS can appropriately capture the molten pools MP#1 and MP#2 using the imaging unit 8 by executing the imaging condition change operation. The processing system SYS can appropriately capture the molten pools MP#1 and MP#2 using the imaging unit 8 even when the processing conditions are changed by executing the imaging condition change operation. Therefore, the processing system SYS can appropriately perform the molten pool feedback control operation using the molten pool image IMG generated by the imaging unit 8.

[0303] (2-5) Signal threshold change action

[0304] (2-5-1) Overview of signal threshold change operation

[0305] The processing system SYS can perform a signal threshold value changing action simultaneously with or before and after the molten pool feedback control action under the control of the control unit 7. That is, the processing system SYS can perform a signal threshold value changing action during at least a portion of the execution of the molten pool feedback control action. The processing system SYS can perform a signal threshold value changing action before performing the molten pool feedback control action. The processing system SYS can also perform a signal threshold value changing action after performing the molten pool feedback control action. Typically, the control unit 7 can perform a signal threshold value changing action.

[0306] The signal threshold value changing operation is an operation to change (in other words, control, adjust or set) the signal threshold value for detecting the molten pool area MPA. That is, the signal threshold value changing operation is an operation to change the signal threshold value for detecting the molten pool area MPA by the control unit 7.

[0307] The control unit 7 may change the signal threshold in such a manner that the control unit 7 can appropriately detect the molten pool area MPA. For example, the control unit 7 may change the signal threshold in such a manner that the control unit 7 can detect the molten pool area MPA, which can generate appropriate molten pool image information MPI. For example, the control unit 7 may also change the signal threshold in such a manner that the control unit 7 can appropriately detect the molten pool area MPA, which has a size that is correlated with the sizes of the processing unit areas BSA#1 and BSA#2. For example, the control unit 7 may also change the signal threshold in such a manner that the control unit 7 can appropriately detect the molten pool area MPA, which has a size that is correlated with the size of the linear object formed on the forming surface MS. For example, the control unit 7 may also change the signal threshold in such a manner that the control unit 7 can detect the molten pool area MPA, which can appropriately perform the molten pool feedback control action. For example, the control unit 7 may also change the signal threshold in such a manner that the control unit 7 can detect a molten pool area MPA sufficient to achieve a state in which, through the molten pool feedback control action, the processing system SYS can shape a linear object having a desired size (typically a desired width).

[0308] In this case, the control unit 7 detects the melt pool area MPA using the signal threshold value changed by the control unit 7. That is, the control unit 7 uses the signal threshold value changed by the control unit 7 to perform the melt pool feedback control operation.

[0309] (2-5-2) Changes in signal thresholds based on processing conditions

[0310] The control unit 7 may change the signal threshold value based on the processing conditions under which the processing system SYS processes the workpiece W. For example, the control unit 7 may change the signal threshold value in such a manner that when the processing system SYS processes the workpiece W based on the first processing condition, the control unit 7 detects the molten pool area MPA using the first signal threshold value. For example, the control unit 7 may also change the signal threshold value in such a manner that when the processing system SYS processes the workpiece W based on the second processing condition different from the first processing condition, the control unit 7 detects the molten pool area MPA using the second signal threshold value different from the first signal threshold value.

[0311] The control unit 7 may also change the signal threshold value in such a manner that the control unit 7 can appropriately detect the molten pool area MPA even if the processing conditions are changed. For example, the control unit 7 may change the signal threshold value to the first signal threshold value in such a manner that when the processing system SYS processes the workpiece W based on the first processing condition, the control unit 7 can appropriately detect the molten pool area MPA when the processing system SYS is processing the workpiece W based on the first processing condition. For example, the control unit 7 may also change the signal threshold value to the second signal threshold value in such a manner that when the processing system SYS processes the workpiece W based on the second processing condition, the control unit 7 can appropriately detect the molten pool area MPA when the processing system SYS is processing the workpiece W based on the second processing condition.

[0312] The control unit 7 may also change the signal threshold value based on the processing condition by using a signal threshold value table that specifies the correspondence between the processing condition and the signal threshold value. The signal threshold value table may be a table that specifies the signal threshold value that the control unit 7 should use when the processing condition of the workpiece W is a certain processing condition. The signal threshold value table may also be a table that records information related to the signal threshold value that the control unit 7 should use by associating it with the processing condition of the workpiece W. The signal threshold value table may be stored (in other words, recorded) in the storage device 72. The signal threshold value table may be generated in advance by repeatedly executing the molten pool feedback control action while changing at least one of the processing condition and the signal threshold value, and specifying the correspondence between the processing condition and the signal threshold value that can achieve a state in which the molding accuracy of the linear molding object molded by the molten pool feedback control action is the desired accuracy.

[0313] (2-5-2-1) First Specific Example of Processing Conditions

[0314] As described above, the processing conditions may include an intensity condition related to the intensity of at least one of the processing lights EL#1 and EL#2. The control unit 7 may change the signal threshold based on the intensity of at least one of the processing lights EL#1 and EL#2 irradiated to the workpiece W for processing the workpiece W.

[0315] Here, as a first specific example of the action of changing the signal threshold, an example of the action of changing the signal threshold when the intensity of the processing light EL#k is changed from a first intensity to a second intensity higher than the first intensity is described. In this case, since the intensity of the processing light EL#k increases, the brightness value (or arbitrary signal value) of the pixel in the molten pool image IMG in which the molten pool MP#k is captured also increases. In this case, the control unit 7 can change the signal threshold in a manner that increases the signal threshold. That is, the control unit 7 can change the signal threshold in a manner that increases the signal threshold as the intensity of the processing light EL#k increases. The control unit 7 can also change the signal threshold in a manner that decreases the signal threshold as the intensity of the processing light EL#k decreases.

[0316] In this case, the control unit 7 can appropriately detect the area to be detected as the melt pool area MPA as the melt pool area MPA. Specifically, Fig.17 A histogram showing the brightness value of the melt pool image IMG when the intensity of the processing light EL#k is the first intensity, and a histogram showing the brightness value of the melt pool image IMG when the intensity of the processing light EL#k is the second intensity. Fig.17 As shown in FIG. 1 , if the signal threshold is not changed when the intensity of the processing light EL#k is changed from the first intensity to the second intensity higher than the first intensity, the brightness value of the area that should not be detected as the melt pool area MPA may become higher than the unchanged signal threshold. Therefore, the control unit 7 may mistakenly detect the area that should not be detected as the melt pool area MPA as the melt pool area MPA. On the other hand, if Fig.17 As shown in FIG. 1 , if the signal threshold is changed when the intensity of the processing light EL#k is changed from the first intensity to the second intensity, the brightness value of the area that should not be detected as the melt pool area MPA becomes lower than the changed signal threshold. Therefore, the possibility that the control unit 7 mistakenly detects the area that should not be detected as the melt pool area MPA as the melt pool area MPA is reduced. As a result, the control unit 7 can appropriately detect the area that should be detected as the melt pool area MPA as the melt pool area MPA. That is, the control unit 7 can detect the melt pool area MPA with good accuracy.

[0317] Fig.18 The histogram of the brightness value of the melt pool image IMG when the intensity of the processing light EL#k is the first intensity and the histogram of the brightness value of the melt pool image IMG when the intensity of the processing light EL#k is the second intensity are also shown. Fig.18As shown in FIG. 1 , the unchanged signal threshold is set to a value that can distinguish the melt pool area MPA from the non-melt pool area NPA in the melt pool image IMG when the intensity of the processing light EL#k is the first intensity. In this case, if the intensity of the processing light EL#k is changed from the first intensity to the second intensity, the brightness of the area that should be detected as the non-melt pool area NPA may increase. The reason is that the non-melt pool area NPA includes an area that captures the noise light generated by the irradiation of the processing light EL. If the intensity of the processing light EL increases, the intensity of the noise light may also increase. As a result, Fig.18 As shown in FIG. 1 , if the signal threshold is not changed when the intensity of the processing light EL#k is changed from the first intensity to the second intensity, the brightness value of the area to be detected as the non-melting pool area NPA may become higher than the unchanged signal threshold. Therefore, the control unit 7 may mistakenly detect the area to be detected as the non-melting pool area NPA as the melting pool area MPA. On the other hand, if Fig.18 As shown in FIG. 1 , if the signal threshold is changed when the intensity of the processing light EL#k is changed from the first intensity to the second intensity, the brightness value of the area to be detected as the non-melt pool area NPA becomes lower than the changed signal threshold. Therefore, the possibility that the control unit 7 mistakenly detects the area to be detected as the non-melt pool area NPA as the melt pool area MPA is reduced. As a result, the control unit 7 can appropriately detect the area to be detected as the melt pool area MPA as the melt pool area MPA. That is, the control unit 7 can detect the melt pool area MPA with good accuracy.

[0318] In addition, as described above, the processing conditions may also include conditions related to the density of the processing light EL#k. In this case, the action of changing the signal threshold based on the intensity of the processing light EL#k may be regarded as the action of changing the signal threshold based on the density of the processing light EL#k. The control unit 7 may change the signal threshold based on the density of the processing light EL#k in the same manner as the case of changing the signal threshold based on the intensity of the processing light EL#k. For example, the control unit 7 may change the signal threshold in such a manner that the higher the density of the processing light EL#k, the larger the signal threshold. The control unit 7 may also change the signal threshold in such a manner that the lower the density of the processing light EL#k, the smaller the signal threshold.

[0319] (2-5-2-2) Second Specific Example of Processing Conditions

[0320] As described above, the processing conditions may include a movement pattern condition related to the movement pattern of at least one of the target irradiation areas EA#1 and EA#2. The control unit 7 may also change the signal threshold based on the movement pattern of at least one of the target irradiation areas EA#1 and EA#2.

[0321] Here, as a second specific example of the action of changing the signal threshold, an example of the action of changing the signal threshold when the speed of movement of the target irradiation area EA#k is changed from a first speed to a second speed faster than the first speed is described. In this case, since the moving speed of the target irradiation area EA#k is accelerated, the energy transmitted from the processing light EL#k to the modeling surface MS per unit time is reduced. Therefore, the brightness value (or arbitrary signal value) of the pixel in which the molten pool MP#k is captured in the molten pool image IMG is reduced. In this case, the control unit 7 can change the signal threshold in a manner that reduces the signal threshold. That is, the control unit 7 can change the signal threshold in a manner that the faster the speed of movement of the target irradiation area EA#k, the smaller the signal threshold. The control unit 7 can also change the signal threshold in a manner that the slower the speed of movement of the target irradiation area EA#k, the larger the signal threshold.

[0322] In this case, the control unit 7 can appropriately detect the area to be detected as the melt pool area MPA as the melt pool area MPA. Specifically, Fig.19 A histogram showing the brightness value of the melt pool image IMG when the target irradiation area EA#k moves at the first speed, and a histogram showing the brightness value of the melt pool image IMG when the target irradiation area EA#k moves at the second speed. Fig.19 As shown in FIG. 1 , if the signal threshold is not changed when the speed at which the target irradiation area EA#k moves is changed from the first speed to the second speed that is faster than the first speed, the brightness value of the area to be detected as the molten pool area MPA may become lower than the unchanged signal threshold. Therefore, the control unit 7 may not detect the area to be detected as the molten pool area MPA as the molten pool area MPA. On the other hand, if the signal threshold is changed when the speed at which the target irradiation area EA#k moves is changed from the first speed to the second speed, the brightness value of the area to be detected as the molten pool area MPA may become higher than the changed signal threshold. Therefore, the control unit 7 can appropriately detect the area to be detected as the molten pool area MPA as the molten pool area MPA. That is, the control unit 7 can detect the molten pool area MPA with good accuracy.

[0323] Fig. 20 It also shows a histogram of the brightness value of the melt pool image IMG when the target irradiation area EA#k moves at the first speed, and a histogram of the brightness value of the melt pool image IMG when the target irradiation area EA#k moves at the second speed. Fig. 20As shown, the unchanged signal threshold is set to a value that can distinguish the melt pool area MPA from the non-melt pool area NPA in the melt pool image IMG when the speed at which the target irradiation area EA#k moves is the first speed. In this case, if the speed at which the target irradiation area EA#k moves is changed from the first speed to the second speed, the brightness of the area that should be detected as the melt pool area MPA decreases. As a result, the brightness value of the area that should be detected as the melt pool area MPA may become lower than the unchanged signal threshold. Therefore, if the signal threshold is not changed when the speed at which the target irradiation area EA#k moves is changed from the first speed to the second speed, the control unit 7 may mistakenly detect the area that should be detected as the melt pool area MPA as the non-melt pool area NPA. On the other hand, if the signal threshold is changed when the speed at which the target irradiation area EA#k moves is changed from the first speed to the second speed, the brightness value of the area that should be detected as the melt pool area MPA becomes higher than the changed signal threshold. Therefore, the control unit 7 can appropriately detect the area that should be detected as the melt pool area MPA as the melt pool area MPA. That is, the control unit 7 can detect the melt pool area MPA with high accuracy.

[0324] Furthermore, as described above, if the period of movement of the target irradiation area EA#k changes, the speed at which the target irradiation area EA#k moves changes. Therefore, the control unit 7 may also change the signal threshold in the same manner as when the speed at which the target irradiation area EA#k moves changes from the first speed to the second speed faster than the first speed, even if the period of movement of the target irradiation area EA#k changes from the first period to the second period shorter than the first period. That is, the control unit 7 may change the signal threshold in such a manner that the shorter the period of movement of the target irradiation area EA#k, the smaller the signal threshold. The control unit 7 may also change the signal threshold in such a manner that the longer the period of movement of the target irradiation area EA#k, the larger the signal threshold.

[0325] As described above, the processing system SYS can appropriately detect the molten pool area MPA by performing the signal threshold value changing action. The processing system SYS can appropriately (for example, with good accuracy) detect the molten pool area MPA using the control unit 7 even if the processing conditions are changed by performing the signal threshold value changing action. Therefore, the processing system SYS can appropriately perform the molten pool feedback control action using the molten pool area MPA detected by the control unit 7.

[0326] (2-6) Addition frame number change action

[0327] (2-6-1) Overview of the added frame number change operation

[0328] As described above, in the molten pool feedback control action, the processing system SYS adds a plurality of molten pool images IMG to generate an added image IMG_C in order to detect the molten pool area MPA. In this case, the processing system SYS can, under the control of the control unit 7, perform an addition frame number change action simultaneously with or before and after the molten pool feedback control action. That is, the processing system SYS can perform an addition frame number change action during at least a portion of the execution of the molten pool feedback control action. The processing system SYS can perform an addition frame number change action before performing the molten pool feedback control action. The processing system SYS can also perform an addition frame number change action after performing the molten pool feedback control action. Typically, the control unit 7 can perform an addition frame number change action.

[0329] The addition frame number change operation is an operation of changing (in other words, controlling, adjusting or setting) the number of melt pool images IMG to be added in order to generate the addition image IMG_C. That is, the addition frame number change operation is an operation of changing the number of melt pool images IMG to be added by the control unit 7 in order to generate the addition image IMG_C. In addition, in the following description, the number of melt pool images IMG to be added in order to generate the addition image IMG_C is referred to as the "addition frame number".

[0330] The control unit 7 may change the number of added frames in such a manner that the control unit 7 can appropriately detect the molten pool area MPA. For example, the control unit 7 may change the number of added frames in such a manner that the control unit 7 can detect the molten pool area MPA, which can generate appropriate molten pool image information MPI. For example, the control unit 7 may also change the number of added frames in such a manner that the control unit 7 can appropriately detect the molten pool area MPA, which has a size that is correlated with the sizes of the processing unit areas BSA#1 and BSA#2. For example, the control unit 7 may also change the number of added frames in such a manner that the control unit 7 can appropriately detect the molten pool area MPA, which has a size that is correlated with the size of the linear object formed on the forming surface MS. For example, the control unit 7 may also change the number of added frames in such a manner that the control unit 7 can detect the molten pool area MPA, which can appropriately execute the molten pool feedback control action. For example, the control unit 7 may also change the number of added frames in a manner that enables the control unit 7 to detect a molten pool area MPA sufficient to achieve the following state, namely, through the molten pool feedback control action, the processing system SYS can shape a linear shape having a desired size (typically a desired width).

[0331] In this case, the control unit 7 generates the added image IMG_C using the added frame number changed by the control unit 7. That is, the control unit 7 adds the same number of melt pool images IMG as the added frame number changed by the control unit 7 to generate the added image IMG_C.

[0332] Furthermore, if the number of added frames is changed, the action of the imaging unit 8 for generating a plurality of melt pool images IMG as time series data is changed. Considering that the imaging unit 8 can be regarded as generating a plurality of melt pool images IMG as time series data by performing multiple exposures as described above, the action of changing the number of added frames can be regarded as the action of changing the multiple exposure conditions. Specifically, the number of added frames can be regarded as the number of exposures that should be performed to generate one melt pool image IMG generated by multiple exposures. In this case, the action of changing the number of added frames can be regarded as the action of changing the number of exposures that should be performed to generate one melt pool image IMG generated by multiple exposures.

[0333] (2-6-2) Changes in the number of added frames based on processing conditions

[0334] The control unit 7 can change the number of added frames based on the processing conditions of the processing system SYS processing the workpiece W. For example, the control unit 7 can change the number of added frames in a manner that when the processing system SYS processes the workpiece W based on the first processing condition, the control unit 7 adds the same number of molten pool images IMG as the first number of frames to generate the added image IMG_C. For example, the control unit 7 can also change the number of added frames in a manner that when the processing system SYS processes the workpiece W based on the second processing condition different from the first processing condition, the control unit 7 adds the same number of molten pool images IMG as the second number of frames to generate the added image IMG_C, and the second number of frames is different from the first number of frames.

[0335] The control unit 7 may also change the number of added frames in such a manner that the control unit 7 can appropriately detect the molten pool area MPA even if the processing conditions are changed. For example, the control unit 7 may change the number of added frames to the first number of frames in such a manner that when the processing system SYS processes the workpiece W based on the first processing condition, the control unit 7 can appropriately detect the molten pool area MPA when the processing system SYS is processing the workpiece W based on the first processing condition. For example, the control unit 7 may also change the number of added frames to the second number of frames in such a manner that when the processing system SYS processes the workpiece W based on the second processing condition, the control unit 7 can appropriately detect the molten pool area MPA when the processing system SYS is processing the workpiece W based on the second processing condition.

[0336] The control unit 7 may also change the number of added frames based on the processing conditions by using an added frame number table that specifies the correspondence between the processing conditions and the number of added frames. The added frame number table may be a table that specifies the number of added frames that the control unit 7 should use when the processing conditions of the workpiece W are a certain processing condition. The added frame number table may also be a table that records information related to the number of added frames that the control unit 7 should use by associating it with the processing conditions of the workpiece W. The added frame number table may be stored (in other words, recorded) in the storage device 72. The added frame number table may be generated in advance by repeatedly executing the molten pool feedback control action while changing at least one of the processing conditions and the number of added frames, and specifying the correspondence between the processing conditions and the number of added frames that can achieve a state in which the molding accuracy of the linear molded object molded by the molten pool feedback control action is the desired accuracy.

[0337] (2-6-2-1) First Specific Example of Processing Conditions

[0338] As described above, the processing conditions may include an intensity condition related to the intensity of at least one of the processing lights EL#1 and EL#2. The control unit 7 may change the number of added frames based on the intensity of at least one of the processing lights EL#1 and EL#2 irradiated to the workpiece W for processing the workpiece W.

[0339] Here, as a first specific example of the action of changing the number of added frames, an example of the action of changing the number of added frames when the intensity of the processing light EL#k is changed from a first intensity to a second intensity higher than the first intensity is described. In this case, since the intensity of the processing light EL#k increases, the brightness value (or arbitrary signal value) of the pixel in the molten pool image IMG in which the molten pool MP#k is captured also increases. In this case, the control unit 7 can change the number of added frames in a manner that reduces the number of added frames. That is, the control unit 7 can change the number of added frames in a manner that the higher the intensity of the processing light EL#k, the smaller the number of added frames. The control unit 7 can also change the number of added frames in a manner that the lower the intensity of the processing light EL#k, the larger the number of added frames.

[0340] In this case, the control unit 7 can appropriately detect the area to be detected as the melt pool area MPA as the melt pool area MPA. Specifically, Fig.21 (a) is a histogram of the brightness values ​​of the melt pool image IMG when the intensity of the processing light EL#k is the first intensity and the number of added frames is the first number of frames FN11. Fig.21 (b) represents a histogram of the brightness values ​​of the molten pool image IMG when the intensity of the processing light EL#k is the second intensity and the added frame number remains unchanged at the first frame number FN11. Fig.21(c) shows a histogram of the brightness value of the molten pool image IMG when the intensity of the processing light EL#k is the second intensity and the number of added frames is changed from the first number of frames FN11 to the second number of frames FN12 which is smaller than the first number of frames FN11. Fig.21 As shown in (b), if the number of added frames does not change when the intensity of the processing light EL#k is changed from the first intensity to the second intensity higher than the first intensity, the brightness value of the area that should not be detected as the melt pool area MPA may become higher than the signal threshold. Therefore, the control unit 7 may mistakenly detect the area that should not be detected as the melt pool area MPA as the melt pool area MPA. On the other hand, if the number of added frames is changed in a reduced manner when the intensity of the processing light EL#k is changed from the first intensity to the second intensity, the brightness value of each pixel of the added image IMG_C decreases. As a result, Fig.21 As shown in (c), the brightness value of the area that should not be detected as the melt pool area MPA becomes lower than the signal threshold. Therefore, the possibility that the control unit 7 mistakenly detects the area that should not be detected as the melt pool area MPA as the melt pool area MPA is reduced. As a result, the control unit 7 can appropriately detect the area that should be detected as the melt pool area MPA as the melt pool area MPA. That is, the control unit 7 can detect the melt pool area MPA with good accuracy.

[0341] Likewise, Fig. 22 (a) is a histogram of the brightness values ​​of the melt pool image IMG when the intensity of the processing light EL#k is the first intensity and the number of added frames is the first number of frames FN21. Fig. 22 (b) represents a histogram of the brightness values ​​of the molten pool image IMG when the intensity of the processing light EL#k is the second intensity and the added frame number remains unchanged at the first frame number FN21. Fig. 22 (c) shows a histogram of the brightness value of the molten pool image IMG when the intensity of the processing light EL#k is the second intensity and the number of added frames is changed from the first number of frames FN21 to the second number of frames FN22 which is smaller than the first number of frames FN21. Fig. 22 As shown in (a), the signal threshold is set to a value that can distinguish the melt pool area MPA from the non-melt pool area NPA in the melt pool image IMG when the intensity of the processing light EL#k is the first intensity. In this case, as described above, if the intensity of the processing light EL#k is changed from the first intensity to the second intensity, the brightness of the area to be detected as the non-melt pool area NPA may increase. As a result, Fig. 22As shown in (b), if the number of added frames does not change when the intensity of the processing light EL#k changes from the first intensity to the second intensity, the brightness value of the area that should be detected as the non-melt pool area NPA may become higher than the signal threshold. Therefore, the control unit 7 may mistakenly detect the area that should be detected as the non-melt pool area NPA as the melt pool area MPA. On the other hand, if the number of added frames is changed in a reduced manner when the intensity of the processing light EL#k changes from the first intensity to the second intensity, the brightness value of each pixel of the added image IMG_C decreases. As a result, Fig. 22 As shown in (c), the brightness value of the area to be detected as the non-melt pool area NPA becomes lower than the signal threshold. Therefore, the possibility that the control unit 7 mistakenly detects the area to be detected as the non-melt pool area NPA as the melt pool area MPA is reduced. As a result, the control unit 7 can appropriately detect the area to be detected as the melt pool area MPA as the melt pool area MPA. That is, the control unit 7 can detect the melt pool area MPA with good accuracy.

[0342] In addition, as described above, the processing conditions may also include conditions related to the density of the processing light EL#k. In this case, the action of changing the number of added frames based on the intensity of the processing light EL#k may be regarded as the action of changing the number of added frames based on the density of the processing light EL#k. The control unit 7 may change the number of added frames based on the density of the processing light EL#k in the same manner as the case of changing the number of added frames based on the intensity of the processing light EL#k. For example, the control unit 7 may change the number of added frames in such a manner that the higher the density of the processing light EL#k, the smaller the number of added frames. The control unit 7 may also change the number of added frames in such a manner that the lower the density of the processing light EL#k, the larger the number of added frames.

[0343] (2-6-2-2) Second Specific Example of Processing Conditions

[0344] As described above, the processing conditions may include a movement pattern condition related to the movement pattern of at least one of the target irradiation areas EA#1 and EA#2. The control unit 7 may also change the number of added frames based on the movement pattern of at least one of the target irradiation areas EA#1 and EA#2.

[0345] Here, as a second specific example of the action of changing the number of added frames, an example of the action of changing the number of added frames when the speed of movement of the target irradiation area EA#k is changed from a first speed to a second speed faster than the first speed is described. In this case, since the moving speed of the target irradiation area EA#k is accelerated, the energy transmitted from the processing light EL#k to the modeling surface MS per unit time is reduced. Therefore, the brightness value (or arbitrary signal value) of the pixel in which the molten pool MP#k is captured in the molten pool image IMG is reduced. In this case, the control unit 7 can change the number of added frames in a manner that increases the number of added frames. That is, the control unit 7 can change the number of added frames in a manner that the faster the speed of movement of the target irradiation area EA#k, the larger the number of added frames. The control unit 7 can also change the number of added frames in a manner that the slower the speed of movement of the target irradiation area EA#k, the smaller the number of added frames.

[0346] In this case, the control unit 7 can appropriately detect the area to be detected as the melt pool area MPA as the melt pool area MPA. Specifically, Fig.23 (a) represents a histogram of the brightness values ​​of the molten pool image IMG when the moving speed of the target irradiation area EA#k is the first speed and the added frame number is the first frame number FN31. Fig.23 (b) represents a histogram of the brightness values ​​of the molten pool image IMG when the moving speed of the target irradiation area EA#k is the second speed and the added frame number remains unchanged at the first frame number FN31. Fig.23 (c) represents a histogram of the brightness value of the molten pool image IMG when the speed of the target irradiation area EA#k is the second speed and the added frame number is changed from the first frame number FN31 to the second frame number FN32 which is larger than the first frame number FN31. Fig.23 As shown in (b), if the number of added frames does not change when the moving speed of the target irradiation area EA#k is changed from the first speed to the second speed that is faster than the first speed, the brightness value of the area that should be detected as the molten pool area MPA may become lower than the signal threshold. Therefore, the control unit 7 may not detect the area that should be detected as the molten pool area MPA as the molten pool area MPA. On the other hand, if the number of added frames is changed in an increasing manner when the moving speed of the target irradiation area EA#k is changed from the first speed to the second speed, the brightness value of each pixel of the added image IMG_C increases. As a result, as shown in FIG. Fig.23 As shown in (c), the brightness value of the area to be detected as the molten pool area MPA becomes higher than the signal threshold. Therefore, the control unit 7 can appropriately detect the area to be detected as the molten pool area MPA as the molten pool area MPA. That is, the control unit 7 can detect the molten pool area MPA with good accuracy.

[0347] Likewise, Fig.24(a) represents a histogram of the brightness values ​​of the molten pool image IMG when the moving speed of the target irradiation area EA#k is the first speed and the added frame number is the first frame number FN41. Fig.24 (b) represents a histogram of the brightness values ​​of the molten pool image IMG when the target irradiation area EA#k moves at the second speed and the added frame number remains unchanged at the first frame number FN41. Fig.24 (c) represents a histogram of the brightness values ​​of the molten pool image IMG when the speed of the target irradiation area EA#k is the second speed and the added frame number is changed from the first frame number FN41 to the second frame number FN42 which is larger than the first frame number FN41. Fig.24 As shown in (a), the signal threshold is set to a value that can distinguish the melt pool area MPA from the non-melt pool area NPA in the melt pool image IMG when the speed of the target irradiation area EA#k is the first speed. In this case, if the speed of the target irradiation area EA#k is changed from the first speed to the second speed, the brightness of the area to be detected as the melt pool area MPA decreases. As a result, if the number of added frames does not change when the speed of the target irradiation area EA#k is changed from the first speed to the second speed, then Fig.24 As shown in (b), the brightness value of the area to be detected as the melt pool area MPA may become lower than the signal threshold. Therefore, the control unit 7 may mistakenly detect the area to be detected as the melt pool area MPA as the non-melt pool area NPA. On the other hand, if the number of added frames is changed in an increasing manner when the moving speed of the target irradiation area EA#k is changed from the first speed to the second speed, the brightness value of each pixel of the added image IMG_C increases. As a result, Fig.24 As shown in (c), the brightness value of the area to be detected as the molten pool area MPA becomes higher than the signal threshold. Therefore, the control unit 7 can appropriately detect the area to be detected as the molten pool area MPA as the molten pool area MPA. That is, the control unit 7 can detect the molten pool area MPA with good accuracy.

[0348] In addition, as described above, if the period of movement of the target irradiation area EA#k changes, the speed of movement of the target irradiation area EA#k changes. The control unit 7 may also change the number of added frames in the same manner as when the speed of movement of the target irradiation area EA#k changes from the first speed to the second speed faster than the first speed, even if the period of movement of the target irradiation area EA#k changes from the first period to the second period shorter than the first period. That is, the control unit 7 may change the number of added frames in such a manner that the shorter the period of movement of the target irradiation area EA#k, the larger the number of added frames. The control unit 7 may also change the number of added frames in such a manner that the longer the period of movement of the target irradiation area EA#k, the smaller the number of added frames.

[0349] As described above, the processing system SYS can appropriately detect the molten pool area MPA by executing the addition frame number change action. The processing system SYS can appropriately (for example, with good accuracy) detect the molten pool area MPA using the control unit 7 even if the processing conditions are changed by executing the addition frame number change action. Therefore, the processing system SYS can appropriately perform the molten pool feedback control action using the molten pool area MPA detected by the control unit 7.

[0350] In addition, the control unit 7 may also change the number of added frames based on the exposure time of the camera unit 8. For example, if the exposure time is changed from the first time to the second time shorter than the first time, the brightness value (or arbitrary signal value) of the pixel in which the melt pool MP#k is captured in the melt pool image IMG is reduced. That is, if the exposure time is shortened, the brightness value (or arbitrary signal value) of the pixel in which the melt pool MP#k is captured in the melt pool image IMG is reduced, similarly to the case where the speed of movement of the target irradiation area EA#k is accelerated. Therefore, the control unit 7 may also change the number of added frames based on the exposure time, similarly to the case where the number of added frames is changed based on the speed of movement of the target irradiation area EA#k. That is, the control unit 7 may change the number of added frames in such a manner that the shorter the exposure time, the larger the number of added frames. The control unit 7 may also change the number of added frames in such a manner that the longer the exposure time, the smaller the number of added frames.

[0351] (2-7) Target size change action

[0352] (2-7-1) Overview of target size change operation

[0353] As mentioned above, the control unit 7 Fig. 9 In step S13, the processing system SYS is controlled in such a way that the size of the molten pool area MPA becomes the target size TS. In this case, the processing system SYS can perform a target size changing action simultaneously with or before and after the molten pool feedback control action under the control of the control unit 7. That is, the processing system SYS can perform a target size changing action during at least a portion of the execution of the molten pool feedback control action. The processing system SYS can perform a target size changing action before performing the molten pool feedback control action. The processing system SYS can also perform a target size changing action after performing the molten pool feedback control action. Typically, the control unit 7 can perform a target size changing action.

[0354] The target size changing operation is an operation of changing (in other words, controlling, adjusting or setting) the target size TS. That is, the target size changing operation is an operation of changing the target size TS used by the control unit 7 to control the machining system SYS.

[0355] In this case, the control unit 7 controls the processing system SYS so that the size of the molten pool area MPA becomes the target size TS changed by the control unit 7. Specifically, as shown in the timing diagram showing the relationship between the size of the molten pool area and the target size TS, Fig.25 As shown, before the target size TS is changed, the control unit 7 controls the processing system SYS so that the size of the molten pool area MPA becomes the target size TS before the change. After the target size TS is changed, the control unit 7 controls the processing system SYS so that the size of the molten pool area MPA becomes the target size TS after the change.

[0356] The control unit 7 can change the target size TS in such a way that the processing system SYS can shape a linear object with a desired size (typically a desired width) through the molten pool feedback control action. As a result, the processing system SYS can shape a linear object with a desired size (typically a desired width). That is, the processing system SYS can shape the object with higher shaping accuracy.

[0357] (2-7-2) Change of target size TS based on processing conditions

[0358] The control unit 7 can change the target size TS based on the processing conditions of the processing system SYS processing the workpiece W. For example, the control unit 7 can change the target size TS in such a way that the control unit 7 uses the first size as the target size TS when the processing system SYS processes the workpiece W based on the first processing condition. For example, the control unit 7 can also change the target size TS in such a way that the control unit 7 uses the second size different from the first size as the target size TS when the processing system SYS processes the workpiece W based on the second processing condition different from the first processing condition.

[0359] The control unit 7 may also change the target size TS in such a way that the processing system SYS can shape a linear object having a desired size (typically a desired width) even if the processing conditions are changed. For example, the control unit 7 may change the target size TS to a first size in such a way that when the processing system SYS processes the workpiece W based on the first processing condition, the processing system SYS can shape a linear object having a desired size corresponding to the first processing condition. For example, the control unit 7 may also change the target size TS to a second size in such a way that when the processing system SYS processes the workpiece W based on the second processing condition, the processing system SYS can shape a linear object having a desired size corresponding to the second processing condition.

[0360] The control unit 7 may change the target size TS in such a manner that the difference between the size (e.g., width) of the linear object formed when the machining system SYS processes the workpiece W based on the first machining condition and the size (e.g., width) of the linear object formed when the machining system SYS processes the workpiece W based on the second machining condition is suppressed to be less than a predetermined fourth allowable amount. Typically, the control unit 7 may change the target size TS in such a manner that the size (e.g., width) of the linear object formed when the machining system SYS processes the workpiece W based on the first machining condition and the size (e.g., width) of the linear object formed when the machining system SYS processes the workpiece W based on the second machining condition are the same. Alternatively, the control unit 7 may change the target size TS in such a manner that the difference between the size (e.g., width) of the linear object formed when the machining system SYS processes the workpiece W based on the first machining condition and the size (e.g., width) of the linear object formed when the machining system SYS processes the workpiece W based on the second machining condition becomes a predetermined target difference.

[0361] The control unit 7 may also change the target size TS based on the processing conditions by using a target size table that specifies the correspondence between the processing conditions and the target size TS. The target size table may be a table that specifies the target size TS that the control unit 7 should use when the processing conditions of the workpiece W are a certain processing condition. The target size table may also be a table that records information related to the target size TS that the control unit 7 should use by associating it with the processing conditions of the workpiece W. The target size table may be stored (in other words, recorded) in the storage device 72. The target size table may be pre-generated by repeatedly executing the molten pool feedback control action while changing at least one of the processing conditions and the target size TS, and specifying the correspondence between the processing conditions and the target size TS that can achieve a state in which the molding accuracy of the linear molded object molded by the molten pool feedback control action is the desired accuracy.

[0362] (2-7-2-1) First Specific Example of Processing Conditions

[0363] As described above, the processing conditions may include an intensity condition related to the intensity of at least one of the processing lights EL#1 and EL#2. The control unit 7 may change the target size TS based on the intensity of at least one of the processing lights EL#1 and EL#2 irradiated to the workpiece W for processing the workpiece W.

[0364] Here, as a first specific example of the action of changing the target size TS, an example of the action of changing the target size TS when the intensity of the processing light EL#k is changed from the first intensity to the second intensity higher than the first intensity is described. In this case, since the intensity of the processing light EL#k increases, the brightness value (or arbitrary signal value) of the pixel in which the melt pool MP#k is captured in the melt pool image IMG also increases. Furthermore, since the intensity of the processing light EL#k increases, the number of pixels having a signal value (for example, brightness value) greater than the signal threshold may increase even though the area where the melt pools MP#1 and MP#2 formed on the modeling surface MS move does not change. As a result, even though the area where the melt pools MP#1 and MP#2 formed on the modeling surface MS move does not change, the size of the melt pool area MPA calculated in the melt pool feedback control action may increase. That is, the size of the melt pool area MPA calculated when the intensity of the processing light EL is the second intensity may become larger than the size of the melt pool area MPA calculated when the intensity of the processing light EL is the first intensity.

[0365] In this situation, if the intensity of the processing light EL#k is changed from the first intensity to the second intensity without changing the target size TS, the size of the molten pool area MPA that matches the target size TS when the intensity of the processing light EL#k is the first intensity becomes larger than the target size TS. That is, although the size of the area where the molten pool MP#k actually moves on the modeling surface MS does not change with the change in the intensity of the processing light EL#k, the size of the molten pool area MPA calculated in the molten pool feedback control operation increases. Therefore, the control unit 7 controls the processing system SYS in such a way that the size of the molten pool area MPA decreases. As a result, the area where the molten pool MP#k actually moves on the modeling surface MS when the intensity of the processing light EL#k is the second intensity may become smaller than the area where the molten pool MP#k actually moves on the modeling surface MS when the intensity of the processing light EL#k is the first intensity. That is, the size of the processing unit area BSA#k for forming the molten pool MP#k when the intensity of the processing light EL#k is the second intensity may become smaller than the size of the processing unit area BSA#k for forming the molten pool MP#k when the intensity of the processing light EL#k is the first intensity. As a result, the size of the linear object formed when the intensity of the processing light EL#k is the second intensity may become smaller than the size of the linear object formed when the intensity of the processing light EL#k is the first intensity.

[0366] Therefore, the control unit 7 can change the target size TS so that the target size TS increases when the intensity of the processing light EL#k changes from the first intensity to the second intensity that is higher than the first intensity. That is, the control unit 7 can change the target size TS so that the target size TS increases as the intensity of the processing light EL#k increases. The control unit 7 can also change the target size TS so that the target size TS decreases as the intensity of the processing light EL#k decreases.

[0367] As a result, although the intensity of the processing light EL#k changes, the size of the processing unit area BSA#k for forming the molten pool MP#k does not change unexpectedly. Therefore, the size (typically the width) of the linear object formed by moving the processing unit areas BSA#1 and BSA#2 on the molding surface MS does not change unexpectedly. Therefore, even if the intensity of the processing light EL#k changes, the processing system SYS can mold a linear object with a desired size (typically the desired width). Therefore, the processing system SYS can mold the object with high molding accuracy.

[0368] In addition, as described above, the processing conditions may also include conditions related to the density of the processing light EL#k. In this case, the action of changing the target size TS based on the intensity of the processing light EL#k may be regarded as the action of changing the target size TS based on the density of the processing light EL#k. The control unit 7 may change the target size TS based on the density of the processing light EL#k in the same manner as the case of changing the target size TS based on the intensity of the processing light EL#k. For example, the control unit 7 may change the target size TS in such a manner that the higher the density of the processing light EL#k, the smaller the target size TS. The control unit 7 may also change the target size TS in such a manner that the lower the density of the processing light EL#k, the larger the target size TS.

[0369] (2-7-2-2) Second Specific Example of Processing Conditions

[0370] As described above, the processing conditions may include a movement pattern condition related to the movement pattern of at least one of the target irradiation areas EA#1 and EA#2. The control unit 7 may also change the target size TS based on the movement pattern of at least one of the target irradiation areas EA#1 and EA#2.

[0371] For example, the control unit 7 may change the target size TS in such a manner that the difference between the size (e.g., width) of the linear object formed when the target irradiation area EA#k moves in the first moving pattern and the size (e.g., width) of the linear object formed when the target irradiation area EA#k moves in the second moving pattern different from the first moving pattern is suppressed to below a predetermined fourth allowable amount. Typically, the control unit 7 may change the target size TS in such a manner that the size (e.g., width) of the linear object formed when the target irradiation area EA#k moves in the first moving pattern is the same as the size (e.g., width) of the linear object formed when the target irradiation area EA#k moves in the second moving pattern. Alternatively, the control unit 7 may also change the target size TS in such a manner that the difference between the size (e.g., width) of the linear object formed when the target irradiation area EA#k moves in the first moving pattern and the size (e.g., width) of the linear object formed when the target irradiation area EA#k moves in the second moving pattern becomes a predetermined target difference.

[0372] As an example, as described above, the movement pattern of the target irradiation area EA#k may also include the stroke of the target irradiation area EA#k. The larger the stroke of the target irradiation area EA#k, the larger the size (e.g., width) of the linear modeling object. In this case, the control unit 7 may change the target size TS in such a way that the larger the stroke, the larger the target size TS. The control unit 7 may also change the target size TS in such a way that the smaller the stroke, the smaller the target size TS. As a result, the processing system SYS is able to shape a linear modeling object having a size corresponding to the stroke.

[0373] As another example, as described above, the movement pattern of the target irradiation area EA#k may also include a pattern of the movement trajectory of the target irradiation area EA#k. In this case, the control unit 7 can obtain the target size TS corresponding to the pattern of the movement trajectory of the target irradiation area EA#k from the target size table. For example, in the case where the pattern of the movement trajectory of the target irradiation area EA#k is Figure 4 In the case of a wave-shaped (e.g., sinusoidal) pattern as shown in (b), the control unit 7 can obtain the target size TS corresponding to the wave-shaped (e.g., sinusoidal) moving trajectory pattern from the target size table. For example, the moving trajectory pattern of the target irradiation area EA#k is Figure 5 In the case of a spiral pattern (e.g., a circle whose center position is gradually shifted) as shown in (c), the control unit 7 can obtain a target size TS corresponding to the pattern of the spiral (e.g., a circle whose center position is gradually shifted) movement trajectory from the target size table. Thereafter, the control unit 7 can control the processing system SYS in such a way that the size of the molten pool area MPA becomes the obtained target size TS.

[0374] As described above, the processing system SYS can appropriately change the target size TS by executing the target size change action. In particular, the processing system SYS can appropriately shape a linear object with a desired size even if the processing conditions are changed by executing the target size change action. Therefore, the processing system SYS can shape the object with higher shaping accuracy.

[0375] (3) Variations

[0376] (3-1) First Variation

[0377] The control unit 7 can also obtain shape information about the melt pool MP#k continuously formed at different positions by the processing light EL#k based on the melt pool image IMG. The control unit 7 can also control the processing system SYS based on the shape information.

[0378] The shape information may be information indicating the shape of the molten pool area MPA. As described above, the molten pool area MPA corresponds to the area where the molten pool MP#k moves. In this case, the shape information may be information indicating the shape of the area where the molten pool MP#k moves. In other words, the shape information may be information indicating the shape of the moving trajectory of the molten pool MP#k.

[0379] The control unit 7 may also control the processing system SYS so that the shape of the molten pool area MPA becomes a desired shape. For example, when the shape of the molten pool area MPA is different from the desired shape, the control unit 7 may control the processing system SYS so that the shape of the molten pool area MPA is restored to the desired shape. As an example, the control unit 7 may control the intensity of at least one of the processing light EL#1 emitted by the light source 4#1 and the processing light EL#2 emitted by the light source 4#2 so that the shape of the molten pool area MPA is restored to the desired shape. That is, the control unit 7 may perform DC modulation control so that the shape of the molten pool area MPA is restored to the desired shape, that is, control the DC component of the intensity of at least one of the processing light EL#1 and EL#2.

[0380] As an example of a desired shape, a shape that is linearly symmetrical about an axis of symmetry along the moving direction of the processing unit area BSA#k can be cited. Fig.26 (a) shows an example in which the shape of the molten pool area MPA is not linearly symmetrical about the symmetry axis (for example, the symmetry axis along the X axis). Fig.26 The cross-sectional view of the linear object formed when the molten pool area MPA is shown in (a), that is, Fig. 27As shown in (a), the height of the left half of the linear object may be different from the height of the right half of the linear object. Fig.26 The cross-sectional view of the linear object formed when the molten pool area MPA is shown in (a), that is, Fig. 27 As shown in (b), the curvature of the corner of the left half of the linear object may be different from the curvature of the corner of the right half of the linear object. That is, the molding accuracy of the object may be deteriorated.

[0381] In this case, the control unit 7 can Fig.26 As shown in (b), the processing system SYS is controlled so that the shape of the molten pool area MPA is linearly symmetrical about the symmetry axis (for example, the symmetry axis along the X axis). As a result, as shown in FIG. Fig.26 The cross-sectional view of the linear object formed when the molten pool area MPA is shown in (b), that is, Fig. 27 As shown in (c), the height of the left half of the linear object is the same as the height of the right half of the linear object. Fig.26 The cross-sectional view of the linear object formed when the molten pool area MPA is shown in (b), that is, Fig. 27 As shown in (d), the curvature of the corner of the left half of the linear object is the same as the curvature of the corner of the right half of the linear object. That is, the molding accuracy of the object is improved.

[0382] (3-2) Second Variation

[0383] The control unit 7 can also obtain the center position information about the melt pool MP#k continuously formed at different positions by the processing light EL#k based on the melt pool image IMG. The control unit 7 can also control the processing system SYS based on the center information.

[0384] The center position information may be information indicating the center position of the molten pool area MPA. As described above, the molten pool area MPA corresponds to the area where the molten pool MP#k moves. In thi...

Claims

1. A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; a camera device capable of generating a molten pool image by photographing the molten pool; and a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information so that the size of the melt pool area becomes a target size; and The molten pool image information is generated based on a plurality of molten pool images captured by the imaging device. The control device changes the imaging condition for the imaging device to image the molten pool based on the processing condition of the object processed by the processing device.

2. The processing system according to claim 1, wherein The processing device includes an irradiation optical system for irradiating the energy beam, and a position changing device capable of changing the positional relationship between the object and the irradiation optical system, and The irradiation optical system includes a deflection optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

3. The processing system according to claim 2, wherein Based on the path information, the control device controls the position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

4. The processing system according to claim 2 or 3, wherein The plurality of melt pool images include an image showing a melt pool formed at a first position and an image showing a melt pool formed at a second position different from the first position by the deflecting optical system.

5. The processing system according to any one of claims 2 to 4, wherein The control device changes the imaging condition based on a control signal for controlling the deflection optical system.

6. The processing system according to any one of claims 2 to 5, wherein The control device performs at least one of the following actions: changing the shooting period for shooting the molten pool based on the speed of movement of the irradiation position; changing the shooting period for shooting the molten pool based on the period of the energy beam deflection; changing the shooting period for shooting the molten pool based on the speed of the energy beam deflection; changing the shooting rate for shooting the molten pool based on the speed of movement of the irradiation position; changing the shooting rate for shooting the molten pool based on the period of the energy beam deflection; and changing the shooting rate for shooting the molten pool based on the speed of the energy beam deflection.

7. A processing system according to any one of claims 2 to 6, wherein The control device performs at least one of the following actions: the faster the irradiation position moves, the shorter the shooting period for shooting the molten pool; the shorter the period of the energy beam deflection, the shorter the shooting period for shooting the molten pool; the faster the energy beam deflection speed, the shorter the shooting period for shooting the molten pool; the faster the irradiation position moves, the higher the shooting rate for shooting the molten pool; the shorter the period of the energy beam deflection, the higher the shooting rate for shooting the molten pool; and the faster the energy beam deflection speed, the higher the shooting rate for shooting the molten pool.

8. The processing system according to any one of claims 2 to 6, wherein The molten pool image information is generated by adding the plurality of molten pool images captured by the imaging device, and The control device performs at least one of the following actions: changing the number of the added molten pool images based on the speed of movement of the irradiation position; changing the number of the added molten pool images based on the period of the energy beam deflection; and changing the number of the added molten pool images based on the speed of the energy beam deflection.

9. The processing system according to any one of claims 2 to 8, wherein The molten pool image information is generated by adding the plurality of molten pool images captured by the imaging device, and The control device performs at least one of the following actions: the faster the irradiation position moves, the larger the number of the added molten pool images will be; the shorter the period of the energy beam deflection, the larger the number of the added molten pool images will be; and the faster the energy beam deflection speed, the larger the number of the added molten pool images will be.

10. The processing system according to any one of claims 1 to 9, wherein The imaging conditions include conditions related to a timing at which the imaging device images the molten pool.

11. The processing system according to any one of claims 1 to 10, wherein The imaging conditions include conditions related to an exposure time for the imaging device to image the molten pool.

12. The processing system according to any one of claims 1 to 11, wherein The photographing conditions include conditions related to a photographing cycle or a photographing rate at which the imaging device photographs the molten pool.

13. The processing system according to any one of claims 1 to 12, wherein The control device controls the imaging device so that the exposure time for imaging the molten pool is shortened as the intensity or density of the energy beam is higher.

14. The processing system according to claim 13, wherein The molten pool image information is generated by adding the plurality of molten pool images captured by the imaging device, and The control device increases the number of the melt pool images to be added as the exposure time is shorter.

15. A processing system according to any one of claims 2 to 9, wherein The energy beam is a first energy beam, The deflection optical system is a first deflection optical system, and The processing system further includes a second deflecting optical system capable of moving an irradiation position of a second energy beam on the surface of the object on the surface of the object by deflecting a second energy beam different from the first energy beam.

16. The processing system according to claim 15, wherein The processing conditions include at least one of a speed, a cycle, and a stroke of movement of an irradiation position of the first energy beam, and at least one of a speed, a cycle, and a stroke of movement of an irradiation position of the second energy beam.

17. A processing system according to any one of claims 1 to 16, wherein The processing conditions include beam conditions associated with the energy beam.

18. A processing system according to any one of claims 1 to 17, wherein The processing device includes an irradiation position moving device capable of moving an irradiation position of the energy beam on the object, and The processing conditions include a movement pattern condition related to a movement pattern of the irradiation position.

19. The processing system according to any one of claims 1 to 18, wherein The control device changes the shooting condition in the following manner: when the processing device processes the object based on a first processing condition, the camera device shoots the molten pool based on the first shooting condition; when the processing device processes the object based on a second processing condition different from the first processing condition, the camera device shoots the molten pool based on the second shooting condition different from the first shooting condition.

20. A processing system comprising: A processing device, comprising a processing head and a position changing device, wherein the processing head forms a molten pool on the object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool, and the position changing device is capable of changing the irradiation position of the energy beam relative to the processing head; an imaging device, provided on the processing head, capable of generating an image of the molten pool by photographing the molten pool formed by the processing device; and a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information so that the size of the melt pool area becomes a target size; and The melt pool image information is generated based on the plurality of melt pool images captured by the imaging device.

21. The processing system according to claim 20, wherein The position changing device is a first position changing device, and The processing device further comprises a second position changing device capable of changing the positional relationship between the object and the processing head. The first position changing device includes a deflecting optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

22. The processing system according to claim 21, wherein Based on the path information, the control device controls the second position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

23. A processing system according to claim 21 or 22, wherein The plurality of melt pool images include an image showing a melt pool formed at a first position and an image showing a melt pool formed at a second position different from the first position by the deflecting optical system.

24. A processing system according to any one of claims 21 to 23, wherein The control device performs at least one of the following actions: the faster the irradiation position moves, the shorter the shooting period for shooting the molten pool; the shorter the period of the energy beam deflection, the shorter the shooting period for shooting the molten pool; the faster the energy beam deflection speed, the shorter the shooting period for shooting the molten pool; the faster the irradiation position moves, the higher the shooting rate for shooting the molten pool; the shorter the period of the energy beam deflection, the higher the shooting rate for shooting the molten pool; and the faster the energy beam deflection speed, the higher the shooting rate for shooting the molten pool.

25. A processing system according to any one of claims 21 to 24, wherein The molten pool image information is generated by adding a plurality of the molten pool images captured by the imaging device, and The control device performs at least one of the following actions: the faster the irradiation position moves, the larger the number of the added molten pool images will be; the shorter the period of the energy beam deflection, the larger the number of the added molten pool images will be; and the faster the energy beam deflection speed, the larger the number of the added molten pool images will be.

26. A processing system according to any one of claims 20 to 25, wherein The control device changes the photographing conditions of the camera device for photographing the molten pool, and The imaging conditions include conditions related to a timing at which the imaging device images the molten pool.

27. A processing system according to any one of claims 20 to 26, wherein The control device changes the photographing conditions of the camera device for photographing the molten pool, and The imaging conditions include conditions related to an exposure time for the imaging device to image the molten pool.

28. A processing system according to any one of claims 20 to 27, wherein The control device changes the photographing conditions of the camera device for photographing the molten pool, and The photographing conditions include conditions related to a photographing cycle or a photographing rate at which the imaging device photographs the molten pool.

29. A processing system according to any one of claims 20 to 28, wherein The control device controls the imaging device so that the exposure time for imaging the molten pool is shortened as the intensity or density of the energy beam is higher.

30. The processing system of claim 29, wherein The molten pool image information is generated by adding the plurality of molten pool images captured by the imaging device, and The control device increases the number of the melt pool images to be added as the exposure time is shorter.

31. A processing system according to any one of claims 20 to 30, wherein The control device changes the photographing conditions used by the camera device to photograph the molten pool in the following manner: when the processing device processes the object based on a first processing condition, the camera device photographs the molten pool based on the first photographing condition; when the processing device processes the object based on a second processing condition different from the first processing condition, the camera device photographs the molten pool based on the second photographing condition different from the first photographing condition.

32. A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; a camera device capable of generating a molten pool image by photographing the molten pool; and a control device that calculates the size of a molten pool region in the molten pool image based on a comparison result of the signal value of the molten pool image with a predetermined threshold value, and controls the processing device in such a manner that the size of the molten pool region becomes a target size; and The control device changes the predetermined threshold value based on a processing condition under which the processing device processes the object.

33. The processing system of claim 32, wherein The processing device includes an irradiation optical system for irradiating the energy beam, and a position changing device capable of changing the positional relationship between the object and the irradiation optical system, and The irradiation optical system includes a deflection optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

34. The processing system of claim 33, wherein Based on the path information, the control device controls the position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

35. A processing system according to claim 33 or 34, wherein The imaging device generates a plurality of images of the molten pool. The control device calculates the size of the molten pool region in the molten pool image based on a comparison result of an addition result obtained by adding the plurality of molten pool images and a predetermined threshold value, and The plurality of melt pool images include an image showing a melt pool formed at a first position and an image showing a melt pool formed at a second position different from the first position by the deflecting optical system.

36. A processing system according to any one of claims 33 to 35, wherein The control device performs at least one of the following actions: the faster the irradiation position moves, the smaller the threshold; the shorter the period of the energy beam deflection is, the smaller the threshold; and the faster the speed of the energy beam deflection is, the smaller the threshold.

37. A processing system according to any one of claims 32 to 36, wherein The control device increases the threshold value as at least one of the intensity and density of the energy beam increases.

38. A processing system according to any one of claims 32 to 37, wherein The signal value is a value related to the brightness of the melt pool image.

39. A processing system according to any one of claims 32 to 38, wherein The size of the molten pool region is calculated based on the number of pixels whose signal values ​​are larger than the predetermined threshold value.

40. A processing system according to any one of claims 32 to 39, wherein The processing conditions include beam conditions associated with the energy beam.

41. A processing system according to any one of claims 33 to 36, wherein The processing conditions include a movement pattern condition related to a movement pattern of an irradiation position of the energy beam formed by the deflection optical system.

42. A processing system according to any one of claims 32 to 41, wherein The control device changes the predetermined threshold value in the following manner: when the processing device processes the object based on a first processing condition, the control device calculates the size of the molten pool area by comparing the signal value with the first threshold value serving as the predetermined threshold value; when the processing device processes the object based on a second processing condition different from the first processing condition, the control device calculates the size of the molten pool area by comparing the signal value with a second threshold value serving as the predetermined threshold value which is different from the first brightness threshold value.

43. A processing system according to any one of claims 32 to 42, wherein The imaging device continuously captures the molten pool a plurality of times to generate a plurality of images of the molten pool as time series data, and The control device adds the signal values ​​of a predetermined number of consecutive melt pool images among the plurality of melt pool images in units of pixels, and calculates the size of the melt pool region by comparing the addition result of the signal values ​​with the predetermined threshold value.

44. The processing system of claim 43, wherein The control device changes the predetermined number of sheets based on the processing conditions.

45. The processing system of claim 44, wherein The control device changes the predetermined number of images in the following manner: when the processing device processes the object based on a first processing condition, the control device adds the signal values ​​of the first number of molten pool images in units of pixels; when the processing device processes the object based on a second processing condition different from the first processing condition, the control device adds the signal values ​​of the second number of molten pool images different from the first number in units of pixels.

46. ​​A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; a camera device capable of generating a molten pool image by photographing the molten pool; and a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information so that the size of the melt pool area becomes a target size; and The control device changes the target size based on a processing condition under which the processing device processes the object.

47. The processing system of claim 46, wherein The processing device includes an irradiation optical system for irradiating the energy beam, and a position changing device capable of changing the positional relationship between the object and the irradiation optical system, and The irradiation optical system includes a deflection optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

48. The processing system of claim 47, wherein Based on the path information, the control device controls the position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

49. A processing system according to any one of claims 46 to 48, wherein The processing conditions include beam conditions associated with the energy beam.

50. The processing system of claim 49, wherein The control device is such that the higher the intensity or density of the energy beam, the larger the target size.

51. A processing system according to any one of claims 46 to 50, wherein The processing device includes an irradiation position moving device capable of moving an irradiation position of the energy beam on the object, and The processing conditions include a movement pattern condition related to a movement pattern of an irradiation position of the energy beam formed by the deflection optical system.

52. A processing system according to any one of claims 46 to 51, wherein The processing conditions include the travel of the irradiation position of the energy beam, and The control device makes the target size larger as the stroke becomes larger.

53. A processing system according to any one of claims 46 to 52, wherein The control device changes the target size in the following manner: when the processing device processes the object based on a first processing condition, the control device controls the processing device in such a manner that the size of the molten pool area becomes a first size serving as the target size; when the processing device processes the object based on a second processing condition different from the first processing condition, the control device controls the processing device in such a manner that the size of the molten pool area becomes a second size serving as the target size which is different from the first size.

54. A processing system according to any one of claims 46 to 53, wherein The control device changes the target size by controlling the processing device so that the size of the molten pool region becomes the target size, thereby molding a molded object of a desired size on the object.

55. A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; A camera device capable of generating a plurality of images by photographing a region including the molten pool multiple times; and The control device adds the signal values ​​of each pixel of the multiple images, and based on the comparison result of the addition result of each pixel with a predetermined threshold value, detects at least one of a molten pool area and a non-molten pool area in the image, wherein at least one of the luminous light and the reflected light outside the molten pool is captured in the non-molten pool area.

56. The processing system of claim 55, wherein At least one of the following is captured in the non-melt pool area: splashes generated by the scattering of the molten material melted in the molten pool; smoke generated by the evaporation of the molten material melted in the molten pool; light emission generated by the energy beam irradiating the surface film of the object; and the modeling material that has been melted by the energy beam before being supplied to the molten pool.

57. A processing system according to claim 55 or 56, wherein The processing device includes an irradiation optical system for irradiating the energy beam, and a position changing device capable of changing the positional relationship between the object and the irradiation optical system, and The irradiation optical system includes a deflection optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

58. The processing system of claim 57, wherein Based on the path information, the control device controls the position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

59. A processing system according to any one of claims 54 to 58, wherein The signal value is the brightness value of the image.

60. A processing system according to any one of claims 54 to 59, wherein The control device detects a region including pixels corresponding to an addition result of a signal value higher than the threshold as the melt pool region, and detects a region including pixels corresponding to an addition result of a brightness value lower than the brightness threshold as the non-melt pool region.

61. A processing system according to any one of claims 55 to 60, wherein The imaging device is capable of generating the plurality of images as time-series data.

62. A processing system according to any one of claims 55 to 61, wherein The imaging device generates the plurality of images by continuously imaging the molten pool.

63. A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; A camera device capable of multiple exposure of the area including the molten pool; and The control device detects at least one of a melt pool area and a non-melt pool area in an image generated by the multiple exposures by comparing the result of the multiple exposures performed by the camera device with a predetermined threshold value, wherein at least one of the luminous light and the reflected light outside the melt pool is captured in the non-melt pool area.

64. The processing system of claim 63, wherein At least one of the following is captured in the non-melt pool area: splashes generated by the scattering of the molten material melted in the molten pool; smoke generated by the evaporation of the molten material melted in the molten pool; light emission generated by the energy beam irradiating the surface film of the object; and the modeling material that has been melted by the energy beam before being supplied to the molten pool.

65. A processing system according to claim 63 or 64, wherein The processing device includes an irradiation optical system for irradiating the energy beam, and a position changing device capable of changing the positional relationship between the object and the irradiation optical system, and The irradiation optical system includes a deflection optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

66. The processing system of claim 65, wherein Based on the path information, the control device controls the position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

67. A processing system according to any one of claims 63 to 66, wherein The result of the multiple exposures includes brightness values ​​of the image.

68. A processing system according to any one of claims 63 to 67, wherein The control device detects a region including pixels corresponding to a result of multiple exposure higher than the threshold as the melt pool region, and detects a region including pixels corresponding to a result of multiple exposure lower than the threshold as the non-melt pool region.

69. A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; A camera device capable of generating a molten pool image by photographing the molten pool; a control device that generates melt pool image information based on the melt pool image generated by the imaging device, and controls the processing device based on the melt pool image information so that the size of the melt pool area becomes a target size; and a recording device that records information related to a target size of the molten pool in association with a jitter condition of the energy beam; and The control device controls the processing device based on the target size of the molten pool obtained from the recording device.

70. The processing system of claim 69, wherein The processing device includes an irradiation optical system for irradiating the energy beam, and a position changing device capable of changing the positional relationship between the object and the irradiation optical system, and The irradiation optical system includes a deflection optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

71. The processing system of claim 70, wherein Based on the path information, the control device controls the position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

72. A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; a camera device capable of generating a molten pool image by photographing the molten pool; and control devices; and The control device can obtain shape information about molten pools continuously formed at different positions by the energy beam based on the molten pool image generated by the imaging device, and control the processing device based on the shape information.

73. The processing system of claim 72, wherein The processing device includes an irradiation optical system for irradiating the energy beam, and a position changing device capable of changing the positional relationship between the object and the irradiation optical system, and The irradiation optical system includes a deflection optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

74. The processing system of claim 73, wherein Based on the path information, the control device controls the position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

75. A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; a camera device capable of generating a molten pool image by photographing the molten pool; and control devices; and The control device can obtain center position information of molten pools continuously formed at different positions by the energy beam based on the molten pool image generated by the imaging device, and control the processing device based on the center position information.

76. The processing system of claim 75, wherein The processing device includes an irradiation optical system for irradiating the energy beam, and a position changing device capable of changing the positional relationship between the object and the irradiation optical system, and The irradiation optical system includes a deflection optical system capable of moving an irradiation position of the energy beam on the surface of the object on the surface of the object by deflecting the energy beam.

77. The processing system of claim 76, wherein Based on the path information, the control device controls the position changing device in a manner so as to form a shape on the object along a target trajectory, and controls the deflection optical system in a manner so as to periodically move the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory.

78. The processing system of claim 3, 22, 34, 48, 58, 64, 70, 73 or 76, wherein The path information includes line width information, and The control device controls the deflection optical system so that the irradiation position of the energy beam is periodically moved inside the width of the line formed based on the line width information.

79. The processing system of any one of claims 2 to 4, 21 to 23, 33 to 35, 47 to 48, 57 to 58, 65 to 66, 70 to 71, 73 to 74, and 76 to 78, wherein The control device controls the deflection optical system so that the deflection optical system periodically moves the irradiation position of the energy beam inside a target width indicating a width of the object in a direction intersecting the target trajectory.

80. The processing system of claim 78, wherein The imaging device can image the molten pool so that the molten pool formed by the energy beam periodically moving inside the width of the line is within an imaging range.

81. The processing system of claim 79, wherein The imaging device can image the molten pool so that the molten pool formed by the energy beam periodically moving inside the target width is within an imaging range.

82. The processing system of any one of claims 1 to 31, 46 to 54, and 69 to 71, wherein The melt pool image information is generated based on a plurality of the melt pool images, where the plurality of the melt pool images are obtained by capturing melt pools formed at different positions within a capturing range of the imaging device.

83. The processing system of any one of claims 21 to 23, 33 to 35, 47 to 48, 57 to 58, 65 to 66, 70 to 71, 73 to 74, and 76 to 81, wherein The control device controls the deflection optical system to perform a shaking action to periodically move the energy beam.

84. The processing system of any one of claims 21 to 23, 33 to 35, 47 to 48, 57 to 58, 65 to 66, 70 to 71, 73 to 74, 76 to 81, and 83, wherein The deflection optical system includes a galvanometer mirror.

85. The processing system of any one of claims 1 to 31, 45 to 54, 69 to 71, and 82, wherein The melt pool image information includes information on the number of pixels of an image representing the melt pool.

86. A processing system according to any one of claims 1 to 31, and 43, wherein The plurality of melt pool images are images obtained by photographing a plurality of melt pools having different positions.

87. A processing system according to any one of claims 55 to 62, wherein The plurality of images are images obtained by photographing a plurality of melt pools having different positions.

88. A processing system according to any one of claims 1 to 87, wherein The molten pool is movable within a plane intersecting the irradiation direction of the energy beam.

89. A processing system according to any one of claims 1 to 88, wherein The molten pool can reciprocate on an axis intersecting the irradiation direction of the energy beam.

90. The processing system according to any one of claims 1 to 19 and 32 to 54, wherein The processing conditions are conditions related to movement of the irradiation position of the energy beam.

91. The processing system of any one of claims 1 to 19, 32 to 54, and 90, wherein The processing conditions include at least one of a speed, a cycle, and a stroke of movement of the irradiation position of the energy beam.

92. A processing system comprising: a processing device for forming a molten pool on an object by irradiating an energy beam to the object, and processing the object by supplying a molding material to the molten pool; a camera device capable of generating a molten pool image by photographing the molten pool; and a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information so that the size of the melt pool area becomes a target size; and The melt pool image information is generated based on the melt pool image, and the melt pool image is generated by multiple exposures performed by the camera device. The control device changes the conditions of the multiple exposures performed by the imaging device based on the processing conditions of the object processed by the processing device.

93. A processing system comprising: A processing device, comprising a processing head and a position changing device, wherein the processing head forms a molten pool on the object by irradiating an energy beam to the object, and processes the object by supplying a molding material to the molten pool, and the position changing device is capable of changing the irradiation position of the energy beam relative to the processing head; an imaging device, provided on the processing head, capable of generating an image of the molten pool by photographing the molten pool formed by the processing device; and a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information so that the size of the melt pool area becomes a target size; and The melt pool image information is generated based on multiple exposures performed by the imaging device.

94. A processing system comprising: A processing device irradiates an energy beam to an object to form a molten pool on the object; a camera device capable of generating a molten pool image by photographing the molten pool; and a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information; and The molten pool image information is generated based on a plurality of molten pool images captured by the imaging device. The control device changes the imaging condition for the imaging device to image the molten pool based on the processing condition of the object processed by the processing device.

95. A processing system comprising: A processing device, comprising a processing head and a position changing device, wherein the processing head irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object, and the position changing device is capable of changing the irradiation position of the energy beam relative to the processing head; an imaging device, provided on the processing head, capable of generating an image of the molten pool by photographing the molten pool formed by the processing device; and The control device generates melt pool image information based on the melt pool image generated by the imaging device, and controls the processing device based on the melt pool image information.

96. A processing system comprising: A processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; a camera device capable of generating a molten pool image by photographing the molten pool; and A control device controls the processing device based on a comparison result of the signal value of the molten pool image and a predetermined threshold value; and The control device changes the predetermined threshold value based on a processing condition under which the processing device processes the object.

97. A processing system comprising: A processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; a camera device capable of generating a molten pool image by photographing the molten pool; and a control device that generates melt pool image information based on the melt pool image generated by the imaging device, and controls the processing device based on the melt pool image information so that the size of the melt pool area becomes a target size; The control device changes the target size based on a processing condition under which the processing device processes the object.

98. A processing system comprising: A processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; A camera device capable of generating a plurality of images by photographing a region including the molten pool multiple times; and The control device detects at least one of a melt pool area and a non-melt pool area in the image based on the addition result of the signal value of each pixel of the plurality of images, wherein the non-melt pool area includes at least one of luminous light and reflected light outside the melt pool.

99. A processing system comprising: A processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; A camera device capable of multiple exposure of the area including the molten pool; and The control device detects at least one of a melt pool area and a non-melt pool area in an image generated by the multiple exposures based on a comparison result of the multiple exposures performed by the camera device with a predetermined threshold value, wherein at least one of luminous light and reflected light outside the melt pool is captured in the non-melt pool area.

100. A processing system comprising: A processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; A camera device capable of generating a molten pool image by photographing the molten pool; a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information; and a recording device that records information related to a target size of the molten pool in association with a jitter condition of the energy beam; and The control device controls the processing device based on the target size of the molten pool obtained from the recording device.

101. A processing system comprising: A processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; a camera device capable of generating a molten pool image by photographing the molten pool; and control devices; and The control device can obtain shape information about molten pools continuously formed at different positions by the energy beam based on the molten pool image generated by the imaging device, and control the processing device based on the shape information.

102. A processing system comprising: A processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; a camera device capable of generating a molten pool image by photographing the molten pool; and control devices; and The control device can obtain center position information of molten pools continuously formed at different positions by the energy beam based on the molten pool image generated by the imaging device, and control the processing device based on the center position information.

103. A processing system comprising: A processing device for irradiating an object with an energy beam to form a molten pool on the object, thereby processing the object; a camera device capable of generating a molten pool image by photographing the molten pool; and a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information; and The melt pool image information is generated based on the melt pool image, and the melt pool image is generated by multiple exposures performed by the camera device. The control device changes the conditions of the multiple exposures performed by the imaging device based on the processing conditions of the object processed by the processing device.

104. A processing system comprising: A processing device, comprising a processing head and a position changing device, wherein the processing head irradiates an energy beam to an object to form a molten pool on the object, thereby processing the object, and the position changing device is capable of changing the irradiation position of the energy beam relative to the processing head; an imaging device, provided on the processing head, capable of generating an image of the molten pool by photographing the molten pool formed by the processing device; and a control device that generates melt pool image information based on the melt pool image generated by the camera device, and controls the processing device based on the melt pool image information; and The melt pool image information is generated based on multiple exposures performed by the imaging device.

105. A processing system comprising: A processing device, which forms a molten pool on the object by irradiating an energy beam to the object, and forms a modeling object on the object along a target trajectory; A camera device capable of generating a molten pool image by photographing the molten pool; and a control device for controlling the processing device based on the molten pool image generated by the imaging device; and Forming a shape on the object along the target trajectory includes moving the irradiation position of the energy beam on the surface of the object along a scanning direction intersecting the target trajectory, The control device controls the processing device based on the plurality of molten pool images captured by the imaging device.

106. The processing system of claim 105, wherein The movement of the irradiation position along the scanning direction includes periodic movement.

107. The processing system of claim 105 or 106, wherein Forming a pattern on the object along the target trajectory includes periodically moving an irradiation position of the energy beam on the surface of the object in a direction along the target trajectory.

108. A processing system comprising: A processing device for forming a molten pool on an object by irradiating an energy beam to the object; and A camera device capable of generating a molten pool image by photographing the molten pool; and The imaging device can capture an image of a molten pool appearing at a first position at a first time, and a molten pool appearing at a second position different from the first position at a second time different from the first time.

Citation Information

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