A single crystal wire preparation device, method and application thereof

Abstract

The present application discloses a single crystal wire preparation device, method and application thereof, the preparation device includes a machine tool body, a lifting device arranged on the upper part of the machine tool body, a wire transport mechanism and a lifting drive mechanism that perform reciprocating linear motion on the machine tool body, the wire transport mechanism includes a first cutting wheel group, a second cutting wheel group located below the first cutting wheel group, and a direction-changing roller arranged at the intersection of the first cutting wheel group and the second cutting wheel group; the first cutting wheel group is wound with multiple cutting wires along a first wire feed direction, and the second cutting wheel group is wound with multiple cutting wires along a second wire feed direction, the direction-changing roller is respectively connected to the first cutting wheel group and the second cutting wheel group through the cutting wires, and the angle between the first wire feed direction and the second wire feed direction is 1‑90°. The present application uses the direction-changing roller and the second cutting wheel group to enable the second cutting wheel group to change the wire feed direction, and to feed and cut simultaneously with the first cutting wheel group to prepare single crystal wire, thereby improving the preparation efficiency and quality of metal single crystal wire.

Description

Technical Field

[0001] The present application belongs to the technical field of crystal material processing, and specifically relates to a single crystal wire preparation device, method and application thereof. Background Art

[0002] Continuous breakthroughs in semiconductor technology, integrated circuit technology, and the quality of electronic components, coupled with the rapid advancements in related industries such as electronics, communications, aerospace, and medical, are driving the need for miniaturization and precision in components. This, in turn, places higher demands on the quality of the metal materials used in these fields. One trend is the development of finer, thinner, and advanced materials that require excellent processability, strength, toughness, and flexibility, while also exhibiting superior electrical conductivity, low line resistance loss, and strong signal fidelity. Therefore, in order to improve the material quality of single-crystal metal wire, it is necessary to further optimize the preparation process for single-crystal metal wire.

[0003] The existing technology for producing single-crystal metal wire primarily utilizes continuous casting to grow single crystals or columnar crystal ingots, which are then drawn into long, strip-shaped wires. However, the drawing process can easily cause grain slip, twinning, and kinking within the wire, impacting its quality and taking a long time.

[0004] Semiconductor single crystal wires are mainly prepared by cutting, where the single crystal ingot to be processed is ground by a high-speed cutting wire, thereby achieving the purpose of cutting. For example, Chinese patent application number CN201710704064.3 discloses a crystalline silicon multi-wire saw and a crystalline silicon cutting method. However, the crystalline silicon wire cutting equipment in this patent requires a swing mechanism to drive the workpiece carrier to swing, changing the placement angle of the crystalline silicon carried by the cutting workpiece carrier device to perform cutting. The operation is relatively cumbersome and cannot effectively improve the preparation efficiency of semiconductor single crystal wires. Summary of the Invention

[0005] The technical problem to be solved by this application is to provide a single crystal wire preparation device, method and application thereof, so as to improve the quality and preparation efficiency of metal single crystal wire and better meet the requirements of related industries for metal single crystal wire.

[0006] In order to solve the above-mentioned problems of the present application, the present application provides a single crystal wire preparation device, including a machine tool body, a lifting device arranged on the upper part of the machine tool body, a wire transport mechanism and a lifting drive mechanism that perform reciprocating linear motion on the machine tool body, the wire transport mechanism including a first cutting wheel group, a second cutting wheel group located below the first cutting wheel group, and a changing roller arranged at the intersection of the first cutting wheel group and the second cutting wheel group; the first cutting wheel group is wound with multiple cutting wires along the first wire feed direction, and the second cutting wheel group is wound with multiple cutting wires along the second wire feed direction, the changing roller is respectively connected to the first cutting wheel group and the second cutting wheel group through the cutting wires, and the angle between the first wire feed direction and the second wire feed direction is 1-90°.

[0007] This application provides a single-crystal wire preparation device that utilizes a wire feed mechanism and a lift drive mechanism on a machine tool body, with precisely controlled cutting wheels and direction-changing rollers to achieve efficient and continuous single-crystal wire cutting. By adjusting the angle between the first and second feed directions of the cutting wire, flexible selection of different cutting angles and paths is achieved, thereby meeting the processing requirements of different single-crystal wire products and enhancing the flexibility and adaptability of the preparation process.

[0008] As an improvement of the above-mentioned single crystal wire preparation device in the present application, the first cutting wheel group includes: a first wire-reeling wheel and two first wire roller wheels arranged opposite to each other along the first wire feed direction.

[0009] As an improvement of the above-mentioned single crystal wire preparation device of the present application, the second cutting wheel group includes: a second wire-retracting wheel and two second wire roller wheels arranged opposite to each other along the second wire feeding direction.

[0010] As an improvement of the present application to the above-mentioned single crystal wire preparation device, the cutting wire uses diamond as an abrasive.

[0011] Furthermore, the cutting wire is made of either diamond steel wire or diamond tungsten wire.

[0012] In order to solve the above-mentioned problems of the present application, the present application also provides a method for preparing a single crystal wire, comprising: fixing the single crystal ingot to be cut on a lifting device and lifting it to a preset position; adjusting the parameters of the cutting line according to the preset cutting size; the parameters include the spacing between each of the cutting lines and the angle between the second feed direction and the first feed direction; driving the wire transport mechanism to make a linear upward movement toward the single crystal ingot, and the cutting line in the wire transport mechanism simultaneously feeds upward along the first feed direction and the second feed direction to cut the single crystal ingot to obtain a single crystal wire.

[0013] This application provides a method for preparing single-crystal wire rods, which uses cutting techniques that simultaneously advance along two directions, effectively shortening cutting time and improving production efficiency. By precisely adjusting the spacing between each cutting line and the angle between the second and first cutting directions, this method enables high-precision cutting of single-crystal ingots.

[0014] As an improvement of the present application to the above-mentioned method for preparing single crystal wire, the spacing between the cutting lines is 30μm-30cm; and the angle between the second line feed direction and the first line feed direction is 1-90°.

[0015] As an improvement of the present application to the above-mentioned method for preparing single crystal wire, the feed speed of the cutting wire is 0.01-5 mm / min.

[0016] In order to solve the above-mentioned problems of the present application, the present application also provides a single crystal wire preparation device and method and their application in preparing metal single crystal wire.

[0017] Furthermore, the material of the metal single crystal wire includes any one of iron, copper, aluminum, titanium, iron alloy, copper alloy, titanium alloy and aluminum alloy.

[0018] The beneficial effects of this application are:

[0019] The single crystal wire preparation device provided in this application utilizes a first cutting wheel assembly and a second cutting wheel assembly, each of which can be moved vertically, to be sequentially installed below a lifting device. A reversing roller is used to adjust the cutting line of the second cutting wheel assembly to rotate horizontally, thereby forming a two-layer multi-wire cutting process. During the preparation process, the two layers of cutting lines simultaneously advance upward, cutting the metal single crystal ingot into metal single crystal wires of the same size. During the cutting process, the metal single crystal wire is not subjected to a pulling force, and therefore, the grains within the metal single crystal wire do not slip, twin, or kink due to plastic deformation, effectively improving the preparation efficiency and quality of the metal single crystal wire. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 Schematic diagram of the structure of a single crystal wire preparation device in an embodiment of the present application;

[0021] Figure 2 Schematic diagram of the structure of the wire transport mechanism in the embodiment of the present application;

[0022] Figure 3 is a top view of the cutting line distribution in the embodiment of the present application;

[0023] Figure 4 It is a schematic flow chart of a method for preparing a single crystal wire in an embodiment of the present application.

[0024] Description of reference numerals:

[0025] 1. Machine tool body; 2. Lifting device; 3. Wire transport mechanism; 31. First cutting wheel group; 311. First pay-off and take-up wheel; 312. First wire roller; 32. Second cutting wheel group; 321. Second pay-off and take-up wheel; 322. Second wire roller; 33. Direction-changing roller. DETAILED DESCRIPTION

[0026] The following embodiments of the technical solution of the present application are described in detail. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

[0027] Example 1

[0028] Figure 1 FIG. 1 shows a schematic structural diagram of a single crystal wire preparation device according to an embodiment of the present application. Figure 1 As shown, the present application provides a single crystal wire preparation device, comprising: a machine tool body 1, a lifting device 2 arranged on the upper part of the machine tool body 1, a wire transport mechanism 3 and a lifting drive mechanism that performs reciprocating linear motion on the machine tool body 1, the wire transport mechanism 3 comprising a first cutting wheel group 31, a second cutting wheel group 32 located below the first cutting wheel group 31, and a changing roller 33 arranged at the intersection of the first cutting wheel group 31 and the second cutting wheel group 32;

[0029] The first cutting wheel group 31 is wound with multiple cutting lines along the first feeding direction, and the second cutting wheel group 32 is wound with multiple cutting lines along the second feeding direction. The direction-changing roller 33 is respectively connected to the first cutting wheel group 31 and the second cutting wheel group 32 through the cutting lines. The angle between the first feeding direction and the second feeding direction is 1-90°.

[0030] Specifically, the hoisting device 2 is driven by a motor and is used to lift the single crystal ingot to be cut to an appropriate position for subsequent cutting operations. The single crystal ingot can be fixed to the hoisting device 2 at one end using glue or a clamp to ensure that the single crystal ingot is parallel to the wire transport mechanism 3. The lifting drive mechanism is used to control the reciprocating motion of the wire transport mechanism 3 in the vertical direction to achieve cutting of the single crystal ingot on the hoisting device 2. The lifting drive mechanism is also used to adjust the feed speed of the cutting wire in the wire transport mechanism 3.

[0031] The wire feeding mechanism 3 includes a first cutting wheel group 31 and a second cutting wheel group 32 arranged horizontally from top to bottom, wherein each cutting wheel group is provided with multiple cutting wires in parallel in the horizontal direction. During the upward feeding process of the wire feeding mechanism 3, the cutting wires on the first cutting wheel group 31 and the second cutting wheel group 32 move to form a wire saw, and the two layers of cutting wires feed upward at the same time, grinding the single crystal ingot and cutting it into a number of single crystal wires of the same size. During the cutting process, the single crystal wire is not easily subjected to the pulling effect, so the grains inside it will not cause slippage, twinning or kinking due to plastic deformation. In addition, in this embodiment, the first cutting wheel group 31 and the second cutting wheel group 32 are connected to the turning roller 33 at the intersection through the cutting wire. By adjusting the position and angle of the turning roller 33, the angle of the cutting wire in the second cutting wheel group 32 can be rotated horizontally by 1-90° relative to the first cutting wheel group 31, thereby achieving precise cutting of the single crystal wire. Compared with the wire cutting equipment in the prior art, which needs to change the angle of the tray carrying the single crystal ingot to be cut and perform cutting in multiple times, the preparation device of this embodiment does not need to change the direction or angle of the single crystal ingot. By flexibly adjusting the movement direction of the cutting wire, the preparation of single crystal wire can be achieved in one cutting process. It is easy to operate and realizes efficient and precise preparation of single crystal wire.

[0032] It should be understood that friction during the cutting process generates a significant amount of heat, potentially causing deformation of the single crystal wire. To address this technical issue, the single crystal wire production apparatus further includes a heat dissipation mechanism that sprays cutting fluid onto the surface of the cutting wire via a flexible, position- and angle-adjustable liquid outlet pipe, reducing cutting force and heat. Optionally, the heat dissipation mechanism is connected to the lifting drive mechanism and moves with the wire transport mechanism 3.

[0033] In order to reduce the material loss rate, the cutting gap of the single crystal ingot should be reduced as much as possible. Optionally, the diameter of the cutting line is 0.1-0.4 mm.

[0034] Figure 2 Schematic diagram of the structure of the wire transport mechanism in the embodiment of the present application. Figure 3 FIG is a top view of the cutting line distribution in the embodiment of the present application. Figures 2-3 As shown, in one implementation, the first cutting wheel assembly 31 includes: a first pay-off and take-up wheel 311 and two first wire roller wheels 312 arranged opposite to each other along the first wire feeding direction.

[0035] Specifically, the first pay-off and retractor wheel 311 is located at the starting end of the wire feeding mechanism 3, and is used to adjust the pay-off or tightening of the cutting line according to the cutting requirements, ensuring that the cutting line maintains appropriate tension and position during the cutting process. The two first wire rollers 312 are arranged relative to each other along the first feed direction of the single crystal wire to form a pair of clamping points for stabilizing the transmission path of the cutting line. Optionally, the first pay-off and retractor wheel 311 and the second pay-off and retractor wheel 321 can be driven by a motor. This embodiment can achieve efficient and precise cutting of single crystal wires by precisely controlling the rotation speed of the first pay-off and retractor wheel 311 and the clamping force of the first wire roller 312.

[0036] In one implementation, the second cutting wheel assembly 32 includes: a second pay-off and take-up wheel 321 and two second wire roller wheels 322 arranged opposite to each other along the second wire feeding direction.

[0037] The specific implementation of this embodiment can refer to the implementation and effect of the first cutting wheel assembly 31 in the previous embodiment, and will not be repeated here.

[0038] In one implementation, the cutting wire uses diamond as an abrasive.

[0039] Specifically, diamond has high hardness and wear resistance. Uniformly bonding diamond abrasives to the surface of the cutting wire substrate can improve the cutting force and service life of the cutting wire, reduce the frequency of wire replacement, and improve the efficiency of single crystal wire production. Preferably, the cutting wire is made of either diamond steel wire or diamond tungsten wire.

[0040] The single crystal wire preparation apparatus provided in the embodiment of the present application sequentially installs a first cutting wheel assembly 31 and a second cutting wheel assembly 32 that can move vertically below a lifting device 2, and adjusts the cutting line of the second cutting wheel assembly 32 to rotate horizontally using a changing roller 33, thereby forming a two-layer multi-wire cutting process. During the preparation process, the two layers of cutting lines simultaneously feed upward to cut the metal single crystal ingot into metal single crystal wires of the same size. During the cutting process, the metal single crystal wire is not subjected to a pulling effect, so the grains within the metal single crystal wire do not slip, twin, or kink due to plastic deformation, effectively improving the preparation efficiency and quality of the metal single crystal wire.

[0041] Example 2

[0042] Figure 4 FIG1 shows a flow chart of a method for preparing a single crystal wire according to an embodiment of the present application. Figure 4 As shown, the present application provides a method for preparing a single crystal wire, comprising:

[0043] S1: Fix the single crystal ingot to be cut on the lifting device and lift it to the preset position;

[0044] Optionally, the length and width of the single crystal ingot to be cut are 5 cm to 50 cm, or the diameter is 5 cm to 50 cm and the height is 5 cm to 500 cm. Preferably, the length and width of the single crystal ingot to be cut are 10 cm to 30 cm, or the diameter is 10 cm to 30 cm and the height is 200 cm to 400 cm.

[0045] S2: Adjust the parameters of the cutting line according to the preset cutting size;

[0046] Specifically, the parameters include the spacing between each cutting line and the angle between the second feed direction and the first feed direction. Optionally, the spacing between each cutting line is 30 μm-30 cm; the angle between the second feed direction and the first feed direction is 1-90°. Preferably, the spacing between each cutting line is 1 mm-10 mm; and the angle between the second feed direction and the first feed direction is 60-90°.

[0047] S3: driving the wire transport mechanism to perform a linear upward movement toward the single crystal ingot, and allowing the cutting wire in the wire transport mechanism to simultaneously advance upward along the first wire feed direction and the second wire feed direction to cut the single crystal ingot to obtain a single crystal wire.

[0048] Specifically, the feed speed of the cutting wire is affected by various factors, such as the physical properties of the ingot, the cutting requirements, and the material of the cutting wire. To ensure the smoothness of the cutting process and the quality of the single crystal wire, the feed speed of the cutting wire is optionally 0.01-5 mm / min. Preferably, the feed speed is 0.5-2 mm / min.

[0049] After step S3, the single crystal wire preparation method further includes removing the cut single crystal wire from the lifting device in the cutting area and cleaning it to remove impurities such as cutting chips and oil stains on the surface of the single crystal wire. Testing and processing are then performed to confirm that the single crystal wire meets design requirements.

[0050] The method for preparing a single crystal wire provided in an embodiment of the present application increases the flexibility of the cutting process by precisely controlling the layout of the cutting lines, including the spacing and angle of the line feed direction. Controlling the cutting lines to simultaneously feed upward along the first and second line feed directions to cut the single crystal ingot helps reduce vibration and deformation during the cutting process, thereby reducing the probability of plastic deformation of the single crystal wire. In addition, the use of diamond abrasives also helps to improve the smoothness of the cut surface and reduce cutting damage, thereby ensuring the quality of the single crystal wire.

[0051] Example 3

[0052] The present application also provides a single crystal wire preparation device and method for use in preparing metal single crystal wires. The metal single crystal wires are made of any one of iron, copper, aluminum, titanium, iron alloys, copper alloys, titanium alloys, and aluminum alloys.

[0053] Optionally, the metal single crystal ingot used to prepare the above-mentioned metal single crystal wire can be prepared by at least one of the following methods: Czochralski method, crucible descent method, cold crucible method, kyropoulos method, zone melting method or casting method. Preferably, the metal single crystal ingot to be cut is prepared by Czochralski method.

[0054] In order to verify the effectiveness of the single crystal wire preparation apparatus and method described in Examples 1 and 2 above in the preparation of metal single crystal wires, some specific experiments have been conducted on this application according to the embodiments provided herein. Specifically, by controlling variables such as the type of metal single crystal ingot, preparation method, and cutting parameters, different examples of metal single crystal wires were prepared. As can be seen from these examples, the solutions provided by this application have achieved good results. It should be noted that the following examples are only used to illustrate the present invention in detail and do not limit the scope of protection of the invention in any way.

[0055] Example 4

[0056] S1: Fix the single crystal copper ingot to be cut on the lifting device and lift it to the preset position;

[0057] S2: Adjust the parameters of the cutting line according to the preset cutting size;

[0058] S3: driving the wire transport mechanism to perform a linear upward movement toward the single crystal ingot, and allowing the cutting wire in the wire transport mechanism to simultaneously advance upward along the first wire feed direction and the second wire feed direction to cut the single crystal ingot to obtain a single crystal wire.

[0059] The single-crystal copper ingot is a 100mm diameter, 2m long, 100mm diameter, 2m long, 100mm diameter, 2m long metal single-crystal ingot produced by the Czochralski method. One end of the single-crystal copper ingot is glued to the lifting device. The cutting wire is made of diamond steel wire, with a 1mm spacing and a feed rate of 1mm / min. The angle between the second multi-wire cutting layer and the first multi-wire cutting layer is 90°.

[0060] Example 5

[0061] The same preparation method as in Example 4 was used, except that the single crystal ingot to be cut was a 150 mm diameter, 1 m long, isodiametrically grown portion of a single crystal Fe-Ga ingot prepared by the crucible lowering method. One end of the single crystal Fe-Ga ingot was glued to a lifting device. The cutting wire was made of diamond-tungsten wire, with a 5 mm cutting wire spacing and a feed rate of 0.1 mm / min. The angle between the second multi-wire cut and the first multi-wire cut was 60°.

[0062] Example 6

[0063] The same preparation method as in Example 4 was used, except that the single crystal ingot to be cut was a uniformly grown portion of a single crystal titanium ingot with a diameter of 80 mm and a length of 3 m, prepared by a zone melting method. One end of the single crystal titanium ingot was glued to a lifting device. The cutting wire was made of diamond steel wire, the cutting wire spacing was 3 mm, the feed speed was 0.2 mm / min, and the angle between the second multi-wire cutting layer and the first multi-wire cutting layer was 90°.

[0064] Comparative Example 1

[0065] The same metal single crystal ingot as in Example 1 was used to prepare metal single crystal wires of the same quantity and size by a drawing method.

[0066] Comparative Example 2

[0067] The same metal single crystal ingot as in Example 1 was used and the ingot was cut multiple times by the single wire cutting method. The metal single crystal ingot was cut into a metal sheet with a thickness of 1 mm for the first time. The metal sheet was rotated 90° and then cut for the second time to be a metal single crystal wire with a width of 1 mm.

[0068] Comparative Example 3

[0069] The same preparation method as in Example 4 is adopted, except that the material of the cutting wire is steel wire.

[0070] The data of the cutting process of the above Examples 4 to 6 and Comparative Examples 1 to 3 were recorded, and the geometric parameters, surface quality, internal structure and performance of the finished metal single crystal wires were tested respectively. The test results are detailed in Table 1.

[0071] Table 1 Preparation process data of metal single crystal wire and finished product test results

[0072]

[0073]

[0074] Experimental conclusion:

[0075] Through the experimental data of Examples 4 to 6 and Comparative Example 1 above, it can be calculated and analyzed that the influence of the single crystal wire preparation method of the present application on the quality and various parameters of the single crystal wire compared with the drawing method, and it is concluded that the metal single crystal wire prepared by the single crystal wire preparation method of the present application has high internal grain integrity and does not have polycrystalline phenomenon, which can effectively improve the quality of the metal single crystal wire.

[0076] Through the experimental data of Examples 4 to 6 and Comparative Example 2 above, it can be calculated and analyzed that the influence of the single crystal wire preparation method of the present application on the quality and various parameters of the single crystal wire compared with the single wire cutting method, and it is concluded that the metal single crystal wire prepared by the single crystal wire preparation method of the present application has a good surface condition, a high qualified rate of finished products and a low loss of the cutting wire, and there is no need to frequently replace the cutting wire, which effectively improves the preparation efficiency of the metal single crystal wire.

[0077] Through the experimental data of Examples 4 to 6 and Comparative Example 3 above, it can be calculated and analyzed that the use of diamond as a steel wire abrasive in this application affects the quality and various parameters of single crystal wires compared to ordinary steel wire cutting, and it is concluded that the use of diamond as a cutting wire abrasive can effectively reduce the loss of the cutting wire, eliminate the need for frequent replacement of the cutting wire, and improve the preparation efficiency of metal single crystal wires.

[0078] In summary, it can be seen from the embodiments provided in this application that the embodiments of this application effectively improve the preparation efficiency and quality of metal single crystal wires by optimizing the preparation device and method of metal single crystal wires.

[0079] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A single crystal wire preparation device, characterized in that: include: A machine tool body (1), a lifting device (2) arranged on the upper part of the machine tool body (1), a wire transport mechanism (3) performing reciprocating linear motion on the machine tool body (1), and a lifting drive mechanism, wherein the wire transport mechanism (3) comprises a first cutting wheel group (31), a second cutting wheel group (32) located below the first cutting wheel group (31), and a direction-changing roller (33) arranged at the junction of the first cutting wheel group (31) and the second cutting wheel group (32); The first cutting wheel group (31) is wound with a plurality of cutting lines along a first line feed direction, and the second cutting wheel group (32) is wound with a plurality of cutting lines along a second line feed direction. The direction-changing roller (33) is respectively connected to the first cutting wheel group (31) and the second cutting wheel group (32) through the cutting lines. By adjusting the position and angle of the direction-changing roller (33), the angle of the cutting line in the second cutting wheel group (32) can be horizontally rotated by 1-90° relative to the first cutting wheel group (31), and the angle between the first line feed direction and the second line feed direction is 1-90°.

2. The single crystal wire preparation device according to claim 1, characterized in that: The first cutting wheel assembly (31) comprises a first pay-off and take-up wheel (311) and two first wire roller wheels (312) arranged opposite to each other along the first wire feed direction.

3. The single crystal wire preparation device according to claim 1, characterized in that: The second cutting wheel assembly (32) comprises a second pay-off and take-up wheel (321) and two second wire roller wheels (322) arranged opposite to each other along the second wire feeding direction.

4. A single crystal wire preparation device according to any one of claims 1 to 3, characterized in that: The cutting wire uses diamond as abrasive.

5. The single crystal wire preparation device according to claim 4, characterized in that: The cutting wire is made of either diamond steel wire or diamond tungsten wire.

6. A method for preparing a single crystal wire, using the single crystal wire preparation device according to any one of claims 1 to 5, characterized in that: include: Fix the single crystal ingot to be cut on the lifting device and lift it to the preset position; Adjusting the parameters of the cutting lines according to the preset cutting size; the parameters include the spacing between each of the cutting lines and the angle between the second feed direction and the first feed direction; The wire transport mechanism is driven to move upward in a straight line toward the single crystal ingot, and the cutting wire in the wire transport mechanism is simultaneously fed upward along the first wire feed direction and the second wire feed direction to cut the single crystal ingot to obtain a single crystal wire.

7. The method for preparing a single crystal wire according to claim 6, wherein: The spacing between the cutting lines is 30 μm-30 cm; The angle between the second feed direction and the first feed direction is 1-90°.

8. The method for preparing a single crystal wire according to claim 6, wherein: The cutting line has a feed speed of 0.01-5 mm / min.

9. Use of the apparatus for preparing a single crystal wire according to any one of claims 1 to 5, or the method for preparing a single crystal wire according to any one of claims 6 to 8 in preparing a metal single crystal wire.

10. The use according to claim 9, characterized in that The material of the metal single crystal wire includes any one of iron, copper, aluminum, titanium, iron alloy, copper alloy, titanium alloy and aluminum alloy.

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