Chamber matching method of semiconductor equipment

Abstract

The invention provides a cavity matching method of semiconductor equipment, which comprises a data providing step, an activation energy calculation step and a cavity matching judgment step, in the cavity matching judgment step, the difference rate between the apparent activation energy corresponding to a measured cavity and the apparent activation energy corresponding to a reference cavity is calculated, and the difference rate is calculated; and whether the chambers are matched is judged based on the activation energy difference rate. According to the method, an Arrhenius formula calculation method is introduced, activation energy under a specific reaction condition is calculated, the activation energy is used as a measurement standard to judge matching conditions among different chambers, the activation energy represents a difference value between average energy of activated molecules and average energy of reactant molecules, and the difference value represents a difference value between the average energy of the activated molecules and the average energy of the reactant molecules. The epitaxial chambers matched with each other have similar chemical reaction environments, and the activation energies of the epitaxial chambers are also similar. According to the chamber matching method of the semiconductor equipment, chamber matching of the semiconductor equipment such as a chemical vapor deposition epitaxial machine can be improved, the process is simple and easy to implement, and other pollution and defects cannot be introduced.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors and relates to a chamber matching method for semiconductor equipment. Background Art

[0002] Using chemical reactions of gases to form thin films is an important process in semiconductor device manufacturing, which is usually carried out in the chamber of semiconductor equipment. For example, chemical vapor deposition (CVD) is a process in which gaseous or vaporous substances react in the gas phase or at the gas-solid interface to form solid deposits. The process chamber of chemical vapor deposition equipment usually has multiple reaction chambers, which can significantly improve the utilization rate of the machine and reduce the process cost.

[0003] However, in the mass production of semiconductor devices, chamber matching problems are often encountered, which directly affects the quality and profitability of products. Matching chamber conditions will reduce the differences caused by the process to the product, increase the yield and competitiveness of the product. Otherwise, it will reduce the competitiveness of the product.

[0004] Therefore, how to provide a chamber matching method for semiconductor equipment to improve the chamber mismatch problem of semiconductor equipment has become an important technical problem that needs to be solved urgently by those skilled in the art.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0006] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a chamber matching method for semiconductor equipment, so as to solve the problem in the prior art that product yield is easily reduced due to mismatch of the semiconductor equipment cavity.

[0007] To achieve the above objectives and other related objectives, the present invention provides a chamber matching method for semiconductor equipment, comprising:

[0008] Data providing step: providing first experimental data and second experimental data, wherein the first experimental data includes different growth temperatures set respectively under specified process conditions in a reference chamber and growth rates of a preset material layer on the marking layer under each corresponding temperature condition, and the second experimental data includes different growth temperatures set respectively under specified process conditions in a measured chamber and growth rates of a preset material layer on the marking layer under each corresponding temperature condition;

[0009] Activation energy calculation step: taking the growth rate of the preset material layer on the marking layer as the reaction rate constant k, fitting the first experimental data according to the Arrhenius formula to obtain the apparent activation energy corresponding to the reference chamber, and fitting the second experimental data according to the Arrhenius formula to obtain the apparent activation energy corresponding to the measured chamber, wherein the Arrhenius formula is k = Ae -Ea / RT , k is the reaction rate constant, R is the molar gas constant, T is the thermodynamic temperature, Ea is the apparent activation energy, and A is the pre-exponential factor;

[0010] Chamber matching judgment step: calculating the difference rate between the apparent activation energy corresponding to the chamber under test and the apparent activation energy corresponding to the reference chamber, and judging whether the chamber under test matches the reference chamber based on the activation energy difference rate.

[0011] Optionally, the growth rate is equal to the growth thickness divided by the specified growth time.

[0012] Optionally, judging whether the chamber under test matches the reference chamber based on the activation energy difference rate comprises the following steps:

[0013] Determining whether the activation energy difference rate exceeds a first preset range;

[0014] If yes, then the process parameters and equipment parameters of the chamber under test are checked and adjusted, and after the correction of the problem item of the chamber under test is completed, the process returns to the data providing step;

[0015] If not, further calculate the difference between the growth thickness of the preset material layer in the measured chamber at the preset growth temperature and the specified growth time and the growth thickness of the preset material layer in the reference chamber at the reference growth temperature and the specified growth time, and judge whether the measured chamber matches the reference chamber based on the growth thickness difference rate.

[0016] Optionally, judging whether the chamber under test matches the reference chamber based on the growth thickness difference rate comprises the following steps:

[0017] Determining whether the growth thickness difference rate exceeds a second preset range;

[0018] If so, the growth temperature T1 corresponding to the reference thickness is calculated according to the formula k0=A1e-Ea1 / RT, and the preset growth temperature of the measured chamber is adjusted to T1, wherein the reference thickness is the growth thickness of the preset material layer in the reference chamber at the reference growth temperature and the specified growth time, k0 is equal to the reference thickness divided by the specified growth time, Ea1 is the apparent activation energy corresponding to the measured chamber obtained in the activation energy calculation step, and A1 is the pre-exponential factor corresponding to the measured chamber obtained in the activation energy calculation step;

[0019] If not, it is determined that the chamber under test matches the reference chamber.

[0020] Optionally, after adjusting the preset growth temperature of the chamber under test to T1, continue to obtain the growth thickness of the preset material layer in the chamber under test at the temperature T1 and the specified growth time, and return to the step of judging whether the chamber under test matches the reference chamber based on the growth thickness difference rate.

[0021] Optionally, the method of adjusting the preset growth temperature of the chamber under test to T1 includes: establishing a temperature compensation table in the process menu of the chamber under test, and adjusting the actual growth temperature of the preset material layer in the chamber under test based on the temperature compensation table.

[0022] Optionally, the semiconductor device includes a chemical vapor deposition epitaxial machine.

[0023] Optionally, the marking layer includes a silicon germanium layer, and the preset material layer includes a silicon layer.

[0024] Optionally, in the data providing step, a single silicon source is used to grow the preset material layer.

[0025] Optionally, the single silicon source is silane or dichlorosilane.

[0026] As described above, the chamber matching method of the semiconductor equipment of the present invention includes a data providing step, an activation energy calculation step and a chamber matching judgment step, wherein the chamber matching judgment step calculates the difference between the apparent activation energy corresponding to the measured chamber and the apparent activation energy corresponding to the reference chamber, and judges whether the measured chamber matches the reference chamber based on the activation energy difference rate. The present invention calculates the activation energy under specific reaction conditions by introducing the Arrhenius formula calculation method, and uses this as a criterion to judge the matching conditions between different chambers, wherein the activation energy represents the difference between the average energy of the activated molecules and the average energy of the reactant molecules. Epitaxial chambers that match each other should have similar chemical reaction environments, and their activation energies should also be similar. The chamber matching method of the semiconductor equipment of the present invention can improve the chamber matching of semiconductor equipment such as chemical vapor deposition epitaxial machines, and the process is simple and easy to implement without introducing other pollution and defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram showing the cross-sectional structure of a PMOS transistor embedded in SiGe strained material.

[0028] Figure 2 A flow chart of a chamber matching method for a semiconductor device according to the present invention is shown.

[0029] Figure 3Shown is a fitting curve graph obtained by fitting the experimental data of the reference chamber according to the Arrhenius formula.

[0030] Figure 4 The figure shows a fitting curve obtained by fitting the experimental data of the chamber under test according to the Arrhenius formula.

[0031] Figure 5 Shown is a flowchart example showing a specific determination process of the chamber matching method for semiconductor equipment of the present invention.

[0032] Description of Reference Numerals

[0033] 101 P-type silicon substrate

[0034] 102 Isolation Structure

[0035] 103 Gate Structure

[0036] 104 SiGe layers DETAILED DESCRIPTION

[0037] As integrated circuits gradually develop towards smaller line widths, carriers are required to have higher migration rates. By selectively epitaxying and embedding silicon germanium (SiGe) strained materials in the source and drain regions of PMOS, <110> Compressive stress is generated on the channel in the crystal direction to meet the requirements of the new node.

[0038] like Figure 1 FIG. 1 is a schematic diagram of a cross-sectional structure of a PMOS transistor embedded with SiGe strained material, including <110> A P-type silicon substrate 101 with a crystalline orientation, an isolation structure 102, a gate structure 103 located on the P-type silicon substrate 101, and a SiGe layer 104 in the P-type silicon substrate 101 located on both sides of the gate structure 103, wherein: Figure 1 Arrows are used in the figure to show the stress direction applied by the SiGe layer 104 to the channel.

[0039] In the mass production of selective SiGe epitaxy technology, chamber mismatch is often encountered, which directly affects the quality and revenue of the product, because the chamber conditions that match each other will make the difference between the process and the product smaller, increase the yield and competitiveness of the product, and vice versa, it will reduce the competitiveness of the product. In addition, in the selective SiGe epitaxy process, various reaction parameters such as temperature significantly affect the epitaxy condition, which is also an important focus of chamber matching.

[0040] The invention provides a chamber matching method for semiconductor equipment, which can improve the chamber mismatch problem of chemical vapor deposition epitaxial machine or other semiconductor equipment using gas chemical reaction.

[0041] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] See also Figures 2 to 5 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0043] The present invention provides a chamber matching method for semiconductor equipment, see Figure 2 , which is shown as a flow chart of the method, including a data providing step, an activation energy calculating step and a chamber matching judging step.

[0044] Specifically, in the data providing step, first experimental data and second experimental data are provided, wherein the first experimental data include different growth temperatures set respectively under specified process conditions in a reference chamber and growth rates (GR) of a preset material layer on a mark layer under each corresponding temperature condition, and the second experimental data include different growth temperatures set respectively under specified process conditions in a measured chamber and growth rates of a preset material layer on a mark layer under each corresponding temperature condition.

[0045] Specifically, the semiconductor device described in this embodiment is described by taking a chemical vapor deposition epitaxial machine as an example. However, it should be noted that the chamber matching method of the semiconductor device of the present invention is also applicable to other semiconductor devices that utilize gas chemical reactions.

[0046] Specifically, the reference chamber is usually a chamber that has been verified and has a relatively stable film quality. The number of chambers to be tested can be one or more. If there are multiple chambers to be tested, corresponding experimental data are obtained for each chamber. In this embodiment, one chamber to be tested is used as an example for description.

[0047] As an example, in this embodiment, the marking layer is a silicon germanium layer, and the preset material layer is a silicon layer. In other embodiments, the specific materials of the marking layer and the preset material layer can be adjusted as needed.

[0048] As an example, in order to control variables, a single silicon source, such as silane (SiH 4 ) or dichlorosilane (DCS), is used to grow the predetermined material layer.

[0049] As an example, if SiH4 is selected as the silicon source, the gas flow range of SiH4 is 200sccm~600sccm, and the specified growth time range is 400 seconds~1200 seconds; if DCS is selected as the silicon source, the gas flow range of DCS is 200sccm~800sccm, and the specified growth time range is 400 seconds~1200 seconds.

[0050] Specifically, the growth rate is equal to the growth thickness divided by the specified growth time. In a set of DOE (Design of Experiments) experiments, different GRs can be obtained by changing the growth temperature.

[0051] Specifically, in the activation energy calculation step, the growth rate of the preset material layer on the marking layer is taken as the reaction rate constant k, and the first experimental data is fitted according to the Arrhenius formula to obtain the apparent activation energy and pre-exponential factor corresponding to the reference chamber, and the second experimental data is fitted according to the Arrhenius formula to obtain the apparent activation energy and pre-exponential factor corresponding to the measured chamber, wherein the Arrhenius formula is k=Ae -Ea / RT , k is the reaction rate constant, R is the molar gas constant (in J / (mol·K), T is the thermodynamic temperature (in K), Ea is the apparent activation energy (in J / mol), and A is the pre-exponential factor (also called the frequency factor).

[0052] Specifically, the Arrhenius equation is an empirical formula for the relationship between the chemical reaction rate constant and temperature, which was created by Arrhenius of Sweden. Within a certain temperature range, the activation energy can be considered constant; the activation energy can be calculated using the Arrhenius equation.

[0053] The matching of semiconductor equipment chamber hardware ultimately depends on the matching of process parameters, among which the airflow can be achieved by mass flow controller (MFC) calibration, and temperature control is achieved by using a temperature controller (such as pyro). In actual situations, it is often encountered that different chambers do not match after MFC calibration. To solve such problems, there is often a lack of a measurement standard. Activation energy represents the difference between the average energy of activated molecules and the average energy of reactant molecules. Semiconductor equipment chambers that match each other should have similar chemical reaction environments, and their activation energies should also be similar. The chamber matching method of the semiconductor equipment of the present invention calculates the activation energy under specific reaction conditions by introducing the Arrhenius formula calculation method, and uses this as a measurement standard to judge the matching conditions between different chambers.

[0054] As an example, see Figure 3 and Figure 4 ,in, Figure 3The figure shows the fitting curve obtained by fitting the experimental data of the reference chamber according to the Arrhenius formula. Figure 4 It shows a fitting curve diagram obtained by fitting the experimental data of the measured chamber according to the Arrhenius formula. The unknown quantities in the Arrhenius formula, namely the activation energy Ea and the pre-exponential factor A, can be calculated through the formula corresponding to the fitting curve, wherein the reference chamber and the measured chamber have their own activation energy Ea values ​​and pre-exponential factor A values, respectively.

[0055] It should be noted that the amount of test data corresponding to each chamber can be adjusted as needed, not limited to Figure 3 or Figure 4 For the three shown in , within a certain temperature range, the more data there is, the closer the correlation coefficient is to 1, and the more accurate the fitting result is.

[0056] Specifically, in the chamber matching determination step, the difference ratio between the apparent activation energy corresponding to the measured chamber and the apparent activation energy corresponding to the reference chamber is calculated, and based on the activation energy difference ratio, it is determined whether the measured chamber matches the reference chamber.

[0057] As an example, judging whether the chamber under test matches the reference chamber based on the activation energy difference rate includes the following steps:

[0058] Determining whether the activation energy difference rate exceeds a first preset range;

[0059] If yes, then the process parameters and equipment parameters of the chamber under test are checked and adjusted, and after the adjustment of the chamber under test is completed, the process returns to the data providing step;

[0060] If not, further calculate the difference between the growth thickness of the preset material layer in the measured chamber at the preset growth temperature and the specified growth time and the growth thickness of the preset material layer in the reference chamber at the reference growth temperature and the specified growth time, and judge whether the measured chamber matches the reference chamber based on the growth thickness difference rate.

[0061] As an example, see Figure 5 , shown as an example of a specific judgment process, wherein the first preset range is 6%, that is, if the ratio of the activation energy difference to the activation energy corresponding to the reference chamber (activation energy difference rate) is greater than 6%, then the chamber under test is determined to be mismatched with the reference chamber. Because the activation energy difference rate is too large, it means that the chamber under test and the reference chamber have different chemical reaction environments. It is necessary to check whether there are any abnormalities in the various parameters in the process menu of the chamber under test and the various hardware parameters of the equipment, and make corresponding adjustments. And if the ratio of the activation energy difference to the activation energy corresponding to the reference chamber (activation energy difference rate) is less than or equal to 6%, then it is determined that the chamber under test and the reference chamber are preliminarily matched. Among them, according to Figure 3 and Figure 4The fitting formula corresponding to the fitting curve shows that the activation energy of the measured chamber is close to that of the reference chamber (the difference rate is less than 6%).

[0062] It should be noted that, in other embodiments, the first preset range may also be adjusted according to actual needs.

[0063] Specifically, after it is determined that the measured chamber and the reference chamber are preliminarily matched, further detailed judgment can be performed as needed, that is, the difference between the growth thickness of the preset material layer in the measured chamber at the preset growth temperature and the specified growth time and the growth thickness of the preset material layer in the reference chamber at the reference growth temperature and the specified growth time is further calculated, and whether the measured chamber and the reference chamber match is judged based on the growth thickness difference rate.

[0064] As an example, see Figure 5 , judging whether the chamber under test matches the reference chamber based on the growth thickness difference rate includes the following steps:

[0065] Determining whether the growth thickness difference rate exceeds a second preset range;

[0066] If so, the growth temperature T1 corresponding to the reference thickness is calculated according to the formula k0=A1e-Ea1 / RT, and the preset growth temperature of the measured chamber is adjusted to T1, wherein the reference thickness is the growth thickness of the preset material layer in the reference chamber at the reference growth temperature and the specified growth time, k0 is equal to the reference thickness divided by the specified growth time, Ea1 is the apparent activation energy corresponding to the measured chamber obtained in the activation energy calculation step, and A1 is the pre-exponential factor corresponding to the measured chamber obtained in the activation energy calculation step;

[0067] If not, it is determined that the chamber under test matches the reference chamber.

[0068] As an example, the second preset range is 3%, that is, if the ratio of the growth thickness difference to the reference thickness (growth thickness difference rate) is greater than 3%, it is determined that the measured chamber does not match the reference chamber; if the ratio of the growth thickness difference to the reference thickness (growth thickness difference rate) is less than or equal to 3%, it is determined that the measured chamber matches the reference chamber.

[0069] It should be noted that, in other embodiments, the second preset range may also be adjusted according to actual needs.

[0070] As an example, the method for adjusting the preset growth temperature of the chamber under test to T1 includes: establishing a temperature compensation table in the process menu of the chamber under test, and adjusting the actual growth temperature of the preset material layer in the chamber under test based on the temperature compensation table. For example, if the average value of the growth thickness of the preset material layer in the chamber under test at the preset growth temperature and the specified growth time is 301 angstroms, and the reference thickness is 275 angstroms, the Arrhenius formula is used to calculate (the corresponding k value can be calculated using the reference thickness) to obtain the corresponding temperature value, and the difference between the temperature value and the original growth temperature parameter in the process menu of the chamber under test is used as the compensation temperature in the temperature compensation table. When the chamber under test is used for a formal thin film deposition process, the original growth temperature is compensated using the temperature compensation table. For example, if the original growth temperature is 390°C and the compensation temperature in the temperature compensation table is +10 degrees Celsius, the growth temperature is adjusted to 400°C in the actual process. This is only an example. For example, in another embodiment, if the compensation temperature in the temperature compensation table is -2°C, it means that in the actual process the growth temperature needs to be lowered by 2°C from the original growth temperature.

[0071] As an example, see Figure 5 After adjusting the preset growth temperature of the measured chamber to T1, continue to obtain the growth thickness of the preset material layer in the measured chamber at the temperature T1 and the specified growth time, and return to the step of judging whether the measured chamber matches the reference chamber based on the growth thickness difference rate, until it is judged that the growth temperatures of the measured chamber and the reference chamber match according to the growth thickness difference rate.

[0072] In summary, the chamber matching method of the semiconductor device of the present invention includes a data providing step, an activation energy calculation step and a chamber matching judgment step, wherein the chamber matching judgment step calculates the difference between the apparent activation energy corresponding to the measured chamber and the apparent activation energy corresponding to the reference chamber, and judges whether the measured chamber matches the reference chamber based on the activation energy difference rate. The present invention calculates the activation energy under specific reaction conditions by introducing the Arrhenius formula calculation method, and uses this as a criterion to judge the matching conditions between different chambers, wherein the activation energy represents the difference between the average energy of the activated molecules and the average energy of the reactant molecules. The epitaxial chambers that match each other should have similar chemical reaction environments, and their activation energies should also be similar. The chamber matching method of the semiconductor device of the present invention can improve the chamber matching of semiconductor equipment such as chemical vapor deposition epitaxial machines, and the process is simple, easy to implement, and will not introduce other pollution and defects. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0073] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A chamber matching method for semiconductor equipment, characterized in that: include: Data providing step: providing first experimental data and second experimental data, wherein the first experimental data includes different growth temperatures set respectively under specified process conditions in a reference chamber and growth rates of a preset material layer on the marking layer under each corresponding temperature condition, and the second experimental data includes different growth temperatures set respectively under specified process conditions in a measured chamber and growth rates of a preset material layer on the marking layer under each corresponding temperature condition; Activation energy calculation step: taking the growth rate of the preset material layer on the marking layer as the reaction rate constant k, fitting the first experimental data according to the Arrhenius formula to obtain the apparent activation energy corresponding to the reference chamber, and fitting the second experimental data according to the Arrhenius formula to obtain the apparent activation energy corresponding to the measured chamber, wherein the Arrhenius formula is k = Ae -Ea / RT , k is the reaction rate constant, R is the molar gas constant, T is the thermodynamic temperature, Ea is the apparent activation energy, and A is the pre-exponential factor; Chamber matching judgment step: calculating the difference rate between the apparent activation energy corresponding to the chamber under test and the apparent activation energy corresponding to the reference chamber, and judging whether the chamber under test matches the reference chamber based on the activation energy difference rate.

2. The chamber matching method of semiconductor equipment according to claim 1, characterized in that: The growth rate is equal to the growth thickness divided by the specified growth time.

3. The chamber matching method of semiconductor equipment according to claim 2, characterized in that: Judging whether the chamber under test matches the reference chamber based on the activation energy difference rate includes the following steps: Determining whether the activation energy difference rate exceeds a first preset range; If yes, then the process parameters and equipment parameters of the chamber under test are checked and adjusted, and after the correction of the problem item of the chamber under test is completed, the process returns to the data providing step; If not, further calculate the difference between the growth thickness of the preset material layer in the measured chamber at the preset growth temperature and the specified growth time and the growth thickness of the preset material layer in the reference chamber at the reference growth temperature and the specified growth time, and judge whether the measured chamber matches the reference chamber based on the growth thickness difference rate.

4. The chamber matching method of semiconductor equipment according to claim 3, characterized in that: Judging whether the chamber under test matches the reference chamber based on the growth thickness difference rate includes the following steps: Determining whether the growth thickness difference rate exceeds a second preset range; If so, the growth temperature T1 corresponding to the reference thickness is calculated according to the formula k0=A1e-Ea1 / RT, and the preset growth temperature of the measured chamber is adjusted to T1, wherein the reference thickness is the growth thickness of the preset material layer in the reference chamber at the reference growth temperature and the specified growth time, k0 is equal to the reference thickness divided by the specified growth time, Ea1 is the apparent activation energy corresponding to the measured chamber obtained in the activation energy calculation step, and A1 is the pre-exponential factor corresponding to the measured chamber obtained in the activation energy calculation step; If not, it is determined that the chamber under test matches the reference chamber.

5. The chamber matching method of semiconductor equipment according to claim 4, characterized in that: After adjusting the preset growth temperature of the chamber under test to T1, continue to obtain the growth thickness of the preset material layer in the chamber under test at the temperature T1 and the specified growth time, and return to the step of judging whether the chamber under test matches the reference chamber based on the growth thickness difference rate.

6. The chamber matching method of semiconductor equipment according to claim 4, characterized in that: The method for adjusting the preset growth temperature of the measured chamber to T1 includes: establishing a temperature compensation table in the process menu of the measured chamber, and adjusting the actual growth temperature of the preset material layer in the measured chamber based on the temperature compensation table.

7. The chamber matching method of semiconductor equipment according to claim 1, characterized in that: The semiconductor equipment includes a chemical vapor deposition epitaxial machine.

8. The chamber matching method of semiconductor equipment according to claim 7, characterized in that: The marking layer includes a silicon germanium layer, and the preset material layer includes a silicon layer.

9. The chamber matching method of semiconductor equipment according to claim 8, characterized in that: In the data providing step, a single silicon source is used to grow the predetermined material layer.

10. The chamber matching method of semiconductor equipment according to claim 9, characterized in that: The single silicon source is silane or dichlorosilane.

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