Thickness measurement method and system for electrochemical deposition nano-film
Through the multi-wavelength optical interference method, the interference fringe phase on the surface of the nanofilm is collected in real time, and the thickness is calculated and corrected, which solves the problem of the inability to monitor in real time and the low measurement accuracy of the existing technology, and achieves high precision of the thickness of the nanofilm during the electrochemical deposition process. Accurate real-time monitoring.
Patent Information
- Application Number
- CN202411580405.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-07
- Publication Date
- 2025-01-24
AI Technical Summary
The existing nanofilm thickness measurement technology cannot monitor thickness changes during electrochemical deposition in real time, and the traditional single-wavelength and multi-wavelength optical interference methods have problems such as low measurement accuracy and high data processing complexity.
The multi -wavelength optical interference method is adopted to form a multi -wavelength beam through three different wavelengths of light sources. In real time, the interference stripes on the surface of the nano -thin film surface are collected in real time. Based on this calculation, the preliminary calculation thickness of the nano -thin film is calculated in real time. Errors, the actual calculation thickness of the output.
Real -time monitoring of nano -film thickness during the electrochemical deposition process, improvement of measurement accuracy and anti -interference ability, reducing errors caused by environmental fluctuations, and optimizing production efficiency and material utilization rate.
Smart Images
Figure CN119354073A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of nano film thickness measurement, and relates to a thickness measurement method and system for an electrochemically deposited nano film. Background Art
[0002] With the development of nanotechnology, electrochemical deposition technology has been widely used in the preparation of nanofilms. However, existing thickness measurement technologies, such as ellipsometry and X-ray reflectometry, usually require measurement after deposition is completed and cannot monitor the thickness change during the deposition process in real time. Optical interferometry has gradually been applied to the measurement of nanofilm thickness due to its high sensitivity and non-contact measurement characteristics.
[0003] However, the traditional single-wavelength optical interferometry is easily affected by environmental noise and multi-layer reflection when measuring nano-scale thin films, resulting in low measurement accuracy. Multi-wavelength optical interferometry can improve measurement accuracy and anti-interference ability by introducing multiple wavelengths of light sources, but in practical applications, there are still problems such as high measurement complexity and inaccurate data processing. Summary of the invention
[0004] In view of the above problems in the prior art, the present invention provides a method and system for measuring the thickness of an electrochemically deposited nanofilm, which are used to solve the above technical problems.
[0005] In order to achieve the above purpose and other purposes, the technical solution adopted by the present invention is as follows: In one aspect, the present invention provides a method for measuring the thickness of an electrochemically deposited nanofilm, the method comprising the following steps: A nanofilm is formed on an electrode substrate by electrochemical deposition technology, and three light sources of different wavelengths are coupled to an interference device through optical fibers to form a multi-wavelength light beam that simultaneously irradiates the surface of the nanofilm formed during the electrochemical deposition process. Each wavelength light beam is reflected on the surface of the nanofilm and interferes with the reference light beam, generating interference fringes of reflected light of each wavelength. The phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point is collected by a spectrometer, and the preliminary calculated thickness of the nano film at the current deposition time point is obtained based on the phase of the interference fringes; The calculation error of the nanofilm thickness caused by environmental changes is calculated in real time, and the actual calculated thickness of the nanofilm at the current deposition time point is obtained and output to the display device.
[0006] Exemplarily, the preliminary calculated thickness of the nanofilm at the current deposition time point is calculated, wherein the calculation steps include the following: Step 1: Analyze the phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point, perform correction analysis on it, and obtain the actual phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point; Step 2: Calculate the phase difference of the reflected light of each wavelength corresponding to the nanofilm; Step 3: Based on the phase difference of the reflected light of each wavelength corresponding to the nanofilm, the preliminary calculated thickness of the nanofilm at the current deposition time point is finally calculated.
[0007] Exemplarily, in step 1, the actual phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point is obtained, and the specific process is: Based on the phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point , b is the number of each wavelength, b=1,2,3; Based on the sensors arranged in the interferometer, the temperature of the interferometer at the current deposition time point is collected. The actual phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point is obtained by comprehensive analysis. ; in is the optical path difference of the interference fringes corresponding to the reflected light of the bth wavelength at the current deposition time point, is the temperature difference of the interferometer at the current deposition time point corresponding to the previous deposition time point; is the set temperature expansion coefficient; is the wavelength of the interference fringe corresponding to the reflected light of wavelength b at the current deposition time point, is the wavelength change difference of the interference fringes corresponding to the reflected light of the bth wavelength at the current deposition time point and the previous deposition time point; is the wavelength of the reference beam at the current deposition time point, is the wavelength change difference of the reference beam at the current deposition time point.
[0008] Exemplarily, in step 2, the phase difference of the reflected light of each wavelength corresponding to the nanofilm is calculated, and the specific calculation process is: At the current deposition time point, arbitrarily select two reflected lights of different wavelengths, and define the preliminary calculated thickness of the nanofilm at the current deposition time point as an unknown number , import the theoretical calculation formula of the phase difference of two different wavelengths of reflected light at the current deposition time point , n is the refractive index of the material corresponding to the nanofilm, is the wavelength of the b-th reflected light; is the theoretical calculated phase difference of the b-th reflected light of different wavelength at the current deposition time point, A phase correction value generated for a preset reflection; Then the theoretical calculated phase difference of the first wavelength reflected light at the current deposition time point is obtained: And the theoretical calculated phase difference of the second wavelength reflected light at the current deposition time point ; Subtract the above two to eliminate the current deposition time point and the phase correction value generated by the reflection ,get: , are wavelengths of the first wavelength reflected light and the second wavelength reflected light respectively; After rearranging the above formula, we can get ; At the same time, the unknowns are eliminated by the ratio of the phase difference , and rearrange the above formula to: ; Then the theoretical calculation formula for the phase difference of reflected light of wavelengths other than the reflected light of two different wavelengths is: , are the wavelengths of the reflected light except for the two different wavelengths of reflected light; the unknown number The calculation formula is imported into the above formula and simplified to obtain: ; According to the calculation method of the phase difference of the reflected light of wavelengths other than the reflected light of two different wavelengths, the phase difference of the reflected light of other wavelengths is calculated in the same way, and the phase difference of the reflected light of the nanofilm corresponding to each wavelength is obtained by integrating them. .
[0009] Exemplarily, in step 3, the preliminary calculated thickness of the nanofilm at the current deposition time point is calculated using the specific calculation formula: Define the initial calculated thickness of the nanofilm at the current deposition time as an unknown , import the theoretical phase difference calculation formula of each wavelength reflected light at the current deposition time point ; is the theoretically calculated phase difference of the reflected light of the bth wavelength at the current deposition time point; The sum of squares of the phase errors of the multi-wavelength beam corresponding to the reflected light at the current deposition time point is calculated ; The sum of squares of phase errors of the multi-wavelength beam corresponding to the reflected light at the current deposition time point is calculated Derivation, get , d is the integral symbol; And let the above formula be zero, and then we get the equation: ; Expanding the above equation, we get ; The initial calculated thickness of all nanofilms at the current deposition time point Move the irrelevant terms to the right side of the equation, and you get The specific solution formula is as follows: .
[0010] For example, the calculation error of the nanofilm thickness caused by environmental changes is calculated in real time, and the specific correction process is as follows: According to the sensors arranged in the interference device, the reaction activation energy B, solution concentration C and current density D of the interference device at the current deposition time point are obtained; The calculation error of nanofilm thickness caused by environmental changes is calculated from this , e is a natural constant, T0, C0 and D0 are the initial temperature, initial solution concentration and initial current density of the interference device respectively; R is the gas constant, is the initial thickness of the nanofilm under the corresponding initial conditions, is the set thickness correction factor.
[0011] Exemplarily, the logic for obtaining the actual calculated thickness of the nanofilm at the current deposition time point is: The preliminary calculated thickness of the nanofilm at the current deposition time point Subtract the calculation error of nanofilm thickness caused by environmental changes , thereby obtaining the actual calculated thickness of the nanofilm at the current deposition time point.
[0012] Another aspect of the present invention provides a thickness measurement system for an electrochemically deposited nanofilm, the system comprising a nanofilm deposition module, a thickness preliminary calculation module and a thickness error correction module, wherein the above modules are connected by wired and / or wireless connection to achieve data transmission between the modules; Nanofilm deposition module: A nanofilm is formed on an electrode substrate by electrochemical deposition technology. Three light sources with different wavelengths are coupled to an interference device through optical fibers to form a multi-wavelength beam that simultaneously irradiates the surface of the nanofilm formed during the electrochemical deposition process. Each wavelength beam is reflected on the surface of the nanofilm and interferes with the reference beam, generating interference fringes of reflected light of each wavelength. Preliminary thickness calculation module: collects the phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point through the spectrometer, and calculates the preliminary calculated thickness of the nano film at the current deposition time point based on the phase; Thickness error correction module: Real-time calculation of the nanofilm thickness calculation error caused by environmental changes, and then obtain the actual calculated thickness of the nanofilm at the current deposition time point, and output it to the display device.
[0013] As described above, the present invention provides a method and system for measuring the thickness of an electrochemically deposited nanofilm, which has at least the following beneficial effects: The present invention provides a method and system for measuring the thickness of an electrochemically deposited nanofilm. The use of a multi-wavelength light beam enables light of different wavelengths to produce different interference fringes on the surface of the nanofilm, thereby effectively avoiding the phase ambiguity problem that may occur under a single wavelength and ensuring the accuracy of thickness measurement. By using a spectrometer to collect the phase of the interference fringes of each wavelength and perform preliminary thickness calculations, the growth information of the nanofilm can be quickly obtained, which is convenient for timely feedback and control. By calculating the impact of environmental changes (such as temperature, solution concentration, current density, etc.) on the deposition process in real time, the thickness error can be dynamically corrected to ensure that the final calculated result is consistent with the actual thickness, thereby improving the uniformity and functionality of the film quality. This method not only improves the controllability of the deposition process, but also reduces the error accumulation caused by environmental fluctuations, thereby optimizing production efficiency and material utilization. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for describing the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.
[0015] Figure 1 It is a schematic diagram of the connection of each step of the method of the present invention.
[0016] Figure 2 It is a schematic diagram of the structure of each module of the system of the present invention. DETAILED DESCRIPTION
[0017] The above contents in combination with the implementation of the present invention are merely examples and explanations of the concept of the present invention. The technical personnel in the relevant technical field may make various modifications or supplements to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the concept of the invention or exceed the scope defined by the claims, they shall all fall within the protection scope of the present invention.
[0018] See also Figure 1 As shown, a method for measuring the thickness of an electrochemically deposited nanofilm comprises the following steps: Forming a nanofilm on an electrode substrate by electrochemical deposition technology, wherein the material of the nanofilm may include but is not limited to metals, oxides, sulfides or conductive polymers. The growth rate of the film is controlled by adjusting deposition parameters (such as current density, solution concentration, deposition time, etc.); Three light sources with different wavelengths are coupled to the interferometer through optical fibers, wherein the three light sources with different wavelengths are red, green and blue light sources, and the wavelengths are 650 nm, 532 nm and 450 nm respectively; A multi-wavelength light beam is formed to simultaneously irradiate the surface of the nanofilm formed in the electrochemical deposition process. Each wavelength light beam is reflected on the surface of the nanofilm and interferes with the reference light beam, generating interference fringes of reflected light of each wavelength.
[0019] The phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point is collected by a spectrometer, and the preliminary calculated thickness of the nano film at the current deposition time point is obtained based on the phase of the interference fringes; It should be noted that the preliminary calculated thickness of the nanofilm at the current deposition time point is calculated, wherein the calculation steps include the following: Step 1: Analyze the phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point, perform correction analysis on it, and obtain the actual phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point; In step 1, the actual phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point is obtained. The specific process is: Based on the phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point , b is the number of each wavelength, b=1,2,3; Based on the sensors arranged in the interferometer, the temperature of the interferometer at the current deposition time point is collected. The actual phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point is obtained by comprehensive analysis. ; in is the optical path difference of the interference fringes corresponding to the reflected light of the bth wavelength at the current deposition time point, is the temperature difference of the interferometer at the current deposition time point corresponding to the previous deposition time point; is the set temperature expansion coefficient; is the wavelength of the interference fringe corresponding to the reflected light of wavelength b at the current deposition time point, is the wavelength change difference of the interference fringes corresponding to the reflected light of the bth wavelength at the current deposition time point and the previous deposition time point; is the wavelength of the reference beam at the current deposition time point, is the wavelength change difference of the reference beam at the current deposition time point.
[0020] Step 2: Calculate the phase difference of the reflected light of each wavelength corresponding to the nanofilm; The connection between step 1 and step 2 is that step 1 analyzes the phase of the interference fringes of the reflected light of each wavelength at the current deposition time of the nanofilm, corrects the phase deviation caused by environmental factors or other changes, and thus obtains the actual phase of the reflected light of each wavelength; while step 2 further calculates the phase difference between the reflected light of different wavelengths based on the actual phase obtained in step 1. This phase difference reflects the change in the thickness or refractive index of the nanofilm. Therefore, step 1 provides accurate phase information for step 2, ensuring that the calculation of the phase difference can reflect the real physical state.
[0021] In step 2, the phase difference of the reflected light of each wavelength corresponding to the nanofilm is calculated. The specific calculation process is: At the current deposition time point, arbitrarily select two reflected lights of different wavelengths, and define the preliminary calculated thickness of the nanofilm at the current deposition time point as an unknown number , import the theoretical calculation formula of the phase difference of two different wavelengths of reflected light at the current deposition time point , n is the refractive index of the material corresponding to the nanofilm, is the wavelength of the b-th reflected light; is the theoretical calculated phase difference of the b-th reflected light of different wavelength at the current deposition time point, A phase correction value generated for a preset reflection; Then the theoretical calculated phase difference of the first wavelength reflected light at the current deposition time point is obtained: And the theoretical calculated phase difference of the second wavelength reflected light at the current deposition time point ; Subtract the above two to eliminate the current deposition time point and the phase correction value generated by the reflection ,get: , are wavelengths of the first wavelength reflected light and the second wavelength reflected light respectively; After rearranging the above formula, we can get ; At the same time, the unknowns are eliminated by the ratio of the phase difference , and rearrange the above formula to: ; Then the theoretical calculation formula for the phase difference of reflected light of wavelengths other than the reflected light of two different wavelengths is: , are the wavelengths of the reflected light except for the two different wavelengths of reflected light; the unknown number The calculation formula is imported into the above formula and simplified to obtain: ; According to the calculation method of the phase difference of the reflected light of wavelengths other than the reflected light of two different wavelengths, the phase difference of the reflected light of other wavelengths is calculated in the same way, and the phase difference of the reflected light of the nanofilm corresponding to each wavelength is obtained by integrating them. .
[0022] Step 3: Based on the phase difference of the reflected light of each wavelength corresponding to the nanofilm, the preliminary calculated thickness of the nanofilm at the current deposition time point is finally calculated.
[0023] In step 3, the preliminary calculated thickness of the nanofilm at the current deposition time point is calculated. The specific calculation formula is: Define the initial calculated thickness of the nanofilm at the current deposition time as an unknown , import the theoretical phase difference calculation formula of each wavelength reflected light at the current deposition time point ; is the theoretically calculated phase difference of the reflected light of the bth wavelength at the current deposition time point; The sum of squares of the phase errors of the multi-wavelength beam corresponding to the reflected light at the current deposition time point is calculated ; The sum of squares of phase errors of the multi-wavelength beam corresponding to the reflected light at the current deposition time point is calculated Derivation, get , d is the integral symbol; And let the above formula be zero, and then we get the equation: ; Expanding the above equation, we get ; The initial calculated thickness of all nanofilms at the current deposition time point Move the irrelevant terms to the right side of the equation, and you get The specific solution formula is as follows: .
[0024] The calculation error of the nanofilm thickness caused by environmental changes is calculated in real time, and the actual calculated thickness of the nanofilm at the current deposition time point is obtained and output to the display device.
[0025] It should be noted that the calculation error of the nanofilm thickness caused by environmental changes is calculated in real time. The specific correction process is as follows: According to the sensors arranged in the interference device, the reaction activation energy B, solution concentration C and current density D of the interference device at the current deposition time point are obtained; The calculation error of nanofilm thickness caused by environmental changes is calculated from this , e is a natural constant, T0, C0 and D0 are the initial temperature, initial solution concentration and initial current density of the interferometer respectively; R is the gas constant, about 8.314 J / mol·K, is the initial thickness of the nanofilm under the corresponding initial conditions, is the set thickness correction factor.
[0026] It should be noted that the logic for obtaining the actual calculated thickness of the nanofilm at the current deposition time point is: The preliminary calculated thickness of the nanofilm at the current deposition time point Subtract the calculation error of nanofilm thickness caused by environmental changes , thereby obtaining the actual calculated thickness of the nanofilm at the current deposition time point.
[0027] See also Figure 2 As shown, a thickness measurement system for electrochemically deposited nanofilms, the system includes a nanofilm deposition module, a thickness preliminary calculation module and a thickness error correction module, the above modules are connected by wired and / or wireless connection to achieve data transmission between the modules; Nanofilm deposition module: A nanofilm is formed on an electrode substrate by electrochemical deposition technology. Three light sources with different wavelengths are coupled to an interference device through optical fibers to form a multi-wavelength beam that simultaneously irradiates the surface of the nanofilm formed during the electrochemical deposition process. Each wavelength beam is reflected on the surface of the nanofilm and interferes with the reference beam, generating interference fringes of reflected light of each wavelength. Preliminary thickness calculation module: collects the phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point through the spectrometer, and calculates the preliminary calculated thickness of the nano film at the current deposition time point based on the phase; Thickness error correction module: Real-time calculation of the nanofilm thickness calculation error caused by environmental changes, and then obtain the actual calculated thickness of the nanofilm at the current deposition time point, and output it to the display device.
[0028] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.
[0029] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.
[0030] Finally: The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims
1. A method for measuring the thickness of an electrochemically deposited nanofilm, characterized in that: include: A nanofilm is formed on an electrode substrate by electrochemical deposition technology, and three light sources of different wavelengths are coupled to an interference device through optical fibers to form a multi-wavelength light beam that simultaneously irradiates the surface of the nanofilm formed during the electrochemical deposition process. Each wavelength light beam is reflected on the surface of the nanofilm and interferes with the reference light beam, generating interference fringes of reflected light of each wavelength. The phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point is collected by a spectrometer, and the preliminary calculated thickness of the nano film at the current deposition time point is obtained based on the phase of the interference fringes; The calculation error of the nanofilm thickness caused by environmental changes is calculated in real time, and the actual calculated thickness of the nanofilm at the current deposition time point is obtained and output to the display device.
2. The method for measuring the thickness of an electrochemically deposited nanofilm according to claim 1, characterized in that: The preliminary calculated thickness of the nanofilm at the current deposition time point is calculated, wherein the calculation steps include the following: Step 1: Analyze the phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point, perform correction analysis on it, and obtain the actual phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point; Step 2: Calculate the phase difference of the reflected light of each wavelength corresponding to the nanofilm; Step 3: Based on the phase difference of the reflected light of each wavelength corresponding to the nanofilm, the preliminary calculated thickness of the nanofilm at the current deposition time point is finally calculated.
3. The method for measuring the thickness of an electrochemically deposited nanofilm according to claim 2, characterized in that: In step 1, the actual phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point is obtained. The specific process is: Based on the phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point , b is the number of each wavelength, b=1,2,3; Based on the sensors arranged in the interferometer, the temperature of the interferometer at the current deposition time point is collected. The actual phase of the interference fringes of the reflected light of each wavelength of the nanofilm at the current deposition time point is obtained by comprehensive analysis. ; in is the optical path difference of the interference fringes corresponding to the reflected light of the bth wavelength at the current deposition time point, is the temperature difference of the interferometer at the current deposition time point corresponding to the previous deposition time point; is the set temperature expansion coefficient; is the wavelength of the interference fringe corresponding to the reflected light of wavelength b at the current deposition time point, is the wavelength change difference of the interference fringes corresponding to the reflected light of the bth wavelength at the current deposition time point and the previous deposition time point; is the wavelength of the reference beam at the current deposition time point, is the wavelength change difference of the reference beam at the current deposition time point.
4. The method for measuring the thickness of an electrochemically deposited nanofilm according to claim 2, characterized in that: In step 2, the phase difference of the reflected light of each wavelength corresponding to the nanofilm is calculated. The specific calculation process is: At the current deposition time point, arbitrarily select two reflected lights of different wavelengths, and define the preliminary calculated thickness of the nanofilm at the current deposition time point as an unknown number , import the theoretical calculation formula of the phase difference of two different wavelengths of reflected light at the current deposition time point , n is the refractive index of the material corresponding to the nanofilm, is the wavelength of the b-th reflected light; is the theoretical calculated phase difference of the b-th reflected light of different wavelength at the current deposition time point, A phase correction value generated for a preset reflection; Then the theoretical calculated phase difference of the first wavelength reflected light at the current deposition time point is obtained: And the theoretical calculated phase difference of the second wavelength reflected light at the current deposition time point ; Subtract the above two to eliminate the current deposition time point and the phase correction value generated by the reflection ,get: , are wavelengths of the first wavelength reflected light and the second wavelength reflected light respectively; After rearranging the above formula, we can get ; At the same time, the unknowns are eliminated by the ratio of the phase difference , and rearrange the above formula to: ; Then the theoretical calculation formula for the phase difference of reflected light of wavelengths other than the reflected light of two different wavelengths is: , are the wavelengths of the reflected light except for the two different wavelengths of reflected light; the unknown number The calculation formula is imported into the above formula and simplified to obtain: ; According to the calculation method of the phase difference of the reflected light of wavelengths other than the reflected light of two different wavelengths, the phase difference of the reflected light of other wavelengths is calculated in the same way, and the phase difference of the reflected light of the nanofilm corresponding to each wavelength is obtained by integrating them. .
5. The method for measuring the thickness of an electrochemically deposited nanofilm according to claim 4, characterized in that: In step 3, the preliminary calculated thickness of the nanofilm at the current deposition time point is calculated. The specific calculation formula is: Define the initial calculated thickness of the nanofilm at the current deposition time as an unknown , import the theoretical phase difference calculation formula of each wavelength reflected light at the current deposition time point ; is the theoretically calculated phase difference of the reflected light of the bth wavelength at the current deposition time point; The sum of squares of the phase errors of the multi-wavelength beam corresponding to the reflected light at the current deposition time point is calculated ; The sum of squares of phase errors of the multi-wavelength beam corresponding to the reflected light at the current deposition time point is calculated Derivation, get , d is the integral symbol; And let the above formula be zero, and then we get the equation: ; Expanding the above equation, we get ; The initial calculated thickness of all nanofilms at the current deposition time point Move the irrelevant terms to the right side of the equation, and you get The specific solution formula is as follows: 。 6. The method for measuring the thickness of an electrochemically deposited nanofilm according to claim 1, characterized in that: Real-time calculation of nanofilm thickness calculation error caused by environmental changes. The specific correction process is as follows: According to the sensors arranged in the interference device, the reaction activation energy B, solution concentration C and current density D of the interference device at the current deposition time point are obtained; The calculation error of nanofilm thickness caused by environmental changes is calculated from this , e is a natural constant, T0, C0 and D0 are the initial temperature, initial solution concentration and initial current density of the interference device respectively; R is the gas constant, is the initial thickness of the nanofilm under the corresponding initial conditions, is the set thickness correction factor.
7. The method for measuring the thickness of an electrochemically deposited nanofilm according to claim 6, characterized in that: The logic for obtaining the actual calculated thickness of the nanofilm at the current deposition time point is: The preliminary calculated thickness of the nanofilm at the current deposition time point Subtract the calculation error of nanofilm thickness caused by environmental changes , thereby obtaining the actual calculated thickness of the nanofilm at the current deposition time point.
8. A thickness measurement system for electrochemically deposited nanofilms, characterized in that: It is implemented based on a thickness measurement method of an electrochemically deposited nanofilm according to any one of claims 1 to 7, comprising a nanofilm deposition module, a thickness preliminary calculation module and a thickness error correction module, wherein the above modules are connected by wired and / or wireless connection to realize data transmission between the modules; Nanofilm deposition module: A nanofilm is formed on an electrode substrate by electrochemical deposition technology. Three light sources with different wavelengths are coupled to an interference device through optical fibers to form a multi-wavelength beam that simultaneously irradiates the surface of the nanofilm formed during the electrochemical deposition process. Each wavelength beam is reflected on the surface of the nanofilm and interferes with the reference beam, generating interference fringes of reflected light of each wavelength. Preliminary thickness calculation module: collects the phase of the interference fringes of the reflected light of each wavelength of the nano film at the current deposition time point through the spectrometer, and calculates the preliminary calculated thickness of the nano film at the current deposition time point based on the phase; Thickness error correction module: Real-time calculation of the nanofilm thickness calculation error caused by environmental changes, and then obtain the actual calculated thickness of the nanofilm at the current deposition time point, and output it to the display device.