Ion implantation machine implant abnormality repair system, method and electronic equipment

Abstract

The present application provides an ion implanter injection abnormality repair system, method and electronic device, which are applied to the technical field of control or regulation system, and to ion implanter equipment. The system includes an acquisition module, a logic control module, and a motion control module, and the motion control module includes a motor that carries a wafer. By collecting the ion beam voltage change of the ion implanter equipment, the motor motion coordinates, the ion implanter direction, and the injection dose and other injection parameters, when the ion beam voltage change shows an abnormal voltage, the ion beam is stopped, and different control instructions are sent to the motion module to move the wafer from the motor motion coordinate position corresponding to the abnormal voltage to a safe position. In the subsequent ion implantation process, the motor is controlled to move to the motion coordinate corresponding to the abnormal voltage, and the supplementary injection process is started to supplement the injection at the position where the abnormal voltage causes the injection failure, so as to realize the rapid repair of the abnormal ion implanter.

Description

Technical Field

[0001] The present application relates to the technical field of control or regulation systems, and in particular to an ion implantation abnormality repair system, method and electronic equipment. Background Art

[0002] The ion implantation process is a technology that plays a key role in the semiconductor manufacturing process and can transform insulators into conductive semiconductor materials. Among them, the ion implantation machine equipment (hereinafter referred to as the ion implanter) is a machine equipment commonly used in the industry to implement the above-mentioned ion implantation process. In the ion implanter, the dose control system is the core technology of the large-beam ion implanter. The dose control system is used to accurately control the energy, current and type of ions of the ion beam during the ion implantation process. In other words, the precision and accuracy of the dose control system will directly affect the process level of the wafers produced by the ion implanter, thereby affecting the manufacturing level of the entire semiconductor device.

[0003] However, during the ion implantation process, various unexpected abnormal conditions will inevitably cause the ion implantation process to be interrupted. How to perform supplementary implantation on wafers with implantation interruptions is an important research topic in ion implantation. Summary of the invention

[0004] In view of this, the embodiments of the present application provide an ion implanter implant abnormality repair system, method and electronic device to perform supplementary implantation on interrupted wafers, thereby recovering from the abnormality caused by the ion implanter.

[0005] In a first aspect, an embodiment of the present application provides an ion implantation abnormality repair system, the system is applied to an ion implantation machine, the system comprises: an acquisition module, a logic control module, and a motion control module, the motion control module comprises: a motor carrying a wafer, wherein:

[0006] The acquisition module is used to acquire the current injection parameter information of the ion implanter; wherein the injection parameter information includes: the motion coordinates of the motor, the direction of the ion implanter, the injection dose, and the change of the ion beam voltage;

[0007] The logic control module is used to detect whether an abnormal voltage occurs in the change of the ion beam voltage. If so, the ion beam of the ion implanter is controlled to be turned off, and a first motion control instruction is sent to the motion control module, wherein the first motion control instruction is used to control the motor to move to a safe position; or, after the motor moves to the safe position, the second motion control instruction is sent to the motion control module, wherein the second motion control instruction is used to control the motor to move from the safe position to a position to be supplemented for injection, wherein the position to be supplemented for injection is the motion coordinate of the motor when the abnormal voltage occurs;

[0008] The motion control module is configured to move according to the first motion control instruction or the second motion control instruction;

[0009] The logic control module is further used to determine the supplementary injection parameter information according to the injection parameter information after the motor moves to the position to be supplemented with injection, and to start the supplementary injection process based on the supplementary injection parameter information.

[0010] In a second aspect, an embodiment of the present application provides a method for repairing abnormal injection of an ion implanter, the method being applied to an ion implanter device, the method comprising:

[0011] Collecting the current implantation parameter information of the ion implanter, wherein the implantation parameter information includes: the motion coordinates of the motor carrying the wafer, the direction of the ion implanter, the implantation dose, and the change of the ion beam voltage;

[0012] Detect whether the ion beam voltage change situation has an abnormal voltage. If so, control the ion beam of the ion implanter to be turned off and generate a first motion control instruction, wherein the first motion control instruction is used to control the motor to move to a safe position; or, after the motor moves to the safe position, generate a second motion control instruction, wherein the second motion control instruction is used to control the motor to move from the safe position to a position to be supplemented for injection, wherein the position to be supplemented for injection is the motion coordinate of the motor when the abnormal voltage appears;

[0013] After the motor moves to the position to be supplemented with injection, supplementary injection parameter information is determined according to the injection parameter information, and a supplementary injection process is started based on the supplementary injection parameter information.

[0014] In a third aspect, an embodiment of the present application provides an electronic device, wherein the electronic device includes:

[0015] A processor and a memory for storing programs,

[0016] Wherein, the program includes instructions, and when the instructions are executed by the processor, the processor executes the ion implantation abnormality repair method of the second aspect.

[0017] In a fourth aspect, an embodiment of the present application provides a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to enable a computer to execute the ion implantation abnormality repair method described in the second aspect.

[0018] Beneficial effects of this application:

[0019] The embodiment of the present application provides an ion implanter injection abnormality repair system, method and electronic device, which are applied to ion implanter equipment. The system includes an acquisition module, a logic control module, and a motion control module, wherein the motion control module mainly includes a motor for carrying a wafer. The embodiment of the present application collects the ion beam voltage change of the ion implanter equipment, the motor motion coordinates, the ion implanter direction, and the injection dose and other injection parameters, and then stops the ion beam of the ion implanter equipment when an abnormal voltage appears in the ion beam voltage change, and moves the wafer from the motor motion coordinate position corresponding to the abnormal voltage to a safe position by sending different control instructions to the motion module, and then in the subsequent ion implantation process, after controlling the motor to move to the motion coordinate corresponding to the abnormal voltage, the supplementary injection process is started to supplement the injection at the position where the abnormal voltage causes the injection failure.

[0020] In this way, by selecting the embodiment of the present application, it is possible to perform ion supplementary injection into the wafer when the ion implanter equipment has an injection interruption, thereby repairing the abnormality caused by the ion implanter, reducing the production of low-quality wafers, and effectively saving material costs and production costs. In addition, the entire process does not require manual supplementary injection, which effectively improves the supplementary injection efficiency of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0022] Figure 1 A schematic diagram of a system architecture of an ion implantation abnormality repair system provided by an embodiment of the present application is shown;

[0023] Figure 2 A schematic diagram showing a working principle of ion implantation performed by an ion implanter device provided in an embodiment of the present application is shown;

[0024] Figure 3 A schematic diagram showing a principle of abnormal voltage generation provided by an embodiment of the present application is shown;

[0025] Figure 4 Another schematic diagram of the principle of abnormal voltage generation provided by an embodiment of the present application is shown;

[0026] Figure 5 Another system architecture schematic diagram of the ion implantation abnormality repair system provided by an embodiment of the present application is shown;

[0027] Figure 6 Another system architecture schematic diagram of the ion implantation abnormality repair system provided by an embodiment of the present application is shown;

[0028] Figure 7 A schematic diagram of a working principle flow of a logic control module provided in an embodiment of the present application is shown;

[0029] Figure 8 Another working principle flow chart of the logic control module provided in the embodiment of the present application is shown;

[0030] Fig. 9 A schematic diagram of a process of repairing an abnormality in an ion implantation machine provided in an embodiment of the present application is shown;

[0031] Fig.10 A structural block diagram of an exemplary electronic device that can be used to implement an embodiment of the present application is shown. DETAILED DESCRIPTION

[0032] The embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be construed as being limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not intended to limit the scope of protection of the present application.

[0033] It should be understood that the various steps described in the method implementation of the present application can be performed in different orders and / or performed in parallel. In addition, the method implementation may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this respect.

[0034] The term "including" and its variations used in this document are open inclusions, that is, "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments". Relevant definitions of other terms will be given in the description below. It should be noted that the concepts of "first", "second", etc. mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0035] It should be noted that the modifications of "one" and "plurality" mentioned in the present application are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0036] As described in the background technology, an ion implanter may cause wafer implantation interruption due to inevitable sudden abnormalities during operation, thereby affecting the quality of the produced wafers. In view of this, the present application provides an ion implanter implantation abnormality repair system, method and electronic equipment to stop the ion beam flow when the ion implanter implants abnormally, and perform supplementary injection at the abnormal injection position, so as to perform supplementary injection for the interrupted wafer, so as to realize recovery of the abnormality generated by the ion implanter.

[0037] In a first aspect, the present application provides an ion implantation abnormality repair system, which can be Figure 1 As shown, the ion implantation abnormality repair system includes: an acquisition module, a logic control module, and a motion control module. The motion control module includes: a motor that carries the wafer. Among them:

[0038] The acquisition module is used to acquire the current injection parameter information of the ion implanter; wherein the injection parameter information includes: the motion coordinates of the motor, the direction of the ion implanter, and the injection dose;

[0039] Logic control module for:

[0040] Detect whether there is an abnormal voltage in the ion beam voltage change. If so, control the ion beam of the ion implanter to shut down, and send a first motion control instruction to the motion control module, wherein the first motion control instruction is used to control the motor to move to a safe position; or,

[0041] After the motor moves to the safe position, a second motion control instruction is sent to the motion control module, and the second motion control instruction is used to control the motor to move from the safe position to the waiting injection position, and the waiting injection position is the motion coordinate of the motor when the abnormal voltage appears;

[0042] A motion control module, configured to move according to a first motion control instruction or a second motion control instruction;

[0043] The logic control module is also used to determine the supplementary injection parameter information according to the injection parameter information after the motor moves to the position to be supplemented with injection, and to start the supplementary injection process based on the supplementary injection parameter information.

[0044] By selecting the embodiments of the present application, it is possible to perform ion supplementary injection into the wafer when an injection interruption occurs in the ion implanter, especially when the injection interruption occurs due to abnormal voltage, thereby repairing the abnormality caused by the ion implanter, reducing the production of low-quality wafers, and effectively saving material costs and production costs. In addition, the entire process does not require manual supplementary injection, which effectively improves the supplementary injection efficiency of the wafer.

[0045] The following will describe in detail the various modules of the ion implantation abnormality repair system provided by the embodiment of the present application with reference to specific examples:

[0046] In an embodiment of the present application, an ion implanter is a key device in the semiconductor manufacturing process, and is used to implant ions into the surface of a material to change the physical properties of the material. Specifically, the ion implanter ionizes the impurities into ions, focuses them into an ion beam, accelerates them in an electric field to obtain extremely high performance, and then injects them into the corresponding wafer to change the physical properties of the wafer. In the actual ion input process, the specific position of the wafer is controlled by a motion control module, wherein the motion control module refers to the combination of the motor and the internal air bearing, and may also refer to the combination of the motor and the components connected to the motor. As a possible implementation method, it can be as follows Figure 2 As shown, a motor is used to carry the wafer and move it in the implantation chamber of the entire ion implanter according to the motor's motion trajectory to change the contact position between the ion beam and the wafer surface, thereby achieving uniform and stable ion implantation on the wafer surface. Each movement of the motor completes an implantation process.

[0047] Among them, since the ions will collide with the atoms in the semiconductor during the ion implantation process and gradually lose energy, they will eventually stay at a certain depth. The impurity concentration at this depth usually forms a peak value, which is the injection high position. The injection low position refers to the depth position where the impurity concentration in the semiconductor material begins to drop significantly after the ion implantation. Between the injection high position and the injection low position, the impurity concentration presents a Gaussian distribution or a similar distribution form.

[0048] In the embodiment of the present application, in order to determine whether the entire ion implantation process of the ion implanter is normal, the implantation process of the ion implanter is collected in real time through the acquisition module, and whether the implantation process is normal is determined based on the real-time collected data. Among them, the acquisition module can be a general term for various types of hardware and software with data acquisition capabilities, which can be a hardware sensor or a software data conversion algorithm.

[0049] As an implementation method, in an embodiment of the present application, the acquisition module specifically includes: an ion beam acquisition unit and a motor position determination unit. The injection parameters at the current moment are determined by the ion beam acquisition unit and the motor position determination unit, and the determined injection parameters are transmitted back to the logic control module. Among them, the motor position determination unit can be a positioning unit provided by the motor that carries the wafer, such as a positioning sensor. The ion beam acquisition unit can be a physical ion beam acquisition device, or it can be a logic processing unit at the software level that converts the size of the injected ion beam through the injection time. As an example, the ion beam acquisition unit can obtain the size of the ion beam by using a Faraday cup or other current measuring device. As another example, the ion beam acquisition unit is a specially designed ion beam software acquisition function module that can automatically calculate the required beam size based on the input process parameters, and calculate the currently injected dose based on the executed process parameters.

[0050] In an embodiment of the present application, the ion beam current collection unit can also be used to collect the change in ion beam current voltage to determine the stability of the ion beam current. As an implementation method, a voltage mutual inductance sensor or a Hall sensor is built into the ion beam current collection unit, and the voltage of the ion beam current is collected by the voltage mutual inductance sensor or the Hall sensor to determine the change in the voltage of the ion beam current at different times. As another implementation method, the change in the ion beam current voltage can be captured by a high-speed sampling device. For example, an oscilloscope or a high-speed data acquisition card or other equipment can be used for collection.

[0051] Under normal circumstances, the voltage value of the ion beam current should be stable. However, due to a sudden increase in current during the production process or a sudden change in the output voltage of the power output port of the ion implanter, the voltage value of the ion beam current may change instantaneously. The instantaneous change in the ion beam current is the abnormal voltage mentioned in the embodiments of the present application. The abnormal voltage may be a Glitch voltage, which is a transient voltage change, specifically a voltage mutation or interference that occurs in a short period of time. For example, Figure 3 As shown, the existence of the Glitch voltage will cause the injection height of the ion beam to deviate from the originally set injection height, thereby causing the injection quality to fail to meet the process parameter requirements.

[0052] In the embodiment of the present application, the voltage change of the ion beam is collected in real time by the acquisition module and transmitted back to the logic control module. The logic control module determines whether there is an abnormality in the current ion implantation process based on the received implantation parameters, especially the voltage change of the ion beam. Once an abnormal voltage appears in the voltage change of the ion beam, that is, a Glitch voltage appears, in order to reduce the impact of the Glitch voltage on the ion implantation, the logic control module will give priority to shutting down the ion beam. Then, the logic control module sends a first motion control instruction to the motion control module so that the motion control module controls the motor to move the wafer to a safe position according to the first motion control instruction. For details, please refer to Figure 4 , the motor moves the wafer to a safe position below.

[0053] In the embodiment of the present application, the logic control module is a device or component that performs logic calculations and generates control instructions. As an example, the logic control module can be a PLC (PLC: Programmable Logic Controller) logic controller. Among them, the PLC logic controller is a digital operation electronic system specially designed for industrial environments, which can process input signals according to programs written by users. In the embodiment of the present application, the logic control module can obtain the injection parameters sent by the acquisition module through its own input unit, and then perform data processing and logic control on the injection parameters according to the built-in program.

[0054] In an embodiment of the present application, when the logic control module determines that an abnormal voltage occurs in the voltage change of the ion beam, it determines that there is an abnormality in the injection position corresponding to the current moment, and determines the position coordinates of the motor corresponding to the moment when the abnormal voltage occurs as the injection position with the abnormality. The abnormal injection position is the position that needs to be supplemented with injection later. In the embodiment of the present application, the injection position with the abnormality is determined as the injection position to be supplemented. In some embodiments, if an abnormal voltage occurs, the logic control module generates a supplementary injection mark according to the injection position to be supplemented to mark that the position needs ion supplementary injection later. As an implementation method, the logic control module has a storage unit, and the logic control module can store interruption information such as the injection position with the abnormality, the moment when the abnormal voltage occurs, the supplementary injection mark corresponding to the injection position to be supplemented, and the injected dose corresponding to the injection position to be supplemented in its own storage unit. In the subsequent supplementary injection process after the abnormality occurs, the interruption information of the injection position to be supplemented is obtained for supplementary injection.

[0055] As a possible implementation, Figure 5As shown, the embodiment of the present application provides an ion implanter injection abnormality repair system that also includes: a data bus, specifically including a first data bus and a second data bus, wherein the logic control module is connected to the acquisition module and the motion control module through a data bus, and the specific logic control module is connected to the acquisition module through the first data bus, the logic control module obtains the injection parameters sent by the acquisition module through the first data bus, and the logic control module is connected to the motion control module through the second data bus, and the motion control instructions are sent to the motion control module through the second data bus. In an embodiment of the present application, the type of the data bus can be an Ethercat bus, that is, a data bus based on a real-time Ethernet communication protocol. In this way, high-speed signal transmission can be performed with the help of the characteristics of the rapid transmission of the Ethercat bus. In an embodiment of the present application, both the first motion control instruction and the second motion control instruction are data packets that adopt the Ethercat bus protocol for communication.

[0056] As an implementation method, Figure 6 As shown, the ion implantation abnormality repair system provided by the present application may also include a host computer, wherein the host computer is connected to the logic control module, and the logic control module is used to transmit the injection parameters collected by the acquisition module back to the host computer. Alternatively, the logic control module sends the interruption information to the host computer, and the host computer database records the interruption information, and the host computer can also display various data to the user through the host computer interface. As an example, Figure 7 As shown, when the logic control module determines that there is an abnormal voltage, it starts the injection interrupt information saving process, records the interrupt information in the memory of the controller, and / or sends the interrupt information to the host computer, and the database in the host computer records and stores the interrupt information.

[0057] In some possible embodiments, the logic control module is also used to determine whether there is a supplementary injection mark at the current position of the motor based on the motion coordinates of the motor sent in real time by the acquisition module. If there is a supplementary injection mark, the target interrupt information corresponding to the supplementary injection mark is obtained, and then the supplementary injection process is started according to the target interrupt information. If there is no supplementary injection mark, the normal injection process is started. In an embodiment of the present application, the ion injection process can be stopped immediately after the abnormal voltage exists, and the motor carries the wafer to a safe position. After the wafer is moved back to the position coordinates corresponding to the abnormal voltage according to the supplementary injection parameters calculated by the logic control module, the supplementary injection is performed for the first time for the supplementary injection to be injected.

[0058] Since the abnormal voltage is an instantaneous changing voltage and its occurrence time is extremely short, as another implementation method, the ion injection process may be stopped immediately after the abnormal voltage occurs, and the logic control module may send a third motion control instruction to the motion control module, instructing the motion control module to control the motor to continue the ion injection process of the subsequent non-injected positions. Subsequently, during the ion injection process, if the motor moves to the coordinate position corresponding to the original abnormal voltage, and it is determined that there is a supplementary injection mark at that position, it indicates that the wafer at that coordinate position needs supplementary injection. At this time, a supplementary injection process may be started according to the supplementary injection mark.

[0059] As an example, Figure 8 As shown, during the injection process, it is constantly determined whether there is a supplementary injection mark at the corresponding injection position. If not, the normal injection process is performed normally, and ion injection is performed according to the normal injection dose. If there is a supplementary injection mark, the supplementary injection process needs to be started, and the supplementary injection information needs to be read from the database. Specifically, the dose required for supplementary injection needs to be determined, and then the position corresponding to the supplementary injection mark is supplementally injected according to the determined supplementary injection dose.

[0060] Among them, the normal injection process calculates the corresponding specific parameters such as injection high position, injection low position, injection speed and injection dose according to the injection parameters sent by the host computer, and then waits for the host computer scheduling instruction to start the injection. When the ion beam current remains constant, the injection process is completed once each movement. When starting the supplementary injection process, the user can operate on the host computer to choose whether to supplement the injection immediately, and after moving the wafer to a safe position, supplementary injection is immediately performed according to the calculated supplementary injection parameters. Alternatively, you can also choose to exit the wafer, reload the wafer, and then start the supplementary injection process. During the supplementary injection process, supplementary injection is performed at the position where the supplementary injection mark is present.

[0061] In this way, there is no need to perform supplementary ion injection every time an abnormal voltage is found. Instead, during the normal injection process, ion supplementary injection can be performed at the location where supplementary injection is required. This can effectively reduce the time it takes for the motor to move to a safe position and then move back to the location to be injected, which is beneficial to improving the efficiency of supplementary injection.

[0062] In a second aspect, the present application provides a method for repairing an ion implantation anomaly, which is applied to any electronic device with an ion implantation anomaly repair function, including but not limited to a personal mobile terminal, a computer or a server. As an embodiment, the method is applied to an ion implantation device, such as Fig. 9 As shown, the method comprises the following steps:

[0063] S91, collecting the current implantation parameter information of the ion implanter, wherein the implantation parameter information includes: the motion coordinates of the motor carrying the wafer, the direction of the ion implanter, and the implantation dose;

[0064] S92, detecting whether the ion beam voltage change situation has an abnormal voltage, if so, controlling the ion beam of the ion implanter to be turned off, and generating a first motion control instruction, or generating a second motion control instruction after the motor moves to the safe position; wherein the first motion control instruction is used to control the motor to move to the safe position, and the second motion control instruction is used to control the motor to move from the safe position to a position to be supplemented for injection, and the position to be supplemented for injection is the motion coordinate of the motor when the abnormal voltage appears;

[0065] S93: after the motor moves to the position to be supplemented with injection, determine supplementary injection parameter information according to the injection parameter information, and start a supplementary injection process based on the supplementary injection parameter information.

[0066] By selecting the embodiment of the present application, when the ion beam voltage of the ion implanter device changes, the ion beam can be quickly stopped, and the position to be supplemented with injection can be calculated. After the motor moves to the corresponding supplementary injection position, the supplementary injection parameter information can be determined according to the injection information, and the supplementary injection process can be started according to the supplementary injection parameter information, thereby realizing ion supplementary injection of the position to be supplemented with injection at any time. The specific execution process of each step can refer to the description of the system of the first aspect, which will not be repeated here.

[0067] In some possible embodiments, the method further includes:

[0068] If the abnormal voltage occurs, a supplementary injection mark is generated according to the position to be supplemented and an interruption information is recorded, wherein the interruption information includes: the time when the abnormal voltage occurs, the position to be supplemented, the supplementary injection mark, and the injected dose;

[0069] Determine whether there is a supplementary injection mark at the position of the motor according to the motion coordinates of the motor collected in real time, and if there is a supplementary injection mark, obtain target interrupt information corresponding to the supplementary injection mark, and start the supplementary injection process according to the target interrupt information;

[0070] If there is no replenishment mark, start the normal injection process.

[0071] The names of the messages or information exchanged between multiple devices in the embodiments of the present application are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0072] In a third aspect, the exemplary embodiments of the present application further provide an electronic device, comprising: at least one processor; and a memory connected to the at least one processor in communication. The memory stores a computer program that can be executed by the at least one processor, and the computer program is used to enable the electronic device to perform a method according to an embodiment of the present application when executed by the at least one processor.

[0073] The exemplary embodiment of the present application further provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor of a computer, is used to cause the computer to perform a method according to an embodiment of the present application.

[0074] The exemplary embodiments of the present application further provide a computer program product, including a computer program, wherein when the computer program is executed by a processor of a computer, it is used to enable the computer to execute the method according to the embodiment of the present application.

[0075] refer to Fig.10 , the structural block diagram of the electronic device 1000 that can be used as the server or client of the present application will now be described, which is an example of a hardware device that can be applied to various aspects of the present application. The electronic device is intended to represent various forms of digital electronic computer equipment, such as laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices and other similar computing devices. The components shown herein, their connections and relationships, and their functions are only examples, and are not intended to limit the implementation of the present application described and / or required herein.

[0076] like Fig.10 As shown, the electronic device 1000 includes a computing unit 1001, which can perform various appropriate actions and processes according to a computer program stored in a ROM 1002 (wherein the ROM is a read-only memory) or a computer program loaded from a storage unit 1008 to a RAM 1003 (wherein the RAM is a random access memory). In the RAM 1003, various programs and data required for the operation of the electronic device 1000 can also be stored. The computing unit 1001, the ROM 1002, and the RAM 1003 are connected to each other via a bus 1004. An I / O interface 1005 (wherein the I / O interface is an input / output interface) is also connected to the bus 1004.

[0077] A plurality of components in the electronic device 1000 are connected to the I / O interface 1005, including: an input unit 1006, an output unit 1007, a storage unit 1008, and a communication unit 1009. The input unit 1006 may be any type of device capable of inputting information to the electronic device 1000, and the input unit 1006 may receive input digital or character information, and generate key signal inputs related to user settings and / or function control of the electronic device. The output unit 1007 may be any type of device capable of presenting information, and may include but is not limited to a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. The storage unit 1008 may include but is not limited to a disk, an optical disk. The communication unit 1009 allows the electronic device 1000 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks, and may include but is not limited to a modem, a network card, an infrared communication device, a wireless communication transceiver, and / or a chipset, such as a Bluetooth™ device, a WiFi device, a WiMax device, a cellular communication device, and / or the like.

[0078] The computing unit 1001 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the computing unit 1001 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, digital signal processors (DSPs), and any appropriate processors, controllers, microcontrollers, etc. The computing unit 1001 performs the various methods and processes described above. For example, in some embodiments, the aforementioned ion implantation abnormality repair method may be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as a storage unit 1008. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 1000 via the ROM 1002 and / or the communication unit 1009. In some embodiments, the computing unit 1001 may be configured to perform the aforementioned ion implantation abnormality repair method by any other appropriate means (e.g., by means of firmware).

[0079] The program code for implementing the method of the present application can be written in any combination of one or more programming languages. These program codes can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that the program code, when executed by the processor or controller, implements the functions / operations specified in the flow chart and / or block diagram. The program code can be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0080] In the context of the present application, a machine-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or device, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0081] As used herein, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, apparatus, and / or device (e.g., disk, optical disk, memory, programmable logic device (PLD)) for providing machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal for providing machine instructions and / or data to a programmable processor.

[0082] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the computer. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0083] The systems and techniques described herein may be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0084] A computer system may include clients and servers. Clients and servers are generally remote from each other and usually interact through a communication network. The relationship of client and server is generated by computer programs running on respective computers and having a client-server relationship to each other.

Claims

1. An ion implantation abnormality repair system, characterized in that: The system is applied to ion implantation equipment, and the system includes: an acquisition module, a logic control module, and a motion control module. The motion control module includes: a motor for carrying a wafer, and the logic control module is a PLC programmable logic controller, wherein: The acquisition module is used to acquire the injection parameter information of the ion implanter at the current moment; wherein the injection parameter information includes: the motion coordinates of the motor, the direction of the ion implanter, the injection dose, and the change of the ion beam voltage; The logic control module is used for: Detect whether the ion beam voltage change has abnormal voltage, if so, control the ion beam of the ion implanter to be turned off, and send a first motion control instruction to the motion control module, wherein the first motion control instruction is used to control the motor to move to a safe position; or After the motor moves to the safe position, a second motion control instruction is sent to the motion control module, wherein the second motion control instruction is used to control the motor to move from the safe position to a waiting injection position, and the waiting injection position is the motion coordinate of the motor when the abnormal voltage appears; The motion control module is configured to move according to the first motion control instruction or the second motion control instruction; The logic control module is further configured to determine the supplementary injection parameter information according to the injection parameter information after the motor moves to the position to be supplemented with injection, and start the supplementary injection process based on the supplementary injection parameter information; The logic control module is also used for: If the abnormal voltage occurs, a supplementary injection mark is generated according to the position to be supplemented and an interruption information is recorded, wherein the interruption information includes: the time when the abnormal voltage occurs, the position to be supplemented, the supplementary injection mark, and the injected dose; According to the motion coordinates of the motor sent in real time by the acquisition module, determine whether there is a supplementary injection mark at the position of the motor. If there is a supplementary injection mark, obtain the target interrupt information corresponding to the supplementary injection mark, and start the supplementary injection process according to the target interrupt information.

2. The system according to claim 1, characterized in that The system further includes: a first data bus and a second data bus. The logic control module acquires the data sent by the acquisition module through the first data bus, and sends motion control instructions to the motion control module through the second data bus.

3. The system according to claim 1, characterized in that The system further comprises: a host computer, the logic control module is connected to the host computer, and the logic control module is further used to send the interrupt information to the host computer.

4. The system according to claim 1, characterized in that The logic control module is also used to start the normal injection process if there is no supplementary injection mark.

5. A method for repairing abnormal implantation of an ion implanter, characterized in that: The method is applied to ion implantation equipment, and the method comprises: The current moment of the implantation parameter information of the ion implanter is collected by the acquisition module; wherein the implantation parameter information includes: the motion coordinates of the motor carrying the wafer, the direction of the ion implanter, the implantation dose, and the change of the ion beam voltage; A PLC programmable logic controller is used to detect whether an abnormal voltage occurs in the ion beam voltage change. If an abnormal voltage occurs, the ion beam of the ion implanter is controlled to be turned off, and a first motion control instruction is generated, wherein the first motion control instruction is used to control the motor to move to a safe position; or, after the motor moves to the safe position, a second motion control instruction is generated, wherein the second motion control instruction is used to control the motor to move from the safe position to a position to be supplemented with injection, wherein the position to be supplemented with injection is the motion coordinate of the motor at the time when the abnormal voltage occurs; after the motor moves to the position to be supplemented with injection, supplementary injection parameter information is determined according to the injection parameter information, and a supplementary injection process is started based on the supplementary injection parameter information; If the abnormal voltage occurs, the PLC programmable logic controller is used to generate a supplementary injection mark according to the position to be supplemented and to record interruption information, wherein the interruption information includes: the time when the abnormal voltage occurs, the position to be supplemented, the supplementary injection mark, and the injected dose; According to the motion coordinates of the motor sent in real time by the acquisition module, determine whether there is a supplementary injection mark at the position of the motor. If there is a supplementary injection mark, obtain the target interrupt information corresponding to the supplementary injection mark, and start the supplementary injection process according to the target interrupt information.

6. The method according to claim 5, characterized in that The method further comprises: If the abnormal voltage occurs, a supplementary injection mark is generated according to the position to be supplemented and an interruption information is recorded, wherein the interruption information includes: the time when the abnormal voltage occurs, the position to be supplemented, the supplementary injection mark, and the injected dose; Determine whether there is a supplementary injection mark at the position of the motor according to the motion coordinates of the motor collected in real time, and if there is a supplementary injection mark, obtain target interrupt information corresponding to the supplementary injection mark, and start the supplementary injection process according to the target interrupt information; If there is no replenishment mark, start the normal injection process.

7. An electronic device, characterized in that: The electronic device comprises: A processor and a memory for storing programs; The program includes instructions, which, when executed by the processor, cause the processor to perform the method according to any one of claims 5-6.

8. A non-transitory computer-readable storage medium storing computer instructions, characterized in that: The computer instructions are used to make a computer execute the method according to any one of claims 5-6.

Images