Hybrid power module based on Si IGBT and SiC MOSFET and manufacturing method

Abstract

The invention provides a hybrid power module based on a Si IGBT and a SiC MOSFET and a manufacturing method, the hybrid power module comprises a half-bridge structure formed by a Si IGBT chip and a SiC MOSFET chip, and each bridge arm of the half-bridge structure is formed by connecting the Si IGBT chip and the SiC MOSFET chip in parallel and reversely connecting the Si IGBT chip and the SiC MOSFET chip in parallel with a diode; the copper-clad ceramic substrate is used for carrying the half-bridge structure, and the copper-clad ceramic substrate is connected with a power terminal and a signal terminal; the heat dissipation substrate is attached to the copper-clad ceramic substrate; and the packaging shell is matched with the heat dissipation substrate to seal and package the copper-clad ceramic substrate, and the power terminals are integrated on the packaging shell. According to the hybrid power module, the junction temperature difference between the Si IGBT chip and the SiC MOSFET chip can be reduced, the risk that a bonding wire and a welding layer of the SiC MOSFET chip fail due to long-term high temperature and thermal stress is reduced, and the reliability of the hybrid power module is improved.

Description

Technical Field

[0001] The present invention relates to the field of power electronics, and in particular to a hybrid power module based on Si IGBT and SiC MOSFET and a manufacturing method thereof. Background Art

[0002] As the core device in power electronic converters, power semiconductor devices have been widely used in new energy system inverters, battery management, electric drive systems, frequency converters and other fields. Si IGBT-SiC MOSFET hybrid modules can combine the high current carrying capacity of IGBT and the high frequency and high efficiency characteristics of SiC MOSFET to achieve complementary advantages of the two devices. At the same time, compared with IGBT modules, the switching loss is lower, and compared with the full SiC solution, the cost is lower, which can achieve a compromise between performance and cost. Packaging power chips into hybrid power modules can reduce parasitic parameters and optimize thermal management, while simplifying system design and layout and improving system reliability. However, the Si IGBT and SiC MOSFET chips in the hybrid power module generate different heat due to the different currents they carry. In addition, the difference in thermal resistance caused by different chip sizes further causes different chip junction temperatures, and even causes the SiC MOSFET junction temperature to exceed its limit junction temperature, affecting the long-term reliability of the module. Summary of the invention

[0003] In view of the above problems existing in the prior art, the present invention proposes a hybrid power module based on Si IGBT and SiC MOSFET and a manufacturing method, which mainly solves the problem of poor reliability of existing devices.

[0004] In order to achieve the above purpose and other purposes, the technical solution adopted by the present invention is as follows.

[0005] The present application provides a hybrid power module based on Si IGBT and SiC MOSFET, comprising: a half-bridge structure composed of a Si IGBT chip and a SiC MOSFET chip, wherein each bridge arm of the half-bridge structure is composed of a Si IGBT chip and a SiC MOSFET chip connected in parallel and a diode connected in reverse parallel; a copper-clad ceramic substrate, which is used to carry the half-bridge structure, and the copper-clad ceramic substrate is connected to a power terminal and a signal terminal; a heat dissipation substrate, which is bonded to the copper-clad ceramic substrate; a plate-fin structure is provided on the side of the heat dissipation substrate away from the copper-clad ceramic substrate for heat dissipation, and the plate-fin structure is directly opposite to the position where the SiC MOSFET chip is located; a packaging shell, which cooperates with the heat dissipation substrate to seal and package the copper-clad ceramic substrate, wherein the power terminal is integrated on the packaging shell.

[0006] In one embodiment, the SiC MOSFET chip is connected in series with a shunt resistor, and the operating state of the corresponding chip is determined by detecting the voltage across the shunt resistor.

[0007] In one embodiment, two ends of the shunt resistor are led out through the signal terminal for current detection.

[0008] In one embodiment, in a working state, the current flow direction of the power terminal is perpendicular to the arrangement direction of the Si IGBT chip and the SiCMOSFET chip, so as to shorten the length of the commutation loop.

[0009] In one embodiment, the plate-fin structure includes a wave shape, and a cylindrical pin fin is further provided on the side of the heat dissipation substrate away from the copper-clad ceramic substrate for heat dissipation, and the cylindrical pin fin is directly opposite to the location of the Si IGBT chip.

[0010] In one embodiment, the packaging shell and the heat dissipation substrate are fixed by rivets and screws.

[0011] In one embodiment, the power terminal is connected to the copper-clad ceramic substrate by an ultrasonic welding process.

[0012] The present application also proposes a manufacturing method of the hybrid power module based on Si IGBT and SiC MOSFET, comprising: welding a power chip and a shunt resistor on a copper-clad ceramic substrate, and establishing a connection through bonding wires; welding the copper-clad ceramic substrate on a heat dissipation substrate; welding a signal terminal on the copper-clad ceramic substrate through a tool; connecting the packaging shell to the heat dissipation substrate through a sealant, and fixing them through screws and rivets; interconnecting the power terminal with the copper-clad ceramic substrate through ultrasonic welding; injecting and curing the potting glue, and then covering the cover plate to complete the sealed package.

[0013] As described above, the hybrid power module based on Si IGBT and SiC MOSFET and the manufacturing method thereof proposed in the present invention have the following beneficial effects.

[0014] The present application increases the heat dissipation contact area at the corresponding position of the SiC MOSFET chip through the plate-fin structure, which can more effectively dissipate the heat in a timely manner, thereby reducing the junction temperature of the SiC MOSFET chip, narrowing the junction temperature difference between the Si IGBT chip and the SiC MOSFET chip, and reducing the risk of failure of the bonding wire and solder layer of the SiC MOSFET chip due to long-term high temperature and thermal stress, thereby improving the reliability of the hybrid power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Schematic diagram of the existing hybrid full-bridge module structure.

[0016] Figure 2 It is a schematic diagram of the double-sided heat dissipation packaging structure of an existing hybrid power module.

[0017] Figure 3 Schematic diagram of the structure of a hybrid power module based on Si IGBT and SiC MOSFET in one embodiment of the present application.

[0018] Figure 4 FIG. 1 is a schematic diagram of a circuit topology of a hybrid power module in an embodiment of the present application.

[0019] Figure 5 Schematic diagram of the structure of a hybrid power module provided with a shunt resistor in an embodiment of the present application.

[0020] Figure 6 Schematic diagram of a commutation circuit in an embodiment of the present application.

[0021] Figure 7 FIG. 1 is a schematic diagram of parasitic parameter simulation results of a hybrid power module in an embodiment of the present application.

[0022] Figure 8 It is a schematic diagram of the existing cylindrical pin-fin heat dissipation structure.

[0023] Fig. 9 Schematic diagram of a heat dissipation structure in an embodiment of the present application.

[0024] Fig.10 FIG. 4 is a flow chart of a method for manufacturing a hybrid power module in an embodiment of the present application.

[0025] Description of Figure Numbers: 01-power terminal; 02-signal terminal; 03-package shell; 04-cover plate; 05-Si IGBT chip; 06-SiCMOSFET chip; P-positive power terminal; N-negative power terminal; U-AC power terminal; 07-shunt resistor; 08-diode; 09-cylindrical pin fin; 10-wavy plate fin; 11-heat dissipation substrate. DETAILED DESCRIPTION

[0026] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0027] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and thus the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0028] The inventors have found that: As the core device in power electronic converters, power semiconductor devices have been widely used in new energy system inverters, battery management, electric drive systems, frequency converters and other fields. Si IGBT-SiC MOSFET hybrid modules can combine the high current carrying capacity of IGBT and the high frequency and high efficiency characteristics of SiC MOSFET to achieve complementary advantages of the two devices. At the same time, compared with IGBT modules, the switching loss is lower, and compared with the full SiC solution, the cost is lower, which can achieve a compromise between performance and cost. Packaging power chips into hybrid power modules can reduce parasitic parameters and optimize thermal management, while simplifying system design and layout and improving system reliability. However, the Si IGBT and SiC MOSFET in the hybrid power module have different heat generation due to the different currents they carry. In addition, the difference in thermal resistance caused by different chip sizes further causes different chip junction temperatures, and even causes the SiC MOSFET junction temperature to exceed its limit junction temperature, affecting the long-term reliability of the module.

[0029] See also Figure 1 , Figure 1 The figure is a schematic diagram of the existing hybrid full-bridge module structure. The module has two usage modes, which solves the problems of large switching loss and low switching frequency of IGBT; at the same time, it solves the problem of large ripple of the inverter built by IGBT, and can obtain better module performance at a lower cost. However, the structure still has the following problems. First, the packaging design is still based on the ordinary module structure, and the power chip in the hybrid power module is not optimized for targeted packaging heat, which easily leads to a large difference in junction temperature between the module Si IGBT and SiC MOSFET, limiting the performance of the hybrid power module. The excessively high junction temperature of a device may cause thermal failure of the device or accelerate device aging, affecting the long-term reliability of the module. Secondly, the structure lacks comprehensive optimization of parasitic parameters, ignoring the imbalance of the commutation loop length between the power chips in the module. The SiC MOSFET in the shorter loop bears a larger current stress under short-circuit conditions due to the small parasitic inductance of the loop, and is more likely to fail due to overcurrent and overheating. Finally, the packaging structure cannot detect branch current, and real-time monitoring and protection of the hybrid power module are difficult.

[0030] See also Figure 2 , Figure 2The figure is a schematic diagram of the double-sided heat dissipation packaging structure of the existing hybrid power module. The packaging structure can reduce parasitic parameters and curb the influence of spatial distribution parameters on the high-speed switching performance of MOSFET. In addition, the packaging structure has double-sided heat dissipation capability, improves the power density of the module, and has the characteristics of compact space, simple and quick assembly, etc. However, the structure also has the following problems. First, the commutation loop is long, and there is still room for further optimization of parasitic parameters. Secondly, the structure is also unable to realize branch current detection. And there is no targeted optimization of the junction temperature difference between IGBT and MOSFET. Finally, the top metal plate of the structure is connected to the copper-clad ceramic substrate on the bottom metal plate through a plug and a motherboard, and the connection reliability is poor, especially under long-term vibration conditions, it is easy to fail due to large stress.

[0031] Therefore, it is necessary to detect the current borne by the Si IGBT and SiC MOSFET in the hybrid power module and optimize the heat dissipation structure to reduce the junction temperature difference between the Si IGBT and SiC MOSFET. The present application proposes a hybrid power module based on SiIGBT and SiC MOSFET. The technical solution of the present application is described in detail below in conjunction with specific embodiments.

[0032] See also Figure 3 , Figure 3 This is a structural schematic diagram of a hybrid power module based on Si IGBT and SiC MOSFET in an embodiment of the present application. The hybrid power module provided in the embodiment of the present application includes: a half-bridge structure composed of Si IGBT chip 05 and SiC MOSFET chip 06, each bridge arm of the half-bridge structure is composed of Si IGBT chip 05 and SiC MOSFET chip 06 in parallel and a diode in reverse parallel; a copper ceramic substrate, which is used to carry the half-bridge structure, and the copper-clad ceramic substrate connects the power terminal 01 and the signal terminal 02; a heat dissipation substrate 11, which is bonded to the copper-clad ceramic substrate, and the side of the heat dissipation substrate 11 away from the copper-clad ceramic substrate is provided with a plate-fin structure for heat dissipation, and the plate-fin structure is directly opposite to the position of the SiCMOSFET chip 06; a packaging shell 03, which cooperates with the heat dissipation substrate 11 to seal and package the copper-clad ceramic substrate, wherein the power terminal 01 is integrated on the packaging shell 03.

[0033] See also Figure 4 , Figure 4 FIG. 1 is a schematic diagram of a circuit topology of a hybrid power module in an embodiment of the present application. Figure 4The figure shows a half-bridge structure, in which each bridge arm is formed by connecting a silicon-based insulated gate bipolar transistor (Si IGBT) chip 05 with a large current capacity and a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) chip 06 with a small current capacity in parallel, and a large-capacity diode is connected in anti-parallel for freewheeling. The diode can be a silicon-based fast recovery diode (Si FRD) chip. Of course, other types of diodes can be selected as needed, and there is no restriction here. The hybrid power module connects the Si IGBT with a large current capacity in parallel with the SiC MOSFET with a small current capacity, which improves the current carrying capacity and reduces the cost compared with the pure SiC MOSFET device. At the same time, the zero voltage switching of the Si IGBT can be achieved through gate timing control, reducing the switching loss, making the switching speed of the hybrid power module better than the pure Si IGBT, and more suitable for high-frequency applications. In addition, the internal parallel structure improves system redundancy and can maintain forward and reverse currents when a single device fails in an open circuit. Therefore, the hybrid power module is superior to a single device in terms of current carrying capacity, switching loss, system redundancy and cost.

[0034] See also Figure 5 , Figure 5 This is a schematic diagram of the structure of a hybrid power module provided with a shunt resistor 07 in one embodiment of the present application. A SiC MOSFET chip 06 is connected in series with a shunt resistor 07, and the operating state of the corresponding chip is determined by detecting the voltage of the shunt resistor 07. Furthermore, the two ends of the shunt resistor 07 can be led out of the hybrid power module through the signal terminal 02 integrated on the packaging shell 03, so that an external detection device can measure the voltage signal at both ends of the shunt resistor 07 through the led-out signal terminal 02. Exemplarily, voltage detection can be performed by an oscilloscope. When the hybrid power module is working, the voltage signal at both ends of the shunt resistor 07 is detected by the oscilloscope, and divided by the resistance value of the shunt resistor 07, the current signal of the SiC MOSFET branch can be obtained.

[0035] In one embodiment, the power terminal 01 of the hybrid power module can be partially exposed from the packaging shell 03, and the total current waveform of the hybrid power module can be obtained by measuring the current flowing through the power terminal 01, and the current signal of the Si IGBT branch can be obtained by subtracting the current signal of the SiC MOSFET branch from it on a multi-channel oscilloscope. Therefore, the hybrid power module proposed in this application can perform online detection of branch currents. Once the current waveform is abnormal, the hybrid power module can be protected by a protection circuit to prevent the hybrid power module from failing due to excessive current stress.

[0036] In one embodiment, in the working state, the current flow direction of the power terminal 01 is perpendicular to the arrangement direction of the Si IGBT chip 05 and the SiC MOSFET chip 06, which can shorten the length of the commutation loop. Figure 6 , Figure 6 This is a schematic diagram of a circulating current loop in one embodiment of the present application. The copper-clad ceramic substrate of the present application is connected with an AC power terminal U, a positive power terminal P and a negative power terminal N, wherein the positive power terminal P and the negative power terminal N are DC power terminals. The current flows in from the positive power terminal P of the module, flows from both sides of the copper-clad ceramic substrate to the upper bridge arm Si IGBT and SiC MOSFET, and then flows back from the negative power terminal N after passing through the FRD and SiC MOSFET of the lower bridge arm. Please refer to Figure 7 , Figure 7 The following is a schematic diagram of the simulation results of the parasitic parameters of the hybrid power module in an embodiment of the present application. Due to the short length of the commutation loop and the construction of the opposite current path, when the current flows in from the positive power terminal P and out from the negative power terminal, the current flows in the opposite direction, making the mutual inductance negative, offsetting part of the self-inductance of the conductor, so the parasitic inductance of the commutation loop is small, and the simulation result is only 10.8 nH. In the embodiment of the present application, the arrangement direction of the three chips in each bridge arm is perpendicular to the current flow from the positive power terminal P to the chip, so the commutation loop lengths of the SiIGBT chip 05 and the SiC MOSFET chip 06 are similar, and the difference in parasitic inductance is small, so the SiCMOSFET chip 06 will not face higher current overstress due to the difference in parasitic parameters between its loop and the Si IGBT chip 05, which is conducive to improving the long-term reliability of the hybrid power module.

[0037] See also Figure 8 , Figure 8The figure is a schematic diagram of the existing cylindrical pin-fin 09 heat dissipation structure. Under rated load current, the SiC MOSFET chip 06 in the hybrid power module has a higher on-state voltage drop due to its resistance characteristics, while the Si IGBT chip 05 exhibits a lower voltage drop under large load current due to the conductivity modulation effect. Therefore, the Si IGBT chip 05 will bear more current, but at this time, the current borne by the SiC MOSFET chip 06 is also higher than the current of a single chip in a pure SiC MOSFET module. Therefore, the conduction loss of the SiC MOSFET chip 06 in the hybrid power module is higher, and the corresponding heat generation is larger. In addition, the area of ​​a single SiC MOSFET chip 06 is much smaller than the area of ​​a single Si IGBT chip 05, which makes the contact area between the SiC MOSFET chip 06 and the copper-clad ceramic substrate smaller, the heat dissipation path is limited, and the heat cannot be effectively conducted away, resulting in low heat dissipation efficiency. Therefore, the thermal resistance of the SiC MOSFET chip 06 in the hybrid power module is higher than that of the Si IGBT chip 05. Adopting such Figure 8 As shown in the heat dissipation structure of the uniformly arranged cylindrical pin-fins 09, the heat dissipation conditions of the SiC MOSFET chip 06 and the Si IGBT chip 05 are basically the same. The junction temperature of the SiC MOSFET chip will be much higher than that of the Si IGBT chip 05. The bonding wires and solder layers of the SiC MOSFET chip 06 are more likely to fail due to long-term high temperature and thermal stress, and the reliability of the hybrid power module is reduced. Therefore, it is necessary to optimize the heat dissipation structure to reduce the junction temperature difference between the SiC MOSFET chip 06 and the Si IGBT chip 05.

[0038] Therefore, the side of the heat dissipation substrate 11 away from the copper-clad ceramic substrate is provided with cylindrical pin fins 09 and wavy plate fins 10 for heat dissipation, wherein the wavy plate fins 10 are provided at the corresponding position of the SiC MOSFET chip 06. Fig. 9 , Fig. 9 The figure is a schematic diagram of the heat dissipation structure in one embodiment of the present application. The cylindrical pin-fin 09 structure of the heat dissipation substrate 11 in the area directly below the SiC MOSFET chip 06 is replaced by a wavy plate-fin 10 structure. The surface area of ​​the wavy plate-fin 10 structure is larger than that of the cylindrical pin-fin 09 structure, and its contact area with cooling media such as air is larger, so it can more effectively dissipate heat in a timely manner, thereby reducing the junction temperature of the SiC MOSFET chip 06. The other areas are still cylindrical pin-fin 09 structures, and the heat dissipation effect remains basically unchanged. Therefore, the junction temperature of the IGBT chip changes little. The simulation results show that when liquid cooling is used for heat dissipation, even at a lower liquid flow rate, compared to using Figure 8In the hybrid power module with the conventional uniformly arranged cylindrical pin fin 09 heat dissipation structure shown, in the hybrid power module with the wavy plate fin 10-cylindrical pin fin 09 hybrid heat dissipation structure proposed in the present invention, under the premise that the junction temperature of the Si IGBT chip 05 and the junction temperature of the SiC MOSFET chip 06 are both reduced, the junction temperature difference between the two can also be reduced by 5%. In summary, the wavy plate fin 10-cylindrical pin fin 09 hybrid heat dissipation structure proposed in the present application can effectively reduce the junction temperature difference between chips, and is more suitable for hybrid power modules of Si IGBT and SiC MOSFET.

[0039] In one embodiment, the packaging shell 03 is fixed to the heat dissipation substrate 11 by rivets and screws. The rivets and screws are used to increase the connection strength between the packaging shell 03 and the heat dissipation substrate 11, thereby ensuring the reliability of the packaging structure.

[0040] In one embodiment, a cover plate 04 may be provided on the side of the packaging shell 03 facing away from the heat dissipation substrate 11, and a cavity for accommodating the copper-clad ceramic substrate is formed between the cover plate 04 and the packaging shell 03. After the copper-clad ceramic substrate is assembled into the cavity, the remaining space is filled with transparent silicone gel and then covered with the cover plate 04 to form a sealing structure, which can further improve the anti-vibration effect.

[0041] In one embodiment, the power terminal 01 is connected to the copper-clad ceramic substrate by an ultrasonic welding process.

[0042] The technical solution of the embodiment of the present application has the following effects: The hybrid power module of the present application has a shorter commutation loop length, and an opposite current path is constructed, so that the mutual inductance is negative, and thus the parasitic inductance of the commutation loop is small. The parasitic inductance between the PN terminals is only 10.8 nH through Ansys Q3D simulation. In addition, compared with the existing power modules, the arrangement direction of the three chips in each bridge arm of the present application is perpendicular to the current flow from the terminal P to the chip, so the commutation loop lengths of the Si IGBT chip 05 and the SiC MOSFET chip 06 are similar, and the difference in parasitic inductance is small. Therefore, the SiC MOSFET chip 06 will not face higher current overstress due to the difference in parasitic parameters between the loop and the Si IGBT chip 05, which is conducive to improving the long-term reliability of the hybrid power module. In the Si IGBT-SiC MOSFET hybrid power module of the present application, a shunt resistor 07 is connected in series with the SiC MOSFET branch, and the two ends of the shunt resistor 07 are led out through the signal terminal 02. Therefore, compared with the existing power modules, the hybrid power module proposed in the present application can monitor the branch current online. Once the current waveform is abnormal, the hybrid power module can be protected by the protection circuit to prevent the hybrid power module from failing due to excessive current stress. The present application proposes a wavy plate fin 10-cylindrical pin fin 09 hybrid heat dissipation structure. The cylindrical pin fin 09 structure of the heat dissipation substrate 11 in the area directly below the SiC MOSFET chip 06 is replaced by a wavy plate fin 10 structure. The surface area of ​​the wavy plate fin 10 structure is larger than that of the cylindrical pin fin 09 structure, and the contact area with the cooling medium such as air is larger, which can more effectively dissipate the heat in time, thereby reducing the junction temperature of the SiC MOSFET chip 06, while other areas are still cylindrical pin fin 09 structures, and the heat dissipation effect remains basically unchanged, so the junction temperature of the Si IGBT chip 05 changes less. The simulation results show that when liquid cooling is used, even at a lower liquid flow rate (0.1m / s), compared with the hybrid power module using the traditional uniformly arranged cylindrical pin-fin 09 heat dissipation structure, in the hybrid power module using the wavy plate fin 10-cylindrical pin-fin 09 hybrid heat dissipation structure proposed by the present invention, the junction temperature of the Si IGBT chip 05 is reduced by 1.26°C, and the junction temperature of the SiC MOSFET chip 06 is reduced by 3.04°C, and the junction temperature difference between the two can also be reduced by 5%. The wavy plate fin 10-cylindrical pin-fin 09 hybrid heat dissipation structure proposed in this application can effectively reduce the junction temperature difference between chips, reduce the risk of failure of the bonding wire and solder layer of the SiC MOSFET chip 06 due to long-term high temperature and thermal stress, improve the reliability of the hybrid power module, and is more suitable for Si IGBT-SiC MOSFET hybrid power modules. In the existing power module, the power terminal 01 and the shell are independent of each other, and the power terminal 01 and the copper-clad ceramic substrate are connected by solder.The copper-clad ceramic substrate on the top metal plate and the bottom metal plate is connected through a socket and a busbar, and the power terminal 01 is connected to the copper-clad ceramic substrate through a bonding wire. After the power terminal 01 is assembled with the DC busbar, the reliability of the above interconnection method is poor, especially under long-term vibration conditions, the solder layer and bonding wires that realize the interconnection between the power terminal 01 and the copper-clad ceramic substrate are prone to failure due to large stress. In the Si IGBT-SiC MOSFET hybrid power module structure proposed in this application, the packaging shell 03 and the heat dissipation substrate 11 are fixed by rivets and screws, the power terminal 01 is integrated on the packaging shell 03, and the power terminal 01 is connected to the copper-clad ceramic substrate by an ultrasonic welding process. The reliability of the connection is higher and it can better adapt to long-term vibration conditions.

[0043] See also Fig.10 , Fig.10 1 is a flow chart of a method for manufacturing a hybrid power module in an embodiment of the present application. In an embodiment, the present application also proposes a method for manufacturing a hybrid power module, the method comprising the following steps: Step S100, welding the power chip and the shunt resistor 07 on the copper-clad ceramic substrate, and establishing a connection through bonding wires; Step S110, welding the copper-clad ceramic substrate onto the heat dissipation substrate 11; Step S120, welding the signal terminal 02 onto the copper-clad ceramic substrate by using a tool; Step S130, connecting the packaging shell 03 to the heat dissipation substrate 11 by means of sealant, and fixing them by means of screws and rivets; Step S140, interconnecting the power terminal 01 and the copper-clad ceramic substrate by ultrasonic welding; Step S150, injecting potting glue and curing it, and then covering it with the cover plate 04 to complete the sealing package.

[0044] Specifically, first, the power chip, shunt resistor 07, and NTC resistor are welded to the copper-clad ceramic substrate through screen printing and reflow soldering process; secondly, the power chip and the copper-clad ceramic substrate are interconnected through wire bonding process; then, the copper-clad ceramic substrate is welded to the heat dissipation substrate 11 through screen printing and reflow soldering process; then, the signal terminal 02 is welded to the copper-clad ceramic substrate through tooling; then, the connection between the outer shell and the heat dissipation substrate 11 is completed through sealant, and screws and rivets are assembled for further reinforcement, and then the power terminal 01 and the copper-clad ceramic substrate are interconnected by ultrasonic welding process; finally, potting glue is injected for curing and the cover plate 04 is assembled.

[0045] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A hybrid power module based on Si IGBT and SiC MOSFET, characterized in that: include: A half-bridge structure composed of a Si IGBT chip and a SiC MOSFET chip, wherein each bridge arm of the half-bridge structure is composed of a SiIGBT chip and a SiC MOSFET chip connected in parallel and a diode connected in reverse parallel; A copper-clad ceramic substrate, which is used to carry the half-bridge structure, and the copper-clad ceramic substrate is connected to the power terminal and the signal terminal; A heat dissipation substrate, which is bonded to the copper-clad ceramic substrate; a plate-fin structure is provided on a side of the heat dissipation substrate away from the copper-clad ceramic substrate for heat dissipation, and the plate-fin structure is directly opposite to the location of the SiC MOSFET chip; A packaging shell cooperates with the heat dissipation substrate to seal and package the copper-clad ceramic substrate, wherein the power terminal is integrated on the packaging shell.

2. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: The SiC MOSFET chip is connected in series with a shunt resistor, and the operating state of the corresponding chip is determined by detecting the voltage across the shunt resistor.

3. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 2, characterized in that: The two ends of the shunt resistor are led out through the signal terminal to perform current detection.

4. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: In a working state, the current flow direction of the power terminal is perpendicular to the arrangement direction of the Si IGBT chip and the SiC MOSFET chip, so as to shorten the length of the commutation loop.

5. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: The plate-fin structure includes a wave shape, and a cylindrical pin fin is further provided on the side of the heat dissipation substrate away from the copper-clad ceramic substrate for heat dissipation, and the cylindrical pin fin is directly opposite to the position where the Si IGBT chip is located.

6. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: The packaging shell and the heat dissipation substrate are fixed by rivets and screws.

7. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: The power terminal is connected to the copper-clad ceramic substrate by an ultrasonic welding process.

8. A method for manufacturing a hybrid power module based on Si IGBT and SiC MOSFET according to any one of claims 1 to 7, characterized in that: include: The power chip and the shunt resistor are welded on the copper-clad ceramic substrate and connected through bonding wires; Welding the copper-clad ceramic substrate onto a heat dissipation substrate; Welding the signal terminal onto the copper-clad ceramic substrate by a tool; Connecting the packaging shell to the heat dissipation substrate by means of sealant and fixing them by means of screws and rivets; interconnecting the power terminal to the copper-clad ceramic substrate by ultrasonic welding; After the potting glue is injected and cured, the cover plate is put on to complete the sealing package.

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