Semiconductor laser device based on inclined grating and manufacturing method thereof

Abstract

The invention discloses a semiconductor laser device based on an inclined grating and a manufacturing method thereof, and the method comprises the steps: controlling the inclination angle of an optical waveguide grating through controlling the inclination angle of a waveguide in the manufacturing of the optical waveguide grating of a semiconductor laser, and forming the inclined grating composed of an inclined seed grating and an inclined sampling structure; a phase shift structure is introduced into an inclined grating, phase matching of a laser resonant cavity at the phase shift structure is achieved through a microstructure quasi-phase matching technology, and laser single-wavelength lasing output with a specific wavelength is formed by electrifying a single electrode. The laser light source provided by the invention has the characteristics of accurate wavelength control, simple structure, low power consumption, high integration level and the like.

Description

Technical Field

[0001] The present invention relates to the field of laser technology, and in particular to a semiconductor laser device based on a tilted grating and a manufacturing method thereof. Background Art

[0002] Distributed feedback (DFB) lasers with uniform Bragg gratings have been widely used in the fields of communication and sensing due to their advantages such as single longitudinal mode and low threshold. However, the fabrication of fine micro-nano structures in the grating region of DFB lasers relies heavily on high-precision lithography technology, such as phase shift regions and chirped gratings. Electron beam lithography provides a feasible method for these needs, but it also has problems such as splicing errors and long manufacturing time. In order to reduce the production cost of Bragg gratings and improve the accuracy of phase shift control, the reconstruction equivalent chirp (REC) technology was proposed, that is, the period of the sampled grating is designed to control the Bragg wavelength. This technology is a one-dimensional sampling structure processed by micron-scale lithography, and has been fully applied in the fields of multi-wavelength source DFB lasers, laser arrays, microwave photonics, etc. So far, there has been little research and application on the two-dimensional sampling structure of DFB lasers, which is an application field to be explored.

[0003] Compared with the traditional reconstruction equivalent chirp technology based on one-dimensional sampling structure, the two-dimensional scheme has better flexibility in optimizing wavelength selection performance, rather than just adjusting the sampling period on a one-dimensional scale. Although the design of two-dimensional sampled gratings based on MSQPM technology has been proposed for a long time, it has not been widely applied to the field of DFB lasers so far. Therefore, how to realize DFB lasers based on two-dimensional gratings is of great significance. The tilted Bragg grating is a typical two-dimensional structure, whose grating plane is at a certain angle to the longitudinal axis of the waveguide. It has been widely studied in the fields of polarizers, fiber lasers, optical sensors and mode converters. It is composed of a uniform Bragg grating and a two-dimensional sampling structure, namely a tilted sampled Bragg grating, is proposed to meet the requirements of changing the propagation path in photon integration. In order to meet the requirements for multi-wavelength lasers, partially tilted gratings and tilted sampling structure lasers with the same angle are realized. However, the tilted sampling grating in the middle part only plays the role of controlling the grating phase shift or period. In addition, this design scheme greatly limits the flexibility of the tilted sampling grating design, and its shortcomings will eventually be reflected in the threshold current. At the same time, with the development of photonic integration and silicon-based electrical technology, various requirements have been put forward for the design of on-chip light sources. However, the design of traditional DBF lasers based on equivalent reconstructed chirp only focuses on one-dimensional structures. Therefore, research on tilted structures needs to be further carried out. At present, there is still a lack of a light source based on tilted grating with high integration, simple structure and low power consumption. Summary of the invention

[0004] The purpose of the present invention is to provide a semiconductor laser device based on a tilted grating and a method for manufacturing the same, which can achieve precise wavelength control, has a simple structure, low power consumption and high integration.

[0005] To achieve the above purpose, the technical solution provided by the present invention is:

[0006] A semiconductor laser device based on a tilted grating, wherein the optical waveguide grating of the semiconductor laser is a tilted grating composed of a tilted seed grating and a tilted sampling structure; the tilted grating has a phase shift structure, and the phase shift structure is used to achieve phase matching of the laser resonant cavity through a microstructure quasi-phase matching technology.

[0007] The tilted seed grating of the tilted grating is tilted and has a uniform period, and the tilt angle is determined by the waveguide tilt angle; the tilt angle of the tilted grating is less than 7 degrees; and the lasing wavelength control and wavelength interval selection are achieved by controlling the equivalent period change of the tilted sampling structure.

[0008] The tilted grating contains multiple shadow gratings, one of which is used as a target equivalent grating; the target equivalent grating is made into a uniform grating whose grating vector direction is consistent with the light wave propagation through the microstructure quasi-phase matching technology, and the wave vector direction corresponding to the target equivalent grating is the same as the optical waveguide direction of the laser.

[0009] The semiconductor laser is stacked from bottom to top in sequence by a substrate, a buffer layer, a lower limiting layer, a multi-quantum well layer, an upper limiting layer, a grating layer, a buried layer, a corrosion barrier layer, a waveguide layer and a contact layer, and the grating layer is composed of a tilted grating.

[0010] The semiconductor laser uses a multi-quantum well layer as a gain medium; the tilted grating wavelength is located near the center of the gain bandwidth; the substrate is an n-type doped substrate, the lower confinement layer is a confinement layer composed of n-type doping and non-doping, and the multi-quantum well layer is an InGaAlAs multi-quantum well.

[0011] A method for manufacturing a semiconductor laser device based on a tilted grating comprises the following steps:

[0012] In manufacturing the optical waveguide grating of the semiconductor laser, the tilt angle of the optical waveguide grating is controlled by controlling the waveguide tilt angle to form a tilted grating composed of a tilted seed grating and a tilted sampling structure;

[0013] A phase shift structure is introduced into the tilted grating, and the phase of the laser resonant cavity at the phase shift structure is achieved through microstructure quasi-phase matching technology. A single-wavelength laser output of a specific wavelength is formed by energizing a single electrode.

[0014] The phase shift structure is introduced into the tilted grating, and the phase of the laser resonant cavity at the phase shift structure is matched by the microstructure quasi-phase matching technology, specifically:

[0015] The grating structure of the optical waveguide of the semiconductor laser is divided into two sections, and a phase shift structure is introduced between the two sections so that the phase shift structure is located in the middle of the grating area of ​​the tilted grating. The structural parameters of the phase shift structure are designed using microstructure quasi-phase matching technology so that the laser resonant cavity at the phase shift position reaches the phase matching condition and realizes stable single-mode output.

[0016] A shadow grating in the tilted grating is used as a target equivalent grating. The target equivalent grating is made to become a uniform grating whose grating vector direction is consistent with the propagation of light waves through a microstructure quasi-phase matching technology, and the wave vector direction corresponding to the target equivalent grating is the same as the optical waveguide direction of the laser. The refractive index distribution of the target equivalent grating is changed by controlling the sampling pattern and shape, and the tilted refractive index modulation period and intensity of the equivalent target grating are adjusted. The refractive index distribution of the equivalent target grating is obtained according to Fourier analysis.

[0017] The tilted sampling structure is based on a tilted seed grating and is designed using semiconductor photolithography technology to modulate the tilted refractive index. The formula is as follows:

[0018]

[0019] Where Δn represents the basic grating refractive index modulation, represents the spatial position of the sampling structure, C m Expressed as Fourier coefficients, m is the Fourier series; seed grating and sampling structure The vector satisfies and in and represents the unit direction vector, Λ0 represents the period of the seed grating, Λ S represents the period of the sampling structure, j, exp, and cc represent the imaginary part;

[0020] Positive first-order shadow grating Seed Raster With sampling structure The vector relationship is expressed as follows:

[0021]

[0022] The preparation of a semiconductor laser device specifically includes the following steps:

[0023] A buffer layer and a lower confinement layer are sequentially grown on a substrate by metal organic compound vapor deposition, a multi-quantum well layer is grown on the lower confinement layer, an upper confinement layer is grown on the multi-quantum well layer, and a tilted grating having a tilted seed grating and a tilted sampling structure is deposited on the upper confinement layer as a grating layer;

[0024] A phase shift structure is introduced into the tilted sampling grating of the tilted grating, and the tilt angle and sampling period of the tilted sampling grating introduced with the phase shift structure are controlled by a microstructure quasi-phase matching technology to achieve phase matching;

[0025] A buried layer is grown above the grating layer, and an corrosion barrier layer, a waveguide layer and a contact layer are sequentially grown on the buried layer.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] The present invention utilizes the reconstruction equivalent chirp technology combined with the microstructure quasi-phase matching technology (MSPQM) to produce a tilted grating with a phase shift structure, so that the laser resonant cavity at the phase shift structure achieves phase matching and obtains a stable single-wavelength laser output of a specific wavelength.

[0028] An inclined sampling structure is used to increase the bandgap width and Bragg wavelength group delay, enhance optical feedback, and reduce the threshold current of laser lasing; a phase shift structure is introduced in the center of the overall inclined grating to achieve stable lasing of a single wavelength at the phase shift position, avoid introducing high-order modes to increase losses, and ensure the normal operation of the laser.

[0029] The laser of the present invention adopts a tilted grating and tilted sampling structure, and the period and tilt angle of the tilted sampling structure are adjusted and adapted according to the tilt angle and period of the seed grating, so as to realize enhanced grating feedback, increase the bandgap width of the laser, and accurately control the lasing wavelength; the entire grating structure is divided into two sections, and a phase shift is introduced between the two sections. The grating structure between each section is the same, and the laser resonant cavity reaches a phase matching condition at the phase shift to realize single-mode output; a single laser adopts a single electrode power-on method, and each phase shift shares a laser resonant cavity to realize single-wavelength output.

[0030] The wavelength of each output light wave of the present invention can be controlled by the angle and period of the sampling structure, and the wavelength interval is designed using the microstructure quasi-phase matching technology; the threshold reduction and single-wavelength operation of the tilted grating laser can be achieved through a single laser, and the precise wavelength output of a single laser can be achieved, which can reduce the threshold of the laser and optimize the wavelength selection characteristics.

[0031] The present invention provides a laser light source with the characteristics of precise wavelength control, simple structure, low power consumption, high integration, etc., which provides another choice for the light source design of integrated optics. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1Schematic diagram of the phase matching condition of the semiconductor laser grating based on the tilted grating of the present invention, where K0 is the seed grating vector, K s is the vector of the sampling structure, α is the sampling inclination angle, β is the seed grating inclination angle, and G is the sampling grating vector.

[0033] Figure 2 This is a schematic diagram of the laser seed grating and sampling structure based on the tilted grating of the present invention.

[0034] Figure 3 It is a schematic diagram of the structure of a semiconductor laser based on a tilted grating according to the present invention.

[0035] Figure 4 401 is the actual spectrum diagram of the 5-channel laser in the embodiment, wherein 402 is the first wavelength lasing peak, 403 is the third wavelength lasing peak, 404 is the fourth wavelength lasing peak, and 405 is the fifth wavelength lasing peak. DETAILED DESCRIPTION

[0036] The above contents of the present invention are further described in detail below in the form of embodiments, but this should not be understood as the scope of the above subject matter of the present invention being limited to the following embodiments, and all technologies realized based on the above contents of the present invention belong to the scope of the present invention.

[0037] The present invention provides a semiconductor laser device based on a tilted grating, wherein the optical waveguide grating of the semiconductor laser is a tilted grating composed of a tilted seed grating and a tilted sampling structure; the tilted grating has a phase shift structure, and the phase shift structure is used to achieve phase matching of the laser resonant cavity through a microstructure quasi-phase matching technology.

[0038] The grating structure of the semiconductor laser of the present invention adopts a tilted grating, and the period and tilt angle of the tilted sampling structure are adjusted and adapted according to the tilt angle and period of the tilted seed grating, thereby achieving enhanced grating feedback, increasing the bandgap width of the laser, and accurately controlling the lasing wavelength.

[0039] The seed waveguide grating in the tilted grating is tilted and has a uniform period, the tilt angle is determined by the waveguide tilt angle, and the overall grating presents a uniform period and equal tilt angle in the laser cavity. Laser wavelength control and wavelength interval selection are achieved by controlling the equivalent period change of the tilted sampling structure.

[0040] In some embodiments, the tilt angle of the tilted grating is less than 7 degrees to be compatible with existing semiconductor laser processing technology. The present invention controls the angle of the equivalent tilted seed grating by controlling the waveguide tilt angle, thereby realizing the production of the tilted sampling grating using the existing tilted sampling structure processing technology.

[0041] The tilted grating contains multiple shadow gratings, one of which is used as a target equivalent grating; the target equivalent grating is made to become a uniform grating whose grating vector direction is consistent with the light wave propagation through a microstructure quasi-phase matching technology, so that the laser is equivalent to a distributed feedback (DFB) laser, and the wave vector direction corresponding to the target equivalent grating is the same as the optical waveguide direction of the laser, and a positive first or negative first order shadow grating can be selected as the target equivalent grating.

[0042] In some embodiments, the semiconductor laser is composed of a substrate, a buffer layer, a lower confinement layer, a multi-quantum well layer, an upper confinement layer, a grating layer, an InP layer, a corrosion barrier layer, a waveguide layer and a contact layer stacked from bottom to top, and the grating layer is composed of a tilted grating.

[0043] The quantum well layer as a gain medium includes the operating wavelength range of the semiconductor laser device based on the tilted grating, and the tilted grating wavelength is located near the center of the gain bandwidth to increase the output power.

[0044] The substrate is an n-type doped substrate, the lower confinement layer is a confinement layer composed of n-type doping and non-doping, and the multi-quantum well layer is an InGaAlAs multi-quantum well.

[0045] The microstructure quasi-phase matching technology and the reconstruction equivalent chirp technology are used to produce tilted gratings, reduce the threshold of the laser and optimize the wavelength selection characteristics, and increase the group delay of the grating structure to reduce the threshold current.

[0046] The present invention also provides a method for manufacturing a semiconductor laser device based on a tilted grating, comprising the following steps:

[0047] Manufacturing an optical waveguide grating of a semiconductor laser, controlling the tilt angle of the optical waveguide grating by controlling the waveguide tilt angle, and forming a tilted grating composed of a tilted seed grating and a tilted sampling structure;

[0048] A phase shift structure is introduced into the tilted grating, and the phase of the laser resonant cavity at the phase shift structure is achieved through microstructure quasi-phase matching technology. A single-wavelength laser output of a specific wavelength is formed by energizing a single electrode.

[0049] When the phase shift structure is introduced, the grating structure of the laser's optical waveguide is divided into two sections, and a phase shift structure is introduced in the center of the grating area between the two sections. The grating structures between the sections are the same, and the laser resonant cavity reaches the phase matching condition at the phase shift structure to achieve single-mode output. The presence of a phase shift structure in the laser enables stable single longitudinal mode laser output.

[0050] A shadow grating in the tilted grating is used as a target equivalent grating. The target equivalent grating is made to become a uniform grating whose grating vector direction is consistent with the propagation of light waves through a microstructure quasi-phase matching technology, and the wave vector direction corresponding to the target equivalent grating is the same as the optical waveguide direction of the laser. The refractive index distribution of the target equivalent grating is changed by controlling the sampling pattern and shape, and the tilted refractive index modulation period and intensity of the equivalent target grating are adjusted. The refractive index distribution of the equivalent target grating is obtained according to Fourier analysis.

[0051] The tilted sampling structure is based on the tilted seed grating and is designed using semiconductor lithography technology to modulate the tilted refractive index. The formula is as follows:

[0052]

[0053] Where Δn represents the basic grating refractive index modulation, represents the spatial position of the sampling structure, C m Expressed as Fourier coefficients, m is the Fourier series; seed grating and sampling structure The vector satisfies and in and represents the unit direction vector, Λ0 represents the period of the seed grating, Λ S represents the period of the sampling structure, j, exp, and cc represent the imaginary part;

[0054] Positive first-order shadow grating Seed Raster With sampling structure The vector relationship is expressed as follows:

[0055]

[0056] In some embodiments, preparing a semiconductor laser device specifically comprises the following steps:

[0057] A buffer layer and a lower confinement layer are sequentially grown on a substrate by metal organic compound vapor deposition, a multi-quantum well layer is grown on the lower confinement layer, an upper confinement layer is grown on the multi-quantum well layer, and a tilted grating having a tilted seed grating and a tilted sampling structure is deposited on the upper confinement layer as a grating layer;

[0058] A phase shift structure is introduced into the tilted sampling grating of the tilted grating, and the tilt angle and sampling period of the tilted sampling grating introduced with the phase shift structure are controlled by a microstructure quasi-phase matching technology to achieve phase matching;

[0059] An InP layer for burying the grating layer is grown above the grating layer, and an corrosion barrier layer, a waveguide layer and a contact layer are sequentially grown on the InP layer.

[0060] The present invention is based on microstructure quasi-phase matching (MSPQM) technology. In laser design, phase matching is achieved by controlling the inclination angle and sampling period of the sampling structure. A phase shift structure exists in the middle of the laser grating area to achieve laser output of a specific wavelength. A single laser uses a single electrode to power on, and phase shifts at various locations share a laser resonant cavity to achieve single-wavelength output.

[0061] The structural parameters of the tilted sampled grating of the present invention are designed by using microstructure quasi-phase matching technology, so that the wave vector direction corresponding to the target equivalent grating is the same as the optical waveguide direction of the laser, and the target equivalent grating is a uniform grating whose grating vector direction is consistent with the propagation of light waves. The laser based on the target equivalent grating is equivalent to an ordinary distributed feedback (DFB) laser. A phase shift structure is set in the middle of the grating area of ​​the tilted sampled grating, and the phase shift structure is realized by using the tilted sampled grating structure. In the grating layer, the phase shift structure in the center of the tilted grating structure can be realized by using the reconstruction equivalent chirp technology and microstructure quasi-phase matching technology of Chen Xiangfei et al., and the microstructure quasi-phase matching technology is used to achieve phase matching, so that the semiconductor laser device based on the tilted grating has a sampling structure with a specific tilted morphology and period, thereby realizing single-wavelength laser output.

[0062] The present invention utilizes an equivalent grating structure to realize the introduction of an equivalent phase shift in the center of the grating. The laser wavelength control depends on the design of the sampling structure angle and period, and can realize precise control of the laser wavelength. A single electrode structure can be used to realize carrier injection.

[0063] The present invention is further described in detail below in conjunction with specific embodiments:

[0064] Example 1

[0065] A semiconductor laser device based on a tilted grating, the grating phase matching condition of the tilted sampling grating design of a single laser is as follows Figure 1 shown.

[0066] The laser includes tilted grating and tilted sampling structures, such as Figure 2 , 3 As shown, there is a phase shift structure in the center of the grating area. The light source enhances the continuity within the forbidden band width of the inclined grating through the inclined sampling structure, and improves the group delay of the sampling grating corresponding to the working wavelength.

[0067] The laser uses an n-type doped substrate, on which an n-type doped InP buffer layer, an n-type doped confinement layer and an undoped confinement layer are sequentially grown by metal organic compound vapor deposition; the relevant confinement layers are used to confine the light field and bind carriers, after which an InGaAlAs multiple quantum well structure is grown.

[0068] A confinement layer is designed above the quantum well, and an InGaAsP grating layer is grown above the confinement layer. Its structure is a tilted grating superimposed on a tilted sampling structure. The equivalent uniform grating is designed using reconstruction equivalent chirp technology and microstructure quasi-phase matching technology, and its equivalent grating period is uniform.

[0069] A p-type InP layer is grown above the grating layer for burying, and a corrosion barrier layer, a waveguide layer and a contact layer are grown in sequence on the InP layer.

[0070] The microstructure quasi-phase matching technology is used to design and manufacture the tilted grating, so that the period and angle of the tilted sampling structure match the parameters of the tilted seed grating. A phase shift structure is introduced on the tilted grating, and the Bragg grating wavelength change of the overall laser is determined by the tilted seed grating angle and the tilted sampling structure angle, and changes at intervals of 1 degree to achieve different wavelength designs.

[0071] There are two types of tilted gratings: 3 degrees and 4 degrees. The tilted sampling structures are from 38 degrees to 42 degrees and from 46 degrees to 50 degrees respectively. A phase shift structure is introduced in the middle of the tilted sampling structure to realize tilted grating lasers of multiple wavelengths.

[0072] The test results of the above design embodiment are as follows: Figure 4 As shown, from the spectrum test, it can be judged that in actual use, 5 wavelengths can be lased separately, the channel spacing is uniform, the output optical power is stable, and the side mode suppression is relatively high. Therefore, it can be judged that the designed laser based on the tilted grating can be applied to the above-mentioned related application fields.

[0073] In summary, the present invention provides a laser design scheme based on a tilted grating, which adopts a tilted sampling structure to increase the bandgap width and the Bragg wavelength group delay, enhance optical feedback, and reduce the threshold current of laser lasing; introduces a phase shift structure in the center of the overall tilted grating to achieve stable lasing of a single wavelength at the phase shift position, avoids the introduction of high-order modes to increase losses, and ensures the normal operation of the laser.

[0074] The present invention finally realizes single-wavelength output of a single laser, with flexible structural design, low threshold current and high integration.

[0075] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Any technician familiar with the profession, without departing from the scope of the technical solution of the present invention, according to the technical essence of the present invention, any simple modification, equivalent replacement and improvement made to the above embodiment still falls within the protection scope of the technical solution of the present invention.

Claims

1. A semiconductor laser device based on a tilted grating, characterized in that: The optical waveguide grating of the semiconductor laser is a tilted grating composed of a tilted seed grating and a tilted sampling structure; the tilted grating has a phase shift structure, and the phase shift structure is used to achieve phase matching of the laser resonant cavity through a microstructure quasi-phase matching technology.

2. The semiconductor laser device based on tilted grating according to claim 1, characterized in that: The tilted seed grating of the tilted grating is tilted and has a uniform period, and the tilt angle is determined by the waveguide tilt angle; the tilt angle of the tilted grating is less than 7 degrees; and the lasing wavelength control and wavelength interval selection are achieved by controlling the equivalent period change of the tilted sampling structure.

3. The semiconductor laser device based on tilted grating according to claim 1, characterized in that: The tilted grating contains multiple shadow gratings, one of which is used as a target equivalent grating; the target equivalent grating is made into a uniform grating whose grating vector direction is consistent with the light wave propagation through the microstructure quasi-phase matching technology, and the wave vector direction corresponding to the target equivalent grating is the same as the optical waveguide direction of the laser.

4. The semiconductor laser device based on tilted grating according to claim 1, characterized in that: The semiconductor laser is stacked from bottom to top in sequence by a substrate, a buffer layer, a lower limiting layer, a multi-quantum well layer, an upper limiting layer, a grating layer, a buried layer, a corrosion barrier layer, a waveguide layer and a contact layer, and the grating layer is composed of a tilted grating.

5. The semiconductor laser device based on tilted grating according to claim 4, characterized in that: The semiconductor laser uses a multi-quantum well layer as a gain medium; the tilted grating wavelength is located near the center of the gain bandwidth; the substrate is an n-type doped substrate, the lower confinement layer is a confinement layer composed of n-type doping and non-doping, and the multi-quantum well layer is an InGaAlAs multi-quantum well.

6. A method for manufacturing a semiconductor laser device based on a tilted grating, characterized in that: The following steps are involved: In manufacturing the optical waveguide grating of the semiconductor laser, the tilt angle of the optical waveguide grating is controlled by controlling the waveguide tilt angle to form a tilted grating composed of a tilted seed grating and a tilted sampling structure; A phase shift structure is introduced into the tilted grating, and the phase of the laser resonant cavity at the phase shift structure is achieved through microstructure quasi-phase matching technology. A single-wavelength laser output of a specific wavelength is formed by energizing a single electrode.

7. The method for manufacturing a semiconductor laser device based on a tilted grating according to claim 6, characterized in that: The phase shift structure is introduced into the tilted grating, and the phase of the laser resonant cavity at the phase shift structure is matched by the microstructure quasi-phase matching technology, specifically: The grating structure of the optical waveguide of the semiconductor laser is divided into two sections, and a phase shift structure is introduced between the two sections so that the phase shift structure is located in the middle of the grating area of ​​the tilted grating. The structural parameters of the phase shift structure are designed using microstructure quasi-phase matching technology so that the laser resonant cavity at the phase shift position reaches the phase matching condition and realizes stable single-mode output.

8. The method for manufacturing a semiconductor laser device based on a tilted grating according to claim 6, characterized in that: A shadow grating in the tilted grating is used as a target equivalent grating. The target equivalent grating is made to become a uniform grating whose grating vector direction is consistent with the propagation of light waves through a microstructure quasi-phase matching technology, and the wave vector direction corresponding to the target equivalent grating is the same as the optical waveguide direction of the laser. The refractive index distribution of the target equivalent grating is changed by controlling the sampling pattern and shape, and the tilted refractive index modulation period and intensity of the equivalent target grating are adjusted. The refractive index distribution of the equivalent target grating is obtained according to Fourier analysis.

9. The method for manufacturing a semiconductor laser device based on a tilted grating according to claim 6, characterized in that: The tilted sampling structure is based on a tilted seed grating and is designed using semiconductor photolithography technology to modulate the tilted refractive index. The formula is as follows: Where Δn represents the basic grating refractive index modulation, represents the spatial position of the sampling structure, C m Expressed as Fourier coefficients, m is the Fourier series; seed grating and sampling structure The vector satisfies and in and represents the unit direction vector, Λ0 represents the period of the seed grating, Λ S represents the period of the sampling structure, j, exp, and cc represent the imaginary part; Positive first-order shadow grating Seed Raster With sampling structure The vector relationship is expressed as follows:

10. The method for manufacturing a semiconductor laser device based on a tilted grating according to claim 6, characterized in that: The specific steps include: A buffer layer and a lower confinement layer are sequentially grown on a substrate by metal organic compound vapor deposition, a multi-quantum well layer is grown on the lower confinement layer, an upper confinement layer is grown on the multi-quantum well layer, and a tilted grating having a tilted seed grating and a tilted sampling structure is deposited on the upper confinement layer as a grating layer; A phase shift structure is introduced into the tilted sampling grating of the tilted grating, and the tilt angle and sampling period of the tilted sampling grating introduced with the phase shift structure are controlled by a microstructure quasi-phase matching technology to achieve phase matching; A buried layer is grown above the grating layer, and an corrosion barrier layer, a waveguide layer and a contact layer are sequentially grown on the buried layer.

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