Impact-resistant photovoltaic ink material and preparation method thereof

Abstract

The invention discloses an anti-impact photovoltaic ink material and a preparation method thereof. The photovoltaic mechanism comprises a frame, glass printing ink, a battery and monocrystalline silicon, the glass printing ink is sprayed on the surface of the frame, the battery is arranged at the bottom of the frame, the monocrystalline silicon is arranged on the inner side of the frame, the monocrystalline silicon is electrically connected with the battery through a wire, and the glass printing ink is prepared through the following method. Frit and a color agent are mixed with glass pigment to be filled into a grinding three-roller machine, the grinding effect is achieved through mutual extrusion of the surfaces of three horizontal rollers and friction at different speeds, and the granularity of ground materials is adjusted by adjusting the size of gaps among the rollers by adjusting parallel hand wheel screws. Through the arrangement of the photovoltaic mechanism, the glass ink can be sprayed on the surface of the frame, the frame, the monocrystalline silicon and the battery are assembled in the frame, and the battery pack is electrically connected with the monocrystalline silicon through a wire.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic inks, and particularly to an impact-resistant photovoltaic ink material and a preparation method thereof. Background Art

[0002] A photovoltaic power generation system, abbreviated as PV, refers to a power generation system that directly converts solar radiant energy into electrical energy by using the photovoltaic effect of photovoltaic cells. In the comparative case, the publication number is CN105039909B. The present invention relates to a photovoltaic material and a preparation method thereof; in particular, to a selenium antimony sulfide thin film material and a preparation method thereof, belonging to the technical field of new energy material preparation. The chemical formula of the photovoltaic material described in the present invention is Sb2(SxSe1-x)3, where the value range of x is 0 < x < 1. The preparation method is as follows: First, a antimony sulfide pre-layer is prepared on a substrate by sputtering, and then selenization annealing is carried out under certain conditions to obtain a selenium antimony sulfide thin film material. The present invention first designs and proposes a method for preparing a selenium antimony sulfide semiconductor thin film material by selenization after sputtering an antimony sulfide pre-layer. The prepared selenium antimony sulfide thin film material has good crystallinity, controllable composition, high density of the thin film, and small volume expansion, avoiding problems such as difficult composition control, poor uniformity, and easy generation of unfavorable impurities in the process of preparing semiconductor thin film materials by existing methods. Moreover, this method has low requirements for equipment and is easy to industrialize, and can be widely promoted on a large scale in production.

[0003] However, in the implementation of related technologies, it is found that the above-mentioned photovoltaic material and its preparation method have the following problems. The method of preparing a selenium antimony sulfide semiconductor thin film material by selenization after sputtering an antimony sulfide pre-layer in the comparative case does not have specific processing equipment, and simply making the material have a high density cannot achieve the effect of resisting impact. The existing photovoltaic is composed of single crystal silicon inside the frame, and the frame cannot resist external impact and may deform and break, reducing the safety of photovoltaic use.

[0004] Therefore, it is necessary to design and transform the photovoltaic to effectively prevent the problem that the existing photovoltaic is composed of single crystal silicon inside the frame and the frame cannot resist external impact and may deform and break. Summary of the Invention

[0005] To solve the problems raised in the above background art, the purpose of the present invention is to provide an impact-resistant photovoltaic ink material and a preparation method thereof, which have the advantage of good impact resistance, and solve the problem that the existing photovoltaic is composed of single crystal silicon inside the frame and the frame cannot resist external impact and may deform and break.

[0006] To achieve the above purpose, the present invention provides the following technical solutions: An impact-resistant photovoltaic ink material and a preparation method thereof, including;

[0007] A photovoltaic mechanism;

[0008] The photovoltaic structure comprises a frame, glass ink, a battery and monocrystalline silicon, the surface of the frame is sprayed with glass ink, the bottom of the frame is provided with a battery, the inner side of the frame is provided with monocrystalline silicon, the monocrystalline silicon is electrically connected to the battery through a wire, and the glass ink is prepared by the following method;

[0009] The inside of the grinding three-roller mill is filled with glass pigment mixed with frit and colorant. The grinding effect is achieved by the mutual extrusion of the surfaces of the three horizontal rollers and the friction at different speeds. The particle size of the ground material is adjusted by adjusting the gap between the rollers by adjusting the parallel hand wheel screw. The obtained material is prepared and processed again by the following method;

[0010] The above-obtained materials are used for screen printing and screen washing. Screen printing is to stretch silk fabric, synthetic fiber fabric or metal screen on a screen frame, and use a manual paint film or photochemical plate making method to make a screen printing plate. The printing plate obtains a frame shape, and is heated and dried to keep the glass ink on the surface. The obtained frame is prepared and processed again by the following method;

[0011] The frame is sent into the drying equipment and sintered at 180°C for two hours. The sintered frame has glass ink on the surface for subsequent battery and monocrystalline silicon assembly.

[0012] As a preferred embodiment of the present invention, the single crystal silicon is processed by laser scribing to concentrate the laser energy in a tiny area in a very short time, so that the solid is sublimated and evaporated, and the full cutting process and grooving process belong to the laser ablation process technology to cut the single crystal silicon.

[0013] As a preferred embodiment of the present invention, the single crystal silicon is sliced ​​by laser to obtain multiple single crystal silicon for the next process, and the single crystal silicon is welded by series welding, and the series welding adopts infrared non-contact heating welding, and the welding temperature is controlled by closed-loop automatic control, which can be adjusted within the range of 0-300°C. The temperature control accuracy of the welding zone is <±10°C, so that multiple single crystal silicon can be series welded.

[0014] As a preferred embodiment of the present invention, the next process is carried out after the string welding is completed, and the lamination operation is carried out after the single crystal silicon layout is completed. The single crystal silicon is subjected to a molding processing method of combining multiple layers of the same or different materials as a whole under heating and pressure, and the inner layer single sheet, semi-cured sheet, and copper foil are stacked together and pressed at high temperature to form a multi-layer board. For example, a four-layer board requires an inner layer single sheet, two copper foils and two groups of semi-cured sheets to be pressed.

[0015] As a preferred embodiment of the present invention, the monocrystalline silicon is manually assembled inside the frame after lamination, and the battery is electrically connected to the photovoltaic panel through a wire, and then sent to the next process IV test.

[0016] As a preferred embodiment of the present invention, the IV test is performed by irradiating the assembled photovoltaic panel with a solar simulator to simulate sunlight onto the battery, and then the IV characteristics of the battery are tested with a digital source meter to obtain parameters such as open circuit voltage, short circuit current, fill factor, efficiency, series resistance, parallel resistance, etc. After the IV test is passed, it is sent to the next process for packaging.

[0017] As the preferred method of the present invention, the following steps are included:

[0018] S1; The user mixes glass pigment with frit and colorant and fills it into the interior of the three-roll grinding machine. The grinding effect is achieved by the mutual extrusion of the surfaces of the three horizontal rollers and the friction at different speeds. The particle size of the ground material is adjusted by adjusting the gap between the rollers by adjusting the parallel handwheel screw. The obtained material is screen printed and the screen plate is washed. Screen printing is to stretch silk fabric, synthetic fiber fabric or metal screen on the screen frame, and use manual engraving of paint film or photochemical plate making method to make the screen printing plate. The printing plate obtains the frame shape and is heated and dried to keep the glass ink on the surface. The obtained frame is sent to the drying equipment and sintered at 180°C for two hours. The sintered frame with glass ink on the surface is subsequently assembled with batteries and single crystal silicon to obtain an impact-resistant photovoltaic frame, and S2 is executed;

[0019] S2; The single crystal silicon is cut and processed by laser scribing 3 to concentrate the laser energy in a tiny area in a very short time, so that the solid is sublimated and evaporated. The full cutting process and the slotting process belong to the laser ablation process technology, which makes the single crystal silicon cut and processed. The single crystal silicon is cut and processed by laser scribing to obtain multiple single crystal silicon for the next process. The single crystal silicon is welded by string welding, and the string welding adopts infrared non-contact heating welding. The welding temperature is controlled by closed-loop automatic control and can be adjusted within the range of 0-300℃. The temperature control accuracy of the welding area is <±10℃, so that multiple single crystal silicons are completed in string welding. After the string welding is completed, the next process is carried out. After the single crystal silicon layout is completed, the lamination operation is carried out. The single crystal silicon is heated and pressurized to form multiple layers of the same or different materials. The method is a combined overall forming and processing method, in which the inner single sheet, the semi-cured sheet and the copper foil are stacked together and pressed at high temperature to form a multi-layer board. For example, a four-layer board requires an inner single sheet, two copper foils and two sets of semi-cured sheets to be pressed. After the lamination, the monocrystalline silicon is manually assembled inside the frame and the battery is electrically connected to the photovoltaic panel through a wire, and then sent to the next process IV test. The IV test is carried out by irradiating the assembled photovoltaic panel with a solar simulator to simulate sunlight onto the battery, and then using a digital source meter to test the IV characteristics of the battery to obtain parameters such as open circuit voltage, short circuit current, fill factor, efficiency, series resistance, parallel resistance, etc. After the IV test is passed, it is sent to the next process for packaging, debugging is completed, and packaging and transportation are carried out.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] 1. The present invention can spray glass ink on the surface of the frame through the arrangement of the photovoltaic mechanism, and assemble the frame, the monocrystalline silicon and the battery pack inside, and the battery pack is electrically connected to the monocrystalline silicon through a wire. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the structure of the present invention;

[0023] Figure 2 For the present invention Figure 1 Medium frame frame diagram.

[0024] In the figure: 1. Photovoltaic structure; 101. Frame; 102. Glass ink; 103. Battery; 104. Monocrystalline silicon; 2. Grinding three-roller machine; 3. Laser scribing; 4. String welding; 5. Lamination; 6. IV test. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] like Figure 1 to Figure 2 As shown, the present invention provides an impact-resistant photovoltaic ink material and a preparation method thereof, comprising:

[0027] Photovoltaic mechanism 1;

[0028] The photovoltaic mechanism 1 includes a frame 101, a glass ink 102, a battery 103 and a single crystal silicon 104. The surface of the frame 101 is sprayed with the glass ink 102, the battery 103 is arranged at the bottom of the frame 101, and the inner side of the frame 101 is arranged with the single crystal silicon 104. The single crystal silicon 104 is electrically connected to the battery 103 through a wire. The glass ink 102 is prepared by the following method;

[0029] The glass pigment mixed with the frit and the colorant is filled into the interior of the grinding three-roller machine 2, and the grinding effect is achieved by the mutual extrusion of the surfaces of the three horizontal rollers and the friction at different speeds. The particle size of the ground material is adjusted by adjusting the gap between the rollers by adjusting the parallel hand wheel screw. The obtained material is prepared and processed again by the following method;

[0030] The above-obtained material is used for screen printing and screen washing. Screen printing is to stretch silk fabric, synthetic fiber fabric or metal screen on a screen frame, and use a manual paint film or photochemical plate making method to make a screen printing plate. The printing plate obtains the shape of the frame 101, and is heated and dried to keep the glass ink 102 on the surface. The obtained frame 101 is further prepared and processed by the following method;

[0031] The frame 101 is sent to a drying device and sintered at 180° C. for two hours. The sintered frame 101 has glass ink 102 on the surface for subsequent assembly of the battery 103 and the single crystal silicon 104 .

[0032] refer to Figure 2 The single crystal silicon 104 is processed by laser scribing 3, which concentrates the laser energy in a tiny area in a very short time, so that the solid is sublimated and evaporated, and the full cutting process and the grooving process belong to the laser ablation process technology, so that the single crystal silicon 104 is cut.

[0033] As a technical optimization solution of the present invention, the single crystal silicon 104 can be processed by setting the laser scribing 3, thereby avoiding the single crystal silicon 104 being unable to be cut and installed inside the frame 101.

[0034] refer to Figure 2 The single crystal silicon 104 is sliced ​​by laser 3 to obtain a plurality of single crystal silicon 104 for the next process. The single crystal silicon 104 is welded by string welding 4, and the string welding 4 adopts infrared non-contact heating welding, and the welding temperature is controlled by closed-loop automatic control, which can be adjusted within the range of 0-300°C. The temperature control accuracy of the welding area is <±10°C, so that the plurality of single crystal silicon 104 can complete the string welding 4.

[0035] As a technical optimization solution of the present invention, through the setting of the series welding 4, multiple single crystal silicon 104 can be welded to each other, thereby avoiding a single single crystal silicon 104 from being unable to work.

[0036] refer to Figure 2 After the string welding 4 is completed, the next process is carried out. After the layout of the single crystal silicon 104 is completed, the lamination 5 operation is carried out. The single crystal silicon 104 is a molding processing method that combines multiple layers of the same or different materials under heating and pressure. The inner layer single sheet, prepreg, and copper foil are stacked together and pressed at high temperature to form a multi-layer board. For example, a four-layer board requires an inner layer single sheet, two copper foils and two groups of prepregs to be pressed.

[0037] As a technical optimization solution of the present invention, by setting the lamination 5, multiple layers of single crystal silicon 104 can be pressed together, thereby avoiding the single crystal silicon 104 being too thick to be installed and debugged.

[0038] refer to Figure 2After the monocrystalline silicon 104 is laminated 5, it is manually assembled inside the frame 101 and the battery 103 is electrically connected to the photovoltaic panel through wires and sent to the next process IV test 6.

[0039] As a technical optimization solution of the present invention, the setting of IV test 6 can assist in the electrical testing of the monocrystalline silicon 104 and the battery 103, thereby avoiding the inability to store and convert electrical energy between the monocrystalline silicon 104 and the battery 103.

[0040] refer to Figure 2 IV test 6 uses a solar simulator to simulate sunlight on the assembled photovoltaic panel and then uses a digital source meter to test the IV characteristics of the battery to obtain parameters such as open circuit voltage, short circuit current, fill factor, efficiency, series resistance, parallel resistance, etc. After passing IV test 6, it will be sent to the next process for packaging.

[0041] As a technical optimization solution of the present invention, the setting of IV test 6 can assist the single crystal silicon 103 to work, thereby avoiding the single crystal silicon 103 from being scrapped due to failure to convert electrical energy during use.

[0042] refer to Figure 1 , comprising the following steps;

[0043] S1; The user mixes glass pigment with frit and colorant and fills it into the interior of the grinding three-roller machine 2. The grinding effect is achieved by the mutual squeezing of the surfaces of the three horizontal rollers and the friction at different speeds. The particle size of the ground material is adjusted by adjusting the gap between the rollers by adjusting the parallel handwheel screw. The obtained material is screen printed and the screen plate is washed. Screen printing is to stretch silk fabric, synthetic fiber fabric or metal screen on the screen frame, and use manual paint film or photochemical plate making method to make the screen printing plate. The printing plate obtains the shape of the frame 101, and is heated and dried to maintain the glass ink 102 on the surface. The obtained frame 101 is sent to the drying equipment and sintered at 180°C for two hours. The sintered frame 101 with the glass ink 102 on the surface is assembled with the subsequent battery 103 and the single crystal silicon 104 to obtain the impact-resistant photovoltaic frame 101, and S2 is executed;

[0044] S2; The single crystal silicon 104 is subjected to laser scribing 3 to concentrate the laser energy in a tiny area in a very short time, so that the solid is sublimated and evaporated, and the full cutting process and the slotting process belong to the laser ablation process technology, so that the single crystal silicon 104 is cut and processed, and the single crystal silicon 104 is subjected to laser scribing 3 to obtain multiple single crystal silicon 104 for the next process. The single crystal silicon 104 is welded by string welding 4, and the string welding 4 adopts infrared non-contact heating welding, and the welding temperature is controlled by closed-loop automatic control, which can be adjusted within the range of 0-300℃, and the temperature control accuracy of the welding area is <±10℃, so that multiple single crystal silicon 104 are completed in string welding 4, and the next process is carried out after the string welding 4 is completed. After the layout of the single crystal silicon 104 is completed, the lamination 5 operation is carried out, and the single crystal silicon 104 is heated and pressurized to form a multilayer phase A forming processing method combining the same or different materials as a whole, wherein the inner single sheet, the semi-cured sheet and the copper foil are stacked together and pressed at high temperature to form a multi-layer board. For example, a four-layer board requires an inner single sheet, two copper foils and two sets of semi-cured sheets to be pressed. After the monocrystalline silicon 104 is completed through lamination 5, it is manually assembled inside the frame 101 and the battery 103 is electrically connected to the photovoltaic panel through a wire and sent to the next process IV test 6. IV test 6 is performed by irradiating the assembled photovoltaic panel with a solar simulator to simulate sunlight onto the battery, and then the IV characteristics of the battery are tested with a digital source meter to obtain parameters such as open circuit voltage, short circuit current, fill factor, efficiency, series resistance, parallel resistance, etc. After passing IV test 6, it is sent to the next process for packaging, and debugging is completed and packaging and transportation are carried out.

[0045] The working principle and use process of the present invention are as follows: when in use, the user mixes glass pigment with frit and colorant and fills it into the interior of the grinding three-roller machine 2, and the grinding effect is achieved by the mutual extrusion of the surfaces of the three horizontal rollers and the friction at different speeds. The particle size of the ground material is adjusted by adjusting the gap between the rollers by adjusting the parallel hand wheel screw. The obtained material is screen printed and the screen plate is washed. Screen printing is to stretch silk fabric, synthetic fiber fabric or metal screen on the screen frame, and use the method of manual paint film engraving or photochemical plate making to make the screen printing plate. The printing plate obtains the shape of the frame 101, and is heated, dried and maintained. The frame 101 is sent to a drying device and sintered at 180°C for two hours. The sintered frame 101 with the glass ink 102 on the surface is assembled with the subsequent battery 103 and the single crystal silicon 104 to obtain an impact-resistant photovoltaic frame 101. The single crystal silicon 104 is cut by laser scribing 3 to concentrate the laser energy in a tiny area in a very short time, so that the solid is sublimated and evaporated. The grooving process belongs to the laser ablation process technology, so that the single crystal silicon 104 is cut and processed. The single crystal silicon 104 is cut by laser scribing 3 to obtain multiple single crystal silicon 1 04 proceeds to the next process, the single crystal silicon 104 is welded by string welding 4, and the string welding 4 adopts infrared non-contact heating welding, the welding temperature control adopts closed-loop automatic control, which can be adjusted within the range of 0-300℃, and the temperature control accuracy of the welding area is <±10℃, so that multiple single crystal silicon 104 complete string welding 4, and after string welding 4 is completed, the next process is carried out. After the layout of the single crystal silicon 104 is completed, the lamination 5 operation is performed. The single crystal silicon 104 is heated and pressurized to combine multiple layers of the same or different materials as a whole. The inner layer single piece, prepreg, and copper foil are stacked together and pressed at high temperature to form a multi-layer board, such as a four-layer board , it needs an inner layer single sheet, two copper foils and two groups of prepreg sheets to be pressed together. After the monocrystalline silicon 104 is completed through lamination 5, it is manually assembled inside the frame 101 and the battery 103 is electrically connected to the photovoltaic panel through a wire, and then sent to the next process IV test 6. IV test 6 uses a solar simulator to simulate sunlight on the assembled photovoltaic panel, and then uses a digital source meter to test the IV characteristics of the battery to obtain parameters such as open circuit voltage, short circuit current, fill factor, efficiency, series resistance, parallel resistance, etc. After passing IV test 6, it is sent to the next process for packaging, debugging is completed, and packaging and transportation are carried out.

[0046] In summary: the impact-resistant photovoltaic ink material and its preparation method, through the use of photovoltaic structure 1, frame 101, glass ink 102, battery 103, single crystal silicon 104 and grinding three-roller machine 2, solves the problem that the existing photovoltaic is composed of single crystal silicon inside the frame, and the frame cannot resist external impact and may deform and break.

[0047] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0048] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An impact-resistant photovoltaic ink material, characterized in that: include: Photovoltaic mechanism (1); The photovoltaic structure (1) comprises a frame (101), glass ink (102), a battery (103) and single crystal silicon (104); the surface of the frame (101) is sprayed with glass ink (102); the bottom of the frame (101) is provided with a battery (103); the inner side of the frame (101) is provided with single crystal silicon (104); the single crystal silicon (104) is electrically connected to the battery (103) via a wire; and the glass ink (102) is prepared by the following method; The glass pigment mixed with the frit and the coloring agent is filled into the interior of the grinding three-roller machine (2), and the grinding effect is achieved by the mutual extrusion of the surfaces of the three horizontal rollers and the friction at different speeds. The particle size of the ground material is adjusted by adjusting the gap between the rollers by adjusting the parallel hand wheel screw. The obtained material is further prepared and processed by the following method; The above-obtained material is used for screen printing and screen washing. Screen printing is to stretch silk fabric, synthetic fiber fabric or metal screen on a screen frame, and use a manual paint film or photochemical plate making method to make a screen printing plate. The printing plate obtains the shape of the frame (101), and is heated and dried to maintain the glass ink (102) on the surface. The obtained frame (101) is further prepared and processed by the following method; The frame (101) is sent to a drying device and sintered at 180°C for two hours. The sintered frame (101) has glass ink (102) on the surface for subsequent assembly of batteries (103) and single crystal silicon (104).

2. The impact-resistant photovoltaic ink material according to claim 1, characterized in that: The single crystal silicon (104) is subjected to full cutting processing and grooving processing by laser scribing (3) to concentrate laser energy in a tiny area in a very short time, thereby causing solid sublimation and evaporation, and belongs to laser ablation processing technology, so that the single crystal silicon (104) is cut and processed.

3. The impact-resistant photovoltaic ink material according to claim 2, characterized in that: The single crystal silicon (104) is sliced ​​by laser (3) to obtain a plurality of single crystal silicon (104) for the next process. The single crystal silicon (104) is welded by series welding (4). The series welding (4) adopts infrared non-contact heating welding. The welding temperature is controlled by closed-loop automatic control and can be adjusted within the range of 0-300°C. The temperature control accuracy of the welding area is less than ±10°C, so that the plurality of single crystal silicon (104) can complete the series welding (4).

4. The impact-resistant photovoltaic ink material according to claim 3, characterized in that: After the string welding (4) is completed, the next process is carried out. After the layout of the single crystal silicon (104) is completed, the lamination (5) operation is carried out. The single crystal silicon (104) is formed by combining multiple layers of the same or different materials under heating and pressure. The inner layer single sheet, prepreg, and copper foil are stacked together and pressed at high temperature to form a multi-layer board. For example, a four-layer board requires an inner layer single sheet, two copper foils and two groups of prepregs to be pressed.

5. The impact-resistant photovoltaic ink material according to claim 4, characterized in that: After the monocrystalline silicon (104) is completed through lamination (5), it is manually assembled inside the frame (101) and the battery (103) is electrically connected to the photovoltaic panel through wires, and then sent to the next process IV test (6).

6. The impact-resistant photovoltaic ink material according to claim 5, characterized in that: The IV test (6) is performed by irradiating the assembled photovoltaic panel with a solar simulator to simulate sunlight onto the battery, and then using a digital source meter to test the IV characteristics of the battery to obtain parameters such as open circuit voltage, short circuit current, fill factor, efficiency, series resistance, parallel resistance, etc. After passing the IV test (6), it is sent to the next process for packaging.

7. The impact-resistant photovoltaic ink material and preparation method thereof according to claim 1, characterized in that: The steps include: S1; the user mixes glass pigment with frit and colorant and fills it into the interior of the grinding three-roller machine (2); the grinding effect is achieved by the mutual extrusion of the surfaces of the three horizontal rollers and the friction at different speeds; the particle size of the ground material is adjusted by adjusting the gap between the rollers by adjusting the parallel hand wheel screw; the obtained material is screen printed and the screen plate is washed; screen printing is to stretch silk fabric, synthetic fiber fabric or metal screen on the screen frame, and use manual paint film or photochemical plate making method to make the screen printing plate; the printing plate obtains the shape of the frame (101), and is heated and dried to keep the glass ink (102) on the surface; the obtained frame (101) is sent to the drying equipment and sintered at 180°C for two hours; the sintered frame (101) with the glass ink (102) on the surface is subsequently assembled with the battery (103) and the single crystal silicon (104) to obtain the impact-resistant photovoltaic frame (101), and S2 is executed; S2; The single crystal silicon (104) is subjected to full cutting processing and grooving processing by laser scribing (3) to concentrate laser energy in a tiny area in a very short time, so as to sublimate and evaporate the solid, and the single crystal silicon (104) is cut and processed. The single crystal silicon (104) is subjected to laser scribing (3) to obtain a plurality of single crystal silicon (104) for the next process. The single crystal silicon (104) is welded by serial welding (4), and the serial welding (4) adopts infrared non-contact heating welding. The welding temperature is controlled by closed-loop automatic control and can be adjusted within the range of 0-300°C. The temperature control accuracy of the welding area is less than ±10°C, so that the plurality of single crystal silicon (104) are serially welded (4). After the serial welding (4) is completed, the next process is carried out. After the layout of the single crystal silicon (104) is completed, a lamination (5) operation is performed. The single crystal silicon (104) is A molding processing method for combining multiple layers of the same or different materials under heating and pressure, wherein an inner layer single sheet, a semi-cured sheet, and a copper foil are laminated together and pressed at high temperature to form a multi-layer board. For example, a four-layer board requires an inner layer single sheet, two copper foils, and two groups of semi-cured sheets to be pressed. After the monocrystalline silicon (104) is completed by lamination (5), it is manually assembled inside the frame (101) and the battery (103) is electrically connected to the photovoltaic panel through a wire and sent to the next process IV test (6). The IV test (6) is performed by irradiating the assembled photovoltaic panel with a solar simulator to simulate sunlight onto the battery, and then using a digital source meter to test the IV characteristics of the battery to obtain parameters such as open circuit voltage, short circuit current, fill factor, efficiency, series resistance, parallel resistance, etc. After passing the IV test (6), it is sent to the next process for packaging, debugging is completed, and packaging and transportation are carried out.

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