Preparation method of perovskite solar cell with directional interface modification layer

Abstract

The invention relates to a preparation method of a perovskite solar cell with an oriented interface modification layer, and the method comprises the steps: employing IPA and DMF as solvents during the preparation of a two-dimensional perovskite precursor solution, adding a solvent with a high Gutman donor number into the two-dimensional perovskite precursor solution, and enabling the two-dimensional perovskite precursor solution to be composed of one or more than two of isopropanol, DMF, DMSO, DMPO and DMPU. The solvents not only have high solubility and permeability, can effectively introduce a two-dimensional ligand into the three-dimensional perovskite thin film, but also can maintain the perovskite structure not to be decomposed through strong interaction with a lead-iodine octahedron, and the volatilization speed of the solvents can be regulated and controlled by regulating and controlling the proportion of the solvents. Therefore, directional secondary growth of perovskite crystal grains is realized in annealing of preparation of the modification layer, and a two-dimensional perovskite phase with a high lead iodine octahedron layer number, namely a high n value, is mainly used.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic cells, and in particular to a method for preparing a perovskite solar cell with a directional interface modification layer. Background Art

[0002] Perovskite solar cells (PSCs) have attracted much attention due to their tunable band gap, simple preparation and high photoelectric conversion efficiency, and are suitable for various spectral conditions. However, the performance stability of traditional PSCs under weak light is still a challenge, especially for wide-bandgap materials. Two-dimensional perovskite modified layers have attracted widespread attention due to their special structural advantages.

[0003] At present, the preparation of two-dimensional perovskite modification layer mainly includes solution method and evaporation method. The solution method includes preparing two-dimensional perovskite precursor solution, and forming a thin film on the substrate by spin coating, drop coating or spraying the solution, and then performing heat treatment or solvent treatment. The evaporation method uses thermal evaporation technology to co-evaporate the perovskite source material onto the substrate to form a thin film. However, both methods have the problem of difficult control of process parameters, which affects the quality of the film. Summary of the invention

[0004] In view of this, the present application proposes a method for preparing a perovskite solar cell with a directional interface modification layer, thereby optimizing the cell performance.

[0005] According to one aspect of the present application, a method for preparing a perovskite solar cell having a directional interface modification layer is provided, comprising the following steps: Step 1, depositing a conductive substrate on a substrate; Step 2, preparing a hole transport layer on the conductive substrate; Step 3, preparing a three-dimensional perovskite precursor solution; Step 4, preparing a two-dimensional perovskite precursor solution, and adding a solvent with a corresponding number of Guttmann donors to the two-dimensional perovskite precursor solution; Step 5, coating the three-dimensional perovskite precursor solution on the hole transport layer to form a perovskite light absorption layer; Step six, coating the two-dimensional perovskite precursor solution on the perovskite light absorbing layer to form a modified layer; Step seven, preparing an electron transport layer on the modified layer; Step eight, preparing a hole blocking layer on the electron transport layer; Step nine, preparing a back electrode on the hole blocking layer and encapsulating the perovskite solar cell.

[0006] In one achievable manner, the solvent of the two-dimensional perovskite precursor solution includes one or more of IPA, DMF, DMSO, DMPO and DMPU.

[0007] In one achievable manner, the solvent of the two-dimensional perovskite precursor solution is composed of IPA, DMF, DMSO, DMPO and DMPU.

[0008] In one achievable method, preparing a three-dimensional perovskite precursor solution further includes: preparing a solution containing three-dimensional perovskite precursor substances AX and BX2, wherein the solvent of the three-dimensional perovskite precursor solution is DMF and DMSO; preparing a two-dimensional perovskite precursor solution further includes: preparing a solution containing a two-dimensional perovskite precursor substance RX.

[0009] In one achievable manner, the A position is composed of any cation of cesium, rubidium, potassium, amine, amidine or alkali; the B position is composed of any divalent metal cation of lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth and polonium; the R position is composed of any of phenylethylamine, 1,4-butanediamine and guanidine; the X position is chlorine, bromine, iodine, thiocyanate, cyanide, cyanide, acetate, azide, borohydride, Co(CO) 4- 、C(NO2) 3- 、 C(CN) 3- Any anion in it.

[0010] In an achievable manner, coating the three-dimensional perovskite precursor solution on the hole transport layer further comprises: depositing the perovskite precursor solution on the NiO by spin coating or slit coating. x layer and annealed at 100°C for 10 minutes.

[0011] In one achievable manner, coating the two-dimensional perovskite precursor solution on the perovskite light absorbing layer further comprises: depositing the two-dimensional perovskite precursor solution on the perovskite absorbing layer by spin coating or slit coating, and annealing at 70° C.-100° C. for 5 min-10 min.

[0012] In an achievable manner, depositing a conductive substrate on a substrate further comprises: the substrate is a glass substrate, and an ITO or FTO film is deposited on the glass substrate; preparing a hole transport layer on the conductive substrate further comprises: depositing PTAA or NiO on the conductive substrate by spin coating or magnetron sputtering. x film.

[0013] In an achievable manner, preparing the electron transport layer on the modified layer further comprises: depositing a fullerene layer on the modified layer by thermal evaporation or spin coating.

[0014] In an achievable manner, preparing the hole blocking layer on the electron transport layer further comprises: depositing a bath copper layer on the electron transport layer by thermal evaporation or spin coating.

[0015] In one achievable manner, preparing a back electrode on the hole blocking layer and packaging the perovskite solar cell further includes: depositing a metal electrode on the hole blocking layer to complete the preparation of the perovskite solar cell, packaging the prepared solar cell, and performing performance testing on the packaged perovskite solar cell.

[0016] The beneficial effects of the present application are as follows: when preparing a two-dimensional perovskite precursor solution, in addition to using IPA and DMF as solvents, a solvent with a high Guttmann donor number is added to the two-dimensional perovskite precursor solution, which is composed of one or more of isopropanol, DMF, DMSO, DMPO and DMPU. These solvents not only have high solubility and permeability, and can effectively introduce two-dimensional ligands into the interior of the three-dimensional perovskite film, but also can maintain the perovskite structure from decomposition through strong interactions with the lead-iodine octahedron. By regulating the proportion of these solvents, their volatilization rate can be regulated, thereby achieving directional secondary growth of perovskite grains in the annealing of the preparation of the modified layer, with a high number of lead-iodine octahedron layers, that is, a two-dimensional perovskite phase with a high n value as the main phase.

[0017] Other features and aspects of the present application will become apparent from the following detailed description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate exemplary embodiments, features, and aspects of the present application and, together with the description, serve to explain the principles of the present application.

[0019] Figure 1 A schematic diagram showing the structure of a perovskite solar cell with a directional interface modification layer according to an embodiment of the present application is shown; Figure 2 A schematic diagram showing the molecular structure of DMSO according to an embodiment of the present application is shown; Figure 3 A schematic diagram showing the molecular structure of DPSO according to an embodiment of the present application is shown; Figure 4 A schematic diagram showing the molecular structure of DMPU according to an embodiment of the present application is shown; Figure 5 Schematic diagram showing voltage-current curves of the perovskite solar cells in Example 1 and Comparative Example 1; Figure 6 Schematic diagram showing voltage-current curves of the perovskite solar cells in Example 2 and Comparative Example 2; Figure 7 Schematic diagram showing voltage-current curves of the perovskite solar cells in Example 3 and Comparative Example 3; Figure 8 The optical absorption curve and short-circuit current integral of the perovskite solar cell of Example 2 are compared with the spectrum of an indoor fluorescent lamp; Fig. 9 Schematic diagram of voltage-current curves of the perovskite solar cells in Example 2 and Comparative Example 2 under indoor fluorescent light (1000 lux) is shown. DETAILED DESCRIPTION

[0020] Various exemplary embodiments, features and aspects of the present application will be described in detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise specified.

[0021] Among them, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application or simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0022] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0023] The word “exemplary” is used exclusively herein to mean “serving as an example, example, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments.

[0024] In addition, in order to better illustrate the present application, numerous specific details are given in the following specific embodiments. It should be understood by those skilled in the art that the present application can also be implemented without certain specific details. In some examples, methods, means, components and circuits well known to those skilled in the art are not described in detail in order to highlight the subject matter of the present application.

[0025] The present application discloses a method for preparing a perovskite solar cell with a directional interface modification layer, which realizes directional and precise control of the thickness and two-dimensional phase of the two-dimensional perovskite cross-sectional modification layer ④ through adjustment, thereby achieving technical effects such as surface defect passivation, interface energy level matching, and optimization of optical absorption performance and charge transport performance.

[0026] An embodiment of the present application includes the following steps: Step 1, depositing a conductive substrate ① on a substrate; Step 2, preparing a hole transport layer ② on a conductive substrate ①; Step 3, preparing a three-dimensional perovskite precursor solution; Step 4, preparing a two-dimensional perovskite precursor solution, and adding a solvent having a corresponding number of Guttmann donors to the two-dimensional perovskite precursor solution; Step 5, coating the three-dimensional perovskite precursor solution on the hole transport layer ② to form a perovskite light absorption layer ③; Step 6, coating the two-dimensional perovskite precursor solution on the perovskite light absorption layer ③ to form a modified layer ④; Step 7, preparing an electron transport layer ⑤ on the modified layer ④; Step eight, preparing a hole blocking layer ⑥ on the electron transport layer ⑤; Step nine, prepare a back electrode ⑦ on the hole blocking layer ⑥, and encapsulate the perovskite solar cell.

[0027] like Figure 1As shown, the substrate serves as the supporting structure of the solar cell, and a transparent conductive substrate ① is deposited thereon, which is used as an electrode material for subsequent charge collection and transport. A hole transport layer ② is prepared on the transparent conductive substrate ① to help holes be effectively transported from the perovskite layer to the electrode. Then the perovskite material is prepared and processed, including preparing a three-dimensional perovskite precursor solution and preparing a two-dimensional perovskite precursor solution, wherein the solvent added to the two-dimensional perovskite precursor solution ensures that it has a high number of Goodman donors. The prepared perovskite material is prepared on the hole transport layer ②, firstly the three-dimensional perovskite precursor material is coated to form a perovskite light absorption layer ③, and then the two-dimensional perovskite precursor solution is coated and deposited to form a modified layer ④. Electron transport material is deposited on the modified layer ④ to form an electron transport layer ⑤ to help electrons be transported from the perovskite layer to the electrode layer, and then a hole blocking layer ⑥ is prepared on the electron transport layer ⑤ to protect the perovskite layer and the electron transport layer ⑤ and promote the efficiency of charge collection. Finally, the back electrode⑦ is deposited as the top electrode of the entire solar cell, and the prepared perovskite photovoltaic cell is packaged and tested. The packaging can prevent the impact of environmental conditions on device performance, such as changes in light and humidity. The performance of the packaged perovskite solar cell needs to be tested, including the photoelectric conversion efficiency (PCE), short-circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF) to evaluate the photoelectric conversion efficiency and stability during the process.

[0028] The prepared perovskite photovoltaic cell consists of, from bottom to top, a substrate, a conductive substrate ①, a hole transport layer ②, a perovskite light absorption layer ③, a modification layer ④, an electron transport layer ⑤, a hole blocking layer ⑥ and a back electrode ⑦.

[0029] In one achievable manner, the solvent of the two-dimensional perovskite precursor solution includes one or more of IPA, DMF, DMSO, DMPO and DMPU.

[0030] like Figure 2-4 As shown, in addition to the conventional IPA (isopropyl alcohol) and DMF (dimethylformamide) used in the precursor solution of the modification layer ④, one or more of DMSO (dimethyl sulfoxide), DMPO (diphenyl sulfoxide) and DMPU (N,N-dimethylprop-2-ynamine) are additionally introduced, all of which have high Gutmann donor number (D N ) of a solvent, wherein D NThe value refers to the strength of the electron donating part in a molecule or ion, which characterizes the ability of the compound to donate electrons. These solvents not only have high solubility and permeability, and can effectively introduce two-dimensional ligands into the interior of the three-dimensional perovskite film, but also maintain the perovskite structure from decomposition through strong interactions with the lead-iodine octahedron. By regulating the proportion of these solvents, their volatilization rate can be regulated, thereby achieving directional secondary growth and optimization of perovskite grains in the annealing after preparing the modification layer ④, with a high number of lead-iodine octahedron layers, that is, a two-dimensional perovskite phase with a high n value, which significantly improves the crystallization quality and electron transport performance of the perovskite film, and achieves an improvement in indoor photovoltaic performance through spectral matching.

[0031] In one achievable method, preparing a three-dimensional perovskite precursor solution further includes: preparing a solution containing three-dimensional perovskite precursor substances AX and BX2, wherein the solvent of the three-dimensional perovskite precursor solution is DMF and DMSO; preparing a two-dimensional perovskite precursor solution further includes: preparing a solution containing a two-dimensional perovskite precursor substance RX.

[0032] In one achievable manner, the A position is composed of any cation of cesium, rubidium, potassium, amine, amidine or alkali; the B position is composed of any divalent metal cation of lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth and polonium; the R position is composed of any of phenylethylamine, 1,4-butanediamine and guanidine; the X position is chlorine, bromine, iodine, thiocyanate, cyanide, cyanide, acetate, azide, borohydride, Co(CO) 4- 、C(NO2) 3- 、 C(CN) 3- The solvents are DMF (dimethylformamide) and DMSO (dimethyl sulfoxide).

[0033] In addition, the preparation of the two-dimensional perovskite precursor solution is to prepare a solution containing a two-dimensional perovskite precursor substance PX, wherein R is one of phenylethylamine, 1,4-butanediamine, and guanidine, and the solvent is one or more of isopropanol, DMF (dimethylformamide), DMSO (dimethyl sulfoxide), DMPO diphenyl sulfoxide () and DMPU (N,N-dimethylprop-2-ynamine).

[0034] In this embodiment, when preparing a three-dimensional perovskite precursor solution, the three-dimensional perovskite precursor solution contains AX and BX2 substances. The perovskite structure is ABX3, wherein A is any cation of cesium, rubidium, potassium, amine, amidine or alkali family, B is any divalent metal cation of lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth, and polonium, and X is chlorine, bromine, iodine, thiocyanate, cyanide, cyanide, acetate, azide, borohydride, Co(CO )4 - 、C(NO2) 3- 、 C(CN) 3- Any anion in .

[0035] In one achievable manner, coating the three-dimensional perovskite precursor solution on the hole transport layer ② further comprises: depositing the perovskite precursor solution on the NiO by spin coating or slit coating. x layer and annealed at 100°C for 10 minutes.

[0036] In one achievable manner, coating the two-dimensional perovskite precursor solution on the perovskite light absorbing layer ③ further comprises: depositing the two-dimensional perovskite precursor solution on the perovskite absorbing layer by spin coating or slit coating, and annealing at 70° C.-100° C. for 5 min-10 min.

[0037] In one achievable method, depositing a conductive substrate ① on a substrate further includes: the substrate is a glass substrate, and an ITO (indium tin oxide) or FTO (fluorine-doped tin oxide) film is deposited on the glass substrate to form a transparent conductive oxide (TCO) coating; preparing a hole transport layer ② on the TCO further includes: depositing PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine) or NiO on the conductive substrate ① by spin coating or magnetron sputtering. x (Nickel Oxide) Thin Film.

[0038] In one achievable manner, preparing the electron transport layer ⑤ on the modified layer ④ further includes: depositing a fullerene (C60 or PCBM) layer on the modified layer ④ by thermal evaporation or spin coating, which is used as an electron transport material to help electrons be transported from the perovskite layer to the electrode layer.

[0039] In one achievable manner, preparing the hole blocking layer ⑥ on the electron transport layer ⑤ further includes: depositing a bath copper layer (BCP) on the electron transport layer ⑤ by thermal evaporation or spin coating to protect the perovskite layer and the electron transport layer ⑤ and promote charge collection efficiency.

[0040] In one achievable method, preparing a back electrode ⑦ on the hole blocking layer ⑥ and packaging the perovskite solar cell also includes: depositing a metal electrode on the hole blocking layer ⑥ to complete the preparation of the perovskite solar cell, packaging the prepared solar cell, and performing performance testing on the packaged perovskite solar cell.

[0041] In this embodiment, a metal electrode is deposited on the BCP as the top electrode of the entire perovskite solar cell, wherein the metal electrode is silver or copper. The completed perovskite solar cell device is packaged to prevent the environmental conditions from affecting the device performance, and the performance is tested, including the photoelectric conversion efficiency (PCE), short circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF) to evaluate the photoelectric conversion efficiency and stability of the device.

[0042] Comparative Examples 1, 2 and 3 are all prepared by the same process as the technical solution of the present application. Preferably, the TCO anode is ITO, and the perovskite A site is CsFAMA (cesium (Cs), formamidine (FA, i.e. HC (NH2) 2+ ), methylamine (MA, CH3NH 3+ ) and A-position cation) ternary cation mixed components, B-position is Pb, X-position is I, Br mixed components, the two-dimensional perovskite interface modification layer ④ precursor solution is BDAI (1,4-butanediamine) dissolved in IPA (isopropanol), the concentration is adjustable from 0.5mg / ml to 4mg / ml, the electron transport layer ⑤ uses PCBM (fullerene derivative), and the back electrode ⑦ uses Ag.

[0043] Dissolving a two-dimensional perovskite cationic interface modifier (BDAI (1,4-butylene diamine), PEACI (phenylethylamine chloride) or GAI (methylamine iodine) etc.) in a solvent and preparing an interface modification solution with a concentration of 0.5 mg / ml-4 mg / ml, wherein the concentration of the interface modification solution is preferably 0.5 mg / ml-1.5 mg / ml, and the solvent is one or more of IPA, DMSO, DMPO and DMPU; The interface modification solution is deposited on the prepared three-dimensional perovskite surface by spin coating or slit coating, wherein the spin coating method adopts static spin coating, the rotation speed is 2000rpm-6000rpm, preferably 4000rpm; the slit coating method coating speed is 8mm / s-30mm / s, preferably 20mm / s. A thermal annealing treatment is performed, wherein the treatment temperature is preferably 70°C-100°C and the treatment time is 5min-10min.

[0044] In order to illustrate the superiority of the surface modification method of the present application, the following examples are now carried out: Example 1: Compared with the comparative example, the solvent of the two-dimensional perovskite interface modification layer ④ precursor solution in Example 1 was changed to IPA mixed with DMSO in a ratio of 99:1, and the rest of the preparation process was not modified.

[0045] Example 2: Compared with the comparative example, the solvent of the two-dimensional perovskite interface modification layer ④ precursor solution in Example 2 was changed to IPA mixed with DMPO in a ratio of 99:1, and the rest of the preparation process was not modified.

[0046] Example 3: Compared with the comparative example, the solvent of the two-dimensional perovskite interface modification layer ④ precursor solution in Example 3 was changed to IPA mixed with DMPU in a ratio of 99:1, and the rest of the preparation process was not modified.

[0047] according to Figure 5-Figure 7 As shown in the schematic diagram of the voltage-current curve of the perovskite solar cell in the embodiment and the comparative example, it can be seen that the typical photoelectric conversion efficiency of the comparative example is 21.53%. The open circuit voltage and short circuit current of Example 1, Example 2 and Example 3 are higher than those of the comparative example, and their photoelectric conversion efficiencies are 23.40%, 24.03% and 21.83% respectively, which are significantly improved. The test conditions are AM1.5G, 100mW / cm 2 .

[0048] Figure 8 The second embodiment of the present invention is the most efficient one. Its optical absorption curve and short-circuit current integral are compared with the spectrum of indoor fluorescent lamps. It can be seen that the modified perovskite film in the second embodiment forms a two-dimensional perovskite phase dominated by n=2 and n=3 (the chemical formula is BDA(A)n-1BnX3n+1, and the n value is the number of lead iodine octahedron layers), and its optical absorption forms a good match with the spectrum of indoor fluorescent light source, and its current is significantly improved at the wavelength with the strongest fluorescent light intensity. Therefore, this embodiment should be conducive to the performance improvement of perovskite indoor photovoltaics.

[0049] The above Example 2 and Comparative Example 2 were placed under a fluorescent light source to perform a JV curve test. Fig. 9 As shown, the open circuit voltage of Example 2 is 0.988 V and the short circuit current density is 146 μA / cm -2 , the fill factor is 83.09%, the photoelectric conversion efficiency is 42.89%, while the open circuit voltage of comparative example 2 is 0.970V and the short circuit current density is 134μA / cm -2 , the filling factor is 81.94% and the photoelectric conversion efficiency is 38.01%.

[0050] It should be noted that although the present application is used as an example to introduce a method for preparing a perovskite solar cell with a directional interface modification layer, those skilled in the art will understand that the present application should not be limited thereto. In fact, the user can flexibly set various parameters according to personal preferences and / or actual application scenarios, as long as the design is reasonable.

[0051] Thus, when preparing a two-dimensional perovskite precursor solution, in addition to using IPA and DMF as solvents, a solvent with a high Guttmann donor number is added to the two-dimensional perovskite precursor solution, which is composed of one or more of isopropanol, DMF, DMSO, DMPO and DMPU. These solvents not only have high solubility and permeability, and can effectively introduce two-dimensional ligands into the interior of the three-dimensional perovskite film, but also can maintain the perovskite structure from decomposition through strong interaction with the lead iodine octahedron. By regulating the proportion of these solvents, their volatilization rate can be regulated, thereby achieving directional secondary growth of perovskite grains in the annealing of the preparation of the modified layer, with a high number of lead iodine octahedron layers, that is, a two-dimensional perovskite phase with a high n value as the main phase.

[0052] The embodiments of the present application have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The selection of terms used herein is intended to best explain the principles of the embodiments, practical applications, or improvements to the technology in the market, or to enable other persons of ordinary skill in the art to understand the embodiments disclosed herein.

Claims

1. A method for preparing a perovskite solar cell with a directional interface modification layer, characterized in that: The steps include: Step 1, depositing a conductive substrate on a substrate; Step 2, preparing a hole transport layer on the conductive substrate; Step 3, preparing a three-dimensional perovskite precursor solution; Step 4, preparing a two-dimensional perovskite precursor solution, and adding a solvent with a corresponding number of Guttmann donors to the two-dimensional perovskite precursor solution; Step 5, coating the three-dimensional perovskite precursor solution on the hole transport layer to form a perovskite light absorption layer; Step six, coating the two-dimensional perovskite precursor solution on the perovskite light absorbing layer to form a modified layer; Step seven, preparing an electron transport layer on the modified layer; Step eight, preparing a hole blocking layer on the electron transport layer; Step nine, preparing a back electrode on the hole blocking layer and encapsulating the perovskite solar cell.

2. The method for preparing a perovskite solar cell with a directional interface modification layer according to claim 1, characterized in that: The solvent of the two-dimensional perovskite precursor solution includes one or more of IPA, DMF, DMSO, DMPO and DMPU.

3. The method for preparing a perovskite solar cell with a directional interface modification layer according to claim 2, characterized in that: The solvent of the two-dimensional perovskite precursor solution is composed of IPA, DMF, DMSO, DMPO and DMPU.

4. The method for preparing a perovskite solar cell with a directional interface modification layer according to claim 1 or 2, characterized in that: The preparation of the three-dimensional perovskite precursor solution also includes: preparing a solution containing three-dimensional perovskite precursor substances AX and BX2, wherein the solvent of the three-dimensional perovskite precursor solution is DMF and DMSO; The preparation of the two-dimensional perovskite precursor solution also includes: preparing a solution containing a two-dimensional perovskite precursor substance RX.

5. The method for preparing a perovskite solar cell with a directional interface modification layer according to claim 3, characterized in that: The A position is composed of any cation of cesium, rubidium, potassium, amine, amidine or alkali group, and the B position is composed of any divalent metal cation of lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth and polonium; The R position is any one of phenylethylamine, 1,4-butanediamine, and guanidine; X is chlorine, bromine, iodine, thiocyanate, cyanide, oxycyanide, acetate, azide, borohydride, Co(CO) 4- 、C(NO2) 3- 、C(CN) 3- Any anion in it.

6. The method for preparing a perovskite solar cell with a directional interface modification layer according to claim 1, characterized in that: The method of coating the three-dimensional perovskite precursor solution on the hole transport layer further comprises: depositing the perovskite precursor solution on the NiO layer by spin coating or slit coating. x layer and annealed at 100°C for 10 minutes.

7. The method for preparing a perovskite solar cell with a directional interface modification layer according to any one of claims 1 to 6, characterized in that: Coating the two-dimensional perovskite precursor solution on the perovskite light absorption layer also includes: depositing the two-dimensional perovskite precursor solution on the perovskite absorption layer by spin coating or slit coating, and annealing at 70° C.-100° C. for 5 min-10 min.

8. The method for preparing a perovskite solar cell with a directional interface modification layer according to any one of claims 1 to 6, characterized in that: Depositing a conductive substrate on a substrate further comprises: the substrate is a glass substrate, and an ITO or FTO film is deposited on the glass substrate; The method of preparing a hole transport layer on the conductive substrate further comprises: depositing PTAA or NiO on the conductive substrate by spin coating or magnetron sputtering. x film.

9. The method for preparing a perovskite solar cell with a directional interface modification layer according to any one of claims 1 to 6, characterized in that: The step of preparing the electron transport layer on the modified layer further comprises: depositing a fullerene layer on the modified layer by thermal evaporation or spin coating. The method of preparing the hole blocking layer on the electron transport layer further comprises: depositing a bath copper layer on the electron transport layer by thermal evaporation or spin coating.

10. The method for preparing a perovskite solar cell with a directional interface modification layer according to any one of claims 1 to 6, characterized in that: The method of preparing a back electrode on the hole blocking layer and packaging the perovskite solar cell also includes: depositing a metal electrode on the hole blocking layer to complete the preparation of the perovskite solar cell, packaging the prepared solar cell, and performing a performance test on the packaged perovskite solar cell.

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