Microsystem manufacturing method based on copper through hole and medium hybrid bonding and sensor

Abstract

The invention provides a microsystem manufacturing method based on copper through hole and medium hybrid bonding and a sensor. The method comprises the following steps: preparing a first to-be-bonded body and a second to-be-bonded body; putting the first to-be-bonded body and the second to-be-bonded body into CMP equipment, and respectively polishing the metal conductive columns of the first to-be-bonded body and the second to-be-bonded body and the surfaces of the dielectric layers surrounding the metal conductive columns by using a polishing solution with a preset concentration; putting the polished first to-be-bonded body and the polished second to-be-bonded body into bonding equipment in a manner that the first surfaces are oppositely arranged; and sequentially carrying out initial adhesion and high-temperature annealing operation at room temperature in the bonding equipment, so that the metal conductive columns at the corresponding positions of the polished first to-be-bonded body and the polished second to-be-bonded body are bonded to obtain a bonded body, and obtaining the sensor based on the bonded body. According to the invention, the precision and reliability of bonding can be improved, and the strength and stability of a bonding interface can be improved.

Description

Technical Field

[0001] The present application relates to the field of high-density interconnection of microsystems, and in particular to a microsystem manufacturing method and a sensor based on copper through-hole and dielectric hybrid bonding. Background Art

[0002] Since the pitch and area of ​​the ball planting or pad preparation are relatively large, the required backfill temperature cannot be well matched when bonding using traditional bump technology, resulting in poor reliability and heat dissipation during the bonding process, which greatly reduces the performance of the device after bonding. Therefore, there is an urgent need for a bonding solution that can avoid the above problems and improve the performance of the device after bonding. Summary of the invention

[0003] The present application provides a microsystem manufacturing method and a sensor based on copper through-hole and dielectric hybrid bonding to solve the problems of poor reliability and heat dissipation of the bonding process in the prior art.

[0004] In a first aspect, the present application provides a microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding, comprising: preparing a first body to be bonded and a second body to be bonded; The first object to be bonded and the second object to be bonded are placed in a CMP device, and the metal conductive pillars of the first object to be bonded and the second object to be bonded and the surface of the dielectric layer surrounding the metal conductive pillars are polished respectively using a polishing liquid of a preset concentration, and the polished metal conductive pillars are lower than the polished dielectric layer; Putting the polished first object to be bonded and the second object to be bonded into a bonding device in a manner that the first surfaces are arranged opposite to each other, wherein the first surface is the surface where the metal conductive column and the dielectric layer are located; Initial attachment at room temperature and high temperature annealing operations are sequentially performed in the bonding device to bond the metal conductive pillars at corresponding positions of the polished first body to be bonded and the polished second body to be bonded to obtain a bonded body, and a sensor is obtained based on the bonded body.

[0005] In a second aspect, the present application provides a sensor, wherein the bonding body is prepared using the microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding described in the first aspect.

[0006] The present application provides a microsystem manufacturing method and a sensor based on copper through-hole and dielectric hybrid bonding. The metal conductive pillars of the first body to be bonded and the second body to be bonded and the dielectric layer surrounding the metal conductive pillars are polished by CMP equipment, so that the flatness of the metal conductive pillars and the dielectric layer surfaces can be accurately controlled, and the polished metal conductive pillars can be ensured to be lower than the polished dielectric layer, which helps to improve the bonding accuracy and reliability. At the same time, impurities and defects on the surfaces of the metal conductive pillars and the dielectric layer can be removed, so that a smoother transition is formed between the metal conductive pillars and the dielectric layer, and the unevenness of the bonding interface is reduced, which helps to form a more compact and uniform bonding process. Uniform chemical bond connection improves the strength and stability of the bonding interface; in addition, the combination of initial attachment at room temperature and high-temperature annealing operations can further promote the formation of chemical bonds between the metal conductive pillars, and the high-temperature annealing operation helps to eliminate the residual stress on the bonding interface and enhance the bonding strength, so that the final bonded body has higher mechanical stability and durability; the present application can also be applied to a variety of metal conductive pillars and dielectric layer materials, has a wide range of applicability, and can also flexibly adapt to different materials and process requirements by adjusting parameters such as polishing liquid concentration, polishing time and annealing temperature, providing more possibilities for the preparation of hybrid bonding layer through-hole interconnections. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0008] Figure 1 It is a flow chart of the traditional bump technology; Figure 2 It is a flow chart of the implementation of the microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding provided in the embodiment of the present application; Figure 3 is a schematic diagram of the preparation process of the first to-be-bonded body provided in an embodiment of the present application; Figure 4 is a schematic diagram of the preparation process of the second to-be-bonded body provided in an embodiment of the present application; Figure 5 is a schematic diagram of a hybrid bonding process provided in an embodiment of the present application; Figure 6 is a schematic structural diagram of a bonding body after bonding provided in an embodiment of the present application; Figure 7 is a schematic diagram of the preparation process of the sensor provided in the embodiment of the present application; Figure 8It is a schematic diagram of the structure of the sensor provided in the embodiment of the present application. DETAILED DESCRIPTION

[0009] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present application. However, it should be clear to those skilled in the art that the present application may also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present application.

[0010] In order to make the purpose, technical solutions and advantages of the present application clearer, specific embodiments will be described below in conjunction with the accompanying drawings.

[0011] At present, various functional chips are generally prepared by ball planting or preparing pad reflow on TSV (Through Silicon Via). The chip is integrated on the silicon substrate by reflow soldering to complete the welding of the chip and the silicon substrate, and then the organic medium is refilled to achieve microsystem integration. For example, the process of bonding using traditional bump technology refers to Figure 1 First, the metal conductive pillars (i.e., copper pillars) are soldered, then attached and reflowed, and finally the bottom is filled with glue to complete the bonding. Since the pitch and area of ​​the ball planting or pad preparation are relatively large, a refill temperature is required, but the refill temperature cannot be controlled and does not match the actual needs, which will lead to great problems in bonding reliability and heat dissipation.

[0012] Based on the above problems, the present application provides a microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding, in which metal conductive pillars and dielectric layers are polished by CMP (chemical mechanical polishing) equipment, and the metal conductive pillars are slightly faster than the dielectric layer by chemical etching ratio, in order to make the polished metal conductive pillars lower than the dielectric layer, and then annealed to achieve connectivity by using the different thermal expansion coefficients of silicon wafers and metal conductive pillar materials. After bonding, the electrical signal is realized through the metal in the middle, with the highest density and integration, no backfilling required, and the best reliability.

[0013] Figure 2 The implementation flow chart of the microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding provided in the embodiment of the present application is described in detail as follows: In step 201, a first object to be bonded and a second object to be bonded are prepared.

[0014] In the embodiment of the present application, a first body to be bonded and a second body to be bonded are prepared by using a bonding body preparation method.

[0015] In a possible implementation, preparing the first object to be bonded and the second object to be bonded may include: The first bonding body is obtained by sequentially performing cavity preparation, through-hole etching, copper filling, thermal oxidation strip resist photolithography and etching, and structural etching on a silicon substrate; Oxide layer etching, copper wiring and thin film deposition are sequentially performed on the silicon substrate to obtain a second body to be bonded.

[0016] Optionally, when preparing the first to-be-bonded body, refer to Figure 3 , cavity preparation (Cavity SOI preparation), through hole etching (Via etch), copper filling (Cu filling), lithography and etch of thermal oxide strip resist (Litho and etch of Thermal oxide Strip resist) and structure etching (DSiE (some oxide will be consumed)) are performed on the silicon substrate (Wafer1, i.e. Si) to obtain the first body to be bonded 1.

[0017] In the embodiment of the present application, three-layer oxide layer etching and copper wiring are required when preparing the second body to be bonded. The process of preparing the second body to be bonded is as follows: Figure 4 , the first oxide layer etching (Oxide etch), the first copper routing (Cu Routing), the second oxide layer etching (oxide), the second copper routing (Secondary Cu routing), the third oxide layer etching (oxide), the third copper routing (Third Cu routing and bonding layer) and the thin film deposition (Bonding) are sequentially performed on the silicon substrate (Wafer2, i.e. Si) to obtain the second body to be bonded 2.

[0018] In step 202, the first body to be bonded and the second body to be bonded are placed in a CMP device, and the metal conductive pillars of the first body to be bonded and the second body to be bonded and the surface of the dielectric layer surrounding the metal conductive pillars are polished respectively using a polishing liquid of a preset concentration, and the polished metal conductive pillars are lower than the polished dielectric layer.

[0019] Among them, in the traditional technology, acidic corrosive liquid is often used to clean impurities on the surface of metal conductive pillars and dielectric layers. However, acidic corrosive liquid is not easy to control and can easily damage the metal, causing peeling between the metal and the dielectric layer. Therefore, the embodiment of the present application uses CMP equipment for polishing and etching to achieve a smooth surface with a flatness of the order of angstroms, and the metal conductive pillars are lower. It has the advantages of high process control precision and good uniformity, and there is no reliability problem.

[0020] In an embodiment of the present application, the first body to be bonded and the second body to be bonded are placed in a CMP device in a thousand-level environment, and a polishing liquid of a preset concentration is placed in the CMP device. The metal conductive pillars of the first body to be bonded and the second body to be bonded and the surface of the dielectric layer surrounding the metal conductive pillars are polished respectively. After the metal conductive pillars and the surface of the dielectric layer are polished clean, the polished metal conductive pillars are slightly lower than the polished dielectric layer.

[0021] Among them, the polishing liquid with a preset concentration is a chemical auxiliary liquid added to the original polishing liquid, which can polish the dielectric layer and also corrode the metal.

[0022] The embodiment of the present application can accurately control the flatness of the surface of the metal conductive column and the dielectric layer through CMP technology, ensuring that the polished metal conductive column is lower than the polished dielectric layer. This precise surface treatment provides a good contact foundation for the subsequent bonding process, which helps to improve the accuracy and reliability of bonding. At the same time, the polishing process not only removes impurities and defects on the surface of the metal conductive column and the dielectric layer, but also forms a smoother transition between the metal conductive column and the dielectric layer, reducing the unevenness of the bonding interface. This helps to form a tighter and more uniform chemical bond connection during the bonding process, thereby improving the strength and stability of the bonding interface.

[0023] In a possible implementation, the polished metal conductive pillar is lower than the polished dielectric layer by a first height; the first height ranges from 1 to 10 nm.

[0024] Optionally, since the polished metal conductive pillars and the dielectric layer are bonded, in order to achieve better bonding effect and better sealing, during polishing, the embodiment of the present application is required to make the surface of the polished metal conductive pillars slightly lower than the surface of the polished dielectric layer. In this way, during bonding, the dielectric layer is bonded first, and then the metal conductive pillars in the middle of the dielectric layer are tightly bonded due to the thermal expansion of the metal material, making the bonding more reliable.

[0025] In a possible implementation, the metal conductive pillar may be a copper pillar, or other metals having active properties and good conductivity.

[0026] In a possible implementation, the dielectric layer may be TaN-Ta-SiCN-SiN.

[0027] In a possible implementation, the dielectric layer may also be BPSG.

[0028] Since hybrid bonding is mainly about the surface state, similar to direct bonding, it has very high requirements for surface flatness, and the presence of steps will greatly affect the bonding effect.

[0029] Currently, hybrid bonding is mainly based on SiCN or silicon oxide, and has very high requirements for surface quality. First, the particle size must be strictly controlled to ensure the contamination level of the substrate. Second, the surface flatness requirements must be met. Steps will greatly affect the bonding success rate.

[0030] Among them, boro-phospho-silicate glass (BPSG) is a type of silica glass doped with boron and phosphorus. The main components of BPSG include silicon, boron and phosphorus, which together form a ternary glass system. Compared with traditional PSG (phosphate glass), BPSG has better fluidity and lower flow temperature. In practical applications, BPSG films are widely used in low-temperature flow dielectric materials.

[0031] Moreover, BPSG has good reflow performance and is relatively easy to achieve a flat surface. It is more easily corroded than silicon oxide, so adding corrosive agents to the polishing liquid can effectively improve process efficiency, facilitate growth, and achieve good coverage.

[0032] The embodiment of the present application can also use a flowable film as a dielectric layer. The embodiment of the present application envisions depositing a thicker layer of BPSG on the bonding surface. By utilizing its properties, it can be reflowed to make the surface of the dielectric layer flat, and there is no gap left at the corners of the wiring steps, which reduces stress, and the CMP efficiency is also easy to improve, and the process window is larger. In addition, since it is easy to achieve thicker growth during polishing, the process window is larger and easier to control by comparing the corrosion rate of BPSG and metal after opening, and it is easier to control the height and uniformity of the TSV metal surface relative to the dielectric surface, thereby improving the process yield.

[0033] In a possible implementation, before placing the first object to be bonded and the second object to be bonded into the CMP device, the method may further include: Removing the organic thin films of the first object to be bonded and the second object to be bonded respectively by using a preset reducing gas; Accordingly, placing the first object to be bonded and the second object to be bonded into the CMP device may include: The first object to be bonded from which the organic film is removed and the second object to be bonded are placed in a CMP device.

[0034] Optionally, since metal materials (such as copper) are too active, if they are not protected before bonding, oxidation and other phenomena will occur, making the metal material impure, thereby reducing conductivity. Therefore, when protecting the metal material, the embodiment of the present application uses an organic film to protect the metal via or wiring process. Before bonding, the organic film around the metal is removed in the pretreatment chamber using a preset reducing gas or plasma to restore the clean metal surface.

[0035] The preset reducing gas may include an etching gas, a mixed gas of hydrogen and nitrogen, etc. In addition, the plasma may be a plasma of F-based combined with oxygen.

[0036] In a possible implementation, the organic film is any one of MS6020, a carbon-based film prepared by MVD, a carbon-based film prepared by ALD, and a FC-based compound film.

[0037] The organic film MS6020 is a metal reduction protection liquid, and this embodiment uses MS6020 to protect the metal.

[0038] In step 203, the polished first object to be bonded and the second object to be bonded are placed in a bonding device in a manner of having their first surfaces facing each other, wherein the first surface is the surface where the metal conductive column and the dielectric layer are located.

[0039] In the embodiment of the present application, the first body to be bonded and the second body to be bonded after polishing in step 202 are placed in a bonding device in a manner that the first surfaces where the metal conductive pillars and the dielectric layer are located are arranged relative to each other. The first body to be bonded and the second body to be bonded after polishing are arranged relative to each other in the manner that the first surfaces are arranged relative to each other because there are metal conductive pillars and the dielectric layer on the first surface to be bonded.

[0040] In step 204, initial attachment at room temperature and high temperature annealing operations are sequentially performed in a bonding device to bond the metal conductive pillars at corresponding positions of the polished first bonded body and the polished second bonded body to obtain a bonded body, and a sensor is obtained based on the bonded body.

[0041] In the embodiment of the present application, after the polished first body to be bonded and the second body to be bonded are placed in the bonding device in a manner in which the first surfaces are arranged opposite to each other, the bonding device is sequentially subjected to initial attachment at room temperature and high temperature annealing operations to bond the metal conductive pillars at corresponding positions of the polished first body to be bonded and the polished second body to be bonded to obtain a bonded body, and a sensor is obtained based on the bonded body. The sensor prepared in the embodiment of the present application is a MEMS sensor.

[0042] Among them, since no glue filling is required in this embodiment, a comprehensive inspection can be achieved after high-temperature annealing to ensure the overall quality, with the lowest overall cost and easy mass production.

[0043] For detailed bonding process, please refer to Figure 5 The polished first and second bodies to be bonded are placed in a bonding device, and initial attachment at room temperature and high-temperature annealing operations are performed in sequence to achieve bonding.

[0044] In a possible implementation, the temperature range of the high temperature annealing operation is 200-500°C.

[0045] The structure of the bonded body after bonding is referred to as Figure 6 shown.

[0046] In a possible implementation, obtaining a sensor based on a bonded body may include: The bonding body is subjected to grinding and thinning, photolithography and etching, insulation layer deposition, copper filling, copper wiring, oxide layer etching and bump preparation in sequence to obtain a sensor.

[0047] Optionally, refer to Figure 7 The bonded bonding body 3 is subjected to grinding and thinning (grinding down), photolithography etching (TSV etch), deposition of an insulating layer (isolation), copper filling (Cu filling) and bump preparation (BUMPS) in sequence to obtain a MEMS sensor.

[0048] For example, 50 um thinning is required during grinding and thinning.

[0049] Among them, after copper filling, oxide layer etching and copper wiring are carried out in sequence, and then bump preparation is carried out.

[0050] In the embodiment of the present application, in addition to the bump preparation, ball planting preparation can also be performed, which is selected according to actual needs.

[0051] The present application embodiment adopts a preparation method combining CMP polishing and high temperature annealing, which can realize an automated and continuous production process, reduce manual intervention, and improve production efficiency. In addition, due to the precise control of the polishing liquid and annealing conditions, it can also minimize material waste and defective product rate, thereby reducing production costs.

[0052] The present application provides a microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding, in which the metal conductive pillars of the first body to be bonded and the second body to be bonded and the dielectric layer surrounding the metal conductive pillars are polished by CMP equipment, and the flatness of the surfaces of the metal conductive pillars and the dielectric layer can be accurately controlled, and the polished metal conductive pillars can be ensured to be lower than the polished dielectric layer, which helps to improve the bonding accuracy and reliability. At the same time, impurities and defects on the surfaces of the metal conductive pillars and the dielectric layer can be removed, so that a smoother transition is formed between the metal conductive pillars and the dielectric layer, and the unevenness of the bonding interface is reduced, which helps to form a more compact and uniform chemical bonding process. Chemical bond connection can be achieved by combining initial attachment at room temperature with high-temperature annealing, thereby improving the strength and stability of the bonding interface. In addition, the combination of initial attachment at room temperature and high-temperature annealing can further promote the formation of chemical bonds between the metal conductive pillars, and the high-temperature annealing operation helps to eliminate the residual stress on the bonding interface and enhance the bonding strength, so that the final bonded body has higher mechanical stability and durability. The present application can also be applied to a variety of metal conductive pillars and dielectric layer materials, has a wide range of applicability, and can also flexibly adapt to different materials and process requirements by adjusting parameters such as polishing liquid concentration, polishing time and annealing temperature, providing more possibilities for the preparation of through-hole interconnections between mixed bonding layers.

[0053] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0054] The following is an embodiment of the device of the present application. For details not described in detail, please refer to the corresponding method embodiment described above.

[0055] Figure 8 The schematic diagram of the structure of the sensor prepared by the microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding provided in the embodiment of the present application is shown. For the convenience of explanation, only the part related to the embodiment of the present application is shown, which is described in detail as follows: like Figure 8 As shown, the sensor includes, from bottom to top, a first silicon substrate, a first oxide layer, a first wiring layer, a bonding layer, a cavity layer, a second silicon substrate, a second oxide layer, a second wiring layer and a bump.

[0056] The present application provides a device prepared by a microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding. The metal conductive pillars of a first body to be bonded and a second body to be bonded and a dielectric layer surrounding the metal conductive pillars are polished by a CMP device, so that the flatness of the surfaces of the metal conductive pillars and the dielectric layer can be accurately controlled, and the polished metal conductive pillars can be ensured to be lower than the polished dielectric layer, which helps to improve the bonding accuracy and reliability. At the same time, impurities and defects on the surfaces of the metal conductive pillars and the dielectric layer can be removed, so that a smoother transition is formed between the metal conductive pillars and the dielectric layer, and the unevenness of the bonding interface is reduced, which helps to form a more compact and uniform bonding process. Uniform chemical bond connection improves the strength and stability of the bonding interface; in addition, the combination of initial attachment at room temperature and high-temperature annealing operations can further promote the formation of chemical bonds between the metal conductive pillars, and the high-temperature annealing operation helps to eliminate the residual stress on the bonding interface and enhance the bonding strength, so that the final bonded body has higher mechanical stability and durability; the present application can also be applied to a variety of metal conductive pillars and dielectric layer materials, has a wide range of applicability, and can also flexibly adapt to different materials and process requirements by adjusting parameters such as polishing liquid concentration, polishing time and annealing temperature, providing more possibilities for the preparation of hybrid bonding layer through-hole interconnections.

[0057] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding, characterized in that: include: preparing a first body to be bonded and a second body to be bonded; The first object to be bonded and the second object to be bonded are placed in a CMP device, and the metal conductive pillars of the first object to be bonded and the second object to be bonded and the surface of the dielectric layer surrounding the metal conductive pillars are polished respectively using a polishing liquid of a preset concentration, and the polished metal conductive pillars are lower than the polished dielectric layer; Putting the polished first object to be bonded and the second object to be bonded into a bonding device in a manner that the first surfaces are arranged opposite to each other, wherein the first surface is the surface where the metal conductive column and the dielectric layer are located; Initial attachment at room temperature and high temperature annealing operations are sequentially performed in the bonding device to bond the metal conductive pillars at corresponding positions of the polished first body to be bonded and the polished second body to be bonded to obtain a bonded body, and a sensor is obtained based on the bonded body.

2. The microsystem manufacturing method based on copper through hole and dielectric hybrid bonding according to claim 1, characterized in that: The method of preparing the first body to be bonded and the second body to be bonded comprises: The first bonding body is obtained by sequentially performing cavity preparation, through-hole etching, copper filling, thermal oxidation strip resist photolithography and etching, and structural etching on a silicon substrate; Oxide layer etching, copper wiring and thin film deposition are sequentially performed on the silicon substrate to obtain a second body to be bonded.

3. The microsystem manufacturing method based on copper through hole and dielectric hybrid bonding according to claim 1, characterized in that: The method of obtaining a sensor based on the bonding body comprises: The bonding body is subjected to grinding and thinning, photolithography and etching, insulation layer deposition, copper filling and bump preparation in sequence to obtain the sensor.

4. The microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding according to claim 1, characterized in that: The polished metal conductive column is lower than the polished dielectric layer by a first height; the height range of the first height is 1-10 nm.

5. The microsystem manufacturing method based on copper through hole and dielectric hybrid bonding according to claim 1, characterized in that: The temperature range of the high temperature annealing operation is 200-500°C.

6. The microsystem manufacturing method based on copper through hole and dielectric hybrid bonding according to claim 1, characterized in that: The metal conductive pillar is a copper pillar.

7. The microsystem manufacturing method based on copper through hole and dielectric hybrid bonding according to claim 1, characterized in that: The dielectric layer is TaN-Ta-SiCN-SiN or BPSG.

8. The microsystem manufacturing method based on copper through hole and dielectric hybrid bonding according to claim 1, characterized in that: Before placing the first object to be bonded and the second object to be bonded into the CMP device, the method further includes: Removing the organic thin films of the first body to be bonded and the second body to be bonded respectively by using a preset reducing gas; Accordingly, placing the first object to be bonded and the second object to be bonded into a CMP device includes: The first object to be bonded from which the organic film is removed and the second object to be bonded are placed in a CMP device.

9. The microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding according to claim 8, characterized in that: The preset reducing gas includes etching gas, hydrogen and nitrogen; The organic film is any one of MS6020, carbon-based film prepared by MVD, carbon-based film prepared by ALD, and FC-based compound film.

10. A sensor, characterized in that: The bonding body is prepared by using the microsystem manufacturing method based on copper through-hole and dielectric hybrid bonding according to any one of claims 1 to 9.

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