Masking material and device for forming metal coating film

Abstract

The invention discloses a masking material and a film forming apparatus for a metal coating film. Provided are: a masking material which is capable of suppressing defects in a metal film caused by bubbles remaining on the surface of a base material; and a film-forming device for a metal film using the masking material. The masking material is provided with: a mesh portion (161); a mask portion (162) provided on the front side and the back side of the mesh portion (161) so as to be sandwiched between the electrolyte membrane and the substrate; and a penetrating portion (163) that penetrates the mask portion (162) according to a predetermined pattern and exposes the mesh portion (161). The mask material is provided with a connection path (164) which is provided in a portion of a mask portion (162) sandwiched between the electrolyte membrane and the mesh portion (161), and which connects two adjacent through portions (163), or the through portion (163) and a space facing a region of the substrate on which the predetermined pattern is not formed, so as to allow the plating solution to flow therethrough.

Description

Technical Field

[0001] The present disclosure relates to a masking material and a film-forming device for a metal film. Background Art

[0002] Inventions related to film-forming devices for forming a metal film on a substrate surface are known in the past. The metal film-forming device described in Patent Document 1 below reduces metal ions contained in a solid electrolyte membrane by applying a voltage between an anode and a substrate while the solid electrolyte membrane is pressed against the substrate, thereby partially forming a metal film on the surface of the substrate.

[0003] On the solid electrolyte membrane, a recessed portion is formed relative to a contact surface in contact with the film-forming region in such a manner that the solid electrolyte membrane contacts a film-forming region on the surface of the substrate where a metal film is to be formed and the solid electrolyte membrane does not contact any surface other than the film-forming region.

[0004] According to such a configuration, when the solid electrolyte membrane is pressed against the substrate, the contact surface of the solid electrolyte membrane is in contact with the film-forming region of the substrate. At the same time, the concave portion of the solid electrolyte membrane faces the surface other than the film-forming region (i.e., the non-film-forming region of the substrate where no film is formed), and the solid electrolyte membrane is in a non-contact state in the non-film-forming region.

[0005] When a voltage is applied between the anode and cathode (substrate) in this state, the metal ions contained in the solid electrolyte membrane move to the film-forming region (surface) of the substrate in contact with the solid electrolyte membrane, are reduced in the film-forming region of the substrate, and metal precipitates from the metal ions. On the other hand, in the non-film-forming region of the substrate facing the concave portion of the solid electrolyte membrane, since the solid electrolyte membrane is in a non-contact state, no metal precipitates. As a result, a metal film with a significant edge portion can be formed in the film-forming region of the substrate.

[0006] Prior Art Literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2016-169398 Summary of the invention

[0009] The development of a masking material disposed between the electrolyte membrane and the substrate in the solid phase electrolysis (SED) method as described above and a film forming device for a metal film using the masking material is being promoted. However, when a masking material is disposed between the electrolyte membrane and the substrate and an electrolyte is supplied to the surface of the substrate via the electrolyte membrane and the masking material, during the process of the plating solution filling the through-portion of the masking material, the air in the through-portion may remain as bubbles on the surface of the substrate. It is possible that the plating solution does not contact the portion of the substrate surface where the bubbles remain, resulting in a defect in the metal film.

[0010] The present disclosure provides a masking material capable of suppressing the damage of a metal film caused by bubbles remaining on the surface of a substrate, and a metal film forming apparatus using the masking material.

[0011] One method disclosed herein is a masking material, characterized in that it is a masking material that is arranged between an electrolyte membrane and a substrate and is used to form a metal film of a prescribed pattern on the surface of the substrate by electrolytic plating, and comprises: a mesh portion that allows a plating solution of the electrolytic plating to pass through; a mask portion that is arranged on the front and back sides of the mesh portion so as to be sandwiched between the electrolyte membrane and the substrate; a through portion that penetrates the mask portion according to the prescribed pattern so as to expose the mesh portion; and a connection path that is arranged in a portion of the mask portion that is sandwiched between the electrolyte membrane and the mesh portion and connects two adjacent through portions, or the through portion and a space facing an area of ​​the substrate where the prescribed pattern is not formed, so as to allow the plating solution to flow.

[0012] Another embodiment of the present invention is a film-forming device for a metal film, characterized in that it is a film-forming device for a metal film having the above-mentioned masking material, and comprises: a container for containing the plating solution in a state where the opening facing the substrate is covered by the electrolyte membrane; a moving mechanism for moving at least one of the container and the substrate from a state where the container and the substrate are separated so as to clamp the masking material between the electrolyte membrane and the substrate; a boosting mechanism for increasing the pressure of the plating solution contained in the container; an anode arranged inside the container facing the electrolyte membrane; a power supply for applying a voltage between the anode and the substrate; and the masking material arranged between the electrolyte membrane and the substrate.

[0013] According to the above-described aspects of the present disclosure, it is possible to provide a masking material capable of suppressing the damage of a metal film caused by bubbles remaining on the surface of a substrate, and a metal film forming apparatus using the masking material. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a schematic cross-sectional view showing one embodiment of a film-forming apparatus for a metal film according to the present disclosure.

[0015] Figure 2 It is a schematic perspective view showing one embodiment of the masking material according to the present disclosure.

[0016] Figure 3 It is along Figure 2 Schematic enlarged cross-sectional view of the masking material along line III-III.

[0017] Figure 4 It is along Figure 2 Schematic enlarged cross-sectional view of the masking material along line IV-IV.

[0018] Figure 5 It is along Figure 2 Schematic enlarged cross-sectional view of the masking material along line VV.

[0019] Figure 6 It is along Figure 2 A schematic enlarged cross-sectional view of the masking material along line VI-VI.

[0020] Description of Reference Numerals

[0021] 1 Film forming device for metal film

[0022] 11 Containment

[0023] 11b Opening

[0024] 11c Electrolyte membrane

[0025] 12 Mobile mechanism

[0026] 13. Pressure booster

[0027] 14 Anode

[0028] 15 Power Supply

[0029] 16 Masking material

[0030] 161 Network part

[0031] 162 Mask part

[0032] 163 Through section

[0033] 164 Link Road

[0034] BBase Material

[0035] L plating solution

[0036] R Region

[0037] S-Space

[0038] WWidth DETAILED DESCRIPTION

[0039] Hereinafter, one embodiment of a masking material and a metal film forming apparatus disclosed in the present invention will be described with reference to the drawings.

[0040] Figure 1 This is a schematic cross-sectional view showing one embodiment of a film-forming apparatus for a metal film according to the present disclosure. Figure 2 1 is a schematic perspective view showing an embodiment of a masking material according to the present disclosure. A metal film forming apparatus 1 of the present embodiment is an apparatus for forming a metal film on the surface of a substrate B by solid phase electrolysis (SED) using an electrolyte membrane 11 c.

[0041] The film forming apparatus 1 includes, for example, a container 11, a moving mechanism 12, a pressurizing mechanism 13, an anode 14, a power source 15, and a masking material 16. The film forming apparatus 1 also includes, for example, a mounting table 17 and a liquid circulation system 18.

[0042] The container 11 includes, for example, a container space 11a for containing the plating solution L, an opening 11b that opens on one side of the container space 11a and faces the substrate B, an electrolyte membrane 11c that covers the opening 11b, and a frame 11d that fixes the peripheral edge of the electrolyte membrane 11c. In addition, the container 11 includes, for example, a supply flow path 11e that is connected to the container space 11a and supplies the plating solution L from the liquid circulation system 18, and a discharge flow path 11f that is connected to the container space 11a and discharges the plating solution L to the liquid circulation system 18. The container 11 contains the plating solution L in a state where the opening 11b facing the substrate B is covered by the electrolyte membrane 11c. In addition, the container 11 contains and holds the anode 14 at the bottom of the container space 11a on the opposite side of the opening 11b.

[0043] The moving mechanism 12 moves at least one of the container 11 and the substrate B from a state where the container 11 and the substrate B are separated. Figure 1 As shown, the masking material 16 is sandwiched between the electrolyte membrane 11c and the substrate B. The moving mechanism 12 moves at least one of the container 11 and the substrate B from the state where the masking material 16 is sandwiched between the electrolyte membrane 11c and the substrate B, so that the container 11 and the substrate B are separated.

[0044] exist Figure 1 In the example shown, the moving mechanism 12 is composed of a linear motion actuator (linear motion actuator) that moves the container 11 up and down relative to the substrate B. The linear motion actuator is, for example, an electric actuator that converts the rotational motion of the motor into linear motion through a ball screw or the like. In addition, the moving mechanism 12 may use a hydraulic or pneumatic actuator instead of the electric actuator. As long as the container 11 and the substrate B can be moved relative to each other, the structure of the moving mechanism 12 is not particularly limited.

[0045] The pressurizing mechanism 13 is configured to increase the pressure of the plating solution L contained in the container 11. Figure 1 In the example shown, the pressurizing mechanism 13 is, for example, a pump provided in the liquid supply pipe 18b of the liquid circulation system 18. The structure of the pressurizing mechanism 13 is not particularly limited, and for example, a piston and a cylinder structure capable of increasing the pressure of the plating liquid L contained in the container 11 can be adopted. By increasing the pressure of the plating liquid L in the storage space 11a of the container 11 by the pressurizing mechanism 13, the masking material 16 can be pressed against the substrate B by the pressure of the plating liquid L.

[0046] The anode 14 is arranged facing the electrolyte membrane 11c inside the container 11. The anode 14 is, for example, a non-porous, for example, non-porous electrode made of the same metal as the metal film formed on the surface of the substrate B. The anode 14 has, for example, a block or flat plate shape. As a material of the anode 14, for example, copper can be used.

[0047] The power supply 15 applies a voltage between the anode 14 and the substrate B. More specifically, for example, the positive electrode of the power supply 15 is electrically connected to the anode 14, and the negative electrode of the power supply 15 is electrically connected to the substrate B via the mounting table 17. By applying a voltage between the anode 14 and the substrate B using the power supply 15 while the plating solution L is contained in the containing body 11, the metal ions of the anode 14 move to the surface of the substrate B via the plating solution L.

[0048] The plating solution L contains the metal of the metal film to be formed in the form of ions. As an example of the metal, copper, nickel, gold, silver or iron can be listed. The plating solution L is a solution obtained by dissolving (ionizing) these metals with an acid such as nitric acid, phosphoric acid, succinic acid, sulfuric acid or pyrophosphoric acid. As a solvent for the solution, as an example, water, alcohol, etc. can be listed. For example, in the case where the metal is copper, as the plating solution L, an aqueous solution containing copper sulfate, copper pyrophosphate, etc. can be listed.

[0049] The electrolyte membrane 11c is in contact with the plating solution L supplied to the storage space 11a of the storage body 11, so that the metal ions are impregnated (contained) inside together with the plating solution L. The electrolyte membrane 11c has flexibility. As the material of the electrolyte membrane 11c, for example, a fluorine-based resin with an ion exchange function such as Nafion (registered trademark) manufactured by DuPont can be used. Furthermore, as long as the metal ions of the plating solution L can be moved to the substrate B, the material of the electrolyte membrane 11c is not particularly limited. The film thickness of the electrolyte membrane 11c ranges from 20μm to 200μm, for example, and can be from 20μm to 60μm.

[0050] The masking material 16 is arranged between the electrolyte membrane 11c and the substrate B, and is used to form a metal film of a predetermined pattern on the surface of the substrate B by electrolytic plating. The masking material 16 includes, for example, a frame 16a and a screen mask 16b. The frame 16a is, for example, a rectangular frame-shaped member made of a metal material or a resin material and having a thickness of about 1 mm to 3 mm.

[0051] The screen mask 16b has, for example, a rectangular shape corresponding to the outer shape of the frame 16a. The peripheral edge of the screen mask 16b is fixed to, for example, one surface of the frame 16a facing the electrolyte membrane 11c. Thus, the screen mask 16b covers the opening of the frame 16a. For more detailed configuration of the masking material 16 of this embodiment, refer to Figure 2 to Figure 6 This will be described later.

[0052] The mounting table 17 is provided with a recessed portion 17b for mounting the substrate B, for example, on an end surface 17a facing the container 11. The depth of the recessed portion 17b is, for example, shallower than the thickness of the substrate B. Thus, when the substrate B is mounted on the recessed portion 17b of the mounting table 17, a portion of the substrate B protrudes toward the container 11 side from the end surface 17a of the mounting table 17. The mounting table 17 is made of, for example, a conductive material such as metal.

[0053] The substrate B is, for example, a rectangular plate-shaped member that functions as a cathode. The surface of the substrate B facing the electrolyte membrane 11c is, for example, a film-forming surface on which a metal film is formed. As long as the film-forming surface functions as a cathode, the material of the substrate B is not particularly limited. The substrate B may, for example, include an insulating substrate made of resin and a film-forming surface made of a metal such as copper formed on the surface of the insulating substrate, and a predetermined pattern may be formed by removing the film-forming surface by etching after the metal film is formed. In addition, the substrate B may also be a metal plate such as aluminum or copper.

[0054] The liquid circulation system 18 includes, for example, a tank 18a storing the plating solution L, a liquid supply pipe 18b connecting the tank 18a and the supply flow path 11e of the container 11, and a liquid discharge pipe 18c connecting the tank 18a and the discharge flow path 11f of the container 11. In addition, the liquid circulation system 18 includes, for example, a pressure regulating valve 18d provided on the liquid discharge pipe 18c.

[0055] A pump as a pressure-increasing mechanism 13 is provided in the middle of the liquid supply pipe 18b. By driving the pressure-increasing mechanism 13, the plating liquid L is pressure-sent from the tank 18a to the supply flow path 11e of the container 11 via the liquid supply pipe 18b, and the accommodating space 11a of the container 11 is filled with the plating liquid L. Then, the plating liquid L is discharged from the accommodating space 11a of the container 11 via the discharge flow path 11f, and returned to the tank 18a via the liquid discharge pipe 18c. The pressure regulating valve 18d regulates the pressure of the plating liquid L in the accommodating space 11a of the container 11 to a predetermined pressure.

[0056] Below, refer to Figure 2 to Figure 6 , the structure of the masking material 16 of this embodiment is described in more detail. Figure 2 It is a schematic perspective view showing a screen mask 16b which is one embodiment of the masking material 16 according to the present disclosure. Figure 3 to Figure 6 are respectively along Figure 2 A schematic enlarged cross-sectional view of the screen mask 16b along the line III-III to the line VI-VI. Figure 2 to Figure 6 In each of the drawings, in order to facilitate understanding of the structure of the masking material 16 of the present embodiment, the magnification of the thickness direction of the masking material 16 is increased compared to the actual one.

[0057] The screen mask 16b includes, for example, a mesh portion 161, a mask portion 162, a through portion 163, and a connection path 164. The mesh portion 161 is a mesh sheet formed by intersecting a plurality of wires made of metal such as stainless steel or resin such as polyester, and has a plurality of minute openings through which the plating solution L passes.

[0058] The mask portion 162 is provided on the front side and the back side of the mesh portion 161, for example. Figure 1 As shown, the mask 162 is sandwiched between the electrolyte membrane 11c covering the opening 11b of the container 11 and the substrate B. As the material of the mask 162, an elastic material such as silicone rubber can be used. The mask 162 is provided at the center portion inside the peripheral portion of the mesh 161, for example.

[0059] In addition, the mask portion 162 is provided on the front and back sides of the mesh portion 161 in a frame-like manner, for example, over the entire periphery of the mesh portion 161. In this case, the screen mask 16b is fixed to the mesh portion 161 by means of the frame-like mask portion 162 provided on the periphery of the mesh portion 161. Figure 1 The mask portion 162 may not be provided on the peripheral edge of the mesh portion 161. In this case, the peripheral edge of the mesh portion 161 is fixed to the mesh portion 161 by means of an adhesive or the like. Figure 1 The surface of the frame 16a shown faces the electrolyte membrane 11c.

[0060] The through portion 163 penetrates the mask portion 162 according to a predetermined pattern of a metal film formed on the surface of the substrate B, for example, to expose the mesh portion 161. Figure 2 As shown, the through portion 163 is formed in an elongated shape corresponding to the shape of a wiring pattern formed on the surface of the substrate B, for example.

[0061] The connection path 164 is provided, for example, at a portion of the mask portion 162 sandwiched between the electrolyte membrane 11c covering the opening 11b of the container 11 and the mesh portion 161. The connection path 164 connects two adjacent through portions 163 provided in the mask portion 162, or the through portion 163 and a space S facing a region R on the substrate B where a predetermined pattern is not formed, thereby allowing the plating solution L to flow. In the present embodiment, the region R where a predetermined pattern is not formed is, for example, a region on the outside of the mask portion 162 provided in the center of the mesh portion 161 and facing the peripheral edge of the mesh portion 161 exposed from the mask portion 162.

[0062] In this embodiment, the connection path 164 is a groove provided on the surface of the mask portion 162 facing the electrolyte membrane 11c. The connection path 164 has, for example, a rectangular cross-sectional shape. The cross-sectional shape of the connection path 164 is not particularly limited, and any shape such as a semicircular shape or a wedge shape may be adopted.

[0063] like Figure 5 As shown, the width W of the connection path 164 is, for example, not less than 100 μm and not more than 500 μm. Furthermore, the connection path 164 is not limited to a groove as long as it is a connection path that connects two adjacent through-portions 163 or a through-portion 163 and a space S facing a region R of the substrate B where a predetermined pattern is not formed so as to flow the plating solution L. The connection path 164 may be, for example, a through hole provided in the mask portion 162.

[0064] Hereinafter, the functions of the metal film forming apparatus 1 and the masking material 16 according to the present embodiment will be described.

[0065] As described above, the film forming device 1 of the metal film of the present embodiment includes a container 11, a moving mechanism 12, a pressurizing mechanism 13, an anode 14, a power supply 15, and a masking material 16. The container 11 contains a plating solution L in a state where an opening 11b facing the substrate B is covered by an electrolyte membrane 11c. The moving mechanism 12 moves at least one of the container 11 and the substrate B from a state where the container 11 and the substrate B are separated, thereby sandwiching the masking material 16 between the electrolyte membrane 11c and the substrate B. The pressurizing mechanism 13 increases the pressure of the plating solution L contained in the container 11. The anode 14 is arranged in the interior of the container 11 so as to face the electrolyte membrane 11c. The power supply 15 applies a voltage between the anode 14 and the substrate B. The masking material 16 is arranged between the electrolyte membrane 11c and the substrate B.

[0066] The masking material 16 of the present embodiment is arranged between the electrolyte membrane 11c and the substrate B, and is used to form a metal film of a predetermined pattern on the surface of the substrate B by electrolytic plating. In addition, the masking material 16 of the present embodiment includes a mesh portion 161, a mask portion 162, a through portion 163, and a connection path 164. The mesh portion 161 allows the plating solution L of the electrolytic plating to pass through. The mask portion 162 is provided on the front side and the back side of the mesh portion 161, so as to be sandwiched between the electrolyte membrane 11c and the substrate B. The through portion 163 penetrates the mask portion 162 according to the predetermined pattern of the metal film to expose the mesh portion 161. The connection path 164 is provided in a part of the mask portion 162 sandwiched between the electrolyte membrane 11c and the mesh portion 161, and connects two adjacent through portions 163, or the through portion 163 and a space S facing the region R of the substrate B where the predetermined pattern is not formed, so as to allow the plating solution L to flow.

[0067] According to such a configuration, the metal film forming device 1 of this embodiment is as follows: Figure 1 As shown, the masking material 16 is sandwiched between the electrolyte membrane 11c covering the opening 11b of the container 11 and the substrate B, and the plating solution L is contained in the container 11 and the pressure is raised to a predetermined pressure by the pressurizing mechanism 13. Figure 3 , Figure 4 and Figure 6 As shown, the electrolyte membrane 11 c receives pressure from the plating solution L in the container 11 and bends along the concavo-convex shapes of the mask portion 162 and the through portion 163 of the masking member 16 .

[0068] Then, the plating solution L passes through the electrolyte membrane 11c and the mesh portion 161 exposed in the through portion 163 of the masking material 16 and fills the through portion 163. Figure 6 As shown by the middle dotted line, the air A in the through-portion 163 present near the substrate B tries to pass through the mesh portion 161 and move toward the electrolyte membrane 11c. However, the electrolyte membrane 11c is bent toward the inside of the opening of the through-portion 163 by the pressure of the plating solution L in the container 11, for example, and a part of the electrolyte membrane 11c comes into contact with the mesh portion 161.

[0069] Therefore, when the masking material 16 does not have the connecting path 164, the space between the electrolyte membrane 11c in the through-portion 163 and the mesh portion 161 becomes narrow. Figure 4 and Figure 6The air A near the substrate B shown by the middle dotted line has no place to escape, and bubbles may remain on the surface of the substrate B. In contrast, the masking material 16 of this embodiment has a connecting path 164, which allows the plating solution L to flow between two adjacent through-portions 163 or between the through-portion 163 and the space S facing the region R of the substrate B where the predetermined pattern is not formed.

[0070] as a result, Figure 4 and Figure 6 The air A near the substrate B in the through-portion 163 shown by the middle dotted line passes through the mesh portion 161 and moves to the gap between the mesh portion 161 and the electrolyte membrane 11c, as shown in FIG. Figure 3 and Figure 5 As shown, the air A flows into the connection passage 164 together with the plating solution L. The air A flowing into the connection passage 164 moves together with the plating solution L toward the adjacent through-portion 163 or the space S facing the region R of the substrate B where the predetermined pattern is not formed.

[0071] In this way, the air A near the substrate B in the through-portion 163 can be moved to the space S between the mesh portion 161 and the electrolyte membrane 11c of the adjacent through-portion 163, or to the region R facing the substrate B where the predetermined pattern is not formed, via the connection path 164. Therefore, according to the masking material 16 and the metal film forming apparatus 1 of the present embodiment, it is possible to suppress the bubbles from remaining on the surface of the substrate B in the through-portion 163, and it is possible to suppress the metal film from being damaged due to the bubbles remaining on the surface of the substrate B.

[0072] In the masking material 16 of the present embodiment, the connection path 164 is a groove provided on the surface of the mask portion 162 facing the electrolyte membrane 11c. With such a configuration, the connection path 164 can be easily formed on the mask portion 162 of the masking material 16 by, for example, a general screen manufacturing technique using emulsion.

[0073] In the masking material 16 of the present embodiment, the width W of the connection path 164 is not less than 100 μm and not more than 500 μm. Figure 5 As shown, a space for passing the air A can be ensured between the mesh portion 161 and the electrolyte membrane 11 c , and bubbles can be prevented from remaining near the surface of the substrate B more effectively.

[0074] Although the embodiments of the mask and the film forming apparatus according to the present disclosure are described in detail above using the drawings, the specific configuration is not limited to the embodiments, and even if there are design changes within the scope not departing from the gist of the present disclosure, they are also included in the present disclosure.

[0075] The following describes embodiments of the masking material according to the present disclosure.

[0076] [Example]

[0077] The masking material was prepared by forming a mask part using polysiloxane rubber on the front and back sides of a mesh part made of LCP resin with a wire diameter of 20 μm and a mesh of 420 mesh, and forming a through part and a groove-shaped connection path in the mask part. In addition, the thickness of the mask part was set to 20 μm for the part arranged between the electrolyte membrane and the mesh part, and the thickness of the part arranged between the mesh part and the substrate was set to 30 μm.

[0078] Here, masking materials of Examples 1 to 3 having connection paths with widths of 100 μm, 250 μm, and 500 μm, respectively, and a masking material of a comparative example having no connection paths were prepared. Next, a square copper (Cu) substrate having a thickness of 0.9 mm and a single side length of 7.8 cm was prepared, and the substrate was subjected to cathodic electrolytic degreasing at 55° C. for 1 minute using IC-200RM manufactured by JCU Corporation, and then the substrate was washed with pure water for 1 minute. Furthermore, the substrate was pickled by immersing it in 10% dilute sulfuric acid at room temperature for 1 minute, and then the substrate was washed with pure water for 1 minute.

[0079] Then, a metal film with a thickness of 5 μm was formed on the surface of the substrate by solid phase electrolysis (SED) using a device having the same structure as the metal film forming device described in the previous embodiment. The film forming conditions are: film forming temperature: 42°C; plating solution: 1 mol / l copper sulfate + 0.2 mol / l sulfuric acid; anode: phosphorus copper plate; anode-cathode electrode distance: 2 mm; pressure: 0.6 MPa; film forming area: 38 cm 2 / Substrate size 61.4cm 2 ; Current: 7ASD.

[0080] The number of defective (non-precipitated) portions of the metal films formed using the masking materials of Examples 1 to 3 and Comparative Example was counted, and the results are summarized in Table 1 below.

[0081] Table 1

[0082] Example 1 Example 2 Example 3 Comparative Example Missing part(pcs) 1 2 8 32 evaluate good good good -

[0083] The number of defective parts of the metal film formed by using the masking material of the comparative example without the connection path is 32. In contrast, the number of defective parts of the metal film formed by using the masking materials of Examples 1 to 3 having groove-shaped connection paths with widths of 100 μm, 250 μm, and 500 μm, respectively, is 1 to 8. That is, by using the masking materials of Examples 1 to 3, the number of defective parts is reduced to 1 / 4 to 1 / 32 of that of the comparative example, compared with the case where the masking material of the comparative example is used.

Claims

1. A masking material, characterized in that: A masking material is disposed between an electrolyte membrane and a substrate and is used to form a metal film of a predetermined pattern on the surface of the substrate by electrolytic plating, comprising: a mesh portion through which the electrolytic plating solution passes; a mask portion provided on the front side and the back side of the mesh portion so as to be sandwiched between the electrolyte membrane and the substrate; The mask portion is penetrated according to the prescribed pattern to expose the penetration portion of the mesh portion; and A connection path is provided at a portion of the mask portion sandwiched between the electrolyte membrane and the mesh portion, and connects two adjacent through portions, or a space between the through portion and a region of the substrate facing the substrate where the predetermined pattern is not formed, so as to allow the plating solution to flow.

2. The masking material according to claim 1, characterized in that: The connection path is a groove provided on a surface of the mask portion facing the electrolyte membrane.

3. The masking material according to claim 2, characterized in that: The connection path has a width of 100 μm or more and 500 μm or less.

4. A metal film forming device, comprising: a container for containing the plating solution in a state where an opening facing the substrate is covered by the electrolyte membrane; a moving mechanism for moving at least one of the container and the substrate from a state where the container and the substrate are separated so as to sandwich the masking material between the electrolyte membrane and the substrate; a pressurizing mechanism for increasing the pressure of the plating solution contained in the containing body; an anode disposed inside the housing so as to face the electrolyte membrane; a power source for applying a voltage between the anode and the substrate; and The masking material is disposed between the electrolyte membrane and the substrate.

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