Gas diffusion assembly, gas inlet device and substrate processing equipment

Abstract

The invention belongs to the technical field of semiconductor manufacturing equipment, and particularly relates to a gas diffusion assembly, a gas inlet device and substrate processing device.The gas diffusion assembly comprises a guider, the first end of the guider in the length direction is used for being connected with a gas distributor, and the second end of the guider in the length direction is used for being connected with a reaction chamber; the guider comprises a middle flow channel and two outer side flow channels, the two outer side flow channels are arranged on the two opposite sides of the middle flow channel in the width direction respectively, the outer side flow channels and the middle flow channel extend in parallel in the length direction, the height of the outer side flow channels is equal to that of the middle flow channel, and the width ratio of the outer side flow channels to the middle flow channel is 40 + / -10: 20 + / -20. As the middle flow channel is a narrow flow channel relative to the outer side flow channel, the gas pressure in the central area of the substrate can be increased or reduced by increasing or reducing the gas inlet pressure of the middle flow channel without influencing the gas pressure in the areas on the two sides of the substrate, so that the reaction gas in the reaction chamber is uniformly distributed, and the thickness uniformity of a deposited or epitaxially grown film layer is improved.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor manufacturing equipment, and specifically relates to a gas diffusion component, an air intake device and a substrate processing equipment. Background Art

[0002] Epitaxial Growth (EPI) is a technology that grows single crystal thin films with the same crystal structure and orientation on a single crystal substrate. During the epitaxial growth process, in order to ensure uniform film thickness, the gas flow field in the reaction chamber needs to be strictly controlled to make the distribution of the reaction gas above the substrate as uniform as possible.

[0003] The existing substrate processing equipment for epitaxial growth film layer includes an air intake device, a reaction chamber and an exhaust device, and the air intake device and the exhaust device are arranged on two horizontally opposite sides of the reaction chamber. The reaction gas introduced by the air intake device includes a middle airflow with a wide distribution and uniform flow rate and an outer airflow with a narrow distribution on both sides of the middle airflow for adjusting the edge flow rate. The distribution of the reaction gas above the substrate is controlled by adjusting the flow rates of the middle airflow and the outer airflow respectively, so that the epitaxial growth rate on the substrate is as uniform as possible.

[0004] However, since the distribution width of the middle airflow is large and the middle airflow and the outer airflow are very close, the airflows quickly mix with each other after entering the reaction chamber, making it difficult to control the uniform distribution of the reaction gas above the substrate. For example, if the flow rate of the middle airflow is increased, the flow rate of the outer airflow will also increase due to gas mixing, and the distribution of the reaction gas will become uneven. Summary of the invention

[0005] The purpose of the present application is to provide a gas diffusion component, an air intake device and a substrate processing device to improve the problem of uneven distribution of reaction gases and improve the uniformity of thickness of deposited or epitaxially grown film layers.

[0006] In order to achieve the above-mentioned purpose, the present application provides a gas diffusion assembly, which is applied to an air intake device, the air intake device also includes a gas distributor, the air intake device is used to intake air into a reaction chamber, the gas diffusion assembly includes a guide, the first end of the guide in the length direction is used to connect the gas distributor, the second end of the guide in the length direction is used to connect the reaction chamber, the guide includes a middle flow channel and an outer flow channel, the two outer flow channels are respectively arranged on two opposite sides of the middle flow channel in the width direction, the outer flow channel and the middle flow channel both extend parallel to the length direction, and the width ratio of the outer flow channel to the middle flow channel is 40±10:20±20.

[0007] Optionally, the width of the outer flow channel is greater than the width of the middle flow channel.

[0008] Optionally, the width ratio of the outer flow channel to the middle flow channel is 40±5:20±10.

[0009] Optionally, the gas diffusion assembly also includes a diffusion plate component, which is arranged in at least one of the outer flow channel and the middle flow channel. The diffusion plate component includes n diffusion plates arranged at intervals along the length direction of the guide, n≥2, and first holes are arranged on the diffusion plate. From the first end to the second end in the length direction of the guide, the number of the first holes on the diffusion plate increases and the hole diameter decreases.

[0010] Optionally, when a plurality of the first holes are provided on the diffusion plate, the plurality of the first holes are evenly spaced apart along the width direction.

[0011] Optionally, in the width direction, the spacing between adjacent first holes in the middle flow channel is 10±1 mm, the spacing between adjacent first holes in the outer flow channel is 20±1 mm, and the diameter of the first hole is 1.5 mm to 4 mm.

[0012] Optionally, a mixing zone is provided at the first end of the guide, and the mixing zone is used to connect to the gas distributor, and the outer flow channel and the middle flow channel are both connected to the mixing zone.

[0013] Optionally, the gas diffusion assembly also includes a flow equalizer, which is arranged between the guide and the gas distributor, and the flow equalizer includes an outer portion corresponding to the outer flow channel and a middle portion corresponding to the middle flow channel, the middle portion includes at least one second hole, and the outer portion includes at least one third hole, and the distance between the second hole and the third hole is greater than 3 cm.

[0014] The present application also provides an air intake device for intake air into the reaction chamber, the air intake device comprising:

[0015] A gas distributor, the gas distributor comprising an air inlet end and an air outlet end, the air outlet end comprising a middle air outlet and an outer air outlet, the two outer air outlets being respectively arranged on opposite sides of the middle air outlet in a width direction, the air inlet end comprising a first pipe interface and a second pipe interface, the first pipe interface being communicated with the middle air outlet, and the second pipe interface being communicated with the outer air outlet;

[0016] The gas diffusion component, the first end of the guide in the length direction of the gas diffusion component is connected to the exhaust end, the middle flow channel corresponds to the middle exhaust port, and the outer flow channel corresponds to the outer exhaust port.

[0017] The present application also provides a substrate processing device, comprising:

[0018] Reaction chamber;

[0019] A susceptor is disposed in the reaction chamber, the susceptor is used to hold the substrate, and the susceptor can rotate synchronously with the substrate;

[0020] The air intake device is arranged at one side of the reaction chamber, and is used to intake air along a first direction parallel to the substrate;

[0021] The auxiliary air intake device is used for intake of air along a second direction parallel to the substrate, wherein the second direction is perpendicular to the first direction.

[0022] The gas diffusion assembly, air intake device and substrate processing equipment disclosed in the present application have the following beneficial effects:

[0023] In the present application, the gas diffusion assembly includes a guide, the first end of the guide in the length direction is used to connect to the gas distributor, the second end of the guide in the length direction is used to connect to the reaction chamber, the guide includes a middle flow channel and an outer flow channel, the two outer flow channels are respectively arranged on two opposite sides of the middle flow channel in the width direction, the outer flow channel and the middle flow channel are both extended in parallel along the length direction, and the width ratio of the outer flow channel to the middle flow channel is 40±10:20±20. Since the middle flow channel is a narrow flow channel relative to the outer flow channel, by increasing or decreasing the inlet pressure of the middle flow channel, the gas pressure in the center area of ​​the substrate can be increased or decreased without affecting the gas pressure in the areas on both sides of the substrate, so that the reaction gas in the reaction chamber is evenly distributed, and the thickness uniformity of the deposited or epitaxially grown film layer is improved.

[0024] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0025] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1 It is a schematic diagram of the structure of the gas diffusion assembly in an embodiment of the present application.

[0028] Figure 2 yes Figure 1 Schematic diagram of the cross-section at the AA position.

[0029] Figure 3 It is a structural schematic diagram of a substrate processing device in an embodiment of the present application.

[0030] FIG. 4(A) is a schematic diagram of the pressure distribution of the reaction gas when the reaction gas is uniformly introduced into the inner and outer flow channels.

[0031] FIG. 4(B) is a schematic diagram of the pressure distribution of the reaction gas when the reaction gas is introduced unevenly into the inner and outer flow channels.

[0032] FIG. 4(C) is a schematic diagram showing that the reaction gas in FIG. 4(A) is uniformly dispersed by rotating the wafer.

[0033] FIG. 4(D) is a schematic diagram showing that the reaction gas in FIG. 4(B) is uniformly dispersed by rotating the wafer.

[0034] FIG. 4(E) is a schematic diagram of the total gas distribution on the wafer in FIG. 4(C).

[0035] FIG. 4(F) is a schematic diagram of the total gas distribution on the wafer in FIG. 4(D).

[0036] FIG. 5(A) is a schematic diagram of the pressure distribution of the reaction gas in the conventional reaction chamber when there is less intermediate air intake.

[0037] FIG. 5(B) is a schematic diagram of the pressure distribution of the reaction gas in the existing reaction chamber when there is more intermediate air intake

[0038] FIG. 6(A) is a schematic diagram of reaction gas pressure distribution when there is less intermediate air intake in an embodiment of the present application.

[0039] FIG. 6(B) is a schematic diagram of the pressure distribution of the reaction gas when there is more intermediate air intake in the embodiment of the present application.

[0040] Figure 7 It is a schematic diagram of the decomposition of the guide in the embodiment of the present application.

[0041] Figure 8 It is a schematic diagram of the structure of the gas distributor in the embodiment of the present application.

[0042] Description of reference numerals:

[0043] 10. Air intake device;

[0044] 100, gas diffusion assembly; 110, guide; 111, middle flow channel; 112, outer flow channel; 113, mixing zone; 114, guide block;

[0045] 120, diffuser plate component; 121, diffuser plate; 1211, first hole;

[0046] 130, flow equalizer; 131, second hole; 132, third hole;

[0047] 200, gas distributor; 211, middle exhaust port; 212, outer exhaust port; 221, first pipe interface; 222, second pipe interface;

[0048] 20. Reaction chamber; 30. Base; 40. Auxiliary air intake device; 50. Exhaust device. DETAILED DESCRIPTION

[0049] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of the example embodiments to those skilled in the art.

[0050] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0051] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0052] See also Figures 1 to 3 As shown, the gas diffusion assembly 100 in this embodiment is applied to the air intake device 10, and the air intake device 10 is used to intake air into the reaction chamber 20. The gas diffusion assembly 100 includes a guide 110, and the air intake device 10 also includes a gas distributor 200. The first end of the guide 110 in the length direction is used to connect to the gas distributor 200, and the second end of the guide 110 in the length direction is used to connect to the reaction chamber 20.

[0053] The guide 110 includes a middle channel 111 and an outer channel 112, and the two outer channels 112 are respectively arranged on opposite sides of the middle channel 111 in the width direction. The outer channels 112 and the middle channel 111 extend in parallel along the length direction, and the width ratio of the outer channels 112 to the middle channel 111 is 40±10:20±20, that is, the middle channel 111 is a narrow channel relative to the outer channels 112. In the height direction, the outer channels 112 and the middle channel 111 can be equal in height and at the same height position.

[0054] In the prior art, the width ratio of the outer flow channel to the middle flow channel is about 20:60, and the width of the outer flow channel of the guide is smaller than the width of the middle flow channel. The middle flow channel is used to introduce gas with uniform flow distribution into the reaction chamber, and the outer flow channel is used to introduce gas to adjust the gas flow at the edge of the reaction chamber. The gas flow in the middle flow channel and the outer flow channel can be adjusted independently of each other.

[0055] When the existing substrate processing equipment processes the substrate, the reaction gas introduced into the reaction chamber through the middle flow channel is initially evenly distributed (Figure 4 (A)). It is difficult to provide evenly distributed reaction gas, and under the action of the wafer rotation, the uniformity of the reaction gas originally introduced evenly decreases (Figure 4 (C)), making the overall distribution of gas on the wafer uneven (Figure 4 (E)), and finally the film layer deposited on the wafer is uneven. Furthermore, for example Figure 5(A) to Figure 5(B) As shown in the figure, in order to achieve uniform gas distribution, when the inlet flow rate of the middle flow channel is increased, the distance between the middle flow and the outer flow is very close, and the gases quickly mix with each other after entering the reaction chamber. The middle flow distribution is wider and has a greater impact, resulting in an increase in the gas pressure in the areas on both sides of the substrate, resulting in uneven distribution of the reaction gas in the reaction chamber. In other words, although the reaction gas introduced into the reaction chamber is initially uniform, increasing or decreasing the inlet pressure of the middle flow channel cannot make the reaction gas in the reaction chamber uniformly distributed.

[0056] In this embodiment, when the substrate processing device processes a substrate, the reaction gas introduced into the outer flow channel 112 and the reaction gas introduced into the middle flow channel 111 may not be uniform ( FIG. 4(B) ). As the wafer rotates, the total distribution of the two outer gas flows and the distribution of the middle gas flow both change toward uniformity ( FIG. 4(D) ). Further, for example Figures 6(A) to 6(B) As shown in the figure, in order to achieve uniform gas distribution, when increasing the intake flow rate of the middle flow channel, the adjustment of the middle flow channel has little effect on the change of gas pressure in the areas on both sides of the substrate due to the narrow distribution of the middle flow channel. Therefore, by adjusting the narrow middle flow channel and rotating the wafer, it is possible to achieve uniform gas distribution on the wafer without providing uniformly distributed gas (Figure 4 (F)), and reduce the difficulty of gas introduction.

[0057] For example, if the gas pressure in the center area of ​​the substrate is less than the gas pressure in the areas on both sides of the substrate in the width direction of the guide 110, that is, the reaction gas distribution in the reaction chamber 20 is uneven, as shown in FIG6(A), resulting in a decrease in the uniformity of the deposited or epitaxially grown film layer. As shown in FIG6(B), by increasing the inlet pressure of the middle flow channel 111, the gas pressure in the center area of ​​the substrate can be increased, and the width ratio of the outer flow channel 112 to the middle flow channel 111 is 40±10:20±20. The middle flow channel 111 is a narrow flow channel. The reaction gas introduced into the middle flow channel 111 will only increase the gas pressure in the center area of ​​the substrate, and has little effect on the gas pressure in the areas on both sides of the substrate, so that the reaction gas distribution in the reaction chamber 20 can be uniform. In other words, by increasing or decreasing the inlet pressure of the middle flow channel 111, the reaction gas distribution in the reaction chamber 20 can be uniform.

[0058] Furthermore, when the substrate processing device in this embodiment processes a substrate, the gas initially introduced into the reaction chamber is uneven, and thus an auxiliary gas flow can be added to improve the uniformity of gas distribution at the edge of the wafer. In one example, the inlet direction of the auxiliary gas flow is perpendicular to the inlet direction of the outer flow channel 112 and the middle flow channel 111.

[0059] In this embodiment, the gas diffusion assembly 100 includes a guide 110, the first end of the guide 110 in the length direction is used to connect to the gas distributor 200, the second end of the guide 110 in the length direction is used to connect to the reaction chamber 20, the guide 110 includes a middle flow channel 111 and an outer flow channel 112, the two outer flow channels 112 are respectively arranged on two opposite sides of the middle flow channel 111 in the width direction, the outer flow channels 112 and the middle flow channel 111 are both extended in parallel along the length direction, and the width ratio of the outer flow channel 112 to the middle flow channel 111 is 40±10:20±20. Since the middle flow channel 111 is a narrow flow channel relative to the outer flow channel 112, by increasing or decreasing the inlet pressure of the middle flow channel 111, the gas pressure in the center area of ​​the substrate can be increased or decreased without affecting the gas pressure in the areas on both sides of the substrate, so that the reaction gas in the reaction chamber 20 is evenly distributed, and the thickness uniformity of the deposited or epitaxially grown film layer is improved.

[0060] In some embodiments, the width of the outer channel 112 is greater than the width of the middle channel 111 .

[0061] The width of the outer channel 112 is greater than that of the middle channel 111 , which can avoid increasing or decreasing the inlet pressure of the middle channel 111 , which would affect the gas pressure in the areas on both sides of the substrate and further lead to uneven distribution of the reaction gas in the reaction chamber 20 .

[0062] In some embodiments, the width ratio of the outer channel 112 to the middle channel 111 is 40±5:20±10. For example, the width ratio of the outer channel 112 to the middle channel 111 is 40:20.

[0063] When the width of the outer channel 112 is twice or more than twice the width of the middle channel 111, increasing or decreasing the inlet pressure of the middle channel 111 has little effect on the gas pressure in the areas on both sides of the substrate, thereby making the reaction gas in the reaction chamber 20 evenly distributed.

[0064] See also Figure 1 and Figure 2 As shown, the gas diffusion assembly 100 further includes a diffusion plate component 120, and the diffusion plate component 120 is disposed in at least one of the outer flow channel 112 and the middle flow channel 111. Preferably, the diffusion plate component 120 can be disposed in each outer flow channel 112 and the middle flow channel 111. The diffusion plate component 120 includes n diffusion plates 121 spaced apart along the length direction of the guide 110, where n≥2. For example, the diffusion plate component 120 includes 3 diffusion plates 121 spaced apart along the length direction of the guide 110.

[0065] The diffuser plate 121 is provided with first holes 1211 . From the first end to the second end in the length direction of the guide 110 , ie, in the gas flow direction, the number of the first holes 1211 on the diffuser plate 121 increases and the hole diameter decreases.

[0066] The diffusion plate component 120 includes a plurality of diffusion plates 121 spaced apart along the length direction of the guide 110, and along the gas flow direction, the number of first holes 1211 on the diffusion plate 121 increases and the aperture decreases. This design can evenly disperse the airflow, and the diffusion plates 121 are spaced apart, so that the gas can be mixed in the space between the diffusion plates 121, further improving the uniformity of the distribution of the reaction gas entering the reaction chamber 20.

[0067] In some embodiments, when a plurality of first holes 1211 are disposed on the diffusion plate 121 , the plurality of first holes 1211 are evenly spaced apart along the width direction.

[0068] As the number of first holes 1211 on the diffuser plate 121 increases and the aperture decreases, from the first end to the second end in the length direction of the guide 110, at least two first holes 1211 are set on the second diffuser plate 121, and at least three first holes 1211 are set on the third diffuser plate 121. The multiple first holes 1211 are evenly spaced along the width direction, which is beneficial to further evenly disperse the airflow and improve the uniformity of the reaction gas distribution in the reaction chamber 20.

[0069] In some embodiments, the diffuser assembly 120 includes three diffusers 121 spaced apart along the length direction of the guide 110. From the first end to the second end in the length direction of the guide 110, a first hole 1211 is disposed on the first diffuser 121. The first hole 1211 may be disposed in the center, that is, located in the middle position in the width direction of the middle channel 111 or the outer channel 112 where it is located and located in the middle position in the height direction of the middle channel 111 or the outer channel 112 where it is located. The diameter of the first hole 1211 on the first diffuser 121 is 4±0.5 mm, for example, 3.5 mm, 4 mm, and 4.5 mm.

[0070] Two first holes 1211 are arranged on the second diffuser plate 121. In the height direction, the two first holes 1211 are arranged in the center of the middle channel 111 or the outer channel 112 where they are located. In the width direction, the two first holes 1211 are symmetrical with the middle section of the middle channel 111 or the outer channel 112 where they are located. The diameter of the first holes 1211 on the second diffuser plate 121 is 2 mm to 2.8 mm. In the middle channel 111: the spacing between the two first holes 1211 is 10±1 mm, such as 9 mm, 10 mm and 11 mm; in the outer channel 112: the spacing between the two first holes 1211 is 20±1 mm, such as 19 mm, 20 mm and 21 mm.

[0071] Three first holes 1211 are arranged on the third diffuser plate 121. In the height direction, the three first holes 1211 are arranged in the center of the middle channel 111 or the outer channel 112 where they are located. In the width direction, the three first holes 1211 are symmetrical with the middle section of the middle channel 111 or the outer channel 112 where they are located, that is, the first hole 1211 in the center passes through the middle section, and the other two first holes 1211 are located on both sides of the middle section. The diameter of the first hole 1211 on the third diffuser plate 121 is 1.5 mm to 2.3 mm. In the middle channel 111: the distance between the two first holes 1211 is 10±1 mm, such as 9 mm, 10 mm and 11 mm; in the outer channel 112: the distance between the two first holes 1211 is 20±1 mm, such as 19 mm, 20 mm and 21 mm.

[0072] Along the gas flow direction, the number of first holes 1211 on the diffusion plate 121 increases and the aperture decreases, and a suitable hole spacing is set according to the flow channel width, so that the gas is gradually dispersed, which is beneficial to further evenly disperse the gas flow and improve the uniformity of the reaction gas distribution in the reaction chamber 20.

[0073] It should be noted that the arrangement of the first holes 1211 in the middle channel 111 and the arrangement of the first holes 1211 in the outer channel 112 may be different. For example, the number, size or position of the first holes 1211 in the middle channel 111 and the first holes 1211 in the outer channel 112 are different. In the width direction, the distance between the middle section of the outer channel 112 and the middle section of the middle channel 111 is about 11 cm, and the first holes 1211 in the outer channel 112 may also be symmetrical with respect to a plane 11 cm away from the middle section of the middle channel 111.

[0074] In the above embodiments, the first holes 1211 on the diffuser plate 121 are arranged in a row in the height direction, but it is not limited thereto. In some embodiments, the first holes 1211 on the diffuser plate 121 may be arranged in multiple rows, depending on the specific situation.

[0075] In addition, the diffuser plate 121 can be fixedly connected to the guide 110, but is not limited thereto. The diffuser plate 121 can also be detachably connected to the guide 110, depending on the specific situation. When the diffuser plate 121 is detachably connected to the guide 110, the spacing between adjacent diffusers 121 and the number, size and position of the first holes 1211 on the diffuser plate 121 can be adjusted.

[0076] See also Figures 1 to 3 As shown, a mixing zone 113 is disposed at the first end of the guide 110 . The mixing zone 113 is used to connect to the gas distributor 200 . The outer flow channel 112 and the middle flow channel 111 are both connected to the mixing zone 113 .

[0077] The mixing zone 113 is arranged at the first end of the guide 110. The reaction gas from the gas distributor 200 is first mixed in the mixing zone 113 and then introduced into the reaction chamber 20 from the outer flow channel 112 and the middle flow channel 111 respectively, so that the two reaction gases introduced by the gas distributor 200 can be mixed more evenly.

[0078] See also Figures 1 to 3 As shown, the gas diffusion assembly 100 further includes a flow plate 130, which is disposed between the guide 110 and the gas distributor 200. The flow plate 130 includes an outer portion corresponding to the outer flow channel 112, and a middle portion corresponding to the middle flow channel 111, the middle portion includes at least one second hole 131, and the outer portion includes at least one third hole 132, and the distance between the second hole 131 and the third hole 132 is greater than 3 cm.

[0079] The flow plate 130 is disposed between the guide 110 and the gas distributor 200. The reaction gas from the gas distributor 200 is first evenly dispersed through the flow plate 130 and then enters the mixing area 113 for mixing, so that the two reaction gases introduced by the gas distributor 200 can be mixed more evenly.

[0080] For example, each flow channel is provided with one second hole 131 or one third hole 132, that is, the middle portion includes one second hole 131, and the outer portion includes one third hole 132. The diameters of the second hole 131 and the third hole 132 are 4±0.5 mm, for example, 3.5 mm, 4 mm, and 4.5 mm. The second hole 131 can be centrally arranged relative to the middle flow channel 111; the third hole 132 can be centrally arranged relative to the outer flow channel 112.

[0081] In some embodiments, two second holes 131 or third holes 132 are correspondingly arranged in each flow channel, that is, the middle portion includes two second holes 131, and the outer portion includes two third holes 132. The diameters of the second holes 131 and the third holes 132 are 4±0.5 mm, for example, 3.5 mm, 4 mm, and 4.5 mm. In the height direction, the two second holes 131 can be centrally arranged relative to the middle flow channel 111, and the two third holes 132 can be centrally arranged relative to the outer flow channel 112; in the width direction, the two second holes 131 can be symmetrically arranged relative to the middle section of the middle flow channel 111, and the two third holes 132 can be symmetrically arranged relative to the middle section of the outer flow channel 112.

[0082] In some embodiments, three or more second holes 131 or third holes 132 are arranged corresponding to each flow channel, that is, the middle part includes three or more second holes 131, and the outer part includes three or more third holes 132. The diameters of the second holes 131 and the third holes 132 are both 2 mm to 3 mm. In the height direction, the plurality of second holes 131 can be centered relative to the middle flow channel 111, and the plurality of third holes 132 can be centered relative to the outer flow channel 112. In the width direction, the plurality of second holes 131 are arranged at equal intervals, and the plurality of second holes 131 are symmetrically arranged relative to the middle section of the middle flow channel 111; the plurality of third holes 132 are arranged at equal intervals, and the plurality of third holes 132 are symmetrically arranged relative to the middle section of the outer flow channel 112.

[0083] In some embodiments, three or more second holes 131 or third holes 132 are arranged corresponding to each flow channel, that is, the middle part includes three or more second holes 131, and the outer part includes three or more third holes 132. The diameters of the second holes 131 and the third holes 132 are both 1 mm to 3 mm, and the diameters of the holes gradually decrease or increase from the inside to the outside. In the height direction, the plurality of second holes 131 can be centered relative to the middle flow channel 111, and the plurality of third holes 132 can be centered relative to the outer flow channel 112. In the width direction, the plurality of second holes 131 are arranged at equal intervals, and the plurality of second holes 131 are symmetrically arranged relative to the middle section of the middle flow channel 111; the plurality of third holes 132 are arranged at equal intervals, and the plurality of third holes 132 are symmetrically arranged relative to the middle section of the outer flow channel 112.

[0084] It should be noted that the arrangement of the second holes 131 and the arrangement of the third holes 132 may be different. For example, the second holes 131 and the third holes 132 may have different numbers, sizes or positions. In the width direction, the distance between the middle section of the outer channel 112 and the middle section of the middle channel 111 is about 11 cm, and the third holes 132 of the outer channel 112 may also be symmetrical with respect to a plane 11 cm away from the middle section of the middle channel 111.

[0085] In the above embodiments, the second holes 131 and the third holes 132 are arranged in a row in the height direction, but it is not limited thereto. In some embodiments, the second holes 131 and the third holes 132 may be arranged in multiple rows, depending on the specific situation.

[0086] See also Figure 1 As shown, the second end of the guide 110 may have an arc groove to fit the reaction chamber 20 in the form of a rotating body. The guide 110 may be designed as a whole, but is not limited thereto. The guide 110 may also be split into two guide blocks 114 along the central cross section in the width direction, such as Figure 7 As shown, it depends on the specific situation.

[0087] The guide 110 is divided into two guide blocks 114, which can reduce the complexity of the structure of the guide 110 and facilitate manufacturing.

[0088] The present application also provides an air intake device 10 for intake air into the reaction chamber 20. Figure 1 , Figure 2 , Figure 3 and Figure 8 As shown, the air intake device 10 includes the gas diffusion assembly 100 disclosed above and the gas distributor 200. The gas distributor 200 includes an air intake end and an air exhaust end, the air exhaust end includes a middle exhaust port 211 and an outer exhaust port 212, the two outer exhaust ports 212 are respectively arranged on opposite sides of the middle exhaust port 211 in the width direction, and the air intake end includes a first pipe interface 221 and a second pipe interface 222, the first pipe interface 221 is connected to the middle exhaust port 211, and the second pipe interface 222 is connected to the outer exhaust port 212. The heights of the outer exhaust port 212 and the middle exhaust port 211 are equal, and the width ratio of the outer exhaust port 212 to the middle exhaust port 211 may be substantially equal to the width ratio of the outer flow channel 112 to the middle flow channel 111.

[0089] The first end of the guide 110 of the gas diffusion assembly 100 in the length direction is connected to the exhaust end of the gas distributor 200, the middle flow channel 111 corresponds to the middle exhaust port 211, and the outer flow channel 112 corresponds to the outer exhaust port 212. When the gas diffusion assembly 100 further includes a flow equalizer 130, the flow equalizer 130 may be disposed between the guide 110 and the gas distributor 200. When the air intake device 10 is working, the first reaction gas is introduced into the reaction chamber 20 through the first pipe interface 221, the middle exhaust port 211, the second hole 131 and the middle flow channel 111; the second reaction gas is introduced into the reaction chamber 20 through the second pipe interface 222, the outer exhaust port 212, the third hole 132 and the outer flow channel 112.

[0090] In this embodiment, the gas inlet device 10 includes a gas diffusion assembly 100, and the gas diffusion assembly 100 includes a guide 110. The first end of the guide 110 in the length direction is used to connect to the gas distributor 200, and the second end of the guide 110 in the length direction is used to connect to the reaction chamber 20. The guide 110 includes a middle flow channel 111 and an outer flow channel 112. The two outer flow channels 112 are respectively arranged on two opposite sides of the middle flow channel 111 in the width direction. The outer flow channels 112 and the middle flow channel 111 extend in parallel along the length direction, and the width ratio of the outer flow channel 112 to the middle flow channel 111 is 40±10:20±20. Since the middle flow channel 111 is a narrow flow channel relative to the outer flow channel 112, by increasing or decreasing the gas inlet pressure of the middle flow channel 111, the gas pressure in the center area of ​​the substrate can be increased or decreased without affecting the gas pressure in the areas on both sides of the substrate, so that the reaction gas in the reaction chamber 20 is evenly distributed, and the thickness uniformity of the deposited or epitaxially grown film layer is improved.

[0091] The present application also provides a substrate processing device, see Figure 3 As shown, the substrate processing device includes the above disclosed air intake device 10, reaction chamber 20, pedestal 30, auxiliary air intake device 40 and exhaust device 50. The pedestal 30 is arranged in the reaction chamber 20, and the pedestal 30 is used to hold the substrate, and the pedestal 30 can rotate synchronously with the substrate. The air intake device 10 is arranged on one side of the first direction of the reaction chamber 20, and the air intake device 20 is used to intake air along the first direction parallel to the substrate. The exhaust device 50 is arranged on the other side of the first direction of the reaction chamber 20, and the exhaust device 50 is used to discharge the residual reaction gas. The auxiliary air intake device 40 is used to intake air along the second direction parallel to the substrate, and the second direction is perpendicular to the first direction.

[0092] The substrate processing device processes the substrate including depositing or epitaxially growing a film layer on the substrate. When the substrate processing device is working, the reaction gas is introduced into the reaction chamber 20 through the gas inlet device 10. Since the width of the intermediate flow channel 111 is small, by increasing or decreasing the gas inlet pressure of the intermediate flow channel 111, the gas pressure in the center area of ​​the substrate can be increased or decreased without affecting the gas pressure in the areas on both sides of the substrate, so that the reaction gas in the reaction chamber 20 is evenly distributed. At the same time, the auxiliary gas inlet device 40 is used to introduce an auxiliary gas flow in a second direction parallel to the substrate, so as to increase the thickness of the film layer formed in the edge area of ​​the substrate, and finally achieve the purpose of uniform thickness of the formed film layer.

[0093] The terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0094] In this application, unless otherwise clearly specified and limited, the terms "assembly", "connection" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0095] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0096] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. A gas diffusion assembly, applied to an air intake device, the air intake device further comprising a gas distributor, the air intake device being used to intake air into a reaction chamber, characterized in that: The gas diffusion assembly includes a guide, a first end of the guide in the length direction is used to connect to the gas distributor, and a second end of the guide in the length direction is used to connect to the reaction chamber. The guide includes a middle flow channel and an outer flow channel, and the two outer flow channels are respectively arranged on two opposite sides of the middle flow channel in the width direction. The outer flow channels and the middle flow channel both extend parallel to the length direction, and the width ratio of the outer flow channel to the middle flow channel is 40±10:20±20.

2. The gas diffusion assembly according to claim 1, characterized in that: The width of the outer flow channel is greater than the width of the middle flow channel.

3. The gas diffusion assembly according to claim 2, characterized in that: The width ratio of the outer flow channel to the middle flow channel is 40±5:20±10.

4. The gas diffusion assembly according to claim 1, characterized in that: The gas diffusion assembly also includes a diffusion plate component, which is arranged in at least one of the outer flow channel and the middle flow channel. The diffusion plate component includes n diffusion plates arranged at intervals along the length direction of the guide, n≥2, and first holes are arranged on the diffusion plate. From the first end to the second end in the length direction of the guide, the number of the first holes on the diffusion plate increases and the hole diameter decreases.

5. The gas diffusion assembly according to claim 4, characterized in that When a plurality of the first holes are disposed on the diffusion plate, the plurality of the first holes are evenly spaced apart along the width direction.

6. The gas diffusion assembly according to claim 5, characterized in that In the width direction, the spacing between adjacent first holes in the middle flow channel is 10±1 mm, the spacing between adjacent first holes in the outer flow channel is 20±1 mm, and the diameter of the first hole is 1.5 mm to 4 mm.

7. The gas diffusion assembly according to claim 1, characterized in that: A mixing zone is provided at the first end of the guide, and the mixing zone is used to connect to the gas distributor, and the outer flow channel and the middle flow channel are both connected to the mixing zone.

8. The gas diffusion assembly according to claim 1, characterized in that The gas diffusion assembly also includes a flow plate, which is arranged between the guide and the gas distributor. The flow plate includes an outer portion corresponding to the outer flow channel and a middle portion corresponding to the middle flow channel. The middle portion includes at least one second hole, and the outer portion includes at least one third hole. The distance between the second hole and the third hole is greater than 3 cm.

9. An air intake device for intake air into a reaction chamber, characterized in that: The air intake device comprises: A gas distributor, the gas distributor comprising an air inlet end and an air outlet end, the air outlet end comprising a middle air outlet and an outer air outlet, the two outer air outlets being respectively arranged on opposite sides of the middle air outlet in a width direction, the air inlet end comprising a first pipe interface and a second pipe interface, the first pipe interface being communicated with the middle air outlet, and the second pipe interface being communicated with the outer air outlet; According to the gas diffusion assembly as described in claims 1 to 7, the first end in the length direction of the guide of the gas diffusion assembly is connected to the exhaust end, the middle flow channel corresponds to the middle exhaust port, and the outer flow channel corresponds to the outer exhaust port.

10. A substrate processing device, characterized in that: include: Reaction chamber; A susceptor is disposed in the reaction chamber, the susceptor is used to hold the substrate, and the susceptor can rotate synchronously with the substrate; The gas inlet device according to claim 9, arranged at one side of the reaction chamber, the gas inlet device being used to inlet gas along a first direction parallel to the substrate; The auxiliary air intake device is used for intake of air along a second direction parallel to the substrate, and the second direction is perpendicular to the first direction.

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