Diffusion high-temperature discharging device for diode silicon wafer production

Abstract

The invention relates to the technical field of discharging devices, in particular to a diffusion high-temperature discharging device for diode silicon wafer production, which comprises a machine body, a heating furnace is arranged on the inner side of the machine body, and a plurality of air conveying pipes are mounted in the heating furnace in a penetrating manner; two guide rods are fixedly mounted on the inner wall of the side, away from the outlet, of the heating furnace, sleeves are arranged on the guide rods, a clamping mechanism is arranged at the tops of the sleeves and comprises a clamping plate, a supporting plate is arranged at the position, close to the outlet, of the inner side of the containing cavity, and a front sealing mechanism is arranged on the inner side of the supporting plate; the front sealing mechanism comprises two semi-sealing plates; according to the invention, by adopting a double-sealing mechanism, the heating furnace and the outlet are sealed in the pushing-out process of the round silicon wafer, and the round silicon wafer can be automatically reset in the pushing-back process, so that the energy consumption is reduced, the stability of the inner sides of the placing cavity and the heating cavity and the gas are kept stable, and the processing effect of the round silicon wafer is improved.

Description

Technical Field

[0001] The invention relates to the technical field of furnace discharging devices, in particular to a diffusion high-temperature furnace discharging device for producing diode silicon wafers. Background Art

[0002] A high-temperature diffusion furnace is a special furnace equipment used in the fields of semiconductor manufacturing, material processing and high-temperature experiments. It is mainly used to diffuse materials at high temperatures. Common applications include doping of semiconductor wafers, diffusion of metal films, silicon oxide growth, heat treatment of glass and ceramics, etc. A high-temperature diffusion furnace uses a high-temperature environment to cause different elements or chemicals in the material to interact through a diffusion process. Usually, dopants are diffused to the surface or inside of a silicon wafer through heat treatment to change the electrical properties of the crystal. The discharge device of a high-temperature diffusion furnace is a device used to safely and smoothly remove the processed workpiece from the furnace after the working process of the diffusion furnace is completed.

[0003] A Chinese patent with announcement number CN118407138B discloses a boron diffusion furnace for solar cell manufacturing, including a diffusion furnace main body with a built-in heater. The application realizes rotary gas diffusion of silicon wafers by designing a gas mixing component in conjunction with an air inlet pipe to drive a fixing mechanism carrying silicon wafers, thereby ensuring the uniformity of silicon wafer gas diffusion and the gas mixing effect, thereby further improving the quality of subsequent silicon wafer gas diffusion.

[0004] The Chinese patent with announcement number CN114000202B discloses a variable temperature diffusion furnace for crystalline silicon solar cells, including a furnace body. The invention can drive the closing mechanism to synchronously close the furnace mouth through a linkage when closing the furnace door of the diffusion furnace. On the one hand, it increases the thermal insulation when the furnace mouth is closed to avoid heat dissipation and ensure that the temperature in the furnace body increases rapidly and maintains balance. On the other hand, it can improve the airtightness of the furnace mouth position, thereby preventing the leakage of harmful gases generated by silicon wafers or other components in the furnace body after high temperature.

[0005] The above-mentioned and similar prior arts require that the furnace door be opened when taking out the finished silicon wafers. At this time, the high-temperature gas and heat in the furnace will quickly escape, and the external cold air or ambient gas will enter the furnace, causing the temperature in the furnace to fluctuate violently. The working environment of the diffusion furnace is very sensitive to temperature changes, especially for high-precision workpieces such as semiconductors and solar cells. The impact is greater, which affects the processing quality of the workpieces, reduces the thermal efficiency of the furnace body, and increases energy consumption. At the same time, the hot air in the furnace is lost to the outside, which will cause the outside temperature to rise, and may even be accompanied by the generation of toxic gases, so that each time the finished silicon wafers are replaced, the working environment will be affected.

[0006] Therefore, the present invention provides a diffusion high-temperature furnace unloading device for producing diode silicon wafers, which can automatically seal the heating furnace and the machine body when the finished silicon wafers are pushed out. Summary of the invention

[0007] Aiming at the problem in the prior art that when replacing finished silicon wafers, high-temperature gas in the furnace easily escapes, causing energy loss and affecting the environment and finished silicon wafers, a diffusion high-temperature furnace discharge device for diode silicon wafer production is designed.

[0008] The technical solution adopted by the present invention to solve its technical problems is: a diffusion high-temperature furnace-out device for diode silicon wafer production, comprising a machine body, a placement cavity is opened on the inner side of the machine body, an outlet is opened through one side of the machine body, a heating furnace is arranged on the inner side of the machine body, and a plurality of air ducts are installed through the inside of the heating furnace; two guide rods are fixedly installed on the inner wall of the heating furnace away from the outlet, a movable sealing plate is slidably mounted on the outer side of the guide rod, a clamping rod is fixedly installed on the side of the movable sealing plate close to the outlet, and a sleeve is arranged on the guide rod Tube, a plurality of round silicon wafers are placed on the top of the sleeve, a clamping mechanism is arranged on the top of the sleeve, the clamping mechanism includes a clamping plate, a support plate is arranged on the inner side of the placement cavity near the outlet, a front sealing mechanism is arranged on the inner side of the support plate, the front sealing mechanism includes two half-sealing plates; the clamping mechanism is assembled to change the position of the movable sealing plate through the cooperation of the clamping plate and the clamping rod, so that the movable sealing plate can seal the heating furnace when the round silicon wafers are taken out; the front sealing mechanism is assembled to seal the outlet through the two half-sealing plates when the round silicon wafers are taken out.

[0009] Furthermore, a fixed platform is fixedly installed on the inner side of the bottom wall of the placement cavity, and two telescopic rods are fixedly installed inside the fixed platform. The telescopic rods pass through one side of the machine body, and a front sealing plate is fixedly installed on the output end of the telescopic rods. The front sealing plate is located on one side of the machine body, and the front sealing plate is used to seal the outlet.

[0010] Furthermore, one end of the sleeve is fixedly connected to a side of the front sealing plate close to the outlet, the sleeve passes through the inner side of the outlet, a sealing plate is fixedly installed on the outer side of the sleeve, a heating chamber is opened on the inner side of the heating furnace, and one side is open, the front sealing plate is in contact with the open side of the heating furnace, the front sealing plate is used to seal the heating furnace, a plurality of carriers are fixedly installed on the outer side of the sleeve, and round silicon wafers are placed on top of the carriers.

[0011] Furthermore, two support frames are fixedly installed on the top of the fixed platform, and the heating furnace is fixedly installed on the top of the support frames. The end of the air duct close to the outlet is the input end, and the input end of the air duct has multiple pipe openings. The other end of the air duct is the output end. Both ends of the air duct pass through the interior of the heating furnace, and the main part of the air duct is located on the outside of the heating furnace.

[0012] Furthermore, a slide groove is provided on the inner side of the top wall of the sleeve, a triangular plate is fixedly installed on the top of the guide rod, and the triangular plate is located on the inner side of the slide groove.

[0013] Furthermore, the clamping mechanism also includes a guide shell, which is fixedly installed on the top of the two sleeves, and two guide rods are fixedly installed on the inner side of the top wall of the guide shell, and the guide rods pass through the top of the clamping plate, and one end of two springs are fixedly installed on the inner side of the top wall of the guide shell, and the two springs are respectively located on the outside of the two guide rods, and the other end of the spring is fixedly installed on the top of the clamping plate, and two round bosses are fixedly installed on the bottom of the clamping plate, and the two round bosses respectively pass through the top of the sleeves, and the round bosses are located on the inner side of the slide groove.

[0014] Furthermore, a baffle is fixedly installed between the two sleeves, a hinged plate is fixedly installed at the bottom of the baffle, and a push plate is hingedly installed on one side of the hinged plate close to the outlet.

[0015] Furthermore, two connecting plates are fixedly installed on one side of the fixed platform close to the outlet, the connecting plate is fixedly connected to the support plate on one side close to the outlet, a movable groove is provided on the side of the support plate away from the outlet, and a protective cover is fixedly installed on the side of the support plate close to the outlet.

[0016] Furthermore, the front sealing mechanism also includes a spiral rod, which is rotatably installed inside the support plate through a bearing, a spiral groove is opened on the outer side of the spiral rod, a gear is fixedly installed on the outer side of the spiral rod, and the gear is located on the inner side of the movable groove, two tooth plates are placed on the inner side of the movable groove, and the two tooth plates are respectively meshed with the top and bottom of the gear, the two tooth plates are respectively fixedly connected to the side of the two half-sealing plates away from the fixed platform, a movable sleeve is slidably provided on the outer side of the spiral rod, and extension plates are respectively provided on the top and bottom of the movable sleeve, the extension plate at the bottom of the movable sleeve is located between the two connecting plates, a resistance rod is fixed on the inner side of the bottom wall of the movable sleeve, and the resistance rod is located on the inner side of the spiral groove, one end of a torsion spring is fixedly installed on the outer side of one end of the spiral rod away from the fixed platform, and the other end of the torsion spring is fixedly installed on the inner wall of the protective cover.

[0017] Beneficial effects of the present invention: (1) The diffusion high-temperature furnace unloading device for diode silicon wafer production described in the present invention adopts a design of a heating furnace equipped with an air duct and a movable sealing plate. When the telescopic rod drives the finished round silicon wafer to be pushed out, the movable sealing plate pushes the hot air inside the heating furnace out. In the process, the movable sealing plate and the heating chamber form a negative pressure to transport the hot air back to the inside of the heating chamber through the air duct, and cooperates with the clamping mechanism to form a seal on the heating furnace, which can greatly reduce the heat loss of the heating furnace and the outflow of hot air.

[0018] (2) The diffusion high-temperature furnace unloading device for diode silicon wafer production described in the present invention adopts the cooperation of a hinged push plate and a front sealing mechanism. When the telescopic rod drives the finished round silicon wafer to be pushed out, it can drive the two half sealing plates to seal the outlet of the machine body. During the process of replacing the round silicon wafer, the heat loss inside the cavity and the outflow of hot air to the outside are prevented, thereby reducing the impact on the working environment.

[0019] (3) The diffusion high-temperature furnace discharge device for diode silicon wafer production described in the present invention adopts a double sealing mechanism, so that the heating furnace and the outlet are sealed during the process of pushing out the round silicon wafer, and it can automatically reset during the process of pushing back, thereby reducing energy consumption, ensuring the stability of the placement cavity and the inner side of the heating cavity and the gas, and improving the processing effect of the round silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0021] Figure 1 It is a schematic diagram of the three-dimensional structure of the diffusion high-temperature furnace discharge device of the present invention; Figure 2 It is a schematic diagram of the three-dimensional structure of the body of the present invention; Figure 3 It is a three-dimensional structural schematic diagram of the heating furnace and the fixing platform of the present invention; Figure 4 It is a schematic diagram of the three-dimensional structure of the opening of the heating furnace of the present invention; Figure 5 It is a schematic diagram of the cross-sectional three-dimensional structure of the heating furnace of the present invention; Figure 6 It is a three-dimensional structural schematic diagram of the movable sealing plate of the present invention; Figure 7 It is a schematic diagram of the three-dimensional structure after the sleeve and the clamping mechanism of the present invention are separated; Figure 8 It is a cross-sectional three-dimensional structural schematic diagram of the clamping mechanism of the present invention; Fig. 9 It is a schematic diagram of the three-dimensional structure of the baffle of the present invention; Fig.10 It is a three-dimensional structural schematic diagram of the support plate and the front sealing mechanism of the present invention; Fig.11 It is a three-dimensional structural schematic diagram of the support plate of the present invention; Fig.12 It is a schematic diagram of the three-dimensional structure of the protective cover of the present invention; Fig.13 It is a three-dimensional structural schematic diagram of the front sealing mechanism of the present invention; Fig.14 It is a schematic diagram of the three-dimensional structure after the spiral rod and the movable sleeve of the present invention are separated.

[0022] In the figure: 1, machine body; 2, placement chamber; 3, outlet; 4, fixed platform; 5, telescopic rod; 6, front sealing plate; 7, sleeve; 8, sealing plate; 9, loading rack; 10, round silicon wafer; 11, support frame; 12, heating furnace; 13, air duct; 14, guide rod; 15, movable sealing plate; 16, clamping rod; 17, clamping mechanism; 1701, guide shell; 1702, guide rod; 1703, spring; 1704, snap-on plate; 1705, round boss; 18, slide groove; 19, baffle; 20, hinged plate; 21, push plate; 22, connecting plate; 23, support plate; 24, movable groove; 25, protective cover; 26, front sealing mechanism; 2601, screw rod; 2602, gear; 2603, tooth plate; 2604, half sealing plate; 2605, movable sleeve; 2606, torsion spring; 27, triangular plate. DETAILED DESCRIPTION

[0023] In order to make the technical means, technical features, objectives and effects achieved by the present invention easy to understand, the present invention is further described below in conjunction with specific implementation methods.

[0024] Example: Figure 1-Figure 14 As shown, a diffusion high-temperature furnace discharging device for diode silicon wafer production described in the present invention comprises a body 1, a placement cavity 2 is opened on the inner side of the body 1, an outlet 3 is opened through one side of the body 1, a fixing platform 4 is fixedly installed on the inner side of the bottom wall of the placement cavity 2, two telescopic rods 5 are fixedly installed inside the fixing platform 4, the telescopic rods 5 pass through one side of the body 1, a front sealing plate 6 is fixedly installed on the output end of the telescopic rods 5, and the front sealing plate 6 is located on one side of the body 1, and the front sealing plate 6 is used to seal the outlet 3.

[0025] Specifically, the body 1 can provide an opening space for the placement cavity 2, the placement cavity 2 can provide a placement space for the heating furnace 12, the body 1 can provide a through opening space for the outlet 3, the outlet 3 is used for the entry and exit of the round silicon wafer 10, the placement cavity 2 can provide a placement space for the fixing table 4, and the front sealing plate 6 can seal the outlet 3 during the processing of the round silicon wafer 10 to prevent heat and gas from escaping. When the output end of the telescopic rod 5 is extended, the front sealing plate 6 is driven away from the body 1 to release the seal of the outlet 3, thereby allowing the round silicon wafer 10 to be moved out to the outside.

[0026] In this embodiment, a heating furnace 12 is provided on the inner side of the body 1, a heating chamber is opened on the inner side of the heating furnace 12, and one side is in an open state, a plurality of air ducts 13 are installed through the interior of the heating furnace 12, two guide rods 14 are fixedly installed on the inner wall of the heating furnace 12 away from the outlet 3, two support frames 11 are fixedly installed on the top of the fixed platform 4, the heating furnace 12 is fixedly installed on the top of the support frame 11, one end of the air duct 13 close to the outlet 3 is the input end, the input end of the air duct 13 has a plurality of pipe openings, the other end of the air duct 13 is the output end, both ends of the air duct 13 pass through the interior of the heating furnace 12, and the main part of the air duct 13 is located on the outside of the heating furnace 12.

[0027] Specifically, the fixed table 4 can provide stable support for the heating furnace 12 through the support frame 11, the heating furnace 12 can provide a through support for the air duct 13, the heating furnace 12 can provide an opening space for the heating chamber, the heating chamber can provide a placement space for the round silicon wafer 10 to be processed, one end of the heating furnace 12 is fixed and sealed, and the opening at the other end is used for the round silicon wafer 10 to enter and exit. When the opening of the heating furnace 12 is opened, the heat and air inside the heating chamber escape from the opening to the inside of the placement chamber 2, and the air duct 13 can provide a conveying channel for air, so that the air at the opening of the heating furnace 12 can move along the air duct 13 to the fixed and sealed end of the heating chamber, thereby reducing the escape of hot air from the heating chamber.

[0028] In this embodiment, a movable sealing plate 15 is slidably mounted on the outer side of the guide rod 14, and a clamping rod 16 is fixedly mounted on the side of the movable sealing plate 15 close to the outlet 3. The guide rod 14 is provided with a sleeve 7, and a plurality of round silicon wafers 10 are placed on the top of the sleeve 7. One end of the sleeve 7 is fixedly connected to the side of the front sealing plate 6 close to the outlet 3, and the sleeve 7 passes through the inner side of the outlet 3. A sealing plate 8 is fixedly mounted on the outer side of the sleeve 7. The front sealing plate 6 contacts the opening side of the heating furnace 12, and the front sealing plate 8 is used to seal the heating furnace 12. A plurality of carriers 9 are fixedly mounted on the outer side of the sleeve 7, and the round silicon wafers 10 are placed on the top of the carriers 9. A slide groove 18 is provided on the inner side of the top wall of the sleeve 7. A triangular plate 27 is fixedly mounted on the top of the guide rod 14, and the triangular plate 27 is located on the inner side of the slide groove 18.

[0029] Specifically, the guide rod 14 can provide sliding support for the movable sealing plate 15, the movable sealing plate 15 can seal the heating chamber, the movable sealing plate 15 can provide stable support for the clamping rod 16, the guide rod 14 can provide stable support for the triangular plate 27, the highest point of the triangular plate 27 coincides with the end face of the opening of the heating furnace 12, when the round silicon wafer 10 needs to be moved out of the heating chamber, the movable sealing plate 15 can stop at the position of the open end face of the heating furnace 12, and the opening of the heating furnace 12 is sealed, the guide rod 14 can provide guidance and support for the sleeve 7, and the sleeve 7 can be The sealing plate 8 provides a stable support and can provide a seal for the opening of the heating furnace 12. When the round silicon wafer 10 is processed, the sealing plate 8 cooperates with the heating furnace 12 to form a closed space to wrap the round silicon wafer 10 for processing. The sleeve 7 can provide a stable support for the carrier 9, and the carrier 9 can provide a clamping support for the round silicon wafer 10. The sleeve 7 can provide an opening space for the slide groove 18, and the slide groove 18 can provide a relative activity space for the triangle plate 27, so that when the guide rod 14 and the sleeve 7 slide relative to each other, the position of the triangle plate 27 will not be affected.

[0030] In this embodiment, a clamping mechanism 17 is provided at the top of the sleeve 7, and the clamping mechanism 17 includes a clamping plate 1704. The clamping mechanism 17 is assembled to change the position of the movable sealing plate 15 through the cooperation of the clamping plate 1704 and the clamping rod 16, so that the movable sealing plate 15 can seal the heating furnace 12 when the round silicon wafer 10 is taken out; the clamping mechanism 17 also includes a guide shell 1701, which is fixedly installed on the top of the two sleeves 7, and two guide shells 1701 are fixedly installed on the inner side of the top wall. Guide rod 1702, guide rod 1702 passes through the top of the clamping plate 1704, one end of two springs 1703 is fixedly installed on the inner side of the top wall of the guide shell 1701, the two springs 1703 are respectively located on the outside of the two guide rods 1702, the other end of the spring 1703 is fixedly installed on the top of the clamping plate 1704, and two round bosses 1705 are fixedly installed on the bottom of the clamping plate 1704, and the two round bosses 1705 respectively pass through the top of the sleeve 7, and the round bosses 1705 are located on the inner side of the slide groove 18.

[0031] Specifically, the sleeve 7 can provide a stable support for the guide shell 1701, the guide shell 1701 can provide a movable space for the clamping plate 1704, the guide rod 1702 can provide a guiding effect for the up and down movement of the clamping plate 1704, so that the clamping plate 1704 can move up and down stably, the spring 1703 can provide a reset effect for the clamping plate 1704, the clamping plate 1704 can provide a stable support for the round boss 1705, the sleeve 7 can provide a penetration space for the round boss 1705, and the slide groove 18 can provide a placement space for the round boss 1705. When the sleeve 7 drives the clamping mechanism 17 to move to the opening end close to the heating furnace 12, the sleeve 7 drives the round boss 1705 to contact the triangular plate 27, and the round boss 1705 continues to move, so that the round boss 1 Under the resistance of the triangular plate 27, 705 moves upward along the inclined surface of the triangular plate 27, and the circular boss 1705 drives the clamping plate 1704 to move upward along the inner side of the guide shell 1701, and the clamping plate 1704 moves upward along the outer side of the guide rod 1702, and squeezes the spring 1703 to compress and deform. When the circular boss 1705 moves to the top of the triangular plate 27, the clamping plate 1704 is separated from the clamping column, so that the clamping plate 1704 and the clamping column no longer have a clamping effect, and the circular boss 1705 moves downward from the top of the triangular plate 27. Under the resetting action of the spring 1703, the clamping plate 1704 is reset to its original position, so that the circular boss 1705 passes through the sleeve 7 again and is located on the inner side of the slide groove 18, so that it can be clamped with the clamping column again in the next activity.

[0032] In this embodiment, a baffle 19 is fixedly installed between the two sleeves 7 , a hinged plate 20 is fixedly installed at the bottom of the baffle 19 , and a push plate 21 is hingedly installed on one side of the hinged plate 20 close to the outlet 3 .

[0033] Specifically, the sleeve 7 can provide a stable support for the baffle 19, and the baffle 19 can provide a rotation support for the push plate 21 through the hinge plate 20. At the same time, when the push plate 21 rotates downward counterclockwise to a vertical state, the hinge plate 20 can provide a limiting effect for the push plate 21, and can prevent the push plate 21 from continuing to rotate counterclockwise. When the push plate 21 moves out of the inner side of the heating chamber, due to the certain height between the heating furnace 12 and the top of the fixed platform 4, the push plate 21 rotates downward counterclockwise to a vertical state under the action of its own gravity. When the push plate 21 enters the inner side of the heating chamber again, the push plate 21 rotates upward clockwise under the action of the open end face of the heating furnace 12, so that the push plate 21 can enter the placement chamber 2, so that the push plate 21 will not have a hard collision with the heating furnace 12.

[0034] In this embodiment, two connecting plates 22 are fixedly installed on the side of the fixed platform 4 close to the outlet 3. The side of the connecting plate 22 close to the outlet 3 is fixedly connected to the support plate 23. A movable groove 24 is provided on the side of the support plate 23 away from the outlet 3. A protective cover 25 is fixedly installed on the side of the support plate 23 close to the outlet 3.

[0035] Specifically, the fixed platform 4 can provide stable support for the two connecting plates 22, and the connecting plates 22 can not only provide stable support for the support plates 23, but also the two connecting plates 22 can provide limiting effect for the movable sleeve 2605, thereby preventing the movable sleeve 2605 from rotating. The support plates 23 can provide opening space for the movable groove 24, and the movable groove 24 can provide movable space for the front sealing mechanism 26, and the protective cover 25 can provide placement space for the torsion spring piece 2606.

[0036] In this embodiment, a support plate 23 is provided at a position near the outlet 3 on the inner side of the placement chamber 2, and a front sealing mechanism 26 is provided on the inner side of the support plate 23, and the front sealing mechanism 26 includes two half-sealing plates 2604; the front sealing mechanism 26 is assembled to seal the outlet 3 through the two half-sealing plates 2604 when the round silicon wafer 10 is taken out, and the front sealing mechanism 26 also includes a spiral rod 2601, and the spiral rod 2601 is rotatably mounted inside the support plate 23 through a bearing, and a spiral groove is provided on the outer side of the spiral rod 2601, and a gear 2602 is fixedly installed on the outer side of the spiral rod 2601, and the gear 2602 is located on the inner side of the movable groove 24, and two tooth plates 260 are placed on the inner side of the movable groove 24. 3, and the two tooth plates 2603 are respectively meshed with the top and bottom of the gear 2602, the two tooth plates 2603 are respectively fixedly connected to the two half-sealing plates 2604 on the side away from the fixed platform 4, a moving sleeve 2605 is slidably provided on the outer side of the spiral rod 2601, and the top and bottom of the moving sleeve 2605 are respectively provided with extension plates, and the extension plate at the bottom of the moving sleeve 2605 is located between the two connecting plates 22, an interference rod is fixed on the inner side of the bottom wall of the moving sleeve 2605, and the interference rod is located on the inner side of the spiral groove, one end of the torsion spring 2606 is fixedly installed on the outer side of one end of the spiral rod 2601 away from the fixed platform 4, and the other end of the torsion spring 2606 is fixedly installed on the inner wall of the protective cover 25.

[0037] Specifically, the support plate 23 can provide rotational support for the spiral rod 2601 through the bearing, the surface of the spiral rod 2601 can provide a space for the spiral groove, the spiral rod 2601 can provide sliding support for the movable sleeve 2605, the extension plate at the top of the movable sleeve 2605 can interfere with the push plate 21, the extension plate at the bottom of the movable sleeve 2605 can cooperate with the two connecting plates 22 to prevent the movable sleeve 2605 from rotating, and the inner side of the movable sleeve 2605 can provide a stable support for the interference rod. When the push plate 21 drives the movable sleeve 2605 to move to the left, the movable sleeve 2605 slides to the left under the limiting action of the extension plate at the bottom and the two connecting plates 22, so that the movable sleeve 2605 interferes with the spiral groove of the spiral rod 2601 through the inner interference rod, and the spiral rod 2601 rotates under the interference, and the spiral sleeve 2605 The rotating rod 2601 can provide a stable support for the gear 2602 and one end of the torsion spring 2606, so that when the spiral rod 2601 rotates, it can drive the torsion spring 2606 to contract, increase the elastic potential energy of the torsion spring 2606, so that the spiral rod 2601 can be reset. At the same time, the rotation of the gear 2602 can use the meshing action with the two tooth plates 2603 to drive the two tooth plates 2603 to move towards each other. The two tooth plates 2603 move along the guide groove under the guidance of the movable groove 24, so that the tooth plates 2603 drive the two half-sealing plates 2604 to approach each other. When the carrier 9 and the round silicon wafer 10 are completely moved out from the outlet 3, the two half-sealing plates 2604 seal the outlet 3, so that after the carrier 9 is moved out, the placement chamber 2 is in a sealed state, thereby reducing the hot air inside the placement chamber 2 from escaping to the outside.

[0038] Working principle: when the staff needs to take out the processed round silicon wafer 10, the telescopic rod 5 is extended through the control console, so that the output end of the telescopic rod 5 drives the front sealing plate 6 and the sealing plate 8 to move toward the front, the front sealing plate 6 moves to open the outlet 3, and the sealing plate 8 moves to open the opening of the heating furnace 12, and the front sealing plate 6 drives the sleeve 7 to move, so that the sleeve 7 drives the movable sealing plate 15 to move toward the front through the clamping action of the clamping plate 1704 and the clamping rod 16. When the movable sealing plate 15 moves toward the front, the movable sealing plate 15 gradually pushes the hot air on the inner side of the heating chamber on the left side to the inner side of the placement chamber 2, and at the same time, the pressure inside the heating chamber on the right side of the movable sealing plate 15 is reduced, so that the heating chamber on the right side of the movable sealing plate 15 absorbs air through the air duct 13, so that the air duct 13 transports the hot air on the left side of the movable sealing plate 15 to the heating chamber on the right side of the movable sealing plate 15, thereby reducing the discharge of hot air inside the heating chamber and reducing the heat loss inside the heating furnace 12; When the sleeve 7 drives the clamping mechanism 17 to move to the open end close to the heating furnace 12, the sleeve 7 drives the round protrusion 1705 to contact the triangular plate 27, and the round protrusion 1705 continues to move, so that the round protrusion 1705 moves upward along the inclined surface of the triangular plate 27 under the resistance of the triangular plate 27, and the round protrusion 1705 drives the clamping plate 1704 to move upward along the inner side of the guide shell 1701, and the clamping plate 1704 moves upward along the outer side of the guide rod 1702, and squeezes the spring 1703 to compress the spring 1703. When the round convex column 1705 moves to the top of the triangular plate 27, the clamping plate 1704 is separated from the clamping column, so that the clamping plate 1704 no longer has a clamping effect with the clamping column, so that the movable sealing plate 15 stops moving after losing the clamping effect, and the movable sealing plate 15 stops at one end of the opening of the heating furnace 12, so that the movable sealing plate 15 seals the heating furnace 12, thereby preventing the hot air inside the heating furnace 12 from escaping to the inside of the placement cavity 2, and further reducing the heat loss inside the heating furnace 12; The output end of the telescopic rod 5 continues to move, so that the sleeve 7 drives the baffle 19 to move out of the inner side of the heating furnace 12, and the baffle 19 drives the push plate 21 to move out of the inner side of the heating furnace 12 through the hinge plate 20. When the push plate 21 is no longer in contact with the heating furnace 12, the push plate 21 rotates downward under the action of its own gravity, so that the push plate 21 rotates to a vertical state, and the telescopic rod 5 continues to drive the sleeve 7 to move, so that the sleeve 7 drives the vertical push plate 21 to contact the extension plate at the top of the movable sleeve 2605. The push plate 21 has a tendency to continue to rotate under the reaction force of the movable sleeve 2605, but the push plate 21 no longer rotates under the support of the hinge plate 20, thereby causing the push plate 21 to drive the movable sleeve 2605 to move to the left. At the same time, the movable sleeve 2605 will not rotate under the limiting action of the bottom extension plate and the two connecting plates 22, so that the movable sleeve 2605 passes through the inner The abutment rod and the spiral groove of the spiral rod 2601 are in conflict with each other, and the spiral rod 2601 rotates under the conflict, so that the abutment rod drives the outer gear 2602 to rotate, and the rotation of the gear 2602 drives the two gear plates 2603 to move towards each other by meshing with the two gear plates 2603. The two gear plates 2603 move along the guide groove under the guidance of the movable groove 24, so that the gear plates 2603 drive the two half-sealing plates 2604 to approach each other. When the carrier 9 and the round silicon wafer 10 are completely moved out from the outlet 3, the two half-sealing plates 2604 seal the outlet 3, so that after the carrier 9 is moved out, the placement chamber 2 is in a sealed state, thereby reducing the hot air inside the placement chamber 2 from escaping to the outside, reducing the impact of the hot air generated by the heating furnace 12 on the working environment, and also reducing the loss of heat inside the placement chamber 2. After the staff replaces the round silicon wafer 10, the output end of the telescopic rod 5 is controlled to contract, so that the push plate 21 gradually moves to the right. During the extension process of the output end of the telescopic rod 5, the spiral rod 2601 rotates to drive the torsion spring 2606 to contract, so that the elastic potential energy of the torsion spring 2606 increases. Therefore, when the output end of the telescopic rod 5 contracts, the right movement of the push plate 21 enables the torsion spring 1703 to release the elastic potential energy, thereby driving the screw to rotate in the opposite direction, and then the movable sleeve 2605 and the two half-sealing plates 2604 can be reset; The output end of the telescopic rod 5 contracts and drives the sleeve 7 to move to the right, so that the round protrusion 1705 drives the clamping plate 1704 to clamp with the clamping column again under the action of the triangular plate 27, so that the clamping mechanism can be reset again.

[0039] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of the present invention is defined by the attached claims and their equivalents.

Claims

1. A diffusion high-temperature furnace discharge device for producing diode silicon wafers, comprising a body (1), a placement cavity (2) is provided on the inner side of the body (1), and an outlet (3) is provided through one side of the body (1), characterized in that: A heating furnace (12) is arranged on the inner side of the machine body (1), and a plurality of air delivery pipes (13) are installed through the interior of the heating furnace (12); two guide rods (14) are fixedly installed on the inner wall of the heating furnace (12) on the side away from the outlet (3); a movable sealing plate (15) is slidably mounted on the outer side of the guide rod (14); a clamping rod (16) is fixedly installed on the side of the movable sealing plate (15) close to the outlet (3); a sleeve (7) is arranged on the guide rod (14); a plurality of round silicon wafers (10) are placed on the top of the sleeve (7); a clamping mechanism (17) is arranged on the top of the sleeve (7); the clamping mechanism (17) includes a clamping plate (1704); a support plate (23) is arranged on the inner side of the placement cavity (2) close to the outlet (3); a front sealing mechanism (26) is arranged on the inner side of the support plate (23); the front sealing mechanism (26) includes two half sealing plates (2604); A clamping mechanism (17) is configured to change the position of the movable sealing plate (15) through the cooperation of the clamping plate (1704) and the clamping rod (16), so that the movable sealing plate (15) can seal the heating furnace (12) when the round silicon wafer (10) is taken out; The front sealing mechanism (26) is configured to seal the outlet (3) through two half sealing plates (2604) when the round silicon wafer (10) is taken out.

2. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 1, characterized in that: A fixed platform (4) is fixedly mounted on the inner side of the bottom wall of the placement chamber (2); two telescopic rods (5) are fixedly mounted inside the fixed platform (4); the telescopic rods (5) penetrate one side of the machine body (1); a front sealing plate (6) is fixedly mounted on the output end of the telescopic rods (5); the front sealing plate (6) is located on one side of the machine body (1); and the front sealing plate (6) is used to seal the outlet (3).

3. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 1, characterized in that: One end of the sleeve (7) is fixedly connected to a side of the front sealing plate (6) close to the outlet (3); the sleeve (7) passes through the inner side of the outlet (3); a sealing plate (8) is fixedly installed on the outer side of the sleeve (7); a heating chamber is provided on the inner side of the heating furnace (12), and one side is open; the front sealing plate (6) contacts the open side of the heating furnace (12); the front sealing plate (8) is used to seal the heating furnace (12); a plurality of carriers (9) are fixedly installed on the outer side of the sleeve (7); round silicon wafers (10) are placed on top of the carriers (9).

4. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 2, characterized in that: Two support frames (11) are fixedly mounted on the top of the fixed platform (4), and the heating furnace (12) is fixedly mounted on the top of the support frames (11). One end of the air supply pipe (13) close to the outlet (3) is an input end, and the input end of the air supply pipe (13) has a plurality of pipe openings. The other end of the air supply pipe (13) is an output end. Both ends of the air supply pipe (13) pass through the interior of the heating furnace (12), and the main body of the air supply pipe (13) is located outside the heating furnace (12).

5. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 3, characterized in that: A slide groove (18) is provided on the inner side of the top wall of the sleeve (7), a triangular plate (27) is fixedly mounted on the top of the guide rod (14), and the triangular plate (27) is located on the inner side of the slide groove (18).

6. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 5, characterized in that: The clamping mechanism (17) further comprises a guide shell (1701), the guide shell (1701) being fixedly mounted on the top of the two sleeves (7), two guide rods (1702) being fixedly mounted on the inner side of the top wall of the guide shell (1701), the guide rods (1702) penetrating the top of the clamping plate (1704), one end of two springs (1703) being fixedly mounted on the inner side of the top wall of the guide shell (1701), the two springs (1703) being respectively located on the outside of the two guide rods (1702), the other end of the springs (1703) being fixedly mounted on the top of the clamping plate (1704), two round bosses (1705) being fixedly mounted on the bottom of the clamping plate (1704), the two round bosses (1705) respectively penetrating the top of the sleeves (7), the round bosses (1705) being located on the inner side of the slide groove (18).

7. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 6, characterized in that: A baffle (19) is fixedly installed between the two sleeves (7), a hinged plate (20) is fixedly installed at the bottom of the baffle (19), and a push plate (21) is hingedly installed on one side of the hinged plate (20) close to the outlet (3).

8. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 4, characterized in that: Two connecting plates (22) are fixedly mounted on a side of the fixing platform (4) close to the outlet (3); a side of the connecting plate (22) close to the outlet (3) is fixedly connected to a support plate (23); a side of the support plate (23) away from the outlet (3) is provided with a movable groove (24); and a side of the support plate (23) close to the outlet (3) is fixedly mounted with a protective cover (25).

9. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 8, characterized in that: The front sealing mechanism (26) further comprises a spiral rod (2601), the spiral rod (2601) being rotatably mounted inside the support plate (23) via a bearing, a spiral groove being formed on the outer side of the spiral rod (2601), a gear (2602) being fixedly mounted on the outer side of the spiral rod (2601), and the gear (2602) being located on the inner side of the movable groove (24), two tooth plates (2603) being placed on the inner side of the movable groove (24), and the two tooth plates (2603) being respectively meshed with the top and bottom of the gear (2602), and the two tooth plates (2603) being respectively meshed with the two half sealing plates (2604) A side away from the fixed platform (4) is fixedly connected, a movable sleeve (2605) is slidably provided on the outer side of the spiral rod (2601), the top and bottom of the movable sleeve (2605) are respectively provided with extension plates, the extension plate at the bottom of the movable sleeve (2605) is located between the two connecting plates (22), a resistance rod is fixed on the inner side of the bottom wall of the movable sleeve (2605), and the resistance rod is located on the inner side of the spiral groove, one end of a torsion spring (2606) is fixedly installed on the outer side of one end of the spiral rod (2601) away from the fixed platform (4), and the other end of the torsion spring (2606) is fixedly installed on the inner wall of the protective cover (25).

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