A diffusion high-temperature furnace discharging device for diode silicon wafer production

By using a heating furnace and a movable sealing plate equipped with air ducts in the diffusion high-temperature furnace discharge device for diode silicon wafer production, the problem of high-temperature gas escape in the furnace is solved, and the effect of reducing energy loss and environmental impact is achieved.

CN119374376BActive Publication Date: 2025-06-17QINGDAO JINHUIYUAN ELECTRONICS CO LTD
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Patent Information

Application Number
CN202411959188.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-06-17
Estimated Expiration
2044-12-30

AI Technical Summary

Technical Problem

In the prior art, when removing finished silicon wafers, high-temperature gases in the furnace are prone to escape, resulting in energy loss and affecting the environment and finished silicon wafers.

Method used

A diffusion high-temperature furnace discharge device for the production of diode silicon wafers is designed, and the heating furnace and movable sealing plate are designed with air transport ducts. The movable sealing plate and the heating chamber are used to form a negative pressure, and the hot air is transported back to the inner side of the heating chamber through the air transport duct, and the heating furnace is formed in conjunction with the latch mechanism.

Benefits of technology

It greatly reduces the heat loss of the heating furnace and the outflow of hot air, reduces the impact on the working environment, and improves the processing effect of the round silicon wafer.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention relates to the technical field of discharging devices, and specifically relates to a diffusion high-temperature discharging device for diode silicon wafer production, including a machine body. A heating furnace is arranged inside the machine body, and a plurality of air delivery pipes are installed through the inside of the heating furnace; Two guide rods are fixedly installed on the inner wall of the heating furnace away from the outlet, sleeves are arranged on the guide rods, a clamping mechanism is arranged at the top of the sleeve, the clamping mechanism includes a clamping plate, a support plate is arranged inside the placement cavity near the outlet, and a front sealing mechanism is arranged inside the support plate. The front sealing mechanism includes two semi-sealing plates; By adopting a double sealing mechanism, the present invention seals the heating furnace and the outlet during the process of pushing out the circular silicon wafer, and can automatically reset during the process of pushing back, reducing energy consumption, keeping the stability and gas inside the placement cavity and the heating cavity stable, and improving the processing effect of the circular silicon wafer.
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Description

Technical Field

[0001] The present invention relates to the technical field of discharging devices, and more specifically, to a high-temperature discharging device for the production of diode silicon wafers. Background Art

[0002] A high-temperature diffusion furnace is a special furnace equipment used in fields such as semiconductor manufacturing, material processing, and high-temperature experiments. It is mainly used for diffusion treatment of materials at high temperatures. Common applications include doping of semiconductor wafers, diffusion of metal thin films, growth of silicon oxide, heat treatment of glass and ceramics, etc. The high-temperature diffusion furnace utilizes a high-temperature environment to promote the interaction of different elements or chemical substances in the material through the diffusion process. Usually, dopants are diffused into the surface or interior of the silicon wafer through heat treatment to change the electrical properties of the crystal. The discharging device of the high-temperature diffusion furnace is a device used to safely and smoothly remove the processed workpiece from the furnace after the operation of the diffusion furnace is completed.

[0003] The Chinese patent with the publication number CN118407138B discloses a boron diffusion furnace for solar cell manufacturing, including a diffusion furnace body with an internal heater. This application realizes the rotary gas diffusion of the silicon wafer by designing a gas mixing component and cooperating with the second inlet pipe to drive the fixing mechanism carrying the silicon wafer, ensuring the uniformity of gas diffusion of the silicon wafer, while ensuring the gas mixing effect and further improving the quality of subsequent gas diffusion of the silicon wafer.

[0004] The Chinese patent with the publication number CN114000202B discloses a variable-temperature diffusion furnace for crystalline silicon solar cells, including a furnace body. The invention can drive the closing mechanism to synchronously close the furnace opening when closing the furnace door of the diffusion furnace. On the one hand, it increases the heat insulation when closing the furnace opening, avoids heat dissipation, ensures the rapid increase and maintenance of the temperature inside the furnace body, and on the other hand, it can improve the airtightness of the furnace opening position, thereby preventing the leakage of harmful gases generated by silicon wafers or other components after high temperature inside the furnace body.

[0005] In the above-mentioned and similar prior arts, when taking out the finished silicon wafer, the furnace door needs to be opened. At this time, the high-temperature gas and heat inside the furnace will quickly escape, and the cold air or ambient gas outside will enter the furnace, resulting in a drastic fluctuation in the furnace temperature. The working environment of the diffusion furnace is very sensitive to temperature changes, especially has a greater impact on high-precision workpieces such as semiconductors and solar cells, affecting the processing quality of the workpieces, reducing the thermal efficiency of the furnace body, increasing energy consumption. At the same time, the hot air inside the furnace flowing out to the outside will cause the temperature of the outside to rise, and even be accompanied by the generation of toxic gases, making the working environment affected every time when replacing the finished silicon wafer.

[0006] Therefore, the present invention provides a diffusion high-temperature furnace discharging device for diode wafer production, which can automatically seal the heating furnace and the body when the finished silicon wafer is pushed out. Summary of the Invention

[0007] A diffusion high-temperature furnace discharging device for diode wafer production is designed to address the problem that when replacing the finished silicon wafer in the prior art, high-temperature gas in the furnace easily escapes, resulting in energy loss and affecting the environment and the finished silicon wafer.

[0008] The technical solution adopted by the present invention to solve its technical problems is as follows: A diffusion high-temperature furnace discharging device for diode wafer production includes a body. A placement cavity is formed inside the body. An outlet is formed through one side of the body. A heating furnace is arranged inside the body. A plurality of air ducts are installed through the inside of the heating furnace. Two guide rods are fixedly installed on the inner wall of the heating furnace away from the outlet. A movable sealing plate is slidably sleeved on the outer side of the guide rods. A clamping rod is fixedly installed on the side of the movable sealing plate close to the outlet. A sleeve is slidably arranged on the outer side of the guide rods. A plurality of circular wafers are placed on the top of the sleeve. A clamping mechanism is arranged on the top of the sleeve. The clamping mechanism includes a clamping plate. A support plate is arranged inside the placement cavity close to the outlet. A front sealing mechanism is arranged inside the support plate. The front sealing mechanism includes two semi-sealing plates. The clamping mechanism is configured to change the position of the movable sealing plate through the cooperation of the clamping plate and the clamping rod, so that the movable sealing plate can seal the heating furnace when the circular wafer is taken out. The front sealing mechanism is configured to seal the outlet through the two semi-sealing plates when the circular wafer is taken out.

[0009] Further, a fixed platform is fixedly installed on the inner side of the bottom wall of the placement cavity. Two telescopic rods are fixedly installed inside the fixed platform. The telescopic rods penetrate through one side of the body. The output end of the telescopic rod is fixedly installed with a front sealing plate, and the front sealing plate is located on one side of the body. The front sealing plate is used to seal the outlet.

[0010] Further, one end of the sleeve is fixedly connected to the side of the front sealing plate close to the outlet. The sleeve penetrates through the inside of the outlet. A sealing plate is fixedly installed on the outer side of the sleeve. A heating cavity is formed inside the heating furnace, and one side is in an open state. The sealing plate is in contact with the open side of the heating furnace. The sealing plate is used to seal the heating furnace. A plurality of carrier racks are fixedly installed on the outer side of the sleeve. The circular wafers are placed on the top of the carrier racks.

[0011] Further, two support frames are fixedly installed on the top of the fixed platform. The heating furnace is fixedly installed on the top of the support frames. The end of the air duct close to the outlet is the input end. The input end of the air duct has a plurality of pipe orifices. The other end of the air duct is the output end. Both ends of the air duct penetrate through the inside of the heating furnace, and the main part of the air duct is located outside the heating furnace.

[0012] Further, a chute is provided on the inner side of the top wall of the sleeve. A triangular plate is fixedly installed at the top of the guide rod, and the triangular plate is located inside the chute.

[0013] Further, the clamping mechanism further includes a guide housing fixedly installed at the top of the two sleeves. Two guide rods are fixedly installed on the inner side of the top wall of the guide housing. The guide rods penetrate through the top of the clamping plate. One end of two springs is fixedly installed on the inner side of the top wall of the guide housing. The two springs are respectively located outside the two guide rods. The other end of the spring is fixedly installed on the top of the clamping plate. Two round convex columns are fixedly installed at the bottom of the clamping plate, and the two round convex columns respectively penetrate through the top of the sleeve. The round convex columns are located inside the chute.

[0014] Further, a baffle is fixedly installed between the two sleeves. A hinge plate is fixedly installed at the bottom of the baffle. A push plate is hingedly installed on one side of the hinge plate close to the outlet.

[0015] Further, two connecting plates are fixedly installed on one side of the fixed table close to the outlet. One side of the connecting plate close to the outlet is fixedly connected to the support plate. An activity groove is provided on the side of the support plate away from the outlet. A protective cover is fixedly installed on one side of the support plate close to the outlet.

[0016] Further, the front sealing mechanism further includes a screw rod rotatably installed inside the support plate through a bearing. A spiral groove is provided on the outer side of the screw rod. A gear is fixedly installed on the outer side of the screw rod, and the gear is located inside the activity groove. Two tooth plates are placed inside the activity groove, and the two tooth plates are respectively meshed with the top and bottom of the gear. The two tooth plates are respectively fixedly connected to one side of the two half-sealing plates away from the fixed table. A moving sleeve is slidably arranged on the outer side of the screw rod. Extension plates are respectively arranged at the top and bottom of the moving sleeve. The extension plate at the bottom of the moving sleeve is located between the two connecting plates. A resisting rod is fixed on the inner side of the bottom wall of the moving sleeve, and the resisting rod is located inside the spiral groove. One end of a torsion spring piece is fixedly installed on the outer side of the end of the screw rod away from the fixed table, and the other end of the torsion spring piece is fixedly installed on the inner wall of the protective cover.

[0017] Advantages of the present invention:

[0018] (1) For the diffusion high-temperature furnace discharging device for diode silicon wafer production of the present invention, the design of the heating furnace equipped with an air delivery pipe and the movable sealing plate is adopted. When the telescopic rod drives the finished round silicon wafer to be pushed out, during the process of the movable sealing plate pushing out the hot air inside the heating furnace, the hot air is transported back to the inside of the heating cavity through the air delivery pipe by using the negative pressure formed by the movable sealing plate and the heating cavity, and is combined with the clamping mechanism to seal the heating furnace, which can greatly reduce the heat loss of the heating furnace and the outflow of hot air.

[0019] (2) The diffusion high-temperature furnace discharging device for diode silicon wafer production according to the present invention adopts the cooperation of a hinged push plate and a front sealing mechanism. When the telescopic rod drives the finished circular silicon wafer to be pushed out, it can drive two half-sealing plates to seal the outlet of the machine body, preventing the loss of heat inside the placement cavity and the outflow of hot air to the outside during the process of replacing the circular silicon wafer, and reducing the impact on the working environment.

[0020] (3) The diffusion high-temperature furnace discharging device for diode silicon wafer production according to the present invention adopts a double-sealing mechanism, which seals the heating furnace and the outlet during the process of pushing out the circular silicon wafer, and can automatically reset during the process of pushing back, reducing energy consumption, keeping the stability and gas inside the placement cavity and the heating cavity stable, and improving the processing effect of the circular silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention will be further described below with reference to the drawings and embodiments.

[0022] Figure 1 is a three-dimensional structural schematic diagram of the diffusion high-temperature furnace discharging device of the present invention;

[0023] Figure 2 is a three-dimensional structural schematic diagram of the machine body of the present invention;

[0024] Figure 3 is a three-dimensional structural schematic diagram of the heating furnace and the fixing table of the present invention;

[0025] Figure 4 is a three-dimensional structural schematic diagram of the opening of the heating furnace of the present invention;

[0026] Figure 5 is a sectional three-dimensional structural schematic diagram of the heating furnace of the present invention;

[0027] Figure 6 is a three-dimensional structural schematic diagram of the movable sealing plate of the present invention;

[0028] Figure 7 is a three-dimensional structural schematic diagram of the sleeve and the clamping mechanism of the present invention after being separated;

[0029] Figure 8 is a sectional three-dimensional structural schematic diagram of the clamping mechanism of the present invention;

[0030] Figure 9 is a three-dimensional structural schematic diagram of the baffle of the present invention;

[0031] Figure 10 is a three-dimensional structural schematic diagram of the support plate and the front sealing mechanism of the present invention;

[0032] Figure 11 is a three-dimensional structural schematic diagram of the support plate of the present invention;

[0033] Figure 12 Schematic three-dimensional structure diagram of the protective cover of the present invention;

[0034] Figure 13 Schematic three-dimensional structure diagram of the front sealing mechanism of the present invention;

[0035] Figure 14 Schematic three-dimensional structure diagram after the screw rod and the moving sleeve of the present invention are separated.

[0036] In the figure: 1, body; 2, placement cavity; 3, outlet; 4, fixed platform; 5, telescopic rod; 6, front sealing plate; 7, sleeve; 8, sealing plate; 9, carrier; 10, circular silicon wafer; 11, support frame; 12, heating furnace; 13, air duct; 14, guide rod; 15, movable sealing plate; 16, clamping rod; 17, clamping mechanism; 1701, guide shell; 1702, guide rod; 1703, spring; 1704, clamping plate; 1705, circular convex column; 18, chute; 19, baffle; 20, hinge plate; 21, push plate; 22, connecting plate; 23, support plate; 24, movable groove; 25, protective cover; 26, front sealing mechanism; 2601, screw rod; 2602, gear; 2603, toothed plate; 2604, semi-sealing plate; 2605, moving sleeve; 2606, torsion spring piece; 27, triangular plate. Detailed implementation manners

[0037] In order to make the technical means, technical features, achieved purposes and functions of the present invention easy to understand, the present invention will be further described below in conjunction with specific implementation manners.

[0038] Example: As Figures 1-14 shown, a diffusion high-temperature furnace discharging device for diode silicon wafer production according to the present invention includes a body 1. A placement cavity 2 is opened inside the body 1. An outlet 3 is penetrated and opened on one side of the body 1. Two telescopic rods 5 are fixedly installed inside the bottom wall of the placement cavity 2. The telescopic rods 5 penetrate through one side of the body 1. The output end of the telescopic rod 5 is fixedly installed with a front sealing plate 6, and the front sealing plate 6 is located on one side of the body 1. The front sealing plate 6 is used to seal the outlet 3.

[0039] Specifically, the body 1 can provide a space for opening the placement cavity 2. The placement cavity 2 can provide a placement space for the heating furnace 12. The body 1 can provide a space for penetrating and opening the outlet 3. The outlet 3 is used for the entry and exit of the circular silicon wafer 10. The placement cavity 2 can provide a placement space for the fixed platform 4. The front sealing plate 6 can seal the outlet 3 during the processing of the circular silicon wafer 10 to prevent heat and gas from escaping. When the output end of the telescopic rod 5 extends, by driving the front sealing plate 6 away from the body 1, the sealing of the outlet 3 is released, and then the circular silicon wafer 10 is moved out to the outside.

[0040] In this embodiment, a heating furnace 12 is provided inside the machine body 1. A heating chamber is formed inside the heating furnace 12, and one side is in an open state. A plurality of air ducts 13 are installed through the interior of the heating furnace 12. Two guide rods 14 are fixedly installed on the inner wall of the heating furnace 12 on the side away from the outlet 3. Two support frames 11 are fixedly installed on the top of the fixed platform 4. The heating furnace 12 is fixedly installed on the top of the support frames 11. One end of the air duct 13 close to the outlet 3 is the input end, and there are multiple pipe orifices at the input end of the air duct 13. The other end of the air duct 13 is the output end. Both ends of the air duct 13 penetrate through the interior of the heating furnace 12, and the main body of the air duct 13 is located outside the heating furnace 12.

[0041] Specifically, the fixed platform 4 can provide stable support for the heating furnace 12 through the support frames 11. The heating furnace 12 can provide through support for the air ducts 13. The heating furnace 12 can provide a space for forming the heating chamber. The heating chamber can provide a placement space for the silicon wafers 10 to be processed. One end of the heating furnace 12 is fixedly sealed, and the opening at the other end is for the silicon wafers 10 to enter and exit. When the opening of the heating furnace 12 is opened, the heat and air inside the heating chamber escape from the opening to the inside of the placement chamber 2. The air ducts 13 can provide a conveying channel for the air, enabling the air at the opening of the heating furnace 12 to move along the air ducts 13 to the fixedly sealed end of the heating chamber, reducing the escape of hot air from the heating chamber.

[0042] In this embodiment, a movable sealing plate 15 is slidably sleeved on the outside of the guide rod 14. A clamping rod 16 is fixedly installed on the side of the movable sealing plate 15 close to the outlet 3. A sleeve 7 is slidably arranged on the outside of the guide rod 14. A plurality of silicon wafers 10 are placed on the top of the sleeve 7. One end of the sleeve 7 is fixedly connected to the side of the front sealing plate 6 close to the outlet 3. The sleeve 7 penetrates through and is located inside the outlet 3. A sealing plate 8 is fixedly installed on the outside of the sleeve 7. The sealing plate 8 is in contact with the opening side of the heating furnace 12. The sealing plate 8 is used to seal the heating furnace 12. A plurality of carrier racks 9 are fixedly installed on the outside of the sleeve 7. The silicon wafers 10 are placed on the top of the carrier racks 9. A chute 18 is formed inside the top wall of the sleeve 7. A triangular plate 27 is fixedly installed on the top of the guide rod 14, and the triangular plate 27 is located inside the chute 18.

[0043] Specifically, the guiding rod 14 can provide sliding support for the movable sealing plate 15. The movable sealing plate 15 can seal the heating chamber. The movable sealing plate 15 can provide stable support for the clamping rod 16. The guiding rod 14 can provide stable support for the triangular plate 27. The highest point of the triangular plate 27 coincides with the end face of the opening of the heating furnace 12. When the circular silicon wafer 10 needs to be removed from the heating chamber, the movable sealing plate 15 can stop at the position of the opening end face of the heating furnace 12 to seal the opening of the heating furnace 12. The guiding rod 14 can provide guiding and supporting functions for the sleeve 7. The sleeve 7 can provide stable support for the sealing plate 8. The sealing plate 8 can provide a sealing function for the opening of the heating furnace 12. When processing the circular silicon wafer 10, the sealing plate 8 and the heating furnace 12 cooperate to form a closed space to wrap the circular silicon wafer 10 for processing. The sleeve 7 can provide stable support for the carrier 9. The carrier 9 can provide clamping support for the circular silicon wafer 10. The sleeve 7 can provide a space for the chute 18 to be formed. The chute 18 can provide a relative movement space for the triangular plate 27, so that when the guiding rod 14 slides relative to the sleeve 7, the position of the triangular plate 27 will not be affected.

[0044] In this embodiment, a clamping mechanism 17 is provided at the top of the sleeve 7. The clamping mechanism 17 includes a clamping plate 1704. The clamping mechanism 17 is assembled to change the position of the movable sealing plate 15 through the cooperation of the clamping plate 1704 and the clamping rod 16, so that the movable sealing plate 15 can seal the heating furnace 12 when the circular silicon wafer 10 is taken out. The clamping mechanism 17 further includes a guiding shell 1701. The guiding shell 1701 is fixedly installed at the top of the two sleeves 7. Two guide rods 1702 are fixedly installed on the inner side of the top wall of the guiding shell 1701. The guide rods 1702 penetrate through the top of the clamping plate 1704. One end of two springs 1703 is fixedly installed on the inner side of the top wall of the guiding shell 1701. The two springs 1703 are respectively located outside the two guide rods 1702. The other end of the spring 1703 is fixedly installed on the top of the clamping plate 1704. Two circular convex columns 1705 are fixedly installed at the bottom of the clamping plate 1704, and the two circular convex columns 1705 respectively penetrate through the top of the sleeve 7. The circular convex columns 1705 are located inside the chute 18.

[0045] Specifically, the sleeve 7 can provide a stable support for the guide shell 1701, the guide shell 1701 can provide a movable space for the clamping plate 1704, the guide rod 1702 can provide a guiding effect for the up and down movement of the clamping plate 1704, so that the clamping plate 1704 can move up and down stably, the spring 1703 can provide a reset effect for the clamping plate 1704, the clamping plate 1704 can provide a stable support for the round boss 1705, the sleeve 7 can provide a penetration space for the round boss 1705, and the slide groove 18 can provide a placement space for the round boss 1705. When the sleeve 7 drives the clamping mechanism 17 to move to the opening end close to the heating furnace 12, the sleeve 7 drives the round boss 1705 to contact the triangular plate 27, and the round boss 1705 continues to move, so that the round boss 1 Under the resistance of the triangular plate 27, 705 moves upward along the inclined surface of the triangular plate 27, and the circular boss 1705 drives the clamping plate 1704 to move upward along the inner side of the guide shell 1701, and the clamping plate 1704 moves upward along the outer side of the guide rod 1702, and squeezes the spring 1703 to compress and deform. When the circular boss 1705 moves to the top of the triangular plate 27, the clamping plate 1704 is separated from the clamping column, so that the clamping plate 1704 and the clamping column no longer have a clamping effect, and the circular boss 1705 moves downward from the top of the triangular plate 27. Under the resetting action of the spring 1703, the clamping plate 1704 is reset to its original position, so that the circular boss 1705 passes through the sleeve 7 again and is located on the inner side of the slide groove 18, so that it can be clamped with the clamping column again in the next activity.

[0046] In this embodiment, a baffle 19 is fixedly installed between the two sleeves 7 , a hinged plate 20 is fixedly installed at the bottom of the baffle 19 , and a push plate 21 is hingedly installed on one side of the hinged plate 20 close to the outlet 3 .

[0047] Specifically, the sleeve 7 can provide a stable support for the baffle 19, and the baffle 19 can provide a rotation support for the push plate 21 through the hinge plate 20. At the same time, when the push plate 21 rotates downward counterclockwise to a vertical state, the hinge plate 20 can provide a limiting effect for the push plate 21, and can prevent the push plate 21 from continuing to rotate counterclockwise. When the push plate 21 moves out of the inner side of the heating chamber, due to the certain height between the heating furnace 12 and the top of the fixed platform 4, the push plate 21 rotates downward counterclockwise to a vertical state under the action of its own gravity. When the push plate 21 enters the inner side of the heating chamber again, the push plate 21 rotates upward clockwise under the action of the open end face of the heating furnace 12, so that the push plate 21 can enter the placement chamber 2, so that the push plate 21 will not have a hard collision with the heating furnace 12.

[0048] In this embodiment, two connecting plates 22 are fixedly installed on the side of the fixed platform 4 close to the outlet 3. The side of the connecting plate 22 close to the outlet 3 is fixedly connected to the support plate 23. A movable groove 24 is provided on the side of the support plate 23 away from the outlet 3. A protective cover 25 is fixedly installed on the side of the support plate 23 close to the outlet 3.

[0049] Specifically, the fixed platform 4 can provide stable support for the two connecting plates 22, and the connecting plates 22 can not only provide stable support for the support plates 23, but also the two connecting plates 22 can provide limiting effect for the movable sleeve 2605, thereby preventing the movable sleeve 2605 from rotating. The support plates 23 can provide opening space for the movable groove 24, and the movable groove 24 can provide movable space for the front sealing mechanism 26, and the protective cover 25 can provide placement space for the torsion spring piece 2606.

[0050] In this embodiment, a support plate 23 is provided at a position near the outlet 3 on the inner side of the placement chamber 2, and a front sealing mechanism 26 is provided on the inner side of the support plate 23, and the front sealing mechanism 26 includes two half-sealing plates 2604; the front sealing mechanism 26 is assembled to seal the outlet 3 through the two half-sealing plates 2604 when the round silicon wafer 10 is taken out, and the front sealing mechanism 26 also includes a spiral rod 2601, and the spiral rod 2601 is rotatably mounted inside the support plate 23 through a bearing, and a spiral groove is provided on the outer side of the spiral rod 2601, and a gear 2602 is fixedly installed on the outer side of the spiral rod 2601, and the gear 2602 is located on the inner side of the movable groove 24, and two tooth plates 260 are placed on the inner side of the movable groove 24. 3, and the two tooth plates 2603 are respectively meshed with the top and bottom of the gear 2602, the two tooth plates 2603 are respectively fixedly connected to the two half-sealing plates 2604 on the side away from the fixed platform 4, a moving sleeve 2605 is slidably provided on the outer side of the spiral rod 2601, and the top and bottom of the moving sleeve 2605 are respectively provided with extension plates, and the extension plate at the bottom of the moving sleeve 2605 is located between the two connecting plates 22, an interference rod is fixed on the inner side of the bottom wall of the moving sleeve 2605, and the interference rod is located on the inner side of the spiral groove, one end of the torsion spring 2606 is fixedly installed on the outer side of one end of the spiral rod 2601 away from the fixed platform 4, and the other end of the torsion spring 2606 is fixedly installed on the inner wall of the protective cover 25.

[0051] Specifically, the support plate 23 can provide rotational support for the spiral rod 2601 through the bearing, the surface of the spiral rod 2601 can provide a space for the spiral groove, the spiral rod 2601 can provide sliding support for the movable sleeve 2605, the extension plate at the top of the movable sleeve 2605 can interfere with the push plate 21, the extension plate at the bottom of the movable sleeve 2605 can cooperate with the two connecting plates 22 to prevent the movable sleeve 2605 from rotating, and the inner side of the movable sleeve 2605 can provide a stable support for the interference rod. When the push plate 21 drives the movable sleeve 2605 to move to the left, the movable sleeve 2605 slides to the left under the limiting action of the extension plate at the bottom and the two connecting plates 22, so that the movable sleeve 2605 interferes with the spiral groove of the spiral rod 2601 through the inner interference rod, and the spiral rod 2601 rotates under the interference, and the spiral sleeve 2605 The rotating rod 2601 can provide a stable support for the gear 2602 and one end of the torsion spring 2606, so that when the spiral rod 2601 rotates, it can drive the torsion spring 2606 to contract, increase the elastic potential energy of the torsion spring 2606, so that the spiral rod 2601 can be reset. At the same time, the rotation of the gear 2602 can use the meshing action with the two tooth plates 2603 to drive the two tooth plates 2603 to move towards each other. The two tooth plates 2603 move along the guide groove under the guidance of the movable groove 24, so that the tooth plates 2603 drive the two half-sealing plates 2604 to approach each other. When the carrier 9 and the round silicon wafer 10 are completely moved out from the outlet 3, the two half-sealing plates 2604 seal the outlet 3, so that after the carrier 9 is moved out, the placement chamber 2 is in a sealed state, thereby reducing the hot air inside the placement chamber 2 from escaping to the outside.

[0052] Working principle: when the staff needs to take out the processed round silicon wafer 10, the telescopic rod 5 is extended through the control console, so that the output end of the telescopic rod 5 drives the front sealing plate 6 and the sealing plate 8 to move toward the front, the front sealing plate 6 moves to open the outlet 3, and the sealing plate 8 moves to open the opening of the heating furnace 12, and the front sealing plate 6 drives the sleeve 7 to move, so that the sleeve 7 drives the movable sealing plate 15 to move toward the front through the clamping action of the clamping plate 1704 and the clamping rod 16. When the movable sealing plate 15 moves toward the front, the movable sealing plate 15 gradually pushes the hot air on the inner side of the heating chamber on the left side to the inner side of the placement chamber 2, and at the same time, the pressure inside the heating chamber on the right side of the movable sealing plate 15 is reduced, so that the heating chamber on the right side of the movable sealing plate 15 absorbs air through the air duct 13, so that the air duct 13 transports the hot air on the left side of the movable sealing plate 15 to the heating chamber on the right side of the movable sealing plate 15, thereby reducing the discharge of hot air inside the heating chamber and reducing the heat loss inside the heating furnace 12;

[0053] When the sleeve 7 drives the clamping mechanism 17 to move to the opening end close to the heating furnace 12, the sleeve 7 drives the round convex column 1705 to contact the triangular plate 27. The round convex column 1705 continues to move, so that the round convex column 1705 moves upward along the inclined surface of the triangular plate 27 under the resistance of the triangular plate 27. The round convex column 1705 drives the clamping plate 1704 to move upward along the inner side of the guide housing 1701. The clamping plate 1704 moves upward along the outer side of the guide rod 1702 and compresses the spring 1703 to deform. When the round convex column 1705 moves to the top of the triangular plate 27, the clamping plate 1704 separates from the clamping column, so that the clamping plate 1704 no longer has a clamping effect on the clamping column, and the movable sealing plate 15 stops moving further after losing the clamping effect. The movable sealing plate 15 stops at the opening end of the heating furnace 12, so that the movable sealing plate 15 seals the heating furnace 12, thereby preventing the hot air inside the heating furnace 12 from escaping to the inside of the placement cavity 2, and reducing the heat loss inside the heating furnace 12 again;

[0054] The output end of the telescopic rod 5 continues to move, so that the sleeve 7 drives the baffle 19 out of the inside of the heating furnace 12. The baffle 19 drives the push plate 21 out of the inside of the heating furnace 12 through the hinge plate 20. When the push plate 21 no longer contacts the heating furnace 12, the push plate 21 rotates downward under the action of its own gravity, so that the push plate 21 rotates to the vertical state. The telescopic rod 5 continues to drive the sleeve 7 to move, so that the sleeve 7 drives the vertical push plate 21 to contact the extension plate at the top of the moving sleeve 2605. The push plate 21 has a tendency to continue rotating under the reaction force of the moving sleeve 2605, but the push plate 21 no longer rotates under the support of the hinge plate 20. Thus, the push plate 21 drives the moving sleeve 2605 to move to the left. At the same time, the moving sleeve 2605 will not rotate under the limiting action of the extension plate at the bottom and the two connecting plates 22. The moving sleeve 2605 makes the contact rod on the inner side contact with the spiral groove of the spiral rod 2601 through the contact rod on the inner side. The spiral rod 2601 rotates under the contact action, so that the contact rod drives the outer gear 2602 to rotate. The rotation of the gear 2602 drives the two toothed plates 2603 to move in the direction close to each other by using the meshing action with the two toothed plates 2603. The two toothed plates 2603 move along the guide groove under the guiding action of the moving groove 24, so that the toothed plates 2603 drive the two half sealing plates 2604 to approach each other. When the carrier 9 and the round silicon wafer 10 are completely removed from the outlet 3, the two half sealing plates 2604 seal the outlet 3. After the carrier 9 is removed, the placement cavity 2 is in a sealed state, so that the hot air inside the placement cavity 2 can be reduced from escaping to the outside, the influence of the hot air generated by the heating furnace 12 on the working environment can be reduced, and the heat loss inside the placement cavity 2 can also be reduced;

[0055] After the staff replaces the circular silicon wafer 10, the output end of the telescopic rod 5 is controlled to contract, causing the push plate 21 to gradually move to the right. Since the output end of the telescopic rod 5 elongates, the spiral rod 2601 rotates to drive the torsion spring piece 2606 to contract, increasing the elastic potential energy of the torsion spring piece 2606. Therefore, when the output end of the telescopic rod 5 contracts, the rightward movement of the push plate 21 enables the torsion spring 1703 to release elastic potential energy, thereby driving the screw rod to rotate reversely, and further enabling the moving sleeve 2605 and the two half-sealing plates 2604 to reset;

[0056] The contraction of the output end of the telescopic rod 5 drives the sleeve 7 to move to the right, causing the circular convex column 1705 to drive the clamping plate 1704 to be clamped with the clamping column again under the action of the triangular plate 27, enabling the clamping mechanism to reset again.

[0057] The above shows and describes the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. The above embodiments and the descriptions in the specification only illustrate the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements all fall within the scope of the present invention claimed. The scope of the present invention claimed is defined by the appended claims and their equivalents.

Claims

1. A diffusion high-temperature furnace discharging device for producing diode silicon wafers, comprising a body (1), a placement cavity (2) is provided on the inner side of the body (1), and an outlet (3) is provided through one side of the body (1), characterized in that: A heating furnace (12) is arranged on the inner side of the machine body (1), and a plurality of air delivery pipes (13) are installed through the interior of the heating furnace (12); two guide rods (14) are fixedly installed on the inner wall of the heating furnace (12) on the side away from the outlet (3); a movable sealing plate (15) is slidably mounted on the outer side of the guide rods (14); a clamping rod (16) is fixedly installed on the side of the movable sealing plate (15) close to the outlet (3); and the outer side of the guide rod (14) is slidably mounted on the outer side of the guide rod (14). A sleeve (7) is provided, a plurality of round silicon wafers (10) are placed on the top of the sleeve (7), a clamping mechanism (17) is provided on the top of the sleeve (7), the clamping mechanism (17) comprises a clamping plate (1704), a support plate (23) is provided on the inner side of the placement cavity (2) near the outlet (3), a front sealing mechanism (26) is provided on the inner side of the support plate (23), and the front sealing mechanism (26) comprises two half sealing plates (2604); A clamping mechanism (17) is configured to change the position of the movable sealing plate (15) through the cooperation between the clamping plate (1704) and the clamping rod (16), so that the movable sealing plate (15) can seal the heating furnace (12) when the round silicon wafer (10) is taken out; A front sealing mechanism (26) which is configured to seal the outlet (3) through two half sealing plates (2604) when the round silicon wafer (10) is taken out; A fixed platform (4) is fixedly installed on the inner side of the bottom wall of the placement chamber (2), two telescopic rods (5) are fixedly installed inside the fixed platform (4), the telescopic rods (5) pass through one side of the machine body (1), a front sealing plate (6) is fixedly installed on the output end of the telescopic rods (5), and the front sealing plate (6) is located on one side of the machine body (1), and the front sealing plate (6) is used to seal the outlet (3); One end of the sleeve (7) is fixedly connected to a side of the front sealing plate (6) close to the outlet (3), the sleeve (7) passes through the inner side of the outlet (3), a sealing plate (8) is fixedly installed on the outer side of the sleeve (7), a heating chamber is provided on the inner side of the heating furnace (12), and one side is in an open state, the sealing plate (8) is in contact with the open side of the heating furnace (12), the sealing plate (8) is used to seal the heating furnace (12), a plurality of carriers (9) are fixedly installed on the outer side of the sleeve (7), and a round silicon wafer (10) is placed on the top of the carrier (9); Two support frames (11) are fixedly mounted on the top of the fixed platform (4); the heating furnace (12) is fixedly mounted on the top of the support frames (11); one end of the air supply pipe (13) close to the outlet (3) is an input end; the input end of the air supply pipe (13) has a plurality of pipe openings; the other end of the air supply pipe (13) is an output end; both ends of the air supply pipe (13) pass through the interior of the heating furnace (12); and the main body of the air supply pipe (13) is located outside the heating furnace (12).

2. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 1, characterized in that: A slide groove (18) is provided on the inner side of the top wall of the sleeve (7), a triangular plate (27) is fixedly installed on the top of the guide rod (14), and the triangular plate (27) is located on the inner side of the slide groove (18).

3. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 2, characterized in that: The clamping mechanism (17) further comprises a guide shell (1701), the guide shell (1701) being fixedly mounted on the top of the two sleeves (7), two guide rods (1702) being fixedly mounted on the inner side of the top wall of the guide shell (1701), the guide rods (1702) passing through the top of the clamping plate (1704), one end of two springs (1703) being fixedly mounted on the inner side of the top wall of the guide shell (1701), the two springs (1703) being respectively located on the outer sides of the two guide rods (1702), the other end of the springs (1703) being fixedly mounted on the top of the clamping plate (1704), two round bosses (1705) being fixedly mounted on the bottom of the clamping plate (1704), the two round bosses (1705) respectively passing through the top of the sleeves (7), the round bosses (1705) being located on the inner side of the slide groove (18).

4. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 3, characterized in that: A baffle (19) is fixedly installed between the two sleeves (7), a hinged plate (20) is fixedly installed at the bottom of the baffle (19), and a push plate (21) is hingedly installed on one side of the hinged plate (20) close to the outlet (3).

5. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 1, characterized in that: Two connecting plates (22) are fixedly mounted on one side of the fixing platform (4) close to the outlet (3); the connecting plate (22) is fixedly connected to a support plate (23) on one side close to the outlet (3); a movable groove (24) is provided on one side of the support plate (23) away from the outlet (3); and a protective cover (25) is fixedly mounted on one side of the support plate (23) close to the outlet (3).

6. The diffusion high temperature furnace discharge device for diode silicon wafer production according to claim 5, characterized in that: The front sealing mechanism (26) further comprises a spiral rod (2601), the spiral rod (2601) being rotatably mounted inside the support plate (23) via a bearing, a spiral groove being provided on the outer side of the spiral rod (2601), a gear (2602) being fixedly mounted on the outer side of the spiral rod (2601), and the gear (2602) being located on the inner side of the movable groove (24), two tooth plates (2603) being placed on the inner side of the movable groove (24), and the two tooth plates (2603) being respectively meshed with the top and bottom of the gear (2602), and the two tooth plates (2603) being respectively meshed with the two half sealing plates (2604) A side away from the fixed platform (4) is fixedly connected, a movable sleeve (2605) is slidably provided on the outer side of the spiral rod (2601), the top and bottom of the movable sleeve (2605) are respectively provided with extension plates, the extension plate at the bottom of the movable sleeve (2605) is located between the two connecting plates (22), a resistance rod is fixed on the inner side of the bottom wall of the movable sleeve (2605), and the resistance rod is located on the inner side of the spiral groove, one end of a torsion spring (2606) is fixedly installed on the outer side of one end of the spiral rod (2601) away from the fixed platform (4), and the other end of the torsion spring (2606) is fixedly installed on the inner wall of the protective cover (25).

Citation Information

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