Thin film material magnetoresistive effect measurement method and system, storage medium and program product

Abstract

The invention provides a thin film material magnetoresistive effect measurement method and system, a storage medium and a program product, and relates to the technical field of electrical measurement. The method comprises the following steps: controlling a power supply module to circularly electrify an electromagnetic device according to set current information; the electromagnetic device is used for generating a magnetic field after being electrified; the to-be-tested thin film device is arranged in the range of the magnetic field, and current is applied to the to-be-tested thin film device through the magnetic field; the set current information is used for indicating cycle measurement times and a power-on current value corresponding to each cycle measurement; in each cycle measurement, measurement data obtained by measuring the to-be-measured thin film device by the measurement module is obtained, and a magnetoresistance effect relation graph corresponding to the to-be-measured thin film device is drawn in real time and displayed based on the measurement data and the magnetic induction intensity corresponding to the magnetic field; the problems of low measurement efficiency and high cost of magnetoresistive effect measurement of a thin film device can be solved. The magnetic resistance effect measurement efficiency of the thin film device is improved; and meanwhile, the equipment and labor cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of electrical measurement technology, and in particular to a method, system, storage medium and program product for measuring magnetoresistance effect of thin film materials. Background Art

[0002] In the era of rapid development of informatization, the demand for information storage devices continues to grow. Modern storage devices require higher storage density, larger capacity, faster access speed, lower cost and smaller size. In order to meet this demand, magnetic random access memory (MRAM) has attracted much attention as a new storage technology. In the process of researching and developing this type of magnetic memory, measuring the Hall resistance change of magnetic thin film devices under current and magnetic field is a key experimental link.

[0003] At present, the conventional method for measuring the magnetoresistance effect of thin film devices includes: using a physical property measurement system (PPMS) or a VersaLab Physical Property Measurement System (VersaLab) to measure the magnetoresistance effect of thin film devices.

[0004] However, devices such as PPMS and VersaLab integrate multiple advanced functions and precise measurement modules. Each module needs to be coordinated and controlled by a centralized computer system. These modules need to be connected to multiple hardware interfaces and signal transmission systems, which increases the physical volume and technical complexity of the system. The operation is cumbersome and requires professional personnel to operate and maintain. As a result, the measurement of the magnetoresistance effect of thin film devices has the problems of low measurement efficiency and high cost. Summary of the invention

[0005] In view of this, the embodiments of the present invention provide a method, system, storage medium and program product for measuring the magnetoresistance effect of thin film materials to eliminate or improve one or more defects in the prior art, and solve the problem of low measurement efficiency and high cost in measuring the magnetoresistance effect of thin film devices.

[0006] One aspect of the present invention provides a method for measuring the magnetoresistance effect of thin film materials, which is applied to a measurement control device in a magnetoresistance effect measurement system. The magnetoresistance effect measurement system also includes a preset number of electromagnetic devices, a power supply module, and a measurement module. The control device is connected to the power supply module and the measurement module. The power supply module is also connected to the electromagnetic device. The method includes the following steps: According to the set current information, the power supply module is controlled to cyclically energize the electromagnetic device; the electromagnetic device is used to generate a magnetic field after being energized; the thin film device to be tested is set within the range of the magnetic field, and current is applied to the thin film device to be tested through the magnetic field; the set current information is used to indicate the number of cycle measurements and the power-on current value corresponding to each cycle measurement; In each cycle measurement, the measurement module obtains measurement data of the thin film device to be measured, and based on the measurement data and the magnetic induction intensity corresponding to the magnetic field, a magnetoresistance effect relationship diagram corresponding to the thin film device to be measured is drawn in real time and displayed.

[0007] In some embodiments of the present invention, the set current information includes a first preset current value, a second preset current value and a step current value; before controlling the power supply module to cyclically power on the electromagnetic device according to the set current information, the method further includes: The number of cycle measurements is determined based on the first preset current value, the second preset current value, and the step current value.

[0008] In some embodiments of the present invention, controlling the power supply module to cyclically power on the electromagnetic device according to the set current information includes: Based on the set current information, determine the corresponding current value of the electromagnetic device in this measurement; When the power-on current value is greater than 0, the power supply module is controlled to power on the electromagnetic device according to the power-on current value and the preset power-on duration, and the power-on current direction of the electromagnetic device is set to a positive direction; The current cycle number is determined, and when the current cycle number is less than the cycle measurement number, a step of determining a current value of the electromagnetic device corresponding to the current measurement is performed.

[0009] In some embodiments of the present invention, when the power-on current value is less than 0, the method further includes: Controlling the power supply module to energize the electromagnetic device according to the energizing current value and the preset energizing duration, and setting the energizing current direction of the electromagnetic device to a negative direction; The current cycle number is determined, and when the current cycle number is less than the cycle measurement number, a step of determining a current value of the electromagnetic device corresponding to the current measurement is performed.

[0010] In some embodiments of the present invention, after determining the corresponding on-current value of the electromagnetic device in this measurement based on the set current information, the method further includes: determining the magnetic induction intensity based on the on-current value.

[0011] In some embodiments of the present invention, the measurement module includes a current measurement submodule and a voltage measurement submodule; in each cycle measurement, obtaining measurement data obtained by the measurement module from measuring the thin film device to be measured includes: Obtaining a measurement value corresponding to the current measurement submodule as a device current corresponding to the thin film device to be measured; Obtaining a measurement value corresponding to the voltage measurement submodule as a device voltage corresponding to the thin film device to be measured; The device resistance is calculated based on the device current and device voltage.

[0012] In some embodiments of the present invention, in each cycle measurement, before obtaining the measurement data obtained by the measurement module from measuring the thin film device to be measured, the method further includes: initializing the current measurement submodule and the voltage measurement submodule.

[0013] Another aspect of the present invention provides a system for measuring the magnetoresistance effect of thin film materials, characterized in that the system comprises a measurement control device, a preset number of electromagnetic devices, a power supply module and a measurement module; wherein the measurement control device is connected to the power supply module and the measurement module; and the power supply module is also connected to the electromagnetic device; The measurement control device is used to: control the power supply module to cyclically energize the electromagnetic device according to the set current information; so that the electromagnetic device generates a magnetic field after being energized; the thin film device to be measured is set within the range of the magnetic field, and the current is applied to the thin film device to be measured through the magnetic field; the set current information is used to indicate the number of cyclic measurements and the energized current value corresponding to each cyclic measurement; The measuring module is used to: obtain the measured data of the thin film device to be measured in each cycle measurement; and send the measured data to the measuring control device; The measurement control device is also used to: obtain the measurement data obtained by the measurement module on the thin film device to be measured in each cycle measurement, and based on the measurement data and the magnetic induction intensity corresponding to the magnetic field, draw and display the magnetoresistance effect relationship diagram corresponding to the thin film device to be measured in real time.

[0014] Another aspect of the present invention provides a computer-readable storage medium having a computer program / instruction stored thereon, which, when executed by a processor, implements the steps of the method for measuring the magnetoresistance effect of thin film materials as described above.

[0015] Another aspect of the present invention provides a computer program product, comprising a computer program / instruction, which, when executed by a processor, implements the steps of the method for measuring the magnetoresistance effect of thin film materials as described above.

[0016] The method and device for measuring the magnetoresistance effect of thin film materials of the present invention can solve the problems of low measurement efficiency and high cost in measuring the magnetoresistance effect of thin film devices. By controlling the power supply module to circulate power on the electromagnetic device, the measurement data of the magnetic induction intensity and the thin film device are automatically collected, and a magnetoresistance effect diagram is drawn. The operator only needs to set the current parameters to realize the magnetoresistance effect measurement of the thin film device, which simplifies the measurement operation process and reduces the difficulty of manual operation, thereby improving the efficiency and operability of the magnetoresistance effect measurement of the thin film device. At the same time, it avoids dependence on complex and expensive equipment and reduces equipment and labor costs.

[0017] Additional advantages, purposes, and features of the present invention will be described in part in the following description, and will become apparent to those skilled in the art after studying the following, or may be learned from the practice of the present invention. The purposes and other advantages of the present invention may be achieved and obtained by the structures specifically indicated in the specification and the accompanying drawings.

[0018] Those skilled in the art will appreciate that the objectives and advantages that can be achieved with the present invention are not limited to the above specific description, and the above and other objectives that can be achieved by the present invention will be more clearly understood from the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings described herein are used to provide a further understanding of the present invention, constitute a part of the present application, and do not constitute a limitation of the present invention. In the drawings: Figure 1 A schematic diagram of the structure of a thin film device magnetoresistance effect measurement system provided by an embodiment of the present invention.

[0020] Figure 2 A flow chart of a method for measuring magnetoresistance effect of a thin film device provided by one embodiment of the present invention.

[0021] Figure 3 A schematic diagram of a storage path setting provided by an embodiment of the present invention.

[0022] Figure 4 A schematic diagram of setting the number of cyclic measurements provided by an embodiment of the present invention.

[0023] Figure 5 A schematic diagram of magnetic induction intensity calculation provided by an embodiment of the present invention.

[0024] Figure 6 A flow chart of a method for measuring magnetoresistance effect of a thin film device provided by another embodiment of the present invention. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments and the accompanying drawings. Here, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention.

[0026] It should also be noted that, in order to avoid obscuring the present invention due to unnecessary details, only structures and / or processing steps closely related to the solutions according to the present invention are shown in the accompanying drawings, while other details that are not closely related to the present invention are omitted.

[0027] It should be emphasized that the term “include / comprises” when used herein refers to the presence of features, elements, steps or components, but does not exclude the presence or addition of one or more other features, elements, steps or components.

[0028] It should also be noted that, unless otherwise specified, the term “connection” herein may refer not only to a direct connection but also to an indirect connection involving an intermediate.

[0029] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, the same reference numerals represent the same or similar components, or the same or similar steps.

[0030] Figure 1 FIG. 1 is a schematic diagram of a magnetoresistance effect measurement system provided by an embodiment of the present application. Figure 1 As shown, the system at least includes: a measurement control device 110, a preset number of electromagnetic devices 120, a power supply module 130 and a measurement module 140. The measurement control device 110 is connected to the power supply module 130 and the measurement module 140; the power supply module 130 is also connected to the electromagnetic device 120.

[0031] The measurement control device 110 refers to a terminal that controls the power supply module 130 to power on the electromagnetic device 120 and draws a magnetoresistance effect relationship diagram of the thin film device based on the measurement data collected after power on.

[0032] In some embodiments of the present invention, the measurement and control device 110 may be a mobile phone, a computer, or a tablet computer, etc. This embodiment does not limit the device type of the measurement and control device 110 .

[0033] In order to improve the convenience and efficiency of the magnetoresistance effect test of the thin film device to be tested, a pre-written measurement program is run in the measurement control device 110, and the measurement control device 110, a preset number of electromagnetic devices 120, a power supply module 130 and a measurement module 140 are interconnected to construct an intuitive and fast method for measuring the magnetoresistance effect of thin film devices. The measurement program can accurately measure the resistance change of the thin film device to be tested under different currents and magnetic fields, and display the measured magnetoresistance effect data in real time in the form of a two-dimensional chart, and store it in real time according to a preset storage path, which can meet the test requirements, is low in cost, and is easy to implement.

[0034] For example: Reference Figure 3 Before measuring, the storage path and remark information corresponding to the measurement data are set by the measurement control device 110; after obtaining the measurement data and the magnetic induction intensity corresponding to the current magnetic field, the measurement data and the magnetic induction intensity are stored correspondingly according to the preset storage path.

[0035] The measurement program is a program written based on a graphical programming language, wherein the graphical programming language includes but is not limited to LabVIEW (Laboratory Virtual Instrument Engineering Workbench) or MATLAB / Simulink. In actual implementation, the measurement program can also be a program written based on programming tools such as LabWindows / CVI or Simatic STEP 7.

[0036] Specifically, the measurement control device 110 is used to: control the power supply module 130 to cyclically power on the electromagnetic device 120 according to the set current information; so that the electromagnetic device 120 generates a magnetic field after being powered on; the thin film device to be measured is set within the range of the magnetic field, and current is applied to the thin film device to be measured through the magnetic field; the set current information is used to indicate the number of cyclic measurements and the power-on current value corresponding to each cyclic measurement.

[0037] The measurement module 140 is used to: obtain measurement data from the thin film device to be measured in each cycle measurement; and send the measurement data to the measurement control device 110 .

[0038] The measurement control device 110 is also used to: obtain the measurement data obtained by the measurement module 140 on the thin film device to be measured in each cycle measurement, and based on the measurement data and the magnetic induction intensity corresponding to the magnetic field, draw and display the magnetoresistance effect relationship diagram corresponding to the thin film device to be measured in real time.

[0039] The electromagnetic device 120 refers to a device that generates a magnetic field that can cover the thin film device by transmitting current through a conductor, including but not limited to an electromagnet, an electromagnetic coil, or a superconducting magnet, etc. In actual implementation, the electromagnetic device 120 can also be an electromagnetic regulator that adjusts the intensity of the generated magnetic field by precisely controlling the current.

[0040] In some embodiments of the present invention, the size of the electromagnetic device can be flexibly set based on demand.

[0041] In some embodiments of the present invention, the number of electromagnetic devices 120 used for thin film devices of different sizes may be different. For example, in the case where the thin film device to be tested is small in size (e.g., a thin film device to be tested with a length / width greater than 1 mm and less than 50 mm), usually one electromagnetic device is provided to provide the required magnetic field. For a thin film device to be tested with a large area or high precision (e.g., a thin film device to be tested with a length / width greater than 50 mm), the number of electromagnetic devices 120 is more than two, and more than two electromagnetic devices 120 are connected in parallel to ensure that the magnetic field covers the thin film device to be tested.

[0042] In actual implementation, it is possible to measure the magnetoresistance effect of multiple thin film devices to be tested at the same time. In the case of multiple thin film devices to be tested, the electromagnetic device 120 is matched based on the number of thin film devices to be tested, so that one thin film device to be tested corresponds to at least one electromagnetic device 120, so that the magnetoresistance effect of multiple identical or different thin film devices to be tested can be measured at the same time, thereby improving the measurement efficiency.

[0043] refer to Figure 1 The electromagnetic device 120 is connected to the power supply module 130, and a magnetic field is generated by the power supply module 130. The power supply module 130 can be a battery pack, a battery module or a constant current power supply. The power supply module 130 is also connected to the measurement and control device 110, and the current and voltage provided by the power supply module 130 are controlled by the measurement and control device 110.

[0044] In some embodiments of the present invention, control information input by a user is received through an input device connected to the measurement control device 110, including setting current information and / or the number of measurements, etc. The input device includes but is not limited to a mouse, a keyboard, or a touch-controlled display device, etc. After receiving the control information input by the user, the measurement control device 110 controls the power supply module 130 to supply power to the electromagnetic device 120, so that the electromagnetic device 120 generates a magnetic field after being powered on, and applies current to the thin film device to be measured.

[0045] In some embodiments of the present invention, the thin film device to be tested and the electromagnetic device 120 are arranged on a sample stage of a multi-source port. The multi-source port includes a power supply port corresponding to the power supply module 130, and the power supply module 130 is connected to the electromagnetic device 120 through the power supply port to supply power to the electromagnetic device 120. At the same time, the multi-source port also includes a measurement module connection port for connecting to the measurement module 140, so that the measurement module 140 can measure the corresponding device information of the thin film device to be tested under the magnetic field, including device current, device voltage or device resistance.

[0046] At the same time, reference Figure 1 The measurement control device 110 is also connected to the measurement module 140 to obtain the measurement data measured by the measurement module 140 and store the measurement data according to the storage path input by the user.

[0047] Alternatively, the measurement module 140 refers to a device capable of measuring the resistance of a thin film device, including but not limited to a four-point probe, an ohmmeter, or a high resistance meter. Accordingly, the measurement control device 110 is also used to: obtain the measurement value of the measurement module to obtain the device resistance corresponding to the thin film device; and store the device resistance according to a preset storage path.

[0048] In actual implementation, the measurement control device 110 may also send the magnetoresistance effect relationship diagram to a designated device and display it. This embodiment does not limit the manner of displaying the magnetoresistance effect relationship diagram.

[0049] In some embodiments of the present invention, the magnetoresistance effect relationship diagram includes one or more of the following diagram types: a magnetoresistance-magnetic field (MR-H) curve diagram, a magnetoresistance-temperature (MR-T) relationship diagram, a relationship between a resistance-current (RI) curve and a magnetic field, or a magnetoresistance ratio (MR Ratio) diagram, etc. The magnetoresistance effect relationship diagram may also be a three-dimensional diagram or a two-dimensional thermal diagram, and this embodiment does not limit the implementation method of the magnetoresistance effect relationship diagram.

[0050] The following is a detailed introduction to the method for measuring the magnetoresistance effect of thin film devices provided in the present application.

[0051] like Figure 2 As shown, the embodiment of the present application provides a method for measuring the magnetoresistance effect of a thin film device. Figure 1 Taking the measurement control device in the system shown in FIG. 1 as an example, the method includes at least the following steps: Step S201, controlling the power supply module to cyclically power the electromagnetic device according to the set current information.

[0052] The electromagnetic device is used to generate a magnetic field after being powered on; the thin film device to be tested is set within the range of the magnetic field, and a current is applied to the thin film device to be tested through the magnetic field. The set current information is used to indicate the number of cycle measurements and the corresponding power-on current value for each cycle measurement.

[0053] In some embodiments of the present invention, the set current information refers to the current information input into the measurement and control device by the user through an input device connected to the measurement and control device; or, it is the current information sent to the measurement and control device by the user through other devices connected to the measurement and control device for communication.

[0054] After receiving the set current information, the measurement and control device controls the power supply module to circulate power to the electromagnetic device to generate a magnetic field.

[0055] In some embodiments of the present invention, the set current information includes a first preset current value, a second preset current value and a step current value. The first preset current value is the minimum current applied by the power supply module to the electromagnetic device; the second preset current value refers to the maximum current applied by the power supply module to the electromagnetic device; and the step current value refers to a fixed increment of each current change.

[0056] In some embodiments of the present invention, the power supply module is controlled to supply power to the electromagnetic device according to different currents by measuring the control device according to the set current information, and at least one set of magnetoresistance effect data is obtained by multiple measurements. During the first measurement, the power supply module is controlled to supply power to the electromagnetic device according to the first preset current value, and then the current value provided by the power supply module is increased in sequence according to the step current value until the preset measurement condition is reached. The preset measurement conditions include but are not limited to the following situations: First, the current value provided by the power supply module is greater than the second preset current value.

[0057] After the measurement control device obtains the power-on current value corresponding to the next cycle measurement according to the step current value and the power-on current value corresponding to the current cycle measurement, the power-on current value corresponding to the next cycle measurement is compared with the second preset current value. When the power-on current value corresponding to the next cycle measurement is greater than the second preset current value, after the current cycle measurement is completed, the power supply module is controlled to stop supplying power and the measurement ends.

[0058] Specifically, according to the set current information, the power supply module is controlled to cyclically power on the electromagnetic device, and also includes: determining the power-on current value corresponding to the current cycle measurement; comparing the power-on current value with the second preset current value to obtain a comparison result; when the comparison result indicates that the power-on current value is less than or equal to the second preset current value, controlling the power supply module according to the power-on current value.

[0059] When the comparison result indicates that the current value is greater than the second preset current value, the power supply module is controlled to stop supplying power and a prompt message is issued. The prompt message is used to prompt that the measurement is completed. It includes voice prompt information and / or text enhancement information. When the prompt information is a voice prompt information, the measurement control device also includes an audio output module.

[0060] The second is that the number of measurements reaches a predetermined number of cyclic measurements.

[0061] The predetermined number of cyclic measurements may be calculated by the measurement control device based on the set current information, or may be preset by the user through the measurement control device.

[0062] In the case where the predetermined number of cycle measurements is calculated by the measurement control device based on the set current information, reference Figure 4 , the predetermined number of measurements calculated by the measurement control device based on the set current information can be expressed by the following formula: Wherein, M represents the predetermined number of cycle measurements; D1 represents the first preset current value; D2 represents the second preset current value; and D3 represents the step current value.

[0063] Specifically, before controlling the power supply module to cyclically power on the electromagnetic device according to the set current information, the method further includes: determining the number of cyclic measurements based on the first preset current value, the second preset current value and the step current value.

[0064] In each cycle of measurement, the current direction and strength in the electromagnetic device are adjusted by controlling the power supply module, thereby affecting the size and direction of the magnetic field in the coil of the electromagnetic device. When the current value is greater than 0, the current value applied by the electromagnetic device is set to a positive value (i.e., a positive current is applied), so that the electromagnetic device generates a positive magnetic field. The specific magnetic field strength is proportional to the applied current. When the current value is less than 0, the current value of the electromagnet is set to a negative value (i.e., a reverse current is applied), and the electromagnetic device will generate a magnetic field in the opposite direction, that is, the direction of the magnetic field is opposite to that when a positive current is applied.

[0065] Specifically, according to the set current information, the power supply module is controlled to cyclically power on the electromagnetic device, including: based on the set current information, determining the power-on current value corresponding to the electromagnetic device in this measurement; when the power-on current value is greater than 0, controlling the power supply module to power on the electromagnetic device according to the power-on current value and the preset power-on duration, and setting the power-on current direction of the electromagnetic device to a positive direction; determining the current number of cycles, and when the current number of cycles is less than the number of cycle measurements, executing the step of determining the power-on current value corresponding to the electromagnetic device in this measurement.

[0066] When the power-on current value is less than 0, it also includes: controlling the power supply module to power on the electromagnetic device according to the power-on current value and the preset power-on duration, and setting the power-on current direction of the electromagnetic device to a negative direction; determining the current number of cycles, and when the current number of cycles is less than the number of cycle measurements, executing the step of determining the power-on current value corresponding to the electromagnetic device in this measurement.

[0067] In some embodiments of the present invention, magnetic induction intensity refers to the magnetic induction intensity of the magnetic field generated by the electromagnetic device after power is supplied. In practical applications, the magnetic field intensity of the electromagnetic device usually depends on the magnitude of the current and the structure of the electromagnetic device. When the design of the electromagnetic device is fixed, the intensity of the magnetic field can be accurately controlled by adjusting the magnitude of the power supply current. Based on this, after determining the power supply current value, the measurement control device can convert the power supply current value to obtain the magnetic induction intensity.

[0068] Specifically, after determining the current value corresponding to the electromagnetic device in this measurement based on the set current information, the method further includes: determining the magnetic induction intensity based on the current value.

[0069] refer to Figure 5 , the magnetic induction intensity can be expressed by the following formula: Wherein, M represents the predetermined number of cycle measurements; D1 represents the first preset current value; D3 represents the step current value; A represents the conversion factor (reference Figure 5 , is 0.13), which can be recalibrated according to the specific electromagnetic device.

[0070] In actual implementation, the magnetic induction intensity of the magnetic field can also be measured by a magnetic induction intensity measurement module (such as a Hall sensor or a magnetometer, etc.). Accordingly, the measurement module also includes a magnetic induction intensity measurement module. The measurement control device is connected to the magnetic induction intensity measurement module. In each cycle of measurement, after the power supply module is controlled to supply power to the electromagnetic device according to the current power-on current value so that the electromagnetic device generates a new magnetic field, the magnetic induction intensity of the magnetic field is obtained by reading the measurement value of the magnetic induction intensity measurement module and stored according to the preset storage path.

[0071] In some embodiments of the present invention, the measurement module includes a current measurement submodule and a voltage measurement submodule. After the device voltage and device current corresponding to the thin film device to be measured are measured by the current measurement submodule and the voltage measurement submodule, the device resistance corresponding to the thin film device to be measured is calculated based on the device voltage and the device current, and is stored as measurement data according to a pre-set storage path.

[0072] Specifically, in each cycle measurement, the measurement data obtained by the measurement module on the thin film device to be measured is obtained, including: obtaining the measurement value corresponding to the current measurement submodule as the device current corresponding to the thin film device to be measured; obtaining the measurement value corresponding to the voltage measurement submodule as the device voltage corresponding to the thin film device to be measured; and calculating the device resistance based on the device current and the device voltage.

[0073] Alternatively, the measurement module refers to a device capable of measuring the resistance of a thin film device, including but not limited to a four-point probe, an ohmmeter or a high resistance meter. Accordingly, in each cycle measurement, it also includes: obtaining the measurement value of the measurement module to obtain the device resistance corresponding to the thin film device; and storing the device resistance according to a preset storage path.

[0074] In addition, in order to ensure the accuracy of the measurement results of the current measurement submodule and the voltage measurement submodule, it is necessary to initialize the current measurement submodule and the voltage measurement submodule before each measurement. Specifically, in each cycle measurement, before obtaining the measurement data obtained by the measurement module on the thin film device to be measured, it also includes: initializing the current measurement submodule and the voltage measurement submodule.

[0075] Step S202, in each cycle measurement, obtaining measurement data obtained by the measurement module on the thin film device to be measured, and based on the measurement data and the magnetic induction intensity corresponding to the magnetic field, drawing in real time and displaying the magnetoresistance effect relationship diagram corresponding to the thin film device to be measured.

[0076] In some embodiments of the present invention, the magnetoresistance effect relationship diagram includes one or more of the following diagram types: a magnetoresistance-magnetic field (MR-H) curve diagram, a magnetoresistance-temperature (MR-T) relationship diagram, a relationship between a resistance-current (RI) curve and a magnetic field, or a magnetoresistance ratio (MR Ratio) diagram, etc. The magnetoresistance effect relationship diagram may also be a three-dimensional diagram or a two-dimensional thermal diagram, and this embodiment does not limit the implementation method of the magnetoresistance effect relationship diagram.

[0077] In some embodiments of the present invention, after the measurement and control device draws the magnetoresistance effect relationship diagram corresponding to the thin film device, the magnetoresistance effect relationship diagram is displayed on the display module of the measurement and control device, or the measurement and control device sends the magnetoresistance effect relationship diagram to a designated device and displays it. This embodiment does not limit the method of displaying the magnetoresistance effect relationship diagram.

[0078] In summary, the method for measuring the magnetoresistance effect of a thin film device provided in the present embodiment controls the power supply module to cyclically energize the electromagnetic device according to the set current information; the electromagnetic device is used to generate a magnetic field after being energized; the thin film device to be measured is set within the range of the magnetic field, and a current is applied to the thin film device to be measured through the magnetic field; the set current information is used to indicate the number of cyclic measurements and the power-on current value corresponding to each cyclic measurement; in each cyclic measurement, the measurement data obtained by the measurement module for measuring the thin film device to be measured is obtained, and based on the measurement data and the magnetic induction intensity corresponding to the magnetic field, a magnetoresistance effect relationship diagram corresponding to the thin film device to be measured is drawn in real time and displayed; the problem of low measurement efficiency and high cost of magnetoresistance effect measurement of thin film devices can be solved; by controlling the power supply module to cyclically energize the electromagnetic device, the magnetic induction intensity and the measurement data of the thin film device are automatically collected, and the magnetoresistance effect diagram is drawn, and the operator only needs to set the current parameters to realize the magnetoresistance effect measurement of the thin film device, which simplifies the measurement operation process and reduces the difficulty of manual operation, and improves the efficiency and operability of the magnetoresistance effect measurement of the thin film device; at the same time, it avoids the dependence on complex and expensive equipment and reduces equipment and labor costs.

[0079] In order to more clearly understand the method for measuring the magnetoresistance effect of a thin film device provided by the present application, an example is given below to illustrate the method. Figure 6 , the method includes the following steps: Step S301, obtaining IP addresses corresponding to the measurement module and the electromagnetic device, and connecting with the measurement module and the electromagnetic device based on the IP addresses; Step S302, setting a storage path corresponding to the measurement data based on the received storage path information; Step S303, calculating the number of cycle measurements based on the received set current information; Step S304, initializing the measurement module; Step S305, determining the current value corresponding to this cycle based on the set current information; Step S306, determining whether the current value is greater than 0; if the current value is greater than 0, executing step S308; otherwise, executing step S307; Step S307, setting the current flow method to the negative direction, and controlling the power supply module to supply power to the electromagnetic device, and executing step S309; Step S308, setting the current flow method to a positive direction, and controlling the power supply module to supply power to the electromagnetic device; Step S309, determining the magnetic induction intensity of the magnetic field based on the current value, and storing it according to the storage path; Step S310, obtaining data measured by the measurement module, obtaining the device resistance corresponding to the thin film device and storing it according to the storage path; Step S311, based on the magnetic induction intensity of the magnetic field and the device resistance of the thin film device, a magnetoresistance effect relationship diagram is drawn in real time and displayed; Step S312, determining whether the number of cyclic measurements is completed; if the number of cyclic measurements is completed, ending the measurement; otherwise, executing step S304.

[0080] In summary, by controlling the power supply module to circulate power on the electromagnetic device, automatically collecting the measurement data of the magnetic induction intensity and the thin film device, and drawing the magnetoresistance effect diagram, the operator only needs to set the current parameters to realize the magnetoresistance effect measurement of the thin film device, which simplifies the measurement operation process and reduces the difficulty of manual operation, and improves the efficiency and operability of the magnetoresistance effect measurement of the thin film device; at the same time, it avoids the dependence on complex and expensive equipment and reduces equipment and labor costs.

[0081] The embodiment of the present invention also provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the aforementioned thin film device magnetoresistance effect measurement method are implemented. The computer-readable storage medium can be a tangible storage medium, such as a random access memory (RAM), a memory, a read-only memory (ROM), an electrically programmable ROM, an electrically erasable programmable ROM, a register, a floppy disk, a hard disk, a removable storage disk, a CD-ROM, or any other form of storage medium known in the technical field.

[0082] An embodiment of the present invention further provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the steps of the method for measuring the magnetoresistance effect of thin film materials as described above.

[0083] It should be understood by those skilled in the art that the exemplary components, systems and methods described in conjunction with the embodiments disclosed herein can be implemented in hardware, software or a combination of the two. Whether it is performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention. When implemented in hardware, it can be, for example, an electronic circuit, an application-specific integrated circuit (ASIC), appropriate firmware, a plug-in, a function card, etc. When implemented in software, the elements of the present invention are programs or code segments used to perform the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted on a transmission medium or a communication link via a data signal carried in a carrier.

[0084] It should be clear that the present invention is not limited to the specific configuration and processing described above and shown in the figures. For the sake of simplicity, a detailed description of the known method is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present invention is not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between the steps after understanding the spirit of the present invention.

[0085] In the present invention, features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, and / or combined with features of other embodiments or replace features of other embodiments.

[0086] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the embodiments of the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for measuring magnetoresistance effect of thin film materials, characterized in that: A measurement control device used in a magnetoresistance effect measurement system, wherein the magnetoresistance effect measurement system further comprises a preset number of electromagnetic devices, a power supply module and a measurement module; the control device is connected to the power supply module and the measurement module; the power supply module is also connected to the electromagnetic device; the method comprises the following steps: According to the set current information, the power supply module is controlled to cyclically energize the electromagnetic device; the electromagnetic device is used to generate a magnetic field after being energized; the thin film device to be tested is arranged within the range of the magnetic field, and current is applied to the thin film device to be tested through the magnetic field; the set current information is used to indicate the number of cyclic measurements and the energized current value corresponding to each cyclic measurement; In each measurement cycle, the measurement data obtained by the measurement module on the thin film device to be measured is obtained, and based on the measurement data and the magnetic induction intensity corresponding to the magnetic field, a magnetoresistance effect relationship diagram corresponding to the thin film device to be measured is drawn in real time and displayed.

2. The method for measuring the magnetoresistance effect of thin film materials according to claim 1, characterized in that: The set current information includes a first preset current value, a second preset current value and a step current value; before controlling the power supply module to cyclically power on the electromagnetic device according to the set current information, the method further includes: The number of cycle measurements is determined based on the first preset current value, the second preset current value, and the step current value.

3. The method for measuring the magnetoresistance effect of thin film materials according to claim 1, characterized in that: The step of controlling the power supply module to cyclically power the electromagnetic device according to the set current information includes: Based on the set current information, determining the current value of the electromagnetic device corresponding to the current measurement; When the power-on current value is greater than 0, the power supply module is controlled to power on the electromagnetic device according to the power-on current value and the preset power-on duration, and the power-on current direction of the electromagnetic device is set to a positive direction; Determine the current cycle number, and when the current cycle number is less than the cycle measurement number, perform the step of determining the corresponding current value of the electromagnetic device in this measurement.

4. The method for measuring the magnetoresistance effect of thin film materials according to claim 3, characterized in that: When the current value is less than 0, the method further includes: Controlling the power supply module to power on the electromagnetic device according to the power-on current value and the preset power-on duration, and setting the power-on current direction of the electromagnetic device to a negative direction; The current cycle number is determined, and when the current cycle number is less than the cycle measurement number, the step of determining the corresponding current value of the electromagnetic device in this measurement is performed.

5. The method for measuring the magnetoresistance effect of thin film materials according to claim 3, characterized in that: After determining the current value corresponding to the electromagnetic device in this measurement based on the set current information, the method further includes: determining the magnetic induction intensity based on the current value.

6. The method for measuring the magnetoresistance effect of thin film materials according to claim 1, characterized in that: The measuring module includes a current measuring submodule and a voltage measuring submodule; in each cycle measurement, obtaining the measurement data obtained by the measuring module from measuring the thin film device to be measured includes: Acquire a measurement value corresponding to the current measurement submodule as a device current corresponding to the thin film device to be measured; Acquire a measurement value corresponding to the voltage measurement submodule as a device voltage corresponding to the thin film device to be measured; The device resistance is calculated based on the device current and the device voltage.

7. The method for measuring the magnetoresistance effect of thin film materials according to claim 6, characterized in that: In each cycle measurement, before obtaining the measurement data obtained by the measurement module on the thin film device to be measured, the method further includes: initializing the current measurement submodule and the voltage measurement submodule.

8. A thin film material magnetoresistance effect measurement system, characterized in that: The system comprises a measurement control device, a preset number of electromagnetic devices, a power supply module and a measurement module; wherein the measurement control device is connected to the power supply module and the measurement module; the power supply module is also connected to the electromagnetic device; The measurement control device is used to: control the power supply module to cyclically energize the electromagnetic device according to the set current information, so that the electromagnetic device generates a magnetic field after being energized; the thin film device to be tested is arranged within the range of the magnetic field, and current is applied to the thin film device to be tested through the magnetic field; the set current information is used to indicate the number of cyclic measurements and the energized current value corresponding to each cyclic measurement; The measuring module is used to: obtain the measurement data from the thin film device to be measured in each cycle measurement; and send the measurement data to the measurement control device; The measurement control device is also used to: obtain the measurement data obtained by the measurement module on the thin film device to be measured in each cycle measurement, and based on the measurement data and the magnetic induction intensity corresponding to the magnetic field, draw and display the magnetoresistance effect relationship diagram corresponding to the thin film device to be measured in real time.

9. A computer-readable storage medium having a computer program / instruction stored thereon, characterized in that: When the computer program / instructions are executed by a processor, the steps of the method for measuring the magnetoresistance effect of thin film materials as claimed in any one of claims 1 to 7 are implemented.

10. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instructions are executed by a processor, the steps of the method for measuring the magnetoresistance effect of thin film materials as claimed in any one of claims 1 to 7 are implemented.

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