Photoresist removal method and system

Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a photoresist removal method and system.The photoresist removal method comprises the steps that a first deionized solution with carbon dioxide of the target concentration is provided; soaking a wafer with photoresist on the first surface in the first deionized solution for a target duration under the conditions of first temperature and first pressure; and in response to the end of the target duration, flushing the wafer by using a second deionized solution to obtain a target wafer from which the photoresist is removed. According to the scheme, the photoresist can be effectively removed by using a conventional chemical reagent, so that the wastewater treatment difficulty is reduced.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a photoresist removal method and system. Background Art

[0002] In the manufacturing process of semiconductor devices, photolithography technology is usually used to produce patterns. That is, photoresist is coated on the wafer, and ultraviolet light is shined on the wafer through the mask. After processes such as development, etching and photoresist removal, the pattern on the mask can be transferred to the wafer.

[0003] At present, photoresist is usually removed by using a mixture of sulfuric acid and hydrogen peroxide. The mixture of sulfuric acid and hydrogen peroxide will produce a heat reaction, causing the temperature of the cleaning liquid to rise; then, the high-temperature cleaning liquid is sprayed onto the photoresist surface of the wafer substrate, and the cleaning liquid will corrode and dissolve the photoresist. Finally, the wafer is rinsed with deionized water to remove the cleaning liquid, thereby achieving the purpose of photoresist removal. Dangerous chemical reagents are used in the process of this photoresist removal method. Summary of the invention

[0004] The present application provides a photoresist removal method and system, which solves the problem that the photoresist removal method in the prior art uses hazardous chemical reagents. The present application can effectively remove the photoresist using conventional chemical reagents, thereby reducing the difficulty of wastewater treatment.

[0005] In a first aspect, the present application provides a method for removing photoresist, which may include: providing a first deionized solution having a target concentration of carbon dioxide; placing a wafer having a photoresist on a first surface in the first deionized solution and soaking it for a target time under first temperature and first pressure conditions; in response to the end of the target time, rinsing the wafer with a second deionized solution to obtain a target wafer with the photoresist removed.

[0006] Optionally, under the first temperature and first pressure conditions, before the wafer having the photoresist on the first surface is immersed in the deionized solution for a target time, the method further comprises: irradiating the first surface of the wafer with ultraviolet light.

[0007] Optionally, a first deionized solution having a target concentration of carbon dioxide is provided, comprising: introducing carbon dioxide gas into deionized water through a gas path for mixing to obtain mixed deionized water having a target concentration of carbon dioxide; heating and pressurizing the mixed deionized water to obtain the first deionized solution under second temperature and second pressure conditions.

[0008] Optionally, under the conditions of a first temperature and a first pressure, a wafer having a photoresist on its first surface is placed in the first deionized solution and immersed for a target time, including: placing the second surface of the wafer on a heating seat of an immersion device; wherein the second surface is arranged opposite to the first surface; when the immersion device is pressurized to a first pressure and the heating seat is heated to the first temperature, spraying the first deionized solution on the second surface of the wafer until the wafer is completely immersed in the first deionized solution; and immersing the wafer in the first deionized solution for a target time.

[0009] Optionally, the wavelength of the ultraviolet light is 175 to 250 nm; or / and, the target duration is 2 to 60 minutes.

[0010] Optionally, the target concentration includes 0.5% to 2%.

[0011] Optionally, the first temperature comprises 100° C. to 250° C. or / and the first pressure comprises 400 psi to 950 psi; or / and the second temperature comprises 100° C. to 250° C. or / and the second pressure comprises 400 psi to 950 psi.

[0012] In a second aspect, the present application provides a photoresist removal system, which may include: a solution generating device for providing a first deionized solution having a target concentration of carbon dioxide; an immersion device connected to the solution generating device, for placing a wafer having a photoresist on a first surface in the first deionized solution and immersing it for a target time under first temperature and first pressure conditions; and for rinsing the wafer with a second deionized solution in response to the end of the target time to obtain a target wafer with the photoresist removed.

[0013] Optionally, the solution generating equipment includes: a mixing device for mixing carbon dioxide gas and deionized water to generate mixed deionized water with a target concentration of carbon dioxide; and a pressurized heating device for pressurizing and heating the mixed deionized water output by the mixing device to generate the first deionized solution under second temperature and second pressure conditions.

[0014] Optionally, the immersion equipment includes: a pressurizing device, used to pressurize the atmospheric pressure in the immersion equipment to a first pressure value; a heating seat, used to support the wafer and heat the wafer to a first temperature; a solution nozzle arranged on the heating seat, interconnected with the pressurized heating device, and used to spray the first deionized solution output by the pressurized heating device onto the second surface of the wafer.

[0015] The technical solution provided by this application has at least the following beneficial effects:

[0016] By placing a wafer with a photoresist on a first surface in a first deionized solution containing a target concentration of carbon dioxide and immersing it for a target time under a first temperature and a first pressure condition, the carbon dioxide can penetrate into the photoresist to cause it to expand, and the expanded photoresist will produce film stress, causing the photoresist to rupture; finally, the reagents and impurities attached to the surface of the wafer are removed by a second deionized solution, thereby achieving removal of the photoresist; in this removal method, the first deionized solution containing the target concentration of carbon dioxide and the second deionized solution used for cleaning are both conventional chemical reagents, which reduce the difficulty of treating wastewater compared to the hazardous chemical reagents used in the prior art; in addition, under the first temperature and the first pressure condition, the penetration rate of carbon dioxide can also be accelerated, thereby improving the removal efficiency of the photoresist. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0018] Figure 1 Shown is a schematic flow chart of a photoresist removal method provided in an embodiment of the present application.

[0019] Figure 2 Shown is a structural schematic diagram of a photoresist removal system provided in an embodiment of the present application.

[0020] Figure 3 Shown is a schematic flow chart of another photoresist removal method provided in an embodiment of the present application.

[0021] Figure 4 Shown Figure 1 Schematic diagram of the process of step S102.

[0022] Description of reference numerals:

[0023] 10. Solution generating device; 11. Mixing device; 12. Pressurizing and heating device;

[0024] 20. Soaking equipment; 21. Pressurizing device; 22. Heating seat; 23. Solution nozzle; 24. Ultraviolet lamp;

[0025] 30. Solution recovery device;

[0026] 100. Wafer. DETAILED DESCRIPTION

[0027] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of the example embodiments to those skilled in the art.

[0028] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0029] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0030] In a first aspect, the present application provides a photoresist removal method, which specifically includes the following embodiments:

[0031] Embodiment 1

[0032] Figure 1 FIG. 1 is a schematic diagram of a process for removing photoresist provided in an embodiment of the present application; Figure 1 As shown, the removal method specifically comprises the following steps:

[0033] Step S101, providing a first deionized solution having a target concentration of carbon dioxide;

[0034] In this embodiment, providing a first deionized solution with a target concentration of carbon dioxide specifically includes the following steps: introducing carbon dioxide gas into deionized water through a gas path for mixing to obtain mixed deionized water with a target concentration of carbon dioxide; heating and pressurizing the mixed deionized water to obtain the first deionized solution under second temperature and second pressure conditions.

[0035] It should be noted that the process of preparing the first deionized solution containing the target concentration of carbon dioxide is as follows: Figure 2 As shown:

[0036] First, the carbon dioxide gas in the carbon dioxide storage tank is input into the mixing device through the air path, and at the same time, the deionized water in the deionized water storage tank is input into the mixing device through the pipeline to be mixed with a certain proportion of carbon dioxide, so that the mixed deionized water in the mixing device has a target concentration of carbon dioxide; wherein, a water flow meter is arranged between the mixing device and the pipeline of the deionized water storage tank, and an air flow meter is arranged between the air path between the mixing device and the carbon dioxide storage tank. Under the joint monitoring of the water flow meter and the air flow meter, the concentration of carbon dioxide dissolved in the deionized water in the mixing device can be controlled. The specific control method can refer to the method in the prior art, which will not be repeated here.

[0037] In this embodiment, the concentration of carbon dioxide in the first deionized solution affects the dissolution rate of the photoresist, and the target concentration includes 0.5% to 2%, for example, 0.5%, 0.75%, 1%, 1.5% and 2%, etc. The specific value can be adjusted according to the thickness of the photoresist.

[0038] Then, the mixed deionized water with the target concentration of carbon dioxide in the mixing device is input into the pressurized heating device, and the mixed deionized water is pressurized and heated to make the mixed solution reach a high temperature and high pressure state of a second temperature and a second pressure; wherein the second temperature and the second pressure affect the dissolution rate of the photoresist by the first deionized solution, the second temperature includes 100°C to 250°C, and the second pressure includes 400psi to 950psi, for example, the second temperature is 100°C, 150°C, 175°C, 200°C and 250°C, and the second pressure is 400psi, 500psi, 600psi, 650psi, 700psi, 850psi and 900psi, etc., and the specific values ​​of temperature and pressure are adjusted according to the thickness of the photoresist.

[0039] Step S102, placing the wafer having the photoresist on the first surface in the first deionized solution and soaking it for a target time under the conditions of a first temperature and a first pressure;

[0040] It should be noted that the value range of the first temperature and the second temperature in this embodiment is the same, that is, the value range of the first temperature is 100℃~250℃, for example, 100℃, 150℃, 175℃, 200℃ and 250℃; similarly, the value range of the first pressure and the second pressure in this embodiment is also the same, that is, the value range of the first pressure is 400psi~950psi, for example, 400psi, 500psi, 600psi, 650psi, 700psi, 850psi and 900psi, etc.

[0041] In this embodiment, the first temperature is preferably 200°C, and the first pressure is preferably 850psi (5861kpa), which form high temperature and high pressure conditions; the carbon dioxide in the deionized water under high temperature and high pressure conditions can penetrate into the photoresist, causing it to expand, and the expanded photoresist will produce film stress, resulting in photoresist rupture; in order to achieve the purpose of completely removing the photoresist, the wafer can be immersed in the solution for 2 to 60 minutes, for example, 2 minutes, 10 minutes, 15 minutes, 25 minutes, 30 minutes, 45 minutes and 60 minutes, etc.; wherein, the immersion time affects the residual problem of the photoresist, and can be adjusted in real time according to the thickness of the photoresist.

[0042] Step S103, in response to the target time duration ending, rinsing the wafer with a second deionized solution to obtain a target wafer with the photoresist removed;

[0043] It should be noted that after the wafer is immersed in the first deionized solution under high temperature and high pressure conditions for a period of time, the first deionized solution that has soaked the wafer is recovered or the wafer is separated from the first deionized solution and then the wafer is cleaned with a second deionized solution to remove the reagents and impurities attached to the surface of the wafer, thereby obtaining a target wafer with the photoresist completely removed; wherein the second deionized solution may be the same as or different from the first deionized solution, and the second deionized solution different from the first deionized solution may be ordinary deionized water with a cleaning effect, which reduces the cost compared to the second deionized solution.

[0044] The technical solution provided in this embodiment has at least the following beneficial effects:

[0045] By placing a wafer with a photoresist on a first surface in a first deionized solution containing a target concentration of carbon dioxide and immersing it for a target time under a first temperature and a first pressure condition, the carbon dioxide can penetrate into the photoresist to cause it to expand, and the expanded photoresist will produce film stress, causing the photoresist to crack; finally, the reagents and impurities attached to the surface of the wafer are removed by a second deionized solution, thereby achieving removal of the photoresist; in this removal method, the first deionized solution containing the target concentration of carbon dioxide and the second deionized solution used for cleaning can effectively remove the photoresist; further, under the first temperature and the first pressure condition, the penetration rate of carbon dioxide can be accelerated, thereby improving the removal efficiency of the photoresist.

[0046] Therefore, the photoresist removal method provided in this embodiment can effectively remove the photoresist using conventional chemical reagents.

[0047] Embodiment 2

[0048] Figure 3FIG. 1 is a schematic diagram of another photoresist removal method provided in an embodiment of the present application; Figure 3 As shown, the removal method specifically comprises the following steps:

[0049] Step S201, providing a first deionized solution having a target concentration of carbon dioxide;

[0050] Step S202, irradiating the first surface of the wafer with ultraviolet light;

[0051] Step S203, placing the wafer having the photoresist on the first surface in the first deionized solution and soaking it for a target time under the conditions of a first temperature and a first pressure;

[0052] Step S204, in response to the target time period ending, the wafer is rinsed with a second deionized solution to obtain a target wafer with the photoresist removed.

[0053] The principles of steps S201, S203 and S204 in this embodiment are exactly the same as those of the corresponding steps S101, S102 and S103 in the above-mentioned embodiment 1, and are not described in detail here; the difference between this embodiment and embodiment 1 is that: under the first temperature and the first pressure conditions, before the wafer with the photoresist on the first surface is placed in the deionized solution for a target time, ultraviolet light is also required to irradiate the first surface of the wafer (i.e., step S202), and step S202 is described in detail below:

[0054] In the manufacturing process of semiconductor devices, there is an ion implantation process, that is, after coating a patterned photoresist on the first surface of the wafer, ions are implanted into the first surface of the wafer. The ions are also implanted into the outer surface of the photoresist at the same time, causing the surface of the photoresist to cross-link and form a carbonized top layer. The carbonized top layer increases the difficulty of removing the photoresist.

[0055] It should be noted that during the ion implantation process, carbonization will only be formed on the top wall and side wall of the photoresist, and amorphous carbon will not be formed in the middle layer of the photoresist.

[0056] In order to quickly and effectively remove the carbonized photoresist on the top layer, this embodiment uses ultraviolet light to irradiate the carbonized photoresist top layer, and its carbonized shell will be cracked, so that the subsequent carbonized photoresist containing a specific concentration of CO 2 High temperature and high pressure water is more efficient in dissolving photoresist.

[0057] In this embodiment, the wavelength of the ultraviolet light is preferably 175-250 nm, for example, 175 nm, 200 nm, 250 nm, and the ultraviolet light power density is 200 mW / cm 2 The radiation dose is 10~30J / cm 2, for example 10J / cm 2 , 20J / cm 2 , 25J / cm 2 and 30J / cm 2 Among them, the irradiation time of ultraviolet light is negatively correlated with the radiation dose of ultraviolet light, that is, the higher the radiation dose, the shorter the irradiation time, and the lower the radiation dose, the longer the irradiation time. It can be adjusted according to actual irradiation conditions.

[0058] Embodiment 3

[0059] Figure 4 Shown Figure 1 Schematic diagram of the process of step S102; Figure 4 As shown, under the conditions of a first temperature and a first pressure, placing a wafer having a photoresist on a first surface in the first deionized solution and soaking it for a target time specifically includes the following steps:

[0060] Step S1021, placing the second surface of the wafer on a heating base of an immersion device.

[0061] Wherein, the second surface is arranged opposite to the first surface;

[0062] Step S1022, when the immersion device is pressurized to the first pressure and the heating seat is heated to the first temperature, spraying the first deionized solution on the second surface of the wafer until the wafer is completely immersed in the first deionized solution.

[0063] Step S1023, soaking the wafer in the first deionized solution for a target time.

[0064] The structural schematic diagram of the soaking device in this embodiment is as follows Figure 2 As shown, the immersion device 20 includes: a booster device 21 for boosting the atmospheric pressure in the immersion device to a first pressure value, a heating seat 22 for supporting the wafer and heating the wafer to a first temperature, and a solution nozzle 23 arranged on the heating seat; wherein the solution nozzle 23 is interconnected with the pressurized heating device 12, and is used to spray the first deionized solution output by the pressurized heating device 12 onto the second surface of the wafer.

[0065] It should be noted that the wafer in the present application has a first surface and a second surface arranged relatively to each other, wherein the first surface is coated with a certain thickness of patterned photoresist and has a polysilicon gate structure, etc.; the second surface of the wafer from which the photoresist is to be removed is placed on a heating seat of an immersion device, which has temperature monitoring and control functions and can heat the surface temperature of the wafer to a preset first temperature condition; at the same time, the booster device in the immersion device is also adjusting the atmospheric pressure in the chamber until the first pressure condition is reached.

[0066] When the atmospheric pressure in the immersion device is equal to the atmospheric pressure of the pressurized heating device, and the temperature of the wafer surface is also equal to the temperature of the pressurized heating device, the first deionized solution in the pressurized heating device is sprayed onto the second surface of the wafer through the solution nozzle until the wafer is completely immersed in the solution and the spraying is stopped; wherein, the spraying flow rate of the first deionized solution is controlled by the solution nozzle, so as to reduce the influence of the solution on the wafer pattern; further, the spraying of the solution is controlled only when the atmospheric pressure in the immersion device and the temperature of the wafer surface are the same as the temperature and pressure conditions of the pressurized heating device, so that the carbon dioxide in the solution can quickly penetrate into the photoresist, thereby increasing the expansion rate of the photoresist and achieving the purpose of improving the photoresist removal efficiency.

[0067] Finally, the wafer is immersed in the first deionized solution for a target time, so that the carbon dioxide in the solution can fully penetrate into the photoresist, thereby improving the removal effect of the photoresist; wherein, the target time includes 2 to 60 minutes, for example, 2 minutes, 10 minutes, 15 minutes, 25 minutes, 30 minutes, 45 minutes and 60 minutes, etc., preferably set to 30 minutes, and the specific immersion time is adjusted in real time according to the thickness of the photoresist.

[0068] In a second aspect, the present application provides a photoresist removal system, which specifically includes the following embodiments:

[0069] Embodiment 4

[0070] Figure 2 FIG. 1 is a schematic diagram of the structure of a photoresist removal system provided in an embodiment of the present application; Figure 2 As shown, the removal system comprises:

[0071] The solution generating device 10 is used to provide a first deionized solution having a target concentration of carbon dioxide;

[0072] The immersion device 20 is connected to the solution generating device 10, and is used to immerse the wafer 100 having a photoresist on the first surface in the first deionized solution for a target time under the conditions of a first temperature and a first pressure; and is also used to rinse the wafer 100 with a second deionized solution in response to the end of the target time to obtain a target wafer with the photoresist removed.

[0073] Optionally, the solution generating device 10 comprises:

[0074] A mixing device 11, for mixing carbon dioxide gas and deionized water to generate mixed deionized water with a target concentration of carbon dioxide;

[0075] The pressurizing and heating device 12 is used to pressurize and heat the mixed deionized water output by the mixing device 11 to generate the first deionized solution under the second temperature and second pressure conditions.

[0076] Optionally, the soaking device 20 comprises:

[0077] A pressurizing device 21, used to pressurize the atmospheric pressure in the soaking device to a first pressure value;

[0078] A heating seat 22, used for carrying the wafer 100 and heating the wafer 100 to a first temperature;

[0079] The solution nozzle 23 disposed on the heating seat 22 is interconnected with the pressurized heating device 12 and is used to spray the first deionized solution output by the pressurized heating device 12 onto the second surface of the wafer 100 .

[0080] In one embodiment of the present application, the immersion device 20 further includes: an ultraviolet lamp 24 disposed above the heating seat 22 for irradiating the first surface of the wafer 100 placed on the heating seat 22 with ultraviolet light.

[0081] In another embodiment of the present application, the immersion equipment 20 also includes: a cleaning nozzle (not shown in the figure) arranged above the heating seat 22, for rinsing the wafer 100 placed on the heating seat 22; wherein, in the process of rinsing the wafer, the heating seat has a lifting function, and after the wafer is lifted to be completely separated from the first deionized solution, the cleaning nozzle is used to rinse the wafer to remove the residue on the outer surface of the wafer and the first deionized solution, and the cleaning solution sprayed from the cleaning nozzle is the second deionized solution, that is, deionized water.

[0082] In another embodiment of the present application, the removal system also includes a solution recovery device 30, which is interconnected with the heating seat 22, and is used to recover the solution in the heating seat 22 after the wafer is immersed in the first deionized solution for a target period of time, or after the wafer is rinsed; wherein the solution recovery device 30 can recover by suction, or by opening the gate of the heating seat 22 to release the solution.

[0083] The technical solution provided in this embodiment has at least the following beneficial effects:

[0084] 1. A first deionized solution with a target concentration of carbon dioxide can be obtained through a solution generating device; in an immersion device under a first temperature and a first pressure condition, a wafer with a photoresist on a first surface is placed in a first deionized solution containing a target concentration of carbon dioxide and immersed for a target time. Under the temperature and pressure conditions, carbon dioxide can penetrate into the photoresist to cause it to expand, and the expanded photoresist will produce film stress, causing the photoresist to rupture; finally, the reagents and impurities attached to the surface of the wafer are removed through a second deionized solution, thereby achieving the removal of the photoresist; in the removal method, the first deionized solution containing the target concentration of carbon dioxide and the second deionized solution used for cleaning are both conventional chemical reagents, which reduce the difficulty of treating wastewater compared to the hazardous chemical reagents used in the prior art; further, under the first temperature and the first pressure conditions, the penetration rate of carbon dioxide can be accelerated, thereby improving the removal efficiency of the photoresist.

[0085] 2. The carbonized photoresist top layer is irradiated by the ultraviolet lamp in the immersion device, and its carbonized shell will be cracked, so that the subsequent 2 The high temperature and high pressure water dissolving photoresist is more efficient.

[0086] In addition, the terms "first", "second", "third", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", "third" may explicitly or implicitly include one or more of the feature. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0087] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0088] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. A photoresist removal method, characterized in that: The removal method may include: Providing a first deionized solution having a target concentration of carbon dioxide; Under the conditions of a first temperature and a first pressure, placing the wafer having the photoresist on the first surface in the first deionized solution and soaking it for a target time; In response to the target time period ending, the wafer is rinsed with a second deionized solution to obtain a target wafer with the photoresist removed.

2. The photoresist removal method according to claim 1, characterized in that: Under the first temperature and first pressure conditions, before the wafer having the photoresist on the first surface is immersed in the deionized solution for a target time, the method further comprises: The first surface of the wafer is irradiated with ultraviolet light.

3. The photoresist removal method according to claim 1, characterized in that: Providing a first deionized solution having a target concentration of carbon dioxide, comprising: Introducing carbon dioxide gas into deionized water through a gas path for mixing, thereby obtaining mixed deionized water with a target concentration of carbon dioxide; The mixed deionized water is heated and pressurized to obtain the first deionized solution under the conditions of a second temperature and a second pressure.

4. The photoresist removal method according to claim 1, characterized in that: Under the conditions of a first temperature and a first pressure, placing a wafer having a photoresist on a first surface in the first deionized solution and soaking it for a target time comprises: Placing the second surface of the wafer on a heating seat of an immersion device; wherein the second surface is arranged opposite to the first surface; When the immersion device is pressurized to the first pressure and the heating seat is heated to the first temperature, spraying the first deionized solution on the second surface of the wafer until the wafer is completely immersed in the first deionized solution; The wafer is immersed in the first deionized solution for a target time.

5. The photoresist removal method according to claim 2, characterized in that: The wavelength of the ultraviolet light includes 175 to 250 nm; Or / and, the target duration includes 2 to 60 minutes.

6. The photoresist removal method according to any one of claims 1 to 5, characterized in that: The target concentration includes 0.5% to 2%.

7. The photoresist removal method according to claim 3, characterized in that: The first temperature comprises 100° C. to 250° C. or / and the first pressure comprises 400 psi to 950 psi; or / and, The second temperature includes 100° C. to 250° C. or / and the second pressure includes 400 psi to 950 psi.

8. A photoresist removal system, characterized in that: The removal system may include: A solution generating device for providing a first deionized solution having a target concentration of carbon dioxide; An immersion device is connected to the solution generating device, and is used to place a wafer having a photoresist on a first surface in the first deionized solution for a target period of time under first temperature and first pressure conditions; and is also used to rinse the wafer with a second deionized solution in response to the end of the target period of time to obtain a target wafer with the photoresist removed.

9. The photoresist removal system according to claim 8, characterized in that: The solution generating device comprises: A mixing device, used for mixing carbon dioxide gas and deionized water to generate mixed deionized water with a target concentration of carbon dioxide; The pressurized heating device is used to pressurize and heat the mixed deionized water output by the mixing device to generate the first deionized solution under the second temperature and second pressure conditions.

10. The photoresist removal system according to claim 9, characterized in that: The soaking device comprises: A pressurizing device, used to pressurize the atmospheric pressure in the soaking device to a first pressure value; A heating seat, used for carrying the wafer and heating the wafer to a first temperature; The solution nozzle disposed on the heating seat is interconnected with the pressurized heating device and is used to spray the first deionized solution output by the pressurized heating device onto the second surface of the wafer.

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