A desmearing composite liquid and desmearing process

Abstract

This application relates to the technical field of chemical etching, specifically disclosing a photoresist removal composite solution and a photoresist removal process. The photoresist removal composite solution, by weight, comprises the following raw materials: 5-10 parts potassium hydroxide, 2-4 parts tetrabutylammonium hydroxide, 30-40 parts dimethyl sulfoxide, 15-25 parts pentaerythritol, 12-18 parts monoethanolamine, and 8-12 parts maltose. The photoresist removal composite solution prepared in this application exhibits good stripping efficiency, with each component effectively stripping the photoresist, and low corrosivity to the substrate, demonstrating more stable etching resistance and stripping ability.

Description

Technical Field

[0001] This application relates to the technical field of chemical etching, and more specifically, to a descaling composite solution and a descaling process. Background Technology

[0002] Semiconductor fabrication processes include grinding, etching, polishing, photolithography, and cleaning. In the photolithography process, a layer of photoresist is coated on the substrate. After exposure to ultraviolet light, the chemical properties of the photoresist change, allowing the circuit pattern to be transferred from the photomask to the photoresist. Then, through the etching process, the circuit pattern is transferred from the photoresist to the substrate. After the pattern transfer is completed, the photoresist and any residue remaining on the substrate need to be cleaned to prepare for the next step.

[0003] Existing photoresist stripping solutions use alkaline cleaning agents composed of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), ethylene glycol (EG), and water to clean photoresist. These cleaning agents are essentially non-corrosive to metals. However, their cleaning ability is weak, and the cleaning time is long. Summary of the Invention

[0004] To address the issues of weak cleaning ability and long cleaning time in degumming composite solutions, this application provides a degumming composite solution and a degumming process.

[0005] In a first aspect, this application provides a composite liquid for removing adhesive residue, which adopts the following technical solution:

[0006] A composite liquid for removing adhesive residue, by weight, comprises the following raw materials: 5-10 parts potassium hydroxide, 2-4 parts tetrabutylammonium hydroxide, 30-40 parts dimethyl sulfoxide, 15-25 parts pentaerythritol, 12-18 parts monoethanolamine and 8-12 parts maltose.

[0007] By adopting the above technical solution, potassium hydroxide can react chemically with photoresist, causing the photoresist to expand and decompose, thereby achieving the dissolution and removal of the photoresist; tetrabutylammonium hydroxide, as an organic alkaline component, reacts chemically with the polymer in the photoresist, causing the photoresist to expand and decompose, thereby achieving the effective dissolution and removal of the photoresist.

[0008] Dimethyl sulfoxide (DMSO) can effectively penetrate and dissolve photoresist, promoting its peeling from the substrate surface. DMSO has good thermal stability, which allows it to remain stable during the peeling process. It is also easy to clean and will not leave any residue on the substrate.

[0009] Pentaerythritol has good solubility and chemical stability, which can dissolve the polymer components in photoresist, thereby promoting the dissolution and stripping of photoresist. It also has certain surface activity, which reduces the surface tension of the photoresist removal composite liquid, helps the photoresist removal composite liquid to better penetrate to the interface between photoresist and substrate, and improves stripping efficiency.

[0010] Monoethanolamine, as a co-solvent, can increase the solubility of photoresist in solvent systems and improve the dissolution rate, thereby enhancing the efficiency of the photoresist removal composite solution. It can also adjust the alkaline environment of the photoresist removal composite solution, making the photoresist removal composite solution less corrosive to the substrate and providing more stable corrosion resistance and peeling ability.

[0011] During the photoresist stripping process, maltose acts as an auxiliary stripping agent, adjusting the alkaline environment of the system. It works synergistically with monoethanolamine in the photoresist stripping solution to reduce the alkalinity of the solution, thereby reducing its corrosion of the substrate. Furthermore, it enhances the photoresist's dissolving power, allowing the solution to penetrate more effectively to the photoresist-substrate interface, promoting photoresist stripping and improving stripping efficiency. The various components work together to improve the stripping efficiency of the photoresist stripping solution while minimizing its corrosiveness to the substrate.

[0012] Optionally, the mass ratio of potassium hydroxide, dimethyl sulfoxide, and pentaerythritol is 1:5-7:2-4.

[0013] By adopting the above technical solution, the mass ratio of potassium hydroxide, dimethyl sulfoxide, and pentaerythritol is further limited to a certain range. The combination of potassium hydroxide, dimethyl sulfoxide, and pentaerythritol has a synergistic effect, jointly improving the removal efficiency of the photoresist slag composite solution. Potassium hydroxide can react chemically with photoresist, causing the photoresist to expand and decompose. Dimethyl sulfoxide can effectively penetrate and dissolve the photoresist, allowing potassium hydroxide to fully contact the photoresist, increasing the contact area between potassium hydroxide and photoresist, and effectively dissolving and removing the photoresist. Pentaerythritol reduces the surface tension of the photoresist slag composite solution, helping potassium hydroxide and dimethyl sulfoxide to better penetrate to the interface between the photoresist and the substrate, thus improving the stripping efficiency.

[0014] Optionally, the mass ratio of the tetrabutylammonium hydroxide, monoethanolamine, and maltose is 1:6-8:2.5-3.5.

[0015] By adopting the above technical solution, the mass ratio of tetrabutylammonium hydroxide, maltose, and monoethanolamine is further limited within a certain range. The combination of tetrabutylammonium hydroxide, maltose, and monoethanolamine has a synergistic effect, jointly improving the photoresist removal efficiency of the photoresist removal slag composite solution. Tetrabutylammonium hydroxide reacts chemically with the polymer in the photoresist, causing the photoresist to expand and decompose. Monoethanolamine regulates the alkaline environment of the photoresist removal slag composite solution, reducing the corrosiveness of the photoresist removal slag composite solution to the substrate. It works synergistically with monoethanolamine to reduce the corrosion of the photoresist removal slag composite solution to the substrate, so that tetrabutylammonium hydroxide can effectively dissolve and remove the photoresist. The combination of tetrabutylammonium hydroxide, maltose, and monoethanolamine improves the photoresist removal efficiency while reducing the corrosion of the substrate by the alkaline solution.

[0016] Optionally, the method for preparing maltose includes the following steps: dispersing maltose in deionized water, stirring at 80-85℃ for 20-30 minutes, adding sodium dodecylbenzenesulfonate, continuing to stir, and drying to obtain a mixture;

[0017] The mixture was dispersed in deionized water and stirred at 25-30℃ for 1-2 hours. EDTA and xylitol were added and stirred until homogeneous. The mixture was kept at 65-70℃ for 2-3 hours, dried, washed, and ground to obtain maltose.

[0018] By adopting the above technical solution, sodium dodecylbenzenesulfonate, a commonly used anionic surfactant, possesses excellent detergency, wetting, and dispersing properties. When sodium dodecylbenzenesulfonate is mixed with maltose, the surface activity of maltose synergistically reduces surface tension, enhances the wetting and penetration capabilities of the mixture, and facilitates subsequent formulation with other components, reducing the peel force between the photoresist and the substrate. Furthermore, the combination of maltose and sodium dodecylbenzenesulfonate exhibits a synergistic cleaning effect, improving the removal of stains and aiding in the removal of organic contaminants from the photoresist.

[0019] Ethylenediaminetetraacetic acid (EDTA) can bind with metal ions to form stable chelates, thus preventing metal ions from interfering with the stripping process. Simultaneously, the chelating effect of EDTA protects sodium dodecylbenzenesulfonate from the inhibition of metal ions, ensuring its cleaning performance. Xylitol has swelling and dissolving properties; in subsequent photoresist processing, it helps the photoresist swell, making its structure looser and thus easier to dissolve and remove by other components in the photoresist removal solution.

[0020] Optionally, the mass ratio of maltose, sodium dodecylbenzenesulfonate, ethylenediaminetetraacetic acid, and xylitol is 1:2-4:5-8:1.5-3.5.

[0021] By adopting the above technical solution, the mass ratio of maltose, sodium dodecylbenzenesulfonate, ethylenediaminetetraacetic acid (EDTA), and xylitol is further limited within a certain range, improving the physical properties of maltose. This allows maltose to work more effectively with the other components in the photoresist removal composite solution, dissolving and stripping the photoresist more efficiently. The combination of maltose and sodium dodecylbenzenesulfonate enhances the wetting and penetration capabilities of the mixture. The chelating effect of EDTA protects sodium dodecylbenzenesulfonate from inhibition by metal ions. Xylitol has swelling and dissolving properties. The combination of these components results in a better dissolving and removal effect on the photoresist.

[0022] Secondly, this application provides a process for preparing a degumming slag composite liquid, comprising the following steps: mixing potassium hydroxide, tetrabutylammonium hydroxide, dimethyl sulfoxide, pentaerythritol, monoethanolamine and maltose, and then dispersing them in deionized water to obtain a degumming slag composite liquid.

[0023] By adopting the above technical solution, the preparation method of the photoresist removal composite solution is simple to operate and convenient to use, and the components are mixed evenly, which helps to improve the efficiency of photoresist removal in the subsequent process.

[0024] Thirdly, this application provides a process for removing adhesive residue, comprising the following steps:

[0025] (1) Place one side of the substrate containing photoresist under ultraviolet light for treatment to obtain the treated substrate;

[0026] (2) Place the substrate that has undergone aging treatment obtained in step (1) into the above-mentioned desmearing composite liquid for ultrasonic cleaning, then wash with deionized water, and blow dry with high-purity nitrogen.

[0027] By adopting the above technical solution, the photoresist is first treated. Ultraviolet light can induce the chemical bonds within the photoresist molecules to break, promoting the decomposition of the photoresist and making it easier to remove. Then, it is placed in a desmearing composite solution and ultrasonically cleaned to remove the photoresist from the substrate, ensuring the complete removal of the photoresist and improving the photoresist stripping efficiency.

[0028] Optionally, in step (2), the ultraviolet light is provided by an ultraviolet lamp with a power of 200-300mW and a processing time of 50-60s.

[0029] By employing the above-mentioned technical solution, using a 200-300mW ultraviolet lamp to remove photoresist is a specific photoresist removal technique called photoresist stripping. This technique utilizes the energy of ultraviolet light to decompose or alter the chemical structure of the photoresist, making it easier to remove. When the power of the ultraviolet lamp is between 200-300mW, it can provide sufficient energy density to accelerate the decomposition process of the photoresist, thereby promoting its removal.

[0030] Optionally, in step (2), the cleaning temperature is 70-75℃ and the cleaning time is 1-3h.

[0031] By adopting the above technical solution and controlling the temperature and cleaning time of ultrasonic cleaning, the photoresist can be effectively removed. During the photoresist removal process, ultrasonic cleaning can effectively break the adhesion between the photoresist and the substrate by utilizing the mechanical and cavitation effects of ultrasonic waves, thereby improving the photoresist removal efficiency. Ultrasonic cleaning can not only improve the photoresist removal efficiency, but also reduce the damage to the substrate material during the cleaning process, thus ensuring the high-quality production of devices.

[0032] Optionally, in step (2), the temperature of the deionized water washing is 30-35℃, and the washing time is 15-20 min.

[0033] By adopting the above technical solution and limiting the appropriate deionized water washing temperature and time, photoresist residue can be effectively removed, ensuring the quality of the substrate.

[0034] In summary, this application has the following beneficial effects:

[0035] 1. The components in this application work together to improve the stripping efficiency of the photoresist residue removal composite liquid, and have low corrosiveness to the substrate. Tetrabutylammonium hydroxide, as an organic alkaline component, reacts chemically with the polymer in the photoresist, causing the photoresist to expand and decompose, thereby achieving effective dissolution and removal of the photoresist. Dimethyl sulfoxide can effectively penetrate and dissolve the photoresist, promoting its stripping from the substrate surface. Dimethyl sulfoxide has good thermal stability, which allows it to remain stable during the stripping process, while being easy to clean and leaving no residue on the substrate.

[0036] 2. In this application, potassium hydroxide can react chemically with photoresist, causing the photoresist to expand and decompose, thereby achieving the dissolution and removal of the photoresist; maltose, as an auxiliary stripping agent, adjusts the alkaline environment of the system and works synergistically with monoethanolamine in the photoresist removal composite solution to reduce the alkalinity of the photoresist removal composite solution, reduce the corrosion of the photoresist removal composite solution on the substrate, and enhance the dissolution capacity of the photoresist, so that the photoresist removal composite solution can penetrate more effectively to the interface between the photoresist and the substrate, promote the stripping of the photoresist, and improve the stripping efficiency of the photoresist.

[0037] 3. In this application, pentaerythritol has good solubility and chemical stability, which can dissolve the polymer components in the photoresist, thereby promoting the dissolution and stripping of the photoresist. It also has a certain surface activity, which reduces the surface tension of the photoresist removal composite liquid, helps the photoresist removal composite liquid to better penetrate into the interface between the photoresist and the substrate, and improves the stripping efficiency. Detailed Implementation

[0038] Example of maltose preparation

[0039] Preparation Example 1-1

[0040] The method for preparing maltose includes the following steps: dispersing 30g of maltose in 50mL of deionized water, stirring at 85℃ for 25min, adding sodium dodecylbenzenesulfonate, continuing to stir for 1h, drying, and obtaining a mixture;

[0041] The mixture was dispersed in 100 mL of deionized water and stirred at 30 °C for 2 h. EDTA and xylitol were added and stirred until homogeneous. The mixture was kept at 70 °C for 3 h, dried, washed, and ground to obtain maltose.

[0042] The mass ratio of maltose, sodium dodecylbenzenesulfonate, ethylenediaminetetraacetic acid, and xylitol is 1:2:5:3.5.

[0043] Preparation Examples 1-2

[0044] The difference from Preparation Example 1-1 is that sodium dodecylbenzenesulfonate is not added.

[0045] Preparation Examples 1-3

[0046] The difference from Preparation Example 1-1 is that ethylenediaminetetraacetic acid is not added.

[0047] Preparation Examples 1-4

[0048] The difference from Preparation Example 1-1 is that xylitol is not added.

[0049] Preparation Examples 1-5

[0050] The difference from Preparation Example 1-1 is that the mass ratio of maltose, sodium dodecylbenzenesulfonate, ethylenediaminetetraacetic acid, and xylitol is 1:4:8:1.5.

[0051] Preparation Examples 1-6

[0052] The difference from Preparation Example 1-1 is that the mass ratio of maltose, sodium dodecylbenzenesulfonate, ethylenediaminetetraacetic acid, and xylitol is 1:8:2:4.

[0053] Example

[0054] Example 1

[0055] A composite liquid for removing adhesive residue, by weight, comprises the following raw materials: 5g potassium hydroxide, 4g tetrabutylammonium hydroxide, 40g dimethyl sulfoxide, 15g pentaerythritol, 12g monoethanolamine and 8g maltose.

[0056] Maltose was purchased from Wuhan Jinyixiang Fine Chemical Co., Ltd.

[0057] A method for preparing a degumming sludge composite liquid includes the following steps: mixing potassium hydroxide, tetrabutylammonium hydroxide, dimethyl sulfoxide, pentaerythritol, monoethanolamine and maltose, and then dispersing them in 180g of deionized water to obtain the degumming sludge composite liquid.

[0058] Example 2

[0059] A composite liquid for removing adhesive residue, which differs from Example 1 in that, by weight, it comprises the following raw materials: 10g potassium hydroxide, 2g tetrabutylammonium hydroxide, 30g dimethyl sulfoxide, 25g pentaerythritol, 18g monoethanolamine and 12g maltose.

[0060] Example 3

[0061] A degumming compound liquid, which differs from Example 1 in that the maltose is prepared in Preparation Example 1-1.

[0062] Example 4

[0063] A degumming compound liquid differs from Example 3 in that the maltose is prepared from Preparation Examples 1-2.

[0064] Example 5

[0065] A degumming compound liquid differs from Example 3 in that the maltose is prepared from Preparation Examples 1-3.

[0066] Example 6

[0067] A degumming compound liquid differs from Example 3 in that the maltose is prepared from Preparation Examples 1-4.

[0068] Example 7

[0069] A degumming compound liquid differs from Example 3 in that the maltose is prepared from Preparation Examples 1-5.

[0070] Example 8

[0071] A degumming compound liquid differs from Example 3 in that the maltose is prepared from Preparation Examples 1-6.

[0072] Example 9

[0073] A composite liquid for removing adhesive residue differs from Example 3 in that the mass ratio of potassium hydroxide, dimethyl sulfoxide, and pentaerythritol is 1:5:2.

[0074] Example 10

[0075] A composite liquid for removing adhesive residue differs from Example 3 in that the mass ratio of potassium hydroxide, dimethyl sulfoxide, and pentaerythritol is 1:7:4.

[0076] Example 11

[0077] A composite liquid for removing adhesive residue differs from that in Example 3 in that the mass ratio of tetrabutylammonium hydroxide, monoethanolamine, and maltose is 1:8:2.5.

[0078] Example 12

[0079] A composite liquid for removing adhesive residue differs from that in Example 3 in that the mass ratio of tetrabutylammonium hydroxide, monoethanolamine, and maltose is 1:6:3.5.

[0080] Comparative Example

[0081] Comparative Example 1

[0082] A composite liquid for removing adhesive residue, which differs from Example 3 in that potassium hydroxide is not added.

[0083] Comparative Example 2

[0084] A composite liquid for removing adhesive residue, which differs from Example 3 in that it does not contain dimethyl sulfoxide.

[0085] Comparative Example 3

[0086] A composite liquid for removing adhesive residue, which differs from Example 3 in that it does not contain pentaerythritol.

[0087] Comparative Example 4

[0088] A composite liquid for removing adhesive residue, which differs from Example 3 in that it does not contain tetrabutylammonium hydroxide.

[0089] Comparative Example 5

[0090] A composite liquid for removing adhesive residue, which differs from Example 3 in that it does not contain monoethanolamine.

[0091] Comparative Example 6

[0092] A composite liquid for removing adhesive residue, which differs from Example 3 in that it does not contain maltose.

[0093] Application examples

[0094] Application Example 1

[0095] A process for removing adhesive residue includes the following steps:

[0096] (1) Place one side of the substrate containing photoresist under ultraviolet light for treatment to obtain the treated substrate;

[0097] (2) Place the aged substrate obtained in step (1) into 100g of desmearing composite liquid for ultrasonic cleaning, then wash with deionized water and dry with high-purity nitrogen.

[0098] The substrate is a copper substrate with a size of 60*80mm. The ultraviolet light is provided by an ultraviolet lamp with a power of 200mW, and the processing time is 60s.

[0099] The cleaning temperature is 70℃, and the cleaning time is 1 hour.

[0100] The washing temperature of the deionized water is 30℃, and the washing time is 15 minutes.

[0101] The adhesive residue removal compound liquid uses the components of Example 1.

[0102] Application Example 2

[0103] One process for removing adhesive residue differs from Application Example 1 in that the power of the ultraviolet lamp is 300mW and the treatment time is 50s.

[0104] The cleaning temperature is 75℃, and the cleaning time is 3 hours.

[0105] The washing temperature of the deionized water is 35℃, and the washing time is 20 minutes.

[0106] The adhesive residue removal compound liquid uses the components of Example 2.

[0107] Application Example 3

[0108] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 3.

[0109] Application Example 4

[0110] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 4.

[0111] Application Example 5

[0112] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 5.

[0113] Application Example 6

[0114] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 6.

[0115] Application Example 7

[0116] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 7.

[0117] Application Example 8

[0118] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 8.

[0119] Application Example 9

[0120] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 9.

[0121] Application Example 10

[0122] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 10.

[0123] Application Example 11

[0124] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 11.

[0125] Application Example 12

[0126] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Example 12.

[0127] Application Comparative Example 1

[0128] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Comparative Example 1.

[0129] Application Comparative Example 2

[0130] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Comparative Example 2.

[0131] Application Comparative Example 3

[0132] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Comparative Example 3.

[0133] Application Comparative Example 4

[0134] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Comparative Example 4.

[0135] Application Comparative Example 5

[0136] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Comparative Example 5.

[0137] Application Comparative Example 6

[0138] A process for removing adhesive residue differs from Application Example 1 in that the adhesive residue removal composite liquid uses the components of Comparative Example 6.

[0139] Performance testing

[0140] The substrates treated with the desmearing process according to Application Examples 1-12 and Comparative Examples 1-6 were subjected to performance tests; the corrosion of the underlying wiring and the degree of cleanliness of the stripping were observed under a SEM microscope; the test results are shown in Table 1.

[0141] Table 1 Test data for application examples and comparative examples.

[0142]

[0143]

[0144] Table 2 Test Indicators

[0145] Corrosion status: ○ Non-corrosive Cleaning status: ○ Complete removal □ Slightly corroded □ Slight residue ☆ Minor corrosion ☆Small amount of residue △ Moderate corrosion △ Remaining

[0146] Based on the examples and the data in Table 1, it can be seen that the maltose used in Application Examples 1-2 is commercially available. In the desmearing process, the prepared desmearing composite solution in Application Examples 1-2 showed slight corrosion to the substrate, and the substrate cleaning results showed a small amount of residue. However, in Application Examples 3 and 7, compared to Application Example 1, maltose was replaced with the self-made maltose of this application. The test results showed no corrosion to the substrate, and the substrate cleaning results completely removed the residue. Therefore, the maltose prepared in this application has superior overall performance. It can work with monoethanolamine to reduce the alkalinity of the desmearing composite solution, reduce the corrosion of the substrate by the desmearing composite solution, and enhance the dissolving ability of the photoresist. This allows the desmearing composite solution to penetrate more effectively to the interface between the photoresist and the substrate, promoting photoresist stripping and improving photoresist stripping efficiency.

[0147] In Application Example 4, sodium dodecylbenzenesulfonate was not added during the preparation of maltose. As shown in Table 1, compared with Application Example 3, the test results showed a small amount of corrosion on the substrate and a small amount of residue in the substrate cleaning results. This indicates that when sodium dodecylbenzenesulfonate and maltose are mixed, the surface activity of maltose and sodium dodecylbenzenesulfonate work synergistically to further reduce surface tension, enhance the wetting and penetration ability of the mixture, and help to reduce the peel force between the photoresist and the substrate when combined with other components. Moreover, the two exhibit a synergistic cleaning effect, improve the ability to remove stains, and help remove organic stains in the photoresist.

[0148] In Application Example 5, during the preparation of maltose, ethylenediaminetetraacetic acid (EDTA) was not added. As shown in Table 1, compared to Application Example 3, the test results showed a small amount of corrosion on the substrate and a small amount of residue in the substrate cleaning results. This indicates that the chelating effect of EDTA can protect sodium dodecylbenzenesulfonate from the inhibition of metal ions, ensuring the cleaning performance of sodium dodecylbenzenesulfonate. It can also combine with metal ions to form stable chelates, thereby preventing the interference of metal ions on the stripping process.

[0149] In the preparation of maltose in Application Example 6, xylitol was not added. As shown in Table 1, compared with Application Example 3, the test results showed a small amount of corrosion on the substrate and a small amount of residue in the substrate cleaning results. This indicates that xylitol has swelling and dissolving effects. In the subsequent photoresist processing, it helps the photoresist to swell, making its structure looser, thus making it easier to be dissolved and removed by other components in the photoresist removal composite solution.

[0150] Application Example 8 changed the mass ratio of maltose, sodium dodecylbenzenesulfonate, ethylenediaminetetraacetic acid (EDTA), and xylitol. As shown in Table 1, compared with Application Example 3 and Application Example 7, the test results showed slight corrosion of the substrate and slight residue in the substrate cleaning results. This indicates that the combination of maltose and sodium dodecylbenzenesulfonate enhances the wetting and penetration ability of the mixture. The chelating effect of EDTA can protect sodium dodecylbenzenesulfonate from the inhibition of metal ions. Xylitol has swelling and dissolving effects. The combination of maltose, sodium dodecylbenzenesulfonate, EDTA, and xylitol has a better effect on dissolving and removing photoresist.

[0151] Application Examples 9-10 further defined the mass ratio of potassium hydroxide, dimethyl sulfoxide, and pentaerythritol. Compared to Application Examples 3 and 7, the test results showed no corrosion to the substrate, and the substrate cleaning completely removed the residue. Although the test results were the same, SEM observation showed that Application Examples 9-10 treated the substrate more cleanly and without corrosion, and the substrate was brighter. This indicates that the combination of potassium hydroxide, dimethyl sulfoxide, and pentaerythritol has a synergistic effect. Potassium hydroxide can react chemically with the photoresist, causing the photoresist to expand and decompose. Dimethyl sulfoxide can effectively penetrate and dissolve the photoresist, allowing potassium hydroxide to fully contact the photoresist, increasing the contact area between potassium hydroxide and photoresist, and effectively dissolving and removing the photoresist. Pentaerythritol reduces the surface tension of the descaling composite solution, helping potassium hydroxide and dimethyl sulfoxide to better penetrate to the interface between the photoresist and the substrate, improving the stripping efficiency.

[0152] Application Examples 11-12 further defined the mass ratio of tetrabutylammonium hydroxide, monoethanolamine, and maltose. Compared to Application Examples 3 and 7, the test results showed no corrosion to the substrate, and the substrate cleaning completely removed the residue. Although the test results were the same, SEM observation showed that Application Examples 11-12 treated the substrate more thoroughly and without corrosion, and the substrate was brighter. This indicates that the combination of tetrabutylammonium hydroxide, maltose, and monoethanolamine has a synergistic effect. Tetrabutylammonium hydroxide reacts chemically with the polymer in the photoresist, causing the photoresist to expand and decompose. Monoethanolamine adjusts the alkaline environment of the photoresist removal solution, reducing the corrosiveness of the photoresist removal solution to the substrate. It works synergistically with monoethanolamine to reduce the corrosion of the photoresist removal solution to the substrate, allowing tetrabutylammonium hydroxide to effectively dissolve and remove the photoresist. The combination of tetrabutylammonium hydroxide, maltose, and monoethanolamine improves the photoresist removal efficiency while reducing the corrosion of the substrate by the alkaline solution.

[0153] Compared to Application Example 3, the application of Comparative Example 1, which did not include potassium hydroxide in the desmearing composite solution, showed slight corrosion to the substrate and more residue after cleaning. This indicates that without potassium hydroxide, the corrosion of the substrate was significantly reduced, but the treatment results for the substrate were also worse. This is because potassium hydroxide can react chemically with the photoresist, causing it to expand and decompose, thereby dissolving and removing the photoresist.

[0154] In Comparative Example 2, no dimethyl sulfoxide was added to the desmearing composite solution. Compared with Application Example 3, the test results showed moderate corrosion of the substrate and a small amount of residue after cleaning. This indicates that potassium hydroxide has a greater corrosive effect on the substrate, while dimethyl sulfoxide can effectively penetrate and dissolve the photoresist, promoting its peeling from the substrate surface. Dimethyl sulfoxide has good thermal stability, which allows it to remain stable during the peeling process. At the same time, it is easy to clean and will not leave any residue on the substrate.

[0155] In Comparative Example 3, the resist removal composite solution without pentaerythritol showed moderate corrosion of the substrate compared to Example 3. The substrate cleaning results showed a small amount of residue, indicating that potassium hydroxide has a greater corrosive effect on the substrate. In contrast, pentaerythritol has good solubility and chemical stability, which can dissolve the polymer components in the photoresist, thereby promoting the dissolution and stripping of the photoresist. It also has certain surface activity, reducing the surface tension of the resist removal composite solution and helping it to better penetrate the interface between the photoresist and the substrate, thus improving the stripping efficiency.

[0156] Compared to Application Example 3, the application of Comparative Example 4, which did not include tetrabutylammonium hydroxide in the desmearing composite solution, showed a small amount of corrosion on the substrate and a small amount of residue in the substrate cleaning results. This indicates that tetrabutylammonium hydroxide, as an organic alkaline component, reacts chemically with the polymer in the photoresist, causing the photoresist to expand and decompose, thereby achieving effective dissolution and removal of the photoresist.

[0157] Compared to Application Example 3, the photoresist removal composite solution in Comparative Example 5, which did not contain monoethanolamine, showed moderate corrosion to the substrate and more residue after cleaning. This indicates that monoethanolamine, as a co-solvent, can increase the solubility of photoresist in the solvent system and improve the dissolution rate, thereby enhancing the efficiency of the photoresist removal composite solution. It can also adjust the alkaline environment of the photoresist removal composite solution, resulting in lower corrosion resistance to the substrate and providing more stable photoresist resistance and stripping ability.

[0158] Compared to Application Example 3, the photoresist removal composite solution in Comparative Example 6, which did not contain maltose, showed moderate corrosion of the substrate and more residue after cleaning, indicating that maltose, as an auxiliary stripping agent, adjusted the alkaline environment of the system and worked synergistically with monoethanolamine in the photoresist removal composite solution to reduce the alkalinity of the solution, thereby reducing its corrosion of the substrate. Furthermore, it enhanced the dissolving power of the photoresist, allowing the solution to penetrate more effectively to the photoresist-substrate interface, promoting photoresist stripping and improving stripping efficiency.

[0159] This specific embodiment is merely an explanation of this application and is not intended to limit it. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they fall within the scope of the claims of this application.

Claims

1. A composite liquid for removing adhesive residue, characterized in that, By weight, it includes the following raw materials: 5-10 parts potassium hydroxide, 2-4 parts tetrabutylammonium hydroxide, 30-40 parts dimethyl sulfoxide, 15-25 parts pentaerythritol, 12-18 parts monoethanolamine and 8-12 parts maltose.

2. The adhesive residue removal composite liquid according to claim 1, characterized in that, The mass ratio of potassium hydroxide, dimethyl sulfoxide, and pentaerythritol is 1:5-7:2-4.

3. The adhesive residue removal composite liquid according to claim 1, characterized in that, The mass ratio of the tetrabutylammonium hydroxide, monoethanolamine, and maltose is 1:6-8:2.5-3.

5.

4. The adhesive residue removal composite liquid according to claim 1, characterized in that, The method for preparing maltose includes the following steps: dispersing maltose in deionized water, stirring at 80-85℃ for 20-30 minutes, adding sodium dodecylbenzenesulfonate, continuing to stir, and drying to obtain a mixture; The mixture was dispersed in deionized water and stirred at 25-30℃ for 1-2 hours. EDTA and xylitol were added and stirred until homogeneous. The mixture was kept at 65-70℃ for 2-3 hours, dried, washed, and ground to obtain maltose.

5. The adhesive residue removal composite liquid according to claim 4, characterized in that, The mass ratio of maltose, sodium dodecylbenzenesulfonate, ethylenediaminetetraacetic acid, and xylitol is 1:2-4:5-8:1.5-3.

5.

6. A method for preparing a degumming slag composite liquid according to any one of claims 1-5, characterized in that, The process includes the following steps: mixing potassium hydroxide, tetrabutylammonium hydroxide, dimethyl sulfoxide, pentaerythritol, monoethanolamine and maltose, and then dispersing them in deionized water to obtain a degumming sludge composite solution.

7. A process for removing adhesive residue, comprising the following steps: (1) Place one side of the substrate containing photoresist under ultraviolet light to treat it, and obtain the treated substrate; (2) Place the substrate that has been aged in step (1) into the desizing composite liquid prepared in claim 6 for ultrasonic cleaning, then wash with deionized water and dry with high-purity nitrogen.

8. The process for removing adhesive residue according to claim 7, characterized in that, In step (2), the ultraviolet light is provided by an ultraviolet lamp with a power of 200-300mW and a processing time of 50-60s.

9. The process for removing adhesive residue according to claim 7, characterized in that, In step (2), the cleaning temperature is 70-75℃ and the cleaning time is 1-3h.

10. The process for removing adhesive residue according to claim 7, characterized in that, In step (2), the temperature of the deionized water washing is 30-35℃, and the washing time is 15-20min.

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