Gas distributor, plasma processing apparatus, and gas switching operation method

Abstract

This invention provides a gas distributor, a plasma processing device, and a gas switching operation method, belonging to the technical field of plasma processing equipment. To address equipment damage caused by pipeline discharge in the gas distributor, the invention specifically includes: a gas spray head; a radio frequency source electrically connected to the gas spray head; a remote plasma source whose plasma outlet is connected to the outlet of the gas spray head via a gas delivery pipe; and a movable plug. The movable plug moves within the gas delivery pipe to switch between different process processing states, thereby satisfying the plasma type requirements of different processes during plasma processing while preventing damage to the equipment from gas being excited into plasma within the gas delivery pipe.

Description

Technical Field

[0001] This invention relates to the field of plasma processing equipment technology, and more particularly to the field of a gas distributor, a plasma processing device, and a gas switching operation method. Background Technology

[0002] Microfabrication of semiconductor substrates is a well-known technique used to manufacture, for example, semiconductors, flat panel displays, light-emitting diodes (LEDs), and solar cells. A crucial step in microfabrication is the plasma processing step, which takes place inside a reaction chamber where process gases are introduced. An radio frequency (RF) source, coupled to the reaction chamber via inductance and / or capacitance, excites the process gases to form and maintain plasma. Inside the reaction chamber, the exposed substrate surface undergoes etching or deposition processes using the generated plasma, thereby forming the desired film or morphology on the substrate surface.

[0003] Plasma-based deposition or etching processes primarily include Plasma Enhanced Chemical Vapor Deposition (PECVD), Plasma Enhanced Atomic Layer Deposition (PEALD), and pre-cleaning for epitaxial deposition. These processes typically require the integration of a remote plasma source (RPS) and in-situ plasma onto the same semiconductor device to rapidly switch between RPS and in-situ plasma states according to different process steps.

[0004] In the prior art, in the RPS state, the pipe through which the remote plasma source inputs plasma into the reaction chamber needs to maintain the largest possible inner diameter to reduce the loss of plasma output from the remote plasma source in the pipe. However, in the in-situ plasma state, the gas in the pipe with an excessively large inner diameter is easily excited by the radio frequency source to form parasitic plasma, which damages the inner wall of the pipe, generates particulate contamination, increases the cost of manual maintenance, and may even affect the process results.

[0005] Therefore, a technical solution is urgently needed to resolve the conflicting requirements of the pipeline in both RPS and in-situ plasma states. Summary of the Invention

[0006] The technical problem solved by this invention is to provide a gas distributor, a plasma processing device, and a gas switching operation method to resolve the conflicting requirements of pipelines in RPS state and in-situ plasma state.

[0007] To address the aforementioned technical problems, the present invention provides a gas distributor for introducing reaction gas into a reaction chamber, comprising:

[0008] The gas spray head has multiple gas outlets on one side that communicate with the reaction chamber, and the other side is connected to a gas source.

[0009] A remote plasma source, the plasma outlet of which is connected to the outlet of the gas spray head via a gas supply pipe, wherein the plasma output from the remote plasma source enters the gas spray head through a path, and...

[0010] A movable plug that can move between a blocking state and a clearing state, wherein the blocking state is when the movable plug moves into the gas delivery pipe and is located in the path, and the clearing state is when the movable plug detaches from the gas delivery pipe and is moved away from the path.

[0011] Optionally, the gas spray head has a cavity inside, the cavity is connected to the air outlet of the gas spray head, the gas source is connected to the cavity, and the gas supply pipe is connected to the cavity.

[0012] Optionally, it further includes: a receiving channel, which is connected to the gas supply pipeline, and when the movable plug is switched to the unblocking state, it is located in the receiving channel.

[0013] Optionally, it also includes a power assembly connected to one end of the movable plug for moving the movable plug within the receiving channel and the gas delivery pipe.

[0014] Optionally, the power assembly includes:

[0015] The retractable corrugated tube is fixedly connected at one end to the storage channel and at the other end to the power plate.

[0016] A connecting rod is located inside the bellows, with one end of the connecting rod fixedly connected to the power plate and the other end fixedly connected to the movable plug;

[0017] The motor drives the power plate to extend and retract via a transmission mechanism.

[0018] Optionally, the storage channel is arranged vertically or horizontally.

[0019] Optionally, the gas pipeline includes a dielectric conduit, and the movable plug moves to the position of the dielectric conduit when in the blocking state.

[0020] Optionally, the portion of the gas pipeline other than the dielectric conduit is made of metal.

[0021] Optionally, the gas source is connected to the gas pipeline.

[0022] Optionally, the movable plug has a porous air passage so that gas can pass through it; when the movable plug is switched to the blocking state, the movable plug is located between the outlet of the gas source and the gas spray head.

[0023] Optionally, the pore size of the porous air passage is 0.1mm-50mm.

[0024] Optionally, the inner diameter of the gas transmission pipeline is 10mm-100mm.

[0025] Optionally, an RF source is electrically connected to the gas spray head via a matching device, which is used to excite the reaction gas in the reaction chamber into plasma.

[0026] Optionally, the matching device is electrically connected to the upper surface of the gas spray head.

[0027] Optionally, one end of the gas supply pipe is electrically connected to the gas spray head, and the matching device is electrically connected to the gas supply pipe between the dielectric pipe and the gas spray head.

[0028] Optionally, the movable plug is attached to the switching plate, which is provided with a movable port. In the blocking state, the movable port connects the upper and lower sides of the gas transmission pipeline, and in the unblocking state, the movable port is located in the receiving channel.

[0029] Optionally, the movable plug and the movable port can move linearly or circumferentially.

[0030] Furthermore, the present invention also provides a plasma processing apparatus, comprising:

[0031] reaction chamber;

[0032] The gas distributor, as described above, is located on the upper side of the reaction chamber;

[0033] A base is disposed on the lower side of the reaction chamber, opposite to the gas distributor;

[0034] An air pump is connected to an opening in the lower side wall of the reaction chamber.

[0035] Optionally, a power assembly is included, comprising:

[0036] The retractable component maintains an airtight seal with the gas pipeline and can extend and retract along the direction of movement of the moving plug;

[0037] Motor, which can drive the movement of retractable parts;

[0038] A connecting rod is located inside the retractable component, with one end moving with the retractable component and the other end fixedly connected to the movable plug.

[0039] Optionally, the motor is fixedly connected to the outer wall of the reaction chamber or the outer wall of the gas delivery pipe.

[0040] Furthermore, the present invention also provides a gas switching operation method for reducing parasitic plasma, using a gas distributor as described in any of the above claims, comprising the following steps:

[0041] Switch the movable plug to the blocking state and open the gas source to introduce the reaction gas;

[0042] Turn on the radio frequency source to generate plasma in the reaction chamber;

[0043] Switch the movable plug to the unblocking state, turn on the remote plasma source, and allow the plasma from the remote plasma source to enter the reaction chamber.

[0044] One of the above technical solutions has at least one of the following advantages or beneficial effects: The gas distributor installed on the reaction chamber can introduce reactive gas into the reaction chamber to generate in-situ plasma for deposition or etching processes. Simultaneously, it can be switched to a remote plasma source to output active particles for cleaning or process treatment. When the gas distributor is in the in-situ plasma state, the moving plug is in a blocking state, entering the gas delivery pipeline, reducing or avoiding discharge damage caused by parasitic plasma generated in the remote plasma gas delivery pipeline. When the gas distributor is in the remote plasma state, the moving plug is in a clearing state, leaving the gas delivery pipeline, allowing sufficient space in the gas delivery pipeline for active particles. Particles pass through; in addition, the in-situ plasma gas source can share a gas supply pipe with the remote plasma source. At the same time, the moving plug has a multi-hole gas passage for the in-situ plasma gas source to pass through. Under the premise of using the least amount of gas pipeline, the in-situ plasma gas source can enter the reaction chamber, while reducing or avoiding parasitic plasma in the gas supply pipe. Finally, a section of the gas supply pipe is made of dielectric material, while the radio frequency signal and the remote plasma source are located at both ends of the dielectric material gas supply pipe section, preventing the radio frequency signal from damaging the remote plasma source through the gas supply pipe. When the moving plug is in the blocking state, its stationary position is at the dielectric pipe, which greatly reduces the probability of parasitic plasma being generated at that position. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0046] Figure 1A schematic diagram of a capacitively coupled plasma processing device using the gas distributor of the present invention in an unblocked state is shown.

[0047] Figure 2 A schematic diagram of a capacitively coupled plasma processing device using the gas distributor of the present invention in a blocked state is shown.

[0048] Figure 3 A schematic diagram of a movable plug structure according to one embodiment is shown;

[0049] Figure 4 A schematic diagram of a capacitively coupled plasma processing device using a gas distributor according to another embodiment of the present invention is shown.

[0050] Figure 5 A schematic diagram of a capacitively coupled plasma processing apparatus using a gas distributor according to another embodiment is shown.

[0051] Figure 6 Show Figure 5 A schematic diagram of the moving plug in different states;

[0052] Figure 7 A schematic diagram of a capacitively coupled plasma processing apparatus using a gas distributor in another embodiment;

[0053] Figure 8 Show Figure 7 A schematic diagram of the moving plug in different states. Detailed Implementation

[0054] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0055] The gas distributor of the present invention includes a gas spray head for introducing reactive gas into a reaction chamber; a radio frequency source for igniting the gas in the reaction chamber; a remote plasma source for providing active particles into the reaction chamber, the plasma outlet of which is connected to the outlet of the gas spray head through a gas delivery pipe; and a movable plug that can move into the gas delivery pipe in a blocked state to fill the internal space of the gas delivery pipe, reducing the space available for gas flow, thereby reducing or avoiding the generation of parasitic plasma in the gas delivery pipe when the radio frequency source is activated. The movable plug can also move away from the gas delivery pipe in a clearing state to restore the gas delivery pipe to its original unobstructed state, which is beneficial for active particles to enter the reaction chamber through the gas delivery pipe when the remote plasma source is activated.

[0056] Figure 1 This is a schematic diagram of a capacitively coupled plasma processing device using the gas distributor of the present invention in an open state. It includes a gas spray head 110, which has multiple gas outlets on one side communicating with the reaction chamber and a gas source on the other side. The gas spray head 110 can be located above the inside of the reaction chamber 100, with its gas outlets facing the inside of the reaction chamber 100. In order to make the reaction gas evenly distributed in the chamber, the gas outlets can be multiple uniformly arranged air holes on the lower surface of the gas spray head 110. The gas source can be a gas source that provides in-situ plasma reaction gas, which can be input into the gas spray head 110 through a pipeline for gas homogenization treatment before entering the inside of the reaction chamber 100. The gas source can provide a variety of reaction gases, which are determined according to the process conditions.

[0057] The gas distributor also includes a radio frequency (RF) source 130, which is used to excite the reactive gas in the reaction chamber into plasma. In this embodiment, based on the principle of capacitively coupled plasma, the RF source 130 is connected to a matching device 132 via an RF cable 131. The matching device 132 is electrically connected to the gas spray head 110 via an RF rod 133. The gas spray head 110 can be made of metal. After the RF source 130 inputs RF energy into the gas spray head 110, it cooperates with the base 101 in the reaction chamber 100 to form in-situ plasma 104 in the space between them. In some other embodiments, the RF source 130 can also feed RF energy into the reaction chamber to form in-situ plasma 104 via a coil, utilizing the principle of inductively coupled plasma. The RF source 130 can be located outside the reaction chamber 100 and fixedly mounted on the housing, or it can be fixedly mounted above the gas spray head 110 in other ways.

[0058] The gas distributor also includes a remote plasma source 140, whose plasma outlet is connected to the outlet of the gas spray head 110 via a gas delivery pipe 150. This allows the active particles output from the remote plasma source 140 to be homogenized by the gas spray head 110 before entering the reaction chamber 100 to execute the process. The remote plasma source 140 may have an inlet pipe 141. The gas required to generate the remote plasma enters the remote plasma source 140 through the inlet pipe 141 and is excited to generate plasma inside. After a certain filtration, the required active particles enter the gas spray head 110 through the gas delivery pipe 150. The gas delivery pipe 150 may be made of metal and have a fixed shape, with an inner diameter of 10mm-100mm, sufficient for the active particles to pass through. One end of the gas delivery pipe 150 may be connected to the central area on the upper side of the gas spray head 110 to obtain a better uniform diffusion effect.

[0059] In some embodiments, the gas spray head 110 has a cavity 111, the lower side of which is connected to the gas outlet of the gas spray head 110, and the upper side is connected to the gas supply pipe 150. The gas source for in-situ plasma is also connected to the cavity 111. The cavity 111 facilitates the radial diffusion of gas or active particles, allowing the active particles of both in-situ and remote plasma to process the substrate 103 more uniformly. The radio frequency rod 133 can be connected to the lower end of the gas supply pipe 150 or directly connected to the upper side of the gas spray head 110 to feed in radio frequency energy.

[0060] To prevent the generation of parasitic plasma during switching between different plasma states, a movable plug 160 is installed in the gas distributor. This movable plug 160 can move between a blocking state and a clearing state. The outer diameter of the movable plug 160 is slightly smaller than the inner diameter of the gas delivery pipe 150. Figure 1 In the unblocked state shown, the movable plug 160 disengages from the gas delivery pipe 150, moving it away from the path through which the plasma output from the remote plasma source 140 enters the gas spray head 110. In this embodiment, this path is the space inside the gas delivery pipe 150. With the movable plug 160 in the unblocked state, the corresponding process step is the remote plasma state. Active particles can be transported downwards through the gas delivery pipe 150 without obstruction, minimizing losses caused by collisions with equipment components during transport. This ensures that the active particles reaching the substrate surface to perform their processing function maintain the required concentration. Figure 2 The diagram shows the structure of the capacitively coupled plasma processing device using the gas distributor of the present invention in the blocked state. The process step corresponding to the movable plug 160 being in the blocked state is the in-situ plasma state. Radio frequency energy is coupled into the plasma 104 above the base 101. Through the close interaction between the plasma 104 and the substrate 103, the material on the surface of the substrate 103 is removed. At this time, the radio frequency energy will also be coupled into the gas inside the gas delivery pipe 150. Under the process conditions, the gas at this location also has a certain probability of being excited to form parasitic plasma that damages the equipment, or forming contaminants that fall onto the surface of the substrate 103 through the outlet of the gas spray head 110, causing product defects. Therefore, in the in-situ plasma state, the movable plug 160 moves into the gas delivery pipe 150, so that it is in the path of the plasma output from the remote plasma source 140 entering the gas spray head 110. In this embodiment, this path is the internal space of the gas delivery pipe 150 itself.

[0061] According to the Paschen curve, under the gas pressure of this embodiment, the smaller the distance between two points, the higher the required discharge voltage. In the gas distributor of the present invention, the distance between two points refers to the distance between two solid surfaces inside the gas delivery pipe 150. When the moving plug 160 is in the unobstructed state, the two points are located on the inner surface of the gas delivery pipe 150, respectively. When the moving plug 160 is in the blocked state, that is, when it enters the gas delivery pipe 150, the two points are located on the inner wall of the gas delivery pipe 150 and the outer wall of the moving plug 160, respectively. In other words, when the moving plug 160 is in the blocked state, the distance between the two points inside the gas delivery pipe 150 that may discharge is reduced. That is to say, at this time, the threshold voltage for the gas inside the gas delivery pipe 150 to be excited into parasitic plasma is increased. When the threshold voltage is controlled above the voltage generated by the radio frequency source 130 in the gas delivery pipe 150, the generation of parasitic plasma in the gas delivery pipe 150 can be avoided.

[0062] In some embodiments, such as Figure 1-2 As shown, the gas distributor also has a receiving channel 151 fixedly connected to the gas delivery pipe 150. When the movable plug 160 is in the unblocked state, the receiving channel 151 provides space for the movable plug 160 to retract. To enable the movable plug 160 to move, the power assembly 170 is fixedly connected to one end of the movable plug 160. In this embodiment, the power assembly 170 specifically includes: a retractable bellows 171, one end of which is fixedly connected to the receiving channel 151 and the other end of which is fixedly connected to the power plate 172. The bellows 171 can maintain airtightness when the power assembly drives the moving plug 160 to move; a connecting rod 173, which is located inside the bellows 171. One end of the connecting rod 173 is fixedly connected to the power plate 172 and the other end of which is fixedly connected to the moving plug 160. The length of the connecting rod 173 is sufficient to push the moving plug 160 into the gas delivery pipe 150 to the blocked state, while the extension and retraction of the bellows 171 is sufficient for the moving plug 160 to retract to the unblocked state. That is, the connecting rod 173 transmits the power source to the moving plug 160 by extending its length in the direction of movement. In this embodiment, the power source is a motor 174, which can be fixed on the outer shell of the reaction chamber 100. An optional implementation is that the motor converts the rotational motion into linear motion to cause the power plate 172 fixedly connected to it to move, thereby driving the moving plug 160 to move.

[0063] A dielectric conduit 152 can be installed in the middle section of the gas supply pipe 150, while the rest of the gas supply pipe 150 is made of metal. The function of the dielectric conduit 152 is to block the conduction path of radio frequency current from the gas spray head 110 to the remote plasma source 140, protecting the remote plasma source 140 from damage. When the moving plug 160 is in the blocking state, that is, when the moving plug 160 is located at the position of the dielectric conduit 152, the dielectric conduit 152 is an insulating material and cannot shield electromagnetic fields. Therefore, when there is a radio frequency voltage at its two ends, a corresponding electromagnetic field will also be generated inside it, making it easier to form parasitic plasma at this position. The moving plug 160 is used to reduce the space for gas discharge and suppress the generation of parasitic plasma inside the dielectric conduit. In this embodiment, the radio frequency rod 133 can be electrically connected to the gas supply pipe 150 between the dielectric conduit 152 and the gas spray head 110.

[0064] In some embodiments, such as Figure 1 As shown, the gas source for the in-situ plasma is also delivered to the cavity 111 of the gas spray head 110 via the gas delivery pipe 150. For example, the gas source can be connected to the inlet pipe B120, which is connected to the upper end of the gas delivery pipe 150. This saves on the number of gas pipelines used and reduces space utilization. In this embodiment, one implementation of the moving plug 160 is, for example... Figure 3 As shown, it has a porous gas path 161 inside. The size of the porous gas path 161 is 0.1mm-50mm, which can be flexibly selected according to the actual process conditions and equipment size. When the process requires in-situ plasma state, the moving plug 160 is in the blocking state. The internal space of the gas pipeline 150 is divided into small-pitch spaces by the moving plug 160. The outlet of the gas source providing the reaction gas enters the gas pipeline 150 through the gas inlet pipe B120 and then enters the gas spray head 110 through the porous gas path 161 on the moving plug 160. When the radio frequency source 130 is turned on, because the size of the porous gas path 161 is small enough, parasitic plasma will not be generated in the porous gas path 161.

[0065] In the above embodiment, the movable plug 160 moves horizontally, and correspondingly, the gas delivery pipe 150 and the receiving channel 151 are also arranged horizontally. In some other embodiments, such as... Figure 4 This is a schematic diagram of the structure of a capacitively coupled plasma processing device using a gas distributor according to another embodiment of the present invention. The difference from the above embodiment is that the moving plug 160 can also move in a vertical direction. Correspondingly, the gas delivery pipe 150 and the receiving channel 151 are also arranged vertically. The motor 174 can be fixed on the outer wall of the gas delivery pipe 150, which reduces the tortuous shape of the pipe and reduces the processing difficulty.

[0066] In other embodiments, different structures are provided for driving the movable piston 160 to move, such as... Figure 5 As shown, a movable plug 160 is mounted on a switching plate 162. The switching plate 162 also has a movable port 163 parallel to the movable plug 160. The radial dimension of the movable port 163 can be the same as that of the gas delivery pipe 150 to avoid obstructing the flow of gas along the upper and lower sides of the gas delivery channel. The switching plate 162 is connected to a motor 174 via a connecting rod 173. Figure 6 As shown in state A, when in the unobstructed state, the switching plate 162 moves to the left, positioning the moving plug 160 in the receiving channel 151, while connecting the moving port 163 to the gas delivery channel, allowing the remote plasma to flow unimpeded through the gas delivery pipeline; as shown in state A. Figure 6 As shown in state B, when in the blocked state, the switching plate 162 moves to the right, so that the moving plug 160 is in the gas delivery channel, and the reaction gas enters the reaction chamber through the porous gas passage 161 in the moving plug 160.

[0067] In other embodiments, such as Figure 7 As shown, the difference from the above embodiment is that the motor 174 drives the connecting rod 173 to rotate the switching plate 162. Figure 8 As shown in state A, when in the unobstructed state, the switching plate 162 rotates around the connecting rod 173, causing the moving plug 160 to be positioned in the receiving channel 151, while the moving port 163 is connected to the gas delivery channel, allowing the remote plasma to flow unimpeded in the gas delivery pipeline; as shown in state A. Figure 8 As shown in state B, when in the blocked state, the switching plate 162 continues to rotate around the connecting rod 173, so that the moving plug 160 is located in the gas delivery channel, and the reaction gas enters the reaction chamber through the porous gas passage 161 in the moving plug 160.

[0068] Furthermore, the present invention also discloses a plasma processing apparatus, such as... Figure 1 As shown, it has a reaction chamber 100, the sidewall of which can be made of metal. On the upper side of the reaction chamber, there is any of the above-mentioned gas distributors, which has a gas spray head 110 for introducing processing gas into the reaction chamber 100. A base 101 is disposed opposite to the gas spray head 110 on the lower side of the reaction chamber 100 for supporting the substrate 103. An opening 102 is provided on the lower sidewall of the reaction chamber for connecting to a vacuum pump to flush away excess gas in the reaction chamber 100 and maintain the gas pressure in the reaction chamber 100.

[0069] Meanwhile, the present invention also discloses a gas switching operation method for reducing parasitic plasma, which uses the gas distributor of any of the above claims and includes the following steps:

[0070] When the process requires an in-situ plasma state, the movable plug 160 is switched to the barrier state, the movable plug 160 enters the gas supply pipe 150, the space inside the gas supply pipe 150 is divided to a sufficiently small size, the gas source is opened to introduce the reaction gas, and the reaction gas can enter the space above the substrate 103 of the reaction chamber 100 through the porous gas passage 161 on the movable plug 160.

[0071] Turn on the radio frequency source 130 to excite the reaction gas in the reaction chamber, so that in-situ plasma is generated in the reaction chamber to perform a more intense treatment on the substrate 103. At this time, because the threshold voltage for the generation of parasitic plasma in the space of the gas delivery pipe 150 is large enough, the radio frequency voltage generated by the radio frequency source 130 is much lower than the threshold voltage, so parasitic plasma will not be generated in the gas delivery pipe 150.

[0072] When the process requires a remote plasma state, the moving plug 160 is switched to the unblocking state, the moving plug 160 pushes out of the gas delivery channel 150, and the remote plasma source 140 is turned on, so that the active particles in the plasma generated by the remote plasma source 140 enter the space above the substrate 103 in the reaction chamber 100 to perform a gentler treatment on the substrate.

[0073] The gas distributor disclosed in this invention, mounted on a reaction chamber, can introduce reactive gas into the reaction chamber to generate in-situ plasma for deposition or etching processes. Simultaneously, it can switch to a remote plasma source to output active particles for cleaning. When the gas distributor is in in-situ plasma mode, the moving plug is in a blocking state, entering the gas delivery pipeline to reduce or avoid discharge damage caused by parasitic plasma generated in the remote plasma gas delivery pipeline. When the gas distributor is in remote plasma mode, the moving plug is in a clearing state, leaving the gas delivery pipeline, allowing sufficient space for active particles to pass through. Furthermore, the in-situ plasma gas... The source can share a gas supply pipeline with the remote plasma source. At the same time, the moving plug has a multi-hole gas passage for the in-situ plasma gas source to pass through. Under the premise of using the least amount of gas pipeline, the in-situ plasma gas source can enter the reaction chamber, while reducing or avoiding parasitic plasma in the gas supply pipeline. Finally, a section of the gas supply pipeline is made of dielectric material, while the radio frequency signal and the remote plasma source are located at both ends of the dielectric material gas supply pipeline section. This prevents the radio frequency signal from damaging the remote plasma source through the gas supply pipeline. When the moving plug is in the blocking state, its stationary position is at the dielectric pipeline, which greatly reduces the probability of parasitic plasma being generated at that position.

[0074] The gas distributor disclosed in this invention is not limited to applications in PECVD, PEALD, or substrate pretreatment; it can also be applied to other semiconductor devices, which will not be elaborated here.

[0075] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas distributor for introducing reactive gas into a reaction chamber, characterized in that, include: A gas spray head has multiple gas outlets on one side communicating with a reaction chamber, and the other side is connected to a gas source; a remote plasma source has its plasma outlet connected to the gas outlets of the gas spray head via a gas supply pipe, and the plasma output from the remote plasma source enters the gas spray head through a path; and... A movable plug with porous gas passages is provided to allow gas to pass through it; It moves between a blocking state and a clearing state. The blocking state is when the moving plug moves into the gas supply pipe and is located in the path. The clearing state is when the moving plug leaves the gas supply pipe and is moved away from the path. When the moving plug switches to the blocking state, the moving plug is located between the outlet of the gas source and the gas spray head.

2. The gas distributor as described in claim 1, characterized in that, The gas spray head has an internal cavity that is connected to the air outlet of the gas spray head. The gas source is connected to the cavity, and the gas supply pipe is connected to the cavity.

3. The gas distributor as described in claim 2, characterized in that, Also includes: The storage channel is connected to the gas supply pipeline, and when the movable plug is switched to the unblocking state, it is located in the storage channel.

4. The gas distributor as described in claim 3, characterized in that, Also includes: A power unit, connected to one end of the movable plug, is used to move the movable plug within the receiving channel and the gas supply pipe.

5. The gas distributor as described in claim 4, characterized in that, The power assembly includes: A retractable corrugated tube, one end of which is fixedly connected to a storage channel and the other end of which is fixedly connected to a power plate; a connecting rod, located inside the corrugated tube, one end of which is fixedly connected to the power plate and the other end of which is fixedly connected to a movable plug; The motor drives the power plate to extend and retract via a transmission mechanism.

6. The gas distributor as described in claim 3, characterized in that, The storage channel is set vertically or horizontally.

7. The gas distributor as claimed in claim 2, characterized in that, The gas pipeline includes a section of dielectric conduit, and the movable plug moves to the position of the dielectric conduit when in the blocking state.

8. The gas distributor as claimed in claim 7, characterized in that, The gas pipeline, except for the dielectric conduit, is made of metal.

9. The gas distributor as claimed in claim 2, characterized in that, The gas source is connected to the gas pipeline.

10. The gas distributor as claimed in claim 1, characterized in that, The pore size of the porous air passage is 0.1mm-50mm.

11. The gas distributor as claimed in claim 1, characterized in that, The inner diameter of the gas transmission pipeline is 10mm-100mm.

12. The gas distributor as claimed in claim 7, characterized in that, An RF source is electrically connected to the gas spray head via a matching device, which is used to excite the reaction gas in the reaction chamber into plasma.

13. The gas distributor as claimed in claim 12, characterized in that, The matching device is electrically connected to the upper surface of the gas spray head.

14. The gas distributor as claimed in claim 12, characterized in that, One end of the gas delivery pipe is electrically connected to the gas spray head, and the matching device is electrically connected to the gas delivery pipe between the dielectric pipe and the gas spray head.

15. The gas distributor as claimed in claim 3, characterized in that, The movable plug is attached to the switching plate, which is provided with a movable port. In the blocking state, the movable port is connected to the upper and lower sides of the gas transmission pipeline. In the unblocking state, the movable port is located in the receiving channel.

16. The gas distributor as claimed in claim 15, characterized in that, The movable plug and movable port move linearly or circumferentially.

17. A plasma processing apparatus, characterized in that, include: reaction chamber; The gas distributor according to any one of claims 1-16 is located on the upper side of the reaction chamber; A base is disposed on the lower side of the reaction chamber, opposite to the gas distributor; An air pump is connected to an opening in the lower side wall of the reaction chamber.

18. The plasma processing apparatus as claimed in claim 17, characterized in that, Including power components, which include: The retractable component maintains an airtight seal with the gas pipeline and can extend and retract along the direction of movement of the moving plug; Motor, which drives the movement of retractable parts; A connecting rod is located inside the retractable component, with one end moving with the retractable component and the other end fixedly connected to the movable plug.

19. The plasma processing apparatus as claimed in claim 18, characterized in that, The motor is fixedly connected to the outer wall of the reaction chamber or the outer wall of the gas delivery pipe.

20. A gas switching operation method for reducing parasitic plasma, using a gas distributor as described in any one of claims 1-16, comprising the following steps: Switch the movable plug to the blocking state and open the gas source to introduce the reaction gas; Turn on the radio frequency source to generate plasma in the reaction chamber; Switch the movable plug to the unblocking state, turn on the remote plasma source, and allow the plasma from the remote plasma source to enter the reaction chamber.

Images