Bonding device and method and storage medium

Abstract

The invention provides a bonding device and method. The bonding equipment comprises a bonding head used for adsorbing a to-be-bonded piece and bonding the to-be-bonded piece to a to-be-bonded first wafer; the thermal radiation light source is used for providing light for heating the first wafer; and the first chuck is used for bearing the first wafer and allowing the light to penetrate through the first chuck to irradiate and heat the first wafer so as to compensate the scaling error between the to-be-bonded piece and the first wafer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a bonding device, a bonding method, and a computer-readable storage medium. Background Art

[0002] In the field of semiconductor manufacturing technology, vertical stacking of semiconductor devices has become an increasingly feasible method to continuously improve device density and performance, from the previous wafer-wafer hybrid bonding to the latest chip-wafer hybrid bonding. Its core indicator, bonding accuracy, is on the one hand to achieve good electrical contact between bonded interconnected devices, and on the other hand, higher bonding accuracy means that the size and spacing of the interconnected copper pads can be reduced to achieve a higher density I / O interface. However, before the bonded part is bonded to the wafer, it is usually necessary to thin the bonded part to improve heat dissipation efficiency and reduce cutting difficulty. In addition, in the chip-wafer hybrid bonding, the trench between the bonded chips needs to be filled in the subsequent process. Therefore, the volume of the filling material decreases as the chip thickness decreases, reducing the possibility of void defects.

[0003] Furthermore, the surface of the chip is covered with various metal and dielectric film layers, and there are internal stresses between different materials. When the silicon substrate is thinned, the semiconductor process such as coating, annealing, thinning and bonding causes large changes in internal stress, which will aggravate the bending deformation of the chip and cause the expansion of the chip surface pattern. For example: for a 5mm×5mm chip to be bonded, the image expansion increases after thinning (for example: 50um-200um), and the difference with the wafer is about 10ppm-100ppm, which will cause an alignment error of 50nm-500nm. Therefore, in the alignment and bonding process, it is necessary to effectively compensate for the scaling item for bonding to reduce the error to within 200nm. However, traditional heating plates are usually heated based on heating wires, which usually have the defects of uncontrollable contact thermal resistance and uneven heating, and therefore cannot achieve the compensation accuracy of scaling errors.

[0004] In order to overcome the above-mentioned defects in the prior art, there is an urgent need in the art for a bonding technology for accurately compensating for the scaling error between the component to be bonded and the wafer to improve the bonding accuracy. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects in the prior art, the present invention provides a bonding device, a bonding method, and a computer-readable storage medium for accurately compensating for the scaling error between the bonded component and the wafer to improve the bonding accuracy.

[0007] Specifically, the bonding equipment provided according to the first aspect of the present invention includes: a bonding head, used to absorb the part to be bonded and bond it to a first wafer to be bonded; a thermal radiation light source, used to provide light for heating the first wafer; and a first chuck, used to support the first wafer and allow the light to pass through it to irradiate and heat the first wafer to compensate for the scaling error between the part to be bonded and the first wafer.

[0008] Furthermore, in some embodiments of the present invention, the thermal radiation light source provides light in the near-infrared band and / or the visible light band, and the first chuck is made of a quartz material that is transparent in the near-infrared band and / or the visible light band.

[0009] Furthermore, in some embodiments of the present invention, the bonding device also includes: a camera module for capturing an alignment image of the part to be bonded and the first wafer; and a controller, configured to: acquire the alignment image via the camera module, and analyze the alignment image to determine a scaling error between the part to be bonded and the first wafer; determine a target radiation power of the thermal radiation light source based on the scaling error, and control the thermal radiation light source to emit light accordingly.

[0010] Furthermore, in some embodiments of the present invention, the bonding device also includes a temperature sensor, and the step of determining the target radiation power of the thermal radiation light source based on the scaling error and controlling the emission of the thermal radiation light source accordingly includes: determining the target temperature of the first wafer based on the scaling error; acquiring the actual temperature of the first wafer in real time via the temperature sensor; and determining in real time a control signal indicating the target radiation power of the thermal radiation light source based on the difference between the target temperature and the actual temperature.

[0011] Furthermore, in some embodiments of the present invention, the bonding device also includes: an exhaust module for providing cold air for heat dissipation to the camera module, wherein the blowing direction of the cold air is opposite to the direction from the first chuck to the camera module.

[0012] Furthermore, in some embodiments of the present invention, the bonding device also includes: a thermal insulation module surrounding the first chuck to prevent heat transfer to other external modules, wherein the thermal insulation module includes a thermal insulation ring and / or a water cooling ring made of insulating material.

[0013] Furthermore, in some embodiments of the present invention, a water cooling pipe is integrated in the bonding head for cooling the part to be bonded to compensate for the scaling error between the part to be bonded and the first wafer.

[0014] Furthermore, in some embodiments of the present invention, the bonding device also includes: a second chuck, used to carry a second wafer and cut and thin it to generate a plurality of the parts to be bonded; and a pick-up head, used to pick up the cut and thinned parts to be bonded from the second wafer and transfer them to the bonding head.

[0015] In addition, the bonding method provided according to the second aspect of the present invention includes the following steps: carrying a first wafer to be bonded via a first chuck, and adsorbing the part to be bonded via a bonding head; collecting alignment images of the part to be bonded and the first wafer, and analyzing them to determine the scaling error between the part to be bonded and the first wafer; determining the target radiation power of the thermal radiation light source based on the scaling error, and controlling the thermal radiation light source to emit light accordingly, so that the light passes through the first chuck to irradiate and heat the first wafer to compensate for the scaling error; and bonding the part to be bonded to the first wafer that completes the compensation.

[0016] In addition, the computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions, which, when executed by a processor, implement the bonding method provided according to the second aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic diagram of a chip-wafer bonding process according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic structural diagram of a bonding device provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A schematic structural diagram of a water cooling pipeline provided according to some embodiments of the present invention is shown.

[0021] Reference numerals:

[0022] 10 Bonding head

[0023] 101 Parts to be bonded

[0024] 20 First Chuck

[0025] 201 First Wafer

[0026] 30 Thermal radiation light source

[0027] 40 Water cooling pipes

[0028] 50 Drive motor

[0029] 60 Pickup head

[0030] 70 Second chuck

[0031] 701 Second Wafer

[0032] 80 Expanded mold pick-up ring DETAILED DESCRIPTION

[0033] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0034] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0035] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0036] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0037] As mentioned above, in the field of semiconductor manufacturing technology, vertical stacking of semiconductor devices has become an increasingly feasible method to continuously improve device density and performance, from the previous wafer-wafer hybrid bonding to the latest chip-wafer hybrid bonding. Its core indicator, bonding accuracy, is on the one hand to achieve good electrical contact between bonded interconnected devices, and on the other hand, higher bonding accuracy means that the size and spacing of the interconnected copper pads can be reduced to achieve a higher density I / O interface. However, before the bonded part is bonded to the wafer, it is usually necessary to thin the bonded part to improve heat dissipation efficiency and reduce cutting difficulty. In addition, in the chip-wafer hybrid bonding, the trench between the bonded chips needs to be filled in the subsequent process. Therefore, the volume of the filling material decreases as the chip thickness decreases, reducing the possibility of void defects.

[0038] Furthermore, the surface of the chip is covered with various metal and dielectric film layers, and there are internal stresses between different materials. When the silicon substrate is thinned, the semiconductor process such as coating, annealing, thinning and bonding causes large changes in internal stress, which will aggravate the bending deformation of the chip and cause the chip surface pattern to expand. For example: for a 5mm×5mm chip to be bonded, the image expansion increases after thinning (for example: 50um-200um), and the difference with the wafer is about 10ppm-100ppm, which will cause an alignment error of 50nm-500nm. Therefore, in the alignment and bonding process, it is necessary to effectively compensate for the scaling item for bonding to reduce the error to within 200nm. However, traditional heating plates are usually heated based on heating wires, and their contact thermal resistance is uncontrollable, the heating is uneven, and they cannot meet the requirements of scaling error compensation accuracy.

[0039] In order to overcome the above-mentioned defects in the prior art, the present invention provides a bonding device, a bonding method, and a computer-readable storage medium for accurately compensating for the scaling error between the bonded component and the wafer to improve the bonding accuracy.

[0040] In some non-limiting embodiments, the bonding method provided in the second aspect of the present invention can be implemented based on the bonding device provided in the first aspect of the present invention. Specifically, the bonding device is configured with a memory and a processor. The memory includes but is not limited to the above-mentioned computer-readable storage medium provided in the third aspect of the present invention, on which computer instructions are stored. The processor is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the bonding method provided in the second aspect of the present invention.

[0041] Please refer to Figure 1 , Figure 1 A schematic diagram of a chip-wafer bonding process according to some embodiments of the present invention is shown.

[0042] like Figure 1 As shown, the bonding device may include a second chuck 70 and a pick-up head 60. The second chuck 70 is used to carry the second wafer 701 and cut and thin it (for example: using the ultraviolet cutting tape 90 to perform ultraviolet cutting) to generate a plurality of parts to be bonded 101 (for example: grains with circuit components such as chips). The pick-up head 60 is used to pick up the cut and thinned parts to be bonded 101 from the second wafer 701 and transfer it to the bonding head 10, wherein, after the pick-up head 60 picks up the cut and thinned parts to be bonded 101 from the second wafer 701, the pick-up head 60 can be flipped so that the parts to be bonded 101 are above the pick-up head 60 to adapt to the transfer orientation of the bonding head 10, so as to facilitate the transfer of the parts to be bonded 101. Afterwards, the bonding head 10 can bond the separated parts to be bonded 101 in the second wafer 701 to the first wafer 201.

[0043] In some embodiments, the picking method can be expanded film picking. Specifically, the expanded film picking can fix the second wafer 701 via the expanded film picking ring 80 without directly contacting the wafer surface, thereby stably and accurately picking each individual chip from the second wafer 701 while ensuring that the device is not damaged.

[0044] Please refer to Figure 2 , Figure 2 A schematic structural diagram of a bonding device provided according to some embodiments of the present invention is shown.

[0045] like Figure 2As shown, the bonding device includes a bonding head 10, a thermal radiation light source 30 and a first chuck 20. The bonding head 10 is used to absorb the bonded part 101 and bond it to the first wafer 201 to be bonded. Here, the bonded part 101 is a cut and thinned chip, and the bonding head 10 can move it via a driving motor 50. The thermal radiation light source 30 is used to provide light for heating the first wafer 201. The first chuck 20 is used to carry the first wafer 201 and allow light to pass through it to irradiate and heat the first wafer 201 to compensate for the scaling error between the bonded part 101 and the first wafer 201. Here, the thermal radiation light source 30 can provide light in the near-infrared band and / or the visible light band (for example: 700nm~1200nm), and the first chuck 20 uses a quartz material that is transparent in the near-infrared band and / or the visible light band.

[0046] In some embodiments, the bonding device further includes a camera module and a temperature sensor. The camera module is used to collect an alignment image of the bonding component 101 and the first wafer 201. The temperature sensor is used to obtain the actual temperature of the first wafer 201 in real time. Here, the camera can be a camera dedicated to zoom error measurement, and can also be compatible with a camera for bonding alignment measurement.

[0047] In some embodiments, the bonding device may further include an exhaust module. The exhaust module is used to provide cold air for heat dissipation to the camera module. Here, the blowing direction of the cold air is opposite to the direction from the first chuck 20 to the camera module. Specifically, the first chuck 20 is arranged below the camera, so the blowing direction is downward to prevent the rising heat flow from affecting the camera lens near the bonding head 10 to collect the alignment image.

[0048] Those skilled in the art will appreciate that the embodiments of the camera setting direction are only some non-limiting implementations provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all the setting directions of the camera. Optionally, the blowing direction of the cold wind can also be perpendicular to the direction from the first chuck 20 to the camera module, to achieve the same technical effect.

[0049] In some embodiments, the bonding device may further include a heat insulation module. The heat insulation module surrounds the first chuck 20 to prevent it from transferring heat to other external modules. Here, the heat insulation module includes a heat insulation ring and / or a water cooling ring made of a heat insulating material.

[0050] Please refer to Figure 3 , Figure 3 A schematic structural diagram of a water cooling pipe 40 provided according to some embodiments of the present invention is shown.

[0051] like Figure 3As shown, a water cooling pipe 40 may be integrated in the bonding head 10 for cooling the component to be bonded 101 to compensate for the scaling error between the component to be bonded 101 and the first wafer 201 .

[0052] The working principle of the above-mentioned bonding device will be described below in conjunction with some embodiments of the bonding method. Those skilled in the art will understand that these embodiments of the bonding method are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the bonding device. Similarly, the bonding device is also only some non-limiting implementation methods provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these bonding methods.

[0053] Specifically, the bonding device may first carry the first wafer 201 to be bonded via the first chuck 20 , and absorb the object 101 to be bonded via the bonding head 10 .

[0054] Afterwards, the bonding device collects the alignment images of the component to be bonded 101 and the first wafer 201 via the camera module, and analyzes the images to determine the scaling errors of the component to be bonded 101 and the first wafer 201 .

[0055] After that, the target radiation power of the thermal radiation light source 30 is determined according to the scaling error, and the thermal radiation light source 30 is controlled to emit light accordingly. Thus, light can pass through the first chuck 20 to irradiate and heat the first wafer 201 to compensate for the scaling error. Specifically, the camera module determines the target temperature of the first wafer 201 according to the scaling error; obtains the actual temperature of the first wafer 201 in real time through the temperature sensor; and determines the control signal indicating the target radiation power of the thermal radiation light source 30 in real time according to the difference between the target temperature and the actual temperature.

[0056] Optionally, the bonding equipment can also enable the thermal radiation light source 30 to perform continuous and stable heating to keep the target temperature constant, thereby improving the compensation accuracy. Specifically, the bonding head 10 transfers the first wafer 201 to a quartz chuck with bumps, and sucks the first wafer 201 flat through high vacuum. Afterwards, the thermal radiation light source 30 is turned on to heat the first wafer 201, so that the first wafer 201 is constant at a fixed temperature between 296K and 336K, and the accuracy error is <1K, and the wafer temperature uniformity is <0.5K.

[0057] Finally, the bonding device bonds the to-be-bonded component 101 to the compensated first wafer 201 .

[0058] Those skilled in the art will understand that the cut and thinned component to be bonded 101 will inevitably have a certain pattern expansion. Therefore, even if the radiation power of the thermal radiation light source 30 is not quantitatively controlled, the first wafer 201 can be heated, which basically compensates for the scaling error between the component to be bonded 101 and the first wafer 201.

[0059] In summary, the present invention provides a bonding device, a bonding method, and a storage medium, which can be used to accurately compensate for the scaling error between the bonded component 101 and the wafer to improve the bonding accuracy.

[0060] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0061] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0062] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0063] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A bonding device, characterized in that: include: A bonding head, used for absorbing the part to be bonded and bonding it to the first wafer to be bonded; a thermal radiation light source, used to provide light for heating the first wafer; as well as The first chuck is used to carry the first wafer and allow the light to pass therethrough to irradiate and heat the first wafer, so as to compensate for the scaling error between the component to be bonded and the first wafer.

2. The bonding device according to claim 1, characterized in that The thermal radiation light source provides light in the near infrared band and / or the visible light band, and the first chuck is made of a quartz material that is transparent in the near infrared band and / or the visible light band.

3. The bonding device according to claim 1, characterized in that Also includes: A camera module, used for acquiring an alignment image of the component to be bonded and the first wafer; as well as The controller is configured to: acquire the alignment image via the camera module and analyze it to determine the scaling error between the part to be bonded and the first wafer; determine the target radiation power of the thermal radiation light source according to the scaling error, and control the thermal radiation light source to emit light accordingly.

4. The bonding device according to claim 3, characterized in that The bonding device also includes a temperature sensor, The step of determining the target radiation power of the thermal radiation light source according to the scaling error and controlling the emission of the thermal radiation light source accordingly includes: determining the target temperature of the first wafer according to the scaling error; acquiring the actual temperature of the first wafer in real time via the temperature sensor; and determining a control signal indicating the target radiation power of the thermal radiation light source in real time according to the difference between the target temperature and the actual temperature.

5. The bonding device according to claim 3, characterized in that Also includes: An exhaust module is used to provide cold air for heat dissipation to the camera module, wherein a blowing direction of the cold air is opposite to a direction from the first chuck to the camera module.

6. The bonding device according to claim 1, characterized in that Also includes: A heat-insulating module surrounds the first chuck to prevent it from transferring heat to other external modules, wherein the heat-insulating module includes a heat-insulating ring and / or a water-cooling ring made of a heat-insulating material.

7. The bonding device according to claim 1, characterized in that The bonding head is also integrated with a water cooling pipe for cooling the part to be bonded to compensate for the scaling error between the part to be bonded and the first wafer.

8. The bonding device according to claim 1, characterized in that Also includes: A second chuck is used to carry the second wafer and cut and thin it to generate a plurality of the parts to be bonded; as well as The pickup head is used to pick up the cut and thinned parts to be bonded from the second wafer and transfer them to the bonding head.

9. A bonding method, characterized in that: The following steps are involved: The first wafer to be bonded is carried by the first chuck, and the bonding head absorbs the bonding piece to be bonded; Acquiring an alignment image of the component to be bonded and the first wafer, and analyzing the alignment image to determine a scaling error between the component to be bonded and the first wafer; Determining a target radiation power of a thermal radiation light source according to the scaling error, and controlling the thermal radiation light source to emit light accordingly, so that the light passes through the first chuck to irradiate and heat the first wafer, so as to compensate for the scaling error; as well as The bonded member is bonded to a first wafer on which the compensation is completed.

10. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the bonding method as claimed in claim 9 is implemented.

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