Wafer processing device and processing method

Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a wafer processing device and method, and the device comprises a processing groove which is used for accommodating wafer processing liquid; the supporting group comprises a plurality of supporting parts which can independently or jointly support the wafer to be in a vertical state, and each supporting part is provided with a contact surface which is in contact with the wafer when supporting the wafer; the action system is connected with the multiple supporting parts and used for driving the multiple supporting parts to move in a matched mode, and the contact surface of at least one supporting part can be in a state of being in contact with the wafer under driving of the action system; the contact surface of at least one supporting part is driven by the action system to enter the wafer processing liquid, and the area intersected with the liquid level can be in a state of being separated from the wafer. According to the scheme, the conditions that wafer cleaning or etching is insufficient and defects are generated on the surface of the wafer can be improved.

Description

Technical Field

[0001] The present disclosure belongs to the field of semiconductor technology, and specifically relates to a wafer processing device and a processing method. Background Art

[0002] In the semiconductor manufacturing process, wet cleaning and wet etching technologies are particularly important to improve chip yield and wafer recycling rate. However, when using a support structure to support the wafer into a processing tank for wet cleaning or wet etching, bubbles are easily generated at the contact point between the wafer and the support structure, resulting in insufficient cleaning or etching, and ultimately defects. Summary of the invention

[0003] The embodiments of the present disclosure provide a wafer processing device and a processing method for improving the situation where wafer cleaning or etching is insufficient and defects occur on the wafer surface.

[0004] A first aspect of the present disclosure provides a wafer processing device, comprising:

[0005] A processing tank for containing a wafer processing liquid;

[0006] A support group, comprising a plurality of support parts, capable of independently or jointly supporting a wafer in an upright state, wherein the support parts have a contact surface that contacts the wafer when supporting the wafer;

[0007] The action system is connected to the plurality of supporting parts respectively, and is used to drive the plurality of supporting parts to move in coordination with each other, wherein:

[0008] At least one contact surface of the support portion can be in contact with the wafer under the drive of the action system;

[0009] The contact surface of at least one of the supporting parts can be in a state of being separated from the wafer in an area where the contact surface intersects with the liquid surface during the process in which the action system drives the supporting part to enter the wafer processing liquid.

[0010] A second aspect of the present disclosure provides a wafer processing method, comprising:

[0011] adding wafer processing fluid into the processing tank;

[0012] Using a support group to support the wafer in an upright state, the support group includes a plurality of support parts respectively connected to the action system, the plurality of support parts can independently or jointly support the wafer, and the support parts have a contact surface that contacts the wafer when supporting the wafer;

[0013] The motion system is used to drive the multiple supporting parts to move in coordination with each other, so as to drive the wafer to enter the wafer processing liquid, wherein, during the process of the wafer entering the wafer processing liquid:

[0014] A contact surface of at least one of the support parts is in contact with the wafer under the drive of the action system;

[0015] The contact surface of at least one of the supporting parts is in a state of being separated from the wafer in an area where the contact surface intersects with the liquid surface during the process in which the action system drives the supporting part to enter the wafer processing liquid.

[0016] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0017] By utilizing the cooperation between the action system and multiple support parts, the wafer can be supported by the support parts in an upright state throughout the entire process. At the same time, the contact surface of at least one support part that intersects with the liquid surface can be separated from the wafer when the action system drives it into the wafer processing liquid. This allows the wafer to break away from the position of this support part and enter the wafer processing liquid in a contactless manner, thereby improving the situation where defects are easily generated at the contact position between the wafer and the support part and it is difficult to be fully cleaned or wet-etched. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0019] Figure 1 A schematic diagram showing the positional relationship between a wafer processing device, a wafer, and a wafer processing liquid described in an embodiment of the present disclosure is shown.

[0020] Figure 2 A schematic structural diagram of the first supporting portion or the second supporting portion described in an embodiment of the present disclosure is shown.

[0021] Figure 3 A schematic structural diagram of the first supporting portion or the second supporting portion described in another embodiment of the present disclosure is shown.

[0022] Figure 4 A schematic diagram showing the positional relationship between a wafer processing device, a wafer, and wafer processing described in another embodiment of the present disclosure is shown.

[0023] Figure 5 A schematic diagram showing the positional relationship between a wafer processing device, a wafer, and a wafer processing liquid described in another embodiment of the present disclosure is shown.

[0024] Figures 6 to 13A schematic diagram showing the positional relationship between a wafer processing device, a wafer, and a wafer processing liquid when completing different stages in the wafer processing method described in an embodiment of the present disclosure is shown.

[0025] Description of reference numerals:

[0026] 10. Treatment tank;

[0027] 11. Support group; 11a. First support part; 11b. Second support part; 110. Support rod; 111. Constraint wall; 112. Constraint groove; 1120. Guide groove section; 1121. Limiting groove section; 113. Buffer layer;

[0028] 12. Action system; 120. Driving mechanism; 121. First lifting mechanism; 122. Second lifting mechanism; 123. Horizontal moving mechanism;

[0029] 13. Wafer processing fluid;

[0030] 14. Wafer;

[0031] 15. Overflow recovery tank;

[0032] 16. Liquid supply system; 160. Liquid supply storage tank; 161. Liquid supply pipeline; 162. Liquid supply pump;

[0033] 17. Liquid return system; 170. Concentration detector; 171. Liquid return pipeline; 172. Liquid return pump; 173. Feeder;

[0034] X, horizontal direction, Z, vertical direction. DETAILED DESCRIPTION

[0035] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of the example embodiments to those skilled in the art.

[0036] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0037] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0038] In the semiconductor manufacturing process, it is often necessary to use a support structure to support the wafer into the processing tank to perform a wet cleaning or wet etching process. However, due to the different materials of the wafer surface and the support structure surface, for example, the wafer surface may include hydrophilic materials such as silicon, silicon oxide, and silicon nitride, and in order to prevent corrosion by chemicals (hydrofluoric acid, ammonium fluoride, etc.), the surface material of the support structure is often made of hydrophobic materials such as polytetrafluoroethylene (PTFE) to prevent corrosion by chemicals (hydrofluoric acid, ammonium fluoride, etc.). However, at the moment when the wafer enters the wafer processing liquid in the processing tank, tiny bubbles are easily generated at the position where the wafer and the support structure contact. The tiny bubbles cause the particles generated by the damage to the edge of the wafer or the byproducts of the chemical reaction, such as H2SiF6 and Si(OH)4, to be easily adsorbed on the wafer, thereby easily causing surface defects. In addition, the tiny bubbles adsorbed on the surface of the wafer will also cause the contact between the wafer and the support structure to be difficult to be fully cleaned or wet-etched, which will affect the subsequent product manufacturing yield.

[0039] Based on the above problems, the present disclosure provides a wafer processing device, such as Figure 1 As shown, the wafer processing device at least includes a processing tank 10, a support group 11 and a motion system 12.

[0040] The processing tank 10 is used to contain a wafer processing liquid 13, which may be deionized water or a chemical liquid, so as to perform a process such as cleaning or etching on the wafer 14. For example, the chemical liquid may include DHF (Diluted HF, hydrofluoric acid dilution), BHF (Buffered HF, hydrofluoric acid buffer), SPM (a mixture of sulfuric acid H2SO4, hydrogen peroxide H2O2 and deionized water), SC1 (a mixture of ammonia NH4OH, hydrogen peroxide H2O2 and deionized water), SC2 (a mixture of hydrochloric acid HCl, hydrogen peroxide H2O2 and deionized water), phosphoric acid H3PO4, and the like.

[0041] The support group 11 may include multiple support parts, and the multiple support parts can independently or jointly support the wafer 14 in an upright state, and the support parts have a contact surface that contacts the wafer 14 when supporting the wafer 14; wherein, this upright state refers to a state in which the axial direction of the wafer 14 is perpendicular or approximately perpendicular to the vertical direction Z. It can also be understood that the upright state refers to a direction in which the axial direction of the wafer 14 is parallel or approximately parallel to the horizontal direction X.

[0042] The motion system 12 may be connected to a plurality of supporting parts respectively, and is used to drive the plurality of supporting parts to move in coordination with each other, so as to drive the wafer 14 to move relative to the wafer processing liquid 13 .

[0043] Among them, the contact surface of at least one support part can be in contact with the wafer 14 under the drive of the action system 12; the contact surface of at least one support part can be in a state of being separated from the wafer in the area where it intersects with the liquid surface during the process of the action system driving it into the wafer processing liquid. That is to say, by using the cooperation between the action system 12 and the support group 11 (that is, multiple support parts), the wafer 14 can be supported by the support part in an upright state throughout the whole process. At the same time, the contact surface of at least one support part can be in a state of being separated from the wafer 14 in the area where it intersects with the liquid surface during the process of the action system 12 driving it into the wafer processing liquid 13. Therefore, the wafer 14 can be separated from the position of the support part and enter the wafer processing liquid 13 in a contact-free manner, thereby improving the situation where defects are easily generated at the position where the wafer 14 contacts the support part and is not easy to be fully cleaned or wet-etched.

[0044] It should be understood that the entire process mentioned above may include a process in which the wafer 14 enters the wafer processing liquid 13, a process in which the wafer 14 is processed in the wafer processing liquid 13, and a process in which the wafer 14 comes out of the wafer processing liquid 13 after being processed, etc. The following is a specific description using an example in which the multiple support parts in the support group of the present disclosure include the first support part 11a and the second support part 11b.

[0045] In this embodiment, the horizontal height of the second support portion 11b is configured to be higher than the horizontal height of the first support portion 11a when the first support portion 11a and the second support portion 11b jointly support the wafer 14. In other words, when the first support portion 11a and the second support portion 11b jointly support the wafer 14, the portion of the wafer 14 in contact with the first support portion 11a is closer to the center of the wafer 14 in the vertical direction Z than the portion of the wafer 14 in contact with the second support portion 11b.

[0046] It should be noted that the horizontal height mentioned in the present disclosure refers to the distance between an object (e.g., a support portion) and the horizontal ground in the vertical direction Z. In addition, the portion of the wafer 14 for contacting the contact surface of the first support portion 11a may be defined as a first contact portion, and the portion of the wafer 14 for contacting the contact surface of the second support portion 11b may be defined as a second contact portion.

[0047] The motion system 12 can be connected to the first support part 11a and the second support part 11b respectively, and can drive the first support part 11a and the second support part 11b to move independently, so as to independently drive the wafer 14 to move up and down to enter and exit the wafer processing liquid 13. In other words, the lifting position and lifting speed of the first support part 11a and the second support part 11b can be independent of each other and can be controlled by the motion system 12 respectively.

[0048] Among them, the contact surface of the first support part 11a, in the process of the action system 12 driving it into the wafer processing liquid 13, the area where the contact surface intersects with the liquid surface can be in a state separated from the wafer 14, and the contact surface of the second support part 11b can be in a state of contact with the wafer under the drive of the action system 12, so as to play a role in supporting the wafer 14 in an upright state when the contact surface of the first support part 11a is separated from the first contact part of the wafer 14; the contact surface of the second support part 11b, in the process of the action system 12 driving it into the wafer processing liquid 13, the area where the contact surface intersects with the liquid surface can be in a state separated from the wafer 14, and the contact surface of the first support part 11a can be in a state of contact with the wafer under the drive of the action system, so as to play a role in supporting the wafer 14 in an upright state when the contact surface of the second support part 11b is separated from the second contact part of the wafer 14.

[0049] It should be noted that the contact surface of the support part can be moved to a position separated from the contact part of the wafer 14 when the action system 12 drives the support part to move downward in the vertical direction Y, and can also be moved to a position separated from the contact part of the wafer 14 when the action system 12 drives the support part to move in the horizontal direction X, and so on. It is not limited to the two forms mentioned. As long as it can be ensured that the contact surface of the support part can be in a state separated from the wafer 14 in the area where it intersects with the liquid surface during the process of the action system driving it to enter the wafer processing liquid 13. No further explanation will be given here.

[0050] It can be understood that the support part generally has a certain rigidity and is not easy to deform. In order to form a stable support, the contact surface of the support part and the area intersecting with the liquid surface in the process of the action system driving it into the wafer processing liquid 13 can be in a state of being separated from the wafer 14, and the separated support part can be completely detached from the wafer 14; when the support group includes multiple support parts connected together, even if the contact surfaces of the multiple support parts form a continuous surface, it should be understood that different support parts have different contact surfaces.

[0051] In this embodiment, since the horizontal height of the second support portion 11b is configured to be higher than the horizontal height of the first support portion 11a when the first support portion 11a and the second support portion 11b jointly support the wafer 14, that is, the first contact portion of the wafer 14 is lower than the second contact portion of the wafer 14. Therefore, the first support portion 11a and the second support portion 11b can be driven by the action system 12 to perform corresponding movements respectively, so that the first contact portion and the second contact portion of the wafer 14 enter the wafer processing liquid 13 successively in a contactless manner, thereby improving the situation in which bubbles are formed due to the different materials of the wafer 14 and the support portion, causing defects to be easily generated on the surface of the wafer 14. It can also improve the situation in which the contact position cannot be fully cleaned or wet-etched due to the contact between the wafer 14 and the support portion, that is, the situation in which defects are easily generated and difficult to be fully cleaned or wet-etched at the contact position between the wafer 14 and the support portion can be improved.

[0052] Among them, the contact-free method refers to that the contact portion of the wafer 14 is in a state of separation from the contact surface of the corresponding support portion when entering the wafer processing liquid 13. Specifically: the action system 12 can be used to drive at least one of the first support portion 11a and the second support portion 11b to move along the vertical direction Z, so that the contact surface of the first support portion 11a is separated from the first contact portion of the wafer 14. At this time, the first contact portion of the wafer 14 is in a state of no contact point, and the contact surface of the second support portion 11b is in contact with the second contact portion of the wafer 14. In this way, the action system 12 can be used to drive the second support portion 11b to move downward along the vertical direction Z to drive the first contact portion of the wafer 14 to enter the wafer 14 in a state of no contact point. into the wafer processing liquid 13; thereafter, the motion system 12 is used to drive at least one of the first support part 11a and the second support part 11b to move along the vertical direction Z, so that the second support part 11b is separated from the second contact part of the wafer 14. At this time, the second contact part of the wafer 14 is in a state of no contact point, and the first support part 11a is in contact with the first contact part of the wafer 14. In this way, the motion system 12 can be used to drive the first support part 11a to move downward to drive the second contact part of the wafer 14 to enter the wafer processing liquid 13 in a state of no contact point.

[0053] It should be noted that when the motion system 12 is used to drive the second support part 11b to move downward so as to drive the first contact part of the wafer 14 to enter the wafer processing liquid 13 without a contact point, the first support part 11a can also be driven by the motion system 12 to move downward or remain motionless, as long as it can be ensured that the first contact part of the wafer 14 enters the wafer processing liquid 13 without a contact point. Similarly, when the motion system 12 is used to drive the first support part 11a to move downward so as to drive the second contact part of the wafer 14 to enter the wafer processing liquid 13 without a contact point, the second support part 11b can also be driven by the motion system 12 to move downward or remain motionless, as long as it can be ensured that the second contact part of the wafer 14 enters the wafer processing liquid 13 without a contact point.

[0054] In this embodiment, the wafer 14 is supported by utilizing the first supporting portion 11a and the second supporting portion 11b, and the first supporting portion 11a and the second supporting portion 11b are enabled to move independently under the drive of the motion system 12. In this way, one of the first supporting portion 11a and the second supporting portion 11b can be used to support the wafer 14, and the other can be detached from the wafer 14, so that the position where the wafer 14 is detached from the supporting portion can contact the wafer processing liquid 13 in the processing tank 10 in a non-contact manner, thereby improving the situation where defects are easily generated at the position where the wafer 14 contacts the supporting portion and is difficult to be fully cleaned or wet-etched.

[0055] For example, there may be multiple second support portions 11b disposed on opposite sides of the first support portion 11a, so that when the contact surface of the first support portion 11a is separated from the first contact portion of the wafer 14, the multiple second support portions 11b cooperate to stably support the wafer 14.

[0056] like Figure 1 As shown, two second supporting parts 11 b may be provided and located at the same level to ensure that the supporting forces on both sides of the wafer 14 are more balanced, thereby ensuring the supporting stability of the wafer 14 .

[0057] The first supporting portion 11a may be provided with one. When the first supporting portion 11a is provided with one, in order to ensure that the first supporting portion 11a can independently and stably support the wafer 14 when the second supporting portion 11b is separated from the wafer 14, the first supporting portion 11a may be in surface contact with the wafer 14, and the center of the wafer 14 is projected onto the middle area of ​​the first supporting portion 11a, that is, the lowest point of the wafer 14 may be supported on the middle area of ​​the first supporting portion 11a; but the present invention is not limited thereto, and the first supporting portion 11a may also be provided with multiple, for example: Figure 1As shown in the three figures, the plurality of first supporting portions 11 a are arranged at intervals along the circumference of the wafer 14 , so that the wafer 14 can be supported at multiple points. The wafer 14 can be stably supported by cooperating with the plurality of first supporting portions 11 a .

[0058] It should be understood that the number of the first support portions 11a is not limited to Figure 1 The three shown in FIG. 1 may also be one, two, four, etc.

[0059] In this embodiment, the support portion may include a support rod 110 and a plurality of constraint walls 111. The plurality of constraint walls 111 may be formed at the top of the support rod 110 and arranged at intervals along the extension direction of the support rod 110. A constraint groove 112 is formed between two adjacent constraint walls 111 and the support rod 110. The constraint groove 112 is used for inserting the wafer 14 to constrain the axial movement of the wafer 14. The support portion can further ensure the stability of the support portion in supporting the wafer 14 through the joint action of the support rod 110 and the constraint wall 111.

[0060] For example, the number of constraint walls 111 in the support portion can be set to three or more, so that two or more constraint grooves 112 can be formed, thereby supporting multiple wafers 14 to enter the processing groove 10 for batch processing at the same time. In other words, the wafer processing device of this embodiment can be a wafer batch processing equipment to improve production capacity and reduce production costs.

[0061] In one alternative, if Figure 2 As shown, in the direction from the top end to the bottom end of the constraint groove 112: the groove width of the constraint groove 112 along the extension direction of the support rod 110 (which can also be understood as the axial direction of the wafer 14) gradually decreases. In other words, this constraint groove 112 can be a V-shaped constraint groove, which not only plays an axial constraint role on the wafer 14, but also facilitates the smooth insertion of the wafer 14, and reduces the contact area between the constraint wall 111 and the wafer 14, thereby reducing the wear rate of the wafer 14.

[0062] In another alternative, if Figure 3 As shown, the constraint groove 112 may include a connected guide groove section 1120 and a limiting groove section 1121, wherein the guide groove section 1120 is located on the side of the limiting groove section 1121 away from the support rod 110, wherein, in the direction from the top end to the bottom end of the constraint groove 112: the groove width of the guide groove section 1120 in the extension direction of the support rod 110 gradually decreases, and in the direction from the top end to the bottom end of the constraint groove 112: the groove width of the limiting groove section 1121 in the extension direction of the support rod 110 is equal, this guide groove section 1120 is mainly used to facilitate the smooth insertion of the wafer 14, and the limiting groove section 1121 mainly plays the role of axially constraining the wafer 14 to better ensure that the wafer 14 is in an upright supported state.

[0063] Furthermore, the height of the limiting groove section 1121 can be less than or equal to 3 mm, such as 1 mm, 2 mm, 3 mm, etc., so as to axially constrain the wafer 14 while reducing the contact area between the constraint wall 111 and the wafer 14, thereby reducing the wear rate of the wafer 14.

[0064] In this embodiment, reference Figure 3 and Figure 4 As shown, in addition to the support rod 110 mentioned above, the support part may also include a buffer layer 113 wrapping the constraint wall 111. The hardness of the buffer layer 113 is less than the hardness of the constraint wall 111. In this way, while ensuring the supporting capacity of the support part, the wear rate of the wafer 14 when inserted into the constraint groove 112 can also be reduced.

[0065] It should be noted that the buffer layer 113 is not limited to wrapping the constraint wall 111 , but may also wrap the support rod 110 , which can also reduce the possibility of damage caused by collision or contact between the wafer 14 and the support rod 110 .

[0066] For example, the constraint wall 111 and the support rod 110 of this embodiment may be an integrated structure to ensure the structural stability of the support portion. The materials of the support rod 110 and the constraint wall 111 include but are not limited to quartz, and the material of the buffer layer 113 includes but is not limited to polytetrafluoroethylene, so that while providing buffering capacity, it can also protect the support rod 110 and the constraint wall 111 to prevent the support rod 110 and the constraint wall 111 from being corroded by the wafer processing liquid 13.

[0067] It should be understood that in order to ensure the supporting performance of the supporting parts, all supporting parts in the supporting group 11 are located in the area below the center of the wafer 14 (ie, located in the area near the center of the wafer 14 and close to the bottom of the processing tank 10).

[0068] In addition, it should be noted that the multiple support parts in the support group 11 are not limited to the first support part 11a and the second support part 11b mentioned above, and the structure and number of the first support part 11a and the second support part 11b are not limited to the above-mentioned contents. In this embodiment, the first support part 11a and the second support part 11b can also be designed as an openable and closable clamping structure, so that when one support part detaches from the supporting wafer 14, the other support part can clamp the wafer 14 to ensure its support stability.

[0069] In this embodiment, the motion system 12 may include a driving mechanism 120, a first lifting mechanism 121, and a second lifting mechanism 122. The first lifting mechanism 121 may be connected to the driving mechanism 120 and the first support portion 11a, and the first lifting mechanism 121 is used to drive the first support portion 11a to move along the vertical direction Z under the drive of the driving mechanism 120; the second lifting mechanism 122 may be connected to the driving mechanism 120 and each second support portion 11b, and the second lifting mechanism 122 is used to drive all second support portions 11b to move synchronously along the vertical direction Z under the drive of the driving mechanism 120, that is, the first support portion 11a and the second support portion 11b are each matched with a lifting mechanism to drive them to move along the vertical direction Z, so that the difficulty of the driving mechanism 120 to drive the first support portion 11a and the second support portion 11b respectively is reduced. In addition, the same group of support portions can be connected to the same lifting mechanism, that is, multiple second support portions 11b are connected to the same second lifting mechanism 122, so as to further simplify the driving design of the driving mechanism 120.

[0070] It should be noted that the driving mechanism 120 of this embodiment can be a driving controller such as a single chip microcomputer, and its structure is not described in detail here, as long as it can drive the first lifting mechanism 121 and the second lifting mechanism 122 to perform corresponding operations (i.e., the wafer processing method mentioned in the embodiments below). The first lifting mechanism 121 and the second lifting mechanism 122 may include a screw lifting mechanism, a gear rack lifting mechanism, etc., which are not specifically limited here, as long as they can drive the support part to move along the vertical direction Z under the drive of the driving mechanism 120.

[0071] Among them, Figure 4 As shown, the motion system 12 may further include a horizontal moving mechanism 123, which may be connected to the driving mechanism 120, the first lifting mechanism 121 and the second lifting mechanism 122. The horizontal moving mechanism 123 may drive the first lifting mechanism 121, the first support portion 11a, the second lifting mechanism 122 and the second support portion 11b to move horizontally along the horizontal direction X under the drive of the driving mechanism 120. This design may utilize the horizontal moving mechanism 123 to horizontally move the processed wafer 14 as a whole from above the processing tank 10 to avoid delaying subsequent operation procedures. The unprocessed wafer 14 may also be first carried on the support group at other locations, and then moved to above the processing tank 10 using the horizontal moving mechanism 123 to improve the production processing rhythm.

[0072] Likewise, this embodiment does not impose too many restrictions on the horizontal moving mechanism 123, as long as it can realize the function of driving the first lifting mechanism 121, the first supporting part 11a, the second lifting mechanism 122 and the second supporting part 11b to move horizontally as a whole.

[0073] like Figure 5As shown, the wafer processing device of the embodiment of the present disclosure may also include an overflow recovery tank 15 and a liquid supply system 16. The overflow recovery tank 15 is provided with a processing tank 10, and the inner tank wall of the overflow recovery tank 15 is spaced apart from the outer tank wall of the processing tank 10, and is used to recover the wafer processing liquid 13 overflowing from the processing tank 10; the liquid supply system 16 may include a liquid supply storage tank 160, a liquid supply pipeline 161, and a liquid supply pump 162 connected to the liquid supply pipeline 161, one end of the liquid supply pipeline 161 is connected to the processing tank 10, and the other end is connected to the liquid supply storage tank 160, the liquid supply storage tank 160 is used to store the wafer processing liquid 13, and the liquid supply pump 162 is used to pump the wafer processing liquid 13 in the liquid supply storage tank 160 into the processing tank 10 through the liquid supply pipeline 161.

[0074] In this embodiment, a liquid supply system 16 is provided to provide wafer processing liquid 13 into the processing tank 10, so that the wafer processing liquid 13 in the processing tank 10 can be kept in an overflow state during the wafer processing process. In this way, the wafer processing liquid in the processing tank 10 can be kept in a flowing and constantly updated state, thereby maintaining the composition and concentration stable, so as to improve the effect of wafer 14 cleaning or wet etching processing. In addition, an overflow recovery tank 15 is provided to recover the overflowed wafer processing liquid 13 to avoid polluting the working environment.

[0075] It should be understood that the liquid supply system 16 can not only make the wafer processing liquid in the processing tank 10 overflow during the wafer processing process, but also make the wafer 14 overflow when entering the wafer processing liquid.

[0076] like Figure 5 As shown, the wafer processing device may also include a liquid return system 17, which may include a concentration detector 170, a liquid return pipeline 171 and a liquid return pump 172. The concentration detector 170 may be arranged in the overflow recovery tank 15 to detect the concentration information of the wafer processing liquid 13 in the overflow recovery tank 15; one end of the liquid return pipeline 171 is connected to the overflow recovery tank 15, and the other end is connected to the liquid supply tank 160; the liquid return pump 172 is connected to the liquid return pipeline 171 and the concentration detector 170, and the liquid return pump 172 is used to detect the concentration information of the wafer processing liquid 13 in the overflow recovery tank 15. When the concentration information detected by the detector 170 meets the target concentration range, the wafer processing liquid 13 recovered in the overflow recovery tank 15 is pumped to the liquid supply tank 160 through the return liquid pipeline 171, so as to realize the recovery of the wafer processing liquid 13 and thus reduce the cost. At the same time, it can also avoid the situation where the liquid in the liquid supply tank 160 does not meet the standard due to the concentration of the recovered wafer processing liquid 13 not meeting the standard, thereby ensuring that the wafer processing liquid 13 delivered to the processing tank 10 from the liquid supply tank 160 always meets the requirements, thereby improving the processing effect of the wafer 14.

[0077] Furthermore, if Figure 5As shown, the liquid return system 17 also includes a feeder 173, which is connected to the concentration detector 170. The feeder 173 is used to add corresponding materials to the overflow recovery tank 15 when the concentration information detected by the concentration detector 170 does not meet the target concentration range, and is used to stop adding corresponding materials to the overflow recovery tank 15 when the concentration information detected by the concentration detector 170 meets the target concentration range. This can improve the recovery rate of the wafer processing liquid 13, so that the wafer processing liquid 13 in the entire wafer processing device is in a circulating state.

[0078] It should be understood that the wafer processing liquid 13 in the processing tank 10 of the present disclosure can also be in a non-overflowing state during the entire process, as long as efficient cleaning or etching of the wafer can be achieved. If it is in a non-overflowing state, the design of the overflow recovery tank 15 and the return liquid pipeline 171 and the return liquid pump 172 in the return liquid system 17 can also be omitted, depending on the specific situation.

[0079] Based on the wafer processing device mentioned in any of the aforementioned embodiments, the embodiment of the present disclosure further provides a wafer processing method. The wafer processing method may at least include step S1, step S2 and step S3. Each step is described in detail below.

[0080] In step S1 , a wafer processing liquid 13 is added into the processing tank 10 .

[0081] For example, after determining that the processing tank 10 is placed in the overflow recovery tank 15 mentioned above, the wafer processing liquid 13 is added to the processing tank 10 using the liquid supply system mentioned above, so that the wafer processing liquid 13 in the processing tank 10 is in an overflow state at least during the processing stage of the wafer 14, thereby making the wafer processing liquid 13 in the processing tank 10 fluid, which can improve the cleaning or etching effect of the wafer 14.

[0082] It should be understood that the wafer processing liquid 13 in the processing tank 10 is not limited to being in an overflow state during the processing stage of the wafer 14, but can also be in an overflow state during the liquid inlet stage, liquid outlet stage, etc. of the wafer 14, depending on the specific situation.

[0083] In step S2, the aforementioned support group 11 is used to support the wafer 14 in an upright state. For example, before the wafer processing liquid 13 phase is started (i.e., the wafer 14 enters the liquid phase), all the support parts in the support group 11 can be used to support the wafer 14 to stand upright above the wafer processing liquid 13, or some of the support parts in the support group 11 can be used to support the wafer 14 to stand upright above the wafer processing liquid 13.

[0084] In step S3, the aforementioned motion system 12 is utilized to drive multiple support parts to move in coordination with each other, so as to drive the wafer 14 into the wafer processing liquid 13, wherein during the process of the wafer 14 entering the wafer processing liquid 13: the contact surface of at least one support part is in contact with the wafer 14 under the drive of the motion system 12; the contact surface of at least one support part, in the process of the motion system driving it to enter the wafer processing liquid, the area intersecting with the liquid surface is separated from the wafer.

[0085] Among them, at least two supporting parts are configured to be at different horizontal heights when jointly supporting the wafer 14, and the contact surface of each supporting part that intersects with the liquid surface during the process of the action system 12 driving it into the wafer processing liquid 13 is in a state separated from the wafer 14.

[0086] The wafer processing method is described in detail by taking the multiple supporting parts in the supporting group 11 including the aforementioned first supporting part 11 a and the second supporting part 11 b as an example.

[0087] In this embodiment, the process of the wafer 14 entering the wafer processing liquid 13 may include: after confirming that the contact surface of the first supporting portion 11 a is at a position separated from the wafer 14 , sequentially performing a first descending stage, a first adjusting stage and a second descending stage.

[0088] In the first descending stage, the motion system 12 can be used to drive the second support portion 11b to descend along the vertical direction Z, so as to drive the first contact portion of the wafer 14 to enter the wafer processing liquid 13 in a state separated from the contact surface of the first support portion 11a, and the second contact portion of the wafer 14 is located above the wafer processing liquid 13, such as Figure 7 shown.

[0089] In the first adjustment stage: the motion system 12 can be used to drive at least one of the first support portion 11a and the second support portion 11b to move along the vertical direction Z, so as to drive the contact surface of the second support portion 11b to be located at a position separated from the second contact portion of the wafer 14, and drive the contact surface of the first support portion 11a to be located at a position in contact with the first contact portion of the wafer 14, so as to support the second contact portion of the wafer 14 to be located above the wafer processing liquid 13, as shown in FIG. Figure 8 shown.

[0090] In the second descending stage: the motion system 12 can be used to drive the first support part 11a to descend along the vertical direction Z, so that the second contact part of the wafer 14 enters the wafer processing liquid 13 in a state separated from the contact surface of the second support part 11b, as shown in FIG. Fig. 9 shown.

[0091] In this embodiment, the first support part 11a and the second support part 11b are driven to move respectively by the action system 12, so that the first contact part and the second contact part of the wafer 14 enter the wafer processing liquid 13 successively in a contactless manner, thereby improving the situation where defects on the crystal surface are easily generated due to small bubbles formed due to the different materials of the wafer 14 and the support part, and also improving the situation where the contact position cannot be fully cleaned or wet-etched due to the contact between the wafer 14 and the support part.

[0092] Optionally, before entering the first descending stage, if the contact surface of the first supporting portion 11a is in contact with the first contact portion of the wafer 14, the process of the wafer 14 entering the wafer processing liquid 13 also includes: an initial adjustment stage, wherein in the initial adjustment stage: the motion system 12 can be used to drive at least one of the first supporting portion 11a and the second supporting portion 11b to move along the vertical direction Z, so that the contact surface of the first supporting portion 11a is in a position separated from the first contact portion of the wafer 14, and the second supporting portion 11b supports the wafer 14 to be located above the wafer processing liquid 13, such as Figure 6 shown.

[0093] For example, in the initial adjustment stage: the step of using the motion system 12 to drive at least one of the first support part 11a and the second support part 11b to move along the vertical direction Z may specifically include: using the motion system 12 to drive the contact surface of the first support part 11a to descend along the vertical direction Z to a position separated from the first contact part of the wafer 14, and keeping the second support part 11b in place, so that the second support part 11b supports the wafer 14 to be located above the wafer processing liquid 13. This design can simplify the drive design of the motion system 12 in the initial adjustment stage, and at the same time, it can also shorten the descending distance of the subsequent wafer 14 when entering the wafer processing liquid 13. However, it is not limited to this, in the initial adjustment stage: the action system 12 can also be used to drive the first support part 11a and the second support part 11b to descend simultaneously along the vertical direction Z, and the descending speed of the first support part 11a is greater than the descending speed of the second support part 11b, so that the contact surface of the first support part 11a descends to a position separated from the first contact part of the wafer 14, and the second support part 11b supports the wafer 14 to be located above the wafer processing liquid 13.

[0094] Optionally, in the present embodiment, the contact surface of the first support portion 11a descends along the vertical direction Z to a specific position separated from the first contact portion of the wafer 14: the topmost point of the first support portion 11a (for example: the topmost point of the constraint wall 111 away from the support rod 110) is 1mm to 2mm lower than the corresponding wafer edge (edge ​​of the wafer). In this way, the first contact portion of the subsequent wafer 14 can enter the wafer processing liquid 13 in a non-contact manner, and the first support portion 11a can be easily contacted with the first contact portion of the wafer 14 in the subsequent first adjustment stage to support the wafer 14.

[0095] For example, in the first descending stage: while the motion system 12 is used to drive the second support part 11b to descend along the vertical direction Z, the motion system 12 can also be used to drive the first support part 11a to descend along the vertical direction Z. This can reduce the risk of the first support part 11a interfering with the descent of the wafer 14 when the second support part 11b drives the wafer 14 to descend, thereby ensuring that the contact surface of the first support part 11a always remains in a non-contact state with the first contact part of the wafer 14 during the process of the first contact part of the wafer 14 entering the wafer processing liquid 13.

[0096] Furthermore, in the first descending stage: the motion system 12 is used to drive the first support part 11a and the second support part 11b to descend simultaneously and at a constant speed. This can ensure that the first contact part of the wafer 14 enters the wafer processing liquid 13 in a state separated from the contact surface of the first support part 11a, and at the same time, it can also reduce the driving difficulty of the motion system 12.

[0097] For example, in the first adjustment stage: the step of using the motion system 12 to drive at least one of the first support part 11a and the second support part 11b to move along the vertical direction Z includes: using the motion system 12 to drive the first support part 11a to descend at a first speed, and at the same time driving the second support part 11b to descend at a second speed greater than the first speed, so that the contact surface of the second support part 11b moves to a position separated from the second contact part of the wafer 14, and the contact surface of the first support part 11a moves to a position in contact with the first contact part of the wafer 14.

[0098] In this embodiment, by driving the first support part 11a and the second support part 11b to descend at different speeds so that the contact surface of the second support part 11b is separated from the second contact part of the wafer 14, and the contact surface of the first support part 11a is in contact with the first contact part of the wafer 14 at the same time, the work efficiency can be improved.

[0099] Optionally, in the present embodiment, the specific position at which the contact surface of the second support portion 11b drops to be separated from the second contact portion of the wafer 14 can be: the topmost point of the second support portion 11b (for example: the topmost point of the constraint wall 111 away from the support rod 110) is 1mm to 2mm lower than the corresponding wafer edge (edge ​​of the wafer). This can not only enable the subsequent second contact portion of the wafer 14 to enter the wafer processing liquid 13 in a contact-free manner, but also facilitate the contact surface of the second support portion 11b to quickly contact the second contact portion of the wafer 14 in the subsequent second adjustment stage, so as to achieve stable support for the wafer 14.

[0100] For example, in the second descending stage: while the motion system 12 is used to drive the first support part 11a to descend along the vertical direction Z, the motion system 12 is also used to drive the second support part 11b to descend along the vertical direction Z. This can reduce the risk of the second support part 11b interfering with the descent of the wafer 14 when the first support part 11a drives the wafer 14 to descend, thereby ensuring that the contact surface of the second support part 11b always remains in a non-contact state with the second contact part of the wafer 14 during the process of the second contact part of the wafer 14 entering the wafer processing liquid 13.

[0101] Furthermore, in the second descending stage: the motion system 12 is used to drive the first support part 11a and the second support part 11b to descend simultaneously and at a constant speed, so that the second contact part of the wafer 14 can enter the wafer processing liquid 13 in a state separated from the contact surface of the second support part 11b, and at the same time, the driving difficulty of the motion system 12 can be reduced.

[0102] In one embodiment of the present disclosure, the aforementioned process of the wafer 14 entering the wafer processing liquid 13 may also include: a second adjustment stage and a third descending stage which are located after the second descending stage and are performed in sequence. In the second adjustment stage: the motion system 12 is used to drive at least one of the first support portion 11a and the second support portion 11b to move along the vertical direction Z, so that the contact surface of the first support portion 11a is in contact with the first contact portion of the wafer 14, and the contact surface of the second support portion 11b is in contact with the second contact portion of the wafer 14, such as Fig.10 In the third descending stage: the motion system 12 drives the first support portion 11a and the second support portion 11b to descend at the same time and at the same speed, so that the wafer 14 supported on the first support portion 11a and the second support portion 11b completely enters the wafer processing liquid 13, as shown Fig.11 shown.

[0103] In this embodiment, the contact surfaces of the first support part 11a and the second support part 11b are first made to contact the wafer 14 by utilizing the second adjustment stage to support the wafer 14 at the same time. In this way, in the third descending stage, the wafer 14 can be kept stably supported on the first support part 11a and the second support part 11b to reduce the risk of shaking during the descent process.

[0104] It is understandable that the second adjustment stage and the third descending stage are both optional. In some embodiments, only a part of the support parts in the support group may be used to carry the wafer 14 to descend.

[0105] Optionally, in the second adjustment stage: the step of using the motion system 12 to drive at least one of the first support part 11a and the second support part 11b to move along the vertical direction Z may specifically include: using the motion system 12 to drive the first support part 11a to descend at a third speed, and at the same time drive the second support part 11b to descend at a fourth speed less than the third speed, so that the contact surface of the second support part 11b moves to a position in contact with the second contact part of the wafer 14, and the contact surface of the first support part 11a maintains a position in contact with the first contact part of the wafer 14.

[0106] In this embodiment, by driving the first support part 11a and the second support part 11b to descend at different speeds so that the second support part 11b contacts the second contact part of the wafer 14, the first support part 11a drives the wafer 14 to descend at the same time, thereby improving the working efficiency of the wafer 14 entering the wafer processing liquid 13.

[0107] For example, the speed range of the first speed, second speed, third speed and fourth speed mentioned above can be 10mm / sec to 350mm / sec, such as: the first speed, the second speed, the third speed and the fourth speed can be 10mm / sec, 50mm / sec, 100mm / sec, 150mm / sec, 200mm / sec, 250mm / sec, 300mm / sec, 350mm / sec, etc., so as to increase the entry speed of the wafer 14 while avoiding the situation where the descent speed is too fast and the support of the wafer 14 is unstable.

[0108] In a specific embodiment of the present disclosure, after the wafer 14 completely enters the wafer processing liquid 13, the wafer processing method may further include: executing a processing stage, wherein the processing stage may include a first processing stage and a second processing stage performed sequentially.

[0109] In the first processing stage: the motion system 12 is used to drive at least one of the first support part 11a and the second support part 11b to move along the vertical direction Z, so that one of the first support part 11a and the second support part 11b alone supports the wafer 14 completely in the wafer processing liquid 13, and the other is in a position separated from the wafer 14; in the second processing stage: the motion system 12 is used to drive at least one of the first support part 11a and the second support part 11b to move along the vertical direction Z, so that the other supports the wafer 14 completely in the wafer processing liquid 13, and the contact surface of one is in a position separated from the wafer 14. In an optional embodiment, the first processing stage is as follows Fig.12 As shown, the second processing stage is Fig.13 It is understood that, in another embodiment, the first processing stage is as follows Fig.13 As shown, the second processing stage is Fig.12 shown.

[0110] In this embodiment, by utilizing the first processing stage and the second processing stage, the first support part 11a and the second support part 11b sequentially support the wafer 14 in the wafer processing stage, so that the first contact part and the second contact part of the wafer 14 can alternately fully contact the wafer processing liquid 13 in the form of no contact point, and then the situation that the contact position cannot be fully cleaned or wet-etched due to the narrow space at the contact point between the wafer 14 and the support part can be further improved, that is, the situation that the position where the wafer 14 contacts the support part is not easy to be fully cleaned or wet-etched can be improved. In one embodiment, a sufficient contact cycle with the wafer processing liquid 13 can be formed by repeating the alternating support action.

[0111] In this embodiment, the phase separation position can be that the topmost point of the support part (for example: the topmost point of the constraint wall 111 away from the support rod 110) is 1mm to 2mm lower than the corresponding crystal edge (edge ​​of the wafer). In this way, the contact part of the wafer 14 can be fully in contact with the wafer processing liquid 13 in a non-contact manner, and the rapid alternation of the first processing stage and the second processing stage can be achieved.

[0112] Optionally, in the second processing stage: the step of using the motion system 12 to drive at least one of the first support part 11a and the second support part 11b to move in the vertical direction includes: using the motion system 12 to drive the contact surface of the other one to rise in the vertical direction Z to a position in contact with the wafer 14, and using the motion system 12 to drive the contact surface of one one to descend in the vertical direction Z to a position separated from the wafer 14, so as to improve the efficiency of the first contact part and the second contact part of the wafer 14 being alternately treated by the wafer processing liquid 13.

[0113] Furthermore, in the second processing stage: the motion system 12 is first used to drive the second one to rise to a position in contact with the wafer 14, and then the motion system 12 is used to drive the first one to descend to a position separated from the wafer 14. In this way, while achieving alternating processing, the support stability of the wafer 14 can also be guaranteed.

[0114] For example, the first processing stage and the second processing stage mentioned above are both set multiple times and performed alternately.

[0115] It should be noted that in each stage of the wafer processing method mentioned in the present disclosure, the positional relationship between the support part, wafer processing liquid, and wafer can be detected by sensors. When the positional relationship meets the requirements of the corresponding stage, the action system is used to drive the support part to perform coordinated actions, but it is not limited to this. Each stage can also be implemented in sequence by setting a set of fixed programs.

[0116] In this embodiment, the terms "first", "second", "third", "fourth", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", "third", "fourth" may explicitly or implicitly include one or more of the feature. In the description of this application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0117] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0118] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. A wafer processing device, characterized in that: include: A processing tank for containing a wafer processing liquid; A support group, comprising a plurality of support parts, capable of independently or jointly supporting a wafer in an upright state, wherein the support parts have a contact surface that contacts the wafer when supporting the wafer; The action system is connected to the plurality of supporting parts respectively, and is used to drive the plurality of supporting parts to move in coordination with each other, wherein: At least one contact surface of the support portion can be in contact with the wafer under the drive of the action system; The contact surface of at least one of the supporting parts can be in a state of being separated from the wafer in an area where the contact surface intersects with the liquid surface during the process in which the action system drives the supporting part to enter the wafer processing liquid.

2. The wafer processing device according to claim 1, characterized in that: The plurality of support parts include a first support part and second support parts provided on opposite sides of the first support part, wherein the level of the second support part is configured to be higher than the level of the first support part when the first support part and the second support part jointly support the wafer, wherein: The contact surface of the first support portion, in an area intersecting with the liquid surface during the process of the action system driving the first support portion to enter the wafer processing liquid, can be in a state of being separated from the wafer, and the contact surface of the second support portion can be in a state of being in contact with the wafer under the drive of the action system; The contact surface of the second support part can be in a state of being separated from the wafer in the area intersecting with the liquid surface when the action system drives it into the wafer processing liquid, and the contact surface of the first support part can be in a state of being in contact with the wafer under the drive of the action system.

3. The wafer processing device according to claim 2, characterized in that: The action system includes: Driving mechanism; a first lifting mechanism connected to the driving mechanism and the first supporting portion, the first lifting mechanism being used to drive the first supporting portion to move in a vertical direction under the drive of the driving mechanism; The second lifting mechanism is connected to the driving mechanism and all the second supporting parts, and the second lifting mechanism is used for driving all the second supporting parts to move synchronously along the vertical direction under the drive of the driving mechanism.

4. The wafer processing device according to claim 3, characterized in that: The action system also includes: The horizontal moving mechanism is connected to the driving mechanism, the first lifting mechanism and the second lifting mechanism. The horizontal moving mechanism can drive the first lifting mechanism, the first supporting part, the second lifting mechanism and the second supporting part to move horizontally in the horizontal direction under the drive of the driving mechanism.

5. The wafer processing device according to claim 2, characterized in that: Two second supporting parts are provided and are located at the same level.

6. The wafer processing device according to claim 1, characterized in that: The support portion comprises: Support rods; A plurality of constraint walls are formed on the top of the support rod and are arranged at intervals along the extension direction of the support rod; Wherein, a constraint groove is formed between two adjacent constraint walls and the support rod, and the constraint groove is used for inserting the wafer.

7. The wafer processing device according to claim 6, characterized in that: The support portion further includes a buffer layer wrapping the constraint wall, and the hardness of the buffer layer is less than the hardness of the constraint wall.

8. The wafer processing device according to any one of claims 1 to 7, characterized in that: Also includes: An overflow recovery tank, wherein the processing tank is arranged in the overflow recovery tank, and an inner tank wall of the overflow recovery tank is spaced apart from an outer tank wall of the processing tank, and is used to recover wafer processing liquid overflowing from the processing tank; The liquid supply system includes a liquid supply tank, a liquid supply pipeline and a liquid supply pump connected to the liquid supply pipeline, one end of the liquid supply pipeline is connected to the processing tank, and the other end is connected to the liquid supply tank. The liquid supply tank is used to store wafer processing liquid, and the liquid supply pump is used to pump the wafer processing liquid in the liquid supply tank into the processing tank through the liquid supply pipeline.

9. The wafer processing device according to claim 8, characterized in that: Also included is a liquid return system, the liquid return system comprising: A concentration detector, disposed in the overflow recovery tank, for detecting concentration information of the wafer processing liquid in the overflow recovery tank; A liquid return pipeline, one end of which is connected to the overflow recovery tank, and the other end of which is connected to the liquid supply tank; A liquid return pump is connected to the liquid return pipeline and the concentration detector. The liquid return pump is used to pump the wafer processing liquid recovered in the overflow recovery tank into the liquid supply tank through the liquid return pipeline when the concentration information detected by the concentration detector meets the target concentration range.

10. The wafer processing device according to claim 9, characterized in that: The liquid return system also includes: A feeder is connected to the concentration detector, and is used to add corresponding materials to the overflow recovery tank when the concentration information detected by the concentration detector does not meet the target concentration range, and is used to stop adding corresponding materials to the overflow recovery tank when the concentration information detected by the concentration detector meets the target concentration range.

11. A wafer processing method, characterized in that: include: adding wafer processing fluid into the processing tank; Using a support group to support the wafer in an upright state, the support group includes a plurality of support parts respectively connected to the action system, the plurality of support parts can independently or jointly support the wafer, and the support parts have a contact surface that contacts the wafer when supporting the wafer; The motion system is used to drive the multiple supporting parts to move in coordination with each other, so as to drive the wafer to enter the wafer processing liquid, wherein, during the process of the wafer entering the wafer processing liquid: A contact surface of at least one of the support parts is in contact with the wafer under the drive of the action system; The contact surface of at least one of the supporting parts is in a state of being separated from the wafer in an area where the contact surface intersects with the liquid surface during the process in which the action system drives the supporting part to enter the wafer processing liquid.

12. The wafer processing method according to claim 11, characterized in that: At least two of the support parts are configured to be at different horizontal heights when jointly supporting the wafer, and the contact surface of each support part that intersects with the liquid surface during the process of the action system driving it into the wafer processing liquid is in a state separated from the wafer.

13. The wafer processing method according to claim 12, characterized in that: The plurality of support parts include a first support part and second support parts provided on opposite sides of the first support part, wherein the level of the second support part is configured to be higher than the level of the first support part when the first support part and the second support part jointly support the wafer, wherein the process of the wafer entering the wafer processing liquid includes: After confirming that the contact surface of the first supporting portion is at a position separated from the wafer, a first descending stage, a first adjusting stage, and a second descending stage are sequentially performed, wherein: In the first descending stage: the second supporting part is driven to descend in the vertical direction by the motion system, so as to drive the first contact part of the wafer to enter the wafer processing liquid in a state of being separated from the contact surface of the first supporting part, and the second contact part of the wafer is located above the wafer processing liquid, the first contact part is the part of the wafer used to contact with the contact surface of the first supporting part, and the second contact part is the part of the wafer used to contact with the contact surface of the second supporting part; In the first adjustment stage: using the motion system to drive at least one of the first supporting part and the second supporting part to move in the vertical direction, so as to drive the contact surface of the second supporting part to be in a position separated from the second contact part of the wafer, and drive the contact surface of the first supporting part to be in a position in contact with the first contact part of the wafer, so as to support the second contact part of the wafer to be located above the wafer processing liquid; In the second descending stage: the action system is used to drive the first support part to descend in the vertical direction, so as to drive the second contact part of the wafer to enter the wafer processing liquid in a state separated from the contact surface of the second support part.

14. The wafer processing method according to claim 13, characterized in that: Before entering the first descending stage, if the contact surface of the first supporting portion is in contact with the first contact portion of the wafer, the process of the wafer entering the wafer processing liquid further includes: an initial adjustment stage, wherein: In the initial adjustment stage: the motion system is used to drive at least one of the first support part and the second support part to move in the vertical direction, so that the contact surface of the first support part is in a position separated from the first contact part of the wafer, and the second support part supports the wafer above the wafer processing liquid.

15. The wafer processing method according to claim 14, characterized in that: The step of using the motion system to drive at least one of the first support portion and the second support portion to move in a vertical direction during the initial adjustment stage includes: Using the motion system to drive the contact surface of the first support portion to descend in a vertical direction to a position separated from the first contact portion of the wafer, and keeping the second support portion in place, so that the second support portion supports the wafer above the wafer processing liquid; or The motion system is used to drive the first support part and the second support part to descend in the vertical direction at the same time, and the descending speed of the first support part is greater than the descending speed of the second support part, so that the contact surface of the first support part descends to a position separated from the first contact part of the wafer, and the second support part supports the wafer to be located above the wafer processing liquid.

16. The wafer processing method according to claim 13, characterized in that: In the first descending stage and / or in the second descending stage: while the second support part is driven to descend in the vertical direction by the motion system, the first support part is also driven to descend in the vertical direction by the motion system.

17. The wafer processing method according to claim 16, characterized in that: In the first descending stage and in the second descending stage: the motion system is used to drive the first supporting part and the second supporting part to descend simultaneously and at a constant speed.

18. The wafer processing method according to claim 13, characterized in that: The step of using the motion system to drive at least one of the first supporting part and the second supporting part to move in the first adjustment stage includes: The motion system is used to drive the first support part to descend at a first speed, and at the same time drive the second support part to descend at a second speed greater than the first speed, so that the contact surface of the second support part moves to a position separated from the second contact part of the wafer, and the contact surface of the first support part moves to a position in contact with the first contact part of the wafer.

19. The wafer processing method according to claim 13, characterized in that: The process of the wafer entering the wafer processing liquid further includes: a second adjustment stage and a third descending stage which are located after the second descending stage and are performed in sequence, wherein: In the second adjustment stage: using the motion system to drive at least one of the first support portion and the second support portion to move in the vertical direction, so that the contact surface of the first support portion is in contact with the first contact portion of the wafer, and the contact surface of the second support portion is in contact with the second contact portion of the wafer; In the third descending stage: the motion system is used to drive the first supporting part and the second supporting part to descend simultaneously and at a constant speed, so that the wafers supported on the first supporting part and the second supporting part completely enter the wafer processing liquid.

20. The wafer processing method according to claim 19, characterized in that: The step of using the motion system to drive at least one of the first support portion and the second support portion to move in a vertical direction in the second adjustment stage includes: The motion system is used to drive the first support part to descend at a third speed, and at the same time drive the second support part to descend at a fourth speed which is less than the third speed, so that the contact surface of the second support part moves to a position in contact with the second contact part of the wafer, and the first support part maintains a position in contact with the first contact part of the wafer.

21. The wafer processing method according to claim 13, characterized in that: After the wafer completely enters the wafer processing liquid, the wafer processing method further includes: Execute a processing stage, wherein the processing stage includes a first processing stage and a second processing stage performed sequentially, wherein: In the first processing stage: using the motion system to drive at least one of the first support part and the second support part to move in the vertical direction, so that one of the first support part and the second support part alone supports the wafer completely in the wafer processing liquid, and the contact surface of the other one is in a position separated from the wafer; In the second processing stage: the motion system is used to drive at least one of the first support part and the second support part to move in the vertical direction, so that the other supporting wafer is completely located in the wafer processing liquid, and the contact surface of one is in a position separated from the wafer.

22. The wafer processing method according to claim 21, characterized in that: The first processing stage and the second processing stage are both provided multiple times; and / or The step of using the motion system to drive at least one of the first support part and the second support part to move in the vertical direction in the second processing stage includes: using the motion system to drive the contact surface of the other one to rise in the vertical direction to a position in contact with the wafer, and using the motion system to drive the contact surface of one of the first support part to descend in the vertical direction to a position separated from the wafer.

23. The wafer processing method according to any one of claims 11 to 22, characterized in that: The step of adding wafer processing liquid into the processing tank comprises: After determining that the processing tank is placed in the overflow recovery tank, a wafer processing liquid is added into the processing tank using a liquid supply system, so that the wafer processing liquid in the processing tank is in an overflow state at least during the processing stage of the wafer.

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