A method, device, equipment and medium for adjusting the frequency of a filter

Abstract

The present invention discloses a frequency adjustment method, device, equipment and medium for a filter, the frequency adjustment method for the filter comprising: obtaining target position information of multiple target filters in a target wafer; multiple target filters all include a target frequency modulation layer, and the thickness of the target frequency modulation layer of each target filter is equal; determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter; determining the etching time corresponding to each target filter according to the target position information and the etching thickness; etching the target frequency modulation layer corresponding to each target filter using an ion beam according to the target position information and the etching time. The above technical means can ensure that the frequency values ​​of multiple target filters in a target wafer are the same, thereby improving the yield and production efficiency of the target wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of filters, and in particular to a frequency adjustment method, device, equipment and medium for a filter. Background Art

[0002] Surface acoustic wave filters are used in electronic systems of weapons and equipment such as radar and communications, and are key components of the system. As the system puts forward requirements for higher precision and higher frequency, higher requirements are also placed on surface acoustic wave filters.

[0003] During the manufacturing process, the surface acoustic wave filter will have frequency deviation due to the uniformity of materials, consistency of process and flatness of wafer. Frequency deviation will occur between wafers in a batch, between batches, and even on a single wafer, which will reduce the product yield. Summary of the invention

[0004] The present invention provides a filter frequency adjustment method, device, equipment and medium to achieve the same frequency values ​​of multiple target filters in a target wafer, thereby improving the yield and production efficiency of the target wafer.

[0005] In a first aspect, an embodiment of the present invention provides a frequency adjustment method for a filter, comprising:

[0006] Acquire target position information of a plurality of target filters in a target wafer; the plurality of target filters all include a target frequency modulation layer, and the thickness of the target frequency modulation layer of each target filter is equal;

[0007] Determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter;

[0008] Determine the etching time corresponding to each of the target filters according to the target position information and the etching thickness;

[0009] The target frequency modulation layer corresponding to each target filter is etched using ion beam according to the target position information and the etching time.

[0010] Optionally, determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter includes:

[0011] Acquire a target correspondence between frequencies of a plurality of initial filters in an initial wafer and frequency modulation layers of a plurality of the initial filters;

[0012] The etching thickness of the target frequency modulation layer corresponding to each target filter is determined according to the target corresponding relationship and at least two preset frequencies of each target filter.

[0013] Optionally, obtaining a target correspondence between frequencies of a plurality of initial filters in an initial wafer and frequency modulation layers of a plurality of the initial filters includes:

[0014] obtaining initial frequencies of a plurality of initial filters in an initial wafer;

[0015] Etching the frequency modulation layers of the plurality of initial filters according to a preset frequency modulation layer removal thickness, and obtaining the trimmed frequencies of the plurality of initial filters after etching;

[0016] A target corresponding relationship is obtained according to the initial frequency, the trimmed frequency and the preset frequency modulation layer removal thickness.

[0017] Optionally, etching the frequency modulation layers of the plurality of initial filters according to a preset frequency modulation layer removal thickness includes:

[0018] The initial wafer is divided into N initial wafer sections along a first direction; each of the initial wafer sections includes a plurality of the initial filters; the first direction is parallel to a first coordinate axis of the trimming machine and intersects with a second coordinate axis of the trimming machine; along a direction from the first initial wafer section to the Nth initial wafer section, the preset frequency modulation layer removal thickness corresponding to each of the wafer sections increases in sequence; wherein N≥2, and N is an integer;

[0019] The frequency modulation layer of each of the initial wafer divisions is etched according to the preset frequency modulation layer removal thickness corresponding to each of the initial wafer divisions.

[0020] Optionally, determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to the target corresponding relationship and at least two preset frequencies of each target filter includes:

[0021] Determine the etching thickness range of the target frequency modulation layer corresponding to each of the target filters according to the target corresponding relationship, the preset frequency and the specification frequency range corresponding to the preset frequency;

[0022] The etching thickness of the target frequency modulation layer corresponding to each of the etching thickness range filters is determined according to the average value of the etching thickness range.

[0023] Optionally, target position information of multiple target filters in a target wafer is obtained, including:

[0024] Acquire actual position information of multiple target filters in a target wafer;

[0025] The target position information corresponding to each of the target filters is determined according to the actual position information and size information of each of the target filters and the size information of the target wafer.

[0026] Optionally, determining an etching time corresponding to each of the target filters according to the target position information and the etching thickness includes:

[0027] Determine a first topological structure of the target wafer according to the target position information and the etching thickness; the first topological structure includes the target position information and the etching thickness of a portion of the target filter in the target wafer;

[0028] The first topological structure is converted into a second topological structure by using an interpolation method; the second topological structure includes target position information and etching thickness of all the target filters in the target wafer;

[0029] The etching time corresponding to each of the target filters is determined according to the second topological structure.

[0030] In a second aspect, an embodiment of the present invention further provides a frequency adjustment device for a filter, comprising:

[0031] A target position information acquisition module is used to acquire target position information of multiple target filters in a target wafer; the multiple target filters all include a target frequency modulation layer, and the thickness of the target frequency modulation layer of each target filter is equal;

[0032] A module for determining the etching thickness of a target frequency modulation layer, used for determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter;

[0033] An etching time determination module, used to determine the etching time corresponding to each of the target filters according to the target position information and the etching thickness;

[0034] The frequency adjustment module is used to etch the target frequency adjustment layer corresponding to each target filter by using ion beam according to the target position information and the etching time.

[0035] In a third aspect, an embodiment of the present invention further provides a computer device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the frequency adjustment method of the filter as described in any one of the first aspects is implemented.

[0036] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the frequency adjustment method for the filter as described in any one of the first aspects.

[0037] The technical solution provided by the embodiment of the present invention is that the target wafer includes multiple target filters, and the thickness of the target frequency modulation layer on the upper surface of each target filter is the same. By etching the target frequency modulation layer with an ion beam, the thickness of the target frequency modulation layer will change, and then the frequency of the target filter will change. The embodiment of the present invention determines the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter; determines the etching time corresponding to each target filter according to the target position information and the etching thickness; and uses ion beam etching to etch the target frequency modulation layer corresponding to each target filter according to the target position information and the etching time. In this way, the frequencies of all target filters in the target wafer can be ensured to be the same, thereby improving the yield and production efficiency of the target wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic flow chart of a first frequency adjustment method for a filter provided by an embodiment of the present invention;

[0039] Figure 2 A schematic diagram of the structure of a target wafer provided by an embodiment of the present invention;

[0040] Figure 3 A schematic cross-sectional structure diagram of a target filter provided by an embodiment of the present invention;

[0041] Figure 4 A schematic diagram of insertion loss of a target filter provided by an embodiment of the present invention;

[0042] Figure 5 for Figure 4 A schematic diagram comparing the corresponding target filter frequency before and after frequency adjustment;

[0043] Figure 6 A schematic flow chart of a frequency adjustment method for a second filter provided by an embodiment of the present invention;

[0044] Figure 7 A schematic structural diagram of an initial wafer provided by an embodiment of the present invention;

[0045] Figure 8 A schematic flow chart of a third method for adjusting the frequency of a filter provided by an embodiment of the present invention;

[0046] Fig. 9 A fitting curve between the frequency of the initial wafer and the thickness of the preset frequency modulation layer removed provided in an embodiment of the present invention;

[0047] Fig.10 for Figure 4 Schematic diagram of etching thickness range of target frequency modulation layer of corresponding target filter;

[0048] Fig.11A schematic flow chart of a fourth filter frequency adjustment method provided by an embodiment of the present invention;

[0049] Fig.12 A schematic diagram of actual coordinates of a target wafer provided by an embodiment of the present invention;

[0050] Fig.13 A schematic diagram of a first topological structure of a target wafer provided by an embodiment of the present invention;

[0051] Fig.14 A second topological structure schematic diagram of a target wafer is provided for an embodiment of the present invention;

[0052] Fig.15 The etching rate of the ion beam on the target wafer provided by the embodiment of the present invention is a three-dimensional normal distribution graph;

[0053] Fig.16 A schematic diagram of the motion trajectory of an ion beam on a target wafer provided by an embodiment of the present invention;

[0054] Fig.17 A schematic diagram of the structure of a frequency adjustment device for a filter provided by an embodiment of the present invention;

[0055] Fig.18 The present invention is a schematic diagram of the structure of a computer device used in a frequency adjustment method for a filter according to an embodiment of the present invention. DETAILED DESCRIPTION

[0056] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0057] It should be noted that the terms "including" and "having" and any variations thereof in the specification and claims of the present invention and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or apparatus.

[0058] Figure 1The present invention provides a flowchart of a first filter frequency adjustment method. This embodiment can be applied to the case where filter frequency adjustment is required to improve the yield and production efficiency of the target wafer. The method can be performed by a filter frequency adjustment device. The filter frequency adjustment device can be implemented in the form of hardware and / or software. The filter frequency adjustment device can be configured in a computer device, for example, it can be installed on a desktop computer or a workbench. Figure 1 As shown, the method includes:

[0059] S101, obtaining target position information of multiple target filters in a target wafer.

[0060] Wherein, the multiple target filters all include a target frequency modulation layer, and the thickness of the target frequency modulation layer of each target filter is equal.

[0061] Specifically, Figure 2 A schematic diagram of the structure of a target wafer provided by an embodiment of the present invention is shown in FIG. Figure 2 As shown, the target wafer 10 includes a plurality of target filters 101 , and the plurality of target filters 101 may be arranged in an array. Figure 3 A cross-sectional structural diagram of a target filter provided by an embodiment of the present invention is shown in FIG. Figure 3 As shown, the target filter 101 may be a surface acoustic wave filter, and the target filter 101 may include a stacked piezoelectric substrate 1011, an interdigital electrode transducer 1012, and a target frequency modulation layer 1013. Specifically, the interdigital transducer 1012 includes interdigital electrodes and a bus bar, and when an AC signal of a certain frequency is applied to the bus bar, a surface acoustic wave can be generated in the surface acoustic wave filter.

[0062] Specifically, by adjusting the thickness of the target frequency modulation layer 1013, the mass load on the piezoelectric substrate 1011 can be changed, thereby adjusting the frequency of the surface acoustic wave filter. It can be understood that the thickness of the target frequency modulation layer 1013 is inversely proportional to the frequency of the target filter, that is, the greater the thickness of the target frequency modulation layer 1013, the lower the frequency of the target filter, and the smaller the thickness of the target frequency modulation layer 1013, the higher the frequency of the target filter.

[0063] It should be noted that, due to the instability of the raw materials and process technology of each target filter, the frequency of each target filter will be different, and then by etching the target frequency modulation layer corresponding to each target filter with different thicknesses, it can be ensured that the frequency values ​​of each target filter after etching are the same. Exemplarily, the target frequency modulation layer 1013 can be a passivation layer, and the frequency of the filter can be adjusted by etching the thickness of the passivation layer.

[0064] Specifically, the target frequency modulation layers 1013 of the multiple target filters 101 in the target wafer 10 can be arranged as a whole and have equal thicknesses. The initial thickness of the target frequency modulation layer before etching can be thicker to facilitate subsequent etching of the target frequency modulation layer 1013.

[0065] Specifically, the target wafer is placed on the trimming machine, and the center of the target wafer is located at a point in the trimming machine coordinates, so that the target position information of each target filter in the target wafer can be obtained.

[0066] For example, continue to refer to Figure 2 , randomly select a target filter P in the target wafer, and the target position information of the target filter P can be (Xa, Ya), where Xa is the horizontal coordinate of the target filter on the X-axis, and Ya is the vertical coordinate of the target filter on the Y-axis.

[0067] S102 , determining an etching thickness of a target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter.

[0068] Specifically, the target filter P is a dual-bandpass surface acoustic wave filter. Figure 4 A schematic diagram of insertion loss of a target filter provided by an embodiment of the present invention is shown in FIG. Figure 4 As shown, the four side frequencies of the two passbands of the target filter can be selected, namely, f 0 1. f 0 2. f 0 3 and f 0 4 as the preset frequency.

[0069] Specifically, the adjustment equation of the target wafer is: , where a and b are constants, ΔPSN is the thickness of the target frequency modulation layer to be etched, and f is determined according to the trimming equation 0 1. f 0 2. f 0 3 and f 0 4 The corresponding adjustment equations are , , and , from which we can get , , , . Among them, Δf1 is f 0 The qualified frequency of 1 is related to f 0 The difference of 1, f 0 The qualified frequency of 1 can be a range of spec1, f 01 In this qualified frequency range, the filter frequency requirements are met, so Δf1 can be the maximum value in the qualified frequency range spec1 and f 0 The difference of 1, that is, spec1_max-f 0 1, or Δf1 can be the minimum value in the qualified frequency range spec1 and f 0 The difference of 1, that is, spec1_min-f 0 1. According to the above formula, we can get f 0 1 corresponding to ΔPSN1_max and ΔPSN1_min, f 0 2 corresponding to ΔPSN2_max and ΔPSN2_min, f 0 3 corresponding to ΔPSN3_max and ΔPSN3_min, f 0 4 corresponds to ΔPSN4_max and ΔPSN4_min. According to the intersection [ΔPSN_min, ΔPSN_max] of [ΔPSN1_min, ΔPSN1_max], [ΔPSN2_min, ΔPSN2_max], [ΔPSN3_min, ΔPSN3_max] and [ΔPSN4_min, ΔPSN4_max], the etching thickness range of the target frequency modulation layer corresponding to the target filter P can be determined. It can be understood that in order to ensure the accuracy of etching the thickness of the target frequency modulation layer, the etching thickness of the target frequency modulation layer of the target filter P can be determined as .

[0070] Exemplarily, when the initial thickness of the target frequency modulation layer is 30 nm and ΔPSN(Xa, Ya)=18 nm, the thickness of the target frequency modulation layer remaining after etching is 12 nm.

[0071] It should be noted that the above embodiment takes a target filter P as an example. According to the above method, the etching thickness of the target frequency modulation layer corresponding to each target filter in the target wafer can be determined.

[0072] S103 , determining the etching time corresponding to each target filter according to the target position information and the etching thickness.

[0073] , where t is the residence time of the ion beam on the target filter P, R is the etching rate, and (Xa, Ya) is the current position of the ion beam in the target wafer. The above formula can be understood as the etching thickness of the target frequency modulation layer corresponding to the target filter P is equal to the convolution of the residence time function and the ion beam etching rate function. This formula can be understood as the superposition sum of the etching amount of the ion beam at a specific position (Xa, Ya) during the entire working process. Since ΔPSN(Xa, Ya) and R are known, the residence time t of the ion beam on the target filter P can be determined, so the residence time of the ion beam at (Xa, Ya) can be determined to be t, so the etching time corresponding to each target filter in the target wafer can be determined.

[0074] S104, etching the target frequency modulation layer corresponding to each target filter by using an ion beam according to the target position information and the etching time.

[0075] Specifically, the ion beam etches the target frequency modulation layer corresponding to each target filter according to the target position information and etching time to achieve different etching amounts, so that the final frequency of each target filter remains consistent, thereby ensuring that the frequency values ​​of multiple target filters in the target wafer are the same, thereby improving the yield and production efficiency of the target wafer.

[0076] Specifically, Figure 5 for Figure 4 The corresponding comparison diagram of the target filter before and after frequency adjustment is as follows: Figure 5 As shown, the black solid line represents the f before adjustment. 0 1, the black dotted line represents the change trend of f1 after adjustment, the frequency f1 after adjustment is within the qualified frequency [spec1_min, spec1_max], and the frequency f1 before adjustment is within the qualified frequency [spec1_min, spec1_max]. 0 The frequency standard deviation corresponding to f1 is 3.194, and the frequency standard deviation corresponding to f1 after adjustment is 1.258. It can be seen that the standard deviation of f1 after adjustment is much better than that of f1 before adjustment. 0 The standard deviation of 1 can be reduced, and the wafer yield after frequency adjustment can be significantly improved.

[0077] The frequency tuning method of the filter provided in the embodiment of the present invention determines the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter; determines the etching time corresponding to each target filter according to the target position information and the etching thickness; and uses ion beam etching to etch the target frequency modulation layer corresponding to each target filter according to the target position information and the etching time, thereby ensuring that the frequencies of all target filters in the target wafer are the same, thereby improving the yield and production efficiency of the target wafer.

[0078] Optional, Figure 6A flow chart of a second filter frequency adjustment method provided by an embodiment of the present invention, Figure 6 Based on the above embodiments, the operation of determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter is described in detail. Figure 6 As shown, the frequency adjustment method includes:

[0079] S201, obtaining target position information of multiple target filters in a target wafer.

[0080] S202, obtaining a target correspondence between the frequencies of a plurality of initial filters in an initial wafer and the frequency modulation layers of the plurality of initial filters.

[0081] Specifically, Figure 7 A schematic diagram of the structure of an initial wafer provided by an embodiment of the present invention is shown in FIG. Figure 7 As shown, the initial wafer 20 includes multiple initial filters 201. The initial wafer and the target wafer can be wafers of the same type, so the initial wafer can be used as a standard, and the tuning equation of the target wafer can be obtained through the target correspondence between the frequencies of the multiple initial filters and the frequency modulation layers of the multiple initial filters.

[0082] It should be noted that the frequency of the initial filter can be understood as the difference between the frequency after the initial etching of the frequency modulation layer of each initial filter and the frequency before etching, that is, the frequency change value Δf. The frequency modulation layer of the initial filter can be understood as the difference between the thickness of the frequency modulation layer after the initial etching of the frequency modulation layer of each initial filter and the thickness of the frequency modulation layer before etching, that is, the frequency modulation layer thickness change value ΔPSN. In this way, linear fitting of the frequencies of multiple initial filters and the frequency modulation layers of multiple initial filters can obtain the target corresponding relationship between the frequency modulation layer thickness change value ΔPSN and the frequency change value Δf of the initial wafer, that is, Since the initial wafer and the target wafer may be wafers of the same type, the target correspondence relationship between the initial wafer and the target wafer is the same.

[0083] S203 , determining an etching thickness of a target frequency modulation layer corresponding to each target filter according to the target corresponding relationship and at least two preset frequencies of each target filter.

[0084] For details, please refer to Figure 4 , taking the target filter P as a dual-bandpass surface acoustic wave filter as an example, f 0 1. f 0 2. f 0 3 and f 0 4 is used as the preset frequency of the target filter P. Thus, according to the target correspondence and the preset frequency, the etching thickness corresponding to each preset frequency can be determined. By calculating f0 1. f 0 2. f 0 3 and f 0 4 can determine the etching thickness of the target frequency modulation layer corresponding to the target filter P, and then the etching thickness of the target frequency modulation layer corresponding to each target filter can be obtained.

[0085] S204: Determine the etching time corresponding to each target filter according to the target position information and the etching thickness.

[0086] S205 , etching the target frequency modulation layer corresponding to each target filter by using an ion beam according to the target position information and the etching time.

[0087] The frequency tuning method of the filter provided in the embodiment of the present invention obtains the target correspondence between the frequencies of multiple initial filters in the initial wafer and the frequency modulation layers of the multiple initial filters; the etching thickness of the target frequency modulation layer corresponding to each target filter is determined according to the target correspondence and at least two preset frequencies of each target filter, thereby improving the etching accuracy of the target frequency modulation layer corresponding to the target filter, which is beneficial to ensure the accuracy of the etching results.

[0088] Optional, Figure 8 A schematic diagram of a flow chart of a third filter frequency adjustment method provided by an embodiment of the present invention, Figure 8 Based on the above embodiments, the operations of obtaining the target correspondence between the frequencies of the multiple initial filters in the initial wafer and the frequency modulation layers of the multiple initial filters and etching the frequency modulation layers of the multiple initial filters according to the preset frequency modulation layer removal thickness are described in detail. Figure 8 As shown, the frequency adjustment method includes:

[0089] S301, obtaining target position information of multiple target filters in a target wafer.

[0090] S302 , obtaining initial frequencies of a plurality of initial filters in an initial wafer.

[0091] Specifically, the initial frequencies of the multiple initial filters can be understood as the frequencies of the multiple initial filters when the frequency modulation layers corresponding to the multiple initial filters are not etched, that is, the frequencies obtained by detecting the multiple initial filters using a probe before etching the frequency modulation layers corresponding to each initial filter.

[0092] S303, dividing the initial wafer into N initial wafer sections along a first direction; each initial wafer section includes a plurality of initial filters; the first direction is parallel to a first coordinate axis of the trimming machine and intersects with a second coordinate axis of the trimming machine. Along a direction from the first initial wafer section to the Nth initial wafer section, the preset frequency modulation layer removal thickness corresponding to each wafer section increases in sequence.

[0093] Wherein, N≥2, and N is an integer.

[0094] For details, please refer to Figure 7 The initial wafer 20 includes a plurality of initial filters 201. The initial wafer 20 is arranged along a first direction (eg Figure 7 The initial wafer section 20 - 1 is divided into N initial wafer sections 20 - 1 in the Z direction shown in FIG. 2 . Each initial wafer section 20 - 1 includes a plurality of initial filters 201 .

[0095] Exemplarily, the first direction Z may be parallel to the Y coordinate axis of the trimming machine and intersect with the X coordinate axis of the trimming machine.

[0096] Specifically, taking N=6 as an example, the initial wafer 20 includes six initial wafer sections 20-1. Along the direction from the first initial wafer section 21 to the sixth initial wafer section 22, the preset frequency modulation layer removal thickness corresponding to each initial wafer section 20-1 increases in sequence.

[0097] Exemplarily, the preset frequency modulation layer removal thickness corresponding to the first initial wafer division 21 is 3nm, that is, the preset frequency modulation layer removal thickness of all initial filters 201 in the first initial wafer division 21 is 3nm. The preset frequency modulation layer removal thickness corresponding to the second initial wafer division is 6nm, that is, the preset frequency modulation layer removal thickness of all initial filters 201 in the second initial wafer division is 6nm. The preset frequency modulation layer removal thickness corresponding to the third initial wafer division is 9nm, the preset frequency modulation layer removal thickness corresponding to the fourth initial wafer division is 12nm, the preset frequency modulation layer removal thickness corresponding to the fifth initial wafer division is 15nm, and the preset frequency modulation layer removal thickness corresponding to the sixth initial wafer division is 18nm.

[0098] S304 , etching the frequency modulation layer of each initial wafer division according to the preset frequency modulation layer removal thickness corresponding to each initial wafer division, and obtaining the trimming frequencies of the multiple initial filters after etching.

[0099] For details, please refer to Figure 7 , the FM layer etching thickness corresponding to the first initial wafer division 21 is 3nm, that is, the preset FM layer removal thickness of all initial filters 201 in the first initial wafer division 21 is 3nm. The FM layer etching thickness corresponding to the second initial wafer division is 6nm, that is, the preset FM layer removal thickness of all initial filters 201 in the second initial wafer division is 6nm, and so on, the FM layer etching corresponding to each initial wafer division is completed.

[0100] Specifically, the trimmed frequency may be understood as the frequency of a plurality of initial filters after the frequency modulation layer in the initial wafer portion is etched.

[0101] S305 , obtaining a target corresponding relationship according to the initial frequency, the modified frequency, and the preset frequency modulation layer removal thickness.

[0102] Specifically, Fig. 9 The fitting curve of the frequency of the initial wafer and the thickness of the preset frequency modulation layer removed provided by the embodiment of the present invention is as follows: Fig. 9 As shown, the frequency change value Δf can be determined according to the difference between the initial frequency and the adjusted frequency of each initial filter. The preset frequency modulation layer removal thickness is the frequency modulation layer thickness change value ΔPSN in each initial filter. In this way, multiple Δf and multiple ΔPSN are fitted to obtain the target corresponding relationship, that is, .

[0103] S306 , determining an etching thickness range of a target frequency modulation layer corresponding to each target filter according to the target corresponding relationship, the preset frequency, and a specification frequency range corresponding to the preset frequency.

[0104] Specifically, the target filter P is a dual-bandpass surface acoustic wave filter as an example for explanation. Figure 4 , we can select the f of the target filter 0 1. f 0 2. f 0 3 and f 0 4 as the preset frequency.

[0105] Specifically, according to the target correspondence , where a and b are constants, ΔPSN is the thickness of the target frequency modulation layer to be etched, and f is determined according to the trimming equation 0 1. f 0 2. f 0 3 and f 0 4 The corresponding adjustment equations are , , and , from which we can get , , , Among them, f 0 The qualified frequency range of 1 is spec1[spec1_min, spec1_max], f 0 The qualified frequency range of 2 is spec2[spec2_min, spec2_max], f 0 The qualified frequency range of 3 is spec3[spec3_min,spec3_max], f 0 The qualified frequency range of 4 is spec4[spec4_min, spec4_max]. Δf1 is the difference between spec1_min and f0 The difference between 1 or spec1_max and f 0 1, so we get , , , , , , , . Fig.10 for Figure 4 Schematic diagram of etching thickness range of target frequency modulation layer of corresponding target filter, such as Figure 4 and Fig.10 As shown, the etching thickness range of the target frequency modulation layer can be determined according to the intersection [ΔPSN_min, ΔPSN_max] of [ΔPSN1_min, ΔPSN1_max], [ΔPSN2_min, ΔPSN2_max], [ΔPSN3_min, ΔPSN3_max], [ΔPSN3_min, ΔPSN3_max] and [ΔPSN4_min, ΔPSN4_max].

[0106] S307 , determining the etching thickness of the target frequency modulation layer corresponding to each etching thickness range filter according to the average value of the etching thickness range.

[0107] Specifically, in order to ensure the accuracy of etching the target frequency modulation layer thickness, the etching thickness of the target frequency modulation layer of the target filter P can be determined as .

[0108] S308 . Determine the etching time corresponding to each target filter according to the target position information and the etching thickness.

[0109] S309 , etching the target frequency modulation layer corresponding to each target filter by using an ion beam according to the target position information and etching time.

[0110] The frequency tuning method of the filter provided in an embodiment of the present invention can determine the tuning equation of the target wafer by obtaining the target correspondence between the frequencies of multiple initial filters in the initial wafer and the frequency tuning layers of the multiple initial filters. This can improve the etching accuracy of the target frequency tuning layer corresponding to the target filter, which is beneficial to ensure the accuracy of the etching results.

[0111] Optional, Fig.11 A flowchart of a fourth filter frequency adjustment method provided by an embodiment of the present invention is shown in FIG. Fig.11 Based on the above embodiment, the operation of obtaining target position information of multiple target filters in a target wafer and determining the etching time corresponding to each target filter according to the target position information and the etching thickness is described in detail. Fig.11As shown, the frequency adjustment method includes:

[0112] S401, obtaining actual position information of multiple target filters in a target wafer.

[0113] Specifically, Fig.12 A schematic diagram of actual coordinates of a target wafer provided by an embodiment of the present invention, such as Fig.12 As shown, the probe selects a target filter in the target wafer as the reference filter and sets its coordinates. The remaining target filters are based on the reference filter and a coordinate map is established with each target filter as a unit. Each time the probe moves a target filter along the X axis, the X coordinate is +1. Similarly, each time a target filter is moved along the Y axis, the Y coordinate is +1.

[0114] Exemplarily, the actual position information of the target filter A is (61, 29), and the actual position information of the target filter B is (63, 31).

[0115] Exemplarily, the selection of the reference filter is random. Since the movement of the ion beam is in an "S" shape, in order to match the movement of the ion beam, the first target filter in the upper left corner can generally be selected as the reference filter.

[0116] S402 : Determine target position information corresponding to each target filter according to actual position information and size information of each target filter and size information of a target wafer.

[0117] Specifically, since the adjusted coordinates are based on the center of the wafer as the origin, the coordinates of each target filter in the adjusted coordinate system are the target distance from the origin.

[0118] For details, please refer to Fig.12 , the size information of the target wafer may include the minimum coordinate Xmin corresponding to the target filter closest to the Y axis of the trimming machine, the maximum coordinate Xmax corresponding to the target filter farthest from the Y axis of the trimming machine, the minimum coordinate Ymin corresponding to the target filter closest to the X axis of the trimming machine, and the maximum coordinate Ymax corresponding to the target filter farthest from the X axis of the trimming machine. Fig.12Taking the wafer shape shown in as an example, the minimum coordinate Xmin corresponding to the target filter closest to the Y-axis of the trimming machine in the target wafer is, that is, the minimum coordinate Xmin corresponding to the leftmost target filter in the target wafer, the maximum coordinate Xmax corresponding to the target filter farthest from the Y-axis of the trimming machine is, that is, the maximum coordinate Xmax corresponding to the rightmost target filter in the target wafer, the minimum coordinate Ymin of the target filter closest to the X-axis of the trimming machine is, that is, the minimum coordinate Ymin corresponding to the bottom target filter in the target wafer, and the maximum coordinate Ymax corresponding to the target filter farthest from the X-axis of the trimming machine is, that is, the maximum coordinate Ymax corresponding to the top target filter in the target wafer. It should be noted that since the shape of one side of the target wafer can be a flat edge, illustratively, the side of the target wafer close to the X-axis of the trimming machine can be a flat edge, so the number of target filters closest to the X-axis of the trimming machine can be multiple, and the Ymin corresponding to multiple target filters is the same.

[0119] Specifically, the size information of the target filter can be understood as the extended size of the target filter on the X-axis and the extended size on the Y-axis, that is, the length and width of the target filter.

[0120] Exemplarily, the length of the target filter P along the X-axis is L, and the width of the target filter along the Y-axis is H. The coordinates (Xp, Yp) measured by the probe and the corresponding adjustment coordinates, that is, the target position information of the target chip is (Xa, Ya), then:

[0121] ;

[0122] .

[0123] S403 , determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter.

[0124] S404, determining a first topological structure of the target wafer according to the target position information and the etching thickness; the first topological structure includes the target position information and the etching thickness of a portion of the target filter in the target wafer.

[0125] Specifically, Fig.13 A schematic diagram of a first topological structure of a target wafer provided in an embodiment of the present invention is shown in FIG. Fig.13 As shown, the target position information of the target filter P is (Xa, Ya), and the etching thickness of the target frequency modulation layer is ΔPSN. The target position information and etching thickness of the target filter P can be expressed as (Xa, Ya, ΔPSN). Therefore, a three-dimensional coordinate can be obtained in the target wafer according to the target position information and etching thickness of each target filter, and then the first topological structure of multiple target filters in the target wafer can be obtained.

[0126] It should be noted that, in order to improve the frequency modulation efficiency, only the target position information and etching thickness of a portion of the target filter in the target wafer may be obtained.

[0127] S405 , converting the first topological structure into a second topological structure by using an interpolation method; the second topological structure includes target position information and etching thickness of all the target filters in the target wafer.

[0128] Specifically, Fig.14 A second topological structure diagram of a target wafer is provided for an embodiment of the present invention, such as Fig.14 As shown, the first topological structure is converted into the second topological structure by using the interpolation method, so that the target position information and etching thickness of the target filter that have not been obtained can be supplemented by the interpolation method, that is, the target position information and etching thickness of a part of the target filters in the target wafer can be used to predict the target position information and etching thickness of the remaining target filters, and then the second topological structure of all the target filters in the target wafer can be obtained.

[0129] S406: Determine the etching time corresponding to each target filter according to the second topological structure.

[0130] Specifically, Fig.15 The etching rate of the ion beam on the target wafer provided by the embodiment of the present invention is a three-dimensional normal distribution diagram, Fig.16 A schematic diagram of the motion trajectory of an ion beam on a target wafer provided by an embodiment of the present invention is shown in FIG. Fig.15 and Fig.16 As shown, the residence time of the ion beam at different coordinates can be converted according to the second topological structure, because the etching rate of the ion beam on the target wafer is a three-dimensional normal distribution, and the step diameter of the ion beam displacement must be smaller than the ion beam velocity diameter d, Fig.16 Each circle in the figure can represent an ion beam. The trajectory of the ion beam can be in an "S" shape, and the ion beam will have a superposition effect at the same position during the movement. , the superposition effect of ion beam etching at different positions can be calculated. Since ΔPSN(Xa, Ya) and etching rate R are known, the residence time t of the ion beam on the target filter P can be determined, so the residence time of the ion beam at (Xa, Ya) can be determined to be t. Therefore, the etching time corresponding to each target filter in the target wafer can be determined.

[0131] S407 , etching the target frequency modulation layer corresponding to each target filter by using an ion beam according to the target position information and the etching time.

[0132] The frequency adjustment method of the filter provided in the embodiment of the present invention can realize coordinate conversion by converting actual position information into target position information. In addition, the first topological structure is converted into the second topological structure by utilizing the interpolation method. In this way, the target position information and etching thickness of the target filter not obtained by the interpolation method can be supplemented, thereby improving the adjustment accuracy, and can further ensure the etching accuracy of the target frequency modulation layer corresponding to each target filter, thereby ensuring that the frequency values ​​of multiple target filters in the target wafer are the same, thereby improving the yield and production efficiency of the target wafer.

[0133] Based on the same inventive concept, an embodiment of the present invention further provides a frequency adjustment device for a filter. Fig.17 A schematic diagram of a frequency adjustment device for a filter provided by an embodiment of the present invention is shown in FIG. Fig.17 As shown, the frequency adjustment device of the filter includes:

[0134] The target position information acquisition module 100 is used to acquire the target position information of multiple target filters in a target wafer; the multiple target filters all include a target frequency modulation layer, and the thickness of the target frequency modulation layer of each target filter is equal.

[0135] The target frequency modulation layer etching thickness determination module 200 is used to determine the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter.

[0136] The etching time determination module 300 is used to determine the etching time corresponding to each target filter according to the target position information and the etching thickness.

[0137] The frequency adjustment module 400 is used to etch the target frequency adjustment layer corresponding to each target filter by using ion beam according to the target position information and etching time.

[0138] Optionally, the target frequency modulation layer etching thickness determination module includes a target correspondence relationship acquisition submodule and a target frequency modulation layer etching thickness determination submodule.

[0139] Specifically, the target correspondence relationship acquisition submodule is used to acquire the target correspondence relationship between the frequencies of multiple initial filters in the initial wafer and the frequency modulation layers of the multiple initial filters.

[0140] Specifically, the target frequency modulation layer etching thickness determination submodule is used to determine the etching thickness of the target frequency modulation layer corresponding to each target filter according to the target corresponding relationship and at least two preset frequencies of each target filter.

[0141] Optionally, the target correspondence relationship acquisition submodule includes an initial frequency acquisition unit, a trimmed frequency acquisition unit and a target correspondence relationship acquisition unit.

[0142] Specifically, the initial frequency acquisition unit is used to acquire the initial frequencies of multiple initial filters in the initial wafer.

[0143] Specifically, the trimmed frequency acquisition unit is used to etch the frequency modulation layers of the multiple initial filters according to the preset frequency modulation layer removal thickness, and acquire the trimmed frequencies of the multiple initial filters after etching.

[0144] Specifically, the target correspondence relationship acquisition unit is used to obtain the target correspondence relationship according to the initial frequency, the modified frequency and the preset frequency modulation layer removal thickness.

[0145] Optionally, the trimmed frequency acquisition unit includes an initial wafer segmentation sub-unit and a frequency modulation layer etching sub-unit.

[0146] Specifically, the initial wafer segmentation sub-unit is used to divide the initial wafer into N initial wafer segments along a first direction; each initial wafer segment includes multiple initial filters; the first direction is parallel to the first coordinate axis of the trimming machine and intersects with the second coordinate axis of the trimming machine; along the direction from the first initial wafer segment to the Nth initial wafer segment, the preset frequency modulation layer removal thickness corresponding to each wafer segment increases successively; wherein N≥2, and N is an integer.

[0147] Specifically, the frequency modulation layer etching sub-unit is used to etch the frequency modulation layer of each initial wafer division according to the preset frequency modulation layer removal thickness corresponding to each initial wafer division.

[0148] Optionally, the etching thickness determination submodule of the target frequency modulation layer includes an etching thickness range determination unit and an etching thickness determination unit.

[0149] Specifically, the etching thickness range determining unit is used to determine the etching thickness range of the target frequency modulation layer corresponding to each target filter according to the target corresponding relationship, the preset frequency and the specification frequency range corresponding to the preset frequency.

[0150] Specifically, the etching thickness determining unit determines the etching thickness of the target frequency modulation layer corresponding to each etching thickness range filter according to the average value of the etching thickness range.

[0151] Optionally, the target location information acquisition module includes an actual location information acquisition submodule and a target location information acquisition submodule.

[0152] Specifically, the actual position information acquisition submodule is used to acquire the actual position information of multiple target filters in the target wafer.

[0153] Specifically, the target position information acquisition submodule is used to determine the target position information corresponding to each target filter according to the actual position information and size information of each target filter and the size information of the target wafer.

[0154] Optionally, the etching time determination module includes a first topology structure determination submodule, a second topology structure determination submodule and an etching time determination submodule.

[0155] Specifically, the first topology structure determination submodule is used to determine the first topology structure of the target wafer according to the target position information and the etching thickness; the first topology structure includes the target position information and the etching thickness of a part of the target filter in the target wafer.

[0156] Specifically, the second topology structure determination submodule is used to convert the first topology structure into a second topology structure by using an interpolation method; the second topology structure includes target position information and etching thickness of all target filters in the target wafer.

[0157] Specifically, the etching time determination submodule is used to determine the etching time corresponding to each target filter according to the second topological structure.

[0158] The frequency adjustment device of the filter provided in the embodiment of the present invention obtains the target position information of multiple target filters in the target wafer through the target position information acquisition module; determines the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter through the etching thickness determination module of the target frequency modulation layer; determines the etching time corresponding to each target filter according to the target position information and the etching thickness through the etching time determination module; and etches the target frequency modulation layer corresponding to each target filter by ion beam according to the target position information and the etching time through the frequency adjustment module, thereby ensuring that the frequency values ​​of multiple target filters in the target wafer are the same, thereby improving the yield and production efficiency of the target wafer.

[0159] Fig.18 The present invention is a schematic diagram of a computer device for a frequency adjustment method of a filter according to an embodiment of the present invention. The computer device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The computer device may also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or claimed herein.

[0160] like Fig.18As shown, the computer device 50 includes at least one processor 51, and a memory connected to the at least one processor 51, such as a read-only memory (ROM) 52, a random access memory (RAM) 53, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 51 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 52 or the computer program loaded from the storage unit 58 to the random access memory (RAM) 53. In the RAM 53, various programs and data required for the operation of the computer device 50 can also be stored. The processor 51, the ROM 52, and the RAM 53 are connected to each other through a bus 54. An input / output (I / O) interface 55 is also connected to the bus 54.

[0161] A number of components in the computer device 50 are connected to the I / O interface 55, including: an input unit 56, such as a keyboard and a mouse, etc.; an output unit 57, such as various types of displays and speakers, etc.; a storage unit 58, such as a disk, an optical disk, etc.; a communication unit 59, such as a network card, a modem, and a wireless communication transceiver, etc. The communication unit 59 allows the computer device 50 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0162] The processor 51 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the processor 51 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller or microcontroller, etc. The processor 51 executes the various methods and processes described above, such as a frequency adjustment method applied to a filter.

[0163] In some embodiments, the frequency trimming method applied to a filter can be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 58. In some embodiments, part or all of the computer program can be loaded and / or installed on the computer device 50 via the ROM 52 and / or the communication unit 59. When the computer program is loaded into the RAM 53 and executed by the processor 51, one or more steps of the frequency trimming method applied to a filter described above can be performed. Alternatively, in other embodiments, the processor 51 can be configured to execute the frequency trimming method applied to a filter in any other suitable manner (for example, by means of firmware).

[0164] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations may include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0165] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0166] In the context of an embodiment of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, device, or apparatus. A computer-readable storage medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or device, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. More specific examples of machine-readable storage media may include electrical connections based on one or more lines, portable computer disks, hard disks, random access memories (RAM), read-only memories (ROM), erasable programmable read-only memories (EPROM or flash memory), optical fibers, portable compact disk read-only memories (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0167] To provide interaction with a user, the systems and techniques described herein may be implemented on a computer device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0168] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0169] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0170] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments herein, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for adjusting the frequency of a filter, characterized in that: include: Acquire target position information of a plurality of target filters in a target wafer; the plurality of target filters all include a target frequency modulation layer, and the thickness of the target frequency modulation layer of each target filter is equal; Determine the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter; at least two preset frequencies are four side frequencies of two passbands of the target filter; Determine the etching time corresponding to each of the target filters according to the target position information and the etching thickness; Etching the target frequency modulation layer corresponding to each of the target filters by using an ion beam according to the target position information and the etching time; Wherein, determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter includes: Obtain a target correspondence between the frequencies of a plurality of initial filters in an initial wafer and the frequency modulation layers of a plurality of the initial filters; the target correspondence is , where a and b are constants, ΔPSN is the thickness of the target frequency modulation layer to be etched; Δf is the frequency change value; Determining the etching thickness of the target frequency modulation layer corresponding to each of the target filters according to the target corresponding relationship and at least two preset frequencies of each of the target filters; Wherein, determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to the target corresponding relationship and at least two preset frequencies of each target filter includes: Obtaining a qualified frequency range corresponding to the preset frequency; Determine the etching thickness range of the target frequency modulation layer corresponding to each preset frequency according to the target corresponding relationship, the preset frequency and the qualified frequency range; Determining an etching thickness range of the target frequency modulation layer corresponding to the target filter according to the intersection of the etching thickness ranges of the target frequency modulation layer corresponding to each of the preset frequencies; The etching thickness of the target frequency modulation layer corresponding to each target filter is determined according to the average value of the etching thickness range of the target frequency modulation layer corresponding to the target filter.

2. The frequency adjustment method of the filter according to claim 1, characterized in that: Obtaining a target correspondence between frequencies of a plurality of initial filters in an initial wafer and frequency modulation layers of a plurality of the initial filters includes: obtaining initial frequencies of a plurality of initial filters in an initial wafer; Etching the frequency modulation layers of the plurality of initial filters according to a preset frequency modulation layer removal thickness, and obtaining the trimmed frequencies of the plurality of initial filters after etching; A target corresponding relationship is obtained according to the initial frequency, the trimmed frequency and the preset frequency modulation layer removal thickness.

3. The frequency adjustment method of the filter according to claim 2, characterized in that: Etching the frequency modulation layers of the plurality of initial filters according to a preset frequency modulation layer removal thickness comprises: The initial wafer is divided into N initial wafer sections along a first direction; each of the initial wafer sections includes a plurality of the initial filters; the first direction is parallel to a first coordinate axis of the trimming machine and intersects with a second coordinate axis of the trimming machine; along a direction from the first initial wafer section to the Nth initial wafer section, the preset frequency modulation layer removal thickness corresponding to each of the wafer sections increases in sequence; wherein N≥2, and N is an integer; The frequency modulation layer of each of the initial wafer divisions is etched according to the preset frequency modulation layer removal thickness corresponding to each of the initial wafer divisions.

4. The frequency adjustment method of the filter according to claim 1, characterized in that: Obtain target position information of multiple target filters within a target wafer, including: Acquire actual position information of multiple target filters in a target wafer; The target position information corresponding to each of the target filters is determined according to the actual position information and size information of each of the target filters and the size information of the target wafer.

5. The frequency adjustment method of the filter according to claim 1, characterized in that: Determining the etching time corresponding to each of the target filters according to the target position information and the etching thickness includes: Determine a first topological structure of the target wafer according to the target position information and the etching thickness; the first topological structure includes the target position information and the etching thickness of a portion of the target filter in the target wafer; The first topological structure is converted into a second topological structure by using an interpolation method; the second topological structure includes target position information and etching thickness of all the target filters in the target wafer; The etching time corresponding to each of the target filters is determined according to the second topological structure.

6. A frequency adjustment device for a filter, characterized in that: include: A target position information acquisition module, used to acquire target position information of multiple target filters in a target wafer; The plurality of target filters all include a target frequency modulation layer, and the thickness of the target frequency modulation layer of each target filter is equal; The etching thickness determination module of the target frequency modulation layer is used to determine the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter; at least two preset frequencies are four side frequencies of two passbands of the target filter; An etching time determination module, used to determine the etching time corresponding to each of the target filters according to the target position information and the etching thickness; A frequency adjustment module, used for etching the target frequency modulation layer corresponding to each target filter by ion beam according to the target position information and the etching time; The target frequency modulation layer etching thickness determination module includes a target correspondence relationship acquisition submodule and a target frequency modulation layer etching thickness determination submodule; the target correspondence relationship acquisition submodule is used to obtain the target correspondence relationship between the frequencies of multiple initial filters in the initial wafer and the frequency modulation layers of the multiple initial filters; the target correspondence relationship is , wherein a and b are constants, ΔPSN is the thickness of the target frequency modulation layer to be etched; Δf is the frequency change value; the etching thickness determination submodule of the target frequency modulation layer is used to determine the etching thickness of the target frequency modulation layer corresponding to each target filter according to the target corresponding relationship and at least two preset frequencies of each target filter; Among them, the etching thickness determination submodule of the target frequency modulation layer includes an etching thickness range determination unit and an etching thickness determination unit; The etching thickness range determination unit is used to obtain the qualified frequency range corresponding to the preset frequency, and determine the etching thickness range of the target frequency modulation layer corresponding to each preset frequency according to the target corresponding relationship, the preset frequency and the qualified frequency range; and determine the etching thickness range of the target frequency modulation layer corresponding to the target filter according to the intersection of the etching thickness ranges of the target frequency modulation layer corresponding to each preset frequency; The etching thickness determination unit is used to determine the etching thickness of the target frequency modulation layer corresponding to each target filter according to the average value of the etching thickness range of the target frequency modulation layer corresponding to the target filter.

7. A computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the frequency adjustment method of the filter according to any one of claims 1 to 5 is implemented.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the frequency adjustment method of the filter according to any one of claims 1 to 5 is implemented.

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