High-uniformity room-temperature medium-wave infrared array detector for passive imaging detection and application thereof

Abstract

The high-uniformity room-temperature medium-wave infrared column detector for passive imaging detection comprises a silicon substrate, a photosensitive area and chromium / gold metal electrodes arranged at the two ends of the photosensitive area, and the photosensitive area is a molybdenum disulfide / black phosphorus heterojunction area formed on the silicon substrate. The molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement mode to form a 1 * 8 linear array, the chromium / gold metal electrode at one end is only in contact with molybdenum disulfide, and the chromium / gold metal electrode at the other end is only in contact with black phosphorus. The high-uniformity room-temperature medium-wave infrared array detector for passive imaging detection provided by the invention is a high-sensitivity and high-uniformity room-temperature medium-wave infrared Van der Waals heterojunction array detector.

Description

Technical Field

[0001] The invention belongs to the technical field of medium-wave infrared signal detection, and in particular relates to a high-uniform room-temperature medium-wave infrared array detector for passive imaging detection and an application thereof. Background Art

[0002] Room temperature medium-wave infrared detectors are capable of passive imaging detection under uncooled conditions. This type of detector does not rely on a cooling system and has the advantages of low power consumption, miniaturization, and integration. The passive imaging detection capability enables the detector to be independent of external lighting sources and directly detect infrared radiation signals from the target object itself, with the advantages of all-weather operation and strong concealment. In order to improve the passive imaging efficiency of the detector, an effective method is to increase the number of pixels in the detector device. For a single-pixel device, in order to image the target object, the single-pixel device needs to be scanned sequentially in a two-dimensional plane, which takes a long time and has a slow imaging speed. Further, the number of pixels is increased in one-dimensional direction to form a linear detector. During imaging, the linear detector only needs to be scanned in one dimension in a direction perpendicular to the linear array, which can shorten the imaging time and achieve rapid imaging of the target. Therefore, it is of great significance to prepare a room temperature medium-wave infrared linear detector with passive imaging detection capability.

[0003] Van der Waals layered materials have no dangling bonds on their surfaces, and have atomically thin thickness, high mobility, and strong light absorption properties. Detectors based on van der Waals materials exhibit low dark current, fast response, low noise, and high sensitivity, and have shown significant advantages in the field of room temperature infrared photoelectric detection. Currently, methods for preparing infrared multi-pixel detectors include wet transfer, thermal evaporation, and magnetron sputtering.

[0004] The large-area wet transfer method of transition metal chalcogenides can realize the preparation of wafer-level multi-pixel devices. On the one hand, the photosensitive materials used in the preparation of such devices are usually few-layer two-dimensional materials, resulting in low light absorption efficiency; on the other hand, the photosensitive materials are wide-bandgap materials, and the detection band can only cover short-wave infrared or even near-infrared, which is not suitable for medium-wave infrared detection. The materials prepared by thermal evaporation and magnetron sputtering are polycrystalline, with defects and poor uniformity, resulting in decreased mobility and increased carrier capture probability, which is manifested as slow device response speed, low detection rate, and low uniformity.

[0005] Therefore, how to simultaneously solve the problems of poor consistency of each pixel in a multi-pixel array in a room-temperature medium-wave infrared detector, poor interface contact quality, and irregular arrangement of each pixel, and provide a highly uniform room-temperature medium-wave infrared array detector for passive imaging detection and its application are technical problems that need to be urgently solved by technical personnel in this field. Summary of the invention

[0006] The first object of the present invention is to provide a highly uniform room temperature mid-wave infrared array detector for passive imaging detection in view of the problems in the prior art.

[0007] To this end, the above-mentioned purpose of the present invention is achieved through the following technical solutions: A highly uniform room temperature medium wave infrared array detector for passive imaging detection, characterized in that it comprises a silicon substrate, a photosensitive region and chromium / gold metal electrodes arranged at both ends of the photosensitive region, wherein the photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate, wherein the molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array, wherein the chromium / gold metal electrode at one end is in contact only with the molybdenum disulfide, and the chromium / gold metal electrode at the other end is in contact only with the black phosphorus, and is prepared by the following steps: S1, Mechanical exfoliation of the first single-crystalline two-dimensional material MoS 2 , S2, the first single crystal two-dimensional material MoS 2 Transfer to PDMS; S3, the first single crystal two-dimensional material MoS bonded to the PDMS sheet 2 Transfer to the first silicon wafer to obtain the first single crystal two-dimensional material MoS on the first silicon wafer 2 ; S4, the first single crystal two-dimensional material MoS 2 Perform etching; S5, the etched first single crystal two-dimensional material MoS 2 Transferring to a second silicon wafer; S6, copying step S1-step S2, preparing a PDMS sheet with a single-crystalline two-dimensional material BP having a narrow band gap pasted thereon; S7, tilt the PDMS sheet, lower the PDMS sheet, and stop before one side of the single-crystalline two-dimensional material BP with a narrow band gap contacts the first single-crystalline two-dimensional material MoS2 in step S5, heat the second silicon wafer, and the tilted PDMS sheet expands due to the heat, driving the single-crystalline two-dimensional material BP with a narrow band gap to gradually cover and contact the single-crystalline two-dimensional material from one side to the other, and maintain the temperature of the second silicon wafer constant until the first single-crystalline two-dimensional material MoS2 and the single-crystalline two-dimensional material BP with a narrow band gap are completely attached to form a large-sized uniform heterojunction without bubbles, residues, and complete materials; S8, after the second silicon wafer is cooled to room temperature, the PDMS sheet shrinks, and the PDMS sheet is lifted to obtain a molybdenum disulfide / black phosphorus heterojunction on the second silicon wafer; S9, preparing chromium / gold metal electrodes at both ends of the MoS2 / BP heterojunction; S10, the MoS2 / BP heterojunction is divided into multiple pixel units from the same single crystal with uniform heterojunction interfaces through an etching process, forming a 1×8 linear structure with consistent photoelectric response and high detection rate.

[0008] While adopting the above technical solutions, the present invention may also adopt or combine the following technical solutions: As a preferred technical solution of the present invention: in step S4, the etched first single crystal two-dimensional material MoS 2 It is square in shape.

[0009] As a preferred technical solution of the present invention: in step S5, the first single crystal two-dimensional material MoS after etching is picked up by using the PPC film 2 , and transfer it to a second silicon wafer to obtain a two-dimensional material MoS on the second silicon wafer 2 sample.

[0010] As a preferred technical solution of the present invention: in step S7, the PDMS sheet and the first single crystal two-dimensional material MoS are placed at an angle. 2 The angle is 5°, and the temperature of the second silicon wafer is slowly heated to 50°C and then kept constant until the heterojunction is formed.

[0011] As a preferred technical solution of the present invention: step S9 specifically includes spin coating PMMA on the second silicon wafer in step S8 and exposing an electrode window on the molybdenum disulfide / black phosphorus heterojunction using electron beam lithography, preparing a chromium / gold metal electrode by thermal evaporation, and removing PMMA by immersion in acetone.

[0012] As a preferred technical solution of the present invention: Step S10 specifically includes: spin coating PMMA on the second silicon wafer and using electron beam lithography to expose an etching window, removing the heterojunction exposed area by reactive ion etching, and removing PMMA by immersion in acetone to form a room temperature mid-wave infrared van der Waals heterojunction array detector.

[0013] As a preferred technical solution of the present invention: the detector is covered with an isolation layer on a 1×8 linear array to protect the molybdenum disulfide / black phosphorus heterojunction region.

[0014] A second object of the present invention is to provide an application of a highly uniform room temperature medium wave infrared array detector for passive imaging detection in view of the problems in the prior art.

[0015] To this end, the above-mentioned purpose of the present invention is achieved through the following technical solutions: The application of high uniformity room temperature medium wave infrared array detector for passive imaging detection is characterized by being applied to imaging detection.

[0016] Compared with the prior art, the present invention has the following beneficial effects: The invention discloses a highly uniform room-temperature medium-wave infrared array detector for passive imaging detection and an application thereof. A temperature-assisted method is adopted to prepare a room-temperature medium-wave infrared van der Waals heterojunction array detector. During the preparation process, the temperature of the silicon wafer is adjusted to adjust the tilt angle of PDMS, thereby regulating the temperature of the tilted PDMS. The small-angle tilt of the PDMS slice and the expansion and contraction characteristics of the PDMS are utilized to achieve precise transfer and contact of the two-dimensional material, thereby achieving the preparation of a narrow-bandgap two-dimensional material heterojunction with a large size, high quality and uniform heterogeneous interface. The problems of poor consistency of pixels in a multi-pixel array, poor interface contact quality and irregular pixel arrangement are simultaneously solved, so that a room-temperature medium-wave infrared van der Waals heterojunction array detector with high sensitivity and high uniformity can be prepared, the response rate of the detector is improved, the stability and reliability of the detector are enhanced, the working temperature of the detector is increased, and medium-wave infrared detection at room temperature is achieved, thereby expanding its application range under various environmental conditions, improving the imaging quality, and improving the overall performance of the detector.

[0017] In the preparation of a highly uniform room temperature medium-wave infrared array detector for passive imaging detection, the present invention uses a temperature-assisted PDMS sheet to prepare a large-area van der Waals layered structure, which has the advantages of avoiding pollution, accurately controlling the contact area and compatibility. The PDMS contacts the silicon wafer at a small angle, and the two-dimensional material is slowly attached to the silicon wafer through the expansion of the PDMS when heated, thereby avoiding problems such as material wrinkles and bubbles caused by manual or mechanical PDMS downward pressure. The characteristic of the tilted PDMS sheet being heated and expanded is utilized to achieve a contact area that slowly expands from one side to the other along a specific direction until the two-dimensional material is completely covered. This gradual covering method helps to reduce the generation of bubbles and wrinkles, and can improve the quality and uniformity of the van der Waals vertical structure while preparing a large-area narrow bandgap material heterojunction, ensuring that the contact between the van der Waals vertical structures is uniform and defect-free.

[0018] The method for preparing the array of highly uniform room-temperature medium-wave infrared line array detectors for passive imaging detection provided by the present invention utilizes a temperature-assisted method to prepare a large-size, high-quality, and uniform heterojunction of narrow-bandgap two-dimensional materials, so as to ensure the consistency of each pixel in the multi-pixel array and the performance of the overall device, so as to promote the effective transmission of carriers and improve the photoelectric response performance of the device, thereby realizing a highly uniform room-temperature medium-wave infrared line array detector, which has broad application prospects in many fields such as microfluidic chip manufacturing, flexible electronic devices, medical devices, electronic appliances, environmental monitoring, and tissue engineering. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A flow chart of a method for preparing a highly uniform room temperature mid-wave infrared array detector for passive imaging detection of the invention; Figure 2A schematic diagram of a method for preparing a highly uniform room temperature mid-wave infrared array detector for passive imaging detection according to the present invention; Figure 3 It is a schematic structural diagram of a highly uniform room temperature medium wave infrared array detector for passive imaging detection of the present invention; Figure 4 Schematic diagram of the structure of the molybdenum disulfide / black phosphorus heterojunction region of the present invention; Figure 5 A schematic diagram of the imaging detection application of the high uniform room temperature medium wave infrared array detector for passive imaging detection of the present invention; Figure 6 A response time diagram of a high uniform room temperature mid-wave infrared array detector for passive imaging detection of the present invention; Figure 7 A detectivity diagram of a high uniform room temperature mid-wave infrared array detector for passive imaging detection of the present invention; Figure 8 for Figure 5 A comparison diagram of the imaging diagram obtained in the present invention and the unit imaging diagram in the prior art; In the figure, chromium / gold metal electrode 1; first single crystal two-dimensional material MoS 2 2; single crystal two-dimensional material BP with narrow band gap 3; silicon substrate 4; high uniformity room temperature mid-wave infrared array detector 100 for passive imaging detection. DETAILED DESCRIPTION

[0020] The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

[0021] The high uniform room temperature medium wave infrared array detector for passive imaging detection of the present invention comprises a silicon substrate, a photosensitive region and chromium / gold metal electrodes arranged at both ends of the photosensitive region, wherein the photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate, wherein the molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array, wherein the chromium / gold metal electrode at one end is in contact only with the molybdenum disulfide, and the chromium / gold metal electrode at the other end is in contact only with the black phosphorus, and the detector is prepared by the following steps: S1, mechanical exfoliation of the first single crystal two-dimensional material; S2, transferring the first single crystal two-dimensional material to PDMS to obtain the first single crystal two-dimensional material adhered to the PDMS sheet; S3, transferring the first single crystal two-dimensional material adhered to the PDMS sheet to the first silicon wafer to obtain the first single crystal two-dimensional material located on the first silicon wafer; S4, etching the first single crystal two-dimensional material; S5, transferring the etched first single crystal two-dimensional material to a second silicon wafer; S6, repeating step S1-step S2 to prepare a PDMS sheet with a single crystal two-dimensional material having a narrow band gap; S7, adjust the angle of the PDMS sheet until the angle between the single crystal two-dimensional material with a narrow band gap and the first single crystal two-dimensional material in step S5 is 5°, lower the PDMS sheet until the single crystal two-dimensional material with a narrow band gap stops before contacting the first single crystal two-dimensional material in step S5, heat the second silicon wafer, and the PDMS sheet expands due to the heat, driving the single crystal two-dimensional material with a narrow band gap to slowly cover the contacting single crystal two-dimensional material from one side to the other side along a specific direction, and keep the temperature of the second silicon wafer constant to maintain the contact state between the PDMS sheet and the two-dimensional material until a heterojunction is formed between the first single crystal two-dimensional material and the single crystal two-dimensional material with a narrow band gap; wherein the specific direction refers to a small angle tilt direction along the PDMS sheet.

[0022] S8, slowly cool the second silicon wafer to room temperature, the PDMS sheet shrinks, and the PDMS sheet is lifted to obtain a heterojunction between a large-sized first single-crystalline two-dimensional material and a narrow-bandgap single-crystalline two-dimensional material on the second silicon wafer.

[0023] S9, spin-coating PMMA on the silicon wafer in step S8 and exposing electrode windows on the heterojunction by electron beam lithography, preparing electrodes by thermal evaporation, and removing PMMA by immersion in acetone.

[0024] S10, spin-coating PMMA on the silicon wafer in step S9 and using electron beam lithography to expose an etching window, and removing MoS by reactive ion etching 2 The exposed area of ​​the / BP heterojunction was immersed in acetone to remove PMMA and form room temperature mid-wave infrared van der Waals MoS 2 / BP heterojunction array detector.

[0025] The beneficial effects of the present invention are as follows: the highly uniform room temperature medium wave infrared array detector for passive imaging detection of the present invention solves the problem that the existing technology cannot realize large-scale narrow bandgap single crystal two-dimensional materials, BP cannot realize large-scale single crystal preparation, and it is difficult to form array or array devices through its preparation method. By making PDMS contact with the silicon wafer at a small angle, the two-dimensional material is slowly attached to the silicon wafer from one side to the other side along a specific direction through the expansion of PDMS by heating, avoiding the problems of material wrinkles and bubbles caused by manual or mechanical PDMS pressing down. By this method, a room temperature medium wave infrared van der Waals heterojunction array detector with high sensitivity and uniformity can be prepared.

[0026] In the present invention, PDMS has good chemical stability and biocompatibility, and it is compatible with a variety of two-dimensional materials, including MoS 2The combination of different materials, including the PDMS / BP heterojunction, makes it possible to prepare multifunctional van der Waals heterostructures. PDMS-assisted dry transfer is used. By taking advantage of the good stability of the PDMS material and slowly raising and lowering its temperature, the expansion and contraction of the PDMS sheet can be precisely controlled to achieve precise manipulation and transfer of the two-dimensional material. In addition, by adjusting the PDMS tilt angle, the contact area can be slowly expanded from one side to the other in a specific direction during the expansion process, which can avoid the generation of two-dimensional materials and the existence of bubbles at the heterojunction surface. Example 1

[0027] like Figure 1-Figure 4 As shown, a high uniformity room temperature medium wave infrared array detector for passive imaging detection of the present invention comprises a silicon substrate 4, a photosensitive region and chromium / gold metal electrodes 1 arranged at both ends of the photosensitive region, the photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate, the molybdenum disulfide / black phosphorus heterojunction is integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array, wherein the chromium / gold metal electrode at one end is only in contact with the molybdenum disulfide 2, and the chromium / gold metal electrode at the other end is only in contact with the black phosphorus 3. The high uniformity room temperature medium wave infrared array detector for passive imaging detection of the present invention is prepared by the following steps: Step S1 specifically includes the following steps: S1.1, cut the PDMS with a scalpel to obtain a 20mm×8mm×160μm PDMS sheet, and place the PDMS sheet in the middle of a clean glass slide, with one end of the PDMS fixed with blue tape. PDMS is polydimethylsiloxane, a synthetic silicone rubber commonly used in laboratories and industrial applications. S1.2, take a certain amount of MoS 2 Place the single crystal sheet of the two-dimensional material on the blue tape, fold the blue tape in half and stick it on, repeat the folding and sticking 5-10 times, and make the first single crystal two-dimensional material MoS 2 Cover an area with blue tape.

[0028] Step S2 specifically includes the following steps: S2.1, paste the first single crystal two-dimensional material MoS 2 The blue tape is attached to the PDMS sheet in step S1, and is gently pressed with the thumb for 1 minute, and then the blue tape with the two-dimensional material is quickly torn off from the end where the blue tape is fixed.

[0029] S2.2, directly observe the two-dimensional material sample on the PDMS sheet under a microscope, select the two-dimensional material sample with regular shape and appropriate thickness, and then use a scalpel to cut and remove the excess PDMS near the sample.

[0030] Step S3, pasting the first single crystal two-dimensional material MoS 2 The remaining PDMS sheet of the sample is pasted onto a clean first silicon wafer to obtain a first single crystal two-dimensional material MoS with a larger size on the first silicon wafer. 2 .

[0031] In step S4, PMMA is spin-coated on the first silicon wafer and a window of the part to be etched is exposed by electron beam lithography, and the exposed area is removed by reactive ion etching, leaving a rectangular first single crystal two-dimensional material MoS 2 Sample. Among them, PMMA, the full name of which is polymethyl methacrylate, is a high molecular polymer with a wide range of applications.

[0032] In step S5, the etched rectangular two-dimensional material sample is picked up by using the PPC film and transferred to a new second silicon wafer to obtain a rectangular two-dimensional material sample located on the second silicon wafer. PPC is polypropylene carbonate, which is a polymer material.

[0033] In step S6, steps S1-S2 are replicated, and the two-dimensional material used in the process is changed to a single-crystal two-dimensional material BP with a certain narrow band gap. BP refers to black phosphorus, which is a two-dimensional semiconductor material.

[0034] In step S7, the remaining PDMS sheet with the narrow bandgap two-dimensional material sample is slowly moved close to the second silicon wafer prepared in step S5 at an inclination angle of 5°, and the narrow bandgap single crystal two-dimensional material BP is aligned with the rectangular two-dimensional material sample in step S5.

[0035] The tilted PDMS sheet is slowly lowered mechanically, and the lowering is stopped before the contact area covers the aligned two-dimensional material sample.

[0036] The temperature of the second silicon wafer is slowly raised to 50°C, and then kept constant. As the temperature rises, the contact area slowly expands from one side to the other in one direction due to the thermal expansion of the PDMS sheet, until the contact area is completely covered with the single-crystalline two-dimensional material BP with a narrow band gap. After reaching the required temperature, the temperature needs to be kept constant to maintain the contact state between the PDMS sheet and the two-dimensional material until the heterojunction is formed.

[0037] The temperature of the silicon wafer is slowly raised to 50°C, during which the PDMS sheet will expand due to heat. Since the thermal expansion coefficient of PDMS is typically 150-200 ppm / K, this means that the length or volume of PDMS will increase by 0.15% to 0.2% for every 1°C increase in temperature. As the temperature rises, the expansion of the PDMS sheet causes the contact area to slowly expand until it completely covers the narrow bandgap single-crystalline two-dimensional material BP. This step is critical to ensuring the quality of the heterojunction because it requires ensuring that the MoS2 The contact between the BP and the BP is uniform and defect-free.

[0038] Although the current bottom-up growth method can achieve large-area two-dimensional flake growth, it is still a challenge to seamlessly merge these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation. In this application, the use of temperature-assisted PDMS flakes helps to solve these problems and can achieve high-quality and uniform interfaces while preparing large-area narrow-bandgap material heterojunctions.

[0039] In step S8, the temperature is slowly lowered to room temperature, and the PDMS sheet is slowly lifted, so as to obtain a large-sized, uniform two-dimensional material heterojunction sample on the silicon wafer.

[0040] In steps S9 and S10, PMMA is spin-coated on the second silicon wafer and an electrode window is exposed on the heterojunction by electron beam lithography, an electrode is prepared by thermal evaporation, and PMMA is removed by immersion in acetone. PMMA is spin-coated on the second silicon wafer and an etching window is exposed by electron beam lithography, the heterojunction exposed area is removed by reactive ion etching, and PMMA is removed by immersion in acetone to form a room temperature mid-wave infrared van der Waals heterojunction array detector.

[0041] like Figure 6 , Figure 7 As shown, the high uniformity room temperature medium wave infrared line array detector for passive imaging detection of the present invention has a response speed of 44 μs and a detection rate of 4×109 cm Hz1 / 2 W-1. The response time and detection rate are basically consistent and have high uniformity.

[0042] like Figure 5 As shown, Figure 8 As shown, by using the high uniformity room temperature medium wave infrared line array detector of the passive imaging detection of the present invention to push broom imaging in a direction perpendicular to the line array at room temperature, the target area image can be directly acquired, and a larger target image can be acquired by multi-row push broom detection. The target image acquired by the line array device detection is compared with the target image acquired by the single pixel device detection, and the root mean square difference is 14.27, which further proves that the device has high uniformity.

[0043] The above-mentioned specific implementation methods are used to explain the present invention and are only preferred embodiments of the present invention, rather than limiting the present invention. Any modifications, equivalent substitutions, improvements, etc. made to the present invention within the spirit of the present invention and the protection scope of the claims shall fall within the protection scope of the present invention.

Claims

1. Highly uniform room temperature medium wave infrared array detector for passive imaging detection, characterized by: The invention comprises a silicon substrate, a photosensitive region and chromium / gold metal electrodes arranged at both ends of the photosensitive region, wherein the photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate, wherein the molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array, wherein the chromium / gold metal electrode at one end is in contact with the molybdenum disulfide only, and the chromium / gold metal electrode at the other end is in contact with the black phosphorus only, and the linear array is prepared by the following steps: S1, mechanical exfoliation of the first single-crystalline two-dimensional material MoS2, S2, transferring the first single crystal two-dimensional material MoS2 to PDMS; S3, transferring the first single crystal two-dimensional material MoS2 adhered to the PDMS sheet to the first silicon wafer, to obtain the first single crystal two-dimensional material MoS2 located on the first silicon wafer; S4, etching the first single crystal two-dimensional material MoS2; S5, transferring the etched first single crystal two-dimensional material MoS2 to the second silicon wafer; S6, copying step S1-step S2, preparing a PDMS sheet with a single-crystalline two-dimensional material BP having a narrow band gap pasted thereon; S7, tilt the PDMS sheet, lower the PDMS sheet, and stop before one side of the single-crystalline two-dimensional material BP with a narrow band gap contacts the first single-crystalline two-dimensional material MoS2 in step S5, heat the second silicon wafer, and the tilted PDMS sheet expands due to the heat, driving the single-crystalline two-dimensional material BP with a narrow band gap to gradually cover and contact the single-crystalline two-dimensional material from one side to the other, and maintain the temperature of the second silicon wafer constant until the first single-crystalline two-dimensional material MoS2 and the single-crystalline two-dimensional material BP with a narrow band gap are completely attached to form a large-sized uniform heterojunction without bubbles, residues, and complete materials; S8, after the second silicon wafer is cooled to room temperature, the PDMS sheet shrinks, and the PDMS sheet is lifted to obtain a molybdenum disulfide / black phosphorus heterojunction on the second silicon wafer; S9, preparing chromium / gold metal electrodes at both ends of the MoS2 / BP heterojunction; S10, the MoS2 / BP heterojunction is divided into multiple pixel units from the same single crystal with uniform heterojunction interfaces through an etching process, forming a 1×8 linear structure with consistent photoelectric response and high detection rate.

2. The high uniformity room temperature medium wave infrared array detector for passive imaging detection as claimed in claim 1, characterized in that: In step S4, the etched first single crystal two-dimensional material MoS2 is in a square shape.

3. The high uniformity room temperature medium wave infrared array detector for passive imaging detection as claimed in claim 1, characterized in that: In step S5, the etched first single crystal two-dimensional material MoS2 is picked up using the PPC film and transferred to the second silicon wafer to obtain a two-dimensional material MoS2 sample on the second silicon wafer.

4. The high uniformity room temperature medium wave infrared array detector for passive imaging detection as claimed in claim 1, characterized in that: In step S7, the PDMS sheet and the first single crystal two-dimensional material MoS2 are placed at an angle of 5°, and the temperature of the second silicon wafer is slowly heated to 50°C, and the temperature is kept constant until a heterojunction is formed.

5. The high uniformity room temperature medium wave infrared array detector for passive imaging detection as claimed in claim 1, characterized in that: Step S9 specifically includes spin coating PMMA on the second silicon wafer in step S8 and exposing electrode windows on the molybdenum disulfide / black phosphorus heterojunction using electron beam lithography, preparing chromium / gold metal electrodes by thermal evaporation, and removing PMMA by immersion in acetone.

6. The high uniformity room temperature medium wave infrared array detector for passive imaging detection as claimed in claim 5, characterized in that: Step S10 specifically includes: spin coating PMMA on the second silicon wafer and exposing an etching window using electron beam lithography, removing the heterojunction exposed area by reactive ion etching, and removing PMMA by immersion in acetone to form a room temperature mid-wave infrared van der Waals heterojunction array detector.

7. The high uniformity room temperature medium wave infrared array detector for passive imaging detection as claimed in claim 1, characterized in that: The detectors are covered with an isolation layer on a 1×8 linear array to protect the MoS2 / BP heterojunction region.

8. Application of the highly uniform room temperature medium wave infrared array detector for passive imaging detection according to any one of claims 1 to 7, characterized in that: Used in imaging detection.

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