Light-emitting diode and light-emitting diode preparation method

Abstract

The invention provides a light emitting diode and a light emitting diode preparation method. The light-emitting diode comprises an epitaxial structure, a dielectric film reflecting layer and a silver mirror layer, the epitaxial structure is provided with a step structure, the step structure comprises a step top surface and a step bottom surface, and the dielectric film reflecting layer covers the step structure; the dielectric film reflecting layer is provided with a first dielectric film through hole in the bottom surface of the step, the dielectric film reflecting layer is provided with a plurality of second dielectric film through holes in the top surface of the step, the silver mirror layer is located on the dielectric film reflecting layer, and the silver mirror layer is electrically connected with the epitaxial structure through the plurality of second dielectric film through holes; the projections of the plurality of second dielectric film through holes closest to the projection of the first dielectric film through hole are uniformly distributed around the projection of the first dielectric film through hole, and the projection of the first dielectric film through hole and the projection of the second dielectric film through hole are respectively the projection of the first dielectric film through hole and the projection of the second dielectric film through hole on the surface, far away from the dielectric film reflecting layer, of the epitaxial structure.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and in particular to a light-emitting diode and a method for preparing the light-emitting diode. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor device that can emit light. It has the advantages of energy saving, high brightness, high durability, long life and light weight. It has been widely used in two major fields: backlight display and direct display.

[0003] The related art provides a light emitting diode, which includes an epitaxial structure, a dielectric film reflective layer, a silver mirror layer, etc. The dielectric film reflective layer is provided with a through hole, and the silver mirror layer is connected to the epitaxial structure through the through hole.

[0004] In the above-mentioned light-emitting diode, since the through hole size opened in the dielectric film reflective layer is small, the current density is relatively large and uneven, resulting in excessive local heat and damage to the light-emitting diode. Summary of the invention

[0005] The embodiments of the present disclosure provide a light emitting diode and a method for manufacturing a light emitting diode, which can significantly improve the problem of excessive local heat in the chip causing damage to the light emitting diode and improve the reliability of the light emitting diode. The technical solution is as follows:

[0006] In one aspect, a light emitting diode is provided, the light emitting diode comprising:

[0007] Epitaxial structure, dielectric film reflective layer and silver mirror layer;

[0008] The epitaxial structure is provided with a step structure, the step structure includes a step top surface and a step bottom surface, and the dielectric film reflective layer covers the step structure;

[0009] The dielectric film reflection layer is provided with a first dielectric film through hole on the bottom surface of the step, the dielectric film reflection layer is provided with a plurality of second dielectric film through holes on the top surface of the step, the silver mirror layer is located on the dielectric film reflection layer, and the silver mirror layer is electrically connected to the epitaxial structure through the plurality of second dielectric film through holes;

[0010] The projections of multiple second dielectric film through holes closest to the projection of the first dielectric film through hole are evenly distributed around the projection of the first dielectric film through hole, and the projection of the first dielectric film through hole and the projection of the second dielectric film through hole are respectively the projections of the first dielectric film through hole and the second dielectric film through hole on the side of the epitaxial structure away from the dielectric film reflective layer.

[0011] Optionally, the projection of the first dielectric film through hole is circular, and the projections of a plurality of the second dielectric film through holes closest to the projection of the first dielectric film through hole are distributed on the same circle.

[0012] Optionally, the arc occupied by the projections of two adjacent through holes of the second dielectric film on the same circle is 45°.

[0013] Optionally, the arc occupied by the projections of two adjacent through holes of the second dielectric film on the same circle is 40°.

[0014] Optionally, the distance between the projections of the plurality of second dielectric film through holes closest to the projection of the first dielectric film through hole and the projection of the first dielectric film through hole is 20-50 μm.

[0015] Optionally, the radius of the through hole of the second dielectric film is 2-6 μm.

[0016] In another aspect, a method for preparing a light emitting diode comprises:

[0017] Manufacturing an epitaxial structure, wherein the epitaxial structure is provided with a step structure, wherein the step structure comprises a step top surface and a step bottom surface;

[0018] A dielectric film reflection layer is fabricated on the epitaxial structure, and the dielectric film reflection layer covers the step structure; the dielectric film reflection layer is provided with a first dielectric film through hole on the bottom surface of the step, and the dielectric film reflection layer is provided with a plurality of second dielectric film through holes on the top surface of the step; the projections of the plurality of second dielectric film through holes closest to the projection of the first dielectric film through hole are evenly distributed around the projection of the first dielectric film through hole, and the projections of the first dielectric film through hole and the second dielectric film through hole are respectively the projections of the first dielectric film through hole and the second dielectric film through hole on a side of the epitaxial structure away from the dielectric film reflection layer;

[0019] A silver mirror layer is manufactured on the dielectric film reflective layer, and the silver mirror layer is electrically connected to the epitaxial structure through the plurality of second dielectric film through holes.

[0020] Optionally, the projection of the first dielectric film through hole is circular, and the projections of a plurality of the second dielectric film through holes closest to the projection of the first dielectric film through hole are distributed on the same circle.

[0021] Optionally, the arc occupied by the projections of two adjacent through holes of the second dielectric film on the same circle is 45°.

[0022] Optionally, the arc occupied by the projections of two adjacent through holes of the second dielectric film on the same circle is 40°.

[0023] The technical solution provided by the embodiments of the present disclosure brings the following beneficial effects:

[0024] Through experiments on light-emitting diodes of related technology, it can be known that a circle of through holes near the bottom surface of the step in the light-emitting diode of related technology is the main area where uneven current density causes heat damage to the epitaxy. For this reason, in the embodiment of the present disclosure, a first dielectric film hole and a second dielectric film through hole are arranged on the dielectric film reflective layer, wherein the first dielectric film through hole is opened corresponding to the bottom surface of the step, and the second dielectric film through hole is a through hole for current to pass through. A plurality of second dielectric film through holes closest to the first dielectric film through hole are evenly distributed around the first dielectric film through hole, so that the current can be injected more evenly, avoiding current concentration and reducing heat, so as to improve the chip overload electrical stress (EOS) capability and improve the reliability of the light-emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0026] Figure 1 A schematic diagram of the structure of a light emitting diode provided in an embodiment of the present disclosure;

[0027] Figure 2 A top view of the structure of a light emitting diode provided by an embodiment of the present disclosure;

[0028] Figure 3 A top view of a light-emitting diode through-hole arrangement structure provided by an embodiment of the present disclosure;

[0029] Figure 4 A top view of a light-emitting diode through-hole arrangement structure provided by an embodiment of the present disclosure;

[0030] Figure 5 A flow chart of a method for preparing a light emitting diode provided in an embodiment of the present disclosure;

[0031] Figure 6 A flow chart of another method for preparing a light emitting diode provided in an embodiment of the present disclosure.

[0032] The reference numerals are as follows:

[0033] 100: epitaxial structure; 200: dielectric film reflective layer; 300: silver mirror layer; 400: electrode structure;

[0034] 101: substrate; 102: first semiconductor layer; 103: active layer; 104: second semiconductor layer; 105: transparent conductive layer; 106: first insulating layer; 107: second insulating layer; 108: first electrode; 109: second electrode; 110: first electrode pad; 111: second electrode pad; 112: first insulating layer through hole; 113: second insulating layer through hole; 114: isolation groove; 201: first dielectric film through hole; 202: second dielectric film through hole; A: degree; L: distance;

[0035] 1000: Step structure. DETAILED DESCRIPTION

[0036] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0037] Figure 1 A schematic diagram of the structure of a light emitting diode provided by an embodiment of the present disclosure. Figure 1 , the light emitting diode comprises: an epitaxial structure 100, a dielectric film reflective layer 200 and a silver mirror layer 300;

[0038] The epitaxial structure 100 is provided with a step structure 1000, the step structure 1000 includes a step top surface and a step bottom surface, and the dielectric film reflective layer 200 covers the step structure 1000;

[0039] The dielectric film reflection layer 200 has a first dielectric film through hole 201 on the bottom surface of the step, and the dielectric film reflection layer 200 has a plurality of second dielectric film through holes 202 on the top surface of the step. The silver mirror layer 300 is located on the dielectric film reflection layer 200, and the silver mirror layer 300 is electrically connected to the epitaxial structure 100 through the plurality of second dielectric film through holes 202.

[0040] Figure 2 A top view of the structure of a light emitting diode provided by an embodiment of the present disclosure. Figure 2 The projections of the multiple second dielectric film through holes 202 closest to the projection of the first dielectric film through hole 201 are evenly distributed around the projection of the first dielectric film through hole 201, and the projections of the first dielectric film through hole 201 and the second dielectric film through hole 202 are respectively the projections of the first dielectric film through hole 201 and the second dielectric film through hole 202 on the side of the epitaxial structure 100 away from the dielectric film reflective layer 200.

[0041] In the disclosed embodiment, a first dielectric film hole and a second dielectric film through hole are provided on the dielectric film reflective layer, wherein the first dielectric film through hole is opened corresponding to the bottom surface of the step, and the second dielectric film through hole is a through hole for current to pass through, and a plurality of second dielectric film through holes closest to the first dielectric film through hole are evenly distributed around the first dielectric film through hole, so that current can be injected more evenly, current concentration can be avoided and heat can be reduced, thereby improving the EOS capability of the chip and improving the reliability of the light-emitting diode.

[0042] In the disclosed embodiment, the projection of the first dielectric film through hole 201 is a circle, and the projections of the plurality of second dielectric film through holes 202 closest to the projection of the first dielectric film through hole 201 are distributed on the same circle.

[0043] The circle where the plurality of second dielectric film through holes 202 are located is concentric with the circle of the first dielectric film through holes 201 .

[0044] In this implementation, by arranging a plurality of second dielectric film through holes 202 on a circle, the current can be evenly diffused, current aggregation can be prevented, and the yield of the light emitting diode can be improved.

[0045] In other embodiments, the projection of the first dielectric film through hole 201 and the projection distribution of the plurality of second dielectric film through holes 202 closest to the projection of the first dielectric film through hole 201 may also be other shapes, such as a regular octagon.

[0046] like Figure 2 As shown, except for the multiple second dielectric film through holes 202 closest to the projection of the first dielectric film through hole 201, the projections of the multiple second dielectric film through holes 202 closest to the projection of the first dielectric film through hole 201 among the other second dielectric film through holes 202 can be distributed on the same hexagon.

[0047] This approach can ensure that the current distribution at the plurality of second dielectric film through holes 202 that are second closest to the projection of the first dielectric film through hole 201 is uniform.

[0048] Figure 3 A top view of a light emitting diode through hole arrangement structure provided by an embodiment of the present disclosure. Figure 3 The arc degree A occupied by the projections of two adjacent second dielectric film through holes 202 on the same circle is 45°.

[0049] In this implementation, the distance between two adjacent second dielectric film through holes 202 will not be too large, resulting in excessive dispersion of current diffusion, and the distance between two adjacent second dielectric film through holes 202 will not be too small, resulting in excessive current concentration, resulting in excessive local heat and damage to the light-emitting diode.

[0050] exist Figure 3In the structure shown, the number of the plurality of second dielectric film through holes 202 close to the projection of the first dielectric film through hole 201 is eight.

[0051] Figure 4 A top view of a light emitting diode through hole arrangement structure provided by an embodiment of the present disclosure. Figure 4 The arc degree A occupied by the projections of two adjacent second dielectric film through holes 202 on the same circle is 40°.

[0052] In this implementation, the distance between two adjacent second dielectric film through holes 202 will not be too large, resulting in excessive dispersion of current diffusion, and the distance between two adjacent second dielectric film through holes 202 will not be too small, resulting in excessive current concentration, resulting in excessive local heat and damage to the light-emitting diode.

[0053] exist Figure 4 In the structure shown, the number of the plurality of second dielectric film through holes 202 close to the projection of the first dielectric film through hole 201 is nine.

[0054] In other implementations, the degree A of the arc occupied by the projections of two adjacent second dielectric film through holes 202 on the same circle may also be other degrees, for example, other degrees within 30 to 60 degrees that allow the second dielectric film through holes 202 to be evenly arranged.

[0055] In the embodiment of the present disclosure, the distance L between the projection of the plurality of second dielectric film through holes 202 closest to the projection of the first dielectric film through hole 201 and the projection of the first dielectric film through hole 201 is 20-50 μm.

[0056] like Figure 3 As shown, the distance L here is the distance from the circular shape of the second dielectric film through hole to the edge of the first dielectric film through hole.

[0057] In this implementation, the current will not be too concentrated due to the distance being too close, resulting in excessive local heat and causing damage to the light-emitting diode, nor will the current be too dispersed due to the distance being too far.

[0058] Exemplarily, the distance L between the projections of the plurality of second dielectric film through holes 202 closest to the projection of the first dielectric film through hole 201 and the projection of the first dielectric film through hole 201 is 30 μm.

[0059] In the embodiment of the present disclosure, the radius of the second dielectric film through hole 202 may be 2-6 μm.

[0060] In this implementation, the current will not be too dispersed due to the radius being too large, nor will the current be too concentrated due to the radius being too small, resulting in excessive local heat and damage to the light-emitting diode.

[0061] Exemplarily, the radius of the second dielectric film through hole 202 is 4 μm.

[0062] In the embodiment of the present disclosure, the dielectric film reflective layer 200 may be SiO 2 Layer or SiO 2 With Ti 3 O 5 A stack or other combination formed.

[0063] For example, when the dielectric film reflective layer 200 is a single layer of SiO 2 When depositing the dielectric film reflective layer, a plasma enhanced chemical vapor deposition (PECVD) device is used.

[0064] For example, when the dielectric film reflective layer 200 is SiO 2 With Ti 3 O 5 When forming a stack or other combination, it is prepared by an optical coating machine.

[0065] In the embodiment of the present disclosure, the silver mirror layer 300 can be a combination of one or more metal or alloy layers such as Ag, Ni, Ti, TiW, Al, AlCu, Ti, Ni, Pt, Au, etc., wherein metal Ag is the main structure and plays the role of light reflection and current expansion, and Ni and TiW can prevent the migration and diffusion of metal silver.

[0066] Exemplarily, the silver mirror layer 300 is a stack of Ag, Ni, Ti, TiW, Al, AlCu, Ti, Ni, Pt, and Au.

[0067] like Figure 1 As shown, in the embodiment of the present disclosure, the light emitting diode may further include a substrate 101 , a transparent conductive layer 105 , a first insulating layer 106 , a second insulating layer 107 and an electrode structure 400 .

[0068] In the embodiment of the present disclosure, the substrate 101 may be any one of substrates such as a sapphire substrate, a Si substrate, and a SiC substrate. The embodiment of the present disclosure does not limit the material of the substrate 101.

[0069] The epitaxial structure 100 is located on a substrate 101 .

[0070] Exemplarily, the substrate 101 is a sapphire substrate.

[0071] Exemplarily, the epitaxial structure 100 includes a first semiconductor layer 102 , an active layer 103 , and a second semiconductor layer 104 .

[0072] The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 are provided with a step structure 1000 extending to the first semiconductor layer 102, that is, the bottom surface of the step structure 1000 is located in the first semiconductor layer 102. The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 are also provided with an isolation trench 114 extending to the substrate 101, that is, the bottom of the isolation trench 114 is located in the substrate 101.

[0073] In the embodiment of the present disclosure, the first semiconductor layer 102 may be an N-type semiconductor layer, and the second semiconductor layer 104 may be a P-type semiconductor layer.

[0074] For example, the first semiconductor layer 102 may be made of N-type GaN material, and the second semiconductor layer 104 may be made of P-type GaN material.

[0075] In other embodiments, the first semiconductor layer 102 may be a P-type semiconductor layer, and the second semiconductor layer 104 may be an N-type semiconductor layer.

[0076] In the embodiment of the present disclosure, the active layer 103 may be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well layer.

[0077] In the embodiment of the present disclosure, the first insulating layer 106 covers the silver mirror layer 300 , the isolation trench 114 , the step structure 1000 and the substrate 101 .

[0078] In the embodiment of the present disclosure, the electrode structure 400 includes a first electrode 108 , a second electrode 109 , a first electrode pad 110 and a second electrode pad 111 .

[0079] The first electrode 108 is connected to the silver mirror layer 300 through the first insulating layer through hole 112 at the silver mirror layer 300, and the second electrode 109 is connected to the first semiconductor layer 102 through the first insulating layer through hole 112 at the bottom surface of the step. The second insulating layer 107 covers the first electrode 108, the second electrode 109 and the first insulating layer 106. The first electrode pad 110 is connected to the first electrode 108 through the second insulating layer through hole 113 at the first electrode 108, and the second electrode pad 111 is connected to the second electrode 109 through the second insulating layer through hole 113 at the second electrode 109.

[0080] In the embodiment of the present disclosure, the first electrode 108 and the second electrode 109 may be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0081] Exemplarily, the first electrode 108 and the second electrode 109 are stacked layers of Cr, Al, AlCu, Ti, Ni, Pt, and Au.

[0082] In the embodiment of the present disclosure, the first electrode pad 110 and the second electrode pad 111 may be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt, Au, and AuSn.

[0083] Exemplarily, the first electrode pad 110 and the second electrode pad 111 are stacked layers of Cr, Al, AlCu, Ti, Ni, Pt, Au, and AuSn.

[0084] In the disclosed embodiment, the transparent conductive layer 105 is located on the epitaxial structure 1000 , and the silver mirror layer 300 is connected to the transparent conductive layer 105 through a plurality of second dielectric film through holes 202 .

[0085] In the embodiment of the present disclosure, the transparent conductive layer 105 may be an indium tin oxide (ITO) layer. ITO has good transparency and conductivity. It allows light to pass through while conducting current to form an electrical connection.

[0086] In the disclosed embodiment, the thickness of the transparent conductive layer 105 may be 170 to 250 angstroms. If the transparent conductive layer is too thick, it will absorb light and reduce the light extraction rate. If the transparent conductive layer is too thin, the current expansion performance will be poor.

[0087] In the embodiment of the present disclosure, the first insulating layer 106 and the second insulating layer 107 may be a DBR layer or a SiO 2 layer, DBR layer is SiO 2 With Ti 3 O 5 The formed stack.

[0088] It is worth noting that in the embodiments of the present disclosure, structures may be selectively increased or decreased based on the structure of the above-mentioned light emitting diode, and the present disclosure does not impose any limitation on this.

[0089] Figure 5 A flow chart of a method for preparing a light emitting diode provided in an embodiment of the present disclosure. Figure 5 The method steps include:

[0090] S11, manufacturing an epitaxial structure, wherein the epitaxial structure is provided with a step structure, and the step structure comprises a step top surface and a step bottom surface.

[0091] S12. A dielectric film reflection layer is manufactured on the epitaxial structure, wherein the dielectric film reflection layer covers the step structure; a first dielectric film through hole is opened in the dielectric film reflection layer on the bottom surface of the step, and a plurality of second dielectric film through holes are opened in the dielectric film reflection layer on the top surface of the step; the projections of the plurality of second dielectric film through holes closest to the projection of the first dielectric film through hole are evenly distributed around the projection of the first dielectric film through hole, and the projection of the first dielectric film through hole and the projection of the second dielectric film through hole are respectively the projections of the first dielectric film through hole and the second dielectric film through hole on a side of the epitaxial structure away from the dielectric film reflection layer.

[0092] S13, manufacturing a silver mirror layer on the dielectric film reflective layer, wherein the silver mirror layer is electrically connected to the epitaxial structure through the plurality of second dielectric film through holes.

[0093] In the disclosed embodiment, a first dielectric film hole and a second dielectric film through hole are provided on the dielectric film reflective layer, wherein the first dielectric film through hole is opened corresponding to the bottom surface of the step, and the second dielectric film through hole is a through hole for current to pass through, and a plurality of second dielectric film through holes closest to the first dielectric film through hole are evenly distributed around the first dielectric film through hole, so that current can be injected more evenly, current concentration can be avoided and heat can be reduced, thereby improving the EOS capability of the chip and improving the reliability of the light-emitting diode.

[0094] Figure 6 Another light emitting diode manufacturing method provided by the present disclosure is a flow chart. Figure 6 The method steps include:

[0095] S21. Forming a first semiconductor layer, an active layer, and a second semiconductor layer in sequence on a substrate, wherein the second semiconductor layer, the active layer, and the first semiconductor layer constitute an epitaxial structure.

[0096] The substrate may be any one of a sapphire substrate, a Si substrate, a SiC substrate and the like.

[0097] In one example, step S21 includes:

[0098] The first step is to make the first semiconductor layer.

[0099] In the embodiment of the present disclosure, the first semiconductor layer is N-type GaN.

[0100] The second step is to make the active layer.

[0101] In the embodiment of the present disclosure, the active layer is a multi-quantum well layer, such as an InGaN / GaN multi-quantum well layer.

[0102] The third step is to make the second semiconductor layer.

[0103] In the embodiment of the present disclosure, the second semiconductor layer is P-type GaN.

[0104] In the embodiment of the present disclosure, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on the substrate.

[0105] S22, performing graphic processing on the epitaxial structure to form a step structure and an isolation groove, wherein the step structure includes a step bottom surface and a step top surface.

[0106] In the embodiment of the present disclosure, the top surface of the step structure is located in the second semiconductor layer, and the bottom surface of the step structure is located in the first semiconductor layer. The bottom of the isolation trench is located in the substrate.

[0107] In the disclosed embodiment, the step structure is etched by inductively coupled plasma (ICP).

[0108] S23. Fabricate a transparent conductive layer on the surface of the epitaxial structure.

[0109] In the embodiment of the present disclosure, the transparent conductive layer may be an ITO layer. ITO has excellent transparency and conductivity. It allows light to pass through while conducting current to form an electrical connection.

[0110] In the disclosed embodiment, the thickness of the transparent conductive layer may be 170 to 250 angstroms. If the transparent conductive layer is too thick, it will absorb light and reduce the light extraction rate. If the transparent conductive layer is too thin, the current expansion performance will be poor.

[0111] S24, manufacturing a dielectric film reflective layer on the surface of the epitaxial structure, wherein the dielectric film reflective layer wraps the transparent conductive layer, and a first dielectric film hole and a second dielectric film through hole are opened on the dielectric film reflective layer.

[0112] In the disclosed embodiment, the projections of the plurality of second dielectric film through holes closest to the projection of the first dielectric film through hole are evenly distributed around the projection of the first dielectric film through hole, which can make the current spread more evenly, prevent the current from being easily concentrated, and improve the yield of the light-emitting diode.

[0113] In the embodiment of the present disclosure, the arc degree A occupied by the projections of two adjacent through holes of the second dielectric film on the same circle is 45°.

[0114] In this implementation, the distance between two adjacent through holes of the second dielectric film will not be too large, resulting in excessive dispersion of current diffusion, and the distance between two adjacent through holes of the second dielectric film will not be too small, resulting in excessive current concentration, excessive local heat, and damage to the light-emitting diode.

[0115] In the embodiment of the present disclosure, the number of the plurality of second dielectric film through holes close to the projection of the first dielectric film through hole is eight.

[0116] In the embodiment of the present disclosure, the degree A of the arc occupied by the projections of two adjacent through holes of the second dielectric film on the same circle may also be 40°.

[0117] In this implementation, the distance between two adjacent through holes of the second dielectric film will not be too large, resulting in excessive dispersion of current diffusion, and the distance between two adjacent through holes of the second dielectric film will not be too small, resulting in excessive current concentration, excessive local heat, and damage to the light-emitting diode.

[0118] In the embodiment of the present disclosure, the number of the plurality of second dielectric film through holes close to the projection of the first dielectric film through hole is nine.

[0119] In other implementations, the degree of the arc occupied by the projections of two adjacent through holes of the second dielectric film on the same circle may also be other degrees, for example, other degrees within 30 to 60 degrees that allow the through holes of the second dielectric film to be evenly arranged.

[0120] In the embodiment of the present disclosure, the distance between the projections of the plurality of second dielectric film through holes closest to the projection of the first dielectric film through hole and the projection of the first dielectric film through hole is 20-50 μm.

[0121] In this implementation, the current will not be too concentrated due to the distance being too close, resulting in excessive local heat and causing damage to the light-emitting diode, nor will the current be too dispersed due to the distance being too far.

[0122] Exemplarily, the distance between the projections of the plurality of second dielectric film through holes closest to the projection of the first dielectric film through hole and the projection of the first dielectric film through hole is 30 μm.

[0123] In the embodiment of the present disclosure, the radius of the through hole of the second dielectric film may be 2-6 μm.

[0124] In this implementation, the current will not be too dispersed due to the radius being too large, nor will the current be too concentrated due to the radius being too small, resulting in excessive local heat and damage to the light-emitting diode.

[0125] Exemplarily, the radius of the through hole in the second dielectric film is 4 μm.

[0126] In the embodiment of the present disclosure, the dielectric film reflective layer may be SiO 2 Layer or SiO 2 With Ti 3 O 5 A stack or other combination formed.

[0127] For example, when the dielectric film reflective layer is a single layer of SiO 2When depositing the dielectric film reflective layer, a plasma enhanced chemical vapor deposition (PECVD) device is used.

[0128] For example, when the dielectric film reflective layer is SiO 2 With Ti 3 O 5 When forming a stack or other combination, it is prepared by an optical coating machine.

[0129] In the disclosed embodiment, the first dielectric film hole and the second dielectric film through hole are manufactured by etching, ICP etching or a combination of ICP etching and etching.

[0130] S25. A silver mirror layer is made on the surface of the dielectric film reflective layer, and the silver mirror layer is connected to the transparent conductive layer through a through hole.

[0131] In the embodiments of the present disclosure, the silver mirror layer can be a combination of one or more metal or alloy layers such as Ag, Ni, Ti, TiW, Al, AlCu, Ti, Ni, Pt, Au, etc., wherein metal Ag is the main structure and plays the role of light reflection and current expansion, and Ni and TiW can prevent the migration and diffusion of metal silver.

[0132] Exemplarily, the silver mirror layer is a stack of Ag, Ni, Ti, TiW, Al, AlCu, Ti, Ni, Pt, and Au.

[0133] S26, making a first insulating layer and opening a first insulating layer through hole, the first insulating layer covering the silver mirror layer, the isolation groove and the step top surface and the step bottom surface of the step structure.

[0134] In the embodiment of the present disclosure, the first insulating layer may be a distributed Bragg reflector DBR layer or a SiO 2 layer, DBR layer is SiO 2 With Ti 3 O 5 The formed stack.

[0135] In the embodiment of the present disclosure, the first insulating layer respectively opens third through holes at the silver mirror layer and at the top surface of the step structure.

[0136] In the disclosed embodiment, the first insulating layer through hole is manufactured by etching or corroding.

[0137] S27, manufacturing a first electrode and a second electrode.

[0138] In the embodiment of the present disclosure, the first electrode and the second electrode may be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0139] Exemplarily, the first electrode and the second electrode are stacked layers of Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0140] S28, manufacturing a second insulating layer and opening a through hole in the second insulating layer, wherein the second insulating layer covers the first electrode, the second electrode and the first insulating layer.

[0141] In the embodiment of the present disclosure, the second insulating layer may be a distributed Bragg reflector, DBR layer or SiO 2 layer, DBR layer is SiO 2 With Ti 3 O 5 The formed stack.

[0142] In the embodiment of the present disclosure, the second insulating layer has second insulating layer through holes at the first electrode and the second electrode respectively, the first electrode pad is connected to the first electrode through the second insulating layer through hole at the first electrode, and the second electrode pad is connected to the second electrode through the second insulating layer through hole at the second electrode.

[0143] In the embodiment of the present disclosure, the first through hole and the second through hole are manufactured by etching or corroding.

[0144] S29, manufacturing a first electrode pad and a second electrode pad.

[0145] In the embodiment of the present disclosure, the first electrode pad and the second electrode pad may be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt, Au and AuSn.

[0146] Exemplarily, the first electrode pad and the second electrode pad are stacked layers of Cr, Al, AlCu, Ti, Ni, Pt, Au, and AuSn.

[0147] The above description is only an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: an epitaxial structure (100), a dielectric film reflective layer (200) and a silver mirror layer (300); The epitaxial structure (100) is provided with a step structure (1000), the step structure (1000) comprises a step top surface and a step bottom surface, and the dielectric film reflective layer (200) covers the step structure (1000); The dielectric film reflection layer (200) is provided with a first dielectric film through hole (201) on the bottom surface of the step, the dielectric film reflection layer (200) is provided with a plurality of second dielectric film through holes (202) on the top surface of the step, the silver mirror layer (300) is located on the dielectric film reflection layer (200), and the silver mirror layer (300) is electrically connected to the epitaxial structure (100) through the plurality of second dielectric film through holes (202); The projections of a plurality of the second dielectric film through holes (202) closest to the projection of the first dielectric film through hole (201) are evenly distributed around the projection of the first dielectric film through hole (201), and the projection of the first dielectric film through hole (201) and the projection of the second dielectric film through hole (202) are respectively the projections of the first dielectric film through hole (201) and the second dielectric film through hole (202) on a side of the epitaxial structure (100) away from the dielectric film reflective layer (200).

2. The light emitting diode according to claim 1, characterized in that: The projection of the first dielectric film through hole (201) is circular, and the projections of a plurality of the second dielectric film through holes (202) closest to the projection of the first dielectric film through hole (201) are distributed on the same circle.

3. The light emitting diode according to claim 2, characterized in that: The degree (A) of the arc occupied by the projections of two adjacent through holes (202) of the second dielectric film on the same circle is 45°.

4. The light emitting diode according to claim 2, characterized in that: The degree (A) of the arc occupied by the projections of two adjacent through holes (202) of the second dielectric film on the same circle is 40°.

5. The light emitting diode according to any one of claims 1 to 4, characterized in that: The distance (L) between the projection of the plurality of second dielectric film through holes (202) closest to the projection of the first dielectric film through hole (201) and the projection of the first dielectric film through hole (201) is 20 to 50 μm.

6. The light emitting diode according to any one of claims 1 to 4, characterized in that: The radius of the second dielectric film through hole (202) is 2-6 μm.

7. A method for preparing a light emitting diode, characterized in that: The method comprises: Manufacturing an epitaxial structure, wherein the epitaxial structure is provided with a step structure, wherein the step structure comprises a step top surface and a step bottom surface; A dielectric film reflection layer is fabricated on the epitaxial structure, and the dielectric film reflection layer covers the step structure; the dielectric film reflection layer is provided with a first dielectric film through hole on the bottom surface of the step, and the dielectric film reflection layer is provided with a plurality of second dielectric film through holes on the top surface of the step; the projections of the plurality of second dielectric film through holes closest to the projection of the first dielectric film through hole are evenly distributed around the projection of the first dielectric film through hole, and the projections of the first dielectric film through hole and the second dielectric film through hole are respectively the projections of the first dielectric film through hole and the second dielectric film through hole on a side of the epitaxial structure away from the dielectric film reflection layer; A silver mirror layer is manufactured on the dielectric film reflective layer, and the silver mirror layer is electrically connected to the epitaxial structure through the plurality of second dielectric film through holes.

8. The method according to claim 7, characterized in that The projection of the through hole of the first dielectric film is circular, and the projections of a plurality of through holes of the second dielectric film that are closest to the projection of the through hole of the first dielectric film are distributed on the same circle.

9. The method according to claim 8, characterized in that The arc occupied by the projections of two adjacent through holes of the second dielectric film on the same circle is 45°.

10. The method according to claim 8, characterized in that The arc occupied by the projections of two adjacent through holes of the second dielectric film on the same circle is 40°.

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