Electronic device including organic photodetector

Abstract

Provided is an electronic device including an organic photodetector and a light emitting device, in which a mean square roughness (Rq) value of a surface of an active layer of the organic photodetector in a direction in contact with an electron transport region is 9 nm or more.

Description

[0001] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2023-0097795 filed on July 26, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] One or more embodiments relate to an electronic device including an organic photodetector. Background Art

[0003] Optoelectronic devices are devices that convert light into electrical signals and include photodiodes and phototransistors. Optoelectronic devices can be applied to image sensors, solar cells, organic light-emitting devices, etc.

[0004] Today, silicon is commonly used in photodiodes. However, as the size of pixels decreases, the absorption area may decrease, thus deteriorating the sensitivity. Therefore, organic materials that can replace silicon are being studied.

[0005] Since organic materials have a large extinction coefficient and can selectively absorb light in a specific wavelength region according to their molecular structure, organic materials can replace both photodiodes and color filters, which can promote improvements in sensitivity and high integration.

[0006] An organic photodetector including such an organic material may be applied to, for example, a display device or an image sensor.

[0007] An in-cell-type organic photodetector refers to a fusion device in which an organic light-emitting device and an organic photodetector are arranged in parallel. Summary of the invention

[0008] One or more embodiments include an electronic device including an organic photodetector having improved efficiency.

[0009] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the disclosed presented embodiments.

[0010] According to one or more embodiments, an electronic device includes:

[0011] a substrate including a photodetection region and an emission region;

[0012] an organic photodetector disposed on the photodetection region; and

[0013] A light emitting device is arranged on the emission area,

[0014] The organic photodetector includes: a first pixel electrode; a counter electrode facing the first pixel electrode; and a hole transport region, an activation layer, and an electron transport region sequentially arranged between the first pixel electrode and the counter electrode.

[0015] The light emitting device includes: a second pixel electrode; a counter electrode facing the second pixel electrode; and a hole transport region, an emission layer, and an electron transport region sequentially arranged between the second pixel electrode and the counter electrode.

[0016] The first pixel electrode and the activation layer are arranged in the photodetection region,

[0017] The second pixel electrode and the emission layer are arranged in the emission area,

[0018] The hole transport region, the electron transport region and the counter electrode are arranged throughout the photodetection region and the emission region, and

[0019] The electron transport region and the active layer of the organic photodetector are in contact with each other, and the mean square roughness (R q ) value is 9nm or greater.

[0020] In an embodiment, the hole transport region may include a hole injection layer, a hole transport layer, an electron blocking layer, an auxiliary layer, or any combination thereof.

[0021] In an embodiment, the electron transport region may include a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0022] In an embodiment, the activation layer may include a layer including a p-type semiconductor compound and a layer including an n-type semiconductor compound, and

[0023] The layer including the n-type semiconductor compound may be in contact with the electron transport region.

[0024] In an embodiment, the electron transport region of the organic photodetector may include a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof, and

[0025] A layer of the electron transport region may be in contact with the active layer.

[0026] In an embodiment, the electron transport region of the organic photodetector may include a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof, and

[0027] The mean square roughness (R q ) value can be 9nm or greater.

[0028] In an embodiment, the mean square roughness (R q ) values ​​can all be 9nm or greater.

[0029] In an embodiment, the mean square roughness (R q ) values ​​can all be less than 5nm.

[0030] In an embodiment, the active layer may be a mixed layer including a p-type semiconductor compound and an n-type semiconductor compound.

[0031] In an embodiment, the activation layer may include a layer including a p-type semiconductor compound and a layer including an n-type semiconductor compound.

[0032] The layer containing the p-type semiconductor compound and the layer containing the n-type semiconductor compound are in direct contact with each other, and

[0033] The mean square roughness (R q ) value can be less than 5nm.

[0034] In an embodiment, the electron transport region and the emission layer of the light emitting device may be in contact with each other, and the mean square roughness (R q ) value can be less than 5nm.

[0035] In an embodiment, the activation layer may include a layer including an n-type semiconductor compound, and

[0036] The layer including the n-type semiconductor compound may have a lowest unoccupied molecular orbital (LUMO) energy value greater than -4.50 eV and less than -3.20 eV.

[0037] In an embodiment, the activation layer may include a layer including a p-type semiconductor compound and a layer including an n-type semiconductor compound.

[0038] The layer including the n-type semiconductor compound may be in contact with the electron transport region disposed between the first pixel electrode and the counter electrode, and

[0039] A difference between a LUMO energy value of a layer in contact with the layer containing the n-type semiconductor compound in the electron transport region and a LUMO energy value of the layer containing the n-type semiconductor compound may be 0.3 eV or more.

[0040] In an embodiment, a LUMO energy value of a layer in the electron transport region that is in contact with the layer including the n-type semiconductor compound may be greater than a LUMO energy value of the layer including the n-type semiconductor compound.

[0041] In an embodiment, a layer in the electron transport region that is in contact with the layer including the n-type semiconductor compound may be a buffer layer or an electron transport layer.

[0042] In an embodiment, the electron transport region arranged in the entire photodetection region and the emission region may include an electron transport layer,

[0043] The mean square roughness (R q ) values ​​can all be less than 5nm, and

[0044] The mean square roughness (R q ) values ​​can all be 9nm or greater.

[0045] In an embodiment, the thickness of the electron transport layer of the light-emitting device may be about to about within the range.

[0046] In an embodiment, the activation layer may include a p-type semiconductor compound, and

[0047] The p-type semiconductor compound may include a compound represented by Formula 1:

[0048] Formula 1

[0049]

[0050] Here, the details of Formula 1 will be described below.

[0051] In an embodiment, the p-type semiconductor compound may include one of the following compounds:

[0052]

[0053] In an embodiment, the activation layer may include an n-type semiconductor compound, and the n-type semiconductor compound may include a compound represented by Formula 2 or Formula 3:

[0054] Formula 2

[0055]

[0056] Formula 3

[0057]

[0058] Among them, the details of Formula 2 and Formula 3 will be described below.

[0059] In an embodiment, the n-type semiconductor compound may include one of the following compounds:

[0060]

[0061] BRIEF DESCRIPTION OF THE DRAWINGS

[0062] The above and other aspects, features and advantages of certain disclosed embodiments will become more apparent through the following description in conjunction with the accompanying drawings, in which:

[0063] Figure 1 is a schematic diagram of an organic photodetector included in an electronic device according to an embodiment;

[0064] Figure 2 yes Figure 1 Schematic enlargement of the oval portion in FIG.

[0065] Figure 3 is a schematic diagram of an electronic device according to an embodiment;

[0066] Figure 4 is a schematic diagram of an electronic device according to an embodiment; and

[0067] Figure 5A and Figure 5B Each is a view of an electronic device according to an embodiment. DETAILED DESCRIPTION

[0068] Now will refer to embodiment in detail, the example of embodiment is shown in the accompanying drawings, wherein the same reference numerals refer to the same element from time to time. In this respect, the embodiment presented can have different forms, and should not be construed as being limited to the description set forth herein. Therefore, the embodiment is described below only by reference to the accompanying drawings to explain the aspects of this specification. As used herein, the term "and / or" includes any combination and all combinations of one or more of the related listed items. Throughout the disclosure, the statement "at least one (kind / person) of a, b and c" represents only a, only b, only c, both a and b, both a and c, both b and c, all of a, b and c or their variations.

[0069] Because the disclosure can have various modified embodiments, the embodiments are shown in the drawings and described in the detailed description. When referring to the embodiments described with reference to the drawings, the effects and characteristics of the disclosure and their implementation methods will be obvious. However, the disclosure can be implemented in many different forms and should not be interpreted as being limited to the embodiments set forth herein.

[0070] An expression used in the singular includes an expression in the plural unless it has an apparently different meaning in the context.

[0071] It will be understood that the terms “comprises,” “comprising,” “having,” etc. used herein indicate the presence of stated features or components, but do not preclude the presence or addition of one or more other features or components.

[0072] It will be understood that when a layer, region or component is referred to as being "on" or "to" another layer, region or component, it can be directly formed on or indirectly formed on the other layer, region or component. That is, for example, intervening layers, regions or components may be present.

[0073] In the description with reference to the accompanying drawings, the same or corresponding components are assigned the same or like reference numerals, and overlapping descriptions thereof will be omitted.

[0074] For the convenience of explanation, the sizes of components in the drawings may be exaggerated. In other words, since the sizes and thicknesses of components in the drawings are arbitrarily shown for the convenience of explanation, the following embodiments are not limited thereto.

[0075] The in-cell type organic photodetector refers to an electronic device in which an organic light-emitting device and an organic photodetector are arranged in parallel. In the electronic device, a hole transport region, an electron transport region, and a counter electrode may be arranged together in the entire photodetection region and the emission region.

[0076] [ Figure 1 and Figure 2 Description]

[0077] Figure 1 is a schematic cross-sectional view of an organic photodetector 10 included in an electronic device according to an embodiment.

[0078] The electron transport region of the organic photodetector 10 may include a structure in which a buffer layer 150, a hole blocking layer (not shown), an electron transport layer 160, an electron injection layer (not shown), or any combination thereof is disposed on the activation layer 140. For example, the electron injection layer may be disposed between the second electrode 170 and the electron transport layer 160.

[0079] Reference Figure 1 According to an embodiment, the organic photodetector 10 included in the electronic device may include: a first electrode 110; a second electrode 170, facing the first electrode 110; an activation layer 140, arranged between the first electrode 110 and the second electrode 170; an electron injection layer (not shown), an electron transport layer 160 and a buffer layer 150, arranged between the activation layer 140 and the second electrode 170; and a hole injection layer 120, a hole transport layer 131 and an optical auxiliary layer 132, arranged between the first electrode 110 and the activation layer 140.

[0080] The activation layer 140 may generate excitons by receiving light from the outside and divide the generated excitons into holes and electrons. The activation layer 140 may include a p-type semiconductor compound (donor compound) and an n-type semiconductor compound (acceptor compound).

[0081] The optical auxiliary layer 132 may increase light introduction efficiency by compensating for an optical resonance distance according to a wavelength of light introduced into the active layer 140 .

[0082] exist Figure 1 In some cases, for example, the electron injection layer (not shown), the buffer layer 150, and the hole injection layer 120 may each be independently present or absent.

[0083] The activation layer 140 may include a p-type semiconductor compound and an n-type semiconductor compound. For example, the activation layer 140 may be a mixed layer including a p-type semiconductor compound and an n-type semiconductor compound, or may include a layer (not shown) including a p-type semiconductor compound and a layer (not shown) including an n-type semiconductor compound. When the activation layer 140 includes a layer (not shown) including a p-type semiconductor compound and a layer (not shown) including an n-type semiconductor compound, the layer (not shown) including the p-type semiconductor compound and the layer (not shown) including the n-type semiconductor compound may be in direct contact with each other, the layer including the n-type semiconductor compound may face the second electrode 170, and the layer including the p-type semiconductor compound may face the first electrode 110. The layer including the p-type semiconductor compound and the layer including the n-type semiconductor compound may form a PN junction. Excitons may be effectively separated into holes and electrons by light-induced charge separation occurring at the interface between these layers.

[0084] When the active layer 140 is a mixed layer, excitons can be generated within the diffusion length from the p-type semiconductor compound-n-type semiconductor compound interface, and thus the organic photodetector 10 can have improved efficiency. The ratio of the p-type semiconductor compound to the n-type semiconductor compound can be, for example, in the range of about 10:90 to about 90:10 (weight ratio).

[0085] In an embodiment, the activation layer 140 may include a layer including an n-type semiconductor compound, and a lowest unoccupied molecular orbital (LUMO) energy value of the layer including the n-type semiconductor compound may be greater than −4.50 eV and less than −3.20 eV.

[0086] For example, the activation layer 140 may include a layer composed of an n-type semiconductor compound, and the LUMO energy value of the layer composed of the n-type semiconductor compound may be greater than -4.50 eV and less than -3.20 eV. When the LUMO energy value of the layer composed of the n-type semiconductor compound in the activation layer 140 is within the above range, the organic photodetector 10 may have excellent efficiency.

[0087] In an embodiment, the activation layer 140 may include a layer including a p-type semiconductor compound and a layer including an n-type semiconductor compound, the layer including the n-type semiconductor compound may contact the electron transport region disposed between the first pixel electrode and the counter electrode, and

[0088] A difference between a LUMO energy value of a layer in contact with the layer containing the n-type semiconductor compound in the electron transport region and a LUMO energy value of the layer containing the n-type semiconductor compound may be 0.3 eV or more.

[0089] For example, the LUMO energy value of the layer in the electron transport region that is in contact with the layer including the n-type semiconductor compound may be greater than the LUMO energy value of the layer including the n-type semiconductor compound.

[0090] For example, a layer in the electron transport region that is in contact with the layer including the n-type semiconductor compound may be the buffer layer 150 or the electron transport layer 160 .

[0091] When the difference between the LUMO energy value of the layer in the electron transport region that is in contact with the layer containing the n-type semiconductor compound (e.g., the buffer layer 150 or the electron transport layer 160) and the LUMO energy value of the layer containing the n-type semiconductor compound is 0.3 eV or more, tunneling of electrons may occur. In this case, according to the present disclosure, the layer in the electron transport region that is in contact with the layer containing the n-type semiconductor compound (e.g., the buffer layer 150 or the electron transport layer 160) has a mean square roughness (R ) of 9 nm. q ) value and has an uneven surface. When the layer in the electron transport region that contacts the layer containing the n-type semiconductor compound (for example, the buffer layer 150 or the electron transport layer 160) has a mean square roughness (R q ) value and thus have a smooth surface, it may be difficult for electron tunneling to occur. As used herein, "rough" or "uneven" means that there is more texture on the surface than "smooth".

[0092] In an embodiment, the activation layer 140 may be a mixed layer composed of a p-type semiconductor compound and an n-type semiconductor compound. For example, the activation layer 140 may be composed of a layer composed of a p-type semiconductor compound and a layer composed of an n-type semiconductor compound.

[0093] In an embodiment, the p-type semiconductor compound may include a compound represented by Formula 1:

[0094] Formula 1

[0095]

[0096] Among them, in formula 1,

[0097] X 1 Can be O, S, Se, Te, SO, SO 2 , CR 11 R 12 or SiR 13 R 14 ,

[0098] A may be unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0099] R 1 , R 2 and R 3 , R 11 , R 12 , R 13 and R 14 and Ar 1 and Ar 2 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R 10a C 1 -C 20 Alkyl, unsubstituted or substituted with at least one R 10a C 1 -C 20 Alkoxy, unsubstituted or substituted with at least one R 10a C 3 -C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group, -Si(Q 1 )(Q 2 )(Q 3 )、-N(Q 1 )(Q 2 )、-B(Q 1 )(Q 2 )、-C(=O)(Q 1 )、-S(=O) 2 (Q 1 ) or -P(=O)(Q 1 )(Q 2 ),

[0100] R 10a It can be:

[0101] deuterium, -F, -Cl, -Br, -I, hydroxy, cyano or nitro;

[0102] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl, C 2 -C 60 Heteroarylalkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O) 2 (Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl or C 1 -C 60 Alkoxy;

[0103] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl, C 1 -C 60 Alkoxy, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl, C2 -C 60 Heteroarylalkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O) 2 (Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl or C 2 -C 60 heteroarylalkyl; or

[0104] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ),

[0105] Q 1 To Q 3 , Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C 1 -C 60 Alkyl; C 2 -C 60 Alkenyl; C 2 -C 60 Alkynyl; C 1 -C60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C 1 -C 60 Alkyl, C 1 -C 60 C alkoxy, phenyl, biphenyl or any combination thereof 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 7 -C 60 Arylalkyl or C 2 -C 60 heteroarylalkyl, and

[0106] R 1 , R 2 and R 3 , R 11 , R 12 , R 13 and R 14 and Ar 1 and Ar 2 Adjacent substituents therein may optionally combine with each other to form a ring.

[0107] In an embodiment, the p-type semiconductor compound may include one of the following compounds:

[0108]

[0109] In an embodiment, the n-type semiconductor compound may include a compound represented by Formula 2 or Formula 3:

[0110] Formula 2

[0111]

[0112] Formula 3

[0113]

[0114] Among them, in formula 2,

[0115] X 111 and X 112 can be independently O or NR 119 ,and

[0116] R 111 , R 112 , R 113 , R 114 , R 115 , R 116 , R 117 , R 118 and R 119can be independently hydrogen, deuterium, halogen, cyano, nitro, hydroxyl, unsubstituted or substituted with at least one R 10a C 1 -C 30 Alkyl, unsubstituted or substituted with at least one R 10a C 6 -C 30 Aryl, unsubstituted or substituted with at least one R 10a C 3 -C 30 heteroaryl or any combination thereof,

[0117] Among them, in formula 3,

[0118] X 121 and X 122 can be independently O or NR 125 ,and

[0119] R 121 , R 122 , R 123 , R 124 and R 125 can be independently hydrogen, deuterium, halogen, cyano, nitro, hydroxyl, unsubstituted or substituted with at least one R 10a C 1 -C 30 Alkyl, unsubstituted or substituted with at least one R 10a C 6 -C 30 Aryl, unsubstituted or substituted with at least one R 10a C 3 -C 30 heteroaryl or any combination thereof,

[0120] Among them, in formula 2 and formula 3,

[0121] R 10a It can be:

[0122] deuterium, -F, -Cl, -Br, -I, hydroxy, cyano or nitro;

[0123] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 1 -C 60 Heteroaryloxy, C 1-C 60 Heteroarylthio, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O) 2 (Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl or C 1 -C 60 Alkoxy;

[0124] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl, C 1 -C 60 Alkoxy, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 1 -C 60 Heteroaryloxy, C 1 -C 60 Heteroarylthio, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O) 2 (Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 1 -C 60 Heteroaryloxy or C 1 -C 60 heteroarylthio; or

[0125] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ),and

[0126] Q 11 , Q 12 and Q 13 , Q 21 , Q 22 and Q 23 and Q 31 To Q 33 can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C 1 -C 60 Alkyl; C 2 -C 60 Alkenyl; C 2 -C 60 Alkynyl; C 1 -C 60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C 1 -C 60 Alkyl, C 1 -C 60 C alkoxy, phenyl, biphenyl or any combination thereof 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 7 -C 60 Arylalkyl or C 2 -C 60 Heteroarylalkyl.

[0127] In an embodiment, the n-type semiconductor compound may include one of the following compounds:

[0128]

[0129]

[0130] The total thickness of the activation layer 140 may be about to about (For example, about to about When the activation layer 140 includes a layer including a p-type semiconductor compound and a layer including an n-type semiconductor compound, the thickness of the layer including the p-type semiconductor compound and the layer including the n-type semiconductor compound may be independently within a range of about 100 Å to 200 Å. to about (For example, about to about ) within the range of .

[0131] When the thickness of the active layer 140 is within the above range, incident light absorption may be effective.

[0132] One of the first electrode 110 and the second electrode 170 may be an anode, and the other may be a cathode. For example, the first electrode 110 may be an anode, and the second electrode 170 may be a cathode.

[0133] The hole transport region of the organic photodetector 10 may include a structure in which a hole injection layer 120, a hole transport layer 131, an electron blocking layer (not shown), an optical auxiliary layer 132, or any combination thereof is disposed on the first electrode 110. For example, the hole injection layer 120 may be disposed between the first electrode 110 and the hole transport layer 131.

[0134] For example, the hole transport layer 131 may include a layer including a p-dopant (not shown). The layer including the p-dopant may directly contact the first electrode 110 .

[0135] The p dopant will be described below.

[0136] In an embodiment, the electron transport region of the organic photodetector 10 and the activation layer 140 may contact each other, and the mean square roughness (R q ) value can be 9nm or greater.

[0137] For example, a layer containing an n-type semiconductor compound (acceptor compound) may be in contact with the electron transport region.

[0138] For example, one layer of the electron transport region may be in contact with the activation layer 140. In this case, for example, the activation layer 140 may be a mixed layer composed of a p-type semiconductor compound and an n-type semiconductor compound.

[0139] For example, the mean square roughness (R q ) value may be 9 nm or greater. For example, the mean square roughness (R q ) values ​​can all be 9nm or greater.

[0140] For example, the mean square roughness (R q ) values ​​may be 9 nm or more. That is, the mean square roughness (R q ) value and the mean square roughness (R q ) values ​​can all be 9nm or greater.

[0141] On the other hand, when the activation layer 140 includes a layer including a p-type semiconductor compound (donor compound) and a layer including an n-type semiconductor compound (acceptor compound), the layer including the p-type semiconductor compound and the layer including the n-type semiconductor compound are in direct contact with each other.

[0142] The mean square roughness (R q ) value can be less than 5nm.

[0143] When the mean square roughness (R q ) value is 9nm or greater, the surface can be characterized as rough or uneven. q ) value is less than 5 nm, the surface can be characterized as smooth.

[0144] That is, in the organic photodetector 10 included in the electronic device according to the embodiment, all surfaces from the point where the mixed layer contacts the electron transport region to the second electrode 170 may have a mean square roughness (R q )value.

[0145] For example, the mean square roughness (R q ) value can be in the range of about 9 nm to about 20 nm. The mean square roughness (R q ) value can be greater than 0nm and less than 5nm.

[0146] Figure 2 yes Figure 1Schematic enlargement of the oval part in FIG.

[0147] Reference Figure 2 The activation layer 140 may include a layer including a p-type semiconductor compound (donor compound) and a layer including an n-type semiconductor compound (acceptor compound), and the mean square roughness (R q ) value can be 9nm or greater.

[0148] Reference Figure 2 , the mean square roughness (R q ) values ​​can all be 9nm or greater.

[0149] Reference Figure 2 , the mean square roughness (R q ) value can be less than 5nm.

[0150] Reference Figure 2 , the mean square roughness (R q ) values ​​can all be 9nm or greater.

[0151] Reference Figure 2 , it can be seen that the distance from the surface of the layer containing the n-type semiconductor compound (acceptor compound) to the counter electrode (cathode) is can be significantly reduced, thus facilitating the tunneling of electrons (→).

[0152] [First electrode 110]

[0153] exist Figure 1 In the embodiment, the substrate may be additionally arranged below the first electrode 110 or on the second electrode 170. In an embodiment, as the substrate, a glass substrate or a plastic substrate may be used. In one or more embodiments, the substrate may be a flexible substrate and may include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0154] The first electrode 110 may be formed by, for example, depositing or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, a high work function material may be used as the material for forming the first electrode 110.

[0155] The first electrode 110 may be a reflective electrode, a semi-transmissive electrode or a transmissive electrode. In an embodiment, when the first electrode 110 is a transmissive electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO), or any combination thereof may be used as a material for forming the first electrode 110. In one or more embodiments, when the first electrode 110 is a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof may be used as a material for forming the first electrode 110.

[0156] The first electrode 110 may have a single-layer structure consisting of a single layer or a multi-layer structure including multiple layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0157] [Charge assist layer]

[0158] The organic photodetector 10 according to the embodiment may include a charge auxiliary layer that facilitates migration of holes and electrons from the active layer 140 .

[0159] The charge auxiliary layer may include a hole injection layer 120 and a hole transport layer 131 that facilitate hole migration, and may include an electron transport layer 160 and an electron injection layer (not shown) that facilitate electron migration.

[0160] [Hole transport region]

[0161] The charge auxiliary layer disposed between the first electrode 110 and the activation layer 140 may be collectively referred to as a hole transport region.

[0162] The hole transport region may include a hole injection layer 120 , a hole transport layer 131 , and an electron blocking layer.

[0163] The hole transport region may include a hole transport material. For example, the hole transport material may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0164] Formula 201:

[0165]

[0166] Formula 202:

[0167]

[0168] Among them, in equation 201 and equation 202,

[0169] L 201 , L202 , L 203 and L 204 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0170] L 205 Can be *-O-*', *-S-*', *-N(Q 201 )-*', unsubstituted or substituted with at least one R 10a C 1 -C 20 Alkylene, unsubstituted or substituted with at least one R 10a C 2 -C 20 Alkenylene, unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0171] xa1, xa2, xa3 and xa4 may each independently be an integer from 0 to 5,

[0172] xa5 can be an integer from 1 to 10,

[0173] R 201 , R 202 , R 203 and R 204 and Q 201 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0174] R 201 and R 202 may be optionally substituted via a single bond, unsubstituted or substituted with at least one R 10a C 1 -C 5 The alkylene group is either unsubstituted or substituted with at least one R 10a C 2 -C 5The alkenylene groups are connected to each other to form an unsubstituted or substituted group having at least one R 10a C 8 -C 60 Polycyclic groups (e.g., carbazole groups, etc.) (e.g., compound HT16, etc.),

[0175] R 203 and R 204 may be optionally substituted via a single bond, unsubstituted or substituted with at least one R 10a C 1 -C 5 The alkylene group is either unsubstituted or substituted with at least one R 10a C 2 -C 5 The alkenylene groups are connected to each other to form an unsubstituted or substituted group having at least one R 10a C 8 -C 60 Polycyclic groups, and

[0176] na1 can be an integer from 1 to 4.

[0177] For example, each of Formula 201 and Formula 202 may include at least one of the groups represented by Formula CY201 to Formula CY217:

[0178]

[0179] Among them, in formula CY201 to formula CY217, R 10b and R 10c Can be compared with reference R 10a Same as described, CY 201 To Ring CY 204 can all be independently C 3 -C 20 Carbocyclic or C 1 -C 20 heterocyclic group, and at least one hydrogen in Formula CY201 to Formula CY217 may be unsubstituted or substituted with R 10a .

[0180] In the embodiment, in Formula CY201 to Formula CY217, ring CY 201 To Ring CY 204 Each of them may independently be a benzene group, a naphthyl group, a phenanthrene group or an anthracene group.

[0181] In one or more embodiments, each of Formula 201 and Formula 202 may include at least one of the groups represented by Formula CY201 to Formula CY203.

[0182] In one or more embodiments, Formula 201 may include at least one of the groups represented by Formulas CY201 to CY203 and at least one of the groups represented by Formulas CY204 to CY217.

[0183] In one or more embodiments, in Formula 201, xa1 may be 1, R 201 may be one of the groups represented by formula CY201 to formula CY203, xa2 may be 0, and R 202 It may be one of the groups represented by Formula CY204 to Formula CY207.

[0184] In one or more embodiments, each of Formula 201 and Formula 202 may not include the group represented by Formula CY201 to Formula CY203.

[0185] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formula CY201 to Formula CY203, and may include at least one of the groups represented by Formula CY204 to Formula CY217.

[0186] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formula CY201 to Formula CY217.

[0187] For example, the hole transport material may include: one of compounds HT1 to HT46; m-MTDATA; TDATA; 2-TNATA; NPB (NPD); β-NPB; TPD; spiro-TPD; spiro-NPB; methylated NPB; TAPC; HMTPD; 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA); polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA); poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS); polyaniline / camphorsulfonic acid (PANI / CSA); polyaniline / poly(4-styrenesulfonate) (PANI / PSS); or any combination thereof:

[0188]

[0189]

[0190]

[0191]

[0192]

[0193] The thickness of the hole transport region can be about to about (For example, about to about ). When the hole transport region includes the hole injection layer 120, the hole transport layer 131, or any combination thereof, the thickness of the hole injection layer 120 may be in the range of about to about (For example, about to about ), the thickness of the hole transport layer 131 may be about to about (For example, about to about When the thickness of the hole transport region, the hole injection layer 120, and the hole transport layer 131 are within the above range, satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage.

[0194] The electron blocking layer may prevent electrons from leaking from the activation layer 140 into the hole transport region. The above-mentioned hole transport material may be included in the electron transport layer 160 and the electron blocking layer.

[0195] [p dopant]

[0196] In addition to the above materials, the hole transport region may further include a charge generating material for improving conductive properties. The charge generating material may be dispersed uniformly or non-uniformly in the hole transport region (eg, in the form of a single layer composed of the charge generating material).

[0197] The charge generating material may be, for example, a p-dopant.

[0198] For example, the LUMO level of the p-dopant may be -3.5 eV or less.

[0199] In an embodiment, the p-dopant may include a quinone derivative, a cyano-containing compound, a compound including the element EL1 and the element EL2, or any combination thereof.

[0200] Examples of quinone derivatives may be TCNQ, F 4 -TCNQ, etc.

[0201] Examples of the cyano group-containing compound may include HAT-CN, a compound represented by Formula 221, and the like:

[0202]

[0203] Formula 221

[0204]

[0205] Among them, in formula 221,

[0206] R 221 , R 222 and R 223 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 a heterocyclic group, and

[0207] R 221 , R 222 and R 223 At least one of them may be independently C substituted with the following groups 3 -C 60 Carbocyclic or C 1 -C 60 Heterocyclic group: cyano; -F; -Cl; -Br; -I; C substituted with cyano, -F, -Cl, -Br, -I or any combination thereof 1 -C 20 or any combination thereof.

[0208] In the compound including the element EL1 and the element EL2, the element EL1 may be a metal, a metalloid, or any combination thereof, and the element EL2 may be a nonmetal, a metalloid, or any combination thereof.

[0209] Examples of metals are: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Cs), etc.); o), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); late transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); and the like.

[0210] Examples of metalloids are silicon (Si), antimony (Sb), tellurium (Te), and the like.

[0211] Examples of nonmetals are oxygen (O), halogens (eg, F, Cl, Br, I, etc.), and the like.

[0212] Examples of compounds containing element EL1 and element EL2 are metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides, metalloid iodides, etc.), metal tellurides, or any combination thereof.

[0213] Examples of metal oxides are tungsten oxide (e.g., WO, W 2 O 3 , WO 2 , WO 3 , W 2 O 5 etc.), vanadium oxide (e.g., VO, V 2 O 3 , VO 2 、V 2 O 5 etc.), molybdenum oxides (e.g., MoO, Mo 2 O 3 、MoO 2 、MoO 3 、Mo 2 O 5 etc.), rhenium oxide (e.g., ReO 3 etc.

[0214] Examples of the metal halide are alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, and the like.

[0215] Examples of alkali metal halides are LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0216] An example of an alkaline earth metal halide is BeF 2 MgF 2 , CaF 2 , SrF 2 , BaF 2 、BeCl 2 MgCl 2 , CaCl 2 、SrCl 2 、BaCl 2 ,BeBr 2 MgBr 2 , CaBr 2 , SrBr2 ,BaBr 2 ,BeI 2 MgI 2 ,CaI 2 , SrI 2 ,BaI 2 wait.

[0217] Examples of transition metal halides are titanium halides (e.g., TiF 4 、TiCl 4 、TiBr 4 、TiI 4 etc.), zirconium halides (e.g., ZrF 4 、ZrCl 4 , ZrBr 4 , ZrI 4 etc.), hafnium halides (e.g., HfF 4 , HfCl 4 , HfBr 4 , HfI 4 etc.), vanadium halides (e.g., VF 3 、VCl 3 , VBr 3 VI 3 etc.), niobium halides (e.g., NbF 3 、NbCl 3 , NbBr 3 , NbI 3 etc.), tantalum halides (e.g., TaF 3 、TaCl 3 、TaBr 3 、TaI 3 etc.), chromium halides (e.g., CrF 3 CrCl 3 CrBr 3 CrI 3 etc.), molybdenum halides (e.g., MoF 3 、MoCl 3 、MoBr 3 、MoI 3 etc.), tungsten halides (e.g., WF 3 、WCl 3 , WBr 3 , WI 3 etc.), manganese halides (e.g., MnF 2 、MnCl 2 、MnBr 2 、MnI 2 etc.), technetium halides (e.g., TcF 2 , TcCl 2 、TcBr 2 , TcI2 etc.), rhenium halides (e.g., ReF 2 、ReCl 2 、ReBr 2 、ReI 2 etc.), ferrous halides (e.g., FeF 2 、FeCl 2 , FeBr 2 ,FeI 2 etc.), ruthenium halides (e.g., RuF 2 、RuCl 2 ,RuBr 2 , RuI 2 etc.), osmium halides (e.g., OsF 2 , OsCl 2 、OsBr 2 , OsI 2 etc.), cobalt halides (e.g., CoF 2 、CoCl 2 ,CoBr 2 、CoI 2 etc.), rhodium halides (e.g., RhF 2 , RhCl 2 , RhBr 2 , RhI 2 etc.), iridium halides (e.g., IrF 2 、IrCl 2 ,IrBr 2 ,IrI 2 etc.), nickel halides (e.g., NiF 2 、NiCl 2 、NiBr 2 , NiI 2 etc.), palladium halides (e.g., PdF 2 , PdCl 2 , PdBr 2 , PdI 2 etc.), platinum halides (e.g., PtF 2 、PtCl 2 , PtBr 2 , PtI 2 etc.), cuprous halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0218] Examples of late transition metal halides are zinc halides (e.g., ZnF 2 、ZnCl 2 、ZnBr 2 、ZnI 2etc.), indium halides (e.g., InI 3 etc.), tin halides (e.g., SnI 2 etc.

[0219] Examples of lanthanide metal halides are YbF, YbF 2 , YbF 3 、SmF 3 、YbCl、YbCl 2 YbCl 3 、SmCl 3 , YbBr, YbBr 2 , YbBr 3 、SmBr 3 、YbI、YbI 2 ,YbI 3 、SmI 3 wait.

[0220] Examples of metalloid halides are antimony halides (e.g., SbCl 5 etc.

[0221] Examples of metal tellurides are alkali metal tellurides (e.g., Li 2 Te、Na 2 Te, K 2 Te、Rb 2 Te, Cs 2 Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe 2 、ZrTe 2 、HfTe 2 、V 2 Te 3 , Nb 2 Te 3 、 2 Te 3 Cr 2 Te 3 、Mo 2 Te 3 , W 2 Te 3 , MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu 2 Te, CuTe, Ag 2 Te, AgTe, Au 2Te, etc.), late transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), etc.

[0222] In an embodiment, when the hole transport layer 131 includes a layer including a p-dopant, the content of the p-dopant in the layer including the p-dopant may be in a range of about 0.1 vol % to about 10 vol % (eg, about 0.5 vol % to about 5 vol %).

[0223] The thickness of the layer containing the p-dopant can be about to about (For example, about to about ) within the range of .

[0224] [Electron transfer region]

[0225] The charge auxiliary layers disposed between the activation layer 140 and the second electrode 170 may be collectively referred to as an electron transport region.

[0226] The electron transport region may have: i) a single-layer structure consisting of a single layer consisting of a single material; ii) a single-layer structure consisting of a single layer consisting of multiple materials different from each other; or iii) a multi-layer structure including multiple layers including multiple materials different from each other.

[0227] The electron transport region may include a buffer layer 150 , a hole blocking layer (not shown), an electron transport layer 160 , an electron injection layer (not shown), or any combination thereof.

[0228] For example, the electron transport region may have an electron transport layer 160 / electron injection layer structure, a hole blocking layer / electron transport layer 160 / electron injection layer structure, a buffer layer 150 / electron transport layer 160 / electron injection layer structure, or a buffer layer 150 / electron transport layer 160 structure, wherein the constituent layers of each structure are stacked sequentially from the activation layer 140.

[0229] In an embodiment, the electron transport region (eg, the buffer layer 150, the hole blocking layer, or the electron transport layer 160 in the electron transport region) may include a nitrogen-containing C 1 -C 60 Metal-free compounds of cyclic groups.

[0230] For example, the electron transport region may include a compound represented by Formula 601:

[0231] Formula 601

[0232] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 ,

[0233] Wherein, in Formula 601,

[0234] Ar 601 and L 601 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0235] xe11 can be 1, 2 or 3,

[0236] xe1 can be 0, 1, 2, 3, 4, or 5,

[0237] R 601 may be unsubstituted or substituted with at least one R 10a C 3 -C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 )、-C(=O)(Q 601 )、-S(=O) 2 (Q 601 ) or -P(=O)(Q 601 )(Q 602 ),

[0238] Q 601 , Q 602 and Q 603 Can be compared with reference Q 1 Same as described,

[0239] xe21 can be 1, 2, 3, 4, or 5, and

[0240] Ar 601 , L 601 and R 601 At least one of them may be independently unsubstituted or substituted with at least one R 10a The π-electron-poor nitrogen-containing C 1-C 60 Ring group.

[0241] In an embodiment, when xe11 in Formula 601 is 2 or greater, Ar 601 Two or more of may be linked to each other via a single bond.

[0242] In one or more embodiments, Ar in Formula 601 601 The anthracene group may be substituted or unsubstituted.

[0243] In one or more embodiments, the electron transport region may include a compound represented by Formula 601-1:

[0244] Formula 601-1

[0245]

[0246] Among them, in formula 601-1,

[0247] X 614 Can be N or C (R 614 ), X 615 Can be N or C (R 615 ), X 616 Can be N or C (R 616 ), X 614 To X 616 At least one of may be N,

[0248] L 611 , L 612 and L 613 Can be compared with reference L 601 Same as described,

[0249] xe611, xe612 and xe613 may all be the same as described with reference to xe1,

[0250] R 611 , R 612 and R 613 Can be compared with reference R 601 Same as described, and

[0251] R 614 , R 615 and R 616 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 20 Alkyl, C 1 -C 20 Alkoxy, unsubstituted or substituted with at least one R 10a C 3 -C 60The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group.

[0252] For example, xe1 in formula 601 and xe611, xe612 and xe613 in formula 601-1 can all independently be 0, 1 or 2.

[0253] The electron transport region may include: one of compounds ET1 to ET45; 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 4,7-diphenyl-1,10-phenanthroline (Bphen); Alq 3 ; BAlq; TAZ; NTAZ; or any combination thereof:

[0254]

[0255]

[0256]

[0257] The thickness of the electron transport region can be about to about (For example, about to about ). When the electron transport region includes the buffer layer 150, the hole blocking layer, the electron transport layer 160, or any combination thereof, the thickness of the buffer layer 150 and the hole blocking layer may be independently within a range of about to about (For example, about to about ), the thickness of the electron transport layer 160 may be about to about (For example, about to about When the thickness of the buffer layer 150, the hole blocking layer and / or the electron transport layer 160 is within the above range, satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0258] In addition to the above materials, the electron transport region (eg, the electron transport layer 160 in the electron transport region) may further include a metal-containing material.

[0259] The metal-containing material can include alkali metal complex, alkaline earth metal complex or any combination thereof. The metal ion of the alkali metal complex can be Li ion, Na ion, K ion, Rb ion or Cs ion, and the metal ion of the alkaline earth metal complex can be Be ion, Mg ion, Ca ion, Sr ion or Ba ion. The ligand coordinated with the metal ion of the alkali metal complex or alkaline earth metal complex can include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene or any combination thereof.

[0260] For example, the metal-containing material may include a Li complex. The Li complex may include, for example, compound ET-D1 (Liq) or compound ET-D2:

[0261]

[0262] The electron transport region may include an electron injection layer that facilitates electron injection. The electron injection layer may be in direct contact with the second electrode 170.

[0263] The electron injection layer may have: i) a single-layer structure consisting of a single layer consisting of a single material; ii) a single-layer structure consisting of a single layer consisting of multiple materials different from each other; or iii) a multi-layer structure including multiple layers including multiple materials different from each other.

[0264] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0265] Alkali metals may include Li, Na, K, Rb, Cs, or any combination thereof. Alkaline earth metals may include Mg, Ca, Sr, Ba, or any combination thereof. Rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0266] The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may include oxides, halides (eg, fluorides, chlorides, bromides, iodides, etc.), or tellurides of alkali metals, alkaline earth metals, and rare earth metals, or any combination thereof.

[0267] The alkali metal-containing compounds may include: alkali metal oxides, such as Li 2 O、Cs 2 O.K 2O, etc.; alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, etc.; or any combination thereof. The alkaline earth metal compound-containing material may include an alkaline earth metal compound or oxide (such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1), Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1)), etc. The rare earth metal compound-containing material may include YbF 3 , ScF 3 , Sc 2 O 3 , Y 2 O 3 , Ce 2 O 3 , GdF 3 , TbF 3 , YbI 3 , ScI 3 , TbI 3 or any combination thereof. In an embodiment, the rare earth metal compound-containing material may include lanthanide metal tellurides. Examples of lanthanide metal tellurides are LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La 2 Te 3 , Ce 2 Te 3 , Pr 2 Te 3 , Nd 2 Te 3 , Pm 2 Te 3 , Sm 2 Te 3 , Eu 2 Te 3 , Gd 2 Te 3 , Tb 2 Te 3 , Dy 2 Te 3 , Ho 2 Te 3 , Er 2 Te 3 , Tm 2 Te 3 , Yb 2 Te 3 , Lu 2 Te 3 etc.

[0268] The alkali metal complexes, alkaline earth metal complexes and rare earth metal complexes may include: i) one of the ions of an alkali metal, an alkaline earth metal and a rare earth metal; and ii) a ligand that binds to the metal ion (e.g., hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene or any combination thereof).

[0269] In an embodiment, the electron injection layer may be composed of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof as described above. In one or more embodiments, the electron injection layer may also include an organic material (e.g., a compound represented by Formula 601).

[0270] In an embodiment, the electron injection layer may be composed of: i) an alkali metal compound (e.g., an alkali metal halide); ii) a) an alkali metal compound (e.g., an alkali metal halide); and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, etc.

[0271] When the electron injection layer also includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex or any combination thereof can be uniformly or non-uniformly dispersed in a matrix including the organic material.

[0272] The thickness of the electron injection layer can be about to about (For example, about to about When the thickness of the electron injection layer is within the above range, satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0273] [Second electrode 170]

[0274] The second electrode 170 is disposed on the electron transport region. The second electrode 170 may be a cathode, and as a material for forming the second electrode 170, metals, alloys, conductive compounds, or any combination thereof, each having a low work function, may be used.

[0275] The second electrode 170 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 170 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0276] The second electrode 170 may have a single-layer structure or a multi-layer structure including a plurality of layers.

[0277] [Overlay]

[0278] The first capping layer may be disposed outside the first electrode 110 , and / or the second capping layer may be disposed outside the second electrode 170 .

[0279] The first capping layer and / or the second capping layer may prevent impurities (such as water, oxygen, etc.) from entering the organic photodetector 10 , thereby increasing the reliability of the organic photodetector 10 .

[0280] Each of the first cover layer and the second cover layer may include a material having a refractive index of 1.6 or greater (at 589 nm).

[0281] The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.

[0282] At least one of the first covering layer and the second covering layer may independently include a carbocyclic compound, a heterocyclic compound, an amine-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine-containing compound may be optionally substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In an embodiment, at least one of the first covering layer and the second covering layer may independently include an amine-containing compound.

[0283] In one or more embodiments, at least one of the first cover layer and the second cover layer may each independently include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof.

[0284] In one or more embodiments, at least one of the first cover layer and the second cover layer may each independently include one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or any combination thereof:

[0285]

[0286] [Electronic equipment]

[0287] An electronic device including the organic photodetector 10 may be provided. For example, the electronic device may further include a light emitting device.

[0288] Therefore, an electronic device according to an embodiment may include: a substrate including a photodetection region and an emission region;

[0289] An organic photodetector 10 disposed on the photodetection region; and

[0290] A light emitting device is arranged on the emission area,

[0291] The organic photodetector 10 may include: a first pixel electrode; a counter electrode facing the first pixel electrode; and a hole transport region, an activation layer 140 and an electron transport region sequentially arranged between the first pixel electrode and the counter electrode.

[0292] The light emitting device may include: a second pixel electrode; a counter electrode facing the second pixel electrode; and a hole transport region, an emission layer, and an electron transport region sequentially arranged between the second pixel electrode and the counter electrode.

[0293] The first pixel electrode and the activation layer 140 may be arranged corresponding to the photodetection region.

[0294] The second pixel electrode and the emission layer may be arranged corresponding to the emission area,

[0295] The hole transport region, the electron transport region and the counter electrode may be arranged throughout the photodetection region and the emission region, and

[0296] The electron transport region of the organic photodetector 10 and the activation layer 140 may be in contact with each other, and the mean square roughness (R q ) value can be 9nm or greater.

[0297] The hole transport region and the electron transport region may both be the same as described above.

[0298] For example, the hole transport layer 131 including a layer including a p-dopant, the hole injection layer 120 , the auxiliary layer, the buffer layer 150 , the electron transport layer 160 , and the counter electrode may be arranged throughout the photodetection region and the emission region.

[0299] The electronic device can be applied to various displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notepads, electronic dictionaries, electronic game consoles, medical instruments (e.g., electronic thermometers, blood pressure meters, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasonic diagnostic devices or endoscope displays), fish finders, various measuring instruments, meters (e.g., meters for vehicles, aircraft and ships), projectors, etc.

[0300] [ Figure 3 and Figure 4 Description]

[0301] Figure 3 is a schematic cross-sectional view of an electronic device 100 according to an embodiment.

[0302] Reference Figure 3 , the electronic device 100 includes an organic photodetector 400 and a light emitting device 500 between a substrate 601 and a substrate 602 .

[0303] The substrate 601 and the substrate 602 may both be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer (not shown) and a thin film transistor (not shown) may be disposed on the substrate 601 .

[0304] The buffer layer may prevent impurities from penetrating through the substrate 601, and may provide a smooth surface on the substrate 601. A thin film transistor may be disposed on the buffer layer, and may include an active layer, a gate electrode, a source electrode, and a drain electrode.

[0305] The thin film transistor may be electrically connected to the light emitting device 500 to drive the light emitting device 500. One of the source electrode and the drain electrode may be electrically connected to the second pixel electrode 510 of the light emitting device 500.

[0306] Another thin film transistor may be electrically connected to the organic photodetector 400. One of the source electrode and the drain electrode may be electrically connected to the first pixel electrode 410 of the organic photodetector 400.

[0307] The organic photodetector 400 may include a first pixel electrode 410 , a hole injection layer 411 , a hole transport layer 420 , an optical auxiliary layer 432 , an active layer 440 , a buffer layer 450 , an electron transport layer 460 , and a counter electrode 470 .

[0308] In one or more examples, the first pixel electrode 410 may be an anode, and the counter electrode 470 may be a cathode. That is, by applying a reverse bias voltage between the first pixel electrode 410 and the counter electrode 470 to drive the organic photodetector 400, the electronic device 100 may detect light incident on the organic photodetector 400, generate charges, and extract the charges as current.

[0309] The light emitting device 500 may include a second pixel electrode 510 , a hole injection layer 411 , a hole transport layer 420 , an optical auxiliary layer 432 , an emission layer 540 , a buffer layer 450 , an electron transport layer 460 , and a counter electrode 470 .

[0310] In an embodiment, the mean square roughness (R q ) values ​​may be less than 5 nm. That is, the top and bottom surfaces of the counter electrode 470 in the light emitting device 500 are smooth. This is different from the uneven top and bottom surfaces of the counter electrode 470 in the organic photodetector 400. As used herein, the "top surface" and "bottom surface" refer to the surface of the counter electrode 470 with respect to the top surface of the light emitting device 500. Figure 3 and Figure 4 The surface of the orientation.

[0311] In an embodiment, the electron transport region and the emission layer 540 of the light emitting device 500 may contact each other, and the mean square roughness (R q ) value may be less than 5 nm. For example, the surface of the emission layer 540 of the light emitting device 500 that contacts the buffer layer 450 may have a mean square roughness (R q ) values ​​and can be characterized as smooth.

[0312] This is in contrast to the fact that in the organic photodetector 400, the interface between the electron transport region (eg, the buffer layer 450) and the active layer 440 may have a mean square roughness (R q ) value and can be characterized as an uneven surface.

[0313] In an embodiment, the electron transport region arranged in the entire photodetection region and the emission region may include an electron transport layer 460, and the mean square roughness (R q ) values ​​may be less than 5 nm, and the mean square roughness (R q ) values ​​can all be 9nm or greater.

[0314] For example, the thickness of the electron transport layer 460 of the light emitting device 500 may be about to about For example, the thickness of the electron transport layer 460 of the light emitting device 500 may be in the range of about to about within the range.

[0315] When the thickness of the electron transport layer 460 is or larger, tunneling of electrons may be difficult.

[0316] The electron transport layer 460 may be disposed throughout the photodetection region and the emission region and may have a thickness of about to about Since the electron transport layer 460 of the organic photodetector 400 is uneven, the minimum thickness of the electron transport layer 460 may be less than Therefore, tunneling of electrons may occur, and the efficiency of the organic photodetector 400 may be improved. The same may apply to all other layers included in the electron transport region of the organic photodetector 400.

[0317] In an embodiment, the second pixel electrode 510 may be an anode, and the counter electrode 470 may be a cathode. That is, in the light emitting device 500, holes injected from the second pixel electrode 510 and electrons injected from the counter electrode 470 may be recombined in the emission layer 540 to generate excitons, and the excitons may transition from an excited state to a ground state, thereby generating light.

[0318] The first pixel electrode 410 and the second pixel electrode 510 are similar to the first electrode 110 , and a redundant description will not be provided.

[0319] The pixel defining film 405 is formed at the edge of the first pixel electrode 410 and the second pixel electrode 510. The pixel defining film 405 may define a pixel region and may be electrically insulated between the first pixel electrode 410 and the second pixel electrode 510. The pixel defining film 405 may include, for example, various known organic insulating materials, inorganic insulating materials (e.g., silicon-based materials, etc.), or organic / inorganic composite insulating materials. The pixel defining film 405 may be a transmissive film that transmits visible light or a blocking film that blocks visible light.

[0320] The hole injection layer 411, the hole transport layer 420 and the optical auxiliary layer 432 as common layers are sequentially formed on the first pixel electrode 410 and the second pixel electrode 510. For the description of the hole injection layer 411, the hole transport layer 420 and the optical auxiliary layer 432, reference may be made to the related description provided herein.

[0321] The active layer 440 is formed on the optical auxiliary layer 432 to correspond to the photodetection region. Since the active layer 440 is similar to the active layer 140, a redundant description will not be provided.

[0322] The emission layer 540 is formed on the optical auxiliary layer 432 to correspond to the emission region. In an embodiment, the light emitting device 500 may further include an electron blocking layer (not shown) disposed between the second pixel electrode 510 and the emission layer 540 to correspond to the emission region.

[0323] As a common layer for the entire photodetection region and the emission region, a buffer layer 450, an electron transport layer 460, and a counter electrode 470 are sequentially formed on the activation layer 440 and the emission layer 540. For the description of the buffer layer 450, the electron transport layer 460, and the counter electrode 470, reference may be made to the description of the buffer layer 150, the electron transport layer 160, and the second electrode 170 provided herein.

[0324] Each of the hole injection layer 411 , the hole transport layer 420 , the optical auxiliary layer 432 , the buffer layer 450 , and the electron transport layer 460 may be disposed throughout the photodetection region and the emission region.

[0325] In this way, the manufacturing process of the electronic device 100 can be simplified by arranging common layers for the organic photodetector 400 and the light-emitting device 500, and the existing functional layer materials used for the light-emitting device 500 can also be used for the organic photodetector 400, so that the organic photodetector 400 can be arranged in pixels in the electronic device 100.

[0326] In an embodiment, an electron injection layer (not shown) may be further included between the electron transport layer 460 and the counter electrode 470 .

[0327] A capping layer (not shown) may be disposed on the counter electrode 470. The material for forming the capping layer may include the above-mentioned organic material and / or inorganic material. In addition to having a protective function for the organic photodetector 400 and the light emitting device 500, the capping layer may promote efficient emission of light generated from the light emitting device 500.

[0328] The encapsulation part 490 may be disposed on the cover layer. The encapsulation part 490 may be disposed on the organic photodetector 400 and the light emitting device 500 to protect the organic photodetector 400 and the light emitting device 500 from water or oxygen. The encapsulation part 490 may include: an inorganic film including silicon nitride (SiN x ), silicon oxide (SiO x ), indium tin oxide, indium zinc oxide or any combination thereof; organic films including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resins (e.g., aliphatic glycidyl ether (AGE)), etc.) or any combination thereof; or a combination of an inorganic film and an organic film.

[0329] The electronic device 100 may be, for example, a display device. Since the electronic device 100 includes both the organic photodetector 400 and the light emitting device 500, the electronic device 100 may be a display device having a light detection function.

[0330] exist Figure 3 In the embodiment, the electronic device 100 includes a light emitting device 500, but as Figure 4 As shown in FIG. 1 , the electronic device 100 a according to the embodiment may include an organic photodetector 400 , a first light emitting device 501 , a second light emitting device 502 , and a third light emitting device 503 .

[0331] Figure 4 The components and electronic device 100a are similar to Figure 3 Components and the electronic device 100, and any redundant description will be omitted.

[0332] The first light emitting device 501 may include a second pixel electrode 511 , a hole injection layer 411 , a hole transport layer 420 , an optical auxiliary layer 432 , a first emission layer 541 , a buffer layer 450 , an electron transport layer 460 , and an opposing electrode 470 .

[0333] The second light emitting device 502 may include a third pixel electrode 512 , a hole injection layer 411 , a hole transport layer 420 , an optical auxiliary layer 432 , a second emission layer 542 , a buffer layer 450 , an electron transport layer 460 , and an opposing electrode 470 .

[0334] The third light emitting device 503 may include a fourth pixel electrode 513 , a hole injection layer 411 , a hole transport layer 420 , an optical auxiliary layer 432 , a third emission layer 543 , a buffer layer 450 , an electron transport layer 460 , and an opposing electrode 470 .

[0335] The second pixel electrode 511 , the third pixel electrode 512 , and the fourth pixel electrode 513 may be arranged to correspond to the first emission region, the second emission region, and the third emission region, respectively, and may be understood by referring to the description of the first electrode 110 provided herein.

[0336] The first emission layer 541 may be arranged corresponding to the first emission region and emit first color light, the second emission layer 542 may be arranged corresponding to the second emission region and emit second color light, and the third emission layer 543 may be arranged corresponding to the third emission region and emit third color light.

[0337] The maximum emission wavelength of the first color light, the maximum emission wavelength of the second color light and the maximum emission wavelength of the third color light can be the same or different from each other. For example, the maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light can both be longer than the maximum emission wavelength of the third color light.

[0338] For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light, but the embodiment is not limited thereto. Therefore, the electronic device 100a may emit full-color light. The first color light, the second color light, and the third color light are not limited to red light, green light, and blue light, respectively, and may be any combination of different colors of light, as long as their mixed light is white light.

[0339] The organic photodetector 400 , the first light emitting device 501 , the second light emitting device 502 , and the third light emitting device 503 may each be a sub-pixel of a pixel. In an embodiment, a pixel may include at least one organic photodetector 400 .

[0340] The electronic device 100a may be a display device. Since the electronic device 100a includes all of the organic photodetector 400, the first light emitting device 501, the second light emitting device 502, and the third light emitting device 503, the electronic device 100a may be a full-color display device having a light detection function.

[0341] [ Figure 5A and Figure 5B Description]

[0342] exist Figure 5A In the electronic device 100 a shown in , the organic photodetector 400 and the first to third light emitting devices 501 , 502 , and 503 are arranged between the substrate 601 and the substrate 602 .

[0343] For example, red light, green light, and blue light may be emitted from the first light emitting device 501, the second light emitting device 502, and the third light emitting device 503, respectively.

[0344] The electronic device 100a according to the embodiment may have a function of detecting an object (eg, a fingerprint of a finger) that is in contact with or in close proximity to the electronic device 100a. Figure 5A As shown in , at least some of the light emitted from the second light emitting device 502 and reflected by the user's fingerprint may be re-incident on the organic photodetector 400, and thus the organic photodetector 400 may detect the reflected light. Since the ridges in the fingerprint pattern of the finger are in close contact with the substrate 602, the organic photodetector 400 may selectively acquire the user's fingerprint pattern, for example, image information of the ridges. Figure 5A An example is shown in which information of an object in contact with the electronic device 100a is obtained by using light emitted from the second light emitting device 502. However, information may be obtained in the same manner by using light emitted from the first light emitting device 501 and / or the third light emitting device 503.

[0345] At the same time, if Figure 5BAs shown in , the electronic device 100 a according to the embodiment can detect an object that is not in contact with the electronic device 100 a.

[0346] [Manufacturing method]

[0347] A layer constituting a hole transport region, an active layer, and a layer constituting an electron transport region may be formed in a certain region by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and laser induced thermal imaging (LITI).

[0348] When the layer constituting the hole transport region, the active layer, and the layer constituting the electron transport region are formed by vacuum deposition, the deposition temperature may be within a range of about 100° C. to about 500° C. ... -8 About 10 -3 Torr and under vacuum at about Seconds to approx. The vacuum deposition is performed at a deposition rate in the range of seconds.

[0349] Meanwhile, the deposition rate when depositing the activation layer (e.g., the layer containing the n-type semiconductor compound) of the electronic device according to the embodiment may be relatively lower than the deposition rate of other layers. For example, the deposition rate of the activation layer (e.g., the layer containing the n-type semiconductor compound) of the electronic device according to the embodiment may be about to about For example, the deposition rate of an active layer (eg, a layer including an n-type semiconductor compound) of an electronic device according to an embodiment may be within a range of about to about within the range.

[0350] When the deposition rate is within the above range, the surface of the activation layer formed of the n-type semiconductor compound represented by Formula 2 or Formula 3 may have a mean square roughness (R q )value.

[0351] When the deposition rate of the active layer (e.g., a layer comprising an n-type semiconductor compound) is relatively high (e.g., at about to about In the range of 2 or 3, the surface of the active layer formed of the n-type semiconductor compound represented by Formula 2 or 3 may have a mean square roughness (R q ) values ​​and can be smoothed.

[0352] [Definition of terms]

[0353] As used herein, the term "C3 -C 60 "Carbocyclyl" refers to a cyclic group consisting only of carbon as a ring atom and having 3 to 60 carbon atoms. 1 -C 60 The term "heterocyclic group" refers to a ring group having 1 to 60 carbon atoms and further having a hetero atom other than carbon as a ring-forming atom. 3 -C 60 Carbocyclic and C 1 -C 60 The heterocyclic group may be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are condensed with each other. 1 -C 60 The number of ring atoms in the heterocyclic group can be 3 to 61.

[0354] As used herein, a "cyclic group" may include C 3 -C 60 Carbocyclic and C 1 -C 60 Both heterocyclic groups.

[0355] As used herein, the term "π-electron-rich C 3 -C 60 "Cyclic group" refers to a cyclic group having 3 to 60 carbon atoms and not including *-N=*' as a ring-forming part, such as the term "π-electron-poor nitrogen-containing C 1 -C 60 The term "cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms and including *-N=*' as a ring-forming part.

[0356] For example,

[0357] C 3 -C 60 The carbocyclic group may be: i) a group T1; or ii) a condensed ring group in which two or more of the group T1 are condensed with each other (e.g., a cyclopentadiene group, an adamantane group, a norbornane group, a phenyl group, a pentalene group, a naphthalene group, an azulene group, an indacene group, an acenaphthene group, a phenanthrenyl group, an anthracene group, a fluoranthene group, a benzo[9,10]phenanthrene group, a pyrene group, a benzophenone group, a fluorene group, a spirobifluorene group, a benzofluorene group, an indenophenanthrene group or an indenoanthracene group),

[0358] C 1 -C 60The heterocyclic group may be: i) a group T2; ii) a condensed ring group in which two or more of the groups T2 are condensed with each other; or iii) a condensed ring group in which at least one group T2 and at least one group T1 are condensed with each other (for example, a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzisoindole group, a naphthoisoindole group, a benzothiorrole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzothiorrole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolecarbazole group, a benzofuranocarbazole group, a benzothiophenocarbazole group, a benzothiorrolecarbazole group, a benzoindolecarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthosilole group, a benzofuranodibenzofuran group, a benzofuranodibenzo a benzothiophene group, a benzothienodibenzothiophene group, a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, a benzisoxazole group, a benzothiazole group, a benzisothiazole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a quinoline group, an isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthroline group, cinnoline group, phthalazine group, naphthyridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.),

[0359] Pi-electron-rich C 3 -C 60 The cyclic group may be: i) a group T1; ii) a condensed ring group in which two or more of the groups T1 are condensed with each other; iii) a group T3; iv) a condensed ring group in which two or more of the groups T3 are condensed with each other; or v) a condensed ring group in which at least one group T3 and at least one group T1 are condensed with each other (e.g., C 3 -C 60a carbocyclic group, a 1H-pyrrole group, a thiol group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoisoindole group, a benzothiol group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzothiol group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolecarbazole group, a benzofuranocarbazole group, a benzothiophenocarbazole group, a benzothiololcarbazole group, a benzoindolecarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthothiol group, a benzofuranodibenzofurano group, a benzofuranodibenzothiophene group, a benzothiophenodibenzothiophene group, and the like),

[0360] π-electron-poor nitrogen-containing C 1 -C 60 The cyclic group may be: i) a group T4; ii) a condensed ring group in which two or more of the groups T4 are condensed with each other; iii) a condensed ring group in which at least one group T4 and at least one group T1 are condensed with each other; iv) a condensed ring group in which at least one group T4 and at least one group T3 are condensed with each other; or v) a condensed ring group in which at least one group T4, at least one group T1 and at least one group T3 are condensed with each other (for example, a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group group, benzoxazole group, benzisoxazole group, benzothiazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthroline group, cinnoline group, phthalazine group, naphthyridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.),

[0361] The group T1 can be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, a norbornane (or bicyclo[2.2.1]heptane) group, a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group or a phenyl group,

[0362] The group T2 can be a furan group, a thiophene group, a 1H-pyrrole group, a thiol group, a borocyclopentadiene group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiol group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a pyrrolidine group, an imidazolidinyl group, a dihydropyrrole group, a piperidine group, a tetrahydropyridine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydropyrazine group, a dihydropyrazine group, a tetrahydropyridazine group or a dihydropyridazine group,

[0363] The group T3 may be a furan group, a thiophene group, a 1H-pyrrole group, a thiole group or a borole group, and

[0364] The group T4 can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiazole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group or a tetrazine group.

[0365] As used herein, the term "cyclic group, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic, π-electron-rich C 3 -C 60 Cyclic groups or π-electron-poor nitrogen-containing C 1 -C 60 The term "cyclic group" refers to a group condensed to any cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.) according to the structure of the formula using the corresponding term. For example, a "phenyl group" may be a benzo group, a phenyl group, a phenylene group, etc., which can be easily understood by a person of ordinary skill in the art based on the structure of the formula including the "phenyl group".

[0366] Unit Price C 3 -C 60 Carbocyclic groups and monovalent C 1 -C 60 Examples of heterocyclic groups may include C 3 -C 10 Cycloalkyl, C 1 -C 10 Heterocycloalkyl, C 3 -C 10 Cycloalkenyl, C 1 -C 10 Heterocycloalkenyl, C6 -C 60 Aryl, C 1 -C 60 Heteroaryl, monovalent non-aromatic condensed polycyclic group and monovalent non-aromatic condensed heteropolycyclic group. 3 -C 60 Carbocyclic groups and divalent C 1 -C 60 Examples of heterocyclic groups may include C 3 -C 10 Cycloalkylene, C 1 -C 10 Heterocycloalkylene, C 3 -C 10 Cycloalkenylene, C 1 -C 10 Heterocycloalkenylene, C 6 -C 60 Arylene, C 1 -C 60 heteroarylene groups, divalent non-aromatic condensed polycyclic groups and divalent non-aromatic condensed heteropolycyclic groups.

[0367] As used herein, the term "C 1 -C 60 The term “alkyl” refers to a linear or branched aliphatic saturated hydrocarbon monovalent group having 1 to 60 carbon atoms, and examples thereof are methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, tert-decyl, and the like. As used herein, the term “C 1 -C 60 "Alkylene" refers to a group having a C 1 -C 60 Alkyl is a divalent group of the same structure.

[0368] As used herein, the term "C 2 -C 60 "Alkenyl" refers to 2 -C 60 A monovalent hydrocarbon group having at least one carbon-carbon double bond in the middle or at the terminal of the alkyl group, examples of which are ethenyl, propenyl, butenyl, etc. As used herein, the term "C 2 -C 60 "Alkenylene" refers to a 2 -C 60 Alkenyl is a divalent group of the same structure.

[0369] As used herein, the term "C 2-C 60 "Alkynyl" refers to a C 2 -C 60 The term "C" as used herein refers to a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at the terminal of the alkyl group, examples of which are ethynyl, propynyl, and the like. 2 -C 60 "Alkyne" refers to a group having a C 2 -C 60 Alkynyl is a divalent group of the same structure.

[0370] As used herein, the term "C 1 -C 60 "Alkoxy" refers to -OA 101 (Among them, A 101 It is C 1 -C 60 The monovalent group represented by an alkyl group is exemplified by a methoxy group, an ethoxy group, an isopropoxy group, and the like.

[0371] As used herein, the term "C 3 -C 10 "Cycloalkyl" refers to a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, examples of which are cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornane (bicyclo [2.2.1] heptane) group, bicyclo [1.1.1] pentyl, bicyclo [2.1.1] hexyl, bicyclo [2.2.2] octyl, and the like. As used herein, the term "Cycloalkyl" refers to a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, examples of which are cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornane (bicyclo [2.2.1] heptane) group, bicyclo [1.1.1] pentyl, bicyclo [2.1.1] hexyl, bicyclo [2. 3 -C 10 "Cycloalkylene" refers to a cycloalkylene group having a 3 -C 10 Cycloalkyl is a divalent group of the same structure.

[0372] As used herein, the term "C 1 -C 10 "Heterocycloalkyl" refers to a monovalent ring group of 1 to 10 carbon atoms which further includes at least one heteroatom other than carbon atoms as a ring-forming atom, and examples thereof are 1,2,3,4-oxatriazolidinyl, tetrahydrofuranyl, tetrahydrothienyl, and the like. As used herein, the term "C 1 -C 10 "Heterocycloalkylene" refers to a group having a C 1 -C 10 Heterocycloalkyl is a divalent group of the same structure.

[0373] As used herein, the term "C 3 -C 10 "Cycloalkenyl" refers to a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring and having no aromaticity, examples of which are cyclopentenyl, cyclohexenyl, cycloheptenyl, etc. As used herein, the term "C 3 -C10 "Cycloalkenylene" refers to a 3 -C 10 Cycloalkenyl is a divalent group of the same structure.

[0374] As used herein, the term "C 1 -C 10 The term "heterocycloalkenyl group" refers to a monovalent cyclic group of 1 to 10 carbon atoms which further includes at least one heteroatom other than carbon atoms as a ring-forming atom in its ring and has at least one double bond. 1 -C 10 Examples of heterocycloalkenyl groups are 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, 2,3-dihydrothienyl, and the like. As used herein, the term “C 1 -C 10 "Heterocycloalkenylene" refers to a 1 -C 10 Heterocycloalkenyl is a divalent group of the same structure.

[0375] As used herein, the term "C 6 -C 60 "Aryl" refers to a monovalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. 6 -C 60 "Arylene" refers to a divalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. 6 -C 60 Examples of aryl groups are phenyl, pentalenyl, naphthyl, azulenyl, indacenyl, acenaphthenyl, phenanthrenyl, anthracenyl, fluoranthenyl, benzo[9,10]phenanthrenyl, pyrenyl, phenyl, peryl, pentaphenyl, heptaphenyl, tetraphenyl, peryl, hexaphenyl, pentyl, rubidinyl, coryl, ovaphenyl, etc. 6 -C 60 Aryl and C 6 -C 60 When the arylene groups each include two or more rings, the rings may be condensed with each other.

[0376] As used herein, the term "C 1 -C 60 "Heteroaryl" refers to a monovalent group of a heterocyclic aromatic system having 1 to 60 carbon atoms, which also includes at least one heteroatom as a ring-forming atom in addition to carbon atoms. As used herein, the term "C 1 -C 60 The term "heteroarylene" refers to a divalent group of a heterocyclic aromatic system having 1 to 60 carbon atoms, the heterocyclic aromatic system further comprising at least one heteroatom as a ring-forming atom in addition to carbon atoms. 1 -C60 Examples of heteroaryl groups are pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, benzoquinolyl, isoquinolyl, benzoisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinnolinyl, phenanthrolinyl, phthalazinyl, naphthyridinyl, and the like. 1 -C 60 Heteroaryl and C 1 -C 60 When the heteroarylene group includes two or more rings, the rings may be condensed with each other.

[0377] As used herein, the term "monovalent non-aromatic condensed polycyclic radical" refers to a monovalent group having two or more rings condensed to each other, only carbon atoms (e.g., having 8 to 60 carbon atoms) as ring atoms and no aromaticity in its entire molecular structure. Examples of monovalent non-aromatic condensed polycyclic radicals are indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenophenanthryl, indenoanthryl, etc. As used herein, the term "divalent non-aromatic condensed polycyclic radical" refers to a divalent group having the same structure as a monovalent non-aromatic condensed polycyclic radical.

[0378] The term "monovalent non-aromatic condensed heteropolycyclic group" as used herein refers to a monovalent group having two or more rings condensed with each other, at least one heteroatom as a ring-forming atom other than carbon atoms (e.g., having 1 to 60 carbon atoms), and having no aromaticity in its entire molecular structure. Examples of monovalent non-aromatic condensed heteropolycyclic groups are 9,9-dihydroacridinyl, 9H-xanthenyl, etc. The term "divalent non-aromatic condensed heteropolycyclic group" as used herein refers to a divalent group having the same structure as the monovalent non-aromatic condensed heteropolycyclic group.

[0379] As used herein, the term "C 6 -C 60 "Aryloxy" refers to -OA 102 (Among them, A 102 It is C 6 -C 60 Aryl), as used herein, 6 -C 60 "Arylthio" refers to -SA 103 (Among them, A 103 It is C 6 -C 60 aryl).

[0380] As used herein, the term "C 7 -C 60 "Arylalkyl" refers to -A 104 A 105 (Among them, A 104 It is C 1 -C 54 Alkylene, A105 It is C 6 -C 59 Aryl), as used herein, 2 -C 60 "Heteroarylalkyl" refers to -A 106 A 107 (Among them, A 106 It is C 1 -C 59 Alkylene, A 107 It is C 1 -C 59 heteroaryl).

[0381] As used herein, the term " 10a " can be:

[0382] deuterium, -F, -Cl, -Br, -I, hydroxy, cyano or nitro;

[0383] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl, C 2 -C 60 Heteroarylalkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O) 2 (Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl or C 1 -C 60 Alkoxy;

[0384] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl, C 1 -C 60 Alkoxy, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl, C 2 -C 60 Heteroarylalkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O) 2 (Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl or C 2 -C 60 heteroarylalkyl; or

[0385] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O) 2 (Q 31) or -P(=O)(Q 31 )(Q 32 ).

[0386] The Q used here 1 , Q 2 and Q 3 , Q 11 , Q 12 and Q 13 , Q 21 , Q 22 and Q 23 and Q 31 , Q 32 and Q 33 can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C 1 -C 60 Alkyl; C 2 -C 60 Alkenyl; C 2 -C 60 Alkynyl; C 1 -C 60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C 1 -C 60 Alkyl, C 1 -C 60 C alkoxy, phenyl, biphenyl or any combination thereof 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 7 -C 60 Arylalkyl or C 2 -C 60 Heteroarylalkyl.

[0387] As used herein, the term "heteroatom" refers to any atom other than a carbon atom. Examples of heteroatoms are O, S, N, P, Si, B, Ge, Se, and any combination thereof.

[0388] The term "third row transition metal" as used herein includes Hf, Ta, W, Re, Os, Ir, Pt, Au, and the like.

[0389] The term "Ph" as used herein refers to phenyl, the term "Me" as used herein refers to methyl, the term "Et" as used herein refers to ethyl, the term "tert-Bu" or "Bu" as used herein refers to ethyl. t ” refers to tert-butyl, and the term “OMe” as used herein refers to methoxy.

[0390] As used herein, the term "biphenyl" refers to a "phenyl group substituted with a phenyl group". In other words, a "biphenyl group" may be a group having C 6 -C 60 A phenyl group substituted with an aryl group as a substituent.

[0391] As used herein, the term "terphenyl" refers to a "phenyl group substituted with a biphenyl group". In other words, a "terphenyl group" may be a group having a C 6 -C 60 Aryl C 6 -C 60 A phenyl group substituted with an aryl group as a substituent.

[0392] [Example]

[0393] Comparative Example 1

[0394] like Figure 3 As shown in FIG. 6 , a first pixel electrode 410 and a second pixel electrode 510 are formed on a substrate 601 , and a pixel defining film 405 is defined at edges of the pixel electrodes.

[0395] On the first pixel electrode 410 and the second pixel electrode 510, a A p-doped hole transport layer (HT3 doped with HAT-CN (1 vol%)) with a thickness of 1000 nm was used as a common layer, and then, a layer having a thickness of 1000 nm and a thickness of 1000 nm was formed by using HT3. The hole transport layer has a thickness of .

[0396] Subsequently, as a common layer, a An optical auxiliary layer of thickness.

[0397] On the optical auxiliary layer in the photodetection region, D-14 as a p-type semiconductor compound is deposited at a rate of The thickness of the layer is then A-1 as an n-type semiconductor compound is deposited at a rate of A layer of thickness is formed to form an activation layer.

[0398] At the same time, 9,10-dinaphth-2-yl-anthracene (hereinafter, referred to as ADN) as a blue fluorescent host and N,N,N',N'-tetraphenyl-pyrene-1,6-diamine (TPD) as a blue fluorescent dopant compound were co-deposited in a weight ratio of 98:2 on the optical auxiliary layer in the emission region to form a blue fluorescent dopant having The thickness of the emission layer.

[0399] Subsequently, BAlq was vacuum deposited to form a A buffer layer with a thickness of 1000 mm / s is used as a common layer, and ET1 is vacuum deposited on the buffer layer to form a An electron transport layer with a thickness of 500 Å serves as a common layer.

[0400] MgAg (Mg doping ratio: 5 wt%) was deposited on the electron transport layer to form a A cathode with a thickness of 1000 Å is formed as a common layer, thereby completing the manufacture of an in-cell type electronic device including an organic photodetector and a light-emitting device.

[0401] Comparative Examples 2 to 8

[0402] An electronic device was manufactured in the same manner as in Comparative Example 1, except that the corresponding p-type semiconductor compound and n-type semiconductor compound shown in Table 1 were used to form the active layer.

[0403] Examples 1 to 8

[0404] An electronic device was manufactured in the same manner as in Comparative Example 1, except that the corresponding p-type semiconductor compound (donor) and n-type semiconductor compound (acceptor) shown in Table 1 were used to form the active layer, wherein when the p-type semiconductor compound (donor) was used, The deposition rate is 2000 Å, and when using n-type semiconductor compounds (acceptors), the deposition rate is 2000 Å. Deposition is performed at a rate to form each layer.

[0405] External quantum efficiency (EQE) with respect to a wavelength of 530 nm, which is a peak wavelength of the organic photodetectors of the electronic devices manufactured in Comparative Examples 1 to 8 and Examples 1 to 8, was measured.

[0406] In addition, the LUMO energy value of the n-type semiconductor compound (acceptor), the LUMO energy value difference between the layer composed of the n-type semiconductor compound and the buffer layer, and the R of the surface in contact with the layer composed of the n-type semiconductor compound (acceptor) and the buffer layer were measured. q The results are shown in Table 1.

[0407] The LUMO energy values ​​were calculated by using density functional theory (DFT) and the R q value, and the EQE was measured by applying a reverse voltage of 3 V with a quantum efficiency meter using a Xe lamp and a source meter.

[0408] Table 1

[0409]

[0410]

[0411]

[0412] Referring to Table 1, in the same device structure, the examples show higher EQE than the comparative examples. For example, Example 1 shows better results (ie, higher EQE) than Comparative Example 1, Example 5 shows better results than Comparative Example 5, and Example 8 shows better results than Comparative Example 8.

[0413] At the same time, it was confirmed that the R q The values ​​are all greater than 9 nm, and the R q The value is also greater than 9nm.

[0414] It was confirmed that the R of the interface between the layer containing the p-type semiconductor compound and the layer containing the n-type semiconductor compound in the active layer of the exemplary organic photodetector was q The value is less than 5 nm. In addition, it is confirmed that the R q The value is less than 5nm.

[0415] Meanwhile, referring to Table 1, even when the same n-type semiconductor compound (acceptor) is used, the measured R q The values ​​are also slightly different from each other (for example, Comparative Example 1 and Comparative Example 5 and Example 1 and Example 5). This is because different p-type semiconductor compounds (donors) are used.

[0416] In the above examples and comparative examples, the layers for which no specific deposition rate is described are formed at a general deposition rate used in the art.

[0417] According to one or more embodiments, the organic photodetector may have excellent efficiency.

[0418] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for the purpose of limitation. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope as defined by the claims.

Claims

1. An electronic device, comprising: a substrate including a photodetection region and an emission region; an organic photodetector, arranged on the photodetection region; as well as a light emitting device arranged on the emission area, The organic photodetector comprises: a first pixel electrode; a counter electrode facing the first pixel electrode; and a hole transport region, an activation layer and an electron transport region sequentially arranged between the first pixel electrode and the counter electrode. The light emitting device includes: a second pixel electrode; the counter electrode facing the second pixel electrode; and the hole transport region, the emission layer and the electron transport region sequentially arranged between the second pixel electrode and the counter electrode, The first pixel electrode and the activation layer are arranged in the photodetection region, The second pixel electrode and the emission layer are arranged in the emission region, The hole transport region, the electron transport region and the counter electrode are arranged in the photodetection region and the emission region, and The electron transport region and the active layer of the organic photodetector are in contact with each other, and a mean square roughness value of a surface of the active layer closest to the electron transport region is 9 nm or more.

2. The electronic device according to claim 1, wherein: The hole transport region includes a hole injection layer, a hole transport layer, an electron blocking layer, an auxiliary layer or any combination thereof.

3. The electronic device according to claim 1, wherein: The electron transport region includes a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

4. The electronic device according to claim 1, wherein: The active layer is a mixed layer including a p-type semiconductor compound and an n-type semiconductor compound; or The activation layer includes: a layer containing a p-type semiconductor compound; and a layer including an n-type semiconductor compound, and the layer including the n-type semiconductor compound is in contact with the electron transport region.

5. The electronic device according to claim 1, wherein: The electron transport region of the organic photodetector comprises a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer or any combination thereof, and A layer of the electron transport region is in contact with the active layer.

6. The electronic device according to claim 1, wherein: The electron transport region of the organic photodetector comprises a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer or any combination thereof, and The mean square roughness value of the surface of each layer of the electron transport region is 9 nm or more.

7. The electronic device according to claim 1, wherein: The mean square roughness values ​​of the top surface and the bottom surface of the counter electrode above the first pixel electrode are both 9 nm or greater.

8. The electronic device according to claim 1, wherein: The mean square roughness values ​​of the top surface and the bottom surface of the counter electrode above the second pixel electrode are both less than 5 nm.

9. The electronic device according to claim 1, wherein: The activation layer includes: a layer containing a p-type semiconductor compound; and a layer containing an n-type semiconductor compound, The layer containing the p-type semiconductor compound and the layer containing the n-type semiconductor compound are in direct contact with each other, and A surface of the layer comprising the p-type semiconductor compound in contact with the layer comprising the n-type semiconductor compound has a mean square roughness value of less than 5 nm.

10. The electronic device according to claim 1, wherein: The electron transport region and the emission layer of the light emitting device are in contact with each other, and a mean square roughness value of a surface of the emission layer closest to the electron transport region is less than 5 nm.

11. The electronic device according to claim 1, wherein: The activation layer includes a layer containing an n-type semiconductor compound, and The lowest unoccupied molecular orbital energy value of the layer including the n-type semiconductor compound is greater than -4.50 eV and less than -3.20 eV.

12. The electronic device according to claim 1, wherein: The activation layer includes: a layer containing a p-type semiconductor compound; and a layer containing an n-type semiconductor compound, The layer containing the n-type semiconductor compound is in contact with the electron transport region arranged between the first pixel electrode and the counter electrode, and A difference between a lowest unoccupied molecular orbital energy value of a layer in contact with the layer including the n-type semiconductor compound in the electron transport region and a lowest unoccupied molecular orbital energy value of the layer including the n-type semiconductor compound is 0.3 eV or more.

13. The electronic device according to claim 12, wherein: The lowest unoccupied molecular orbital energy value of the layer in the electron transport region that is in contact with the layer including the n-type semiconductor compound is greater than the lowest unoccupied molecular orbital energy value of the layer including the n-type semiconductor compound.

14. The electronic device according to claim 12, wherein: The layer in the electron transport region that is in contact with the layer including the n-type semiconductor compound is a buffer layer or an electron transport layer.

15. The electronic device according to claim 1, wherein: The electron transport region arranged throughout the photodetection region and the emission region includes an electron transport layer, The mean square roughness values ​​of the top surface and the bottom surface of the electron transport layer of the light-emitting device are both less than 5 nm, and The mean square roughness values ​​of the top and bottom surfaces of the electron transport layer of the organic photodetector are both 9 nm or greater.

16. The electronic device according to claim 15, wherein: The thickness of the electron transport layer of the light emitting device is to within the range.

17. The electronic device according to claim 1, wherein: The active layer includes a p-type semiconductor compound, and The p-type semiconductor compound includes a compound represented by Formula 1: Formula 1 Among them, in formula 1, X1 is O, S, Se, Te, SO, SO2, CR 11 R 12 or SiR 13 R 14 , A is unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic group, R1, R2 and R3, R 11 , R 12 , R 13 and R 14 and Ar1 and Ar2 are independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R 10a C1-C 20 Alkyl, unsubstituted or substituted with at least one R 10a C1-C 20 Alkoxy, unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 heterocyclic group, -Si(Q1)(Q2)(Q3), -N(Q1)(Q2), -B(Q1)(Q2), -C(=O)(Q1), -S(=O)2(Q1) or -P(=O)(Q1)(Q2), R 10a yes: deuterium, -F, -Cl, -Br, -I, hydroxy, cyano or nitro; Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Arylalkyl, C2-C 60 Heteroarylalkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O)2(Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl or C1-C 60 Alkoxy; Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Arylalkyl, C2-C 60 Heteroarylalkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O)2(Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Arylalkyl or C2-C 60 heteroarylalkyl; or -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O)2(Q 31 ) or -P(=O)(Q 31 )(Q 32 ), Q1, Q2 and Q3, Q 11 , Q 12 and Q 13 , Q 21 , Q 22 and Q 23 and Q 31 To Q 33 are independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkynyl; C1-C 60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 C3-C4 alkyl, phenyl, biphenyl or any combination thereof 60 Carbocyclic group, C1-C 60 Heterocyclic group, C7-C 60 Arylalkyl or C2-C 60 heteroarylalkyl, and R1, R2, R3, R 11 , R 12 , R 13 , R 14 Adjacent substituents among Ar1, Ar2 and Ar3 may optionally be combined with each other to form a ring.

18. The electronic device according to claim 17, wherein: The p-type semiconductor compound includes one of the following compounds:

19. The electronic device according to claim 1, wherein: The activation layer includes an n-type semiconductor compound, and The n-type semiconductor compound includes a compound represented by Formula 2 or Formula 3: Formula 2 Formula 3 Among them, in formula 2, X 111 and X 112 are independently O or NR 119 ,and R 111 , R 112 , R 113 , R 114 , R 115 , R 116 , R 117 , R 118 and R 119 are independently hydrogen, deuterium, halogen, cyano, nitro, hydroxyl, unsubstituted or substituted with at least one R 10a C1-C 30 Alkyl, unsubstituted or substituted with at least one R 10a C6-C 30 Aryl, unsubstituted or substituted with at least one R 10a C3-C 30 heteroaryl or any combination thereof, Among them, in formula 3, X 121 and X 122 are independently O or NR 125 ,and R 121 , R 122 , R 123 , R 124 and R 125 are independently hydrogen, deuterium, halogen, cyano, nitro, hydroxyl, unsubstituted or substituted with at least one R 10a C1-C 30 Alkyl, unsubstituted or substituted with at least one R 10a C6-C 30 Aryl, unsubstituted or substituted with at least one R 10a C3-C 30 heteroaryl or any combination thereof, Among them, in formula 2 and formula 3, R 10a yes: deuterium, -F, -Cl, -Br, -I, hydroxy, cyano or nitro; Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C1-C 60 Heteroaryloxy, C1-C 60 Heteroarylthio, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O)2(Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl or C1-C 60 Alkoxy; Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C1-C 60 Heteroaryloxy, C1-C 60 Heteroarylthio, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O)2(Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C1-C 60 Heteroaryloxy or C1-C 60 heteroarylthio; or -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O)2(Q 31 ) or -P(=O)(Q 31 )(Q 32 ), and Q 11 , Q 12 and Q 13 , Q 21 , Q 22 and Q 23 and Q 31 To Q 33 are independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkynyl; C1-C 60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 C3-C4 alkyl, phenyl, biphenyl or any combination thereof 60 Carbocyclic group, C1-C 60 Heterocyclic group, C7-C 60 Arylalkyl or C2-C 60 Heteroarylalkyl.

20. The electronic device according to claim 19, wherein: The n-type semiconductor compound includes one of the following compounds:

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