Vapor deposition machine and control method thereof

Abstract

The embodiment of the invention discloses a vapor deposition machine table and a control method thereof, and the vapor deposition machine table comprises a wafer bearing disc which is located in a process cavity; the wafer bearing disc is configured to bear a first surface of a wafer; the photoelectric detection device is positioned outside the process cavity; the light emitting assembly comprises a plurality of light emitting heads which are arranged at intervals; the light emitting head is configured to emit a light signal to a first surface of the wafer when the wafer moves along a first direction on one side of the light emitting head, where the light signal is emitted; the light receiving assembly comprises a light receiving head corresponding to the light emitting head; the light receiving assembly is configured to receive a light reflection signal of the first surface of the wafer and generate a plurality of photoelectric parameters according to the light reflection signal; the processing part is configured to obtain a plurality of displacement parameters of the wafer in the process that the first surface of the wafer is scanned by the optical signal; and generating an offset parameter of the wafer relative to the wafer bearing disc according to the plurality of displacement parameters and the plurality of photoelectric parameters.

Description

Technical Field

[0001] The disclosed embodiments relate to the field of semiconductor technology, and more particularly to a vapor deposition machine and a control method thereof. Background Art

[0002] In some vapor deposition processes, including but not limited to chemical vapor deposition, physical vapor deposition, and plasma-enhanced vapor deposition, the wafer is transferred into the process chamber and adsorbed on the wafer carrier to be fixed; process gas is introduced into the deposition chamber to form a film layer on the surface of the wafer. During the operation of some vapor deposition machines, the wafer is transferred into the process chamber by a conveying device such as a robotic arm and placed on the wafer carrier. The wafer will shift, which will cause uneven deposition of the film layer on the surface of the wafer, and cause excessively thick film to be deposited in some areas on the back of the wafer, resulting in static electricity accumulation and tip discharge, reducing the operating efficiency of the deposition machine and the yield of thin film deposition. In view of this, there is still a lot of room for improvement in vapor deposition machines. Summary of the invention

[0003] According to some aspects of the embodiments of the present disclosure, there is provided a vapor deposition machine, comprising:

[0004] A process chamber is configured to accommodate a wafer and deposit a film layer on the surface of the wafer; a wafer carrier is located in the process chamber; the wafer carrier is configured to carry the first surface of the wafer; a photoelectric detection device is located outside the process chamber; the photoelectric detection device includes a light emitting component, a light receiving component, and a processing unit connected to the light receiving component; the light emitting component includes a plurality of light emitting heads arranged at intervals; the light emitting head is configured to: when the wafer moves along a first direction on a side where the light emitting head emits a light signal, emit a light signal to the first surface of the wafer; the first direction is perpendicular to the emission of the light signal The light receiving component comprises a light receiving head corresponding to the light transmitting head; the light receiving component is configured to receive a light reflection signal from the first surface of the wafer, and generate a plurality of photoelectric parameters according to the light reflection signal; the processing unit is configured to: obtain a plurality of displacement parameters of the wafer during the process of scanning the first surface of the wafer by the light signal; and generate an offset parameter of the wafer relative to the wafer carrier according to the plurality of displacement parameters and the plurality of photoelectric parameters.

[0005] According to some aspects of the embodiments of the present disclosure, a method for controlling a vapor deposition machine is provided, comprising:

[0006] Control the conveying device to pick up the wafer from the wafer carrier plate and transfer it out of the process chamber, so that the wafer moves along the first direction on the side where the multiple light emitting heads emit light signals, so that the first surface of the wafer in contact with the wafer carrier plate is scanned by the light signal; the first direction is perpendicular to the emission direction of the light signal; the reflectivity of the edge and the middle area of ​​the first surface of the wafer is different, and the outer contour of the middle area of ​​the first surface includes an arc; in the process of the first surface of the wafer being scanned by the light signal, control the light receiving component to receive the light reflection signal of the first surface of the wafer, and generate a plurality of photoelectric parameters according to the light reflection signal; obtain a plurality of displacement parameters of the wafer in the process of being scanned by the light signal, and generate the offset parameters of the wafer relative to the wafer carrier plate according to the plurality of displacement parameters and the plurality of photoelectric parameters.

[0007] The embodiment of the present disclosure provides a vapor deposition machine, including a process chamber and a wafer carrier plate located in the process chamber, the wafer carrier plate is used to support the first surface of the wafer; a light detection device is arranged outside the process chamber, the light detection device includes a light emitting component, a light receiving component and a processing unit connected to the light receiving component; when the first surface of the wafer is scanned along a first direction by a plurality of light signals emitted by a light emitting head of the light emitting component, the light receiving head of the light emitting component receives a reflection signal of the wafer, and the light receiving component generates a photoelectric parameter in the form of an electrical signal after receiving the light signal; the processing unit obtains a plurality of displacement parameters of the wafer during the process of the wafer being scanned by the light signal, and generates an offset parameter of the wafer relative to the wafer carrier plate according to the plurality of displacement parameters and the plurality of photoelectric parameters, so as to reduce the yield reduction caused by the excessive offset between the wafer and the wafer carrier plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a schematic diagram of an exemplary vapor deposition machine according to an embodiment of the present disclosure;

[0009] Figure 2 and Figure 3 is a schematic diagram showing the offset of a wafer relative to a wafer carrier according to an embodiment of the present disclosure;

[0010] Figure 4 is a schematic diagram of wafer movement according to an embodiment of the present disclosure;

[0011] Figure 5 is a schematic diagram of a light receiving head according to an embodiment of the present disclosure;

[0012] Figure 6 is an example of a mapping relationship between a photoelectric parameter and a displacement parameter according to an embodiment of the present disclosure;

[0013] Figures 7 to 17 is a schematic diagram of wafer scanning according to an embodiment of the present disclosure;

[0014] Fig.18 It is a schematic diagram of a control method of an exemplary vapor deposition machine according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0015] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0016] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0017] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers.

[0018] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0019] It should be understood that the "some embodiments" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiments are included in at least one embodiment of the present disclosure. Therefore, "in some embodiments" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the sequence number of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure.

[0020] For some vapor deposition machines, including but not limited to chemical vapor deposition, atomic deposition, physical deposition, plasma enhanced vapor deposition, plasma enhanced atomic deposition, and plasma enhanced physical deposition, etc.; Figure 1 In the illustrated vapor deposition machine 10, the wafer 100 is carried on a wafer carrier 202 in a process chamber 201. The wafer carrier 202 can be an electrostatic adsorption chuck, a vacuum adsorption chuck, or a mechanical chuck. A deposition ring 203 can be mounted on the side wall of the wafer carrier 202. The deposition ring 203 can be made of a ceramic or metal material such as quartz, alumina, stainless steel, titanium or other suitable materials. The deposition ring 203 is close to the upper surface of the wafer carrier 202 and can be in contact with or not in contact with the wafer 100. The deposition ring 203 does not protrude above the upper surface of the wafer carrier 202. The deposition ring 203 can be used to protect the side wall of the wafer carrier 202, or can be used to fix or position the wafer carrier 202, or can be used to define a target area for carrying the wafer 100, or can be used to define a target area for performing thin film deposition. In some embodiments, in order to reduce the damage to the wafer carrier 202 caused by gas deposition on the surface of the wafer carrier 202 or plasma bombardment, the diameter of the wafer carrier 202 can be smaller than the diameter of the wafer 100. When the wafer 100 is placed on the wafer carrier 202, it will protrude radially from the wafer carrier 202 to protect the wafer carrier 202. In order to reduce the eccentricity of the thin film deposited on the wafer 100 and the uneven distribution of the film thickness, the center of the wafer 100 and the center of the wafer carrier 202 are as close as possible to each other or there is a certain offset within a certain error range to improve the film deposition yield. Figure 1 As shown, the diameter of the wafer 100 may be 300 mm, the diameter of the wafer carrier 202 may be 294 mm, the deposition ring 203 may have a chamfer around one end of the wafer carrier 202, and the width D1 of the edge portion of the chamfered wafer carrier 202 in the radial direction (x direction) may be 1 mm.

[0021] In some embodiments, for some plasma enhanced chemical deposition or plasma sputtering deposition processes, due to the addition of plasma, the plasma will bombard the side wall of the process chamber 201, or bombard the partial area of ​​the deposition ring 203 at the bottom of the wafer 100, causing the sputtering of plasma. The edge area on the back of the wafer 100 protrudes radially from the wafer carrier 202 and is exposed, and a part of the plasma sputters to the bottom surface of the wafer 100 to form a thin film, specifically, a thin film is deposited on the part of the back of the wafer 100 protruding radially from the wafer carrier 100. When the film is deposited thickly, it will contact the film on the deposition ring 203, causing tip discharge and causing defects; when performing a conductive film deposition process such as a metal film, the tip discharge will be further aggravated. For example, when performing a plasma sputtering deposition process, the target material 204 is bombarded with plasma, so that the atoms / molecules of the target material 204 are bombarded and deposited on the surface of the wafer 100, and the plasma sputters on the back of the wafer 100 to form a film layer, which is a ring-shaped or arc-shaped pattern. When the center of the wafer 100 is greatly offset from the center of the wafer carrier 100, one side of the wafer 100 does not adequately shield the wafer carrier 202 and the deposition ring 203, resulting in the formation of a thicker film layer on the edge of the wafer carrier 202 and the deposition ring 203. The contact between the film layer and the wafer 100 causes tip discharge.

[0022] In some embodiments, Figure 2 A schematic diagram showing that there is an offset between the center O1 of the wafer 100 and the center O2 of the wafer carrier 202 is shown. The projection direction of the schematic diagram can be projected upward from the bottom of the wafer carrier 202. The relative displacement between the center O1 and the center O2 can be determined to determine the offset of the wafer 100 relative to the wafer carrier 100. For the position of the center O1 of the wafer 100, a plane rectangular coordinate system or reference system can be established with a certain reference point O, and the coordinates of three points l, m and n on the edge of any wafer 100 can be determined. The center of the circumscribed circle of the three points is the position of O1. The position of O1 can be calculated by the calculation formula or algorithm of the center coordinates of the circumscribed circle of the triangle. The position of O2 can be determined by the coordinates of any three points i, j and k. After the coordinates of O2 and O1 are determined, the offset can be calculated. According to the size of the offset, the machine can be adjusted or paused before the next wafer is fed, and the conveyor 205 can be tested or reset. The offset direction can be determined in combination with the notch 103 of the wafer 100. For example, the notch 103 can be oriented in the same direction when the wafer 100 is entering or exiting the process chamber 201, such as always facing the chamber door 206 of the process chamber 201, so that the offset direction of the wafer 100 will not deviate too much. Or, Figure 2The coordinates of the centers O2 and O1 in the reference system xoy have been confirmed, and the offset distance and offset angle of the center O1 relative to O2 can be determined. According to the offset distance and offset angle, the conveyor 205 is reversely adjusted or compensated so that the center O1 of the wafer 100 coincides with the center O2 of the wafer carrier 202 or is offset within a certain error range. The movement, adjustment, and displacement of the conveyor 205 can be controlled by the control unit of the machine.

[0023] In some embodiments, a film layer is formed on the back side of the wafer 100 due to plasma sputtering, such as Figure 3 The first film layer 102 is shown in FIG. 1 . The first film layer 102 is formed at a position Figure 2 The position not covered by the wafer carrier 202 is the middle area 101 of the original wafer 100 and is not covered by the film layer. The outer contour of the first film layer 102 includes two set circular edges, such as a first circular edge of the outer circle and a second circular edge of the inner circle. The first circular edge is the outer contour of the original wafer 100, and the second circular edge is the boundary edge between the first film layer 102 and the middle area 101; the centers of the inner circle and the outer circle can coincide or offset, the diameter of the outer circle is the diameter of the wafer 100, the diameter of the inner circle is the diameter of the wafer carrier 202 or is close to the diameter of the wafer carrier 202, the center O1 of the outer circle is the center of the wafer 100, and the center O2 of the inner circle is the position of the center of the wafer carrier 202 on the back of the wafer. A reference system oxy is established, the coordinates of any three points l, m and n of the outer circle are determined to determine the center O1, and the coordinates of any three points i, j and k of the inner circle are determined to determine the center O2. The offset distance and offset direction of the center O1 of the wafer 100 relative to the center O2 of the wafer carrier 202 are determined according to the coordinates of the center O1 and the center O2. In view of this, the embodiment of the present disclosure provides a vapor deposition machine 10, which uses a photoelectric detection device 210 to emit a light signal and receive a reflection signal, calculates the coordinates of the feature point according to the reflection signal of the feature point, and calculates the offset of the wafer 100 relative to the wafer carrier 100. The offset can be a vector, including an offset distance and an offset direction; or the offset can be a constant, including a relative offset distance.

[0024] According to some aspects of the embodiments of the present disclosure, Figure 1 and Figure 4A vapor deposition machine 10 is provided, comprising: a process chamber 201, configured to accommodate a wafer 100 and deposit a film layer on the surface of the wafer 100; a wafer carrier plate 202, located in the process chamber 201; the wafer carrier plate 202 is configured to carry a first surface of the wafer 100; the first surface may be the back side of the wafer 100, and the surface of the wafer 100 opposite to the first surface in the z direction is the front side, and the front side is used for deposition to form a target film; a photoelectric detection device 210, located outside the process chamber 201; the photoelectric detection device 210 comprises a light emitting component 230, a light receiving component 240, and a processing unit 220 connected to the light receiving component 240; the light emitting component 230 comprises a plurality of light emitting heads 231 arranged at intervals; the light emitting heads 231 are configured as follows:

[0025] When the wafer 100 moves along the first direction (x direction) on the side where the optical transmitter head 231 transmits the optical signal, the optical signal is transmitted to the first surface of the wafer 100; the first direction is perpendicular to the transmission direction of the optical signal, and the transmission direction of the optical signal can be the z direction, which is the thickness direction and vertical direction of the wafer 100; the reflectivity of the edge of the first surface of the wafer 100 is different from that of the middle area 101, and the outer contour of the middle area 101 of the first surface includes an arc;

[0026] The light receiving component 240 includes a light receiving head 241 corresponding to the light transmitting head 231; the light receiving component 240 is configured to receive a light reflection signal from the first surface of the wafer 100, and generate a plurality of photoelectric parameters according to the light reflection signal; the photoelectric parameters are related to the light intensity of the light reflection signal received by the light receiving component 240; the photoelectric parameters may be electrical signals such as current or voltage, such as current value;

[0027] The processing unit 220 is configured to: obtain multiple displacement parameters of the wafer 100 during the process of the first surface of the wafer 100 being scanned by the optical signal; and generate offset parameters of the wafer 100 relative to the wafer carrier 202 according to the multiple displacement parameters and the multiple photoelectric parameters. The displacement parameters are displacement parameters collected during the process from when the edge of the wafer 100 begins to contact the optical signal until the edge of the wafer 100 leaves the optical signal. When the wafer 100 moves to different positions, the optical signal covers film layers of materials with different reflectivity, and the optical receiving head 241 receives optical reflection signals of different light intensities, which may have photoelectric parameters of different sizes.

[0028] Reference Figure 1 As shown, the vapor deposition machine 10 is a plasma sputtering deposition device, and the vapor deposition machine 10 also includes a plasma generating device, which at least includes an electrode or a coil located above the target material 204 to generate plasma; it also includes a plasma biasing device to accelerate the plasma to bombard the target material 204 along the z direction, so that the bombarded particles move toward the surface of the wafer 100 along the direction of the dotted arrow in the figure and deposit to form a target film layer.

[0029] Reference Figure 1 and Figure 4 As shown, the vapor deposition machine 10 includes a chamber door 206, which can be opened and closed to transmit and pass the wafer 100. A plurality of light emitting heads 231 and a light receiving head 241 corresponding to the light emitting head 231 are arranged at the position of the chamber door 206 or adjacent to the position of the chamber door 206. The light emitting head 231 and the light receiving head 241 are arranged closely adjacent to each other to reduce the error of emission and reception. The plurality of light emitting heads 231 can be arranged in parallel in a horizontal direction such as in the y direction. For example, at least two light emitting heads 231 are arranged at intervals in the y direction. The interval distance can be less than the diameter of the wafer carrier 202, or can be less than or equal to the radius of the wafer carrier 202.

[0030] Reference Figure 1 As shown, the optical transmitting assembly 230 may include a plurality of optical transmitting heads 231, and the optical transmitting heads 231 are coupled to the optical transmitting assembly 230 through an optical path, and the optical path may include an optical fiber or an optical waveguide; the optical transmitting assembly 230 may include a splitter module, and the splitter module splits the light input from the light source into a plurality of optical signals and outputs them to the plurality of optical transmitting heads 231 respectively, and the wavelength bands of the optical signals emitted by each optical transmitting head 231 may be the same or different. For example, each optical transmitting head 231 may receive and emit optical signals of different wavelength bands, that is, the wavelength distribution intervals of each optical signal are different, and the optical receiving head 241 may be set according to the different wavelength bands of the received light reflection signal to reduce the interference of the light reflection signal on other optical receiving heads 241. For example, the light reflection signal of the first wavelength band is received by the optical receiving head 241a, and the light reflection signal of the first wavelength band is not received by the optical receiving head 241b, or the optical receiving head 241b is not sensitive to the light reflection signal of the first wavelength band. The light receiving head 241 is connected to the main body of the light receiving module 240 by a signal line, and the light receiving head 241 converts the incident light reflection signal into an electrical signal (photoelectric parameter) and outputs it to the processing unit 220 .

[0031] Reference Figure 4As shown, the conveyor 205 can pick up the wafer 100 on the wafer carrier 100, and the conveyor 205 can include but is not limited to a mechanical arm that can move in the x, y and z directions; the supporting part of the mechanical arm contacts the back of the wafer 100, and carries the wafer 100 to move in the direction of the dotted arrow, the moving direction is the x direction, and the edge of the wafer 100 is scanned by two optical signals in sequence. The moving direction of the wafer 100 is perpendicular to the arrangement direction of the two optical transmitters 231, or the moving direction of the wafer 100 is perpendicular to the line connecting the two optical transmitters 231. More optical transmitters 231 can be arranged in a straight line or in an arc shape, and the radius corresponding to the arc can be the radius of the wafer 100. The mechanical arm of the conveyor 205 and the wafer 100 can be fixed by adsorption, clamped by mechanical claws, or placed by gravity of the wafer 100 to prevent slipping in the form of friction. The light emitting head 231 and the light receiving head 241 can be arranged on the wafer 100, the mechanical claw of the robot arm clamps the edge of the wafer 100, and the wafer 100 is turned over so that the back side (first surface) of the wafer 100 is scanned by the optical signal emitted from top to bottom; or the light emitting head 231 and the light receiving head 241 can be arranged under the wafer 100, the robot arm carries the wafer 100 and exposes the back side of the wafer 100 to be scanned by the optical signal from bottom to top; the light emitting head 231 and the light receiving head 241 can be arranged beside the wafer 100, and the mechanical claw rotates the wafer 100 90 degrees so that the back side of the wafer 100 is irradiated with the optical signal. The robot arm of the disclosed embodiment adopts the method of clamping the edge of the wafer 100 by the mechanical claw to pick up the wafer 100, and the light emitting head 231 and the light receiving head 241 can be arranged under the wafer 100 to avoid the wafer 100 from turning over and reduce the shielding of the optical signal by the robot arm. The optical transmitter 231 is fixed in position, and the conveyor 205 carries the wafer 100 and moves from left to right along the direction of the dotted arrow in the figure starting from the chamber door 206 to complete the scanning of the optical signal.

[0032] In some embodiments, reference Figure 5As shown, the optical receiving head 241 includes: a photoresistor GD; and a current sensing component 242 connected to the photoresistor GD; the photoresistor GD is configured to receive the optical signal reflected by the first surface of the wafer 100, and the current sensing component 242 is configured to sense the current change output by the photoresistor GD and output the current parameter; the optical receiving component 240 generates the photoelectric parameter according to the current parameter. The optical receiving head 241 is connected to the main body of the optical receiving component 240, and the optical receiving component 240 supplies power to the optical receiving head 241. The stronger the optical signal received by the photoresistor GD, the smaller the resistance, and the larger the current value sensed by the current sensing component 242; the weaker the optical signal received by the photoresistor GD, the larger the resistance, and the smaller the current value sensed by the current sensing component 242; an adjustable resistor RW can be connected in series between the photoresistor GD and the current sensing component 242 to adjust the load to adjust the current to adapt the working range of the current sensing component 242. The main body of the optical receiving component 240 can receive the current of the current sensing component 242, and can modulate or amplify it to generate a signal (i.e., photoelectric parameter) that adapts to the communication protocol of the processing unit 220, and output it to the processing unit 220 for the processing unit 220 to call or calculate.

[0033] In some embodiments, Figure 3 As an example, the edge of the back side of the wafer 100 has a first film layer 102, the first film layer 102 is an aluminum film, and the middle area 101 is a silicon substrate; the reflectivity of aluminum is greater than the reflectivity of silicon, when the light signal falls on the first film layer 102, the light receiving head 241 generates a higher current signal, when the light signal falls on the middle area 101, it has a lower current signal, and when the light signal falls on the junction of the first film layer 102 and the middle area 101, there is a sudden change from high to low in the current signal. Figure 6 As shown, taking a group of light emitting heads 231 and light receiving heads 241 as an example, the light receiving heads 241 receive the changing light reflection signals and output current signals during the movement of the wafer 100. The curve of the photoelectric parameters or current parameters output by the light receiving component 240 changing with the displacement can be shown as follows: Figure 6 For example, the S1 segment of the change curve represents the light signal falling into Figure 3 On the first film layer 102 on the back of the wafer 100, the S2 segment indicates that the optical signal falls on the boundary between the first film layer 102 and the middle area 101, and the S3 segment indicates that the optical signal falls on the middle area 101 of the wafer 100; the S4 segment indicates that the optical signal falls on the boundary between the middle area 101 and the first film layer 102, and the S5 segment indicates that the optical signal falls on the first film layer 102. Figure 6 In the curve, the photoelectric parameter point W1 corresponding to the first start scan and the photoelectric parameter point W4 corresponding to the last end scan correspond to the points on the outermost edge of the wafer 100, which can be recorded as the first characteristic point, such as Figure 3l, m or n point in the figure, the photoelectric parameter corresponding to the first characteristic point is recorded as the first characteristic parameter, and the corresponding displacement value is recorded as the first displacement parameter; point W2 and point W3 can correspond to the point at the junction of the first film layer 102 and the middle area 101 of the wafer 100, which can be recorded as the second characteristic point, such as point i, j or k, the photoelectric parameter corresponding to the second characteristic point is recorded as the second characteristic parameter, and the corresponding displacement value is recorded as the second displacement parameter. The photoelectric parameters corresponding to the electrical signals generated by other optical receiving heads 241 are also the same. Figure 6 Similarly, no further description is given here. Taking at least two light transmitting heads 231 and light receiving heads 241 as an example, when Figure 3 When the inner circle and the outer circle are not tangent, at least two Figure 6 The photoelectric parameter-displacement curve shown in FIG. 4 can obtain 4 first characteristic points and 4 second characteristic points; as described later Fig.12 When the outer circle shown is tangent to the inner circle, 4 first feature points and 3 second feature points can be obtained; thus, at least 3 first feature points can determine the position of the center O1 of the wafer 100, and at least 3 second feature points can determine the position of the center O2 of the wafer carrier 202 on the wafer 100. The relative position distance and direction of O1 and O2 can characterize the offset parameters of the wafer 100 relative to the wafer carrier 202.

[0034] In some embodiments, the vapor deposition machine 10 also includes a conveying device 205, and the conveying device 205 is configured to: pick up the wafer 100 from the wafer carrier 202, carry the wafer 100 and move along the x direction, so that the first surface of the wafer 100 is scanned by the optical signal along the x direction or the negative x direction; the processing unit 220 is configured to: during the process of the first surface of the wafer 100 being scanned by the optical signal, obtain the position information of the conveying device 205 in the x direction, generate a displacement parameter, and generate a first mapping relationship; the first mapping relationship includes a correspondence between multiple displacement parameters and multiple photoelectric parameters; the first mapping relationship can be including such as Figure 6 The corresponding curve form of the photoelectric parameter and the displacement is in the form of a table or other data form based on the curve transformation or storage for the processing unit 220 to call. The displacement parameter of the wafer 100 is characterized by the position information of the conveying device 205, and the position information of the conveying device 205 is obtained to represent the position of the wafer 100. The processing unit 220 may include but is not limited to a signal, image processor, microprocessor or other type of processor; the processing unit 220 is configured to generate the displacement parameter, including:

[0035] A plurality of first characteristic parameters and a plurality of second characteristic parameters are obtained from a plurality of photoelectric parameters in a first mapping relationship; a relative offset between a center O2 of a middle region 101 of the wafer 100 and a center O1 of the wafer 100 is generated according to first displacement parameters corresponding to the plurality of first characteristic parameters and second displacement parameters corresponding to the plurality of second characteristic parameters, and an offset parameter is generated according to the offset.

[0036] In some embodiments, a portion of the wafer 100 protrudes from the edge of the wafer carrier 202 along the radial direction of the wafer carrier 202 ; Figure 7 The wafer 100 shown includes: a first film layer 102, located at the edge of the first surface of the wafer 100; the first film layer 102 covers the area of ​​the first surface of the wafer 100 protruding from the wafer carrier 202, the first film layer 102 exposes the middle area 101 of the first surface of the wafer 100, and the middle area 101 corresponds to the wafer carrier 202; the cross-sectional figure of the first film layer 102 on the plane parallel to the wafer carrier 202 includes: a first circular edge (outer circle) and a second circular edge (inner circle) that are arranged, the second circular edge is closer to the center of the wafer 100 relative to the first circular edge; multiple first characteristic parameters correspond to the first circular edge, and multiple second characteristic parameters correspond to the junction of the second circular edge and the first surface of the wafer 100.

[0037] The first characteristic parameter is Figure 3 When any point on the outer edge of the first film layer 102 is scanned by the optical signal, the photoelectric parameters generated by the optical receiving component 240, such as obtaining Figure 6 The photoelectric parameters corresponding to the points W1 and W4 are used as the first characteristic parameters, and the position information of the conveying device 205 at this time is obtained as the displacement parameter of the wafer 100; the second characteristic parameter is Figure 3 When the boundary between the inner edge of the first film layer 102 and the middle area 101 is scanned by the optical signal, the photoelectric parameters generated by the optical receiving component 240, such as the acquisition Figure 6 The photoelectric parameter corresponding to the point W2 or W3 is used as the second characteristic parameter, and the position information of the conveying device 205 at this time is obtained as the displacement parameter of the wafer 100 .

[0038] In some embodiments, the calibration can be performed by testing Figure 6The photoelectric parameter distribution intervals of the S1 to S5 segments shown are provided for the processing unit 220 to refer to and call the required first characteristic parameter, first displacement parameter, second characteristic parameter, and second displacement parameter. The center position of the wafer 100 is calculated based on the three first displacement parameters corresponding to at least three first characteristic parameters; the center position of the middle area 101 of the wafer 100 is generated based on the three second displacement parameters corresponding to at least three second characteristic parameters, that is, the position of the center of the wafer carrier 202 on the back of the wafer 100; the relative offset between the center of the middle area of ​​the wafer 100 and the center of the wafer 100 is calculated to characterize the offset parameter of the wafer 100 relative to the wafer carrier 202.

[0039] In some embodiments, the characteristic parameters in the first mapping relationship are distributed in the first numerical interval, the second numerical interval and the third numerical interval; the second numerical interval is between the first numerical interval and the third numerical interval; the processing unit 220 is configured to obtain each characteristic parameter, which may include:

[0040] A plurality of first characteristic parameters are obtained from the first numerical interval, and a plurality of second characteristic parameters are obtained from the second numerical interval. The first numerical interval is the distribution range of the photoelectric parameters corresponding to the S1 and S5 stages, that is, the photoelectric parameters when scanning the outer edge of the wafer 100 fluctuate within the first numerical interval; the values ​​that first appear and last appear in the first numerical interval are obtained as the first characteristic parameters, and the corresponding first displacement parameters are obtained, that is, for example, Figure 6 The photoelectric parameters and displacement parameters of the W1 and W4 points in the example. The second numerical interval is the distribution range of the photoelectric parameters corresponding to the S2 stage and the S4 stage, that is, the photoelectric parameters when scanning the junction of the first film layer 102 and the middle area 101 of the wafer 100 fluctuate within the second numerical interval. Because the junction will be scanned through quickly, the displacement distance corresponding to the S2 stage will be very short, and the signal may suddenly change or flip without a gradually decreasing process. The photoelectric parameters of any point in the S2 stage can be taken as the second characteristic parameter at will. The third numerical interval is the distribution range of the photoelectric parameters corresponding to the S3 stage, that is, the photoelectric parameters when scanning the middle area 101 of the wafer 100 fluctuate within the third numerical interval. The second numerical interval appears between the first numerical interval and the third numerical interval. The photoelectric parameters can be obtained as the second characteristic parameters and the corresponding second displacement parameters in the transition stage between the first numerical interval and the third numerical interval.

[0041] In some embodiments, the processing unit 220 is further configured to: obtain position information of a fixed reference point, and determine a first reference system according to the fixed reference point; the processing unit 220 is configured to generate the offset parameter, including:

[0042] The first displacement parameters corresponding to the multiple first characteristic parameters and the position information of each light emitting head 231 are converted into multiple first coordinates in the first reference system; the second displacement parameters corresponding to the multiple second characteristic parameters and the corresponding position information of the multiple light emitting heads 231 are converted into multiple second coordinates in the first reference system, and the first center coordinates of the first surface of the wafer 100 are determined according to the multiple first coordinates; the second center coordinates of the middle area of ​​the wafer 100 (i.e., the part of the first surface covering the wafer carrier 202) are determined according to the multiple second coordinates; and the offset parameter is generated according to the relative offset of the first center coordinate and the second center coordinate.

[0043] Reference Figure 7As shown, a rectangular coordinate system can be established based on a fixed reference point as a reference point, such as establishing a first reference system yox with point O as a reference point. Point O can be a fixed reference point for controlling the movement of the conveyor 205. The control unit of the machine controls the movement of the conveyor 205 in the x, y and z directions based on the fixed reference point. Taking the two optical signals emitted by the two optical transmitters 231 as an example, the conveyor 205 carries the wafer 100 along the x direction and moves relative to the optical signal so that the optical signal scans the back of the wafer 100; one optical signal can scan points a, c, e, and g in sequence, and the other optical signal can scan points b, d, f, and h in sequence; point a and point b may not appear at the same time, that is, they may be scanned one after another. At least three points among a, b, g, and h are randomly selected as first feature points, and the first displacement parameters of the wafer 100 when the first feature parameters of the multiple first feature points appear are obtained. The first displacement parameters are formed into multiple first coordinates (y, x) according to the fixed reference point O of the first reference system, such as a(y1, x1) in which y1 is the distance between the corresponding light emitting head 231 and the fixed reference point O in the y direction, and x1 is the distance between the wafer 100 and the fixed reference point in the x direction when the wafer 100 is scanned to point a. The coordinates of the center O1 of the wafer 100, that is, the first center coordinates, can be calculated using the coordinates of at least three first feature points. At least three points among c, d, e, and f are randomly selected as the second characteristic points, and the second displacement parameters of the wafer 100 when the second characteristic parameters of the multiple second characteristic points appear are obtained. The second displacement parameters are formed into multiple second coordinates according to the fixed reference point O of the first reference system, such as (y2, x2). The coordinates of the center O2 of the middle area 101 of the wafer 100 can be calculated with the coordinates of at least three first characteristic points, that is, the position coordinates of the center of the wafer carrier 202 on the back of the wafer 100, that is, the second center coordinates; according to the coordinates of O1 and O2, the offset parameters of the wafer 100 relative to the wafer carrier 202 can be calculated, including the offset distance and the offset direction. According to the size of the offset, the machine is adjusted or paused before the next wafer is fed, and the conveying device 205 is detected or reset; for example, the conveying device 205 can be reversely adjusted or compensated according to the offset distance and the offset angle, so that the center of the wafer 100 coincides with the center of the wafer carrier 202 or there is an offset within a certain error range. When the wafer 100 is transferred out or into the process chamber 201, the direction angle of the notch 103 of the wafer 100 can be confirmed, and the direction of the notch 103 and the center deviation direction of the wafer 100 can be used to compensate for the next transfer; or the direction of the notch 103 of the wafer 100 can be fixed when the wafer 100 is transferred in or out, such as parallel to the optical signal scanning direction. If a light signal just happens to scan the notch 103 of the wafer 100, the photoelectric parameters will have noise, and this part of the noise signal can be not selected as the characteristic parameter, and calculated based on other characteristic points, or the position of the wafer 100 can be rotated and transformed by the conveying device 205, and then the wafer 100 can be scanned.

[0044] In some embodiments, when the wafer 100 moves along the x-direction, the two optical signals are recorded as the first optical signal 21 and the second optical signal 22, and the first optical signal 21 and the second optical signal 22 are fixed; the conveying device 205 carries the wafer 100 to move along the x-direction, and the first optical signal 21 and the second optical signal 22 are sequentially recorded as Figure 8 , Fig. 9 , Fig.10 as well as Fig.11 The illustrated sequence scans the back side of the wafer 100. The scanning process may be a continuous scan, Figure 8 This is an example of a position where the first optical signal 21 and the second optical signal 22 are simultaneously on the back side of the wafer 100 at a certain displacement point in the scanning process.

[0045] In some embodiments, reference Fig.12 As shown, when the wafer 100 intersects with the wafer carrier 100 with a large offset, the outer circle and the inner circle may be tangent, and the outer circle edge of the first film layer 102 may be tangent to the inner circle edge; it may happen that one optical signal can only scan one intersection point between the first film layer 102 and the middle area 101 of the wafer 100, and the other optical signal can still scan two intersection points, and the three intersection points can calculate the center of the middle area 101 of the wafer 100. For example, one optical signal scans points a, c, e, and g in sequence, and the other optical signal can scan points b, f, and h in sequence. Points a, g, and h can be obtained as the first feature points, and the first center coordinates of the wafer 100 can be calculated based on the coordinates of the three first feature points; points c, e, and f can be obtained as the second feature points, and the second center coordinates of the middle area 101 of the wafer 100 can be calculated based on the coordinates of the three second feature points; the offset of the two centers is calculated based on the two center coordinates to characterize the offset of the center of the wafer 100 relative to the wafer carrier 202.

[0046] In some embodiments, a plurality of light emitting heads 231 are spaced apart in the y direction, and the y direction is perpendicular to the x direction; the first light emitting head among the plurality of light emitting heads 231 is configured as a fixed reference point, and the value of the first coordinate includes: the displacement of the wafer 100 or the conveying device 205 relative to the first light emitting head in the x direction, and the displacement of the optical signal relative to the first light emitting head in the y direction. A reference system can be established by taking one of the plurality of light emitting heads 231 as a specified reference point, such as Fig.13 In the second reference system yax shown, when the wafer 100 just contacts the first optical signal 21 emitted by the first optical transmitter 231, the displacement of the transmission device 205 is reset to zero and the displacement of the transmission position is re-recorded. At this time, point a is the position where the optical transmitter 231 is located, such as Fig.16The coordinates of the scanning point of the second optical signal 22 in the image are (y3, x3), where x3 is the relative distance of the second optical signal 22 relative to a in the y direction, and y3 is the relative distance of the second optical signal 22 relative to a in the x direction. In some other embodiments, the line connecting the two optical transmitter heads 231 can be used as Fig.14 The horizontal axis of the coordinate system is Fig.13 The second reference system yax is laterally shifted to form Fig.14 The third reference system ya'x.

[0047] In some embodiments, when the wafer 100 moves along the x-direction, the two optical signals are recorded as the first optical signal 21 and the second optical signal 22, and the first optical signal 21 and the second optical signal 22 are fixed; the conveying device 205 carries the wafer 100 to move along the x-direction, and the first optical signal 21 and the second optical signal 22 are sequentially recorded as Fig.13 , Fig.15 , Fig.16 as well as Fig.17 The illustrated sequence scans the back side of wafer 100 .

[0048] In some embodiments, reference Figure 4 As shown, the light receiving head 241 is disposed adjacent to the light transmitting head 231 to reduce the propagation error of the light signal and improve the scanning accuracy.

[0049] In some embodiments, reference Figure 1 As shown, the vapor deposition machine 10 further includes: a deposition ring 203 sleeved on the side wall of the wafer carrier 202 ; and the first surface of the wafer 100 covers at least a portion of the deposition ring 203 .

[0050] According to some aspects of the embodiments of the present disclosure, Fig.18 Provide a Figure 1 as well as Figure 4 The control method of the vapor deposition machine 10 includes:

[0051] Controlling the conveying device to pick up the wafer from the wafer carrier and transfer it out of the process chamber, so that the wafer moves along a first direction on the side where the multiple light emitting heads emit light signals, so that the first surface of the wafer in contact with the wafer carrier is scanned by the light signal; the first direction is perpendicular to the emission direction of the light signal; the reflectivity of the edge and the middle area of ​​the first surface of the wafer is different, and the outer contour of the middle area of ​​the first surface includes an arc;

[0052] When the first surface of the wafer is scanned by the optical signal, controlling the optical receiving component to receive the optical reflection signal of the first surface of the wafer, and generating a plurality of photoelectric parameters according to the optical reflection signal;

[0053] A plurality of displacement parameters of the wafer in the process of being scanned by the optical signal are acquired, and an offset parameter of the wafer relative to the wafer carrier is generated according to the plurality of displacement parameters and the plurality of photoelectric parameters.

[0054] In some embodiments, the obtaining of multiple displacement parameters of the wafer 100 during the process of being scanned by the optical signal includes: obtaining the position information of the transmission device 205 in the first direction during the process of the first surface of the wafer 100 being scanned by the optical signal, generating the displacement parameter, and generating a first mapping relationship; the first mapping relationship includes a correspondence between multiple displacement parameters and the multiple photoelectric parameters; generating the offset parameter includes: obtaining multiple first characteristic parameters and multiple second characteristic parameters from the multiple photoelectric parameters in the first mapping relationship; generating a relative offset between the center of the middle area 101 of the wafer 100 and the center of the wafer 100 according to the first displacement parameters corresponding to the multiple first characteristic parameters and the second displacement parameters corresponding to the multiple second characteristic parameters, and generating the offset parameter according to the offset.

[0055] In some embodiments, the characteristic parameters in the first mapping relationship are distributed in a first numerical interval, a second numerical interval and a third numerical interval; the second numerical interval is between the first numerical interval and the third numerical interval; the control method includes: obtaining multiple first characteristic parameters from the first numerical interval, and obtaining multiple second characteristic parameters from the second numerical interval.

[0056] In some embodiments, the control method also includes: obtaining position information of a fixed reference point, and determining a first reference system based on the fixed reference point; generating the offset parameters, including: converting a first displacement parameter corresponding to a plurality of the first characteristic parameters, and the corresponding position information of a plurality of light emitting heads 231, into a plurality of first coordinates in the first reference system; converting a second displacement parameter corresponding to a plurality of the second characteristic parameters, and the corresponding position information of a plurality of light emitting heads 231, into a plurality of second coordinates in the first reference system, and determining a first center coordinate of the first surface of the wafer 100 based on the plurality of first coordinates; determining a second center coordinate of a middle area 101 (i.e., a portion covering the wafer carrier 202) of the first surface of the wafer 100 based on the plurality of second coordinates; and generating the offset parameters based on the relative offset of the first center coordinate and the second center coordinate.

[0057] In some embodiments, the multiple light emitting heads 231 are spaced apart in a second direction, and the second direction is perpendicular to the first direction; taking the first light emitting head 231 among the multiple light emitting heads 231 as the fixed reference point, the value of the first coordinate includes: the displacement relative to the first light emitting head 231 in the first direction, and the displacement relative to the first light emitting head 231 in the second direction.

[0058] In some embodiments, a partial area of ​​the wafer 100 protrudes from the edge of the wafer carrier plate 202 along the radial direction of the wafer carrier plate 202; the wafer 100 includes: a first film layer 102, located at the edge of the first surface of the wafer 100; the first film layer 102 covers the area of ​​the first surface of the wafer 100 protruding from the wafer carrier plate 202, and the first film layer 102 exposes the middle area of ​​the first surface of the wafer 100; the cross-sectional figure of the first film layer 102 on a plane parallel to the wafer carrier plate 202 includes: a first circular edge and a second circular edge, the second circular edge is closer to the center of the wafer 100 relative to the first circular edge; the multiple first characteristic parameters correspond to the first circular edge, and the multiple second characteristic parameters correspond to the junction of the second circular edge and the first surface of the wafer 100.

[0059] According to some aspects of the embodiments of the present disclosure, there is provided a readable storage medium having a computer program stored thereon, wherein the computer program implements any one of the control methods described above when executed.

[0060] The storage medium can be a magnetic random access memory (FRAM), a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), a flash memory, a magnetic surface storage, an optical disk, or a compact disc read-only memory (CD-ROM) and the like.

[0061] In some embodiments, executable instructions may be in the form of a program, software, software module, script or code, written in any form of programming language (including compiled or interpreted languages, or declarative or procedural languages), and may be deployed in any form, including as a stand-alone program or as a module, component, subroutine or other unit suitable for use in a computing environment.

[0062] As an example, executable instructions may, but need not, correspond to a file in a file system, may be stored as part of a file that stores other programs or data, such as in one or more scripts in a HyperText Markup Language (HTML) document, in a single file dedicated to the program in question, or in multiple coordinated files (e.g., files storing one or more modules, subroutines, or code portions).

[0063] As an example, the executable instructions may be deployed to be executed on one electronic device, or on multiple electronic devices located at one site, or on multiple electronic devices distributed at multiple sites and interconnected by a communication network.

[0064] The above description is only a specific implementation mode of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure.

Claims

1. A vapor deposition machine, characterized in that: include: A process chamber configured to accommodate a wafer and deposit a film layer on a surface of the wafer; A wafer carrier plate is located in the process chamber; The wafer carrier is configured to carry a first surface of the wafer; A photoelectric detection device is located outside the process chamber; The photoelectric detection device includes a light emitting component, a light receiving component, and a processing unit connected to the light receiving component; the light emitting component includes a plurality of light emitting heads arranged at intervals; the light emitting heads are configured as follows: When the wafer moves along a first direction on a side where the optical transmitter head transmits an optical signal, an optical signal is transmitted to a first surface of the wafer; the first direction is perpendicular to the transmission direction of the optical signal; the reflectivity of the edge and the middle area of ​​the first surface of the wafer are different, and the outer contour of the middle area of ​​the first surface includes an arc; The light receiving assembly includes a light receiving head corresponding to the light transmitting head; The light receiving component is configured to receive a light reflection signal from the first surface of the wafer and generate a plurality of photoelectric parameters according to the light reflection signal; The processing unit is configured to: acquire a plurality of displacement parameters of the wafer during the process in which the first surface of the wafer is scanned by the optical signal; And generating an offset parameter of the wafer relative to the wafer carrier according to a plurality of displacement parameters and a plurality of the photoelectric parameters.

2. The vapor deposition machine according to claim 1, characterized in that: The vapor deposition machine further includes a conveying device, which is configured to: pick up the wafer from the wafer carrier, carry the wafer and move along the first direction, so that the first surface of the wafer is scanned by the optical signal; The processing unit is configured to: acquire the position information of the transmission device in the first direction, generate the displacement parameter, and generate a first mapping relationship during the process of the first surface of the wafer being scanned by the optical signal; The first mapping relationship includes a correspondence relationship between the plurality of displacement parameters and the plurality of photoelectric parameters; The processing unit is configured to generate the offset parameter, including: Acquire a plurality of first characteristic parameters and a plurality of second characteristic parameters from a plurality of photoelectric parameters in the first mapping relationship; According to the first displacement parameters corresponding to the first characteristic parameters and the second displacement parameters corresponding to the second characteristic parameters, the relative offset between the center of the middle area of ​​the wafer and the center of the wafer is generated, and the offset parameter is generated according to the offset.

3. The vapor deposition machine according to claim 2, characterized in that: The characteristic parameters in the first mapping relationship are distributed in a first numerical interval, a second numerical interval and a third numerical interval; the second numerical interval is between the first numerical interval and the third numerical interval; the processing unit is configured as: A plurality of first characteristic parameters are obtained from the first numerical interval, and a plurality of second characteristic parameters are obtained from the second numerical interval.

4. The vapor deposition machine according to claim 2, characterized in that: The processing unit is further configured to: Acquire position information of a fixed reference point, and determine a first reference system according to the fixed reference point; The processing unit is configured to generate the offset parameter, including: converting the first displacement parameters corresponding to the first characteristic parameters into a plurality of first coordinates in the first reference system; converting the second displacement parameters corresponding to the second characteristic parameters into a plurality of second coordinates in the first reference system; Determine a first center coordinate of a first surface of the wafer according to the plurality of first coordinates; Determine a second center coordinate of the middle area of ​​the wafer according to the plurality of second coordinates; The offset parameter is generated according to the relative offset between the first circle center coordinates and the second circle center coordinates.

5. The vapor deposition machine according to claim 4, characterized in that: The plurality of light emitting heads are arranged at intervals in a second direction, and the second direction is perpendicular to the first direction; A first light emitting head among the plurality of light emitting heads is configured as the fixed reference point, and the value of the first coordinate includes: The wafer is displaced relative to the first light transmitting head in the first direction, and the optical signal is displaced relative to the first light transmitting head in the second direction.

6. The vapor deposition machine according to claim 2, characterized in that: A partial area of ​​the wafer protrudes from the edge of the wafer carrying plate in the radial direction of the wafer carrying plate; The wafer comprises: a first film layer located at the edge of the first surface of the wafer; the first film layer covers the area of ​​the first surface of the wafer protruding from the wafer carrier plate, and the first film layer exposes the middle area of ​​the first surface of the wafer; The cross-sectional shape of the first film layer on a plane parallel to the wafer carrier includes: a first circular edge and a second circular edge, the second circular edge is closer to the center of the wafer relative to the first circular edge; The plurality of first characteristic parameters correspond to the first circular edge, and the plurality of second characteristic parameters correspond to the boundary between the second circular edge and the first surface of the wafer.

7. The vapor deposition machine according to claim 1, characterized in that: The optical receiving head comprises: A photoresistor; and a current sensing component connected to the photoresistor; The photoresistor is configured to receive the light signal reflected by the first surface of the wafer, and the current sensing component is configured to sense the current change output by the photoresistor and output the current parameter; The light receiving component generates the photoelectric parameter according to the current parameter.

8. The vapor deposition machine according to claim 7, characterized in that: The light receiving head is arranged adjacent to the light transmitting head.

9. The vapor deposition machine according to claim 1, characterized in that: The vapor deposition machine also includes: A deposition ring is sleeved on the side wall of the wafer carrier; the first surface of the wafer covers at least a part of the deposition ring.

10. A method for controlling a vapor deposition machine, characterized in that: include: Controlling the conveying device to pick up the wafer from the wafer carrier and transfer it out of the process chamber, so that the wafer moves along a first direction on the side where the multiple light emitting heads emit light signals, so that the first surface of the wafer in contact with the wafer carrier is scanned by the light signal; the first direction is perpendicular to the emission direction of the light signal; the reflectivity of the edge and the middle area of ​​the first surface of the wafer is different, and the outer contour of the middle area of ​​the first surface includes an arc; When the first surface of the wafer is scanned by the optical signal, controlling the optical receiving component to receive the optical reflection signal of the first surface of the wafer, and generating a plurality of photoelectric parameters according to the optical reflection signal; A plurality of displacement parameters of the wafer in the process of being scanned by the optical signal are acquired, and an offset parameter of the wafer relative to the wafer carrier is generated according to the plurality of displacement parameters and the plurality of photoelectric parameters.

11. The control method according to claim 10, characterized in that: The acquiring of a plurality of displacement parameters of the wafer during scanning by the optical signal comprises: In the process of scanning the first surface of the wafer by the optical signal, obtaining the position information of the transmission device in the first direction, generating the displacement parameter, and generating a first mapping relationship; the first mapping relationship includes a correspondence relationship between a plurality of the displacement parameters and the plurality of photoelectric parameters; Generating the offset parameter includes: Acquire a plurality of first characteristic parameters and a plurality of second characteristic parameters from a plurality of photoelectric parameters in the first mapping relationship; According to the first displacement parameters corresponding to the first characteristic parameters and the second displacement parameters corresponding to the second characteristic parameters, the relative offset between the center of the middle area of ​​the wafer and the center of the wafer is generated, and the offset parameter is generated according to the offset.

12. The control method according to claim 11, characterized in that: The characteristic parameters in the first mapping relationship are distributed in a first numerical interval, a second numerical interval and a third numerical interval; the second numerical interval is between the first numerical interval and the third numerical interval; the control method includes: A plurality of first characteristic parameters are obtained from the first numerical interval, and a plurality of second characteristic parameters are obtained from the second numerical interval.

13. The control method according to claim 11, characterized in that: The control method further comprises: Acquire position information of a fixed reference point, and determine a first reference system according to the fixed reference point; Generate the offset parameters, including converting the first displacement parameters corresponding to the first characteristic parameters into a plurality of first coordinates in the first reference system; converting the second displacement parameters corresponding to the second characteristic parameters into a plurality of second coordinates in the first reference system; Determine a first center coordinate of a first surface of the wafer according to the plurality of first coordinates; Determine a second center coordinate of a middle area of ​​the first surface of the wafer according to the plurality of second coordinates; The offset parameter is generated according to the relative offset between the first circle center coordinates and the second circle center coordinates.

14. The control method according to claim 13, characterized in that: The plurality of light emitting heads are arranged at intervals in a second direction, and the second direction is perpendicular to the first direction; Taking the first light emitting head among the plurality of light emitting heads as the fixed reference point, the value of the first coordinate includes: The wafer is displaced relative to the first light transmitting head in the first direction, and the optical signal is displaced relative to the first light transmitting head in the second direction.

15. The control method according to claim 13, characterized in that: A partial area of ​​the wafer protrudes from the edge of the wafer carrying plate in the radial direction of the wafer carrying plate; The wafer comprises: a first film layer located at the edge of the first surface of the wafer; the first film layer covers the area of ​​the first surface of the wafer protruding from the wafer carrier plate, and the first film layer exposes the middle area of ​​the first surface of the wafer; The cross-sectional shape of the first film layer on a plane parallel to the wafer carrier includes: a first circular edge and a second circular edge, the second circular edge is closer to the center of the wafer relative to the first circular edge; The plurality of first characteristic parameters correspond to the first circular edge, and the plurality of second characteristic parameters correspond to the boundary between the second circular edge and the first surface of the wafer.

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