Semiconductor test radio frequency probe

Abstract

A semiconductor test radio frequency probe disclosed by the present invention comprises a shell and a probe, the shell comprises an upper wall surface, a lower wall surface, a front wall surface and a rear wall surface, the front wall surface and the rear wall surface are respectively located at two sides of the shell in the front-back direction, and the upper wall surface and the lower wall surface are respectively located at two sides of the shell in the up-down direction; the probe comprises a connector, a testing head and a cable, the cable is at least partially connected between the connector and the testing head, the connector comprises a first middle connecting part and a second middle connecting part, the first middle connecting part is located in the shell, the second middle connecting part is located outside the shell, and the second middle connecting part is located on the upper wall surface side; in a width direction perpendicular to the front-back direction, respective front end surfaces of the first contact portion, the second contact portion, and the third contact portion are arranged in a staggered manner. The probes are arranged in a staggered manner, the distance between the probes is increased, the size of parasitic capacitance is inversely proportional to the distance between the probes, and the larger the distance between the probes is, the smaller the parasitic capacitance is, so that the parasitic capacitance between the probes can be effectively reduced, and the transmission integrity of high-frequency signals is facilitated.

Description

Technical Field

[0001] The invention relates to the field of semiconductor testing, and in particular to a semiconductor testing radio frequency probe. Background Art

[0002] In the existing radio frequency probes, the needle tips are aligned in the width direction, such as the attached Figure 5 d and the specification disclose elastic conductive fingers 70, 72a and 72b, and the front end faces of the RF probes are aligned in the width direction. The needle tips aligned in this way have large parasitic capacitance, and the parasitic capacitance between the probes and the substrate, between the probes, and between the probes and the ground will affect the signal as the frequency increases. When a high-frequency signal passes through a probe with large parasitic capacitance, it will cause signal attenuation and phase shift, affecting the integrity of the signal. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a semiconductor test radio frequency probe which is beneficial to the integrity of high-frequency signal transmission.

[0004] In order to solve the above technical problems, the technical solution of the present invention is as follows:

[0005] A semiconductor testing radio frequency probe, comprising:

[0006] A shell, the shell comprising an upper wall, a lower wall, a front wall and a rear wall, the front wall and the rear wall are respectively located on both sides of the shell in a front-to-rear direction, and the upper wall and the lower wall are respectively located on both sides of the shell in a top-to-bottom direction; and

[0007] A probe, the probe comprising a connector, a test head and a cable, the cable being at least partially connected between the connector and the test head, the connector comprising a first connection portion and a second connection portion, the first connection portion being located inside the shell, the second connection portion being located outside the shell, and the second connection portion being located on the upper wall surface, the cable passing through the front wall surface from the inside of the shell, and the test head being connected to the front end portion of the cable;

[0008] The test head comprises a first contact piece, a second contact piece and a third contact piece which are spaced apart from each other, the second contact piece is located between the first contact piece and the third contact piece, the first contact piece comprises a first welding portion connected to the cable and a first contact portion located at a front end of the first welding portion, the second contact piece comprises a second welding portion connected to the cable and a second contact portion located at a front end of the second welding portion, and the third contact piece comprises a third welding portion connected to the cable and a third contact portion located at a front end of the third welding portion;

[0009] In a width direction perpendicular to the front-to-back direction, front end surfaces of the first contact portion, the second contact portion and the third contact portion are arranged alternately.

[0010] Compared with the prior art, the front end faces of the first contact portion, the second contact portion and the third contact portion of the semiconductor test radio frequency probe of the present invention are arranged in an alternating manner, that is, the probes are staggered, the distance between the probes increases, and the size of the parasitic capacitance is inversely proportional to the distance between the probes. The larger the distance between the probes, the smaller the parasitic capacitance. This can effectively reduce the parasitic capacitance between the probes, which is beneficial to the transmission integrity of the high-frequency signal.

[0011] Further, the test head includes a fourth contact piece and a fifth contact piece which are spaced apart from each other, the fourth contact piece is located between the third contact piece and the fifth contact piece, the fourth contact piece includes a fourth welding portion connected to the cable and a fourth contact portion located at a front end of the fourth welding portion, and the fifth contact piece includes a fifth welding portion connected to the cable and a fifth contact portion located at a front end of the fifth welding portion;

[0012] In the front-to-back direction, the first contact portion, the third contact portion and the fifth contact portion are all located in front of the second contact portion and the fourth contact portion.

[0013] Further, in the front-to-back direction, the first contact portion, the third contact portion and the fifth contact portion are located in a first column, the second contact portion and the fourth contact portion are located in a second column, the first column and the second column are arranged alternately, and the first column is located in front of the second column.

[0014] Further, the orthographic projections of the front end surfaces of the first contact portion, the third contact portion and the fifth contact portion in the width direction coincide with each other, and the orthographic projections of the front end surfaces of the second contact portion and the fourth contact portion in the width direction coincide with each other.

[0015] Further, the first contact piece includes a first middle connecting portion connected between the first welding portion and the first contact portion, the second contact piece includes a second middle connecting portion connected between the second welding portion and the second contact portion, the third contact piece includes a third middle connecting portion connected between the third welding portion and the third contact portion, the fourth contact piece includes a fourth middle connecting portion connected between the fourth welding portion and the fourth contact portion, and the fifth contact piece includes a fifth middle connecting portion connected between the fifth welding portion and the fifth contact portion;

[0016] In the width direction, the width of the first contact portion is smaller than the width of the first middle connecting portion, the width of the second contact portion is smaller than the width of the second middle connecting portion, the width of the third contact portion is smaller than the width of the third middle connecting portion, the width of the fourth contact portion is smaller than the width of the fourth middle connecting portion, and the width of the fifth contact portion is smaller than the width of the fifth middle connecting portion;

[0017] The first central connecting portion extends inwardly obliquely relative to the first welding portion, the second central connecting portion extends inwardly obliquely relative to the second welding portion, the fourth central connecting portion extends inwardly obliquely relative to the fourth welding portion, the fifth central connecting portion extends inwardly obliquely relative to the fifth welding portion, and the third central connecting portion gradually narrows from the third welding portion in a direction approaching the third contact portion; the first central connecting portion, the second central connecting portion, the third central connecting portion, the fourth central connecting portion, and the fifth central connecting portion are arranged to be gathered together.

[0018] Furthermore, the front ends of the first central connecting portion, the third central connecting portion and the fifth central connecting portion are all located in front of the front ends of the second central connecting portion and the fourth central connecting portion;

[0019] In the width direction, the front ends of the first central connecting portion, the third central connecting portion and the fifth central connecting portion are located in the same row, and the front ends of the second central connecting portion and the fourth central connecting portion are located in the same row.

[0020] Further, the first contact portion, the second contact portion, the third contact portion, the fourth contact portion and the fifth contact portion each include a top surface, a bottom surface, an inclined surface and a front end surface connected between the top surface and the bottom surface, the inclined surface extends forward and downward from the top surface, and the front end surface is perpendicular to the top surface and the bottom surface;

[0021] The extension surfaces of the inclined surfaces of the first, second, third, fourth and fifth contact parts are located in the same plane, and the extension surfaces of the front end surfaces of the first, second, third, fourth and fifth contact parts are located in the same plane.

[0022] Furthermore, the third central connecting part includes a tower and a frustum, the frustum is connected to the front end of the tower, the width of the tower at the connection with the third welding part is greater than the width of the third welding part, and the width of the connection between the frustum and the third contact part is less than the width of the connection between the frustum and the tower.

[0023] Further, the first contact piece, the second contact piece, the third contact piece, the fourth contact piece and the fifth contact piece are respectively configured as a grounding piece, a signal piece, a grounding piece, a signal piece and a grounding piece.

[0024] Furthermore, the connector includes an external thread, the housing includes an internal thread, and the connector and the housing are detachably connected via the external thread and the internal thread;

[0025] The housing includes a first housing and a second housing, and the first housing and the second housing are detachably connected together. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a three-dimensional diagram of a semiconductor test radio frequency probe according to an embodiment of the present invention;

[0027] Figure 2 is a three-dimensional diagram from another perspective of a semiconductor test radio frequency probe according to an embodiment of the present invention;

[0028] Figure 3 is an exploded view of a semiconductor test radio frequency probe according to an embodiment of the present invention;

[0029] Figure 4 is an exploded view of a semiconductor test radio frequency probe according to an embodiment of the present invention from another perspective;

[0030] Figure 5 It is a partial enlarged view of a semiconductor test radio frequency probe according to an embodiment of the present invention;

[0031] Figure 6 It is a partial enlarged view from another perspective of a semiconductor test radio frequency probe according to an embodiment of the present invention;

[0032] Figure 7 is a three-dimensional diagram of a contact sheet according to an embodiment of the present invention;

[0033] Figure 8 FIG. 4 is a top view of a contact sheet according to an embodiment of the present invention.

[0034] Explanation of reference numerals in the figures: housing 10, upper wall 11, first wall 111, second wall 112, lower wall 12, front wall 13, rear wall 14, first shell 15, first connecting hole 151, first contact surface 152, first through hole 155, second shell 16, second connecting hole 161, second contact surface 162, second through hole 165, bolt 17, probe 50, connecting head 51, first middle connecting portion 542, second middle connecting portion 552, test head 52, cable 53, first contact sheet 54, first welding portion 541, first middle connecting portion 5 42, first contact portion 543, second contact piece 55, second welding portion 551, second middle connecting portion 552, second contact portion 553, third contact piece 56, third welding portion 561, third middle connecting portion 562, third contact portion 563, fourth contact piece 57, fourth welding portion 571, fourth middle connecting portion 572, fourth contact portion 573, fifth contact piece 58, fifth welding portion 581, fifth middle connecting portion 582, fifth contact portion 583, top surface 61, bottom surface 62, inclined surface 63, front end surface 64, tower 65, and cone 66. DETAILED DESCRIPTION

[0035] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are merely examples of devices and methods consistent with some aspects of the present invention as detailed in the appended claims.

[0036] The terms used in the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The singular forms "a", "said" and "the" used in the present invention and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0037] It should be understood that the words "first", "second" and similar words used in the specification and claims of the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "an" do not indicate a quantity limitation, but indicate the existence of at least one; "plurality" indicates a quantity of two or more. Unless otherwise specified, words such as "front", "rear", "lower" and / or "upper" are only for convenience of description and are not limited to one position or one spatial orientation. Words such as "include" or "comprise" and similar words mean that the elements or objects appearing before "include" or "comprises" include the elements or objects listed after "include" or "comprises" and their equivalents, and do not exclude other elements or objects.

[0038] The exemplary embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the features of the following embodiments and implementations may complement or be combined with each other.

[0039] like Figures 1 to 8 As shown, a semiconductor test radio frequency probe according to the present invention comprises a housing 10 and a probe 50 .

[0040] The shell 10 includes an upper wall 11, a lower wall 12, a front wall 13 and a rear wall 14. The front wall 13 and the rear wall 14 are respectively located on both sides of the shell 10 in the front-to-back direction, and the upper wall 11 and the lower wall 12 are respectively located on both sides of the shell 10 in the up-down direction.

[0041] The probe 50 includes a connector 51, a test head 52 and a cable 53. The cable 53 is at least partially connected between the connector 51 and the test head 52. The connector 51 includes a first connection portion 511 and a second connection portion 512. The first connection portion 511 is located inside the shell 10, and the second connection portion 512 is located outside the shell 10. The second connection portion 512 is located on the side of the upper wall 11. The cable 53 passes through the front wall 13 from the inside of the shell 10 to the front, and the test head 52 is connected to the front end of the cable 53.

[0042] The test head 52 includes a first contact piece 54, a second contact piece 55 and a third contact piece 56 which are spaced apart from each other. The second contact piece 55 is located between the first contact piece 54 and the third contact piece 56. The first contact piece 54 includes a first welding portion 541 connected to the cable 53 and a first contact portion 543 located at the front end of the first welding portion 541. The second contact piece 55 includes a second welding portion 551 connected to the cable 53 and a second contact portion 553 located at the front end of the second welding portion 551. The third contact piece 56 includes a third welding portion 561 connected to the cable 53 and a third contact portion 563 located at the front end of the third welding portion 561.

[0043] In the width direction perpendicular to the front-to-back direction (i.e. Figure 1 In the left-right direction, the front end faces 64 of the first contact portion 543, the second contact portion 553 and the third contact portion 563 are arranged in a staggered manner. The front end faces 64 of the first contact portion 543, the second contact portion 553 and the third contact portion 563 of the semiconductor test radio frequency probe 50 of the present invention are arranged in a staggered manner, that is, the probes 50 are staggered, the distance between the probes 50 increases, the magnitude of the parasitic capacitance is inversely proportional to the distance between the probes 50, the greater the distance between the probes 50, the smaller the parasitic capacitance, so that the parasitic capacitance between the probes 50 can be effectively reduced, thereby facilitating the transmission integrity of the high-frequency signal.

[0044] In contrast, in a non-misaligned probe design, the probes are closer together and are usually arranged neatly in parallel. This design tends to result in higher parasitic capacitance and inductance because the electric and magnetic fields between the probes are more strongly coupled, which increases signal interference and loss, thereby reducing measurement accuracy. Therefore, a non-misaligned design is not as effective as a misaligned design in reducing parasitic effects.

[0045] In wafer probe design, parasitic effects usually refer to unnecessary capacitance and inductance between probes. These parasitic effects can lead to reduced measurement accuracy and signal integrity issues. Offset probe design can reduce these parasitic effects. In the offset probe design, the distance between the probes is usually larger, which can effectively reduce the parasitic capacitance between the probes. The size of the parasitic capacitance is inversely proportional to the distance between the probes. The larger the distance between the probes, the smaller the parasitic capacitance. Reduce parasitic inductance: The layout of the offset probes can reduce the mutual inductance between the probes and reduce parasitic inductance. The reduction of probe mutual inductance helps to improve signal transmission efficiency and reduce signal delay and distortion. Reduce signal interference: The offset layout makes the electric and magnetic field coupling between adjacent probes uneven, which can reduce cross-talk between different signal channels and improve signal integrity.

[0046] The test head 52 includes a fourth contact piece 57 and a fifth contact piece 58 which are spaced apart from each other. The fourth contact piece 57 is located between the third contact piece 56 and the fifth contact piece 58. The fourth contact piece 57 includes a fourth welding portion 571 connected to the cable 53 and a fourth contact portion 573 located at the front end of the fourth welding portion 571. The fifth contact piece 58 includes a fifth welding portion 581 connected to the cable 53 and a fifth contact portion 583 located at the front end of the fifth welding portion 581. The first contact piece 54, the second contact piece 55, the third contact piece 56, the fourth contact piece 57 and the fifth contact piece 58 are respectively configured as a grounding piece (G), a signal piece (S), a grounding piece (G), a signal piece (S), and a grounding piece (G), thereby increasing the contact pieces for signal transmission, and the grounding piece can reduce electromagnetic interference between signal transmissions.

[0047] In the front-to-back direction, the first contact portion 543 , the third contact portion 563 and the fifth contact portion 583 are all located in front of the second contact portion 553 and the fourth contact portion 573 . The staggered arrangement of the signal sheet and the ground sheet can reduce parasitic effects, parasitic inductance and signal interference.

[0048] In the front-to-back direction, the first contact portion 543, the third contact portion 563 and the fifth contact portion 583 are located in the first column, the second contact portion 553 and the fourth contact portion 573 are located in the second column, the first column and the second column are staggered, and the first column is located in front of the second column. The two-column arrangement can reduce parasitic effects, parasitic inductance and signal interference while saving the docking space of the contact piece, thereby taking into account the space utilization rate.

[0049] The orthographic projections of the front end faces 64 of the first contact portion 543, the third contact portion 563 and the fifth contact portion 583 in the width direction overlap, and the orthographic projections of the front end faces 64 of the second contact portion 553 and the fourth contact portion 573 in the width direction overlap. In this way, a greater balance is achieved between space utilization and signal interference reduction.

[0050] The first contact piece 54 includes a first central connecting portion 542 connected between the first welding portion 541 and the first contact portion 543, the second contact piece 55 includes a second central connecting portion 552 connected between the second welding portion 551 and the second contact portion 553, the third contact piece 56 includes a third central connecting portion 562 connected between the third welding portion 561 and the third contact portion 563, the fourth contact piece 57 includes a fourth central connecting portion 572 connected between the fourth welding portion 571 and the fourth contact portion 573, and the fifth contact piece 58 includes a fifth central connecting portion 582 connected between the fifth welding portion 581 and the fifth contact portion 583.

[0051] In the width direction, the width of the first contact portion 543 is smaller than the width of the first middle connecting portion 542, the width of the second contact portion 553 is smaller than the width of the second middle connecting portion 552, the width of the third contact portion 563 is smaller than the width of the third middle connecting portion 562, the width of the fourth contact portion 573 is smaller than the width of the fourth middle connecting portion 572, and the width of the fifth contact portion 583 is smaller than the width of the fifth middle connecting portion 582.

[0052] The first central connecting portion 542 extends inwardly obliquely relative to the first welding portion 541, the second central connecting portion 552 extends inwardly obliquely relative to the second welding portion 551, the fourth central connecting portion 572 extends inwardly obliquely relative to the fourth welding portion 571, the fifth central connecting portion 582 extends inwardly obliquely relative to the fifth welding portion 581, and the third central connecting portion 562 gradually narrows from the third welding portion 561 in a direction approaching the third contact portion 563; the first central connecting portion 542, the second central connecting portion 552, the third central connecting portion 562, the fourth central connecting portion 572, and the fifth central connecting portion 582 are arranged to gather together, thereby improving the stability of each contact piece when docking with the circuit board.

[0053] The front ends of the first central connecting portion 542, the third central connecting portion 562 and the fifth central connecting portion 582 are all located in front of the front ends of the second central connecting portion 552 and the fourth central connecting portion 572. In the width direction, the front ends of the first central connecting portion 542, the third central connecting portion 562 and the fifth central connecting portion 582 are located in the same row, and the front ends of the second central connecting portion 552 and the fourth central connecting portion 572 are located in the same row.

[0054] like Figure 7 As shown, the first contact portion 543, the second contact portion 553, the third contact portion 563, the fourth contact portion 573 and the fifth contact portion 583 each include a top surface 61, a bottom surface 62, an inclined surface 63 connected between the top surface 61 and the bottom surface 62, and a front end surface 64, the inclined surface 63 extends forward and downward from the top surface 61, and the front end surface 64 is perpendicular to the top surface 61 and the bottom surface 62. The provision of the inclined surface 63 improves the elasticity of each contact portion, thereby improving the compatibility of the installation error of the contact portion.

[0055] The extension surfaces of the inclined surfaces 63 of the first contact portion 543, the second contact portion 553, the third contact portion 563, the fourth contact portion 573 and the fifth contact portion 583 are located in the same plane, and the extension surfaces of the front end surfaces 64 of the first contact portion 543, the second contact portion 553, the third contact portion 563, the fourth contact portion 573 and the fifth contact portion 583 are located in the same plane. This facilitates the same stamping process for each contact portion during processing, and reduces the process difficulty.

[0056] The third central connecting portion 562 includes a tower 65 and a frustum 66, wherein the frustum 66 is connected to the front end of the tower 65, wherein the width of the tower 65 at the connection with the third welding portion 561 is greater than the width of the third welding portion 561, and the width of the connection between the frustum 66 and the third contact portion 563 is less than the width of the connection between the frustum 66 and the tower 65. Such provision of the third central connecting portion 562 facilitates the relative closeness of other contact pieces.

[0057] The connector 51 is detachably connected to the housing 10, so that different types of connectors 51 can be easily replaced. The connector 51 is a radio frequency (RF) connector, so that different radio frequency (RF) connectors can be easily replaced to meet different application needs. The connector 51 includes an external thread (not numbered), and the housing 10 includes an internal thread (not numbered). The connector 51 and the housing 10 are detachably connected through the external thread and the internal thread.

[0058] The shell 10 includes a first shell 15 and a second shell 16, and the first shell 15 and the second shell 16 are detachably connected together. The semiconductor test RF probe 50 also includes a plurality of bolts 17, the first shell 15 includes a first connecting hole 151, and the second shell 16 includes a second connecting hole 161. The bolts 17 are inserted into the first connecting hole 151 and the second connecting hole 161, and the bolts 17 detachably connect the first shell 15 and the second shell 16 together. The first shell 15 is provided with a first through hole 155, and the second shell 16 is provided with a second through hole 165. The first through hole 155 and the second through hole 165 are arranged correspondingly, and the cable 53 passes through the first through hole 155 and the second through hole 165. The present invention adopts a first shell 15 and a second shell 16 of a split structure, which are detachable by bolts 17. Different types of shells 10 can be installed according to different needs, and the applicable scenarios are wide.

[0059] The first shell 15 includes the front wall surface 13 and the lower wall surface 12, and the second shell 16 includes the upper wall surface 11 and the rear wall surface 14. The first shell 15 includes a first contact surface 152 in contact with the second shell 16, and the second shell 16 body 10 includes a second contact surface 162 in contact with the first shell 15. The first contact surface 152 and the second contact surface 162 are both planar, so that installation can be achieved by directly docking, and relative to two inclined planes, the processing technology is simpler and the manufacturing cost is lower.

[0060] The upper wall 11 includes a first wall 111 and a second wall 112 . The second wall 112 extends obliquely forward and upward from the first wall 111 . The connector 51 is mounted on the inclined second wall 112 to facilitate assembly of the connector 51 .

[0061] Compared with the prior art, the first shell 15 and the second shell 16 of the split structure are detachable by bolts 17, and different types of shells 10 can be installed according to different needs, and the application scenarios are wide. The connector 51 is detachably connected to the shell 10, so that different types of connectors 51 can be easily replaced. The connector 51 is a radio frequency RF connector, so that different radio frequency RF connectors can be easily replaced to meet different application needs.

[0062] The present invention is not limited to the above-mentioned specific implementation modes. Various changes made by ordinary technicians in this field based on the above-mentioned concepts without creative work are all within the protection scope of the present invention.

Claims

1. A semiconductor test radio frequency probe, characterized in that: include: A shell, the shell comprising an upper wall, a lower wall, a front wall and a rear wall, the front wall and the rear wall are respectively located on both sides of the shell in the front-to-back direction, and the upper wall and the lower wall are respectively located on both sides of the shell in the up-down direction; as well as A probe, the probe comprising a connector, a test head and a cable, the cable being at least partially connected between the connector and the test head, the connector comprising a first connection portion and a second connection portion, the first connection portion being located inside the shell, the second connection portion being located outside the shell, and the second connection portion being located on the upper wall surface, the cable passing through the front wall surface from the inside of the shell, and the test head being connected to the front end portion of the cable; The test head comprises a first contact piece, a second contact piece and a third contact piece which are spaced apart from each other, the second contact piece is located between the first contact piece and the third contact piece, the first contact piece comprises a first welding portion connected to the cable and a first contact portion located at a front end of the first welding portion, the second contact piece comprises a second welding portion connected to the cable and a second contact portion located at a front end of the second welding portion, and the third contact piece comprises a third welding portion connected to the cable and a third contact portion located at a front end of the third welding portion; In a width direction perpendicular to the front-to-back direction, front end surfaces of the first contact portion, the second contact portion and the third contact portion are arranged alternately.

2. The semiconductor test radio frequency probe as claimed in claim 1, characterized in that: The test head comprises a fourth contact piece and a fifth contact piece which are spaced apart from each other, the fourth contact piece is located between the third contact piece and the fifth contact piece, the fourth contact piece comprises a fourth welding portion connected to the cable and a fourth contact portion located at the front end of the fourth welding portion, and the fifth contact piece comprises a fifth welding portion connected to the cable and a fifth contact portion located at the front end of the fifth welding portion; In the front-to-back direction, the first contact portion, the third contact portion and the fifth contact portion are all located in front of the second contact portion and the fourth contact portion.

3. The semiconductor test radio frequency probe as claimed in claim 2, characterized in that: In the front-to-back direction, the first contact portion, the third contact portion and the fifth contact portion are located in a first column, the second contact portion and the fourth contact portion are located in a second column, the first column and the second column are staggered, and the first column is located in front of the second column.

4. The semiconductor test radio frequency probe as claimed in claim 3, characterized in that: The orthographic projections of the front end surfaces of the first contact portion, the third contact portion, and the fifth contact portion in the width direction coincide with each other, and the orthographic projections of the front end surfaces of the second contact portion and the fourth contact portion in the width direction coincide with each other.

5. The semiconductor test radio frequency probe as claimed in claim 4, characterized in that: The first contact piece includes a first middle connecting portion connected between the first welding portion and the first contact portion, the second contact piece includes a second middle connecting portion connected between the second welding portion and the second contact portion, the third contact piece includes a third middle connecting portion connected between the third welding portion and the third contact portion, the fourth contact piece includes a fourth middle connecting portion connected between the fourth welding portion and the fourth contact portion, and the fifth contact piece includes a fifth middle connecting portion connected between the fifth welding portion and the fifth contact portion; In the width direction, the width of the first contact portion is smaller than the width of the first middle connecting portion, the width of the second contact portion is smaller than the width of the second middle connecting portion, the width of the third contact portion is smaller than the width of the third middle connecting portion, the width of the fourth contact portion is smaller than the width of the fourth middle connecting portion, and the width of the fifth contact portion is smaller than the width of the fifth middle connecting portion; The first central connecting portion extends inwardly obliquely relative to the first welding portion, the second central connecting portion extends inwardly obliquely relative to the second welding portion, the fourth central connecting portion extends inwardly obliquely relative to the fourth welding portion, the fifth central connecting portion extends inwardly obliquely relative to the fifth welding portion, and the third central connecting portion gradually narrows from the third welding portion in a direction approaching the third contact portion; the first central connecting portion, the second central connecting portion, the third central connecting portion, the fourth central connecting portion, and the fifth central connecting portion are arranged to be gathered together.

6. The semiconductor test radio frequency probe as claimed in claim 5, characterized in that: The front ends of the first central connecting part, the third central connecting part and the fifth central connecting part are all located in front of the front ends of the second central connecting part and the fourth central connecting part; In the width direction, the front ends of the first central connecting portion, the third central connecting portion and the fifth central connecting portion are located in the same row, and the front ends of the second central connecting portion and the fourth central connecting portion are located in the same row.

7. The semiconductor test radio frequency probe as claimed in claim 6, characterized in that: The first contact portion, the second contact portion, the third contact portion, the fourth contact portion and the fifth contact portion each include a top surface, a bottom surface, an inclined surface and a front end surface connected between the top surface and the bottom surface, the inclined surface extends forward and downward from the top surface, and the front end surface is perpendicular to the top surface and the bottom surface; The extension surfaces of the inclined surfaces of the first, second, third, fourth and fifth contact parts are located in the same plane, and the extension surfaces of the front end surfaces of the first, second, third, fourth and fifth contact parts are located in the same plane.

8. The semiconductor test radio frequency probe as claimed in claim 7, characterized in that: The third central connecting part includes a tower and a frustum, the frustum is connected to the front end of the tower, the width of the tower at the connection with the third welding part is greater than the width of the third welding part, and the width of the connection between the frustum and the third contact part is less than the width of the connection between the frustum and the tower.

9. The semiconductor test radio frequency probe as claimed in claim 8, characterized in that: The first contact piece, the second contact piece, the third contact piece, the fourth contact piece and the fifth contact piece are respectively configured as a grounding piece, a signal piece, a grounding piece, a signal piece and a grounding piece.

10. The semiconductor test radio frequency probe as claimed in claim 8, characterized in that: The connector includes an external thread, the housing includes an internal thread, and the connector and the housing are detachably connected via the external thread and the internal thread; The housing includes a first housing and a second housing, and the first housing and the second housing are detachably connected together.

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