Dynamic modeling method and device for sandwich type piezoelectric ultrasonic transducer, electronic equipment, storage medium and program product

Abstract

The embodiment of the invention discloses a dynamic modeling method and device for a sandwich type piezoelectric ultrasonic transducer, electronic equipment, a storage medium and a program product, and the method comprises the steps: determining an electromechanical impedance matrix of a relation between generalized stress and generalized displacement of a piezoelectric layer according to a dynamic equation of a piezoelectric material applied in the piezoelectric layer; determining a backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer according to the kinetic equation of the elastic material applied in the backing layer, and determining a matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer according to the kinetic equation of the elastic material applied in the matching layer; assembling the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix to obtain a global electromechanical impedance matrix of the sandwich type piezoelectric ultrasonic transducer; and obtaining a dynamic response result of the sandwich type piezoelectric ultrasonic transducer according to the global electromechanical impedance matrix. According to the technical scheme of the embodiment of the invention, both efficiency and precision can be considered.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of mechanical dynamics technology, and in particular to a dynamics modeling method, device, electronic device, storage medium and program product for a sandwich piezoelectric ultrasonic transducer. Background Art

[0002] Piezoelectric ultrasonic transducers are important tools for ultrasonic detection and imaging technology. They are widely used in biomedical ultrasonic diagnosis and treatment, industrial non-destructive testing, structural health monitoring, and ultrasonic-assisted processing.

[0003] Piezoelectric ultrasonic transducers are usually a sandwich structure, including a piezoelectric layer, a matching layer and a backing layer. However, the introduction of this sandwich structure increases the complexity of the structural design and optimization of the piezoelectric ultrasonic transducer, which makes it particularly important to perform dynamic modeling on the sandwich piezoelectric ultrasonic transducer, so as to analyze the influence of factors such as materials and geometric shapes on the dynamic characteristics of the sandwich piezoelectric ultrasonic transducer based on the modeling results, thereby assisting the structural design and optimization of the sandwich piezoelectric ultrasonic transducer.

[0004] However, the current dynamic modeling scheme used for sandwich piezoelectric ultrasonic transducers has the problem of not being able to balance modeling efficiency and modeling accuracy, which directly affects the rapid and accurate analysis of the dynamic characteristics of the sandwich piezoelectric ultrasonic transducer and needs to be urgently resolved. Summary of the invention

[0005] The embodiments of the present invention provide a method, device, electronic device, storage medium and program product for dynamic modeling of a sandwich piezoelectric ultrasonic transducer, so as to achieve a balance between modeling efficiency and modeling accuracy.

[0006] According to one aspect of the present invention, a dynamic modeling method for a sandwich piezoelectric ultrasonic transducer is provided, wherein the sandwich piezoelectric ultrasonic transducer comprises a piezoelectric layer, a matching layer and a backing layer, and the method comprises:

[0007] According to the dynamic equation of the piezoelectric material used in the piezoelectric layer, the electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer is determined;

[0008] Determining a backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer according to the dynamic equations of the elastic material applied in the backing layer;

[0009] According to the dynamic equation of the elastic material used in the matching layer, a matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer is determined;

[0010] The electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix are assembled to obtain the global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer;

[0011] According to the global electromechanical impedance matrix, the dynamic response results of the sandwich piezoelectric ultrasonic transducer are obtained.

[0012] According to another aspect of the present invention, there is provided a dynamic modeling device for a sandwich piezoelectric ultrasonic transducer, the sandwich piezoelectric ultrasonic transducer comprising a piezoelectric layer, a matching layer and a backing layer, the device comprising:

[0013] An electromechanical impedance matrix determination module is used to determine the electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer according to the dynamic equation of the piezoelectric material applied in the piezoelectric layer;

[0014] A backing stiffness matrix determination module for determining a backing stiffness matrix of a relationship between generalized stress and generalized displacement of the backing layer according to a dynamic equation of an elastic material applied in the backing layer;

[0015] A matching stiffness matrix determination module is used to determine a matching stiffness matrix of a relationship between generalized stress and generalized displacement of a matching layer according to a dynamic equation of an elastic material applied in the matching layer;

[0016] A global electromechanical impedance matrix obtaining module is used to assemble the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix to obtain the global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer;

[0017] The dynamic response result obtaining module is used to obtain the dynamic response result of the sandwich piezoelectric ultrasonic transducer according to the global electromechanical impedance matrix.

[0018] According to another aspect of the present invention, there is provided an electronic device, which may include:

[0019] at least one processor; and

[0020] a memory communicatively connected to at least one processor; wherein,

[0021] The memory stores a computer program that can be executed by at least one processor, and the computer program is executed by at least one processor so that the at least one processor implements the dynamic modeling method for the sandwich piezoelectric ultrasonic transducer provided by any embodiment of the present invention when executing the computer program.

[0022] According to another aspect of the present invention, a computer-readable storage medium is provided, on which computer instructions are stored, and the computer instructions are used to enable a processor to implement the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided by any embodiment of the present invention when executed.

[0023] According to another aspect of the present invention, a computer program product is provided, on which a computer program is stored. When the computer program is executed by a processor, the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided by any embodiment of the present invention is implemented.

[0024] The technical solution of the embodiment of the present invention can determine the electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer through the dynamic equation of the piezoelectric material used in the piezoelectric layer, the backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer through the dynamic equation of the elastic material used in the backing layer, and the matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer through the dynamic equation of the elastic material used in the matching layer; then, the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix are assembled to obtain the global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer; thus, the dynamic response result of the sandwich piezoelectric ultrasonic transducer can be obtained according to the global electromechanical impedance matrix. The above technical solution realizes the rapid and accurate dynamic modeling of the sandwich piezoelectric ultrasonic transducer by determining the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix.

[0025] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1a It is a schematic diagram of a three-dimensional structure and a coordinate system of a sandwich piezoelectric ultrasonic transducer in various dynamic modeling methods for a sandwich piezoelectric ultrasonic transducer provided according to an embodiment of the present invention;

[0028] Figure 1b It is a schematic diagram of the two-dimensional axisymmetric structure and geometric dimensions of a sandwich piezoelectric ultrasonic transducer in various dynamic modeling methods for a sandwich piezoelectric ultrasonic transducer provided according to an embodiment of the present invention;

[0029] Figure 2 is a flow chart of a dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided in an embodiment of the present invention;

[0030] Figure 3is a flow chart of another dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided in an embodiment of the present invention;

[0031] Figure 4 is a schematic diagram of a dynamic response curve of electromechanical impedance in another dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided according to an embodiment of the present invention;

[0032] Figure 5 is a schematic diagram of a displacement response curve in another dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided according to an embodiment of the present invention;

[0033] Figure 6 is a structural block diagram of a dynamic modeling device for a sandwich piezoelectric ultrasonic transducer provided according to an embodiment of the present invention;

[0034] Figure 7 It is a structural schematic diagram of an electronic device for implementing the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer according to an embodiment of the present invention. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0036] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. The situations of "target", "original", etc. are similar and will not be repeated here. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0037] Before introducing the embodiment of the present invention, the application scenario of the embodiment of the present invention is first described by way of example. For example, a sandwich piezoelectric ultrasonic transducer composed of a PZ27 circular piezoelectric ceramic (i.e., a piezoelectric layer PL), an Eccosorb MF114 matching layer ML, and an HCP70 backing layer BL is used as the research object, and its geometric shape and coordinate system are defined as follows: Figure 1a shown. Figure 1a In the figure, the blue part represents the backing layer BL, the gray part represents the piezoelectric layer PL, the green part represents the matching layer ML, and the yellow part represents the electrode E1 and the electrode E2.

[0038] On this basis, further, since the sandwich piezoelectric ultrasonic transducer has an axisymmetric feature and the electrode thickness is negligible, it can be simplified into a two-dimensional axisymmetric model. The geometric dimensions and coordinate system of each part in the two-dimensional axisymmetric model are defined as follows: Figure 1b As shown, the red dotted line indicates the rotational symmetry axis. The diameter of the piezoelectric layer PL is set to 2a = 25 mm, the thickness is 2c = 4 mm, and the density ρ is 7700 kg / m 3 , and the other material parameters are shown in Table 1. The diameter of the matching layer ML is 2a=25 mm, and the thickness is 2b=1 mm. The diameter of the backing layer BL is 2a=25 mm, and the thickness is 2d=27 mm. The other material parameters of the matching layer ML and the backing layer BL are shown in Table 2.

[0039] Table 1 Material parameters of the piezoelectric layer PL

[0040]

[0041] in, is the elastic constant, with the unit of (10 10 N / m 2 );e ij is the piezoelectric constant, unit is (C / m 2 ); is the dielectric constant, in units of (10 -9 F / m).

[0042] Table 2 Material parameters of matching layer ML and backing layer BL

[0043]

[0044] Among them, c L is the longitudinal wave velocity, c S is the shear wave velocity, in m / s; Q m is the loss coefficient, in %; ρ is the density, in kg / m 3 .

[0045] in addition, Figure 1b Also shown are seven boundaries of the sandwich piezoelectric ultrasonic transducer, which may include a backing thickness outer boundary 1 of the backing layer in the thickness direction z, a backing radial outer boundary 2 of the backing layer in the radial direction r, a first connection boundary 3 between the backing layer and the piezoelectric layer in the thickness direction z, a piezoelectric radial outer boundary 4 between the piezoelectric layer in the radial direction r, a second connection boundary 5 between the piezoelectric layer and the matching layer in the thickness direction z, a matching radial outer boundary of the matching layer in the radial direction r, and a matching thickness outer boundary 7 of the matching layer in the thickness direction z.

[0046] Next, the kinetic modeling scheme described in each embodiment of the present invention will be described in detail.

[0047] Figure 2 It is a flow chart of a method for dynamic modeling of a sandwich piezoelectric ultrasonic transducer provided by an embodiment of the present invention. This embodiment can be applicable to the case of dynamic modeling of a sandwich piezoelectric ultrasonic transducer, which includes a piezoelectric layer, a matching layer and a backing layer. The method can be executed by a dynamic modeling device for a sandwich piezoelectric ultrasonic transducer provided by an embodiment of the present invention, which can be implemented by software and / or hardware, and the device can be integrated on an electronic device, which can be various user terminals or servers.

[0048] See also Figure 2 The method of the embodiment of the present invention specifically includes the following steps:

[0049] S110. Determine an electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer according to a dynamic equation of the piezoelectric material used in the piezoelectric layer.

[0050] Among them, the generalized stress T of the piezoelectric layer is derived according to the dynamic equation of the piezoelectric material used in the piezoelectric layer. p With the generalized displacement u p The electromechanical impedance matrix Z p (ω):

[0051] T p =Z p (ω)u p ;

[0052] Where ω is the angular frequency.

[0053] On this basis, combined with the application scenarios that may be involved in the embodiments of the present invention, optionally, the electromechanical impedance matrix Z can be determined in the following manner: p (ω):

[0054] According to the dynamic equation of the piezoelectric material used in the piezoelectric layer, the stress vector T3 along the first connection boundary 3, the stress vector T4 along the piezoelectric radial outer boundary 4, and the stress vector T5 along the second connection boundary 5 are determined respectively; according to the dynamic equation of the piezoelectric material used in the piezoelectric layer, the displacement vector u3 along the first connection boundary 3, the displacement vector u4 along the piezoelectric radial outer boundary 4, and the displacement vector u5 along the second connection boundary 5 are determined respectively; according to all the determined stress vectors and all the displacement vectors, the generalized stress T of the piezoelectric layer is determined. p With the generalized displacement u p The electromechanical impedance matrix Z p (ω).

[0055] T p =[T3 T4 T5] T ;

[0056] u p =[u3 u4 u5] T ;

[0057] in, T4=[T r | r＝a T rz | r＝a D r | r＝a ], T z is the normal stress, T rz is the shear stress, is the electric potential, D r is the electric displacement in the radial direction (i.e., r direction); u3=[w| z＝c u| z＝c D z | z＝c ],u4=[u| r＝a w| r＝a φ| r＝a ],u5=[w| z＝-c u| z＝-c D z | z＝-c ], u is the displacement along the coordinate r direction, w is the displacement along the thickness direction (i.e. z direction), D z is the electric displacement in the z direction.

[0058] S120. Determine a backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer according to a dynamic equation of the elastic material used in the backing layer.

[0059] Among them, the generalized stress T of the backing layer is derived according to the dynamic equation of the elastic material used in the backing layer. bWith the generalized displacement u b The stiffness matrix K of the relationship between b (ω):

[0060] T b =K b (ω)u b ;

[0061] In order to match the stiffness matrix K of the following matching layer m (ω) is distinguished, where the stiffness matrix K b (ω) is called the backing stiffness matrix K b (ω), similarly, the stiffness matrix K m (ω) is called the matching stiffness matrix K m (ω).

[0062] On this basis, combined with the application scenarios that may be involved in the embodiments of the present invention, optionally, the backing stiffness matrix K can be determined by the following method: b (ω):

[0063] According to the dynamic equation of the elastic material used in the backing layer, the stress vector T1 along the outer boundary 1 of the backing thickness, the stress vector T2 along the outer boundary 2 of the backing radial direction, and the stress vector T3 along the first connecting boundary 3 are determined respectively; according to the dynamic equation of the elastic material used in the backing layer, the displacement vector u1 along the outer boundary 1 of the backing thickness, the displacement vector u2 along the outer boundary 2 of the backing radial direction, and the displacement vector u3 along the first connecting boundary 3 are determined respectively; according to all the determined stress vectors and all the displacement vectors, the generalized stress T b With the generalized displacement u b The stiffness matrix K of the relationship between b (ω).

[0064] T b =[T1 T2 T3] T ;

[0065] u b =[u1 u2 u3] T ;

[0066] Where, T1=[T z | z＝d T rz | z＝d ],T2=[T r | r＝a T rz | r＝a ],T3=[T z | z＝-d T rz | z＝-d ],u1=[w|z＝d u| z＝d ],u2=[u| r＝a w| r＝a ],u3=[w| z＝-d u| z＝-d ].

[0067] S130. Determine a matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer according to a dynamic equation of the elastic material used in the matching layer.

[0068] Among them, the generalized stress T of the matching layer is derived according to the dynamic equation of the elastic material used in the matching layer. m With the generalized displacement u m The matching stiffness matrix K between m (ω):

[0069] T m =K m (ω)u m .

[0070] On this basis, combined with the application scenarios that may be involved in the embodiments of the present invention, optionally, the matching stiffness matrix K can be determined in the following manner: m (ω):

[0071] According to the dynamic equation of the elastic material used in the matching layer, the stress vector T5 along the second connection boundary 5, the stress vector T6 along the matching radial outer boundary 6, and the stress vector T7 along the matching thickness outer boundary 7 are determined respectively; according to the dynamic equation of the elastic material used in the matching layer, the displacement vector u5 along the second connection boundary 5, the displacement vector u5 along the matching radial outer boundary 6, and the displacement vector u7 along the matching thickness outer boundary 7 are determined respectively; according to all the determined stress vectors and all the displacement vectors, the generalized stress T of the matching layer is determined. m With the generalized displacement u m The matching stiffness matrix K between m (ω).

[0072] T m =[T5 T6 T7] T ;

[0073] u m =[u5 u6 u7] T ;

[0074] Where, T5 = [T z | z＝b T rz | z＝b ],T6=[T r | r＝a Trz | r＝a ],T7=[T z | z＝-b T rz | z＝-b ],u5=[w| z＝b u| z＝b ],u6=[u| r＝a w| r＝a ],u7=[w| z＝-b u| z＝-b ].

[0075] S140, assembling the electromechanical impedance matrix, the backing stiffness matrix, and the matching stiffness matrix to obtain the global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer.

[0076] As described above, the sandwich piezoelectric ultrasonic transducer includes a backing layer, a piezoelectric layer and a matching layer. Specifically, the backing layer can absorb the echo from the back, which reduces the sensitivity of the sandwich piezoelectric ultrasonic transducer but increases the bandwidth; the piezoelectric layer generates elastic waves of high-frequency vibration; the matching layer increases the energy transmitted into the front liquid, which not only increases the sensitivity but also increases the bandwidth.

[0077] Therefore, according to the sandwich combination mode of the sandwich piezoelectric ultrasonic transducer, the electromechanical impedance matrix Z p (ω), backing stiffness matrix K b (ω) and the matching stiffness matrix K m (ω) is assembled to obtain the global electromechanical impedance matrix Z(ω) of the sandwich piezoelectric ultrasonic transducer:

[0078] T = Z(ω)u;

[0079] Z(ω)=f(K b (ω),Z p (ω),K m (ω));

[0080] Where f represents a general function; T represents the generalized stress at each boundary, T = [T1 T2 T3 T4 T5 T6 T7] T ; u represents the generalized displacement at each boundary, u=[u1 u2 u3 u4 u5 u6 u7] T .

[0081] On this basis, combined with the above example, optionally, the global electromechanical impedance matrix Z(ω) can be expressed by the following matrix equation:

[0082]

[0083] S150. Obtain the dynamic response result of the sandwich piezoelectric ultrasonic transducer according to the global electromechanical impedance matrix.

[0084] Among them, according to the global electromechanical impedance matrix Z(ω), the dynamic response result of the sandwich piezoelectric ultrasonic transducer can be obtained. Exemplarily, the dynamic response result can be obtained according to the global electromechanical impedance matrix Z(ω) and by applying boundary conditions. The boundary conditions can be conditions related to at least part of the boundaries of all the boundaries of the sandwich piezoelectric ultrasonic transducer. The dynamic response result can be, for example, an electromechanical impedance dynamic response curve and / or a displacement response curve, etc., which is related to the actual situation and is not specifically limited here.

[0085] On this basis, combined with the application scenarios that may be involved in the embodiments of the present invention, optionally, the dynamic response of u can be obtained by applying the boundary conditions of T. Similarly, the dynamic response of T can also be obtained by applying the boundary conditions of u. The calculation method is as follows:

[0086] u=[Z(ω)] -1 T;

[0087] T = Z(ω)u;

[0088] The superscript -1 indicates the inverse matrix.

[0089] The technical solution of the embodiment of the present invention can determine the electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer through the dynamic equation of the piezoelectric material used in the piezoelectric layer, the backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer through the dynamic equation of the elastic material used in the backing layer, and the matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer through the dynamic equation of the elastic material used in the matching layer; then, the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix are assembled to obtain the global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer; thus, the dynamic response result of the sandwich piezoelectric ultrasonic transducer can be obtained according to the global electromechanical impedance matrix. The above technical solution realizes the rapid and accurate dynamic modeling of the sandwich piezoelectric ultrasonic transducer by determining the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix.

[0090] Figure 3It is a flowchart of another dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided in an embodiment of the present invention. This embodiment is optimized based on the above-mentioned technical solutions. In this embodiment, optionally, the dynamic response result includes an electromechanical impedance dynamic response curve, and the dynamic response result of the sandwich piezoelectric ultrasonic transducer is obtained according to the global electromechanical impedance matrix, including: for the first connection boundary between the backing layer and the piezoelectric layer in the thickness direction, according to the global electromechanical impedance matrix, the electric displacement at the first connection boundary is obtained; according to the electric displacement and the preset angular frequency range, the current flowing through the sandwich piezoelectric ultrasonic transducer within the preset angular frequency range is obtained; according to the potential of the two electrodes corresponding to the piezoelectric layer and the preset angular frequency range, the potential difference of the electrode surfaces of the two electrodes is obtained; according to the current and the potential difference, the electromechanical impedance dynamic response curve of the sandwich piezoelectric ultrasonic transducer is obtained. Among them, the explanations of the terms that are the same or corresponding to the above-mentioned embodiments are not repeated here.

[0091] See also Figure 3 The method of this embodiment may specifically include the following steps:

[0092] S210. Determine an electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer according to a dynamic equation of the piezoelectric material used in the piezoelectric layer.

[0093] S220. Determine a backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer according to a dynamic equation of the elastic material used in the backing layer.

[0094] S230. Determine a matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer according to a dynamic equation of the elastic material used in the matching layer.

[0095] S240, assembling the electromechanical impedance matrix, the backing stiffness matrix, and the matching stiffness matrix to obtain the global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer.

[0096] S250 , for a first connection boundary between the backing layer and the piezoelectric layer in the thickness direction, obtain an electric displacement at the first connection boundary according to the global electromechanical impedance matrix.

[0097] According to the global electromechanical impedance matrix, the electric displacement D at the first connection boundary 3 is obtained: z | z＝c , specifically u3=[w| z＝c u| z＝c D z | z＝c D in ] z | z＝c The solution.

[0098] On this basis, combined with the application scenarios that may be involved in the embodiments of the present invention, optionally, see Figure 1a , when free vibration is only applied with alternating current AC, the potential variables in T3 and T5 are in, is the potential of the electrode E1 located above the piezoelectric layer PL, is the potential of the electrode E2 located below the piezoelectric layer PL, and all other stress variables are 0. Substituting into the matrix equation in S140, the electric displacement variable D is obtained. z | z＝c The solution (i.e., electric displacement) is

[0099] S260. Obtain, according to the electric displacement and the preset angular frequency range, a current flowing through the sandwich piezoelectric ultrasonic transducer within the preset angular frequency range.

[0100] The preset angular frequency range can be understood as the range of the preset angular frequency ω for which the dynamic response analysis is required. z | z＝c and a preset angular frequency range, the current I flowing through the sandwich piezoelectric ultrasonic transducer within the preset angular frequency range can be obtained.

[0101] On this basis, combined with possible application scenarios of the present invention, optionally, the current I can be determined by the following formula:

[0102]

[0103] Where Q is the charge, represents the charge Q on the z=c surface (i.e., the first connection boundary 3) | z＝c Differentiate the time t and find the current I flowing through the sandwich piezoelectric ultrasonic transducer in the range of 0-1000kHz.

[0104] S270, obtaining a potential difference between electrode surfaces of the two electrodes according to the potentials of the two electrodes corresponding to the piezoelectric layer and a preset angular frequency range.

[0105] Among them, see Figure 1a According to the potential of the electrode E1 and the potential of the electrode E2 corresponding to the piezoelectric layer, and the preset angular frequency range, the potential difference V between the electrode surfaces of the two electrodes can be obtained.

[0106] On this basis, combined with possible application scenarios of the present invention, optionally, the potential difference V can be determined in the following manner:

[0107]

[0108] S280. Obtain an electromechanical impedance dynamic response curve of the sandwich piezoelectric ultrasonic transducer according to the current and the potential difference.

[0109] in, That is, the electromechanical impedance Z is determined according to the current I and the potential difference V. Therefore, according to the current I and the potential difference V, the electromechanical impedance dynamic response curve of the sandwich piezoelectric ultrasonic transducer can be obtained.

[0110] It should be noted that the current dynamic modeling is mainly based on the three-dimensional finite element method. Although this method can be used to analyze any complex structure, it is limited by the results of meshing. The modeling efficiency and modeling accuracy constrain each other, and it is difficult to apply to the parameter analysis and structural optimization of sandwich piezoelectric ultrasonic transducers.

[0111] In this regard, in order to prove that the dynamic modeling method proposed in the embodiment of the present invention (or this example) can take into account both modeling efficiency and modeling accuracy, the sandwich piezoelectric ultrasonic transducer given in the above example is dynamically modeled at 0-1000kHz using the three-dimensional finite element method and this example, and it can be obtained that Figure 4 The two electromechanical impedance dynamic response curves are shown. By comparing the two electromechanical impedance dynamic response curves, it can be found that the correlation coefficient reaches 99.9%, which proves that the dynamic modeling method proposed in this example has high modeling accuracy; moreover, the modeling time is shortened from 21.5 minutes of the three-dimensional finite element method to 20 seconds of this example, which proves that the dynamic modeling method proposed in this example has high modeling efficiency.

[0112] The technical solution of the embodiment of the present invention obtains the electric displacement at the first connection boundary through the global electromechanical impedance matrix. The electric displacement can be used to obtain the current flowing through the sandwich piezoelectric ultrasonic transducer within a preset angular frequency range, as well as the potential difference between the electrode surfaces of the two electrodes through the potential of the upper and lower electrodes of the piezoelectric layer and the preset angular frequency range. Therefore, based on the current and the potential difference, the electromechanical impedance dynamic response curve of the sandwich piezoelectric ultrasonic transducer is quickly and accurately obtained.

[0113] An optional technical solution, the above kinetic modeling method further includes:

[0114] Determine the angular frequency of the electromechanical impedance dynamic response curve at the peak;

[0115] For the outer boundary of the matching thickness of the matching layer in the thickness direction, a displacement response curve at the outer boundary of the matching thickness under the angular frequency is obtained according to the angular frequency and the global electromechanical impedance matrix.

[0116] The peak value can be understood as the position where the electromechanical impedance takes the extreme value in the electromechanical impedance dynamic response curve, which is the position where the sandwich piezoelectric ultrasonic transducer vibrates at a high frequency and has important analytical significance. Therefore, the angular frequency of the electromechanical impedance dynamic response curve at the peak value can be determined, and then the displacement response curve at the outer boundary 7 of the matching thickness at the angular frequency can be obtained based on the angular frequency and the global electromechanical impedance matrix.

[0117] For example, Figure 4 The angular frequency at one of the peaks in the given example is 76kHz, so in this example at 76kHz, the displacement w| of the surface of the outer boundary 7 of the matching thickness is obtained. z＝-b Response curve. See Figure 5 , comparing the displacement w| obtained using the three-dimensional finite element method and this example. z＝-b It can be seen from the response curve that the dynamic modeling method proposed in this example has high modeling accuracy.

[0118] From the above description, it can be seen that compared with the three-dimensional finite element method, the dynamic modeling method proposed in this example has at least the following advantages:

[0119] 1) There are no simplified assumptions, and both thickness vibration mode and radial vibration mode are considered, which is consistent with the description of the real vibration state of the piezoelectric layer, matching layer and backing layer, and can show the coupling effect between different vibration modes;

[0120] 2) Applicable to solving the dynamic response of sandwich ultrasonic transducers of any size and any boundary conditions;

[0121] 3) Simple, fast and accurate.

[0122] Figure 6 This is a structural block diagram of a dynamic modeling device for a sandwich piezoelectric ultrasonic transducer provided in an embodiment of the present invention. The device is used to execute the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided in any of the above embodiments. The device and the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer in the above embodiments belong to the same inventive concept. For details not described in detail in the embodiment of the dynamic modeling device for a sandwich piezoelectric ultrasonic transducer, reference can be made to the above embodiment of the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer. See Figure 6 The sandwich piezoelectric ultrasonic transducer includes a piezoelectric layer, a matching layer and a backing layer. The device may specifically include: an electromechanical impedance matrix determination module 310, a backing stiffness matrix determination module 320, a matching stiffness matrix determination module 330, a global electromechanical impedance matrix acquisition module 340 and a dynamic response result acquisition module 350.

[0123] The electromechanical impedance matrix determination module 310 is used to determine the electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer according to the dynamic equation of the piezoelectric material used in the piezoelectric layer;

[0124] A backing stiffness matrix determination module 320, for determining a backing stiffness matrix of a relationship between generalized stress and generalized displacement of the backing layer according to a dynamic equation of an elastic material applied in the backing layer;

[0125] A matching stiffness matrix determination module 330 is used to determine a matching stiffness matrix of a relationship between generalized stress and generalized displacement of a matching layer according to a dynamic equation of an elastic material applied in the matching layer;

[0126] A global electromechanical impedance matrix obtaining module 340 is used to assemble the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix to obtain a global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer;

[0127] The dynamic response result obtaining module 350 is used to obtain the dynamic response result of the sandwich piezoelectric ultrasonic transducer according to the global electromechanical impedance matrix.

[0128] Optionally, for a first connection boundary between the backing layer and the piezoelectric layer in the thickness direction, a piezoelectric radial outer boundary of the piezoelectric layer in the radial direction, and a second connection boundary between the piezoelectric layer and the matching layer in the thickness direction, the electromechanical impedance matrix determination module 310 is specifically used to:

[0129] According to the dynamic equation of the piezoelectric material used in the piezoelectric layer, the stress vectors along the first connection boundary, along the piezoelectric radial outer boundary and along the second connection boundary are determined respectively;

[0130] According to the dynamic equation of the piezoelectric material used in the piezoelectric layer, the displacement vectors along the first connection boundary, along the outer boundary of the piezoelectric radial direction and along the second connection boundary are determined respectively;

[0131] According to the determined total stress vectors and total displacement vectors, an electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer is determined.

[0132] Optionally, for the backing thickness outer boundary of the backing layer in the thickness direction, the backing radial outer boundary of the backing layer in the radial direction, and the first connection boundary between the backing layer and the piezoelectric layer in the thickness direction, the backing stiffness matrix determination module 320 is specifically used to:

[0133] According to the dynamic equation of the elastic material used in the backing layer, the stress vectors along the outer boundary of the backing thickness, along the outer boundary of the backing radial direction and along the first connection boundary are determined respectively;

[0134] According to the dynamic equation of the elastic material used in the backing layer, the displacement vectors along the outer boundary of the backing thickness, along the outer boundary of the backing radial direction and along the first connection boundary are determined respectively;

[0135] According to the determined total stress vectors and total displacement vectors, a backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer is determined.

[0136] Optionally, for the second connection boundary between the piezoelectric layer and the matching layer in the thickness direction, the matching radial outer boundary of the matching layer in the radial direction, and the matching thickness outer boundary of the matching layer in the thickness direction, the matching stiffness matrix determination module 330 is specifically used to:

[0137] According to the dynamic equation of the elastic material used in the matching layer, the stress vectors along the second connection boundary, along the matching radial outer boundary and along the matching thickness outer boundary are determined respectively;

[0138] According to the dynamic equation of the elastic material used in the matching layer, the displacement vectors along the second connection boundary, along the matching radial outer boundary and along the matching thickness outer boundary are determined respectively;

[0139] According to the determined total stress vectors and total displacement vectors, a matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer is determined.

[0140] Optionally, the dynamic response result includes an electromechanical impedance dynamic response curve, and the dynamic response result obtaining module 350 may include:

[0141] An electric displacement obtaining unit is used to obtain an electric displacement at a first connection boundary between the backing layer and the piezoelectric layer in the thickness direction according to a global electromechanical impedance matrix;

[0142] A current obtaining unit, used for obtaining a current flowing through the sandwich piezoelectric ultrasonic transducer within a preset angular frequency range according to the electric displacement and the preset angular frequency range;

[0143] A potential difference obtaining unit, used for obtaining a potential difference between electrode surfaces of the two electrodes according to the potentials of the two electrodes corresponding to the piezoelectric layer and a preset angular frequency range;

[0144] The electromechanical impedance dynamic response curve obtaining unit is used to obtain the electromechanical impedance dynamic response curve of the sandwich piezoelectric ultrasonic transducer according to the current and the potential difference.

[0145] On this basis, optionally, the dynamic response result also includes a displacement response curve, and the dynamic response result obtaining module 350 may also include:

[0146] An angular frequency determination unit, used to determine the angular frequency of the electromechanical impedance dynamic response curve at the peak;

[0147] The displacement response curve obtaining unit is used to obtain the displacement response curve at the outer boundary of the matching thickness at the angular frequency according to the angular frequency and the global electromechanical impedance matrix for the outer boundary of the matching thickness in the thickness direction of the matching layer.

[0148] The embodiment of the present invention provides a dynamic modeling device for a sandwich piezoelectric ultrasonic transducer. The electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer is determined according to the dynamic equation of the piezoelectric material used in the piezoelectric layer through an electromechanical impedance matrix determination module; the backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer can be determined according to the dynamic equation of the elastic material used in the backing layer through a backing stiffness matrix determination module; the matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer can be determined according to the dynamic equation of the elastic material used in the matching layer through a matching stiffness matrix determination module; then, the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix are assembled through a global electromechanical impedance matrix acquisition module to obtain a global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer; thus, the dynamic response result of the sandwich piezoelectric ultrasonic transducer is obtained according to the global electromechanical impedance matrix through a dynamic response result acquisition module. The above device realizes fast and accurate dynamic modeling of the sandwich piezoelectric ultrasonic transducer by determining the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix.

[0149] The dynamic modeling device for a sandwich piezoelectric ultrasonic transducer provided in an embodiment of the present invention can execute the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer provided in any embodiment of the present invention, and has functional modules and beneficial effects corresponding to the execution method.

[0150] It is worth noting that in the above-mentioned embodiment of the dynamic modeling device for the sandwich piezoelectric ultrasonic transducer, the various units and modules included are only divided according to functional logic, but are not limited to the above-mentioned division, as long as the corresponding functions can be achieved; in addition, the specific names of the functional units are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of the present invention.

[0151] Figure 7A schematic diagram of the structure of an electronic device 10 that can be used to implement an embodiment of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0152] like Figure 7 As shown, the electronic device 10 includes at least one processor 11, and a memory connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 to the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. An input / output (I / O) interface 15 is also connected to the bus 14.

[0153] A number of components in the electronic device 10 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a disk, an optical disk, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0154] The processor 11 may be a variety of general and / or dedicated processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 may execute the various methods and processes described above, such as a dynamic modeling method for a sandwich piezoelectric ultrasonic transducer.

[0155] In some embodiments, the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer may be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 18. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 10 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer described above may be performed. Alternatively, in other embodiments, the processor 11 may be configured to execute the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer in any other appropriate manner (e.g., by means of firmware).

[0156] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0157] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine as a stand-alone software package and partially on a remote machine, or entirely on a remote machine or server.

[0158] In the context of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in combination with an instruction execution system, device or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0159] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0160] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0161] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0162] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0163] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A dynamic modeling method for a sandwich piezoelectric ultrasonic transducer, characterized in that: The sandwich piezoelectric ultrasonic transducer comprises a piezoelectric layer, a matching layer and a backing layer, and the method comprises: Determining an electromechanical impedance matrix of a relationship between generalized stress and generalized displacement of the piezoelectric layer according to a dynamic equation of a piezoelectric material used in the piezoelectric layer; Determining a backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer according to a dynamic equation of the elastic material used in the backing layer; Determining a matching stiffness matrix of a relationship between generalized stress and generalized displacement of the matching layer according to a dynamic equation of an elastic material used in the matching layer; Assembling the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix to obtain a global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer; According to the global electromechanical impedance matrix, a dynamic response result of the sandwich piezoelectric ultrasonic transducer is obtained.

2. The method according to claim 1, characterized in that For the first connection boundary between the backing layer and the piezoelectric layer in the thickness direction, the piezoelectric radial outer boundary of the piezoelectric layer in the radial direction, and the second connection boundary between the piezoelectric layer and the matching layer in the thickness direction, The electromechanical impedance matrix of determining the relationship between the generalized stress and the generalized displacement of the piezoelectric layer according to the dynamic equation of the piezoelectric material used in the piezoelectric layer comprises: According to the dynamic equation of the piezoelectric material used in the piezoelectric layer, respectively determine the stress vectors along the first connection boundary, along the piezoelectric radial outer boundary and along the second connection boundary; According to the dynamic equation of the piezoelectric material used in the piezoelectric layer, respectively determine the displacement vectors along the first connection boundary, along the piezoelectric radial outer boundary and along the second connection boundary; According to the determined total stress vectors and total displacement vectors, an electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer is determined.

3. The method according to claim 1, characterized in that With respect to the backing thickness outer boundary of the backing layer in the thickness direction, the backing radial outer boundary of the backing layer in the radial direction, and the first connection boundary between the backing layer and the piezoelectric layer in the thickness direction, The backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer is determined according to the dynamic equation of the elastic material used in the backing layer, including: According to the dynamic equation of the elastic material used in the backing layer, the stress vectors along the outer boundary of the backing thickness, along the outer boundary of the backing radial direction and along the first connection boundary are determined respectively; According to the dynamic equation of the elastic material used in the backing layer, the displacement vectors along the outer boundary of the backing thickness, along the outer boundary of the backing radial direction and along the first connecting boundary are determined respectively; According to the determined total stress vectors and total displacement vectors, a backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer is determined.

4. The method according to claim 1, characterized in that: For the second connection boundary between the piezoelectric layer and the matching layer in the thickness direction, the matching radial outer boundary of the matching layer in the radial direction, and the matching thickness outer boundary of the matching layer in the thickness direction, Determining the matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer according to the dynamic equation of the elastic material used in the matching layer includes: Determining stress vectors along the second connection boundary, along the matching radial outer boundary, and along the matching thickness outer boundary, respectively, according to a dynamic equation of the elastic material used in the matching layer; Determining displacement vectors along the second connection boundary, along the matching radial outer boundary, and along the matching thickness outer boundary, respectively, according to a dynamic equation of the elastic material used in the matching layer; According to the determined total stress vectors and total displacement vectors, a matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer is determined.

5. The method according to claim 1, characterized in that The dynamic response result includes an electromechanical impedance dynamic response curve. The dynamic response result of the sandwich piezoelectric ultrasonic transducer is obtained according to the global electromechanical impedance matrix, including: For a first connection boundary between the backing layer and the piezoelectric layer in the thickness direction, obtaining an electric displacement at the first connection boundary according to the global electromechanical impedance matrix; According to the electric displacement and the preset angular frequency range, obtaining a current flowing through the sandwich piezoelectric ultrasonic transducer within the preset angular frequency range; Obtaining a potential difference between electrode surfaces of the two electrodes according to the potentials of the two electrodes corresponding to the piezoelectric layer and the preset angular frequency range; According to the current and the potential difference, an electromechanical impedance dynamic response curve of the sandwich piezoelectric ultrasonic transducer is obtained.

6. The method according to claim 5, characterized in that The dynamic response result also includes a displacement response curve. The dynamic response result of the sandwich piezoelectric ultrasonic transducer obtained according to the global electromechanical impedance matrix also includes: Determining the angular frequency of the electromechanical impedance dynamic response curve at the peak; For the outer boundary of the matching thickness of the matching layer in the thickness direction, a displacement response curve at the outer boundary of the matching thickness at the angular frequency is obtained according to the angular frequency and the global electromechanical impedance matrix.

7. A dynamic modeling device for a sandwich piezoelectric ultrasonic transducer, characterized in that: The sandwich piezoelectric ultrasonic transducer comprises a piezoelectric layer, a matching layer and a backing layer, and the device comprises: An electromechanical impedance matrix determination module, used to determine the electromechanical impedance matrix of the relationship between the generalized stress and the generalized displacement of the piezoelectric layer according to the dynamic equation of the piezoelectric material used in the piezoelectric layer; A backing stiffness matrix determination module, used to determine a backing stiffness matrix of the relationship between the generalized stress and the generalized displacement of the backing layer according to a dynamic equation of the elastic material applied in the backing layer; A matching stiffness matrix determination module, used to determine a matching stiffness matrix of the relationship between the generalized stress and the generalized displacement of the matching layer according to a dynamic equation of the elastic material used in the matching layer; A global electromechanical impedance matrix obtaining module is used to assemble the electromechanical impedance matrix, the backing stiffness matrix and the matching stiffness matrix to obtain a global electromechanical impedance matrix of the sandwich piezoelectric ultrasonic transducer; The dynamic response result obtaining module is used to obtain the dynamic response result of the sandwich piezoelectric ultrasonic transducer according to the global electromechanical impedance matrix.

8. An electronic device, characterized in that: include: at least one processor; as well as a memory communicatively connected to the at least one processor; wherein, The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor performs the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer according to any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer as described in any one of claims 1 to 6 when executed.

10. A computer program product, characterized in that The computer program product comprises a computer program, and when the computer program is executed by a processor, the computer program implements the dynamic modeling method for a sandwich piezoelectric ultrasonic transducer according to any one of claims 1 to 6.

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