Miniature high-voltage module for nuclear radiation detector

Abstract

The invention discloses a miniature high-voltage module for a nuclear radiation detector. The miniature high-voltage module comprises a Boost chip circuit, a driving circuit and a voltage doubling rectifying circuit, the input end of the Boost chip circuit is connected with a power supply, the output end of the Boost chip circuit is connected with the driving circuit, and the Boost chip circuit is used for boosting the voltage input into the input end of the Boost chip circuit and outputting the boosted voltage to the driving circuit; the driving circuit is used for providing bidirectional current for the voltage doubling rectifying circuit based on the voltage output by the output end of the Boost chip circuit; and the voltage doubling rectifying circuit is used for amplifying the voltage output by the driving circuit and outputting a target voltage meeting the detection condition of the nuclear radiation detector. According to the module, the Boost chip circuit is adopted, the size of the miniature high-voltage module can be optimized, meanwhile, the miniature high-voltage module is additionally provided with the driving circuit, the requirement of some special detectors for large current is met, and the adaptation degree between the miniature high-voltage module and the nuclear radiation detector can be improved.

Description

Technical Field

[0001] The invention relates to the field of electronic technology, and in particular to a miniature high-voltage module for a nuclear radiation detector. Background Art

[0002] Nuclear radiation detectors convert physical radiation signals into testable voltage signals. Such detectors require the system to provide a higher bias voltage. Under the excitation high voltage electric field, the weak electronic signal generated by the physical radiation signal can be amplified and detected by the subsequent circuit.

[0003] In the prior art, a transformer is usually required to step up the voltage and combine it with a voltage-doubling rectifier to generate a high-voltage electric field. However, the high-voltage circuit constructed in this way is large in size, consumes a lot of power, and has a weak driving current capability, which cannot meet the high current requirements of some special detectors. Summary of the invention

[0004] In view of the above technical status, the present invention provides a miniature high-voltage module for nuclear radiation detectors to solve the problem that the existing high-voltage circuits are large in size, high in consumption, and have weak driving current capability and cannot meet the requirements of some special detectors for high current.

[0005] In order to achieve the above object, the present invention provides the following technical solutions:

[0006] A micro high-voltage module for a nuclear radiation detector comprises: a Boost chip circuit, a drive circuit, and a voltage doubler rectifier circuit; the input end of the Boost chip circuit is connected to a power supply, the output end of the Boost chip circuit is connected to the drive circuit, the Boost chip circuit is used to boost the voltage input to the input end of the Boost chip circuit, and output the boosted voltage to the drive circuit; the drive circuit is used to provide a bidirectional current for the voltage doubler rectifier circuit based on the voltage output from the output end of the Boost chip circuit; the voltage doubler rectifier circuit is used to amplify the voltage output by the drive circuit, and output a target voltage that meets the detection conditions of the nuclear radiation detector.

[0007] In an optional embodiment of the present application, the driving circuit includes: a first driving sub-circuit, a second driving sub-circuit, a first capacitor, and a second capacitor; the first driving sub-circuit and the second driving sub-circuit present a symmetrical push-pull drive topology structure; one end of the first capacitor is connected to the input end of the first driving sub-circuit, and the other end is respectively connected to the input end of the second driving sub-circuit and the output end of the Boost chip circuit; the output ends of the first driving sub-circuit and the second driving sub-circuit are connected to one end of the second capacitor; the other end of the second capacitor is connected to the input end of the voltage doubler rectifier circuit.

[0008] In an optional embodiment of the present application, the first driving subcircuit includes: a first resistor, a second resistor, a first NPN diode, a third capacitor, a third resistor, a fourth resistor, a first PNP diode and a first inductor; the base of the first NPN diode is respectively connected to the first resistor, the second resistor and one end of the first capacitor; the collector of the first NPN diode is connected to the other end of the first resistor; the emitter of the first NPN diode is connected to the other end of the second resistor; one end of the third capacitor is respectively connected to the collector of the first NPN diode and one end of the third resistor; the other end of the third capacitor is respectively connected to the emitter of the first NPN diode and one end of the fourth resistor; the base of the first PNP diode is connected to the other end of the fourth resistor; the emitter of the first PNP diode is connected to the other end of the third resistor; the collector of the first PNP diode is connected to one end of the first inductor; the other end of the first inductor is connected to the second The second driving sub-circuit comprises: a fifth resistor, a sixth resistor, a second PNP diode, a fourth capacitor, a seventh resistor, an eighth resistor, a second NPN diode and a second inductor; the base of the second PNP diode is respectively connected to the fifth resistor, the sixth resistor and the other end of the first capacitor; the emitter of the second PNP diode is connected to the other end of the fifth resistor; the collector of the second PNP diode is connected to the other end of the sixth resistor; one end of the fourth capacitor is respectively connected to the collector of the second PNP diode and one end of the seventh resistor; the other end of the fourth capacitor is respectively connected to the emitter of the second PNP diode and one end of the eighth resistor; the base of the second NPN diode is connected to the other end of the eighth resistor; the emitter of the second NPN diode is connected to the other end of the seventh resistor; the collector of the second NPN diode is connected to one end of the second inductor; the other end of the second inductor is connected to one end of the second capacitor.

[0009] In an optional embodiment of the present application, the Boost chip circuit includes: the Boost chip circuit includes: a Boost chip, a third inductor, an isolation diode, a ninth resistor, and a tenth resistor; the Boost chip includes: an input power pin, a switch pin and a feedback pin; the input power pin is respectively connected to the power supply and one end of the third inductor; the switch pin is respectively connected to the other end of the third inductor and the positive electrode of the isolation diode; the negative electrode of the isolation diode is respectively connected to one end of the ninth resistor and the output end of the Boost chip; the feedback pin is respectively connected to the other end of the ninth resistor and one end of the tenth resistor; the other end of the tenth resistor is grounded.

[0010] In an optional embodiment of the present application, the voltage doubling rectifier circuit includes: m cascaded voltage doubling sub-circuits, each of which is used to amplify the voltage output by the driving circuit step by step to output a target voltage that meets the detection conditions of the nuclear radiation detector; m is a positive integer.

[0011] In an optional embodiment of the present application, the voltage doubling sub-circuit includes: a first diode, a second diode and a fifth capacitor; the anode of the first diode is connected to the cathode of the second diode, the first end of the fifth capacitor is connected to the cathode of the first diode, and the second end of the fifth capacitor is connected to the anode of the second diode; wherein, the anode of the first diode of the i-th voltage doubling sub-circuit and the cathode of the second diode include an i-th node; the first node of the first voltage doubling sub-circuit is connected to the input end of the voltage doubling rectifier circuit; the cathode of the first diode of the m-th voltage doubling sub-circuit is connected to the output end of the voltage doubling rectifier circuit; the i-th node and the i+1-th node of adjacent voltage doubling sub-circuits are connected through a sixth capacitor; the cathode of the first diode of the i-th voltage doubling sub-circuit is connected to the anode of the second diode of the i+1-th voltage doubling sub-circuit; the fifth capacitors between adjacent voltage doubling sub-circuits are connected in series; i is a positive integer greater than 1.

[0012] In an optional implementation manner of the present application, it further includes: a filtering circuit; the filtering circuit includes: a plurality of cascaded filters; each of the filters is respectively connected to the fifth capacitor of each level of the voltage multiplier sub-circuit.

[0013] In an optional embodiment of the present application, the filter comprises: a filter capacitor and a filter resistor; one end of the filter capacitor of the first filter is connected to the second end of the fifth capacitor of the first voltage doubler sub-circuit; the other end of the filter capacitor of the first filter is connected to one end of the filter resistor of the first filter; the other end of the filter resistor of the first filter is respectively connected to the first end of the fifth capacitor of the first voltage doubler sub-circuit and the second end of the fifth capacitor of the second voltage doubler sub-circuit; one end of the filter capacitor of the i-th filter is respectively connected to one end of the filter capacitor and the filter resistor of the i-1th filter; the other end of the filter capacitor of the i-th filter is connected to one end of the filter resistor of the i-th filter; the other end of the filter resistor of the i-th filter is respectively connected to the first end of the fifth capacitor of the i-th voltage doubler sub-circuit and the second end of the fifth capacitor of the i+1th voltage doubler sub-circuit; i is a positive integer greater than 1.

[0014] In an optional implementation manner of the present application, the voltage doubler rectifier circuit includes 10 levels of voltage doubler sub-circuits, and each level of voltage doubler sub-circuit is used to output a DC voltage of 120 volts.

[0015] Compared with the prior art, the micro high-voltage module for a nuclear radiation detector provided by the present invention adopts a Boost chip circuit to replace the transformer boost in the prior art, which is beneficial to optimizing the volume of the micro high-voltage module. At the same time, the micro high-voltage module adds a driving circuit, and the driving circuit provides a bidirectional current for the voltage doubler rectifier circuit based on the voltage output from the output end of the Boost chip circuit, thereby making the final output voltage significantly higher than the existing design, so as to meet the requirements of some special detectors for large current, which is beneficial to improving the compatibility between the micro high-voltage module and the nuclear radiation detector. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0017] Figure 1 A structural diagram of a micro high-voltage module for a nuclear radiation detector provided in an embodiment of the present application;

[0018] Figure 2 A structural diagram of the Boost chip circuit provided in an embodiment of the present application;

[0019] Figure 3 A structural diagram of a driving circuit provided in an embodiment of the present application;

[0020] Figure 4 A structural diagram of a voltage doubler rectifier circuit provided in an embodiment of the present application;

[0021] Figure 5 A structural diagram of a filter circuit provided in an embodiment of the present application. DETAILED DESCRIPTION

[0022] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0023] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0024] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The meaning of "several" is one or more, unless otherwise clearly and specifically defined.

[0025] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by the terms "up", "down", "front", "back", "left", "right", etc. are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0026] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0027] Nuclear radiation detectors convert physical radiation signals into testable voltage signals. Such detectors require the system to provide a higher bias voltage. Under the excitation high voltage electric field, the weak electronic signal generated by the physical radiation signal can be amplified and detected by the subsequent circuit.

[0028] In the prior art, a transformer is usually required to step up the voltage and combine it with a voltage-doubling rectifier to generate a high-voltage electric field. However, the high-voltage circuit constructed in this way is large in size, consumes a lot of power, and has a weak driving current capability, which cannot meet the high current requirements of some special detectors.

[0029] The present application provides a miniature high-voltage module for a nuclear radiation detector to solve the problem that the existing high-voltage circuit is large in size, consumes a lot of power, has a weak driving current capability, and cannot meet the requirements of some special detectors for high current.

[0030] Please refer to Figure 1 , Figure 1 This is a structural diagram of a miniature high-voltage module for a nuclear radiation detector provided in an embodiment of the present application.

[0031] like Figure 1 As shown, the micro high-voltage module for nuclear radiation detector includes: a Boost chip circuit 101, a drive circuit 102, and a voltage doubler rectifier circuit 103.

[0032] The Boost chip circuit 101 is used to boost the voltage input to the input end of the Boost chip circuit and output the boosted voltage to the drive circuit 102;

[0033] The driving circuit 102 is used to provide a bidirectional current to the voltage doubler rectifier circuit 103 based on the voltage outputted from the output terminal of the Boost chip circuit;

[0034] The voltage doubler rectifier circuit 103 is used to amplify the voltage output by the drive circuit 102 and output a target voltage that meets the detection conditions of the nuclear radiation detector.

[0035] In an optional implementation of the present application, in order to remove high-frequency noise and smooth the voltage output, the micro high-voltage module for the nuclear radiation detector further includes: a filter circuit 104 .

[0036] Furthermore, in order to facilitate understanding of the micro high-voltage module for a nuclear radiation detector provided by the present application, the micro high-voltage module is described in detail below in combination with the circuit structure of the Boost chip circuit 101, the drive circuit 102, the voltage doubler rectifier circuit 103 and the filter circuit 104.

[0037] For Boost Chip Circuit 101, please refer to Figure 2 , Figure 2 This is a structural diagram of the Boost chip circuit provided in an embodiment of the present application.

[0038] like Figure 2As shown, the Boost chip circuit mainly includes: a Boost chip U1, a third inductor L3, an isolation diode D3, a ninth resistor R9, and a tenth resistor R10.

[0039] The boost chip U1 is a DC-DC converter, whose main function is to increase the input lower voltage to a higher output voltage.

[0040] In an optional implementation of the present application, the Boost chip U1 may be a Boost chip of model LT8365, or may be a Boost chip of other models, and the present application does not impose any limitation on this.

[0041] Specifically, the Boost chip U1 mainly includes: an input power pin VIN, a switch pin SW1 / SW2 and a feedback pin FBX;

[0042] The input power pin VIN is connected to the power supply and one end of the third inductor L3 respectively; the switch pins SW1 / SW2 are connected to the other end of the third inductor L3 and the positive electrode of the isolation diode D3 respectively; the negative electrode of the isolation diode D3 is connected to one end of the ninth resistor R9 and the output end of the Boost chip circuit respectively;

[0043] The feedback pin FBX is respectively connected to the other end of the ninth resistor R9 and one end of the tenth resistor R10; the other end of the tenth resistor R10 is grounded to form a voltage feedback circuit between the feedback pin FBX and the ground.

[0044] In actual application, the third inductor L3 is used as a boost energy storage device. When the switch pin SW1 / SW2 control circuit is turned on, the power supply voltage is directly applied to the third inductor L3, and the current increases linearly through the third inductor L3. The inductor stores energy. When the switch pin SW1 / SW2 control circuit is turned off, the current in the third inductor L3 cannot immediately become zero. At this time, the energy in the third inductor L3 is released and superimposed with the input voltage of the power supply, thereby generating an output voltage higher than the input voltage.

[0045] Furthermore, the Boost chip also includes: a control and protection pin EN / UV, the control and protection pin EN / UV is connected to one end of the resistor R11, and the other end of the resistor R11 is respectively connected to the power supply and one end of the third inductor L3, thereby controlling the working state of the Boost chip circuit and preventing unstable operation or damage caused by too low input voltage.

[0046] The input end of the Boost chip circuit is grounded through capacitor C11, and the output end is grounded through capacitor C12. The Boost chip also includes a soft start pin SS, which is grounded through capacitor C8 to reduce the large current impact when the boost chip circuit starts, prevent output voltage overshoot, and protect the load and power supply circuit.

[0047] The Boost chip circuit also includes: a compensation pin Vc, which is grounded through a resistor R12 and a capacitor C9 to improve the stability of the Boost chip circuit, reduce fluctuations in the output voltage, avoid oscillations, and ensure a quick response to transient load changes.

[0048] The Boost chip circuit also includes a frequency setting pin RT, which is grounded via a resistor R13 and is used to adjust the operating frequency of the Boost chip circuit.

[0049] The Boost chip circuit also includes an internal pin IntVcc, and the internal pin IntVcc is grounded through a capacitor C10.

[0050] For the drive circuit 102, please refer to Figure 3 , Figure 3 A structural diagram of a driving circuit provided in an embodiment of the present application.

[0051] like Figure 3 As shown, the driving circuit 102 includes: a first driving sub-circuit 301, a second driving sub-circuit 302, a first capacitor C1 and a second capacitor C2.

[0052] Specifically, the driving circuit has a symmetrical push-pull topology structure, one end of the first capacitor C1 is connected to the input end of the first driving sub-circuit 301, and the other end is respectively connected to the input end of the second driving sub-circuit 302 and the output end of the Boost chip circuit (i.e., the input end of the driving circuit 102); the output ends of the first driving sub-circuit 301 and the second driving sub-circuit 302 are connected to one end of the second capacitor C2; the other end of the second capacitor C2 is connected to the input end of the voltage doubler rectifier circuit 103.

[0053] Specifically, the first driving sub-circuit 301 includes: a first resistor R1, a second resistor R2, a first NPN diode Q1, a third capacitor C3, a third resistor R3, a fourth resistor R4, a first PNP diode Q2 and a first inductor L1;

[0054] The base of the first NPN diode Q1 is connected to the first resistor R1, the second resistor R2 and one end of the first capacitor C1 respectively; the collector of the first NPN diode Q1 is connected to the other end of the first resistor R1; the emitter of the first NPN diode Q1 is connected to the other end of the second resistor R2.

[0055] One end of the third capacitor C3 is connected to the collector of the first NPN diode Q1 and one end of the third resistor R3 respectively; the other end of the third capacitor C3 is connected to the emitter of the first NPN diode Q1 and one end of the fourth resistor R4 respectively;

[0056] The base of the first PNP diode Q2 is connected to the other end of the fourth resistor R4; the emitter of the first PNP diode Q2 is connected to the other end of the third resistor R3; the collector of the first PNP diode Q2 is connected to one end of the first inductor L1; the other end of the first inductor L1 is connected to one end of the second capacitor C2;

[0057] The second driving sub-circuit 302 includes: a fifth resistor R5, a sixth resistor R6, a second PNP diode Q3, a fourth capacitor C4, a seventh resistor R7, an eighth resistor R8, a second NPN diode Q4 and a second inductor L2;

[0058] The base of the second PNP diode Q3 is connected to the fifth resistor R5, the sixth resistor R6 and the other end of the first capacitor C1 respectively; the emitter of the second PNP diode Q3 is connected to the other end of the fifth resistor R5; the collector of the second PNP diode Q3 is connected to the other end of the sixth resistor R6;

[0059] One end of the fourth capacitor C4 is connected to the collector of the second PNP diode Q3 and one end of the seventh resistor R7 respectively; the other end of the fourth capacitor C4 is connected to the emitter of the second PNP diode Q3 and one end of the eighth resistor R8 respectively;

[0060] The base of the second NPN diode Q4 is connected to the other end of the eighth resistor R8; the emitter of the second NPN diode Q4 is connected to the other end of the seventh resistor R7; the collector of the second NPN diode Q4 is connected to one end of the second inductor L2; the other end of the second inductor L2 is connected to one end of the second capacitor C2.

[0061] In actual application, the square wave signal at the input end of the input driving circuit 102 is AC-coupled to the first NPN diode Q1 through the first capacitor C1 to isolate the influence of the DC bias operating point of the first NPN diode Q1 on the input signal.

[0062] In the embodiment of the present application, the first NPN diode Q1 and the second PNP diode Q3 can be regarded as the buffer stage of the driving circuit 102, wherein the first resistor R1 and the second resistor R2 are used to provide a DC bias for the first NPN diode Q1; the fifth resistor R5 and the sixth resistor R6 are used to provide a DC bias for the second PNP diode Q3.

[0063] The third capacitor C3 and the fourth resistor R4, as well as the fourth capacitor C4 and the eighth resistor R8 can be regarded as two sets of low-pass filters to eliminate pulse peaks and damp square wave oscillations.

[0064] The first PNP diode Q2 and the second NPN diode Q4 can be regarded as the driving stage of the driving circuit 102 to provide excitation pulses and driving circuits for the voltage doubler rectifier circuit 103; wherein the third resistor R3 and the seventh resistor R7 are current limiting protection resistors of the first PNP diode Q2 and the second NPN diode Q4 respectively, and the first inductor L1 and the second inductor L2 are post-stage impedance matching inductors.

[0065] Further, for the voltage doubler rectifier circuit 103, please refer to Figure 4 , Figure 4 A structural diagram of a voltage doubler rectifier circuit provided in an embodiment of the present application.

[0066] like Figure 4 As shown, the voltage doubling rectifier circuit includes m cascaded voltage doubling sub-circuits, each of which is used to amplify the voltage output by the driving circuit 102 step by step and output a target voltage that meets the detection conditions of the nuclear radiation detector; m is a positive integer.

[0067] Specifically, for the voltage doubler sub-circuit, the circuit structure of each level of the voltage doubler sub-circuit is substantially the same, including: a first diode D1, a second diode D2 and a fifth capacitor C5.

[0068] Among them, the anode of the first diode D1 is connected to the cathode of the second diode D2, the first end of the fifth capacitor C5 is connected to the cathode of the first diode D1, and the second end of the fifth capacitor C5 is connected to the anode of the second diode D2; wherein the anode of the first diode D1 of the i-th voltage doubling sub-circuit 401 and the cathode of the second diode D2 include the i-th node.

[0069] The first node of the first voltage doubling subcircuit is connected to the input end of the voltage doubling rectifier circuit; the cathode of the first diode D1 of the mth voltage doubling subcircuit is connected to the output end of the voltage doubling rectifier circuit;

[0070] The i-th node and the i+1-th node of adjacent voltage doubling sub-circuits are connected via a sixth capacitor C6; the cathode of the first diode D1 of the i-th voltage doubling sub-circuit is connected to the anode of the second diode D2 of the i+1-th voltage doubling sub-circuit; the fifth capacitors C5 between adjacent voltage doubling sub-circuits are connected in series; i is a positive integer greater than 1.

[0071] In an optional embodiment of the present application, the voltage doubling rectifier circuit adopts 10 levels of voltage doubling, and each level of voltage doubling sub-circuit can output a maximum of 120V DC high voltage; the first diode D1 and the second diode D2 of each level of the voltage doubling sub-circuit are unidirectionally conducted when a high-voltage pulse is input to charge the fifth capacitor C5, and the fifth capacitor C5 of each level of the voltage doubling sub-circuit is connected in series during the half-wave rectification of the high-voltage signal, thereby achieving the voltage doubling function of the entire circuit.

[0072] Further, for the filter circuit 104, please refer to Figure 5 , Figure 5 A structural diagram of a filter circuit provided in an embodiment of the present application.

[0073] like Figure 5 As shown, the filtering circuit is a plurality of cascaded filters, and each of the filters is respectively connected to the fifth capacitor C5 of each level of the voltage multiplication sub-circuit.

[0074] Specifically, each level of the filter includes a filter capacitor C7 and a filter resistor R11

[0075] Each of the filters is respectively connected to the fifth capacitor C5 of each level of the voltage doubler sub-circuit.

[0076] One end of the filter capacitor C7 of the first filter is connected to the second end of the fifth capacitor C5 of the first voltage doubler subcircuit; the other end of the filter capacitor C7 of the first filter is connected to one end of the filter resistor R11 of the first filter; the other end of the filter resistor C7 of the first filter is respectively connected to the first end of the fifth capacitor C5 of the first voltage doubler subcircuit and the second end of the fifth capacitor C5 of the second voltage doubler subcircuit;

[0077] One end of the filter capacitor of the i-th filter is respectively connected to one end of the filter capacitor C7 and the filter resistor R11 of the i-1-th filter; the other end of the filter capacitor C7 of the i-th filter is connected to one end of the filter resistor R11 of the i-th filter; the other end of the filter resistor R11 of the i-th filter is respectively connected to the first end of the fifth capacitor C7 of the i-th voltage doubler sub-circuit and the second end of the fifth capacitor C7 of the i+1-th voltage doubler sub-circuit; i is a positive integer greater than 1.

[0078] To summarize, the micro high-voltage module for a nuclear radiation detector provided in the present application adopts a Boost chip circuit to replace the transformer boost in the prior art, which is beneficial to optimizing the volume of the micro high-voltage module. At the same time, the micro high-voltage module adds a driving circuit, which provides a bidirectional current for the voltage doubler rectifier circuit based on the voltage output by the driving circuit based on the output end of the Boost chip circuit, thereby making the final output voltage significantly higher than the existing design, so as to meet the requirements of some special detectors for large current, which is beneficial to improving the compatibility between the micro high-voltage module and the nuclear radiation detector.

[0079] The embodiments of the present disclosure are described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, a person skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A micro high voltage module for a nuclear radiation detector, characterized in that: include: Boost chip circuit, drive circuit, voltage doubler rectifier circuit; The input end of the Boost chip circuit is connected to a power supply, and the output end of the Boost chip circuit is connected to the drive circuit. The Boost chip circuit is used to boost the voltage input to the input end of the Boost chip circuit and output the boosted voltage to the drive circuit; The driving circuit is used to provide a bidirectional current for the voltage doubler rectifier circuit based on the voltage outputted by the output terminal of the Boost chip circuit; The voltage doubler rectifier circuit is used to amplify the voltage output by the drive circuit and output a target voltage that meets the detection conditions of the nuclear radiation detector.

2. The micro high voltage module for nuclear radiation detector according to claim 1, characterized in that: The driving circuit comprises: a first driving sub-circuit, a second driving sub-circuit, a first capacitor, and a second capacitor; The first driving subcircuit and the second driving subcircuit present a symmetrical push-pull driving topology structure; one end of the first capacitor is connected to the input end of the first driving subcircuit, and the other end is respectively connected to the input end of the second driving subcircuit and the output end of the Boost chip circuit; the output ends of the first driving subcircuit and the second driving subcircuit are connected to one end of the second capacitor; the other end of the second capacitor is connected to the input end of the voltage doubler rectifier circuit.

3. The micro high voltage module for nuclear radiation detector according to claim 2, characterized in that: The first driving subcircuit includes: a first resistor, a second resistor, a first NPN diode, a third capacitor, a third resistor, a fourth resistor, a first PNP diode and a first inductor; The base of the first NPN diode is connected to the first resistor, the second resistor and one end of the first capacitor respectively; the collector of the first NPN diode is connected to the other end of the first resistor; the emitter of the first NPN diode is connected to the other end of the second resistor; One end of the third capacitor is connected to the collector of the first NPN diode and one end of the third resistor respectively; the other end of the third capacitor is connected to the emitter of the first NPN diode and one end of the fourth resistor respectively; The base of the first PNP diode is connected to the other end of the fourth resistor; the emitter of the first PNP diode is connected to the other end of the third resistor; the collector of the first PNP diode is connected to one end of the first inductor; the other end of the first inductor is connected to one end of the second capacitor; The second driving sub-circuit includes: a fifth resistor, a sixth resistor, a second PNP diode, a fourth capacitor, a seventh resistor, an eighth resistor, a second NPN diode and a second inductor; The base of the second PNP diode is connected to the fifth resistor, the sixth resistor and the other end of the first capacitor respectively; the emitter of the second PNP diode is connected to the other end of the fifth resistor; the collector of the second PNP diode is connected to the other end of the sixth resistor; One end of the fourth capacitor is connected to the collector of the second PNP diode and one end of the seventh resistor respectively; the other end of the fourth capacitor is connected to the emitter of the second PNP diode and one end of the eighth resistor respectively; The base of the second NPN diode is connected to the other end of the eighth resistor; the emitter of the second NPN diode is connected to the other end of the seventh resistor; the collector of the second NPN diode is connected to one end of the second inductor; and the other end of the second inductor is connected to one end of the second capacitor.

4. The micro high voltage module for nuclear radiation detector according to claim 1, characterized in that: The Boost chip circuit comprises: The Boost chip circuit comprises: a Boost chip, a third inductor, an isolation diode, a ninth resistor, and a tenth resistor; The Boost chip comprises: an input power pin, a switch pin and a feedback pin; The input power pin is connected to the power supply and one end of the third inductor respectively; the switch pin is connected to the other end of the third inductor and the positive electrode of the isolation diode respectively; the negative electrode of the isolation diode is connected to one end of the ninth resistor and the output end of the Boost chip respectively; The feedback pin is connected to the other end of the ninth resistor and one end of the tenth resistor respectively; the other end of the tenth resistor is grounded.

5. The micro high voltage module for nuclear radiation detector according to claim 1, characterized in that: The voltage doubler rectifier circuit comprises: m cascaded voltage doubling sub-circuits, each of which is used to amplify the voltage output by the driving circuit step by step, and output a target voltage that meets the detection conditions of the nuclear radiation detector; m is a positive integer.

6. The micro high voltage module for nuclear radiation detector according to claim 5, characterized in that: The voltage doubling subcircuit comprises: a first diode, a second diode and a fifth capacitor; The anode of the first diode is connected to the cathode of the second diode, the first end of the fifth capacitor is connected to the cathode of the first diode, and the second end of the fifth capacitor is connected to the anode of the second diode; wherein the anode of the first diode and the cathode of the second diode of the i-th voltage doubling sub-circuit include an i-th node; The first node of the first voltage doubling subcircuit is connected to the input end of the voltage doubling rectifier circuit; the cathode of the first diode of the mth voltage doubling subcircuit is connected to the output end of the voltage doubling rectifier circuit; The i-th node and the i+1-th node of adjacent voltage doubling subcircuits are connected via a sixth capacitor; the cathode of the first diode of the i-th level voltage doubling subcircuit is connected to the anode of the second diode of the i+1-th level voltage doubling subcircuit; the fifth capacitors between adjacent voltage doubling subcircuits are connected in series; i is a positive integer greater than 1.

7. The micro high voltage module for nuclear radiation detector according to claim 5, characterized in that: Also includes: Filter circuit; The filtering circuit comprises: a plurality of cascaded filters; Each of the filters is respectively connected to the fifth capacitor of each level of the voltage doubler circuit.

8. The micro high voltage module for nuclear radiation detector according to claim 7, characterized in that: The filter comprises: a filter capacitor and a filter resistor; One end of the filter capacitor of the first filter is connected to the second end of the fifth capacitor of the first voltage doubler subcircuit; the other end of the filter capacitor of the first filter is connected to one end of the filter resistor of the first filter; the other end of the filter resistor of the first filter is respectively connected to the first end of the fifth capacitor of the first voltage doubler subcircuit and the second end of the fifth capacitor of the second voltage doubler subcircuit; One end of the filter capacitor of the i-th filter is respectively connected to one end of the filter capacitor and the filter resistor of the i-1th filter; the other end of the filter capacitor of the i-th filter is connected to one end of the filter resistor of the i-th filter; the other end of the filter resistor of the i-th filter is respectively connected to the first end of the fifth capacitor of the i-th voltage doubler sub-circuit and the second end of the fifth capacitor of the i+1th voltage doubler sub-circuit; i is a positive integer greater than 1.

9. The micro high voltage module for a nuclear radiation detector according to any one of claims 5 to 8, characterized in that: The voltage doubler rectifier circuit includes 10 voltage doubler sub-circuits, and each voltage doubler sub-circuit is used to output a direct current voltage of 120 volts.

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