Magnetic sensor

Abstract

A magnetic sensor (100) according to one embodiment of the present invention is provided with: a magnetoresistive effect element (10) having a fixed magnetic layer (11), a free magnetic layer (12), and an intermediate layer (13) formed between the fixed magnetic layer (11) and the free magnetic layer (12), the magnetoresistive effect element (10) having a sensitivity axis in a first direction; a wiring (20) having a first surface (21) facing the magnetoresistive effect element (10), the wiring (20) being located in a second direction that is along the stacking direction of the magnetoresistive effect element (10) and that intersects the first direction of the magnetoresistive effect element (10); and a magnetic permeable part (30) which is provided on at least a part of a surface other than the first surface (21) among the surfaces of the wiring (20), which contains a ferromagnetic body, and which arranges the wiring (20) so that an induced magnetic field generated when energizing is applied to the magnetoresistive effect element (10) in the first direction, whereby the induced magnetic field arranged on the wiring in the vicinity of the magnetoresistive effect element can be efficiently applied.

Description

Technical Field

[0001] The present invention relates to magnetic sensors. Background Art

[0002] Patent document 1 discloses a magnetic sensor comprising: a substrate; a magnetosensitive component having a stacked portion arranged on the substrate, the stacked portion including a magnetization free layer whose magnetization changes according to an external magnetic field, a magnetization fixed layer that fixes the magnetization in a first direction, and a non-magnetic layer arranged between the magnetization free layer and the magnetization fixed layer, and outputting a signal corresponding to the external magnetic field; and a magnetic field generating portion, which applies a bias magnetic field to the magnetization free layer, wherein when the bias magnetic field is not applied to the magnetization free layer, the magnetization direction of the magnetization free layer is approximately parallel or approximately antiparallel to the first direction, and calculates the component of the second direction of the external magnetic field based on the output of the magnetosensitive component in a state where a first bias magnetic field including a positive component is applied to the magnetization free layer in a second direction perpendicular to the first direction when viewed from the top, i.e., a first output, and the output of the magnetosensitive component in a state where a second bias magnetic field including a negative component is applied to the magnetization free layer in the second direction, i.e., a second output.

[0003] In the invention disclosed in Patent Document 1, a specific example of a magnetic field generating unit is a wiring unit provided in the stacking direction of a stacking unit, and an induced magnetic field from the wiring unit which is energized is applied as a bias magnetic field to a magnetization free layer of the stacking unit. The external magnetic field is measured under the condition that the bias magnetic field is applied in different directions, and 1 / f noise is removed based on these measurement results.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-115972 Summary of the invention

[0007] Problems to be solved by the invention

[0008] When measuring an external magnetic field while receiving an induced magnetic field from wiring arranged near a magnetoresistance effect element, as in the magnetic sensor disclosed in Patent Document 1, it is sometimes difficult to increase the strength of the induced magnetic field by increasing the amount of current flowing through the wiring due to the small cross-sectional area of ​​the wiring and the difficulty in dissipating the Joule heat from the wiring due to the structure.

[0009] The present invention is based on the related situation, and an object of the present invention is to provide a magnetic sensor capable of efficiently applying an induced magnetic field of a wiring arranged near a magnetoresistive element.

[0010] Means for solving problems

[0011] A magnetic sensor according to one embodiment of the present invention for solving the above-mentioned problems is characterized in that it comprises: a magnetoresistance effect element having a fixed magnetic layer, a free magnetic layer, and an intermediate layer formed between the fixed magnetic layer and the free magnetic layer, and having a sensitivity axis in a first direction; a wiring located in a second direction along the stacking direction of the magnetoresistance effect element and intersecting the first direction, and having a first surface opposite to the magnetoresistance effect element; and a magnetically permeable portion provided on at least a portion of a surface other than the first surface of the wiring surface, containing a ferromagnetic material, and configuring the wiring so that an induced magnetic field generated when power is applied to the magnetoresistance effect element in the first direction.

[0012] The magnetically permeable portion functions as a magnetic flux collector that concentrates the induced magnetic field from the wiring, and can increase the intensity of the induced magnetic field applied to the magnetoresistance effect element.

[0013] In the above-mentioned magnetic sensor, it is sometimes preferable to provide an insulating layer between the wiring and the magnetically permeable portion. If the resistivity of the magnetically permeable portion is low, if the insulating layer is not provided, the amount of current flowing through the magnetically permeable portion increases, and as a result, the amount of current flowing through the wiring decreases relatively, thereby reducing the strength of the induced magnetic field.

[0014] When an insulating layer is provided, the insulating layer is preferably a diffusion suppression layer that suppresses mutual diffusion of elements constituting the wiring and elements constituting the magnetically permeable portion. When the insulating layer suppresses mutual diffusion of the wiring and the magnetically permeable portion, it is difficult for the composition of the wiring and / or the magnetically permeable portion to change over time, and thus the quality stability (functional stability) of the sensor becomes higher.

[0015] In the above-mentioned magnetic sensor, a magnetic gap may be provided in the magnetically permeable portion. The magnetically permeable portion may sometimes have a magnetic shielding function that prevents an external magnetic field from being applied to the magnetoresistance effect element. Even in such a case, since the magnetic resistance of the magnetically permeable portion is increased by providing the magnetic gap, it is easy to apply an external magnetic field to the magnetoresistance effect element.

[0016] When a magnetic gap is provided, it is preferred that the magnetic gap is provided on a second surface of the wiring surface that is opposite to the first surface, along a direction orthogonal to the first direction. Even if the external magnetic field is collected in the magnetically permeable portion, the magnetic resistance on the second surface side becomes higher, and therefore the external magnetic field can be efficiently guided to the first surface side (the side where the magnetoresistance effect element is provided).

[0017] In the above-mentioned magnetic sensor, a magnetically permeable portion may be provided on at least one of the side surfaces that are opposite in the first direction among the surfaces of the wiring. The magnetically permeable portion provided on the side surface functions as a magnetic collector that concentrates the induced magnetic field from the wiring, and also functions as a magnetic collector that concentrates the external magnetic field in the first direction. In particular, if the length of the magnetically permeable portion in the first direction becomes longer, the external magnetic field in the first direction is efficiently collected in the magnetically permeable portion, and therefore, the external magnetic field can be applied to the magnetoresistance effect element more strongly than when the magnetically permeable portion is not provided.

[0018] When the magnetically permeable portion is provided on at least a portion of the above-mentioned side surface, when the magnetically permeable portion does not extend to the second surface, the area on the second surface functions as a magnetic gap, thereby being able to efficiently guide the external magnetic field to the first surface side where the magnetoresistance effect element is arranged.

[0019] In the case where the magnetically permeable portion is not provided on at least a part of the above-mentioned side surface, the end portion of the magnetically permeable portion on the second direction side that is opposite to the magnetoresistance effect element may have a function of converting the component of the applied external magnetic field in the second direction into the first direction and applying it to the magnetoresistance effect element. In this case, the magnetic sensor has a function of detecting the external magnetic field in the second direction.

[0020] In the above-mentioned magnetic sensor, the wiring and the magnetoresistive element may be formed on the same substrate. When the wiring and the magnetoresistive element are formed on the same substrate, the wiring also becomes the same size as the magnetoresistive element, so it is not easy to increase the amount of current flowing through the wiring. Even in such a case, as long as there is a structure that enhances the induced magnetic field from the wiring like the above-mentioned magnetic sensor, the purpose of noise removal can be effectively achieved.

[0021] In this case, the first direction is one of the in-plane directions of the substrate, and the second direction is the thickness direction of the substrate, which is advantageous in terms of manufacturing.

[0022] Effects of the Invention

[0023] According to the present invention, there is provided a magnetic sensor capable of efficiently applying an induced magnetic field of a wiring arranged near a magnetoresistive element. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a circuit diagram of a magnetic sensor according to one embodiment of the present invention.

[0025] Figure 2 yes Figure 1 Cross-sectional view at line AA'.

[0026] Figure 3 This is a graph showing the relationship between the efficiency of the bias magnetic field and the width of the magnetically permeable portion as the results of Example 1.

[0027] Figure 4 This is a graph showing the relationship between the amplification factor of the external magnetic field and the width of the magnetically permeable portion as the result of Example 1.

[0028] Figure 5 It is a cross-sectional view illustrating the structure of the magnetic sensor involved in Example 2-1.

[0029] Figure 6 It is a cross-sectional view illustrating the structure of the magnetic sensor involved in Example 2-2.

[0030] Figure 7 It is a cross-sectional view for explaining the structure of the magnetic sensor involved in Example 2-3.

[0031] Fig. 8A It is a cross-sectional view for explaining the structure of the magnetic sensor involved in Example 2-6.

[0032] Figure 8B It is a cross-sectional view for explaining a modified example of the magnetic sensor involved in Example 2-6.

[0033] Fig. 9 This is a circuit diagram of the magnetic sensor involved in Example 2-7.

[0034] Fig. 10A yes Fig. 9 Cross-sectional view at line BB'.

[0035] Fig. 10B It is a cross-sectional view for explaining a modified example of the magnetic sensor involved in Example 2-7.

[0036] Fig.11 It is a cross-sectional view for explaining the structure of a magnetic sensor according to an example of a modification of one embodiment of the present invention.

[0037] Fig.12 It is a cross-sectional view for explaining the structure of a magnetic sensor according to another example of a modification of the embodiment of the present invention.

[0038] Fig.13 It is a cross-sectional view for explaining the structure of a magnetic sensor according to another example of a modification of the one embodiment of the present invention. DETAILED DESCRIPTION

[0039] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same reference numerals are given to the same components, and description of components that have been described previously will be omitted as appropriate.

[0040] Figure 1 This is a circuit diagram of a magnetic sensor according to one embodiment of the present invention. Figure 2 yes Figure 1The cross-sectional view at the A-A' line. Figure 1 As shown in FIG. 1 , a magnetic sensor 100 according to an embodiment of the present invention includes magnetoresistance effect elements 10a, 10b, 10c, and 10d (when not distinguishing these, it is appropriate to refer to the magnetoresistance effect element 10). The four magnetoresistance effect elements 10 may be provided on the same substrate (single chip). In this embodiment, the four magnetoresistance effect elements 10 are provided on the same substrate (not shown). Figure 1 is a diagram of the magnetic sensor 100 viewed from the laminated surface (surface) side of the substrate in the normal direction of the substrate. Figure 1 In the Z1-Z2 direction, the Z1 side is the front side of the substrate, and the Z2 side is the back side of the substrate. The Z1-Z2 direction is along the stacking direction of the magnetoresistive effect element 10.

[0041] The magnetic sensor 100 is a structure in which a first half-bridge circuit is formed by connecting in series a magnetoresistance effect element 10a and a magnetoresistance effect element 10b, both extending in the Y direction, and a second half-bridge circuit is formed by connecting in series a magnetoresistance effect element 10c and a magnetoresistance effect element 10d, both extending in the Y direction, in parallel between a power supply point, i.e., a power terminal Vdd, and a ground terminal GND.

[0042] The first half-bridge circuit includes an output terminal V1 between the magnetoresistance effect element 10a and the magnetoresistance effect element 10b. In addition, the second half-bridge circuit includes an output terminal V2 between the magnetoresistance effect element 10c and the magnetoresistance effect element 10d. The magnitude of the external magnetic field applied from the outside as the detection magnetic field H can be quantitatively measured by the potential difference (Va-Vb, midpoint potential difference) output from these two output terminals V1 and V2.

[0043] In the pair of magnetoresistive elements 10a and 10b forming the first half-bridge circuit, the magnetization direction of the fixed magnetic layer 11 is as follows: Figure 1 As shown by the hollow arrows, the X2 direction is in the X1-X2 direction and the X1-X2 direction is in the X1 direction. Figure 1 As indicated by hollow arrows, the magnetization directions of the fixed magnetic layer 11 are X1 - X2 direction (X1 orientation) and X1 - X2 direction (X2 orientation) in this order.

[0044] In the first half-bridge circuit and the second half-bridge circuit, the magnetization directions of the fixed magnetic layers 11 of the magnetoresistance effect elements 10a and 10c on the power supply terminal Vdd side are opposite (anti-parallel). In addition, the magnetization directions of the fixed magnetic layers 11 of the magnetoresistance effect elements 10b and 10d on the ground terminal GND side are opposite (anti-parallel). Therefore, the sensitivity axis direction of the magnetoresistance effect element 10 is the X1-X2 direction, which is also referred to as the "first direction" in this specification.

[0045] Furthermore, in the four magnetoresistive effect elements 10a to 10d, the magnetization directions (directions of the bias magnetic field) of the free magnetic layers 12 are equal when no external magnetic field is applied. Figure 1 As indicated by the black arrow in the middle, it is oriented along the Y1-Y2 direction.

[0046] According to the above structure, as the magnitude of the detection magnetic field H in the X1-X2 direction changes, the output from the output terminal V1 of the first half-bridge circuit and the output terminal V2 of the second half-bridge circuit change in opposite directions. Therefore, a large output can be obtained as the potential difference between the two output terminals V1 and V2. Therefore, the magnetic sensor 100 can detect the detection magnetic field H with high accuracy. In addition, the first or second half-bridge circuit and the magnetoresistive effect element 10 can be used instead of the full-bridge circuit.

[0047] like Figure 2 As shown in FIG. 1 , as the magnetoresistance effect element 10a, for example, a GMR element (giant magnetoresistance effect element) or a TMR element (tunneling magnetoresistance effect element) is used, and the magnetoresistance effect element 10a includes a fixed magnetic layer 11, a free magnetic layer 12, and an intermediate layer 13 formed between the fixed magnetic layer 11 and the free magnetic layer 12. The resistance value of the magnetoresistance effect element 10a changes according to the relative relationship between the fixed magnetic layer 11 whose magnetization direction is fixed and the free magnetic layer 12 whose magnetization direction changes according to the external magnetic field. The magnetic sensor 100 can measure the direction and strength of the measured external magnetic field based on the change in the resistance value of the magnetoresistance effect element 10a.

[0048] When the magnetoresistance effect element 10a is a GMR element, the fixed magnetic layer 11 is formed using a ferromagnetic layer such as a CoFe alloy (cobalt-iron alloy). The free magnetic layer 12 is formed using a soft magnetic material such as a CoFe alloy or a NiFe alloy (nickel-iron alloy) and is formed into a single-layer structure, a stacked structure, a laminated iron structure, etc. The intermediate layer 13 is a non-magnetic intermediate layer formed using a non-magnetic material such as Cu, for example.

[0049] In order to stabilize the output of the magnetic sensor 100, a bias magnetic field is applied to the free magnetic layer 12 in a direction perpendicular to the sensitivity axis direction (first direction). Figure 1 As shown, the direction of the bias magnetic field is the Y1-Y2 direction Y2. Thus, the magnetization direction of the soft magnetic material forming the free magnetic layer 12 can be made uniform in a state where no magnetic field is applied.

[0050] As described above, the fixed magnetic layer 11 of the magnetoresistive effect element 10a fixes the magnetization direction in the X1-X2 direction X2 orientation, and the magnetization direction of the free magnetic layer 12 when no magnetic field is applied becomes the Y1-Y2 direction Y2 orientation orthogonal to the magnetization direction of the fixed magnetic layer 11. Therefore, the resistance value of the magnetoresistive effect element 10a changes in the opposite direction depending on whether the direction of the detection magnetic field H is the X1 direction or the X2 direction in the X1-X2 direction. That is, since the resistance value becomes an odd function with respect to the detection magnetic field H in the X1-X2 direction, the direction and magnitude of the detection magnetic field H can be continuously measured.

[0051] As the magnetoresistance effect element 10a, a TMR element may be used instead of the above-mentioned GMR element. In this case, the intermediate layer 13 is an insulating barrier layer containing MgO, Al2O3, titanium oxide, or the like.

[0052] The magnetoresistance effect elements 10b to 10d have the same basic structure as the magnetoresistance effect element 10a. From the viewpoint of improving measurement accuracy, it is preferable that the magnetoresistance effect elements 10a to 10d are elements manufactured on the same substrate by a common manufacturing process.

[0053] like Figure 1 As shown, magnetic field generating unit MG1 is provided on the Z1-Z2 direction Z2 side of magnetoresistance effect elements 10a and 10b, and magnetic field generating unit MG2 is provided on the Z1-Z2 direction Z2 side of magnetoresistance effect elements 10c and 10d. In magnetic sensor 100, magnetic field generating unit MG1 and magnetic field generating unit MG2 have the same structure.

[0054] like Figure 2 As shown, the magnetic field generating unit MG1 is located on the Z2 side of the Z1-Z2 direction of the magnetoresistance effect element 10a, and has a wiring 20 extending in the Y1-Y2 direction. That is, the wiring 20 is located on the Z1-Z2 side of the magnetoresistance effect element 10a, which is a second direction intersecting the first direction (X1-X2 direction), and faces the magnetoresistance effect element 10a, and has a first surface 21 facing the Z1 side of the Z1-Z2 direction.

[0055] In the magnetic sensor 100 involved in the present embodiment, the wiring 20 is formed to be buried in a substrate not shown together with the magnetoresistance effect element 10a. The material constituting the wiring 20 is not particularly limited as long as it is a conductor, and is preferably a material based on non-magnetic elements such as copper and aluminum. In addition, the first direction is one of the in-plane directions of the substrate, and the second direction is the thickness direction of the substrate, which sometimes becomes advantageous in manufacturing. The separation distance between the wiring 20 and the magnetoresistance effect element 10a is set so that a given induced magnetic field from the wiring 20 is applied to the magnetoresistance effect element 10a. In the present embodiment, since the magnetoresistance effect element 10a is formed by a film forming process on the substrate in which the wiring 20 is buried, the separation distance is set to a micrometer level or a submicrometer level as an example.

[0056] By passing electricity through the wiring 20, an induced magnetic field along the sensitivity axis direction (first direction, X1-X2 direction) is applied to the free magnetic layer 12 of the magnetoresistance effect element 10a as a bias magnetic field. In the magnetic sensor 100 involved in this embodiment, the width (length in the X1-X2 direction) and height (length in the Z1-Z2 direction) of the wiring 20 are about several μm. Since it is buried in the substrate as described above, the amount of current that can flow through the wiring 20 is limited due to the heat dissipation efficiency of Joule heat. Therefore, there is a limit to increasing the amount of current flowing through the wiring 20 to enhance the induced magnetic field applied to the free magnetic layer 12. In particular, when a magnetic field with an intensity equivalent to the saturation magnetic field of the magnetoresistance effect element 10a is applied as a bias magnetic field, it is easy to make it obvious that the amount of current flowing through the wiring 20 actually has an upper limit as a subject.

[0057] Therefore, the magnetic field generating unit MG1 of the magnetic sensor 100 has a magnetically permeable portion 30 that is provided on at least a portion of the surface other than the first surface 21 of the wiring 20 and contains a ferromagnetic material. In the magnetic sensor 100 involved in this embodiment, since the cross-sectional shape of the wiring 20 at the XY plane is a rectangle, the surfaces other than the first surface 21 of the wiring 20 are the second surface 22 opposite to the first surface 21 in the second direction and the two surfaces (the third surface 23 and the fourth surface 24) opposite to each other in the first direction (X1-X2 direction). Figure 1 As shown, the magnetically permeable portion 30 is composed of a first magnetically permeable portion 31 provided on the third surface 23 among these surfaces, and a second magnetically permeable portion 32 provided on the fourth surface 24 .

[0058] The magnetically permeable portion 30 (the first magnetically permeable portion 31 and the second magnetically permeable portion 32) can collect the induced magnetic field from the wiring 20 and efficiently apply the bias magnetic field along the first direction (X1-X2 direction) to the free magnetic layer 12 of the magnetoresistance effect element 10a. In particular, even if the bias magnetic field is required to have the same strength as the saturation magnetic field of the magnetoresistance effect element 10a, in the magnetic sensor 100 involved in this embodiment, a magnetic field of appropriate strength can be applied by the induced magnetic field of the wiring 20.

[0059] The material of the magnetically permeable portion 30 is not particularly limited as long as it is a ferromagnetic material. Soft magnetic materials such as Permalloy are given as specific examples. The separation distance between the magnetically permeable portion 30 and the wiring 20 is not limited. For example, it can be a few μm in size, which is equivalent to the size (height, width) of the wiring 20.

[0060] The length (first direction length) of the magnetically permeable portion 30 (first magnetically permeable portion 31 and second magnetically permeable portion 32) in the first direction (X1-X2 direction) is appropriately set according to the strength of the bias magnetic field to be applied to the free magnetic layer 12. When the length in the first direction is too short, it is difficult for the magnetically permeable portion 30 to properly perform the magnetic collecting function of the induced magnetic field. In addition, when the length in the first direction is too long, the induced magnetic field is dispersed inside the magnetically permeable portion 30, so it is difficult to increase the strength of the induced magnetic field applied to the free magnetic layer 12 as a bias magnetic field along the first direction. On the other hand, the magnetically permeable portion 30 with a long length in the first direction sometimes functions effectively as a magnetic collector of the external magnetic field in the first direction. Therefore, it is preferable to set the length in the first direction from the perspective of what ratio the strength of the induced magnetic field applied to the free magnetic layer 12 and the strength of the external magnetic field are set to.

[0061] The magnetic field generating unit MG1 of the magnetic sensor 100 according to the present embodiment includes an insulating layer 40 between the wiring 20 and the magnetically permeable portion 30. When the magnetically permeable portion 30 includes a metallic material such as Permalloy, since the resistivity thereof is relatively low, if the insulating layer 40 is not provided, current will also flow through the magnetically permeable portion 30 when power is applied, and as a result, the amount of current flowing through the wiring 20 is relatively reduced, and the strength of the induced magnetic field from the wiring 20 is reduced.

[0062] The insulating layer 40 may be made of any material and any thickness as long as it can prevent the current flowing through the wiring 20 from flowing to the magnetically permeable portion 30. The insulating layer 40 is preferably a diffusion suppression layer that suppresses the mutual diffusion of the elements constituting the wiring 20 and the elements constituting the magnetically permeable portion 30. When the insulating layer 40 suppresses the mutual diffusion of the wiring 20 and the magnetically permeable portion 30, since the composition of the two is unlikely to change over time, the quality stability (functional stability) of the magnetic sensor 100 becomes higher. From the perspective of being a diffusion suppression layer, specific examples of the constituent materials of the insulating layer 40 include oxide-based materials such as silicon oxide (SiO2) and aluminum oxide (Al2O3), and nitride-based materials such as silicon nitride (Si3N4) and aluminum nitride (AlN), and the thickness thereof is sometimes preferably 50 nm or more.

[0063] The embodiments described above are described to facilitate understanding of the present invention, and are not described to limit the present invention. Therefore, the elements disclosed in the embodiments described above are intended to include all design changes and equivalents that fall within the technical scope of the present invention.

[0064] Example

[0065] Hereinafter, the present invention will be further described in detail using examples based on simulations, but the present invention is not limited thereto. The magnetic sensor involved in the example has a common circuit structure (full-bridge circuit) with the magnetic sensor 100 involved in the aforementioned embodiment, and has four magnetoresistance effect elements 10a to 10d. The difference between the examples is the structure of the magnetic field generating units MG1 and MG2. Therefore, in the following examples (except for examples 2-7), the same cross-sectional view as the cross-sectional view at the A-A' line of the magnetic sensor 100 is shown while explaining its structure.

[0066] (Example 1)

[0067] The magnetic sensor 100 according to the first embodiment has Figure 2 The cross-sectional structure shown in FIG. That is, the magnetic field generating unit MG1 is located on the Z2 side of the magnetoresistance effect element 10a in the Z1-Z2 direction, and has a wiring 20 extending in the Y1-Y2 direction. The first magnetically permeable portion 31 and the second magnetically permeable portion 32 are provided on the third surface 23 and the fourth surface 24 of the wiring 20 that are opposite in the first direction (X1-X2 direction), and the magnetically permeable portion 30 is not provided on the first surface 21 opposite to the magnetoresistance effect element 10a and the second surface 22 opposite to the first surface 21. An insulating layer 40 is provided between the first magnetically permeable portion 31 and the second magnetically permeable portion 32 and the wiring 20.

[0068] In Example 1, the length of the magnetoresistance effect element 10a in the X1-X2 direction (element width Ws) is 1.0 μm. The length in the Y1-Y2 direction (element length) is 64 μm. The length of the wiring 20 in the X1-X2 direction (wiring width Wp) is 2.0 μm, the length in the Z1-Z2 direction (wiring height Hp) is 1.5 μm, and the length in the Y1-Y2 direction (wiring length) is 80 μm. The separation distance between the magnetoresistance effect element 10a and the wiring 20 is 0.25 μm, and the thickness of the insulating layer 40 is 0.5 μm.

[0069] The length of the first magnetically permeable portion 31 and the second magnetically permeable portion 32 in the Y1-Y2 direction (magnetically permeable portion length) is 80 μm, which is equal to the wiring length, and the length of the first magnetically permeable portion 31 in the X1-X2 direction (first magnetically permeable portion width Wm1) and the length of the second magnetically permeable portion 32 in the X1-X2 direction (second magnetically permeable portion width Wm2) are equal in length and vary within the range of 0.2 μm to 16 μm. Hereinafter, the width of these magnetically permeable portions will be abbreviated as “magnetically permeable portion width”.

[0070] The current flowing through the wiring 20 is 1 mA, and the intensity of the external magnetic field applied in the first direction (X1-X2 direction) is 1 mT.

[0071] Under the above conditions, the efficiency of the bias magnetic field applied to the magnetoresistive element 10a as a saturation magnetic field (bias magnetic field based on the induced magnetic field / current value, unit: mT / mA) and the amplification factor of the external magnetic field (detected magnetic field H / applied external magnetic field, unit: mT / mT) were simulated, and the results are shown in Tables 1 and Figure 3 as well as Figure 4 Shown in.

[0072] [Table 1]

[0073]

[0074] like Figure 3 As shown, the relationship between the efficiency of the bias magnetic field and the width of the magnetically permeable portion (the first magnetically permeable portion width Wm1, the second magnetically permeable portion width Wm2) can obtain a result with a maximum value at a magnetically permeable portion width of about 2μm. Until the width of the magnetically permeable portion is about 2μm, by providing the magnetically permeable portion 30, the induced magnetic field from the wiring 20 is efficiently collected in the magnetically permeable portion 30, and the collected magnetic field is applied to the magnetoresistance effect element 10a, thereby improving the efficiency of the bias magnetic field. On the other hand, if the width of the magnetically permeable portion is greater than about 2μm, the efficiency of the bias magnetic field decreases, and when the width of the magnetically permeable portion is greater than 15μm, it is equivalent to the case where the magnetically permeable portion 30 is not provided (Example 2-1 described later). It is believed that this is because if the width of the magnetically permeable portion becomes excessively large, the induced magnetic field inside the magnetically permeable portion 30 is dispersed, and the magnetic collecting function of the magnetically permeable portion 30 is reduced.

[0075] On the other hand, Figure 4 As shown in FIG. 1 , the relationship between the magnification of the external magnetic field and the width of the magnetically permeable portion is approximately linear. That is, the magnetically permeable portion 30 (the first magnetically permeable portion 31 and the second magnetically permeable portion 32) involved in Example 1 has the function of collecting the external magnetic field in the first direction and applying it to the magnetoresistance effect element 10a. It is confirmed that the larger the width of the magnetically permeable portion, the stronger this function. In addition, Figure 4 In the graph shown, since the magnification becomes 1 when the width of the magnetically permeable portion is 1 μm, it is also confirmed that in the magnetically permeable portion 30 (the first magnetically permeable portion 31 and the second magnetically permeable portion 32) involved in Example 1, if the width of the magnetically permeable portion is greater than 1 μm, the shielding function of shielding the external magnetic field in the first direction from being applied to the magnetoresistance effect element 10a is not obvious.

[0076] (Example 2)

[0077] In Example 1, the effect of the magnetically permeable portion width on the efficiency of the bias magnetic field and the amplification factor of the external magnetic field was evaluated, but in this example, the effect of further changing the shape of the magnetically permeable portion 30 was evaluated. A plurality of magnetic field generating portions MG1 having different shapes of the magnetically permeable portion 30 were simulated.

[0078] (Example 2-1)

[0079] like Figure 5 As shown, in the magnetic field generating unit MG1 involved in Example 2-1, the first magnetically permeable portion width Wm1 and the second magnetically permeable portion width Wm2 are both 0 μm, and no insulating layer 40 is provided. The shape of the wiring 20 is the same as that of Example 1 (wiring width Wp: 2.0 μm, wiring height Hp: 1.5 μm, wiring length: 64 μm), and the separation distance between the magnetoresistance effect element 10a and the wiring 20 is also the same as that of Example 1 (0.25 μm). The direction of application of the external magnetic field is the first direction (X1-X2 direction).

[0080] (Example 2-2)

[0081] like Figure 6 As shown, the magnetic field generating unit MG1 involved in Example 2-2 is provided with a magnetically permeable portion 30 with a thickness of 0.5 μm on the second surface 22, the third surface 23, and the fourth surface 24 of the wiring 20 of the same shape as that of Example 1. That is, the magnetically permeable portion 30 of the magnetic field generating unit MG1 involved in Example 2-2 has a first magnetically permeable portion 31 with a first magnetically permeable portion width Wm1 of 0.5 μm, a second magnetically permeable portion 32 with a second magnetically permeable portion width Wm2 of 0.5 μm, and a third magnetically permeable portion 33 with a magnetically permeable portion height Hm of 0.5 μm, and has a U-shaped cross-sectional shape as a whole. The direction of application of the external magnetic field is the first direction (X1-X2 direction).

[0082] (Example 2-3)

[0083] like Figure 7 As shown, the magnetic field generating unit MG1 according to Example 2-3 has the same structure as Example 2-2, and includes an insulating layer 40 with a thickness of 0.1 μm between the wiring 20 and the magnetically permeable portion 30. The direction of applying the external magnetic field is the first direction (X1-X2 direction).

[0084] (Example 2-4)

[0085] The magnetic field generating unit MG1 according to the embodiment 2-4 has Figure 2 In the structure shown, the width of the first magnetically permeable portion 31 (first magnetically permeable portion width Wm1) and the width of the second magnetically permeable portion 32 (second magnetically permeable portion width Wm2) are both 0.5 μm. The direction of application of the external magnetic field is the first direction (X1-X2 direction).

[0086] (Example 2-5)

[0087] The magnetic field generating unit MG1 according to the embodiment 2-5 has Figure 2 In the structure shown, the width of the first magnetically permeable portion 31 (first magnetically permeable portion width Wm1) and the width of the second magnetically permeable portion 32 (second magnetically permeable portion width Wm2) are both 16 μm. The direction of application of the external magnetic field is the first direction (X1-X2 direction).

[0088] (Example 2-6)

[0089] like Fig. 8A As shown, the magnetic field generating portion MG1 involved in Example 2-6 is provided on the third surface 23 and the fourth surface 24 of the wiring 20 having the same shape as that of Example 1. As in Example 2-5, the first magnetically permeable portion 31 having a first magnetically permeable portion width Wm1 of 16 μm is provided on the third surface 23, and the second magnetically permeable portion 32 having a second magnetically permeable portion width Wm2 of 16 μm is provided on the fourth surface 24. In Example 2-6, the first magnetically permeable portion 31 has a first protruding portion 331 protruding onto the second surface 22 of the wiring 20, and its protruding width We1 is 0.6 μm. In addition, the second magnetically permeable portion 32 also has a second protruding portion 332 protruding onto the second surface 22 of the wiring 20, and its protruding width We2 is 0.6 μm. In other words, the magnetic field generating portion MG1 involved in Example 2-6 has a third magnetically permeable portion 33 having a magnetic gap G having a width (gap width Wg) of 1.0 μm on the second surface 22 of the wiring 20. The direction of application of the external magnetic field is the first direction (X1-X2 direction).

[0090] (Example 2-7)

[0091] The magnetic sensor 101 according to the embodiment 2-7 is different from the magnetic sensor 100 according to the other embodiments in that it is used to measure the external magnetic field in the second direction (Z1-Z2 direction). Fig. 9As shown, its circuit structure is similar to Figure 1 Similarly, in the magnetic sensor 100 shown, the direction (sensitivity axis direction) of the detection magnetic field H of the four magnetoresistance effect elements 10a to 10d is along the first direction (X1-X2 direction). A magnetic field generating unit MG is provided on the second direction (Z1-Z2 direction) Z2 side of the four magnetoresistance effect elements 10a to 10d. The arrangement pitch P of the magnetoresistance effect element 10a and the magnetoresistance effect element 10c adjacently arranged in the first direction (X1-X2 direction) is 12.2 μm.

[0092] Fig. 10A yes Fig. 9 The cross-sectional view at the BB' line. Fig. 10A As shown, a wiring 202 having a first surface 212 opposite to the magnetoresistance effect element 10a is provided on the Z2 side of the second direction (Z1-Z2 direction) of the magnetoresistance effect element 10a, and a wiring 201 having a first surface 211 opposite to the magnetoresistance effect element 10c is provided on the Z2 side of the second direction (Z1-Z2 direction) of the magnetoresistance effect element 10c.

[0093] An insulating layer 40 is provided on the second surface 221 and the fourth surface 241 of the wiring 201 and the second surface 222 and the third surface 232 of the wiring 202, and these insulating layers 40 form a continuous body. A magnetically permeable portion 30 is provided between the wiring 201 and the wiring 202 in the first direction (X1-X2 direction) to fill the gap, and the magnetically permeable portion width Wm is 10μm. In addition, the magnetically permeable portion 30 is also provided on the Z2 side of the second direction (Z1-Z2 direction) of each of the wiring 201 and the wiring 202, and the length of the second direction (Z1-Z2 direction) from the second surface 221, 222 (magnetically permeable portion height Hm) is 10μm.

[0094] The same simulation as in Example 1 was performed on each example to obtain the efficiency of the bias magnetic field and the amplification factor of the external magnetic field. The results are shown in Table 2.

[0095] [Table 2]

[0096]

[0097] As shown in Table 2, when the magnetically permeable portion 30 is provided to cover other than the first surface 21 (Example 2-2), compared with the case where the magnetically permeable portion 30 is not provided (Example 2-1), the bias magnetic field is significantly increased (2.8 times), but the detection magnetic field H is attenuated (0.22 times). When the insulating layer 40 is provided between the magnetically permeable portion 30 and the wiring 20 (Example 2-3), the same result as that of Example 2-2 can be obtained.

[0098] In the magnetic field generating unit MG1 of Example 2-2 and Example 2-3, it is considered that since the magnetic permeable portion 30 is provided to cover the second surface 22, the third surface 23, and the fourth surface 24, the induced magnetic field of the wiring 20 is more efficiently collected by the magnetic permeable portion 30 and applied to the magnetoresistance effect element 10a. On the other hand, in the magnetic field generating unit MG1 of these examples, since the magnetic permeable portion 30 having a U-shaped cross-sectional shape is provided, the external magnetic field in the first direction (X1-X2 direction) is collected on one side of the magnetic permeable portion 30 (for example, the first magnetic permeable portion 31), and the collected magnetic flux passes through the third magnetic permeable portion 33 and flows to the other side of the magnetic permeable portion 30 (the second magnetic permeable portion 32). Therefore, it is considered that the intensity of the detection magnetic field H detected by the magnetoresistance effect element 10a is reduced. That is, in the magnetic field generating unit MG1 of Example 2-2 and the magnetic field generating unit MG1 of Example 2-3, the result of the shielding function of the external magnetic field being significantly enhanced can be obtained.

[0099] In the case where the magnetically permeable portion 30 is not provided on the second surface 22 (Example 2-4), compared with Example 2-3, the bias magnetic field is attenuated (about 1 / 2), but the degree of attenuation of the detection magnetic field H is reduced to 90% of the case where the magnetically permeable portion 30 is not provided (Example 2-1). In the magnetic field generating unit MG1 of Example 2-4, there is no magnetically permeable portion 30 on the second surface 22, that is, since the magnetic field generating unit MG1 of Example 2-4 does not have the third magnetically permeable portion 33 compared with the magnetic field generating unit MG1 of Example 2-3, the induced magnetic field around the Y1-Y2 direction of the wiring 20 is less likely to be collected by the magnetically permeable portion 30 than the magnetic field generating unit MG1 of Example 2-3. Therefore, it is considered that the intensity of the bias magnetic field is relatively reduced.

[0100] On the other hand, since the magnetic field generating unit MG1 of the embodiment 2-4 does not have the third magnetically permeable portion 33 compared to the magnetic field generating unit MG1 of the embodiment 2-3, the magnetic flux of the external magnetic field collected at one side of the magnetically permeable portion 30 (for example, the first magnetically permeable portion 31) does not substantially differ when passing through the first surface 21 side and passing through the second surface 22 side when going to the other side of the magnetically permeable portion 30 (the second magnetically permeable portion 32). Therefore, compared with the magnetic field generating unit MG1 of the embodiment 2-3 in which the third magnetically permeable portion 33 exists and passing through the second surface 22 side is more advantageous, the magnetic flux passing through the first surface 21 side increases, and as a result, it is considered that the intensity of the detection magnetic field H in the magnetoresistance effect element 10a increases.

[0101] The magnetic field generating unit MG1 of Example 2-5 is compared with the magnetic field generating unit MG1 of Example 2-4, and the width of the first magnetically permeable portion 31 (first magnetically permeable portion width Wm1) and the width of the second magnetically permeable portion 32 (second magnetically permeable portion width Wm2) are larger. In this case, it is confirmed that the amplification factor of the external magnetic field is larger than that of Example 1, and in Example 2-5, the amplification factor of the external magnetic field is larger than that of Example 2-4 (about 3.8 times).

[0102] In the magnetic field generating unit MG1 of Example 2-6, compared with the magnetic field generating unit MG1 of Example 2-5, the magnetic permeable portion 30 extends toward the second surface 22 side (first extending portion 331, second extending portion 332). These extending portions correspond to the third magnetic permeable portion 33 having a magnetic gap G on the second surface 22, wherein the magnetic gap G has a width Wg of 1.0 μm. In the magnetic field generating unit MG1 of Example 2-6, due to the presence of the magnetic gap G, the following result can be obtained: although the efficiency of the bias magnetic field is lower than the case where the magnetic gap G is not provided in the third magnetic permeable portion 33 (Example 2-3, 0.45 mT / mA), it is higher than the case where the third magnetic permeable portion 33 is not provided on the second surface 22 (Example 2-4, Example 2-5, 0.22 mT / mA), in other words, the case where the magnetic gap G with a width Wg of 2.0 μm is provided on the second surface 22 side (0.27 mT / mA). On the other hand, the following results can be obtained: although the amplification factor of the external magnetic field is higher than the case where the magnetic gap G is not provided in the third magnetically permeable portion 33 (Example 2-3, 0.22 mT / mT), it is lower (2.28 mT / mT) than the case where the third magnetically permeable portion 33 is not provided on the second surface 22 (Example 2-4, Example 2-5, 3.39 mT / mT).

[0103] In the magnetic field generating unit MG of the embodiment 2-7, since the magnetic permeable portion 30 is provided on one of the surfaces facing each other in the first direction (the fourth surface 241 in the wiring 201 and the third surface 232 in the wiring 202) and the second surface 221 or the second surface 222, the induced magnetic field of the wirings 201 and 202 is appropriately collected and the efficiency of the bias magnetic field is equivalent to that of the case of the embodiment 2-6. The embodiment 2-7 is different from the other embodiments and has a structure for detecting the external magnetic field in the second direction (Z1-Z2 direction). Specifically, the magnetoresistance effect element 10a and the magnetoresistance effect element 10c having a sensitivity axis in the first direction can be used to detect the component of the magnetic flux of the external magnetic field passing through the magnetic permeable portion 30 to the Z1 side of the Z1-Z2 direction, which changes its direction to the first direction (X1-X2 direction) when it is released at the end of the magnetic permeable portion 30 on the Z1 side of the second direction (Z1-Z2 direction). Therefore, regarding the amplification factor of the external magnetic field, the following result can be obtained: the external magnetic field in a direction orthogonal to the sensitivity axis direction (first direction) of the magnetoresistance effect element 10a and the magnetoresistance effect element 10c can be detected with an intensity (approximately 80%) that cannot be compared with other embodiments but is not much different from the case where the magnetically permeable portion 30 is not provided (Example 2-1).

[0104] Modifications of the magnetic sensor according to the present embodiment will be described below. Fig.11 It is a diagram showing an example of a modification of the magnetic sensor according to the present embodiment. Fig.11 and Figure 2 Likewise, each of them is a cross-sectional view including a cross section of one magnetoresistance effect element 10a and the magnetic field generating unit MG1 corresponding thereto. Fig.11 As shown in FIG. 1 , the magnetic sensor 102 according to the modification example is Figure 1 In contrast to the magnetic sensor 100 shown in FIG. 1 , a wiring 20A having the same shape as the wiring 20 is provided on the Z1 side of the magnetoresistive element 10a in the Z1-Z2 direction (second direction). The wiring 20 and the wiring 20A apply an induced magnetic field in the same direction to the free magnetic layer 12 of the magnetoresistive element 10a by passing current in opposite directions. Fig.11 In the embodiment, a current flows through the wiring 20 on the Y1 side in the Y1-Y2 direction, and a current flows through the wiring 20A on the Y2 side in the Y1-Y2 direction, so that an induced magnetic field is applied to the free magnetic layer 12 of the magnetoresistance effect element 10a in the X2 direction in the X1-X2 direction. This direction is equal to the magnetization direction of the fixed magnetic layer 11 of the magnetoresistance effect element 10a.

[0105] Fig.12 It is a diagram showing another example of a modification of the magnetic sensor according to the present embodiment. Fig.12 and Figure 2Similarly, each of them is a cross-sectional view of a cross section including one magnetoresistance effect element 10a and a magnetic field generating unit MG1 corresponding thereto. In the magnetic sensor 103 involved in this example, the magnetoresistance effect element 10a has three magnetoresistance effect elements 10a1, 10a2, and 10a3, and these are all magnetized in the same direction (X1-X2 direction, X2 direction) (hollow arrows) with the fixed magnetic layer 11.

[0106] A magnetic field generating unit MG0 having the same structure as the magnetic field generating unit MG1 of Example 2-4 is provided on both sides of each of the magnetoresistance effect element 10a1, the magnetoresistance effect element 10a2, and the magnetoresistance effect element 10a3 in the second direction (Z1-Z2 direction). Therefore, in the magnetic sensor 103 involved in this example, the magnetic field generating unit MG1 has six magnetic field generating units MG0. The wiring 20 of the three magnetic field generating units MG0 provided on the Z1 side of the second direction (Z1-Z2 direction) is arranged along the first direction (X1-X2 direction) to form a parallel coil, and current flows through each of them on the Y2 side of the Y1-Y2 direction. The wiring 20 of the three magnetic field generating units MG0 provided on the Z2 side of the second direction (Z1-Z2 direction) is also arranged along the first direction (X1-X2 direction) to form a parallel coil, and current flows through each of them on the Y1 side of the Y1-Y2 direction. Thus, the induced magnetic field of the wiring 20 is applied to each of the three magnetoresistive effect elements 10 a 1 , 10 a 2 , and 10 a 3 in the direction along the magnetization direction of the fixed magnetic layer 11 .

[0107] Fig.13 It is a diagram showing another example of a modification of the magnetic sensor according to the present embodiment. Fig.13 and Figure 2 This is also a cross-sectional view of a cross section including one magnetoresistance effect element 10a and a magnetic field generating unit MG1 corresponding thereto. In the magnetic sensor 104 involved in this example, similarly to the magnetic sensor 103, the magnetoresistance effect element 10a has three magnetoresistance effect elements 10a1, 10a2, and 10a3, all of which have the fixed magnetic layer 11 magnetized in the same direction (X1-X2 direction, X2 direction) (hollow arrows).

[0108] On both sides of the magnetoresistance effect element 10a1, the magnetoresistance effect element 10a2, and the magnetoresistance effect element 10a3 in the second direction (Z1-Z2 direction), three wirings 201, 202, and 203 separated from each other by the insulating layer 40 are arranged side by side in the first direction (X1-X2 direction), and the magnetic field generating part MG0 having the magnetic permeable part 30 is arranged around them. The wiring 201 has a first surface 21 facing the magnetoresistance effect element 10a1 in the second direction, the wiring 202 has a first surface 21 facing the magnetoresistance effect element 10a2 in the second direction, and the wiring 203 has a first surface 21 facing the magnetoresistance effect element 10a3 in the second direction.

[0109] The magnetic permeable portion 30 of any magnetic field generating unit MG0 is not provided on the first surface 21 of the wirings 201, 202, and 203, and a magnetic gap G is provided on the second surface 22 side of the wiring 202. In the wirings 201, 202, and 203 of the magnetic field generating unit MG0 provided on the Z1 side of the second direction (Z1-Z2 direction), a current flows on the Y2 side of the Y1-Y2 direction. In the wirings 201, 202, and 203 of the magnetic field generating unit MG0 provided on the Z2 side of the second direction (Z1-Z2 direction), a current flows on the Y1 side of the Y1-Y2 direction. Thus, the induced magnetic field of the wiring 20 is applied to any of the three magnetoresistance effect elements 10a1, 10a2, and 10a3 in the direction along the magnetization direction of the fixed magnetic layer 11.

[0110] Figure 8B It is a cross-sectional view for explaining a modified example of the magnetic sensor involved in Example 2-6. Fig. 10B 2 is a cross-sectional view illustrating a modified example of the magnetic sensor involved in Example 2-7. Fig. 8A as well as Fig. 10A In the embodiment, the magnetoresistance effect element 10a is located in the magnetic field generating unit MG1 ( Fig. 8A ) or magnetic field generating unit MG ( Fig. 10A ) is located closer to the surface side of the substrate (Z1 side in the Z1-Z2 direction), but the arrangement relationship between the magnetoresistance effect element 10a and the magnetic field generating unit MG1 (magnetic field generating unit MG) is not limited to this. Figure 8B The magnetic sensor 100A shown, Fig. 10B As shown in the magnetic sensor 101A, it is sometimes preferred that the magnetic field generating unit MG1 (magnetic field generating unit MG) is located closer to the surface side of the substrate (Z1 side in the Z1-Z2 direction) than the magnetoresistive effect element 10a from the viewpoint of ease of manufacturing. In the magnetic sensor 100A and the magnetic sensor 101A, the first magnetically permeable portion 31, the second magnetically permeable portion 32, the third magnetically permeable portion 33, and the magnetically permeable portion 30 are formed by a plating process.

[0111] Explanation of symbols

[0112] 100, 100A, 101, 101A, 102, 103, 104: Magnetic sensor

[0113] 10, 10a, 10a1, 10a2, 10a3, 10b, 10c, 10d: magnetoresistance effect element

[0114] 11: Fixed magnetic layer

[0115] 12: Free magnetic layer

[0116] 13: Middle layer

[0117] 20: Wiring

[0118] 20A: Wiring

[0119] 21, 211, 212: Page 1

[0120] 22, 221, 222: Page 2

[0121] 23, 232: Page 3

[0122] 24, 241: Page 4

[0123] 30: Magnetic permeability

[0124] 31: 1st magnetically permeable part

[0125] 32: Second magnetically permeable part

[0126] 33: The third magnetically permeable part

[0127] 40: Insulation layer

[0128] 201, 202, 203: Wiring

[0129] 331: 1st extension

[0130] 332: Second extension

[0131] G: Magnetic gap

[0132] GND: Ground terminal

[0133] H: Detection of magnetic field

[0134] Hm: Height of magnetically permeable part

[0135] Hp: wiring height

[0136] MG, MG0, MG1, MG2: Magnetic field generating unit

[0137] P: Arrangement spacing

[0138] V1, V2: output terminals

[0139] Vdd: power supply terminal

[0140] We1, We2: extension width

[0141] Wm: Width of magnetically permeable part

[0142] Wm1: Width of the first magnetically permeable portion

[0143] Wm2: Width of the second magnetically permeable portion

[0144] Wp: Width of wiring

[0145] Ws: Component width

[0146] Wg: gap width.

Claims

1. A magnetic sensor, characterized in that: have: A magnetoresistive element having a fixed magnetic layer, a free magnetic layer, and an intermediate layer formed between the fixed magnetic layer and the free magnetic layer, and having a sensitivity axis in a first direction; a wiring line located in a second direction that is along the stacking direction of the magnetoresistance effect element and intersects the first direction, and having a first surface that faces the magnetoresistance effect element; and a magnetically permeable portion, at least a portion of which is provided on a surface other than the first surface among the surfaces of the wiring and contains a ferromagnetic material; The wiring is arranged so that an induced magnetic field generated when current is supplied to the magnetoresistive element is applied in the first direction.

2. The magnetic sensor according to claim 1, wherein: An insulating layer is provided between the wiring and the magnetically permeable portion.

3. The magnetic sensor according to claim 2, wherein: The insulating layer is a diffusion suppression layer that suppresses mutual diffusion between an element constituting the wiring and an element constituting the magnetically permeable portion.

4. The magnetic sensor according to claim 1, wherein: The magnetically permeable portion is provided with a magnetic gap.

5. The magnetic sensor according to claim 4, wherein: The magnetic gap is provided along a direction orthogonal to the first direction on a second surface of the wiring surface that faces the first surface.

6. The magnetic sensor according to claim 1, wherein: The magnetically permeable portion is provided on at least one of the side surfaces that are surfaces of the wiring that are opposed in the first direction.

7. The magnetic sensor according to claim 6, wherein: The magnetically permeable portion does not extend onto a second surface, which is opposite to the first surface, among surfaces of the wiring.

8. The magnetic sensor according to claim 7, wherein: Among the ends of the magnetically permeable portion on the second direction side, the end facing the magnetoresistance effect element converts the component of the applied external magnetic field in the second direction into the first direction and applies the component to the magnetoresistance effect element.

9. The magnetic sensor according to claim 1, wherein: The wiring and the magnetoresistive effect element are formed on the same substrate.

10. The magnetic sensor according to claim 9, wherein: The first direction is one of the in-plane directions of the substrate, and the second direction is a thickness direction of the substrate.

Images