Jet jet cooling fin for high-power semiconductor device

Abstract

A jet cooling assembly (102) for a semiconductor device (124, 125) may include a heat exchange base (102) having an inlet chamber (112) and an outlet chamber (126), an inlet connection (1704, 1804, 2004) in fluid connection with the inlet chamber (112), and an outlet connection (1706, 1806, 2106) in fluid connection with the outlet chamber (126). A plurality of jet nozzles (110) may be attached to the semiconductor module (122), where the plurality of jet nozzles (110) include corresponding openings (110) positioned such that a fluid flow (114) from the inlet chamber (112) is jetted onto the semiconductor module (122) and then into the outlet chamber (126).

Description

Technical Field

[0001] This specification relates to cooling techniques for semiconductor devices. Background Art

[0002] High power semiconductor devices generate heat during operation, which can be harmful to the device itself or nearby components. For example, excessive heat can cause sudden device failure, or can cause a shortened device life.

[0003] Conventional cooling techniques for high-power semiconductor devices include the use of thermal interface materials (TIMs) between the device and one or more heat sinks. However, the thermal conductivity of such TIMs may not be sufficient for many use cases.

[0004] In other conventional ways, a liquid cooling system can be used to cool high-power semiconductor devices. For example, a pump can be used to direct a flow of water or other suitable cooling liquid to a high-heat area, thereby facilitating heat transfer from the high-heat area to the cooling liquid.

[0005] For example, in a jet spray cooling system, a jet nozzle can be used to direct cooling liquid directly onto the surface of a high-power semiconductor device being cooled. However, such a jet nozzle may use a very narrow diameter to generate sufficient jet velocity and pressure, causing the jet nozzle to be easily clogged. In addition, such conventional jet spray cooling systems tend to introduce large and unnecessary pressure drops into the overall liquid cooling system. Although the nozzle diameter can be increased to reduce clogging and pressure drops, doing so usually reduces the heat dissipation performance of the cooling system. Summary of the invention

[0006] According to one general aspect, a jet spray cooling assembly for a semiconductor device may include a heat exchange base having an inlet chamber and an outlet chamber, an inlet connection portion fluidly connected to the inlet chamber, and an outlet connection portion fluidly connected to the outlet chamber. The jet spray cooling assembly for a semiconductor device may include a plurality of jet nozzles attached to a semiconductor module, the plurality of jet nozzles including corresponding openings positioned such that a fluid stream jet from the inlet chamber is sprayed onto the semiconductor module and then enters the outlet chamber.

[0007] According to another general aspect, a jet-jet heat sink for jet-jet cooling of at least one semiconductor device may include a jet plate and a plurality of jet nozzles, the jet plate being configured to be received within a heat exchange base, the plurality of jet nozzles being attached to the jet plate and to the at least one semiconductor device. The jet plate and the plurality of jet nozzles, when received within the heat exchange base, may define a fluid flow from an inlet chamber of the heat exchange base through the plurality of jet nozzles and onto the at least one semiconductor device, and then to an outlet chamber of the heat exchange base.

[0008] According to another general aspect, a method of manufacturing a jet ejecting heat sink for a semiconductor device may include attaching a jet plate to a plurality of jet nozzles, and attaching the jet plate and the plurality of jet nozzles to at least one semiconductor device.

[0009] The details of one or more implementations are set forth in the accompanying drawings and the description that follows. Other features will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a cross-sectional view of a jet-jet heat sink for high-power semiconductor devices.

[0011] Figure 2 is a flow chart illustrating an exemplary manufacturing process for manufacturing a jet spray cooling assembly according to exemplary embodiments described herein.

[0012] Figure 3 Shows Figure 1 Top view, front view, and cross-sectional views of an exemplary embodiment of a jet-jet heat sink for a high power semiconductor device.

[0013] Figure 4 shows the attachment to the semiconductor power module Figure 3 A cross-sectional view of an embodiment of the present invention.

[0014] Figure 5 yes Figure 3 An exploded view of an embodiment of the invention is shown, illustrating an exemplary heat exchange base.

[0015] Fig. 6A Shows Figure 3 Top view of an exemplary fluid velocity profile of an embodiment of .

[0016] Figure 6B Shows Fig. 6A Front view of an exemplary fluid velocity profile.

[0017] Figure 7 Shows Figure 1 A top view, a perspective front view, and a cross-sectional view of a second exemplary embodiment of a jet-ejected heat sink for a high power semiconductor device.

[0018] Figure 8 Shows Figure 7 An embodiment of the present invention and a corresponding exploded view of multiple high-power semiconductor devices to be cooled.

[0019] Fig. 9 yes Figure 7 An exploded view of an embodiment of the invention is shown, illustrating an exemplary heat exchange base.

[0020] Fig. 10A Shows Figure 7 Top view of an exemplary fluid velocity profile of an embodiment of .

[0021] Fig. 10B Shows Fig. 10A Front view of an exemplary fluid velocity profile.

[0022] Fig.11 Shows Figure 1 An isometric view of a third exemplary embodiment of a jet-jet heat sink for a high power semiconductor device.

[0023] Fig.12 Shows Fig.11 Bottom view, perspective front view and cross-sectional view of a third exemplary embodiment of a jet ejection heat sink for a high power semiconductor device.

[0024] Fig.13 shows the attachment to multiple high power semiconductor devices Fig.11 A cross-sectional view of an embodiment of the present invention.

[0025] Fig.14 yes Fig.11 An exploded view of an embodiment of the invention is shown, illustrating an exemplary heat exchange base.

[0026] Fig.15A Shows Fig.11 Top view of an exemplary fluid velocity profile of an embodiment of .

[0027] Fig. 15B Shows Fig.15A Front view of an exemplary fluid velocity profile.

[0028] Fig.16 Shows that Figures 3 to 15B A cross-sectional view of an exemplary heat exchange base for use with an exemplary embodiment of the present invention.

[0029] Fig.17 Shown with Figures 7 to 10B The exemplary embodiments of the present invention are used together with Fig.16 An exploded view of an exemplary heat exchange base.

[0030] Fig.18 Shown with Figures 11 to 15B The exemplary embodiments of the present invention are used together with Fig.16 An exploded view of an exemplary heat exchange base.

[0031] Fig.19 is based on Figure 1 A top view of an exemplary embodiment of an exemplary jet spray cooling assembly.

[0032] Fig. 20 yes Fig.19 A front view of an exemplary embodiment of FIG.

[0033] Fig.21 yes Fig.19 A bottom view of an exemplary embodiment of FIG.

[0034] Fig. 22 yes Fig.19 Isometric bottom view of an exemplary embodiment of .

[0035] Fig.23 It is shown Fig.19 A perspective front view of fluid flow in an exemplary embodiment of the present invention.

[0036] Fig.24 is a first graph demonstrating the improved cooling provided by various embodiments described herein as compared to conventional techniques.

[0037] Fig.25 is a second graph demonstrating the improved cooling provided by various embodiments described herein as compared to conventional techniques. DETAILED DESCRIPTION

[0038] As described in detail below, embodiments include a heat exchange assembly for performing jet spray cooling of a semiconductor power module. In an exemplary embodiment, a jet nozzle is attached both directly to the semiconductor device being cooled and to a heat sink to form a jet spray heat sink. Thus, the advantages of a jet spray cooling system can be achieved along with the heat dissipation of a heat sink. The jet spray heat sink enables the use of relatively wide jet nozzles, which reduces the occurrence of clogging of a single jet nozzle and reduces the pressure drop that occurs in the entire jet spray cooling system.

[0039] For example, a conventional jet nozzle is positioned at a distance from the semiconductor power module being cooled, and a spray of cooling liquid is directed across the distance and onto the semiconductor power module. However, the described technology directly attaches one or more jet nozzles to the semiconductor power module, for example using a welded part or a sintered part. The jet nozzle is also directly attached to (e.g., welded to or integrally formed to) a heat sink such as a metal heat sink to form a jet-injected heat sink. Therefore, the described technology achieves cooling by both jetting cooling liquid and dissipating (conducting heat) through the heat sink. Therefore, the described jet nozzle can be effective even when the jet nozzle is relatively wide and the corresponding fluid velocity / pressure is lower. Therefore, the described jet nozzle can show reduced clogging while also improving the pressure drop associated with using a jet-injected cooling system.

[0040] In a specific example, the jet spray cooling assembly described can be used for cooling in the context of automotive or other engine applications. Such applications typically have high power requirements within a high temperature environment while also meeting safety regulations.

[0041] Figure 1 FIG. 1 is a cross-sectional view of a jet-jet heat sink 100 for high-power semiconductor devices. Figure 1 In the embodiment of the present invention, the heat exchange base 102 (which may be referred to as or include a water jacket or cooling jacket) includes an inlet chamber 112 and an outlet chamber 126. Figure 1 Not visible in the Fig.17 and Fig.18 In the example of , the inlet chamber 112 can be fluidly connected to the inlet connection, and the outlet chamber can be fluidly connected to the outlet connection. Figure 1 , the inlet and outlet connections can be positioned in the z-direction (ie, away from the paper). Thus, the fluid pump (also not shown in FIG. Figure 1 ) can be used to form a fluid flow through the heat exchange base 102.

[0042] For example, a fluid pump may pump an inlet fluid stream 114, such as water, through an inlet connection, into an inlet chamber 112 as shown, and through a plurality of jet nozzles 110. Thus, the inlet fluid stream 114 may continue as an outlet fluid stream 116 that passes through an outlet chamber 126 and proceeds to an outlet connection, thereby returning to the fluid pump (possibly after proceeding through various other intervening fluid circuits). That is, the heat exchange base 102 for jet spray cooling may be only part of a fluid circuit used within a larger environment (e.g., within an automobile or other vehicle) to achieve fluid-based heat dissipation for multiple components.

[0043] The jet plate 108 may be positioned within the heat exchange base 102. The jet plate 108 may be connected to or integrally formed with a plurality of jet nozzles 110. The jet plate 108 and the jet nozzles 110 together form the jet ejecting fin 100 described above.

[0044] The pressurized inlet fluid stream 114 is forced through the jet nozzle 110 and is sprayed onto the semiconductor power module 122 to dissipate the heat generated by the operation of the semiconductor power module 122. The size, spacing and position of the jet nozzle 110 can be designed in any suitable or desired manner for the jet plate 108. The shape of the jet nozzle 110 can be any desired and suitable shape, such as a rectangle, a rounded rectangle, a circle or an ellipse. The jet nozzle 110 can be formed in the jet plate 108, or can be attached or otherwise positioned on the jet plate 108, for example, by using a separate jet nozzle structure, which itself can have a desired and suitable width, length and height, as described in more detail below.

[0045] The semiconductor power module 122 may include Figure 1 1. A circuit board or other assembly of multiple semiconductor chips or other devices are shown as exemplary semiconductor devices 124 and 125. The individual semiconductor power module devices 124, 125 may have thermal characteristics ranging from high to negligible.

[0046] As mentioned above, and as Figure 1 As shown, the heat exchange base 102 is configured to receive the semiconductor power module 122 so that the jet nozzle 110 can be positioned directly below the devices 124, 125 of the semiconductor power module 122. Therefore, the inlet fluid flow 114 can be forced through the jet nozzle 110 to be directly sprayed onto the corresponding back sides of the devices 124, 125 of the semiconductor power module 122. Such an approach enables efficient and direct cooling of the devices 124, 125 of the semiconductor power module 122.

[0047] After the jet impinges on the devices 124, 125 of the semiconductor power module 122, the outlet fluid flow 116 can flow into the outlet chamber 126 and through the outlet connection. In this way, the outlet fluid flow 116 can thus be provided to other components to be cooled and finally returned to the fluid pump used.

[0048] exist Figure 1 , each jet nozzle 110 includes an opening 110a (e.g., a discharge port or gap), a fluid channel 110b, and an attachment surface 110c. As shown, the opening 110a provides a passage for the pressurized inlet fluid stream 114 from the inlet chamber 112 to the semiconductor devices 124, 125. The fluid channel 110b provides a passage for the subsequent outlet fluid stream 116 to flow into the outlet chamber 126 (after being sprayed on the semiconductor devices 124, 125). The attachment surface 110c provides an attachment point through which the jet-jet heat sink 100 can be directly attached to the semiconductor power module 122, for example, to the corresponding semiconductor device of the semiconductor devices 124, 125, by using the connection portion 120.

[0049] For example, as in Figure 3 , Figure 7 and Fig.11 As shown in more detail in the exemplary embodiment of FIG. 1 , the opening 110 a may provide a cylindrical or conical passage for the inlet fluid flow 114, the cylindrical or conical passage being Figure 1 The fluid channel 110b can then form a subsequent path for the outlet fluid flow 116, as just described, wherein the fluid channel 110b is perpendicular to the opening 110a (e.g., at Figure 1The height of the fluid channel can be defined as the difference or distance between the opening 110a and the attachment surface 110c, and thus, the height can be referred to as the fluid channel height.

[0050] Thus, the attachment surface 110c may include, for example, a portion or surface of the jet nozzle 110 in which the fluid channel 110b is not formed. Thus, a connection 120, which may represent a solder connection or a sintered connection, may be made between the attachment surface 110c and the semiconductor module 122. Since the jet-jet heat sink 100 is formed of one or more materials that are capable of conducting heat (e.g., a metal such as copper), heat from the semiconductor devices 124, 125 may be dissipated directly in addition to being dispersed through the action of the jet jet provided by the jet nozzle 110 and the associated flow of the fluid 114 / 116.

[0051] exist Figure 1 In the example of FIG. 1 , the jet plate 108 may be attached to the inlet chamber 112 and positioned at the distal end of the jet nozzle 110 relative to the semiconductor power module 122. However, in other examples, such as in Figures 11 to 15B In the example of FIG. 1 , the jet plate 108 can be positioned at the proximal end of the jet nozzle 110 relative to the semiconductor power module 122 . In other words, the jet ejection heat sink 100 can be constructed by positioning the jet plate 108 at any desired position along the length of the jet nozzle 110 .

[0052] Thus, as described above, the described jet injection heat sink 100 forms the aforementioned dual heat dissipation mechanism, including liquid cooling by jet injection and heat dissipation by the thermally conductive material of the jet injection heat sink 100. Additionally, the jet injection heat sink 100 achieves various other advantages over conventional cooling techniques.

[0053] For example, in conventional jet ejection systems, the diameter of the jet nozzle opening may be required to be very narrow (e.g., on the order of hundreds of microns) in order to achieve jet ejection with sufficiently high fluid velocity and pressure to achieve the desired degree of cooling. Such small openings may be susceptible to clogging. In addition, the high velocity / pressure of conventional jet ejection systems may corrode the metal or metal coating disposed on the semiconductor device being cooled, which may cause problems in some cases.

[0054] In contrast, compared with conventional jet injection systems, Figure 1The jet-injection heat sink 100 achieves dual cooling, including heat dissipation through the material of the jet-injection heat sink 100, thereby reducing the cooling that needs to be achieved through jet injection. For example, the diameter of the opening 110a can be larger than the diameter in a conventional system, for example, one millimeter or more, which can reduce the velocity / pressure of the outlet fluid flow 116, but can also reduce or eliminate the above-mentioned problems related to clogging and corrosion. By similar reasoning, the overall pressure drop of the entire described jet-injection cooling system can be reduced, which can help improve the performance of the overall fluid circuit in which the described jet-injection cooling system may be included. For example, the reduced pressure drop can reduce the requirements associated with the fluid pump used and / or enable the use of a smaller or more efficient fluid pump.

[0055] In other embodiments, clogging, corrosion, and pressure drop factors may be balanced against the overall cooling requirement. For example, because the openings 110a may be closer to the semiconductor modules 122 than in conventional jet injection systems, more efficient and more intense cooling may be achieved, thereby increasing the total amount of heat dissipation achieved by the jet injection heat sink 100, as compared to conventional systems.

[0056] For example, in conventional systems, the jet nozzle may be spaced a specified distance from the device being cooled, through which the pressurized fluid must travel. Figure 1 In the embodiment shown in FIG. 1 , opening 110a is separated from semiconductor module 122 by only the fluid channel height of fluid channel 110b. Therefore, the fluid velocity of the outlet fluid flow from opening 110a at the surface of semiconductor devices 124, 125 can be higher than the fluid velocity in conventional systems having a comparable nozzle diameter (and other related parameters) but spaced farther from the semiconductor devices.

[0057] Therefore, it should be understood that various factors such as nozzle diameter and fluid channel height may be a matter of design choice for the designer to balance factors such as clogging / corrosion / pressure drop against the total amount of cooling required. For example, since the injection plate 108 achieves heat dissipation and the openings 110a are close to the semiconductor devices 124, 125, the nozzle diameter is comparable and the fluid channel height is small. Figure 1 Embodiments of the jet injection heat sink 100 may generally achieve greater overall cooling than conventional jet injection cooling systems.

[0058] Figure 2 is a flow chart illustrating an exemplary manufacturing process for manufacturing a jet spray cooling assembly according to an exemplary embodiment described herein. Figure 2In the embodiment of the present invention, operations 202 to 212 are shown as separate, ordered, sequential operations. However, it should be understood that in various exemplary manufacturing processes, operations 202 to 212 may be performed in a different order than shown and / or may be performed partially or completely in parallel. In addition, additional or alternative operations may be included, and / or one or more operations may be omitted.

[0059] exist Figure 2 In the example of FIG. 1 , a heat exchange base 102 having an inlet chamber 112 and an outlet chamber 126 can be formed ( 202 ). The inlet connection can be formed to be fluidly connected to the inlet chamber 112 ( 204 ), and the outlet connection can be formed to be fluidly connected to the outlet chamber 126 ( 206 ), such as, for example Figures 17 to 23 as shown in the example.

[0060] A plurality of jet nozzles 110 may be formed, the plurality of jet nozzles 110 including corresponding openings 110a (208). The plurality of jet nozzles 110 may be attached to a jet plate 108 (210). The plurality of jet nozzles 110 and the jet plate 108 may be attached to the semiconductor module 122 and positioned such that a fluid flow from an inlet chamber is jetted through the plurality of jet nozzles onto the semiconductor module and then reaches an outlet chamber (212).

[0061] For example, Figure 1 As shown, the jet nozzle 110 may include an opening 110a that is separated from the attachment surface 110c by a fluid channel height of a fluid channel 110b that is formed to be fluidly connected to the opening 110a. In this way, the jet nozzle 110 can be mechanically connected to the semiconductor module 122, such as by using a welding process or a sintering process, while still enabling the outlet fluid stream 116 to flow.

[0062] For example, the attachment surface 110c may be directly soldered or sintered to the corresponding semiconductor device 124, 125, while the jet nozzle may be attached to or integrally formed with the jet plate 108. Figures 11 to 15B As shown, the jet plate 108 may be mechanically connected (e.g., welded or sintered) to the semiconductor module 122, and the attachment surface 110c of the jet nozzle is connected to the jet plate 108. In other words, the jet nozzle may be mechanically connected to the semiconductor module 122 directly or indirectly (e.g., via the jet plate 108).

[0063] therefore, Figure 1 and Figure 2Devices and methods provide high accuracy and / or high precision cooling liquid to identified high temperature points of semiconductor power modules at desired velocities and pressure levels while also achieving heat dissipation through the use of mechanically coupled thermally conductive materials. For example, the described jet injection cooling assembly embodiments provide direct contact of a cooling fluid with the backside of a substrate to be cooled (e.g., a direct bonded copper (DBC) substrate (e.g., a substrate including a dielectric disposed between a pair of metal layers for tracking and / or bonding)).

[0064] The described jet jet heat exchange (cooling) assembly embodiments may be configured to uniform or tailor the pressure at each of the one or more jet nozzles 110 to achieve the desired degree of cooling at the corresponding multiple high temperature points. For example, the diameters of the openings 110a may be varied to achieve the desired degree of cooling at the individual semiconductor devices 124, 125. The jet jet cooling assembly is efficient because the jet jetting occurs at least (e.g., only) at the desired and necessary high temperature points.

[0065] Figure 3 Shows Figure 1 A top view, a front view, and a cross-sectional view of an exemplary embodiment of a jet-jet heat sink for a high power semiconductor device. Figure 3 In the example of FIG. 3 , the jet injection heat sink 300 includes a jet plate 308 and a plurality of jet nozzles 310. Figure 1 As shown, each jet nozzle includes an opening 310a, a fluid passage 310b, and an attachment surface 310c.

[0066] More specifically, each jet nozzle 310 is shown as a rectangle (eg, square) with an opening 310a formed at the center of each jet nozzle 310. The fluid passage 310b is a bidirectional fluid passage that provides an outlet fluid flow substantially perpendicular to an inlet fluid flow through each opening 310a.

[0067] In addition, the fluid passage 310b is positioned at an angle (e.g., diagonally) relative to a vertical centerline and / or a horizontal centerline passing through the corresponding jet nozzle. By providing a diagonally oriented fluid passage 310b, Figure 3 The design prevents the flow out of one fluid channel 310b from being directed into the flow out of an adjacent fluid channel 310b. In other words, collisions between adjacent outflows of adjacent fluid channels 310b can be prevented. The front view provided shows that the fluid channel 310b provides an outlet fluid flow that exits at a non-central position along the corresponding attachment surface 310c.

[0068] In addition, Figure 3, a cross-sectional view is provided showing that the opening 310a can be provided with a tapered design in which the diameter of the opening 310a is slightly smaller at the top of the opening 310a (closer to the fluid channel 310b) than at the bottom of the opening 310a (closer to the jet plate 308). By providing such a tapered opening, the inlet fluid flow can be facilitated (and the likelihood of clogging can be reduced) by using a relatively large opening at the mouth of the cone, while the outlet velocity and pressure of the outlet fluid flow leaving the opening 310a can be controlled to a desired range by selecting a corresponding diameter of the opening 310a at the junction of the opening 310a and the fluid channel 310b.

[0069] Figure 4 shows the semiconductor power module 422 attached to the Figure 3 A cross-sectional view of an embodiment of the present invention. Figure 4 As shown, the jet nozzle 310 may be attached to a semiconductor power module 422 by using a welding point or a sintering point 420 disposed between the attachment surface 310 c and a surface of the semiconductor power module 422 .

[0070] Figure 5 yes Figure 3 An exploded view of an embodiment of FIG. 5 shows an exemplary heat exchange base 502 . Figure 5 The heat exchange base 502 is shown to include an opening to receive the jet injection fins 300. Figure 5 In the view of FIG. 5 , the outlet connection 506 is visible, and the inlet connection may be arranged adjacent to the outlet connection 506, but in FIG. Figure 5 Not visible in the following reference Fig.17 As shown and described in more detail, the heat exchange base 502 enables fluid flow through the inlet connection and into the inlet chamber formed by positioning the jet injection fins 300 within the opening of the heat exchange base 502, through the opening 310a, and to the heat exchange base 502 such as Figure 4 The fluid flow may then travel through the fluid passage 310b and into the outlet chamber formed by positioning the jet ejection heat sink 300 within the opening of the heat exchange base 502, and from the outlet chamber through the outlet connection 506, as described.

[0071] Fig. 6A Shows Figure 3 A top view of an exemplary fluid velocity profile of an embodiment of . As just described, Fig. 6A The outlet fluid flow 616 exiting the fluid channel 310b is shown. Also as described above, Fig. 6A It is shown that due to the angled location of the various fluid channels 310b, the outlet fluid streams 616 are prevented from colliding with each other.

[0072] Figure 6B Shows Fig. 6A Front view of an exemplary fluid velocity profile. Figure 6B An inlet fluid flow 614 is shown entering through a wider portion of the tapered opening 310a at a first velocity and exiting through a narrower portion of the tapered opening 310a at a higher velocity.

[0073] Figure 7 Shows Figure 1 A top view, a perspective front view, and a cross-sectional view of a second exemplary embodiment of a jet ejection heat sink for a high power semiconductor device. Figure 7 In the example of FIG. 7 , the jet injection heat sink 700 includes a jet plate 708 and a plurality of jet nozzles 710. Figure 1 and Figure 3 As shown, each jet nozzle includes an opening 710a, a fluid passage 710b, and an attachment surface 710c.

[0074] More specifically, each jet nozzle 310 is shown as a rectangular shape (eg, a square shape), wherein an opening 710a is formed at the center of each jet nozzle 710. Figure 7 In, with Figure 3 In contrast to the example of , fluid channel 310b is a unidirectional fluid channel that provides an outlet fluid flow that is substantially perpendicular to the inlet fluid flow through each opening 710a.

[0075] Similar to Figure 3 In the example of FIG. 7 , the fluid channel 710 b is positioned at an angle (e.g., diagonally) relative to a vertical centerline and / or a horizontal centerline passing through the corresponding jet nozzle. By providing a diagonally oriented fluid channel 710 b, Figure 7 The design prevents the flow out of one fluid channel 710b from being directed into the flow out of an adjacent fluid channel 710b. In other words, collisions between adjacent outflow flows of adjacent fluid channels 710b can be prevented. The perspective front view provided shows that the fluid channel 710b provides an outlet fluid flow that exits at a non-central position along the corresponding attachment surface 710c.

[0076] In addition, Figure 7 , the cross-sectional view provided shows that the opening 710a may be provided with a reference Figures 3 to 6B 1 and 2 depict a tapered design in which the diameter of opening 710a is slightly smaller at the top of opening 710a (closer to fluid channel 710b) than at the bottom of opening 710a (closer to jet plate 708).

[0077] Figure 8 Shows Figure 7 Implementation methods and corresponding exploded views of multiple high-power semiconductor devices to be cooled. Specifically, Figure 8 A semiconductor power module 822 is shown, which includes a total of 6 semiconductor power devices to be cooled. Figure 8 In FIG. 8 , devices 824 and 825 are shown as Figure 1 The components 124 and 125 of the semiconductor module 122 correspond to each other.

[0078] like Figure 8 As shown, the individual jet nozzles 710 can thus be positioned on the jet plate 708 to directly correspond to the location of the individual semiconductor devices of the semiconductor power module 822. Thus, the described jet-jet heat sink 700 is highly efficient because jet jetting occurs at least (e.g., only) at desired and necessary high temperature points.

[0079] Fig. 9 yes Figure 7 An exploded view of an embodiment of FIG. 1 is shown, illustrating an exemplary heat exchange base 902 . Fig. 9 The heat exchange base 902 is shown to include openings to receive the jet injection fins 700. Fig. 9 In the view of FIG. 1 , the outlet connection 906 is visible, and the inlet connection can be arranged adjacent to the outlet connection 906, but in FIG. Fig. 9 Not visible in the reference Figure 5 And the following references Fig.17 As shown and described in more detail, the heat exchange base 902 enables fluid flow through the inlet connection and into the inlet chamber formed by positioning the jet injection fins 700 within the opening of the heat exchange base 902, through the opening 710a, and to the heat exchange base 902, such as Figure 8 The fluid flow may then travel through the fluid passage 710b and into the outlet chamber formed by positioning the jet ejection fin 700 within the opening of the heat exchange base 902, and from the outlet chamber through the outlet connection 906, as described.

[0080] Fig. 10A Shows Figure 7 A top view of an exemplary fluid velocity profile of an embodiment of . As just described, Fig. 10A The outlet fluid flow 1016 exiting the fluid channel 710b is shown. Also as described above, Fig. 10A It is shown that the outlet fluid streams 1016 are prevented from colliding with each other due to the inclined position of the fluid channel 710b.

[0081] Fig. 10B Shows Fig. 10A Front view of an exemplary fluid velocity profile. Fig. 10BAn inlet fluid flow 1014 is shown entering through a wider portion of the tapered opening 710a at a first velocity and exiting through a narrower portion of the tapered opening 710a at a higher velocity.

[0082] Fig.11 Shows Figure 1 An isometric view of a third exemplary embodiment of a jet-jet heat sink for a high power semiconductor device. Fig.11 In the embodiment, the jet ejection heat sink 1100 includes a jet plate 1108 connected to or including an attachment surface 1110c of a corresponding plurality of jet nozzles 1110. The openings 1110a through the jet nozzles 1110 can be fluidly connected to the fluid channels 1110b. As described in more detail below, for example, with reference to Fig.13 and Fig.14 Positioning the jet plate 1108 at the attachment surface 1110c creates a relatively large surface area for use when welding or sintering the jet injection heat sink 1100 to the semiconductor power module. In other words, by welding or sintering the jet plate 1108 to the semiconductor power module, a more secure mechanical connection of the jet injection heat sink 1100 to the semiconductor power module can be achieved, and it is more compatible with, for example, Figure 3 and Figure 7 Compared to the exemplary jet-injected heat sink, heat dissipation can be improved.

[0083] Fig.12 Shows Fig.11 A bottom view, a perspective front view, and a cross-sectional view of a third exemplary embodiment of a jet ejection heat sink for a high power semiconductor device. Fig.12 In the example of FIG. 1 , the jet nozzle 1110 of the jet-injecting fin 1100 is shown with a corresponding opening 1110a (which is tapered as described above) configured to receive an incoming inlet fluid flow.

[0084] like Fig.11 and Fig.12 As shown in the various views of FIG, the fluid channel 1110b extends through the periphery of the jet nozzle 1110 (e.g., through the attachment surface 1110c of the jet nozzle 1110) so that the outlet fluid flow can travel from the fluid channel 1110b in a direction through the wall / body of the jet nozzle 1110 to reach the outlet connection. In the specific example shown, the fluid channel 1110b is formed in an "I" or "H" shape, wherein the outlet fluid flow travels through a central channel portion of the fluid channel 1110b and exits through a vertical channel portion perpendicular to the central channel portion.

[0085] Fig.13 shows the semiconductor power module 1322 attached to the Fig.11 A cross-sectional view of an embodiment of the present invention. Fig.13 As shown, the jet nozzle 1110 can be attached to the semiconductor power module 1322 using welding points or sintering points 1320. Specifically, as shown, the jet nozzle 1110 can be indirectly attached by welding or sintering the jet plate 1108 to the surface of the semiconductor power module 1322.

[0086] Fig.14 yes Fig.11 An exploded view of an embodiment of FIG. 1400 is shown, illustrating an exemplary heat exchange base 1402 .

[0087] Fig.14 The heat exchange base 1402 is shown to include an opening to receive the jet injection fins 1100. Fig.14 In the view of FIG. 1 , the outlet connection 1406 is visible, and the inlet connection may be arranged adjacent to the outlet connection 1406, but in FIG. Fig.14 As mentioned above and below, reference Fig.18 Described in more detail, the heat exchange base 1402 enables fluid flow through the inlet connection and into the inlet chamber formed by positioning the jet injection fin 1100 within the opening of the heat exchange base 1402, through the opening 1110a, and to the Fig.13 The fluid flow may then travel through the fluid passage 1110b and into the outlet chamber formed by positioning the jet ejecting fin 1100 within the opening of the heat exchange base 1402, and from the outlet chamber through the outlet connection 1406, as described.

[0088] Fig.14 It is also shown that the welded or sintered part 1320 can be applied to, for example, Figure 5 and Fig. 9 That is, as shown, the weld or sinter 1320 may be applied to a large portion of the jet plate 1108 to achieve a secure and stable bond with the jet plate 1108. Fig.13 The semiconductor power module 1322 is connected.

[0089] Fig.15A Shows Fig.11 A top view of an exemplary fluid velocity profile of an embodiment of . As just described, Fig.15A The outlet fluid flow 1516 exiting the fluid channel 1110b is shown. Also as described above, Fig.15A It is shown that due to the vertical channel portion exiting through the fluid channel 1110b, the outlet fluid streams 1516 are prevented from colliding with each other.

[0090] Fig. 15B Shows Fig.15A Front view of an exemplary fluid velocity profile. Fig. 15B An inlet fluid flow 1514 is shown entering through a wider portion of the tapered opening 1110a at a first velocity and exiting through a narrower portion of the tapered opening 1110a at a higher velocity.

[0091] Fig.16 Shows that Figures 3 to 15B 16. As shown, the inlet chamber 1612 can be positioned so that the fluid flow can pass through the jet nozzle 1610, arrive at the semiconductor power module 1622, and flow out into the outlet chamber 1626. The jet nozzle 1610 is connected to the semiconductor power module 1622 using a weld or sinter point 1620.

[0092] Fig.17 Shown with Figures 7 to 10B The exemplary embodiments of the present invention are used together with Fig.16 An exploded view of an exemplary heat exchange base of FIG. Fig.17 In the example of FIG. 1 , the heat exchange base 1702 includes a lower cooling jacket 1702a with an inlet connection 1704 for receiving an inlet fluid flow and an outlet connection 1706 for outputting an outlet fluid flow. The inlet chamber 1712 is defined by the upper cooling jacket 1702b, the cover layer 1734, and the jet injection fins 700. The outlet chamber 1726 is defined by positioning the jet injection fins 700 and the cover layer 1734. It should be understood that Figure 3 The jet injection heat sink 300 can replace Fig.17 The jet injection heat sink 700 in the example.

[0093] Fig.18 Shown with Figures 11 to 15B The exemplary embodiments of the present invention are used together with Fig.16 An exploded view of an exemplary heat exchange base of FIG. Fig.18 In the example of FIG. 1 , the heat exchange base 1802 includes a lower cooling jacket 1802a with an inlet connection 1804 for receiving an inlet fluid flow and an outlet connection 1806 for outputting an outlet fluid flow. The inlet chamber 1812 is defined by the upper cooling jacket 1802b, the cover layer 1834, and the jet injection fins 1100. The outlet chamber 1826 is defined by positioning the jet injection fins 1100 and the cover layer 1834.

[0094] exist Fig.18 In the example of FIG. 1 , the jet plate 1108 of the jet injection heat sink 1100 is positioned for attachment to a semiconductor power module, such as Fig.14To ensure efficient transfer of fluid from the inlet chamber 1812 through the jet nozzle 1110, holes 1836 may be provided in the bottom surface of the upper cooling jacket, as shown.

[0095] Fig.19 is based on Figure 1 A top view of an exemplary embodiment of an exemplary jet spray cooling assembly. Fig. 20 yes Fig.19 A front view of an exemplary embodiment of FIG. Fig.21 yes Fig.19 A bottom view of an exemplary embodiment of FIG. Fig. 22 yes Fig.19 Isometric bottom view of an exemplary embodiment of .

[0096] exist Figures 19 to 23 In the example of FIG. 1 , the heat exchange base 1902 is used to implement jet cooling of three semiconductor power modules 1922 , which may include semiconductor devices 1924 and 1926 . The inlet connection 2004 and the outlet connection 2106 may be disposed at one end of the heat exchange base 1902 .

[0097] Fig.23 It is shown Fig.19 A perspective front view of fluid flow in an exemplary embodiment of FIG. Fig.23 , inlet fluid flow 2314 is shown as traveling through inlet connection 2004. After traveling through any of the jet-jet heat sinks described above to cool semiconductor power module 1922, the coolant travels to outlet connection 2106 as outlet fluid flow 2316.

[0098] Fig.24 is a first graph demonstrating the improved cooling provided by various embodiments described herein as compared to conventional techniques. Fig.24 It is shown that the thermal resistance of embodiments 300, 700, and 1100 is lower than two conventional cooling technologies.

[0099] Fig.25 is a second graph illustrating the improved cooling provided by various embodiments described herein compared to conventional techniques. Fig.25 , it is shown that the pressure drop of embodiments 300, 700 and 1100 is lower than the pressure drop that occurs when using the two shown conventional techniques.

[0100] A first exemplary embodiment, referred to herein as Example 1, includes a jet spray cooling assembly for a semiconductor device, the jet spray cooling assembly comprising:

[0101] a heat exchange base having an inlet chamber and an outlet chamber;

[0102] an inlet connection in fluid connection with the inlet chamber;

[0103] an outlet connection in fluid connection with the outlet chamber; and

[0104] A plurality of jet nozzles are attached to the semiconductor module, the plurality of jet nozzles including corresponding openings positioned such that jets of fluid flow from the inlet chamber are ejected onto the semiconductor module and then enter the outlet chamber.

[0105] Embodiment 2 includes a jet spray cooling assembly for a semiconductor device according to embodiment 1, wherein each of the plurality of jet nozzles includes a fluid channel that is perpendicular to a direction of fluid flow through an opening and parallel to a surface of a semiconductor module to which the plurality of jet nozzles are attached.

[0106] Embodiment 3 includes the jet spray cooling assembly for a semiconductor device according to embodiment 2, wherein each fluid channel is angled to prevent fluid collision between adjacent jet nozzles.

[0107] Embodiment 4 includes the jet spray cooling assembly for a semiconductor device according to embodiment 2, wherein each fluid channel includes at least two fluid connections between each corresponding opening and the outlet chamber.

[0108] Embodiment 5 includes the jet spray cooling assembly for a semiconductor device according to embodiment 1, the jet spray cooling assembly further comprising:

[0109] A jet plate is attached to the plurality of jet nozzles, wherein the jet plate and the plurality of jet nozzles form a jet-jet heat sink that dissipates heat generated by operation of the semiconductor module.

[0110] Embodiment 6 includes the jet spray cooling assembly for a semiconductor device according to embodiment 5, wherein the jet plate is attached to distal ends of the plurality of jet nozzles relative to the semiconductor module.

[0111] Embodiment 7 includes the jet spray cooling assembly for a semiconductor device according to embodiment 5, wherein the jet plate is attached to proximal ends of the plurality of jet nozzles relative to the semiconductor module, and to the semiconductor module.

[0112] Embodiment 8 includes the jet spray cooling assembly for a semiconductor device according to embodiment 1, wherein the plurality of jet nozzles are welded to the semiconductor module.

[0113] Embodiment 9 includes the jet spray cooling assembly for a semiconductor device according to embodiment 1, wherein the plurality of jet nozzles are sintered to the semiconductor module.

[0114] Embodiment 10 includes the jet spray cooling assembly for a semiconductor device according to embodiment 1, wherein each opening is tapered in a direction of the semiconductor module.

[0115] An eleventh exemplary embodiment, referred to herein as Embodiment 11, includes a jet-jet heat sink for jet-jet cooling of at least one semiconductor device, the jet-jet heat sink comprising:

[0116] a fluidic plate configured to be received within the heat exchange base; and

[0117] a plurality of jet nozzles attached to the jet plate and to at least one semiconductor device,

[0118] The jet plate and the plurality of jet nozzles, when received in the heat exchange base, define a fluid flow from an inlet chamber of the heat exchange base through the plurality of jet nozzles and onto at least one semiconductor device, and then to an outlet chamber of the heat exchange base.

[0119] Embodiment 12 includes a jet-jet heat sink for jet-jet cooling of at least one semiconductor device according to embodiment 11, wherein each of the plurality of jet nozzles includes a fluid channel that is perpendicular to a direction of fluid flow through the plurality of jet nozzles and parallel to a surface of at least one semiconductor device to which the plurality of jet nozzles are attached.

[0120] Embodiment 13 includes the jet-jet cooling heat sink for jet-jet cooling of at least one semiconductor device according to Embodiment 11, wherein the jet plate is attached to distal ends of the plurality of jet nozzles relative to the at least one semiconductor device.

[0121] Embodiment 14 includes the jet-jet heat sink for jet-jet cooling of at least one semiconductor device according to Embodiment 11, wherein the jet plate is attached to proximal ends of the plurality of jet nozzles relative to the at least one semiconductor device.

[0122] Embodiment 15 includes the jet spray heat sink for jet spray cooling of at least one semiconductor device according to embodiment 11, wherein a plurality of jet nozzles are soldered to the at least one semiconductor device.

[0123] Embodiment 16 includes the jet-jet cooling heat sink for jet-jet cooling of at least one semiconductor device according to embodiment 11, wherein a plurality of jet nozzles are sintered to the at least one semiconductor device.

[0124] A seventeenth exemplary embodiment, referred to herein as Example 17, includes a method of manufacturing a jet-jet heat sink for a semiconductor device, the method comprising:

[0125] attaching a jet plate to the plurality of jet nozzles; and

[0126] A fluidic plate and a plurality of fluidic nozzles are attached to at least one semiconductor device.

[0127] Embodiment 18 includes the method according to embodiment 17, further comprising:

[0128] forming a heat exchange base having an inlet chamber and an outlet chamber;

[0129] forming an inlet connection in fluid connection with the inlet chamber;

[0130] forming an outlet connection in fluid connection with the outlet chamber; and

[0131] A fluidic plate and attached fluidic nozzles are coupled to the inlet chamber to define a fluid flow from the inlet chamber through the plurality of fluidic nozzles and onto the at least one semiconductor device and then to the outlet chamber.

[0132] Embodiment 19 includes the method according to embodiment 18, further comprising:

[0133] A fluid channel is formed in each of the plurality of jet nozzles, the fluid channel being perpendicular to a direction of fluid flow through the jet nozzle and parallel to a surface of at least one semiconductor device to which the plurality of jet nozzles are attached.

[0134] Embodiment 20 includes embodiment 18, wherein attaching the jet plate and the plurality of jet nozzles to at least one semiconductor device comprises:

[0135] At least one of the jet plate and the plurality of jet nozzles is soldered or sintered to at least one semiconductor device.

[0136] The described techniques enable efficient, reliable and cost-effective cooling of semiconductor devices. The maximum temperature of the semiconductor device can be limited to a desired range, and temperature variations can be minimized (ie, the temperatures of multiple heat sources can be kept consistent).

[0137] It should be understood that in the foregoing description, when an element such as a layer, a region, a substrate or a part is mentioned as being on another element, connected to another element, electrically connected to another element, coupled to another element, or electrically coupled to another element, the element may be directly on another element, connected to or coupled to another element, or one or more intermediate elements may be present. On the contrary, when an element is mentioned as being directly on another element or layer, directly connected to another element or layer, or directly coupled to another element or layer, there is no intermediate element or layer. Although the term may not be used in the entire specific embodiment directly on ..., directly connected to ..., or directly coupled to ..., the element shown as being directly located on an element, directly connected or directly coupled can be mentioned in this manner. The claims of the present application (if any) may be revised to narrate the example relationship described in the specification or shown in the drawings.

[0138] As used in this specification and claims, unless the context clearly indicates a particular case, the singular may include the plural. In addition to the orientation shown in the drawings, spatial relative terms (e.g., above, above, above, below, below, below, below, etc.) are intended to cover different orientations of the device in use or operation. In some specific implementations, the relative terms above and below may include vertically above and vertically below, respectively. In some specific implementations, the term adjacent may include lateral adjacent or horizontal adjacent.

[0139] Some implementations may be implemented using various semiconductor processing and / or packaging technologies. Some implementations may be implemented using various types of semiconductor processing technologies associated with semiconductor substrates, including but not limited to, for example, silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC), etc.

[0140] Although certain features of the described implementations have been illustrated as described herein, those skilled in the art will now appreciate that many modifications, alternatives, variations, and equivalents are contemplated. Therefore, it should be understood that the appended claims are intended to cover all such modifications and variations that fall within the scope of the implementations. It should be understood that these modifications and variations are presented only by way of example and not limitation, and that various changes in form and detail may be made. In addition to mutually exclusive combinations, any portion of the apparatus and / or method described herein may be combined in any combination. The implementations described herein may include various combinations and / or sub-combinations of the functions, components, and / or features of the different implementations described.

Claims

1. A jet cooling assembly (100) for a semiconductor device (124, 125), the jet cooling assembly comprising: a heat exchange base (102) having an inlet chamber (112) and an outlet chamber (126); an inlet connection (1704, 1804, 2004), the inlet connection being fluidically connected to the inlet chamber (112); an outlet connection (1706, 1806, 2106) in fluid connection with the outlet chamber (126); and A plurality of jet nozzles (110) are attached to a semiconductor module (122), the plurality of jet nozzles (110) comprising corresponding openings (110) positioned so that a fluid stream (114) from the inlet chamber (112) is jetted onto the semiconductor module (122) and then enters the outlet chamber (126).

2. The jet cooling assembly (100) for a semiconductor device (124, 125) according to claim 1, wherein: Each of the plurality of jet nozzles (110) includes a fluid channel (110b) perpendicular to a direction of fluid flow through the opening and parallel to a surface of the semiconductor module (122) to which the plurality of jet nozzles (110) are attached.

3. The jet cooling assembly (100) for a semiconductor device (124, 125) according to claim 2, wherein: Each fluid passage (110b) is angled to prevent fluid collision between adjacent jet nozzles (110).

4. The jet cooling assembly (100) for a semiconductor device (124, 125) according to claim 2, wherein: Each fluid channel (110b) includes at least two fluid connections between each corresponding opening and the outlet chamber (126).

5. The jet spray cooling assembly (100) for a semiconductor device (124, 125) according to claim 1, further comprising: A jet plate (108) is attached to the plurality of jet nozzles (110), wherein the jet plate (108) and the plurality of jet nozzles (110) form a jet-jet heat sink (100) that dissipates heat generated by operation of the semiconductor module (122).

6. The jet cooling assembly (100) for a semiconductor device (124, 125) according to claim 5, wherein: The jet plate (108) is attached to distal ends of the plurality of jet nozzles (110) relative to the semiconductor module (122).

7. The jet cooling assembly (100) for a semiconductor device (124, 125) according to claim 5, wherein: The jet plate (108) is attached to proximal ends of the plurality of jet nozzles (110) relative to the semiconductor module (122) and to the semiconductor module (122).

8. The jet cooling assembly (100) for a semiconductor device (124, 125) according to claim 1, wherein: The plurality of jet nozzles (110) are welded to the semiconductor module (122).

9. The jet cooling assembly (100) for a semiconductor device (124, 125) according to claim 1, wherein: The plurality of jet nozzles (110) are sintered to the semiconductor module.

10. The jet cooling assembly (100) for a semiconductor device (124, 125) according to claim 1, wherein: Each of the openings (110a) is tapered in the direction of the semiconductor module.

11. A jet-jet heat sink (100) for jet-jet cooling of at least one semiconductor device (124, 125), the jet-jet heat sink comprising: a fluidic plate (108) configured to be received within the heat exchange base (102); and a plurality of jet nozzles (110) attached to the jet plate (108) and to the at least one semiconductor device (124, 125), The jet plate (108) and the plurality of jet nozzles (110) when received in the heat exchange base (102) define a fluid flow from an inlet chamber (112) of the heat exchange base (102) through the plurality of jet nozzles (110) and onto the at least one semiconductor device (124, 125), and to an outlet chamber (126) of the heat exchange base (102).

12. The jet-jet cooling fin (100) for jet-jet cooling of at least one semiconductor device (124, 125) according to claim 11, wherein: Each of the plurality of jet nozzles (110) comprises a fluid channel (110b) perpendicular to a direction of a fluid flow (114) through the plurality of jet nozzles and parallel to a surface of the at least one semiconductor device (124, 125) to which the plurality of jet nozzles (110) are attached.

13. The jet-jet cooling fin (100) for jet-jet cooling of at least one semiconductor device (124, 125) according to claim 11, wherein: The jet plate (108) is attached to distal ends of the plurality of jet nozzles (110) relative to the at least one semiconductor device (124, 125).

14. The jet-jet cooling fin (100) for jet-jet cooling of at least one semiconductor device (124, 125) according to claim 11, wherein: The jet plate (108) is attached to proximal ends of the plurality of jet nozzles (110) relative to the at least one semiconductor device (124, 125).

15. The jet-jet cooling fin (100) for jet-jet cooling of at least one semiconductor device (124, 125) according to claim 11, wherein: The plurality of jet nozzles (110) are soldered to the at least one semiconductor device (124, 125).

16. The jet-jet cooling fin (100) for jet-jet cooling of at least one semiconductor device (124, 125) according to claim 11, wherein: The plurality of jet nozzles (110) are sintered to the at least one semiconductor device (124, 125).

17. A method of manufacturing a jet-jet heat sink (100) for a semiconductor device (124, 125), the method comprising: attaching (210) a jet plate (108) to the plurality of jet nozzles (110); as well as The jet plate (108) and the plurality of jet nozzles (110) are attached (212) to at least one semiconductor device (124, 125).

18. The method according to claim 17, comprising: forming (202) a heat exchange base (102) having an inlet chamber (112) and an outlet chamber (126); forming (204) an inlet connection (1704, 1804, 2004) in fluid connection with the inlet chamber (112); forming (206) an outlet connection (1706, 1806, 2106) in fluid connection with the outlet chamber (126); and The jet plate (108) and attached jet nozzles (110) are coupled (212) to the inlet chamber (112) to define a fluid flow (114) from the inlet chamber (112) through the plurality of jet nozzles (110) and onto the at least one semiconductor device (124, 125) and then to the outlet chamber (126).

19. The method according to claim 18, further comprising: A fluid channel (110b) is formed in each of the plurality of jet nozzles (110), the fluid channel being perpendicular to a direction of a fluid flow (114) passing through the jet nozzle and parallel to a surface of the at least one semiconductor device (124, 125) to which the plurality of jet nozzles (110) are attached.

20. The method according to claim 18, wherein: Attaching the jet plate and the plurality of jet nozzles to the at least one semiconductor device comprises: At least one of the jet plate (108) and the plurality of jet nozzles (110) is soldered or sintered to the at least one semiconductor device (124, 125).

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