Method for roughening the surface of a glass substrate

Abstract

The present invention relates to a method for roughening the surface of a glass substrate in the field of glass substrates. The method comprises: immersing a rinsed glass substrate in a first KOH solution tank for pre-roughening treatment, thereby preliminarily adjusting the surface roughness of the glass substrate and making it more receptive to subsequent secondary roughening treatment; placing the glass substrate roughened by the first immersion into a second KOH solution tank for secondary roughening treatment; and using an ultrasonic generator to uniformly diffuse the KOH solution in the second KOH solution tank. Simultaneously, the KOH solution is stirred by a stirring device so that the KOH solution in the second KOH solution tank can uniformly etch the glass substrate, thereby improving the etching efficiency and quality of the glass substrate roughening; and adjusting the ultrasonic generator by real-time monitoring the cavitation bubble size distribution and silicon ion concentration in the KOH solution in the second KOH solution tank, thereby optimizing the treatment process and enhancing the roughening efficiency and quality.

Description

Technical Field

[0001] The present invention relates to the field of glass substrates, and in particular to a method for roughening the surface of a glass substrate. Background Art

[0002] In today's display technology landscape, glass substrates, as key foundational components, play a crucial role. This is particularly true in the development of Micro LED display panels, where glass substrates play an indispensable role. Micro LED display panels, with their high resolution, excellent color, low power consumption, and lightweight, flexible design, are increasingly at the forefront of display technology. During the manufacturing process of Micro LED display panels, the glass substrate supports the LED chips and, through a series of complex process steps, enables electrode conduction and image display.

[0003] Typically, glass substrates have a flat and smooth surface structure. To meet specific process requirements, such as achieving better conductivity during the quartz glass pressing process, the glass substrate surface needs to be roughened. Existing glass substrate roughening methods primarily include dry treatment processes, with plasma surface treatment being the most common. However, this dry treatment has significant limitations. Metal and particle residues often remain on the surface after plasma treatment, necessitating an additional wet cleaning step to remove these residual substances.

[0004] However, existing glass substrate roughening methods still have some drawbacks in practical applications. First, while existing dry roughening processes using plasma surface treatment can change the surface properties of glass substrates to a certain extent, they cannot avoid the residual metal and particles, which adversely affects subsequent process steps and thus the performance and quality of display panels. Second, the need for additional wet cleaning to remove the residual metal and particles makes the entire process more complex and lengthy, increasing production time and cost while also reducing production efficiency.

[0005] Furthermore, existing roughening methods have deficiencies in controlling the degree and uniformity of roughening, resulting in inconsistent contact between the glass substrate and other components during the lamination process, which in turn affects the overall performance of the display panel. Furthermore, due to the inability to precisely control the roughening process and the difficulty in controlling the uniformity and stability of the roughening etching solution, it is difficult to ensure the etching efficiency and quality of the glass substrate roughening, thereby affecting the practicality of the glass substrate. Furthermore, existing roughening methods lack the means to monitor and adjust parameters during the treatment process, making it impossible to effectively monitor and control key parameters such as the ion concentration and bubble size distribution in the solution in real time. This makes it difficult to achieve the optimal treatment effect and increases the uncertainty and uncontrollability of the process. Summary of the Invention

[0006] The purpose of the present invention is to address the above-mentioned defects and provide a method for roughening the surface of a glass substrate to solve the technical problems in the above-mentioned background technology, such as the poor etching effect and poor roughening quality of the existing glass substrate roughening methods, and the lack of corresponding monitoring and control, which leads to poor use effect of the roughening method and affects the roughening quality and production efficiency of the glass substrate.

[0007] The object of the present invention is achieved in the following ways:

[0008] A method for roughening the surface of a glass substrate, the roughening method comprising the following steps:

[0009] Step 1: Soak to remove impurities. Soak the glass substrate in a HCL solution pool with a preset concentration to remove metal residues on the surface of the glass substrate.

[0010] Step 2: Rinse, take out the glass substrate after immersion in the HCL solution pool, place it in the first water tank, and perform multiple cycles of rinsing to remove metal ions and particles attached to the surface of the glass substrate;

[0011] Step 3: First pre-roughening soaking, soaking the rinsed glass substrate in a first soaking KOH solution pool for treatment to pre-roughen the surface of the glass substrate;

[0012] Step 4: Second roughening soaking: The glass substrate immersed in the first KOH solution tank is taken out and placed in the second KOH solution tank for soaking to perform a secondary roughening treatment on the surface of the glass substrate. The KOH solution is evenly diffused by an ultrasonic generator and stirred by a stirring device. The cavitation bubble size distribution and silicon ion concentration in the KOH solution are monitored in real time. The ultrasonic generator parameters are adjusted according to the monitoring results, and the glass substrate is taken out of the KOH solution;

[0013] Step 5: Cleaning: taking out the glass substrate after the secondary roughening treatment and placing it in a second water tank for multiple rinses to remove the KOH solution and roughening particles remaining on the surface of the glass substrate;

[0014] Step 6: Drying: Place the rinsed glass substrate in a holding tank containing isopropyl alcohol, and dry the glass substrate through the Marangoni effect to complete the roughening of the surface of the glass substrate.

[0015] Further in the above description, in step 1, the glass substrate is immersed in a HCl solution pool with a HCl concentration of 3%-5% for 950s-1050s and a soaking temperature of 23°-27°, and the glass substrate is placed in the HCl solution pool and shaken up and down 55-65 times / min.

[0016] Further, in the above description, in step 3, the glass substrate rinsed in step 2 is removed from the first water tank and placed in a first immersion KOH solution tank containing a KOH concentration of 4%-5% for immersion for 1480s-1520s at a immersion temperature of 23°-27°. The glass substrate is placed in the first immersion KOH solution tank and shaken up and down 55-65 times / min to neutralize the solution on the surface of the glass substrate, thereby pre-roughening the glass substrate.

[0017] Further in the above description, in step 4, a KOH solution in a second KOH solution immersion tank is prepared, a KOH solution with a mass percentage of 20%-30% is used, nano-silica particles with a particle size of 20 nm are added to the KOH solution in the second immersion tank, and the KOH solution is uniformly dispersed by an ultrasonic generator to obtain a uniform mixed KOH solution.

[0018] Further in the above description, the mixed KOH solution is heated to 85° by a heating device, the pH value of the mixed KOH solution is monitored in real time by a pH meter, and the pH value of the mixed KOH solution is adjusted to 13.5±0.1 according to the monitored pH value.

[0019] Further in the above description, the mixed KOH solution is uniformly diffused by an ultrasonic generator with a power density of 50 W / cm2, and the mixed KOH solution is stirred by a micro-stirrer with a rotation speed of 200 rpm. A sound intensity sensor is set to monitor the sound intensity changes in the mixed KOH solution in real time, and a high-speed camera system is used to detect cavitation bubbles in the mixed KOH solution. The ultrasonic power output is adjusted according to the sound intensity data, and the duration and frequency of the ultrasonic generator are adjusted and controlled.

[0020] Furthermore, the glass substrate is placed in a second KOH solution immersion tank by a lifting device, and the concentration of silicon ions in the mixed KOH solution is monitored in real time by an in-situ spectrometer, and the glass substrate is lifted out of the solution by the lifting device.

[0021] Furthermore, in the second rough soaking of step 4, the glass substrate is placed in a second KOH solution pool for soaking for 1480s-1520s, the soaking temperature is 23°-27°, and the glass substrate is shaken up and down 55-65 times / min to roughen the glass substrate.

[0022] Further in the above description, the cleaning in step five includes a first cleaning and a second cleaning. The first cleaning and the second cleaning and the rinsing in step two are all performed by overflow cleaning and spray cleaning. At the same time, the cleaned glass substrate is dried by a hot air drying device to ensure that there is no residual moisture on the surface of the glass substrate.

[0023] Further in the above description, after the surface of the glass substrate is roughened, it is scanned and observed by an atomic force microscope with a scanning range of 5μm×5μm to obtain the rough surface data of the glass substrate, and the surface roughness average deviation value and etch pit density are calculated by an image analysis algorithm.

[0024] The present invention has the following beneficial effects: by immersing the rinsed glass substrate in a first KOH solution tank for pre-roughening treatment, the roughness of the surface of the glass substrate can be preliminarily adjusted, making it more receptive to subsequent secondary roughening treatment, thereby improving the uniformity and controllability of the overall roughening effect; the glass substrate roughened by the first immersion is placed in a second KOH solution tank for secondary roughening treatment, and an ultrasonic generator is used to uniformly diffuse the KOH solution in the second KOH solution tank, thereby improving the contact uniformity between the solution and the surface of the glass substrate; at the same time, the KOH solution is stirred by a stirring device, so that the KOH solution in the second KOH solution tank can uniformly etch the glass substrate; further, the uniformity and stability of the KOH solution in the second KOH solution tank can be controlled, thereby improving the etching efficiency and quality of the roughening of the glass substrate;

[0025] By real-time monitoring of the cavitation bubble size distribution and silicon ion concentration in the KOH solution in the second KOH solution immersion pool, the ultrasonic generator can be adjusted, so that the KOH solution can have a more precise and uniform roughening effect on the glass substrate through ultrasound. By real-time monitoring and adjusting parameters, the processing process can be optimized according to actual conditions to avoid excessive or insufficient roughening, thereby improving the quality and consistency of the glass substrate roughening and enhancing the efficiency and quality of the roughening. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the overall process of this embodiment;

[0027] Figure 2 Schematic diagram of the process of step 4 in this embodiment; DETAILED DESCRIPTION

[0028] The present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

[0029] In this embodiment, refer to Figure 1-Figure 2 , a method for roughening the surface of a glass substrate is specifically implemented, the roughening method comprising the following steps:

[0030] Step 1: Soak to remove impurities. Soak the glass substrate in a HCl solution pool with a preset concentration to remove metal residues on the surface of the glass substrate. Soak the glass substrate in a HCl solution pool with a HCl concentration of 4% for 1000 seconds at a temperature of 25°. Place the glass substrate in the HCl solution pool and shake it up and down 60 times / min.

[0031] Step 2: Rinse. Take out the glass substrate after immersion in the HCL solution pool, place it in the first water tank, and perform multiple cycles of rinsing to remove metal ions and particles attached to the surface of the glass substrate; use overflow cleaning and spray cleaning, and the rinsing time is 800s.

[0032] Step 3: First pre-roughening soaking, soaking the rinsed glass substrate in a first soaking KOH solution tank for treatment to pre-roughen the surface of the glass substrate; taking the glass substrate rinsed in step 2 out of the first water tank, placing it in a first soaking KOH solution tank containing a KOH concentration of 4.3% for soaking, the soaking time is 1500 seconds, the soaking temperature is 25°, and the glass substrate is placed in the first soaking KOH solution tank and shaken up and down 60 times / min to neutralize the solution on the surface of the glass substrate, so that the glass substrate is pre-roughened.

[0033] Step 4: Second roughening soaking: The glass substrate immersed in the first KOH solution tank is taken out and placed in the second KOH solution tank for soaking to perform a secondary roughening treatment on the surface of the glass substrate. The KOH solution is evenly diffused by an ultrasonic generator and stirred by a stirring device. The cavitation bubble size distribution and silicon ion concentration in the KOH solution are monitored in real time. The ultrasonic generator parameters are adjusted according to the monitoring results, and the glass substrate is taken out of the KOH solution;

[0034] Step 5: Cleaning: The glass substrate after the secondary roughening treatment is taken out and placed in a second water tank for multiple rinses to remove the KOH solution and roughening particles remaining on the surface of the glass substrate; specifically, the first and second cleanings are performed by overflow cleaning and spray cleaning to clean the glass substrate.

[0035] Step 6: Drying: Place the rinsed glass substrate in a holding tank containing isopropyl alcohol, and dry the glass substrate through the Marangoni effect to complete the roughening of the surface of the glass substrate.

[0036] In step 4, a KOH solution in a second KOH solution immersion tank is prepared by using a KOH solution with a mass percentage of 20%-30%, adding nano-silica particles with a particle size of 20nm to the KOH solution in the second immersion tank, and uniformly dispersing the KOH solution by an ultrasonic generator to obtain a uniform mixed KOH solution.

[0037] The mixed KOH solution was heated to 85° by a heating device, and the pH value of the mixed KOH solution was monitored in real time using a pH meter. The pH value of the mixed KOH solution was adjusted to 13.5±0.1 according to the monitored pH value.

[0038] The mixed KOH solution was evenly diffused by an ultrasonic generator with a power density of 50 W / cm2. At the same time, the mixed KOH solution was stirred by a micro-stirrer with a rotation speed of 200 rpm. A sound intensity sensor was set to monitor the sound intensity changes in the mixed KOH solution in real time. A high-speed camera system was used to detect cavitation bubbles in the mixed KOH solution. The ultrasonic power output was adjusted according to the sound intensity data, and the duration and frequency of the ultrasonic generator were adjusted and controlled.

[0039] Specifically, in this embodiment, a high-speed camera system is used to perform real-time imaging of cavitation bubbles in a uniformly mixed solution to obtain bubble image data, and bubble contour information is extracted using an image segmentation algorithm. Based on the extracted bubble contour information, a geometric measurement algorithm is used to calculate the equivalent diameter of each bubble to obtain bubble size distribution data. The bubble size distribution data is processed using a statistical analysis algorithm to calculate the average bubble diameter value, and determine whether the average diameter reaches a set value. In this embodiment, the reference value is 50 microns.

[0040] When the average diameter reaches 40 microns, the sound intensity sensor is triggered to transmit the control signal to the ultrasonic generator; after receiving the control signal, the ultrasonic generator adjusts the ultrasonic frequency from 40 kHz to 60 kHz through the frequency modulation circuit to change the sound field conditions; the adjusted ultrasonic wave acts on the uniformly mixed solution, affecting the generation and collapse of bubbles in the solution through the acoustic cavitation effect; the sound intensity sensor is used to monitor the adjusted sound field in real time, obtain sound pressure distribution data, and analyze the uniformity of the sound field through the sound field simulation algorithm; according to the sound field uniformity analysis results, the power and phase of the ultrasonic generator are dynamically adjusted through the feedback control algorithm to achieve optimal control of the sound field; the optimized sound field continues to act on the uniformly mixed solution, and the bubble size distribution change trend is predicted through the bubble dynamics model, providing a basis for subsequent process parameter optimization.

[0041] For example, in one embodiment, a high-speed CMOS camera with a frame rate of 1000 frames per second is used to image a uniformly mixed solution, obtaining 8-bit grayscale image sequence data of 4096×3072 pixels. The image is binarized using the Otsu threshold segmentation algorithm, and the bubble outline pixel coordinate information is extracted. The minimum circumscribed circle diameter of the bubble is calculated based on the outline coordinates to obtain a bubble size distribution histogram. The arithmetic mean of the histogram is calculated using mathematical statistics methods. When the average diameter reaches 50 microns, a piezoelectric ceramic transducer with a frequency of 60 kHz and a power of 500 watts is triggered to adjust the ultrasonic frequency. An acoustic pressure sensor array is used to collect sound field spatial distribution data, and a sound pressure cloud map is drawn using a sound field visualization algorithm. The root mean square value of the sound pressure is calculated to evaluate the sound field uniformity. Based on the Levenberg-Marquardt optimization algorithm, the transducer drive voltage amplitude and phase are adjusted to minimize the root mean square value to achieve sound field uniformity optimization. The Rayleigh-Plesset equation is used to establish a bubble dynamics model, calculate the change of bubble radius at different times, predict the evolution law of bubble size distribution, and optimize process parameters such as ultrasonic frequency and power to synchronize the bubble rupture moment with the reaction process on the glass substrate surface, thereby improving the roughening efficiency and uniformity.

[0042] The glass substrate is placed in the second KOH solution immersion tank in a liftable manner by a lifting device. The change of silicon ion concentration in the mixed KOH solution is monitored in real time by an in-situ spectrum analyzer, and the glass substrate is lifted out of the solution by the lifting device.

[0043] Specifically, an in-situ spectrometer is used to monitor changes in silicon ion concentration in a uniformly mixed solution in real time to obtain silicon ion concentration data; the obtained silicon ion concentration data is compared with a preset threshold value of 0.5 mol per liter to determine whether the silicon ion concentration has reached the threshold; if the silicon ion concentration reaches 0.5 mol per liter, the automatic lifting device is triggered to control the lifting speed according to a preset speed parameter of 0.5 mm per second; the lifting displacement of the glass substrate is monitored in real time by a high-precision displacement sensor to obtain real-time position data of the glass substrate; based on the real-time position data of the glass substrate, the lifting speed of the automatic lifting device is dynamically adjusted to ensure that the glass substrate is slowly lifted out of the solution at a speed of 0.5 mm per second.

[0044] Exemplarily, an in-situ spectrometer is used to monitor in real time the change in silicon ion concentration in the uniformly mixed KOH solution, and silicon ion concentration data is obtained every 0.1 second. The obtained silicon ion concentration data is compared in real time with a preset threshold value of 0.5 mol per liter. By setting the judgment conditions, when the silicon ion concentration is detected to reach or exceed 0.5 mol per liter for three consecutive times, the automatic lifting device is triggered, and the lifting motor speed is controlled according to the preset speed parameter of 0.5 mm per second. The lifting displacement of the glass substrate is monitored in real time by a high-precision grating ruler, and 10 displacement data points are collected per millimeter. According to the real-time position data of the glass substrate, the PID control algorithm is used to dynamically adjust the lifting speed of the automatic lifting device to ensure that the lifting speed of the glass substrate is constant at 0.5±0.05 mm per second.

[0045] In step 4, during the second roughening soak, the glass substrate is placed in a second KOH solution bath for 1500 seconds at a temperature of 23°-27°, with the substrate shaken up and down 55-65 times / min to roughen the surface. Simultaneously, the cleaned glass substrate is dried using a hot air drying device to ensure no residual moisture remains on the surface.

[0046] After the surface of the glass substrate was roughened, it was scanned and observed using an atomic force microscope with a scanning range of 5 μm × 5 μm to obtain the rough surface data of the glass substrate. The average deviation value of the surface roughness and the etch pit density were calculated using an image analysis algorithm.

[0047] Specifically, in this embodiment, an atomic force microscope is used to obtain a height data matrix of the glass substrate surface; based on the obtained height data matrix, the surface topography image is segmented using an image segmentation algorithm to extract pit areas and flat areas; the segmented pit areas are marked using a connected domain analysis algorithm, and the number of pits is counted to obtain a pit density; based on the marked pit areas, geometric parameters such as the depth and diameter of each pit are calculated to obtain a pit topography distribution; the height data of the flat areas are statistically analyzed to calculate the arithmetic mean deviation of the height distribution to obtain a surface roughness value; the calculated pit density and surface roughness value are compared with preset thresholds. If both the pit density and roughness meet the requirements, the glass substrate surface treatment is determined to be qualified; if the pit density or roughness exceeds the preset range, the process returns to a second roughening soak for re-roughening, and the treated glass substrate surface is inspected online to monitor the surface quality in real time to ensure stability and consistency between batches.

[0048] For example, an atomic force microscope with a scanning range of 5 microns by 5 microns was used to scan the surface of a glass substrate, acquiring a 512×512 matrix of height data. The surface topography image was binarized using the Otsu threshold segmentation algorithm to extract pitted and flat areas. The pitted areas were labeled using an 8-neighborhood connected domain. The number of labeled areas was counted to determine the pit density per square millimeter. The maximum depth and equivalent diameter of each pitted area were calculated to generate a pit size distribution histogram. The arithmetic mean deviation (Ra) of the height data for the flat areas was calculated, resulting in a surface roughness of 80 nanometers. The pit density and roughness were compared to preset thresholds of 100 pits per square millimeter and 100 nanometers to determine if they met quality requirements. If they exceeded these limits, the potassium hydroxide concentration was adjusted from 25% to 30%, the ultrasonic power from 50 watts per square centimeter to 60 watts per square centimeter, and the treatment time was extended from 25 minutes to 30 minutes, based on the percentage of deviation. The optimized parameters were then transmitted to the automated dispensing system and ultrasonic generator for processing of the next batch of glass substrates. An industrial camera with a resolution of 1 micron is used to continuously capture images of the glass substrate surface, and a surface defect recognition algorithm is applied to detect pits and scratches in real time. The batch is considered qualified when the defect density is less than 80 per square millimeter for five consecutive pieces.

[0049] The specific implementation process of this embodiment is: after the glass substrate is processed through steps 1, 2, and 3, it is roughened through step 4.

[0050] In this embodiment, step 4: the second rough soaking specifically includes the following steps:

[0051] S401, preparing a mixed KOH solution. First, based on the type and concentration of metal impurities on the surface of the glass substrate, for example, an iron ion concentration of 0.02 mol / L and a copper ion concentration of 0.01 mol / L, a 25% mass fraction KOH solution is prepared by stoichiometric calculation. Nano-silica particles with a particle size of 20 nm and a surface area of ​​200 m2 / g are added, and the solution is dispersed using 40 kHz ultrasonic waves for 5 minutes to obtain a mixed KOH solution.

[0052] S402, heating, heating the mixed KOH solution to 85°C using a precision temperature control system, monitoring the pH value of the mixed KOH solution in real time using a high-precision pH meter, and adjusting the pH value to 13.5±0.1 using a PID control algorithm;

[0053] S403, stirring and mixing, immersing the glass substrate in a mixed KOH solution with a concentration of 25%, starting a timer, and uniformly mixing the mixed KOH solution using an ultrasonic wave with a power density of 50 W / cm2 and a stirrer with a rotation speed of 200 rpm;

[0054] S404, detection: A high-speed camera system monitors the cavitation bubble size distribution in real time. If the average diameter reaches 50 μm, the frequency of the ultrasonic generator is adjusted to 60 kHz. An in-situ spectrometer monitors the silicon ion concentration. When it reaches 0.5 mol / L, the glass substrate is lifted at a speed of 0.5 mm / s, thereby removing the glass substrate from the second KOH solution immersion tank.

[0055] Secondly, an atomic force microscope is used to scan a 5μm×5μm range of the glass substrate to obtain morphological data. The image analysis algorithm calculates the arithmetic mean deviation of the roughness and the etch pit density. If the deviation is less than 100nm and the etch pit density meets the requirements, otherwise, the process parameters are automatically optimized based on the deviation and etch pit density values, and the mixed KOH solution is adjusted to 30%, the ultrasonic power to 60W / cm2, and the time is extended by 10%. The process is then reprocessed until the roughness requirements are met.

[0056] After the secondary roughening treatment, the glass substrate is removed and placed in a second water tank for multiple rinses to remove the KOH solution and roughening particles remaining on the glass substrate surface. This includes a first rinse and a second rinse, both of which use overflow and spray cleaning to clean the glass substrate. The detailed steps are overflow with ultrapure water for 100 seconds, rapid drain and spray for 80 seconds, and this step is repeated 10 times to rinse the small roughening particles remaining on the surface.

[0057] The rinsed glass substrate was placed in a holding tank containing isopropyl alcohol (IPA dry) and dried by the Marangoni effect for 1100 seconds to complete the roughening of the surface of the glass substrate.

[0058] Specifically, the beneficial effects of this embodiment are as follows: 4% HCl is first used to effectively remove metal particle impurities from the glass substrate, thereby avoiding the risk of metal contamination and short circuit on the glass substrate; the glass substrate is pre-roughened by soaking in a 4.3% first immersion KOH solution pool; and the mixed KOH solution is then used to further etch the surface of the glass substrate to roughen the surface of the glass substrate, thereby ensuring the bonding tightness in the next mass transfer and pressing process and improving the roughening effect. Compared with the plasma dry surface roughening process, this wet surface roughening method reduces the process flow, saves production costs, and greatly improves manufacturing efficiency.

[0059] In summary, the present embodiment differs from the prior art in that: an ultrasonic generator is used to uniformly diffuse the KOH solution in the second KOH solution immersion tank, thereby improving the uniformity of contact between the solution and the surface of the glass substrate; at the same time, a stirring device is used to stir the KOH solution so that the KOH solution in the second KOH solution immersion tank can uniformly etch the glass substrate, further controlling the uniformity and stability of the KOH solution in the second KOH solution immersion tank, thereby improving the etching efficiency and quality of the glass substrate roughening; and the ultrasonic generator is adjusted by real-time monitoring of the cavitation bubble size distribution and silicon ion concentration in the KOH solution in the second KOH solution immersion tank, thereby ensuring that the mixed KOH solution has a more precise and uniform roughening effect on the glass substrate through ultrasonic waves; and an atomic force microscope is used to scan the glass substrate to obtain topography data, and an image analysis algorithm is used to calculate the arithmetic mean deviation of the roughness and the etch pit density to avoid excessive or insufficient roughening, thereby improving the quality and consistency of the glass substrate roughening and enhancing the efficiency and quality of the roughening.

[0060] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention is disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with this profession can make some changes or modifications to equivalent embodiments of equivalent changes by using the technical content disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technology of the present invention are all within the scope of the technical solution of the present invention without departing from the content of the technical solution of the present invention.

Claims

1. A method for roughening the surface of a glass substrate, characterized in that: The roughening method comprises the following steps: Step 1: Soak to remove impurities. Soak the glass substrate in a HCl solution pool with a preset HCl concentration of 3%-5% to remove metal residues on the surface of the glass substrate. Step 2: Rinse, take out the glass substrate after immersion in the HCL solution pool, place it in the first water tank, and perform multiple cycles of rinsing to remove metal ions and particles attached to the surface of the glass substrate; Step 3: First pre-roughening soaking, soaking the rinsed glass substrate in a first soaking KOH solution pool with a KOH concentration of 4%-5% to perform pre-roughening treatment on the surface of the glass substrate; Step 4: a second rough soaking, taking out the glass substrate soaked in the first soaking KOH solution pool, and placing the glass substrate in the second soaking KOH solution pool for soaking, performing a secondary roughening treatment on the surface of the glass substrate, using an ultrasonic generator to uniformly diffuse the KOH solution, and at the same time stirring the KOH solution by a stirring device, by real-time monitoring the cavitation bubble size distribution and the silicon ion concentration in the KOH solution, adjusting the ultrasonic generator parameters according to the monitoring results, and taking the glass substrate out of the KOH solution to prepare the KOH solution in the second soaking KOH solution pool, using a KOH solution with a mass percentage of 20%-30%, adding nano-silicon dioxide particles with a particle size of 20nm to the KOH solution in the second soaking pool, and uniformly dispersing the KOH solution by an ultrasonic generator to obtain a uniform mixed KOH solution, and heating the mixed KOH solution to 85°C by a heating device, using a pH meter to monitor the pH value of the mixed KOH solution in real time, and adjusting the pH value of the mixed KOH solution to 13.5±0.1 according to the monitored pH value; Step 5: Cleaning: taking out the glass substrate after the secondary roughening treatment and placing it in a second water tank for multiple rinses to remove the KOH solution and roughening particles remaining on the surface of the glass substrate; Step 6: Drying: Place the rinsed glass substrate in a holding tank containing isopropyl alcohol, and dry the glass substrate through the Marangoni effect to complete the roughening of the surface of the glass substrate.

2. The method for roughening the surface of a glass substrate according to claim 1, wherein: In the step 1, the glass substrate is immersed in a HCl solution pool for 950s-1050s at a temperature of 23°-27°, and the glass substrate is placed in the HCl solution pool and shaken up and down at 55-65 times / min.

3. The method for roughening the surface of a glass substrate according to claim 1, wherein: In the step 3, the glass substrate rinsed in the step 2 is removed from the first water tank and placed in a first KOH solution immersion tank for immersion for 1480 seconds to 1520 seconds at a temperature of 23° to 27°. The glass substrate is then shaken up and down in the first KOH solution immersion tank at a rate of 55 to 65 times per minute to neutralize the solution on the surface of the glass substrate, thereby pre-roughening the glass substrate.

4. The method for roughening the surface of a glass substrate according to claim 1, wherein: The mixed KOH solution is uniformly diffused by an ultrasonic generator with a power density of 50 W / cm2, and stirred by a micro-stirrer with a rotation speed of 200 rpm. A sound intensity sensor is provided to monitor the sound intensity changes in the mixed KOH solution in real time. A high-speed camera system is used to detect cavitation bubbles in the mixed KOH solution, and the ultrasonic power output is adjusted according to the sound intensity data, and the duration and frequency of the ultrasonic generator are adjusted and controlled.

5. The method for roughening the surface of a glass substrate according to claim 4, wherein: The glass substrate is placed in a second KOH solution immersion tank in a liftable manner by a lifting device. The concentration change of silicon ions in the mixed KOH solution is monitored in real time by an in-situ spectrum analyzer, and the glass substrate is lifted out of the solution by the lifting device.

6. A method for roughening a glass substrate surface according to any one of claims 1 to 5, characterized in that: In the second rough soaking of step 4, the glass substrate is placed in the second soaking KOH solution pool for soaking, the soaking time is 1480s-1520s, the soaking temperature is 23°-27°, and the glass substrate is shaken up and down 55-65 times / min to roughen the glass substrate.

7. A method for roughening a glass substrate surface according to any one of claims 1 to 5, characterized in that: The cleaning in step five includes a first cleaning and a second cleaning. The first cleaning, the second cleaning and the rinsing in step two are all performed by overflow cleaning and spray cleaning. At the same time, the cleaned glass substrate is dried by a hot air drying device to ensure that there is no residual moisture on the surface of the glass substrate.

8. The method for roughening the surface of a glass substrate according to claim 7, wherein: After the surface of the glass substrate is roughened, it is scanned and observed by an atomic force microscope with a scanning range of 5 μm×5 μm to obtain rough surface data of the glass substrate, and the surface roughness average deviation value and etch pit density are calculated by an image analysis algorithm.

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