A true random number generator based on photoelectric coordinated memristor and its preparation method

Abstract

The present invention discloses a true random number generator based on a photoelectrically controlled memristor and a preparation method. The true random number generator comprises: a photoelectrically controlled memristor, an illumination control module, a pulse generation module, and a monitoring module. The illumination control module is configured to provide illumination to the photoelectrically controlled memristor under the control of the monitoring module. The pulse generation module is configured to provide a preset pulse signal to the photoelectrically controlled memristor. When illumination is present or illumination meets preset conditions, the photoelectrically controlled memristor generates random numbers based on the preset pulse signal, using the on / off state of the conductive channel in the resistive switching layer as a random entropy source. When illumination is absent or illumination does not meet the preset conditions, random number generation ceases. The monitoring module monitors the random numbers output by the photoelectrically controlled memristor and, if the same random number is output multiple times in a row, sends a control signal to the illumination control module to cause it to turn off illumination or provide illumination that does not meet the preset conditions. The present invention can implement self-testing and on / off control of the true random number generator.

Description

Technical Field

[0001] The present invention belongs to the field of microelectronics technology, and in particular relates to a true random number generator based on a photoelectric coordinated memristor and a preparation method thereof. Background Art

[0002] With the rapid development of mobile computing and the Internet of Things, protecting information security has become crucial. Random numbers play a vital role in security and encryption. Traditional pseudo-random number generators (PRNGs) generate random numbers based on deterministic algorithms and predictable physical processes, resulting in poor reliability. True random number generators, on the other hand, use truly random physical processes or phenomena in nature as their source of random entropy and offer exceptional security.

[0003] In recent years, memristors have been widely used in the electronics field due to their simple structure, high storage density, and fast switching speed. The residual instability of the broken conductive filaments during the memristor's RESET process leads to a strong randomness in the SET process, which has great potential for application in true random number generators.

[0004] The true random number generator based on memristor has the advantages of fast speed, low power consumption, and high integration. However, the strong randomness left by the broken conductive wires inside the resistive layer also exacerbates the instability of its generated random numbers. It is easy to experience unidirectional changes as the number of cycles increases, causing the true random number generator to fail, which reduces the stability and reliability of the device's parallel operation.

[0005] Therefore, how to prevent the failure of memristors from affecting the quality of random number sequences generated by true random number generators has become an urgent problem to be solved. Summary of the Invention

[0006] In order to solve the above problems existing in the prior art, the present invention provides a true random number generator based on a photoelectric coordinated memristor and a preparation method thereof.

[0007] The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0008] The present invention provides a true random number generator based on a photoelectrically coordinated memristor, comprising: a photoelectrically coordinated memristor, a light control module, a pulse generation module, and a monitoring module; wherein the photoelectrically coordinated memristor is electrically connected to the pulse generation module and the monitoring module, respectively, and the monitoring module is also electrically connected to the light control module;

[0009] The illumination control module is configured to provide illumination for the photoelectrically coordinated memristor according to the control of the monitoring module;

[0010] The pulse generating module is used to provide a preset pulse signal to the photoelectric cooperatively controlled memristor;

[0011] The photoelectrically coordinated memristor is configured to generate random numbers based on the preset pulse signal using the on / off state of the resistive layer's conductive channel as a random entropy source when there is light or the light meets a preset condition, and to stop generating random numbers when there is no light or the light does not meet the preset condition;

[0012] The monitoring module is used to monitor the random number output by the photoelectric cooperative memristor, and when the photoelectric cooperative memristor outputs the same random number multiple times in a row, send a control signal to the lighting control module to cause the lighting control module to turn off the lighting or provide lighting that does not meet the preset conditions.

[0013] The present invention also provides a method for preparing a photoelectrically coordinated memristor, which is used to prepare the photoelectrically coordinated memristor in the true random number generator based on the photoelectrically coordinated memristor as described above, the method comprising:

[0014] S1. Prepare substrate;

[0015] S2, forming a SiO2 thin film layer on the substrate;

[0016] S3, preparing a photosensitive material layer, and transferring the prepared photosensitive material layer onto the SiO2 thin film layer to form a light modulation layer;

[0017] S4, depositing a resistive material layer on the SiO2 thin film layer and forming it into a desired shape by photolithography to form a first resistive layer and a second resistive layer respectively located on both sides of the light modulation layer;

[0018] S5. Prepare a drain terminal and a source terminal on the SiO2 thin film layer.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] The present invention enables the photoelectric cooperative memristor in the true random number generator to generate random numbers according to a provided preset pulse signal when there is light or the light meets a preset condition, and to stop generating random numbers when there is no light or the light does not meet the preset condition. At the same time, the random numbers generated by the photoelectric cooperative memristor are monitored, and when the photoelectric cooperative memristor outputs the same random number multiple times in a row, the photoelectric cooperative memristor is considered to be invalid. At this time, the photoelectric cooperative memristor is stopped from working by controlling the light to be turned off or making the light not meet the preset condition, so that the true random number generator stops outputting random numbers. Otherwise, the photoelectric cooperative memristor is kept working, so that the true random number generator continues to output random numbers normally. In this way, real-time self-checking of the true random number generator can be achieved, and the true random number generator is automatically shut down when the quality of the random numbers output by the true random number generator decreases, thereby improving the stability, reliability and throughput of the true random number generator and facilitating device integration. In addition, since the photoelectric cooperative memristor operates according to the lighting conditions, the potential barrier of the photoelectric cooperative memristor can be adjusted by changing the light intensity to reduce the voltage required for the photoelectric cooperative memristor to operate, thereby ultimately reducing the power consumption of the photoelectric cooperative memristor.

[0021] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 1 is a schematic structural diagram of a true random number generator based on a photoelectrically coordinated memristor provided in an embodiment of the present invention;

[0023] Figure 2 This is a model diagram of the photoelectric cooperatively controlled memristor provided by an embodiment of the present invention;

[0024] Figure 3 is a vertical cross-sectional view along the center line of the optoelectronic coordinated memristor provided by an embodiment of the present invention;

[0025] Figure 4 This is a schematic diagram of a preparation process of a photoelectric cooperatively controlled memristor provided by an embodiment of the present invention;

[0026] Figure 5 This is another schematic diagram of the preparation process of the photoelectric cooperatively controlled memristor provided by an embodiment of the present invention;

[0027] Figure 6 1 is a working principle diagram of a true random number generator based on a photoelectrically coordinated memristor provided by an embodiment of the present invention;

[0028] Figure 7 This is a flow chart of a method for generating random numbers using a memristor provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0029] The present invention will be further described in detail below with reference to specific examples, but the embodiments of the present invention are not limited thereto.

[0030] Figure 1 is a structural diagram of a true random number generator based on a photoelectric cooperatively controlled memristor provided by an embodiment of the present invention, such as Figure 1 As shown, the true random number generator includes: a photoelectrically controlled memristor, an illumination control module, a pulse generation module, and a monitoring module. The photoelectrically controlled memristor is electrically connected to the pulse generation module and the monitoring module, respectively, and the monitoring module is also electrically connected to the illumination control module. The illumination control module is configured to provide illumination to the photoelectrically controlled memristor under the control of the monitoring module. The pulse generation module is configured to provide a preset pulse signal to the photoelectrically controlled memristor. The photoelectrically controlled memristor is configured to generate random numbers based on the preset pulse signal, using the on / off state of the conductive channel in the resistive switching layer as a random entropy source, when illumination is present or illumination meets preset conditions. It also stops generating random numbers when illumination is absent or illumination does not meet preset conditions. The monitoring module is configured to monitor the random numbers output by the photoelectrically controlled memristor and, if the photoelectrically controlled memristor outputs the same random number multiple times in a row, send a control signal to the illumination control module to disable illumination or provide illumination that does not meet preset conditions.

[0031] Here, the preset condition is a light condition that enables the photoelectric cooperative memristor to operate. For example, the preset condition may be a light intensity threshold and a wavelength that can lower the barrier of the photosensitive material in the photoelectric cooperative memristor to reduce the operating voltage of the photoelectric cooperative memristor. Thus, when the wavelength of the output light is the wavelength, when the provided light intensity is greater than or equal to the light intensity threshold, the photoelectric cooperative memristor can operate, and when the provided light intensity is less than the light intensity threshold, the photoelectric cooperative memristor stops operating. The preset condition here may also be other light conditions that enable the photoelectric cooperative memristor to operate, and the present invention is not limited to the preset condition.

[0032] In some embodiments, for the monitoring module, if it is detected that the photoelectric cooperative memristor outputs the same random number multiple times in a row, a control signal to turn off the light can be sent to the light control module, so that the light control module can directly turn off the light to stop the photoelectric cooperative memristor from working, or a control signal to weaken the light can be sent to the light control module, so that the light control module can weaken the light without changing the wavelength to stop the photoelectric cooperative memristor from working.

[0033] In some embodiments, a photoelectrically coordinated memristor includes: a horizontally arranged drain terminal, a first resistive layer, an optical modulation layer, a second resistive layer, and a source terminal; wherein the optical modulation layer is located between the first and second resistive layers; the drain terminal and the source terminal are respectively located at ends of the first and second resistive layers away from the optical modulation layer; the optical modulation layer is configured to be insulated when there is no light or when the light does not meet preset conditions, and to be conductive when there is light or when the light meets preset conditions. Specifically, the pulse generation module is electrically connected to one of the drain terminal and the source terminal of the photoelectrically coordinated memristor, and the monitoring module is electrically connected to the other of the drain terminal and the source terminal of the photoelectrically coordinated memristor.

[0034] Specifically, the optical modulation layer controls the memristor's on / off state. Under specific illumination conditions, the optical modulation layer conducts. When a voltage is applied to the drain terminal, both the first and second resistive switching layers form a conductive channel, turning the memristor on. In the absence of illumination, or when illumination conditions do not meet specific requirements, the optical modulation layer becomes insulated. Even when a voltage is applied to the drain terminal, the second resistive switching layer cannot form a conductive channel, turning the memristor off. Furthermore, by adjusting parameters such as the frequency and intensity of the applied illumination, the channel barrier can be lowered, reducing the device's operating voltage and further reducing power consumption.

[0035] In some embodiments, the photoelectrically coordinated memristor includes a drain terminal, a first resistive switching layer, a light modulation layer, a second resistive switching layer, and a source terminal, and further includes a SiO2 thin film layer and a substrate. For example, the substrate can be a Si substrate. For example, Figure 2 and Figure 3 Figure 2 is a schematic diagram of the structure of the photoelectric cooperative memristor of the present invention. Figure 2 and Figure 3 As shown, the SiO2 thin film layer 2 is located on one side of the substrate 1, and the drain terminal 3, the first resistive layer 5, the optical modulation layer 7, the second resistive layer 6 and the source terminal 4 are horizontally distributed on the side of the SiO2 thin film layer 2 away from the substrate 1.

[0036] In some embodiments, as Figure 3 As shown, the ends of the first resistive layer 5 and the second resistive layer 6, away from the optical modulation layer 7, are respectively embedded in the drain terminal 3 and the source terminal 4. That is, the drain terminal 3 partially covers the first resistive layer 5 and is partially in direct contact with the SiO2 thin film layer, and the source terminal 4 partially covers the second resistive layer 6 and is partially in direct contact with the SiO2 thin film layer. This increases the contact area between the electrode and the resistive layer, thereby improving the controllability and durability of the memristor and reducing its power consumption.

[0037] In some embodiments, the material of the light modulation layer 7 is a photosensitive material. For example, the material of the light modulation layer 7 is any one of MoS2, CdS, and TiO2. Exemplarily, the material of the light modulation layer 7 is MoS2.

[0038] In some embodiments, the first resistive layer 5 and the second resistive layer 6 are both made of metal oxide materials or perovskite materials. For example, the metal oxide material is Ta2O5, WO3, ZnO, or Al2O3, or the perovskite material is (CH3NH3)2InCl3 or CsSn(Br / Cl)3. Exemplarily, the material of the first resistive layer 5 and the second resistive layer 6 is Ta2O5.

[0039] In the present invention, the drain terminal 3 and the source terminal 4 are made of metal materials, for example, one or two of Ti, W, Ni, Co, Al, Ag, Pt, and Cu. Exemplarily, the drain terminal 3 is made of Ag, and the source terminal 4 is made of W.

[0040] In some embodiments, in the vertical direction, the thickness of the Si substrate 1 is in the range of 50-200 μm, and the thickness of the SiO2 film 2 is in the range of 50 nm-2 μm. For example, the thickness of the Si substrate 1 is in the range of 100 μm, and the thickness of the SiO2 film 2 is in the range of 1 μm.

[0041] In some embodiments, in the horizontal direction, the optical modulation layer 7 has a length ranging from 4 to 6 μm, and the lengths of the first resistive switching layer 5 and the second resistive switching layer 6 are both 2 to 3 μm. For example, the optical modulation layer 7 has a length of 5 μm, and the lengths of the first resistive switching layer 5 and the second resistive switching layer 6 are both 2.5 μm.

[0042] In some embodiments, the channel formed by the first resistive layer 5, the optical modulation layer 7, and the second resistive layer 6 has a horizontal length ranging from 8 to 12 μm and a width ranging from 3 to 5 μm. In the vertical direction, the channel has a thickness ranging from 40 to 60 nm. For example, the channel formed by the first resistive layer 5, the optical modulation layer 7, and the second resistive layer 6 has a thickness of 50 nm, a width of 4 μm, and a length of 10 μm.

[0043] In some embodiments, in the vertical direction, the drain terminal 3 and the source terminal 4 have a thickness ranging from 80 to 100 nm, a width ranging from 4 to 6 μm, and a length ranging from 4 to 6 μm. For example, the drain terminal 3 and the source terminal 4 have a thickness of 80 nm, a width of 5 μm, and a length of 5 μm.

[0044] In some embodiments, the widths of the drain terminal 3 and the source terminal 4 are greater than the width of the channel formed by the first resistive layer 5 , the optical modulation layer 7 and the second resistive layer 6 .

[0045] In some embodiments, the first resistive layer 5 and the second resistive layer 6 are embedded in the drain terminal 3 and the source terminal 4 to a length of 1-2 μm. For example, the first resistive layer 5 and the second resistive layer 6 are embedded in the drain terminal 3 and the source terminal 4 to a length of 1.5 μm.

[0046] The present invention also provides a method for preparing a photoelectric cooperatively controlled memristor, which is used to prepare the above-mentioned photoelectric cooperatively controlled memristor, and the method comprises:

[0047] S1. Prepare substrate;

[0048] S2, forming a SiO2 thin film layer on the substrate;

[0049] S3, preparing a photosensitive material layer, and transferring the prepared photosensitive material layer onto the SiO2 thin film layer to form a light modulation layer;

[0050] S4, depositing a resistive material layer on the SiO2 thin film layer and forming it into a desired shape by photolithography to form a first resistive layer and a second resistive layer respectively located on both sides of the light modulation layer;

[0051] S5. Prepare a drain terminal and a source terminal on the SiO2 thin film layer.

[0052] For example, the following will be Figure 4 and Figure 5 Taking the photosensitive material layer as MoS2 as an example, the preparation process is described in detail. Figure 4 and Figure 5 As shown, the preparation method comprises:

[0053] S10, prepare a Si substrate.

[0054] The thickness of the Si substrate is 50-200um. The Si wafer is thoroughly cleaned to remove surface impurities and contaminants, including cleaning and rinsing before entering the furnace.

[0055] S20, thermally oxidizing the substrate surface to form a SiO2 film.

[0056] A cleaned silicon substrate is placed in a thermal oxidation furnace for a thermal oxidation process to form a silicon dioxide film on the surface of the silicon wafer. The temperature is controlled within the range of 900-1200°C, the oxygen flow rate is 50-200 sccm, and the oxygen pressure is 1-5 Torr. The thermal oxidation process lasts for 30 minutes to 2 hours to form a uniform silicon dioxide film. After the thermal oxidation is complete, the silicon substrate is removed from the thermal oxidation furnace and allowed to cool naturally to room temperature.

[0057] It should be noted that excessively high thermal oxidation temperatures, excessive oxygen flow rates, and excessive oxygen pressures can lead to uneven silicon dioxide film thickness and reduced quality. Therefore, appropriate parameters should be selected. For example, the thermal oxidation temperature is around 1000°C, the oxygen flow rate is 200 sccm, the oxygen pressure is 2 Torr, and the thermal oxidation time is 1 hour.

[0058] It should be noted that after thermal oxidation, the SiO2 film needs to be pretreated to ensure it is free of contamination, dryness, and moisture. Wet cleaning (such as ultrasonic cleaning) and dry cleaning (such as plasma cleaning) can be used to remove organic matter, particles, and contaminants on the surface of the SiO2 film. Finally, a drying operation is performed.

[0059] S30, multilayer MoS2 was transferred onto SiO2 substrate using micromechanical exfoliation method, with MoS2 layer thickness of 40-60nm, length of 4-6um, and width of 3-5um.

[0060] Micromechanical exfoliation is a high-precision exfoliation technique for exfoliating two-dimensional materials such as MoS2.

[0061] First, high-quality multilayer MoS2 is obtained through mechanical cutting or liquid-phase exfoliation. The resulting MoS2 sample is placed on a clean coverslip for micromechanical exfoliation. Before exfoliation, ensure the workbench is clean and dust-free, using high-purity Ar gas or a vacuum environment to reduce airborne contaminants. The SiO2 substrate is placed in a suitable position, and the substrate surface must also be clean and flat. Using a microscope and a mechanical tool (such as the tip of an atomic force microscope (AFM)), gently tap or scratch the surface of the MoS2 sample. Through slight mechanical force, the layered MoS2 is exfoliated due to the weak van der Waals forces between the layers. The force and speed of the tip are controlled to avoid damaging the MoS2 layers. The sample can be observed in real time during the exfoliation process to ensure the effectiveness of the exfoliation. Once the desired MoS2 layer is exfoliated, it is immediately transferred to a SiO2 substrate. The MoS2 layer is placed on the SiO2 substrate through simple mechanical contact and gently pressed to adhere. The MoS2 layer is fixed to the SiO2 substrate using intermolecular forces or a light adhesive (such as a coupling agent or polymer solution). The exfoliated MoS2 layer is dried in a vacuum desiccator to remove any residual solvent or moisture. Finally, post-processing is performed to inspect the exfoliated and transferred sample to confirm the quality and position of the MoS2 layer. If necessary, further processing such as cleaning and etching is performed. The MoS2 light modulation layer is finally obtained.

[0062] S40: Depositing a metal oxide resistive material layer with the same thickness as the MoS2 layer on the SiO2 film. The resistive material can be any of Ta2O5 and TiO2. Photolithography is used to form the desired shape.

[0063] A Ta2O5 layer of the same thickness as the MoS2 layer in S30 is deposited using ion beam sputtering or magnetron sputtering, followed by drying to ensure the stability of the Ta2O5 layer during the photolithography process. A layer of photoresist is applied over the SiO2 film, MoS2 layer, and deposited Ta2O5 film. The photoresist is evenly applied to the sample surface using spin coating, spray coating, or drop coating. The photoresist-coated sample is placed in a pre-bake apparatus to remove solvent from the photoresist and enhance adhesion between the photoresist and the SiO2 and Ta2O5 films. The photoresist-coated sample is then photolithographically processed using a UV lithography machine or an electron beam lithography machine. Based on the dimensional parameters of the first and second resistive switching layers, appropriate photolithographic patterns and parameters are selected, leaving two identically shaped photoresist blocks, each 2-3 μm long and with the same width as the MoS2 layer, adjacent to the MoS2 layer. The photolithographically processed sample is then placed in a developer to remove any Ta2O5 film not covered by the photoresist. Finally, the sample is subjected to hardening, post-baking and photoresist stripping operations to obtain the first resistive switching layer and the second resistive switching layer of desired shapes.

[0064] S50, preparing the drain end and the source end through a lift-off process to obtain a photoelectric cooperatively controlled memristor.

[0065] The lift-off process is a microelectronics manufacturing technology that is mainly used to produce tiny metal or insulating film patterns.

[0066] First, the sample is coated with photoresist. A photolithography machine is then used to expose the photoresist at the drain and source electrodes to ultraviolet light, causing crosslinking and hardening. The unexposed photoresist at the electrode locations remains softened. The exposed substrate is placed in a developer to remove the unexposed photoresist, revealing the pattern on the substrate surface. A metal electrode material is deposited to a thickness of 80-100 nm using thermal evaporation on the developed substrate, followed by post-baking to improve the adhesion and stability of the electrode material. The substrate is then immersed in a stripping solution to dissolve and remove the photoresist. Simultaneously, the electrode material deposited on the substrate is also lifted off, leaving the desired pattern. Finally, the substrate is cleaned and inspected to produce the optoelectronically coordinated memristor.

[0067] In some embodiments, the illumination control module can provide illumination of a preset intensity and a preset wavelength, and the values ​​of the preset intensity and the preset wavelength can be set according to actual needs. The present invention is not limited to this. For example, the illumination control module can provide ultraviolet light with a wavelength of 200 nm.

[0068] In some embodiments, the pulse generating module can alternately output a preset positive voltage signal and a random negative voltage signal that varies within a preset range, and the size of the positive voltage signal and the size of the preset range can be set according to actual needs. The present invention does not limit this. For example, the pulse generating module can alternately output a positive voltage of 2V and a negative voltage of a random size within the range of 1.5-2.5V, so that the photoelectric co-controlled memristor can complete the SET operation through the positive voltage and complete the RESET operation through a random negative voltage within the voltage range. The present invention avoids the problem of the SET voltage decreasing with the increase of the cycle test due to incomplete breakage of the conductive filament by applying a random negative voltage that varies within a certain range to the photoelectric co-controlled memristor during the RESET process of the photoelectric co-controlled memristor.

[0069] Figure 6 This is the working principle diagram of the true random number generator based on the photoelectric cooperative memristor; Figure 7 This is a schematic diagram of the method of generating random numbers by photoelectrically controlled memristor. Figure 6 As shown, before the true random number generator starts working, it is necessary to set the parameters of the illumination control module and the pulse generation module to input appropriate voltage and illumination to the photoelectric cooperative memristor module. For example, the illumination provided by the illumination control module is ultraviolet light with a wavelength of 200nm, and the pulse voltage output by the pulse generation module is a positive voltage of 2V and a negative voltage of a random size between 1.5-2.5V. After completing the parameter setting, the above-mentioned pulse voltage is applied to the drain end of the photoelectric cooperative memristor. Specifically, a 2V positive voltage is first applied to the photoelectric cooperative memristor to enable the photoelectric cooperative memristor to complete the SET operation, and then a negative voltage of a random size between 1.5-2.5V is applied to enable the photoelectric cooperative memristor to complete the RESET operation, and then a 2V positive voltage is applied to enable the photoelectric cooperative memristor to complete the SET operation, and the above operation is repeated. For a memristor, such as Figure 7As shown, the moment when the pulse generation module starts to provide the pulse voltage is t=0. At t1, when the pulse generation module outputs a high-level pulse signal, and if the memristor has completed the SET operation at this time, the memristor starts to output the set limited current. The output signal is amplified by the amplifier and input into the logic "AND" gate together with the high-level pulse signal generated by the signal generator. At this time, the output of the "AND" gate is 1; on the contrary, if the memristor has not completed the SET operation at t1, the output of the "AND" gate is 0, and the above steps are repeated to complete the generation of random numbers. It should be noted that the time interval between 0 and t1 can be obtained through testing. For example, in one embodiment of the present invention, 784 SET operations are performed on the photoelectric cooperative memristor. Among the 784 sets of SET completion time data obtained by the test, the maximum value is 1.484s and the minimum value is 1.025s. The middle value of the two, 1.255s, is taken as t1. Continue to refer to Figure 6 The random numbers generated by the memristor are tested by the monitoring module to detect whether the memristor has failed. If the random numbers generated by the memristor are of qualified quality (i.e., the output levels are different multiple times in a row), the random number sequence is output normally. If the same level is output repeatedly, the memristor is considered to have failed. In this case, the monitoring module controls the light control module to turn off the light or reduce the output light to shut down the memristor, thus stopping random number generation.

[0070] Exemplarily, the monitoring module may be a sequence detector. If the monitoring module detects that the memristor outputs 10 high levels continuously or 10 low levels continuously, it may be considered that the memristor has failed.

[0071] The present invention enables the photoelectric cooperative memristor in the true random number generator to generate random numbers according to a provided preset pulse signal when there is light or the light meets a preset condition, and to stop generating random numbers when there is no light or the light does not meet the preset condition. At the same time, the random numbers generated by the photoelectric cooperative memristor are monitored, and when the photoelectric cooperative memristor outputs the same random number multiple times in a row, the photoelectric cooperative memristor is considered to be invalid. At this time, the photoelectric cooperative memristor is stopped from working by controlling the light to be turned off or making the light not meet the preset condition, so that the true random number generator stops outputting random numbers. Otherwise, the photoelectric cooperative memristor is kept working, so that the true random number generator continues to output random numbers normally. In this way, real-time self-checking of the true random number generator can be achieved, and the true random number generator is automatically shut down when the quality of the random numbers output by the true random number generator decreases, thereby improving the stability, reliability and throughput of the true random number generator and facilitating device integration. In addition, since the photoelectric cooperative memristor operates according to the lighting conditions, the potential barrier of the photoelectric cooperative memristor can be adjusted by changing the light intensity to reduce the voltage required for the photoelectric cooperative memristor to operate, thereby ultimately reducing the power consumption of the photoelectric cooperative memristor.

[0072] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0073] In the description of this specification, the reference terms "one embodiment," "some embodiments," "example," "specific example," or "some examples" mean that the specific features or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features or characteristics described can be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

[0074] In the specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple situations. Certain measures are recorded in different embodiments, but this does not mean that these measures cannot be combined to produce good results.

[0075] The above is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention should not be considered to be limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

Claims

1. A true random number generator based on a photoelectrically controlled memristor, characterized in that: include: A photoelectrically controlled memristor, a light control module, a pulse generation module, and a monitoring module; wherein the photoelectrically controlled memristor is electrically connected to the pulse generation module and the monitoring module respectively, and the monitoring module is also electrically connected to the light control module; The illumination control module is configured to provide illumination for the photoelectrically coordinated memristor according to the control of the monitoring module; The pulse generating module is used to provide a preset pulse signal to the photoelectric cooperatively controlled memristor; The photoelectrically coordinated memristor is configured to generate random numbers based on the preset pulse signal using the on / off state of the resistive layer's conductive channel as a random entropy source when there is light or the light meets a preset condition, and to stop generating random numbers when there is no light or the light does not meet the preset condition; The monitoring module is configured to monitor the random number output by the photoelectrically coordinated memristor and, when the photoelectrically coordinated memristor outputs the same random number multiple times in a row, send a control signal to the illumination control module to cause the illumination control module to turn off illumination or provide illumination that does not meet the preset condition; The photoelectrically coordinated memristor comprises: a horizontally arranged drain terminal, a first resistive switching layer, an optical modulation layer, a second resistive switching layer, and a source terminal; wherein the optical modulation layer is located between the first resistive switching layer and the second resistive switching layer; the drain terminal and the source terminal are respectively located at one end of the first resistive switching layer and the second resistive switching layer away from the optical modulation layer; the optical modulation layer is configured to be insulated when there is no light or the light does not meet the preset condition, and to be conductive when there is light or the light meets the preset condition; The pulse generation module is electrically connected to one of the drain terminal or the source terminal of the photoelectric cooperatively controlled memristor, and the monitoring module is electrically connected to the other of the drain terminal or the source terminal of the photoelectric cooperatively controlled memristor.

2. The true random number generator based on the photoelectric cooperative memristor according to claim 1, characterized in that: The photoelectric cooperatively controlled memristor further comprises: a SiO2 thin film layer and a substrate; The SiO2 thin film layer is located on one side of the substrate; The drain terminal, the first resistive layer, the light modulation layer, the second resistive layer and the source terminal are horizontally distributed on a side of the SiO2 thin film layer away from the substrate.

3. The true random number generator based on the optoelectronic coordinated memristor according to claim 1, characterized in that: The material of the light modulation layer is a photosensitive material.

4. The true random number generator based on the optoelectronic coordinated memristor according to claim 1, characterized in that: Ends of the first resistive layer and the second resistive layer away from the light modulation layer are respectively buried in the drain end and the source end.

5. The true random number generator based on photoelectric cooperative memristor according to claim 1, characterized in that: The first resistive switching layer and the second resistive switching layer are both made of metal oxide material or perovskite material.

6. The true random number generator based on photoelectric coordinated memristor according to claim 1, characterized in that: In the horizontal direction, the length of the optical modulation layer is in the range of 4-6 μm, and the lengths of the first resistive switching layer and the second resistive switching layer are both in the range of 2-3 μm.

7. The true random number generator based on photoelectric coordinated memristor according to claim 1, characterized in that: The channel formed by the first resistive layer, the optical modulation layer and the second resistive layer has a length range of 8-12 μm in the horizontal direction, a width range of 3-5 μm, and a thickness range of 40-60 nm in the vertical direction.

8. The true random number generator based on photoelectric coordinated memristor according to claim 1, characterized in that: The illumination control module is specifically used to provide illumination of a preset intensity and a preset wavelength; the pulse generation module is specifically used to alternately output a preset positive voltage signal and a random negative voltage signal that varies within a preset range.

9. A method for preparing a photoelectric coordinated memristor, characterized in that: The method for preparing the optoelectronically coordinated memristor in the true random number generator based on the optoelectronically coordinated memristor according to any one of claims 1 to 8 comprises: S1. Prepare substrate; S2, forming a SiO2 thin film layer on the substrate; S3, preparing a photosensitive material layer, and transferring the prepared photosensitive material layer onto the SiO2 thin film layer to form a light modulation layer; S4, depositing a resistive material layer on the SiO2 thin film layer and forming it into a desired shape by photolithography to form a first resistive layer and a second resistive layer respectively located on both sides of the light modulation layer; S5. Prepare a drain terminal and a source terminal on the SiO2 thin film layer.

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