Illumination adjustment apparatus and lithographic apparatus

Abstract

An illumination adjustment apparatus includes a plate, an actuator, and a finger structure. The actuator includes a coil disposed on the plate. The finger structure comprises a beryllium alloy material. A plurality of the finger structures are coupled to a corresponding one of the actuators via a magnet. The finger structures are independently moved using the actuator, disposed at least partially in a path of a radiation beam to intercept at least a portion of the beam, and adjust an intensity cross-section of the beam based on the movement and the interception.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. application No. 63 / 406,992, filed on September 15, 2022, and the entire contents of that U.S. application are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to illumination systems, such as illumination adjustment systems for adjusting the cross-sectional intensity of an illumination beam used in lithographic apparatus and systems. Background Art

[0004] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, typically onto a target portion of the substrate. A lithographic apparatus may be used, for example, in the manufacture of integrated circuits (ICs). In that case, a patterning device (which may be a mask or reticle) may be used to produce a circuit pattern to be formed on a single layer of the IC. This pattern may be transferred onto a target portion (e.g., a portion including a die, a die, or several dies) on a substrate (e.g., a silicon wafer). The transfer of the pattern is typically performed via imaging onto a layer of radiation-sensitive material (resist or simply "resist") disposed on the substrate. Typically, a single substrate will include a network of adjacent target portions that are patterned successively. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing the entire pattern onto the target portion at once; and so-called scanners, in which each target portion is irradiated by scanning the pattern via a radiation beam in a given direction (the "scanning" direction) while simultaneously scanning the target portion parallel or antiparallel to such a scanning direction. It is also possible to transfer a pattern from a patterning device to a substrate by imprinting the pattern onto the substrate.

[0005] Another lithography system is an interference lithography system, in which there is no patterning device, but the beam is split into two beams and the two beams are caused to interfere at a target portion of the substrate using a reflection system. The interference is such that a line will be formed at the target portion of the substrate.

[0006] The lithographic apparatus typically includes an illumination system that conditions the radiation generated by a radiation source before it is incident on a pattern forming device. For example, the illumination system may modify one or more properties of the radiation, such as polarization and / or illumination pattern. The illumination system may include a uniformity correction system that corrects or reduces non-uniformities (e.g., intensity non-uniformities) present in the radiation. The uniformity correction device may employ an actuated finger that is inserted into the edge of the radiation beam to correct for intensity variations. The spatial extent of the illumination that can be adjusted by the uniformity correction system depends, among other things, on the size of the finger and the size of the actuating device used to move the finger in the uniformity correction system. Modifying the finger size according to a known working design is not trivial, as such a modification may result in an undesirable change in one or more properties of the radiation beam, such as a pupil formed by the radiation beam.

[0007] In order to achieve high quality pattern transfer to a substrate, it is desirable to control the cross-sectional intensity of the radiation beam to correct for errors in the radiation dose. The problem is that the radiation beam can have an inconsistent intensity distribution. It is desirable for the photolithography process to have a controllable radiation beam so that improved uniformity can be achieved. The patterning device imparts a pattern to the radiation beam which is then projected onto the substrate. The image quality of this projected beam is affected by the uniformity of the beam. Summary of the invention

[0008] Therefore, it is desirable to control illumination uniformity so that the lithography tool performs the lithography process as accurately and quickly as possible.

[0009] In some aspects, an illumination adjustment device may include a plate, an actuator, and a finger structure. The actuator may include a coil disposed on the plate. The finger structure may include a beryllium alloy material. One of the finger structures may be coupled to a corresponding one of the actuators via a magnet. The finger structure may be configured to independently move using the actuator, be at least partially disposed in a path of a radiation beam to intercept at least a portion of the beam, and adjust an intensity cross section of the beam based on the movement and the interception.

[0010] In some aspects, a lithographic apparatus may include an illumination system and an illumination adjustment apparatus. The illumination system may be configured to illuminate a pattern of a pattern forming device. The illumination adjustment apparatus may include a plate, an actuator, and a finger structure. The actuator may include a coil disposed on the plate. The finger structure may include a beryllium alloy material. One of the finger structures may be coupled to a corresponding actuator of the actuator via a magnet. The finger structure may be configured to independently move using an actuator, at least partially be disposed in a path of a radiation beam to intercept at least a portion of the beam, and adjust an intensity cross-section of the beam based on the movement and the interception.

[0011] In some aspects, an irradiation adjustment device may include a plate, an actuator, and a finger structure. The plate may include fluid channels distributed throughout the plate. The fluid channels may be configured to circulate a cooling fluid throughout the plate and introduce the cooling fluid at a central region of the plate before sending the cooling fluid to a peripheral region of the plate. The actuator may include a coil disposed at the plate. At least a portion of the fluid channel may be disposed between at least two of the coils. One of the finger structures may be coupled to a corresponding actuator in the actuator via a magnet. The finger structure may be configured to be independently moved using an actuator, at least partially disposed in a path of a radiation beam to intercept at least a portion of the beam, and to adjust an intensity cross section of the beam based on the movement and the interception.

[0012] In some aspects, a lithographic apparatus may include an illumination system and an illumination adjustment device. The illumination system may be configured to illuminate a pattern of a pattern forming device. The illumination adjustment device may include a plate, an actuator, and a finger structure. The plate may include a fluid channel distributed throughout the plate. The fluid channel may be configured to circulate a cooling fluid throughout the plate and introduce the cooling fluid at a central area of ​​the plate before sending the cooling fluid to a peripheral area of ​​the plate. The actuator may include a coil disposed at the plate. At least a portion of the fluid channel may be disposed between at least two of the coils. One of the finger structures may be coupled to a corresponding actuator in the actuator via a magnet. The finger structure may be configured to be independently moved using an actuator, at least partially disposed in a path of a radiation beam to intercept at least a portion of the beam, and to adjust an intensity cross section of the beam based on the movement and the interception.

[0013] Other features of various aspects of the present disclosure are described in detail below with reference to the accompanying drawings. It should be noted that the present disclosure is not limited to the specific aspects described herein. Such aspects are presented herein only for illustrative purposes. Based on the teachings contained herein, additional aspects will be apparent to those skilled in the relevant art. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The accompanying drawings, which are incorporated herein and form a part of this specification, illustrate the present disclosure and, together with the description, further serve to explain the principles of the present disclosure and to enable one skilled in the relevant art to make and use the aspects described herein.

[0015] Figure 1A A reflective lithographic apparatus according to some aspects is shown.

[0016] Figure 1B A transmissive lithographic apparatus according to some aspects is shown.

[0017] Figure 2 More details of a reflective lithography apparatus according to some aspects are shown.

[0018] Figure 3 A lithography cell according to some aspects is shown.

[0019] Figure 4 A uniformity correction system according to some aspects is shown.

[0020] Figure 5 Shown is a finger structure that may be used in a uniformity correction system according to some aspects.

[0021] Figure 6 A plate that may be used in a uniformity correction system according to some aspects is shown.

[0022] Features of the present disclosure will become more apparent from the detailed description set forth below in conjunction with the accompanying drawings, in which the same reference numerals identify corresponding elements throughout the entire text. In the drawings, the same reference numerals generally indicate identical, functionally similar, and / or structurally similar elements. In addition, generally, the leftmost digit of a reference numeral identifies the drawing in which the reference numeral first appears. Unless otherwise indicated, the drawings provided throughout the present disclosure should not be construed as drawings to scale. DETAILED DESCRIPTION

[0023] The aspects described herein and references in this specification to "one aspect," "aspect," "exemplary aspect," "example aspect," etc. indicate that the described aspects may include certain features, structures, or characteristics, but each aspect may not necessarily include the certain features, structures, or characteristics. In addition, such phrases do not necessarily refer to the same aspect. In addition, when a certain feature, structure, or characteristic is described in conjunction with an aspect, it should be understood that it is within the purview of those skilled in the art to implement such feature, structure, or characteristic in conjunction with other aspects, whether or not explicitly described.

[0024] For ease of description, spatially relative terms (such as "below," "beneath," "lower," "above," "upper," etc.) may be used herein to describe the relationship of one element or feature illustrated in the figures to another element or feature. Spatially relative terms are also intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. The device may be otherwise oriented (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0025] The terms "about", "substantially", etc. may be used herein to indicate a value of a given quantity that may vary based on a particular technology. Based on a particular technology, the terms "about", "substantially", etc. may indicate a value of a given quantity that varies within, for example, 10% to 30% of a value (e.g., ±10%, ±20%, or ±30% of a value).

[0026] Aspects of the present disclosure may be implemented in hardware, firmware, software, or any combination thereof. Aspects of the present disclosure may also be implemented as instructions stored on a computer-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form that can be read by a machine (e.g., a computing device). For example, a machine-readable medium may include: a read-only memory (ROM); a random access memory (RAM); a disk storage medium; an optical storage medium; a flash memory device; an electrical, optical, acoustic, or other form of propagation signal (e.g., a carrier wave, an infrared signal, a digital signal, etc.); etc. In addition, firmware, software, routines, and / or instructions may be described herein as performing certain actions. However, it should be understood that these descriptions are merely for convenience, and that these actions are caused by a computing device, a processor, a controller, or other devices that execute firmware, software, routines, instructions, etc. The term "machine-readable medium" may be interchangeable with similar terms, such as "computer program product", "computer-readable medium", "non-transitory computer-readable medium", etc. The term "non-transitory" may be used herein to characterize one or more forms of computer-readable media other than transient propagation signals.

[0027] However, before describing these aspects in further detail, it is instructive to present an example environment that can be used to implement aspects of the present disclosure.

[0028] Example Lithography System

[0029] Figure 1A and Figure 1B A lithographic apparatus 100 and a lithographic apparatus 100' are shown, respectively, in which aspects of the present disclosure may be implemented. The lithographic apparatus 100 and the lithographic apparatus 100' each include the following: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., deep ultraviolet or extreme ultraviolet radiation); a support structure (e.g., a mask stage) MT configured to support a patterning device (e.g., a mask, a reticle, or a dynamic patterning device) MA and connected to a first positioner PM configured to accurately position the patterning device MA; and a substrate stage (e.g., a wafer stage) WT configured to hold a substrate (e.g., a wafer coated with resist) W and connected to a second positioner PW configured to accurately position the substrate W. The lithographic apparatus 100 and 100' also have a projection system PS configured to project a pattern imparted to the radiation beam B by the patterning device MA onto a target portion (e.g., comprising one or more dies) C of the substrate W. In lithographic apparatus 100, patterning device MA and projection system PS are reflective. In lithographic apparatus 100', patterning device MA and projection system PS are transmissive.

[0030] The illumination system IL may include various types of optical components for directing, shaping or controlling the radiation beam B, such as refractive, reflective, catadioptric, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof. The illumination system IL may also include a sensor ES that provides one or more measurements of, for example, energy per pulse, photon energy, intensity, average power, etc. The illumination system IL may include a measurement sensor MS for measuring the movement of the radiation beam B, and a uniformity compensator UC that allows control of the uniformity of the illumination slit. The measurement sensor MS may also be arranged at other locations. For example, the measurement sensor MS may be on or near the substrate table WT.

[0031] The support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device MA relative to the reference frame, the design of at least one of the lithographic apparatuses 100 and 100', and other conditions (such as whether the patterning device MA is held in a vacuum environment). The support structure MT may use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device MA. The support structure MT may be, for example, a frame or a stage, which may be fixed or movable. By using sensors, the support structure MT may ensure that the patterning device MA is in a desired position, for example, relative to the projection system PS.

[0032] The term “patterning device” MA should be broadly interpreted as referring to any device that can be used to impart a radiation beam B with a pattern in its cross-section so as to create a pattern in a target portion C of a substrate W. The pattern imparted to the radiation beam B may correspond to a specific functional layer in a device created in the target portion C to form an integrated circuit.

[0033] The pattern forming device MA may be transmissive (e.g. Figure 1B lithographic apparatus 100') or reflective (as in Figure 1A 100). Examples of pattern forming devices MA include reticles, masks, programmable mirror arrays, or programmable LCD panels. Masks are well known in lithography and include mask types such as binary, alternating phase shift, or attenuated phase shift, as well as various hybrid mask types. Examples of programmable mirror arrays employ a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incident radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam B that is reflected by the matrix of small mirrors.

[0034] The term "projection system" PS may cover any type of projection system including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems or any combination thereof, as appropriate to the exposure radiation used or to other factors such as the use of an immersion liquid on the substrate W or the use of a vacuum. A vacuum environment may be used for EUV or electron beam radiation, since other gases may absorb too much radiation or electrons. Therefore, a vacuum environment may be provided to the entire beam path by means of vacuum walls and a vacuum pump.

[0035] The lithographic apparatus 100 and / or lithographic apparatus 100' may be of a type having two (dual stage) or more substrate tables WT (and / or two or more mask tables). In these "multi-stage" machines, the additional substrate tables WT may be used in parallel, or preparatory steps may be performed on one or more tables while one or more other substrate tables WT are being used for exposure. In some cases, the additional tables may not be substrate tables WT.

[0036] The lithographic apparatus may also be of a type in which at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, such as water, so as to fill the space between the projection system and the substrate. Immersion liquid may also be applied to other spaces in the lithographic apparatus, such as the space between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of the projection system. The term "immersion" as used herein does not imply that structures, such as the substrate, must be immersed in the liquid. For example, the liquid may be located between the projection system and the substrate during exposure.

[0037] refer to Figure 1A and Figure 1B , the illuminator IL receives a radiation beam from a radiation source SO. For example, when the source SO is an excimer laser, the source SO and the lithographic apparatus 100, 100' may be separate physical entities. In such a case, the source SO is not considered to form part of the lithographic apparatus 100 or 100', and the radiation beam B is delivered to the lithographic apparatus 100 or 100' by means of a beam delivery system BD (in the case of a beam delivery system BD) comprising, for example, suitable directional mirrors and / or a beam expander. Figure 1B In other cases, for example, when the source SO is a mercury lamp, the source SO may be an integral part of the lithographic apparatus 100, 100'. The radiation system may include the source SO, the illuminator IL, and / or the beam delivery system BD.

[0038] The illuminator IL may comprise an adjuster AD (at Figure 1B In general, at least the outer radial extent and / or the inner radial extent (commonly referred to as "σ-outer" and "σ-inner", respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may include various other components (in Figure 1B The luminaire IL may be used to condition the radiation beam B to have a desired uniformity and intensity distribution in its cross-section. The desired uniformity of the radiation beam B may be maintained by using a uniformity compensator UC. The uniformity compensator UC includes a plurality of protrusions (e.g., fingers) that may be adjusted in the path of the radiation beam B to control the uniformity of the radiation beam B. A sensor ES may be used to monitor the uniformity of the radiation beam B.

[0039] refer to Figure 1A, the radiation beam B is incident on a patterning device (e.g., a mask) MA held on a support structure (e.g., a mask table) MT and is patterned by the patterning device MA. In the lithographic apparatus 100, the radiation beam B is reflected from the patterning device (e.g., a mask) MA. After reflection from the patterning device (e.g., a mask) MA, the radiation beam B passes through a projection system PS, which focuses the radiation beam B onto a target portion C of a substrate W. With the aid of a second positioner PW and a position sensor IF2 (e.g., an interferometric device, a linear encoder, or a capacitive sensor), the substrate table WT can be accurately moved (e.g., so that different target portions C are positioned in the path of the radiation beam B). Similarly, a first positioner PM and a further position sensor IF1 can be used to accurately position the patterning device (e.g., a mask) MA relative to the path of the radiation beam B. The patterning device (e.g., a mask) MA and the substrate W can be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.

[0040] refer to Figure 1B , the radiation beam B is incident on a pattern forming device (e.g., mask MA) held on a support structure (e.g., mask table MT) and is patterned by the pattern forming device. Having traversed the mask MA, the radiation beam B passes through a projection system PS, which focuses the beam onto a target portion C of the substrate W. The projection system has a pupil conjugate PPU to the illumination system pupil IPU. Portions of the radiation diverge from the intensity distribution at the illumination system pupil IPU and traverse the mask pattern without being affected by diffraction at the mask pattern, and produce an image of the intensity distribution at the illumination system pupil IPU. The desired uniformity of the radiation beam B can be maintained by using a uniformity compensator UC to control the uniformity of the radiation beam B. A sensor ES can be used to monitor the uniformity of the radiation beam B.

[0041] The projection system PS projects an image of a mask pattern MP onto a resist layer applied on a substrate W, wherein the image is formed by a diffraction beam generated from the marking pattern MP by radiation from the intensity distribution. For example, the mask pattern MP may comprise an array of lines and spaces. Diffraction of radiation at the array and other than the zero-order diffraction generates a steered diffraction beam having a change of direction in a direction perpendicular to the lines. The non-diffracted beam, i.e. the so-called zero-order diffraction beam, traverses the pattern without any change in the propagation direction. The zero-order diffraction beam traverses an upper lens or an upper lens group of the projection system PS upstream of a pupil conjugate PPU of the projection system PS to reach the pupil conjugate PPU. The portion of the intensity distribution in the plane of the pupil conjugate PPU and associated with the zero-order diffraction beam is an image of the intensity distribution in the illumination system pupil IPU of the illumination system IL. The aperture device PD is arranged, for example, at or approximately at a plane comprising the pupil conjugate PPU of the projection system PS.

[0042] The projection system PS is arranged to capture (e.g., using a lens or lens group L) a zero-order diffraction beam, a first order diffraction beam, and / or a higher order diffraction beam (not shown). In some aspects, dipole illumination for imaging a line pattern extending in a direction perpendicular to the line can be used to exploit the resolution enhancement effect of dipole illumination. For example, the first order diffraction beam interferes with the corresponding zero-order diffraction beam at the level of the wafer W, while producing an image of the line pattern MP with the highest possible resolution and process window (i.e., the available focal depth combined with the allowable exposure dose deviation). In some aspects, astigmatic aberrations can be reduced by providing radiation poles (not shown) in opposite quadrants of the illumination system pupil IPU. In addition, in some aspects, astigmatic aberrations can be reduced by blocking the zero-order beam in the pupil conjugate PPU of the projection system associated with the radiation poles in the opposite quadrant. More details are described in US 7,511,799 B2 issued on March 31, 2009, which is incorporated herein by reference in its entirety.

[0043] With the help of a second positioner PW and a position sensor IFD (e.g. an interferometric device, a linear encoder or a capacitive sensor), the substrate table WT can be accurately moved (e.g. in order to position a different target portion C in the path of the radiation beam B). Similarly, the first positioner PM and another position sensor ( Figure 1B ) can be used to accurately position the mask MA relative to the path of the radiation beam B (eg after mechanical retrieval from a mask library or during scanning).

[0044] Typically, movement of the mask table MT may be achieved with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning) which form part of the first positioner PM. Similarly, movement of the substrate table WT may be achieved using a long-stroke module and a short-stroke module which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner), the mask table MT may be connected to a short-stroke actuator, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks (as illustrated) occupy dedicated target portions, the marks may be located in the spaces between target portions (these marks are referred to as scribe alignment marks). Similarly, in the case where more than one die is provided on the mask MA, the mask alignment marks may be located between the dies.

[0045] The mask table MT and the patterning device MA may be in the vacuum chamber V, wherein an in-vacuum robot IVR may be used to move the patterning device, such as a mask, into and out of the vacuum chamber V. Alternatively, when the mask table MT and the patterning device MA are outside the vacuum chamber, an out-of-vacuum robot may be used for various transfer operations similar to the in-vacuum robot IVR. Both the in-vacuum robot and the out-of-vacuum robot may be calibrated for smooth transfer of any payload (e.g., a mask) to the fixed kinematic mount of the transfer station.

[0046] The lithographic apparatus 100 and 100' may be used in at least one of the following modes:

[0047] 1. In step mode, the support structure (e.g. mask table) MT and substrate table WT remain substantially stationary (i.e. a single static exposure) while the entire pattern imparted to the radiation beam B is projected at one time onto a target portion C. Next, the substrate table WT is shifted in the X and / or Y direction so that a different target portion C can be exposed.

[0048] 2. In scan mode, the support structure (e.g. mask table) MT and substrate table WT are scanned synchronously (i.e. single dynamic exposure) as a pattern imparted to the radiation beam B is projected onto a target portion C. The speed and direction of the substrate table WT relative to the support structure (e.g. mask table) MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS.

[0049] 3. In another mode, the support structure (e.g. mask table) MT is held substantially stationary, thereby holding the programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam B is projected onto a target portion C. A pulsed radiation source SO may be employed, and the programmable patterning device updated as required after each movement of the substrate table WT or between successive radiation pulses during a scan. This mode of operation may be readily applicable in maskless lithography using a programmable patterning device, such as a programmable mirror array.

[0050] Combinations and / or variations on the described modes of use or entirely different modes of use may also be employed.

[0051] In another aspect, the lithographic apparatus 100 includes an extreme ultraviolet (EUV) source configured to generate an EUV radiation beam for EUV lithography. Typically, the EUV source is configured in a radiation system, and a corresponding illumination system is configured to condition the EUV radiation beam of the EUV source.

[0052] Figure 2 The lithographic apparatus 100 is shown in more detail, including a source collector device SO, an illumination system IL, and a projection system PS. The source collector device SO is constructed and arranged so that a vacuum environment can be maintained in an enclosure 220 of the source collector device SO. The EUV radiation emitting plasma 210 can be formed by a discharge-generated plasma source. EUV radiation can be generated from a gas or vapor (e.g., Xe gas, Li vapor, or Sn vapor), wherein the EUV radiation emitting plasma 210 is generated to emit radiation in the EUV range of the electromagnetic spectrum. For example, the EUV radiation emitting plasma 210 is generated by a discharge that causes at least a partially ionized plasma. For efficient generation of radiation, Xe, Li, Sn vapor, or any other suitable gas or vapor at a partial pressure of, for example, 10 Pa can be used. In some aspects, an excited tin (Sn) plasma (e.g., via laser excitation) is provided to generate EUV radiation.

[0053] The radiation emitted by the EUV radiation emitting plasma 210 is transferred from the source chamber 211 to the collector chamber 212 via an optionally present gas barrier or contaminant trap 230 (also referred to as a contaminant barrier or fin trap in some cases) positioned in or behind an opening in the source chamber 211. The contaminant trap 230 may include a channel structure. The contaminant trap 230 may also include a gas barrier, or a combination of a gas barrier and a channel structure. The contaminant trap or contaminant barrier 230 further indicated herein includes at least a channel structure.

[0054] The collector chamber 212 may include a radiation collector CO, which may be a so-called grazing incidence collector. The radiation collector CO has an upstream radiation collector side 251 and a downstream radiation collector side 252. Radiation traversing the collector CO may be reflected from the grating spectral filter 240 to be focused in a virtual source point INTF. The virtual source point INTF is generally referred to as an intermediate focus, and the source collector device is arranged so that the intermediate focus INTF is located at or near an opening 219 in the enclosure structure 220. The virtual source point INTF is an image of the EUV radiation emitting plasma 210. The grating spectral filter 240 is particularly used to suppress infrared (IR) radiation.

[0055] The radiation then traverses an illumination system IL which may include a faceted field mirror arrangement 222 and a faceted pupil mirror arrangement 224 arranged to provide a desired angular distribution of the radiation beam 221 at the patterning device MA, and a desired uniformity of radiation intensity at the patterning device MA. After reflection of the radiation beam 221 at the patterning device MA held by the support structure MT, a patterned beam 226 is formed and the patterned beam 226 is imaged by the projection system PS via reflective elements 228, 229 onto a substrate W held by a wafer stage or substrate table WT.

[0056] In general, there may be more elements than shown in the illumination optics unit IL and the projection system PS. Depending on the type of lithographic apparatus, a grating spectral filter 240 may optionally be present. Additionally, there may be more than Figure 2 More mirrors than those shown, for example, may be present in the projection system PS. Figure 2 The reflective elements shown in FIG. 5 may include up to six additional reflective elements.

[0057] In some aspects, the illumination optics unit IL may include a sensor ES that provides one or more measurements of, for example, energy per pulse, photon energy, intensity, average power, etc. The illumination optics unit IL may include a measurement sensor MS for measuring the movement of the radiation beam B, and a uniformity compensator UC that allows control of the uniformity of the illumination slit. The measurement sensor MS may also be arranged at other locations. For example, the measurement sensor MS may be on or near the substrate table WT.

[0058] like Figure 2The collector optics CO illustrated in FIG. 1 is depicted as a nested collector with grazing incidence reflectors 253, 254 and 255, merely as an example of a collector (or collector mirror). The grazing incidence reflectors 253, 254 and 255 are arranged axially symmetrically around the optical axis O, and this type of collector optics CO is preferably used in combination with a discharge produced plasma source (often referred to as a DPP source).

[0059] Example Lithography Cell

[0060] Figure 3 A lithography unit 300 is shown according to some aspects, which is sometimes also referred to as a lithography cell or cluster. The lithography apparatus 100 or 100' may form part of the lithography unit 300. The lithography unit 300 may also include one or more devices for performing pre-exposure processes and post-exposure processes on a substrate. Conventionally, these include a spin coater SC for depositing a resist layer, a developer DE for developing the exposed resist, a chill plate CH, and a baking plate BK. A substrate conveyor or robot RO picks up a substrate from an input / output port I / O1, I / O2, moves the substrate between different processing devices, and transfers the substrate to a feed station LB of the lithography apparatus 100 or 100'. These devices, which are often collectively referred to as track or coating and developing systems, are under the control of a track or coating and developing system control unit TCU, which itself is controlled by a management control system SCS, which also controls the lithography apparatus via a lithography control unit LACU. Therefore, different devices can be operated to maximize throughput and processing efficiency.

[0061] Example Uniformity Correction System

[0062] Figure 4 4 shows a portion of a uniformity correction system 400 according to some aspects. In some aspects, the uniformity correction system 400 may correspond to Figure 1A , Figure 1B and Figure 2 The uniformity correction system 400 includes a plurality of uniformity compensator elements 404 (eg, fingers). Each uniformity compensator element in the plurality of uniformity compensator elements 404 includes a distal edge 406. The uniformity correction system 400 may be combined with one or more sensors (eg, ES and / or MS ( Figure 1A , Figure 1B and Figure 2 )) works to monitor and adjust the intensity distribution of the radiation beam.

[0063] Cross slot irradiation 408 Figure 4. The cross-slot illumination 408 may also be referred to as a cross section of a radiation beam, a cross section along a path of a radiation beam, an illumination slit, and the like. The cross-slot illumination 408 is represented as a 2D intensity map having different intensity regions 410, 412, and 414. For example, the intensity region 410 has a low relative intensity and is disposed on an outer portion of the cross-slot illumination 408. Conversely, the intensity region 414 has a high relative intensity and is disposed toward a central portion of the cross-slot illumination 408. In some aspects, the shape of the cross-slot illumination 408 has a generally arcuate geometry. Each distal edge 406 includes a straight distal edge oriented to generally follow the curvature of the arcuate geometry. In some aspects, the shape of the cross-slot illumination 408 has a generally rectangular geometry (not shown) and each distal edge includes a straight edge oriented to generally follow the shape of the rectangular geometry. Each uniformity compensator element in the plurality of uniformity compensator elements 404 is attached to a corresponding actuator (not shown).

[0064] In some aspects, the uniformity correction system 400 can modify or adjust the illumination beam used in the lithography operation. For example, each uniformity compensator element in the plurality of uniformity compensator elements 404 can be adjusted in the path of the illumination beam (e.g., at least the overlapping cross-groove illumination 408) using a corresponding actuator to make the intensity distribution of the cross-groove illumination 408 conform to a selected intensity distribution. Therefore, the uniformity correction system 400 can also be referred to as an illumination adjustment device. Example operations of uniformity compensators can be found in commonly owned U.S. Patent Nos. 8,629,973 B2, filed on May 28, 2010, and 9,134,620 B2, filed on April 12, 2012, which are incorporated herein by reference in their entirety.

[0065] In some aspects, the function of the uniformity correction system 400 is to condition the radiation beam so that the interaction between the radiation beam and the uniformity correction system 400 produces a resulting radiation beam having intensity characteristics that meet given specifications. For example, it is important for a photolithography process to use a very specific dose of radiation in order to ensure that the pattern is transferred from the mask to the wafer with as little error as possible. The cross-sectional intensity of the radiation beam may fluctuate over time. The fluctuations may increase the likelihood of errors in the pattern transfer. The uniformity correction system 400 may be used to control the cross-sectional intensity of the radiation beam in order to reduce errors in the pattern transfer.

[0066] The term "throughput" is generally understood to be the amount of material or item that is transferred through a system or process. In some aspects, the term "throughput" can be used to characterize the rate of photolithography. For example, throughput can refer to the rate at which photolithography is completed on a wafer, the rate at which a wafer clears a specific manufacturing step and moves to the next step, and so on. Throughput can be a performance indicator of a lithographic device. It is expected that a lithography system outputs as many products as possible in the shortest possible time. Photolithography can include several complex processes. Each part of the process can involve a trade-off between balancing quality (e.g., sub-nanometer accuracy, high yield) and defects (e.g., slower manufacturing, cost). For example, to improve pattern transfer accuracy, lithography can include rapid actuation of compensator fingers to adjust the radiation beam (to reduce pattern transfer errors).

[0067] However, in some aspects, mechanical systems such as uniformity correction systems can have vibration issues (e.g., resonant modes). Depending on the material and size of the fingers, vibration issues can be more significant at higher actuation speeds. The speed of actuation can be reduced to reduce the effects of the vibration modes, but at the expense of reduced throughput. In addition, high-speed actuation can generate high heat, thereby increasing the likelihood of mechanical failure, shortening the life expectancy of affected components, and adversely affecting the overall performance of the uniformity correction system. The aspects described herein implement various devices and various functions to reduce vibration and thermal effects in a uniformity correction system.

[0068] Figure 5 A finger structure 500 is shown that can be used in a uniformity correction system according to some aspects. In some aspects, the finger structure 500 can include a body 502 and a tip 504. The actuator portion of the finger structure 500 can include a coil 508 and a magnet 510. The coil 508 can be disposed on a plate 506. The magnet 510 can be a magnet system (e.g., one or more magnets). The finger structure 500 can also include one or more flexures 512. The uniformity compensator element 404 ( Figure 4 )'s structure and function may be designed according to the finger structure 500 as described herein.

[0069] In some aspects, the finger structure 500 can be positioned near the path of the radiation beam 514. The cross-section of the radiation beam 514 can correspond to the cross-slot irradiation 408 ( Figure 4). The radiation beam 514 can illuminate a patterning device 516. The patterning device 516 can impart a pattern on the radiation beam 514 so as to project an image of the pattern from the patterning device 516 onto a substrate (pattern transfer). The patterning device 516 can be reflective or transmissive. It is critical that the intensity distribution of the radiation beam 514 complies with the tolerances of the lithography process. One or more finger structures can be used to control the intensity distribution of the radiation beam 514. For grouping of finger structures, each finger structure 500 can be moved independently of other finger structures. The finger structure 500 can be at least partially arranged in the path of the radiation beam 514 to intercept at least a portion of the beam. By moving the finger structure 500 in and / or out of the radiation beam 514, the intensity cross-section of the beam can be adjusted.

[0070] In some aspects, the material of the finger structure 500 may also have improved thermal and chemical stability. For example, the thermal conductivity of beryllium alloys may be higher than other candidate materials with similar stiffness and density to beryllium alloys. In addition, beryllium alloys may be more resistant to corrosion in partial vacuum environments commonly used in EUV lithography machines. For example, the material may tolerate dilute hydrogen.

[0071] In some aspects, board 506 can generate a significant amount of heat due to the electrical power supplied to coil 508. Board 506 can include multiple coils to drive multiple finger structures.

[0072] In some aspects, one or more flexures 512 can reduce vibrations of the finger structure 500, particularly for use along the length of the finger structure 500 (e.g., along the length of the finger structure 500). Figure 5 While one or more flexures 512 can provide some vibration control along the width (x-axis) of finger structure 500, when multiple finger structures are placed side by side, it may be difficult to implement more stringent vibration control in the limited space available (e.g., as shown in FIG. Figure 4 ). The width dimension may be smaller than and perpendicular to the length. Vibrations along the x-axis may also be referred to as left-right vibrations, lateral vibrations, transverse vibrations, and the like. To circumvent this problem, the finger structure 500 may include an ultra-light and ultra-hard material, such as a beryllium alloy. In a non-limiting example, the body 502 may be made of a beryllium alloy. The lightness of the beryllium alloy facilitates rapid actuation of the finger structure 500, while the increased stiffness may change the bandwidth of the vibration mode, thereby reducing vibration at higher actuation speeds. The properties of the beryllium alloy may help increase the lower limit of the frequency of the vibration mode (i.e., the frequency at which the vibration can absorb energy from the actuation). The minimum frequency of the lateral vibration mode may be pushed up to, for example, approximately 130 Hz or higher, 160 Hz or higher, 180 Hz or higher, 200 Hz or higher, and the like.

[0073] Figure 6 606 is shown that can be used in a uniformity correction system according to some aspects. In some aspects, the plate 606 can correspond to Figure 5 The plate 506 in the embodiment of the present invention. The plate 606 may include a plurality of coil regions 618 and a fluid channel 620. The actuator coil (e.g., coil 508 ( Figure 5 )) may be disposed at each coil region in the plurality of coil regions 618. The plate 606 may be provided together with a plurality of finger structures (eg, the finger structures 500 ( Figure 5 )) are assembled together to form a uniformity correction system (eg, uniformity correction system 400 ( Figure 4 )). The fluid channel 620 may include an inlet 622 and an outlet 624.

[0074] In some aspects, as the uniformity correction system is used more frequently (e.g., more power is provided to the coil for faster actuation), the plate 606 may accumulate a large amount of heat, which may lead to poor device performance or even irreversible damage. Therefore, the fluid channel 620 may provide a uniformity correction component for the cooling fluid of the quenching plate 606. In one example, the fluid channel 620 may be arranged around the periphery of the plate 606, that is, guide the cooling fluid (illustrated as dashed line 626). Although such a design may be desirable for its simplicity, the problem with the design is that the cooling fluid has limited ability to cool the center of the plate 606. The resulting thermal gradient may affect the actuation function of the uniformity correction system and may also affect the accuracy or precision of the positioning of the finger structure. Therefore, the fluid channel 620 may be configured to circulate the cooling fluid throughout the plate 606. In addition, the cooling fluid may be introduced at the central area of ​​the plate 606 (e.g., via the inlet 622) before being sent to the peripheral area of ​​the plate 606, or vice versa. The fluid channel 620 may also have a serpentine structure. The coil area 618 may be arranged in rows. The fluid channel 620 may exist between all rows of the coil area 618 to optimize cooling. The fluid channel 620 may be arranged between two or more coils in the coil so that the cooling fluid can flow adjacent to each heat generating coil, which may not be possible if the fluid channel 620 is shaped like the dotted line 626.

[0075] In some aspects, the inlet and outlet of the cooling system can be designed to accommodate space constraints. A space-saving design can include having inlet 622 and outlet 624 on the same side of plate 606 so that supply and return lines for cooling fluid can be arranged side by side. In such a context, a side does not necessarily strictly refer to an edge or perimeter. For example, line 628 can be as shown in FIG. Figure 6, which can define a top side (above line 628) and a bottom side (below line 628). Next, according to this non-limiting example, both the inlet 622 and the outlet 624 can be disposed on the bottom side (ie, on the side below line 628).

[0076] In some aspects, the plate 606 can be arranged into multiple quadrants (eg, as defined by example lines 630 and 632). Next, according to this non-limiting example, both the inlet 622 and the outlet 624 can be disposed on the same quadrant.

[0077] In some aspects, when space constraints are less severe, the inlet 622 and outlet 624 can be positioned on different sides or in different quadrants.

[0078] In some aspects, the plate 606 can have a thickness in the height direction. The thickness in and out of the page can be defined, i.e. Figure 6 The height direction in the fluid channel 620. The fluid channel 620 can be arranged at a first height or plane. Alternatively, the distribution and arrangement of the fluid channel 620 can define a first plane. The inlet 622 and / or the outlet 624 can be arranged on a second plane offset from the first plane. This arrangement can be particularly suitable for accommodating the inlet 622 and the outlet 624 on the same side or the same quadrant. Figure 6 As shown in FIG. 6 , the inlet 622 can be arranged above a section of the fluid channel 620 so as not to conflict with the intended flow path of the cooling fluid. In some aspects, it is desirable to reduce the volume and footprint of the uniformity correction system (e.g., a design with a small thickness, a design with as small a gap as possible between the magnet and the plate 506 and the magnet 510 ( Figure 5 )). In some aspects, the cooling scheme may direct the flow out of the plane from the coil. However, this may significantly increase the gap and / or reduce overall performance. Therefore, in some aspects, the flow may be in line with the coil, rather than out of plane.

[0079] In some aspects, the board 606 can include a plurality of sensor regions 634. Thermal sensors (eg, thermistors) can be disposed at the sensor regions 634. Figure 6As shown by the distribution of sensor areas 634 in , the thermal sensors can cover a wide area of ​​the plate 606 to allow monitoring of the temperature of the cooling fluid as it travels from a central region of the plate 606 to a peripheral region of the plate 606. Sensing of temperature gradients throughout the plate 606 can provide an indication of the operating condition of the uniformity correction system (e.g., in working order, a faulty coil, a cooling failure, etc.). In some aspects, the sensors can be arranged in close pairs to provide redundancy. Each sensor in a pair of sensors can be arranged on either side of a segment of the fluid channel 620. By gathering information from a pair of channels, it is contemplated that errors can be detected in the event of a failure of one sensor.

[0080] The terms "radiation," "beam," "light," "irradiation," and the like may be used herein to refer to one or more types of electromagnetic radiation, such as ultraviolet (UV) radiation (e.g., having a wavelength λ of 365 nm, 248 nm, 193 nm, 157 nm, or 126 nm), extreme ultraviolet (EUV or soft X-ray) radiation (e.g., having a wavelength in the range of 5 nm to 100 nm, such as 13.5 nm), or hard X-rays operating at less than 5 nm, and particle beams, such as ion beams or electron beams. Generally, radiation having wavelengths between about 400 and about 700 nm is considered visible radiation; radiation having wavelengths between about 780 nm and 3000 nm (or greater) is considered IR radiation. UV refers to radiation having wavelengths of approximately 100 nm to 400 nm. Within lithography, the term "UV" also applies to wavelengths that can be produced by mercury discharge lamps: G-line 436 nm; H-line 405 nm; and / or I-line 365 nm. Vacuum UV or VUV (i.e., UV absorbed by gases) refers to radiation having a wavelength of approximately 100 nm to 200 nm. Deep UV (DUV) generally refers to radiation having a wavelength in the range of 126 nm to 428 nm, and in some aspects, an excimer laser can produce DUV radiation for use within a lithographic apparatus. It will be appreciated that radiation having a wavelength in the range of, for example, 5 nm to 20 nm refers to radiation having a wavelength band, at least a portion of which is in the range of 5 nm to 20 nm.

[0081] The embodiments may be further described using the following aspects:

[0082] 1. An illumination adjustment device, the illumination adjustment device comprising:

[0083] plate;

[0084] an actuator, the actuator comprising a coil;

[0085] A finger structure comprising a beryllium alloy material, wherein a plurality of the finger structures are coupled to corresponding ones of the actuators via magnets, and wherein the finger structures are configured to:

[0086] being independently moved using said actuators;

[0087] being disposed at least partially in a path of a radiation beam to intercept at least a portion of the beam; and

[0088] Adjust the intensity cross section of the beam.

[0089] 2. The illumination adjustment device according to aspect 1, further comprising a flexure attached to the finger structure, wherein the flexure is configured to reduce vibration of the finger structure.

[0090] 3. The illumination adjustment device according to claim 1, wherein:

[0091] The finger structure has a width and a length;

[0092] The width is shorter than and perpendicular to the length;

[0093] The finger structure has a lateral vibration mode along the width; and

[0094] The minimum frequency of the lateral vibration mode is approximately 130 Hz or higher.

[0095] 4. The illumination adjustment device according to claim 1, wherein:

[0096] The plate includes fluid channels distributed throughout the plate; and

[0097] The fluid channels are configured to circulate cooling fluid throughout the plate and introduce the cooling fluid at a central region of the plate before routing the cooling fluid to peripheral regions of the plate.

[0098] 5. A lithographic apparatus comprising:

[0099] an illumination system configured to illuminate the patterning device in a pattern; and

[0100] An irradiation adjustment device, the irradiation adjustment device comprising:

[0101] plate;

[0102] an actuator, the actuator comprising a coil;

[0103] A finger structure comprising a beryllium alloy material, wherein a plurality of the finger structures are coupled to corresponding ones of the actuators via magnets, and wherein the finger structures are configured to:

[0104] being independently moved using said actuators;

[0105] being disposed at least partially in a path of a radiation beam to intercept at least a portion of the beam; and

[0106] Adjust the intensity cross section of the beam.

[0107] 6. The lithographic apparatus of clause 5, wherein:

[0108] The illumination adjustment device further includes a flexure attached to the finger structure, and

[0109] The flexure is configured to reduce vibration of the finger structure.

[0110] 7. The lithographic apparatus of clause 5, wherein:

[0111] The finger structure has a width and a length;

[0112] The width is shorter than and perpendicular to the length;

[0113] The finger structure has a lateral vibration mode along the width; and

[0114] The minimum frequency of the lateral vibration mode is approximately 130 Hz or higher.

[0115] 8. The lithographic apparatus of clause 5, wherein:

[0116] The plate includes fluid channels distributed throughout the plate; and

[0117] The fluid channels are configured to circulate cooling fluid throughout the plate and introduce the cooling fluid at a central region of the plate before routing the cooling fluid to peripheral regions of the plate.

[0118] 9. An illumination adjustment device, comprising:

[0119] a plate comprising fluid channels distributed throughout the plate, wherein the fluid channels are configured to circulate a cooling fluid throughout the plate and to introduce the cooling fluid at a central region of the plate before sending the cooling fluid to a peripheral region of the plate;

[0120] an actuator comprising coils, wherein at least a portion of the fluid channel is disposed between at least two of the coils;

[0121] A finger structure, wherein a plurality of the finger structures are coupled to corresponding ones of the actuators via magnets, and wherein the finger structures are configured to:

[0122] being independently moved using said actuators;

[0123] being disposed at least partially in a path of a radiation beam to intercept at least a portion of the beam; and

[0124] Adjust the intensity cross section of the beam.

[0125] 10. The illumination adjustment device according to claim 9, wherein:

[0126] The fluid passage comprises an inlet and an outlet; and

[0127] The inlet and the outlet are arranged on the same side of the plate.

[0128] 11. The illumination adjustment device according to claim 9, wherein:

[0129] The fluid passage comprises an inlet and an outlet; and

[0130] The inlet and the outlet are arranged on different sides of the plate.

[0131] 12. The illumination adjustment apparatus according to claim 9, wherein:

[0132] The fluid passage comprises an inlet and an outlet; and

[0133] The inlet and the outlet are arranged on the same quadrant of the plate.

[0134] 13. The illumination adjustment apparatus according to claim 9, wherein:

[0135] The fluid passage comprises an inlet and an outlet; and

[0136] The inlet and the outlet are arranged on different quadrants of the plate.

[0137] 14. The illumination adjustment device according to claim 9, wherein:

[0138] The fluid channel defines a plane; and

[0139] The inlet and / or outlet can be arranged offset from the plane.

[0140] 15. The illumination adjustment device according to clause 9, further comprising a thermal sensor.

[0141] 16. The illumination adjustment device according to aspect 15, wherein at least one of the thermal sensors is disposed close to the central area and another of the thermal sensors is disposed close to the peripheral area.

[0142] 17. The illumination adjustment device according to aspect 9, wherein at least a portion of the fluid channel can be configured according to a serpentine structure.

[0143] 18. The illumination adjustment apparatus of clause 9, wherein the fluid channel is configured such that each of the coils is adjacent to a portion of the fluid channel.

[0144] 19. The illumination adjustment apparatus of clause 9, wherein the finger structure comprises a beryllium alloy material.

[0145] 20. A lithographic apparatus comprising:

[0146] an illumination system configured to illuminate the patterning device in a pattern; and

[0147] An irradiation adjustment device, the irradiation adjustment device comprising:

[0148] a plate comprising fluid channels distributed throughout the plate, wherein the fluid channels are configured to circulate a cooling fluid throughout the plate and to introduce the cooling fluid at a central region of the plate before sending the cooling fluid to a peripheral region of the plate;

[0149] an actuator comprising coils, wherein at least a portion of the fluid channel is disposed between at least two of the coils;

[0150] A finger structure, wherein a plurality of the finger structures are coupled to corresponding ones of the actuators via magnets, and wherein the finger structures are configured to:

[0151] being independently moved using said actuators;

[0152] being disposed at least partially in a path of a radiation beam to intercept at least a portion of the beam; and

[0153] Adjust the intensity cross section of the beam.

[0154] Although some aspects of the present disclosure are described in the context of lithographic equipment in IC manufacturing, it should be understood that the lithographic equipment described herein can be used in other applications, such as the manufacture of integrated optical systems, for guidance and detection modes of magnetic domain memories, flat panel displays, LCDs, thin film heads, etc. Those skilled in the art will understand that in the context of such alternative applications, any use of the term "wafer" or "die" herein can be regarded as a specific example of the more general term "substrate" or "target portion", respectively. The substrate can be processed before or after exposure, for example in a track unit (a tool that typically applies a resist layer to a substrate and develops the exposed resist) and / or a measurement unit. Where applicable, the aspects disclosed herein can be applied to such and other substrate processing tools. In addition, the substrate can be processed more than once, for example to produce a multi-layer IC, so that the term substrate used herein can also refer to a substrate that already includes multiple processed layers.

[0155] In addition, although some aspects of the present disclosure are described in the context of optical lithography, it should be understood that aspects of the present disclosure are not limited to optical lithography. For example, in imprint lithography, the topography in the patterning device defines the pattern produced on the substrate. The topography of the patterning device can be pressed into a resist layer supplied to the substrate, on which the resist is cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. After the resist is cured, the patterning device is removed from the resist, leaving a pattern therein.

[0156] It should be understood that the phraseology or terminology herein is for the purpose of description rather than limitation, so that the phraseology or terminology of this specification is to be interpreted by those skilled in the relevant art in accordance with the teachings herein.

[0157] The present disclosure has been described above with the aid of functional building blocks that illustrate the implementation of specific functions and the relationships of said functions. For ease of description, the present disclosure has arbitrarily defined the boundaries of these functional building blocks. Alternative boundaries may be defined as long as the specified functions and their relationships are properly performed. The foregoing description of specific aspects will therefore fully reveal the general nature of the present disclosure: without departing from the general concept of the present disclosure, others can easily modify and / or adapt such specific aspects for various applications by applying the knowledge understood by those skilled in the art without excessive experimentation. Therefore, based on the teachings and guidance presented herein, these adaptations and modifications are intended to be within the meaning and scope of the equivalents of the disclosed aspects.

[0158] It should be understood that the Detailed Description section, rather than the Summary and Abstract sections, is intended to be used to interpret the claims. The Summary and Abstract sections may set forth one or more, but not necessarily all, aspects of the invention contemplated by the inventors, and thus are not intended to limit the present disclosure and the appended claims in any way. The breadth and scope of the protected subject matter should not be limited by any of the aspects described above, but rather should be defined in accordance with the following claims and their equivalents.

Claims

1. An illumination adjustment device, the illumination adjustment device comprising: plate; an actuator, the actuator comprising a coil; A finger structure comprising a beryllium alloy material, wherein a plurality of the finger structures are coupled to corresponding ones of the actuators via magnets, and wherein the finger structures are configured to: being independently moved using said actuators; being disposed at least partially in a path of a radiation beam to intercept at least a portion of the beam; and Adjust the intensity cross section of the beam.

2. The illumination adjustment device of claim 1 , further comprising a flexure attached to the finger structure, wherein: The flexure is configured to reduce vibration of the finger structure.

3. The illumination adjustment device according to claim 1, wherein: The finger structure has a width and a length; The width is shorter than and perpendicular to the length; The finger structure has a lateral vibration mode along the width; and The minimum frequency of the lateral vibration mode is approximately 130 Hz or higher.

4. The illumination adjustment device according to claim 1, wherein: The plate includes fluid channels distributed throughout the plate; and The fluid channels are configured to circulate a cooling fluid throughout the plate and introduce the cooling fluid at a central region of the plate before routing the cooling fluid to peripheral regions of the plate.

5. A lithographic apparatus comprising: an illumination system configured to illuminate a pattern forming device; and An irradiation adjustment device, the irradiation adjustment device comprising: plate; an actuator, the actuator comprising a coil; A finger structure comprising a beryllium alloy material, wherein a plurality of the finger structures are coupled to corresponding ones of the actuators via magnets, and wherein the finger structures are configured to: being independently moved using said actuators; being disposed at least partially in a path of a radiation beam to intercept at least a portion of the beam; and Adjust the intensity cross section of the beam.

6. The lithographic apparatus according to claim 5, wherein: The illumination adjustment device further includes a flexure attached to the finger structure, and The flexure is configured to reduce vibration of the finger structure.

7. The lithographic apparatus according to claim 5, wherein: The finger structure has a width and a length; The width is shorter than and perpendicular to the length; The finger structure has a lateral vibration mode along the width; and The minimum frequency of the lateral vibration mode is approximately 130 Hz or higher.

8. The lithographic apparatus according to claim 5, wherein: The plate includes fluid channels distributed throughout the plate; and The fluid channels are configured to circulate a cooling fluid throughout the plate and introduce the cooling fluid at a central region of the plate before routing the cooling fluid to peripheral regions of the plate.

9. An illumination adjustment device, comprising: a plate including fluid channels distributed throughout the plate, wherein the fluid channels are configured to circulate a cooling fluid throughout the plate and to introduce the cooling fluid at a central region of the plate before sending the cooling fluid to a peripheral region of the plate; an actuator comprising coils, wherein at least a portion of the fluid channel is disposed between at least two of the coils; A finger structure, wherein a plurality of the finger structures are coupled to corresponding ones of the actuators via magnets, and wherein the finger structures are configured to: being independently moved using said actuators; being disposed at least partially in a path of a radiation beam to intercept at least a portion of the beam; and Adjust the intensity cross section of the beam.

10. The illumination adjustment device according to claim 9, wherein: The fluid passage comprises an inlet and an outlet; and The inlet and the outlet are arranged on the same side of the plate.

11. The illumination adjustment device according to claim 9, wherein: The fluid passage comprises an inlet and an outlet; and The inlet and the outlet are arranged on different sides of the plate.

12. The illumination adjustment device according to claim 9, wherein: The fluid passage comprises an inlet and an outlet; and The inlet and the outlet are arranged on the same quadrant of the plate.

13. The illumination adjustment device according to claim 9, wherein: The fluid passage comprises an inlet and an outlet; and The inlet and the outlet are arranged on different quadrants of the plate.

14. The illumination adjustment device according to claim 9, wherein: The fluid channel defines a plane; and The inlet and / or outlet can be arranged offset from the plane.

15. The illumination adjustment device of claim 9, further comprising a thermal sensor.

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