Semiconductor process chamber and semiconductor process equipment

Abstract

The invention provides a semiconductor process chamber and semiconductor process equipment, the semiconductor process chamber comprises an outer cavity internally provided with a plurality of reaction areas, and each reaction area is provided with a reaction cavity, a bearing device and a sealing assembly; an opening is formed in the bottom end of the reaction cavity; the bearing device comprises a liftable supporting shaft and a bearing part for bearing a wafer, and the supporting shaft is arranged at the bottom of the bearing part and used for supporting the bearing part to lift between a process position in the reaction cavity and a transmission position below the reaction cavity through the opening; the sealing assembly is arranged below the bearing part and connected with the bearing device, the supporting shaft penetrates through the sealing assembly, and the sealing assembly is used for ascending and descending along with ascending and descending of the supporting shaft and makes contact with the bottom end of the reaction cavity when the supporting shaft supports the bearing part to ascend to the process position so as to seal the opening. According to the semiconductor process chamber and the semiconductor process equipment provided by the invention, the sealing stability of the sealing assembly can be improved, and the use stability of the semiconductor process chamber and the semiconductor process equipment can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] The deposition rate of the Plasma Enhanced Atomic Layer Deposition (PEALD) process is slow. The development of a process chamber with multiple reaction chambers has become a better solution to increase the production capacity of PEALD process equipment.

[0003] An existing process chamber with multiple reaction chambers has a transmission chamber and multiple reaction areas, each reaction area is provided with a reaction chamber, a carrying device and an elastic sealing bellows, the multiple reaction chambers are arranged at intervals and are respectively connected to the transmission chamber, the carrying device includes a carrying part and a liftable support shaft, the carrying part is used to carry the wafer, the support shaft is arranged at the bottom of the carrying part, the support shaft is used to support the carrying part to descend to the transmission position in the transmission chamber or rise to the process position in the reaction chamber, when the carrying part descends to the transmission position, the wafer can be transferred, when the carrying part rises to the process position, the semiconductor process of the wafer can be realized, the elastic sealing bellows The bellows is located below the bearing part and surrounds the supporting shaft, and the bottom of the elastic sealing bellows is connected to the bottom of the transmission chamber. When the bearing part descends to the transmission position, the top of the elastic sealing bellows contacts the bottom of the bearing part, and the elastic sealing bellows is in a compressed state. In the process of the bearing part rising from the transmission position to the process position, the elastic sealing bellows gradually stretches under the action of its own elasticity. When the bearing part rises to the process position, the top of the elastic sealing bellows contacts the bottom of the reaction chamber to seal the reaction chamber, thereby preventing multiple reaction chambers from being interconnected through the transmission chamber, causing the air flow fields of the multiple reaction chambers to interfere with each other.

[0004] However, in actual use, since the top of the elastic sealing bellows will contact the bottom of the reaction chamber during the semiconductor process, the elastic sealing bellows will be affected by the high temperature of the reaction chamber for a long time, causing the elastic force of the elastic sealing bellows to gradually decrease. In addition, the elastic force of the elastic sealing bellows will gradually decrease during the frequent compression and elongation process. In addition, due to the elasticity of the elastic sealing bellows, at the moment when the top of the elastic sealing bellows is separated from the bottom of the reaction chamber, the elastic sealing bellows will jump irregularly, which may affect the contaminated particles in the process chamber and may even cause wafer slippage. In addition, the elastic sealing bellows cannot be used for high-temperature processes of 550°C or above. These situations will lead to a reduction in the sealing effect of the elastic sealing bellows, poor sealing stability, and poor stability in the use of semiconductor process chambers and semiconductor process equipment. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process chamber and a semiconductor process equipment, which can improve the sealing stability of the sealing component and can improve the use stability of the semiconductor process chamber and the semiconductor process equipment.

[0006] To achieve the purpose of the present invention, a semiconductor process chamber is provided, comprising an outer chamber, wherein the outer chamber has a plurality of reaction areas, each of the reaction areas is provided with a reaction chamber, a carrying device and a sealing assembly; wherein:

[0007] The bottom end of the reaction chamber has an opening;

[0008] The carrying device comprises a carrying part and a lifting support shaft, wherein the carrying part is used to carry the wafer, and the support shaft is arranged at the bottom of the carrying part, and is used to support the carrying part to lift and lower between a process position in the reaction chamber and a transmission position below the reaction chamber through the opening;

[0009] The sealing assembly is arranged below the bearing portion and connected to the bearing device, and the support shaft passes through the sealing assembly. The sealing assembly is used to rise and fall with the support shaft, and when the support shaft supports the bearing portion to rise to the process position, the sealing assembly contacts the bottom end of the reaction chamber to seal the opening.

[0010] Optionally, the sealing assembly is connected to the support shaft.

[0011] Optionally, the support shaft is provided with an assembly portion, and the assembly portion surrounds the support shaft;

[0012] The sealing assembly comprises a connecting component and an annular sealing body;

[0013] The sealing body surrounds the supporting shaft, and the sealing body is used to seal the opening. When the sealing body seals the opening, a preset gap is provided between the sealing body and the bearing portion, and the sealing body has an annular assembly space extending from the inner ring surface to the outer ring surface and used to accommodate the assembly portion;

[0014] The connecting member is used to connect the sealing assembly and the support shaft by connecting the sealing body and the fitting portion.

[0015] Optionally, the sealing body comprises: an annular first sealing plate, an annular second sealing plate located at a side of the first sealing plate away from the bearing portion and isolated from the first sealing plate, and a side wall located between the first sealing plate and the second sealing plate;

[0016] The first sealing plate is used to seal the opening,

[0017] The side wall connects the first sealing plate and the second sealing plate to form the assembly space between the first sealing plate, the second sealing plate and the side wall, and an assembly opening of the assembly space faces the supporting shaft.

[0018] Optionally, the first sealing plate has a gas channel inside, the first sealing plate has a plurality of first gas outlet holes penetrating into the gas channel on a side facing the bearing portion, and the inner annular surface of the first sealing plate has a first gas inlet hole communicating with the gas channel;

[0019] An air inlet channel is provided in the support shaft, and the support shaft has a second air outlet at a position opposite to the inner annular surface of the first sealing plate, so that the gas in the air inlet channel is transported to the preset gap through the second air outlet, the first air inlet, the gas channel and the first air outlet in sequence.

[0020] Optionally, the gas channel includes a plurality of tributaries extending radially along the first sealing plate and distributed circumferentially along the first sealing plate, and a main airway communicating with the plurality of tributaries;

[0021] The main airway is annular, and the plurality of tributaries are arranged around the main airway;

[0022] The first air inlet is in communication with the main air passage.

[0023] Optionally, the carrying device further includes a plurality of support columns penetrating the carrying portion and being liftable;

[0024] The first sealing plate further has a through hole for each of the supporting columns to pass through, and the orthographic projection of the through hole on the bearing portion coincides with the orthographic projection of the first air outlet on the bearing portion.

[0025] Optionally, a radial dimension of the first air inlet hole gradually decreases from an end of the first air inlet hole close to the support shaft to an end of the first air inlet hole away from the support shaft.

[0026] Optionally, the sealing assembly also includes a first sealing member, the sealing body is provided with an assembly groove, the assembly groove is arranged on one side of the sealing body facing the bottom end of the reaction chamber and is arranged along the circumference of the sealing body, the first sealing member is annular and is assembled in the assembly groove, the first sealing member is used to contact with the bottom end of the reaction chamber when the support shaft supports the bearing part to rise to the process position, and seal the opening by sealing between the sealing body and the bottom end of the reaction chamber.

[0027] Optionally, a radial dimension of the notch of the assembly groove is smaller than a radial dimension of the groove bottom of the assembly groove.

[0028] Optionally, a surface of the sealing body facing the bearing portion is arc-shaped, and a distance between the surface of the sealing body facing the bearing portion and the bearing portion gradually increases from a center to an edge of the surface of the sealing body facing the bearing portion.

[0029] Optionally, the connecting component is also used to adjust the distance between the sealing body and the assembly portion in the axial direction of the support shaft.

[0030] Optionally, the connecting component includes an external threaded component, a middle threaded component and an internal threaded component, the external threaded component has a first external thread and a first internal thread, and the thread direction of the first external thread is opposite to the thread direction of the first internal thread, the external threaded component passes through the sealing body into the assembly space, and is threadedly matched with the sealing body through the first external thread, the middle threaded component has a second external thread, the middle threaded component passes through the interior of the external threaded component, and is threadedly matched with the first internal thread through the second external thread, the internal threaded component has a third external thread, the internal threaded component passes through the interior of the middle threaded component, and is threadedly matched with the assembly portion through the third external thread.

[0031] Optionally, the pitch of the first external thread is greater than the pitch of the first internal thread.

[0032] Optionally, the connecting component also includes a support reinforcement member, which is annular and arranged along the inner circumference of the middle threaded member and fixedly connected to the middle threaded member, and one end of the support reinforcement member abuts against the assembly portion, and the other end abuts against the head of the internal threaded member.

[0033] Optionally, there are multiple connecting components, and the multiple connecting components are arranged at intervals in the circumferential direction of the sealing body.

[0034] The present invention also provides a semiconductor process equipment, including a wafer transfer device and the semiconductor process chamber provided by the present invention, wherein the wafer transfer device is located in the external cavity and is used to take and place wafers to the carrier when each carrier is located at the transfer position.

[0035] The present invention has the following beneficial effects:

[0036] The semiconductor process chamber provided by the present invention can make the sealing component rise and fall with the support shaft by connecting the sealing component provided in each reaction area with the supporting device provided in each reaction area. In this way, when the supporting shaft supports the supporting part to rise to the process position, the sealing component can rise to contact with the bottom end of the reaction chamber to seal the opening at the bottom end of the reaction chamber, thereby avoiding interference between multiple reaction chambers in the semiconductor process, making the multiple reaction chambers independent of each other, and thus improving the consistency and stability of the semiconductor process of wafers in the multiple reaction chambers. Since the sealing component is connected to the supporting device and can rise and fall with the support shaft, compared with the prior art, the sealing component does not need to have an elastic expansion and contraction function itself, that is, there is no need to adopt the elastic sealing bellows of the prior art, thereby avoiding the problems caused by the reduced elastic force of the elastic bellows, irregular jumping and inability to be applied to high-temperature processes of 550°C and above, thereby improving the sealing stability of the sealing component and the use stability of the semiconductor process chamber and the semiconductor process equipment.

[0037] The semiconductor process equipment provided by the present invention, with the help of the semiconductor process chamber provided by the present invention, can avoid mutual interference between multiple reaction chambers when performing semiconductor processes, so that the multiple reaction chambers can be independent of each other, thereby improving the consistency and stability of semiconductor processes performed on wafers in the multiple reaction chambers, and can avoid problems caused by reduced elastic force, irregular jumping of the elastic bellows and inability to be applied to high-temperature processes of 550°C and above, thereby improving the sealing stability of the sealing component and improving the use stability of the semiconductor process chamber and the semiconductor process equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic diagram of the structure of a process chamber provided by an embodiment of the present invention when the carrier is located at the process position;

[0039] Figure 2 A schematic diagram of the structure of a process chamber provided by an embodiment of the present invention when the carrier is located at a transmission position;

[0040] Figure 3 A schematic top view of the three-dimensional structure of the outer cavity provided by an embodiment of the present invention;

[0041] Figure 4 An enlarged structural schematic diagram of a reaction chamber when the carrier part provided by an embodiment of the present invention is located at a process position;

[0042] Figure 5 A schematic diagram of the enlarged structure of the sealing portion between the sealing assembly and the reaction chamber provided in an embodiment of the present invention;

[0043] Figure 6A schematic diagram of the three-dimensional structure of a support shaft provided in an embodiment of the present invention;

[0044] Figure 7 A schematic diagram of a front cross-sectional structure of a support shaft provided in an embodiment of the present invention;

[0045] Figure 8 A schematic diagram of the three-dimensional structure of a sealing assembly provided in an embodiment of the present invention;

[0046] Fig. 9 A schematic diagram of the three-dimensional structure of the connection split body provided in an embodiment of the present invention;

[0047] Fig.10 A bottom-up stereoscopic structural diagram of a sealing assembly and a support shaft provided in an embodiment of the present invention;

[0048] Fig.11 A schematic diagram of a three-dimensional cross-sectional structure of a connecting split body provided in an embodiment of the present invention;

[0049] Fig.12 A schematic diagram of a top view and cross-sectional structure of a connecting split body provided in an embodiment of the present invention;

[0050] Fig.13 A schematic diagram of a partial front cross-sectional structure of a sealing body provided in an embodiment of the present invention;

[0051] Fig.14 A schematic diagram of a three-dimensional cross-sectional structure of a flow-uniform ring provided in an embodiment of the present invention;

[0052] Fig.15 A schematic diagram of a three-dimensional cross-sectional structure of a lower exhaust ring provided in an embodiment of the present invention;

[0053] Fig.16 A schematic diagram of a front cross-sectional structure in which a connecting component provided by an embodiment of the present invention is connected to a sealing body and an assembly portion respectively;

[0054] Fig.17 A schematic diagram of the three-dimensional structure of a connecting component provided in an embodiment of the present invention;

[0055] Fig.18 A schematic diagram of a front cross-sectional structure of a connecting component provided in an embodiment of the present invention;

[0056] Description of reference numerals:

[0057] 1-external cavity; 11-wafer transfer device; 111-transmission part; 12-wafer transfer port; 2-reaction cavity; 3-carrying device; 31-carrying part; 311-through hole; 32-support shaft; 321-inlet channel; 322-inlet port; 323-second outlet port; 324-assembly part; 4-sealing component; 41-assembly groove; 42-connector; 421-connection through hole; 43-connection split body; 432-main airway; 433-branch airway; 434-first outlet port; 435-first air inlet port; 436-assembly space; 437-through hole; 44-second seal Sealing member; 451-first sealing plate; 452-second sealing plate; 453-side wall; 51-uniform flow ring; 511-uniform flow port; 52-upper exhaust ring; 53-lower exhaust ring; 531-outer ring body; 532-inner ring body; 533-connecting ring body; 534-exhaust port; 535-exhaust port; 54-exhaust space; 6-connecting component; 61-external threaded member; 62-middle threaded member; 63-internal threaded member; 64-support reinforcement member; 71-support column; 72-support member; 81-lifting drive source; 82-rotation drive source; 83-external air pipe; 9-upper electrode structure. DETAILED DESCRIPTION

[0058] In order to enable those skilled in the art to better understand the technical solution of the present invention, the semiconductor process chamber and semiconductor process equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0059] like Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a semiconductor process chamber, including an outer chamber 1, a plurality of reaction areas (wherein Figure 1 and Figure 2 In the figure, two reaction areas are taken as an example for illustration), each reaction area is provided with a reaction chamber 2, a carrying device 3 and a sealing component 4; wherein: the bottom end of the reaction chamber 2 has an opening; the carrying device 3 includes a carrying part 31 and a liftable support shaft 32, the carrying part 31 is used to carry the wafer, the support shaft 32 is arranged at the bottom of the carrying part 31, and is used to support the carrying part 31 to rise and fall between the process position of the reaction chamber 2 and the transmission position located below the reaction chamber 2 through the opening; the sealing component 4 is arranged below the carrying part 31 and connected to the carrying device 3, and the support shaft 32 passes through the sealing component 4, the sealing component 4 is used to rise and fall with the support shaft 32, and when the support shaft 32 supports the carrying part 31 to rise to the process position, it contacts with the bottom end of the reaction chamber 2 to seal the opening, so that a sealed space is formed between the sealing component 4 and the reaction chamber 2.

[0060] The semiconductor process chamber provided by the embodiment of the present invention connects the sealing component 4 provided in each reaction area with the carrying device 3 provided in each reaction area, so that the sealing component 4 can be raised and lowered along with the support shaft 32. In this way, when the support shaft 32 supports the carrying part 31 to rise to the process position, the sealing component 4 can rise to contact with the bottom end of the reaction chamber 2 to seal the opening at the bottom end of the reaction chamber 2, thereby avoiding mutual interference between multiple reaction chambers 2 in the semiconductor process, making the multiple reaction chambers 2 independent of each other, and further improving the consistency and stability of the semiconductor process of the wafers in the multiple reaction chambers 2. Since the sealing component 4 is connected to the carrying device 3 and can be raised and lowered along with the support shaft 32, the sealing component 4 does not need to have an elastic expansion and contraction function itself compared with the prior art.

[0061] In other words, there is no need to use the elastic sealing bellows of the prior art, thereby avoiding the problems caused by the reduced elastic force of the elastic bellows, irregular jumping, and inability to be applied to high-temperature processes of 550°C and above, thereby improving the sealing stability of the sealing component 4 and the use stability of the semiconductor process chamber and semiconductor process equipment.

[0062] For example, Figures 1 to 3 As shown, the outer cavity 1 may have four reaction areas, the number of reaction cavities 2, the number of carriers 3 and the number of sealing components 4 may all be four, and each reaction area may be provided with a reaction cavity 2, a carrier 3 and a sealing component 4. Optionally, a wafer transfer port 12 may be provided on one side of the outer cavity 1, a rotatable wafer transfer device 11 may be provided in the outer cavity 1, and the wafer transfer device 11 may have four transfer parts 111. Optionally, the support shaft 32 may be connected to a lifting drive source 81, and the lifting drive source 81 is used to provide a lifting drive force to drive the support shaft 32 to rise and fall.

[0063] During the semiconductor process, the robot outside the outer chamber 1 can transfer the wafer to the outer chamber 1 through the wafer transfer port 12. At this time, the four supporting parts 31 can all be located at the transfer position, and the wafer transfer device 11 can rotate through the four transfer parts 111 to transfer the four wafers to the four supporting parts 31 in sequence. After that, the lifting drive source 81 can provide an upward driving force to drive the support shaft 32 to rise, and the support shaft 32 supports the supporting part 31 to rise through the opening to the process position (such as Figure 1As shown in the figure, during the process of the carrier 31 rising from the transmission position to the process position, the sealing component 4 can rise with the rise of the support shaft 32, and when the carrier 31 rises to the process position, it contacts the bottom end of the reaction chamber 2 to seal the opening, thereby sealing the reaction chamber 2, so that the semiconductor process can be performed on the wafer in a sealed environment, and then the mutual connection and interference between the multiple reaction chambers 2 can be avoided in the semiconductor process, so that the multiple reaction chambers 2 can be independent of each other, thereby improving the consistency and stability of the semiconductor process (for example, deposition of film layers) of the wafers in the multiple reaction chambers 2.

[0064] After the semiconductor process is completed, the lifting drive source 81 can provide a downward driving force to drive the support shaft 32 to descend, and the support shaft 32 supports the bearing portion 31 to descend through the opening to the transmission position (such as Figure 2 As shown in the figure, during the process of the carrying part 31 descending from the process position to the transfer position, the sealing component 4 can descend along with the descending of the support shaft 32, thereby being separated from the bottom end of the reaction chamber 2 and canceling the sealing of the reaction chamber 2. When the carrying part 31 descends to the transfer position, the wafer transfer device 11 can rotate through the four transfer parts 111 to transfer the four wafers from the four carrying parts 31 in sequence to the robot arm that extends into the outer chamber 1 through the transfer port 12. After that, the robot arm can transfer the four wafers in sequence from the outer chamber 1 through the transfer port 12 to the outside of the process chamber.

[0065] It should be noted that the number of reaction areas, the number of reaction chambers 2, the number of carriers 3, the number of sealing assemblies 4 and the number of transmission parts 111 are not limited to four. For example, the number of reaction areas, the number of reaction chambers 2, the number of carriers 3, the number of sealing assemblies 4 and the number of transmission parts 111 can all be two, three, five or more.

[0066] Optionally, the number of the lifting drive sources 81 can be the same as the number of the support shafts 32, and the lifting drive sources 81 can be arranged one by one with the support shafts 32. In this way, each lifting drive source 81 can independently drive the corresponding bearing part 31 to rise and fall, thereby improving the flexibility of controlling the rise and fall of each bearing part 31.

[0067] Optionally, the lifting drive source 81 can be arranged outside the outer cavity 1 and located below the outer cavity 1, the support shaft 32 can pass through the bottom of the outer cavity 1 and be connected to the lifting drive source 81, and the support shaft 32 can be lifted and lowered relative to the outer cavity 1.

[0068] Optionally, a rotational driving source 82 may be further provided outside the outer cavity 1, and the wafer transfer device 11 may pass through the bottom of the outer cavity 1 and be connected to the rotational driving source 82, and the wafer transfer device 11 can rotate relative to the outer cavity 1, and the rotational driving source 82 is used to provide a rotational driving force to the wafer transfer device 11 so as to drive the wafer transfer device 11 to rotate in the outer cavity 1.

[0069] like Figure 1 , Figure 2 and Figure 4 As shown, in one embodiment of the present invention, the sealing assembly 4 can be connected to the support shaft 32.

[0070] That is, the sealing assembly 4 can be connected to the support shaft 32 so that the sealing assembly 4 is disposed below the bearing portion 31 and connected to the bearing device 3 , and the sealing assembly 4 can be raised and lowered along with the support shaft 32 .

[0071] like Figure 1 , Figure 2 , Figure 4 , Figure 6 , Figure 7 As shown, in one embodiment of the present invention, the support shaft 32 may be provided with an assembly portion 324, which surrounds the support shaft 32; the sealing assembly 4 may include a connecting component 6 and a ring-shaped sealing body; the sealing body surrounds the support shaft 32, and the sealing body is used to seal the opening. When the sealing body seals the opening, there is a preset gap between the sealing body and the bearing portion 31, and the sealing body has an annular assembly space 436 extending from the inner ring surface to the outer ring surface and used to accommodate the assembly portion 324; the connecting component 6 is used to connect the sealing assembly 4 and the support shaft 32 by connecting the sealing body and the assembly portion 324.

[0072] That is, the sealing body surrounds the support shaft 32, and the assembly part 324 surrounding the support shaft 32 is accommodated in the assembly space 436 of the sealing body. The connecting component 6 can connect the sealing body and the assembly part 324. The connection between the sealing body and the assembly part 324 can realize the connection between the sealing assembly 4 and the support shaft 32. The sealing opening of the sealing assembly 4 can be realized by sealing the opening of the sealing body, and when the sealing body seals the opening, there is a preset gap between the sealing body and the bearing part 31. Such a design is because after the sealing body seals the opening and the bearing part 31 rises to the process position, the bearing part 31 can heat the wafer. For example, the bearing part 31 can heat the wafer to 550°C. By making the sealing body have a preset gap with the bearing part 31 when sealing the opening, the heat transferred from the bearing part 31 to the sealing body can be reduced, thereby reducing the probability of the sealing body being damaged due to high temperature, thereby improving the service life of the sealing assembly 4, improving the stability of the sealing assembly 4 in sealing the reaction chamber 2, and thus improving the stability of the use of the semiconductor process chamber and the stability of the semiconductor process.

[0073] like Figure 9-12 As shown, optionally, the sealing body may include a connector 42 and a plurality of connector sub-bodies 43 , each connector sub-bodies 43 is arc-shaped, a plurality of connector sub-bodies 43 are combined to form a ring, the connector 42 is ring-shaped, and the plurality of connector sub-bodies 43 are connected via the connector 42 .

[0074] like Figure 8 and Fig.10 As shown, for example, the number of connecting parts 43 can be two, each connecting part 43 is semicircular, the two connecting parts 43 are relatively located on both sides of the support shaft 32, the two connecting parts 43 are combined to form a circular ring, the connecting body 42 is circular, and is respectively connected to the two connecting parts 43, thereby connecting the two connecting parts 43 together.

[0075] However, the number of the connecting parts 43 is not limited thereto, for example, the number of the connecting parts 43 may be three or more. The shape of the combination of the connecting parts 43 and the shape of the connecting body 42 are not limited thereto.

[0076] like Figure 4 , Figure 5 , Figure 8 , Fig. 9 , Figure 11-13 and Fig.16As shown, in one embodiment of the present invention, the sealing body may include: an annular first sealing plate 451, an annular second sealing plate 452 located on the side of the first sealing plate 451 away from the bearing portion and isolated from the first sealing plate 451, and a side wall 453 located between the first sealing plate 451 and the second sealing plate 452; the first sealing plate 451 is used to seal the opening, and the side wall 453 connects the first sealing plate 451 and the second sealing plate 452 to form an assembly space 436 between the first sealing plate 451, the second sealing plate 452 and the side wall 453, and the assembly port of the assembly space 436 faces the support shaft 32.

[0077] That is, the first sealing plate 451 and the second sealing plate 452 are opposite and spaced apart, the side wall 453 is arranged between the first sealing plate 451 and the second sealing plate 452, and the first sealing plate 451 and the second sealing plate 452 are both annular so as to surround the support shaft 32, the side wall 453 is annular and arranged along the circumference of the first sealing plate 451 and the second sealing plate 452, and the assembly space 436 can be formed by the space between the first sealing plate 451, the second sealing plate 452 and the side wall 453. The support shaft 32 can pass through the assembly port of the assembly space 436 to realize that the support shaft 32 passes through the sealing assembly 4. The sealing opening of the sealing body can be realized by the sealing opening of the first sealing plate 451.

[0078] like Figures 4 to 9 and Figures 11 to 13 As shown, in one embodiment of the present invention, the interior of the first sealing plate 451 may have a gas channel, and the first sealing plate 451 has a plurality of first air outlet holes 434 penetrating into the gas channel on the side facing the bearing portion 31, and the inner annular surface of the first sealing plate 451 has a first air inlet hole 435 connected to the gas channel; an air inlet channel 321 is provided in the support shaft 32, and the support shaft 32 may have a second air outlet hole 323 at a position opposite to the inner annular surface of the first sealing plate 451, so that the gas in the air inlet channel 321 is sequentially transported to the preset gap through the second air outlet hole 323, the first air inlet hole 435, the gas channel and the first air outlet hole 434.

[0079] That is, the first sealing plate 451 is provided with a gas channel, a first air inlet 435 and a plurality of first air outlets 434, wherein the gas channel is provided inside the first sealing plate 451, one end of the first air inlet 435 is located on the inner annular surface of the first sealing plate 451, and the other end is communicated with the gas channel, and one end of the first air outlet 434 is located on a side of the first sealing plate 451 facing the bearing portion 31, and the other end is communicated with the gas channel. The support shaft 32 is provided with an air inlet channel 321 and a second air outlet 323, wherein the air inlet channel 321 is provided inside the support shaft 32, one end of the second air outlet 323 is communicated with the air inlet channel 321, and the other end is opposite to one end of the first air inlet 435 located on the inner annular surface of the first sealing plate 451. In actual applications, the gas in the air inlet channel 321 can first enter the second air outlet 323, then enter the first air inlet 435 through the second air outlet 323, then enter the gas channel through the first air inlet 435, then enter the multiple first air outlet holes 434 through the gas channel, and then enter the preset gap through the multiple first air outlet holes 434.

[0080] Such a design is due to the fact that during the semiconductor process, the reaction gas used for the semiconductor process in the reaction chamber 2 may flow toward the bottom of the carrier portion 31 and gather and deposit on the lower surface of the carrier portion 31, resulting in particles being generated in the reaction chamber 2 during the semiconductor process, which may affect the semiconductor process. By delivering gas to the preset gap, the preset gap can have a certain pressure to form a stable environment, thereby reducing the possibility of the reaction gas flowing toward the bottom of the carrier portion 31, and then reducing the particles generated in the reaction chamber 2 due to the aggregation and deposition of the reaction gas, thereby improving the semiconductor process.

[0081] Alternatively, the gas may include nitrogen or an inert gas.

[0082] like Figure 7 As shown, optionally, the support shaft 32 may be further provided with an air inlet 322 , one end of the air inlet 322 is connected to the air inlet channel 321 , and the other end is connected to the air source.

[0083] In practical applications, a gas source can provide gas, and the gas source can be arranged outside the outer cavity 1 and located below the outer cavity 1 to avoid the gas source affecting the environment in the semiconductor process chamber. The gas provided by the gas source can first enter the gas inlet 322 and then enter the gas inlet channel 321 through the gas inlet 322.

[0084] like Figure 1 and Figure 2 As shown, optionally, the air inlet 322 can be connected to the air source through an external air pipe 83.

[0085] like Figure 4 , Figure 5 , Figure 8 , Fig. 9 , Fig.11 , Fig.12 and Fig.13 As shown, in one embodiment of the present invention, the gas channel may include a plurality of branch airways 433 extending radially along the first sealing plate 451 and distributed circumferentially along the first sealing plate 451, and a main airway 432 connected to the plurality of branch airways 433; the main airway 432 is annular, and the plurality of branch airways 433 are arranged around the main airway 432; the first air inlet 435 is connected to the main airway 432.

[0086] In practical applications, a plurality of first air outlet holes 434 may be distributed in the extension direction of each tributary 433, and one end of each first air outlet hole 434 connected to the gas channel may be connected to the tributary 433, that is, the connection between the first air outlet hole 434 and the gas channel may be achieved by connecting to the tributary 433. In this way, the gas passing through the first air inlet hole 435 may first enter the main air channel 432, then enter the plurality of tributaries 433 through the main air channel 432, then enter the plurality of first air outlet holes 434 through the plurality of tributaries 433, and then enter the preset gap through the plurality of first air outlet holes 434, that is, the gas in the first air inlet hole 435 may be transported to the preset gap through the main air channel 432, the plurality of tributaries 433 and the plurality of first air outlet holes 434 in sequence.

[0087] Optionally, the plurality of branch passages 433 may be evenly spaced and distributed along the arc of the connecting body 43. This may improve the uniformity of the gas delivered to the preset gap.

[0088] Optionally, the plurality of first gas outlet holes 434 may be evenly spaced and distributed in the extension direction of the branch channel 433. This may improve the uniformity of the gas delivered to the preset gap.

[0089] like Figure 1 , Figure 2 and Figure 4 As shown, in one embodiment of the present invention, the supporting device 3 may also include a plurality of supporting columns 71 that penetrate the supporting portion 31 and can be raised and lowered; the first sealing plate 451 also has a through hole 437 for each supporting column 71 to pass through, and the orthographic projection of the through hole 437 on the supporting portion 31 coincides with the orthographic projection of the first air outlet 434 on the supporting portion 31.

[0090] In actual application, when the carrier 31 descends to the transfer position, the tops of the multiple support pillars 71 can protrude relative to the top surface of the carrier 31, so that when the wafer is transferred to the top of the carrier 31, the wafer can be placed on the multiple support pillars 71, and then the carrier 31 rises to lift the wafer on the multiple support pillars 71, and then in the process of continuing to rise to the process position, it can carry the multiple support pillars 71 to rise together. When the semiconductor process is completed, the carrier 31 descends, and it can carry the multiple support pillars 71 to descend together. In the process of the carrier 31 descending to the transfer position, the multiple support pillars 71 can gradually rise relative to the carrier 31 until the tops of the multiple support pillars 71 protrude relative to the top surface of the carrier 31, thereby lifting the wafer on the carrier 31, and then the wafer can be taken away from the multiple support pillars 71.

[0091] Optionally, the support column 71 may be a pin.

[0092] like Figure 7 As shown, optionally, a plurality of through holes 311 may be provided on the bearing portion 31 , and the plurality of through holes 311 are provided in one-to-one correspondence with the plurality of via holes 437 , and the corresponding through holes 311 and via holes 437 are used for the support columns 71 to pass through.

[0093] Optionally, the through hole 437 may penetrate the bronchus 433 .

[0094] like Figure 1 and Figure 2 As shown, optionally, a plurality of support members 72 are disposed at the bottom of the outer cavity 1 , and the plurality of support members 72 are distributed at intervals along a circumferential direction and are disposed one-to-one correspondingly to the plurality of support columns 71 .

[0095] In actual applications, when the carrying part 31 is located in the transfer position, the multiple support columns 71 can be supported one by one by the multiple support members 72, so that the tops of the multiple support columns 71 can protrude relative to the top surface of the carrying part 31. When the carrying part 31 descends from the process position to the point where the multiple support columns 71 are against the support members 72, as the carrying part 31 continues to descend, the multiple support columns 71 are supported by the support members 72 and no longer continue to descend with the carrying part 31. The multiple support columns 71 gradually rise relative to the carrying part 31 until the tops of the multiple support columns 71 protrude relative to the top surface of the carrying part 31.

[0096] In an embodiment of the present invention, the material of the support column 71 and the material of the support member 72 may both be ceramic.

[0097] This can prevent the materials of the support column 71 and the support member 72 from polluting the environment in the semiconductor process chamber, and can also prevent the support member 72 from being dented due to repeated impacts of the support column 71, thereby increasing the service life of the support member 72.

[0098] In an embodiment of the present invention, the radial dimension of the first air inlet hole 435 may gradually decrease from an end of the first air inlet hole 435 close to the support shaft 32 to an end of the first air inlet hole 435 far from the support shaft 32 .

[0099] That is to say, the radial dimension of the end of the first air inlet hole 435 close to the support shaft 32 is greater than the radial dimension of the end of the first air inlet hole 435 away from the support shaft 32, and the radial dimension of the first air inlet hole 435 can gradually decrease from the end of the first air inlet hole 435 close to the support shaft 32 to the end of the first air inlet hole 435 away from the support shaft 32, forming a shape similar to a trumpet mouth, so that the first air inlet hole 435 can have a larger range for the gas flowing out through the second air outlet 323 to enter, so that the gas flowing out through the second air outlet 323 can more easily enter the first air inlet hole 435.

[0100] In one embodiment of the present invention, the sealing assembly 4 may also include a first sealing member (not shown in the figure), and the sealing body is provided with an assembly groove 41, which is arranged on one side of the sealing body facing the bottom end of the reaction chamber 2 and is arranged along the circumference of the sealing body. The first sealing member is annular and is assembled in the assembly groove 41. The first sealing member is used to contact the bottom end of the reaction chamber 2 when the support shaft 32 supports the bearing part 31 to rise to the process position, and the opening is sealed by sealing between the sealing body and the bottom end of the reaction chamber 2.

[0101] That is to say, when the support shaft 32 supports the bearing part 31 to rise to the process position, the first seal can contact the bottom end of the reaction chamber 2 to seal the sealing body and the bottom end of the reaction chamber 2. The first seal can seal the sealing body and the bottom end of the reaction chamber 2, so that the opening can be sealed, so that the sealing assembly 4 can seal the opening. The first seal can be limited in the assembly groove 41 by means of the assembly groove 41, so that the first seal can be prevented from moving randomly on the side of the sealing body facing the bottom end of the reaction chamber 2, thereby improving the stability of the first seal in sealing the sealing body and the bottom end of the reaction chamber 2, and improving the stability of the sealing assembly 4 in sealing the opening.

[0102] Optionally, an annular protrusion may be provided on the sealing body, which is annular and arranged along the circumference of the sealing body. The annular protrusion and the connector 42 may serve as two annular side walls 453 of the assembly groove 41 .

[0103] Optionally, the outer diameter of the connecting body 42 may be smaller than the outer diameter of the connecting body 43, the connecting body 42 may be provided with a connecting through hole 421, the connecting body 43 may be provided with a threaded connecting hole, and the connecting body 42 and the connecting body 43 may be connected by a threaded connector.

[0104] Optionally, the connecting through hole 421 may be a countersunk hole, which can prevent the threaded connector from protruding relative to the connecting through hole 421 and interfering with the bottom end of the reaction chamber 2, thereby affecting the contact between the first sealing member and the bottom end of the reaction chamber 2, thereby improving the stability of the first sealing member sealing the sealing body and the bottom end of the reaction chamber 2, and further improving the stability of the sealing assembly 4 sealing the opening.

[0105] Optionally, the first sealing member may be a flexible sealing ring.

[0106] like Fig.13 As shown, optionally, the bronchial passage 433 may extend below the first seal.

[0107] like Fig.13 As shown, optionally, the branch channel 433 can extend to the bottom of the assembly groove 41, so that the branch channel 433 can extend to the bottom of the first seal, so that the gas can flow to the bottom of the first seal, so that the first seal can be cooled by the gas during the semiconductor process, thereby reducing the possibility of sealing failure of the first seal due to high temperature, and increasing the service life of the first seal, thereby increasing the stability of the first seal in sealing the sealing body and the bottom end of the reaction chamber 2, and further increasing the stability of the sealing assembly 4 in sealing the opening. It should be noted that the portion of the branch channel 433 located below the first seal may not be provided with the first air outlet 434.

[0108] like Figure 5 As shown, in one embodiment of the present invention, the radial dimension of the groove opening of the assembly groove 41 may be smaller than the radial dimension of the groove bottom of the assembly groove 41 .

[0109] Such a design is because in actual application, the first seal may adhere to the bottom end of the reaction chamber 2 due to the high temperature of the reaction chamber 2. By making the radial dimension of the notch of the assembly groove 41 smaller than the radial dimension of the groove bottom of the assembly groove 41, the first seal can be limited in the assembly groove 41 with the help of the notch of the smaller assembly groove 41, thereby reducing the possibility of the first seal being pulled out of the assembly groove 41 due to adhesion to the bottom end of the reaction chamber 2, thereby improving the stability of the first seal in sealing between the sealing body and the bottom end of the reaction chamber 2, and improving the stability of the sealing component 4 in sealing the opening.

[0110] Optionally, the radial dimension of the assembly groove 41 may gradually increase from the notch of the assembly groove 41 to the notch of the assembly groove 41 .

[0111] like Figure 4 , Figure 5 and Fig.13As shown, in one embodiment of the present invention, the side of the sealing body facing the bearing portion 31 can be arc-shaped, and the distance between the side of the sealing body facing the bearing portion 31 and the bearing portion 31 gradually increases from the center to the edge of the side of the sealing body facing the bearing portion 31.

[0112] This can facilitate the gas entering the preset gap to flow from the center to the edge of the preset gap, avoiding the gas entering the preset gap from gathering in the center of the preset gap, so that the gas entering the preset gap can be quickly discharged from the edge of the reaction chamber 2.

[0113] In one embodiment of the present invention, the connecting component 6 can also be used to adjust the distance between the sealing body and the assembly portion 324 in the axial direction of the support shaft 32 .

[0114] Such a design is because in actual application, according to the requirements of semiconductor process, the bearing part 31 may be required to be located at different heights in the reaction chamber 2, that is, the bearing part 31 may be required to be located at process positions at different heights. By adjusting the distance between the sealing body and the assembly part 324 in the axial direction of the support shaft 32 with the help of the connecting component 6, the distance between the sealing body and the bearing part 31 can be adjusted, and when the height of the process position where the bearing part 31 is required to be located changes, the sealing body can still contact the bottom end of the reaction chamber 2 to seal the opening. For example, when the height of the process position where the bearing part 31 is required to be located increases, the distance between the sealing body and the bearing part 31 can be increased, so that the sealing body can still contact the bottom end of the reaction chamber 2 to seal the opening, and when the height of the process position where the bearing part 31 is required to be located decreases, the distance between the sealing body and the bearing part 31 can be reduced, so that the sealing body can still contact the bottom end of the reaction chamber 2 to seal the opening.

[0115] Furthermore, in one embodiment of the present invention, the radial dimension of the first air inlet hole 435 can be gradually reduced from one end of the first air inlet hole 435 close to the support shaft 32 to the end of the first air inlet hole 435 away from the support shaft 32, forming a bell-mouth shape. In this way, when the sealing body moves along the axial direction of the support shaft 32, the first air inlet hole 435 can still be opposite to the second air outlet hole 323.

[0116] like Figure 16-Figure 18As shown, in one embodiment of the present invention, the connecting component 6 may include an external threaded component 61, a middle threaded component 62 and an internal threaded component 63, the external threaded component 61 has a first external thread and a first internal thread, and the thread direction of the first external thread is opposite to the thread direction of the first internal thread, the external threaded component 61 penetrates the sealing body to the assembly space 436, and is threadedly matched with the sealing body through the first external thread, the middle threaded component 62 has a second external thread, the middle threaded component 62 penetrates the interior of the external threaded component 61, and is threadedly matched with the first internal thread through the second external thread, the internal threaded component 63 has a third external thread, the internal threaded component 63 penetrates the interior of the middle threaded component 62, and is threadedly matched with the assembly portion 324 through the third external thread.

[0117] In practical applications, the example of clockwise rotation of the external threaded member 61 for tightening and counterclockwise rotation of the external threaded member 61 for loosening is taken. When the height of the sealing body needs to be raised, the external threaded member 61 can be rotated counterclockwise to loosen the external threaded member 61, so that the internal threaded member 63 is subjected to a downward force, thereby reducing the height of the assembly portion 324 in the assembly space 436, thereby achieving the height increase of the sealing body. When the height of the sealing body needs to be lowered, the external threaded member 61 can be rotated clockwise first to reserve a certain amount of adjustment for the subsequent clockwise rotation of the internal threaded member 63, and then the internal threaded member 63 can be rotated clockwise to increase the height of the assembly portion 324 in the assembly space 436, thereby achieving the height decrease of the sealing body. After the end of the internal threaded member 63 that is respectively against the external threaded member 61 and the middle threaded member 62 is against the sealing body, the external threaded member 61 can be fine-tuned again so that the external threaded member 61 is against the sealing body, thereby fastening the sealing body to the assembly portion 324.

[0118] like Fig.16 and Fig.18 As shown, in one embodiment of the present invention, the pitch of the first external thread may be greater than the pitch of the first internal thread, so that fine adjustment of the external thread member 61 can be achieved.

[0119] like Fig.16 and Fig.18 As shown, in one embodiment of the present invention, the connecting component 6 may further include a support reinforcement member 64, which is annular and arranged along the inner circumference of the middle threaded member 62 and is fixedly connected to the middle threaded member 62, and one end of the support reinforcement member 64 abuts against the assembly portion 324, and the other end abuts against the head of the internal threaded member 63. The support reinforcement member 64 can enhance the support of the internal threaded member 63.

[0120] like Fig.10 and Fig.16 As shown, in one embodiment of the present invention, the number of the connecting components 6 can be multiple, and the multiple connecting components 6 are arranged at intervals in the circumferential direction of the sealing body.

[0121] With the help of multiple connecting parts 6, the sealing body and the assembly part 324 can be connected from multiple positions on the circumference of the sealing body, thereby improving the stability of the connection between the sealing body and the assembly part 324, and further improving the stability of the connection between the sealing assembly 4 and the support shaft 32. In addition, with the help of multiple connecting parts 6, the distance between the sealing body and the assembly part 324 in the axial direction of the support shaft 32 can be adjusted from multiple positions on the circumference of the sealing body, thereby adjusting the sealing body to be parallel to the assembly part 324, and then adjusting the sealing body to be parallel to the bearing part 31, thereby improving the sealing effect of the sealing assembly 4 in sealing the reaction chamber 2.

[0122] Optionally, an exhaust component may be provided in the reaction chamber 2 , and the exhaust component is used to exhaust the gas in the reaction chamber 2 .

[0123] That is to say, the reaction gas entering the reaction chamber 2 and the gas entering the preset gap can be exhausted from the reaction chamber 2 to the outside of the reaction chamber 2 through the exhaust component.

[0124] like Figure 1 , Figure 2 , Figure 4 , Fig.14 and Fig.15 As shown, optionally, the exhaust assembly may include a flow-uniform ring 51, an upper exhaust ring 52 and a lower exhaust ring 53, the lower exhaust ring 53 is annular and arranged along the inner circumference of the reaction chamber 2, the upper exhaust ring 52 is arranged on the lower exhaust ring 53, and is annularly arranged along the inner circumference of the reaction chamber 2, the flow-uniform ring 51 is arranged on the lower exhaust ring 53, and is annularly arranged inside the upper exhaust ring 52, an exhaust space 54 is formed between the flow-uniform ring 51, the upper exhaust ring 52 and the lower exhaust ring 53, a plurality of flow-uniform ports 511 are spaced apart in the circumferential direction of the flow-uniform ring 51, the flow-uniform ports 511 are connected to the exhaust space 54, and are used to discharge the reaction gas in the reaction chamber 2 to the exhaust space 54, the exhaust space 54 is connected to the outside of the reaction chamber 2, and is used to discharge the reaction gas to the outside of the reaction chamber 2.

[0125] In practical applications, the exhaust space 54 can be connected to the exhaust device outside the process chamber. Under the exhaust action of the exhaust device, the reaction gas located above the supporting part 31 in the reaction chamber 2 can be discharged into the exhaust space 54 through multiple uniform flow ports 511, and then be extracted to the outside of the process chamber through the exhaust space 54, so that the reaction gas in the reaction chamber 2 can be discharged to the outside of the reaction chamber 2. In addition, by arranging multiple uniform flow ports 511 at intervals in the circumferential direction of the uniform flow ring 51, the reaction gas can be discharged to the exhaust space 54 from multiple locations in the circumferential direction of the uniform flow ring 51 through the uniform flow ports 511, thereby increasing the speed of the reaction gas being discharged to the exhaust space 54, increasing the speed of the reaction gas being discharged to the outside of the process chamber, reducing the possibility of the reaction gas being accumulated and deposited at the edge of the reaction chamber 2, and then reducing the particles generated in the reaction chamber 2 due to the accumulation and deposition of the reaction gas, thereby improving the semiconductor process.

[0126] Optionally, a plurality of flow equalizing ports 511 may be evenly spaced and arranged in the circumferential direction of the flow equalizing ring 51 .

[0127] Optionally, the flow uniforming port 511 may be U-shaped.

[0128] like Fig.15 As shown, optionally, the lower exhaust ring 53 may include an outer ring body 531, an inner ring body 532 and a connecting ring body 533, the outer ring body 531 is annular and is arranged around the annular inner ring body 532, the outer ring body 531 and the inner ring body 532 are connected by the annular connecting ring body 533, the inner diameter of the inner ring body 532 is larger than the outer diameter of the bearing part 31, and a plurality of exhaust ports 534 are arranged at intervals in the circumferential direction of the inner ring body 532, the exhaust ports 534 are connected to the exhaust space 54, and are used to discharge the gas to the exhaust space 54, and the outer ring body 531 is provided with an exhaust port 535 for connecting to the exhaust device outside the reaction chamber 2, and is used to discharge the gas to the outside of the reaction chamber 2.

[0129] By making the inner diameter of the inner ring body 532 larger than the outer diameter of the bearing portion 31, when the bearing portion 31 is in the process position, a gap can be provided between the inner ring body 532 and the bearing portion 31, so that the gas in the preset gap below the bearing portion 31 can flow into the gap between the inner ring body 532 and the bearing portion 31, and then under the pumping action of the pumping device, the gas can be discharged into the exhaust space 54 through the multiple exhaust ports 534 of the inner ring body 532, and then be pumped out of the process chamber through the exhaust space 54 through the pumping port 535, so that the gas in the reaction chamber 2 can be discharged out of the reaction chamber 2. In addition, by arranging multiple exhaust ports 534 at intervals in the circumferential direction of the inner ring body 532, the gas can be discharged into the exhaust space 54 from multiple locations in the circumferential direction of the inner ring body 532 through the exhaust ports 534, so that the speed of gas being discharged into the exhaust space 54 can be increased, the speed of gas being discharged out of the process chamber can be increased, the possibility of gas escaping to the top of the bearing portion 31 can be reduced, and the possibility of gas interfering with the semiconductor process can be reduced, thereby improving the semiconductor process.

[0130] Optionally, a plurality of exhaust ports 534 may be evenly spaced apart in the circumferential direction of the inner ring body 532 .

[0131] like Fig.15 As shown, optionally, in the circumferential direction of the inner ring body 532 , from close to the air suction port 535 to far away from the air suction port 535 , the radial size of the exhaust port 534 may gradually increase.

[0132] Such a design is due to the fact that, on the circumference of the inner ring body 532, from close to the exhaust port 535 to far away from the exhaust port 535, the suction force of the exhaust device gradually decreases. By gradually increasing the radial size of the exhaust port 534 from close to the exhaust port 535 to far away from the exhaust port 535 on the circumference of the inner ring body 532, the gas can be quickly extracted from multiple locations on the circumference of the inner ring body 532 to the exhaust space 54.

[0133] like Figure 4 As shown, optionally, the sealing assembly 4 may further include a second sealing member 44, which is telescopically disposed in the assembly space 436 to seal between the support shaft 32 and the sealing body.

[0134] Such a design is because the sealing body is arranged on the support shaft 32 so that it can move along the axial direction of the support shaft 32. Therefore, there may be a gap between the support shaft 32 and the sealing body, resulting in the possibility that the reaction chamber 2 and the outer chamber 1 are connected through the gap. By arranging the second sealing member 44 in the assembly space 436, the support shaft 32 and the sealing body can be sealed by means of the second sealing member 44, so that the reaction chamber 2 and the outer chamber 1 are isolated. In addition, by making the second sealing member 44 retractable, when the sealing body moves along the axial direction of the support shaft 32, the second sealing member 44 can be retracted and extended to keep the support shaft 32 and the sealing body sealed.

[0135] like Figure 4 As shown, optionally, the second seal 44 can be annular and arranged around the support shaft 32, and one end of the second seal 44 is sealed and connected to the assembly portion 324, and the other end is sealed and connected to the sealing body. Such a design can achieve the sealing between the support shaft 32 and the sealing body by the second seal 44.

[0136] Optionally, the second sealing member 44 may include a bellows, one end of which may be welded and sealed with the assembly portion 324, and the other end of which may be welded and sealed with the sealing body, thereby sealing between the support shaft 32 and the sealing body.

[0137] like Figure 1 and Figure 2 As shown, optionally, the semiconductor process chamber may further include an upper electrode structure 9, which is disposed on the top of the plurality of reaction chambers 2 and is used to provide radio frequency energy for the semiconductor process and excite the reaction gas to form plasma.

[0138] Optionally, the semiconductor process chamber provided by the embodiment of the present invention may be applicable to a plasma enhanced atomic layer deposition process.

[0139] like Figure 1-Figure 3 As shown, an embodiment of the present invention further provides a semiconductor process equipment, including a wafer transfer device 11 and a semiconductor process chamber as provided in an embodiment of the present invention, wherein the wafer transfer device 11 is located in the outer cavity 1, and is used to take and place wafers into and out of the carrier parts 31 when each carrier part 31 is in a transfer position.

[0140] The semiconductor process equipment provided by the embodiment of the present invention, with the help of the semiconductor process chamber provided by the embodiment of the present invention, can avoid mutual interference between multiple reaction chambers 2 when performing semiconductor processes, so that the multiple reaction chambers 2 can be independent of each other, thereby improving the consistency and stability of the semiconductor process of wafers in the multiple reaction chambers 2, and can avoid the problems caused by the reduction of the elastic force of the elastic bellows, irregular jumping and inability to be applied to high-temperature processes of 550°C and above, thereby improving the sealing stability of the sealing component 4, and can improve the use stability of the semiconductor process chamber and the semiconductor process equipment.

[0141] In summary, the semiconductor process chamber and the semiconductor process equipment provided by the embodiments of the present invention can improve the sealing stability of the sealing component 4 and can improve the use stability of the semiconductor process chamber and the semiconductor process equipment.

[0142] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process chamber, characterized in that: It comprises an outer cavity, wherein the outer cavity has a plurality of reaction areas, and each of the reaction areas is provided with a reaction cavity, a carrying device and a sealing component; wherein: The bottom end of the reaction chamber has an opening; The carrying device comprises a carrying part and a lifting support shaft, wherein the carrying part is used to carry the wafer, and the support shaft is arranged at the bottom of the carrying part, and is used to support the carrying part to lift and lower between a process position in the reaction chamber and a transmission position below the reaction chamber through the opening; The sealing assembly is arranged below the bearing portion and connected to the bearing device, and the support shaft passes through the sealing assembly. The sealing assembly is used to rise and fall with the support shaft, and when the support shaft supports the bearing portion to rise to the process position, the sealing assembly contacts the bottom end of the reaction chamber to seal the opening.

2. The semiconductor process chamber according to claim 1, characterized in that: The sealing assembly is connected to the support shaft.

3. The semiconductor process chamber according to claim 2, characterized in that: The support shaft is provided with an assembly portion, and the assembly portion surrounds the support shaft; The sealing assembly comprises a connecting component and an annular sealing body; The sealing body surrounds the supporting shaft, and the sealing body is used to seal the opening. When the sealing body seals the opening, a preset gap is provided between the sealing body and the bearing portion, and the sealing body has an annular assembly space extending from the inner ring surface to the outer ring surface and used to accommodate the assembly portion; The connecting member is used to connect the sealing assembly and the support shaft by connecting the sealing body and the fitting portion.

4. The semiconductor process chamber according to claim 3, characterized in that: The sealing body comprises: an annular first sealing plate, an annular second sealing plate located at a side of the first sealing plate away from the bearing portion and isolated from the first sealing plate, and a side wall located between the first sealing plate and the second sealing plate; The first sealing plate is used to seal the opening, The side wall connects the first sealing plate and the second sealing plate to form the assembly space between the first sealing plate, the second sealing plate and the side wall, and an assembly opening of the assembly space faces the supporting shaft.

5. The semiconductor process chamber according to claim 4, characterized in that: The first sealing plate has a gas passage inside, the first sealing plate has a plurality of first gas outlet holes penetrating into the gas passage on a side facing the bearing portion, and the inner annular surface of the first sealing plate has a first gas inlet hole communicating with the gas passage; An air inlet channel is provided in the support shaft, and the support shaft has a second air outlet at a position opposite to the inner annular surface of the first sealing plate, so that the gas in the air inlet channel is transported to the preset gap through the second air outlet, the first air inlet, the gas channel and the first air outlet in sequence.

6. The semiconductor process chamber according to claim 5, characterized in that: The gas channel includes a plurality of tributaries extending radially along the first sealing plate and distributed circumferentially along the first sealing plate, and a main airway communicating with the plurality of tributaries; The main airway is annular, and the plurality of tributaries are arranged around the main airway; The first air inlet is in communication with the main air passage.

7. The semiconductor process chamber according to claim 5, characterized in that: The carrying device further comprises a plurality of support columns penetrating the carrying portion and being liftable; The first sealing plate further has a through hole for each of the supporting columns to pass through, and the orthographic projection of the through hole on the bearing portion coincides with the orthographic projection of the first air outlet on the bearing portion.

8. The semiconductor process chamber according to claim 5, characterized in that: The radial dimension of the first air inlet hole gradually decreases from an end of the first air inlet hole close to the support shaft to an end of the first air inlet hole far from the support shaft.

9. The semiconductor process chamber according to claim 3, characterized in that: The sealing assembly also includes a first sealing member, the sealing body is provided with an assembly groove, the assembly groove is arranged on a side of the sealing body facing the bottom end of the reaction chamber and is arranged along the circumference of the sealing body, the first sealing member is annular and is assembled in the assembly groove, and the first sealing member is used to contact with the bottom end of the reaction chamber when the support shaft supports the bearing part to rise to the process position, and the opening is sealed by sealing between the sealing body and the bottom end of the reaction chamber.

10. The semiconductor process chamber according to claim 9, characterized in that: The radial dimension of the groove opening of the assembly groove is smaller than the radial dimension of the groove bottom of the assembly groove.

11. The semiconductor process chamber according to claim 10, characterized in that: A surface of the sealing body facing the bearing portion is arc-shaped, and a distance between the surface of the sealing body facing the bearing portion and the bearing portion gradually increases from a center to an edge of the surface of the sealing body facing the bearing portion.

12. The semiconductor process chamber according to claim 3, characterized in that: The connecting component is also used to adjust the distance between the sealing body and the fitting portion in the axial direction of the support shaft.

13. The semiconductor process chamber according to claim 12, wherein: The connecting component includes an external threaded component, a middle threaded component and an internal threaded component, the external threaded component has a first external thread and a first internal thread, and the thread direction of the first external thread is opposite to the thread direction of the first internal thread, the external threaded component passes through the sealing body to the assembly space, and is threadedly matched with the sealing body through the first external thread, the middle threaded component has a second external thread, the middle threaded component passes through the interior of the external threaded component, and is threadedly matched with the first internal thread through the second external thread, the internal threaded component has a third external thread, the internal threaded component passes through the interior of the middle threaded component, and is threadedly matched with the assembly portion through the third external thread.

14. The semiconductor process chamber according to claim 13, wherein: The pitch of the first external thread is greater than the pitch of the first internal thread.

15. The semiconductor process chamber according to claim 13, wherein: The connecting component also includes a support reinforcement member, which is annular and arranged along the inner circumference of the middle threaded member and fixedly connected to the middle threaded member. One end of the support reinforcement member abuts against the assembly portion, and the other end abuts against the head of the internal threaded member.

16. The semiconductor process chamber according to claim 3, wherein: The number of the connecting components is plural, and the connecting components are arranged at intervals in the circumferential direction of the sealing body.

17. A semiconductor process equipment, characterized in that: It comprises a wafer transfer device and a semiconductor process chamber as described in any one of claims 1 to 16, wherein the wafer transfer device is located in the external cavity and is used for taking and placing wafers into and out of the carrying parts when each of the carrying parts is located in the transfer position.

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