Gas uniformizing device and semiconductor process equipment

Abstract

The invention discloses a gas uniformizing device and semiconductor process equipment. The gas uniformizing device comprises a substrate; the first radial gas uniformizing disc is a barrel-shaped cavity installed on the base plate, first gas uniformizing holes are distributed in the first side wall of the first radial gas uniformizing disc, and the first radial gas uniformizing disc is connected with a gas inlet pipe; the second radial gas uniformizing disc is a cylindrical cavity covering the first radial gas uniformizing disc, and the second radial gas uniformizing disc is mounted on the base plate through a revolute pair; second gas uniformizing holes are distributed in the second side wall of the second radial gas uniformizing disc. And the first driving mechanism is mounted on the base plate so as to drive the second radial gas uniformizing disc to rotate. The gas uniformizing device provided by the invention has relatively good adaptability to the initial flow velocity of the process gas.

Description

Technical Field

[0001] The present invention relates to a gas homogenizing device used in semiconductor process equipment, and also relates to a semiconductor process equipment equipped with the gas homogenizing device. Background Art

[0002] Most semiconductor process equipment requires process gases, such as Chemical Vapor Deposition (CVD) equipment, plasma injection equipment, oxidation equipment, heat treatment equipment, packaging equipment, etc. For example, chemical vapor deposition equipment is a chemical technology used to produce high-purity solid materials. It mainly exposes a wafer, such as a substrate, to one or more different precursors, and chemical reactions and / or chemical decompositions occur on the surface of the base to produce the desired film. Different by-products are usually produced during the reaction process, but most of them will be taken away with the extraction of the process gas and will not remain in the reaction chamber.

[0003] For example, chemical vapor deposition processes require that the prepared thin films reach the micron level or even the nanometer level. This requires that the aerosol composition and flow state that the substrate contacts during the chemical vapor deposition process are relatively uniform. The process gas is generally supplied by pipeline. The typical feature of pipeline supply is that the process gas flow has a certain inertia and tends to spread over a relatively long distance in the direction of gas supply, while in other directions there is only a small amount of process gas obtained based on diffusion or turbulence. This is obviously an undesirable result for processes such as chemical vapor deposition.

[0004] In view of this, some semiconductor process equipment that has high requirements on, for example, uniformity of process gas supply is generally equipped with a gas homogenizing device, so that a stable and substantially uniform gas flow in all directions is roughly formed after the gas enters the reaction chamber.

[0005] A common gas homogenizing device is a gas homogenizing device with a multi-stage orifice plate structure, specifically, a pipeline is set in the gas supply direction, and the pipeline is arranged with multi-stage orifice plates in the axial direction. The orifice plates divide the pipeline into several gas homogenizing chambers, so that the process gas can achieve the first-level homogenization through the first-stage orifice plate, and so on. The number of orifice plates can achieve the number of levels of homogenization. As mentioned above, the process gas entering through the air inlet pipe generally has a certain flow rate. For the fluid, its proximity principle attribute is very obvious, that is, the closer the hole is to the air inlet pipe, the greater the flow rate is. However, this phenomenon is difficult to avoid whether holes or slits are used, especially the gas homogenizing device inevitably needs to use holes or slits to achieve homogenization.

[0006] Furthermore, the cross-sectional area of ​​the holes on the orifice plate at the front stage is relatively large, and the number is relatively small, while the cross-sectional area of ​​the holes on the orifice plate at the rear stage is relatively small, but the number is relatively large, so as to gradually reduce the influence of the proximity effect, so that the process gas is gradually dispersed and homogenized in the multi-stage homogenization chamber. However, the homogenization device using this method for homogenization often needs to be configured with five or more stages to meet the desired homogenization requirements.

[0007] In view of this, in some implementations, relatively special homogenizing holes are used on the orifice plate, mainly long holes (similar to slits), and the long holes need to be arranged in a predetermined array, so that the process gas passing through the current orifice plate can have a certain degree of dispersion and achieve homogenization. This type of homogenizing device is generally relatively complex.

[0008] It can also be known from the above description that for process gases with different initial flow rates, after entering the first-stage homogenization chamber, the radial spreading ability of the process gas will be different. Similarly, the homogenization ability of each stage of the homogenization chamber for the process gas is related to the initial flow rate of the process gas. That is, the current homogenization device may meet the homogenization of the process gas with a first flow rate, but may hardly meet the homogenization of the process gas with a second flow rate. This is a defect that is difficult to overcome for such homogenization equipment. Summary of the invention

[0009] The object of the present invention is to provide a gas homogenizing device with relatively good adaptability to the initial flow rate of process gas. The present invention also relates to a semiconductor process equipment equipped with the gas homogenizing device.

[0010] According to a first aspect of an embodiment of the present invention, there is provided a gas homogenizing device, comprising: substrate; A first radial gas-distributing disk is a cylindrical cavity installed on the substrate, a first side wall of the first radial gas-distributing disk is provided with first gas-distributing holes, and the first radial gas-distributing disk is connected to an air inlet pipe; The second radial gas-distributing disk is a cylindrical cavity covering the first radial gas-distributing disk, and the second radial gas-distributing disk is mounted on the substrate through a rotating pair; the second side wall of the second radial gas-distributing disk is provided with second gas-distributing holes; and The first driving mechanism is installed on the base plate to drive the second radial gas uniforming disk to rotate.

[0011] Optionally, the distribution form of the second air-leveling holes on the second radial air-leveling disk is a ring array of second air-leveling holes arranged evenly along the axial direction on the second radial air-leveling disk; A blade extending axially is disposed on one side of each second air-distributing hole row to assist in generating a centrifugal effect.

[0012] Optionally, the blades form a swirl blade set through an annular array to adapt to the rotation direction of the second radial air distribution disk.

[0013] Optionally, an axial gas-distributing disk fixed on the substrate is further covered outside the second radial gas-distributing disk; Correspondingly, the upper cover plate of the axial gas distribution disk is distributed with third gas distribution holes.

[0014] Optionally, the substrate is provided with a central hole, and the first cover plate of the first radial gas-distributing disk and the second cover plate of the second radial gas-distributing disk are both provided with a central through hole; Providing a support shaft penetrating through the central hole and the central through hole for supporting the substrate; A second drive mechanism is provided for driving the support shaft to rotate.

[0015] Optionally, the support shaft and the second radial air distribution disk have opposite directions of rotation.

[0016] Optionally, the second radial gas uniformizing device is mounted on the substrate via a thrust bearing and has a connector extending to the second side of the substrate; The second side is a side opposite to the side where the second radial gas homogenizing device is located; Correspondingly, a gear ring is installed on the connecting head to drive the second radial air homogenizing device to rotate through a gear transmission mechanism.

[0017] Optionally, the first driving mechanism and the second driving mechanism share a power machine; Correspondingly, the power machine receives power through a power shaft; Active drive components of the first drive mechanism and the second drive mechanism are mounted on the power shaft.

[0018] Optionally, the substrate is a split water-cooling flange, and the water-cooling flange includes: a water-cooled annular disk, the annular hole of which constitutes the seat hole of the thrust bearing; and The center disk is located in the annular hole to cooperate with the corresponding thrust bearing from the inside.

[0019] According to a second aspect of an embodiment of the present invention, a semiconductor process equipment is provided, comprising the gas homogenizing device described in the first aspect of an embodiment of the present invention.

[0020] Different from the prior art in which the functional components for gas homogenization are mainly used to homogenize gas in the axial direction, the gas homogenization device according to the embodiment of the present invention first performs gas homogenization in the radial direction. First, a first radial gas homogenization disk is provided for introducing process gas and performing the first gas homogenization to complete the preliminary gas homogenization, and then a second radial gas homogenization disk is provided to cover the first radial gas homogenization disk to provide the second gas homogenization. The part used for gas homogenization is the side wall of the first radial gas homogenization disk and the second radial gas homogenization disk, and the gas supply direction is usually axial. After the process gas enters the first radial gas homogenization disk, radial dispersion will occur, which is easier to obtain a relatively high gas homogenization efficiency than the traditional radial gas homogenization components. In addition, the second radial gas homogenization disk is configured as a rotating disk, so that the rotation speed of the second radial gas homogenization disk can be adjusted accordingly according to the flow rate of the process gas, etc., overcoming the problem that the gas homogenization is difficult to adjust due to the change of the process gas flow rate, and has a better adaptability to the initial flow rate of the process gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Schematic diagram of the structure of a gas homogenizing device in one embodiment.

[0022] Figure 2 FIG. 1 is a schematic diagram of the structure of a gas homogenizing device in another embodiment.

[0023] Figure 3 Schematic diagram of the structure of the inverted gas distribution disk (excluding the cover) in one embodiment.

[0024] In the figure: 1. driven sprocket, 2. air inlet pipe, 3. cooling water inlet pipe, 4. gear ring, 5. cooling flange, 6. thrust bearing, 7. second air-distributing hole, 8. reverse air-distributing disk, 9. cover, 10. base, 11. forward shaft, 12. fixed air-distributing disk, 13. first air-distributing hole, 14. cooling water outlet pipe, 15. driving gear, 16. magnetic fluid, 17. driving sprocket, 18. power shaft, 19. motor, 20. third air-distributing hole, 21. axial air-distributing disk, 22. stopper, 23. blade. DETAILED DESCRIPTION

[0025] It should be known that for semiconductor process equipment, such as CVD equipment, its main body is a rotating body with definite axial, radial and circumferential directions.

[0026] The process gas pipe is generally connected to the furnace plug of the furnace body by axial access, such as Figure 1 and Figure 2The cooling flange 5 shown in the figure can be used as the lower plug of the furnace body, and can also be understood as the lower furnace cover. In the figure, the air inlet pipe 2 is the process gas air inlet pipe, which has been mentioned in the background technology part. Because it is connected by pipeline and the process gas has a certain flow rate in the air inlet pipe 2, when it is directly sent into the furnace chamber, there will be obvious runoff phenomenon, that is, it has an obvious path and cannot produce a relatively uniform contact with the workpiece. Under this condition, semiconductor process equipment that needs to use gas generally uses a gas homogenizing device to homogenize the process gas introduced by the air inlet pipe 2, which can also be understood as eliminating the runoff phenomenon.

[0027] In some embodiments of the present invention, only radial gas homogenization is used to achieve gas homogenization, while in other embodiments, a radial gas homogenization device is used in conjunction with an axial gas homogenization device to achieve better gas homogenization effect.

[0028] As the installation base, the main body of the base plate is a circular plate structure and is mainly used to construct the lower furnace cover, such as Figure 1 and 2 The cooling flange 5 shown in the figure is installed at the lower end of the furnace body by flange connection.

[0029] In view of the fact that the process temperature in the furnace body is generally relatively high, the lower furnace cover adopts the form of a cooling flange 5 to protect the components located outside the lower furnace cover, such as the motor 19 and two transmission mechanisms driven by the motor 19 .

[0030] Considering that the cooling flange 5 may affect the stability of the process temperature in the furnace, in some embodiments, the lower furnace cover can be made of insulating material or at least contain an insulating layer, so as to reduce the negative impact on the motor 19, etc. by thermal isolation.

[0031] exist Figure 1 and Figure 2 In the illustrated structure, there are two radial air-distributing disks, and the inner radial air-distributing disk is shown as a fixed air-distributing disk 12 in the figure, and is denoted as a first radial air-distributing disk.

[0032] As can be seen from the figure, the fixed gas-distributing disk 12 is a cylindrical gas-distributing disk with an upper barrel bottom. Although it also has an inner tube body for cooperating with the forward rotating shaft 11 in the figure, the inner tube body does not constitute a functional structure for gas distribution. The following description is based on the functional structure of the fixed gas-distributing disk 12, and the forward rotating shaft 11 described in the figure does not necessarily need to be configured as a rotating shaft. Under this condition, the inner tube body is not a necessary configuration.

[0033] The first radial gas-distributing disk, taking the fixed gas-distributing disk 12 as an example, has an upper barrel bottom as described above, and its lower end is fixed on, for example, the cooling flange 5, and the fixed gas-distributing disk 12 is sealed from the lower end. The upper barrel bottom is a sealing plate, and the barrel body portion of the fixed gas-distributing disk 12 is recorded as a first side wall, and the first side wall is evenly provided with first gas-distributing holes 13 in the figure.

[0034] The opening method of the first air-distributing holes 13 on the first radial air-distributing disk can be referred to Figure 3 Regarding the opening method of the inverted gas distribution disk 8. Figure 3 As can be seen in the figure, the second gas-distributing holes 7 are arranged in a row of four, and then in a circular array with the axis of the inverted gas-distributing disk 8 as the axis. This hole-opening method is conducive to drilling holes using, for example, a row drill, and is also conducive to preliminary gas-distributing in the axial direction (row direction).

[0035] In addition, the distribution density of the first air uniforming holes 13 on the first radial air uniforming disk can be slightly smaller than the distribution density of the second air uniforming holes 7 on the second radial air uniforming disk. Since the barrel of the second radial air uniforming disk is larger, even if the distribution density of the first air uniforming holes 13 and the second air uniforming holes 7 are the same and the aperture is the same, the side wall area of ​​the second radial air uniforming disk is larger, and the number of the second air uniforming holes 7 will be relatively large, thereby satisfying the characteristic of step-by-step homogenization.

[0036] The term “slightly smaller than” can be understood to mean that under the condition of the same distribution density, the aperture of the second air-uniform hole 7 is relatively larger.

[0037] In some embodiments, the second air-leveling holes 7 and the first air-leveling holes 13 may have the same aperture, so as to facilitate processing using, for example, the same set of drills to improve the processability of the molding. Under this condition, the air-leveling effect can be improved by increasing the number of second air-leveling holes 7.

[0038] In addition, the distribution density of the second air-distributing holes 7 can be increased, but the distribution density should not be too large, otherwise the air-distributing effect will be lost. The opening rate on the side wall of the first radial air-distributing disk and the second radial air-distributing disk should not be greater than 15%.

[0039] In addition, Figure 1 and Figure 2 In the embodiment, the fixed gas-distributing disk 12 used as the first radial gas-distributing disk is connected with an inlet pipe 12 for introducing the process gas.

[0040] The access direction of the air inlet pipe 12 is axial, and the process gas flow will directly impact the bottom of the barrel of the fixed gas uniformity disk to produce dispersion and reflux. At the same time, the reflux and the air inlet will collide to produce secondary dispersion.

[0041] The number of intake pipes 12 is Figure 1The illustrated structure has only one inlet pipe, but in some embodiments, multiple inlet pipes 12 may be provided. The multiple inlet pipes 12 are evenly arranged at the position corresponding to the first radial air homogenizing device on the cooling flange 5, for example, and specifically are arranged in a single-ring annular array around the axis of the cooling flange 5.

[0042] A plurality of intake pipes 12 can be connected by a connecting pipe, so as to complete the first stage of gas homogenization on the intake pipe 12 side.

[0043] exist Figure 1 and Figure 2 In the illustrated structure, the inverted gas-distributing disk 8 used as the second radial gas-distributing disk is also a cylindrical cavity, and the second gas-distributing holes 7 are distributed on the second side wall provided by the inverted gas-distributing disk. Figure 3 The structure shown in the example is relatively clear and will not be elaborated here.

[0044] In addition, Figure 3 In the illustrated structure, the upper end of the inverted gas distribution plate 8 has a stopper to fit Figure 1 The cover 9 shown in FIG.

[0045] The cover 9 has a central through hole for, for example, access of the forward rotating shaft 11 .

[0046] In a preferred embodiment, the first gas-uniform holes 13 and the second gas-uniform holes 7 are staggered so that a portion of the gas discharged through the first gas-uniform holes 13 directly hits the inner wall surface of the second radial gas-uniform disk, thereby achieving a relatively good gas-uniform effect.

[0047] Furthermore, a first driving mechanism is provided, which is mounted on the substrate to drive the second radial gas homogenizing disk to rotate, thereby reducing the effect of flow rate on gas homogenization according to changes in the intake volume, so as to improve adaptability to changes in process gas flow rate.

[0048] The rotation of the second radial gas-distributing disk can mainly generate a certain centrifugal effect, thereby adjusting the rate at which the gas in the chamber of the second radial gas-distributing disk is discharged.

[0049] Further, as previously mentioned and with reference to Figure 3As shown, the distribution form of the second air-leveling holes on the second radial air-leveling disk is a circular array of second air-leveling hole rows uniformly arranged along the axial direction on the second radial air-leveling disk; and an axially extending blade 23 is provided on one side of each second air-leveling hole row to assist in generating a centrifugal effect. This structure is similar to a centrifugal fan, the principle of which is to use centrifugal force to transport the gas entering through the air inlet in a radial direction. The outlet air speed is adjusted by changing the rotation speed. In the embodiment of the present invention, with the help of this principle, blades are used to isolate radial channels, making the centrifugal effect more obvious, so that better adjustment can be obtained under the condition that the rotation speed of the second radial air-leveling disk is relatively small, according to the changes in the intake volume and intake speed.

[0050] The blades in centrifugal fans are basically radial blades (used to describe blades that extend radially). Figure 3 The blades 23 used in the illustrated structure are also radial blades, but in some implementations, other types of blade arrangements may be used, such as a vortex blade group formed by an annular array of blades to adapt to the rotation direction of the second radial air distribution disk, thereby easily obtaining a better effect suitable for low-speed adjustment.

[0051] exist Figure 2 In the illustrated structure, an axial gas-distributing disk 21 fixed on the substrate is also covered outside the inverted gas-distributing disk 8 used as the second radial gas-distributing disk. The axial gas-distributing disk 21 is also a barrel-shaped structure. The barrel bottom of the axial gas-distributing disk 21 is on the top, and the barrel mouth is connected to the Figure 2 On the cooling flange 5 shown in FIG.

[0052] Correspondingly, third air-distributing holes 20 are distributed on the upper cover plate of the axial air-distributing disk 21 .

[0053] In the above description, the second radial gas distribution disk can rotate. In some implementations, the process object, that is, Figure 1 and Figure 2 The rotation of the substrate 10 shown in the figure is to further mix the process gas transported from the circumferential direction through the turbulence generated by its own rotation. Accordingly, the substrate is provided with a central hole, and the first cover plate of the first radial gas-distributing disk and the second cover plate of the second radial gas-distributing disk are both provided with central through holes for introducing power.

[0054] Furthermore, a support shaft is provided which passes through the central hole and the central through hole, such as Figure 1 and Figure 2 The positive rotation shaft 11 shown in the figure is used to support the substrate 10.

[0055] A second driving mechanism is correspondingly provided for driving the support shaft to rotate.

[0056] exist Figure 1 and Figure 2In the illustrated structure, the upper end of the positive rotation shaft 11 used as a support shaft may be, for example, a quartz boat for accommodating the substrate 10 .

[0057] In addition, the outer surface of the quartz boat can have ribs to generate turbulence. For the purpose of generating turbulence, the ribs are not required to be very long, otherwise it will cause excessive disturbance to the process gas and fail to achieve a good process gas homogenization effect. The radial extension of the ribs is 1.5~3mm, and the ribs are similar to ridges.

[0058] Furthermore, the support shaft and the second radial gas homogenizing disk have opposite rotation directions, so that the driving forces for causing the process gas to rotate are opposite, thereby generating a counteracting effect, which is more beneficial for homogenizing the process gas.

[0059] exist Figure 1 and Figure 2 In the illustrated structure, the inverted gas-distributing disk 8 used as the second radial gas-distributing device is mounted on the base plate through a thrust bearing 6 and has a connector extending to the second side of the base plate. Its assembly method is similar to that of a tower crane bearing and is a relatively large thrust bearing.

[0060] Furthermore, the second side is a side opposite to the side where the second radial gas homogenizing device is located. Figure 1 and Figure 2 The underside is shown in .

[0061] Correspondingly, a gear ring 4 is mounted on the connecting head to drive the second radial air homogenizing device to rotate through a gear transmission mechanism.

[0062] exist Figure 1 and Figure 2 In the illustrated structure, the first drive mechanism and the second drive mechanism share a power machine, such as the motor 19 shown in the figure, the motor shaft of the motor 19 is connected to a power shaft 18 through a coupling, and the power shaft 18 is equipped with a driving sprocket 17 and a driving gear 15. Correspondingly, the forward shaft 11 is equipped with a driven sprocket 1, and the driven sprocket 1 and the driving sprocket 17 are connected by a transmission chain to form a chain transmission mechanism.

[0063] In the figure, the driving gear 15 meshes with the ring gear 4 to form a gear transmission mechanism.

[0064] If the power shaft rotates clockwise, the driving gear 15 and the driving sprocket 17 also rotate clockwise, and the ring gear 4 meshing with the driving gear 15 must rotate counterclockwise. The driven sprocket 1 also rotates clockwise under the drive of the driving sprocket 17. Under this condition, the second radial air-distributing disk rotates counterclockwise, and the positive shaft 11 rotates clockwise, and the two rotate in opposite directions.

[0065] exist Figure 1 and Figure 2In the illustrated structure, in order to realize the intervention of the power of the inverted gas-distributing disk 8, the cooling flange 5 needs to be made into a separate structure. The cooling flange 5 shown in the figure is a water-cooled flange, which includes: A water-cooled annular disk, the annular hole of which constitutes the seat hole of the thrust bearing 6; and The center disk is located in the annular hole to cooperate with the corresponding thrust bearing 6 from the inside. Obviously, the center disk has the center hole.

Claims

1. A gas homogenizing device, characterized in that: include: substrate; A first radial gas-distributing disk is a cylindrical cavity installed on the substrate, a first side wall of the first radial gas-distributing disk is provided with first gas-distributing holes, and the first radial gas-distributing disk is connected to an air inlet pipe; The second radial gas-distributing disk is a cylindrical cavity covering the first radial gas-distributing disk, and the second radial gas-distributing disk is mounted on the substrate through a rotating pair; the second side wall of the second radial gas-distributing disk is provided with second gas-distributing holes; as well as The first driving mechanism is installed on the base plate to drive the second radial gas uniforming disk to rotate.

2. The gas homogenizing device according to claim 1, characterized in that: The distribution form of the second air-distributing holes on the second radial air-distributing disk is a ring array of second air-distributing holes evenly arranged along the axial direction on the second radial air-distributing disk; A blade extending axially is disposed on one side of each second air-distributing hole row to assist in generating a centrifugal effect.

3. The gas homogenizing device according to claim 2, characterized in that: The blades form a vortex blade group through an annular array to adapt to the rotation direction of the second radial air distribution disk.

4. The gas homogenizing device according to claim 1, characterized in that: An axial gas-distributing disk fixed on the base plate is also covered outside the second radial gas-distributing disk; Correspondingly, the upper cover plate of the axial gas distribution disk is distributed with third gas distribution holes.

5. The gas homogenizing device according to claim 1, characterized in that: The substrate is provided with a central hole, and the first cover plate of the first radial gas-distributing disk and the second cover plate of the second radial gas-distributing disk are both provided with a central through hole; Providing a support shaft penetrating through the central hole and the central through hole for supporting the substrate; A second drive mechanism is provided for driving the support shaft to rotate.

6. The gas homogenizing device according to claim 5, characterized in that: The support shaft and the second radial air distribution disk have opposite directions of rotation.

7. The gas homogenizing device according to claim 5 or 6, characterized in that: The second radial gas homogenizing device is mounted on the base plate through a thrust bearing and has a connector extending to the second side of the base plate; The second side is a side opposite to the side where the second radial gas homogenizing device is located; Correspondingly, a gear ring is installed on the connecting head to drive the second radial air homogenizing device to rotate through a gear transmission mechanism.

8. The gas homogenizing device according to claim 7, characterized in that: The first driving mechanism and the second driving mechanism share a power machine; Correspondingly, the power machine receives power through a power shaft; Active drive components of the first drive mechanism and the second drive mechanism are mounted on the power shaft.

9. The gas homogenizing device according to claim 7, characterized in that: The base plate is a split water-cooling flange, which includes: a water-cooled annular disk, the annular hole of which constitutes the seat hole of the thrust bearing; and The center disk is located in the annular hole to cooperate with the corresponding thrust bearing from the inside.

10. A semiconductor process equipment, characterized in that: It comprises the gas homogenizing device as described in any one of claims 1 to 9.

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