Semiconductor device

Abstract

The invention provides semiconductor equipment. The semiconductor equipment comprises a cavity, a first heating piece, a second heating piece and an annular side heat insulation wall, the cavity comprises a cavity wall, an upper cover and a lower cover, and the cavity is used for accommodating a to-be-heated piece; the side heat insulation wall is fixed to the inner wall of the cavity wall and surrounds the first heating piece and the second heating piece. The first heating piece and the second heating piece are arranged in an insulated mode in the axial direction of the to-be-heated piece. The first heating piece comprises a first heating body arranged around the piece to be heated and a first heating electrode extending from the first heating body to the direction of the cavity wall, the second heating piece is provided with a second heating electrode extending to the direction of the cavity wall, and the side heat insulation wall is provided with a first via hole and a second via hole; the first heating electrode penetrates through the first via hole to enable the first heating piece to be supported on the side heat insulation wall, and the second heating electrode penetrates through the second via hole to enable the side heat insulation wall to support the second heating piece. According to the semiconductor device provided by the invention, the quality and the consistency of grown crystals (such as aluminum nitride crystals) can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Art

[0002] Aluminum nitride (AlN) is a direct bandgap semiconductor with a bandgap width of 6.2eV. It has broad application prospects in deep ultraviolet optoelectronic devices and high-frequency and high-power radio frequency devices. The realization of high-performance devices requires a high-quality aluminum nitride substrate as a basis.

[0003] In the prior art, physical vapor transport (PVT) can be used as a method for growing aluminum nitride crystals. An existing aluminum nitride semiconductor device includes a cavity, a crucible, a heat-insulating structure, and a heating structure. The crucible is arranged in the cavity to hold the raw materials required for the growth of aluminum nitride crystals. The heating structure is arranged around the crucible to heat the raw materials so that the temperature of the raw materials reaches a temperature suitable for the growth of aluminum nitride crystals. The heat-insulating structure is arranged around the heating structure.

[0004] However, the quality and consistency of aluminum nitride crystals grown by an existing aluminum nitride semiconductor device are relatively poor. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor device that can improve the quality and consistency of grown crystals (eg, aluminum nitride crystals).

[0006] To achieve the purpose of the present invention, a semiconductor device is provided, comprising: a cavity, a first heating element located in the cavity, a second heating element and an annular side heat insulation wall; wherein:

[0007] The cavity comprises a cavity wall, an upper cover and a lower cover, and the cavity is used to accommodate the heated component;

[0008] The side heat insulation wall is fixed to the inner wall of the cavity wall and is arranged around the first heating element and the second heating element;

[0009] The first heating element and the second heating element are insulated and arranged along the axial direction of the heated element;

[0010] The first heating element comprises a first heating body arranged around the element to be heated and a first heating electrode extending from the first heating body toward the cavity wall, the side heat insulating wall has a first through hole for the first heating electrode to pass through, and the first heating electrode passes through the first through hole, so that the first heating element is supported on the side heat insulating wall;

[0011] The second heating element has a second heating electrode extending toward the cavity wall, the side heat insulating wall has a second through hole for the second heating electrode to pass through, and the second heating electrode passes through the second through hole, so that the side heat insulating wall supports the second heating element.

[0012] Optionally, the side insulation wall comprises a first sub-insulation wall and a second sub-insulation wall; wherein:

[0013] The first sub-insulation wall is arranged around the first heating element, and the first through hole is located in the first sub-insulation wall;

[0014] The second sub-insulation wall is disposed around the second heating element, and the second through hole is located in the second sub-insulation wall.

[0015] Optionally, the first sub-insulation wall is provided with a first U-shaped groove, a first insulation plug is inserted into the first U-shaped groove, and the first insulation plug and the first U-shaped groove form the first through hole;

[0016] The second sub-insulation wall is provided with a second U-shaped groove, a second insulation plug is inserted into the second U-shaped groove, and the second insulation plug and the second U-shaped groove form the second through hole.

[0017] Optionally, the first sub-insulation wall has a first docking protrusion at one end opposite to the second sub-insulation wall, and the second sub-insulation wall has a second docking protrusion at one end opposite to the first sub-insulation wall. The first docking protrusion is annular and arranged along the circumference of the first sub-insulation wall, the second docking protrusion is annular and arranged along the circumference of the second sub-insulation wall, the first docking protrusion is arranged around the second docking protrusion, or the second docking protrusion is arranged around the first docking protrusion.

[0018] Optionally, the outer peripheral wall of the first sub-insulation wall is provided with a plurality of first overlapping protrusions at intervals, the cavity wall is provided with a plurality of first overlapping matching portions at intervals, and the plurality of first overlapping protrusions are overlapped on the plurality of first overlapping matching portions in a one-to-one correspondence;

[0019] The outer peripheral wall of the second sub-insulation wall is provided with a plurality of second overlapping protrusions at intervals, and the cavity wall is provided with a plurality of second overlapping matching parts at intervals, and the plurality of second overlapping protrusions are overlapped on the plurality of second overlapping matching parts in a one-to-one correspondence.

[0020] Optionally, the first sub-insulation wall and the second sub-insulation wall each include a plurality of tungsten plate layers and a plurality of molybdenum plate layers, each of the tungsten plate layers is in a ring shape, and the plurality of tungsten plate layers are arranged in sequence, each of the molybdenum plate layers is in a ring shape, and the plurality of molybdenum plate layers are surrounded by the plurality of tungsten plate layers, and the plurality of molybdenum plate layers are arranged in sequence.

[0021] Optionally, the semiconductor device also includes an upper insulation wall and a lower insulation wall located in the cavity, the upper insulation wall is fixed to the upper cover and is located on the top of the first sub-insulation wall and the second sub-insulation wall, and the lower insulation wall is fixed to the lower cover and is located on the bottom of the first sub-insulation wall and the second sub-insulation wall.

[0022] Optionally, an upper docking recess is provided at the bottom of the upper insulation wall, and a lower docking recess is provided at the top of the lower insulation wall. The upper docking recess is arranged along the circumference of the upper insulation wall for placing the top of the first sub-insulation wall and the second sub-insulation wall located above, and the lower docking recess is arranged along the circumference of the lower insulation wall for placing the bottom of the first sub-insulation wall and the second sub-insulation wall located below.

[0023] Optionally, a portion of the first heating electrode passing through the first via hole and a portion of the second heating electrode passing through the second via hole are both covered with an insulating member.

[0024] Optionally, the first heating body includes a plurality of first heating bodies, the number of the first heating electrodes is multiple, the first heating element further includes a first connecting body, the first connecting body is annular, the plurality of first heating bodies are arranged on the first connecting body at intervals along the circumference of the first connecting body, the plurality of first heating bodies are divided into a plurality of first heating groups, each of the first heating groups includes at least one first heating body, the plurality of first heating electrodes correspond to the plurality of first heating groups one by one, and each of the first heating electrodes is electrically connected to all the first heating bodies of the corresponding first heating group;

[0025] The second heating element includes a second connecting body and multiple second heating bodies, the number of second heating electrodes is multiple, the second connecting body is ring-shaped, and the multiple second heating bodies are arranged on the second connecting body at intervals along the circumference of the second connecting body. The multiple second heating bodies are divided into multiple second heating groups, each second heating group includes at least one second heating body, the multiple second heating electrodes correspond one-to-one to the multiple second heating groups, and each second heating electrode is electrically connected to all the second heating bodies of the corresponding second heating group.

[0026] Optionally, the axes of the circumference of the multiple first heating bodies are collinear with the axes of the circumference of the multiple second heating bodies, and the axes of the circumference of the multiple first heating bodies are collinear with the central axis of the part to be heated, and the inner diameter of the circumference of the multiple first heating bodies is larger than the outer diameter of the circumference of the multiple second heating bodies, or, the inner diameter of the circumference of the multiple second heating bodies is larger than the outer diameter of the circumference of the multiple first heating bodies.

[0027] Optionally, the first heating body includes a tungsten mesh, and the second heating body includes a tungsten mesh.

[0028] Optionally, the first heating electrode and the second heating electrode are arranged in a staggered manner.

[0029] Optionally, the semiconductor device also includes a first temperature measuring tube and a second temperature measuring tube, one end of the first temperature measuring tube is arranged corresponding to the top of the part to be heated, and the other end extends into one end of the second temperature measuring tube, and can move along the axial direction of the second temperature measuring tube, and can be overlapped in the second temperature measuring tube, the other end of the second temperature measuring tube passes through the upper cover and extends out of the cavity, the first temperature measuring tube and the second temperature measuring tube are used for the temperature measuring device to detect the temperature inside the part to be heated from the top of the part to be heated, and the tube wall of the first temperature measuring tube and the tube wall of the second temperature measuring tube can block the thermal radiation of the first heating part and the thermal radiation of the second heating part.

[0030] Optionally, a fourth channel is provided on the first sub-insulation wall and / or the second sub-insulation wall, and the fourth channel corresponds to the gap between two adjacent first heating bodies and / or the gap between two adjacent second heating bodies, and the fourth channel is used for a temperature measuring device to detect the temperature inside the part to be heated from the peripheral side of the part to be heated.

[0031] Optionally, the semiconductor device further comprises a driving component, the driving component being connected to the heated component and being used for:

[0032] The heated member is driven to be lifted and lowered relative to the first heating member and the second heating member, and the heated member is driven to rotate with the central axis of the heated member as the rotation axis.

[0033] Optionally, the driving assembly includes a driving source, a power output component, a adapter and a transmission component, the driving source is used to provide driving force, and the driving source, the power output component, the adapter, the transmission component and the component to be heated are connected in sequence.

[0034] Optionally, the adapter is columnar and has a plurality of first position-limiting recesses and a plurality of first position-limiting protrusions at one end, the plurality of first position-limiting recesses are arranged at intervals in the circumferential direction of the adapter, the plurality of first position-limiting protrusions are located one by one between two adjacent first position-limiting recesses, and are protruding relative to the first position-limiting recesses and recessed relative to the outer peripheral wall of the adapter;

[0035] The transmission member is columnar and has a first accommodating hole and a plurality of first mating protrusions at one end connected to the adapter. The aperture of the first accommodating hole is larger than the radial dimension of the adapter at the first limiting protrusion and smaller than the radial dimension of the adapter at the outer peripheral wall. The plurality of first mating protrusions are spaced apart at the end of the first accommodating hole in the circumferential direction of the first accommodating hole for one-to-one corresponding insertion with the plurality of first limiting recesses.

[0036] Optionally, the other end of the adapter has a plurality of second position-limiting recesses and a plurality of second position-limiting protrusions, the plurality of second position-limiting recesses are arranged at intervals in the circumferential direction of the adapter, the plurality of second position-limiting protrusions are located one by one between two adjacent second position-limiting recesses, and are protruding relative to the second position-limiting recesses, and are recessed relative to the outer peripheral wall of the adapter;

[0037] The power output member is columnar and has one end connected to the adapter, wherein the second accommodating hole and a plurality of second mating protrusions are provided. The diameter of the second accommodating hole is larger than the radial dimension of the adapter at the second limiting protrusion and smaller than the radial dimension of the adapter at the outer peripheral wall. The plurality of second mating protrusions are spaced apart at the end of the second accommodating hole in the circumferential direction of the second accommodating hole for one-to-one corresponding insertion with the plurality of second limiting recesses.

[0038] Optionally, the driving source is arranged outside the cavity and located at the bottom of the cavity, the transmission member is connected to the bottom of the member to be heated, and the power output member penetrates the lower cover and extends into the cavity.

[0039] Optionally, a first hole is passed through the interior of the transmission member, a second hole is passed through the interior of the power output member, and a third hole is passed through the interior of the adapter member. The transmission member, the adapter member and the power output member are coaxially arranged, and the first hole, the second hole and the third hole are coaxially arranged. The first hole, the second hole and the third hole are used for a temperature measuring device to detect the temperature inside the part to be heated from the bottom of the part to be heated, and the outer walls of the transmission member, the adapter member and the power output member can block the heat radiation of the first heating member and the heat radiation of the second heating member.

[0040] The present invention has the following beneficial effects:

[0041] The semiconductor device provided by the present invention is provided with a first heating element and a second heating element along the axial direction of the element to be heated. Since the first heating element includes a first heating body surrounding the element to be heated and a first heating electrode extending from the first heating body toward the cavity wall, and the second heating element has a second heating electrode extending toward the cavity wall, the first heating electrode and the second heating electrode can be electrically connected to different power supplies to enable the first heating electrode and the second heating electrode to load different heating powers to the first heating element and the second heating element, so that the heating power of the first heating element and the heating power of the second heating element can be controlled separately, so that the heating power of the first heating element and the heating power of the second heating element can be different, and since the first heating electrode passes through the first through hole so that the first heating element is supported on the side insulation wall, and the second heating electrode passes through the second through hole so that the side insulation wall supports the second heating element, the first heating element and the second heating element do not need to be fixed to the upper cover and the lower cover, so that the element to be heated can be connected to the driving component so that the element to be heated can rotate with the central axis of the element to be heated as the rotation axis, and can rotate relative to the first The heating element and the second heating element are raised and lowered, so that during the process of crystal growth, as the raw material in the element to be heated is continuously consumed and the crystal is continuously grown, the temperature of the raw material and the temperature of the crystal are continuously changing. The element to be heated can be rotated with the central axis of the element to be heated as the rotation axis to make the circumferential temperature of the raw material in the element to be heated and the circumferential temperature of the crystal uniform. The element to be heated can be raised and lowered relative to the first heating element and the second heating element to make the axial temperature of the raw material in the element to be heated and the axial temperature of the crystal always within a temperature range suitable for crystal growth, thereby improving the uniformity and stability of the temperature at which the crystal grows. Furthermore, when it is necessary to open the upper cover or the lower cover of the cavity to perform maintenance or add raw material to the element to be heated, there is no need to disassemble and assemble the first heating element and the second heating element, so that the relative position of the first heating element and the second heating element will not change due to the maintenance or addition of raw material to the element to be heated, thereby improving the consistency of the heating of the element to be heated by the first heating element and the second heating element, thereby improving the quality and consistency of the grown crystal (for example, aluminum nitride crystal). BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 A schematic diagram of the structure of a semiconductor device provided by an embodiment of the present invention;

[0043] Figure 2 A schematic diagram of the structure of a driving component of a semiconductor device provided by an embodiment of the present invention;

[0044] Figure 3 A schematic diagram of the structure of an adapter of a drive assembly provided in an embodiment of the present invention;

[0045] Figure 4A schematic diagram of the structure of the connection between the transmission member and the adapter member of the drive assembly provided in an embodiment of the present invention;

[0046] Figure 5 A schematic diagram of the structure of a first temperature measuring tube and a second temperature measuring tube of a semiconductor device provided in an embodiment of the present invention;

[0047] Figure 6 A schematic structural diagram of a second heating element of a semiconductor device provided by an embodiment of the present invention;

[0048] Figure 7 A schematic top view of the first heating element and the second heating element of the semiconductor device provided by an embodiment of the present invention;

[0049] Figure 8 A schematic structural diagram of a second sub-insulation wall and a second heating element of a semiconductor device provided by an embodiment of the present invention;

[0050] Fig. 9 A schematic structural diagram of a first sub-insulation wall and a second sub-insulation wall of a semiconductor device provided by an embodiment of the present invention;

[0051] Fig.10 A schematic structural diagram of a second sub-insulation wall provided in an embodiment of the present invention;

[0052] Fig.11 A schematic diagram of the structure of a second heat-insulating insert provided in an embodiment of the present invention;

[0053] Fig.12 A schematic diagram of the structure of the joint between the first sub-insulation wall and the second sub-insulation wall provided in an embodiment of the present invention;

[0054] Fig.13 A schematic diagram of the structure of a second sub-insulation wall and a lower insulation wall provided in an embodiment of the present invention;

[0055] Description of reference numerals:

[0056] 11-cavity wall; 12-upper cover; 13-lower cover; 14-first overlapped fitting portion; 15-second overlapped fitting portion; 2-part to be heated; 31-first heating part; 311-first heating electrode; 32-second heating part; 321-second connecting body; 322-second heating body; 323-second heating electrode; 324-insulating member; 42-power output member; 421-second channel; 43-adapter; 431-first limiting concave portion; 432-first limiting convex portion; 433-second limiting concave portion; 434-second limiting convex portion; 435-third channel ;44-transmission member;441-first matching protrusion;442-first channel;51-first temperature measuring tube;52-second temperature measuring tube;521-air vent;61-first sub-insulation wall;611-first docking protrusion;612-first overlapping protrusion;613-first insulation plug;62-second sub-insulation wall;621-second U-shaped groove;622-second insulation plug;623-second docking protrusion;624-second overlapping protrusion;63-upper insulation wall;64-lower insulation wall;71-electrode of the first power supply;72-electrode of the second power supply;8-raw materials. DETAILED DESCRIPTION

[0057] In order to enable those skilled in the art to better understand the technical solution of the present invention, the semiconductor device provided by the present invention is described in detail below with reference to the accompanying drawings.

[0058] like Figure 1 As shown, an embodiment of the present invention provides a semiconductor device, comprising a cavity, a first heating element 31, a second heating element 32 and an annular side heat insulation wall located in the cavity; wherein: the cavity comprises a cavity wall 11, an upper cover 12 and a lower cover 13, and the cavity is used to accommodate a heating element 2; the side heat insulation wall is fixed to the inner wall of the cavity wall 11 and is arranged around the first heating element 31 and the second heating element 32; the first heating element 31 and the second heating element 32 are insulated along the axial direction of the heating element 2; the first heating element 31 comprises a first heating element arranged around the heating element 2 The heat body and the first heating electrode 311 extending from the first heating body toward the cavity wall 11, the side insulation wall has a first through hole for the first heating electrode 311 to pass through, and the first heating electrode 311 passes through the first through hole, so that the first heating element 31 is supported on the side insulation wall; the second heating element 32 has a second heating electrode 323 extending toward the cavity wall 11, the side insulation wall has a second through hole for the second heating electrode 323 to pass through, and the second heating electrode 323 passes through the second through hole, so that the second heating element 32 is supported on the side insulation wall.

[0059] The semiconductor device provided by the embodiment of the present invention is provided with a first heating member 31 and a second heating member 32 along the axial direction of the heated member 2. Since the first heating member 31 includes a first heating body surrounding the heated member and a first heating electrode 311 extending from the first heating body toward the cavity wall 11, and the second heating member 32 has a second heating electrode 323 extending toward the cavity wall 11, the first heating electrode 311 and the second heating electrode 323 can be electrically connected to different power supplies to enable the first heating electrode 311 and the second heating electrode 323 to load different heating powers to the first heating member 31 and the second heating member 32. Therefore, the heating power of the first heating element 31 and the heating power of the second heating element 32 can be controlled separately, so that the heating power of the first heating element 31 and the heating power of the second heating element 32 can be different. In addition, since the first heating electrode 311 passes through the first through hole so that the first heating element 31 is supported on the side insulation wall, and the second heating electrode 323 passes through the second through hole so that the side insulation wall supports the second heating element 32, the first heating element 31 and the second heating element 32 do not need to be fixed to the upper cover 12 and the lower cover 13. Therefore, by connecting the heated element 2 to the driving component, the heated element 2 can be centered on the central axis of the heated element 2. The rotating axis rotates and can be raised and lowered relative to the first heating element 31 and the second heating element 32. In this way, during the crystal growth process, as the raw material 8 in the heated element 2 is continuously consumed and the crystal is continuously grown, the temperature of the raw material 8 and the temperature of the crystal are continuously changed. The heated element 2 can be rotated with the central axis of the heated element 2 as the rotating axis to make the circumferential temperature of the raw material 8 in the heated element 2 and the circumferential temperature of the crystal uniform. The heated element 2 can be raised and lowered relative to the first heating element 31 and the second heating element 32 to make the axial temperature of the raw material 8 in the heated element 2 and the axial temperature of the crystal always at an appropriate level. The temperature range of crystal growth can be combined, thereby improving the uniformity and stability of the temperature at which the crystal grows, and when it is necessary to open the upper cover 12 or the lower cover 13 of the cavity to maintain the heating element 2 or add the raw material 8, there is no need to disassemble the first heating element 31 and the second heating element 32, so that the relative positions of the first heating element 31 and the second heating element 32 will not change due to the maintenance or addition of the raw material 8 to the heating element 2, thereby improving the consistency of the heating of the heating element 2 by the first heating element 31 and the second heating element 32, and further improving the quality and consistency of the grown crystal (for example, aluminum nitride crystal).

[0060] Taking the physical vapor transport method for crystal growth as an example, optionally, the heated part 2 can be a crucible with a top cover, and the crucible is used to hold the raw material 8 required for crystal growth. Optionally, the first heating element 31 can correspond to the upper part of the axial direction of the heated part 2, the first heating body can be arranged around the upper part of the axial direction of the heated part 2, and the second heating element 32 can correspond to the lower part of the axial direction of the heated part 2, that is, the first heating element 31 can be located above the second heating element 32. In the initial stage of crystal growth, the heating power of the first heating element 31 can be controlled to be greater than the heating power of the second heating element 32, so that the temperature of the upper part of the raw material 8 in the heated part 2 is greater than the temperature of the lower part, so that the raw material 8 cannot move upward in the heated part 2 to the top of the heated part 2 to generate crystals after sublimation. When the temperature of the raw material 8 reaches a temperature range suitable for crystal growth, the heating power of the first heating element 31 can be controlled to be smaller than the heating power of the second heating element 32. It should be noted that at this time, the heating power of the first heating element 31 and the heating power of the second heating element 32 still need to be able to keep the temperature of the raw material 8 within a temperature range suitable for crystal growth. Thereafter, the sublimated raw material 8 can move upward in the heated element 2 to the top of the heated element 2 to generate crystals. As the crystal grows continuously, the raw material 8 is consumed continuously, and the temperature of the raw material 8 and the temperature of the crystal will gradually increase. Since the heating power of the first heating element 31 is less than the heating power of the second heating element 32 during the crystal growth process, the temperature of the raw material 8 in the heated element 2 and the temperature of the crystal in the circumferential direction can be made uniform by making the heated element 2 rotate with the central axis of the heated element 2 as the rotation axis, and the temperature of the raw material 8 in the heated element 2 and the temperature of the crystal in the axial direction can always be in a temperature range suitable for crystal growth by making the heated element 2 rise relative to the first heating element 31 and the second heating element 32, thereby improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal (for example, aluminum nitride crystal). After the crystal growth is completed, the heated element 2 can be driven to descend relative to the first heating element 31 and the second heating element 32 by means of a driving component to prepare for subsequent crystal growth.

[0061] In practical applications, by enabling the heating power of the first heating element 31 and the heating power of the second heating element 32 to be controlled separately, on the one hand, the heating power of the first heating element 31 can be controlled to be greater than the heating power of the second heating element 32 to meet the conditions in the initial stage of crystal growth, and the heating power of the first heating element 31 can be controlled to be less than the heating power of the second heating element 32 to meet the conditions for crystal growth. On the other hand, the axial temperature of the heating element 2 can be flexibly adjusted.

[0062] Optionally, the crystal may be an aluminum nitride crystal. Optionally, the raw material 8 may be an aluminum nitride raw material 8. When the raw material 8 and the crystal are the same, for example, the raw material 8 is an aluminum nitride raw material 8 and the crystal is an aluminum nitride crystal, homogeneous growth of the crystal can be achieved.

[0063] Optionally, the temperature range suitable for the growth of aluminum nitride crystals may be 2100°C-2400°C.

[0064] Optionally, the second heating element 32 may correspond to the lower 3 / 4 portion of the element to be heated 2 in the axial direction.

[0065] like Figure 1 , Figure 8 and Fig. 9 As shown, in one embodiment of the present invention, the side insulation wall may include a first sub-insulation wall 61 and a second sub-insulation wall 62; wherein: the first sub-insulation wall 61 is arranged around the first heating element 31, and the first via hole is located at the first sub-insulation wall 61; the second sub-insulation wall 62 is arranged around the second heating element 32, and the second via hole is located at the second sub-insulation wall 62.

[0066] By setting a first sub-insulation wall 61 around the first heating element 31, the first sub-insulation wall 61 can be used to reduce the heat loss from the first heating element 31 and the second heating element 32 to heat the element 2 to be heated. By setting a second sub-insulation wall 62 around the second heating element 32, the second sub-insulation wall 62 can be used to reduce the heat loss from the first heating element 31 and the second heating element 32 to heat the element 2 to be heated. On the one hand, the amplitude of the temperature change of the element 2 to be heated can be reduced, thereby improving the temperature stability of the element 2 to be heated, and further improving the quality of the grown crystal. On the other hand, the heating rate of the element 2 to be heated can be increased, thereby improving the process efficiency. The first via hole is located in the first sub-insulation wall 61, and the first heating electrode 311 passes through the first via hole, so that the first heating element 31 is supported on the first sub-insulation wall 61. The second via hole is located in the second sub-insulation wall 62, and the second heating electrode 323 passes through the second via hole, so that the second sub-insulation wall 62 supports the second heating element 32.

[0067] Optionally, the first sub-insulation wall 61 may be ring-shaped, and the second heating element 32 may be ring-shaped.

[0068] Optionally, the first sub-insulation wall 61 may be coaxially disposed with the first heating element 31 , and the second sub-insulation wall 62 may be coaxially disposed with the second heating element 32 .

[0069] like Figure 1 , Figure 8-Figure 11As shown, in one embodiment of the present invention, the first sub-insulation wall 61 may be provided with a first U-shaped groove, in which a first insulation plug 613 is inserted, and the first insulation plug 613 and the first U-shaped groove form a first through hole; the second sub-insulation wall 62 may be provided with a second U-shaped groove 621, in which a second insulation plug 622 is inserted, and the second insulation plug 622 and the second U-shaped groove 621 form a second through hole.

[0070] Specifically, the first heat-insulating plug 613 may have a groove, and the second heat-insulating plug 622 may have a groove. By plugging the first heat-insulating plug 613 into the first U-shaped groove, a first through hole may be formed through the groove of the first heat-insulating plug 613 and the first U-shaped groove, for the first heating electrode 311 to pass through. By plugging the second heat-insulating plug 622 into the second U-shaped groove 621, a second through hole may be formed through the groove of the second heat-insulating plug 622 and the second U-shaped groove 621, for the second heating electrode 323 to pass through. In addition, by plugging the first heat-insulating plug 613 into the first U-shaped groove, the first heat-insulating plug 613 may be used to fill and seal part of the first U-shaped groove to reduce the heat dissipated by the first U-shaped groove. By plugging the second heat-insulating plug 622 into the second U-shaped groove 621, the second heat-insulating plug 622 may be used to fill and seal part of the second U-shaped groove 621 to reduce the heat dissipated by the second U-shaped groove 621.

[0071] Optionally, there may be multiple first U-shaped grooves, multiple first thermal insulation plugs 613, multiple first heating electrodes 311, multiple first thermal insulation plugs 613 are plugged into the multiple first U-shaped grooves one by one to form multiple first vias, and multiple first heating electrodes 311 pass through the multiple first vias one by one; there may be multiple second U-shaped grooves 621, multiple second thermal insulation plugs 622, multiple second heating electrodes 323, multiple second thermal insulation plugs 622 are plugged into the multiple second U-shaped grooves 621 one by one to form multiple second vias, and multiple second heating electrodes 323 pass through the multiple second vias one by one.

[0072] like Figure 1 , Fig. 9 and Fig.12 As shown, in one embodiment of the present invention, the end of the first sub-insulation wall 61 opposite to the second sub-insulation wall 62 may have a first docking protrusion 611, and the end of the second sub-insulation wall 62 opposite to the first sub-insulation wall 61 may have a second docking protrusion 623, the first docking protrusion 611 is annular and arranged along the circumference of the first sub-insulation wall 61, the second docking protrusion 623 is annular and arranged along the circumference of the second sub-insulation wall 62, the first docking protrusion 611 surrounds the second docking protrusion 623, or the second docking protrusion 623 surrounds the first docking protrusion 611.

[0073] By making the first docking protrusion 611 surround the second docking protrusion 623, or the second docking protrusion 623 surround the first docking protrusion 611, a "Z"-shaped labyrinth gap can be formed at the docking point between the first sub-insulation wall 61 and the second sub-insulation wall 62, thereby reducing heat loss from the gap at the docking point between the first sub-insulation wall 61 and the second sub-insulation wall 62.

[0074] like Figure 8 and Fig. 9 As shown, in one embodiment of the present invention, the outer peripheral wall of the first sub-insulation wall 61 may be provided with a plurality of first overlapping protrusions 612 at intervals, and the cavity wall 11 may be provided with a plurality of first overlapping fitting portions 14 at intervals, and the plurality of first overlapping protrusions 612 are overlapped one-to-one on the plurality of first overlapping fitting portions 14; the outer peripheral wall of the second sub-insulation wall 62 may be provided with a plurality of second overlapping protrusions 624 at intervals, and the cavity wall 11 may be provided with a plurality of second overlapping fitting portions 15 at intervals, and the plurality of second overlapping protrusions 624 are overlapped one-to-one on the plurality of second overlapping fitting portions 15.

[0075] By overlapping multiple first overlapping protrusions 612 on multiple first overlapping fitting parts 14 in a one-to-one correspondence, the first sub-insulation wall 61 can be supported by means of the multiple first overlapping fitting parts 14 through the one-to-one support of the multiple first overlapping protrusions 612, so that the first sub-insulation wall 61 can be fixed in the cavity through the multiple first overlapping fitting parts 14; by overlapping multiple second overlapping protrusions 624 on multiple second overlapping fitting parts 15 in a one-to-one correspondence, the second sub-insulation wall 62 can be supported by means of the multiple second overlapping fitting parts 15 through the one-to-one support of the multiple second overlapping protrusions 624, so that the second sub-insulation wall 62 can be fixed in the cavity through the multiple second overlapping fitting parts 15.

[0076] like Figure 8-Figure 10 As shown, in one embodiment of the present invention, the first sub-insulation wall 61 and the second sub-insulation wall 62 may both include multiple tungsten plate layers and multiple molybdenum plate layers, each tungsten plate layer is annular, and multiple tungsten plate layers are arranged in sequence, each molybdenum plate layer is annular, and multiple molybdenum plate layers are surrounded by the multiple tungsten plate layers, and multiple molybdenum plate layers are arranged in sequence.

[0077] Such a design can reduce the weight and cost of the first sub-insulation wall 61 and the second sub-insulation wall 62 while ensuring that the layers of the first sub-insulation wall 61 and the second sub-insulation wall 62 are not melted by heat.

[0078] Optionally, the first sub-insulation wall 61 and the second sub-insulation wall 62 may also include a stainless steel layer, and the stainless steel layer may surround all the molybdenum plate layers. The stainless steel layer may provide sufficient structural strength for the first sub-insulation wall 61 and the second sub-insulation wall 62 to facilitate the arrangement of the first overlapping protrusion 612 and the second overlapping protrusion 624.

[0079] Optionally, the number of tungsten plate layers of the first sub-insulation wall 61 or the second sub-insulation wall 62 may be 8-10.

[0080] Optionally, the thickness of the tungsten plate layer may be 0.3 mm-1 mm.

[0081] Optionally, the distance between two adjacent tungsten plate layers may be 0.5 mm-1 mm.

[0082] Optionally, the number of molybdenum plate layers of the first sub-insulation wall 61 or the second sub-insulation wall 62 may be 4-6.

[0083] Optionally, the thickness of the tungsten plate layer may be 0.3 mm-1 mm.

[0084] Optionally, the thickness of the stainless steel layer may be 5 mm to 10 mm.

[0085] Optionally, the total number of tungsten plate layers, molybdenum plate layers, and stainless steel layers of the first sub-insulation wall 61 or the second sub-insulation wall 62 may be 13-17.

[0086] In one embodiment of the present invention, the first sub-insulation wall 61 and the second sub-insulation wall 62 may be coaxially arranged, and the axis of the first sub-insulation wall 61 may be colinear with the central axis of the heated component 2 .

[0087] That is to say, the first sub-insulation wall 61, the second sub-insulation wall 62 and the heated component 2 can be coaxially arranged to improve the uniformity of the first sub-insulation wall 61 and the second sub-insulation wall 62 in thermally insulating the heated component 2, thereby further improving the quality of the grown crystals.

[0088] like Figure 1 As shown, in one embodiment of the present invention, the semiconductor device may also include an upper insulation wall 63 and a lower insulation wall 64 located in the cavity, the upper insulation wall 63 is fixed to the upper cover 12, and is located on the top of the first sub-insulation wall 61 and the second sub-insulation wall 62, and the lower insulation wall 64 is fixed to the lower cover 13, and is located at the bottom of the first sub-insulation wall 61 and the second sub-insulation wall 62.

[0089] That is, the upper insulation wall 63 can be located at the top of the side insulation wall and fixedly connected to the upper cover 12, and the lower insulation wall 64 can be located at the top of the side insulation wall and fixedly connected to the lower cover 13. With the help of the upper insulation wall 63, the heat loss of the first heating element 31 and the second heating element 32 for heating the member to be heated 2 can be reduced from the top of the member to be heated 2, and with the help of the lower insulation wall 64, the heat loss of the first heating element 31 and the second heating element 32 for heating the member to be heated 2 can be reduced from the bottom of the member to be heated 2, so that the heat loss of the first heating element 31 and the second heating element 32 for heating the member to be heated 2 can be reduced from all around the member to be heated 2 through the first sub-insulation wall 61, the second sub-insulation wall 62, the upper insulation wall 63 and the lower insulation wall 64.

[0090] like Figure 1 and Fig.13 As shown, in one embodiment of the present invention, an upper docking recess is provided at the bottom of the upper insulation wall 63, and a lower docking recess is provided at the top of the lower insulation wall 64. The upper docking recess is provided along the circumference of the upper insulation wall 63 for placing the top of the upper one of the first sub-insulation wall 61 and the second sub-insulation wall 62, and the lower docking recess is provided along the circumference of the lower insulation wall 64 for placing the bottom of the lower one of the first sub-insulation wall 61 and the second sub-insulation wall 62.

[0091] For example, the first sub-insulation wall 61 is located above the second sub-insulation wall 62, and the upper docking recess is used for placing the top of the first sub-insulation wall 61, and the lower docking recess is used for placing the second sub-insulation wall 62. By placing the top of the first sub-insulation wall 61 in the upper docking recess, an "L"-shaped labyrinth gap can be formed at the joint of the first sub-insulation wall 61 and the upper insulation wall 63, thereby reducing the heat loss from the gap at the joint of the first sub-insulation wall 61 and the upper insulation wall 63, and by placing the bottom of the second sub-insulation wall 62 in the lower docking recess, an "L"-shaped labyrinth gap can be formed at the joint of the second sub-insulation wall 62 and the lower insulation wall 64, thereby reducing the heat loss from the gap at the joint of the second sub-insulation wall 62 and the lower insulation wall 64.

[0092] like Figure 8 As shown, in one embodiment of the present invention, a portion of the first heating electrode 311 passing through the first U-shaped groove and a portion of the second heating electrode 323 passing through the second U-shaped groove 621 may both be covered with an insulating member 324 .

[0093] By wrapping the insulating member 324 around the portion of the first heating electrode 311 that passes through the first U-shaped groove, it is possible to avoid direct contact between the first heating electrode 311 and the first sub-insulation wall 61 and a short circuit. By wrapping the insulating member 324 around the portion of the second heating electrode 323 that passes through the second U-shaped groove 621, it is possible to avoid direct contact between the second heating electrode 323 and the second sub-insulation wall 62 and a short circuit.

[0094] like Figure 1 , Figure 6 and Figure 7 As shown, in one embodiment of the present invention, the first heating body includes a plurality of first heating bodies, the number of first heating electrodes 311 is multiple, the first heating element 31 may also include a first connecting body, the first connecting body is annular, and the plurality of first heating bodies are arranged on the first connecting body at intervals along the circumference of the first connecting body, the plurality of first heating bodies are divided into a plurality of first heating groups, each first heating group includes at least one first heating body, the plurality of first heating electrodes 311 correspond to the plurality of first heating groups one by one, and each first heating electrode 311 is electrically connected to all the first heating bodies of the corresponding first heating group; The second heating element 32 includes a second connecting body 321 and multiple second heating bodies 322. The number of second heating electrodes 323 is multiple. The second connecting body 321 is ring-shaped. The multiple second heating bodies 322 are arranged on the second connecting body 321 at circumferential intervals along the second connecting body 321. The multiple second heating bodies 322 are divided into multiple second heating groups. Each second heating group includes at least one second heating body 322. The multiple second heating electrodes 323 correspond to the multiple second heating groups one by one. Each second heating electrode 323 is electrically connected to all the second heating bodies 322 of the corresponding second heating group.

[0095] In practical applications, the first heating element 31 may be electrically connected to the first power source through a plurality of first heating electrodes 311, and the second heating element 32 may be electrically connected to the second power source through a plurality of second heating electrodes 323. The first power source is used to provide the first heating power to the first heating element 31 through the plurality of first heating electrodes 311, and the second power source is used to provide the second heating power to the second heating element 32 through the plurality of second heating electrodes 323. In other words, the heating power of the first heating element 31 may be controlled by the first power source, and the heating power of the second heating element 32 may be controlled by the second power source, so that the heating power of the first heating element 31 and the heating power of the second heating element 32 can be controlled separately.

[0096] Specifically, the first power supply supplies power to the multiple first heating groups through the multiple first heating electrodes 311 in a one-to-one correspondence, so that all the first heating bodies in each first heating can heat the part to be heated 2, so that the multiple first heating bodies surrounding the part to be heated 2 can heat the part to be heated 2 from the periphery of the part to be heated 2, so that the first heating element 31 heats the part to be heated 2. The second power supply supplies power to the multiple second heating groups through the multiple second heating electrodes 323 in a one-to-one correspondence, so that all the second heating bodies 322 in each second heating can heat the part to be heated 2, so that the multiple second heating bodies 322 surrounding the part to be heated 2 can heat the part to be heated 2 from the periphery of the part to be heated 2, so that the second heating element 32 heats the part to be heated 2.

[0097] In practical applications, in the process of assembling the first sub-insulation wall 61, the second sub-insulation wall 62, the first heating element 31 and the second heating element 32 into the cavity, the plurality of second overlapping protrusions 624 can be overlapped one by one on the plurality of second overlapping matching portions 15 to assemble the second sub-insulation wall 62 into the cavity, and then the second connecting body 321 and the plurality of second heating bodies 322 are placed in the second sub-insulation wall 62, and the plurality of second heating electrodes 323 are passed through the plurality of second U-shaped grooves 621 one by one to assemble the second heating element 32 into the cavity. , and then insert the multiple second insulation plugs 622 into the multiple second U-shaped grooves 621 one by one, and then overlap the multiple first overlapping protrusions 612 on the multiple first overlapping matching parts 14 one by one, so as to assemble the first sub-insulation wall 61 in the cavity, and then place the first connector and the multiple first heating bodies in the first sub-insulation wall 61, and pass the multiple first heating electrodes 311 through the multiple first U-shaped grooves one by one, so as to assemble the first heating element 31 in the cavity, and then insert the multiple first insulation plugs 613 into the multiple first U-shaped grooves one by one. The order of disassembling the first sub-insulation wall 61, the second sub-insulation wall 62, the first heating element 31 and the second heating element 32 is opposite to the order of assembling the first sub-insulation wall 61, the second sub-insulation wall 62, the first heating element 31 and the second heating element 32.

[0098] Optionally, the number of first heating electrodes 311 and the number of first heating groups can both be three and correspond one to one, and the angle between two adjacent first heating electrodes 311 in the circumferential direction of the first connector can be 120°, so that the first heating element 31 can be heated by means of three-phase alternating current.

[0099] like Figure 6As shown, optionally, the number of second heating electrodes 323 and the number of second heating groups can both be three and correspond one to one, and the angle between two adjacent second heating electrodes 323 in the circumferential direction of the second connecting body 321 can be 120°, so that the second heating element 32 can be heated by means of three-phase alternating current.

[0100] In one embodiment of the present invention, the axes of the circumference of the multiple first heating bodies can be collinear with the axes of the circumference of the multiple second heating bodies 322, and the axes of the circumference of the multiple first heating bodies can be collinear with the central axis of the heated part 2, and the inner diameter of the circumference of the multiple first heating bodies is larger than the outer diameter of the circumference of the multiple second heating bodies 322, or the inner diameter of the circumference of the multiple second heating bodies 322 is larger than the outer diameter of the circumference of the multiple first heating bodies.

[0101] That is to say, the circumference of the plurality of first heating bodies, the circumference of the plurality of second heating bodies 322 and the member to be heated 2 can be coaxially arranged, so that the uniformity of the heating of the member to be heated 2 by the plurality of first heating bodies and the plurality of second heating bodies 322 can be improved, so that the quality of the grown crystal can be further improved. By making the inner diameter of the circumference of the plurality of first heating bodies larger than the outer diameter of the circumference of the plurality of second heating bodies 322, or the inner diameter of the circumference of the plurality of second heating bodies 322 larger than the outer diameter of the circumference of the plurality of first heating bodies, the possibility of the first heating member 31 and the second heating member 32 being short-circuited due to the mutual contact caused by the high temperature deformation of the first heating body and the second heating body 322 can be reduced.

[0102] Optionally, the inner diameter of the circumference of the plurality of second heating bodies 322 is greater than the outer diameter of the circumference of the plurality of first heating bodies.

[0103] Optionally, the inner diameter of the circumference of the multiple first heating bodies is 5mm-10mm larger than the outer diameter of the circumference of the multiple second heating bodies 322, or the inner diameter of the circumference of the multiple second heating bodies 322 is 5mm-10mm larger than the outer diameter of the circumference of the multiple first heating bodies.

[0104] In one embodiment of the present invention, the first heating body may include a tungsten mesh, and the second heating body 322 may include a tungsten mesh.

[0105] like Figure 7 As shown, in one embodiment of the present invention, the plurality of first heating electrodes 311 and the plurality of second heating electrodes 323 may be staggered.

[0106] like Figure 1 and Figure 5As shown, in one embodiment of the present invention, the semiconductor device may further include a first temperature measuring tube 51 and a second temperature measuring tube 52, one end of the first temperature measuring tube 51 is arranged corresponding to the top of the heating component 2, and the other end extends into one end of the second temperature measuring tube 52, and can move along the axial direction of the second temperature measuring tube 52, and can be overlapped in the second temperature measuring tube 52, the other end of the second temperature measuring tube 52 passes through the upper cover 12 and extends out of the cavity, the first temperature measuring tube 51 and the second temperature measuring tube 52 are used for the temperature measuring device to detect the temperature inside the heating component 2 from the top of the heating component 2, and the tube wall of the first temperature measuring tube 51 and the tube wall of the second temperature measuring tube 52 can block the thermal radiation of the first heating component 31 and the thermal radiation of the second heating component 32.

[0107] Specifically, the second temperature measuring tube 52 can be arranged through the upper cover 12, one end of the second temperature measuring tube 52 can be located in the cavity and extend toward the top of the part to be heated 2, and the other end can be located outside the cavity. The first temperature measuring tube 51 is located in the cavity, and one end is arranged corresponding to the top of the part to be heated 2, and the other end extends into one end of the second temperature measuring tube 52 and can move along the axial direction of the second temperature measuring tube 52. In this way, when the driving component drives the part to be heated 2 to rise, the top of the part to be heated 2 can contact the first temperature measuring tube 51, driving the first temperature measuring tube 51 to extend into the second temperature measuring tube 52 along the axial direction of the second temperature measuring tube 52. When the driving component drives the part to be heated 2 to descend, the top of the part to be heated 2 can be separated from the first temperature measuring tube 51, thereby avoiding the first temperature measuring tube 51 from interfering with the lifting and lowering of the part to be heated 2.

[0108] Such a design can detect the temperature inside the heated part 2 from the top of the heated part 2 through the first temperature measuring tube 51 and the second temperature measuring tube 52 by means of a temperature measuring device, so that during the crystal growth process, at least one of the height of the heated part 2, the heating power of the first heating part 31 and the heating power of the second heating part 32 can be adjusted according to the temperature inside the heated part 2 detected by the temperature measuring device, thereby improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal. In addition, since the tube wall of the first temperature measuring tube 51 and the tube wall of the second temperature measuring tube 52 can shield the thermal radiation of the first heating part 31 and the thermal radiation of the second heating part 32, the interference caused by the thermal radiation of the first heating part 31 and the thermal radiation of the second heating part 32 on the detection of the temperature measuring device can be reduced, thereby improving the accuracy of the temperature inside the heated part 2 detected by the temperature measuring device, thereby further improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal.

[0109] Optionally, the other end of the second temperature measuring tube 52 (ie, the end of the second temperature measuring tube 52 that passes through the upper cover 12 and is located outside the cavity) can be connected to the upper cover 12 by overlapping the upper cover 12 .

[0110] Optionally, the other end of the second temperature measuring tube 52 (i.e., the end of the second temperature measuring tube 52 that passes through the upper cover 12 and is located outside the cavity) may be provided with a second light-transmitting member, and the second light-transmitting member is used to seal the other end of the second temperature measuring tube 52 .

[0111] By sealing the other end of the second tube with the help of the second light-transmitting member, the heat dissipated from the cavity through the first temperature measuring tube 51 and the second temperature measuring tube 52 can be reduced, and the temperature measuring device can detect the temperature inside the heating element 2 through the second light-transmitting member.

[0112] Optionally, a vent 521 may be provided on the wall of the second temperature measuring tube 52, and the vent 521 is connected to the inside of the second temperature measuring tube 52 and the inside of the cavity respectively.

[0113] With the help of the air vent 521, the gas in the first temperature measuring tube 51 and the second temperature measuring tube 52 that expands due to the high temperature in the cavity can be discharged into the cavity, thereby preventing the first temperature measuring tube 51 and the second temperature measuring tube 52 from being damaged due to the heat expansion of the gas in the first temperature measuring tube 51 and the second temperature measuring tube 52.

[0114] In one embodiment of the present invention, the first temperature measuring tube 51 and the second temperature measuring tube 52 can be coaxially arranged, and the axis of the first temperature measuring tube 51 and the central axis of the heated component 2 can be colinear.

[0115] That is to say, the first temperature measuring tube 51, the second temperature measuring tube 52 and the part to be heated 2 can be coaxially arranged, so that the temperature inside the part to be heated 2 can be detected from the top center of the part to be heated 2 by means of the temperature measuring device through the first temperature measuring tube 51 and the second temperature measuring tube 52, thereby further improving the accuracy of the temperature inside the part to be heated 2 detected by the temperature measuring device, thereby further improving the uniformity and stability of the temperature at which the crystal grows, and thereby further improving the quality of the grown crystal.

[0116] In one embodiment of the present invention, a fourth channel may be provided on the first sub-insulation wall 61 and / or the second sub-insulation wall 62, and the fourth channel corresponds to the gap between two adjacent first heating bodies and / or the gap between two adjacent second heating bodies 322, and the fourth channel is used for the temperature measuring device to detect the temperature inside the heating element 2 from the peripheral side of the heating element 2.

[0117] Such a design can detect the temperature inside the heated component 2 from the peripheral side of the heated component 2 by means of a temperature measuring device through the fourth channel and the gap between the two adjacent first heating bodies and / or the gap between the two adjacent second heating bodies 322, so that during the crystal growth process, at least one of the height of the heated component 2, the heating power of the first heating component 31 and the heating power of the second heating component 32 can be adjusted according to the temperature inside the heated component 2 detected by the temperature measuring device, thereby improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal. In addition, since the first sub-insulation wall 61 and / or the second sub-insulation wall 62 can block the thermal radiation of the first heating component 31 and the thermal radiation of the second heating component 32, the interference caused by the thermal radiation of the first heating component 31 and the thermal radiation of the second heating component 32 on the detection of the temperature measuring device can be reduced, thereby improving the accuracy of the temperature inside the heated component 2 detected by the temperature measuring device, thereby further improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal.

[0118] The semiconductor device provided by the embodiment of the present invention can detect the temperature inside the heating member 2 from the top, bottom and circumference of the heating member 2 by means of a temperature measuring device, thereby improving the accuracy of the temperature inside the heating member 2, and then improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal. In addition, when the temperature measuring device detects the temperature inside the heating member 2, the semiconductor device provided by the embodiment of the present invention can reduce the interference of the thermal radiation of the first heating member 31 and the thermal radiation of the second heating member 32 on the detection of the temperature measuring device, thereby improving the accuracy of the temperature inside the heating member 2 detected by the temperature measuring device, and then further improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal.

[0119] In one embodiment of the present invention, the semiconductor device may also include a driving component, which is connected to the part to be heated 2 and is used to: drive the part to be heated 2 to rise and fall relative to the first heating part 31 and the second heating part 32, and drive the part to be heated 2 to rotate with the central axis of the part to be heated 2 as the rotation axis.

[0120] like Figure 1 and Figure 2 As shown, in one embodiment of the present invention, the driving assembly may include a driving source, a power output member 42, an adapter 43 and a transmission member 44, the driving source is used to provide driving force, and the driving source, the power output member 42, the adapter 43, the transmission member 44 and the heated member 2 are connected in sequence.

[0121] The driving force provided by the driving source can be transmitted to the part to be heated 2 via the power output member 42 , the adapter 43 , and the transmission member 44 in sequence, thereby driving the part to be heated 2 .

[0122] Optionally, the driving force provided by the driving source may include a lifting driving force and a rotation driving force. The lifting driving force may drive the heated member 2 to lift, and the rotation driving force may drive the heated member 2 to rotate.

[0123] Optionally, the driving member may be a magnetic fluid driving member, and the power output member 42 may be a magnetic fluid rotating shaft.

[0124] Optionally, the transmission member 44 may be a transmission shaft.

[0125] like Figure 3 and Figure 4 As shown, in one embodiment of the present invention, the adapter 43 can be columnar and have a plurality of first limiting recesses 431 and a plurality of first limiting protrusions 432 at one end, the plurality of first limiting recesses 431 are arranged at intervals in the circumferential direction of the adapter 43, and the plurality of first limiting protrusions 432 are located one-to-one between two adjacent first limiting recesses 431, and protrude relative to the first limiting recesses 431, and are recessed relative to the outer peripheral wall of the adapter 43; the transmission member 44 can be columnar and have a first accommodating hole and a plurality of first matching protrusions 441 at one end connected to the adapter 43, the aperture of the first accommodating hole is larger than the radial dimension of the adapter 43 at the first limiting protrusion 432, and smaller than the radial dimension of the adapter 43 at the outer peripheral wall, and the plurality of first matching protrusions 441 are arranged at intervals in the circumferential direction of the first accommodating hole at the end of the first accommodating hole, for one-to-one corresponding plugging with the plurality of first limiting recesses 431.

[0126] In the process of assembling the transmission member 44 and the adapter 43, the plurality of first matching protrusions 441 can be plugged into the plurality of first limiting recesses 431 one by one. Since the diameter of the first receiving hole is larger than the radial dimension of the adapter 43 at the first limiting protrusion 432 and smaller than the radial dimension of the adapter 43 at the outer peripheral wall, in the process of plugging the plurality of first matching protrusions 441 into the plurality of first limiting recesses 431 one by one, the plurality of first limiting protrusions 432 can enter the first receiving hole, and the plurality of first matching protrusions Part 441 can be abutted against the peripheral wall of the adapter 43 in the first limiting recess 431, so that it can make use of the first limiting protrusions 432 on both sides of the first limiting recess 431 to abut against the first matching protrusion 441 from both sides of the first matching protrusion 441 to limit the first matching protrusion 441, and can make use of the peripheral wall of the adapter 43 so that one end of the first matching protrusion 441 can abut against the first matching protrusion 441 to limit the first matching protrusion 441, thereby realizing the transmission of driving force from the adapter 43 to the transmission member 44.

[0127] The transmission member 44 and the adapter 43 are connected in this way because in practical applications, the material of the adapter 43 can be ceramic, and there is a thermal mismatch between ceramic and metal, and a threaded fastening connection cannot be achieved by threaded matching. In addition, ceramics have the characteristics of high temperature resistance, high strength and low thermal conductivity, which can reduce the heat dissipated by the heated part 2 through the transmission member 44.

[0128] Optionally, the length of the first limiting protrusion 432 in the circumferential direction of the adapter 43 may be 5 mm-10 mm.

[0129] like Figure 3 As shown, in one embodiment of the present invention, the other end of the adapter 43 may have a plurality of second limiting recesses 433 and a plurality of second limiting protrusions 434, the plurality of second limiting recesses 433 are arranged at intervals in the circumferential direction of the adapter 43, and the plurality of second limiting protrusions 434 are located one-to-one between two adjacent second limiting recesses 433, and protrude relative to the second limiting recesses 433, and are recessed relative to the outer peripheral wall of the adapter 43; the power output member 42 may be columnar and have a second accommodating hole and a plurality of second matching protrusions at one end connected to the adapter 43, the aperture of the second accommodating hole is larger than the radial dimension of the adapter 43 at the second limiting protrusion 434, and smaller than the radial dimension of the adapter 43 at the outer peripheral wall, and the plurality of second matching protrusions are arranged at intervals in the circumferential direction of the second accommodating hole at the end of the second accommodating hole, for one-to-one corresponding plugging with the plurality of second limiting recesses 433.

[0130] In the process of assembling the power output member 42 and the adapter 43, the plurality of second matching protrusions can be plugged into the plurality of second limiting recesses 433 one by one. Since the aperture of the second receiving hole is larger than the radial dimension of the adapter 43 at the second limiting protrusion 434 and smaller than the radial dimension of the adapter 43 at the outer peripheral wall, in the process of plugging the plurality of second matching protrusions into the plurality of second limiting recesses 433 one by one, the plurality of second limiting protrusions 434 can enter the first receiving hole, and Multiple second mating protrusions can be abutted against the peripheral wall of the adapter 43 in the second limiting recess 433, so that the second limiting protrusions 434 on both sides of the second limiting recess 433 can be used to abut against the second mating protrusions from both sides of the second mating protrusion to limit the second mating protrusion, and one end of the second mating protrusion can be abutted against the second mating protrusion by the peripheral wall of the adapter 43 to limit the second mating protrusion, thereby realizing the transmission of driving force from the power output member 42 to the adapter 43.

[0131] The power output component 42 and the adapter 43 are connected in this way because in actual applications, the material of the adapter 43 can be ceramic, and there is a thermal mismatch between ceramic and metal, and a threaded fastening connection cannot be achieved by threaded matching. In addition, ceramics have the characteristics of high temperature resistance, high strength and low thermal conductivity, which can reduce the heat transferred from the heated component 2 to the power output component 42 through the adapter 43, thereby reducing the possibility of mechanical damage to the power output component 42 due to high temperature.

[0132] Optionally, the length of the second limiting protrusion 434 in the circumferential direction of the adapter 43 may be 5 mm-10 mm.

[0133] like Figure 1 and Figure 2 As shown, in one embodiment of the present invention, the driving source can be arranged outside the cavity and located at the bottom of the cavity, the transmission member 44 can be connected to the bottom of the heated member 2, and the power output member 42 can penetrate the lower cover 13 and extend into the cavity.

[0134] Specifically, the transmission member 44 can be located in the cavity and connected to the bottom of the heated member 2 and extend toward the bottom of the cavity. The adapter 43 is connected to the bottom end of the transmission member 44 and is located in the cavity. The power output member 42 passes through the lower cover 13 and extends into the cavity, and is connected to the adapter 43 located in the cavity.

[0135] like Figure 1-Figure 3 As shown, in one embodiment of the present invention, a first hole 442 may be passed through the interior of the transmission member 44, a second hole 421 may be passed through the interior of the power output member 42, and a third hole 435 may be passed through the interior of the adapter 43. The transmission member 44, the adapter 43 and the power output member 42 may be coaxially arranged, and the first hole 442, the second hole 421 and the third hole 435 may be coaxially arranged. The first hole 442, the second hole 421 and the third hole 435 are used for the temperature measuring device to detect the temperature inside the heating member 2 from the bottom of the heating member 2, and the outer walls of the transmission member 44, the adapter 43 and the power output member 42 can block the heat radiation of the first heating member 31 and the heat radiation of the second heating member 32.

[0136] Such a design can detect the temperature inside the heated part 2 from the bottom of the heated part 2 through the first hole 442, the second hole 421 and the third hole 435 by means of the temperature measuring device, so that during the crystal growth process, at least one of the height of the heated part 2, the heating power of the first heating part 31 and the heating power of the second heating part 32 can be adjusted according to the temperature inside the heated part 2 detected by the temperature measuring device, thereby improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal. In addition, since the outer walls of the transmission member 44, the adapter 43 and the power output member 42 can shield the thermal radiation of the first heating member 31 and the thermal radiation of the second heating member 32, the interference caused by the thermal radiation of the first heating member 31 and the thermal radiation of the second heating member 32 on the detection of the temperature measuring device can be reduced, thereby improving the accuracy of the temperature inside the heated part 2 detected by the temperature measuring device, thereby further improving the uniformity and stability of the temperature at which the crystal grows, and further improving the quality of the grown crystal.

[0137] Optionally, a first light-transmitting member may be provided at one end of the power output member 42 away from the adapter 43 , and the first light-transmitting member is used to seal the second channel 421 .

[0138] By sealing the second channel 421 with the help of the first light-transmitting member, the heat dissipated from the cavity through the transmission member 44, the adapter 43 and the power output member 42 can be reduced, and the temperature measuring device can detect the temperature inside the heating member 2 through the first light-transmitting member.

[0139] Optionally, the temperature measuring device may include an infrared thermometer.

[0140] In one embodiment of the present invention, the axis of the first hole 442 and the central axis of the heated element 2 may be colinear.

[0141] That is to say, the first channel 442 can be coaxially arranged with the part to be heated 2, so that the first channel 442, the second channel 421 and the third channel 435 can all be coaxially arranged with the part to be heated 2, so that the temperature inside the part to be heated 2 can be detected from the bottom center of the part to be heated 2 by means of the temperature measuring device through the first channel 442, the second channel 421 and the third channel 435, and then the accuracy of the temperature inside the part to be heated 2 detected by the temperature measuring device can be further improved, and then the uniformity and stability of the temperature at which the crystal grows can be further improved, and then the quality of the grown crystal can be further improved.

[0142] like Figure 7As shown, in one embodiment of the present invention, the electrode 71 of the first power supply can penetrate the cavity wall 11 and extend into the cavity, the first heating electrode 311 extends radially along the cavity, and is electrically connected to the electrode 71 of the first power supply; the electrode 72 of the second power supply can penetrate the cavity wall 11 and extend into the cavity, the second heating electrode 323 extends radially along the cavity, and is electrically connected to the electrode 72 of the second power supply.

[0143] Optionally, the first heating electrode 311 and the electrode 71 of the first power source may be connected by a screw, and the second heating electrode 323 and the electrode 72 of the second power source may be connected by a screw.

[0144] like Figure 1 , Figure 2 and Figure 5 As shown, optionally, the upper insulation wall 63 may be provided with a through hole for the second temperature measuring tube 52 to pass through, and the lower insulation wall 64 may be provided with a through hole for the transmission member 44 to pass through.

[0145] Optionally, the diameter of the through hole of the upper heat insulation wall 63 and / or the through hole of the lower heat insulation wall 64 may be 20 mm-50 mm.

[0146] In summary, the semiconductor device provided by the embodiments of the present invention can improve the quality and consistency of the grown crystal (eg, aluminum nitride crystal).

[0147] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor device, characterized in that: include: A cavity, a first heating element located in the cavity, a second heating element and an annular side insulation wall; wherein: The cavity comprises a cavity wall, an upper cover and a lower cover, and the cavity is used to accommodate the heated component; The side heat insulation wall is fixed to the inner wall of the cavity wall and is arranged around the first heating element and the second heating element; The first heating element and the second heating element are insulated and arranged along the axial direction of the heated element; The first heating element comprises a first heating body arranged around the element to be heated and a first heating electrode extending from the first heating body toward the cavity wall, the side heat insulating wall has a first through hole for the first heating electrode to pass through, and the first heating electrode passes through the first through hole, so that the first heating element is supported on the side heat insulating wall; The second heating element has a second heating electrode extending toward the cavity wall, the side heat insulating wall has a second through hole for the second heating electrode to pass through, and the second heating electrode passes through the second through hole, so that the side heat insulating wall supports the second heating element.

2. The semiconductor device according to claim 1, wherein: The side insulation wall comprises a first sub-insulation wall and a second sub-insulation wall; wherein: The first sub-insulation wall is arranged around the first heating element, and the first through hole is located in the first sub-insulation wall; The second sub-insulation wall is disposed around the second heating element, and the second through hole is located in the second sub-insulation wall.

3. The semiconductor device according to claim 2, wherein: The first sub-insulation wall is provided with a first U-shaped groove, a first insulation plug is inserted into the first U-shaped groove, and the first insulation plug and the first U-shaped groove form the first through hole; The second sub-insulation wall is provided with a second U-shaped groove, a second insulation plug is inserted into the second U-shaped groove, and the second insulation plug and the second U-shaped groove form the second through hole.

4. The semiconductor device according to claim 2, wherein: The first sub-insulation wall has a first docking protrusion at one end opposite to the second sub-insulation wall, and the second sub-insulation wall has a second docking protrusion at one end opposite to the first sub-insulation wall. The first docking protrusion is annular and arranged along the circumference of the first sub-insulation wall, the second docking protrusion is annular and arranged along the circumference of the second sub-insulation wall, the first docking protrusion is arranged around the second docking protrusion, or the second docking protrusion is arranged around the first docking protrusion.

5. The semiconductor device according to claim 2, wherein: The outer peripheral wall of the first sub-insulation wall is provided with a plurality of first overlapping protrusions at intervals, and the cavity wall is provided with a plurality of first overlapping matching portions at intervals, and the plurality of first overlapping protrusions are overlapped on the plurality of first overlapping matching portions in a one-to-one correspondence; The outer peripheral wall of the second sub-insulation wall is provided with a plurality of second overlapping protrusions at intervals, and the cavity wall is provided with a plurality of second overlapping matching parts at intervals, and the plurality of second overlapping protrusions are overlapped on the plurality of second overlapping matching parts in a one-to-one correspondence.

6. The semiconductor device according to claim 2, wherein: The first sub-insulation wall and the second sub-insulation wall each include a plurality of tungsten plate layers and a plurality of molybdenum plate layers, each of the tungsten plate layers is in a ring shape, and the plurality of tungsten plate layers are arranged in a surrounding manner in sequence, each of the molybdenum plate layers is in a ring shape, and the plurality of molybdenum plate layers are surrounded by the plurality of tungsten plate layers, and the plurality of molybdenum plate layers are arranged in a surrounding manner in sequence.

7. The semiconductor device according to claim 2, wherein: The semiconductor device also includes an upper insulation wall and a lower insulation wall located in the cavity, the upper insulation wall is fixed to the upper cover and is located on the top of the first sub-insulation wall and the second sub-insulation wall, and the lower insulation wall is fixed to the lower cover and is located on the bottom of the first sub-insulation wall and the second sub-insulation wall.

8. The semiconductor device according to claim 7, wherein: An upper docking recess is provided at the bottom of the upper insulation wall, and a lower docking recess is provided at the top of the lower insulation wall. The upper docking recess is provided along the circumference of the upper insulation wall for placing the top of the first sub-insulation wall and the second sub-insulation wall located above, and the lower docking recess is provided along the circumference of the lower insulation wall for placing the bottom of the first sub-insulation wall and the second sub-insulation wall located below.

9. The semiconductor device according to claim 1, wherein: A portion of the first heating electrode passing through the first via hole and a portion of the second heating electrode passing through the second via hole are both covered with an insulating member.

10. The semiconductor device according to claim 2, wherein: The first heating body includes a plurality of first heating bodies, the number of the first heating electrodes is multiple, the first heating element further includes a first connecting body, the first connecting body is annular, the plurality of first heating bodies are arranged on the first connecting body at intervals along the circumference of the first connecting body, the plurality of first heating bodies are divided into a plurality of first heating groups, each of the first heating groups includes at least one first heating body, the plurality of first heating electrodes correspond to the plurality of first heating groups one by one, and each of the first heating electrodes is electrically connected to all the first heating bodies of the corresponding first heating group; The second heating element includes a second connecting body and multiple second heating bodies, the number of second heating electrodes is multiple, the second connecting body is ring-shaped, and the multiple second heating bodies are arranged on the second connecting body at intervals along the circumference of the second connecting body. The multiple second heating bodies are divided into multiple second heating groups, each second heating group includes at least one second heating body, the multiple second heating electrodes correspond one-to-one to the multiple second heating groups, and each second heating electrode is electrically connected to all the second heating bodies of the corresponding second heating group.

11. The semiconductor device according to claim 10, wherein: The axes of the circumference of the multiple first heating bodies are collinear with the axes of the circumference of the multiple second heating bodies, and the axes of the circumference of the multiple first heating bodies are collinear with the central axis of the part to be heated, and the inner diameter of the circumference of the multiple first heating bodies is larger than the outer diameter of the circumference of the multiple second heating bodies, or the inner diameter of the circumference of the multiple second heating bodies is larger than the outer diameter of the circumference of the multiple first heating bodies.

12. The semiconductor device according to claim 10, wherein: The first heating body includes a tungsten mesh, and the second heating body includes a tungsten mesh.

13. The semiconductor device according to claim 1, wherein: The first heating electrode and the second heating electrode are arranged in a staggered manner.

14. The semiconductor device according to claim 1, wherein: The semiconductor device also includes a first temperature measuring tube and a second temperature measuring tube. One end of the first temperature measuring tube is arranged corresponding to the top of the part to be heated, and the other end extends into one end of the second temperature measuring tube and can move along the axial direction of the second temperature measuring tube and can be overlapped in the second temperature measuring tube. The other end of the second temperature measuring tube passes through the upper cover and extends out of the cavity. The first temperature measuring tube and the second temperature measuring tube are used for the temperature measuring device to detect the temperature inside the part to be heated from the top of the part to be heated. The tube wall of the first temperature measuring tube and the tube wall of the second temperature measuring tube can block the thermal radiation of the first heating part and the thermal radiation of the second heating part.

15. The semiconductor device according to claim 10, wherein: A fourth channel is provided on the first sub-insulation wall and / or the second sub-insulation wall, and the fourth channel corresponds to the gap between two adjacent first heating bodies and / or the gap between two adjacent second heating bodies. The fourth channel is used for a temperature measuring device to detect the temperature inside the part to be heated from the peripheral side of the part to be heated.

16. The semiconductor device according to claim 1, wherein: The semiconductor device further comprises a driving component, which is connected to the heated component and is used for: The heated member is driven to be lifted and lowered relative to the first heating member and the second heating member, and the heated member is driven to rotate with the central axis of the heated member as the rotation axis.

17. The semiconductor device according to claim 16, wherein: The driving assembly includes a driving source, a power output member, a conversion member and a transmission member, wherein the driving source is used to provide driving force, and the driving source, the power output member, the conversion member, the transmission member and the member to be heated are connected in sequence.

18. The semiconductor device according to claim 17, wherein: The adapter is columnar and has a plurality of first position-limiting recesses and a plurality of first position-limiting protrusions at one end. The plurality of first position-limiting recesses are arranged at intervals in the circumferential direction of the adapter. The plurality of first position-limiting protrusions are located between two adjacent first position-limiting recesses in a one-to-one correspondence, and are protruding relative to the first position-limiting recesses and recessed relative to the outer peripheral wall of the adapter. The transmission member is columnar and has a first accommodating hole and a plurality of first mating protrusions at one end connected to the adapter. The aperture of the first accommodating hole is larger than the radial dimension of the adapter at the first limiting protrusion and smaller than the radial dimension of the adapter at the outer peripheral wall. The plurality of first mating protrusions are spaced apart at the end of the first accommodating hole in the circumferential direction of the first accommodating hole for one-to-one corresponding insertion with the plurality of first limiting recesses.

19. The semiconductor device according to claim 18, characterized in that The other end of the adapter has a plurality of second position-limiting recesses and a plurality of second position-limiting protrusions, the plurality of second position-limiting recesses are arranged at intervals in the circumferential direction of the adapter, the plurality of second position-limiting protrusions are located one by one between two adjacent second position-limiting recesses, and are protruding relative to the second position-limiting recesses, and are recessed relative to the outer peripheral wall of the adapter; The power output member is columnar and has one end connected to the adapter, wherein the second accommodating hole and a plurality of second mating protrusions are provided. The diameter of the second accommodating hole is larger than the radial dimension of the adapter at the second limiting protrusion and smaller than the radial dimension of the adapter at the outer peripheral wall. The plurality of second mating protrusions are spaced apart at the end of the second accommodating hole in the circumferential direction of the second accommodating hole for one-to-one corresponding insertion with the plurality of second limiting recesses.

20. The semiconductor device according to claim 17, wherein: The driving source is arranged outside the cavity and located at the bottom of the cavity, the transmission member is connected to the bottom of the member to be heated, and the power output member penetrates the lower cover and extends into the cavity.

21. The semiconductor device according to claim 17, wherein: A first hole is passed through the interior of the transmission member, a second hole is passed through the interior of the power output member, and a third hole is passed through the interior of the adapter member. The transmission member, the adapter member and the power output member are coaxially arranged, and the first hole, the second hole and the third hole are coaxially arranged. The first hole, the second hole and the third hole are used for a temperature measuring device to detect the temperature inside the part to be heated from the bottom of the part to be heated, and the outer walls of the transmission member, the adapter member and the power output member can block the heat radiation of the first heating member and the heat radiation of the second heating member.

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