Method for connecting two connection partners

Abstract

A method for connecting two connection partners comprises: moving a second connection partner towards a first connection partner and simultaneously heating a first portion of the second connection partner, thereby softening the first portion; and placing the second connection partner on the first connection partner such that the softened first portion thereof directly contacts the first connection partner.

Description

Technical Field

[0001] The present disclosure relates to a method for connecting two connection partners, in particular a method for connecting two elements of a power semiconductor module arrangement to one another. Background Art

[0002] The power semiconductor module device generally includes at least one semiconductor substrate arranged in a housing. A semiconductor device including a plurality of controllable semiconductor elements (e.g., two IGBTs in a half-bridge configuration) or uncontrollable semiconductor elements (e.g., arranged diodes) is arranged on each of the at least one substrate. Each substrate generally includes a substrate layer (e.g., a ceramic layer), a first metallization layer deposited on a first side of the substrate layer, and a second metallization layer deposited on a second side of the substrate layer. The controllable semiconductor elements are mounted on, for example, the first metallization layer. The second metallization layer can optionally be attached to a substrate.

[0003] The semiconductor substrate and the components mounted thereon are usually electrically coupled to the outside of the housing through a terminal element. Such a terminal element is mechanically and electrically coupled to the substrate or to one or more of the components mounted on the substrate through a first end, and extends from there through the housing to the outside of the housing. The terminal element and other components of the power semiconductor module device are usually coupled to the substrate or other components of the power semiconductor module device by means of welding, sintering or welding technology. The resulting connection should be stable, and the method for forming the connection should be fast, reliable, cost-effective and can be implemented in a space-saving manner.

[0004] What is needed is a method that allows a reliable connection to be made between two connection partners in a quick, reliable, cost-effective, and space-saving manner. Summary of the invention

[0005] A method for connecting two connecting partners includes: moving a second connecting partner toward a first connecting partner and simultaneously heating a first portion of the second connecting partner to soften the first portion, and placing the second connecting partner on the first connecting partner so that its softened first portion directly contacts the first connecting partner.

[0006] Another method for connecting two connection partners includes: moving a second connection partner toward a first connection partner, and placing the second connection partner on the first connection partner, wherein a portion of the first connection partner to be connected to the second connection partner is coupled to a first terminal of a power supply, and at least a first portion of the second connection partner to be connected to the first connection partner is coupled to a second terminal of the power supply, the first terminal of the power supply is a positive terminal, and the second terminal of the power supply is a negative terminal, or vice versa, and the power supply is configured to provide a current greater than a threshold current or a voltage greater than a threshold voltage, so that when the distance between the first portion of the second connection partner and the portion of the first connection partner to be connected to the second connection partner is reduced to below the threshold distance, a flashover occurs between the first portion of the second connection partner and the portion of the first connection partner to be connected to the second connection partner, thereby softening or melting the first portion of the second connection partner and the portion of the first connection partner to be connected to the second connection partner.

[0007] The present invention can be better understood with reference to the following drawings and descriptions. The components in the drawings are not necessarily drawn to scale, but emphasis is placed on illustrating the principles of the present invention. In addition, in the drawings, the same reference numerals represent corresponding parts in different views. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a cross-sectional view of a power semiconductor module device.

[0009] Figure 2A-2C A method for forming a connection between two connection partners according to an embodiment of the present disclosure is schematically illustrated.

[0010] Figures 3A-3C A method for forming a connection between two connection partners according to a further embodiment of the present disclosure is schematically illustrated.

[0011] Figures 4A-4C A method for forming a connection between two connection partners according to a further embodiment of the present disclosure is schematically illustrated.

[0012] Figures 5A-5C A method for forming a connection between two connection partners according to a further embodiment of the present disclosure is schematically illustrated.

[0013] Figures 6A-6C A method for forming a connection between two connection partners according to a further embodiment of the present disclosure is schematically illustrated.

[0014] Fig. 7A and Figure 7B A method for forming a plurality of connections between a first connection partner and a second, different connection partner according to an embodiment of the present disclosure is schematically illustrated.

[0015] Figures 8A-8C Different first connection partners and second connection partners according to embodiments of the present disclosure are schematically illustrated.

[0016] Figures 9A-9F Different termination elements for a power semiconductor module arrangement according to embodiments of the present disclosure are schematically illustrated.

[0017] Fig.10 A method for forming a connection between two connection partners according to an embodiment of the present disclosure is schematically illustrated. DETAILED DESCRIPTION

[0018] In the following detailed description, reference is made to the accompanying drawings. The accompanying drawings show specific examples in which the present invention can be practiced. It should be understood that, unless otherwise specifically stated, the features and principles described with respect to the various examples can be combined with each other. In the specification and in the claims, naming certain elements as "first element", "second element", "third element", etc. should not be understood as enumerable. On the contrary, such names are only used to address different "elements". That is, for example, the presence of a "third element" does not require the presence of a "first element" and a "second element". As described herein, a wire or electrical connection can be a single conductive element, or include at least two separate conductive elements connected in series and / or in parallel. The wire and electrical connection can include metal and / or semiconductor material, and can be permanently conductive (i.e., non-switchable). As described herein, a semiconductor body can be made of (doped) semiconductor material, and can be a semiconductor chip or included in a semiconductor chip. The semiconductor body has an electrical connection pad and includes at least one semiconductor element having an electrode.

[0019] refer to Figure 1 , a cross-sectional view of a power semiconductor module device 100 is shown. The power semiconductor module device 100 comprises a housing 7 and a semiconductor substrate 10. The semiconductor substrate 10 comprises a dielectric insulating layer 11, a (structured) first metallization layer 111 attached to the dielectric insulating layer 11, and a (structured) second metallization layer 112 attached to the dielectric insulating layer 11. The dielectric insulating layer 11 is arranged between the first metallization layer 111 and the second metallization layer 112.

[0020] Each of the first metallization layer 111 and the second metallization layer 112 may be composed of or include one of the following materials: copper; copper alloy; aluminum; aluminum alloy; any other metal or alloy that remains solid during operation of the power semiconductor module device. The semiconductor substrate 10 may be a ceramic substrate, i.e., a substrate in which the dielectric insulating layer 11 is a ceramic (e.g., a thin ceramic layer). The ceramic may be composed of or include one of the following materials: aluminum oxide; aluminum nitride; zirconium oxide; silicon nitride; boron nitride; or any other dielectric ceramic. For example, the dielectric insulating layer 11 may be composed of or include one of the following materials: Al2O3, AlN, SiC, BeO, or Si3N4. For example, the substrate 10 may be, for example, a direct copper bonding (DCB) substrate, a direct aluminum bonding (DAB) substrate, or an active metal brazing (AMB) substrate. In addition, the substrate 10 may be an insulated metal substrate (IMS). The insulated metal substrate typically includes a dielectric insulating layer 11, which includes a (filled) material, such as an epoxy resin or a polyimide. The material of the dielectric insulating layer 11 can be filled with, for example, ceramic particles. Such particles can include, for example, SiO2, Al2O3, AlN or BN, and can have a diameter between about 1 μm and about 50 μm. The substrate 10 can also be a conventional printed circuit board (PCB) with a non-ceramic dielectric insulating layer 11. For example, the non-ceramic dielectric insulating layer 11 can consist of or include a cured resin.

[0021] The semiconductor substrate 10 is arranged in the housing 7. Figure 1 In the example shown, the semiconductor substrate 10 forms the grounding surface of the housing 7, while the housing 7 itself includes only side walls and a cover. However, this is only an example. The housing 7 may also include a grounding surface, and the semiconductor substrate 10 is arranged inside the housing 7. According to another example, the semiconductor substrate 10 may be mounted on a substrate (not shown). In some power semiconductor module devices 100, more than one semiconductor substrate 10 is arranged on a single substrate. For example, the substrate may form the grounding surface of the housing 7. The top of the housing 7 may be a separate cover or lid that can be removed from the side walls, or may be formed integrally with at least the side walls of the housing 7. In the latter case, the top and at least the side walls of the housing 7 may be formed as a single piece so that the top cannot be removed from the side walls without destroying the housing.

[0022] One or more semiconductor bodies 20 may be arranged on the semiconductor substrate 10. Each semiconductor body 20 arranged on the semiconductor substrate 10 may include a diode, an IGBT (insulated gate bipolar transistor), a MOSFET (metal oxide semiconductor field effect transistor), a JFET (junction field effect transistor), a HEMT (high electron mobility transistor), or any other suitable controllable or uncontrollable semiconductor element.

[0023] One or more semiconductor bodies 20 may form a semiconductor device on the semiconductor substrate 10. Figure 1 In FIG. 2 , only two semiconductor bodies 20 are shown by way of example. Figure 1 The second metallization layer 112 of the semiconductor substrate 10 is a continuous layer. Figure 1 In the example shown, the first metallization layer 111 is a structured layer. "Structured layer" means that the first metallization layer 111 is not a continuous layer, but includes recesses between different parts of the layer. Such recesses are Figure 1 . In this example, the first metallization layer 111 includes four different parts. Different semiconductor bodies 20 can be mounted to the same or different parts of the first metallization layer 111. Different parts of the first metallization layer may not have electrical connections, or may be electrically connected to one or more other parts using, for example, bonding wires 3. For example, to name just a few examples, the electrical connection 3 may also include a connecting plate or a conductor track. One or more semiconductor bodies 20 may be electrically and mechanically connected to the semiconductor substrate 10 via a conductive connection layer 30. For example, such a conductive connection layer may be a solder layer, a conductive adhesive layer, or a sintered metal powder (e.g., sintered silver powder) layer.

[0024] Figure 1 The power semiconductor module device 100 shown also includes a terminal element 4. The terminal element 4 is electrically connected to the first metallization layer 111 and provides an electrical connection between the interior and the exterior of the housing 7. The terminal element 4 can be electrically connected to the first metallization layer 111 via a first end 41, while a second end 42 of the terminal element 4 protrudes outside the housing 7. The terminal element 4 can be electrically contacted from the outside at its second end 42. However, Figure 1The terminal element 4 shown in is only an example. The terminal element 4 can be implemented in any other way and can be arranged in any other position. For example, one or more terminal elements 4 can be arranged close to or adjacent to the side wall of the housing 7. Any other suitable embodiment is possible. For example, the terminal element 4 can be composed of or include metals such as copper, aluminum, gold, silver or any alloy thereof. The terminal element 4 can be electrically connected and mechanically connected to the semiconductor substrate 10 through a conductive connection layer (not specifically shown for the terminal element 4). Such a conductive connection layer can generally be a solder layer, a conductive adhesive layer or a sintered metal powder (for example, sintered silver powder) layer. In other power semiconductor module devices, the terminal element 4 can be alternatively or additionally arranged on the semiconductor body 20 or any other metal component of the power semiconductor module device 100, rather than being directly arranged on the substrate 10. That is, the terminal element 4 does not necessarily have to be connected to the first metallization layer 111 of the substrate 10.

[0025] Conventional power semiconductor module devices 100 typically also include a casting compound 5. For example, the casting compound 5 may be composed of or include silicone gel, or may be a rigid molding compound. The casting compound 5 may at least partially fill the interior of the housing 7, thereby covering the components and electrical connections arranged on the semiconductor substrate 10. The terminal elements 4 may be partially embedded in the casting compound 5. However, at least their second ends 42 are not covered by the casting compound 5, and protrude from the casting compound 5 through the housing 7 to the outside of the housing 7. The casting compound 5 is configured to protect the components and electrical connections inside the power semiconductor module 100 (particularly inside the housing 7) from certain environmental conditions and mechanical damage.

[0026] Different methods for connecting different elements of a power semiconductor module device 100 to each other are known. The terminal element 4 can, for example, be typically welded or sintered to the first metallization layer 111 of the substrate 10 or any other element of the power semiconductor module device 100. When using this conventional method, the terminal element 4 is first placed on the substrate 10 (or any other element of the power semiconductor module device 100). This is followed by a connection (e.g., welding or sintering) step. The tool for forming the connection usually requires a certain amount of space, which may not always be available in a power semiconductor module device 100 comprising a large number of components.

[0027] The method for connecting two connection partners 82, 84 according to an embodiment of the present disclosure includes moving the second connection partner 84 toward the first connection partner 82, and simultaneously heating (at least) the first portion of the second connection partner 84, thereby softening (at least) the first portion. The method also includes placing the second connection partner 84 on the first connection partner 82 so that its softened first portion directly contacts the first connection partner 82. That is, instead of performing two subsequent steps (arranging the second connection partner 84 on the first connection partner and then performing the connection step), the steps of moving the second connection partner 84 toward the first connection partner 82 and heating (softening) at least the first portion of the second connection partner 84 are performed simultaneously. The softened first portion of the second connection partner 84 can be placed on the first connection partner 82 by applying a certain amount of force. Therefore, the softened first portion 84 can be pressed on the first connection partner 82 and can be deformed (e.g., compressed) to a certain extent. When the first portion of the second connection partner 84 is subsequently cooled again, a permanent connection between the first connection partner 82 and the second connection partner 84 is formed. There is no need to actively cool the second connection partner 84. It is usually sufficient to stop applying heat to the first portion of the second connection partner 84.

[0028] The first portion of the second connection partner 84 can be heated to a temperature high enough to soften the material of the first portion of the second connection partner 84. Each material generally has a clear melting point. The first portion of the second connection partner 84 can be heated to a temperature high enough to soften the material but below its melting point. In this way, the material of the second connection partner 84 can be prevented from accidentally dripping onto the first connection partner 82.

[0029] It is also often possible to heat the entire second connection partner 84, rather than just the first portion. However, if only the first portion of the second connection partner 84 that is to be connected to the first connection partner 82 is heated (e.g., only the first end 41 of the termination element 4 is heated), the remainder of the second connection partner 84 can be handled without inadvertently deforming the second connection partner 84. Further, it is often easier to heat only a small portion of the connection partner rather than the entire connection partner.

[0030] The first portion of the second connection partner 84 may be heated in different ways, which will be described exemplarily below. For example, the first portion may be heated by a laser beam or an electron beam. FIG. 2A to FIG. 2C , such laser beam or electron beam can be static. In this example, the beam generating unit 90 can also be static, such as in Figure 2A and Figure 2B. The beam generating unit 90 can be, for example, a laser unit or an electron gun. That is, the beam always points in the same direction. When the second connection partner 84 moves toward the first connection partner 82, it can move through a static beam (for example, a laser beam or an electron beam). Therefore, the first part softens when it moves toward the first connection partner 82. The beam generated by the beam generating unit 90 can have a relatively large diameter. If the second connection partner 84 moves toward the first connection partner 82 at a defined speed, the larger the diameter of the second connection partner 84, the longer the second connection partner 84 will remain in the path of the beam. In order to soften the first part sufficiently to form a connection, a certain amount of time may be required. When the second connection partner 84 reaches the first connection partner 82 ( Figure 2C ), it is soft enough so that it deforms slightly when it is placed on the first connection partner 82. The beam generation unit 90 can then be turned off so that the beam generation stops and the first part is no longer heated and cools down again. In this way, a permanent connection between the two connection partners 82, 84 is formed.

[0031] However, the beam being a static beam is only an example. FIG. 3A to FIG. 3C , schematically illustrating another method according to another embodiment of the present disclosure. In this example, the beam generating unit 90 also remains static, similar to the above description of FIG. 2A to FIG. 2C However, in this example, the beam generated by the beam generating unit 90 is always focused on the first portion of the second connection partner 84. That is, the beam can move so that it follows the movement of the first portion. In a further example, a similar result can be achieved by generating a beam that can be considered to be static relative to the beam generating unit 90. However, the beam generating unit 90 can move so as to follow the movement of the first portion. This is FIG. 4A to FIG. 4C is schematically shown in FIG.

[0032] exist FIG. 2A to FIG. 2C , FIG. 3A to FIG. 3C and FIG. 4A to FIG. 4C In the example shown, only the first portion of the second connection partner 84 is heated, which is usually sufficient. However, it is also possible to additionally heat the portion of the first connection partner 82 to which the second connection partner 84 is to be connected. FIG. 5A to FIG. 5C For example, a second laser beam or electron beam may be generated that is directed toward a portion of the first connection partner 82 to be connected to the second connection partner 84. The second beam may be generated by a second beam generating unit 92, for example, as FIG. 5A to FIG. 5CHowever, it is also possible that the same beam generating unit is capable of generating two separate beams, one of which is directed toward the second connection partner 84 and the other of which is directed toward the first connection partner 82. The portion of the first connection partner 82 to be connected to the second connection partner 84 can also be heated to a temperature below its melting point. That is, it can also soften but not melt. This is Figure 5B In this way, for example, FIG. 2A to FIG. 2C , FIG. 3A to FIG. 3C and FIG. 4A to FIG. 4C However, it is not always possible for the beam to reach every different part of the first connection partner 82, for example due to limitations caused by the specific layout of the power semiconductor module arrangement 100.

[0033] Reference now FIG. 6A to FIG. 6C , schematically illustrates a method for forming a connection between two connection partners 82, 84 according to a further embodiment of the present disclosure. FIG. 6A to FIG. 6C In the method, the first connection partner 82 and the second connection partner are not heated by means of a beam (e.g., a laser beam or an electron beam). Instead, the connection between the two connection partners is formed by arc welding. The method includes moving the second connection partner 84 toward the first connection partner 82, and placing the second connection partner 84 on the first connection partner 82. The portion of the first connection partner 82 to be connected to the second connection partner 84 is coupled to a first terminal of a power supply 94, and at least a first portion of the second connection partner 84 to be connected to the first connection partner 82 is coupled to a second terminal of the power supply 94, wherein the first terminal of the power supply 94 is a positive terminal and the second terminal of the power supply 94 is a negative terminal, or vice versa. The power supply 94 is configured to provide a current greater than a threshold current or a voltage greater than a threshold voltage, so that when the distance between the first portion of the second connection partner 84 and the portion of the first connection partner 82 to be connected to the second connection partner 84 is reduced to below the threshold distance, a flashover occurs between the first portion of the second connection partner 84 and the portion of the first connection partner 82 to be connected to the second connection partner 84 (see Figure 6B ), thereby softening or melting the first portion of the second connection partner 84 and the portion of the first connection partner 82 to be connected to the second connection partner 84.

[0034] According to an example, the power supply 94 can be configured to provide a relatively high current and a relatively low voltage. Alternatively, the power supply 94 can be configured to provide a relatively high voltage and a relatively low current. When the first connection accessory 82 and the second connection accessory 84 are close to each other (the distance between the first connection accessory 82 and the second connection accessory 84 is less than the threshold distance), a flashover occurs, thereby heating (and melting or at least softening) the respective corresponding parts of the first connection accessory 82 and the second connection accessory 84. When the second connection accessory 84 is placed on the first connection accessory 82, the power supply 94 can be turned off. The materials of the first connection accessory 82 and the second connection accessory 84 are mixed with each other, and the first connection accessory 82 and the second connection accessory 84 are subsequently cooled again, thereby causing a permanent connection between the two connection accessories 82, 84. The current or voltage provided by the power supply 94 to melt the first connection accessory 82 and the second connection accessory 84 generally depends on the material and size of the first connection accessory 82 and the second connection accessory 84.

[0035] As already mentioned above, the first connection partner 82 and the second connection partner 84 can be elements of the power semiconductor module 100. For example, the first connection partner 82 can be a substrate 10 or a semiconductor body 20 (which is arranged on the substrate 10). The first connection partner 82 can also be any kind of element arranged in the power semiconductor module 100. For example, the second connection partner 84 can be a terminal element 4 or a conductor rail or a bus bar.

[0036] In many applications, multiple second connection partners 84 are arranged on the same first connection partner 82. That is, multiple connection operations are performed continuously on the first connection partner 82. Each of the multiple different second connection partners 84 can be placed on the first connection partner 82 by the same processing machine. That is, the gripping tool can, for example, pick up the second connection partner 84, move it toward the first connection partner 82 and place it on the first connection partner 82 until a connection has been formed. Then, the gripping tool can pick up the next second connection partner 84 and perform another connection process. During two different connection processes, the processing tool can, for example, move only in one spatial direction. In the example shown in this article, this is usually the vertical direction y perpendicular to the top surface of the first connection partner 82, where the top surface of the first connection partner 82 is the surface to which the second connection partner 84 will be mounted. During the two connection processes, the first connection partner 82 can be moved in a horizontal plane (x, z) so as to align the position (connection point, CP) to which the next second connection partner 84 is to be connected with the gripping tool (next second connection partner). This Fig. 7A and Figure 7B is schematically shown in FIG.

[0037] If only the first connection partner 82 is moved in the horizontal plane (x, z) to align the first connection partner 82 and the second connection partner 84, the beam generation units 90, 92 can also be kept static at least horizontally (x, z). That is, for each of the multiple connection processes, the (one or more) beams can be directed to essentially the same position (vertically above the connection point CP). In this way, only a single component (i.e., the first connection partner 82) needs to be moved horizontally between two connection processes. In this way, the cycle time can be significantly reduced.

[0038] Reference now FIG. 8A to FIG. 8C , the first portion of the second connection partner 84 and / or the portion of the first connection partner 82 to which the second connection partner 84 is to be connected can be optimized for this process. According to one example, Fig. 8A , the corresponding portion of the first connection partner 82 can have an increased thickness. For example, if the first connection partner 82 is a substrate 10, the thickness of the first metallization layer 111 can be locally increased. In this way, more material is provided at the connection point 822 for forming the connection. Instead of locally increasing the thickness of the first connection partner 82 or in addition to locally increasing the thickness of the first connection partner 82, the first portion of the second connection partner 84 can have an increased cross-sectional area. This can be achieved by providing a protrusion 842 at the first portion of the second connection partner 84, for example, as shown in FIG. Figure 8B In this way, more material is provided for forming the connection between the two connection partners 82, 84. Figure 8C , a recess 824 may also be provided in the region 822 of increased thickness of the first connection partner 82. The second connection partner 84 may be placed in this recess 824. This may improve the mixing of the materials of the first connection partner 82 and the second connection partner 84, thereby producing a very reliable connection.

[0039] The first connection partner 82 and the second connection partner 84 can generally be any kind of elements of the power semiconductor module 100, for example, to be connected to each other. As already mentioned above, the second connection partner 84 can be, for example, a conventional terminal element 4 which can be used to provide control signals to the power semiconductor module arrangement 100. The terminal element 4 is usually implemented as a simple pin, such as Fig. 9A As shown schematically in Fig. 9B As shown, for example, the second connection partner 84 may also be or include a hollow sleeve. The second connection partner 84 may also include a pin having a fork head at its second end, for example, as Fig. 9CAccording to another example, the second connection partner 84 may be a pin having a press-fit connector at its second end, such as Fig.9D Now refer to Fig.9E The second connection partner 84 may also be a termination element including any kind of mechanical compensation element. It is even possible that the second connection partner 84 is only a flexible line or includes a flexible line, such as Fig.9F Generally, the second connection partner 84 can be implemented in many different ways. 9A to 9F The embodiments schematically shown in the drawings are merely examples.

[0040] Reference now Fig.10 , exemplarily showing different ways of how the second connection partner 84 can be provided. Fig.10 , a second connection partner 84 is provided from a continuous reel 88 on the left side. The continuous reel 88 can be unfolded to a certain extent so that the free end of the continuous reel 88 moves toward the first connection partner 82 (for example, the substrate 10 of the power semiconductor module 100). The second connection partner 84 (for example, the terminal element 4) can then be cut off from the continuous reel 88 by means of a cutting device 98. The connection between the second connection partner 84 and the first connection partner 82 can be formed by means of the method described above. According to one example, the continuous reel 88 can be maintained in its position and the substrate 10 can be moved in a horizontal plane (x, z) before performing the next connection process.

[0041] As in Fig.10 According to another example, schematically shown on the right side of , a separate second connection partner 84 (e.g., a termination element 4) can be provided by means of a strip (strap) or a reservoir (depot) containing a plurality of second connection partners 84. A second connection partner 84 can be moved from the strip or the reservoir toward the first connection partner 82 and can be connected to the first connection partner 82, as described above. Then, before the next second connection partner 84 is moved toward the first connection partner 82 and another connection process is performed, the strip or the reservoir can be realigned with the first connection partner 82. In this way, a plurality of second connection partners 84 can then be connected to the same first connection partner 82 in a very efficient manner.

[0042] The method described above achieves a very reliable connection between the two connection partners 82, 84. Figures 2A to 5CThe method described, before the actual connection is formed, the second connection partner 84 and optionally the first connection partner 82 are heated very evenly. Due to the uniform heating, warping of the material generally does not occur. When the softened second connection partner 84 is pressed on the (optionally also softened) first connection partner 82, the material of the second connection partner 84 will be compressed to a certain extent. This achieves a certain expansion of the cross-sectional area of ​​the second connection partner 84 in the area where the connection is formed. Therefore, the resulting connection is very stable. The method described herein can significantly reduce the total cycle time when multiple second connection partners 84 are arranged on the first connection partner 82.

Claims

1. A method for connecting two connection partners (82, 84), comprising: Moving the second connection partner (84) toward the first connection partner (82) and simultaneously heating a first portion of the second connection partner (84) to soften the first portion; as well as The second connection partner (84) is placed on the first connection partner (82) so that the softened first portion thereof directly contacts the first connection partner (82).

2. The method according to claim 1, wherein: At least the first portion of the second connection partner (84) is composed of a first material having a well-defined melting point, and wherein heating the first portion includes heating the first portion to a temperature below its melting point.

3. The method according to claim 1 or 2, wherein: The first portion of the second connection partner (84) is heated by moving the first portion through a static laser beam or a static electron beam.

4. The method according to claim 1 or 2, wherein: The first portion of the second connection partner (84) is heated by directing a laser beam or an electron beam toward the first portion and moving the laser beam or the electron beam together with the first portion.

5. The method according to any of the preceding claims, further comprising heating the portion of the first connection partner (82) to which the second connection partner (84) is to be connected.

6. The method according to claim 5, wherein: Heating a portion of the first connection partner (82) includes heating the portion with a laser beam or an electron beam.

7. A method according to any one of the preceding claims, wherein: The first connection partner (82) is a substrate (10) for a semiconductor module (100) or a semiconductor body (20) arranged on the substrate (10); and The second connection partner (84) is a terminal element (4), a conductor track or a busbar for a semiconductor module (100).

8. A method according to any one of the preceding claims, wherein: Moving the second connection partner (84) toward the first connection partner (82) includes moving the second connection partner (84) in only one spatial direction.

9. The method according to any one of claims 3 to 8, wherein: The laser beam or electron beam is generated by means of a beam generating unit (90), and wherein the method further comprises: after placing the second connection partner (84) on the first connection partner (82), turning off the beam generating unit (90) and stopping the generation of the laser beam or electron beam.

10. A method for connecting two connection partners (82, 84), comprising: Moving the second connecting member (84) toward the first connecting member (82); as well as The second connection partner (84) is placed on the first connection partner (82), wherein: The portion of the first connection partner (82) to which the second connection partner (84) is to be connected is coupled to a first terminal of a power source (94), At least a first portion of the second connection partner (84) to be connected to the first connection partner (82) is coupled to a second terminal of the power source (94), The first terminal of the power source (94) is a positive terminal and the second terminal of the power source (94) is a negative terminal, or vice versa, and The power supply (94) is configured to provide a current greater than a threshold current or a voltage greater than a threshold voltage, so that when the distance between the first part of the second connecting partner (84) and the part of the first connecting partner (82) to be connected to the second connecting partner (84) is reduced to below the threshold distance, a flashover occurs between the first part of the second connecting partner (84) and the part of the first connecting partner (82) to be connected to the second connecting partner (84), thereby softening or melting the first part of the second connecting partner (84) and the part of the first connecting partner (82) to be connected to the second connecting partner (84).

11. The method according to claim 10, wherein: The first connection partner (82) and the second connection partner (84) are components of a power semiconductor module (100).

12. The method according to claim 11, wherein: The first connection partner (82) is a substrate (10) for a semiconductor module (100) or a semiconductor body (20) arranged on the substrate (10); and The second connection partner (84) is a terminal element (4), a conductor track or a busbar for a semiconductor module (100).

13. The method according to any one of claims 10 to 12, further comprising: The power source (94) is turned off after the second connection partner (84) is placed on the first connection partner (82).

Images